WO2022121816A1 - Chemical mechanical polishing solution and use method therefor - Google Patents
Chemical mechanical polishing solution and use method therefor Download PDFInfo
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- WO2022121816A1 WO2022121816A1 PCT/CN2021/135619 CN2021135619W WO2022121816A1 WO 2022121816 A1 WO2022121816 A1 WO 2022121816A1 CN 2021135619 W CN2021135619 W CN 2021135619W WO 2022121816 A1 WO2022121816 A1 WO 2022121816A1
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- Prior art keywords
- chemical mechanical
- polishing
- mechanical polishing
- pressure
- polishing liquid
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- 238000005498 polishing Methods 0.000 title claims abstract description 113
- 239000000126 substance Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 23
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 16
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 16
- BEJNERDRQOWKJM-UHFFFAOYSA-N kojic acid Chemical compound OCC1=CC(=O)C(O)=CO1 BEJNERDRQOWKJM-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229960004705 kojic acid Drugs 0.000 claims abstract description 11
- WZNJWVWKTVETCG-UHFFFAOYSA-N kojic acid Natural products OC(=O)C(N)CN1C=CC(=O)C(O)=C1 WZNJWVWKTVETCG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims description 32
- 230000035945 sensitivity Effects 0.000 claims description 17
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 8
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 4
- 229920000858 Cyclodextrin Polymers 0.000 claims description 3
- 239000000654 additive Substances 0.000 claims description 3
- 239000003002 pH adjusting agent Substances 0.000 claims description 3
- HFHDHCJBZVLPGP-UHFFFAOYSA-N schardinger α-dextrin Chemical compound O1C(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC(C(O)C2O)C(CO)OC2OC(C(C2O)O)C(CO)OC2OC2C(O)C(O)C1OC2CO HFHDHCJBZVLPGP-UHFFFAOYSA-N 0.000 claims description 3
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- 229940081066 picolinic acid Drugs 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052684 Cerium Inorganic materials 0.000 description 4
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
Definitions
- the invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid and a method for using the same.
- the polishing rate of silicon oxide usually increases with the increase of polishing pressure, and the relationship between polishing rate and polishing pressure can be Described by the Preston equation.
- the polishing rate of TEOS is very sensitive to polishing pressure. With an increase of 0.5 psi (from 1.5 psi to 2.0 psi), the TEOS rate increased by nearly 1000 A/min. The polishing rate is sensitive to pressure, making the polishing process difficult to control. Therefore, there is a need to reduce the sensitivity of the TEOS polishing rate to pressure.
- an auto-stop method is usually used to reduce the sensitivity of the polishing rate to pressure, but the auto-stop means that the polishing rate is reduced, which usually cannot meet production requirements. Therefore, there is an urgent need in the art for a polishing liquid that can effectively reduce the sensitivity of the polishing rate to the pressure, while ensuring an appropriate polishing rate.
- the present invention provides a chemical mechanical polishing liquid, which can effectively reduce the sensitivity of the polishing rate to the pressure, while maintaining an appropriate polishing rate, and has a good application prospect in the field.
- the chemical mechanical polishing liquid contains cerium oxide abrasive particles, kojic acid and a pH adjuster.
- the concentration of the cerium oxide abrasive particles is 0.1%-0.5% by mass.
- the particle size of the cerium oxide abrasive particles is 45nm-75nm.
- the concentration of the kojic acid is 50 ppm to 2000 ppm by mass.
- the pH value of the chemical mechanical polishing solution is 3.0-6.0.
- the chemical mechanical polishing liquid contains additives, and the additives are selected from one or more of hydroxybenzoic acid, picolinic acid and cyclodextrin.
- Another aspect of the present invention provides a method for using a chemical mechanical polishing liquid, wherein any one of the chemical mechanical polishing liquids described above is used to reduce the sensitivity of the TEOS polishing rate to pressure.
- the chemical mechanical polishing solutions of Examples 1 to 12 and Comparative Examples 1 to 6 were respectively prepared, and nitric acid or potassium hydroxide was used as a pH adjuster to adjust the pH value of the polishing solution to the desired value.
- Numerical value is required.
- the light scattering particle size of ceria-1 is around 180 nm.
- the particle size of the light-scattering cerium oxide-2 is about 160 nm.
