CN116114402A - 磁性隧道结、磁阻式随机存取存储器和电子器件 - Google Patents

磁性隧道结、磁阻式随机存取存储器和电子器件 Download PDF

Info

Publication number
CN116114402A
CN116114402A CN202080105266.6A CN202080105266A CN116114402A CN 116114402 A CN116114402 A CN 116114402A CN 202080105266 A CN202080105266 A CN 202080105266A CN 116114402 A CN116114402 A CN 116114402A
Authority
CN
China
Prior art keywords
layer
tunnel junction
free layer
magnetic tunnel
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202080105266.6A
Other languages
English (en)
Inventor
秦青
周雪
路鹏
朱靖华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Huawei Technologies Co Ltd
Original Assignee
Huawei Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huawei Technologies Co Ltd filed Critical Huawei Technologies Co Ltd
Publication of CN116114402A publication Critical patent/CN116114402A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Abstract

一种磁性隧道结(200，300，400)、磁阻式随机存取存储器(50)和电子器件，能够提高磁性隧道结的热稳定性。该磁性隧道结包括：参考层区域(204)；隧穿层(203)，隧穿层的构成材料为MgO；自由层区域(202)，自由层区域(202)中包括第一自由层(2021)、至少一个第二自由层(2022)以及至少一个插入层(2023)；其中，第一自由层(2021)与隧穿层(203)相邻，第一自由层(2021)的构成材料包括CoFeB，至少一个第二自由层(2022)的构成材料包括FeB，或者，至少一个第二自由层(2022)的构成材料包括CoFeB，并且Co的含量占比小于5％，插入层(2023)的构成材料包括非磁性材料，插入层(2023)间隔分布在第一自由层(2021)和至少一个第二自由层(2022)之间。

Description

PCT国内申请，说明书已公开。

Claims (14)

  1. PCT国内申请，权利要求书已公开。
CN202080105266.6A 2020-10-26 2020-10-26 磁性隧道结、磁阻式随机存取存储器和电子器件 Pending CN116114402A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2020/123560 WO2022087768A1 (zh) 2020-10-26 2020-10-26 磁性隧道结、磁阻式随机存取存储器和电子器件

Publications (1)

Publication Number Publication Date
CN116114402A true CN116114402A (zh) 2023-05-12

Family

ID=81381613

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080105266.6A Pending CN116114402A (zh) 2020-10-26 2020-10-26 磁性隧道结、磁阻式随机存取存储器和电子器件

Country Status (2)

Country Link
CN (1) CN116114402A (zh)
WO (1) WO2022087768A1 (zh)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107403821B (zh) * 2017-07-12 2020-01-10 北京航空航天大学 一种具有双间隔层并可形成铁磁或反铁磁耦合的多层膜
US10431275B2 (en) * 2018-03-02 2019-10-01 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers
CN111613720B (zh) * 2019-02-25 2022-09-09 上海磁宇信息科技有限公司 一种磁性随机存储器存储单元及磁性随机存储器
CN111816760B (zh) * 2019-04-11 2023-07-14 上海磁宇信息科技有限公司 一种磁性随机存储器磁性存储单元及其形成方法
CN110349609B (zh) * 2019-07-04 2021-09-07 西安交通大学 一种三维磁性器件及磁存储器

Also Published As

Publication number Publication date
WO2022087768A1 (zh) 2022-05-05

Similar Documents

Publication Publication Date Title
EP2523193B1 (en) An improved high capacity low cost multi-state magnetic memory
TWI530945B (zh) Memory elements and memory devices
JP5441881B2 (ja) 磁気トンネル接合を備えた磁気メモリ
CN109643567A (zh) 高速、低功率自旋轨道矩(sot)辅助的自旋转移矩磁随机访问存储器(stt-mram)位单元阵列
US10439133B2 (en) Method and system for providing a magnetic junction having a low damping hybrid free layer
US8686524B2 (en) Magnetic stack with oxide to reduce switching current
JP5360599B2 (ja) 磁気抵抗効果素子及び磁気ランダムアクセスメモリ
US20140269036A1 (en) Magnetic memory devices and methods of writing data to the same
US6765819B1 (en) Magnetic memory device having improved switching characteristics
TWI487155B (zh) Memory elements and memory devices
CN105684178B (zh) 基于自旋力矩转移的磁性随机存取储存器(stt-mram)和磁头
US20140097509A1 (en) Magnetic memory element and magnetic memory
US10431275B2 (en) Method and system for providing magnetic junctions having hybrid oxide and noble metal capping layers
CN103137855B (zh) 存储元件和存储设备
CN104662686A (zh) 存储元件、存储装置和磁头
US20130108889A1 (en) Magnetoresistance Device and Memory Device Including the Magnetoresistance Device
US10937947B2 (en) Magnetic memory device with a nonmagnet between two ferromagnets of a magnetoresistive effect element
CN103137853A (zh) 存储元件和存储设备
US20100091564A1 (en) Magnetic stack having reduced switching current
JP4477829B2 (ja) 磁気記憶デバイスを動作させる方法
CN116114402A (zh) 磁性隧道结、磁阻式随机存取存储器和电子器件
US6657890B1 (en) Magnetic memory device
JP2007096075A (ja) 磁気記憶素子、磁気メモリ
CN114005473A (zh) 存储单元、存储器以及数据写入方法
CN114005474A (zh) 存储单元、存储器以及数据写入方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination