CN114946041A - Current-limiting protection circuit, current-limiting protection method and device - Google Patents
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Abstract
The embodiment of the application discloses a current-limiting protection circuit, a current-limiting protection method and a device, comprising: the device comprises a power supply, a first photoelectric sensor, a receiving output circuit, a current-limiting protection circuit and a controller; the current-limiting protection circuit is used for receiving the initial voltage signal, then carrying out amplification processing to obtain a negative bias signal, and loading the negative bias signal to the anode of the first photoelectric sensor so as to reduce the current value of the first photoelectric sensor. By adopting the embodiment of the application, the working current of the photoelectric sensor can be limited, so that the photoelectric sensor is prevented from working abnormally or even being damaged due to overlarge working current, and the working reliability of the photoelectric sensor under the condition of receiving high reflection energy is remarkably improved.
Description
The present disclosure relates to the field of electronic circuits, and in particular, to a current limiting protection circuit, a current limiting protection method, and a current limiting protection device.
The single photon array sensor is composed of a plurality of single photon avalanche diodes, has gain of more than 106 times, can detect optical signals with very low power, and is suitable for being applied to laser ranging radars. In the process of using the single-photon array sensor to measure the distance, when the reflected energy is higher, the single-photon array sensor frequently excites the micro unit to work, the current change amplitude is larger, and the inside of the single-photon array sensor generates heat abnormally, so that the single-photon array sensor is damaged due to abnormal work, and the laser radar fails to measure the distance.
In view of the above, it is urgently needed to provide a working circuit containing a single photon array sensor to solve the above-mentioned problems occurring when the single photon array sensor works. The possibility of ranging by the laser ranging radar in the case of receiving high reflected energy is achieved.
Disclosure of Invention
The embodiment of the application provides a current-limiting protection circuit, a current-limiting protection method and a current-limiting protection device, which can limit the working current of a photoelectric sensor, so that abnormal work and even damage of the photoelectric sensor caused by overlarge working current are prevented, and the working reliability of the photoelectric sensor under the condition of receiving high reflection energy is obviously improved. The technical scheme is as follows:
in a first aspect, the present application provides a current limiting protection circuit, including: the device comprises a power supply, a first photoelectric sensor, a receiving output circuit, a current-limiting protection circuit and a controller;
the first end of the power supply is connected with the cathode of the first photoelectric sensor, the first end of the controller is connected with the current-limiting protection circuit, the second end of the controller is connected with the receiving output circuit, the third end of the controller is connected with the second end of the power supply, the anode of the first photoelectric sensor is connected with the receiving output circuit, and the current-limiting protection circuit is connected with the anode of the first photoelectric sensor;
the power supply is used for providing a positive bias signal for the first photoelectric sensor;
the receiving output circuit is used for receiving a first echo signal collected by the first photoelectric sensor and sending the first echo signal to the controller;
the controller is used for receiving the first echo signal, analyzing the first echo signal to obtain a signal characteristic value, and outputting an initial voltage signal based on the signal characteristic value;
the current-limiting protection circuit is used for receiving the initial voltage signal, then carrying out amplification processing to obtain a negative bias signal, and loading the negative bias signal to the anode of the first photoelectric sensor so as to reduce the current value of the first photoelectric sensor.
In a second aspect, the present application provides a current limiting protection method, which is applied to the current limiting protection circuit of the first aspect;
wherein the method comprises the following steps:
outputting a driving voltage signal to the current-limiting protection circuit;
receiving a first echo signal from the receiving output circuit, and analyzing the first echo signal to obtain a signal characteristic value; wherein the first echo signal is obtained by the receiving output circuit through the first photoelectric sensor;
outputting the initial voltage signal to the current limiting protection circuit based on the signal characteristic value; the initial voltage signal is used for indicating the current-limiting protection circuit to output a negative bias signal and load the negative bias signal to the anode of the first photoelectric sensor so as to reduce the current value of the first photoelectric sensor.
In a third aspect, the present application provides a current limiting protection device, which is applied to the current limiting protection method according to the second aspect, and the current limiting protection device includes:
the output module outputs a driving voltage signal to the current-limiting protection circuit;
the receiving module is used for receiving a first echo signal from the receiving output circuit and analyzing the first echo signal to obtain a signal characteristic value; wherein the first echo signal is obtained by the receiving output circuit through the first photosensor;
the comparison module outputs the initial voltage signal to the current-limiting protection circuit based on the signal characteristic value; the initial voltage signal is used for indicating the current-limiting protection circuit to output a negative bias signal and load the negative bias signal to the anode of the first photoelectric sensor so as to reduce the current value of the first photoelectric sensor.
In a fourth aspect, the present application proposes a computer storage medium storing a plurality of instructions adapted to be loaded by a processor and to perform the method steps according to the third aspect.
In a fifth aspect, the present application provides a lidar comprising the current limiting protection circuit according to the first aspect.
The beneficial effects brought by the technical scheme provided by some embodiments of the application at least comprise: the current-limiting protection circuit can limit the working current of the photoelectric sensor, so that the phenomenon that the photoelectric sensor is abnormally operated or even damaged due to internal heating of the photoelectric sensor caused by overlarge working current is prevented; the working reliability of the photoelectric sensor under the condition of receiving high reflection energy is obviously improved, and the distance measuring capability of the photoelectric sensor is improved.
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a connection schematic diagram of a current-limiting protection circuit according to an embodiment of the present disclosure;
fig. 2 is a schematic connection diagram of another current-limiting protection circuit provided in an embodiment of the present application;
FIG. 3 is a schematic diagram of another embodiment of a current-limiting protection circuit;
fig. 4 is a schematic flowchart of a current limiting protection method according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of a current limiting protection device according to an embodiment of the present disclosure.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the present application, it is noted that, unless explicitly stated or limited otherwise, "including" and "having" and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art. Further, in the description of the present application, unless otherwise specified, "a plurality" is
Refers to two or more. "and/or" describes the association relationship of the associated object, indicating that there may be three relationships, for example, a and/or B, which may indicate: a exists alone, A and B exist simultaneously, and B exists alone. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
The present application will be described in detail with reference to specific examples.
