WO2022126394A1 - Current limiting protection circuit, current limiting protection method, and device - Google Patents

Current limiting protection circuit, current limiting protection method, and device Download PDF

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Publication number
WO2022126394A1
WO2022126394A1 PCT/CN2020/136617 CN2020136617W WO2022126394A1 WO 2022126394 A1 WO2022126394 A1 WO 2022126394A1 CN 2020136617 W CN2020136617 W CN 2020136617W WO 2022126394 A1 WO2022126394 A1 WO 2022126394A1
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Prior art keywords
signal
current
limiting protection
photoelectric sensor
protection circuit
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PCT/CN2020/136617
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French (fr)
Chinese (zh)
Inventor
谭斌
江申
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深圳市速腾聚创科技有限公司
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Application filed by 深圳市速腾聚创科技有限公司 filed Critical 深圳市速腾聚创科技有限公司
Priority to PCT/CN2020/136617 priority Critical patent/WO2022126394A1/en
Priority to CN202080005292.1A priority patent/CN114946041A/en
Publication of WO2022126394A1 publication Critical patent/WO2022126394A1/en
Priority to US18/079,834 priority patent/US20230107928A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode

Definitions

  • the present application relates to the field of electronic circuits, and in particular, to a current-limiting protection circuit, a current-limiting protection method and device.
  • the single-photon array sensor is composed of multiple single-photon avalanche diodes with a gain of more than 106 times. It can detect very low-power optical signals and is suitable for use in laser ranging radar. In the process of using the single-photon array sensor for ranging, when the reflected energy is high, the single-photon array sensor frequently excites the micro-unit to work, the current changes greatly, and the single-photon array sensor is abnormally heated. , resulting in abnormal operation or even damage to the single-photon array sensor, resulting in the failure of lidar ranging.
  • the embodiments of the present application provide a current-limiting protection circuit, a current-limiting protection method and a device, which can limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from working abnormally or even being damaged due to excessive working current, and significantly improving the performance of receiving high reflection Reliability of photoelectric sensor operation in the presence of energy.
  • the technical solution is as follows:
  • the present application proposes a current-limiting protection circuit, including: a power supply, a first photoelectric sensor, a receiving output circuit, a current-limiting protection circuit, and a controller;
  • the first end of the power supply is connected to the cathode of the first photoelectric sensor, the first end of the controller is connected to the current limiting protection circuit, and the second end of the controller is connected to the receiving output circuit , the third end of the controller is connected to the second end of the power supply, the anode of the first photoelectric sensor is connected to the receiving output circuit, and the current limiting protection circuit is connected to the anode of the first photoelectric sensor connected;
  • the power supply for providing a positive bias signal for the first photoelectric sensor
  • the receiving and outputting circuit is configured to receive the first echo signal collected by the first photoelectric sensor, and send the first echo signal to the controller;
  • the controller configured to analyze and obtain a signal characteristic value after receiving the first echo signal, and output an initial voltage signal based on the signal characteristic value
  • the current limiting protection circuit is used for amplifying the initial voltage signal to obtain a negative bias signal, and loading the negative bias signal to the anode of the first photoelectric sensor to reduce the first The current value of the photoelectric sensor.
  • the present application provides a current-limiting protection method, and the current-limiting protection method is applied to the current-limiting protection circuit described in the first aspect;
  • the method includes:
  • Receive the first echo signal from the receiving output circuit analyze the first echo signal to obtain a signal characteristic value; wherein, the first echo signal is obtained by the receiving output circuit through the first photoelectric sensor of;
  • the initial voltage signal is used to instruct the current limiting protection circuit to output a negative bias signal and load it into the first photoelectric the anode of the sensor to reduce the current value of the first photosensor.
  • the present application provides a current limiting protection device, the current limiting protection device is applied to the current limiting protection method according to the second aspect, and the current limiting protection device includes:
  • an output module which outputs a driving voltage signal to the current limiting protection circuit
  • a receiving module receiving the first echo signal from the receiving output circuit, and analyzing the first echo signal to obtain a signal characteristic value; wherein, the first echo signal is passed by the receiving output circuit through the first echo signal Obtained by photoelectric sensor;
  • a comparison module outputting the initial voltage signal to the current-limiting protection circuit based on the signal characteristic value; wherein the initial voltage signal is used to instruct the current-limiting protection circuit to output a negative bias signal and load it into the current-limiting protection circuit the anode of the first photosensor to reduce the current value of the first photosensor.
  • the present application provides a computer storage medium, the computer storage medium stores a plurality of instructions, and the instructions are suitable for being loaded by a processor and performing the method steps of the third aspect.
  • the present application provides a lidar, including the current limiting protection circuit described in the first aspect.
  • the beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damaged; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, and improve the distance measurement ability of the photoelectric sensor.
  • FIG. 1 is a schematic diagram of a connection of a current limiting protection circuit provided by an embodiment of the present application
  • FIG. 2 is a schematic diagram of the connection of another current limiting protection circuit provided by an embodiment of the present application.
  • FIG. 3 is a schematic diagram of the connection of another current limiting protection circuit provided by an embodiment of the present application.
  • FIG. 4 is a schematic flowchart of a current limiting protection method provided by an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a current limiting protection device provided by an embodiment of the present application.
  • a schematic diagram of the connection of a current limiting protection circuit includes: a power supply 101, a first photoelectric sensor L1, a receiving output circuit 103, a current limiting protection circuit 104, and a controller 102; a power supply
  • the first end of 101 is connected to the cathode of the first photoelectric sensor L1
  • the first end of the controller 102 is connected to the current limiting protection circuit 104
  • the second end of the controller 102 is connected to the receiving output circuit 103
  • the third end is connected to the second end of the power supply 101
  • the anode of the first photoelectric sensor L1 is connected to the receiving output circuit 104
  • the current limiting protection circuit 103 is connected to the anode of the first photoelectric sensor L1.
  • the first photoelectric sensor L1 can be understood as a single-photon avalanche photodiode used in laser communication, which utilizes the avalanche multiplication effect of carriers to amplify the photoelectric signal to improve detection efficiency. sensitivity.
  • the models of the first photoelectric sensor L1 include, but are not limited to, C30659-900-R5BH, C30659-1550-R08BH, C30919E, and the like.
  • the SiPM is composed of a plurality of micro-units in parallel, and each micro-unit is composed of a single-photon avalanche diode (SPAD) and a quenching resistor.
  • the SPAD depletion layer of each micro-unit has an intensity At a very high electric field, if photons are irradiated from the outside world, Compton scattering will occur with the electron-hole pair in the SPAD semiconductor to generate electrons or holes.
  • the high-energy electrons and holes are then accelerated in the electric field and excited. A large number of secondary electrons and holes, that is, the avalanche effect occurs.
  • the current output by each micro-unit suddenly increases, the voltage on the quenching resistor also increases, and the electric field in the SPAD decreases instantaneously, that is, the SPAD outputs a
  • the avalanche stops after a momentary current pulse, so the SiPM array can act as a photosensor, converting the light signal into a current signal.
  • the laser signal emitted by the lidar is reflected on the target object to form a laser echo signal
  • the first photoelectric sensor L1 receives the laser echo signal
  • the bias voltage formed by the power supply 101 and the current limiting protection circuit 104 is greater than
  • the laser echo signal is converted into a first current signal
  • the first current signal is sent to the receiving output circuit 103 for processing to obtain the first echo signal.
  • the power supply 101 can be understood as a component that controls to load a positive bias signal on the cathode of the first photosensor L1 based on a preset rule.
  • the power supply 101 used in this application is a high-voltage pulse power supply, which can be understood as adding a switch circuit on the basis of a high-voltage DC power supply, so that the output pulse amplitude can be adjusted, the pulse width can be adjusted, the pulse frequency can be adjusted, and the pulse output can be adjusted.
  • the controller 102 can be implemented by using an FPGA (field programmable gate array, Fieldprogrammable gate array) or an ASIC (Application Specific Integrated Circuit, application specific integrated circuit).
  • FPGA field programmable gate array
  • ASIC Application Specific Integrated Circuit, application specific integrated circuit
  • the field programmable gate array is a program-driven logic device, just like a microprocessor, its control program is stored in the memory, and after power-on, the program is automatically loaded into the chip for execution.
  • Field programmable gate array is generally composed of two programmable modules and storage SRAM.
  • CLB is a programmable logic block, the core component of the field programmable gate array, and the basic unit for realizing logic functions. It is mainly composed of digital logic circuits such as logic function generators, flip-flops, and data selectors.
  • the switch matrix is characterized by high access efficiency, suitable for simultaneous multi-point access, easy to provide very high bandwidth, and easy performance expansion, not easily limited by CPU, bus and memory technology.
  • the controller 102 is configured to receive the first echo signal of the receiving and outputting circuit 103 to obtain the signal characteristic value after analysis, and output an initial voltage signal to the current limiting protection circuit 104 based on the signal characteristic value.
  • the signal characteristic value may be a current value or a voltage value of the first echo signal.
  • the first echo signal is analyzed to obtain a voltage value.
  • an initial voltage signal is output to the current limiting protection circuit 104 .
  • the receiving and outputting circuit 103 can be understood as receiving the first current signal of the first photoelectric sensor L1, performing noise reduction, amplification and other processing on the current signal to obtain a first echo signal, and sending the first echo signal to the controller 102 circuit.
  • the receiving output circuit 103 includes: a transimpedance amplifying circuit and a processing circuit; and a transimpedance amplifying circuit, connected to the first photosensor L1, for converting the first current signal into a first voltage signal and amplifying it processing to obtain the amplified voltage signal; the processing circuit, connected with the transimpedance amplifying circuit, is used for receiving the amplified voltage signal, and sending the first echo signal obtained after the voltage signal passes through the analog-to-digital converter to the controller 102.
  • the current value of the first current signal generated by the first photoelectric sensor L1 according to the laser echo signal is relatively small, so it needs to be converted into the first voltage signal by the transimpedance amplifier circuit, and then amplified and shaped to facilitate the processing circuit. signal processing.
  • the current limiting protection circuit 104 can be understood as being used to amplify the initial voltage signal based on a preset operation rule to obtain a negative bias signal, and load the negative bias signal to the anode of the first photoelectric sensor L1 to reduce the first photoelectric Protection circuit for the current value of sensor L1.
  • the working process of the current limiting protection circuit of the present application is as follows: the first photosensor L1 is composed of a high-sensitivity SiPM (silicon photomultiplier tube), and an avalanche effect occurs when photons are received.
  • the current output by each micro-unit suddenly increases, the current value and the number of photons are linearly positively correlated, and the photoelectric amplification capability (ie Gain, Gain) is positively correlated with the bias voltage (Bias Voltage);
  • the controller 102 moves to the limit
  • the current protection circuit 104 outputs the driving voltage signal V 1 , and the current limiting protection circuit 104 receives the driving voltage signal V 1 and amplifies it to obtain a negative bias signal V m , which is loaded on the anode of the first photoelectric sensor L1;
  • the sensor L1 outputs the current value I a of the first current signal, the receiving and outputting circuit 103 receives the first current signal and processes it to obtain a first echo signal, the voltage value is VL , and the first
  • the first photosensor L1 Since the positive bias signal Vd loaded by the power supply 101 on the first photosensor L1 does not change, the first photosensor L1 The bias voltage of L1 decreases, the photoelectric amplification capability decreases (ie the gain decreases), and the current value of the current Ia of the first photoelectric sensor L1 decreases.
  • the beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damage; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, such as the reliability of the object with high reflectivity or the object is very close, and improve the distance measurement ability of the photoelectric sensor.
  • a schematic diagram of connection of another current limiting protection circuit includes: a power supply 101 , a first photoelectric sensor L1 , a second photoelectric sensor L2 , a first capacitor C1 , and a second capacitor C2 , a processing circuit 202, a transformer 201, a current limiting protection circuit 104 and a controller 102; wherein, the transformer 201 includes a primary coil and a secondary coil.
  • the first end of the controller 102 is connected to the first end of the power supply 101, the second end of the power supply 101 is connected to the cathode of the first photoelectric sensor L1, the third end of the power supply 101 is connected to the cathode of the second photoelectric sensor L2, the first The anode of the photosensor L1 is connected to the first end of the first capacitor C1, the second end of the first capacitor C1 is grounded, the anode of the first photosensor L1 is connected to the primary coil of the transformer 201, and the anode of the second photosensor L2 is connected to the primary coil of the transformer 201.
  • the first end of the second capacitor C2 is connected to the ground, the anode of the second photoelectric sensor L2 is connected to the primary coil of the transformer 201 , and the second end of the controller 102 is connected to the current limiting protection circuit 104 , the current limiting protection circuit 104 is connected to the primary coil of the transformer 201 , the secondary coil of the transformer 201 is connected to the processing circuit 202 , and the processing circuit 202 is connected to the third end of the controller 102 .
  • the second photoelectric sensor L2 can be understood as an avalanche photodiode used in laser communication, which utilizes the avalanche multiplication effect of carriers to amplify the photoelectric signal to improve detection sensitivity.
  • the first photosensor L1 and the second photosensor L2 are further provided with a decoupling circuit, and the decoupling circuit includes a first capacitor C1 and a second capacitor C2.
  • the first end of the first capacitor C1 is connected to the anode of the first photoelectric sensor L1, the second end of the first capacitor C1 is connected to the ground (such as the casing), and the first end of the second capacitor C2 is connected to the second photoelectric sensor L2.
  • the anode is connected, the second end of the second capacitor C2 is connected to the ground (such as the casing), and the first capacitor C1 and the second capacitor C2 are used as decoupling capacitors for removing power supply noise and stabilizing the bias voltage.
  • the second photoelectric sensor L2 is provided with a shading member, which is used for shading the second photoelectric sensor L2, and may be, but not limited to, a shading plate, a shading cover, or a shading cloth. It can be understood that, in the absence of light, when the applied bias voltage is greater than the breakdown voltage, the second light sensor L2 will also output a second current signal.
  • the working principle of the second photoelectric sensor L2 in the embodiment of the present application is described below.
  • the current signal caused by the laser echo signal on the first photosensor L1 is called the photocurrent signal
  • the current signal caused by the bias voltage provided by the power supply is called the bias current signal. Therefore, the first current signal output by the first photosensor L1 may only include the bias current signal at most of the time, and at the moment when the laser echo signal reaches the first photosensor L1, the first current signal includes the photocurrent signal and bias current signal. Meanwhile, the photocurrent signal is weaker than the bias current signal, so it is difficult for the processing circuit 202 and even the controller 102 to detect the photocurrent signal.
  • the bias voltage of the second photosensor L2 is the same as that of the first photosensor L1.
  • the voltages are equal, that is, the bias current signals of the second photosensor L2 and the first photosensor L1 are the same.
  • the second current signal output by the second photosensor L2 is a bias current signal at any time. Therefore, the transformer 201 receives the first echo signal of the first photoelectric sensor L1 and the second echo signal of the second photoelectric sensor L2, performs differential processing, and removes the current value belonging to the second echo signal in the first echo signal.
