KR100851235B1 - Chemical mechanical polishing composition comprising compounds for improving planarity and methods for polishing using the same - Google Patents

Abstract

A chemical mechanical polishing(CMP) slurry composition, and a method for polishing a substrate containing a silicon oxide layer by using the composition are provided to improve polishing smoothness and polishing velocity and to enhance the polishing selectivity of a silicon oxide layer to a silicon nitride layer. A CMP slurry composition comprises 0.01-10 wt% of cerium oxide as an abrasive; 0.01-1,000 ppm of an anionic or nonionic surfactant as a smoothness improver; 0.01-20 wt% of an acidic polymer; and optionally at least one additive selected from an aminoalcohol, a pH controller, an antifoaming agent and an alcohol-based compound. Preferably the acidic polymer is a poly(acrylic acid) or a poly(acrylic acid) polymer; and the smoothness improver is a dodecylbenzenesulfonic acid.

Description

Chemical mechanical polishing composition comprising compounds for improving planarity and methods for polishing using the same}

1 is a graph showing a polishing profile of a silicon oxide film according to the amount of flatness improving agent added according to the present invention.

The present invention relates to a slurry composition for chemical mechanical polishing of a silicon oxide film-containing substrate containing a flatness improving agent and a polishing method using the same.

As the semiconductor manufacturing process is highly integrated, securing a lithography process margin is considered an important technical task. One of the important factors for securing the lithography process margin is a planarization process of a semiconductor manufacturing substrate, and a chemical mechanical polishing (CMP) process is widely used as the planarization method of the substrate.

The better the flatness of the semiconductor manufacturing substrate in the semiconductor manufacturing process, the wider the margin of subsequent processes, which is very advantageous in terms of yield of semiconductor products. As a technique for further improving the flatness of the substrate in the CMP process, techniques for improving a chemical mechanical polishing apparatus or a polishing method are known in the art, but the flatness of the substrate is improved to some extent by the improvement of the polishing apparatus or the polishing method. However, since the improvement is not large, a more fundamental solution is required.

 On the other hand, the slurry composition for CMP has a significant influence on the flatness of the substrate polishing surface. In particular, the cerium oxide slurry has a center-fast polishing property in which the center portion of the substrate is polished a lot and the edges are polished relatively little. For example, when polishing the silicon oxide film in the shallow trench isolation (STI) forming process, the center of the substrate is polished to increase dishing and erosion and to increase the thickness distribution in the wafer, thereby decreasing the production yield. . Conventionally, a polishing composition having a high selectivity has been used to overcome this problem by using a polishing stop layer such as a silicon nitride film. However, as the device becomes highly integrated, the amount of polishing of the center and edge of the substrate is increased. The problem of process dispersion in the substrate due to unevenness has emerged as a problem to be solved.

In addition, in the silicon oxide film polishing process other than the STI process, the need for securing flatness is further increased in terms of securing a margin and improving yield of a lithography process, which is a subsequent process.

A slurry for CMP containing a viscosity increasing agent composed of a nonionic water-soluble polymer or an alcohol compound is disclosed in Korea Patent Publication No. 2006-0064946 as a polishing abrasive composition for solving the polishing irregularity of the center and edge of the substrate. A composition is disclosed. However, in the above patents, when the polishing flatness is improved, the viscosity increases, the polishing rate is lowered, and the cleaning property is deteriorated. Therefore, the development of polishing slurry excellent in both polishing flatness and polishing rate is required.

An object of the present invention is to provide a composition for CMP having an excellent flatness while having an excellent polishing rate for a silicon oxide film. Specifically, the present invention contains a silicon oxide film having excellent polishing rate with respect to the silicon oxide film in a polishing composition of a substrate containing a silicon oxide film, in particular, having a small difference in polishing rate between the center and the edge of the substrate. It is an object of the present invention to provide a chemical mechanical polishing composition for a substrate, and to provide a chemical mechanical polishing composition having excellent polishing selectivity of a silicon oxide film against a silicon nitride film when used in a shallow trench isolation (STI) forming process. There is a purpose.

Still another object of the present invention is to provide a method for polishing a substrate using the composition for CMP according to the present invention.