As shown in fig. 1, a connection schematic diagram of a current limiting protection circuit provided in an embodiment of the present application includes: a power supply 101, a first photosensor L1, a reception output circuit 103, a current limiting protection circuit 104, and a controller 102; the first end of the power supply 101 is connected with the cathode of the first photoelectric sensor L1, the first end of the controller 102 is connected with the current-limiting protection circuit 104, the second end of the controller 102 is connected with the receiving output circuit 103, the third end of the controller 102 is connected with the second end of the power supply 101, the anode of the first photoelectric sensor L1 is connected with the receiving output circuit 104, and the current-limiting protection circuit 103 is connected with the anode of the first photoelectric sensor L1.
The first photosensor L1, which is referred to herein as a single photon array sensor, can be understood as a single photon avalanche photodiode used in laser communication, which utilizes the avalanche multiplication effect of carriers to amplify the photoelectric signal to improve the sensitivity of detection. For example, the model number of the first photosensor L1 includes, but is not limited to, C30659-900-R5BH, C30659-1550-R08BH, C30919E, and the like. Taking a highly sensitive SiPM (silicon photomultiplier), which is composed of a plurality of microcells each composed of a Single Photon Avalanche Diode (SPAD) and a quenching resistor in parallel, as an example of the first photosensor L1. When a reverse bias voltage (several tens of volts) is applied to a silicon photomultiplier (a reverse bias voltage generated under the combined action of a positive bias signal and a negative bias signal), the SPAD depletion layer of each microcell has an electric field with very high intensity, and at the moment, if photons are irradiated from the outside, Compton scattering can be generated with electron-hole pairs in the SPAD semiconductor to generate electrons or holes, the high-energy electrons and holes are accelerated in the electric field immediately to excite a large number of secondary electrons and holes, namely, an avalanche effect occurs, at the moment, the current output by each microcell is suddenly increased, the voltage on a quenching resistor is also increased, the electric field in the SPAD is instantly decreased, namely, the avalanche stops after the SPAD outputs an instantaneous current pulse, so that the SiPM array can be used as a photoelectric sensor to convert an optical signal into a current signal.
In other words, a laser signal emitted by the laser radar is reflected on the target object to form a laser echo signal, the first photosensor L1 receives the laser echo signal, and when the bias voltage formed by the power supply 101 and the current limiting protection circuit 104 is greater than the breakdown voltage, the laser echo signal is converted into a first current signal, and the first current signal is sent to the receiving and outputting circuit 103 to be processed to obtain the first echo signal.
The power source 101 may be understood as a component that controls the application of a positive bias signal to the cathode of the first photosensor L1 based on a predetermined rule. Preferably, the power supply 101 used in the present application is a high voltage pulse power supply, and may be understood as a high voltage power supply in which a switching circuit is added on the basis of a high voltage dc power supply, so that the output pulse amplitude is adjustable, the pulse width is adjustable, the pulse frequency is adjustable, and the number of pulse outputs is settable.
The controller 102 may be implemented by an FPGA (field programmable gate array) or an ASIC (Application Specific Integrated Circuit). The field programmable gate array is a program-driven logic device, such as a microprocessor, and the control program is stored in a memory, and after power is applied, the program is automatically loaded to a chip for execution. A field programmable gate array is generally made up of 2 programmable modules and a memory SRAM. The CLB is a programmable logic block, is a core component of a field programmable gate array, is a basic unit for realizing logic functions, and mainly comprises a logic function generator, a trigger, a data selector and other digital logic circuits. In the ASIC chip technology, all interface modules (including a control module) are connected to a matrix type backboard, and communication among a plurality of modules can be carried out simultaneously through direct forwarding from the ASIC chip to the ASIC chip; the buffer of each module only processes the input/output queue of the module, so the requirement on the performance of the memory chip is greatly lower than that of a shared memory mode. In short, the switching matrix has the characteristics of high access efficiency, suitability for simultaneous multi-point access, easy provision of very high bandwidth, convenient performance expansion, and no easy limitation of CPU, bus and memory technology.
In the embodiment of the present application, the controller 102 is configured to receive the first echo signal from the output circuit 103, analyze the first echo signal to obtain a signal characteristic value, and output an initial voltage signal to the current limiting protection circuit 104 based on the signal characteristic value. The signal characteristic value may be a current value or a voltage value of the first echo signal, for example, the first echo signal is analyzed to obtain a voltage value, and when the voltage value is greater than a voltage threshold, the initial voltage signal is output to the current limiting protection circuit 104.
The receiving output circuit 103 is understood to be a circuit that receives the first current signal of the first photosensor L1, performs noise reduction, amplification, and other processing on the current signal to obtain a first echo signal, and sends the first echo signal to the controller 102.
In one embodiment, the receive output circuit 103 includes: a transimpedance amplifying circuit and a processing circuit; the transimpedance amplification circuit is connected with the first photoelectric sensor L1 and used for converting the first current signal into a first voltage signal and carrying out amplification processing to obtain an amplified voltage signal; and the processing circuit is connected with the transimpedance amplification circuit and is used for receiving the amplified voltage signal and sending a first echo signal obtained after the voltage signal passes through the analog-to-digital converter to the controller 102. It can be understood that the first photosensor L1 generates a first current signal according to the laser echo signal, which has a small current value, and therefore needs to be converted into a first voltage signal by a transimpedance amplifier circuit, and then amplified and shaped, so as to facilitate signal processing by a processing circuit.
