WO2022097289A1 - Modulateur optique iq - Google Patents

Modulateur optique iq Download PDF

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Publication number
WO2022097289A1
WO2022097289A1 PCT/JP2020/041612 JP2020041612W WO2022097289A1 WO 2022097289 A1 WO2022097289 A1 WO 2022097289A1 JP 2020041612 W JP2020041612 W JP 2020041612W WO 2022097289 A1 WO2022097289 A1 WO 2022097289A1
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Prior art keywords
optical
modulator
light
optical modulator
input
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PCT/JP2020/041612
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English (en)
Japanese (ja)
Inventor
泰彰 橋詰
義弘 小木曽
常祐 尾崎
光映 石川
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日本電信電話株式会社
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Priority to PCT/JP2020/041612 priority Critical patent/WO2022097289A1/fr
Publication of WO2022097289A1 publication Critical patent/WO2022097289A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 

Definitions

  • the present invention relates to an IQ optical modulator capable of operating at high speed and in a wide wavelength band.
  • multi-valued light modulators using digital coherent technology play a major role in realizing large-capacity transceivers exceeding 100 Gbps.
  • the multi-valued light modulator is capable of zero-charp drive, which is composed of a Mach-Zender interference type optical waveguide (MZ optical waveguide) that splits the optical input into two arms, combines them after phase shift, and outputs interference.
  • Optical modulators (MZM) are built in parallel and multi-stage. With such a configuration, independent signals can be added to the amplitude and phase of light.
  • a typical polarization-multiplexed IQ optical modulator which is currently becoming widespread in communication networks, has a so-called nested structure in which each arm of the parent MZM is composed of child MZMs.
  • Two child MZMs are provided in parallel corresponding to each of the X and Y polarization channels, and an MZM (Quad-pallell MZM) having a total of four child MZMs is configured.
  • the two arms of each child MZM are provided with a traveling wave type electrode to which an RF modulated electric signal for performing a modulation operation is input to the optical signal propagating in the optical waveguide.
  • one of the two such paired child MZMs is the I channel and the other is the Q channel.
  • an RF-modulated electric signal is input to one end of a modulation electrode provided along the arm optical waveguide of the child MZM to generate an electro-optical effect, and the optical waveguide of the child MZM is generated.
  • Phase modulation is applied to the two optical signals propagating within (Patent Document 1).
  • FIG. 1 shows an example of a conventional polarization multiplex IQ optical modulator.
  • MZM101X for an X polarization channel and MZM101Y for a Y polarization channel are formed on a semiconductor chip, and MZM101XI and 101YI for the I channel and MZM101YI for the Q channel, respectively. It has a nested structure including MZM101XQ and 101YQ.
  • the input optical waveguide 102 formed from the center of one side of the semiconductor chip passes between MZM101X and 101Y and is connected to the light demultiplexer 103.
  • the light demultiplexers 104X and 104Y are connected to the output of the light demultiplexer 103, and MZM101XI, 101XQ and MZM101YI, 101YQ are connected to the output, respectively.
  • the MZM101X for the X polarization channel is provided with the MZM101XI and the phase adjuster 106XI for the I channel and the MZM101XQ and the phase adjuster 106XQ for the Q channel between the light demultiplexer 104X and the optical combiner 105X. ing. Further, in the MZM101XI for the I channel, an MZ optical waveguide 109XIa, 109XIb and a phase adjuster 110XIa, 110XIb are provided between the optical demultiplexer 107XI and the optical combiner 108XI.
  • the traveling wave electrode formed on the MZ optical waveguide 109XIa, 109XIb is connected to the RF signal line 111XIa, 111XIb formed from the other side of the semiconductor chip, and the RF modulation signal is supplied. Since the configuration for the Q channel is the same, the description thereof will be omitted. Further, since the MZM101Y for the Y polarization channel has the same structure as the MZM101X for the X polarization channel, the description thereof will be omitted.