  • the differential current signal is obtained.
  • the differential current signal obtained by the processing circuit 202 is only the photocurrent part. Therefore, the differential current signal obtained by the processing circuit 202 is a photocurrent signal when the laser echo signal reaches the first photosensor L1, and the differential current signal should be 0 outside the moment when the laser echo signal reaches the first photosensor L1.
  • the processing circuit 202 and even the controller 102 can sensitively detect the photocurrent signal, and detect the moment when the differential current signal obtained by the processing circuit 202 is not 0 , as the moment when the laser echo signal reaches the first photoelectric sensor L1; the sensitivity and accuracy of detecting the laser echo signal are improved, and the accuracy of ranging is improved.
  • the transformer 201 can be understood as receiving the first echo signal of the first photoelectric sensor L1 and the second echo signal on the second photoelectric sensor L2, performing differential processing to obtain a differential current signal, and using the principle of electromagnetic induction to convert the differential current signal.
  • a component that amplifies the voltage value Preferably, a balun transformer is used in the present application, that is, an unbalanced transformer with functions of balanced transmission, unbalanced transmission and impedance transformation, which is used for twisted pair wires.
  • the processing circuit 202 can be understood as a circuit that collects the differential current signal through the transformer 201 , processes the differential current signal to obtain a differential voltage signal, and transmits the differential voltage signal to the controller 101 .
  • the receiving and outputting circuit 103 there are at least two ways to realize the receiving and outputting circuit 103: one is to first perform differential processing on the first echo signal and the second echo signal on the first photoelectric sensor L1 and the second photoelectric sensor L2, Then transimpedance amplification, that is, the implementation provided by the above-mentioned embodiment of the present application; the other is to first amplify the first echo signal and the second echo signal by transimpedance, and then amplify the first echo signal and the second echo signal. Doing differential processing is the second implementation. Since the second embodiment will limit the effective dynamic range of the signal chain and increase power consumption and cost, the present invention adopts the first embodiment to realize the receiving and outputting circuit 103 .
  • a balun transformer with low insertion loss and high symmetry can be selected, that is, a balun transformer with small signal attenuation and good cancellation processing performance, so
  • the photocurrent signal range close to the output of a single photoelectric sensor can be obtained; it mainly increases the thermal noise of the matching resistor RT, which is much smaller than the current noise of the transimpedance amplification circuit itself (this noise exists in the transimpedance amplification process), and the photocurrent signal
  • the influence of the signal-to-noise ratio is basically negligible; only a very small thermal noise is added, while the photocurrent signal is basically not weakened, and the influence on the signal-to-noise ratio is small, and the photocurrent signal amplification ability of the circuit is almost not reduced.
  • the implementation of the receiving output circuit 103 may be: the first echo signal and the second echo signal output by the first photosensor L1 and the second photosensor L2 are respectively input to a transimpedance amplifier for first-stage amplification , output the amplified first echo signal and the second echo signal, and then input the amplified first echo signal and the second echo signal into the subtractor, output the differential voltage signal, and then perform the secondary enlarge.
  • the current limiting protection circuit 104 can be understood as being used to amplify the initial voltage signal based on a preset operation rule to obtain a negative bias signal, and load the negative bias signal to the anode of the first photoelectric sensor L1 to reduce the first photoelectric Protection circuit for the current value of sensor L1.
  • the working process of the current limiting protection circuit of the present application is as follows: the first photosensor L1 is composed of a high-sensitivity SiPM (silicon photomultiplier tube), and an avalanche effect occurs when photons are received.
  • the current output by each micro-unit suddenly increases, the current value and the number of photons are linearly positively correlated, and the photoelectric amplification capability (ie Gain, Gain) is positively correlated with the bias voltage (Bias Voltage);
  • the controller 101 moves to the limit
  • the current protection circuit 104 outputs the driving voltage signal V 1 , and the current limiting protection circuit 104 receives the driving voltage signal V 1 and amplifies it to obtain a negative bias signal V m , which is loaded on the first photoelectric sensor L1 and the second photoelectric sensor L2 On the anode; the first photoelectric sensor L1 outputs the first echo signal I a , the second photoelectric sensor L2 outputs the second echo signal I b under the action of the bias voltage; the processing circuit 202 receives
  • the beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damaged; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, and improve the distance measurement ability of the photoelectric sensor.
  • a schematic diagram of the connection of another current limiting protection circuit includes: a power supply 101 , a first photoelectric sensor L1 , a second photoelectric sensor L2 , a first capacitor C1 , and a second capacitor C2 , a processing circuit 202, a transformer 201, a current limiting protection circuit 104 and a controller 102; wherein, the transformer 201 includes a primary coil and a secondary coil.
  • the first end of the controller 102 is connected to the first end of the power supply 101, the second end of the power supply 101 is connected to the cathode of the first photoelectric sensor L1, the third end of the power supply 101 is connected to the cathode of the second photoelectric sensor L2, the first The anode of the photosensor L1 is connected to the first end of the first capacitor C1, the second end of the first capacitor C1 is grounded, the anode of the first photosensor L1 is connected to the primary coil of the transformer 201, and the anode of the second photosensor L2 is connected to the primary coil of the transformer 201.
  • the first end of the second capacitor C2 is connected to the ground, the anode of the second photoelectric sensor L2 is connected to the primary coil of the transformer 201 , and the second end of the controller 102 is connected to the current limiting protection circuit 104 , the current limiting protection circuit 104 is connected to the primary coil of the transformer 201 , the secondary coil of the transformer 201 is connected to the processing circuit 202 , and the processing circuit 202 is connected to the third end of the controller 102 .
  • the current limiting protection circuit 104 includes: a digital-to-analog converter 1041, a high-voltage amplifier U1, a first resistor R1 and a third capacitor C3.
  • the inverting input terminal of the high voltage amplifier U1 is connected to the primary coil of the transformer 103, the output terminal of the high voltage amplifier U1 is connected to the first terminal of the first resistor R1, and the first terminal of the first resistor R1 is connected to the first terminal of the third capacitor C3.
  • the second end of the first resistor R1 is connected to the second end of the third capacitor C3, the input end of the digital-to-analog converter 1041 is connected to the second end of the controller 102, and the output end of the digital-to-analog converter 1041 is connected to the high voltage
  • the non-inverting input of amplifier U1 is connected.
  • the receiving output circuit 103 includes: a transformer 201 , a transimpedance amplifier 301 , an amplification conditioning circuit 302 and an analog-to-digital converter 303 .
  • the transimpedance amplifier 301 is connected to the secondary coil of the transformer 201, the amplifying and conditioning circuit 302 is connected to the transimpedance amplifier 301, the digital-to-analog converter 303 is connected to the amplifying and conditioning circuit 302, and the second end of the controller 102 is connected to the digital-to-analog converter 303.
  • the digital-to-analog converter 1041 (DAC, D/A converter) can be understood as a device that converts discrete digital signals into continuous analog signals, mainly composed of digital registers, analog electronic switches, bit weight networks, summing operational amplifiers and The reference voltage source (or constant current source) is composed.
  • the models of the digital-to-analog converter 1041 include, but are not limited to, models such as DAC7311IDCKR, DAC7311IDCKR, and the like.
  • the digital-to-analog converter 1041 is configured to perform digital-to-analog conversion after receiving the initial voltage signal of the controller 102 to obtain the converted voltage signal, and output the converted voltage signal to the high-voltage amplifier U1.
  • the current-limiting protection circuit 104 does not include the digital-to-analog converter 1041, and the second terminal of the controller 102 is connected to the non-inverting input terminal of the high-voltage amplifier U1.
  • the initial voltage signal output by the second end of the controller 102 is a modulo electrical signal, which can be directly received by the high-voltage amplifier U1.
  • the high-voltage amplifier U1 can be understood as a signal amplifier with high-voltage amplitude output, which is used for receiving the converted voltage signal from the digital-to-analog converter 1041 and performing amplification processing based on a preset operation rule to obtain a negative bias signal, which passes through the first resistor. After R1 is limited, it is loaded on the anode of the first photoelectric sensor L1. For example, the voltage value of the converted voltage signal loaded on the non-inverting input terminal of the high voltage amplifier U1 is 5V, and the negative bias voltage signal of 200V is output and loaded on the anode of the first photosensor L1.
  • a third capacitor C3 is connected in parallel with both ends of the first resistor R1. It should be noted that when a photon is incident, the incident photon can be effectively absorbed by a large number of single-photon avalanche diodes and excite the avalanche effect, so that a large number of single-photon avalanche diodes can be turned on and output pulse current;
  • the capacitor C cell (due to the structure of the silicon photomultiplier tube, each single-photon avalanche diode is connected with an equivalent capacitor in parallel) is charged, so that the equivalent capacitor of the avalanche diode is charged, thereby returning to the normal bias state, waiting for Before the charging of the effective capacitor is completed, it is difficult for the silicon photomultiplier tube to effectively detect the incident light and output the current; in the embodiment of the present application, the equivalent capacitance refers to the first capacitor C1 and the second capacitor C2, wherein the equivalent capacitance C cell and the quenching The resistance R q determines
  • the first resistor R1 and the first capacitor C1 or the second capacitor C2 form an RC circuit.
  • the bias voltage is greater than the breakdown voltage and the avalanche effect occurs in the first photosensor L1 , the RC circuit will slow down the voltage change of the anode terminal of the first photoelectric sensor L1, and slow down the recovery time of the first photoelectric sensor L1.
  • the beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: connecting a third capacitor C3 in parallel with both ends of the first resistor R1, which can store energy when the current value output by the first photoelectric sensor L1 changes rapidly, and can The charge required for the rapid change of the voltage at the anode terminal of the first photosensor L1 is provided to speed up the recovery time of the first photosensor L1.
  • the trans-impedance amplifier 301 can be understood as converting the input voltage signal into a current signal that satisfies a certain relationship.
  • the converted current is equivalent to a constant current source with adjustable output, and its output current should be able to maintain Stable without changing with load changes.
  • the transimpedance amplifier 301 converts the differential current signal collected by the transformer 201 into a differential voltage signal to be processed through the current and voltage, and outputs the signal to the amplification and conditioning circuit 302 .
  • the amplification conditioning circuit 302 can be understood as amplifying, buffering or scaling the analog signal from the sensor, making it suitable for the input of an analog-to-digital converter (ADC) and obtaining a digital signal, thereby outputting to the controller, so that the controller can complete the Data acquisition, control processes, perform calculations, display readouts, and other purposes.
  • the amplification and conditioning circuit 302 is configured to amplify and condition the differential voltage signal to be processed to obtain a differential voltage signal, and output the differential voltage signal to the analog-to-digital converter 303 .
  • the analog-to-digital converter 303 (Analog to Digital Converter, A/D converter) can be understood as an electronic component that converts an analog signal into a digital signal, for example, the model of the analog-to-digital converter 303 includes but is not limited to ADS822E, ADS8472IBRGZT and other models.
  • the analog-to-digital converter 303 is configured to perform analog-to-digital conversion on the differential voltage signal from the amplification and conditioning circuit 302 to obtain a digital voltage signal, and transmit the digital voltage signal to the controller 102 .
  • the receiving and outputting circuit 103 does not include the analog-to-digital converter 303 , and the third end of the controller 102 is connected to the amplifying and conditioning circuit 302 .
  • the third terminal of the controller 102 can receive the analog signal.
  • the beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damaged; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, and improve the distance measurement ability of the photoelectric sensor.
  • a schematic flowchart of a current limiting protection method provided in an embodiment of the present application is executed by a controller, and the controller may adopt an FPGA (Field-programmable gate array, Field-programmable gate array) or an ASIC (Application Specific Integrated Circuit, application-specific integrated circuit) implementation.
  • the field programmable gate array is a program-driven logic device, just like a microprocessor, its control program is stored in the memory, and after power-on, the program is automatically loaded into the chip for execution.
  • Field programmable gate array is generally composed of two programmable modules and storage SRAM.
  • CLB is a programmable logic block, the core component of the field programmable gate array, and the basic unit for realizing logic functions.
  • the switch matrix is characterized by high access efficiency, suitable for simultaneous multi-point access, easy to provide very high bandwidth, and easy performance expansion, not easily limited by CPU, bus and memory technology.
  • the current limiting protection method proposed in this application includes the following steps:
  • the controller outputs a driving voltage signal to the current-limiting protection circuit, and the current-limiting protection circuit amplifies the initial voltage signal based on a preset operation rule, obtains a negative bias signal, and loads the negative bias signal to the first photoelectric sensor and the second photoelectric
  • the power supply provides a positive bias signal at the cathode of the first photosensor and the second photosensor, so that the bias voltage on the first photosensor and the second photosensor is greater than the breakdown voltage, the first photosensor and the second photosensor.
  • the photoelectric sensor is working normally.
  • the controller outputs a driving voltage signal V1 to the current-limiting protection circuit 104, and the current-limiting protection circuit 104 receives the driving voltage signal V1 and amplifies it to obtain a negative bias signal Vm , which is loaded on the first photoelectric sensor and the second photoelectric On the anode of the sensor; the power supply outputs a positive bias signal V d and is loaded on the cathodes of the first and second photosensors; where V m ⁇ V d , so on the first and second photosensors A negative bias voltage is formed, and the bias voltage is greater than the breakdown voltage of the first photosensor; when the first photosensor receives photons, a current value is output.
  • S402. Receive the first echo signal from the receiving output circuit, and analyze the first echo signal to obtain the signal characteristic value.
  • the receiving and outputting circuit can be understood as a circuit that collects the differential current signal on the first photoelectric sensor and the second photoelectric sensor, processes the differential current signal to obtain a differential voltage signal, and transmits the differential voltage signal to the controller.
  • the implementation of the voltage compensation circuit may be: the first echo signal and the second echo signal output by the first photoelectric sensor and the second photoelectric sensor are respectively input to both ends of the balanced side of the balun transformer, and the differential processing is performed.
  • the obtained differential current signal is coupled to the primary side through a transformer, and then the differential current signal is input to a transimpedance amplifier for transimpedance amplification to obtain a differential voltage signal.
  • the first photoelectric sensor outputs the first echo signal I a
  • the second photoelectric sensor outputs the second echo signal I b under the action of the bias voltage
  • the controller receives the differential voltage signal V c and performs After analysis, a voltage value of 50V is obtained as the signal characteristic value of the differential voltage Vc .
  • the controller receives the differential voltage signal V c and compares it with the voltage threshold V 0 , and the differential voltage signal V c > the voltage threshold V 0 , the controller outputs the initial voltage signal V 2 to the current limiting protection circuit, wherein the initial voltage signal V 2 > driving voltage signal V 1 ; the current-limiting protection circuit receives the initial voltage signal V 2 and amplifies it to obtain a negative bias signal V n , which is loaded on the anodes of the first photoelectric sensor and the second photoelectric sensor.