- the particle diameters of the cerium oxide particles measured by the specific surface area (BET) method are: cerium oxide-1: 60 nm, cerium oxide-2: 60 nm, and cerium oxide-3: 30 nm. In the present invention, the particle size is based on the specific surface method.
- Cerium oxide particles without surface treatment when pH ⁇ 6, the surface of cerium oxide particles are positively charged, and the zeta potential is greater than 20mV; after surface treatment, when pH ⁇ 6, the surface of cerium oxide particles has a negative charge. charge, zeta potential is less than -20mV.
- polishing liquids in Examples 1 to 12 and Comparative Examples 1 to 6 were used to perform polishing tests on TEOS blank wafers respectively, and the sensitivity of polishing rate to pressure value was measured.
- Corresponding polishing conditions include: IC1010 polishing pad, Platten and Carrier rotation speeds of 93 rpm and 87 rpm, pressure: 1.5 psi, 2 psi, 3 psi, 4 psi and 5 psi, polishing fluid flow rate of 150 mL/min, and polishing time of 60 seconds.
- the TEOS film thickness was measured with a NanoSpec film thickness measurement system (NanoSpec 6100-300, Shanghai Nanospec Technology Corporation). Starting at 3mm from the edge of the wafer, measure 49 points at equal intervals on the diameter line. The polishing rate is an average of 49 points. The corresponding measured polishing rates and calculated values are shown in Table 2.
- the slope value of the rate/pressure of Comparative Example 1 is relatively large, which means that the chemical mechanical polishing liquid of Comparative Example 1 exhibits a strong sensitivity of polishing rate to pressure.
- increasing the pressure from 1.5 psi to 2.0 psi increases the polishing rate by 928 A/min.
- the polishing rate of silicon oxide is proportional to the pressure, and the polishing rate increases by 1292.7 A/min for every 1 psi increase.
- the chemical mechanical polishing solution of Comparative Example 1 has a high polishing rate. Under the polishing pressure of 2psi, the polishing rate of silicon oxide can be greater than 2000A/min, which is close to the target polishing rate ⁇ 2000A/min.
- Example 7 it can be seen that adding kojic acid to the polishing solution can effectively improve the sensitivity of polishing rate to pressure.
- Example 1 50 ppm of kojic acid was added, and the slope of the polishing rate of the polishing liquid relative to the pressure was 684.5A/min/psi, and at the same time, it had an efficient polishing rate, far exceeding the target polishing rate ⁇ 2000A/min.
- the slope of the polishing rate with respect to the pressure also decreased, which means that the sensitivity of the polishing rate to the pressure was reduced, and at the same time, the polishing rate was maintained at an appropriate level.
- the higher the content of kojic acid the better the technical effect produced. It can be seen from the test results of Example 7 that when the content of kojic acid exceeds a preferred range, the polishing rate will fluctuate to a certain extent with respect to the pressure. Therefore, the content of kojic acid used in the present invention has certain selectivity.
- Example 7 Comparing the test results of Example 7, Example 10 and Example 11, it can be seen that when other conditions are the same, the pH value of the polishing liquid has an influence on the polishing rate of the polishing liquid and the sensitivity of the polishing rate to the pressure. Within a certain range, with the increase of pH value, the polishing rate of the polishing solution may fluctuate in a small range, but the sensitivity of polishing rate to pressure is effectively improved.
- the chemical mechanical polishing liquid in the present invention can effectively reduce the sensitivity of the polishing rate of the polishing liquid to the pressure, and at the same time, the polishing liquid can maintain a suitable polishing rate.
- the polishing liquid in the present invention can be applied to different kinds of cerium oxide abrasive particles. Therefore, the polishing liquid in the present invention can be applied to more general production conditions, has excellent polishing effect, and has broad application prospects in the field of mechanical polishing.
Abstract
Provided are a chemical mechanical polishing solution and a use method therefor. The chemical mechanical polishing solution contains cerium oxide abrasive particles, kojic acid and a pH regulator. The chemical mechanical polishing solution of the present invention can effectively reduce the sensibility of polishing rate to pressure, and can also ensure a polishing solution having an appropriate polishing rate.
Description
本发明涉及化学机械抛光领域，尤其涉及一种化学机械抛光液及其使用方法。The invention relates to the field of chemical mechanical polishing, in particular to a chemical mechanical polishing liquid and a method for using the same.
