WO2022097793A1 - Cellule solaire en tandem monolithique comprenant un film de photoconversion et son procédé de fabrication - Google Patents

Cellule solaire en tandem monolithique comprenant un film de photoconversion et son procédé de fabrication Download PDF

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WO2022097793A1
WO2022097793A1 PCT/KR2020/015576 KR2020015576W WO2022097793A1 WO 2022097793 A1 WO2022097793 A1 WO 2022097793A1 KR 2020015576 W KR2020015576 W KR 2020015576W WO 2022097793 A1 WO2022097793 A1 WO 2022097793A1
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solar cell
cell
light
light conversion
conversion film
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PCT/KR2020/015576
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English (en)
Korean (ko)
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최경진
송명훈
정의대
김찬울
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울산과학기술원
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Priority to PCT/KR2020/015576 priority Critical patent/WO2022097793A1/fr
Publication of WO2022097793A1 publication Critical patent/WO2022097793A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a monolithic tandem solar cell including a light conversion film and a method for manufacturing the same.
  • a solar cell is an aggregate that converts solar energy into electricity, and has been studied for a long time as it has been attracting attention as next-generation energy, and high photoelectric efficiency has been reported based on various materials such as silicon, CIGS, and perovskite.
  • the most widely used solar cell is a silicon-based solar cell, which accounts for more than 90% of the solar cell market.
  • a silicon solar cell When a silicon solar cell includes a crystalline silicon solar cell and an amorphous silicon solar cell, the crystalline silicon solar cell has a disadvantage in that the manufacturing cost is high, but it is widely commercialized due to its high energy efficiency. On the other hand, in the case of amorphous materials, the process technology is difficult, the dependence on equipment is high, and above all, the efficiency is low, so development is not in progress at present. If a silicon solar cell is classified as a first-generation, a perovskite-based solar cell is a representative of a third-generation solar cell that is being actively studied worldwide as an environmentally friendly future promising item.
  • an upper cell (cell) having a large bandgap absorbs solar energy in a low wavelength band
  • a lower cell having a low bandgap absorbs solar energy in a high wavelength band, thereby reducing loss and reducing the loss in a wide wavelength band. Since solar energy can be operated, it is possible to obtain high efficiency of 30% or more, which cannot be achieved with a single junction.
  • silicon/perovskite tandem solar cells have a small bandgap and a large bandgap, respectively, so they are advantageous for light operation, so research is active.
  • the reported structure of the tandem solar cell is largely divided into a monolithic (stacked) structure and a mechanical (mechanical, mechanically coupled) structure.
  • a two-terminal monolithic tandem structure solar cell is being studied more actively.
  • the monolithic tandem solar cell has the advantage of high efficiency, but in the case of a two-terminal tandem solar cell, the light irradiation direction of the upper cell cannot be changed, and the quantum efficiency of the short wavelength part is due to the absorption of the transparent electrode and the electron hole transport layer. There is a limit to having a low external quantum efficiency.
  • the present invention is to solve the above problems, and an object of the present invention is to provide a monolithic tandem solar cell having excellent efficiency by matching the current of the upper and lower solar cells using a photoconversion film and a method for manufacturing the same.
  • a monolithic tandem solar cell includes a silicon solar cell lower cell; a perovskite solar cell upper cell including a perovskite absorption layer formed on the solar cell lower cell; a transparent electrode and an electron hole transport layer formed on the upper cell of the solar cell; and a light conversion film layer formed on the transparent electrode and the electron hole transport layer, wherein the light conversion film layer includes a light-transmitting matrix and at least two or more light conversion materials.
  • the light conversion film layer may convert short-wavelength light of 300 nm to 400 nm incident on the monolithic tandem solar cell into long-wavelength light of 400 nm to 700 nm.
  • the light conversion film layer converts the short wavelength light of 300 nm to 400 nm incident on the monolithic tandem solar cell into light of a wavelength of 300 nm to 1200 nm that the lower cell of the solar cell can absorb, and
  • the upper cell of the solar cell may convert light having a wavelength of 300 nm to 800 nm that can be absorbed.
  • the rate at which the lower cell of the solar cell converts light having a wavelength of 300 nm to 1200 nm that can be absorbed and the rate at which the upper cell of the solar cell can absorb light of a wavelength of 300 nm to 800 nm is adjusted
  • the current of the lower cell of the silicon solar cell and the current of the upper cell of the perovskite solar cell may be matched.
