WO2022104802A1 - Pulse setting method for phase change memory - Google Patents
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- the present invention relates to the field of semiconductor equipment, in particular to a pulse setting method of a phase change memory.
- the operation of the phase change memory is determined by an applied pulse current, so that the phase change material is switched between an amorphous state and a crystalline state.
- the durability of the phase change memory will be degraded, and the phenomenon of atomic migration is the main cause of the deterioration of the durability of the phase change memory.
- Electron wind and electrostatic force are the main causes of atomic migration.
- the GST phase change material due to the different composition of the active region material, it has different exchange characteristics.
- the electron wind and electrostatic force directions of Te atoms are different from those of Ge and Sb atoms, resulting in different enrichment positions of the three kinds of atoms, which eventually form voids and cause the phase change memory to have open circuit failures.
- Using a fixed pulse further exacerbates the cumulative effect of atomic migration.
- the setting method of the pulse current in the set state and the reset state has the same polarity, which improves the reliability of the phase change memory. reduce.
- the technical problem to be solved by the present invention is to provide a pulse setting method for a phase change memory, which solves the problem of the durability degradation of the phase change memory caused by the phenomenon of atomic migration.
- the present invention provides a pulse setting method for a phase change memory
- the phase change material of the phase change memory has an amorphous state and a crystalline state
- the two states of the phase change memory are alternated by an external pulse
- the current is realized, and the direction of the pulse current is alternately set, that is, the first pulse current converted from the crystalline state to the amorphous state and the second pulse current converted from the amorphous state to the crystalline state are mutually Reverse setting.
- the invention aims to alleviate the phenomenon of atomic migration of the phase change material by utilizing the different polarity of the pulse current in the set state and the reset state, so as to improve the reliability of the phase change memory. Since different atoms have different electron wind and electrostatic force directions, alternating the direction of the pulsed current can further avoid void formation and prolong the durability of the phase change memory.
- FIG. 1 is a schematic diagram of a phase change memory circuit according to an embodiment of the present invention.
- FIG. 2 is a schematic diagram of a pulse setting method according to a specific embodiment of the present invention.
- FIG. 3 is a schematic structural diagram of a phase change memory used in the method according to an embodiment of the present invention.
- FIG. 4 is a schematic diagram of atomic migration and atomic enrichment in the specific embodiment shown in FIG. 3 .
- FIG. 1 is a schematic diagram of a phase change memory circuit according to an embodiment of the present invention.
- the applied pulse current of the phase change memory is the pulse current input by the bit line.
- FIG. 2 is a schematic diagram of a pulse setting method according to a specific embodiment of the present invention.
- the phase change material of the phase change memory has an amorphous state and a crystalline state.
- the alternation of the above two states of the phase change memory is realized by an external pulse current, and the direction of the pulse current is set alternately, that is, from the crystalline state to the non-crystalline state.
- the first pulse current for the crystalline state conversion and the second pulse current for the conversion from the amorphous state to the crystalline state are arranged in opposite directions to each other.
- the first pulse current causes the phase change material to undergo a process of converting from the crystalline state to the amorphous state, that is, the amorphization of the phase change material.
- the phase change material is composed of The low resistance value is transformed into a high resistance value;
- the second pulse current causes the phase change material to undergo a process of transitioning from the amorphous state to the crystalline state, that is, the crystallization of the phase change material, during which the phase change material is composed of A high resistance value is converted to a low resistance value.
- the directions of the first pulse current and the second pulse current may be positive or negative.
- the first setting manner is set that the first pulse current is in the positive direction, and the second pulse current is in the negative direction.
- the first pulse current is set in a negative direction, and the second pulse current is in a positive direction.
- the pulse setting method of the phase change memory is first executed in the first setting mode, and then executed in the second setting mode, and the time for executing the first setting mode and the second setting mode same.
- the pulse setting method is performed alternately with the first setting method and the second setting method, firstly performing N times with the first setting method, and then performing alternately with the second setting method for N times, wherein N is Integer greater than 1.
- the pulse current executes the cycle of the first setting mode and the second setting mode, that is, the execution mode is "first, first, first, second, second" , second, first, first, first, second, second, second"..
- the execution manner of the pulse current may also be "first, second, first, second, first, second!.
- FIG. 3 is a schematic structural diagram of a phase change memory used in the method according to an embodiment of the present invention.
