WO2022088172A1 - A power interposer for an electric circuit device substrate - Google Patents

A power interposer for an electric circuit device substrate Download PDF

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Publication number
WO2022088172A1
WO2022088172A1 PCT/CN2020/125819 CN2020125819W WO2022088172A1 WO 2022088172 A1 WO2022088172 A1 WO 2022088172A1 CN 2020125819 W CN2020125819 W CN 2020125819W WO 2022088172 A1 WO2022088172 A1 WO 2022088172A1
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WIPO (PCT)
Prior art keywords
substrate
interposer
electric circuit
isolation
circuit device
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PCT/CN2020/125819
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French (fr)
Inventor
Jan Abraham Ferreira
Wenbo Wang
Guoqi Zhang
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Shenzhen Institute Of Wide-bandgap Semiconductors
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Application filed by Shenzhen Institute Of Wide-bandgap Semiconductors filed Critical Shenzhen Institute Of Wide-bandgap Semiconductors
Priority to PCT/CN2020/125819 priority Critical patent/WO2022088172A1/en
Publication of WO2022088172A1 publication Critical patent/WO2022088172A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Definitions

  • the present invention relates to the field of semiconductors, and more particularly to a power interposer for semiconductor devices.
  • Wide-gap semiconductor materials represented by gallium nitride and silicon carbide have the characteristics of high electron saturation speed, high thermal conductivity, high electron density and high breakdown strength, and are suitable for making of high-voltage, high-frequency and high-power power devices.
  • the circuit of the electronic power converter is usually built on two substrates: one is a high-temperature substrate for power semiconductors, and the other is a low-temperature substrate for other components in the circuit.
  • the present invention discloses a power interposer between two substrates that contain semiconductor devices, characterized by comprising: ceramic capacitors U-shaped leadframes, isolation films and isolation interconections;
  • the interposer includes at least two U-shaped leadframes, which include a leadframe body and a leadframe protrusion; whereas the two U-shaped leadframes are in parallel opposing each other, and ceramic capacitors are situated between the two U-shaped leadframes; at least two metallurgical or pressure contacts are provided at each end of the U-shaped leadframe respectively.
  • the U-shaped leadframes also includes an isolation interconnection structure which includes an isolation interconnection part and an isolation film, and the isolation film is attached to the isolation interconnection;
  • the isolation film and isolation structure serve to provide a pluarity of electrical connections.
  • a semiconductor device characterized in that it has the interposer for a semiconductor device, further comprising: a first substrate, a second substrate and a spring clip; The first end of the spring clip is pressed on the first surface of the second substrate and the second end is pressed on the second surface of the first substrate; The second surface of the second substrate is soldered or pressed with at least one contact of the first end of the interposer, and the first surface of the first substrate is soldered or pressed with at least one contact of the second end of the interposer.
  • the embodiment describes a springloaded mechanical clamp that is implemented in the form of a clip, but it is understood that alternative arrangements are also possible, for example a system of screws, nuts and spring washers.
  • a heat sink is provided on the second surface of the first substrate.
  • the first substrate is a power module.
  • the second substrate is a Printed Circuit Board.
  • the invention solves the problem of heat flow management between two substrates through power interposer, and manages heat dissipation in the space that is created between the two substrates, and the components mounted on the substrates.
  • the power interposer tunes the mechanical force on the physical connections to get the best long term reliability.
  • FIG. 1 is a side view of a semiconductor device with an interposer of a semiconductor device provided in the first embodiment.
  • FIG. 2 is a front view of the semiconductor device with the interposer of the semiconductor device provided in the first embodiment.
  • This embodiment provides an interposer and a semiconductor device for a semiconductor device, as shown in FIG. 1 and FIG. 2.
  • the semiconductor device includes a first substrate 5, a second substrate 7, a Spring clip 4, and an interposer.
  • the spring clip is used a mechanical clamp providing a means to apply a controlled mechanical force to the interposer connection between the substrates; it is shown as a spring clip but it could also be realized by a screw and springwasher assembly.
  • the second substrate 7 is a Printed Circuit Board substrate
  • the first substrate 5 is a GaN power module.
  • the first substrate 5 is high temperature substrate
