WO2022110442A1 - Piezoelectric mems microphone - Google Patents

Piezoelectric mems microphone Download PDF

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Publication number
WO2022110442A1
WO2022110442A1 PCT/CN2020/139422 CN2020139422W WO2022110442A1 WO 2022110442 A1 WO2022110442 A1 WO 2022110442A1 CN 2020139422 W CN2020139422 W CN 2020139422W WO 2022110442 A1 WO2022110442 A1 WO 2022110442A1
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WO
WIPO (PCT)
Prior art keywords
peripheral wall
support
piezoelectric
piezoelectric mems
support portion
Prior art date
Application number
PCT/CN2020/139422
Other languages
French (fr)
Chinese (zh)
Inventor
童贝
石正雨
沈宇
段炼
Original Assignee
瑞声声学科技(深圳)有限公司
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Publication of WO2022110442A1 publication Critical patent/WO2022110442A1/en

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Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00Piezoelectric transducers; Electrostrictive transducers
    • H04R17/02Microphones
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00Electrostatic transducers
    • H04R19/04Microphones
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/02Transducers using more than one principle simultaneously

Definitions

  • the present application relates to the technical field of acoustics and electricity, and in particular, to a piezoelectric MEMS microphone.
  • the existing piezoelectric MEMS unit includes a base, a support and a piezoelectric diaphragm, wherein the support includes four support beam structures and a support column, and the piezoelectric diaphragm includes four cantilever beam diaphragms corresponding to the support beam structures , the piezoelectric diaphragm is fixed on the support column at the center of the base, and the end of the cantilever beam diaphragm is warped under the action of sound pressure, so that the piezoelectric layer in the piezoelectric diaphragm is stressed to generate voltage output.
  • the area is large, and the piezoelectric diaphragm above the support column has almost no voltage output; in addition, when the patch is placed on the PCB, it will affect the entry of the sound pressure of the air inlet.
  • the purpose of the present application is to provide a MEMS microphone chip that improves the sound pressure of the air inlet and further improves the sensitivity.
  • the present application provides a piezoelectric MEMS microphone, comprising at least one piezoelectric MEMS unit, the piezoelectric MEMS unit comprising: a substrate, including an annular peripheral wall surrounding a receiving cavity and a the supporting structure; the diaphragm structure is partially fixed to the supporting structure; the supporting structure includes a supporting portion spaced from the peripheral wall and a number of extension arms extending from the peripheral wall to the supporting portion; the One end of the extension arm is connected to the support part, and the other end is connected to the peripheral wall to divide the receiving cavity into several cavities; the support part is formed with a through hole penetrating the support part along the vibration direction.
  • the base includes a first substrate
  • the receiving cavity includes a first cavity formed on the first substrate
  • the peripheral wall includes a first peripheral wall surrounding the first cavity
  • the support The portion includes a first support portion disposed in the first cavity and spaced apart from the first peripheral wall
  • a plurality of the extension arms include a plurality of first support portions extending from the first peripheral wall to the first support portion.
  • An extension arm, the through hole includes a first through hole formed along the vibration direction and penetrating the first support portion.
  • the base further includes an isolation layer disposed between the first substrate and the diaphragm structure, and the projection profile of the isolation layer along the vibration direction is the same as that of the first substrate along the vibration direction.
  • the diaphragm structure is an integrated structure, including a fixed area and several movable parts, the fixed area includes an anchor part and several anchor arms radially extending from the edge of the anchor part, so The anchor portion is fixed to the support portion, the anchor arm is fixed to the extension arm, and each movable portion surrounds the anchor portion and is spaced from the anchor arm.
  • the fixed area is provided above the support structure, and the movable portion falls into the cavity along the orthographic projection of the axial direction of the base.
  • the diaphragm structure includes a first electrode layer, a first piezoelectric layer and a second electrode layer stacked in sequence along the vibration direction, and the first electrode layer is disposed on the diaphragm structure close to the support structure. side.
  • the diaphragm structure further includes a second piezoelectric layer stacked on a side of the second electrode layer away from the first piezoelectric layer, and a second piezoelectric layer stacked on the second piezoelectric layer the third electrode layer.
  • a plurality of the piezoelectric MEMS units are distributed in an array structure.
  • the beneficial effect of the present application is to provide a piezoelectric MEMS microphone, the support structure of which includes a support portion spaced from a peripheral wall and a plurality of extension arms extending from the peripheral wall to the support portion; by arranging through holes in the support portion The sound pressure of the air intake is improved, and the sensitivity is further improved.
  • FIG. 1 is a schematic structural diagram of a piezoelectric MEMS unit according to an embodiment of the present invention
  • FIG. 2 is a front view of a piezoelectric MEMS unit according to an embodiment of the present invention.
  • FIG. 3 is a perspective view of a piezoelectric MEMS unit according to an embodiment of the present invention.
  • FIG. 4 is a bottom view of a piezoelectric MEMS unit according to an embodiment of the present invention.
  • FIG. 5 is a cross-sectional view along the A-A direction in FIG. 3;
  • FIG. 6 is a schematic structural diagram of a substrate according to an embodiment of the present invention.
  • FIG. 7 is a perspective view of a substrate according to an embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of a first substrate according to an embodiment of the present invention.
  • FIG. 9 is a schematic structural diagram of an isolation layer according to an embodiment of the present invention.
  • FIG. 10 is a schematic structural diagram of a diaphragm structure according to an embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of a first electrode layer according to an embodiment of the present invention.
  • FIG. 12 is a schematic structural diagram of a first piezoelectric layer according to an embodiment of the present invention.
  • the piezoelectric MEMS microphone includes several piezoelectric MEMS units 1, and the several piezoelectric MEMS units 1 are distributed in an array structure. There are four MEMS units 1, which are distributed in a 2*2 array structure. Of course, to ensure a certain sensitivity or signal-to-noise ratio, the piezoelectric MEMS unit 1 can also be a 3*3 array structure distribution, a 4*4 array structure distribution, or More array-like structures.