在化学机械抛光(CMP)过程中，如若使用氧化铈作为研磨颗粒，氧化硅的(氧化物或者TEOS)的抛光速率通常随着抛光的压力增加而增加，抛光速率与抛光压力之间的关系可以通过Preston方程描述。现有技术中，如若使用正电荷(zeta电位>20mV)，颗粒粒径>30nm的氧化铈作为研磨颗粒，在pH＜6抛光液中，TEOS的抛光速率对抛光压力十分敏感，比如：当压力增加0.5psi(从1.5psi增加至2.0psi)，TEOS速率增加近1000A/min。而抛光速率对压力敏感使得抛光过程难以控制。所以，需要降低TEOS抛光速率对压力的敏感性。In the chemical mechanical polishing (CMP) process, if cerium oxide is used as abrasive particles, the polishing rate of silicon oxide (oxide or TEOS) usually increases with the increase of polishing pressure, and the relationship between polishing rate and polishing pressure can be Described by the Preston equation. In the prior art, if positive charge (zeta potential>20mV) and cerium oxide with particle size>30nm are used as abrasive particles, in pH<6 polishing liquid, the polishing rate of TEOS is very sensitive to polishing pressure. With an increase of 0.5 psi (from 1.5 psi to 2.0 psi), the TEOS rate increased by nearly 1000 A/min. The polishing rate is sensitive to pressure, making the polishing process difficult to control. Therefore, there is a need to reduce the sensitivity of the TEOS polishing rate to pressure.
现有技术中，通常采用自动停止(auto stop)的方法降低抛光速率对压力的敏感程度，但自动停止意味着抛光速率降低，通常不能满足生产需求。因此，本领域亟需一种能够有效降低抛光速率对压力的敏感性，同时能够保证适当的抛光速率的抛光液。In the prior art, an auto-stop method is usually used to reduce the sensitivity of the polishing rate to pressure, but the auto-stop means that the polishing rate is reduced, which usually cannot meet production requirements. Therefore, there is an urgent need in the art for a polishing liquid that can effectively reduce the sensitivity of the polishing rate to the pressure, while ensuring an appropriate polishing rate.
发明内容SUMMARY OF THE INVENTION
为解决上述问题，本发明提供一种化学机械抛光液，可以有效降低抛光速率对压力的敏感性，同时保持适当的抛光速率，在本领域具有良好的应用前景。In order to solve the above problems, the present invention provides a chemical mechanical polishing liquid, which can effectively reduce the sensitivity of the polishing rate to the pressure, while maintaining an appropriate polishing rate, and has a good application prospect in the field.
具体的，所述化学机械抛光液含有氧化铈研磨颗粒，曲酸和pH调节剂。Specifically, the chemical mechanical polishing liquid contains cerium oxide abrasive particles, kojic acid and a pH adjuster.
优选的，所述氧化铈研磨颗粒的浓度为质量百分比0.1％-0.5％。Preferably, the concentration of the cerium oxide abrasive particles is 0.1%-0.5% by mass.
优选的，所述氧化铈研磨颗粒的粒径为45nm-75nm。Preferably, the particle size of the cerium oxide abrasive particles is 45nm-75nm.
优选的，所述曲酸的浓度为质量百分比50ppm～2000ppm。Preferably, the concentration of the kojic acid is 50 ppm to 2000 ppm by mass.
优选的，所述化学机械抛光液的pH值为3.0～6.0。Preferably, the pH value of the chemical mechanical polishing solution is 3.0-6.0.
优选的，所述的化学机械抛光液含有添加剂，所述添加剂选自羟基苯甲酸，吡啶甲酸和环糊精中的一种或多种。Preferably, the chemical mechanical polishing liquid contains additives, and the additives are selected from one or more of hydroxybenzoic acid, picolinic acid and cyclodextrin.
本发明的另一方面，提供一种化学机械抛光液的使用方法，将上述任一所述的化学机械抛光液用于减少TEOS抛光速率对压力的敏感性。Another aspect of the present invention provides a method for using a chemical mechanical polishing liquid, wherein any one of the chemical mechanical polishing liquids described above is used to reduce the sensitivity of the TEOS polishing rate to pressure.