  • the second substrate 7 is low temperature substrate.
  • a plurality of electric circuit devices 8 are provided on both surfaces of substrates, and in this embodiment, the first surface of the second substrate 7 is the upper surface.
  • the second surface of the first substrate 5 is provided with a heat sink 6.
  • the second surface of the first substrate 5 is the lower surface.
  • the first end of the spring clamp 4 is crimped and arranged on the first surface of the second substrate 7, and the second end is arranged on the second surface of the first substrate 5; the first substrate 5 and the second substrate 7 are respectively provided with spring clip 4.
  • the spring clip 4 applies elastic mechanical pressure to the interposer assembly through the first substrate 5 and the second substrate 7, that are designed to be sufficiently rigid, making it possible to attach the power module with optimal mechanical pressure for long term reliability while exposing the lead frame surfaces to air which improves the heat dissipation capacity.
  • the interposer includes a U-shaped leadframe 1, a ceramic capacitor 2, a contact 3, an isolation film 9 and an isolation interconnection 10.
  • the U-shaped leadframe 1 includes a leadframe body and a leadframe protrusion. There are two leadframe protrusions provided at each end of the leadframe body respectively, and the metallurgical or pressure contacts are setting at the ends of the two leadframe protrusions.
  • the interposer includes at least two U-shaped leadframes 1.
  • the two U-shaped leadframes 1 are preferably used to prepare the interposer, and the ceramic capacitor 2 is arranged between the two U-shaped leadframes.
  • the material of the U-shaped leadframes 1 is a metal conductive material, and the thickness of the U-shaped leadframes 1 is 2.85 mm-4.275 mm.
  • the U-shaped leadframes 1 can carry one or more ceramic capacitors 2 side by side.
  • the ceramic capacitor 2 is divided into three parts and situated between the two U-shaped leadframes.
  • the ceramic capacitors of ferroelectric or anti-ferroelectric type are used having nominal values typically ranging between 0.5 ⁇ F-10 ⁇ F.
  • the U-shaped leadframes 1 also include an isolation interconnection structure.
  • the isolation interconnection structure is arranged on the left side of the U-shaped leadframe in FIG. 2, and it includes an isolation interconnection 10 and an isolation film 9.
  • the isolation film 9 is attached to the isolation interconnection 10.
  • the multiple contacts 3 at the upper end of the U-shaped leadframes 1 are, as shown in FIG. 2, the contacts 3 on the U-shaped leadframes and the contacts 3 on the three isolated interconnects 10.
  • the contact 3 and the second surface of the second substrate 7 are connected by soldering joints or press-contacts.
  • the second surface of the second substrate 7 is the lower surface.
  • a plurarity of electrical connections that are electrically isolated from the the U shaped lead frames 1 are connected to the substrates by contacts 3 at the lower end of the U-shaped leadframes, as shown in FIG. 2, indicated as the three isolation interconnects 10.
  • the contact 3 and the first surface of the first substrate 5 and second substrate 6 are connected by soldering or pressing.
  • the first surface of the first substrate 5 is the upper surface.
  • the power modules of power devices such as IGBTs and MOSFETs, and the GaN transistors may also be any transistors using wide-bandgap semiconductor materials, such as SiC.
  • the operating temperature of the inserter is -40°C to 150°C.
  • the working voltage under the maximum attenuation value of the device is 400V-800V, the rated voltage is 500V-900V, and the maximum peak working voltage is 650V-1300V.
  • the interconnection between the two substrates is realized through a new interposer structure, and at the same time, the problem of heat dissipation control between the two substrates is solved.
  • the problem of interconnection between the two substrates has been solved; the problem of difficult heat dissipation is solved by setting ceramic capacitors between the two U-shaped leadframes 1;
  • the heat dissipation capacity of the semiconductor device is improved.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

The invention discloses a power interposer for an electric circuit device substrate and a circuit substrate, the power interposer includes at least two U-shaped leadframes and the ceramic capacitor is arranged in the middle of the two U-shaped leadframes; at least one contact is arranged at each end of the U-shaped leadframes respectively. And the U-shaped leadframes also includes a first substrate, a second substrate and a spring clamp. The two U-shaped leadframes are parallel and arranged between the two substrates relatively. The invention solves the problem of making electrical connections between two circuits on substrates by introducing a power interposer that manages heat dissipation in the space that is created between the two substrates and the components mounted on the substrates. The power interposer also tunes the mechanical stresses on the physical connections to get the best long term reliability.