  • the input light 121 is branched by the optical demultiplexer 103 via the input optical waveguide 102, and each channel light of X and Y polarization is photomodulated by an RF modulation signal in MZM101X and MZM101Y, and one side of the semiconductor chip. Is output as modulated output light 122X, 122Y.
  • the waveguide structure is symmetric between the IQ channels, so that the characteristic error between the channels is small with respect to the temperature fluctuation and temperature distribution in the chip.
  • the line length L1 of the RF signal lines 111XIa and 111XIb for inputting the RF modulated signal becomes long, there is a concern that the high frequency characteristics may be deteriorated.
  • FIG. 2 shows another example of a conventional polarization-multiplexed IQ optical modulator.
  • MZM201X for an X polarization channel and MZM201Y for a Y polarization channel are formed on a semiconductor chip, and MZM201XI and 201YI for the I channel and MZM201YI for the Q channel are formed, respectively. It has a nested structure including MZM201XQ and 201YQ.
  • the input optical waveguide 202 formed from the center of one side of the semiconductor chip passes between MZM201X and 201Y and is connected to the light demultiplexer 203.
  • the optical demultiplexers 204X and 204Y are connected to the output of the light demultiplexer 203, and the optical waveguide on the output side thereof is folded back 180 ° and connected to each of the MZM201XI and 201XQ and the MZM201YI and 201YQ.
  • MZM201X and MZM201Y are the same as that of MZM101X and MZM101Y except for the folded structure, so the description thereof will be omitted.
  • the input light 221 is branched by the optical demultiplexer 203 via the input optical waveguide 202, and each channel light of X and Y polarization is photomodulated by an RF modulation signal in MZM201X and MZM201Y, and one side of the semiconductor chip. Is output as modulated output light 222X, 222Y.
  • the line length L2 of the RF signal lines 211XIa and 211XIb for inputting the RF modulation signal can be shortened, and deterioration of high frequency characteristics can be suppressed.
  • the waveguide structure between the IQ channels in the MZM201X and the MZM201Y becomes asymmetric, the characteristic error between the IQ channels becomes large with respect to the temperature fluctuation / temperature distribution in the semiconductor chip.
  • the phase adjuster in the above-mentioned example is a phase adjuster utilizing a thermo-optical effect, and heats an optical waveguide by energizing a metal material (heater) loaded above the optical waveguide and propagates in the optical waveguide.
  • the phase of the optical signal is changed.
  • the electric power (P ⁇ ) required to change the phase by ⁇ is required to be about 30 mW, and further reduction in power consumption is required for miniaturization.
  • An object of the present invention is to provide an IQ optical modulator capable of suppressing deterioration of high frequency characteristics, improving resistance to temperature fluctuations and temperature distribution, and achieving miniaturization and low power consumption.
  • the present invention is an IQ optical modulator having a first optical modulator for an I channel and a second optical modulator for a Q channel, wherein the present invention is a semiconductor.
  • a second optical waveguide connected to an input optical waveguide formed from one side of the chip, provided between the first and second light modulators, and demultiplexing the input light to the first and second light modulators.
  • a first optical modulator that combines the output light from the first and second light modulators and outputs the light from one side of the semiconductor chip, and the first optical modulator. It is a first phase adjuster inserted between the output of the above and the first optical modulator, and is an optical waveguide from the first optical demultiplexer to the first optical modulator and the first optical modulator.
  • the optical waveguide from the first light modulator to the first optical modulator was inserted between the first phase adjuster in which the optical waveguide was arranged below the same electrode, the output of the second light modulator, and the first optical modulator.
  • FIG. 1 It is a figure which shows an example of the conventional IQ optical modulator of a polarization multiplex type. It is a figure which shows the other example of the conventional polarization multiplex type IQ light modulator. It is a figure which shows the IQ light modulator which concerns on Example 1 of this invention. It is sectional drawing which shows the structure of the phase adjuster of the IQ light modulator which concerns on Example 1.
  • FIG. It is a figure which shows the IQ light modulator which concerns on Example 2 of this invention.