与现有技术相比较，本发明的优势在于：Compared with the prior art, the advantages of the present invention are:
1.有效降低抛光速率对压力的敏感性，使抛光过程更加可控、平稳，并且由于降低 了对压力的敏感性，该化学机械抛光液可以适用于更加广泛的抛光材料和使用场景；1. Effectively reduce the sensitivity of polishing rate to pressure, making the polishing process more controllable and stable, and due to the reduced sensitivity to pressure, the chemical mechanical polishing fluid can be applied to a wider range of polishing materials and usage scenarios;
2.同时保持适合的抛光效率，提高抛光效率。2. At the same time maintain suitable polishing efficiency and improve polishing efficiency.
下面结合具体实施例，详细阐述本发明的优势。The advantages of the present invention will be described in detail below with reference to specific embodiments.
依照表1所示的组分及其含量分别配置实施例1～12与对比例1～6化学机械抛光液，并使用硝酸或氢氧化钾作为pH调节剂，将抛光液的pH值调节至所需数值。氧化铈-1的光散射的颗粒尺寸是180nm左右。所述氧化铈-2的光散射的颗粒尺寸160nm左右。通过比表面(BET)方法测量的出的氧化铈颗粒粒径分别为：氧化铈-1:60nm，氧化铈-2:60nm，氧化铈-3：30nm。本发明中，颗粒尺寸以比表面方法为准。未进行表面处理的氧化铈颗粒，当pH＜6时，氧化铈颗粒表面均带有正电荷，zeta电位大于20mV；经表面处理后的氧化铈颗粒，当pH＜6时，颗粒表面带有负电荷，zeta电位小于-20mV。According to the components and their contents shown in Table 1, the chemical mechanical polishing solutions of Examples 1 to 12 and Comparative Examples 1 to 6 were respectively prepared, and nitric acid or potassium hydroxide was used as a pH adjuster to adjust the pH value of the polishing solution to the desired value. Numerical value is required. The light scattering particle size of ceria-1 is around 180 nm. The particle size of the light-scattering cerium oxide-2 is about 160 nm. The particle diameters of the cerium oxide particles measured by the specific surface area (BET) method are: cerium oxide-1: 60 nm, cerium oxide-2: 60 nm, and cerium oxide-3: 30 nm. In the present invention, the particle size is based on the specific surface method. Cerium oxide particles without surface treatment, when pH < 6, the surface of cerium oxide particles are positively charged, and the zeta potential is greater than 20mV; after surface treatment, when pH < 6, the surface of cerium oxide particles has a negative charge. charge, zeta potential is less than -20mV.
表1实施例1～12与对比例1～6的化学机械抛光液组分Table 1 Chemical mechanical polishing liquid components of Examples 1-12 and Comparative Examples 1-6
使用实施例1～12与对比例1～6中的抛光液，采用Mirra抛光机台分别对TEOS空白晶圆进行抛光测试，测量抛光速率对压力值的敏感性。对应抛光条件包括：IC1010抛光垫，Platten和Carrier转速分别为93rpm和87rpm，压力：1.5psi，2psi，3psi，4psi和5psi，抛光液流速为150mL/min，抛光时间为60秒。TEOS膜厚是用NanoSpec膜厚测量系统(NanoSpec6100-300,Shanghai Nanospec Technology Corporation)测出的。从晶圆边缘3mm开始，在直径线上以同等间距测49个点。抛光速率是49点的平均值。相应测得的抛光速率及计算值如表2所示。Using the polishing liquids in Examples 1 to 12 and Comparative Examples 1 to 6, a Mirra polishing machine was used to perform polishing tests on TEOS blank wafers respectively, and the sensitivity of polishing rate to pressure value was measured. Corresponding polishing conditions include: IC1010 polishing pad, Platten and Carrier rotation speeds of 93 rpm and 87 rpm, pressure: 1.5 psi, 2 psi, 3 psi, 4 psi and 5 psi, polishing fluid flow rate of 150 mL/min, and polishing time of 60 seconds. The TEOS film thickness was measured with a NanoSpec film thickness measurement system (NanoSpec 6100-300, Shanghai Nanospec Technology Corporation). Starting at 3mm from the edge of the wafer, measure 49 points at equal intervals on the diameter line. The polishing rate is an average of 49 points. The corresponding measured polishing rates and calculated values are shown in Table 2.
