KR20150077541A - Abrasive particles with modified surface and slurry composition containing the same - Google Patents
Abrasive particles with modified surface and slurry composition containing the same Download PDFInfo
- Publication number
- KR20150077541A KR20150077541A KR1020130165529A KR20130165529A KR20150077541A KR 20150077541 A KR20150077541 A KR 20150077541A KR 1020130165529 A KR1020130165529 A KR 1020130165529A KR 20130165529 A KR20130165529 A KR 20130165529A KR 20150077541 A KR20150077541 A KR 20150077541A
- Authority
- KR
- South Korea
- Prior art keywords
- polymer
- film
- slurry composition
- polishing
- abrasive
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to an abrasive particle surface-modified with a polymer and a slurry composition containing the same, and it is possible to prepare a slurry composition for use in a copper film, a copper barrier, and a soft dielectric film CMP using the abrasive grains have. Particularly, according to the present invention, it is possible to suppress the occurrence of dishing, corrosion or scratches in the polishing target film in the polishing process while exhibiting an excellent polishing rate for the copper film even in the acidic region, have.
Description
The present invention relates to abrasive particles surface-modified with a polymer and a slurry composition comprising the same.
2. Description of the Related Art [0002] In recent years, a new microfabrication technique has been developed in accordance with the high integration and high performance of a large scale integration (LSI). One of them is a chemical mechanical polishing (CMP) method, which is frequently used in planarization of an interlayer insulating film, formation of a metal plug, and buried wiring in an LSI manufacturing process, particularly a multilayer wiring forming process. In recent years, copper or a copper alloy has been used as a wiring material in order to improve the performance of the LSI. However, copper or copper alloy is difficult to micro-process by the dry etching method which is frequently used in the formation of conventional aluminum alloy wiring. Therefore, a Damascene method (hereinafter referred to as a " Damascene method ") in which a copper or copper alloy thin film is deposited and buried on an insulating film on which a trench is formed in advance and a thin film of copper or a copper alloy other than the trench is removed by CMP Is mainly used.
In general, most metal films are removed by using a primary polishing slurry composition having a high polishing amount with respect to a metal film quality in the formation of a wiring of copper or a copper alloy, formation of a plug wiring such as tungsten, There is a problem that surface defects such as dishing and erosion are generated by using a secondary polishing slurry composition having a polishing rate equivalent to that of the metal buried portion and the dielectric film.
In order to reduce scratches and defects, a method of modifying the surface of silica has been proposed (US Pat. No. 3,963,627). (Si-OH) on the surface of silica, and these silanol groups have a problem of deteriorating the physical properties of the slurry over time. A representative example of the degradation of physical properties is a phenomenon in which particles having an average particle size larger than that of the particles themselves are generated to cause surface defects such as micro scratches after polishing, and the dispersibility of the particles is lowered so that the particles precipitate rapidly. To suppress the change in physical properties of silica, methods of appropriately coupling (protecting or modifying) OH groups on the surface of silica using a coupling agent in a powder state have been proposed. As an example of such a method, there have been proposed a method of using a silicon-based coupling agent reactive with a silanol group (U.S. Patent No. 3,963,627) or a method of esterifying R0H (U.S. Patent No. 4,664,679). However, these methods are disadvantageous in that the process becomes complicated because it is necessary to perform pretreatment through a high-temperature reaction in a gas phase by pretreating silica before dispersion using a column agent.
The present invention relates to a method for producing a soft polishing particle by modifying the surface of an abrasive particle to produce a soft polishing particle which can be used in various CMP processes such as a copper film, a copper barrier film and a soft dielectric film and which can reduce scratches or defects, And a slurry composition containing the same.
It is another object of the present invention to provide a method of manufacturing a semiconductor device which can secure stability in an acidic region and has an excellent polishing rate and a polishing rate for not only a metal film including an oxide film and a copper film but also a soft film, To provide an abrasive particle surface-modified with a polymer and a slurry composition containing the same, which can maintain the surface state of the film after polishing abundantly.
