WO2022083717A1 - 层状温补型声表面波谐振器与封装方法 - Google Patents

层状温补型声表面波谐振器与封装方法 Download PDF

Info

Publication number
WO2022083717A1
WO2022083717A1 PCT/CN2021/125505 CN2021125505W WO2022083717A1 WO 2022083717 A1 WO2022083717 A1 WO 2022083717A1 CN 2021125505 W CN2021125505 W CN 2021125505W WO 2022083717 A1 WO2022083717 A1 WO 2022083717A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
temperature
acoustic wave
temperature compensation
surface acoustic
Prior art date
Application number
PCT/CN2021/125505
Other languages
English (en)
French (fr)
Inventor
陈景
Original Assignee
展讯通信（上海）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 展讯通信（上海）有限公司 filed Critical 展讯通信（上海）有限公司
Publication of WO2022083717A1 publication Critical patent/WO2022083717A1/zh
Priority to US18/137,749 priority Critical patent/US20230261633A1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Definitions

  • the present application relates to the technical field of semiconductors, and in particular, to a layered temperature-compensated surface acoustic wave resonator and a packaging method.
  • SAW filters have become an indispensable key component in radio frequency (Radio Frequency, RF) front-end applications due to their small size, good performance, and low cost.
  • CA Carrier Aggregation
  • Massive MIMO Massive MIMO
  • QAM Quadrature Amplitude Modulation
  • the increase in amplitude puts forward more and more stringent technical requirements for the performance of the filter element, such as requiring better temperature stability of the core unit SAW resonator constituting the filter element.
  • Embodiments of the present application provide a layered temperature-compensated surface acoustic wave resonator and a packaging method, which can effectively improve the temperature stability of the surface acoustic wave resonator.
  • the present application provides a layered temperature-compensated surface acoustic wave resonator, comprising a substrate layer, a temperature compensation layer, a piezoelectric thin film layer, and an electrode layer;
  • the temperature compensation layer is located between the substrate layer and the piezoelectric thin film layer, and between the substrate layer and the temperature compensation layer and between the temperature compensation layer and the piezoelectric thin film layer
  • the wafer bonding method is integrated; the temperature compensation layer is made of a material with a positive temperature coefficient;
  • the electrode layer is disposed on the surface of the piezoelectric thin film layer.
  • the temperature compensation layer is made of SiO 2 .
  • the electrode layer is an interdigital electrode layer; the interdigital electrode layer is made of at least one of the following materials: aluminum, copper, gold, and aluminum-copper alloy.
  • the piezoelectric thin film layer is made of at least one of the following materials: lithium tantalate LiTaO 3 and lithium niobate LiNbO 3 .
  • the substrate layer is made of at least one of the following materials: silicon Si, silicon carbide SiC, and sapphire.
  • the thickness of the electrode layer ranges from 0.06 ⁇ to 0.15 ⁇
  • the thickness of the piezoelectric thin film layer ranges from 0.05 ⁇ to 10 ⁇
  • the thickness of the temperature compensation layer ranges from 0.06 ⁇ to 0.15 ⁇ .
  • the value ranges from 0.05 ⁇ to 2.0 ⁇
  • the thickness of the substrate layer ranges from 30 ⁇ to 150 ⁇ , where ⁇ is the wavelength corresponding to the electrode layer.
  • the substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric thin film layer is made of LiTaO 3
  • the electrode layer is made of gold.
  • the substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric thin film layer is made of LiTaO 3 ;
  • the thickness of the temperature compensation layer is 0.25 ⁇
  • the thickness of the piezoelectric thin film layer is 0.1 ⁇
  • the thickness of the electrode layer is 0.1 ⁇
  • the thickness of the substrate layer is 110 ⁇ .
  • the substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric thin film layer is made of LiTaO 3 ;
  • the thickness of the temperature compensation layer is 0.25 ⁇
  • the thickness of the piezoelectric thin film layer is 0.25 ⁇
  • the thickness of the electrode layer is 0.1 ⁇
  • the thickness of the substrate layer is 110 ⁇ .
  • the present application provides a method for packaging a layered temperature-compensated surface acoustic wave resonator, the method comprising:
  • a temperature compensation layer is prepared on the substrate layer, the substrate layer and the temperature compensation layer are integrated by wafer bonding, and the temperature compensation layer adopts a material with a positive temperature coefficient;
  • a piezoelectric thin film layer is prepared on the temperature compensation layer, and the temperature compensation layer and the piezoelectric thin film layer are integrated by wafer bonding;
  • An electrode layer is prepared on the piezoelectric thin film layer.
  • the layered temperature-compensated surface acoustic wave resonator includes a substrate layer, a temperature compensation layer, a piezoelectric film layer and an electrode layer; wherein the temperature The compensation layer is located between the substrate layer and the piezoelectric film layer, and the substrate layer and the temperature compensation layer, and between the temperature compensation layer and the piezoelectric film layer are all integrated by wafer bonding, and the electrode layer is arranged on the piezoelectric film layer.
  • the temperature compensation layer is made of a material with a positive temperature coefficient, which can effectively enhance the temperature stability of the surface acoustic wave resonator; It can ensure that the surface acoustic wave resonator has a high electromechanical coupling coefficient, which is beneficial to realize a filter with low temperature drift, high frequency and large broadband.
  • FIG. 1 is a schematic cross-sectional structure diagram of a layered temperature-compensated surface acoustic wave resonator in an embodiment of the application;
  • FIG. 2 is a schematic structural diagram of an electrode layer in the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the application;
  • FIG. 3 is a schematic diagram 1 of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the application;
  • FIG. 4 is a second schematic diagram of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the application;
