WO2022087768A1 - Jonction tunnel magnétique, mémoire vive magnétorésistive et dispositif électronique - Google Patents

Jonction tunnel magnétique, mémoire vive magnétorésistive et dispositif électronique Download PDF

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Publication number
WO2022087768A1
WO2022087768A1 PCT/CN2020/123560 CN2020123560W WO2022087768A1 WO 2022087768 A1 WO2022087768 A1 WO 2022087768A1 CN 2020123560 W CN2020123560 W CN 2020123560W WO 2022087768 A1 WO2022087768 A1 WO 2022087768A1
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layer
tunnel junction
magnetic tunnel
free layer
magnetic
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PCT/CN2020/123560
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English (en)
Chinese (zh)
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秦青
周雪
路鹏
朱靖华
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华为技术有限公司
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Priority to CN202080105266.6A priority Critical patent/CN116114402A/zh
Priority to PCT/CN2020/123560 priority patent/WO2022087768A1/fr
Publication of WO2022087768A1 publication Critical patent/WO2022087768A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Definitions

  • the present application relates to the field of electronics, in particular to magnetic tunnel junctions, magnetoresistive random access memories and electronic devices.
  • Magneto-resistive random access memory is a new type of non-volatile memory technology, which has gradually attracted widespread attention due to its high speed, low power consumption and good compatibility. Unlike mainstream storage, it uses changes in the direction of magnetic polarization to store information.
  • the magnetic tunnel junction includes a free layer, a tunneling layer and a reference layer.
  • the magnetism of the reference layer does not change, while the magnetism of the free layer changes with control current or other magnetic flipping mechanisms.
  • the memory cell When the magnetization directions of the reference layer and the free layer are parallel, the memory cell exhibits low resistance, and when the reference layer and the free layer magnetization directions are antiparallel, the memory cell exhibits high resistance.
  • the state of high resistance and low resistance of memory cells can be used to represent 0 or 1 in binary, respectively, so as to achieve the purpose of storing information.
  • the magnetic tunnel junction in current MRAM technology is usually composed of a cobalt iron boron alloy (CoFeB)/magnesium oxide (MgO) system.
  • CoFeB/MgO cobalt iron boron alloy
  • the system of CoFeB/MgO can provide perpendicular magnetic anisotropy (PMA), providing upward or downward magnetization directions in the reference and free layers.
  • PMA perpendicular magnetic anisotropy
  • the magnetic orientation of the free layer only changes with the direction of the write current.
  • the magnetic direction of the free layer is reversed by 180°.
  • the magnetic orientation of the free layer does not change during read data and no operations. This ability to not change the magnetic orientation is called thermal stability and is relevant to the design of the magnetic tunnel junction.
  • the magnetic tunnel junction needs to have sufficient thermal stability.
  • the thermal stability of each magnetic tunnel junction is proportional to the volume, and its thermal stability decreases as the size of the magnetic tunnel junction decreases. Therefore, with the development trend of miniaturization of electronic devices, the industry urgently needs to develop magnetic tunnel junctions that can improve thermal stability.
  • the present application provides a magnetic tunnel junction, a magnetoresistive random access memory and an electronic device, which can improve the thermal stability of the magnetic tunnel junction.
  • a magnetic tunnel junction comprising: a reference layer region; a tunneling layer, wherein the constituent material of the tunneling layer is MgO; and a free layer region, the free layer region includes a first free layer, at least a second free layer and at least one insertion layer; wherein the first free layer is adjacent to the tunneling layer, the constituent material of the first free layer includes cobalt iron boron CoFeB, the at least one second free layer is The constituent material of the layer includes iron boron FeB, or, the constituent material of the at least one second free layer includes CoFeB, and the content of Co accounts for less than 5%, the constituent material of the insertion layer includes a non-magnetic material, and the insertion layer includes a non-magnetic material. Layer spacing is distributed between the first free layer and the at least one second free layer.
  • the free layer region in the magnetic tunnel junction is provided with a first free layer, a second free layer and an insertion layer.
  • the first free layer adjacent to the tunneling layer is composed of CoFeB to ensure the TMR and magnetic damping of the magnetic tunnel junction.
  • the second free layer is composed of FeB or CoFeB with a low content of Co. Since the second free layer does not contain Co or has a low content of Co, the interface formed between the second free layer and the insertion layer can improve the unit area of the interface. PMA, thereby improving the thermal stability of the magnetic tunnel junction.
