WO2022093377A3 - Carbone graphitique comprenant du bore incorporé dans le réseau de graphite et son procédé de préparation - Google Patents
Carbone graphitique comprenant du bore incorporé dans le réseau de graphite et son procédé de préparation Download PDFInfo
- Publication number
- WO2022093377A3 WO2022093377A3 PCT/US2021/047979 US2021047979W WO2022093377A3 WO 2022093377 A3 WO2022093377 A3 WO 2022093377A3 US 2021047979 W US2021047979 W US 2021047979W WO 2022093377 A3 WO2022093377 A3 WO 2022093377A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- graphite
- preparing
- mesoscopic
- boron doped
- same
- Prior art date
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title abstract 5
- 229910052796 boron Inorganic materials 0.000 title abstract 5
- 229910002804 graphite Inorganic materials 0.000 title abstract 5
- 239000010439 graphite Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 4
- 229910052799 carbon Inorganic materials 0.000 title 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 239000000376 reactant Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/20—Graphite
- C01B32/205—Preparation
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Geology (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
L'invention divulgue un graphite mésoscopique dopé au bore et un procédé de préparation d'un graphite mésoscopique dopé au bore. Le graphite mésoscopique dopé au bore est caractérisé par un filament tubulaire ouvert et fermé ayant des épaisseurs de paroi comprises entre environ 50 nm et environ 100 nm. Le procédé divulgué est un procédé de dépôt chimique en phase vapeur par pression atmosphérique dans lequel les réactifs subissent une pyrolyse dans une chambre de réaction conduisant à la croissance du graphite mésoscopique dopé au bore sur un substrat.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063107273P | 2020-10-29 | 2020-10-29 | |
US63/107,273 | 2020-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2022093377A2 WO2022093377A2 (fr) | 2022-05-05 |
WO2022093377A3 true WO2022093377A3 (fr) | 2022-09-29 |
Family
ID=81384461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2021/047979 WO2022093377A2 (fr) | 2020-10-29 | 2021-08-27 | Carbone graphitique comprenant du bore incorporé dans le réseau de graphite et son procédé de préparation |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2022093377A2 (fr) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110027162A1 (en) * | 2009-07-31 | 2011-02-03 | Massachusetts Institute Of Technology | Systems and methods related to the formation of carbon-based nanostructures |
US20130000961A1 (en) * | 2011-07-01 | 2013-01-03 | The University Of Kentucky Research Foundation | Crystallographically-oriented carbon nanotubes grown on few-layer graphene films |
CN103407985B (zh) * | 2013-07-16 | 2016-05-11 | 清华大学 | 一种杂原子掺杂碳纳米管-石墨烯复合物及其制备方法 |
-
2021
- 2021-08-27 WO PCT/US2021/047979 patent/WO2022093377A2/fr active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110027162A1 (en) * | 2009-07-31 | 2011-02-03 | Massachusetts Institute Of Technology | Systems and methods related to the formation of carbon-based nanostructures |
US20130000961A1 (en) * | 2011-07-01 | 2013-01-03 | The University Of Kentucky Research Foundation | Crystallographically-oriented carbon nanotubes grown on few-layer graphene films |
CN103407985B (zh) * | 2013-07-16 | 2016-05-11 | 清华大学 | 一种杂原子掺杂碳纳米管-石墨烯复合物及其制备方法 |
Non-Patent Citations (3)
Title |
---|
ECHEVERRIA ET AL.: "Boron-induced metamorphosis of graphitic structures - a new form of mesoscopic carbon", CARBON TRENDS, vol. 2, 8 December 2020 (2020-12-08), XP055974544, DOI: 10.1016/j.cartre.2020.10 0 012 * |
KERU ET AL.: "Effect of boron concentration on physicochemical properties of borondoped carbon nanotubes", MATERIALS CHEMISTRY AND PHYSICS, vol. 153, 7 January 2015 (2015-01-07), pages 324 - 325, XP029134347, DOI: 10.1016/j.matchemphys. 2015.01.02 0 * |
WANG ET AL.: "A Flexible and Boron-Doped Carbon Nanotube Film for High-Performance Li Storage", FRONT. CHEM., vol. 7, no. 832, 29 November 2019 (2019-11-29), pages 2 - 6, XP055974543, DOI: 10.3389/fchem.2019.00832 * |
Also Published As
Publication number | Publication date |
---|---|
WO2022093377A2 (fr) | 2022-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Koeck et al. | Thermionic electron emission from low work-function phosphorus doped diamond films | |
KR100287489B1 (ko) | 저온에서결정성탄화규소피막을형성시키는방법 | |
CN104556014A (zh) | 一种非金属表面低温制备掺杂石墨烯的方法 | |
Weber et al. | Electron cyclotron resonance plasma deposition of cubic boron nitride using N-trimethylborazine | |
US4900526A (en) | Polycrystalline rhombohedral boron nitride and method of producing the same | |
CN102020263A (zh) | 一种合成石墨烯薄膜材料的方法 | |
CN1696337A (zh) | 碳纳米管的制造方法以及实施此方法的等离子体cvd装置 | |
CN106676498B (zh) | 一种化学气相沉积系统 | |
US20130323157A1 (en) | Apparatus and Methods for the Synthesis of Graphene by Chemical Vapor Deposition | |
Liu et al. | Large-scale synthesis of highly aligned nitrogen doped carbon nanotubes by injection chemical vapor deposition methods | |
WO2022093377A3 (fr) | Carbone graphitique comprenant du bore incorporé dans le réseau de graphite et son procédé de préparation | |
US20180002831A1 (en) | Growth method of graphene | |
EP0305790B1 (fr) | Production de composé d'intercalation du graphite et films de carbone dopé | |
Ramesham et al. | Growth of polycrystalline diamond over glassy carbon and graphite electrode materials | |
CN109081332A (zh) | 石墨烯纳米图形化蓝宝石衬底及其制备方法 | |
CN202323014U (zh) | 一种气相沉积炉 | |
JP5045891B2 (ja) | ホウ素ドープカーボンナノチューブとその製造方法 | |
Hiramatsu et al. | Fabrication of graphene-based films using microwave-plasma-enhanced chemical vapor deposition | |
Li et al. | Effect of nitrogen on deposition and field emission properties of boron-doped micro-and nano-crystalline diamond films | |
Fu et al. | Characterizations of GaN film growth by ECR plasma chemical vapor deposition | |
KR960015656A (ko) | 전자 방출 필름 및 그 제조 방법 | |
Zhuravlov et al. | Obtaining silicon carbide via chemical vapor, plasma-chemical and sublimation methods | |
Ivandini et al. | Preparation and characterization of polycrystalline chemical vapor deposited boron-doped diamond thin films | |
Zhang et al. | p-Type doping of diamond films with a novel organoboron source | |
Yamada | Reduction in Residual Impurities in Chemical Vapor Deposition–Grown Hexagonal Boron Nitride Thin Films |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21887116 Country of ref document: EP Kind code of ref document: A2 |