  • FIG. 5 is a schematic diagram 3 of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the application;
  • FIG. 6 is a fourth schematic diagram of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the application;
  • FIG. 7 is a schematic diagram 5 of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the application;
  • FIG. 8 is a sixth schematic diagram of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the application;
  • FIG. 9 is a schematic flowchart of a packaging method for a layered temperature-compensated surface acoustic wave resonator provided in an embodiment of the present application.
  • the existing surface acoustic wave resonator is usually composed of a substrate, a piezoelectric film and an electrode layer stacked in sequence, but this structure is easily affected by the ambient temperature, and the temperature stability is poor, and it is difficult to meet the high performance of the current filter. Require.
  • an embodiment of the present application provides a layered temperature compensated surface acoustic wave resonator
  • the layered temperature compensated surface acoustic wave resonator includes a substrate layer, a temperature compensation layer, a piezoelectric thin film layer and an electrode layer; wherein, the temperature compensation layer is located between the substrate layer and the piezoelectric film layer, and the substrate layer and the temperature compensation layer and the temperature compensation layer and the piezoelectric film layer are all integrated by wafer bonding;
  • the temperature compensation layer is made of a material with a positive temperature coefficient, which can effectively eliminate the influence of temperature on the surface acoustic wave resonator and enhance the temperature stability of the surface acoustic wave resonator.
  • FIG. 1 is a schematic cross-sectional structure diagram of a layered temperature-compensated surface acoustic wave resonator in an embodiment of the present application.
  • the above-mentioned layered temperature compensated surface acoustic wave resonator includes a substrate layer 101 , a temperature compensation layer 102 , a piezoelectric thin film layer 103 and an electrode layer 104 . in:
  • the temperature compensation layer 102 is located between the substrate layer 101 and the piezoelectric thin film layer 103, and the substrate layer 101 and the temperature compensation layer 102 and the temperature compensation layer 102 and the piezoelectric thin film layer 103 are all bonded by wafer bonding. one.
  • the electrode layer 104 is disposed on the surface of the piezoelectric thin film layer 103 .
  • the wafer bonding method refers to the close bonding of two mirror-polished homogeneous or heterogeneous wafers through chemical and physical action. After the wafers are bonded, the atoms at the interface are subjected to external forces to react to form covalent bonds. The bond is integrated and the bonding interface reaches a specific bond strength. In this embodiment, using the wafer bonding method is beneficial to achieve low temperature drift and power tolerance performance of the resonator.
  • the thicknesses of the respective material layers of the layered temperature compensated surface acoustic wave resonator shown in FIG. 1 are only schematic representations, and do not represent actual thicknesses.
  • the temperature compensation layer 102 is made of a material with a positive temperature coefficient.
  • the temperature compensation layer 102 can be made of SiO 2 .
  • the electrode layer 104 is an interdigitated electrode layer; the interdigitated electrode layer can be made of at least one of the following materials: aluminum, copper, gold, and aluminum-copper alloy.
  • the piezoelectric thin film layer 103 may be made of at least one of the following materials: lithium tantalate LiTaO 3 , lithium niobate LiNbO 3 .
  • the substrate layer 101 may be made of at least one of the following materials: silicon Si, silicon carbide SiC and sapphire.
  • IDT Interdigital Transducer
  • the value range of the thickness h1 of the substrate layer 101 may be 30 ⁇ ⁇ 150 ⁇ ; the value range of the thickness h2 of the temperature compensation layer 102 may be 0.05 ⁇ ⁇ 2.0 ⁇ ; The value range of the thickness h3 may be 0.05 ⁇ ⁇ 10 ⁇ ; the value range of the thickness h4 of the electrode layer 104 may be 0.06 ⁇ ⁇ 0.15 ⁇ .
  • FIG. 2 is a schematic structural diagram of an electrode layer in the layered temperature compensated surface acoustic wave resonator provided in the embodiment of the present application.
  • the electrode layer 104 includes fork electrodes 201 , two sides of the fork electrodes 201 include reflection gratings 202 , and the ground GND and the excitation Source can be reciprocal.
  • parameters such as the number of pairs of the fork electrodes 201 and the reflection grating 202 or the number of fingers can be determined by specific designs, which are not limited in this embodiment.
  • a temperature-compensated surface acoustic wave resonator with high acoustic velocity and high electromechanical coupling coefficient can be obtained.
  • the improvement of these performances is very conducive to the realization of low-temperature drift, high-frequency and large-bandwidth filters, and can alleviate the difficulty of process processing to a certain extent, and improve the performance of device yield and power tolerance.
  • the substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric thin film layer is made of LiTaO 3
  • the electrode layer is made of gold.
  • FIG. 3 is a schematic diagram 1 of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the present application.
  • Figure 3 compares the admittance performance of two types of layered temperature-compensated SAW resonator structures.
  • K 2 ⁇ f r /(2f a ⁇ tan( ⁇ f r /2f a )), where fr is the resonant frequency of the resonator, and f a is the anti-resonance frequency.
  • the substrate layer is SiC
  • the temperature compensation layer is SiO 2
  • the piezoelectric thin film layer is LiTaO 3
  • the electrode layer is interdigital electrodes.
  • the substrate layer is Si
  • the temperature compensation layer is SiO 2
  • the piezoelectric thin film layer is LiTaO 3
  • the electrode layer is interdigital electrodes.