  • the free layer region may include a second free layer and a first insertion layer, or may include a plurality of second free layers and a plurality of insertion layers.
  • the Co content in the second free layer accounts for 0% to 5%
  • the Fe content accounts for 65% to 90%
  • the B content accounts for 10% to 30%.
  • the content of Fe in the second free layer is 60%-90%, and the content of B is 10%-40%.
  • the content of Fe in the first free layer is 50% to 70%
  • the content of B is 15% to 25%
  • the content of Co is 50% to 25%.
  • the ratio is 15% to 25%.
  • the constituent material of the insertion layer includes a non-magnetic metal or a non-magnetic oxide.
  • the constituent material of the insertion layer includes at least one of the following: MgO, Al 2 O 3 , and MgAlO 2 .
  • the constituent materials of the insertion layer include at least one of the following materials: molybdenum Mo, iridium Ir, platinum Pr, tungsten W, thallium Ta, chromium Cr, gold Au, ruthenium Ru .
  • the thickness of the insertion layer is less than or equal to 6 angstroms.
  • the thickness of the insertion layer should be thin enough to enable ferromagnetic coupling to be formed between the first free layer and the second free layer or the second free layer on both sides of the insertion layer.
  • the free layer region includes a second free layer, an insertion layer, and the first free layer in order from top to bottom.
  • the reference layer region includes a spin torque providing layer and an antiferromagnetic pinning layer, and a constituent material of the spin torque providing layer includes CoFeB.
  • a cover layer is further provided above the free layer region, and a seed layer is further provided below the reference layer region.
  • a magnetoresistive random memory access device (MRAM) is provided, and a memory cell of the MRAM includes the magnetic tunnel junction described in the first aspect or any possible implementation manner of the first aspect.
  • the PMA of the magnetic tunnel junction is relatively high, so that the thermal stability of the memory cell of the MRAM can be improved, and the data retention time of the MRAM can be improved.
  • an electronic device which includes the magnetic tunnel junction described in the first aspect or any possible implementation manner of the first aspect.
  • a chip in a fourth aspect, includes the magnetic tunnel junction described in the first aspect or any possible implementation manner of the first aspect.
  • FIG. 1 is a schematic structural diagram of a magnetic tunnel junction 100 according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a magnetic tunnel junction 200 according to an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a magnetic tunnel junction 300 according to an embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a magnetic tunnel junction 400 according to an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a storage unit 50 of an MRAM according to an embodiment of the present application.
  • FIG. 1 is a schematic structural diagram of a magnetic tunnel junction 100 according to an embodiment of the present application.
  • the magnetic tunnel junction 100 includes a thin insulating layer between two ferromagnetic layers.
  • One of the ferromagnetic layers may be referred to as the free layer 11
  • the other ferromagnetic layer may be referred to as the reference layer 13
  • the insulating layer may also be referred to as the tunneling layer 12 .
  • the magnetic tunnel junction has a relatively low resistivity.
  • the magnetic moment of the free layer 11 can be switched to the opposite direction to that of the reference layer 13 . In this state, it is more difficult for electrons to pass through the tunneling layer 12, resulting in the magnetic tunnel junction 100 having a relatively high resistivity.
  • Different resistance states can be used to store different logic values.
  • Perpendicular magnetic anisotropy Orbital anisotropy in atoms manifests when the ferromagnetic layer is very thin.
  • Perpendicular magnetic anisotropy means that the spins of the outer electrons in the ferromagnetic layer are selectively oriented in the direction perpendicular to the interface of the ferromagnetic layer in the spatial degrees of freedom.
  • the interface of the ferromagnetic layer may refer to the interface between the ferromagnetic layer and other layers, for example, the interface between the ferromagnetic layer and the tunneling layer.
  • Thermal stability The orientation of the magnetic moment in the free layer does not change with or without read operations on the magnetic tunnel junction (MTJ). This ability to not change the direction of the magnetic moment is called thermal stability. Thermal stability is related to the design of the magnetic tunnel junction. It should be noted that thermal stability is proportional to the PMA and volume of the magnetic tunnel junction.