However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.
According to a first aspect of the present invention, there is provided a polishing pad comprising: abrasive grains; And a polymer layer on the surface of the abrasive grains.
Wherein the abrasive grains include at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of silica, ceria, zirconia, alumina, Titania, barium, titania, germania, manganese, and magnesia.
The polymer may be selected from the group consisting of a polyacrylic acid copolymer, a polymethacrylic acid copolymer, a polystyrene-acrylic acid copolymer, an acrylic acid-maleic acid copolymer, an acrylic acid-ethylene copolymer, an acrylic acid-acrylamide copolymer and an acrylic acid- And at least one selected from the group consisting of
The molecular weight of the polymer may be from 100,000 to 10,000,000.
The surface modification may be performed by coating the abrasive particle surface with a polymer.
The ratio of the radius of the surface-modified abrasive particles to the thickness of the polymer layer using the polymer may be 1: 0.01 to 1.
The thickness of the polymer layer may be from 3 to 30 nm.
The second aspect of the present invention provides a slurry composition for polishing a metal film and a soft film comprising the abrasive grains.
The slurry composition may further include at least one selected from the group consisting of a copper complexing agent containing a carboxyl-amino group, a polishing regulator, a corrosion inhibitor and an oxidizing agent.
The surface-modified abrasive grains contained in the slurry composition may be in the form of a mixture of spherical abrasive grains and non-spherical abrasive grains.
The present invention can control the surface charge of the abrasive particles by modifying the surface of the abrasive particles by using a polymer, and by modifying the surface of the abrasive particles with soft abrasive particles, a slurry composition for use in a copper film, a copper barrier film and a soft dielectric film CMP can do. Particularly, according to the present invention, it is possible to secure stability in an acidic region and to have an excellent polishing rate and a polishing rate for a soft film as well as a metal film including an oxide film and a copper film, freely adjust the polishing selectivity with other thin films, It is possible to suppress the occurrence of dishing, corrosion or scratches on the film to be polished during the polishing process, and to maintain the surface condition of the film to be polished to be excellent. Therefore, a copper wiring layer or the like of a semiconductor device having excellent reliability and characteristics can be more efficiently formed through the use of the surface-modified abrasive grains and the slurry composition containing the abrasive grains, thereby contributing to obtaining a high-performance semiconductor device have.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flowchart showing a method of surface modification of a colloidal abrasive particle using a polymer according to an embodiment of the present invention. FIG.
2A and 2B show a particle size distribution (PSD) showing the average size of abrasive grains before and after the surface modification of the abrasive grains.
Figures 3a and 3b show defect maps measured using AIT-XP after CMP using a slurry composition comprising surface modified abrasive particles, according to one embodiment of the present invention.
Fig. 4 shows a defect map measured using AIT-XP after CMP using a slurry composition containing abrasive grains which had not been surface-modified.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. In addition, terms used in this specification are terms used to appropriately express the preferred embodiments of the present invention, which may vary depending on the user, the intention of the operator, or the practice of the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.
Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.
Hereinafter, abrasive particles surface-modified using the polymer of the present invention and a slurry composition containing the same will be described in detail with reference to examples and drawings. However, the present invention is not limited to these embodiments and drawings.
According to a first aspect of the present invention, an abrasive particle surface-modified using a polymer comprises abrasive particles; And a polymer layer on the abrasive particle surface.
Wherein the abrasive grains include at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of silica, ceria, zirconia, alumina, At least one selected from the group consisting of titania, barium, titania, germania, manganese, and magnesia.
According to one aspect of the present invention, the abrasive grains are preferably colloidal metal oxides, and such colloidal abrasive grains may be selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium titania, germania, manganese, and magnesia May be dispersed in an aqueous dispersion medium. Among them, it is most preferable to use colloidal silica as the colloidal abrasive grains. But may include, but is not limited to, various abrasive particles depending on the required properties or needs.