  • the light-transmitting matrix includes at least one polymer matrix selected from the group consisting of EVA, PMMA, PVB, PDMS and PFPE; SiO 2 , Al 2 O 3 , at least one inorganic matrix selected from the group consisting of LiF and MgF; or a combination thereof; may include.
  • the light conversion material, Tb(THD) 3 and Eu(TTA) 3 Phen at least one selected from the group consisting of a lanthanide complex (Lanthanide complex)-based light conversion material; At least one organic dye (dye) selected from the group consisting of Coumarin, DCM, Rhodamine 6G and Fluorescein; At least one inorganic dye (dye) selected from the group consisting of CdSe quantum dot, InP quantum dot, Carbon dot and perovskite quantum dot; or a combination thereof; may include.
  • the thickness of the light conversion film layer may be 10 ⁇ m to 5 mm.
  • the light conversion film layer may be a textured surface.
  • the perovskite material may be one represented by the following formula (1).
  • A is at least one material selected from the group consisting of an alkyl group of C n H 2n+1 and an inorganic material
  • B is selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce At least one substance
  • X is a substance in which halogen is a substance.
  • a method of manufacturing a monolithic tandem solar cell includes: preparing a perovskite solar cell upper cell and a silicon solar cell lower cell; bonding and stacking the lower cell of the silicon solar cell and the upper cell of the perovskite solar cell; forming a transparent electrode and an electron hole transport layer on the upper cell of the perovskite solar cell; and forming a light conversion film layer on the transparent electrode and the electron hole transport layer, wherein the light conversion film layer includes: preparing a light-transmitting matrix solution; It will include the steps of preparing a mixed solution by adding and preparing a light conversion film layer from the mixed solution.
  • the step of forming texturing on the surface of the light conversion film layer may further include.
  • the step of forming the texturing on the surface of the photoconversion film is to be performed in a manner of micromolding, nanoimprinting, laser scribing, or etching.
  • the quantum efficiency of the low short-wavelength portion can be maximized, and even after the tandem solar cell is completed, the upper and lower solar cell currents can be matched.
  • FIG. 1 is a view showing a monolithic tandem solar cell according to an embodiment of the present invention.
  • FIG. 2 is a graph showing the efficiency according to the wavelength of the monolithic tandem solar cell to which the light conversion film layer is applied according to an embodiment of the present invention and the monolithic tandem solar cell of the comparative example to which the light conversion film layer is not applied.
  • FIG. 1 is a view showing a monolithic tandem solar cell according to an embodiment of the present invention. Hereinafter, the present invention will be described with reference to FIG. 1 .
  • a monolithic tandem solar cell includes a silicon solar cell lower cell 100; a perovskite solar cell upper cell 200 including a perovskite absorption layer formed on the solar cell lower cell; a transparent electrode and an electron hole transport layer 300 formed on the upper cell of the solar cell; and a light conversion film layer 400 formed on the transparent electrode and the electron hole transport layer, wherein the light conversion film layer includes a light-transmitting matrix and at least two or more light conversion materials 410 and 420 .
  • the quantum efficiency of the low short-wavelength portion can be maximized, and even after the tandem solar cell is completed, the upper and lower solar cell currents can be matched.
  • the light conversion film layer may convert short-wavelength light of 300 nm to 400 nm incident on the monolithic tandem solar cell into long-wavelength light of 400 nm to 700 nm.
  • the low absorption band may be light-converted by the light conversion materials 410 and 420 to be converted into light having a wavelength that the solar cell can absorb, thereby increasing the efficiency of the solar cell.
  • the light conversion film layer converts the short wavelength light of 300 nm to 400 nm incident on the monolithic tandem solar cell into light of a wavelength of 300 nm to 1200 nm that the lower cell of the solar cell can absorb, and
  • the upper cell of the solar cell may convert light having a wavelength of 300 nm to 800 nm that can be absorbed.
  • the rate at which the lower cell of the solar cell converts light having a wavelength of 300 nm to 800 nm that can be absorbed and the rate at which the upper cell of the solar cell can absorb light of a wavelength of 300 nm to 1200 nm is adjusted
  • the current of the lower cell of the silicon solar cell and the current of the upper cell of the perovskite solar cell may be matched.