Description

A power interposer for an electric circuit device substrate Technical Field
The present invention relates to the field of semiconductors, and more particularly to a power interposer for semiconductor devices.
Background Art
Wide-gap semiconductor materials represented by gallium nitride and silicon carbide have the characteristics of high electron saturation speed, high thermal conductivity, high electron density and high breakdown strength, and are suitable for making of high-voltage, high-frequency and high-power power devices. The circuit of the electronic power converter is usually built on two substrates: one is a high-temperature substrate for power semiconductors, and the other is a low-temperature substrate for other components in the circuit.
In the existing technology, there is no solution for the problem of making an effective electrical, mechanical and thermal connection between the two substrates.
Disclosure of Invention
In order to overcome the limitations and shortcomings of the existing technology and solve the technical problem that the containment of the thermomechanical stress and reduction of thermal resistance have on reliability, the present invention discloses a power interposer between two substrates that contain semiconductor devices, characterized by comprising: ceramic capacitors U-shaped leadframes, isolation films and isolation interconections; The interposer includes at least two U-shaped leadframes, which include a leadframe body and a leadframe protrusion; whereas the  two U-shaped leadframes are in parallel opposing each other, and ceramic capacitors are situated between the two U-shaped leadframes; at least two metallurgical or pressure contacts are provided at each end of the U-shaped leadframe respectively.
In particular, there are two leadframe protrusions respectively provided at each end of the leadframe body, and the metallurgical or pressure contacts are positioned at the ends of the two leadframe protrusions.
In particular, the U-shaped leadframes also includes an isolation interconnection structure which includes an isolation interconnection part and an isolation film, and the isolation film is attached to the isolation interconnection; The isolation film and isolation structure serve to provide a pluarity of electrical connections.
In particular, there is a gap of 1mm-5mm between the upper end of the ceramic capacitor disposed in the middle of the two U-shaped leadframe and the contact; And there is a gap of 1mm-5mm between the lower end of the ceramic capacitor and the contact.
According to the further aspect of the invention, a semiconductor device, characterized in that it has the interposer for a semiconductor device, further comprising: a first substrate, a second substrate and a spring clip; The first end of the spring clip is pressed on the first surface of the second substrate and the second end is pressed on the second surface of the first substrate; The second surface of the second substrate is soldered or pressed with at least one contact of the first end of the interposer, and the first surface of the first substrate is soldered or pressed with at least one contact of the second end of the interposer.
The embodiment describes a springloaded mechanical clamp that is implemented in the form of a clip, but it is understood that alternative arrangements are also possible, for example a system of screws, nuts and spring washers.
In particular, a heat sink is provided on the second surface of the first substrate.
In particular, the first substrate is a power module.
In particular, the second substrate is a Printed Circuit Board.
The beneficial effects of the present invention are:
The invention solves the problem of heat flow management between two substrates through power interposer, and manages heat dissipation in the space that is created between the two substrates, and the components mounted on the substrates. The power interposer tunes the mechanical force on the physical connections to get the best long term reliability.
Brief Description of Drawings
FIG. 1 is a side view of a semiconductor device with an interposer of a semiconductor device provided in the first embodiment.
FIG. 2 is a front view of the semiconductor device with the interposer of the semiconductor device provided in the first embodiment.
Description of reference signs: U-shaped leadframes 1, Ceramic Capacitor 2, Contact 3, Spring clip 4, First Substrate 5, Heat Sink 6, Second Substrate 7, 8. Components mounted on the Second Substrate 8, Isolation film 9, Isolated interconnection 10.
Mode (s) for Carrying Out the Invention
The specific implementation of the present invention will be described in detail as below. It is necessary to point out that the following implementations are only used for further description of the present invention, and cannot be understood as limiting the scope of protection of the present invention. Those skilled in the art will discuss the present invention based on the above-mentioned content of the present invention.  Some non-essential improvements and adjustments made still belong to the protection scope of the present invention.
This embodiment provides an interposer and a semiconductor device for a semiconductor device, as shown in FIG. 1 and FIG. 2. The semiconductor device includes a first substrate 5, a second substrate 7, a Spring clip 4, and an interposer. In this embodiment the spring clip is used a mechanical clamp providing a means to apply a controlled mechanical force to the interposer connection between the substrates; it is shown as a spring clip but it could also be realized by a screw and springwasher assembly. In this embodiment, the second substrate 7 is a Printed Circuit Board substrate, and the first substrate 5 is a GaN power module. At the same time, the first substrate 5 is high temperature substrate, the second substrate 7 is low temperature substrate. A plurality of electric circuit devices 8 are provided on both surfaces of substrates, and in this embodiment, the first surface of the second substrate 7 is the upper surface. The second surface of the first substrate 5 is provided with a heat sink 6. In this embodiment, the second surface of the first substrate 5 is the lower surface. The first end of the spring clamp 4 is crimped and arranged on the first surface of the second substrate 7, and the second end is arranged on the second surface of the first substrate 5; the first substrate 5 and the second substrate 7 are respectively provided with spring clip 4. The spring clip 4 applies elastic mechanical pressure to the interposer assembly through the first substrate 5 and the second substrate 7, that are designed to be sufficiently rigid, making it possible to attach the power module with optimal mechanical pressure for long term reliability while exposing the lead frame surfaces to air which improves the heat dissipation capacity.