  • the piezoelectric MEMS unit 1 includes a substrate 10 and a diaphragm structure 30 .
  • the square substrate 10 has a receiving cavity 101 ; the diaphragm structure 30 is formed above the substrate 10 .
  • the base 10 includes an annular peripheral wall 102 surrounding the receiving cavity 101 and a supporting structure disposed in the receiving cavity 101 ; the supporting structure includes a supporting portion 103 disposed at intervals from the peripheral wall 102 and a self-supporting structure.
  • the peripheral wall 102 extends to a plurality of extending arms 104 of the support portion 103 , wherein the support portion 103 is disposed at the center of the receiving cavity 101 .
  • One end of the extension arm 104 is connected to the support portion 103 , and the other end of the extension arm 104 is connected to the peripheral wall 102 to divide the receiving cavity 101 into a plurality of cavities 105 spaced along the circumference of the extension arm 104 .
  • the base 10 includes a first substrate 11 and an isolation layer 12 disposed between the first substrate 11 and the diaphragm structure 30 .
  • the first substrate 11 includes a first peripheral wall 112 surrounding the first cavity 111 , a first supporting portion 113 disposed in the first cavity 111 and spaced from the first peripheral wall 112 , and a first supporting portion 113 from the first peripheral
  • the wall 112 extends to the first extension arm 114 of the first support portion 113, the first support portion 113 is arranged at the center of the first cavity 111, and the first support portion 113 and the first extension arm 114 constitute a first support structure;
  • One end of an extension arm 114 is connected to the first support portion 113 , and the other end of the first extension arm 114 is connected to the first peripheral wall 112 to divide the first cavity 111 into a plurality of circumferential intervals along the first extension arm 114
  • the first sub-cavity 115 is provided; wherein, the first support portion 113 is formed with a first through hole 116 penetrating the first support portion 113 along the vibration direction, and the first through hole 116 is formed by etching.
  • the isolation layer 12 includes a second peripheral wall 122 surrounding the second cavity 121 , a second supporting portion 123 disposed in the second cavity 121 and spaced from the second peripheral wall 122 , and extending from the second peripheral wall 122 to
  • the second extension arm 124 of the second support portion 123 is arranged at the center of the second cavity 121 , and the second support portion 123 and the second extension arm 124 constitute a second support structure; the second extension arm 124 One end of the second extending arm 124 is connected to the second supporting portion 123 , and the other end of the second extending arm 124 is connected to the second peripheral wall 122 , thereby dividing the second cavity 121 into a plurality of second sub-sections spaced along the circumferential direction of the second extending arm 124 Cavity 125; wherein, the second support portion 123 is formed with a second through hole 126 penetrating the second support portion 123 along the vibration direction, and the second through hole 126 is formed by etching.
  • the first cavity 111 communicates with the second cavity 121 to form the receiving cavity 101 , the first peripheral wall 112 and the second peripheral wall 122 are enclosed to form the annular peripheral wall 102 ; the first support portion 113 and the second support portion 123 are stacked to form a base.
  • the support part 103, the first extension arm 114 and the second extension arm 124 form the extension arm 104 of the base, and the support part 103 and the extension arm 104 form a support structure; the first sub-cavity 115 communicates with the second sub-cavity 125 to form a cavity 105.
  • the extension arm 104 can be used to provide certain support and protection to the diaphragm structure 30 when the diaphragm structure 30 is greatly deformed, so as to prevent the diaphragm structure 30 from being broken.
  • the first through hole 116 and the second through hole 126 form the through hole 106 of the support portion 103 , that is, the support portion 103 has a circular cylindrical structure;
  • the force generates a voltage output, which further improves the overall sensitivity of the piezoelectric MEMS unit 1 and reduces the influence on the sound pressure entering the air inlet.
  • the diaphragm structure 30 is an integral structure, including a fixed area 301 and a plurality of movable parts 302, the fixed area 301 includes an anchoring part 303 and a plurality of anchoring arms 304 arranged at intervals, each of the anchoring arms 304 Formed radially extending from the edge of the anchor portion 303 , the anchor portion 303 is fixed to the support portion 103 , the anchor arm 304 is fixed to the extension arm 104 , and each movable portion 302 surrounds The anchoring portion 303 is spaced apart from the anchoring arm 304 .
  • the diaphragm structure 30 of the piezoelectric MEMS unit 1 is fixed on the supporting structure of the substrate 10 through the anchoring portion 303 and several anchoring arms 304 radially extending from the edge of the anchoring portion 303 , and the diaphragm structure is enlarged.
  • the contact area between the film structure 30 and the substrate 10 is reduced, thereby effectively reducing the risk of peeling off the membrane structure 30 from the substrate 10 .
  • the orthographic projection of the movable portion 302 along the axial direction of the base 10 falls into the cavity 105 .
  • a movable portion 302 is suspended above each cavity 105 , and the projected contour of each movable portion 302 in the direction perpendicular to the diaphragm structure 30 is located at the position of the corresponding cavity 105 in the direction perpendicular to the diaphragm structure 30 . within the projected contour.
  • the projected contour of the inner side wall of the annular peripheral wall 102 in the direction perpendicular to the diaphragm structure 30 can be a circle or a polygon, and the number of the extension arms 104 can be set according to actual needs, and the specific number is not limited. As a preferred embodiment, the number of the extension arms 104 is four.
  • the projected contours of the inner sidewall of the annular peripheral wall 102 and the outer sidewall of the support portion 103 in the base 10 in the direction perpendicular to the diaphragm structure 30 are both circular; the anchor portion 303 is in the direction perpendicular to the diaphragm structure 30
  • the projected outline of the anchor arm 304 in the direction perpendicular to the diaphragm structure 30 is in the shape of a strip; the projected outline of the single movable part 302 in the direction perpendicular to the diaphragm structure 30 is in the shape of a fan ring.