  • the low absorption band short wavelength is optically converted to the upper solar cell absorption wavelength and the lower solar cell absorption wavelength by the photoconversion materials 410 and 420 , and at this time, the ratio of the light conversion material is adjusted to control the upper cell
  • the efficiency of monolithic tandem solar cells can be improved by matching the current of the lower cell with the current. That is, by applying the light conversion film layer to the monolithic tandem solar cell, it is possible to maximize the quantum efficiency of the low short-wavelength portion, and even after the tandem solar cell is completed, the upper and lower solar cell currents can be matched.
  • the light conversion film layer may be formed by mixing a light-transmitting matrix and a light conversion material.
  • the light-transmitting matrix includes at least one polymer matrix selected from the group consisting of EVA, PMMA, PVB, PDMS and PFPE; SiO 2 , Al 2 O 3 , at least one inorganic matrix selected from the group consisting of LiF and MgF; or a combination thereof; may include.
  • the light conversion material, Tb(THD) 3 and Eu(TTA) 3 Phen at least one selected from the group consisting of a lanthanide complex (Lanthanide complex)-based light conversion material; At least one organic dye (dye) selected from the group consisting of Coumarin, DCM, Rhodamine 6G and Fluorescein; At least one inorganic dye (dye) selected from the group consisting of CdSe quantum dot, InP quantum dot, Carbon dot and perovskite quantum dot; or a combination thereof; may include.
  • the upper solar cell and the lower solar cell current can be matched.
  • the thickness of the light conversion film layer may be 10 ⁇ m to 5 mm.
  • the thickness of the light conversion film layer is less than 10 ⁇ m, a problem of forming a film may occur, and when the thickness of the light conversion film layer exceeds 5 mm, a problem of non-uniform thickness may occur.
  • FIG. 2 is a graph showing the efficiency according to the wavelength of the monolithic tandem solar cell to which the light conversion film layer is applied according to an embodiment of the present invention and the monolithic tandem solar cell of the comparative example to which the light conversion film layer is not applied.
  • the efficiency between 300 nm and 400 nm wavelength is decreased due to absorption of the transparent electrode and the electron hole transport layer.
  • the efficiency of the monolithic tandem solar cell of the embodiment to which the light conversion film layer is applied according to the present invention is greatly improved between 300 nm and 400 nm wavelength.
  • the light conversion film layer may be a textured surface.
  • a PFPE stamp having an inverted pyramid texture it may be to form texturing on the surface of the light conversion film layer in a micromoding method.
  • the present invention is not limited thereto, and various texturing methods may be applied. By texturing the surface of the light conversion film layer, an anti-reflection function can be imparted, and the light conversion efficiency of the monolithic tandem solar cell can be maximized.
  • the perovskite material may be one represented by the following formula (1).
  • A is at least one material selected from the group consisting of an alkyl group of C n H 2n+1 and an inorganic material
  • B is selected from the group consisting of Pb, Sn, Ti, Nb, Zr, and Ce At least one substance
  • X is a substance in which halogen is a substance.
  • the electron hole transport layer may be an electron transport layer, a hole transport layer, or a combination thereof.
  • the electron transport layer is C60, C70, C71, C76, C78, C80, C82, C84, C92 PC60BM, PC61BM, PC71BM, ICBA, BCP, PC70BM, IC70BA, PC84BM, indene C60, indene C70, endohydral fullerene, perylene , PTCDA, PTCBI, BCP (bathocuproine), Bphen (4, 7-diphenyl-1,10-phenanthroline), TpPyPB and DPPS may be one comprising at least one selected from the group consisting of, but is not limited thereto.
  • the hole transport layer is NPB, CuPC, Spiro-TTB, CuI, NiO, PEDOT:PSS (poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)), PTAA (poly[bis(4-phenyl) (2,4,6-trimethylphenyl), P30T (poly (3-octyl thiophene)), P3DT (poly (3-decyl thiophene)), TPD (N, N'-bis (3-methylphenyl) -N ,N'-diphenyl-[1,1'-biphenyl]-4,4'-diamine), P3DDT (poly (3-dodecylthiophene), polythiophenylenevinylene, polyvinylcarbazole (polyvinylcarbazole), poly-p-phenylenevinylene and derivatives thereof, and metal oxide semiconductors such as molybdenum oxide, nickel oxide
  • the transparent electrode may include a transparent conductive material, a translucent conductive material, etc., for example, Co, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti , Ge, Sb, Al, Pt, Ni, Cu, Rh, Au, V, Nb, Ag, Pd, Zn, Ni, Si, Sn and Ru; alloys thereof; and oxides thereof; including at least one selected from the group consisting of,
  • the oxide may include at least one of a transparent conductive oxide (TCO) such as ITO, ZITO, ZIO, GIO, ZTO, FTO, AZO, and GZO.