The current limiting protection circuit 104 may be understood as a protection circuit for amplifying the initial voltage signal based on a preset operation rule to obtain a negative bias signal, and applying the negative bias signal to the anode of the first photosensor L1 to reduce the current value of the first photosensor L1.
For example, the current limiting protection circuit of the present application operates as follows: the first photosensor L1 is composed of SiPM (silicon photomultiplier) with high sensitivity, an avalanche effect occurs when photons are received, the current output by each microcell in the first photosensor L1 suddenly becomes large, the current value and the number of photons are in a linear positive correlation, and the photoelectric amplification capability (i.e., Gain) is in a positive correlation with the Bias Voltage (Bias Voltage); at time T1, the controller 102 outputs the driving voltage signal V to the current limiting protection circuit 104 1 The current limiting protection circuit 104 receives the driving voltage signal V 1 Then amplifying to obtain negative bias signal V m And is loaded on the anode of the first photosensor L1; the first photosensor L1 outputs the current value I of the first current signal a The receiving and outputting circuit 103 receives the first current signal and processes the first current signal to obtain a first echo signal with a voltage value V L And applying the first echo signal V L To the controller 102; the controller 102 receives the first echo signal V L Analysis of the voltage value V L As a signal characteristic value, with a voltage threshold value V 0 Comparing; when the voltage value V of the first echo signal L Voltage threshold V 0 The controller 102 outputs an initial voltage signal V to the current-limiting protection circuit 104 2 Wherein the voltage value V of the initial voltage signal 2 Voltage value V of driving voltage signal 1 (ii) a The current-limiting protection circuit 104 receives an initial voltage signal V 2 Then amplifying to obtain negative bias signal V n And is applied to the anode of the first photosensor L1 due to the positive bias signal V applied to the first photosensor L1 by the power supply 101 d Without change, the bias voltage of the first photosensor L1 decreases, the photoelectric amplification capability decreases (i.e., the gain decreases), and the current I of the first photosensor L1 decreases a Becomes small.
The beneficial effects brought by the technical scheme provided by some embodiments of the application at least comprise: the current-limiting protection circuit can limit the working current of the photoelectric sensor, so that the phenomenon that the photoelectric sensor is abnormally operated or even damaged due to internal heating of the photoelectric sensor caused by overlarge working current is prevented; the reliability of the photoelectric sensor in the situation of receiving high reflection energy, for example, the reliability in the situation of high object reflectivity or very close object distance, is remarkably improved, and the distance measuring capability of the photoelectric sensor is improved.
As shown in fig. 2, another connection schematic diagram of a current limiting protection circuit provided in the embodiment of the present application includes: the protection circuit comprises a power supply 101, a first photosensor L1, a second photosensor L2, a first capacitor C1, a second capacitor C2, a processing circuit 202, a transformer 201, a current limiting protection circuit 104 and a controller 102; the transformer 201 includes a primary winding and a secondary winding.
The first end of the controller 102 is connected to the first end of the power supply 101, the second end of the power supply 101 is connected to the cathode of the first photosensor L1, the third end of the power supply 101 is connected to the cathode of the second photosensor L2, the anode of the first photosensor L1 is connected to the first end of the first capacitor C1, the second end of the first capacitor C1 is grounded, the anode of the first photosensor L1 is connected to the primary winding of the transformer 201, the anode of the second photosensor L2 is connected to the first end of the second capacitor C2, the second end of the second capacitor C2 is grounded, the anode of the second photosensor L2 is connected to the primary winding of the transformer 201, the second end of the controller 102 is connected to the current-limiting protection circuit 104, the current-limiting protection circuit 104 is connected to the primary winding of the transformer 201, the secondary winding of the transformer 201 is connected to the processing circuit 202, and the processing circuit 202 is connected to the third end of the controller 102.
The second photo sensor L2, which is referred to as a single photon array sensor in this application, can be understood as an avalanche photodiode used in laser communication, which utilizes the avalanche multiplication effect of carriers to amplify the photo-electric signal to improve the sensitivity of detection.
In the embodiment of the present application, the first photosensor L1 and the second photosensor L2 are further provided with a decoupling circuit including a first capacitor C1 and a second capacitor C2. A first terminal of the first capacitor C1 is connected to the anode of the first photosensor L1, a second terminal of the first capacitor C1 is connected to ground (e.g., the housing), a first terminal of the second capacitor C2 is connected to the anode of the second photosensor L2, a second terminal of the second capacitor C2 is connected to ground (e.g., the housing), and the first capacitor C1 and the second capacitor C2 serve as decoupling capacitors for removing power noise and stabilizing a bias voltage.
In the embodiment of the present application, the second photosensor L2 is provided with a light shielding member, which is used for shielding the second photosensor L2, and may be, but not limited to, a light shielding plate, a light shielding cover, a light shielding cloth, or the like. It will be appreciated that in the absence of illumination, the second photosensor L2 will likewise output a second current signal when the applied bias voltage is greater than the breakdown voltage.
The following explains the operation principle of the second photosensor L2 in the embodiment of the present application. The current signal caused by the laser echo signal at the first photosensor L1 is referred to as a photocurrent signal, and the current signal caused by the bias voltage supplied from the power supply is referred to as a bias current signal. Therefore, the first current signal output from the first photosensor L1 may include only the bias current signal at most of the time, and at the time when the laser echo signal reaches the first photosensor L1, the first current signal includes the photocurrent signal and the bias current signal. Meanwhile, the photocurrent signal is weak compared to the bias current signal, so it is difficult for the processing circuit 202, and thus the controller 102, to detect the photocurrent signal.