However, the hardness of abrasive particles composed of a metal oxide, an organic or inorganic coated metal oxide, and a colloidal metal oxide is likely to cause scratches due to surface contact in the case of a soft film, especially a copper film. Therefore, in order to solve this problem, it is possible to modify the surface of the abrasive grains to have a smooth surface state, thereby contributing to suppressing the occurrence of defects (scratches).
1 is a flowchart showing a method for surface modification of a colloidal abrasive particle using a polymer according to an embodiment of the present invention.
Referring to FIG. 1, a method of surface-modifying colloidal abrasive particles using a polymer includes first preparing a colloidal particle solution by dispersing abrasive particles in a dispersion liquid (S110).
According to one aspect of the present invention, the dispersion liquid may contain water, alcohol, or both, but is not limited thereto as long as the abrasive particles can be dispersed.
According to one aspect of the present invention, the abrasive particles in the colloidal particle solution may be from about 1 to about 20 weight percent. However, the present invention is not limited thereto. If the abrasive grains are less than about 1% by weight, problems of lowering the polishing rate may occur. If the abrasive grains are more than about 20% by weight, dishing or scratching may occur due to abrasion .
Next, the colloidal particles are coated with a polymer (S120).
According to one aspect of the present invention, the surface of the abrasive grains is modified using the polymer, and the polymer used herein is at least one selected from the group consisting of a polyacrylic acid copolymer, a polymethacrylic acid copolymer, a polystyrene-acrylic acid copolymer, Acrylic acid-acrylic acid copolymer, acrylic acid-acrylamide copolymer, acrylic acid-acrylamide copolymer, and acrylic acid-polyacrylamide copolymer, but is not limited thereto and may be a polyacrylic acid (PAA) copolymer It may be most preferred to use the coalescence as the polymer. By modifying the surface with a polymer, the surface charge of the abrasive grains can be controlled and can be modified with soft abrasive grains.
According to one aspect of the present invention, the polymer may be from about 0.05% to about 10% by weight, but is not limited thereto. If the amount of the polymer is less than about 0.05% by weight, surface modification may not be effective, and if the amount of the polymer is more than about 10% by weight, agglomeration of the silica particles may occur.
According to one aspect of the present invention, the molecular weight of the polymer may be from 100,000 to 10,000,000, preferably from about 50,000 to 5,000,000, by weight, but is not limited thereto. When the molecular weight of the polymer is less than 100,000, surface modification may not be smoothly performed, and when the molecular weight of the polymer is more than 10,000,000, aggregation of abrasive particles may occur
According to one aspect of the present invention, surface modification of the abrasive particles can be performed by coating with a polymer to form a polymer layer.
The thickness of the polymer layer to be coated may be 3 to 30 nm. If the polymer layer is formed at less than 3 nm out of the above range, the effect of surface modification can not be sufficiently exhibited. If it is more than 30 mm, the function of the abrasive grains can not be exhibited stably. However, in the case of performing a polishing process using a slurry containing abrasive particles, the thickness and strength of such a coated polymer layer can be adjusted and used in order to adjust the polishing rate and to reduce dishing and corrosion.
According to one aspect of the present invention, the thickness of the polymer layer may be adjusted in consideration of the size of the abrasive particles, so that the ratio of the radius of the abrasive particles surface-modified with the polymer to the thickness of the polymer layer is 1: 0.01 Lt; / RTI > When the ratio of the thickness of the polymer layer to the radius of the surface-modified abrasive grains using the polymer is less than 0.01, the coating layer is thin and is difficult to form soft abrasive grains. When the ratio is more than 1, It is difficult to exhibit an excellent polishing rate or a polishing rate. Preferably, the ratio of the radius of the surface-modified abrasive particles to the thickness of the polymer layer using the polymer may be from 1: 0.01 to 0.5.