  • the hardness of SiC is higher than that of Si, the speed of sound propagation in SiC is correspondingly higher than that of Si substrate. It can be clearly seen that when the same temperature compensation layer, piezoelectric film layer and electrode layer are used, the The operating frequency when the substrate adopts SiC is higher than that when the substrate adopts Si. Therefore, for devices that require high frequency, materials with high hardness such as SiC can be selected as substrates. Such materials can alleviate the difficulty of process processing to a certain extent and improve the yield of devices when realizing resonators with the same operating frequency. and power tolerance.
  • FIG. 4 is a second schematic diagram of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the present application.
  • the electromechanical coupling coefficients of the two types of layered temperature-compensated SAW resonator structures are compared in Figure 4.
  • the thickness of the electrode layer is different, and the electromechanical coupling coefficient K of the above - mentioned layered temperature-compensated surface acoustic wave resonator will also be Differently, the peaks corresponding to the electromechanical coupling coefficient K2 all appear when the thickness of the electrode layer is about 0.1 ⁇ .
  • the thickness of the Al electrode is generally larger than that of the Au electrode.
  • the resonator when the substrate layer, temperature compensation layer, piezoelectric thin film layer, and electrode layer are made of SiC, SiO 2 , LiTaO 3 , and Au in sequence, the resonator can have better performance. Performance such as power tolerance and smaller size.
  • the aforementioned substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric thin film layer is made of LiTaO 3 .
  • the thickness of the substrate layer h1 is 110 ⁇
  • the thickness h2 of the temperature compensation layer is 0.25 ⁇
  • the thickness h3 of the piezoelectric thin film layer is 0.1 ⁇
  • the thickness h4 of the electrode layer is 0.1 ⁇ .
  • FIG. 5 is a third schematic diagram of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the present application.
  • FIG. 6 is a fourth schematic diagram of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the present application.
  • the above-mentioned substrate layer, temperature compensation layer, and piezoelectric thin film layer are made of SiC, SiO2, and LiTaO3 in turn, and the thickness of the substrate layer h1 is 110 ⁇ , and the thickness of the temperature compensation layer h2 is 0.25.
  • the above temperature-compensated surface acoustic wave resonator can have a higher electromechanical coupling coefficient.
  • the substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric thin film layer is made of LiTaO 3 .
  • the thickness of the substrate layer h1 is 110 ⁇
  • the thickness h2 of the temperature compensation layer is 0.25 ⁇
  • the thickness h3 of the piezoelectric thin film layer is 0.25 ⁇
  • the thickness h4 of the electrode layer is 0.1 ⁇ .
  • FIG. 7 is a fifth schematic diagram of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the present application.
  • FIG. 8 is a sixth schematic diagram of parameter simulation of the layered temperature-compensated surface acoustic wave resonator provided in the embodiment of the present application.
  • the thickness h3 of the piezoelectric film layer is 0.25 ⁇
  • the clutter at high frequencies 2.4GHz to 2.6GHz
  • only one clutter appears at higher frequencies 2.8GHz
  • the above-mentioned substrate layer, temperature compensation layer, and piezoelectric thin film layer are made of SiC, SiO2, and LiTaO3 in turn, and the thickness of the substrate layer h1 is 110 ⁇ , and the thickness of the temperature compensation layer h2 is 0.25 ⁇ , when the thickness h3 of the piezoelectric thin film layer is 0.25 ⁇ , and the thickness h4 of the electrode layer is 0.1 ⁇ , the temperature-compensated surface acoustic wave resonator can effectively suppress the clutter at high frequencies.
  • FIG. 9 A schematic flowchart of a packaging method for a layered temperature-compensated surface acoustic wave resonator.
  • the above-mentioned packaging method includes:
  • the above temperature compensation layer is made of SiO 2 .
  • the above-mentioned electrode layer is an interdigitated electrode layer; the interdigitated electrode layer is made of at least one of the following materials: aluminum, copper, gold, and aluminum-copper alloy.
  • the piezoelectric thin film layer is made of at least one of the following materials: LiTaO 3 and LiNbO 3 .
  • the above-mentioned substrate layer is made of at least one of the following materials: Si and SiC.
  • the thickness of the electrode layer ranges from 0.06 ⁇ to 0.15 ⁇
  • the thickness of the piezoelectric thin film layer ranges from 0.05 ⁇ to 10 ⁇
  • the thickness of the temperature compensation layer ranges from 0.05 ⁇ to 0.05 ⁇ . ⁇ 2.0 ⁇
  • the thickness of the substrate layer ranges from 30 ⁇ to 150 ⁇ , where ⁇ is the wavelength corresponding to the electrode layer.
  • the substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric thin film layer is made of LiTaO 3
  • the electrode layer is made of gold.
  • the substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric film layer is made of LiTaO 3 ;
  • the thickness of the temperature compensation layer is 0.25 ⁇
  • the thickness of the piezoelectric film layer is 0.25 ⁇ .
  • the thickness is 0.1 ⁇
  • the thickness of the electrode layer is 0.1 ⁇
  • the thickness of the substrate layer is 110 ⁇ .
  • the substrate layer is made of SiC
  • the temperature compensation layer is made of SiO 2
  • the piezoelectric thin film layer is made of LiTaO 3 ;
  • the thickness of the temperature compensation layer is 0.25 ⁇
  • the thickness of the piezoelectric thin film layer is 0.25 ⁇ .
  • the thickness of the electrode layer is 0.1 ⁇
  • the thickness of the substrate layer is 110 ⁇ .
  • a temperature compensation layer is also prepared between the substrate layer and the piezoelectric film layer of the surface acoustic wave resonator, and the temperature compensation layer adopts a positive temperature
  • the temperature stability of the surface acoustic wave resonator can be effectively enhanced; in addition, by optimizing the parameters of the materials of each layer in the above-mentioned surface acoustic wave resonator, the surface acoustic wave resonator can also be guaranteed to have a higher temperature stability.
  • the electromechanical coupling coefficient is beneficial to realize low-temperature drift, high-frequency and large-bandwidth filters.