  • the diaphragm structure 30 is formed by stacking at least three layers of materials.
  • the diaphragm structure 30 includes a first electrode layer 31, a first piezoelectric layer 32, and a second electrode layer 33 that are stacked in sequence along the vibration direction; or, the diaphragm structure 30 includes sequentially stacked along the vibration direction.
  • the first electrode layer 31 is disposed on the side of the diaphragm structure 30 close to the support structure.
  • the first electrode layer 31 includes a first electrode sheet 311 located at the movable portion 302 , a second electrode sheet 312 located at the anchor portion 303 and a third electrode located at the anchor arm 304
  • the sheet 313, the first electrode sheet 311, the second electrode sheet 312, and the third electrode sheet 313 are spaced apart from each other, and have a circular structure as a whole.
  • the second electrode layer 33 and the third electrode layer 35 have the same structure as the first electrode layer 31 .
  • the second electrode layer 33 includes a fourth electrode sheet located at the movable portion 302 , a fifth electrode sheet located at the anchor portion 303 and a sixth electrode sheet located at the anchor arm 304 .
  • the electrode sheet, the fifth electrode sheet, and the sixth electrode sheet are spaced apart from each other.
  • the third electrode layer 35 includes a seventh electrode sheet located at the movable portion 302, an eighth electrode sheet located at the anchor portion 303, and a ninth electrode sheet located at the anchor arm 304.
  • the seventh electrode sheet is located at the anchor arm 304.
  • the electrode sheet, the eighth electrode sheet, and the ninth electrode sheet are spaced apart from each other.
  • the first piezoelectric layer 32 includes a first movable portion 321 located in the movable portion 302 and a first fixed region 322 located in the fixed region 301 .
  • the first movable portion 321 is connected to the first movable portion 321 .
  • a fixed area 322 is connected.
  • the first piezoelectric layer 32 is integrally formed and has a circular structure as a whole, that is, the first movable portion 321 is connected to the first fixed region 322 , which improves the reliability of the diaphragm structure 30 .
  • the second piezoelectric layer 34 has the same structure as the first piezoelectric layer 32 .
  • the second piezoelectric layer 34 includes a second movable portion located in the movable portion 302 and a second fixed region located in the fixed region 301 , and the second movable portion is connected to the second fixed region.

Abstract

The present application provides a piezoelectric MEMS microphone, comprising at least one piezoelectric MEMS unit. The piezoelectric MEMS unit comprises: a substrate, which comprises an annular peripheral wall defining an accommodation cavity, and a support structure arranged in the accommodation cavity; and a film structure, which is partially fixed to the support structure. The support structure comprises a support portion that is arranged spaced apart from the peripheral wall, and several extending arms extending to the support portion from the peripheral wall, wherein one end of each extending arm is connected to the support portion, and the other end thereof is connected to the peripheral wall so as to divide the accommodation cavity into several cavities; and a through hole penetrating the support portion is formed in the support portion in a vibration direction. The support structure in the present application comprises a support portion that is arranged spaced apart from the peripheral wall, and several extending arms extending to the support portion from the peripheral wall. The sound pressure at an air inlet is improved by providing a through hole in the support portion.

Description

压电MEMS麦克风Piezoelectric MEMS Microphone 技术领域technical field
本申请涉及声电技术领域,尤其涉及一种压电MEMS麦克风。The present application relates to the technical field of acoustics and electricity, and in particular, to a piezoelectric MEMS microphone.
背景技术Background technique
现有的压电MEMS单元,包括基底、支撑件和压电膜片,其中,支撑件包括四个支撑梁结构和支撑柱,压电膜片包括四个与支撑梁结构对应的悬臂梁膜片,压电膜片固定在基底中心位置的支撑柱上,悬臂梁膜片在声压的作用下其末端发生翘曲,使压电膜片中的压电层受力产生电压输出,由于支撑柱的面积较大,该支撑柱上方的压电膜片几乎无电压输出;另外,当贴片到PCB上时将会影响进气口的声压的进入。The existing piezoelectric MEMS unit includes a base, a support and a piezoelectric diaphragm, wherein the support includes four support beam structures and a support column, and the piezoelectric diaphragm includes four cantilever beam diaphragms corresponding to the support beam structures , the piezoelectric diaphragm is fixed on the support column at the center of the base, and the end of the cantilever beam diaphragm is warped under the action of sound pressure, so that the piezoelectric layer in the piezoelectric diaphragm is stressed to generate voltage output. The area is large, and the piezoelectric diaphragm above the support column has almost no voltage output; in addition, when the patch is placed on the PCB, it will affect the entry of the sound pressure of the air inlet.
技术问题technical problem
本申请的目的在于提供了一种改善进气口声压、且进一步提升灵敏度的MEMS麦克风芯片。The purpose of the present application is to provide a MEMS microphone chip that improves the sound pressure of the air inlet and further improves the sensitivity.
技术解决方案technical solutions
为达到上述目的,本申请提供了一种压电MEMS麦克风,包括至少一个压电MEMS单元,所述压电MEMS单元包括:基底,包括围成收容腔的环形周壁和设于所述收容腔内的支撑结构;膜片结构,部分固定于所述支撑结构;所述支撑结构,包括与所述周壁间隔设置的支撑部及自所述周壁延伸至所述支撑部的若干个延伸臂;所述延伸臂的一端与所述支撑部连接、另一端与所述周壁连接从而将所述收容腔分隔成若干个腔体;所述支撑部沿振动方向形成有贯通所述支撑部的通孔。In order to achieve the above purpose, the present application provides a piezoelectric MEMS microphone, comprising at least one piezoelectric MEMS unit, the piezoelectric MEMS unit comprising: a substrate, including an annular peripheral wall surrounding a receiving cavity and a the supporting structure; the diaphragm structure is partially fixed to the supporting structure; the supporting structure includes a supporting portion spaced from the peripheral wall and a number of extension arms extending from the peripheral wall to the supporting portion; the One end of the extension arm is connected to the support part, and the other end is connected to the peripheral wall to divide the receiving cavity into several cavities; the support part is formed with a through hole penetrating the support part along the vibration direction.