Since the second photosensor L2 is connected in parallel with the first photosensor L1 and the same bias voltage is supplied from the same power supply 101 and controller 102, the bias voltage of the second photosensor L2 is equal to the bias voltage of the first photosensor L1, i.e., the bias current signals of the second photosensor L2 and the first photosensor L1 are the same. Meanwhile, since the second photosensor L2 is in a light-shielding state, the second current signal output by the second photosensor L2 is a bias current signal at any time. Therefore, the transformer 201 receives the first echo signal of the first photosensor L1 and the second echo signal of the second photosensor L2, performs a difference process, and removes a current value belonging to the second echo signal from the first echo signal to obtain a difference current signal. The differential current signal obtained by the processing circuit 202 is only a photocurrent component. Therefore, the differential current signal obtained by the processing circuit 202 is a photocurrent signal at the time when the laser echo signal reaches the first photosensor L1, and the differential current signal should be 0 except at the time when the laser echo signal reaches the first photosensor L1.
The beneficial effects brought by the technical scheme provided by some embodiments of the application at least comprise: therefore, the processing circuit 202 and even the controller 102 can sensitively detect the photocurrent signal, and the time when the differential current signal obtained by the processing circuit 202 is not 0 is detected is taken as the time when the laser echo signal reaches the first photosensor L1; the sensitivity and the accuracy of detecting the laser echo signals are improved, and the accuracy of distance measurement is improved.
The transformer 201 may be understood as a component that receives the first echo signal of the first photosensor L1 and the second echo signal of the second photosensor L2, performs a differential processing to obtain a differential current signal, and amplifies a voltage value of the differential current signal by using the principle of electromagnetic induction. Preferably, a balun transformer, i.e. a balun transformer with balanced-to-unbalanced, impedance transformation, for twisted pair lines is used in the present application.
The processing circuit 202 may be understood as a circuit that collects the differential current signal through the transformer 201, processes the differential current signal to obtain a differential voltage signal, and transmits the differential voltage signal to the controller 101.
It should be noted that there are at least two ways to implement the receiving and outputting circuit 103: one is to perform differential processing on the first echo signal and the second echo signal on the first photosensor L1 and the second photosensor L2, and then perform transimpedance amplification, that is, the implementation manner provided in the embodiment of the present application; the other is to perform transimpedance amplification on the first echo signal and the second echo signal, and then perform differential processing on the first echo signal and the second echo signal, which is the second implementation manner. Since the second embodiment limits the effective dynamic range of the signal link and increases power consumption and cost, the present invention adopts the first embodiment to implement the receiving and outputting circuit 103.
The beneficial effects brought by the technical scheme provided by some embodiments of the application at least comprise: in the embodiment, a balun transformer with low insertion loss and high symmetry can be selected, namely, the balun transformer with small signal attenuation and good cancellation processing performance can be selected, so that a photocurrent signal range close to the output of a single photoelectric sensor can be obtained; the thermal noise of the matching resistor RT is mainly increased, the noise is far smaller than the current noise of the transimpedance amplification circuit (the noise exists in transimpedance amplification processing), and the influence on the signal-to-noise ratio of the photocurrent signal is basically negligible; only extremely small thermal noise is added, the photocurrent signal is not basically weakened, the influence on the signal-to-noise ratio is small, and the amplification capacity of the photocurrent signal of the circuit is hardly reduced.
In another embodiment, the implementation of the receive output circuit 103 may be: the first echo signal and the second echo signal output by the first photoelectric sensor L1 and the second photoelectric sensor L2 are respectively input to a transimpedance amplifier for primary amplification, the amplified first echo signal and the amplified second echo signal are output, the amplified first echo signal and the amplified second echo signal are input to a subtractor, a differential voltage signal is output, and then the differential voltage signal is subjected to secondary amplification.
The current-limiting protection circuit 104 may be understood as a protection circuit for amplifying the initial voltage signal based on a preset operation rule to obtain a negative bias signal, and applying the negative bias signal to the anode of the first photosensor L1 to reduce the current value of the first photosensor L1.
For example, the current limiting protection circuit of the present application operates as follows: the first photosensor L1 is composed of SiPM (silicon photomultiplier) with high sensitivity, an avalanche effect occurs when photons are received, the current output by each microcell in the first photosensor L1 suddenly becomes large, the current value and the number of photons are in a linear positive correlation, and the photoelectric amplification capability (i.e., Gain) is in a positive correlation with the Bias Voltage (Bias Voltage); at time T1, the controller 101 outputs a driving voltage signal V to the current limiting protection circuit 104 1 The current limiting protection circuit 104 receives the driving voltage signal V 1 Then amplifying to obtain negative bias signal V m And loaded on the anodes of the first photosensor L1 and the second photosensor L2; the first photosensor L1 outputs a first echo signal I a The second photoelectric sensor L2 outputs a second echo signal I under the action of the bias voltage b (ii) a The processing circuit 202 receives the differential current signal I via the transformer 201 c Wherein, I c ＝I a －I b Differential current signal I c Converting the voltage signal into a voltage signal and amplifying the voltage signal to obtain a differential voltage signal V c Differential voltage signal V c Output to the controller 102; the controller 102 receives the differential voltage signal V c And a voltage threshold V 0 Comparing and differentiating the voltage value V of the voltage signal c Voltage threshold V 0 The controller 101 outputs an initial voltage signal V to the current-limiting protection circuit 104 2 Wherein the initial voltage signal V 2 Drive voltage signal V 1 (ii) a The current limiting protection circuit 104 receives an initial voltage signal V 2 Then amplifying to obtain a negative bias signal V n And is applied to the anodes of the first and second photosensors L1 and L2, respectively, due to the positive bias signal V applied to the first photosensor L1 from the power supply 101 d Without change, the bias voltage of the first photosensor L1 decreases, the photoelectric amplification capability decreases (i.e., the gain decreases), and the current I of the first photosensor L1 decreases a Becomes small.
The beneficial effects brought by the technical scheme provided by some embodiments of the application at least comprise: the current-limiting protection circuit can limit the working current of the photoelectric sensor, so that the internal heating of the photoelectric sensor caused by overlarge working current is prevented, and the photoelectric sensor is prevented from working abnormally and even damaged; the working reliability of the photoelectric sensor under the condition of receiving high reflection energy is obviously improved, and the distance measuring capability of the photoelectric sensor is improved.
As shown in fig. 3, another connection schematic diagram of a current limiting protection circuit provided in the embodiment of the present application includes: the protection circuit comprises a power supply 101, a first photosensor L1, a second photosensor L2, a first capacitor C1, a second capacitor C2, a processing circuit 202, a transformer 201, a current limiting protection circuit 104 and a controller 102; the transformer 201 includes a primary winding and a secondary winding.
The first end of the controller 102 is connected to the first end of the power supply 101, the second end of the power supply 101 is connected to the cathode of the first photosensor L1, the third end of the power supply 101 is connected to the cathode of the second photosensor L2, the anode of the first photosensor L1 is connected to the first end of the first capacitor C1, the second end of the first capacitor C1 is grounded, the anode of the first photosensor L1 is connected to the primary winding of the transformer 201, the anode of the second photosensor L2 is connected to the first end of the second capacitor C2, the second end of the second capacitor C2 is grounded, the anode of the second photosensor L2 is connected to the primary winding of the transformer 201, the second end of the controller 102 is connected to the current-limiting protection circuit 104, the current-limiting protection circuit 104 is connected to the primary winding of the transformer 201, the secondary winding of the transformer 201 is connected to the processing circuit 202, and the processing circuit 202 is connected to the third end of the controller 102.
The current limiting protection circuit 104 includes: the digital-to-analog converter 1041, the high voltage amplifier U1, the first resistor R1 and the third capacitor C3.
The inverting input terminal of the high-voltage amplifier U1 is connected to the primary winding of the transformer 103, the output terminal of the high-voltage amplifier U1 is connected to the first terminal of the first resistor R1, the first terminal of the first resistor R1 is connected to the first terminal of the third capacitor C3, the second terminal of the first resistor R1 is connected to the second terminal of the third capacitor C3, the input terminal of the digital-to-analog converter 1041 is connected to the second terminal of the controller 102, and the output terminal of the digital-to-analog converter 1041 is connected to the non-inverting input terminal of the high-voltage amplifier U1.
The reception output circuit 103 includes: transformer 201, transimpedance amplifier 301, amplification conditioning circuit 302, and analog-to-digital converter 303.
The transimpedance amplifier 301 is connected with the secondary winding of the transformer 201, the amplifying and conditioning circuit 302 is connected with the transimpedance amplifier 301, the digital-to-analog converter 303 is connected with the amplifying and conditioning circuit 302, and the second end of the controller 102 is connected with the digital-to-analog converter 303.
A digital-to-analog converter 1041(DAC, D/a converter), which can be understood as a device that converts a discrete digital signal into a continuous analog signal, is mainly composed of a digital register, an analog electronic switch, a bit weight network, a summing operational amplifier, and a reference voltage source (or constant current source). For example, the model of the digital-to-analog converter 1041 includes, but is not limited to, DAC7311IDCKR, and the like.
In the embodiment of the present application, the digital-to-analog converter 1041 is configured to receive the initial voltage signal of the controller 102, perform digital-to-analog conversion to obtain a converted voltage signal, and output the converted voltage signal to the high voltage amplifier U1.
In another embodiment, the current limiting protection circuit 104 does not include the dac 1041, and the second terminal of the controller 102 is connected to the non-inverting input terminal of the high voltage amplifier U1. In this embodiment, the initial voltage signal output by the second terminal of the controller 102 is a mode electrical signal, and can be directly received by the high voltage amplifier U1.
The high voltage amplifier U1 may be understood as a signal amplifier with high voltage amplitude output, and is configured to receive the converted voltage signal from the digital-to-analog converter 1041, perform amplification processing based on a preset operation rule to obtain a negative bias signal, and load the negative bias signal on the anode of the first photosensor L1 after being limited by the first resistor R1. For example, the voltage value of the converted voltage signal applied to the non-inverting input terminal of the high voltage amplifier U1 is 5V, and a negative bias signal of 200V is output and applied to the anode of the first photosensor L1.
In the embodiment of the application, the third capacitor C3 is connected in parallel to two ends of the first resistor R1. It should be noted that, when photons are incident, the incident photons can be effectively absorbed by a large number of single photon avalanche diodes and excite an avalanche effect, so that the large number of single photon avalanche diodes are conducted to output pulse current; then the equivalent capacitance C of two ends of the single photon avalanche diode is needed cell (because the structure of the silicon photomultiplier leads to that each single photon avalanche diode is connected with an equivalent capacitor in parallel) to be charged, so that the equivalent capacitors of the avalanche diodes are charged completely, and then the avalanche diodes are recovered to a normal bias state, and the silicon photomultiplier is difficult to effectively detect incident light and output current before the equivalent capacitors are charged; in the embodiment of the present application, the equivalent capacitance refers to a first capacitance C1 and a second capacitance C2, wherein the equivalent capacitance C is cell And a quenching resistance R q The recovery time constant of the microcell is determined, and the recovery time to 90% bias is about 2.3 times the time constant, i.e. the recovery time can be: t is a unit of recovery ＝2.3×R q ×C cell . When only the first resistor R1 is disposed in the current-limiting protection circuit 104, the first resistor R1 and the first capacitor C1 or the second capacitor C2 form an RC circuit, and when the bias voltage is greater than the breakdown voltage and the first photosensor L1 avalanche occursAfter this effect, the RC circuit will slow down the voltage change at the anode terminal of the first photosensor L1, slowing down the recovery time of the first photosensor L1.
The beneficial effects brought by the technical scheme provided by some embodiments of the application at least comprise: the third capacitor C3 is connected in parallel to two ends of the first resistor R1, so that energy can be stored when the current value output by the first photosensor L1 changes rapidly, and electric charge required by rapid voltage change at the anode end of the first photosensor L1 can be provided, thereby shortening the recovery time of the first photosensor L1.