Abstract

一种层状温补型声表面波谐振器及其封装方法，该层状温补型声表面波谐振器包括衬底层(101)、温度补偿层(102)、压电薄膜层(103)以及电极层(104)；其中，温度补偿层(102)位于衬底层(101)与压电薄膜层(103)之间，且衬底层(101)与温度补偿层(102)之间、温度补偿层(102)与压电薄膜层(103)之间均以晶圆键合方式结合为一体，电极层(104)设置于压电薄膜层(103)的表面；其中，温度补偿层(102)采用正温度系数的材料制成，由此可以有效增强声表面波谐振器的温度稳定性；另外，通过优化声表面波谐振器中各层材料的参数，还能够保障声表面波谐振器具有较高的机电耦合系数，有利于实现低温漂、高频和大宽带的滤波器。

Description

层状温补型声表面波谐振器与封装方法
本申请要求于2020年10月22日提交中国专利局、申请号为202011140903.1、申请名称为“层状温补型声表面波谐振器与封装方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及半导体技术领域，尤其涉及一种层状温补型声表面波谐振器与封装方法。
背景技术
声表面波(Surface Acoustic Wave，简称SAW)滤波器由于具有体积小、性能好、成本低等特点，已成为射频(Radio Frequency，简称RF)前端应用中不可或缺的关键元器件。
目前，伴随着载波聚合(Carrier Aggregation，简称CA)、规模天线技术(Massive MIMO)以及高阶正交幅度调制(Quadrature Amplitude Modulation，简称QAM)等5G核心技术的应用，射频前端元器件数量将大幅度的增加，在此情形下，对于滤波器元件的性能提出了越来越严格的技术要求，例如要求构成滤波器元件的核心单元SAW谐振器具有更好的温度稳定性。
因此，如何提升声表面波谐振器的温度稳定性是亟待解决的问题。
发明内容
本申请实施例提供一种层状温补型声表面波谐振器与封装方法，可以有效提升声表面波谐振器的温度稳定性。
第一方面，本申请提供一种层状温补型声表面波谐振器，包括衬底层、温度补偿层、压电薄膜层以及电极层；
所述温度补偿层位于所述衬底层与所述压电薄膜层之间，且所述衬底层与所述温度补偿层之间、所述温度补偿层与所述压电薄膜层之间均以晶圆键合方式结合为一体；所述温度补偿层采用正温度系数的材料制成；
所述电极层设置于所述压电薄膜层的表面。
在一种可行的实施方式中，所述温度补偿层采用SiO 2制成。
在一种可行的实施方式中，所述电极层为叉指电极层；所述叉指电极层采用以下材料中的至少一种材料制成：铝、铜、金以及铝铜合金。
在一种可行的实施方式中，所述压电薄膜层采用以下材料中的至少一种材料制成：钽酸锂LiTaO 3、铌酸锂LiNbO 3。
在一种可行的实施方式中，所述衬底层采用以下材料中的至少一种材料制成：硅Si、碳化硅SiC、蓝宝石。
在一种可行的实施方式中，所述电极层的厚度取值范围为0.06λ～0.15λ，所述压电薄膜层的厚度取值范围为0.05λ～10λ，所述温度补偿层的厚度取值范围为0.05λ～2.0λ,所述衬底层的厚度取值范围为30λ～150λ，其中，λ为所述电极层对应的波长。
在一种可行的实施方式中，所述衬底层采用SiC制成，所述温度补偿层采用SiO 2制成，所述压电薄膜层采用LiTaO 3制成，所述电极层采用金制成。
在一种可行的实施方式中，所述衬底层采用SiC制成，所述温度补偿层采用SiO 2制成，所述压电薄膜层采用LiTaO 3制成；所述温度补偿层的厚度为0.25λ，所述压电薄膜层的厚度为0.1λ，所述电极层的厚度为0.1λ，所述衬底层的厚度为110λ。
在一种可行的实施方式中，所述衬底层采用SiC制成，所述温度补偿层采用SiO 2制成，所述压电薄膜层采用LiTaO 3制成；所述温度补偿层的厚度为0.25λ，所述压电薄膜层的厚度为0.25λ，所述电极层的厚度为0.1λ，所述衬底层的厚度为110λ。
第二方面，本申请提供一种层状温补型声表面波谐振器封装方法，该方法包括：
获取衬底层；
在所述衬底层上制备温度补偿层，所述衬底层与所述温度补偿层之间以晶圆键合方式结合为一体，所述温度补偿层采用正温度系数的材料；
在所述温度补偿层上制备压电薄膜层，所述温度补偿层与所述压电薄膜层之间以晶圆键合方式结合为一体；
在所述压电薄膜层上制备电极层。
本申请实施例提供的层状温补型声表面波谐振器与封装方法，该层状温补型声表面波谐振器包括衬底层、温度补偿层、压电薄膜层以及电极层；其中，温度补偿层位于衬底层与压电薄膜层之间，且衬底层与温度补偿层之间、温度补偿层与压电薄膜层之间均以晶圆键合方式结合为一体，电极层设置于压电薄膜层的表面；其中，温度补偿层采用正温度系数的材料制成，由此可以有效增强声表面波谐振器的温度稳定性；通过优化上述声表面波谐振器中各层材料的参数，还能够保障声表面波谐振器具有较高的机电耦合系数，有利于实现低温漂、高频和大宽带的滤波器。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对本申请实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其它的附图。
图1为本申请实施例中一种层状温补型声表面波谐振器的剖面结构示意图；
图2为本申请实施例中提供的层状温补型声表面波谐振器内的一种电极层的结构示意图；
图3为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图一；
图4为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图二；
图5为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图三；
图6为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图四；
图7为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图五；
图8为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图六；