优选的,所述基底包括第一基板,所述收容腔包括形成于所述第一基板的第一腔体,所述周壁包括围成所述第一腔体的第一周壁,所述支撑部包括设于所述第一腔体并与所述第一周壁间隔设置的第一支撑部,若干所述延伸臂包括自所述第一周壁延伸至所述第一支撑部的若干第一延伸臂,所述通孔包括沿振动方向形成有贯通所述第一支撑部的第一通孔。Preferably, the base includes a first substrate, the receiving cavity includes a first cavity formed on the first substrate, the peripheral wall includes a first peripheral wall surrounding the first cavity, and the support The portion includes a first support portion disposed in the first cavity and spaced apart from the first peripheral wall, and a plurality of the extension arms include a plurality of first support portions extending from the first peripheral wall to the first support portion. An extension arm, the through hole includes a first through hole formed along the vibration direction and penetrating the first support portion.
优选的,所述基底还包括设于所述第一基板与所述膜片结构之间的隔离层,所述隔离层沿所述振动方向的投影轮廓与所述第一基板沿所述振动方向的投影轮廓形状相同。Preferably, the base further includes an isolation layer disposed between the first substrate and the diaphragm structure, and the projection profile of the isolation layer along the vibration direction is the same as that of the first substrate along the vibration direction. The projected contour shape of .
优选的,所述膜片结构为一体结构,包括固定区域和若干个活动部,所述固定区域包括锚定部和自所述锚定部的边缘径向延伸形成的若干个锚定臂,所述锚定部固定于所述支撑部,所述锚定臂固定于所述延伸臂,每个所述活动部环绕所述锚定部、且与所述锚定臂间隔设置。Preferably, the diaphragm structure is an integrated structure, including a fixed area and several movable parts, the fixed area includes an anchor part and several anchor arms radially extending from the edge of the anchor part, so The anchor portion is fixed to the support portion, the anchor arm is fixed to the extension arm, and each movable portion surrounds the anchor portion and is spaced from the anchor arm.
优选的,所述固定区域设于所述支撑结构的上方,所述活动部沿所述基底的轴向的正投影落入所述腔体内。Preferably, the fixed area is provided above the support structure, and the movable portion falls into the cavity along the orthographic projection of the axial direction of the base.
优选的,所述膜片结构沿振动方向包括依次层叠的第一电极层、第一压电层和第二电极层,所述第一电极层设置于所述膜片结构靠近所述支撑结构的一侧。Preferably, the diaphragm structure includes a first electrode layer, a first piezoelectric layer and a second electrode layer stacked in sequence along the vibration direction, and the first electrode layer is disposed on the diaphragm structure close to the support structure. side.
优选的,所述膜片结构还包括叠设在所述第二电极层的远离所述第一压电层的一侧的第二压电层以及叠设在所述第二压电层上的第三电极层。Preferably, the diaphragm structure further includes a second piezoelectric layer stacked on a side of the second electrode layer away from the first piezoelectric layer, and a second piezoelectric layer stacked on the second piezoelectric layer the third electrode layer.
优选的,多个所述压电MEMS单元呈阵列结构分布。Preferably, a plurality of the piezoelectric MEMS units are distributed in an array structure.
有益效果beneficial effect
本申请的有益效果在于提供了一种压电MEMS麦克风,其支撑结构,包括与周壁间隔设置的支撑部及自周壁延伸至所述支撑部的若干个延伸臂;通过在支撑部中设置通孔改善进气口声压,且进一步提升灵敏度。The beneficial effect of the present application is to provide a piezoelectric MEMS microphone, the support structure of which includes a support portion spaced from a peripheral wall and a plurality of extension arms extending from the peripheral wall to the support portion; by arranging through holes in the support portion The sound pressure of the air intake is improved, and the sensitivity is further improved.
附图说明Description of drawings
图1为本发明的实施例的压电MEMS单元的结构示意图;1 is a schematic structural diagram of a piezoelectric MEMS unit according to an embodiment of the present invention;
图2为本发明的实施例的压电MEMS单元的主视图;2 is a front view of a piezoelectric MEMS unit according to an embodiment of the present invention;
图3为本发明的实施例的压电MEMS单元的立体图;3 is a perspective view of a piezoelectric MEMS unit according to an embodiment of the present invention;
图4为本发明的实施例的压电MEMS单元的仰视图;4 is a bottom view of a piezoelectric MEMS unit according to an embodiment of the present invention;
图5为图3中沿A-A方向的剖视图;5 is a cross-sectional view along the A-A direction in FIG. 3;
图6为本发明的实施例的基底的结构示意图;6 is a schematic structural diagram of a substrate according to an embodiment of the present invention;
图7为本发明的实施例的基底的立体图;7 is a perspective view of a substrate according to an embodiment of the present invention;
图8为本发明的实施例的第一基板的结构示意图;8 is a schematic structural diagram of a first substrate according to an embodiment of the present invention;
图9为本发明的实施例的隔离层的结构示意图;9 is a schematic structural diagram of an isolation layer according to an embodiment of the present invention;
图10为本发明的实施例的膜片结构的结构示意图;10 is a schematic structural diagram of a diaphragm structure according to an embodiment of the present invention;
图11为本发明的实施例的第一电极层的结构示意图;11 is a schematic structural diagram of a first electrode layer according to an embodiment of the present invention;
图12为本发明的实施例的第一压电层的结构示意图。FIG. 12 is a schematic structural diagram of a first piezoelectric layer according to an embodiment of the present invention.