- the structure of the phase change memory includes a bottom electrode 41 , a substrate 42 , a heater 43 , a phase change material layer 44 and a top electrode 45 , and the heater 43 is used to heat the phase change material layer 44
- a heating point H is provided at the interface of the heater 43 and the phase change material layer 44 .
- the phase change material layer 44 of the phase change memory is a GST material layer.
- FIG. 4 is a schematic diagram of atomic migration and atomic enrichment in the specific embodiment shown in FIG. 3 .
- the material is composed of Te, Ge and Sb atoms, and has different exchange characteristics due to the different composition of the active region material.
- the electron wind and electrostatic force directions of Te atoms are different from those of Ge and Sb atoms, resulting in different enrichment positions of the three kinds of atoms, which eventually form voids and cause the phase change memory to have open circuit failures.
- the use of alternating pulses as described above can moderate the cumulative effects of atomic migration and atomic enrichment.
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Abstract
A pulse setting method for a phase change memory. A phase change material of the phase change memory has an amorphous state and a crystallized state. The alternation of the two states of the phase change memory is achieved by means of an external pulse current, the directions of the pulse currents are alternately set, that is, a first pulse current having a transition from the crystallized state to the amorphous state and a second pulse current having a transition from the amorphous state to the crystallized state are set in reverse to each other. By using different poles of pulse current in a set state and a reset state, the phenomenon of atomic migration of the phase change material is alleviated, so as to improve the reliability of the phase change memory. Because different atoms have different electronic wind and electrostatic force directions, alternating the directions of the pulse currents can further avoid void formation, and the durability of the phase change memory is prolonged.
Description
本发明涉及半导体设备领域，尤其涉及一种相变存储器的脉冲设定方法。The present invention relates to the field of semiconductor equipment, in particular to a pulse setting method of a phase change memory.
现有技术中，相变存储器的运行由外加脉冲电流决定，以使相变材料在非晶态和结晶态之间转换。随着脉冲电流的循环，相变存储器的耐久性会退化，而原子迁移现象是造成相变存储器耐久性退化的主要原因。电子风力和静电力则是原子迁移现象的主要成因。In the prior art, the operation of the phase change memory is determined by an applied pulse current, so that the phase change material is switched between an amorphous state and a crystalline state. With the cycling of pulsed current, the durability of the phase change memory will be degraded, and the phenomenon of atomic migration is the main cause of the deterioration of the durability of the phase change memory. Electron wind and electrostatic force are the main causes of atomic migration.
以GST相变材料为例，由于活性区材料成分不同，具有不同的交换特性。Te原子的电子风力和静电力方向与Ge和Sb原子不同，导致三种原子的富集位置不同，最终形成空洞，使相变存储器产生断路故障。使用固定的脉冲会进一步加剧原子迁移的累积效应。Taking the GST phase change material as an example, due to the different composition of the active region material, it has different exchange characteristics. The electron wind and electrostatic force directions of Te atoms are different from those of Ge and Sb atoms, resulting in different enrichment positions of the three kinds of atoms, which eventually form voids and cause the phase change memory to have open circuit failures. Using a fixed pulse further exacerbates the cumulative effect of atomic migration.
静电力与电子风力因素，可知电场越大或是电流密度越大，越容易造成GST材料的原子迁移，因此设定状态与复位状态脉冲电流同极性的设置方式，使相变存储器的可靠度降低。Due to electrostatic force and electronic wind factors, it can be seen that the larger the electric field or the larger the current density, the easier it is to cause the atomic migration of the GST material. Therefore, the setting method of the pulse current in the set state and the reset state has the same polarity, which improves the reliability of the phase change memory. reduce.
发明内容SUMMARY OF THE INVENTION
本发明所要解决的技术问题是提供一种相变存储器的脉冲设定方法，解决原子迁移现象导致的相变存储器耐久性退化的问题。The technical problem to be solved by the present invention is to provide a pulse setting method for a phase change memory, which solves the problem of the durability degradation of the phase change memory caused by the phenomenon of atomic migration.
为了解决上述问题，本发明提供了一种相变存储器的脉冲设定方法，所述相变存储器的相变材料具有非晶态和结晶态，所述相变存储器上述两状态的交替由外加脉冲电流实现，所述脉冲电流的方向交替设置，即从所述结晶态向所述非晶态转换的第一脉冲电流与从所述非晶态向所述结晶态转换的第二脉冲电流互为反向设置。In order to solve the above problems, the present invention provides a pulse setting method for a phase change memory, the phase change material of the phase change memory has an amorphous state and a crystalline state, and the two states of the phase change memory are alternated by an external pulse The current is realized, and the direction of the pulse current is alternately set, that is, the first pulse current converted from the crystalline state to the amorphous state and the second pulse current converted from the amorphous state to the crystalline state are mutually Reverse setting.