图9为本申请实施例中提供的一种层状温补型声表面波谐振器封装方法的流程示意图。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
现有的声表面波谐振器通常是由衬底、压电薄膜及电极层依次叠加构成，但是这种结构容易受到环境温度的影响，温度稳定性较差，已经难以满足目前滤波器的高性能要求。
为了解决上述技术问题，本申请实施例中提供了一种层状温补型声表面波谐振器，该层状温补型声表面波谐振器包括衬底层、温度补偿层、压电薄膜层以及电极层；其中，温度补偿层位于衬底层与压电薄膜层之间，且衬底层与温度补偿层之间、温度补偿层与压电薄膜层之间均以晶圆键合方式结合为一体；温度补偿层采用正温度系数的材料制成，可以有效消除温度对声表面波谐振器的影响，增强声表面波谐振器的温度稳定性。具体请参照以下实施例所描述的内容。
参照图1，图1为本申请实施例中一种层状温补型声表面波谐振器的剖面结构示意图。在图1中，上述层状温补型声表面波谐振器包括衬底层101、温度补偿层102、压电薄膜层103以及电极层104。其中：
温度补偿层102位于衬底层101与压电薄膜层103之间，且衬底层101与温度补偿层102之间、温度补偿层102与压电薄膜层103之间均以晶圆键合方式结合为一体。电极层104设置于压电薄膜层103的表面。
其中，晶圆键合方式是指通过化学和物理作用将两块已镜面抛光的同质或异质的晶片紧密地结合起来，晶片接合后，界面的原子受到外力的作用而产生反应形成共价键结合成一体，并使接合界面达到特定的键合强度。本实施例中，采用晶圆健合方式有利于实现低温漂和谐振器的功率耐受性能。
需要说明的是，图1中所示层状温补型声表面波谐振器的各个材料层的厚度仅仅只是示意，并不代表实际厚度。
可选的，温度补偿层102采用正温度系数的材料制成。
示例性的，温度补偿层102可以采用SiO 2制成。
在一种可行的实施方式中，电极层104为叉指电极层；该叉指电极层可以采用以下材料中的至少一种材料制成：铝、铜、金以及铝铜合金。
在一种可行的实施方式中，压电薄膜层103可以采用以下材料中的至少一种材料制成：钽酸锂LiTaO 3、铌酸锂LiNbO 3。
在一种可行的实施方式中，衬底层101可以采用以下材料中的至少一种材料制成：硅Si、碳化硅SiC及蓝宝石。
如图1所示，电极层104可以采用叉指电极(Interdigital Transducer，IDT)，假设叉指电极的宽度为a，相邻叉指电极的间隙为b，则叉指电极的半周期为p，p＝a+b，叉指电极对应的波长为λ，λ＝2p。
在一种可行的实施方式中，衬底层101的厚度h1的取值范围可以为30λ～150λ；温度补偿层102的厚度h2的取值范围可以为0.05λ～2.0λ；压电薄膜层103的厚度h3的取值范围可以为0.05λ～10λ；电极层104的厚度h4的取值范围可以为0.06λ～0.15λ。
本申请实施例中，通过优化上述声表面波谐振器中各层材料的参数，还能够保障声表面波谐振器具有较高的机电耦合系数，有利于实现低温漂、高频和大宽带的滤波器。
基于上述实施例中所描述的内容，参照图2，图2为本申请实施例中提供的层状温补型声表面波谐振器内的一种电极层的结构示意图。
在图2中，电极层104包括叉电极201，叉电极201的两侧包括反射栅202，接地GND和激励Source可以互易。另外，叉电极201和反射栅202的对数或者指条数目等参数都可以由具体的设计决定，本实施例中不做限制。
基于上述实施例中所描述的内容，通过对上述层状温补型声表面波谐振器中各层材料的参数进行优化，可以获得高声速和高机电耦合系数的温补型声表面波谐振器，这些性能的提高非常有利于实现低温漂、高频和大 宽带的滤波器，并且可以在一定程度上缓解工艺加工难度，提升器件良率和功率耐受等性能。
具体的，在本申请一种可行的实施方式中，上述衬底层采用SiC制成，温度补偿层采用SiO 2制成，压电薄膜层采用LiTaO 3制成，电极层采用金制成。
请参照图3，图3为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图一。图3中对两种类型的层状温补型声表面波谐振器结构的导纳性能进行了对比。
其中：假设λ＝1.7μm，金属化比定义为R＝a/p，R＝0.5，谐振器的响应曲线中，导纳全部取对数：log10|Y|。机电耦合系数K 2的计算公式为：K 2＝π×f r/(2f a×tan(πf r/2f a))，其中，f r为谐振器的谐振频率，f a为反谐振频率。
当上述层状温补型声表面波谐振器在采用“结构一”时，其衬底层采用SiC，温度补偿层采用SiO 2，压电薄膜层采用LiTaO 3，电极层采用叉指电极。如图3所示，上述层状温补型声表面波谐振器的谐振频率fr≌1.81GHz，反谐振频率fa≌1.9GHz。
当上述层状温补型声表面波谐振器在采用“结构二”时，其衬底层采用Si，温度补偿层采用SiO 2，压电薄膜层采用LiTaO 3，电极层采用叉指电极。如图3所示，上述层状温补型声表面波谐振器的谐振频率fr≌1.69GHz，反谐振频率fa≌1.77GHz。
其中，上述“结构一”与“结构二”中，衬底层的厚度h1＝110λ，温度补偿层的厚度h2＝0.25λ，压电薄膜层的厚度h3＝0.1λ，电极层的厚度h4＝0.1λ。
由于SiC比Si的硬度要高，声速在SiC中传播的速度相应地高于Si衬底，可以明显地看出，在采用相同的温度补偿层、压电薄膜层及电极层的情况下，衬底采用SiC时的工作频率比衬底采用Si时的工作频率要高。因此，对于要求实现高频化的器件，可以选择SiC等硬度高的材料作为衬底，此类材料在实现同等工作频率的谐振器时，可以在一定程度上缓解工艺加工难度，提升器件良率和功率耐受等性能。
请参照图4，图4为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图二。图4中对两种类型的层状温补型声表面波谐振器 结构的机电耦合系数进行了对比。
本实施例中，设置衬底层的厚度h1＝110λ，温度补偿层的厚度h2＝0.25λ，压电薄膜层的厚度h3＝0.1λ。
从图4中可以看出，当电极层采用Au(金)电极或Al(铝)电极时，电极层的厚度不同，上述层状温补型声表面波谐振器的机电耦合系数K 2也会不同，对应机电耦合系数K 2的峰值均出现在电极层的厚度约为0.1λ时。