The mechanical pressure performance characteristics of the spring clip 4 tuning the mechanical force on the physical connections for best long term reliability.
The interposer includes a U-shaped leadframe 1, a ceramic capacitor 2, a contact  3, an isolation film 9 and an isolation interconnection 10. As shown in FIG. 2, the U-shaped leadframe 1 includes a leadframe body and a leadframe protrusion. There are two leadframe protrusions provided at each end of the leadframe body respectively, and the metallurgical or pressure contacts are setting at the ends of the two leadframe protrusions.
The interposer includes at least two U-shaped leadframes 1. In this embodiment, the two U-shaped leadframes 1 are preferably used to prepare the interposer, and the ceramic capacitor 2 is arranged between the two U-shaped leadframes. The material of the U-shaped leadframes 1 is a metal conductive material, and the thickness of the U-shaped leadframes 1 is 2.85 mm-4.275 mm.
In a preferred embodiment, the U-shaped leadframes 1 can carry one or more ceramic capacitors 2 side by side. In FIG2, the ceramic capacitor 2 is divided into three parts and situated between the two U-shaped leadframes. At the same time, when the ceramic capacitor 2 is arranged between the two U-shaped leadframes 1, there is a fixed distance gap between the upper end of the ceramic capacitor 2 and the contact 3, that is, the second substrate 7; the lower end of the ceramic capacitor 2 and the contact 3, that is, there is a gap of a fixed distance from the first substrate 5. There is a gap of 1mm-5mm between the upper end of the ceramic capacitor disposed in the middle of the two U-shaped leadframes and the contact. There is a gap of 1mm-5mm between the lower end of the ceramic capacitor and the contact.
In the preferred embodiment the ceramic capacitors of ferroelectric or anti-ferroelectric type are used having nominal values typically ranging between 0.5 μF-10 μF.
The U-shaped leadframes 1 also include an isolation interconnection structure. The isolation interconnection structure is arranged on the left side of the U-shaped leadframe in FIG. 2, and it includes an isolation interconnection 10 and an isolation  film 9. The isolation film 9 is attached to the isolation interconnection 10.
The multiple contacts 3 at the upper end of the U-shaped leadframes 1 are, as shown in FIG. 2, the contacts 3 on the U-shaped leadframes and the contacts 3 on the three isolated interconnects 10. The contact 3 and the second surface of the second substrate 7 are connected by soldering joints or press-contacts. In this embodiment, the second surface of the second substrate 7 is the lower surface.
A plurarity of electrical connections that are electrically isolated from the the U shaped lead frames 1 are connected to the substrates by contacts 3 at the lower end of the U-shaped leadframes, as shown in FIG. 2, indicated as the three isolation interconnects 10. The contact 3 and the first surface of the first substrate 5 and second substrate 6 are connected by soldering or pressing. In this embodiment, the first surface of the first substrate 5 is the upper surface.
The power modules of power devices such as IGBTs and MOSFETs, and the GaN transistors may also be any transistors using wide-bandgap semiconductor materials, such as SiC.
According to a preferred embodiment of the present invention, the operating temperature of the inserter is -40℃ to 150℃. The working voltage under the maximum attenuation value of the device is 400V-800V, the rated voltage is 500V-900V, and the maximum peak working voltage is 650V-1300V.
In this embodiment, the interconnection between the two substrates is realized through a new interposer structure, and at the same time, the problem of heat dissipation control between the two substrates is solved. By introducing a U-shaped leadframe 1 and arranging contacts 3 on the structure, the problem of interconnection between the two substrates has been solved; the problem of difficult heat dissipation is solved by setting ceramic capacitors between the two U-shaped leadframes 1; By setting a heat sink on the back of the power module, that is, the GaN power module,  the heat dissipation capacity of the semiconductor device is improved.
Although the exemplary embodiments of the present invention have been described for illustrative purposes, those skilled in the art will understand that they can be modified in form and details without departing from the scope and spirit of the invention disclosed in the appended claims. Various modifications, additions and substitutions are made, and all these changes shall fall within the protection scope of the appended claims of the present invention, and the various steps in the various departments and methods of the products claimed by the present invention can be combined in any combination. Forms are combined together. Therefore, the description of the embodiments disclosed in the present invention is not intended to limit the scope of the present invention, but to describe the present invention. Accordingly, the scope of the present invention is not limited by the above embodiments, but by the claims or their equivalents.