  • FIG. 3 shows the IQ optical modulator according to the first embodiment of the present invention.
  • the IQ optical modulator 300 is a single-polarized IQ optical modulator, which comprises an I-channel optical modulator (MZM) 301I and a Q-channel optical modulator (MZM) 301Q on a semiconductor chip. It has a nested structure.
  • the input optical waveguide 302 formed from one side of the semiconductor chip is connected to the optical demultiplexer 304 (first optical demultiplexer) provided between the MZM 301I and 301Q via the optical cross waveguide 312. ..
  • the IQ optical modulator 300 is provided with an MZM301I and a phase adjuster 306I for the I channel and an MZM301Q and the phase adjuster 306Q for the Q channel between the light demultiplexer 304 and the optical duplexer 305. .. Further, the MZM301I for the I channel is provided with a Mach-Zehnder interference type arm waveguide (MZ optical waveguide) 309Ia, 309Ib and a phase adjuster 310Ia, 310Ib between the optical demultiplexer 307I and the optical combiner 308I. Has been done.
  • MZ optical waveguide Mach-Zehnder interference type arm waveguide
  • the traveling wave electrode formed on the MZ optical waveguides 309Ia and 309Ib is connected to the RF signal lines 311Ia and 311Ib formed from the other side of the semiconductor chip, and the RF modulation signal is supplied. Since the configuration for the Q channel is the same, the description thereof will be omitted.
  • the input light 321 is photomodulated by an RF modulation signal in MZM301I and MZM301Q via an input optical waveguide 302, is coupled by an optical combiner 305 (first optical combiner), and is modulated and output from one side of a semiconductor chip. It is output as light 322.
  • the waveguide structure is symmetric between IQ channels, the characteristic error between channels is small with respect to the temperature fluctuation and temperature distribution in the chip.
  • the phase adjuster 306I has two parallel optical waveguides, that is, an optical waveguide on the input side from the optical waveguide 304 to the optical waveguide 307I, and an output side from the optical waveguide 308I to the optical waveguide 305.
  • the optical waveguide of the above is arranged under the same electrode. Since the heating area of the same heater is reciprocated twice, the length of the heater can be halved as compared with the conventional one, and the heater can be shortened without deteriorating the reliability of the heater. , It can also contribute to the miniaturization of the IQ optical modulator.
  • the optical waveguide 312 is composed of two 1 ⁇ 1 MMI couplers in which the intersections of the two optical waveguides are arranged in a cross shape in which the light propagation directions are orthogonal to each other.
  • the two 1 ⁇ 1 MMI couplers have a cross-shaped planar shape and are formed of the same core-clad structure, and have a structure in which two lights having orthogonal propagation directions intersect in the same plane.
  • a 1x1 MMI coupler many modes propagate independently, but each mode has a different propagation velocity, so at a certain propagation length, the light is focused as a result of the interference of those modes. Have. By setting the center of the intersection of the two MMI couplers as this condensing point, it can function as a low-loss optical cross-guided path.
  • FIG. 4 shows the structure of the phase adjuster of the IQ optical modulator according to the first embodiment.
  • FIG. 3 is a cross-sectional view taken along the line IV-IV'shown in FIG.
  • the n-InP layer 402, the lower semiconductor clad layer 403, the semiconductor core layer 404, and the upper semiconductor clad layer 405 are laminated in this order on the SI-InP layer 401, which is a substrate.
  • a desired mesa structure is formed from the lower semiconductor clad layer 403 to the upper semiconductor clad layer 405 by dry etching, and functions as two optical waveguides.
  • the two optical waveguides are covered with an organic material 406 and flattened, and a metal electrode serving as a heater 407 is formed on the organic material 406.
  • the width of the optical waveguide is 2 ⁇ m, the distance between the centers of the optical waveguide is 4 ⁇ m, and the width of the heater is 10 ⁇ m, so that two optical waveguides can be heated by the same heater. Since light propagates in the heated region, a phase change is applied to the optical waveguide. Therefore, by propagating twice in the same heated region, it is possible to obtain twice the phase change as compared with the conventional single propagation. can.