本发明旨在利用设定状态与复位状态脉冲电流不同极的方式，缓和相变材料原子迁移的现象，以提高相变存储器的可靠度。由于不同原子具有不同的电子风力和静电力方向，交替变化脉冲电流的方向可以进一步避免空洞形成，延长相变存储器的耐久性。The invention aims to alleviate the phenomenon of atomic migration of the phase change material by utilizing the different polarity of the pulse current in the set state and the reset state, so as to improve the reliability of the phase change memory. Since different atoms have different electron wind and electrostatic force directions, alternating the direction of the pulsed current can further avoid void formation and prolong the durability of the phase change memory.
附图1所示是本发明一具体实施方式所述相变存储器电路示意图。FIG. 1 is a schematic diagram of a phase change memory circuit according to an embodiment of the present invention.
附图2所示是本发明一具体实施方式所述脉冲设定方式示意图。FIG. 2 is a schematic diagram of a pulse setting method according to a specific embodiment of the present invention.
附图3所示是本发明一具体实施方式所述方法所采用的相变存储器结构示意图。FIG. 3 is a schematic structural diagram of a phase change memory used in the method according to an embodiment of the present invention.
附图4所示是附图3所示具体实施方式中原子迁移和原子富集的示意图。FIG. 4 is a schematic diagram of atomic migration and atomic enrichment in the specific embodiment shown in FIG. 3 .
下面结合附图对本发明提供的一种相变存储器的脉冲设定方法的具体实施方式做详细说明。The specific embodiments of the pulse setting method of the phase change memory provided by the present invention will be described in detail below with reference to the accompanying drawings.
附图1所示是本发明一具体实施方式所述相变存储器电路示意图。在一个具体实施方式中，所述相变存储器的外加脉冲电流即为位线输入的脉冲电流。FIG. 1 is a schematic diagram of a phase change memory circuit according to an embodiment of the present invention. In a specific implementation manner, the applied pulse current of the phase change memory is the pulse current input by the bit line.
附图2所示是本发明一具体实施方式所述脉冲设定方式示意图。所述相变存储器的相变材料具有非晶态和结晶态，所述相变存储器上述两状态的交替由外加脉冲电流实现，所述脉冲电流的方向交替设置，即从所述结晶态向非晶态转换的第一脉冲电流与从非晶态向结晶态转换的第二脉冲电流互为反向设置。FIG. 2 is a schematic diagram of a pulse setting method according to a specific embodiment of the present invention. The phase change material of the phase change memory has an amorphous state and a crystalline state. The alternation of the above two states of the phase change memory is realized by an external pulse current, and the direction of the pulse current is set alternately, that is, from the crystalline state to the non-crystalline state. The first pulse current for the crystalline state conversion and the second pulse current for the conversion from the amorphous state to the crystalline state are arranged in opposite directions to each other.
在一个具体的实施方式中，所述第一脉冲电流使相变材料发生从所述结晶态向所述非晶态转换的过程，即相变材料的非晶化，此过程中相变材料由低阻值转变为高阻值；所述第二脉冲电流使相变材料发生从所述非晶态向所述结晶态转换的过程，即相变材料的晶化，此过程中相变材料由高阻值转变为低阻值。所述第一脉冲电流和所述第二脉冲电流的方向即可以为正向，也可以为负向。In a specific embodiment, the first pulse current causes the phase change material to undergo a process of converting from the crystalline state to the amorphous state, that is, the amorphization of the phase change material. In this process, the phase change material is composed of The low resistance value is transformed into a high resistance value; the second pulse current causes the phase change material to undergo a process of transitioning from the amorphous state to the crystalline state, that is, the crystallization of the phase change material, during which the phase change material is composed of A high resistance value is converted to a low resistance value. The directions of the first pulse current and the second pulse current may be positive or negative.