The present invention provides a composition for chemical mechanical polishing (CMP) of a silicon oxide film-containing substrate having an excellent polishing rate for a silicon oxide film and an excellent flatness after polishing. In addition, the composition for CMP according to the present invention provides a chemical mechanical polishing composition excellent in the polishing selectivity of the silicon oxide film with respect to the silicon nitride film when used in the STI (Shallow Trench Isolation) forming process.

The composition for CMP according to the present invention is characterized by containing cerium oxide as abrasive particles, anionic or nonionic surfactant and acidic polymer as flatness improving agent.

The composition for CMP according to the present invention may further contain one or more additives selected from aminoalcohols, pH adjusting agents, antifoaming agents or alcohol compounds.

As the flatness improving agent according to the present invention, the anionic or nonionic surfactant shows a flatness improving effect even when a small amount of 0.1% by weight or less is used, and there is no change in physical properties of the slurry composition such as viscosity and polishing of the silicon oxide film. Not only is it excellent in speed, but also by containing an acidic polymer, the polishing rate of the silicon oxide film is improved and the polishing rate ratio of the silicon oxide film to the silicon nitride film is improved, thereby showing more excellent polishing characteristics.

As the flatness improving agent contained in the composition for CMP according to the present invention, the anionic surfactant includes a sulfonic acid type, a carboxylic acid type, or a phosphoric acid type surfactant, and the nonionic surfactant is an ethylene oxide (EO) unit (- Surfactants comprising CH ₂ CH ₂ O-) are included. As the flatness improving agent, dodecylbenzenesulfonic acid is most preferred.

Acidic polymers contained in the composition for CMP according to the present invention include a high molecular material containing a sulfonic acid group, a carboxyl group, a phosphoric acid group, or a phosphorous acid group. And poly (4-styrenesulfonic acid). As the acidic polymer according to the present invention, polyacrylic acid and polyacrylic acid copolymer are more preferable.

Hereinafter, the present invention will be described in more detail.

The slurry composition for chemical mechanical polishing (CMP) of a silicon oxide film-containing substrate according to the present invention is characterized by containing cerium oxide as abrasive grains, anionic or nonionic surfactants and acidic polymers as flatness improving agents, and amino alcohols. It may further contain one or more additives selected from pH adjusting agents, antifoaming agents or alcohol compounds. In addition to the above components, deionized water is included so that the total polishing slurry composition is 100% by weight.

1) Flatness improver

Anionic or nonionic surfactants are used as the flatness improving agent, but when cationic surfactants are used, precipitates are generated by reaction with acidic polymers, which is not preferable. The anionic surfactant includes a sulfonic acid-based, carboxylic acid-based or phosphoric acid-based surfactant, and the nonionic surfactant includes a surfactant including an ethylene oxide (EO) unit (-CH ₂ CH ₂ O-). Included. As an example of the flatness improver, dodecylbenzene sulfonic acid (DBS) [C ₁₂ H ₂₅ C ₆ H ₄ SO ₃ H], polyoxyethylene (23) lauryl ether (Polyoxyethylene (23) lauryl ether) As a product name Brij 35 [C ₁₂ H ₂₅ (OCH ₂ CH ₂ ) _n OH, n ~ 23], Polyethylene glycol sorbitan monolaurate (Product Name: Tween 20), polyoxyethylene iso Doton Chemical's Triton X-100 [4- (C ₈ H ₁₇ ) C ₆ H ₄ (OCH ₂ CH ₂ ) _n OH, n ˜10] was used as an octylphenyl ether-based surfactant. Dow Chemical Company Triton DF-16, GALE (Glycolic acid ethoxylate lauryl ether, CH ₃ (CH ₂ ) _x (OCH ₂ CH ₂ ) _y OCH ₂ COOH x = 11 ~ 13, y = 3 10), Dupont Zonyl-FSP (R _f (CH ₂ CH ₂ O) _x PO (O ^- NH ₄ ⁺ ) _y , x + y = 3, R _f = CF ₃ (CF ₂ CF ₂ ) _n n = 2-4), Dupont's Zonyl-FSN (R _f (CH ₂ CH ₂ O) _y H, R _f = CF ₃ (CF ₂ CF ₂ ) _n n = 2-4) Can be mentioned. As the flatness improving agent, dodecylbenzenesulfonic acid is most preferred.