The transimpedance amplifier 301 (TIA) may be understood to convert an input voltage signal into a current signal satisfying a certain relationship, where the converted current is an output-adjustable constant current source, and an output current of the output-adjustable constant current source should be stable and not change with a change of a load. In this embodiment, the transimpedance amplifier 301 converts the differential current signal collected by the transformer 201 into a differential voltage signal to be processed through current and voltage conversion, and outputs the differential voltage signal to the amplification and conditioning circuit 302.
The amplification conditioning circuit 302, which may be understood to amplify, buffer or scale the analog signal from the sensor to fit the input of an analog-to-digital converter (ADC) and obtain a digital signal for output to the controller to enable the controller to perform data acquisition, control processes, perform computational display readout and other purposes. In this embodiment of the application, the amplifying and conditioning circuit 302 is configured to amplify and condition the differential voltage signal to be processed to obtain a differential voltage signal, and output the differential voltage signal to the analog-to-digital converter 303.
The Analog-to-Digital Converter 303 (a/D Converter) may be understood as an electronic component for converting an Analog signal into a Digital signal, for example, the model of the Analog-to-Digital Converter 303 includes, but is not limited to, ADS822E, ADS8472 ibrgtt, and the like. In the embodiment of the present application, the analog-to-digital converter 303 is configured to perform analog-to-digital conversion on the differential voltage signal from the amplifying and conditioning circuit 302 to obtain a digital voltage signal, and transmit the digital voltage signal to the controller 102.
In another embodiment, the analog-to-digital converter 303 is not included in the receiving output circuit 103, and the third terminal of the controller 102 is connected to the amplifying and conditioning circuit 302. In this embodiment, the third terminal of the controller 102 may receive the mode electrical signal.
The description of other units in the embodiment of the present application is described with reference to fig. 2, and the working process is also described with reference to fig. 2.
The beneficial effects brought by the technical scheme provided by some embodiments of the application at least comprise: the current-limiting protection circuit can limit the working current of the photoelectric sensor, so that the phenomenon that the photoelectric sensor is heated due to overlarge working current and works abnormally or even is damaged is prevented; the working reliability of the photoelectric sensor under the condition of receiving high reflection energy is obviously improved, and the distance measuring capability of the photoelectric sensor is improved.
As shown in fig. 4, a flow diagram of the current-limiting protection method provided in the embodiment of the present Application is executed by a controller, and the controller may be implemented by an FPGA (Field-programmable gate array) or an ASIC (Application Specific Integrated Circuit). The field programmable gate array is a program-driven logic device, such as a microprocessor, and the control program is stored in a memory, and after power is applied, the program is automatically loaded to a chip for execution. A field programmable gate array is generally composed of 2 programmable modules and a memory SRAM. The CLB is a programmable logic block, is a core component of a field programmable gate array, is a basic unit for realizing logic functions, and mainly comprises a logic function generator, a trigger, a data selector and other digital logic circuits. In the ASIC chip technology, all interface modules (including a control module) are connected to a matrix type backboard, and communication among a plurality of modules can be carried out simultaneously through direct forwarding from the ASIC chip to the ASIC chip; the cache of each module only processes the input and output queues of the module, so the requirement on the performance of the memory chip is greatly lower than that of a shared memory mode. In a word, the switching matrix has the characteristics of high access efficiency, suitability for simultaneous multi-point access, easy provision of very high bandwidth, convenient performance expansion and difficulty in being limited by the technologies of a CPU, a bus and a memory.
The current-limiting protection method provided by the application comprises the following steps of:
and S401, outputting a driving voltage signal to a current-limiting protection circuit.
The controller outputs a driving voltage signal to the current-limiting protection circuit, the current-limiting protection circuit amplifies an initial voltage signal based on a preset operation rule to obtain a negative bias signal, the negative bias signal is loaded to anodes of the first photoelectric sensor and the second photoelectric sensor, and the power supply provides a positive bias signal at the cathodes of the first photoelectric sensor and the second photoelectric sensor, so that the bias voltage on the first photoelectric sensor and the second photoelectric sensor is greater than the breakdown voltage, and the first photoelectric sensor and the second photoelectric sensor work normally.
For example, the controller outputs the driving voltage signal V1 to the current-limiting protection circuit 104, and the current-limiting protection circuit 104 receives the driving voltage signal V1 and then performs amplification processing to obtain the negative bias signal V m And loaded on the anodes of the first and second photosensors; power supply output positive bias signal V d And loaded on the cathodes of the first and second photosensors; wherein, V m ＜V d Thus forming a negative bias voltage across the first and second photosensors, the bias voltage being greater than the breakdown voltage of the first photosensor; when the first photosensor receives photons, a current value is output.
S402, receiving the first echo signal from the receiving output circuit, and analyzing the first echo signal to obtain a signal characteristic value.
The receiving and outputting circuit can be understood as a circuit that collects differential current signals on the first photosensor and the second photosensor, processes the differential current signals to obtain differential voltage signals, and transmits the differential voltage signals to the controller.
In one application example, the implementation of the voltage compensation circuit may be: and respectively inputting a first echo signal and a second echo signal output by the first photoelectric sensor and the second photoelectric sensor to two ends of a balance side of the balun transformer, coupling a differential current signal obtained after differential processing to a primary side through the transformer, and then inputting the differential current signal into a transimpedance amplifier for transimpedance amplification to obtain a differential voltage signal.
For example, the first photosensor outputs a first echo signal I a The second photoelectric sensor outputs a second echo signal I under the action of the bias voltage b (ii) a The voltage compensation circuit receives a differential current signal I through a transformer c And converting the differential current signal Ic into a differential voltage signal and amplifying to obtain a differential voltage signal V, wherein Ic is Ia-Ib c Differential voltage signal V c Outputting to a controller; the controller receives the differential voltage signal V c And analyzing to obtain a voltage value of 50V as the differential voltage V c The signal characteristic value of (1).