本发明的实施方式Embodiments of the present invention
下面结合附图和实施方式对本申请作进一步说明。The present application will be further described below with reference to the accompanying drawings and embodiments.
需要说明的是,本申请实施例中所有方向性指示(诸如上、下、左、右、前、后、内、外、顶部、底部……)仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系等,如果该特定姿态发生改变时,则该方向性指示也相应地随之改变。It should be noted that all directional indications (such as up, down, left, right, front, back, inside, outside, top, bottom...) in the embodiments of the present application are only used to explain the As shown in the figure), the relative positional relationship between the components, etc., if the specific posture changes, the directional indication also changes accordingly.
参见图1至12,本申请提供一种压电MEMS麦克风,压电MEMS麦克风包括若干个压电MEMS单元1,并且若干个压电MEMS单元1呈阵列结构分布,在本实施例中,压电MEMS单元1设有4个,其呈2*2阵列结构分布,当然在保证一定的灵敏度或信噪比,压电MEMS单元1也可为3*3阵列结构分布,4*4阵列结构分布或者更多阵列式结构。1 to 12, the present application provides a piezoelectric MEMS microphone. The piezoelectric MEMS microphone includes several piezoelectric MEMS units 1, and the several piezoelectric MEMS units 1 are distributed in an array structure. There are four MEMS units 1, which are distributed in a 2*2 array structure. Of course, to ensure a certain sensitivity or signal-to-noise ratio, the piezoelectric MEMS unit 1 can also be a 3*3 array structure distribution, a 4*4 array structure distribution, or More array-like structures.
参见图1至图5,压电MEMS单元1,包括基底10和膜片结构30,方形的基底10具有收容腔101;所述膜片结构30形成在所述基底10的上方。Referring to FIG. 1 to FIG. 5 , the piezoelectric MEMS unit 1 includes a substrate 10 and a diaphragm structure 30 . The square substrate 10 has a receiving cavity 101 ; the diaphragm structure 30 is formed above the substrate 10 .
参见图6和图7,所述基底10,包括围成收容腔101的环形周壁102和设于收容腔101内的支撑结构;所述支撑结构,包括与周壁102间隔设置的支撑部103及自周壁102延伸至支撑部103的若干延伸臂104,其中,支撑部103设于收容腔101的中心位置。延伸臂104的一端与支撑部103连接,延伸臂104的另一端与周壁102连接从而将收容腔101分隔成若干个沿延伸臂104的周向间隔设置的腔体105。Referring to FIGS. 6 and 7 , the base 10 includes an annular peripheral wall 102 surrounding the receiving cavity 101 and a supporting structure disposed in the receiving cavity 101 ; the supporting structure includes a supporting portion 103 disposed at intervals from the peripheral wall 102 and a self-supporting structure. The peripheral wall 102 extends to a plurality of extending arms 104 of the support portion 103 , wherein the support portion 103 is disposed at the center of the receiving cavity 101 . One end of the extension arm 104 is connected to the support portion 103 , and the other end of the extension arm 104 is connected to the peripheral wall 102 to divide the receiving cavity 101 into a plurality of cavities 105 spaced along the circumference of the extension arm 104 .
所述基底10包括第一基板11和设于所述第一基板11与所述膜片结构30之间的隔离层12。The base 10 includes a first substrate 11 and an isolation layer 12 disposed between the first substrate 11 and the diaphragm structure 30 .
参见图8,第一基板11包括围成第一腔体111的第一周壁112,设于第一腔体111并与第一周壁112间隔设置的第一支撑部113及自第一周壁112延伸至第一支撑部113的第一延伸臂114,第一支撑部113设于第一腔体111的中心位置,第一支撑部113和第一延伸臂114构成第一支撑结构;第一延伸臂114的一端与第一支撑部113连接,第一延伸臂114的另一端与第一周壁112连接从而将第一腔体111分隔成若干个沿第一延伸臂114的周向间隔设置的第一子腔体115;其中,所述第一支撑部113沿振动方向形成有贯通所述第一支撑部113的第一通孔116,该第一通孔116通过刻蚀形成。Referring to FIG. 8 , the first substrate 11 includes a first peripheral wall 112 surrounding the first cavity 111 , a first supporting portion 113 disposed in the first cavity 111 and spaced from the first peripheral wall 112 , and a first supporting portion 113 from the first peripheral The wall 112 extends to the first extension arm 114 of the first support portion 113, the first support portion 113 is arranged at the center of the first cavity 111, and the first support portion 113 and the first extension arm 114 constitute a first support structure; One end of an extension arm 114 is connected to the first support portion 113 , and the other end of the first extension arm 114 is connected to the first peripheral wall 112 to divide the first cavity 111 into a plurality of circumferential intervals along the first extension arm 114 The first sub-cavity 115 is provided; wherein, the first support portion 113 is formed with a first through hole 116 penetrating the first support portion 113 along the vibration direction, and the first through hole 116 is formed by etching.
参见图9,隔离层12包括围成第二腔体121的第二周壁122,设于第二腔体121并与第二周壁122间隔设置的第二支撑部123及自第二周壁122延伸至第二支撑部123的第二延伸臂124,第二支撑部123设于第二腔体121的中心位置,第二支撑部123和第二延伸臂124构成第二支撑结构;第二延伸臂124的一端与第二支撑部123连接,第二延伸臂124的另一端与第二周壁122连接从而将第二腔体121分隔成若干个沿第二延伸臂124的周向间隔设置的第二子腔体125;其中,所述第二支撑部123沿振动方向形成有贯通所述第二支撑部123的第二通孔126,该第二通孔126通过刻蚀形成。Referring to FIG. 9 , the isolation layer 12 includes a second peripheral wall 122 surrounding the second cavity 121 , a second supporting portion 123 disposed in the second cavity 121 and spaced from the second peripheral wall 122 , and extending from the second peripheral wall 122 to The second extension arm 124 of the second support portion 123 is arranged at the center of the second cavity 121 , and the second support portion 123 and the second extension arm 124 constitute a second support structure; the second extension arm 124 One end of the second extending arm 124 is connected to the second supporting portion 123 , and the other end of the second extending arm 124 is connected to the second peripheral wall 122 , thereby dividing the second cavity 121 into a plurality of second sub-sections spaced along the circumferential direction of the second extending arm 124 Cavity 125; wherein, the second support portion 123 is formed with a second through hole 126 penetrating the second support portion 123 along the vibration direction, and the second through hole 126 is formed by etching.