  • the electric power (P ⁇ ) required to change the phase by ⁇ is 30 mW, but in the first embodiment, it can be reduced to about half.
  • FIG. 5 shows the IQ optical modulator according to the second embodiment of the present invention.
  • the IQ optical modulator 500 is a single-polarized IQ optical modulator, which has a nested structure of MZM501I for I-channel and MZM501Q for Q-channel on a semiconductor chip.
  • the input optical waveguide 502 formed from one side of the semiconductor chip is connected to the optical demultiplexer 504 (first optical demultiplexer) provided between the MZM501I and 501Q via the optical cross waveguide 512. ..
  • the IQ optical modulator 500 is provided with an MZM501I and a phase adjuster 506I for an I channel and an MZM501Q and a phase adjuster 506Q for a Q channel between the light demultiplexer 504 and the optical combiner 505. .
  • the MZM501I for the I channel is provided with an optical demultiplexer 507I (second optical demultiplexer) and phase adjusters 510Ia and 510Ib between the MZM501I and 501Q, and the optical waveguide on the output side is folded back by 180 °. It is connected to the Mach-Zehnder interference type arm waveguide (MZ optical waveguide) 509Ia, 509Ib.
  • MZ optical waveguide Mach-Zehnder interference type arm waveguide
  • the light propagation direction of the light demultiplexer 507I and the light propagation direction of the MZ optical waveguides 509Ia and 509Ib are opposite to each other.
  • the optical waveguide inside the folded portion is provided with a bent portion so that the lengths of the optical waveguides from the phase adjusters 510Ia and 510Ib to the MZ optical waveguides 509Ia and 509Ib are equal.
  • the outputs of the MZ optical waveguides 509Ia and 509Ib are combined by the optical combiner 508I and input to the phase adjuster 506I.
  • the traveling wave electrode formed on the MZ optical waveguide 509Ia, 509Ib is connected to the RF signal line 511Ia, 511Ib formed from the other side of the semiconductor chip, and the RF modulation signal is supplied. Since the configuration for the Q channel is the same, the description thereof will be omitted.
  • the input light 521 is photomodulated by the RF modulation signal in the MZM501I and MZM501Q via the input optical waveguide 502, combined by the optical combiner 505 (first optical combiner), and modulated and output from one side of the semiconductor chip. It is output as light 522.
  • the phase adjusters 510Ia and 510Ib are provided between the MZM501I and 501Q, the line lengths of the RF signal lines 511Ia and 511Ib can be shortened as compared with the first embodiment, and the semiconductor chip can be shortened. Can also be shortened.
  • the phase adjuster 506I has two parallel optical waveguides, that is, an optical waveguide on the input side from the optical waveguide 504 to the optical waveguide 507I, and an output side from the optical waveguide 508I to the optical waveguide 505.
  • the optical waveguide of the above is arranged under the same electrode. Since the heating area of the same heater is reciprocated twice, the length of the heater can be halved as compared with the conventional one, and the heater can be shortened without deteriorating the reliability of the heater. , It can also contribute to the miniaturization of the IQ optical modulator.
  • FIG. 6 shows a polarization-multiplexed IQ optical modulator according to the third embodiment of the present invention.
  • the polarization multiplexing type IQ optical modulator 600 two IQ optical modulators 500 of Example 2 shown in FIG. 5 are integrated in parallel on a semiconductor chip, one for the X polarization channel and the other for the Y polarization channel. It has a nested structure.
  • the input optical waveguide 602 formed from the center of one side of the semiconductor chip is connected to the light demultiplexer 603, and its output is input to the MZM601X for the X polarization channel and the MZM601Y for the Y polarization channel.
  • optical demultiplexers 604X and 604Y are connected to the output of the optical demultiplexer 603 via optical cross-guide paths 612X and 612Y, and MZM601XI, 601XQ and MZM601YI, 601YQ are connected to the outputs, respectively. To.