  • Tunneling magneto-resistance When the magnetic moments of the free layer and the reference layer are in the same direction, electrons can pass through the insulating layer more easily. In this state, the magnetic tunnel junction has relatively low resistance. Rate. By applying a voltage of opposite polarity, the magnetic moment of the free layer can be switched in the opposite direction to that of the reference layer. In this state, it is more difficult for electrons to tunnel through the insulating layer, resulting in a relatively high resistivity for the magnetic tunnel junction. Therefore, the magnetic tunnel junction can be switched between two resistance states, a high resistance state and a low resistance state. This property is called the TMR effect.
  • Ferromagnetic coupling refers to the electromagnetic coupling between ferromagnetic materials.
  • Resistance area product refers to the product of the resistance and the area of the tunneling layer of the magnetic tunnel junction.
  • the embodiment of the present application proposes a magnetic tunnel junction, and the magnetic tunnel junction can improve the thermal stability of the magnetic tunnel junction.
  • the thermal stability of the magnetic tunnel junction is proportional to the PMA and volume. When the size of electronic devices shrinks, the size of the magnetic tunnel junction also shrinks. Therefore, the thermal stability of the magnetic tunnel junction cannot be increased by increasing the thickness of the magnetic tunnel junction. Instead, it is considered to increase the magnetic tunnel junction by increasing the PMA per unit area. thermal stability of the junction.
  • PMA mainly relies on the vertical anisotropy energy at the interface of magnetic and nonmagnetic materials, for example, the vertical anisotropy energy produced by the interface between the free layer region and the tunneling layer. Therefore, if the interface between the magnetic material and the non-magnetic material in the magnetic tunnel junction is increased, the PMA per unit area can be increased, thereby improving the thermal stability of the magnetic tunnel junction.
  • the embodiment of the present application proposes a structure of a magnetic tunnel junction, wherein the free layer region includes a first free layer and a second free layer, and is distributed between the first free layer and the second free layer by using an intervening layer spacer.
  • An interface between FeB or CoFeB with less Co content and a non-magnetic material can be formed between the second free layer and the insertion layer, so as to improve the PMA and further improve the stability of the magnetic tunnel junction.
  • CoFeB is used in the first free layer adjacent to the tunneling layer to ensure the TMR performance and magnetic damping of the magnetic tunnel junction.
  • FIG. 2 is a schematic structural diagram of a magnetic tunnel junction 200 according to an embodiment of the present application.
  • the magnetic tunnel junction 200 includes a capping layer 201 , a free layer region 202 , a tunneling layer 203 , a reference layer region 204 and a seed layer 205 .
  • the free layer region 202 includes a first free layer 2021 , at least one second free layer 2022 and at least one insertion layer 2023 .
  • the first free layer 2021 is adjacent to the tunneling layer 203, and the constituent material of the first free layer 2021 includes cobalt iron boron (CoFeB).
  • the constituent material of the at least one second free layer 2022 includes iron boron (FeB), or the constituent material of the at least one second free layer includes CoFeB, and the content of Co accounts for less than 5%.
  • a constituent material of the insertion layer 2023 includes a non-magnetic material, and the insertion layer 2023 is distributed between the first free layer 2021 and the at least one second free layer 2022 at intervals.
  • the thickness of the insertion layer 2023 should be thin enough to form a ferromagnetic coupling between any two free layers separated by the insertion layer 2023 .
  • the above-mentioned any two free layers may refer to the first free layer 2021 and the second free layer 2022 adjacent thereto, or may also refer to any two adjacent second free layers 2022 .
  • the free layers (the first free layer 2021 and the at least one second free layer 2022 ) in the free layer region 202 form ferromagnetic coupling with each other, although the free layer region 202 is provided with an insertion layer made of a non-magnetic material 2023, but it does not play the role of electromagnetic insulation, the free layer region 202 can still be regarded as a ferromagnetically coupled whole, and its function is equivalent to the free layer of a general magnetic tunnel junction (for example, the free layer 11 in Figure 1). ) function.
  • each time an insertion layer 2023 is added to the magnetic tunnel junction 200 two more interfaces of FeB or CoFeB and non-magnetic materials can be provided on both sides of the insertion layer 2023, so as to improve the PMA of the magnetic tunnel junction, and the thermal stability is also improved. higher. Therefore, the more insertion layers 2023 in the free layer region 202, the higher the PMA of the magnetic tunnel junction.