第一腔体111与第二腔体121连通形成收容腔101,第一周壁112和第二周壁122围合形成环形周壁102;第一支撑部113与第二支撑部123叠设形成基底的支撑部103,第一延伸臂114与第二延伸臂124形成基底的延伸臂104,支撑部103和延伸臂104构成支撑结构;第一子腔体115与第二子腔体125连通形成腔体105。延伸臂104可用于在膜片结构30产生较大形变时对膜片结构30提供一定的支撑保护,防止膜片结构30发生折断。The first cavity 111 communicates with the second cavity 121 to form the receiving cavity 101 , the first peripheral wall 112 and the second peripheral wall 122 are enclosed to form the annular peripheral wall 102 ; the first support portion 113 and the second support portion 123 are stacked to form a base. The support part 103, the first extension arm 114 and the second extension arm 124 form the extension arm 104 of the base, and the support part 103 and the extension arm 104 form a support structure; the first sub-cavity 115 communicates with the second sub-cavity 125 to form a cavity 105. The extension arm 104 can be used to provide certain support and protection to the diaphragm structure 30 when the diaphragm structure 30 is greatly deformed, so as to prevent the diaphragm structure 30 from being broken.
第一通孔116与第二通孔126形成支撑部103的通孔106,即支撑部103为圆环柱体结构;通过在支撑部103中设置通孔106使位于其上方的膜片结构30受力产生电压输出,使压电MEMS单元1整体的灵敏度进一步提升,同时减小对进气口的声压进入的影响。The first through hole 116 and the second through hole 126 form the through hole 106 of the support portion 103 , that is, the support portion 103 has a circular cylindrical structure; The force generates a voltage output, which further improves the overall sensitivity of the piezoelectric MEMS unit 1 and reduces the influence on the sound pressure entering the air inlet.
所述膜片结构30为一体结构,包括固定区域301和若干个活动部302,所述固定区域301包括锚定部303和若干个间隔设置的锚定臂304,每一所述锚定臂304自所述锚定部303的边缘径向延伸形成,所述锚定部303固定于所述支撑部103,所述锚定臂304固定于所述延伸臂104,每个所述活动部302环绕所述锚定部303、且与所述锚定臂304间隔设置。The diaphragm structure 30 is an integral structure, including a fixed area 301 and a plurality of movable parts 302, the fixed area 301 includes an anchoring part 303 and a plurality of anchoring arms 304 arranged at intervals, each of the anchoring arms 304 Formed radially extending from the edge of the anchor portion 303 , the anchor portion 303 is fixed to the support portion 103 , the anchor arm 304 is fixed to the extension arm 104 , and each movable portion 302 surrounds The anchoring portion 303 is spaced apart from the anchoring arm 304 .
压电MEMS单元1的膜片结构30通过锚定部303和自所述锚定部303的边缘径向延伸形成的若干个锚定臂304固定在基底10的支撑结构上,加大膜片结构30与基底10的接触面积,从而有效降低膜片结构30从基底10上剥落的风险。The diaphragm structure 30 of the piezoelectric MEMS unit 1 is fixed on the supporting structure of the substrate 10 through the anchoring portion 303 and several anchoring arms 304 radially extending from the edge of the anchoring portion 303 , and the diaphragm structure is enlarged. The contact area between the film structure 30 and the substrate 10 is reduced, thereby effectively reducing the risk of peeling off the membrane structure 30 from the substrate 10 .
在本实施例中,所述活动部302沿所述基底10的轴向的正投影落入所述腔体105内。具体的,每个腔体105的上方悬置一个活动部302,每一活动部302在垂直于膜片结构30方向上的投影轮廓位于对应的腔体105在垂直于膜片结构30方向上的投影轮廓以内。In this embodiment, the orthographic projection of the movable portion 302 along the axial direction of the base 10 falls into the cavity 105 . Specifically, a movable portion 302 is suspended above each cavity 105 , and the projected contour of each movable portion 302 in the direction perpendicular to the diaphragm structure 30 is located at the position of the corresponding cavity 105 in the direction perpendicular to the diaphragm structure 30 . within the projected contour.
在本实施例中,环形周壁102的内侧壁在垂直于膜片结构30方向上的投影轮廓可以为圆形或者多边形,延伸臂104的数量可根据实际需要进行设置,具体的数量不做限制,作为优选地实施方式,延伸臂104的数量为四个。In this embodiment, the projected contour of the inner side wall of the annular peripheral wall 102 in the direction perpendicular to the diaphragm structure 30 can be a circle or a polygon, and the number of the extension arms 104 can be set according to actual needs, and the specific number is not limited. As a preferred embodiment, the number of the extension arms 104 is four.
在本实施例中,基底10中环形周壁102的内侧壁和支撑部103的外侧壁在垂直于膜片结构30方向上的投影轮廓均为圆形;锚定部303在垂直膜片结构30方向上的投影轮廓呈圆形,锚定臂304在垂直膜片结构30方向上的投影轮廓呈条形;单个活动部302在垂直膜片结构30方向上的投影轮廓呈扇环形。In this embodiment, the projected contours of the inner sidewall of the annular peripheral wall 102 and the outer sidewall of the support portion 103 in the base 10 in the direction perpendicular to the diaphragm structure 30 are both circular; the anchor portion 303 is in the direction perpendicular to the diaphragm structure 30 The projected outline of the anchor arm 304 in the direction perpendicular to the diaphragm structure 30 is in the shape of a strip; the projected outline of the single movable part 302 in the direction perpendicular to the diaphragm structure 30 is in the shape of a fan ring.
所述膜片结构30至少由三层材料堆叠而成。可选地,所述膜片结构30沿振动方向包括依次层叠的第一电极层31、第一压电层32和第二电极层33;或者,所述膜片结构30沿振动方向包括依次层叠的第一电极层31、第一压电层32、第二电极层33、第二压电层34和第三电极层35;或者,其他任何电极层与压电层叠加而形成的膜片结构,同样适用于本申请。其中,所述第一电极层31设置于所述膜片结构30靠近所述支撑结构的一侧。The diaphragm structure 30 is formed by stacking at least three layers of materials. Optionally, the diaphragm structure 30 includes a first electrode layer 31, a first piezoelectric layer 32, and a second electrode layer 33 that are stacked in sequence along the vibration direction; or, the diaphragm structure 30 includes sequentially stacked along the vibration direction. The first electrode layer 31, the first piezoelectric layer 32, the second electrode layer 33, the second piezoelectric layer 34 and the third electrode layer 35; , the same applies to this application. Wherein, the first electrode layer 31 is disposed on the side of the diaphragm structure 30 close to the support structure.
参见图11,所述第一电极层31包括位于所述活动部302的第一电极片311、位于所述锚定部303的第二电极片312和位于所述锚定臂304的第三电极片313,所述第一电极片311、所述第二电极片312、第三电极片313彼此间隔设置,整体呈圆形结构。所述第二电极层33、第三电极层35与所述第一电极层31结构相同。Referring to FIG. 11 , the first electrode layer 31 includes a first electrode sheet 311 located at the movable portion 302 , a second electrode sheet 312 located at the anchor portion 303 and a third electrode located at the anchor arm 304 The sheet 313, the first electrode sheet 311, the second electrode sheet 312, and the third electrode sheet 313 are spaced apart from each other, and have a circular structure as a whole. The second electrode layer 33 and the third electrode layer 35 have the same structure as the first electrode layer 31 .
所述第二电极层33包括位于所述活动部302的第四电极片、位于所述锚定部303的第五电极片和位于所述锚定臂304的第六电极片,所述第四电极片、所述第五电极片、第六电极片彼此间隔设置。The second electrode layer 33 includes a fourth electrode sheet located at the movable portion 302 , a fifth electrode sheet located at the anchor portion 303 and a sixth electrode sheet located at the anchor arm 304 . The electrode sheet, the fifth electrode sheet, and the sixth electrode sheet are spaced apart from each other.
所述第三电极层35包括位于所述活动部302的第七电极片、位于所述锚定部303的第八电极片和位于所述锚定臂304的第九电极片,所述第七电极片、所述第八电极片、第九电极片彼此间隔设置。The third electrode layer 35 includes a seventh electrode sheet located at the movable portion 302, an eighth electrode sheet located at the anchor portion 303, and a ninth electrode sheet located at the anchor arm 304. The seventh electrode sheet is located at the anchor arm 304. The electrode sheet, the eighth electrode sheet, and the ninth electrode sheet are spaced apart from each other.
参见图12,所述第一压电层32包括位于所述活动部302的第一活动部321和位于所述固定区域301的第一固定区域322,所述第一活动部321与所述第一固定区域322相连。所述第一压电层32一体成型,整体呈圆形结构,即第一活动部321与第一固定区域322相连,提升膜片结构30的可靠性。所述第二压电层34与所述第一压电层32结构相同。Referring to FIG. 12 , the first piezoelectric layer 32 includes a first movable portion 321 located in the movable portion 302 and a first fixed region 322 located in the fixed region 301 . The first movable portion 321 is connected to the first movable portion 321 . A fixed area 322 is connected. The first piezoelectric layer 32 is integrally formed and has a circular structure as a whole, that is, the first movable portion 321 is connected to the first fixed region 322 , which improves the reliability of the diaphragm structure 30 . The second piezoelectric layer 34 has the same structure as the first piezoelectric layer 32 .
所述第二压电层34包括位于所述活动部302的第二活动部和位于所述固定区域301的第二固定区域,所述第二活动部与所述第二固定区域相连。The second piezoelectric layer 34 includes a second movable portion located in the movable portion 302 and a second fixed region located in the fixed region 301 , and the second movable portion is connected to the second fixed region.
以上所述的仅是本申请的实施方式,在此应当指出,对于本领域的普通技术人员来说,在不脱离本申请创造构思的前提下,还可以做出改进,但这些均属于本申请的保护范围。The above are only the embodiments of the present application. It should be pointed out that for those of ordinary skill in the art, improvements can be made without departing from the creative concept of the present application, but these belong to the present application. scope of protection.

Claims (8)

1、一种压电MEMS麦克风,包括至少一个压电MEMS单元,所述压电MEMS单元包括:基底,包括围成收容腔的环形周壁和设于所述收容腔内的支撑结构;膜片结构,部分固定于所述支撑结构;其特征在于:所述支撑结构,包括与所述周壁间隔设置的支撑部及自所述周壁延伸至所述支撑部的若干个延伸臂;所述延伸臂的一端与所述支撑部连接、另一端与所述周壁连接从而将所述收容腔分隔成若干个腔体;所述支撑部沿振动方向形成有贯通所述支撑部的通孔。1. A piezoelectric MEMS microphone, comprising at least one piezoelectric MEMS unit, the piezoelectric MEMS unit comprising: a substrate, including an annular peripheral wall enclosing a receiving cavity and a support structure arranged in the receiving cavity; a diaphragm structure , which is partially fixed to the support structure; it is characterized in that: the support structure includes a support part spaced from the peripheral wall and a plurality of extension arms extending from the peripheral wall to the support part; One end is connected to the support part, and the other end is connected to the peripheral wall to divide the receiving cavity into several cavities; the support part is formed with a through hole penetrating the support part along the vibration direction.