And S403, outputting an initial voltage signal to the current limiting protection circuit based on the signal characteristic value.
For example, the controller receives a differential voltage signal V c And a voltage threshold V 0 Comparing and differentiating the voltage signals V c Voltage threshold V 0 The controller outputs an initial voltage signal V to the current-limiting protection circuit 2 Wherein the initial voltage signal V 2 Drive voltage signal V 1 (ii) a The current-limiting protection circuit receives an initial voltage signal V 2 Then amplifying to obtain negative bias signal V n And is applied to the anodes of the first and second photosensors due to the application of a power supply to the negative bias signal V of the first photosensor d Without change, the bias voltage of the first photosensor is reduced, the photoelectric amplification capability is reduced (i.e. the gain is reduced), and the first echo signal I of the first photosensor is reduced a Becomes small.
In one embodiment, the controller outputs an initial voltage signal to the current limit protection circuit, including: obtaining a voltage value based on the differential voltage signal, the voltage value being a signal characteristic value; calculating the offset of the voltage value and the voltage threshold; acquiring a voltage value of the initial voltage signal based on the offset and a PID calculation model; and outputting the initial voltage signal to a current-limiting protection circuit.
The PID calculation model is a calculation model that calculates an input value based on a PID control theory to obtain an output value. The PID control theory can be understood as a linear control theory in which a control deviation is formed from a given value and an actual output value, and the deviation is linearly combined in proportion, integral and differential to form a control quantity to control a controlled object.
For example, the controller receives a differential voltage signal V c 50V, voltage threshold V 0 Is 30V, a differential voltage signal V c And a voltage threshold V 0 The offset e of (a) is calculated by the formula:
e(t)＝V c (t)-V 0 (t)
and (3) forming a basic formula of a PID calculation model by linearly combining the proportion (P), the integral (I) and the differential (D) of the deviation e, wherein the control rule refers to the following formula:
kp is a proportionality coefficient, Ki is an integral constant, and Kd is a differential constant;
forming a basic formula of a PID calculation model based on the rule to obtain an initial voltage signal V 2 Is 60V. The following methods are used for determining the main parameters in the PID calculation model: the method comprises the steps of firstly identifying a parameter model of an object, and then calculating setting methods by using theories such as a pole allocation setting method, a cancellation principle method and the like; outputting a response characteristic parameter setting method based on the extracted object, such as a Z-N parameter setting method (also called a critical proportionality method); a parameter optimization method; an expert system method based on pattern recognition, a controller parameter online setting method based on the control behavior of the controller, and the like.
The above is only one feasible method for obtaining the voltage value of the initial voltage signal based on the voltage value of the differential voltage signal by the controller, and the calculation method of the controller is not specifically limited in the present application.
The beneficial effects brought by the technical scheme provided by some embodiments of the application at least comprise: the current-limiting protection circuit can limit the working current of the photoelectric sensor, so that the phenomenon that the photoelectric sensor is heated due to overlarge working current and works abnormally or even is damaged is prevented; the working reliability of the photoelectric sensor under the condition of receiving high reflection energy is obviously improved, and the distance measuring capability of the photoelectric sensor is improved.
The following are embodiments of the apparatus of the present application that may be used to perform embodiments of the method of the present application. For details which are not disclosed in the embodiments of the apparatus of the present application, reference is made to the embodiments of the method of the present application.
Fig. 5 is a schematic structural diagram of a current limiting protection device according to an embodiment of the present application. The current limiting protection device may be implemented as all or part of the device in software, hardware, or a combination of both. The current limiting protection device comprises an output module 501, a receiving module 502 and a comparing module 503.
An output module 501, which outputs a driving voltage signal to the current limiting protection circuit;
a receiving module 502, configured to receive a first echo signal from the receiving and outputting circuit, and analyze the first echo signal to obtain a signal characteristic value; wherein the first echo signal is obtained by the receiving output circuit through the first photoelectric sensor;
a comparing module 503, configured to output the initial voltage signal to the current limiting protection circuit based on the signal characteristic value; the initial voltage signal is used for indicating the current-limiting protection circuit to output a negative bias signal and load the negative bias signal to the anode of the first photoelectric sensor so as to reduce the current value of the first photoelectric sensor.
An embodiment of the present application further provides a computer storage medium, where the computer storage medium may store multiple instructions, and the instructions are suitable for being loaded by a processor and executing the current limiting protection method shown in fig. 4, where a specific execution process may refer to a specific description of the embodiment shown in fig. 4, and is not described herein again.
The present application further provides a computer program product, where at least one instruction is stored, and the at least one instruction is loaded by the processor and executes the current limiting protection method shown in fig. 4, where a specific execution process may refer to a specific description of the embodiment shown in fig. 4, and is not described herein again.
It should be noted that, when the current limiting protection device provided in the foregoing embodiment executes the current limiting protection method, only the division of the functional modules is illustrated, and in practical applications, the above function distribution may be completed by different functional modules according to needs, that is, the internal structure of the device is divided into different functional modules, so as to complete all or part of the above described functions. In addition, the current limiting protection device and the current limiting protection method provided by the above embodiments belong to the same concept, and the detailed implementation process is described in the method embodiments, which is not described herein again.
The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by a computer program, which can be stored in a computer-readable storage medium, and when executed, can include the processes of the embodiments of the methods described above. The storage medium can be a magnetic disk, an optical disk, a read-only memory or a random access memory.
The above disclosure is only for the purpose of illustrating the preferred embodiments of the present application and is not to be construed as limiting the scope of the present application, so that the present application is not limited thereto, and all equivalent variations and modifications can be made to the present application.