The method of preparing the surface-modified abrasive grains using the polymer of the present invention may further include forming a primary coating or a secondary coating as required. Further, the same process may be applied to the preformed coating as needed to further conduct the coating.
The metal film (copper film) and the slurry composition for soft film polishing according to the second aspect of the present invention include the above abrasive grains.
According to one aspect of the present invention, the surface-modified abrasive particles may have a primary particle size of about 1 nm to about 100 nm and a secondary particle size of about 30 nm to about 300 nm, It is not. The average size of primary particles in the polishing slurry should be 100 nm or less in order to ensure uniformity of particles in a liquid phase. If the average primary particle size is less than 1 nm, the polishing rate may decrease. The surface-modified abrasive particles of the present invention can be used by adjusting the thickness and strength of the polymer layer in order to control the polishing rate and reduce the dishing and corrosion.
According to one aspect of the present invention, the abrasive particles surface-modified with the polymer may be from about 0.1% to about 20% by weight of the slurry composition, but are not limited thereto. When the abrasive grains are less than about 0.1 wt%, the polishing rate of the oxide film is decreased. When the abrasive grains are more than about 20 wt%, the abrasive grains may cause defects.
According to one aspect of the present invention, the slurry composition may further include at least one selected from the group consisting of a copper complexing agent containing a carboxyl-amino group, a polishing regulator, a corrosion inhibitor and an oxidizing agent, It is not.
According to one aspect of the present invention, the copper complexing agent is at least one selected from the group consisting of an aliphatic amino acid, a nonaromatic amino acid including a hydroxyl group, an amino acid containing sulfur, an acidic amino acid, a basic amino acid, But it is not limited thereto. Specifically, the copper complexing agent may include, but is not limited to, at least one selected from the group consisting of glycine, serine, asparagine, glutamine and arginine.
The copper complexing agent may be from about 0.01% to about 2% by weight of the slurry composition, but is not limited thereto. As the copper complexing agent is contained in such an amount, it is possible to reduce the occurrence of dishing or corrosion on the polished surface of the polished film while optimizing the polishing rate of the polished film. If the copper complexing agent is contained in an excessively large content, corrosion may occur on the surface of the film to be polished, and the uniformity of the film to be polished, that is, WIWNU (In Wafer Non-Uniformity) may deteriorate.
According to one aspect of the present invention, the polishing regulator may include at least one selected from the group consisting of ethylenediaminetetraacetic acid, cysteine, glutaric acid, and pimelic acid, but is not limited thereto.
According to one aspect of the present invention, the abrasive modifier may be from about 0.01% to about 5% by weight of the slurry composition, but is not limited thereto. If the polishing regulator is less than about 0.01 wt%, the polishing rate of the barrier film may be lowered. If the polishing regulator is more than about 5 wt%, the polishing rate of the copper film and the barrier film may increase have.
According to one aspect of the present invention, the corrosion inhibitor is a component added to prevent such a polishing target film from being subjected to excessive chemical attack by a copper complexing agent, etc., in the recessed portion of the film to be polished to prevent dishing or the like from occurring.
The corrosion inhibitor may be selected from the group consisting of benzotriazole (BTA), 1,2,4-triazole, 5-aminotetrazole (ATA), 5-methyl-1H- benzotriazole, Amino-5-methyl-4H-1,2,4-triazole, K-sobait, 2-aminopyrimidine, A group consisting of hydroxyquinoline, N-phenyl-1,4-phenyleneamine, hexyl-benzotriazole and polypyrrole. , But the present invention is not limited thereto. As an anticorrosive agent, an anionic surfactant can be used. Examples thereof include sodium dodecyl sulfate, ammonium dodecyl sulfate, dodecylbenzenisulfuronate, dodecylbenzenesulfonic acid and sodium dodecylsulfuronate But it should not be construed as being limited thereto.