  • the negative bias signal V d loaded by the power supply on the first photoelectric sensor does not change, the bias voltage of the first photoelectric sensor is reduced, the photoelectric amplification capability is reduced (that is, the gain is reduced), and the first echo signal of the first photoelectric sensor is reduced.
  • the current value of I a becomes smaller.
  • the controller outputs an initial voltage signal to the current-limiting protection circuit, including: obtaining a voltage value based on the differential voltage signal, the voltage value being used as a signal characteristic value; calculating an offset between the voltage value and a voltage threshold; based on the offset
  • the voltage value of the initial voltage signal is obtained through the quantity and PID calculation model; the initial voltage signal is output to the current limiting protection circuit.
  • the PID calculation model is a calculation model that calculates the input value based on the PID control theory to obtain the output value.
  • PID control theory can be understood as a linear control theory in which a control deviation is formed according to a given value and an actual output value, and the deviation is formed by a linear combination of proportional, integral and differential to form a control quantity, and the controlled object is controlled.
  • Kp is the proportional coefficient
  • Ki is the integral constant
  • Kd is the differential constant
  • the basic formula of the PID calculation model is formed, and the initial voltage signal V 2 is obtained as 60V.
  • the main parameters in the PID calculation model are determined by the following methods: a tuning method based on the parameter identification of the controlled process object. This method first identifies the parameter model of the object, and then uses the pole configuration tuning method, the cancellation principle method and other theoretical calculations. Tuning method tuning; parameter tuning method based on the output response characteristic of the extracted object, such as ZN parameter tuning method (also called critical proportionality method); parameter optimization method; pattern recognition-based expert system method and controller parameters based on the control behavior of the controller itself Online tuning method, etc.
  • ZN parameter tuning method also called critical proportionality method
  • parameter optimization method pattern recognition-based expert system method and controller parameters based on the control behavior of the controller itself Online tuning method, etc.
  • the beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damaged; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, and improve the distance measurement ability of the photoelectric sensor.
  • FIG. 5 it is a schematic structural diagram of a current limiting protection device according to an embodiment of the present application.
  • the current limiting protection device can be implemented as a whole or a part of the device through software, hardware or a combination of the two.
  • the current limiting protection device includes an output module 501 , a receiving module 502 and a comparison module 503 .
  • the output module 501 outputs a driving voltage signal to the current limiting protection circuit
  • the receiving module 502 receives a first echo signal from the receiving output circuit, and analyzes the first echo signal to obtain a signal characteristic value; wherein, the first echo signal is passed by the receiving output circuit through the first echo signal. Acquired by a photoelectric sensor;
  • the comparison module 503 based on the signal characteristic value, outputs the initial voltage signal to the current limiting protection circuit; wherein, the initial voltage signal is used to instruct the current limiting protection circuit to output a negative bias signal and load it into the current limiting protection circuit the anode of the first photoelectric sensor to reduce the current value of the first photoelectric sensor.
  • An embodiment of the present application further provides a computer storage medium, where the computer storage medium can store multiple instructions, and the instructions are suitable for being loaded by a processor and executing the current limiting protection method shown in FIG. 4 above, For the specific execution process, reference may be made to the specific description of the embodiment shown in FIG. 4 , which will not be repeated here.
  • the present application also provides a computer program product, the computer program product stores at least one instruction, and the at least one instruction is loaded by the processor to execute the current limiting protection method shown in FIG.
  • the process reference may be made to the specific description of the embodiment shown in FIG. 4 , which will not be repeated here.
  • the processes in the methods of the above embodiments can be implemented by instructing relevant hardware through a computer program, and the program can be stored in a computer-readable storage medium. During execution, the processes of the embodiments of the above-mentioned methods may be included.
  • the storage medium can be a magnetic disk, an optical disk, a read-only storage memory, or a random storage memory, and the like.

Abstract

Disclosed in embodiments of the present application are a current limiting protection circuit, a current limiting protection method, and a device. The current limiting protection circuit comprises a power source, a first photoelectric sensor, a receiving and outputting circuit, a current limiting protection circuit, and a controller, wherein the current limiting protection circuit is used for receiving an initial voltage signal and amplifying same to obtain a negative bias signal, and loading the negative bias signal to an anode of the first photoelectric sensor to decrease the current value of the first photoelectric sensor. By using the embodiments of the present application, the working current of the photoelectric sensor can be limited, thereby preventing the photoelectric sensor from working abnormally or even being damaged due to excessive current, and remarkably improving the reliability of working of the photoelectric sensor in the case of receiving highly reflective energy.

Description

一种限流保护电路、限流保护方法和装置A current limiting protection circuit, current limiting protection method and device 技术领域technical field
本申请涉及电子电路领域,尤其涉及一种限流保护电路、限流保护方法和装置。The present application relates to the field of electronic circuits, and in particular, to a current-limiting protection circuit, a current-limiting protection method and device.
背景技术Background technique
单光子列阵传感器是多个单光子雪崩二极管组成的,具备高达106倍以上的增益,可以探测非常低功率的光信号,适合应用于激光测距雷达中。在使用单光子列阵传感器进行测距的过程中,当遇到反射能量较高的情况时,单光子列阵传感器频繁激发微单元工作,电流变化幅度较大,单光子列阵传感器内部发热异常,从而导致工作异常甚至损坏单光子列阵传感器,造成激光雷达测距失败。The single-photon array sensor is composed of multiple single-photon avalanche diodes with a gain of more than 106 times. It can detect very low-power optical signals and is suitable for use in laser ranging radar. In the process of using the single-photon array sensor for ranging, when the reflected energy is high, the single-photon array sensor frequently excites the micro-unit to work, the current changes greatly, and the single-photon array sensor is abnormally heated. , resulting in abnormal operation or even damage to the single-photon array sensor, resulting in the failure of lidar ranging.
有鉴于此,急需提出一种含有单光子列阵传感器的工作电路,解决上述光单子列阵传感器工作时出现的问题。实现在接收高反射能量的情况下激光测距雷达进行测距的可能。In view of this, there is an urgent need to propose a working circuit containing a single-photon array sensor to solve the problems that occur when the above-mentioned optical single-photon array sensor works. Realize the possibility of laser ranging radar ranging under the condition of receiving high reflected energy.
发明内容SUMMARY OF THE INVENTION
本申请实施例提供了一种限流保护电路、限流保护方法和装置,可以对光电传感器的工作电流进行限制,从而防止工作电流过大导致光电传感器工作异常甚至损坏,显著提高在接收高反射能量的情况下光电传感器工作的可靠性。所述技术方案如下:The embodiments of the present application provide a current-limiting protection circuit, a current-limiting protection method and a device, which can limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from working abnormally or even being damaged due to excessive working current, and significantly improving the performance of receiving high reflection Reliability of photoelectric sensor operation in the presence of energy. The technical solution is as follows:
第一方面,本申请提出一种限流保护电路,包括:电源、第一光电传感器、接收输出电路、限流保护电路和控制器;In a first aspect, the present application proposes a current-limiting protection circuit, including: a power supply, a first photoelectric sensor, a receiving output circuit, a current-limiting protection circuit, and a controller;
所述电源的第一端与所述第一光电传感器的阴极相连,所述控制器的第一端与所述限流保护电路相连,所述控制器的第二端与所述接收输出电路相连,所述控制器的第三端与所述电源的第二端相连,所述第一光电传感器的阳极与所述接收输出电路相连,所述限流保护电路与所述第一光电传感器的阳极相连;The first end of the power supply is connected to the cathode of the first photoelectric sensor, the first end of the controller is connected to the current limiting protection circuit, and the second end of the controller is connected to the receiving output circuit , the third end of the controller is connected to the second end of the power supply, the anode of the first photoelectric sensor is connected to the receiving output circuit, and the current limiting protection circuit is connected to the anode of the first photoelectric sensor connected;
所述电源,用于为所述第一光电传感器提供正偏压信号;the power supply for providing a positive bias signal for the first photoelectric sensor;
所述接收输出电路,用于接收所述第一光电传感器采集的第一回波信号,以及将所述第一回波信号发送给所述控制器;The receiving and outputting circuit is configured to receive the first echo signal collected by the first photoelectric sensor, and send the first echo signal to the controller;
所述控制器,用于接收所述第一回波信号后解析得到信号特征值,以及基于所述信号特征值输出初始电压信号;the controller, configured to analyze and obtain a signal characteristic value after receiving the first echo signal, and output an initial voltage signal based on the signal characteristic value;
所述限流保护电路,用于接收所述初始电压信号后进行放大处理得到负偏压信号,以及将所述负偏压信号加载到所述第一光电传感器的阳极,以降低所述第一光电传感器的电流值。The current limiting protection circuit is used for amplifying the initial voltage signal to obtain a negative bias signal, and loading the negative bias signal to the anode of the first photoelectric sensor to reduce the first The current value of the photoelectric sensor.
第二方面,本申请提出一种限流保护方法,所述限流保护方法应用于第一方面所述的限流保护电路;In a second aspect, the present application provides a current-limiting protection method, and the current-limiting protection method is applied to the current-limiting protection circuit described in the first aspect;
其中,所述方法包括:Wherein, the method includes:
向所述限流保护电路输出驱动电压信号;outputting a driving voltage signal to the current limiting protection circuit;
接收来自所述接收输出电路的第一回波信号,解析所述第一回波信号得到信号特征值;其中,所述第一回波信号由所述接收输出电路通过所述第一光电传感器获取的;Receive the first echo signal from the receiving output circuit, analyze the first echo signal to obtain a signal characteristic value; wherein, the first echo signal is obtained by the receiving output circuit through the first photoelectric sensor of;
基于所述信号特征值,向所述限流保护电路输出所述初始电压信号;其中,所述初始电压信号用于指示所述限流保护电路输出负偏压信号并加载到所述第一光电传感器的阳极,以降低所述第一光电传感器的电流值。Based on the signal characteristic value, output the initial voltage signal to the current limiting protection circuit; wherein, the initial voltage signal is used to instruct the current limiting protection circuit to output a negative bias signal and load it into the first photoelectric the anode of the sensor to reduce the current value of the first photosensor.
第三方面,本申请提出一种限流保护装置,所述限流保护装置应用于如第二方面所述的限流保护方法,所述限流保护装置包括:In a third aspect, the present application provides a current limiting protection device, the current limiting protection device is applied to the current limiting protection method according to the second aspect, and the current limiting protection device includes:
输出模块,向所述限流保护电路输出驱动电压信号;an output module, which outputs a driving voltage signal to the current limiting protection circuit;
接收模块,接收来自所述接收输出电路的第一回波信号,解析所述第一回波信号得到信号特征值;其中,所述第一回波信号由所述接收输出电路通过所述第一光电传感器获取的;a receiving module, receiving the first echo signal from the receiving output circuit, and analyzing the first echo signal to obtain a signal characteristic value; wherein, the first echo signal is passed by the receiving output circuit through the first echo signal Obtained by photoelectric sensor;
比较模块,基于所述信号特征值,向所述限流保护电路输出所述初始电压信号;其中,所述初始电压信号用于指示所述限流保护电路输出负偏压信号并加载到所述第一光电传感器的阳极,以降低所述第一光电传感器的电流值。a comparison module, outputting the initial voltage signal to the current-limiting protection circuit based on the signal characteristic value; wherein the initial voltage signal is used to instruct the current-limiting protection circuit to output a negative bias signal and load it into the current-limiting protection circuit the anode of the first photosensor to reduce the current value of the first photosensor.
第四方面,本申请提出一种计算机存储介质,所述计算机存储介质存储有多条指令,所述指令适于由处理器加载并执行如第三方面所述的方法步骤。In a fourth aspect, the present application provides a computer storage medium, the computer storage medium stores a plurality of instructions, and the instructions are suitable for being loaded by a processor and performing the method steps of the third aspect.
第五方面,本申请提出一种激光雷达,包括如第一方面所述的限流保护电 路。In a fifth aspect, the present application provides a lidar, including the current limiting protection circuit described in the first aspect.
本申请一些实施例提供的技术方案带来的有益效果至少包括:利用限流保护电路可以对光电传感器的工作电流进行限制,从而防止工作电流过大导致光电传感器内部发热,从而导致光电传感器工作异常甚至损坏;显著提高在接收高反射能量的情况下光电传感器工作的可靠性,提高光电传感器的测距能力。The beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damaged; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, and improve the distance measurement ability of the photoelectric sensor.
附图说明Description of drawings
为了更清楚地说明本申请实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the accompanying drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only These are some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without any creative effort.
图1是本申请实施例提供的一种限流保护电路的连接示意图;1 is a schematic diagram of a connection of a current limiting protection circuit provided by an embodiment of the present application;
图2是本申请实施例提供的另一种限流保护电路的连接示意图;2 is a schematic diagram of the connection of another current limiting protection circuit provided by an embodiment of the present application;
图3是本申请实施例提供的另一种限流保护电路的连接示意图;3 is a schematic diagram of the connection of another current limiting protection circuit provided by an embodiment of the present application;
图4是本申请实施例提供的一种限流保护方法的流程示意图;4 is a schematic flowchart of a current limiting protection method provided by an embodiment of the present application;
图5是本申请实施例提供的一种限流保护装置的结构示意图。FIG. 5 is a schematic structural diagram of a current limiting protection device provided by an embodiment of the present application.
具体实施方式Detailed ways
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present application.
在本申请的描述中,需要理解的是,术语“第一”、“第二”等仅用于描述目的,而不能理解为指示或暗示相对重要性。在本申请的描述中,需要说明的是,除非另有明确的规定和限定,“包括”和“具有”以及它们任何变形,意图在于覆盖不排他的包含。例如包含了一系列步骤或单元的过程、方法、系统、产品或设备没有限定于已列出的步骤或单元,而是可选地还包括没有列出 的步骤或单元,或可选地还包括对于这些过程、方法、产品或设备固有的其他步骤或单元。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本申请中的具体含义。此外,在本申请的描述中,除非另有说明,“多个”是In the description of the present application, it should be understood that the terms "first", "second" and the like are used for descriptive purposes only, and should not be construed as indicating or implying relative importance. In the description of the present application, it should be noted that, unless otherwise expressly specified and defined, "including" and "having" and any modifications thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes unlisted steps or units, or optionally also includes For other steps or units inherent to these processes, methods, products or devices. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood in specific situations. In addition, in the description of this application, unless otherwise specified, "a plurality" is
指两个或两个以上。“和/或”,描述关联对象的关联关系,表示可以存在三种关系,例如,A和/或B,可以表示:单独存在A,同时存在A和B,单独存在B这三种情况。字符“/”一般表示前后关联对象是一种“或”的关系。means two or more. "And/or", which describes the association relationship of the associated objects, means that there can be three kinds of relationships, for example, A and/or B, which can mean that A exists alone, A and B exist at the same time, and B exists alone. The character "/" generally indicates that the associated objects are an "or" relationship.