  • the MZM601X for the X polarization channel is provided with the MZM601XI and the phase adjuster 606XI for the I channel and the MZM601XQ and the phase adjuster 606XQ for the Q channel between the light demultiplexer 604X and the optical combiner 605X. ing. Further, the MZM601XI for the I channel is provided with an optical demultiplexer 607XI and a phase adjuster 610XIa, 610XIb between the MZM601XI and 601XIb, and the optical waveguide on the output side thereof is folded back 180 ° to form the MZ optical waveguide 609XIa, 609XIb. Is connected to.
  • the optical waveguide inside the folded portion is provided with a bent portion so that the lengths of the optical waveguides from the phase adjusters 610XIa and 610XIb to the MZ optical waveguide 609XIa and 609XIb are equal.
  • the outputs of the MZ optical waveguides 609XIa and 609XIb are combined by the optical combiner 608XI and input to the phase adjuster 606XI.
  • the outputs of the phase adjusters 606XI and 606XQ are combined by the optical combiner 605X and output as the modulated output light 622X.
  • the traveling wave electrode formed on the MZ optical waveguide 609XIa, 609XIb is connected to the RF signal line 611XIa, 611XIb formed from the other side of the semiconductor chip, and the RF modulation signal is supplied. Since the configuration for the Q channel is the same, the description thereof will be omitted. Further, since the MZM601Y for the Y polarization channel has the same structure as the MZM601X for the X polarization channel, the description thereof will be omitted.
  • the input light 621 is branched by the optical demultiplexer 603 via the input optical waveguide 602, and each channel light of X and Y polarization is photomodulated by an RF modulation signal in MZM601X and MZM601Y, and one side of the semiconductor chip. Is output as modulated output light 622X, 622Y.
  • phase adjusters 610XIa and 610XIb are provided between the MZM601XI and 601XQ, the line length of the RF signal lines 611XIa and 611XIb can be shortened and the semiconductor chip can be shortened. can.
  • phase adjusters 606XI and 606XQ have two parallel optical waveguides, that is, an optical waveguide on the input side from the optical demultiplexer 604X to the optical demultiplexer 607XI and 607XQ, and the optical waveguide from the optical combiner 608XI and 608XQ.
  • the output-side optical waveguide leading to the device 605X is located below the same electrode. Since the heating area of the same heater is reciprocated twice, the length of the heater can be halved as compared with the conventional one, and the heater can be shortened without deteriorating the reliability of the heater. , It can also contribute to the miniaturization of the IQ optical modulator.
  • FIG. 7 shows a polarization-multiplexed IQ optical modulator according to the fourth embodiment of the present invention.
  • the polarization multiplexing type IQ optical modulator 700 two IQ optical modulators 500 of Example 2 shown in FIG. 5 are integrated in parallel on a semiconductor chip, one for the X polarization channel and the other for the Y polarization channel. It has a nested structure.
  • the input optical waveguide 702 formed from the center of one side of the semiconductor chip is connected to the light demultiplexer 703, and its output is input to the MZM701X for the X polarization channel and the MZM701Y for the Y polarization channel.
  • An optical demultiplexer 704X, 704Y is connected to the output of the optical demultiplexer 703 via an optical cross-guided waveguide 712X, 712Y, and further, MZM701XI, 701XQ and MZM701YI, 701YQ are connected to the output, respectively.
  • the output of the MZM701XI, 701XQ is combined by the optical combiner 705X via the phase adjuster 706XI, 706XQ, and is output as the modulated output light 722X. Since the configurations of the MZM701XI and 701XQ are the same as those of the MZM601YI and 601YQ of the third embodiment shown in FIG. 6, the description thereof will be omitted.
  • the difference from the third embodiment is that a dummy optical cross-guided waveguide 713X is inserted between the phase adjuster 706XI and the optical combiner 705X. According to this configuration, since the number of intersections of the optical waveguide is equal between the XY channel and the IQ channel, it is possible to suppress the characteristic difference between the channels of the optical characteristics.