Claims (10)
- A sensor protection circuit, comprising: the device comprises a power supply, a first photoelectric sensor, a receiving output circuit, a current-limiting protection circuit and a controller;the first end of the power supply is connected with the cathode of the first photoelectric sensor, the first end of the controller is connected with the current-limiting protection circuit, the second end of the controller is connected with the receiving output circuit, the third end of the controller is connected with the second end of the power supply, the anode of the first photoelectric sensor is connected with the receiving output circuit, and the current-limiting protection circuit is connected with the anode of the first photoelectric sensor;the power supply is used for providing a positive bias signal for the first photoelectric sensor;the receiving output circuit is used for receiving a first echo signal collected by the first photoelectric sensor and sending the first echo signal to the controller;the controller is used for receiving the first echo signal, analyzing the first echo signal to obtain a signal characteristic value, and outputting an initial voltage signal based on the signal characteristic value;the current-limiting protection circuit is used for receiving the initial voltage signal, then carrying out amplification processing to obtain a negative bias signal, and loading the negative bias signal to the anode of the first photoelectric sensor so as to reduce the current value of the first photoelectric sensor.
- The sensor protection circuit of claim 1, further comprising: a second photosensor; a shading element is arranged on the second photoelectric sensor;the third end of the power supply is connected with the cathode of the second photoelectric sensor, and the anode of the second photoelectric sensor is respectively connected with the current-limiting protection circuit and the anode of the first photoelectric sensor;the receiving output circuit is further configured to receive a second echo signal acquired by the second photoelectric sensor, process the first echo signal and the second echo signal to obtain a differential voltage signal, and send the differential voltage signal to the controller.
- The sensor protection circuit of claim 1, wherein the current limiting protection circuit comprises: the high-voltage amplifier, the first resistor and the first capacitor;the second end of the controller is connected with the non-inverting input end of the high-voltage amplifier, the inverting input end of the high-voltage amplifier is connected with the receiving output end, the output end of the high-voltage amplifier is connected with the first end of the first resistor, the first end of the first resistor is connected with the first end of the first capacitor, and the second end of the first resistor is connected with the second end of the first capacitor.
- The sensor protection circuit of claim 3, wherein the current limiting protection circuit further comprises: a digital-to-analog converter;the input end of the digital-to-analog converter is connected with the second end of the controller, and the output end of the digital-to-analog converter is connected with the non-inverting input end of the high-voltage amplifier;the digital-to-analog converter is used for receiving the initial voltage signal of the controller, then performing digital-to-analog conversion to obtain a conversion voltage signal, and outputting the conversion voltage signal to the high-voltage amplifier.
- The sensor protection circuit of claim 2, wherein the receive output circuit comprises: a transformer and a processing circuit; the processing circuit comprises a transimpedance amplifying electric appliance and an amplifying conditioning circuit, and the transformer comprises a primary coil and a secondary coil;the primary coil of the transformer is respectively connected with the anode of the first photoelectric sensor and the anode of the second photoelectric sensor, the secondary coil of the transformer is connected with the transimpedance amplifier, and the amplification conditioning circuit is connected with the transimpedance amplifier;the transformer is used for receiving the first echo signal and the second echo signal, processing the first echo signal and the second echo signal to obtain a differential current signal, and transmitting the differential current signal to the transimpedance amplifier;the trans-impedance amplifier is used for converting the differential current signal into a differential voltage signal to be processed through current and voltage and outputting the differential voltage signal to be processed to the amplifying and conditioning circuit;the amplifying and conditioning circuit is used for amplifying and conditioning the differential voltage signal to be processed to obtain a differential voltage signal and outputting the differential voltage signal to the controller.
- The current-limiting protection circuit of claim 5, wherein the receive output circuit comprises an analog-to-digital converter;the analog-to-digital converter is connected with the amplifying and conditioning circuit and used for performing analog-to-digital conversion on the differential voltage signal from the amplifying and conditioning circuit to obtain a digital voltage signal and transmitting the digital voltage signal to the controller.
- A current-limiting protection method, wherein the current-limiting protection method is applied to the current-limiting protection circuit of claim 1;wherein the method comprises the following steps:outputting a driving voltage signal to the current-limiting protection circuit;receiving a first echo signal from the receiving output circuit, and analyzing the first echo signal to obtain a signal characteristic value; wherein the first echo signal is obtained by the receiving output circuit through the first photosensor;outputting the initial voltage signal to the current limiting protection circuit based on the signal characteristic value; the initial voltage signal is used for indicating the current-limiting protection circuit to output a negative bias signal and load the negative bias signal to the anode of the first photoelectric sensor so as to reduce the current value of the first photoelectric sensor.
- A current limiting protection device, wherein the current limiting protection device is applied to the current limiting protection method according to claim 7, and the current limiting protection device comprises:the output module outputs a driving voltage signal to the current-limiting protection circuit;the receiving module is used for receiving a first echo signal from the receiving output circuit and analyzing the first echo signal to obtain a signal characteristic value; wherein the first echo signal is obtained by the receiving output circuit through the first photoelectric sensor;the comparison module outputs the initial voltage signal to the current-limiting protection circuit based on the signal characteristic value; the initial voltage signal is used for indicating the current-limiting protection circuit to output a negative bias signal and load the negative bias signal to the anode of the first photoelectric sensor so as to reduce the current value of the first photoelectric sensor.
- A computer storage medium, characterized in that it stores a plurality of instructions adapted to be loaded by a processor and to carry out the method steps according to any one of claims 1 to 7.
- Lidar according to any of claims 1 to 7, characterized in that it comprises a current limiting protection circuit according to any of claims 1 to 7.
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| PCT/CN2020/136617 WO2022126394A1 (en) | 2020-12-15 | 2020-12-15 | Current limiting protection circuit, current limiting protection method, and device |
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| NL2019224B1 (en) * | 2017-07-11 | 2019-01-25 | Fugro Tech Bv | Underwater Wireless Optical Communication Unit and System |
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