[Formula 1]

The content of the flatness improving agent is preferably 0.01 to 1000 ppm, more preferably 0.1 to 100 ppm, most preferably 1 to 50 ppm based on the total weight of the slurry composition for CMP. If the content of the flatness improving agent is less than 0.01ppm, the polishing flatness improvement effect is weak, if more than 1000ppm is a lot of bubbles occur, the polishing rate can be reduced.

2) acidic polymer

The acidic polymer is an acidic polymer having an acidic functional group, and means an ionic polymer having a negative charge on the polymer chain when the pH is neutral. Polymeric materials containing sulfonic acid groups, carboxyl groups, phosphoric acid groups, or phosphorous acid groups, and include, for example, polyacrylic acid or polyacrylic acid copolymers, polycarboxymethylcellulose (CMC), poly (4-styrenesulfonic acid) 4-styrenesulfonic acid] etc. The acidic polymer is more preferably polyacrylic acid or polyacrylic acid copolymer The content of the acidic polymer is preferably 0.01 to 20% by weight based on the total weight of the slurry, and 0.05 to 10 The weight percentage is more preferable, and 0.2 to 3% is the most preferable, The content of the acidic polymer is more than 20% by weight, the polishing rate is lowered. It is not desirable because it can be weakened.

Commercially available polyacrylic acid is often not pure polyacrylic acid copolymerized or partially substituted. In addition, commercially available polyacrylic acid products often do not have a specified molecular weight, and are mainly sold in the form of aqueous solution, so the content of polyacrylic acid is different in each product, so in the present invention, an aqueous solution of 2.5% by weight is prepared and their viscosity is increased. It measured and used the big and small order of molecular weight. The viscosity of the polyacrylic acid solution depends on the molecular weight, the substituents attached to the carbon chain, the copolymerization with other monomers other than acrylic acid in the chain, and the degree of copolymerization. The polyacrylic acid contained in the slurry for CMP according to the present invention is 2.5% by weight. % Of aqueous solution has a viscosity of 0.8 to 50 cP (centi-poise), and when two or three or more of these polyacrylic acids are used in combination, the polishing rate of the silicon oxide film and the polishing of the silicon oxide film to the silicon nitride film In terms of selectivity, the effect is better. In addition, the content of metal ions that act as metal impurities in the semiconductor process and destroy the function of the device, that is, Na, K, Al, Fe, Ca, Cr, Cu, Mg, Mn, Ni, Pb, Zn It is preferable to select and use polyacrylic acid which is 1 ppm or less. In particular, when using polyacrylic acid consisting of 0.1 to 10% by weight of polyacrylic acid of 5.0 to 8.0 cP, 1 to 40% by weight of polyacrylic acid of 1.5 to 2.0 cP, and 40 to 98.9% by weight of polyacrylic acid of 1.0 to 1.5 cP. The polishing rate and the polishing selectivity of the silicon oxide film are more excellent, and more preferable, and 0.5 to 5% by weight of polyacrylic acid of 5.0 to 8.0 cP, 3 to 30% by weight of polyacrylic acid of 1.5 to 2.0 cP, and poly of 1.0 to 1.5 cP It is most preferable when using polyacrylic acid which consists of 60-96.5 weight% of acrylic acid. The viscosity of the polyacrylic acid indicates the viscosity of polyacrylic acid which is 2.5% by weight aqueous solution at room temperature.

3) cerium oxide

Cerium oxide has a lower hardness than silica particles or alumina particles, but the polishing rate of silicon-containing surfaces such as glass or semiconductor substrates is very fast due to the chemical polishing mechanism in which Si-O-Ce bonds are formed between Si and Ce atoms. Since cerium oxide is advantageous for polishing a semiconductor substrate, it is preferable to contain cerium oxide as abrasive grains. In addition, cerium oxide has an advantage in that it is easy to impart functionality to the polishing composition, such as automatic stop function, increase in selectivity.