其中，在达到同样的机电耦合系数时，Al电极一般要比Au电极的厚度大一些。
结合上述分析可知，本申请实施例中，在上述衬底层、温度补偿层、压电薄膜层、电极层依次采用SiC、SiO 2、LiTaO 3、Au制成时，可以使谐振器具有更好的功率耐受等性能与更小的尺寸。
在本申请另一种可行的实施方式中，上述衬底层采用SiC制成，温度补偿层采用SiO 2制成，压电薄膜层采用LiTaO 3制成。
其中，衬底层h1的厚度为110λ，温度补偿层的厚度h2为0.25λ，压电薄膜层的厚度h3为0.1λ，电极层的厚度h4为0.1λ。
请参照图5，图5为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图三。
从图5中可以看出，当温度补偿层的厚度h2大约为0.25λ时，上述层状温补型声表面波谐振器的机电耦合系数K 2达到峰值，K 2＝9.05％，h2大约在0.55λ至2.05λ及以上数值时，上述层状温补型声表面波谐振器的机电耦合系数K 2比较稳定，K 2＝8.83％。
请参照图6，图6为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图四。
从图6中可以看出，当压电薄膜层的厚度h3大约为在0.1λ时，上述层状温补型声表面波谐振器的机电耦合系数k 2达到峰值，K 2＝11.75％，压电薄膜层的厚度h3大约在1.2λ至10λ及以上数值时，上述层状温补型声表面波谐振器的机电耦合系数k 2比较稳定，K 2＝9％。
结合上述分析可知，本申请实施例中，上述衬底层、温度补偿层、压电薄膜层依次采用SiC、SiO2、LiTaO3制成，且衬底层h1的厚度为110λ， 温度补偿层的厚度h2为0.25λ，压电薄膜层的厚度h3为0.1λ，电极层的厚度h4为0.1λ时，可以使上述温补型声表面波谐振器具有较高的机电耦合系数。
在本申请又一种可行的实施方式中，上述衬底层采用SiC制成，温度补偿层采用SiO 2制成，压电薄膜层采用LiTaO 3制成。
其中，衬底层h1的厚度为110λ，温度补偿层的厚度h2为0.25λ，压电薄膜层的厚度h3为0.25λ，电极层的厚度h4为0.1λ。
请参照图7，图7为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图五。
在图7中，设置衬底层的厚度h1＝110λ，温度补偿层的厚度h2＝0.25λ，压电薄膜层的厚度h3＝8λ，电极层的厚度h4＝0.1λ。
从图7中可以看出，压电薄膜层的厚度h3为8λ时，在主模频率为1.9GHz～2.05GHz之间以及主模的高低频处都出现了杂波，特别是高频处，这些杂波可能会对滤波器的通带和带外造成性能的恶化，因此需要尽可能抑制这些杂波。
请参照图8，图8为本申请实施例中提供的层状温补型声表面波谐振器的参数仿真示意图六。
在图8中，设置衬底层的厚度h1＝110λ，温度补偿层的厚度h2＝0.25λ，电极层的厚度h4＝0.1λ。
从图8中可以看出，压电薄膜层的厚度h3为0.25λ时比h3为0.5λ时能够更好的抑制杂波。
例如，压电薄膜层的厚度h3为0.25λ时，高频处(2.4GHz至2.6GHz)的杂波能够得到比较好的抑制，只在更高频处(2.8GHz)出现一支杂波。
结合上述分析可知，本申请实施例中，上述衬底层、温度补偿层、压电薄膜层依次采用SiC、SiO2、LiTaO3制成，且衬底层h1的厚度为110λ，温度补偿层的厚度h2为0.25λ，压电薄膜层的厚度h3为0.25λ，电极层的厚度h4为0.1λ时，可以使上述温补型声表面波谐振器能够有效的抑制高频处的杂波。
进一步的，基于上述实施例中所描述的内容，本申请实施例中还提供 了一种层状温补型声表面波谐振器封装方法，参照图9，图9为本申请实施例中提供的一种层状温补型声表面波谐振器封装方法的流程示意图。本申请实施例中，上述封装方法包括：
S901、获取衬底层。
S902、在衬底层上制备温度补偿层，其中，衬底层与温度补偿层之间以晶圆键合方式结合为一体，温度补偿层采用正温度系数的材料。
S903、在温度补偿层上制备压电薄膜层，其中，温度补偿层与压电薄膜层之间以晶圆键合方式结合为一体。
S904、在压电薄膜层上制备电极层。
在一种可行的实施方式中，上述温度补偿层采用SiO 2制成。
在一种可行的实施方式中，上述电极层为叉指电极层；该叉指电极层采用以下材料中的至少一种材料制成：铝、铜、金以及铝铜合金。
在一种可行的实施方式中，上述压电薄膜层采用以下材料中的至少一种材料制成：LiTaO 3、LiNbO 3。
在一种可行的实施方式中，上述衬底层采用以下材料中的至少一种材料制成：Si和SiC。
在一种可行的实施方式中，上述电极层的厚度取值范围为0.06λ～0.15λ，压电薄膜层的厚度取值范围为0.05λ～10λ，温度补偿层的厚度取值范围为0.05λ～2.0λ,衬底层的厚度取值范围为30λ～150λ，其中，λ为电极层对应的波长。
在一种可行的实施方式中，上述衬底层采用SiC制成，温度补偿层采用SiO 2制成，压电薄膜层采用LiTaO 3制成，电极层采用金制成。
在一种可行的实施方式中，上述衬底层采用SiC制成，温度补偿层采用SiO 2制成，压电薄膜层采用LiTaO 3制成；温度补偿层的厚度为0.25λ，压电薄膜层的厚度为0.1λ，电极层的厚度为0.1λ，衬底层的厚度为110λ。
在一种可行的实施方式中，衬底层采用SiC制成，温度补偿层采用SiO 2制成，压电薄膜层采用LiTaO 3制成；温度补偿层的厚度为0.25λ，压电薄膜层的厚度为0.25λ，电极层的厚度为0.1λ，衬底层的厚度为110λ。
本申请实施例所提供的层状温补型声表面波谐振器封装方法，在声表 面波谐振器的衬底层与压电薄膜层之间还制备了温度补偿层，该温度补偿层采用正温度系数的材料制成，由此可以有效增强声表面波谐振器的温度稳定性；另外，通过优化上述声表面波谐振器中各层材料的参数，还能够保障声表面波谐振器具有较高的机电耦合系数，有利于实现低温漂、高频和大宽带的滤波器。
最后应说明的是：以上各实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述各实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的范围。