The corrosion inhibitor may be from about 0.01% to about 0.5% by weight of the slurry composition in terms of corrosion inhibiting effect, polishing rate and storage stability of the slurry composition, but is not limited thereto. If the corrosion inhibitor is less than about 0.01 wt%, the polishing of the copper film is not possible and dishing problems may occur. If the corrosion inhibitor is more than about 0.5 wt%, the polishing of the copper film is lowered and the organic residue remains Problems can arise.
According to one aspect of the present invention, the oxidizing agent functions to oxidize a film to be polished, for example, a copper film to form an oxide film, and by removing the oxide film by a physical and chemical polishing action of the slurry composition, The polishing of the CMP proceeds.
The oxidizing agent may include at least one selected from the group consisting of hydrogen peroxide, ammonium peroxodisulfate, benzoyl peroxide, calcium peroxide, barium peroxide and sodium peroxide, but is not limited thereto.
The oxidizing agent may be from about 0.01% to about 5% by weight of the slurry composition, but is not limited thereto.
If the content of the oxidizing agent is less than about 0.01% by weight, the polishing rate for the film to be polished may be lowered. If the content of the oxidizing agent is greater than about 5% by weight, ), Polishing is not performed, and an oxide film is grown, which may deteriorate the characteristics of the copper film.
According to one aspect of the present invention, a nonionic surfactant may be further added to improve the dispersibility of the slurry composition. The nonionic surfactant may include, but is not limited to, at least one selected from the group consisting of ethylene glycol, polyethylene glycol, glycerol, polyethylene propylene glycol, and propylene glycol. When pH adjustment is required, the slurry composition may further comprise a pH adjusting agent. For example, when the acid is titrated, the slurry composition may contain nitric acid (HNO 3 ), hydrochloric acid (HCl) and sulfuric acid (H 2 SO 4 ) CH 3 COOH), and in the case of titration with an alkali, ammonia and TMAH may be used, but the present invention is not limited thereto.
According to one aspect of the present invention, the pH adjusting agent may be about 0.01 wt% to about 1 wt% of the slurry composition, but is not limited thereto. With the acidic pH adjusting agent, the slurry composition may be acidic, such as, but not limited to, an acid having a pH of about 2 to about 5.
According to one aspect of the present invention, the polishing target film may include, but is not limited to, a copper film, a copper barrier film, and a soft dielectric film. Further, the slurry composition can be used for other thin films, for example, titanium (Ti), tantalum (Ta), ruthenium (Ru) used as a barrier film, ), Molybdenum (Mo), cobalt (Co), and gold (Au), and exhibits a low polishing rate for an oxide film used as an insulating film of a semiconductor device. Thus, the slurry composition can exhibit excellent polishing selectivity between the polishing target film and another thin film.
According to one aspect of the present invention, the surface-modified abrasive grains contained in the copper film and the oxide film polishing slurry composition may be in the form of a mixture of spherical abrasive grains and non-spherical abrasive grains. The polishing rate can be increased when the non-spherical abrasive grains are appropriately mixed and used as compared with the case where only the spherical abrasive grains are used in the copper film and oxide film polishing slurry composition.
The content of the non-spherical abrasive grains may be 0.1 wt% to 20 wt%. Preferably from 5% to 15% by weight. When the content of the non-spherical abrasive grains is less than 0.1 wt%, it is difficult to obtain an effect of raising the polishing rate as compared with the case of polishing with a slurry composition containing only spherical abrasive grains. When the content is more than 20 wt%, scratches or defects There is a risk of
The non-spherical abrasive grains may have a sphericity of 0.8 or less. The term " spherical shape " in the present invention is a concept including not only a complete sphere whose surface is smooth but also a complete sphere. Here, "spherical shape" is defined as r / R, where R is the diameter of the same circle as the projected area of the particle, and r is the diameter of the minimum circle circumscribing the projection of the particle. The closer the value of the sphericity is to 1, the more the shape of the complete sphere is, and the closer to 0 the sphere is. The non-spherical abrasive grains used in the present invention preferably have a sphericity of 0.8 or less. The spherical abrasive grains may include an ellipsoid or a particle having a polyhedral shape with a partially protruded portion, . ≪ / RTI >
Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.