下面结合具体的实施例对本申请进行详细说明。The present application will be described in detail below with reference to specific embodiments.
如图1所示,为本申请实施例提供的一种限流保护电路的连接示意图,包括:电源101、第一光电传感器L1、接收输出电路103、限流保护电路104和控制器102;电源101的第一端与第一光电传感器L1的阴极相连,所述控制器102的第一端与限流保护电路104相连,控制器102的第二端与接收输出电路103相连,控制器102的第三端与电源101的第二端相连,第一光电传感器L1的阳极与接收输出电路104相连,限流保护电路103与第一光电传感器L1的阳极相连。As shown in FIG. 1, a schematic diagram of the connection of a current limiting protection circuit provided by an embodiment of the present application includes: a power supply 101, a first photoelectric sensor L1, a receiving output circuit 103, a current limiting protection circuit 104, and a controller 102; a power supply The first end of 101 is connected to the cathode of the first photoelectric sensor L1, the first end of the controller 102 is connected to the current limiting protection circuit 104, the second end of the controller 102 is connected to the receiving output circuit 103, and the The third end is connected to the second end of the power supply 101, the anode of the first photoelectric sensor L1 is connected to the receiving output circuit 104, and the current limiting protection circuit 103 is connected to the anode of the first photoelectric sensor L1.
第一光电传感器L1,在本申请中尤其指单光子列阵传感器,可以理解为在激光通信中使用的单光子雪崩光电二极管,利用了载流子的雪崩倍增效应来放大光电信号以提高检测的灵敏度。例如,第一光电传感器L1的型号包括但不限于C30659-900-R5BH、C30659-1550-R08BH、C30919E等。以高灵敏度的SiPM(硅光电倍增管)为第一光电传感器L1的一个示例,SiPM由多个微单元并联组成,每个微单元由单光子雪崩二极管(SPAD)和淬灭电阻组成。当在硅光电倍增管施加反向偏置电压(正偏压信号和负偏压信号共同作用下产生的反向偏置电压,几十伏)时,每个微单元的SPAD耗尽层有强度很高的电场,此时若外界有光子照射进来,会和SPAD半导体中的电子空穴对发生康普顿散射,生成出电子或空穴,高能的电子和空穴随即在电场中加速,激发大量的次级电子和空穴,即发生雪崩效应,此时每个微单元输出的电流突然变大,在淬灭电 阻上的电压也变大,SPAD中的电场瞬间变小,即SPAD输出一个瞬时电流脉冲后雪崩停止,因此SiPM阵列可以作为光电传感器,将光信号转换为电流信号。The first photoelectric sensor L1, especially referred to as a single-photon array sensor in this application, can be understood as a single-photon avalanche photodiode used in laser communication, which utilizes the avalanche multiplication effect of carriers to amplify the photoelectric signal to improve detection efficiency. sensitivity. For example, the models of the first photoelectric sensor L1 include, but are not limited to, C30659-900-R5BH, C30659-1550-R08BH, C30919E, and the like. Taking a high-sensitivity SiPM (silicon photomultiplier tube) as an example of the first photosensor L1, the SiPM is composed of a plurality of micro-units in parallel, and each micro-unit is composed of a single-photon avalanche diode (SPAD) and a quenching resistor. When a reverse bias voltage is applied to the silicon photomultiplier tube (the reverse bias voltage generated under the combined action of the positive bias signal and the negative bias signal, several tens of volts), the SPAD depletion layer of each micro-unit has an intensity At a very high electric field, if photons are irradiated from the outside world, Compton scattering will occur with the electron-hole pair in the SPAD semiconductor to generate electrons or holes. The high-energy electrons and holes are then accelerated in the electric field and excited. A large number of secondary electrons and holes, that is, the avalanche effect occurs. At this time, the current output by each micro-unit suddenly increases, the voltage on the quenching resistor also increases, and the electric field in the SPAD decreases instantaneously, that is, the SPAD outputs a The avalanche stops after a momentary current pulse, so the SiPM array can act as a photosensor, converting the light signal into a current signal.
换而言之,激光雷达发射的激光信号,在目标物体上反射形成激光回波信号,第一光电传感器L1接收该激光回波信号,在电源101和限流保护电路104形成的偏置电压大于击穿电压时,将激光回波信号转换为第一电流信号,以及将第一电流信号发送给接收输出电路103进行处理得到第一回波信号。In other words, the laser signal emitted by the lidar is reflected on the target object to form a laser echo signal, the first photoelectric sensor L1 receives the laser echo signal, and the bias voltage formed by the power supply 101 and the current limiting protection circuit 104 is greater than When the breakdown voltage is reached, the laser echo signal is converted into a first current signal, and the first current signal is sent to the receiving output circuit 103 for processing to obtain the first echo signal.
电源101,可以理解为基于预设规则控制向第一光电传感器L1的阴极加载正偏压信号的元器件。优选的,本申请中使用的电源101为高压脉冲电源,可以理解为是在高压直流电源的基础上增加了开关电路,从而输出脉冲幅度可调、脉冲宽度可调、脉冲频率可调、脉冲输出个数可设定的一种高压电源。The power supply 101 can be understood as a component that controls to load a positive bias signal on the cathode of the first photosensor L1 based on a preset rule. Preferably, the power supply 101 used in this application is a high-voltage pulse power supply, which can be understood as adding a switch circuit on the basis of a high-voltage DC power supply, so that the output pulse amplitude can be adjusted, the pulse width can be adjusted, the pulse frequency can be adjusted, and the pulse output can be adjusted. A high-voltage power supply with a settable number.
控制器102,可以采用FPGA(现场可编程门阵列,Fieldprogrammable gate array)或者ASIC(Application Specific Integrated Circuit,专用集成电路)实现。其中,现场可编程门阵列是一种程序驱动逻辑器件,就像一个微处理器,其控制程序存储在内存中,加电后,程序自动装载到芯片执行。现场可编程门阵列一般由2个可编程模块和存储SRAM构成。CLB是可编程逻辑块,是现场可编程门阵列的核心组成部分,是实现逻辑功能的基本单元,主要由逻辑函数发生器、触发器、数据选择器等数字逻辑电路构成。其中,ASIC芯片技术所有接口模块(包括控制模块)都连接到一个矩阵式背板上,通过ASIC芯片到ASIC芯片的直接转发,可同时进行多个模块之间的通信;每个模块的缓存只处理本模块上的输入输出队列,因此对内存芯片性能的要求大大低于共享内存方式。总之,交换矩阵的特点是访问效率高,适合同时进行多点访问,容易提供非常高的带宽,并且性能扩展方便,不易受CPU、总线以及内存技术的限制。The controller 102 can be implemented by using an FPGA (field programmable gate array, Fieldprogrammable gate array) or an ASIC (Application Specific Integrated Circuit, application specific integrated circuit). Among them, the field programmable gate array is a program-driven logic device, just like a microprocessor, its control program is stored in the memory, and after power-on, the program is automatically loaded into the chip for execution. Field programmable gate array is generally composed of two programmable modules and storage SRAM. CLB is a programmable logic block, the core component of the field programmable gate array, and the basic unit for realizing logic functions. It is mainly composed of digital logic circuits such as logic function generators, flip-flops, and data selectors. Among them, all interface modules (including control modules) of ASIC chip technology are connected to a matrix backplane, and communication between multiple modules can be carried out at the same time through direct forwarding from ASIC chip to ASIC chip; the cache of each module is only It handles the input and output queues on this module, so the performance requirements of the memory chip are much lower than those of the shared memory method. In short, the switch matrix is characterized by high access efficiency, suitable for simultaneous multi-point access, easy to provide very high bandwidth, and easy performance expansion, not easily limited by CPU, bus and memory technology.
在本申请实施例中,控制器102用于接收接收输出电路103的第一回波信号后解析得到信号特征值,以及基于信号特征值向限流保护电路104输出初始电压信号。信号特征值,可以是第一回波信号的电流值或电压值,例如,解析第一回波信号得到电压值,当电压值大于电压阈值时,向限流保护电路104 输出初始电压信号。In the embodiment of the present application, the controller 102 is configured to receive the first echo signal of the receiving and outputting circuit 103 to obtain the signal characteristic value after analysis, and output an initial voltage signal to the current limiting protection circuit 104 based on the signal characteristic value. The signal characteristic value may be a current value or a voltage value of the first echo signal. For example, the first echo signal is analyzed to obtain a voltage value. When the voltage value is greater than the voltage threshold, an initial voltage signal is output to the current limiting protection circuit 104 .
接收输出电路103,可以理解为接收第一光电传感器L1的第一电流信号,并对电流信号进行降噪、放大等处理后得到第一回波信号,将第一回波信号发送给控制器102的电路。The receiving and outputting circuit 103 can be understood as receiving the first current signal of the first photoelectric sensor L1, performing noise reduction, amplification and other processing on the current signal to obtain a first echo signal, and sending the first echo signal to the controller 102 circuit.
在一个实施例中,接收输出电路103包括:跨阻放大电路和处理电路;跨阻放大电路,与第一光电传感器L1连接,用于将第一电流信号转换为第一电压信号,并进行放大处理,得到放大后的电压信号;处理电路,与跨阻放大电路连接,用于接收放大处理后的电压信号,以及将电压信号经过模数转换器后得到的第一回波信号发送给控制器102。可以理解的是,第一光电传感器L1根据激光回波信号生成的第一电流信号的电流值较小,因此需要经跨阻放大电路转换为第一电压信号,并进行放大整形,便于处理电路进行信号处理。In one embodiment, the receiving output circuit 103 includes: a transimpedance amplifying circuit and a processing circuit; and a transimpedance amplifying circuit, connected to the first photosensor L1, for converting the first current signal into a first voltage signal and amplifying it processing to obtain the amplified voltage signal; the processing circuit, connected with the transimpedance amplifying circuit, is used for receiving the amplified voltage signal, and sending the first echo signal obtained after the voltage signal passes through the analog-to-digital converter to the controller 102. It can be understood that the current value of the first current signal generated by the first photoelectric sensor L1 according to the laser echo signal is relatively small, so it needs to be converted into the first voltage signal by the transimpedance amplifier circuit, and then amplified and shaped to facilitate the processing circuit. signal processing.
限流保护电路104,可以理解为用于对初始电压信号基于预设运算规则进行放大处理,得到负偏压信号,将负偏压信号加载到第一光电传感器L1的阳极,以降低第一光电传感器L1的电流值的保护电路。The current limiting protection circuit 104 can be understood as being used to amplify the initial voltage signal based on a preset operation rule to obtain a negative bias signal, and load the negative bias signal to the anode of the first photoelectric sensor L1 to reduce the first photoelectric Protection circuit for the current value of sensor L1.
举例来说,本申请的限流保护电路的工作过程为:第一光电传感器L1由高灵敏度的SiPM(硅光电倍增管)组成,当接收到光子时发生雪崩效应,第一光电传感器L1中每个微单元输出的电流突然变大,电流值和光子的数量呈线性正相关,且光电放大能力(即增益,Gain)与偏置电压(Bias Voltage)正相关;T1时刻,控制器102向限流保护电路104输出驱动电压信号V 1,限流保护电路104接收驱动电压信号V 1后进行放大处理,得到负偏压信号V m,并加载在第一光电传感器L1的阳极上;第一光电传感器L1输出第一电流信号的电流值I a,接收输出电路103接收该第一电流信号后进行处理后获得第一回波信号,电压值为V L,以及将该第一回波信号V L传输给控制器102;控制器102接收到该第一回波信号V L,解析电压值V L作为信号特征值,与电压阈值V 0比较;当第一回波信号的电压值V L>电压阈值V 0,控制器102向限流保护电路104输出初始电压信号V 2,其中,初始电压信号的电压值V 2>驱动电压信号的电压值V 1;限流保护电路104接收初始电压信号V 2后进行放大处理,得到负偏 压信号V n,并加载在第一光电传感器L1的阳极上,由于电源101加载在第一光电传感器L1的正偏压信号V d没有改变,第一光电传感器L1的偏置电压减小,光电放大能力减小(即增益减小),第一光电传感器L1的电流I a的电流值变小。 For example, the working process of the current limiting protection circuit of the present application is as follows: the first photosensor L1 is composed of a high-sensitivity SiPM (silicon photomultiplier tube), and an avalanche effect occurs when photons are received. The current output by each micro-unit suddenly increases, the current value and the number of photons are linearly positively correlated, and the photoelectric amplification capability (ie Gain, Gain) is positively correlated with the bias voltage (Bias Voltage); at time T1, the controller 102 moves to the limit The current protection circuit 104 outputs the driving voltage signal V 1 , and the current limiting protection circuit 104 receives the driving voltage signal V 1 and amplifies it to obtain a negative bias signal V m , which is loaded on the anode of the first photoelectric sensor L1; The sensor L1 outputs the current value I a of the first current signal, the receiving and outputting circuit 103 receives the first current signal and processes it to obtain a first echo signal, the voltage value is VL , and the first echo signal VL It is transmitted to the controller 102; the controller 102 receives the first echo signal VL , analyzes the voltage value VL as the signal characteristic value, and compares it with the voltage threshold V 0 ; when the voltage value of the first echo signal VL > voltage Threshold V 0 , the controller 102 outputs an initial voltage signal V 2 to the current-limiting protection circuit 104 , wherein the voltage value V 2 of the initial voltage signal > the voltage value V 1 of the driving voltage signal; the current-limiting protection circuit 104 receives the initial voltage signal V After 2 , the amplification process is performed to obtain the negative bias signal Vn , which is loaded on the anode of the first photosensor L1. Since the positive bias signal Vd loaded by the power supply 101 on the first photosensor L1 does not change, the first photosensor L1 The bias voltage of L1 decreases, the photoelectric amplification capability decreases (ie the gain decreases), and the current value of the current Ia of the first photoelectric sensor L1 decreases.
本申请一些实施例提供的技术方案带来的有益效果至少包括:利用限流保护电路可以对光电传感器的工作电流进行限制,从而防止工作电流过大导致光电传感器内部发热,从而导致光电传感器工作异常甚至损坏;显著提高在接收高反射能量的情况下光电传感器工作的可靠性,例如物体的反射率较高或物体距离非常近等情况下的可靠性,提高光电传感器的测距能力。The beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damage; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, such as the reliability of the object with high reflectivity or the object is very close, and improve the distance measurement ability of the photoelectric sensor.
如图2所示,为本申请实施例提供的另一种限流保护电路的连接示意图,包括:电源101、第一光电传感器L1、第二光电传感器L2、第一电容C1、第二电容C2、处理电路202、变压器201、限流保护电路104和控制器102;其中,变压器201包括原边线圈和副边线圈。As shown in FIG. 2 , a schematic diagram of connection of another current limiting protection circuit provided by an embodiment of the present application includes: a power supply 101 , a first photoelectric sensor L1 , a second photoelectric sensor L2 , a first capacitor C1 , and a second capacitor C2 , a processing circuit 202, a transformer 201, a current limiting protection circuit 104 and a controller 102; wherein, the transformer 201 includes a primary coil and a secondary coil.