  • the content in the embodiments of the present application refers to the atomic ratio of the corresponding element in the material, that is, the ratio of the number of different atoms.
  • the above-mentioned at least one insertion layer 2023 is distributed between the first free layer 2021 and the at least one second free layer 2022, which means that the insertion layer 2023 is disposed between the first free layer 2021 and the first free layer 2021. Between the adjacent second free layers 2022 of the free layer 2021, and, when there are two or more second free layers 2022, the intervening layer 2023 is also disposed on any two adjacent second free layers 2022 between. In other words, the purpose of the insertion layer 2023 is to make the first free layer 2021 and the at least one second free layer 2022 spaced apart.
  • the free layer region 202 may include a second free layer 2022 and an insertion layer 2023, or may include a plurality of second free layers 2022 and a plurality of insertion layers 2023.
  • FIG. 3 is a schematic structural diagram of a magnetic tunnel junction according to an embodiment of the present application.
  • the free layer region 202 in the magnetic tunnel junction 300 in FIG. 3 includes a second free layer 2022 and an insertion layer 2023 .
  • FIG. 4 is a schematic structural diagram of a magnetic tunnel junction 400 according to still another embodiment of the present application.
  • the free layer region 202 in the magnetic tunnel junction 400 includes two second free layers 2022 and two insertion layers 2023 .
  • the first free layer 2021 and the tunneling layer 203 constitute a structure with high TMR and high spin transfer torque effect.
  • the interface of FeB or CoFeB formed between the second free layer and the intercalation layer and the non-magnetic material can generate stronger vertical anisotropy energy, thereby increasing the PMA per unit area, thereby improving the thermal stability of the magnetic tunnel junction.
  • the free layer region in the magnetic tunnel junction is provided with a first free layer 2021 , a second free layer 2022 and an insertion layer 2023 .
  • the first free layer 2021 adjacent to the tunneling layer 203 is composed of CoFeB to ensure TMR and magnetic damping of the magnetic tunnel junction.
  • the second free layer 2022 is composed of FeB or CoFeB with less Co content. Since the second free layer 2022 does not contain Co or has a low content of Co, the interface formed between the second free layer 2022 and the insertion layer 2023 can be By increasing the PMA per unit area, the thermal stability of the magnetic tunnel junction can be improved.
  • the constituent material of the tunneling layer 203 may include a non-magnetic oxide.
  • a non-magnetic oxide For example, MgO, Al 2 O 3 , MgAlO 2 and the like may be included.
  • the tunneling layer 203 is in a high resistance state, and the tunneling layer 203 contributes most of the resistance in the magnetic tunnel junction.
  • the constituent material of the insertion layer 2023 includes a non-magnetic material.
  • Non-magnetic materials include non-magnetic metals or non-magnetic oxides.
  • the constituent material of the insertion layer 2023 includes at least one of the following: MgO, Al 2 O 3 , and MgAlO 2 .
  • the constituent material of the insertion layer 2023 includes at least one of the following: molybdenum (Mo), iridium (Ir), platinum (Pr), tungsten (W), thallium (Ta), chromium (Cr) , gold (Au), ruthenium (Ru), etc.
  • the content of Co in the second free layer 2022 is 0%-5%
  • the content of Fe is 65%-90%
  • the content of B is 10%-30%.
  • the content of Co can be 0, 1%, 1.5%, 2%, 2.5%, 3%, 3.5%, 4%, 4.5%, 5%.
  • the content of Fe can be 65%, 67%, 69%, 70%, 72%, 74%, 75%, 76%, 78%, 82%, 84%, 85%, 86%, 88%, 90% %.
  • the content ratio of B can be 10%, 12%, 14%, 15%, 16%, 18%, 20%, 22%, 24%, 25%, 26%, 28%, 30%.
  • the content of Fe in the second free layer 2022 is 70%-90%, and the content of B is 10%-30%.
  • the content of Fe in the second free layer 2022 is 60%-90%, and the content of B is 10%-40%.
  • the content of Fe in the first free layer 2021 is 50%-70%, the content of B is 15%-25%, and the content of Co is 15%-25%.
  • the content of Co may be 15%, 17%, 19%, 20%, 22%, 23%, 24%, 25%.
  • the content of Fe can be 50%, 52%, 55%, 58%, 60%, 62%, 65%, 68%, 70%.