  • TCO transparent conductive oxide
  • carbon allotropes such as carbon nanotubes (CNT), graphene, graphite, and conductive polymer materials such as polyacetylene, polyaniline, polythiophene, polypyrrole, etc. may be further included.
  • a method of manufacturing a monolithic tandem solar cell includes: preparing a perovskite solar cell upper cell and a silicon solar cell lower cell; bonding and stacking the lower cell of the silicon solar cell and the upper cell of the perovskite solar cell; forming a transparent electrode and an electron hole transport layer on the upper cell of the perovskite solar cell; and forming a light conversion film layer on the transparent electrode and the electron hole transport layer, wherein the light conversion film layer includes: preparing a light-transmitting matrix solution; It will include the steps of preparing a mixed solution by adding and preparing a light conversion film layer from the mixed solution.
  • the step of forming texturing on the surface of the light conversion film layer may further include.
  • the step of forming the texturing on the surface of the photoconversion film is to be performed in a manner of micromolding, nanoimprinting, laser scribing, or etching.
  • a PFPE stamp having an inverted pyramid texture it may be to form texturing on the surface of the light conversion film layer by a micromoding method, in which case a temperature condition of 100 °C and a pressure condition of 20 Mpa It may be to proceed with a hot press.

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Abstract

La présente invention concerne une cellule solaire en tandem monolithique comprenant un film de photoconversion et son procédé de fabrication et, plus spécifiquement, une cellule solaire en tandem monolithique et son procédé de fabrication, la cellule solaire en tandem monolithique comprenant : une cellule solaire inférieure en silicium ; une cellule solaire supérieure en pérovskite formée sur la cellule solaire inférieure et comprenant une couche d'absorption de pérovskite ; une électrode transparente et une couche de transport de trous d'électrons qui sont formées sur la cellule solaire supérieure ; et une couche de film de photoconversion formée sur l'électrode transparente et la couche de transport de trous d'électrons, la couche de film de photoconversion comprenant une matrice de transmission de lumière et au moins deux types de matériaux de photoconversion.
PCT/KR2020/015576 2020-11-09 2020-11-09 Cellule solaire en tandem monolithique comprenant un film de photoconversion et son procédé de fabrication WO2022097793A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130074929A1 (en) * 2010-05-28 2013-03-28 Asahi Glass Company, Limited Wavelength conversion film
JP2014022499A (ja) * 2012-07-17 2014-02-03 Sharp Corp 太陽電池
JP2017168498A (ja) * 2016-03-14 2017-09-21 株式会社カネカ 積層型光電変換装置およびその製造方法
KR20190026484A (ko) * 2017-09-05 2019-03-13 엘지전자 주식회사 텐덤 태양전지 및 그 제조 방법
KR20190143744A (ko) * 2018-06-21 2019-12-31 (주)프런티어에너지솔루션 다중접합 태양전지 및 이의 제조방법
KR20200127685A (ko) * 2019-05-03 2020-11-11 울산과학기술원 광변환 필름을 포함하는 모노리식 텐덤 태양전지 및 이의 제조방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130074929A1 (en) * 2010-05-28 2013-03-28 Asahi Glass Company, Limited Wavelength conversion film
JP2014022499A (ja) * 2012-07-17 2014-02-03 Sharp Corp 太陽電池
JP2017168498A (ja) * 2016-03-14 2017-09-21 株式会社カネカ 積層型光電変換装置およびその製造方法
KR20190026484A (ko) * 2017-09-05 2019-03-13 엘지전자 주식회사 텐덤 태양전지 및 그 제조 방법
KR20190143744A (ko) * 2018-06-21 2019-12-31 (주)프런티어에너지솔루션 다중접합 태양전지 및 이의 제조방법
KR20200127685A (ko) * 2019-05-03 2020-11-11 울산과학기술원 광변환 필름을 포함하는 모노리식 텐덤 태양전지 및 이의 제조방법

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