Claims (10)

  1. 一种层状温补型声表面波谐振器，其特征在于，包括衬底层、温度补偿层、压电薄膜层以及电极层；
    所述温度补偿层位于所述衬底层与所述压电薄膜层之间，且所述衬底层与所述温度补偿层之间、所述温度补偿层与所述压电薄膜层之间均以晶圆键合方式结合为一体；所述温度补偿层采用正温度系数的材料制成；
    所述电极层设置于所述压电薄膜层的表面。
  2. 根据权利要求1所述的层状温补型声表面波谐振器，其特征在于，所述温度补偿层采用二氧化硅SiO 2制成。
  3. 根据权利要求1所述的层状温补型声表面波谐振器，其特征在于，所述电极层为叉指电极层；所述叉指电极层采用以下材料中的至少一种材料制成：铝、铜、金以及铝铜合金。
  4. 根据权利要求1所述的层状温补型声表面波谐振器，其特征在于，所述压电薄膜层采用以下材料中的至少一种材料制成：钽酸锂LiTaO 3、铌酸锂LiNbO 3。
  5. 根据权利要求1所述的层状温补型声表面波谐振器，其特征在于，所述衬底层采用以下材料中的至少一种材料制成：硅Si、碳化硅SiC及蓝宝石。
  6. 根据权利要求1至5任一项所述的层状温补型声表面波谐振器，其特征在于，所述衬底层的厚度取值范围为30λ～150λ，所述温度补偿层的厚度取值范围为0.05λ～2.0λ，所述压电薄膜层的厚度取值范围为0.05λ～10λ，所述电极层的厚度取值范围为0.06λ～0.15λ，其中，λ为所述电极层对应的波长。
  7. 根据权利要求6所述的层状温补型声表面波谐振器，其特征在于，所述衬底层采用SiC制成，所述温度补偿层采用SiO 2制成，所述压电薄膜层采用LiTaO 3制成，所述电极层采用金制成。
  8. 根据权利要求6所述的层状温补型声表面波谐振器，其特征在于，所述衬底层采用SiC制成，所述温度补偿层采用SiO 2制成，所述压电薄膜层采用LiTaO 3制成；
    所述衬底层的厚度为110λ，所述温度补偿层的厚度为0.25λ，所述压 电薄膜层的厚度为0.1λ，所述电极层的厚度为0.1λ。
  9. 根据权利要求6所述的层状温补型声表面波谐振器，其特征在于，所述衬底层采用SiC制成，所述温度补偿层采用SiO 2制成，所述压电薄膜层采用LiTaO 3制成；
    所述衬底层的厚度为110λ，所述温度补偿层的厚度为0.25λ，所述压电薄膜层的厚度为0.25λ，所述电极层的厚度为0.1λ。
  10. 一种层状温补型声表面波谐振器封装方法，其特征在于，所述方法包括：
    获取衬底层；
    在所述衬底层上制备温度补偿层，所述衬底层与所述温度补偿层之间以晶圆键合方式结合为一体，所述温度补偿层采用正温度系数的材料；
    在所述温度补偿层上制备压电薄膜层，所述温度补偿层与所述压电薄膜层之间以晶圆键合方式结合为一体；
    在所述压电薄膜层上制备电极层。
PCT/CN2021/125505 2020-10-22 2021-10-22 层状温补型声表面波谐振器与封装方法 WO2022083717A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US18/137,749 US20230261633A1 (en) 2020-10-22 2023-04-21 Layered temperature-compensated surface acoustic wave resonator and packaging method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202011140903.1A CN112217490B (zh) 2020-10-22 2020-10-22 层状温补型声表面波谐振器与封装方法
CN202011140903.1 2020-10-22

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/137,749 Continuation US20230261633A1 (en) 2020-10-22 2023-04-21 Layered temperature-compensated surface acoustic wave resonator and packaging method

Publications (1)

Publication Number Publication Date
WO2022083717A1 true WO2022083717A1 (zh) 2022-04-28

Family

ID=74054882

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/125505 WO2022083717A1 (zh) 2020-10-22 2021-10-22 层状温补型声表面波谐振器与封装方法

Country Status (3)