表2实施例1～12与对比例1～6中化学机械抛光液的抛光测试结果Table 2 Polishing test results of chemical mechanical polishing solutions in Examples 1 to 12 and Comparative Examples 1 to 6
由表2所示的测试结果可知，对比例1的速率/压力的斜率数值较大，意味着对比例1的化学机械抛光液表现出很强的抛光速率对压力的敏感性。比如，压力从1.5psi增加到2.0psi，抛光速率增加了928A/min。在压力为1.5psi到5psi范围内，氧化硅抛光速率和压力成正比，每增加1psi，抛光速率增加1292.7A/min。对比例1的化学机械抛光液抛光速率高，在2psi抛光压力下，氧化硅的抛光速率可大于2000A/min，接近目标抛光速率～2000A/min。From the test results shown in Table 2, it can be seen that the slope value of the rate/pressure of Comparative Example 1 is relatively large, which means that the chemical mechanical polishing liquid of Comparative Example 1 exhibits a strong sensitivity of polishing rate to pressure. For example, increasing the pressure from 1.5 psi to 2.0 psi increases the polishing rate by 928 A/min. In the pressure range of 1.5 psi to 5 psi, the polishing rate of silicon oxide is proportional to the pressure, and the polishing rate increases by 1292.7 A/min for every 1 psi increase. The chemical mechanical polishing solution of Comparative Example 1 has a high polishing rate. Under the polishing pressure of 2psi, the polishing rate of silicon oxide can be greater than 2000A/min, which is close to the target polishing rate~2000A/min.
对比例2中，由于氧化铈研磨颗粒表面带有负电荷，其抛光速率明显减低，在压力为2psi时，抛光速率低于700A/min；并且抛光速率/压力的斜率值依旧很高，即，该抛光液的抛光速度对压力仍然较为敏感。In Comparative Example 2, due to the negative charge on the surface of the cerium oxide abrasive particles, the polishing rate was significantly reduced. When the pressure was 2psi, the polishing rate was lower than 700A/min; and the slope value of the polishing rate/pressure was still very high, that is, The polishing speed of the polishing liquid is still relatively sensitive to pressure.
观察实施例1～实施例7可知，在抛光液中加入曲酸可以有效改善抛光速率对压力的敏感性。实施例1中加入50ppm曲酸，其抛光液的抛光速率相对于压力的斜率为684.5A/min/psi，并且同时具有高效的抛光速率，远超过目标抛光速率～2000A/min。并且，随着曲酸含量的增加，抛光速率相对于压力的斜率也随之减小，这意味着抛光速率对压力的敏感性降低，同时，抛光速率也保持在合适的水平。但是，并非曲酸的含量越高，所产生的技术效果越好。从实施例7的测试结果可知，当曲酸的含量超过一优选范围时，抛光速率相对于压力反而会产生一定的波动。因此，本发明中所使用的曲酸含量具有一定的选择性。Observing Examples 1 to 7, it can be seen that adding kojic acid to the polishing solution can effectively improve the sensitivity of polishing rate to pressure. In Example 1, 50 ppm of kojic acid was added, and the slope of the polishing rate of the polishing liquid relative to the pressure was 684.5A/min/psi, and at the same time, it had an efficient polishing rate, far exceeding the target polishing rate ~ 2000A/min. Moreover, with the increase of kojic acid content, the slope of the polishing rate with respect to the pressure also decreased, which means that the sensitivity of the polishing rate to the pressure was reduced, and at the same time, the polishing rate was maintained at an appropriate level. However, it is not that the higher the content of kojic acid, the better the technical effect produced. It can be seen from the test results of Example 7 that when the content of kojic acid exceeds a preferred range, the polishing rate will fluctuate to a certain extent with respect to the pressure. Therefore, the content of kojic acid used in the present invention has certain selectivity.
对比本发明的实施例7、8、9可知，当其他条件相同时，抛光液的抛光速率及抛光速率对压力的敏感性并不是随着氧化铈颗粒的固含量的增加而增加，而是在一定范围内产生波动，但总体而言，抛光液的抛光速率以及抛光速率对压力的敏感性得到了有效的改善。Comparing Examples 7, 8, and 9 of the present invention, it can be seen that when other conditions are the same, the polishing rate of the polishing liquid and the sensitivity of the polishing rate to the pressure do not increase with the increase of the solid content of the cerium oxide particles, but in the There are fluctuations within a certain range, but in general, the polishing rate of the polishing liquid and the sensitivity of the polishing rate to the pressure have been effectively improved.