控制器102的第一端与电源101的第一端相连,电源101的第二端与第一光电传感器L1的阴极相连,电源101的第三端与第二光电传感器L2的阴极相连,第一光传感器L1的阳极与第一电容C1的第一端相连,第一电容C1的第二端接地,第一光传感器L1的阳极与变压器201的原边线圈相连,第二光电传感器L2的阳极与第二电容C2的第一端相连,第二电容C2的第二端接地,第二光电传感器L2的阳极与变压器201的原边线圈相连,控制器102的第二端与限流保护电路104相连,限流保护电路104与变压器201的原边线圈相连,变压器201的副边线圈与处理电路202相连,处理电路202与控制器102的第三端相连。The first end of the controller 102 is connected to the first end of the power supply 101, the second end of the power supply 101 is connected to the cathode of the first photoelectric sensor L1, the third end of the power supply 101 is connected to the cathode of the second photoelectric sensor L2, the first The anode of the photosensor L1 is connected to the first end of the first capacitor C1, the second end of the first capacitor C1 is grounded, the anode of the first photosensor L1 is connected to the primary coil of the transformer 201, and the anode of the second photosensor L2 is connected to the primary coil of the transformer 201. The first end of the second capacitor C2 is connected to the ground, the anode of the second photoelectric sensor L2 is connected to the primary coil of the transformer 201 , and the second end of the controller 102 is connected to the current limiting protection circuit 104 , the current limiting protection circuit 104 is connected to the primary coil of the transformer 201 , the secondary coil of the transformer 201 is connected to the processing circuit 202 , and the processing circuit 202 is connected to the third end of the controller 102 .
第二光电传感器L2,在本申请中尤其指单光子列阵传感器,可以理解为在激光通信中使用的雪崩光电二极管,利用了载流子的雪崩倍增效应来放大光电信号以提高检测的灵敏度。The second photoelectric sensor L2, especially referred to as a single-photon array sensor in this application, can be understood as an avalanche photodiode used in laser communication, which utilizes the avalanche multiplication effect of carriers to amplify the photoelectric signal to improve detection sensitivity.
在本申请实施例中,第一光电传感器L1和第二光电传感器L2还设置有 去耦电路,去耦电路包括第一电容C1和第二电容C2。第一电容C1的第一端与第一光电传感器L1的阳极相连,第一电容C1的第二端与地(如壳体)相连,第二电容C2的第一端与第二光电传感器L2的阳极相连,第二电容C2的第二端与地(如壳体)相连,第一电容C1和第二电容C2作为去耦电容,用于去除电源噪声,稳定偏置电压。In the embodiment of the present application, the first photosensor L1 and the second photosensor L2 are further provided with a decoupling circuit, and the decoupling circuit includes a first capacitor C1 and a second capacitor C2. The first end of the first capacitor C1 is connected to the anode of the first photoelectric sensor L1, the second end of the first capacitor C1 is connected to the ground (such as the casing), and the first end of the second capacitor C2 is connected to the second photoelectric sensor L2. The anode is connected, the second end of the second capacitor C2 is connected to the ground (such as the casing), and the first capacitor C1 and the second capacitor C2 are used as decoupling capacitors for removing power supply noise and stabilizing the bias voltage.
在本申请实施例中,第二光电传感器L2上设置有遮光部件,遮光部件用于对第二光电传感器L2作遮光处理,可以但不限于遮光板、遮光罩或遮光布等。可以理解的是,在无光照情况下,当施加的偏置电压大于击穿电压时,第二光传感器L2同样会输出第二电流信号。In the embodiment of the present application, the second photoelectric sensor L2 is provided with a shading member, which is used for shading the second photoelectric sensor L2, and may be, but not limited to, a shading plate, a shading cover, or a shading cloth. It can be understood that, in the absence of light, when the applied bias voltage is greater than the breakdown voltage, the second light sensor L2 will also output a second current signal.
下述说明在本申请实施例中,第二光电传感器L2的工作原理。在第一光电传感器L1上由激光回波信号导致的电流信号称为光电流信号,电源提供的偏置电压导致的电流信号称为偏置电流信号。因此第一光电传感器L1输出的第一电流信号中,可能在大部分时刻仅包括偏置电流信号,而在激光回波信号到达第一光电传感器L1的时刻,第一电流信号中包括光电流信号和偏置电流信号。同时,光电流信号相比于偏置电流信号较弱,因此处理电路202乃至控制器102难以检测到光电流信号。The working principle of the second photoelectric sensor L2 in the embodiment of the present application is described below. The current signal caused by the laser echo signal on the first photosensor L1 is called the photocurrent signal, and the current signal caused by the bias voltage provided by the power supply is called the bias current signal. Therefore, the first current signal output by the first photosensor L1 may only include the bias current signal at most of the time, and at the moment when the laser echo signal reaches the first photosensor L1, the first current signal includes the photocurrent signal and bias current signal. Meanwhile, the photocurrent signal is weaker than the bias current signal, so it is difficult for the processing circuit 202 and even the controller 102 to detect the photocurrent signal.
因为第二光电传感器L2与第一光电传感器L1并联,且由同一个电源101和控制器102提供相同的偏置电压,因此第二光电传感器L2的偏置电压与第一光电传感器L1的偏置电压相等,即第二光电传感器L2与第一光电传感器L1的偏置电流信号相同。同时,因为第二光电传感器L2处于遮光状态,因此第二光电传感器L2输出的第二电流信号在任何时刻均是偏置电流信号。因此,变压器201接收第一光电传感器L1的第一回波信号和第二光电传感器L2的第二回波信号进行差分处理,将第一回波信号中的属于第二回波信号的电流值去除,得到差分电流信号。处理电路202得到的差分电流信号中仅为光电流部分。因此处理电路202得到的差分电流信号在激光回波信号到达第一光电传感器L1的时刻为光电流信号,在激光回波信号到达第一光电传感器L1的时刻之外差分电流信号应该为0。Because the second photosensor L2 is connected in parallel with the first photosensor L1, and the same bias voltage is provided by the same power supply 101 and the controller 102, the bias voltage of the second photosensor L2 is the same as that of the first photosensor L1. The voltages are equal, that is, the bias current signals of the second photosensor L2 and the first photosensor L1 are the same. Meanwhile, because the second photosensor L2 is in a light-shielding state, the second current signal output by the second photosensor L2 is a bias current signal at any time. Therefore, the transformer 201 receives the first echo signal of the first photoelectric sensor L1 and the second echo signal of the second photoelectric sensor L2, performs differential processing, and removes the current value belonging to the second echo signal in the first echo signal. , the differential current signal is obtained. The differential current signal obtained by the processing circuit 202 is only the photocurrent part. Therefore, the differential current signal obtained by the processing circuit 202 is a photocurrent signal when the laser echo signal reaches the first photosensor L1, and the differential current signal should be 0 outside the moment when the laser echo signal reaches the first photosensor L1.
本申请一些实施例提供的技术方案带来的有益效果至少包括:因此处理电路202乃至控制器102可以灵敏地检测到光电流信号,并将检测到处理电路202得到差分电流信号不为0的时刻,作为激光回波信号到达第一光电传感器L1的时刻;提高了检测到激光回波信号的灵敏度和准确度,提高了测距的准确性。The beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: Therefore, the processing circuit 202 and even the controller 102 can sensitively detect the photocurrent signal, and detect the moment when the differential current signal obtained by the processing circuit 202 is not 0 , as the moment when the laser echo signal reaches the first photoelectric sensor L1; the sensitivity and accuracy of detecting the laser echo signal are improved, and the accuracy of ranging is improved.
变压器201,可以理解为接收第一光电传感器L1的第一回波信号和第二光电传感器L2上的第二回波信号,作差分处理得到差分电流信号,以及利用电磁感应的原理将差分电流信号的电压值放大的元器件。优选的,本申请中采用巴伦变压器,即一种具有平衡传非平衡、阻抗变换作用,用于双绞线的不平衡变压器。The transformer 201 can be understood as receiving the first echo signal of the first photoelectric sensor L1 and the second echo signal on the second photoelectric sensor L2, performing differential processing to obtain a differential current signal, and using the principle of electromagnetic induction to convert the differential current signal. A component that amplifies the voltage value. Preferably, a balun transformer is used in the present application, that is, an unbalanced transformer with functions of balanced transmission, unbalanced transmission and impedance transformation, which is used for twisted pair wires.
处理电路202,可以理解为通过变压器201采集差分电流信号,以及将该差分电流信号进行处理得到差分电压信号,并将差分电压信号传输给控制器101的电路。The processing circuit 202 can be understood as a circuit that collects the differential current signal through the transformer 201 , processes the differential current signal to obtain a differential voltage signal, and transmits the differential voltage signal to the controller 101 .
需要说明的是,接收输出电路103的实现至少有两种方式:一种是先将第一光电传感器L1和第二光电传感器L2上的第一回波信号和第二回波信号进行差分处理,然后跨阻放大,即上述本申请实施例提供的实施方式;另一种是先将第一回波信号和第二回波信号跨阻放大,然后将第一回波信号和第二回波信号做差分处理,即为第二种实施方式。由于第二种实施方式会限制信号链路的有效动态范围,并增加功耗和成本,因此,本发明采用第一种实施方式实现接收输出电路103。It should be noted that there are at least two ways to realize the receiving and outputting circuit 103: one is to first perform differential processing on the first echo signal and the second echo signal on the first photoelectric sensor L1 and the second photoelectric sensor L2, Then transimpedance amplification, that is, the implementation provided by the above-mentioned embodiment of the present application; the other is to first amplify the first echo signal and the second echo signal by transimpedance, and then amplify the first echo signal and the second echo signal. Doing differential processing is the second implementation. Since the second embodiment will limit the effective dynamic range of the signal chain and increase power consumption and cost, the present invention adopts the first embodiment to realize the receiving and outputting circuit 103 .
本申请一些实施例提供的技术方案带来的有益效果至少包括:本实施例可以选用低插入损耗和高对称性的巴伦变压器,即信号衰减小且对消处理性能好的巴伦变压器,因此可以得到接近单个光电传感器输出的光电流信号范围;主要增加了匹配电阻RT的热噪声,该噪声远小于跨阻放大电路本身的电流噪声(跨阻放大处理均存在此噪声),对光电流信号的信噪比的影响基本可以忽略;仅增加了极小的热噪声,而光电流信号基本未削弱,对信噪比影响小,该电路的光电流信号放大能力几乎没有下降。The beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: in this embodiment, a balun transformer with low insertion loss and high symmetry can be selected, that is, a balun transformer with small signal attenuation and good cancellation processing performance, so The photocurrent signal range close to the output of a single photoelectric sensor can be obtained; it mainly increases the thermal noise of the matching resistor RT, which is much smaller than the current noise of the transimpedance amplification circuit itself (this noise exists in the transimpedance amplification process), and the photocurrent signal The influence of the signal-to-noise ratio is basically negligible; only a very small thermal noise is added, while the photocurrent signal is basically not weakened, and the influence on the signal-to-noise ratio is small, and the photocurrent signal amplification ability of the circuit is almost not reduced.
在另一个实施例中,接收输出电路103的实施方式可以是:第一光电传感器L1和第二光电传感器L2输出的第一回波信号和第二回波信号分别输入跨阻放大器进行一级放大,输出放大后的第一回波信号和第二回波信号,再将放大后的第一回波信号和第二回波信号输入减法器,输出差分电压信号,然后将差分电压信号进行次级放大。In another embodiment, the implementation of the receiving output circuit 103 may be: the first echo signal and the second echo signal output by the first photosensor L1 and the second photosensor L2 are respectively input to a transimpedance amplifier for first-stage amplification , output the amplified first echo signal and the second echo signal, and then input the amplified first echo signal and the second echo signal into the subtractor, output the differential voltage signal, and then perform the secondary enlarge.
限流保护电路104,可以理解为用于对初始电压信号基于预设运算规则进行放大处理,得到负偏压信号,将负偏压信号加载到第一光电传感器L1的阳极,以降低第一光电传感器L1的电流值的保护电路。The current limiting protection circuit 104 can be understood as being used to amplify the initial voltage signal based on a preset operation rule to obtain a negative bias signal, and load the negative bias signal to the anode of the first photoelectric sensor L1 to reduce the first photoelectric Protection circuit for the current value of sensor L1.
举例来说,本申请的限流保护电路的工作过程为:第一光电传感器L1由高灵敏度的SiPM(硅光电倍增管)组成,当接收到光子时发生雪崩效应,第一光电传感器L1中每个微单元输出的电流突然变大,电流值和光子的数量呈线性正相关,且光电放大能力(即增益,Gain)与偏置电压(Bias Voltage)正相关;T1时刻,控制器101向限流保护电路104输出驱动电压信号V 1,限流保护电路104接收驱动电压信号V 1后进行放大处理,得到负偏压信号V m,并加载在第一光电传感器L1和第二光电传感器L2的阳极上;第一光电传感器L1输出第一回波信号I a,第二光电传感器L2在偏置电压的作用下输出第二回波信号I b;处理电路202通过变压器201接收到差分电流信号I c,其中,I c=I a-I b,将差分电流信号I c转换为电压信号并进行放大,得到差分电压信号V c,将差分电压信号V c输出给控制器102;控制器102接收到差分电压信号V c,与电压阈值V 0比较,且差分电压信号的电压值V c>电压阈值V 0,控制器101向限流保护电路104输出初始电压信号V 2,其中,初始电压信号V 2>驱动电压信号V 1;限流保护电路104接收初始电压信号V 2后进行放大处理,得到负偏压信号V n,并加载在第一光电传感器L1和第二光电传感器L2的阳极上,由于电源101加载在第一光电传感器L1的正偏压信号V d没有改变,第一光电传感器L1的偏置电压减小,光电放大能力减小(即增益减小),第一光电传感器L1的电流I a的电流值变小。 For example, the working process of the current limiting protection circuit of the present application is as follows: the first photosensor L1 is composed of a high-sensitivity SiPM (silicon photomultiplier tube), and an avalanche effect occurs when photons are received. The current output by each micro-unit suddenly increases, the current value and the number of photons are linearly positively correlated, and the photoelectric amplification capability (ie Gain, Gain) is positively correlated with the bias voltage (Bias Voltage); at time T1, the controller 101 moves to the limit The current protection circuit 104 outputs the driving voltage signal V 1 , and the current limiting protection circuit 104 receives the driving voltage signal V 1 and amplifies it to obtain a negative bias signal V m , which is loaded on the first photoelectric sensor L1 and the second photoelectric sensor L2 On the anode; the first photoelectric sensor L1 outputs the first echo signal I a , the second photoelectric sensor L2 outputs the second echo signal I b under the action of the bias voltage; the processing circuit 202 receives the differential current signal I through the transformer 201 c , where I c =I a -I b , convert the differential current signal I c into a voltage signal and amplify it to obtain a differential voltage signal V c , and output the differential voltage signal V c to the controller 102 ; the controller 102 receives When the differential voltage signal V c is compared with the voltage threshold V 0 , and the voltage value of the differential voltage signal V c > the voltage threshold V 0 , the controller 101 outputs the initial voltage signal V 2 to the current limiting protection circuit 104 , wherein the initial voltage signal V 2 > driving voltage signal V 1 ; the current-limiting protection circuit 104 receives the initial voltage signal V 2 and amplifies it to obtain a negative bias signal V n , which is loaded on the anodes of the first photosensor L1 and the second photosensor L2 , since the positive bias signal V d loaded by the power supply 101 on the first photosensor L1 does not change, the bias voltage of the first photosensor L1 decreases, and the photoelectric amplification capability decreases (ie, the gain decreases), and the first photosensor L1 The current value of the current I a becomes smaller.