As an abrasive contained in the slurry composition for CMP according to the present invention, cerium oxide is prepared by calcining cerium carbonate hydrate in air at 500 ° C. to 1200 ° C., and is preferably used by grinding and classifying to reduce scratches. The classification method may use centrifugation or gravity sedimentation.

The particle size of the cerium oxide abrasive particles is preferably 30 nm to 500 nm, more preferably 70 nm to 300 nm, in consideration of the polishing rate and scratches. Smaller particle sizes result in slower polishing rates, and larger ones cause more frequent scratches.

The cerium oxide content is 0.01 to 10% by weight, preferably 0.05 to 5% by weight and more preferably 0.1 to 2% by weight based on the total weight of the slurry for CMP. If the content of cerium oxide is less than 0.01% by weight, the polishing rate is lowered. If the content is more than 10% by weight, scratching is likely to occur.

The composition for CMP according to the present invention may further contain one or more additives selected from aminoalcohols, pH adjusting agents, antifoaming agents or alcohol compounds.

4) amino alcohol

Slurry composition for CMP according to the invention may further contain an amino alcohol represented by the following formula (2).

[Formula 2]

[R ₁ , R ₂ and R ₃ may be the same or different from each other, R ₁ is C2 to C30 straight or branched hydroxyalkyl, R ₂ and R ₃ hydrogen, C1 to C30 straight or branched alkyl Or C1 to C30 straight or branched hydroxyalkyl.]

Amino alcohol, another compound included in the semiconductor polishing slurry of the present invention, is a compound having both an amine group, which is a functional group having hydrophilicity and basic properties, and a hydroxyl group, which is a hydrophilic, hydrogen-bondable functional group. It is easy to dissolve in water due to hydrophilic group, and has a function of reducing dishing and erosion, pH control, and inhibiting adhesion of abrasive particles on the wafer.

In Formula 2, R ₁ , R ₂ and R ₃ may be the same or different from each other, R ₁ is C2 to C7 linear or branched hydroxyalkyl, R ₂ and R ₃ hydrogen, C1 to C7 straight chain or More preferred are branched alkyl or C1 to C7 straight or branched hydroxyalkyl.

Specific examples of useful amino alcohol compounds include triethanol amine (TEA), diethanol amine (DEA), monoethanol amine (MEA), 3-amino-1-propanol (3-amino-1 -propanol), 1-amino-pentanol, 2-dimethylamino-2-methyl-1-propanol, 1-amino-2-propanol, 1-dimethylamino-2-propanol, 3- Dimethylamino-1-propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2-diethylamino-1-propanol, 2-diethylamino-1-ethanol, 2-ethylamino-1 Ethanol, 1- (dimethylamino) 2-propanol, diethanolamine N-methyl diethanolamine, N-propyl diethanolamine, N-isopropyl diethanolamine, N- (2-methylpropyl) diethanolamine, Nn-butyldiethanolamine, Nt-butylethanolamine, N-cyclohexyl diethanolamine, N-dodecyldiethylamine, 2- (dimethylamino) ethanol, 2-diethylaminoethane , 2-dipropylaminoethanol, 2-butylaminoethanol, 2-t-butylaminoethanol, 2-cycloaminoethanol, 2-amino2-pentanol, 2- [bis (2-hydroxyethyl) amino] 2-methyl-1-propanol, 2- [bis (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxypropyl) ethanolamine, 2-amino-2-methyl- 1-propanol, tris (hydroxymethyl) aminomethane, triisopropanolamine and the like, but are not necessarily limited to these.

Particularly preferred aminoalcohol compounds are triethanol amines, and when used together with polyacrylic acid, the polishing rate of silicon oxide is high and the relative polishing rate of silicon oxide film and silicon nitride film can be 20 or more.

The amino alcohol content is 0.01 to 20% by weight, more preferably 0.05 to 10% by weight, and most preferably 0.1 to 3% by weight based on the total weight of the slurry for CMP. If the content of the amino alcohol is more than 20% by weight, the polishing rate is lowered. If the content of the amino alcohol is too low, less than 0.01% by weight, the polishing selectivity (silicon oxide film / silicon nitride film) is reduced, and dishing and erosion are performed. Erosion is increased.