在一个具体的实施方式中，所述第一设定方式设定为所述第一脉冲电流为正向，所述第二脉冲电流为负向。所述第二设定方式设定为所述第一脉冲电流为负向，所述第二脉冲电流为正向。In a specific implementation manner, the first setting manner is set that the first pulse current is in the positive direction, and the second pulse current is in the negative direction. In the second setting mode, the first pulse current is set in a negative direction, and the second pulse current is in a positive direction.
所述相变存储器的脉冲设定方法先以所述第一设定方式执行，再以所述第二设定方式执行，执行所述第一设定方式和所述第二设定方式的时间相同。所述脉冲设定方法以第一设定方式和第二设定方式交替进行，先以第一设定方式执行N次，然后以第二设定方式执行N次的方式交替执行，其中N为大于1的整数。在一个具体的实施方式中，所述脉冲电流执行所述第一设定方式和所述第二设定方式的循环，即执行方式是“第一、第一、第一、第二、第二、第二、第一、第一、第一、第二、第二、第二……”。在又一个具体的实施方式中，所述脉冲电流执的执行方式也可以是“第一、第二、第一、第二、第一、 第二……”。由于活性区材料成分不同，具有不同的交换特性。不同材料的电子风力和静电力方向不同，导致不同原子的富集位置不同，最终形成空洞，使相变存储器产生断路故障。使用交替的脉冲能够缓和原子迁移的和原子富集的累积效应。The pulse setting method of the phase change memory is first executed in the first setting mode, and then executed in the second setting mode, and the time for executing the first setting mode and the second setting mode same. The pulse setting method is performed alternately with the first setting method and the second setting method, firstly performing N times with the first setting method, and then performing alternately with the second setting method for N times, wherein N is Integer greater than 1. In a specific embodiment, the pulse current executes the cycle of the first setting mode and the second setting mode, that is, the execution mode is "first, first, first, second, second" , second, first, first, first, second, second, second...". In yet another specific implementation manner, the execution manner of the pulse current may also be "first, second, first, second, first, second...". Due to the different composition of the active region material, it has different exchange characteristics. The direction of the electronic wind and electrostatic force of different materials is different, which leads to different enrichment positions of different atoms, and finally forms a cavity, which causes the phase change memory to have an open circuit failure. The use of alternating pulses can moderate the cumulative effects of atomic migration and atomic enrichment.
附图3所示是本发明一具体实施方式所述方法所采用的相变存储器结构示意图。所述相变存储器的结构包括一底部电极41，一衬底42，一加热器43，一相变材料层44和一顶部电极45，所述加热器43用以加热所述相变材料层44以使相变材料在非晶态和结晶态之间转化，加热点H设置在所述加热器43与所述相变材料层44的接口处。在一个具体实施方式中，所述相变存储器的相变材料层44为GST材料层。FIG. 3 is a schematic structural diagram of a phase change memory used in the method according to an embodiment of the present invention. The structure of the phase change memory includes a bottom electrode 41 , a substrate 42 , a heater 43 , a phase change material layer 44 and a top electrode 45 , and the heater 43 is used to heat the phase change material layer 44 In order to convert the phase change material between the amorphous state and the crystalline state, a heating point H is provided at the interface of the heater 43 and the phase change material layer 44 . In a specific embodiment, the phase change material layer 44 of the phase change memory is a GST material layer.
附图4所示是附图3所示具体实施方式中原子迁移和原子富集的示意图。结合上文的叙述，具体在GST材料中，该材料由Te、Ge和Sb原子构成，由于活性区材料成分不同，具有不同的交换特性。Te原子的电子风力和静电力方向与Ge和Sb原子不同，导致三种原子的富集位置不同，最终形成空洞，使相变存储器产生断路故障。使用上文所述的交替的脉冲能够缓和原子迁移的和原子富集的累积效应。FIG. 4 is a schematic diagram of atomic migration and atomic enrichment in the specific embodiment shown in FIG. 3 . In combination with the above description, specifically in the GST material, the material is composed of Te, Ge and Sb atoms, and has different exchange characteristics due to the different composition of the active region material. The electron wind and electrostatic force directions of Te atoms are different from those of Ge and Sb atoms, resulting in different enrichment positions of the three kinds of atoms, which eventually form voids and cause the phase change memory to have open circuit failures. The use of alternating pulses as described above can moderate the cumulative effects of atomic migration and atomic enrichment.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above are only the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the principles of the present invention, several improvements and modifications can also be made, and these improvements and modifications should also be regarded as It is the protection scope of the present invention.
Claims (6)
- 一种相变存储器的脉冲设定方法，所述相变存储器的相变材料具有非晶态和结晶态，所述相变存储器上述两状态的交替由一外加脉冲电流实现，其特征在于，所述脉冲电流的方向交替设置，即从所述结晶态向所述非晶态转换的第一脉冲电流与从所述非晶态向所述结晶态转换的第二脉冲电流互为反向设置。A pulse setting method for a phase change memory, wherein the phase change material of the phase change memory has an amorphous state and a crystalline state, and the alternation of the above two states of the phase change memory is realized by an external pulse current, characterized in that the The directions of the pulse currents are alternately set, that is, the first pulse current for switching from the crystalline state to the amorphous state and the second pulse current for switching from the amorphous state to the crystalline state are set opposite to each other.
- 根据权利要求1中所述的方法，其特征在于，所述脉冲设定方法包括第一设定方式和第二设定方式：The method according to claim 1, wherein the pulse setting method comprises a first setting method and a second setting method:所述第一设定方式设定为所述第一脉冲电流为正向，所述第二脉冲电流为负向；The first setting mode is set that the first pulse current is a positive direction, and the second pulse current is a negative direction;所述第二设定方式设定为所述第一脉冲电流为负向，所述第二脉冲电流为正向；The second setting mode is set that the first pulse current is negative, and the second pulse current is positive;所述方法先以所述第一设定方式执行，再以所述第二设定方式执行，执行所述第一设定方式和所述第二设定方式的时间相同。The method is first executed in the first setting mode, and then executed in the second setting mode, and the time for executing the first setting mode and the second setting mode is the same.
- 根据权利要求2中所述的方法，其特征在于，所述脉冲设定方法以第一设定方式和第二设定方式交替进行。The method according to claim 2, wherein the pulse setting method is alternately performed in a first setting manner and a second setting manner.
- 根据权利要求2中所述的方法，其特征在于，所述脉冲设定方法以第一设定方式执行N次，然后以第二设定方式执行N次的方式交替执行，其中N为大于1的整数。The method according to claim 2, wherein the pulse setting method is performed N times in the first setting method, and then alternately performed in the second setting method N times, wherein N is greater than 1 the integer.
- 根据权利要求1中所述的方法，其特征在于，所述相变存储器的相变材料层为GST材料层。The method according to claim 1, wherein the phase change material layer of the phase change memory is a GST material layer.
- 根据权利要求1中所述的方法，其特征在于，所述相变存储器的结构包括一底部电极，一衬底，一加热器，一相变材料层、和一顶部电极，所述加热器用以加热所述相变材料层以使相变材料在所述非晶态和所述结晶态之间转化，加热点设置在所述加热器与所述相变材料层的接口处。The method of claim 1, wherein the structure of the phase change memory comprises a bottom electrode, a substrate, a heater, a phase change material layer, and a top electrode, and the heater is used for The phase change material layer is heated to convert the phase change material between the amorphous state and the crystalline state, and a heating point is provided at the interface of the heater and the phase change material layer.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996492A (en) * | 2006-01-05 | 2007-07-11 | 三星电子株式会社 | Phase change memory devices multi-bit operating methods |
| CN101577141A (en) * | 2008-05-07 | 2009-11-11 | 旺宏电子股份有限公司 | Memory devices and methods for operating such devices |
| CN101777380A (en) * | 2009-01-12 | 2010-07-14 | 旺宏电子股份有限公司 | Method for setting pcram devices |
| US20140063900A1 (en) * | 2012-08-30 | 2014-03-06 | Sandisk Technologies Inc. | Apparatus and method for detecting reflow process |
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2020
- 2020-11-23 WO PCT/CN2020/130934 patent/WO2022104802A1/en active Application Filing
- 2020-11-23 CN CN202080099902.9A patent/CN115485775A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1996492A (en) * | 2006-01-05 | 2007-07-11 | 三星电子株式会社 | Phase change memory devices multi-bit operating methods |
| CN101577141A (en) * | 2008-05-07 | 2009-11-11 | 旺宏电子股份有限公司 | Memory devices and methods for operating such devices |
| CN101777380A (en) * | 2009-01-12 | 2010-07-14 | 旺宏电子股份有限公司 | Method for setting pcram devices |
| US20140063900A1 (en) * | 2012-08-30 | 2014-03-06 | Sandisk Technologies Inc. | Apparatus and method for detecting reflow process |
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