本申请一些实施例提供的技术方案带来的有益效果至少包括:利用限流保 护电路可以对光电传感器的工作电流进行限制,从而防止工作电流过大导致光电传感器内部发热,从而导致光电传感器工作异常甚至损坏;显著提高在接收高反射能量的情况下光电传感器工作的可靠性,提高光电传感器的测距能力。The beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damaged; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, and improve the distance measurement ability of the photoelectric sensor.
如图3所示,为本申请实施例提供的另一种限流保护电路的连接示意图,包括:电源101、第一光电传感器L1、第二光电传感器L2、第一电容C1、第二电容C2、处理电路202、变压器201、限流保护电路104和控制器102;其中,变压器201包括原边线圈和副边线圈。As shown in FIG. 3 , a schematic diagram of the connection of another current limiting protection circuit provided by an embodiment of the present application includes: a power supply 101 , a first photoelectric sensor L1 , a second photoelectric sensor L2 , a first capacitor C1 , and a second capacitor C2 , a processing circuit 202, a transformer 201, a current limiting protection circuit 104 and a controller 102; wherein, the transformer 201 includes a primary coil and a secondary coil.
控制器102的第一端与电源101的第一端相连,电源101的第二端与第一光电传感器L1的阴极相连,电源101的第三端与第二光电传感器L2的阴极相连,第一光传感器L1的阳极与第一电容C1的第一端相连,第一电容C1的第二端接地,第一光传感器L1的阳极与变压器201的原边线圈相连,第二光电传感器L2的阳极与第二电容C2的第一端相连,第二电容C2的第二端接地,第二光电传感器L2的阳极与变压器201的原边线圈相连,控制器102的第二端与限流保护电路104相连,限流保护电路104与变压器201的原边线圈相连,变压器201的副边线圈与处理电路202相连,处理电路202与控制器102的第三端相连。The first end of the controller 102 is connected to the first end of the power supply 101, the second end of the power supply 101 is connected to the cathode of the first photoelectric sensor L1, the third end of the power supply 101 is connected to the cathode of the second photoelectric sensor L2, the first The anode of the photosensor L1 is connected to the first end of the first capacitor C1, the second end of the first capacitor C1 is grounded, the anode of the first photosensor L1 is connected to the primary coil of the transformer 201, and the anode of the second photosensor L2 is connected to the primary coil of the transformer 201. The first end of the second capacitor C2 is connected to the ground, the anode of the second photoelectric sensor L2 is connected to the primary coil of the transformer 201 , and the second end of the controller 102 is connected to the current limiting protection circuit 104 , the current limiting protection circuit 104 is connected to the primary coil of the transformer 201 , the secondary coil of the transformer 201 is connected to the processing circuit 202 , and the processing circuit 202 is connected to the third end of the controller 102 .
限流保护电路104包括:数模转换器1041、高压放大器U1、第一电阻R1和第三电容C3。The current limiting protection circuit 104 includes: a digital-to-analog converter 1041, a high-voltage amplifier U1, a first resistor R1 and a third capacitor C3.
高压放大器U1的反相输入端与变压器103的原边线圈相连,高压放大器U1的输出端与第一电阻R1的第一端相连,第一电阻R1的第一端与第三电容C3的第一端相连,第一电阻R1的第二端与第三电容C3的第二端相连,数模转换器1041的输入端与控制器102的第二端相连,数模转换器1041的输出端与高压放大器U1的同相输入端相连。The inverting input terminal of the high voltage amplifier U1 is connected to the primary coil of the transformer 103, the output terminal of the high voltage amplifier U1 is connected to the first terminal of the first resistor R1, and the first terminal of the first resistor R1 is connected to the first terminal of the third capacitor C3. The second end of the first resistor R1 is connected to the second end of the third capacitor C3, the input end of the digital-to-analog converter 1041 is connected to the second end of the controller 102, and the output end of the digital-to-analog converter 1041 is connected to the high voltage The non-inverting input of amplifier U1 is connected.
接收输出电路103包括:变压器201、跨阻放大器301、放大调理电路302和模数转换器303。The receiving output circuit 103 includes: a transformer 201 , a transimpedance amplifier 301 , an amplification conditioning circuit 302 and an analog-to-digital converter 303 .
跨阻放大器301连接变压器201的副边线圈,放大调理电路302连接跨阻 放大器301,数模转换器303与放大调理电路302相连,控制器102的第二端与数模转换器303相连。The transimpedance amplifier 301 is connected to the secondary coil of the transformer 201, the amplifying and conditioning circuit 302 is connected to the transimpedance amplifier 301, the digital-to-analog converter 303 is connected to the amplifying and conditioning circuit 302, and the second end of the controller 102 is connected to the digital-to-analog converter 303.
数模转换器1041(DAC,D/A转换器),可以理解为把离散的数字信号转换为连续的模拟信号的器件,主要由数字寄存器、模拟电子开关、位权网络、求和运算放大器和基准电压源(或恒流源)组成。例如,数模转换器1041的型号包括但不限于DAC7311IDCKR、DAC7311IDCKR等型号。The digital-to-analog converter 1041 (DAC, D/A converter) can be understood as a device that converts discrete digital signals into continuous analog signals, mainly composed of digital registers, analog electronic switches, bit weight networks, summing operational amplifiers and The reference voltage source (or constant current source) is composed. For example, the models of the digital-to-analog converter 1041 include, but are not limited to, models such as DAC7311IDCKR, DAC7311IDCKR, and the like.
在本申请实施例中,数模转换器1041用于接收控制器102的初始电压信号后进行数模转换,得到转换电压信号,以及将转换电压信号输出给高压放大器U1。In the embodiment of the present application, the digital-to-analog converter 1041 is configured to perform digital-to-analog conversion after receiving the initial voltage signal of the controller 102 to obtain the converted voltage signal, and output the converted voltage signal to the high-voltage amplifier U1.
在另一个实施例中,限流保护电路104中不包括数模转换器1041,控制器102的第二端与高压放大器U1的同相输入端相连。在本实施例中,控制器102的第二端输出的初始电压信号为模电信号,可以直接被高压放大器U1接收。In another embodiment, the current-limiting protection circuit 104 does not include the digital-to-analog converter 1041, and the second terminal of the controller 102 is connected to the non-inverting input terminal of the high-voltage amplifier U1. In this embodiment, the initial voltage signal output by the second end of the controller 102 is a modulo electrical signal, which can be directly received by the high-voltage amplifier U1.
高压放大器U1,可以理解为一种高电压幅度输出的信号放大器,用于接收来自数模转换器1041的转换电压信号后基于预设运算规则进行放大处理,得到负偏压信号,经过第一电阻R1限流后加载在第一光电传感器L1的阳极。例如,加载在高压放大器U1的同相输入端的转换电压信号的电压值为5V,输出负偏压信号200V并加载在第一光电传感器L1的阳极。The high-voltage amplifier U1 can be understood as a signal amplifier with high-voltage amplitude output, which is used for receiving the converted voltage signal from the digital-to-analog converter 1041 and performing amplification processing based on a preset operation rule to obtain a negative bias signal, which passes through the first resistor. After R1 is limited, it is loaded on the anode of the first photoelectric sensor L1. For example, the voltage value of the converted voltage signal loaded on the non-inverting input terminal of the high voltage amplifier U1 is 5V, and the negative bias voltage signal of 200V is output and loaded on the anode of the first photosensor L1.
在本申请实施例中,在第一电阻R1的两端并联第三电容C3。需要说明的是,当光子入射时,入射光子可以被大量单光子雪崩二极管有效吸收并激发雪崩效应,从而使得大量单光子雪崩二极管导通输出脉冲电流;此后需要对单光子雪崩二极管两端的等效电容C cell(由于硅光电倍增管的结构导致每个单光子雪崩二极管均并联有一个等效电容)进行充电,使得雪崩二极管的等效电容充电完成,从而恢复到正常的偏压状态,在等效电容充电完成前,硅光电倍增管难以有效检测入射光并输出电流;在本申请实施例中,等效电容指第一电容C1和第二电容C2,其中,等效电容C cell和猝灭电阻R q决定了微单元的恢复时间常数,恢复到90%偏压的时间约为2.3倍时间常数,即恢复时间可以为: T recovery=2.3×R q×C cell。当限流保护电路104中仅只有第一电阻R1时,第一电阻R1与第一电容C1或第二电容C2组成RC电路,当偏置电压大于击穿电压且第一光电传感器L1发生雪崩效应之后,该RC电路会减缓第一光电传感器L1阳极端的电压变化,减慢第一光电传感器L1的恢复时间。 In the embodiment of the present application, a third capacitor C3 is connected in parallel with both ends of the first resistor R1. It should be noted that when a photon is incident, the incident photon can be effectively absorbed by a large number of single-photon avalanche diodes and excite the avalanche effect, so that a large number of single-photon avalanche diodes can be turned on and output pulse current; The capacitor C cell (due to the structure of the silicon photomultiplier tube, each single-photon avalanche diode is connected with an equivalent capacitor in parallel) is charged, so that the equivalent capacitor of the avalanche diode is charged, thereby returning to the normal bias state, waiting for Before the charging of the effective capacitor is completed, it is difficult for the silicon photomultiplier tube to effectively detect the incident light and output the current; in the embodiment of the present application, the equivalent capacitance refers to the first capacitor C1 and the second capacitor C2, wherein the equivalent capacitance C cell and the quenching The resistance R q determines the recovery time constant of the microcell, and the time to recover to 90% of the bias voltage is about 2.3 times the time constant, that is, the recovery time can be: T recovery =2.3×R q ×C cell . When there is only the first resistor R1 in the current limiting protection circuit 104, the first resistor R1 and the first capacitor C1 or the second capacitor C2 form an RC circuit. When the bias voltage is greater than the breakdown voltage and the avalanche effect occurs in the first photosensor L1 , the RC circuit will slow down the voltage change of the anode terminal of the first photoelectric sensor L1, and slow down the recovery time of the first photoelectric sensor L1.
本申请一些实施例提供的技术方案带来的有益效果至少包括:在第一电阻R1的两端并联第三电容C3,可以在第一光电传感器L1输出的电流值快速变化时储存能量,并能提供给第一光电传感器L1阳极端电压快速变化所需要的电荷,加快第一光电传感器L1的恢复时间。The beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: connecting a third capacitor C3 in parallel with both ends of the first resistor R1, which can store energy when the current value output by the first photoelectric sensor L1 changes rapidly, and can The charge required for the rapid change of the voltage at the anode terminal of the first photosensor L1 is provided to speed up the recovery time of the first photosensor L1.
跨阻放大器301(trans-impedance amplifier,TIA),可以理解为将输入的电压信号转换成满足一定关系的电流信号,转换后的电流相当一个输出可调的恒流源,其输出电流应能够保持稳定而不会随负载的变化而变化。在本申请实施例中,跨阻放大器301将通过变压器201采集的差分电流信号,经过电流电压转换为待处理差分电压信号,以及输出给放大调理电路302。The trans-impedance amplifier 301 (trans-impedance amplifier, TIA) can be understood as converting the input voltage signal into a current signal that satisfies a certain relationship. The converted current is equivalent to a constant current source with adjustable output, and its output current should be able to maintain Stable without changing with load changes. In the embodiment of the present application, the transimpedance amplifier 301 converts the differential current signal collected by the transformer 201 into a differential voltage signal to be processed through the current and voltage, and outputs the signal to the amplification and conditioning circuit 302 .
放大调理电路302,可以理解为将来自传感器的模拟信号放大、缓冲或定标,使其适合于模数转换器(ADC)的输入并得到数字信号,从而向控制器输出,以使控制器完成数据采集、控制过程、执行计算显示读出和其他目的。在本申请实施例中,放大调理电路302用于将待处理差分电压信号进行放大和调理处理后,得到差分电压信号,以及将差分电压信号输出给所述模数转换器303。The amplification conditioning circuit 302 can be understood as amplifying, buffering or scaling the analog signal from the sensor, making it suitable for the input of an analog-to-digital converter (ADC) and obtaining a digital signal, thereby outputting to the controller, so that the controller can complete the Data acquisition, control processes, perform calculations, display readouts, and other purposes. In the embodiment of the present application, the amplification and conditioning circuit 302 is configured to amplify and condition the differential voltage signal to be processed to obtain a differential voltage signal, and output the differential voltage signal to the analog-to-digital converter 303 .
模数转换器303(Analog to Digital Converter,A/D转换器),可以理解为将一个将模拟信号转变为数字信号的电子元件,例如,模数转换器303的型号包括但不限于ADS822E、ADS8472IBRGZT等型号。在本申请实施例中,模数转换器303用于将来自放大调理电路302的差分电压信号进行模数转换后得到数字电压信号,以及将数字电压信号传输给控制器102。The analog-to-digital converter 303 (Analog to Digital Converter, A/D converter) can be understood as an electronic component that converts an analog signal into a digital signal, for example, the model of the analog-to-digital converter 303 includes but is not limited to ADS822E, ADS8472IBRGZT and other models. In the embodiment of the present application, the analog-to-digital converter 303 is configured to perform analog-to-digital conversion on the differential voltage signal from the amplification and conditioning circuit 302 to obtain a digital voltage signal, and transmit the digital voltage signal to the controller 102 .
在另一个实施例中,接收输出电路103中不包括模数转换器303,控制器102的第三端与放大调理电路302相连。在本实施例中,控制器102的第三端可以接收模电信号。In another embodiment, the receiving and outputting circuit 103 does not include the analog-to-digital converter 303 , and the third end of the controller 102 is connected to the amplifying and conditioning circuit 302 . In this embodiment, the third terminal of the controller 102 can receive the analog signal.
本申请实施例中其他单元的说明参见图2所述,工作过程同样参见图2 所述。The description of other units in the embodiment of the present application is described with reference to FIG. 2 , and the working process is also described with reference to FIG. 2 .