  • the content ratio of B can be 15%, 16%, 18%, 20%, 22%, 24%, 25%.
  • the thickness of the insertion layer 2023 should be thin enough to enable the first free layer 2021 on both sides of the insertion layer 2023 and the second free layer 2022 adjacent to the first free layer 2021 to form ferromagnetic coupling, or to enable the insertion layer Ferromagnetic coupling can be formed between the two second free layers 2022 on both sides of the 2023 .
  • the thickness of the insertion layer 2023 may be less than or equal to 6 angstroms (abbreviated as angstroms, ),in,
  • the thickness of the insertion layer 2023 may be 3-6 angstroms.
  • the thickness of the insertion layer 2023 may be 2 ⁇ 6 angstroms.
  • the constituent material of the insertion layer 2023 is MgO
  • the B content at the interface decreases, and the interface between Fe in the second free layer 2022 and MgO in the insertion layer 2023 will form Fe-O impurities densified film.
  • the perpendicular magnetic anisotropy of the film is greater than that of the film formed by the interface between CoFe and MgO.
  • the reference layer region 204 includes a spin torque providing layer 2041 and an antiferromagnetic pinning layer 2042 .
  • the spin torque providing layer 2041 is made of a ferromagnetic material.
  • the constituent material of the spin torque providing layer 2041 may include CoFeB.
  • the function of the antiferromagnetic pinning layer 2042 is to provide the magnetic moment in the layer 2041 to fix the spin torque.
  • the antiferromagnetic pinning layer 2042 may be a common antiferromagnetic pinning layer, or an artificial antiferromagnetic pinning layer.
  • the constituent material of the artificial antiferromagnetic pinning layer includes [Co/Pt] M /Ru/[Co/Pt] N .
  • Pt represents platinum
  • Ru represents ruthenium
  • M represents the number of repetitions of the [Co/Pt] layer
  • N represents the number of repetitions of [Co/Pt].
  • capping layer 201 and seed layer 205 are each used to connect different electrodes.
  • the capping layer 201 and the seed layer 205 can be used to assist in enhancing the performance of other layers in the magnetic tunnel junction, such as assisting in enhancing the quality of lattice growth or improving the PMA.
  • the constituent material of the cover layer 201 may be a non-magnetic material.
  • Non-magnetic materials include non-magnetic metals or non-magnetic oxides.
  • the constituent material of the insertion layer includes at least one of the following: MgO, Al 2 O 3 , and MgAlO 2 .
  • the constituent material of the insertion layer includes at least one of the following: molybdenum (Mo), iridium (Ir), platinum (Pt), tungsten (W), thallium (Ta), gold (Au), etc. .
  • the constituent material of the capping layer 201 includes MgO, and an interface between FeB and a non-magnetic material can also be formed between the capping layer 201 and the second free layer 2022, thereby contributing to the magnetic tunnel junction with the Fe/MgO interface, which further enhances the Perpendicular Magnetic Anisotropy, or PMA.
  • the thickness of the cover layer is thin and the resistivity is low.
  • the thickness of the capping layer may be 3-15 angstroms.
  • the RA of the cover layer is ⁇ 2 ⁇ / ⁇ m 2 . Among them, ⁇ represents ohms, and ⁇ m represents micrometers.
  • the capping layer 201 may not be provided in the magnetic tunnel junction.
  • the constituent materials of the seed layer 205 may include NiCr, NiW, NiMo, Ta, TaN, ZrN.
  • Ni nickel
  • Cr chromium
  • Zr zirconium
  • N nitrogen.
  • magnetic tunnel junctions in the embodiments of the present application can be applied to MRAM, and can also be applied to fields such as TMR sensors or TMR heads of hard disks.
  • FIG. 5 is a schematic structural diagram of a storage unit 50 of an MRAM according to an embodiment of the present application.
  • the memory cell 50 of the MRAM generally includes a magnetic tunnel junction 500 and a transistor 510 .
  • the magnetic tunnel junction 500 may be the magnetic tunnel junction 200 , the magnetic tunnel junction 300 or the magnetic tunnel junction 400 in the embodiments of the present application.
  • the PMA of the magnetic tunnel junction is relatively high, so that the thermal stability of the memory cell of the MRAM can be improved, and the data retention time of the MRAM can be improved.