Claims (8)

  1. A power interposer for an electric circuit device substrate that contains electric circuit devices, characterized by an assembly comprising: ceramic capacitors U-shaped leadframes, isolation films and isolation interconections;
    the interposer includes at least two U-shaped leadframes, which include a leadframe body and a leadframe protrusion; whereas the two U-shaped leadframes are in parallel opposing each other, and ceramic capacitors are situated between the two U-shaped leadframes; at least two metallurgical or pressure contacts are provided at each end of the U-shaped leadframes respectively.
  2. The power interposer for an electric circuit device substrate according to claim 1, wherein there are two leadframe protrusions provided at each end of the leadframe body respectively, and metallurgical or pressure contacts are provided at the ends of the two U-shaped leadframe protrusions.
  3. The power interposer for an electric circuit device substrate according to claim 2, wherein the U-shaped leadframe further comprises an electrical isolation interconnection structure, the isolation interconnection structure includes an isolation interconnection part and an isolation film, the isolation film is attached to the isolation interconnection, the isolation film and isolation structure are to satisfy different electrical connections between the semiconductor substrates.
  4. The power interposer for an electric circuit device substrate according to claim 2, wherein there is a gap of 1mm-5mm between the upper end of the ceramic capacitor disposed in the middle of the two U-shaped leadframes and the contact; There is a gap of 1mm-5mm between the lower end of the ceramic capacitor and the contact.
  5. An electric circuit device assembly, characterized in that it has the interposer for a electric circuit device substrates according to any one of claims 1-4, further includes: a first substrate, a second substrate and a spring loaded mechanical clamp;
    the first end of the spring loaded mechanical clamp is pressed on the first surface of the second substrate, and the second end is pressed on the second surface of the first substrate;
    the second surface of the second substrate is soldered or pressed with at least one contact of the first end of the interposer, and the first surface of the first substrate is soldered or pressed with at least one contact of the second end of the interposer.
  6. The electric circuit device assembly of claim 5, wherein a heat sink is provided on the second surface of the first substrate.
  7. The electric circuit device assembly according to claim 6, wherein the first substrate is a power module.
  8. The electric circuit device assembly of claim 6, wherein the second substrate is a Printed Circuit Board.
PCT/CN2020/125819 2020-11-02 2020-11-02 A power interposer for an electric circuit device substrate WO2022088172A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120313229A1 (en) * 2011-04-22 2012-12-13 Cyntec Co., Ltd. Package structure and manufacturing method thereof
CN106298724A (en) * 2015-06-25 2017-01-04 台达电子工业股份有限公司 Plastic package type power model
CN109716515A (en) * 2016-09-09 2019-05-03 三菱电机株式会社 Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120313229A1 (en) * 2011-04-22 2012-12-13 Cyntec Co., Ltd. Package structure and manufacturing method thereof
CN106298724A (en) * 2015-06-25 2017-01-04 台达电子工业股份有限公司 Plastic package type power model
CN109716515A (en) * 2016-09-09 2019-05-03 三菱电机株式会社 Semiconductor device

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