Country Link
US (1) US20230261633A1 (zh)
CN (1) CN112217490B (zh)
WO (1) WO2022083717A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116094481A (zh) * 2023-04-12 2023-05-09 常州承芯半导体有限公司 弹性波装置、滤波装置和多工装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112217490B (zh) * 2020-10-22 2021-09-14 展讯通信（上海）有限公司 层状温补型声表面波谐振器与封装方法
CN113381725A (zh) * 2021-06-30 2021-09-10 中国电子科技集团公司第二十六研究所 一种利于小型化和扩大带宽的saw谐振器结构及saw滤波器
CN113411066A (zh) * 2021-06-30 2021-09-17 中国电子科技集团公司第二十六研究所 一种高频双声波模式的双saw谐振器结构及双saw滤波器
CN114244311A (zh) * 2021-12-22 2022-03-25 江苏卓胜微电子股份有限公司 一种声表面波谐振器及滤波器

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107567682A (zh) * 2014-12-17 2018-01-09 Qorvo美国公司 具有波限制结构的板波装置和制造方法
CN109724721A (zh) * 2019-01-21 2019-05-07 武汉大学 无引线封装的SiC高温压力传感器及其制造方法
CN109891612A (zh) * 2016-10-20 2019-06-14 天工方案公司 具有亚波长厚度的压电层的弹性波器件
CN110572136A (zh) * 2019-09-09 2019-12-13 杭州左蓝微电子技术有限公司 一种叉指换能器
US20200212876A1 (en) * 2018-12-28 2020-07-02 Skyworks Solutions, Inc. Acoustic wave device with transverse mode suppression
CN111614342A (zh) * 2020-04-20 2020-09-01 张家港声芯电子科技有限公司 一种声表面波滤波器及其制作方法
CN112217490A (zh) * 2020-10-22 2021-01-12 展讯通信（上海）有限公司 层状温补型声表面波谐振器与封装方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100495910C (zh) * 2003-10-29 2009-06-03 株式会社村田制作所 弹性表面波装置
CN104868873A (zh) * 2015-05-27 2015-08-26 上海交通大学 一种多层复合结构声表面波器件基底
CN107317560B (zh) * 2017-05-11 2021-01-05 华南理工大学 一种温度补偿表面声波器件及其制备方法
US11362640B2 (en) * 2018-07-17 2022-06-14 Ii-Vi Delaware, Inc. Electrode-defined unsuspended acoustic resonator

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107567682A (zh) * 2014-12-17 2018-01-09 Qorvo美国公司 具有波限制结构的板波装置和制造方法
CN109891612A (zh) * 2016-10-20 2019-06-14 天工方案公司 具有亚波长厚度的压电层的弹性波器件
US20200212876A1 (en) * 2018-12-28 2020-07-02 Skyworks Solutions, Inc. Acoustic wave device with transverse mode suppression
CN109724721A (zh) * 2019-01-21 2019-05-07 武汉大学 无引线封装的SiC高温压力传感器及其制造方法
CN110572136A (zh) * 2019-09-09 2019-12-13 杭州左蓝微电子技术有限公司 一种叉指换能器
CN111614342A (zh) * 2020-04-20 2020-09-01 张家港声芯电子科技有限公司 一种声表面波滤波器及其制作方法
CN112217490A (zh) * 2020-10-22 2021-01-12 展讯通信（上海）有限公司 层状温补型声表面波谐振器与封装方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116094481A (zh) * 2023-04-12 2023-05-09 常州承芯半导体有限公司 弹性波装置、滤波装置和多工装置
CN116094481B (zh) * 2023-04-12 2023-07-28 常州承芯半导体有限公司 弹性波装置、滤波装置和多工装置

Also Published As

Publication number Publication date
CN112217490B (zh) 2021-09-14
CN112217490A (zh) 2021-01-12
US20230261633A1 (en) 2023-08-17

Similar Documents

Publication Publication Date Title
WO2022083717A1 (zh) 层状温补型声表面波谐振器与封装方法
JP5182459B2 (ja) ラダー型弾性波フィルタ及びこれを用いたアンテナ共用器
JP5910763B2 (ja) 弾性波装置
JP4419961B2 (ja) 弾性境界波装置
JP4483785B2 (ja) 弾性境界波装置
WO2017043427A1 (ja) 弾性波装置、高周波フロントエンド回路及び通信装置
JP5648695B2 (ja) 弾性波装置及びその製造方法
WO2020130128A1 (ja) 弾性波装置、分波器および通信装置
WO2011158445A1 (ja) 弾性波素子
JPWO2004070946A1 (ja) 弾性境界波装置
JP2017175276A (ja) 弾性波共振器、フィルタおよびマルチプレクサ並びに弾性波共振器の製造方法
JP2010166592A (ja) 弾性境界波装置の製造方法及び弾性境界波装置
JP2014187568A (ja) 弾性波装置
WO2005099091A1 (ja) 弾性境界波フィルタ
JPWO2005086345A1 (ja) 弾性境界波装置
CN110710106B (zh) 弹性波装置、分波器及通信装置
WO2021114555A1 (zh) 电极具有空隙层的体声波谐振器、滤波器及电子设备
JPWO2010131450A1 (ja) アンテナ共用器
CN108039872A (zh) 一种用于高性能声表面波滤波器的谐振器结构设计
WO2020204045A1 (ja) 高次モード弾性表面波デバイス
JP7170402B2 (ja) 接合基板、弾性表面波素子、弾性表面波素子デバイスおよび接合基板の製造方法
JP2023060058A (ja) 弾性波共振器、フィルタおよびマルチプレクサ
JP7312562B2 (ja) 弾性波共振器およびその製造方法、フィルタ並びにマルチプレクサ
JP2012169760A (ja) 弾性表面波装置
CN114070257A (zh) 声波装置、滤波器及多路复用器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21882131

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 21882131

Country of ref document: EP

Kind code of ref document: A1