[Preparation of surface-modified particles]
(nm)
(nm)
(nm)
(EA)
[Evaluation of abrasive grain size change before and after surface modification]
The particle size of each of the Examples was analyzed by using a particle size analyzer, before and after the surface modification.
2A and 2B show a particle size distribution (PSD) showing the average size of abrasive grains before and after the surface modification of the abrasive grains. The change in size after the surface modification of the abrasive grains can be confirmed.
The average size of the abrasive grains before surface modification of Fig. 2A (Example 2) was 60.8 nm, and the average size of the abrasive grains after surface modification was 66.9 nm, and the size of the abrasive grains was increased by 6.1 nm. The average size of the abrasive grains before surface modification of FIG. 2B (Example 3) was 56.1 nm, and the average size of the abrasive grains after surface modification was 73.1 nm, which indicates that the size of the abrasive grains increased by 17.0 nm. Each of these is coated with a polymer to increase the size of the entire abrasive particles, and thus it can be confirmed that the surface is modified with a polymer. Then, by using these, it is evaluated whether or not the defect to the copper film is reduced when polishing is carried out.
[Polishing condition]
1. Polishing equipment: 8 inch (200 mm) CMP equipment - Uniplar 231 (Doosan Mechatech
Company)
2. Polishing pad: VP1000 (Dow)
3. Platen speed: 24 rpm (spindle speed: 60 rpm) rpm
4. Flow rate: 200 cc / min
5. Pressure: 3 psi
[Evaluation of Defects of Surface Modified Particles]
The defects were measured by DEFECT of copper film and oxide film after CMP using AIT-XP of KLA Tencor. The number of defects measured using AIT-XP is shown in Table 1 above.
Figures 3a and 3b show defect maps measured using AIT-XP after CMP using a slurry composition (Examples 1 and 2) comprising the surface modified abrasive particles of the present invention, Was 50 or less. FIG. 4 shows a defect map measured using AIT-XP after CMP using a slurry composition (comparative example) including abrasive particles not surface-modified, and the number of defects was 500 or less and 4,000 or less, respectively.
As described above, when the number of defects on the surface of the copper film was compared using the slurry composition according to Comparative Examples and Examples of the present invention, it was found that when polishing with a slurry containing surface-modified abrasive particles using a polymer , It can be confirmed that the number of defects is significantly reduced.
While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims
Claims (10)
A polymer layer on the abrasive particle surface;
Wherein the abrasive particles are surface-modified with a polymer.
Wherein the abrasive particles comprise at least one selected from the group consisting of a metal oxide coated with a metal oxide, an organic or inorganic material, and a metal oxide in a colloidal state,
Wherein the metal oxide comprises at least one selected from the group consisting of silica, ceria, zirconia, alumina, titania, barium, titania, germania, manganese and magnesia.
The polymer may be selected from the group consisting of a polyacrylic acid copolymer, a polymethacrylic acid copolymer, a polystyrene-acrylic acid copolymer, an acrylic acid-maleic acid copolymer, an acrylic acid-ethylene copolymer, an acrylic acid-acrylamide copolymer and an acrylic acid- And at least one selected from the group consisting of:
Wherein the polymer has a molecular weight of 100,000 to 10,000,000.
Wherein the surface modification is performed by coating the abrasive particle surface with a polymer.
Wherein the ratio of the radius of the surface-modified abrasive particles to the thickness of the polymer layer using the polymer is 1: 0.01 to 1.
Wherein the polymer layer has a thickness of 3 to 30 nm.
Wherein the slurry composition further comprises at least one selected from the group consisting of a copper complexing agent containing a carboxyl-amino group, a polishing regulator, a corrosion inhibitor and an oxidizing agent.