本申请一些实施例提供的技术方案带来的有益效果至少包括:利用限流保护电路可以对光电传感器的工作电流进行限制,从而防止工作电流过大导致光电传感器内部发热,从而导致光电传感器工作异常甚至损坏;显著提高在接收高反射能量的情况下光电传感器工作的可靠性,提高光电传感器的测距能力。The beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damaged; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, and improve the distance measurement ability of the photoelectric sensor.
如图4所示,为本申请实施例提供的限流保护方法的流程示意图,由控制器执行,控制器可以采用FPGA(现场可编程门阵列,Field-programmable gate array)或者ASIC(Application Specific Integrated Circuit,专用集成电路)实现。其中,现场可编程门阵列是一种程序驱动逻辑器件,就像一个微处理器,其控制程序存储在内存中,加电后,程序自动装载到芯片执行。现场可编程门阵列一般由2个可编程模块和存储SRAM构成。CLB是可编程逻辑块,是现场可编程门阵列的核心组成部分,是实现逻辑功能的基本单元,主要由逻辑函数发生器、触发器、数据选择器等数字逻辑电路构成。其中,ASIC芯片技术所有接口模块(包括控制模块)都连接到一个矩阵式背板上,通过ASIC芯片到ASIC芯片的直接转发,可同时进行多个模块之间的通信;每个模块的缓存只处理本模块上的输入输出队列,因此对内存芯片性能的要求大大低于共享内存方式。总之,交换矩阵的特点是访问效率高,适合同时进行多点访问,容易提供非常高的带宽,并且性能扩展方便,不易受CPU、总线以及内存技术的限制。As shown in FIG. 4 , a schematic flowchart of a current limiting protection method provided in an embodiment of the present application is executed by a controller, and the controller may adopt an FPGA (Field-programmable gate array, Field-programmable gate array) or an ASIC (Application Specific Integrated Circuit, application-specific integrated circuit) implementation. Among them, the field programmable gate array is a program-driven logic device, just like a microprocessor, its control program is stored in the memory, and after power-on, the program is automatically loaded into the chip for execution. Field programmable gate array is generally composed of two programmable modules and storage SRAM. CLB is a programmable logic block, the core component of the field programmable gate array, and the basic unit for realizing logic functions. It is mainly composed of digital logic circuits such as logic function generators, flip-flops, and data selectors. Among them, all interface modules (including control modules) of ASIC chip technology are connected to a matrix backplane, and communication between multiple modules can be carried out at the same time through direct forwarding from ASIC chip to ASIC chip; the cache of each module is only It handles the input and output queues on this module, so the performance requirements of the memory chip are much lower than those of the shared memory method. In short, the switch matrix is characterized by high access efficiency, suitable for simultaneous multi-point access, easy to provide very high bandwidth, and easy performance expansion, not easily limited by CPU, bus and memory technology.
本申请提出的限流保护方法包括以下步骤:The current limiting protection method proposed in this application includes the following steps:
S401、向限流保护电路输出驱动电压信号。S401. Output a driving voltage signal to the current limiting protection circuit.
控制器向限流保护电路输出驱动电压信号,限流保护电路对初始电压信号基于预设运算规则进行放大处理,得到负偏压信号,将负偏压信号加载到第一光电传感器和第二光电传感器的阳极,电源在第一光电传感器和第二光电传感器阴极提供正偏压信号,以使第一光电传感器和第二光电传感器上的偏置电压大于击穿电压,第一光电传感器和第二光电传感器正常工作。The controller outputs a driving voltage signal to the current-limiting protection circuit, and the current-limiting protection circuit amplifies the initial voltage signal based on a preset operation rule, obtains a negative bias signal, and loads the negative bias signal to the first photoelectric sensor and the second photoelectric The anode of the sensor, the power supply provides a positive bias signal at the cathode of the first photosensor and the second photosensor, so that the bias voltage on the first photosensor and the second photosensor is greater than the breakdown voltage, the first photosensor and the second photosensor. The photoelectric sensor is working normally.
例如,控制器向限流保护电路104输出驱动电压信号V1,限流保护电路 104接收驱动电压信号V1后进行放大处理,得到负偏压信号V m,并加载在第一光电传感器和第二光电传感器器的阳极上;电源输出正偏压信号V d并加载在第一光电传感器和第二光电传感器的阴极上;其中,V m<V d,因此在第一光电传感器和第二光电传感器上形成负偏置电压,该偏置电压大于第一光电传感器的击穿电压;当第一光电传感器接收到光子时,输出电流值。 For example, the controller outputs a driving voltage signal V1 to the current-limiting protection circuit 104, and the current-limiting protection circuit 104 receives the driving voltage signal V1 and amplifies it to obtain a negative bias signal Vm , which is loaded on the first photoelectric sensor and the second photoelectric On the anode of the sensor; the power supply outputs a positive bias signal V d and is loaded on the cathodes of the first and second photosensors; where V m <V d , so on the first and second photosensors A negative bias voltage is formed, and the bias voltage is greater than the breakdown voltage of the first photosensor; when the first photosensor receives photons, a current value is output.
S402、接收来自接收输出电路的第一回波信号,解析第一回波信号得到信号特征值。S402. Receive the first echo signal from the receiving output circuit, and analyze the first echo signal to obtain the signal characteristic value.
接收输出电路,可以理解为采集第一光电传感器和第二光电传感器上的差分电流信号,以及将该差分电流信号进行处理得到差分电压信号,并将差分电压信号传输给控制器的电路。The receiving and outputting circuit can be understood as a circuit that collects the differential current signal on the first photoelectric sensor and the second photoelectric sensor, processes the differential current signal to obtain a differential voltage signal, and transmits the differential voltage signal to the controller.
在一个申请实施例中,电压补偿电路的实施方式可以是:第一光电传感器和第二光电传感器输出的第一回波信号和第二回波信号分别输入巴伦变压器平衡侧两端,差分处理后得到的差分电流信号通过变压器耦合到一次侧,然后将差分电流信号输入跨阻放大器进行跨阻放大,得到差分电压信号。In an application example, the implementation of the voltage compensation circuit may be: the first echo signal and the second echo signal output by the first photoelectric sensor and the second photoelectric sensor are respectively input to both ends of the balanced side of the balun transformer, and the differential processing is performed. The obtained differential current signal is coupled to the primary side through a transformer, and then the differential current signal is input to a transimpedance amplifier for transimpedance amplification to obtain a differential voltage signal.
例如,第一光电传感器输出第一回波信号I a,第二光电传感器在偏置电压的作用下输出第二回波信号I b;电压补偿电路通过变压器接收到差分电流信号I c,其中,Ic=Ia-Ib,将差分电流信号Ic转换为差分电压信号并进行放大,得到差分电压信号V c,将差分电压信号V c输出给控制器;控制器接收到该差分电压信号V c,进行解析后获得电压值50V作为该差分电压V c的信号特征值。 For example, the first photoelectric sensor outputs the first echo signal I a , and the second photoelectric sensor outputs the second echo signal I b under the action of the bias voltage; the voltage compensation circuit receives the differential current signal I c through the transformer, wherein, Ic=Ia-Ib, convert the differential current signal Ic into a differential voltage signal and amplify it to obtain a differential voltage signal V c , and output the differential voltage signal V c to the controller; the controller receives the differential voltage signal V c and performs After analysis, a voltage value of 50V is obtained as the signal characteristic value of the differential voltage Vc .
S403、基于信号特征值,向限流保护电路输出初始电压信号。S403. Based on the signal characteristic value, output an initial voltage signal to the current limiting protection circuit.
例如,控制器接收到差分电压信号V c,与电压阈值V 0比较,且差分电压信号V c>电压阈值V 0,控制器向限流保护电路输出初始电压信号V 2,其中,初始电压信号V 2>驱动电压信号V 1;限流保护电路接收初始电压信号V 2后进行放大处理,得到负偏压信号V n,并加载在第一光电传感和第二光电传感器的阳极上,由于电源加载在第一光电传感器的负偏压信号V d没有改变,第一光电传感器的偏置电压减小,光电放大能力减小(即增益减小),第一光电传感器的第一回波信号I a的电流值变小。 For example, the controller receives the differential voltage signal V c and compares it with the voltage threshold V 0 , and the differential voltage signal V c > the voltage threshold V 0 , the controller outputs the initial voltage signal V 2 to the current limiting protection circuit, wherein the initial voltage signal V 2 > driving voltage signal V 1 ; the current-limiting protection circuit receives the initial voltage signal V 2 and amplifies it to obtain a negative bias signal V n , which is loaded on the anodes of the first photoelectric sensor and the second photoelectric sensor. The negative bias signal V d loaded by the power supply on the first photoelectric sensor does not change, the bias voltage of the first photoelectric sensor is reduced, the photoelectric amplification capability is reduced (that is, the gain is reduced), and the first echo signal of the first photoelectric sensor is reduced. The current value of I a becomes smaller.
在一个实施例中,控制器向限流保护电路输出初始电压信号,包括:基于差分电压信号获得电压值,该电压值作为信号特征值;计算电压值与电压阈值的偏移量;基于偏移量与PID计算模型获取初始电压信号的电压值;向限流保护电路输出所述初始电压信号。In one embodiment, the controller outputs an initial voltage signal to the current-limiting protection circuit, including: obtaining a voltage value based on the differential voltage signal, the voltage value being used as a signal characteristic value; calculating an offset between the voltage value and a voltage threshold; based on the offset The voltage value of the initial voltage signal is obtained through the quantity and PID calculation model; the initial voltage signal is output to the current limiting protection circuit.
PID计算模型,是基于PID控制理论对输入值进行计算从而得到输出值的计算模型。PID控制理论,可以理解为根据给定值和实际输出值构成控制偏差,将偏差按比例、积分和微分通过线性组合构成控制量,对被控对象进行控制的线性控制理论。The PID calculation model is a calculation model that calculates the input value based on the PID control theory to obtain the output value. PID control theory can be understood as a linear control theory in which a control deviation is formed according to a given value and an actual output value, and the deviation is formed by a linear combination of proportional, integral and differential to form a control quantity, and the controlled object is controlled.
例如,控制器接收到差分电压信号V c=50V,电压阈值V 0为30V,差分电压信号V c与电压阈值V 0的偏移量e的计算公式为: For example, the controller receives the differential voltage signal V c =50V, the voltage threshold V 0 is 30 V, and the calculation formula of the offset e between the differential voltage signal V c and the voltage threshold V 0 is:
e(t)=V c(t)-V 0(t) e(t)=V c (t)-V 0 (t)
将偏差量e的比例(P)、积分(I)和微分(D)通过线性组合构成PID计算模型的基础公式,控制规律参考下述公式:The proportional (P), integral (I) and differential (D) of the deviation e are linearly combined to form the basic formula of the PID calculation model. The control law refers to the following formula:
Figure PCTCN2020136617-appb-000001
Figure PCTCN2020136617-appb-000001
其中,Kp为比例系数,Ki为积分常数,Kd为微分常数;Among them, Kp is the proportional coefficient, Ki is the integral constant, and Kd is the differential constant;
基于上述规律构成PID计算模型的基础公式,得到初始电压信号V 2为60V。PID计算模型中的主要参数的确定有以下方法:基于被控过程对象参数辨识的整定方法,这种方法首先要辨识出对象的参数模型,再利用极点配置整定法、相消原理法等理论计算整定法整定;基于抽取对象输出响应特征参数整定法,如Z-N参数整定法(也称临界比例度法);参数优化方法;基于模式识别的专家系统法以及基于控制器自身控制行为的控制器参数在线整定方法等。 Based on the above rules, the basic formula of the PID calculation model is formed, and the initial voltage signal V 2 is obtained as 60V. The main parameters in the PID calculation model are determined by the following methods: a tuning method based on the parameter identification of the controlled process object. This method first identifies the parameter model of the object, and then uses the pole configuration tuning method, the cancellation principle method and other theoretical calculations. Tuning method tuning; parameter tuning method based on the output response characteristic of the extracted object, such as ZN parameter tuning method (also called critical proportionality method); parameter optimization method; pattern recognition-based expert system method and controller parameters based on the control behavior of the controller itself Online tuning method, etc.
上述仅为控制器基于差分电压信号的电压值得到初始电压信号的电压值的一种可行的方法,本申请不对控制器的计算方法做具体限定。The above is only a feasible method for the controller to obtain the voltage value of the initial voltage signal based on the voltage value of the differential voltage signal, and the application does not specifically limit the calculation method of the controller.
本申请一些实施例提供的技术方案带来的有益效果至少包括:利用限流保护电路可以对光电传感器的工作电流进行限制,从而防止工作电流过大导致光电传感器内部发热,从而导致光电传感器工作异常甚至损坏;显著提高在接收高反射能量的情况下光电传感器工作的可靠性,提高光电传感器的测距能力。The beneficial effects brought by the technical solutions provided by some embodiments of the present application at least include: using a current-limiting protection circuit to limit the working current of the photoelectric sensor, thereby preventing the photoelectric sensor from heating due to excessive operating current, thereby causing the photoelectric sensor to work abnormally Even damaged; significantly improve the reliability of the photoelectric sensor in the case of receiving high reflected energy, and improve the distance measurement ability of the photoelectric sensor.
下述为本申请装置实施例,可以用于执行本申请方法实施例。对于本申请装置实施例中未披露的细节,请参照本申请方法实施例。The following are apparatus embodiments of the present application, which can be used to execute the method embodiments of the present application. For details not disclosed in the device embodiments of the present application, please refer to the method embodiments of the present application.
如图5所示,为本申请实施例提供的一种限流保护装置的结构示意图。该限流保护装置可以通过软件、硬件或者两者的结合实现成为装置的全部或一部分。该限流保护装置包括输出模块501、接收模块502和比较模块503。As shown in FIG. 5 , it is a schematic structural diagram of a current limiting protection device according to an embodiment of the present application. The current limiting protection device can be implemented as a whole or a part of the device through software, hardware or a combination of the two. The current limiting protection device includes an output module 501 , a receiving module 502 and a comparison module 503 .
输出模块501,向所述限流保护电路输出驱动电压信号;The output module 501 outputs a driving voltage signal to the current limiting protection circuit;
接收模块502,接收来自所述接收输出电路的第一回波信号,解析所述第一回波信号得到信号特征值;其中,所述第一回波信号由所述接收输出电路通过所述第一光电传感器获取的;The receiving module 502 receives a first echo signal from the receiving output circuit, and analyzes the first echo signal to obtain a signal characteristic value; wherein, the first echo signal is passed by the receiving output circuit through the first echo signal. Acquired by a photoelectric sensor;
比较模块503,基于所述信号特征值,向所述限流保护电路输出所述初始电压信号;其中,所述初始电压信号用于指示所述限流保护电路输出负偏压信号并加载到所述第一光电传感器的阳极,以降低所述第一光电传感器的电流值。The comparison module 503, based on the signal characteristic value, outputs the initial voltage signal to the current limiting protection circuit; wherein, the initial voltage signal is used to instruct the current limiting protection circuit to output a negative bias signal and load it into the current limiting protection circuit the anode of the first photoelectric sensor to reduce the current value of the first photoelectric sensor.