2、根据权利要求1所述的压电MEMS麦克风,其特征在于:所述基底包括第一基板,所述收容腔包括形成于所述第一基板的第一腔体,所述周壁包括围成所述第一腔体的第一周壁,所述支撑部包括设于所述第一腔体并与所述第一周壁间隔设置的第一支撑部,若干所述延伸臂包括自所述第一周壁延伸至所述第一支撑部的若干第一延伸臂,所述通孔包括沿振动方向形成有贯通所述第一支撑部的第一通孔。2. The piezoelectric MEMS microphone according to claim 1, wherein the base comprises a first substrate, the receiving cavity comprises a first cavity formed on the first substrate, and the peripheral wall comprises a surrounding wall. The first peripheral wall of the first cavity, the support portion includes a first support portion disposed in the first cavity and spaced apart from the first peripheral wall, and a plurality of the extension arms include a plurality of extending arms from the The first peripheral wall extends to a plurality of first extension arms of the first support portion, and the through hole includes a first through hole formed through the first support portion along the vibration direction.
3、根据权利要求2所述的压电MEMS麦克风,其特征在于:所述基底还包括设于所述第一基板与所述膜片结构之间的隔离层,所述隔离层沿所述振动方向的投影轮廓与所述第一基板沿所述振动方向的投影轮廓形状相同。3. The piezoelectric MEMS microphone according to claim 2, wherein the base further comprises an isolation layer disposed between the first substrate and the diaphragm structure, and the isolation layer vibrates along the The projected profile of the direction has the same shape as the projected profile of the first substrate along the vibration direction.
4、根据权利要求1所述的压电MEMS麦克风,其特征在于:所述膜片结构为一体结构,包括固定区域和若干个活动部,所述固定区域包括锚定部和自所述锚定部的边缘径向延伸形成的若干个锚定臂,所述锚定部固定于所述支撑部,所述锚定臂固定于所述延伸臂,每个所述活动部环绕所述锚定部、且与所述锚定臂间隔设置。4. The piezoelectric MEMS microphone according to claim 1, wherein the diaphragm structure is an integral structure, comprising a fixed area and a plurality of movable parts, and the fixed area includes an anchoring part and a self-anchoring part Several anchoring arms formed by radially extending from the edge of the part, the anchoring parts are fixed to the supporting part, the anchoring arms are fixed to the extending arms, and each movable part surrounds the anchoring part , and is spaced from the anchor arm.
5、根据权利要求4所述的压电MEMS麦克风,其特征在于:所述固定区域设于所述支撑结构的上方,所述活动部沿所述基底的轴向的正投影落入所述腔体内。5. The piezoelectric MEMS microphone according to claim 4, wherein the fixed area is disposed above the support structure, and the movable portion falls into the cavity along the orthographic projection of the axial direction of the substrate in vivo.
6、根据权利要求4所述的压电MEMS麦克风,其特征在于:所述膜片结构沿振动方向包括依次层叠的第一电极层、第一压电层和第二电极层,所述第一电极层设置于所述膜片结构靠近所述支撑结构的一侧。6. The piezoelectric MEMS microphone according to claim 4, wherein the diaphragm structure comprises a first electrode layer, a first piezoelectric layer and a second electrode layer stacked in sequence along the vibration direction, the first electrode layer The electrode layer is disposed on the side of the membrane structure close to the support structure.
7、根据权利要求6所述的压电MEMS麦克风,其特征在于:所述膜片结构还包括叠设在所述第二电极层的远离所述第一压电层的一侧的第二压电层以及叠设在所述第二压电层上的第三电极层。7. The piezoelectric MEMS microphone according to claim 6, wherein the diaphragm structure further comprises a second piezoelectric layer stacked on a side of the second electrode layer away from the first piezoelectric layer. an electrical layer and a third electrode layer stacked on the second piezoelectric layer.
8、根据权利要求7所述的压电MEMS麦克风,其特征在于:多个所述压电MEMS单元呈阵列结构分布8. The piezoelectric MEMS microphone according to claim 7, wherein a plurality of the piezoelectric MEMS units are distributed in an array structure
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150195659A1 (en) * 2014-01-09 2015-07-09 Knowles Electronics, Llc Interposer For MEMS-On-Lid MIcirophone
CN110099344A (en) * 2019-05-18 2019-08-06 安徽奥飞声学科技有限公司 A kind of MEMS structure
CN110545511A (en) * 2019-08-16 2019-12-06 瑞声声学科技(深圳)有限公司 Piezoelectric MEMS microphone
CN209748812U (en) * 2019-05-18 2019-12-06 安徽奥飞声学科技有限公司 MEMS structure
CN110650420A (en) * 2019-08-16 2020-01-03 瑞声声学科技(深圳)有限公司 Piezoelectric MEMS microphone
CN111225330A (en) * 2019-12-31 2020-06-02 瑞声科技(南京)有限公司 Piezoelectric MEMS microphone and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150195659A1 (en) * 2014-01-09 2015-07-09 Knowles Electronics, Llc Interposer For MEMS-On-Lid MIcirophone
CN110099344A (en) * 2019-05-18 2019-08-06 安徽奥飞声学科技有限公司 A kind of MEMS structure
CN209748812U (en) * 2019-05-18 2019-12-06 安徽奥飞声学科技有限公司 MEMS structure
CN110545511A (en) * 2019-08-16 2019-12-06 瑞声声学科技(深圳)有限公司 Piezoelectric MEMS microphone
CN110650420A (en) * 2019-08-16 2020-01-03 瑞声声学科技(深圳)有限公司 Piezoelectric MEMS microphone
CN111225330A (en) * 2019-12-31 2020-06-02 瑞声科技(南京)有限公司 Piezoelectric MEMS microphone and preparation method thereof

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