Wherein the surface-modified abrasive grains are in the form of a mixture of spherical abrasive grains and non-spherical abrasive grains.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130165529A KR20150077541A (en) | 2013-12-27 | 2013-12-27 | Abrasive particles with modified surface and slurry composition containing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020130165529A KR20150077541A (en) | 2013-12-27 | 2013-12-27 | Abrasive particles with modified surface and slurry composition containing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20150077541A true KR20150077541A (en) | 2015-07-08 |
Family
ID=53790272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020130165529A KR20150077541A (en) | 2013-12-27 | 2013-12-27 | Abrasive particles with modified surface and slurry composition containing the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR20150077541A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11254840B2 (en) | 2019-03-13 | 2022-02-22 | Samsung Electronics Co., Ltd. | Polishing slurry and method of manufacturing semiconductor device |
| KR20220153275A (en) * | 2021-05-11 | 2022-11-18 | 주식회사 케이씨텍 | Surfacetreated abrasive particles and polishing slurry composition |
-
2013
- 2013-12-27 KR KR1020130165529A patent/KR20150077541A/en active Search and Examination
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11254840B2 (en) | 2019-03-13 | 2022-02-22 | Samsung Electronics Co., Ltd. | Polishing slurry and method of manufacturing semiconductor device |
| US11795347B2 (en) | 2019-03-13 | 2023-10-24 | Samsung Electronics Co., Ltd. | Polishing slurry and method of manufacturing semiconductor device |
| KR20220153275A (en) * | 2021-05-11 | 2022-11-18 | 주식회사 케이씨텍 | Surfacetreated abrasive particles and polishing slurry composition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4264781B2 (en) | Polishing composition and polishing method | |
| JP6581198B2 (en) | Composite abrasive particles for chemical mechanical planarization compositions and methods of use thereof | |
| JP3899456B2 (en) | Polishing composition and polishing method using the same | |
| TW201708452A (en) | Barrier chemical mechanical planarization slurries using ceria-coated silica abrasives | |
| TWI658133B (en) | Polishing slurry composition | |
| TWI756356B (en) | Grinding liquid and grinding method | |
| JP2002075927A (en) | Composition for polishing and polishing method using it | |
| JP2006519499A (en) | Modular barrier removal polishing slurry | |
| KR20080014776A (en) | Abrasive and process for producing semiconductor integrated-circuit unit | |
| KR101465604B1 (en) | Cmp slurry composition for polishing copper barrier layer and polishing method using the same | |
| JPWO2014007063A1 (en) | Polishing liquid for CMP, storage liquid and polishing method | |
| JPWO2008132983A1 (en) | Abrasive composition and method for producing semiconductor integrated circuit device | |
| US20080171441A1 (en) | Polishing compound and method for producing semiconductor integrated circuit device | |
| CN111087929A (en) | Barrier slurry removal rate improvement | |
| JP5319887B2 (en) | Slurry for polishing | |
| KR101427883B1 (en) | Surface-modified abrasive particle, method for preparing the same and slurry composition having the same | |
| KR101470980B1 (en) | Surface-modified abrasive particle and slurry composition having the same | |
| TW201127944A (en) | CMP polishing liquid and polishing method using the same and fabricating method of semiconductor substrate | |
| KR20150044479A (en) | Slurry composition for polishing copper and oxide film | |
| KR20150077541A (en) | Abrasive particles with modified surface and slurry composition containing the same | |
| KR101197163B1 (en) | Cmp slurry | |
| WO2011152356A1 (en) | Polishing agent and polishing method | |
| KR101548715B1 (en) | Slurry composition for polishing copper barrier layer | |
| JP6811090B2 (en) | Abrasive liquid composition for silicon oxide film | |
| KR101483448B1 (en) | Slurry composition for polishing copper and oxide layer and polishing method using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E601 | Decision to refuse application | ||
| AMND | Amendment |