  • FIG. 8 shows a polarization-multiplexed IQ optical modulator according to the fifth embodiment of the present invention.
  • the polarization multiplex IQ optical modulator 800 is the MZM801X for the X polarization channel and the MZM801Y for the Y polarization channel on the semiconductor chip, and the MZM601X for the X polarization channel and the MZM601X for the X polarization channel shown in FIG. It has a nested structure including MZM601Y for the Y polarization channel, or MZM701X for the X polarization channel of Example 4 shown in FIG. 7 and MZM701Y for the Y polarization channel.
  • the difference between the third embodiment and the fourth embodiment is that a variable branch circuit is provided in the input section.
  • the variable branch circuit has a configuration in which a 1-input 2-output optical demultiplexer 831, a DC phase adjuster 832a, 832b, and a 2-input 2-output optical combine demultiplexer 833 are connected in order to the input optical waveguide 802. ing.
  • the specification of the difference in optical insertion loss between X-polarized and Y-polarized channels is determined as PDL (polarization dependent loss).
  • PDL polarization dependent loss
  • VOA variable optical attenuator
  • the optical intensity of the channel having the larger optical power intensity is attenuated and adjusted, so that excessive optical loss occurs in principle.
  • variable branch circuit of the fifth embodiment functions as an optical power trimming mechanism capable of arbitrarily adjusting the branch ratio. As a result, PDL compensation can be performed while maintaining the light intensity without excessive loss.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

La présente invention concerne un modulateur optique IQ capable de supprimer la détérioration de caractéristique haute fréquence, d'améliorer la résistance à la fluctuation de température et la distribution de température, et d'obtenir des réductions de taille et de consommation d'énergie.　Un mode de réalisation concerne un modulateur optique IQ (300) ayant un premier modulateur optique (301I) pour un canal I et un second modulateur optique (301Q) pour un canal Q, et comportant : un premier démultiplexeur optique (304) qui est connecté à un guide d'ondes optique d'entrée (302) formé à partir d'un côté d'une puce semi-conductrice, est disposé entre les premier et second modulateurs optiques, et démultiplexe la lumière d'entrée en les premier et second modulateurs optiques ; un premier multiplexeur optique (305) qui multiplexe la lumière de sortie provenant des premier et second modulateurs optiques, et délivre en sortie la lumière de sortie multiplexée à partir du côté de la puce semi-conductrice ; et des premier et second régulateurs de phase (306I, 306Q) qui sont insérés entre la sortie du premier modulateur optique et le premier multiplexeur optique. Dans chacun des régulateurs de phase, un guide d'ondes optique du premier démultiplexeur optique au premier ou au second modulateur optique et un guide d'ondes optique du premier ou du second modulateur optique au premier multiplexeur optique sont disposés dans la partie inférieure de la même électrode.
PCT/JP2020/041612 2020-11-06 2020-11-06 Modulateur optique iq WO2022097289A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180267340A1 (en) * 2017-03-15 2018-09-20 Elenion Technologies, Llc Bias control of optical modulators
WO2018174083A1 (fr) * 2017-03-22 2018-09-27 日本電信電話株式会社 Modulateur optique iq
JP2018534627A (ja) * 2015-11-20 2018-11-22 オクラロ テクノロジー リミテッド 光学変調デバイス
JP2019152732A (ja) * 2018-03-02 2019-09-12 富士通オプティカルコンポーネンツ株式会社 光変調器、及びこれを用いた光トランシーバモジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018534627A (ja) * 2015-11-20 2018-11-22 オクラロ テクノロジー リミテッド 光学変調デバイス
US20180267340A1 (en) * 2017-03-15 2018-09-20 Elenion Technologies, Llc Bias control of optical modulators
WO2018174083A1 (fr) * 2017-03-22 2018-09-27 日本電信電話株式会社 Modulateur optique iq
JP2019152732A (ja) * 2018-03-02 2019-09-12 富士通オプティカルコンポーネンツ株式会社 光変調器、及びこれを用いた光トランシーバモジュール

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