5) pH adjuster

The slurry composition for CMP according to the present invention preferably further contains a pH to adjust the pH to 4 to 10, more preferably pH 6 to 8. When the pH is outside the above range, the polishing rate of the silicon oxide film is lowered, which is not preferable.

The pH adjusting agent includes an inorganic acid, an organic acid, aqueous ammonia, or a quaternary amine salt, and examples of the quaternary amine salt include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, and the like. More preferred pH adjusting agent is ammonia water, nitric acid or tetramethylammonium hydroxide, with ammonia being most preferred.

6) defoamer

The slurry composition for CMP according to the present invention may further contain an antifoaming agent, which serves to remove bubbles that may occur due to the flatness improving agent. The amount of the antifoaming agent can be used according to the type and content of the flatness improving agent, preferably 0.01 to 1000ppm, more preferably 0.1 to 100ppm, and most preferably 1 to 50ppm based on the total weight of the slurry for CMP. If the content of the antifoaming agent is less than 0.01ppm, the effect of the addition is insignificant, if it is more than 1000ppm more than the effect is not increased further may be economically disadvantageous. Examples of the antifoaming agent include products containing a siloxane-based material, and examples thereof include CELANT-DF180, CELANT-DF16, CELANT-DF23, or DowCorning's DSP Antiform Emulsion.

7) Alcohol Compounds

The slurry composition for CMP according to the present invention may further contain an alcohol compound, which serves to lubricate the slurry composition for CMP to suppress defects and scratches. The alcohol compound is methanol, ethanol, ethylene glycol, n-propanol, isopropanol, 1,2-propanediol (1,2-propandiol), 1,3-propanediol (1,3-propanediol), glycerin, n One or more types selected from -butanol, 2-butanol, or t-butanol can be used.

  The slurry composition for CMP according to the present invention may be prepared in one package, or may be prepared by separating into two or more packages so as to have excellent dispersion stability or storage stability.

Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited by the following Examples.

 EXAMPLE

Polishing composition preparation

The cerium carbonate hydrate was calcined in air at 750 ° C. for 4 hours to produce cerium oxide, and then wet milled with a medium stirred mill and classified to obtain a cerium oxide dispersion. Solid content of the cerium oxide dispersion was 4.5% by weight, and the average particle size was 140 nm.

Polyacrylic acid was used as the acidic polymer. The viscosity of the polyacrylic acid 2.5 weight% aqueous solution used is 6.85 cP of polyacrylic acid H, 1.67 cP of polyacrylic acid L, and 1.21 cP of polyacrylic acid S. Polyacrylic acids H, L and S are manufactured by Nippon Pure Chemical Industries, Ltd.

An acidic polymer, aminoalcohol, flatness improver, antifoaming agent, alcohol compound and the like were mixed in ultrapure water as needed to prepare an additive mixture solution, which was adjusted to pH 6.8 with ammonia and nitric acid. The cerium oxide dispersion and the additive mixture were mixed at an appropriate ratio to be used as the polishing evaluation composition.

Polishing condition

Doosan D & D's UNIPLA 211 CMP equipment uses a polishing slurry prepared by the above-described polishing slurry manufacturing method, wafer pressure 3 psi, retainer ring pressure 4 psi, direct line pressure 3 psi, and spindle rotation. Polishing was performed for 40 sec under the condition of 110 rpm. The feeding rate of the polishing composition liquid at the time of polishing was 200 ml / min. The thickness of the film was measured by K-Max's Spectrathick 4000 and measured in a straight line along the diameter of the wafer.

The wafer used for the polishing test was an 8-inch (200 mm) silicon (Si) wafer coated with a high density plasma (HDP) type silicon oxide film and a silicon nitride film.

Within-wafer nonuniformity (WIWNU)

As the value indicating the polishing flatness, the polishing nonuniformity degree in the wafer was calculated as follows. The lower the value, the higher the polishing flatness.

WIWNU, within-wafer nonuniformity

      = (Standard deviation of polishing rate / average of polishing rate) X 100

Example 1 Polishing Characteristics According to the Type and Content of Flatener

Composition of polishing composition

Cerium oxide: 0.64 wt%

Polyacrylic acid H: 0.014% by weight, L: 0.123% by weight, S: 0.549% by weight,

Triethanolamine: 0.323 wt%

pH is 6.9

The results of polishing rate and polishing flatness according to the type and content of the flatness improving agent added to the polishing composition are shown in Table 1 in comparison with the composition No. (1-1) without the flatness improving agent. .

TABLE 1

 As can be seen in Table 1, the addition of the flatness improving agent lowered the WIWNU value, thereby improving the wafer polishing flatness. The silicon oxide polishing rate was increased or maintained at the same level.

Example 2 DBS Addition Effect

The polishing properties of the silicon oxide film were evaluated by varying the amount of DBS added as the flatness improving agent. Dow Corning DSP antifoaming agent was added 50% by weight of the DBS addition amount, and the rest of the composition was the same as in Example 1 Table 2 shows the polishing results according to the DBS addition amount and the wafer polishing flatness after polishing, Figure 1 Shows the polishing profile of the silicon oxide film.

TABLE 2

As can be seen from Table 2, in the case of the DBS-added polishing slurry, the polishing rate was slightly increased when the DBS was added in a small amount and hardly decreased by the addition of 100 ppm. Polishing flatness can be seen to be greatly improved to 2.18% by adding 25ppm from 7.62% when DBS is not added.

FIG. 1 shows the amount of polishing of silicon oxide film for 40 seconds measured at 40 equal points along the diameter except 5 mm at both edges of the wafer. A zero x-axis is the center point, and -20 and 20 are 5 mm from the edge of the wafer. When DBS is not added, the center portion is tended to be polished a lot. As the amount of DBS is increased, the amount of polishing at the edge is increased and the edge is more polished at 100 ppm. That is, when DBS is not added, the polishing rate at the center of the wafer tends to be high (Center-fast), and when DBS addition amount is 100 ppm, the polishing rate at the edge of the wafer tends to be high (Edge-fast). When DBS addition amount was 25ppm, there was little difference in polishing rate between center and edge of wafer. That is, by adjusting the DBS addition amount, the center-fast and edge-fast trends are adjusted to correct the problem of the profile before using the CMP composition of the present invention, so that the optimal flatness can be obtained.

The viscosity of the abrasive composition of Experiment No. 2-2 was 1.53 cP, and Experiment No. 2-1 was 1.56 cP. Since the viscosity is almost equal, it can be seen that the flatness is improved regardless of the viscosity.

Example 3 Comparison with Commercial Slurry and Silicon Nitride Film Evaluation

The polishing slurry composition of Experiment No. 3-1 is 0.05% of isopropanol added to the Experiment No. 2-2 composition, and Experiment No. 3-2 shows the content of polyacrylic acid in the Experiment No. 2-2 composition of H 0.007 wt%, L 0.062 The weight ratio was changed to 0.618 wt%, and the same composition was prepared except that 0.05% ethylene glycol was added. The content of cerium oxide in Experiment Nos. 3-1 and 3- 2 polishing compositions is 0.64 wt%.

TABLE 3

As can be seen in Table 3, in Examples 3-1 and 3-2, the polishing WIWNU values were excellent, of 3.63% and 4.00%. The polishing selectivity of the silicon oxide film with respect to the silicon nitride film is also higher than 30, which is considered to be suitable for use as a slurry for shallow trench isolation (STI) polishing.

The polishing slurry composition according to the present invention provides a cerium oxide-based polishing composition having excellent flatness of the substrate after polishing. The slurry composition for a silicon oxide film-containing substrate CMP according to the present invention can improve the flatness of the entire substrate without changing physical properties such as viscosity by using a small amount of flatness improving agent, and the polishing rate of the silicon oxide film and the silicon nitride film There is also an advantage that the polishing selectivity of the silicon oxide film against.