  • memory cells 50 in the MRAM are connected to word lines, bit lines and source lines. Two ends of the magnetic tunnel junction 500 may be connected to the bit line and the drain (D) of the transistor, respectively.
  • the word line is used to connect the gate (gate, G) of the transistor
  • the bit line is used to connect the drain of the transistor
  • the source line is used to connect the source (source, S) of the transistor.
  • the structure of the MRAM memory cell in FIG. 5 is only an example, and other structures may also be used when the magnetic tunnel junction in the embodiments of the present application is applied to the MRAM.
  • magnetic tunnel junction in the embodiments of the present application can also be applied to other electronic product fields other than MRAM, for example, a TMR sensor or a TMR head in a hard disk.
  • the disclosed system, apparatus and method may be implemented in other manners.
  • the apparatus embodiments described above are only illustrative.
  • the division of the units is only a logical function division. In actual implementation, there may be other division methods.
  • multiple units or components may be combined or Can be integrated into another system, or some features can be ignored, or not implemented.
  • the shown or discussed mutual coupling or direct coupling or communication connection may be through some interfaces, indirect coupling or communication connection of devices or units, and may be in electrical, mechanical or other forms.
  • the units described as separate components may or may not be physically separated, and components displayed as units may or may not be physical units, that is, may be located in one place, or may be distributed to multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution in this embodiment.
  • each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically alone, or two or more units may be integrated into one unit.

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Abstract

L'invention concerne une jonction tunnel magnétique (200, 300, 400), une mémoire vive magnétorésistive (50), et un dispositif électronique, capable d'améliorer la stabilité thermique de la jonction tunnel magnétique. La jonction tunnel magnétique comprend: une zone de couche de référence (204) ; une couche de tunnellisation (203), la couche de tunnellisation étant constituée de MgO; et une zone de couches libres (202), la zone de couches libres (202) comprenant une première couche libre (2021), au moins une seconde couche libre (2022), et au moins une couche d'insertion (2023). La première couche libre (2021) est adjacente à la couche de tunnellisation (203); le matériau formant la première couche libre (2021) comprenant du CoFeB ; le matériau formant ladite au moins une seconde couche libre (2022) comprenant du CoFeB, ou le matériau formant ladite au moins une seconde couche libre (2022) comprenant du CoFeB, et la teneur en Co est inférieure à 5%; le matériau formant la couche d'insertion (2023) comprenant un matériau non magnétique; et la couche d'insertion (2023) étant située entre la première couche libre (2021) et ladite au moins une seconde couche libre (2022).
PCT/CN2020/123560 2020-10-26 2020-10-26 Jonction tunnel magnétique, mémoire vive magnétorésistive et dispositif électronique WO2022087768A1 (fr)

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CN202080105266.6A CN116114402A (zh) 2020-10-26 2020-10-26 磁性隧道结、磁阻式随机存取存储器和电子器件
PCT/CN2020/123560 WO2022087768A1 (fr) 2020-10-26 2020-10-26 Jonction tunnel magnétique, mémoire vive magnétorésistive et dispositif électronique

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US10431275B2 (en) * 2018-03-02 2019-10-01 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers
CN110349609A (zh) * 2019-07-04 2019-10-18 西安交通大学 一种三维磁性器件及磁存储器
CN111613720A (zh) * 2019-02-25 2020-09-01 上海磁宇信息科技有限公司 一种磁性随机存储器存储单元及磁性随机存储器
CN111816760A (zh) * 2019-04-11 2020-10-23 上海磁宇信息科技有限公司 一种磁性随机存储器磁性存储单元及其形成方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107403821A (zh) * 2017-07-12 2017-11-28 北京航空航天大学 一种具有双间隔层并可形成铁磁或反铁磁耦合的多层膜
US10431275B2 (en) * 2018-03-02 2019-10-01 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers
CN111613720A (zh) * 2019-02-25 2020-09-01 上海磁宇信息科技有限公司 一种磁性随机存储器存储单元及磁性随机存储器
CN111816760A (zh) * 2019-04-11 2020-10-23 上海磁宇信息科技有限公司 一种磁性随机存储器磁性存储单元及其形成方法
CN110349609A (zh) * 2019-07-04 2019-10-18 西安交通大学 一种三维磁性器件及磁存储器

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