本申请实施例还提供了一种计算机存储介质,所述计算机存储介质可以存储有多条指令,所述指令适于由处理器加载并执行如上述图4所示的所述限流保护方法,具体执行过程可以参见图4所示实施例的具体说明,在此不进行赘述。An embodiment of the present application further provides a computer storage medium, where the computer storage medium can store multiple instructions, and the instructions are suitable for being loaded by a processor and executing the current limiting protection method shown in FIG. 4 above, For the specific execution process, reference may be made to the specific description of the embodiment shown in FIG. 4 , which will not be repeated here.
本申请还提供了一种计算机程序产品,该计算机程序产品存储有至少一条指令,所述至少一条指令由所述处理器加载并执行如上述图4所示的所述限流保护方法,具体执行过程可以参见图4所示实施例的具体说明,在此不进行赘述。The present application also provides a computer program product, the computer program product stores at least one instruction, and the at least one instruction is loaded by the processor to execute the current limiting protection method shown in FIG. For the process, reference may be made to the specific description of the embodiment shown in FIG. 4 , which will not be repeated here.
需要说明的是,上述实施例提供的限流保护装置在执行限流保护方法时,仅以上述各功能模块的划分进行举例说明,实际应用中,可以根据需要而将上述功能分配由不同的功能模块完成,即将设备的内部结构划分成不同的功能模 块,以完成以上描述的全部或者部分功能。另外,上述实施例提供的限流保护装置与限流保护方法实施例属于同一构思,其体现实现过程详见方法实施例,这里不再赘述。It should be noted that when the current-limiting protection device provided in the above-mentioned embodiment executes the current-limiting protection method, only the division of the above-mentioned functional modules is used as an example for illustration. Module completion means dividing the internal structure of the device into different functional modules to complete all or part of the functions described above. In addition, the current limiting protection device and the current limiting protection method embodiments provided by the above embodiments belong to the same concept, and the embodiment and implementation process thereof are detailed in the method embodiments, which will not be repeated here.
上述本申请实施例序号仅仅为了描述,不代表实施例的优劣。The above-mentioned serial numbers of the embodiments of the present application are only for description, and do not represent the advantages or disadvantages of the embodiments.
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程,是可以通过计算机程序来指令相关的硬件来完成,所述的程序可存储于一计算机可读取存储介质中,该程序在执行时,可包括如上述各方法的实施例的流程。其中,所述的存储介质可为磁碟、光盘、只读存储记忆体或随机存储记忆体等。Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be implemented by instructing relevant hardware through a computer program, and the program can be stored in a computer-readable storage medium. During execution, the processes of the embodiments of the above-mentioned methods may be included. Wherein, the storage medium can be a magnetic disk, an optical disk, a read-only storage memory, or a random storage memory, and the like.
以上所揭露的仅为本申请较佳实施例而已,当然不能以此来限定本申请之权利范围,因此依本申请权利要求所作的等同变化,仍属本申请所涵盖的范围。The above disclosures are only the preferred embodiments of the present application, and of course, the scope of the rights of the present application cannot be limited by this. Therefore, equivalent changes made according to the claims of the present application are still within the scope of the present application.

Claims (10)

  1. 一种传感器保护电路,其特征在于,包括:电源、第一光电传感器、接收输出电路、限流保护电路和控制器;A sensor protection circuit, characterized by comprising: a power supply, a first photoelectric sensor, a receiving output circuit, a current limiting protection circuit and a controller;
    所述电源的第一端与所述第一光电传感器的阴极相连,所述控制器的第一端与所述限流保护电路相连,所述控制器的第二端与所述接收输出电路相连,所述控制器的第三端与所述电源的第二端相连,所述第一光电传感器的阳极与所述接收输出电路相连,所述限流保护电路与所述第一光电传感器的阳极相连;The first end of the power supply is connected to the cathode of the first photoelectric sensor, the first end of the controller is connected to the current limiting protection circuit, and the second end of the controller is connected to the receiving output circuit , the third end of the controller is connected to the second end of the power supply, the anode of the first photoelectric sensor is connected to the receiving output circuit, and the current limiting protection circuit is connected to the anode of the first photoelectric sensor connected;
    所述电源,用于为所述第一光电传感器提供正偏压信号;the power supply for providing a positive bias signal for the first photoelectric sensor;
    所述接收输出电路,用于接收所述第一光电传感器采集的第一回波信号,以及将所述第一回波信号发送给所述控制器;The receiving and outputting circuit is configured to receive the first echo signal collected by the first photoelectric sensor, and send the first echo signal to the controller;
    所述控制器,用于接收所述第一回波信号后解析得到信号特征值,以及基于所述信号特征值输出初始电压信号;the controller, configured to analyze and obtain a signal characteristic value after receiving the first echo signal, and output an initial voltage signal based on the signal characteristic value;
    所述限流保护电路,用于接收所述初始电压信号后进行放大处理得到负偏压信号,以及将所述负偏压信号加载到所述第一光电传感器的阳极,以降低所述第一光电传感器的电流值。The current limiting protection circuit is used for amplifying the initial voltage signal to obtain a negative bias signal, and loading the negative bias signal to the anode of the first photoelectric sensor to reduce the first The current value of the photoelectric sensor.
  2. 根据权利要求1所述传感器保护电路,其特征在于,还包括:第二光电传感器;所述第二光电传感器上设置有遮光元件;The sensor protection circuit according to claim 1, further comprising: a second photoelectric sensor; a light shielding element is provided on the second photoelectric sensor;
    所述电源的第三端与所述第二光电传感器的阴极相连,所述第二光电传感器的阳极分别与所述限流保护电路、所述第一光电传感器的阳极相连;The third end of the power supply is connected to the cathode of the second photoelectric sensor, and the anode of the second photoelectric sensor is respectively connected to the current limiting protection circuit and the anode of the first photoelectric sensor;
    所述接收输出电路,还用于接收所述第二光电传感器采集的第二回波信号,对第一回波信号和第二回波信号进行处理得到差分电压信号,以及将所述差分电压信号发送给所述控制器。The receiving and outputting circuit is further configured to receive the second echo signal collected by the second photoelectric sensor, process the first echo signal and the second echo signal to obtain a differential voltage signal, and convert the differential voltage signal sent to the controller.
  3. 根据权利要求1所述传感器保护电路,其特征在于,所述限流保护电路包括:高压放大器、第一电阻和第一电容;The sensor protection circuit according to claim 1, wherein the current limiting protection circuit comprises: a high-voltage amplifier, a first resistor and a first capacitor;
    所述控制器的第二端与所述高压放大器的同相输入端相连,所述高压放大 器的反相输入端与所述接收输出端相连,所述高压放大器的输出端与所述第一电阻的第一端相连,所述第一电阻的第一端与所述第一电容的第一端相连,所述第一电阻的第二端与所述第一电容的第二端相连。The second terminal of the controller is connected to the non-inverting input terminal of the high-voltage amplifier, the inverting input terminal of the high-voltage amplifier is connected to the receiving output terminal, and the output terminal of the high-voltage amplifier is connected to the output terminal of the first resistor. The first end is connected, the first end of the first resistor is connected to the first end of the first capacitor, and the second end of the first resistor is connected to the second end of the first capacitor.
  4. 根据权利要求3所述传感器保护电路,其特征在于,所述限流保护电路还包括:数模转换器;The sensor protection circuit according to claim 3, wherein the current limiting protection circuit further comprises: a digital-to-analog converter;
    所述数模转换器的输入端与所述控制器的第二端相连,所述数模转换器的输出端与所述高压放大器的同相输入端相连;The input end of the digital-to-analog converter is connected to the second end of the controller, and the output end of the digital-to-analog converter is connected to the non-inverting input end of the high-voltage amplifier;
    所述数模转换器,用于接收所述控制器的初始电压信号后进行数模转换,得到转换电压信号,以及将转换电压信号输出给所述高压放大器。The digital-to-analog converter is configured to perform digital-to-analog conversion after receiving the initial voltage signal of the controller to obtain a converted voltage signal, and output the converted voltage signal to the high-voltage amplifier.
  5. 根据权利要求2所述传感器保护电路,其特征在于,所述接收输出电路包括:变压器和处理电路;其中,处理电路包括跨阻放大电器和放大调理电路,所述变压器包括原边线圈和副边线圈;The sensor protection circuit according to claim 2, wherein the receiving and outputting circuit comprises: a transformer and a processing circuit; wherein, the processing circuit comprises a transimpedance amplifier and an amplifier conditioning circuit, and the transformer comprises a primary side coil and a secondary side coil;
    所述变压器的原边线圈分别与所述第一光电传感器的阳极、所述第二光电传感器的阳极相连,所述变压器的副边线圈与所述跨阻放大器连接,所述放大调理电路连接所述跨阻放大器;The primary coil of the transformer is respectively connected to the anode of the first photoelectric sensor and the anode of the second photoelectric sensor, the secondary coil of the transformer is connected to the transimpedance amplifier, and the amplification conditioning circuit is connected to the The transimpedance amplifier;
    所述变压器,用于接收所述第一回波信号和所述第二回波信号后进行处理,得到差分电流信号,以及将所述差分电流信号传输给所述跨阻放大器;the transformer, configured to process the first echo signal and the second echo signal to obtain a differential current signal, and transmit the differential current signal to the transimpedance amplifier;
    所述跨阻放大器,用于将所述差分电流信号经过电流电压转换为待处理差分电压信号,以及将所述待处理差分电压信号输出给所述放大调理电路;The transimpedance amplifier is used to convert the differential current signal into a differential voltage signal to be processed through a current and voltage, and output the differential voltage signal to be processed to the amplifying and conditioning circuit;
    所述放大调理电路,用于将所述待处理差分电压信号进行放大和调理处理后,得到差分电压信号,以及将所述差分电压信号输出给所述控制器。The amplification and conditioning circuit is used for amplifying and conditioning the differential voltage signal to be processed to obtain a differential voltage signal, and outputting the differential voltage signal to the controller.
  6. 根据权利要求5所述限流保护电路,其特征在于,所述接收输出电路包括模数转换器;The current-limiting protection circuit according to claim 5, wherein the receiving and outputting circuit comprises an analog-to-digital converter;
    所述模数转换器与所述放大调理电路相连,用于将来自所述放大调理电路的差分电压信号进行模数转换后得到数字电压信号,以及将所述数字电压信号传输给所述控制器。The analog-to-digital converter is connected to the amplifying and conditioning circuit, and is used for performing analog-to-digital conversion on the differential voltage signal from the amplifying and conditioning circuit to obtain a digital voltage signal, and transmitting the digital voltage signal to the controller .
  7. 一种限流保护方法,其特征在于,所述限流保护方法应用于权利要求1所述的限流保护电路;A current-limiting protection method, wherein the current-limiting protection method is applied to the current-limiting protection circuit of claim 1;
    其中,所述方法包括:Wherein, the method includes:
    向所述限流保护电路输出驱动电压信号;outputting a driving voltage signal to the current limiting protection circuit;
    接收来自所述接收输出电路的第一回波信号,解析所述第一回波信号得到信号特征值;其中,所述第一回波信号由所述接收输出电路通过所述第一光电传感器获取的;Receive the first echo signal from the receiving output circuit, analyze the first echo signal to obtain a signal characteristic value; wherein, the first echo signal is obtained by the receiving output circuit through the first photoelectric sensor of;
    基于所述信号特征值,向所述限流保护电路输出所述初始电压信号;其中,所述初始电压信号用于指示所述限流保护电路输出负偏压信号并加载到所述第一光电传感器的阳极,以降低所述第一光电传感器的电流值。Based on the signal characteristic value, output the initial voltage signal to the current limiting protection circuit; wherein, the initial voltage signal is used to instruct the current limiting protection circuit to output a negative bias signal and load it into the first photoelectric the anode of the sensor to reduce the current value of the first photosensor.
  8. 一种限流保护装置,其特征在于,所述限流保护装置应用于如权利要求7所述的限流保护方法,所述限流保护装置包括:A current-limiting protection device, characterized in that, the current-limiting protection device is applied to the current-limiting protection method according to claim 7, and the current-limiting protection device comprises:
    输出模块,向所述限流保护电路输出驱动电压信号;an output module, which outputs a driving voltage signal to the current limiting protection circuit;
    接收模块,接收来自所述接收输出电路的第一回波信号,解析所述第一回波信号得到信号特征值;其中,所述第一回波信号由所述接收输出电路通过所述第一光电传感器获取的;a receiving module, receiving the first echo signal from the receiving output circuit, and analyzing the first echo signal to obtain a signal characteristic value; wherein, the first echo signal is passed by the receiving output circuit through the first echo signal Obtained by photoelectric sensor;
    比较模块,基于所述信号特征值,向所述限流保护电路输出所述初始电压信号;其中,所述初始电压信号用于指示所述限流保护电路输出负偏压信号并加载到所述第一光电传感器的阳极,以降低所述第一光电传感器的电流值。a comparison module, outputting the initial voltage signal to the current-limiting protection circuit based on the signal characteristic value; wherein the initial voltage signal is used to instruct the current-limiting protection circuit to output a negative bias signal and load it into the current-limiting protection circuit the anode of the first photosensor to reduce the current value of the first photosensor.
  9. 一种计算机存储介质,其特征在于,所述计算机存储介质存储有多条指令,所述指令适于由处理器加载并执行如权利要求1~7任意一项的方法步骤。A computer storage medium, characterized in that the computer storage medium stores a plurality of instructions, and the instructions are suitable for being loaded by a processor and executing the method steps of any one of claims 1-7.
  10. 一种激光雷达,其特征在于,包括如权利要求1-7任意一项所述的限流保护电路。A lidar, characterized by comprising the current limiting protection circuit according to any one of claims 1-7.
PCT/CN2020/136617 2020-12-15 2020-12-15 Current limiting protection circuit, current limiting protection method, and device WO2022126394A1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115833556A (en) * 2023-02-14 2023-03-21 珠海智融科技股份有限公司 Current-limiting calibration method and circuit for power converter chip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070131847A1 (en) * 2004-10-25 2007-06-14 Jianguo Yao Optical detector
CN108663672A (en) * 2017-03-27 2018-10-16 亚德诺半导体集团 High dynamic range AFE(analog front end) receiver for long range laser radar
US20200366381A1 (en) * 2017-07-11 2020-11-19 Fnv Ip B.V. Sensor front end

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070131847A1 (en) * 2004-10-25 2007-06-14 Jianguo Yao Optical detector
CN108663672A (en) * 2017-03-27 2018-10-16 亚德诺半导体集团 High dynamic range AFE(analog front end) receiver for long range laser radar
US20200366381A1 (en) * 2017-07-11 2020-11-19 Fnv Ip B.V. Sensor front end

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115833556A (en) * 2023-02-14 2023-03-21 珠海智融科技股份有限公司 Current-limiting calibration method and circuit for power converter chip

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