对比实施例7、实施例10及实施例11的测试结果可知，当其他条件相同时，抛光液的pH值对抛光液的抛光速率及抛光速率对压力的敏感性均有影响。在一定范围内，随着pH值的增加，抛光液的抛光速率可能会在较小范围内产生波动，但抛光速率对压力的敏感性得到了有效的改善。Comparing the test results of Example 7, Example 10 and Example 11, it can be seen that when other conditions are the same, the pH value of the polishing liquid has an influence on the polishing rate of the polishing liquid and the sensitivity of the polishing rate to the pressure. Within a certain range, with the increase of pH value, the polishing rate of the polishing solution may fluctuate in a small range, but the sensitivity of polishing rate to pressure is effectively improved.
对比实施例7、实施例12可知，当其他条件相同时，环糊精可以提高抛光液的抛光速率，并降低压力对抛光速率的影响。Comparing Example 7 and Example 12, it can be seen that when other conditions are the same, cyclodextrin can improve the polishing rate of the polishing liquid and reduce the influence of pressure on the polishing rate.
因此，综合上述实施例可知，本发明中的化学机械抛光液，能够有效降低抛光液的抛光速率对压力的敏感性，并且同时抛光液能够保持合适的抛光速率。除此之外，本发明中的抛光液能够适用于不同种类的氧化铈研磨颗粒。因此，本发明中的抛光液能够适 用于更加普遍的生产条件，并具有优异的抛光效果，在机械抛光领域具有广泛的应用前景。Therefore, it can be seen from the above embodiments that the chemical mechanical polishing liquid in the present invention can effectively reduce the sensitivity of the polishing rate of the polishing liquid to the pressure, and at the same time, the polishing liquid can maintain a suitable polishing rate. Besides, the polishing liquid in the present invention can be applied to different kinds of cerium oxide abrasive particles. Therefore, the polishing liquid in the present invention can be applied to more general production conditions, has excellent polishing effect, and has broad application prospects in the field of mechanical polishing.
以上对本发明的具体实施例进行了详细描述，但其只是作为范例，本发明并不限制于以上描述的具体实施例。对于本领域技术人员而言，任何对本发明进行的等同修改和替代也都在本发明的范畴之中。因此，在不脱离本发明的精神和范围下所作的均等变换和修改，都应涵盖在本发明的范围内。The specific embodiments of the present invention have been described above in detail, but they are only used as examples, and the present invention is not limited to the specific embodiments described above. For those skilled in the art, any equivalent modifications and substitutions to the present invention are also within the scope of the present invention. Therefore, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be included within the scope of the present invention.
Claims (7)
- 一种化学机械抛光液，其特征在于，含有氧化铈研磨颗粒，曲酸和pH调节剂。A chemical mechanical polishing liquid is characterized in that it contains cerium oxide abrasive particles, kojic acid and a pH adjuster.
- 如权利要求1所述的化学机械抛光液，所述氧化铈研磨颗粒的浓度为质量百分比0.1％-0.5％。The chemical mechanical polishing liquid according to claim 1, wherein the concentration of the cerium oxide abrasive particles is 0.1%-0.5% by mass.
- 如权利要求1所述的化学机械抛光液，所述氧化铈研磨颗粒的粒径为45nm-75nm。The chemical mechanical polishing liquid according to claim 1, wherein the particle size of the cerium oxide abrasive particles is 45nm-75nm.
- 如权利要求1所述的化学机械抛光液，所述曲酸的浓度为质量百分比50ppm～2000ppm。The chemical mechanical polishing liquid according to claim 1, wherein the concentration of the kojic acid is 50 ppm to 2000 ppm by mass.
- 如权利要求1所述的化学机械抛光液，所述化学机械抛光液的pH值为3.0～6.0。The chemical mechanical polishing liquid according to claim 1, wherein the pH value of the chemical mechanical polishing liquid is 3.0-6.0.
- 如权利要求1所述的化学机械抛光液，进一步含有添加剂，所述添加剂选自羟基苯甲酸，吡啶甲酸和环糊精中的一种或多种。The chemical mechanical polishing liquid according to claim 1, further comprising an additive selected from one or more of hydroxybenzoic acid, picolinic acid and cyclodextrin.
- 一种化学机械抛光液的使用方法，其特征在于，将如权利要求1～6任一所述的化学机械抛光液用于减少TEOS抛光速率对压力的敏感性。A method for using a chemical mechanical polishing liquid, characterized in that the chemical mechanical polishing liquid according to any one of claims 1 to 6 is used to reduce the sensitivity of the TEOS polishing rate to pressure.
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