Claims (11)

About the total weight of the slurry composition 0.01 to 10% by weight of cerium oxide as abrasive particles; 0.01 to 1000 ppm of anionic or nonionic surfactant as flatness improving agent; And 0.01 to 20% by weight of acidic polymers; A slurry composition for chemical mechanical polishing of a silicon oxide film-containing substrate containing a. The method of claim 1, The acidic polymer is a slurry composition for chemical mechanical polishing of a silicon oxide film-containing substrate, characterized in that the polyacrylic acid or polyacrylic acid copolymer. The method of claim 2, The acidic polymer is a silicon oxide film-containing substrate, characterized in that the polyacrylic acid mixture consisting of polyacrylic acid having a viscosity of 2.5% by weight aqueous solution of 5.0 to 8.0 cP, polyacrylic acid of 1.5 to 2.0 cP, and polyacrylic acid of 1.0 to 1.5 cP Slurry composition for chemical mechanical polishing. delete The method of claim 1, The flatness improving agent is a slurry composition for chemical mechanical polishing of a silicon oxide film-containing substrate, characterized in that 0.1 to 100ppm dodecylbenzenesulfonic acid based on the total weight of the slurry composition. The method according to any one of claims 1 to 3 and 5, Wherein said slurry composition further contains at least one additive selected from aminoalcohol, pH adjuster, antifoaming agent or alcohol compound. The method of claim 6, The amino alcohol is one or more selected from the following formula (2) is a slurry composition for chemical mechanical polishing of the silicon oxide film-containing substrate, characterized in that 0.01 to 20% by weight relative to the total weight of the slurry composition. [Formula 2]

[R ₁ , R ₂ and R ₃ may be the same or different from each other, R ₁ is C2 to C30 straight or branched hydroxyalkyl, R ₂ and R ₃ hydrogen, C1 to C30 straight or branched alkyl Or C1 to C30 straight or branched hydroxyalkyl.] The method of claim 7, wherein The amino alcohol may be triethanol amine (TEA), diethanol amine (DEA), monoethanol amine (monoethanol amine (MEA), 3-amino-1-propanol), 3-amino-1-propanol, 1-amino-pentanol, 2-dimethylamino-2-methyl-1-propanol, 1-amino-2-propanol, 1-dimethylamino-2-propanol, 3-dimethylamino-1 -Propanol, 2-amino-1-propanol, 2-dimethylamino-1-propanol, 2-diethylamino-1-propanol, 2-diethylamino-1-ethanol, 2-ethylamino-1-ethanol, 1 -(Dimethylamino) 2-propanol, diethanolamine N-methyldiethanolamine, N-propyl diethanolamine, N-isopropyl diethanolamine, N- (2-methylpropyl) diethanolamine, Nn-butyl Diethanolamine, Nt-butylethanolamine, N-cyclohexyl diethanolamine, N-dodecyldiethylamine, 2- (dimethylamino) ethanol, 2-diethylaminoethanol, 2-dipropylaminoethanol, 2- Bro Aminoethanol, 2-t-butylaminoethanol, 2-cycloaminoethanol, 2-amino2-pentanol, 2- [bis (2-hydroxyethyl) amino] -2-methyl-1-propanol, 2- [Bis (2-hydroxyethyl) amino] -2-propanol, N, N-bis (2-hydroxypropyl) ethanolamine, 2-amino-2-methyl-1-propanol, tris (hydroxymethyl) amino Slurry composition for chemical mechanical polishing of a silicon oxide film-containing substrate, characterized in that at least one selected from methane or triisopropanolamine. The method of claim 7, wherein The pH adjusting agent is a slurry composition for chemical mechanical polishing of a silicon oxide film-containing substrate, characterized in that the pH is adjusted to 4 to 10 using at least one selected from inorganic acids, organic acids, ammonia water or quaternary amine salts. The method of claim 9, The slurry composition may contain 1 to 50 ppm of dodecylbenzenesulfonic acid as a flatness improver; Cerium oxide 0.05 to 5% by weight; 0.05-10% by weight of polyacrylic acid consisting of 0.1-10% by weight of polyacrylic acid of 5.0-8.0 cP, 1-40% by weight of polyacrylic acid of 1.5-2.0 cP, and 40-98.9% by weight of polyacrylic acid of 1.0-1.5cP; 0.05-10% by weight of triethanolamine; Antifoam 1-50 ppm; And ammonia as a pH adjusting agent, and a slurry composition for chemical mechanical polishing of a silicon oxide film-containing substrate, characterized in that pH is 6-8. A method of polishing a silicon oxide film-containing substrate by using the chemical mechanical polishing slurry composition of any one of claims 1 to 3 and 5.

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