WO2022077555A1 - 控制组件、显示屏以及控制装置 - Google Patents

控制组件、显示屏以及控制装置 Download PDF

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Publication number
WO2022077555A1
WO2022077555A1 PCT/CN2020/123960 CN2020123960W WO2022077555A1 WO 2022077555 A1 WO2022077555 A1 WO 2022077555A1 CN 2020123960 W CN2020123960 W CN 2020123960W WO 2022077555 A1 WO2022077555 A1 WO 2022077555A1
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Prior art keywords
electrode
layer
disposed
light
drain
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PCT/CN2020/123960
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English (en)
French (fr)
Inventor
查宝
江淼
姚江波
张鑫
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US17/056,038 priority Critical patent/US11640212B2/en
Publication of WO2022077555A1 publication Critical patent/WO2022077555A1/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04104—Multi-touch detection in digitiser, i.e. details about the simultaneous detection of a plurality of touching locations, e.g. multiple fingers or pen and finger
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04106—Multi-sensing digitiser, i.e. digitiser using at least two different sensing technologies simultaneously or alternatively, e.g. for detecting pen and finger, for saving power or for improving position detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes

Definitions

  • the present application relates to the field of display, and in particular, to a control assembly, a display screen and a control device.
  • a display screen integrated with a touch function can only achieve short-range control, and with the development of human-computer interaction, such a display screen cannot meet actual needs.
  • the purpose of the present application is to provide a control assembly, a display screen and a control device integrating a touch function and a light control function.
  • the present application provides a control assembly, which is integrated into a display screen and includes a substrate, a light control structure and a touch control structure arranged side by side on the substrate, and the light control structure includes a signal input line, a signal an output line and a photosensitive circuit electrically connected between the signal input line and the signal output line, the touch control structure includes a plurality of receiving electrodes and a plurality of transmitting electrodes, and the receiving electrodes are multiplexed into the signal output Wire.
  • the photosensitive circuit includes a photosensitive transistor, and the light control structure includes a first gate, a first source, a first drain, and a first gate disposed on the first gate corresponding to the first gate.
  • a first active layer between a source electrode and the first drain electrode, the photosensitive circuit includes a first scan line, the first gate is connected to the first scan line, the first source The pole is connected to the signal input line.
  • the first drain of the photosensitive transistor is connected to the signal output line.
  • the photosensitive circuit further includes a switch transistor
  • the light control result further includes a second scan line
  • the switch transistor includes a second gate, a second source, a second drain and a corresponding A second active layer is disposed between the second source and the second drain on the second gate, the second gate is connected to the second scan line, and the second source The electrode is connected to the first drain, and the second drain is connected to the signal output line.
  • the transmitting electrode and the second gate electrode are disposed in the same layer, and the receiving electrode and the second drain electrode are disposed in the same layer.
  • the first active layer and the second active layer are provided in the same layer and have the same material, and the materials of the first active layer and the second active layer include photosensitive semiconductors,
  • the switching transistor further includes a light shielding layer, and the light shielding layer is disposed on the side of the second active layer away from the substrate, and is disposed corresponding to the second active layer.
  • the photosensitive circuit further includes a storage capacitor, a first electrode plate of the storage capacitor is connected to the first drain electrode, and a second electrode plate is connected to the first scan line.
  • the photosensitive circuit further includes a storage capacitor, the first electrode plate of the storage capacitor is connected between the first drain electrode and the second source electrode, and the second electrode plate is connected to the the first scan line.
  • the light control structure includes the first electrode layer disposed on the substrate, a semiconductor layer disposed on the first electrode layer, and a first electrode layer disposed on the semiconductor layer.
  • the emitter electrode is disposed in the same layer as one of the first electrode layer, the second electrode layer and the light shielding layer, the receiving electrode It is provided in the same layer as the other one of the first electrode layer, the second electrode layer and the light shielding layer.
  • control assembly further includes a driving structure, the light control structure and the touch control structure are electrically connected to the driving structure, and the driving structure is used for time-division driving the light control structure and the touch control structure.
  • the present application provides a display screen, which includes a display panel and a control assembly attached to a display side of the display panel, where the control assembly is the control assembly described above.
  • the present application also provides a control device, which includes the above-mentioned display screen and a light-emitting component, the light-emitting component is used for emitting light to the display screen, and the control component of the display screen is used for detecting the light emitted by the light-emitting component where the light is incident on the display screen.
  • the application adopts the on-glass structure to integrate the light control structure and the touch control structure, and the light control and touch functions can be integrated into the display screen synchronously, so as to realize the functions of short-range touch and remote light control, and make up for the single-function touch. Or the insufficiency of light control. It is especially beneficial to realize the functions of light control and touch synchronously on the large-size display screen.
  • FIG. 1 is a schematic diagram of a control device provided by a first embodiment of the present application.
  • FIG. 2 is a partial cross-sectional view of the display screen provided by the first embodiment of the present application.
  • FIG. 3 is a schematic top view of a control assembly of a display screen according to the first embodiment of the present application.
  • FIG. 4 is a schematic top view of a control unit in FIG. 2 .
  • FIG. 5 is a partial cross-sectional view of a display screen provided by another embodiment of the present application.
  • FIG. 6 is a partial cross-sectional view of a display screen provided by another embodiment of the present application.
  • FIG. 7 is a partial cross-sectional view of a display screen according to another embodiment of the present application.
  • FIG. 8 is an equivalent circuit diagram of a control unit in FIG. 2 .
  • FIG. 9 is a schematic block diagram of a control component of a display screen according to the first embodiment of the present application.
  • FIG. 10 is a driving waveform diagram of a control component of a display screen according to an embodiment of the present application.
  • FIG. 11 is an equivalent circuit diagram of a control unit in the control device provided by the second embodiment of the present application.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be mechanical connection, electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction of two elements relation.
  • installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be mechanical connection, electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction of two elements relation.
  • the present application provides a control device 1 , which includes a display screen 100 and a light-emitting component 200 .
  • the light emitting component 200 is used for emitting light to the display screen 100
  • the display screen 100 is used for detecting the position where the light emitted by the light emitting component 200 enters the display screen 100 .
  • the display screen 100 may include, for example, a smartphone, a tablet personal computer, a mobile phone phone), video phone, e-book reader, desktop PC, laptop PC), netbook computer, workstation, server or personal digital assistant digital assistant) and so on.
  • the display screen 100 may be an active light-emitting display screen, such as an organic light-emitting diode (Organic Light Emitting Diode).
  • OLED organic light-emitting diode
  • AMOLED Active-matrix organic light-emitting diode
  • PMOLED passive matrix organic light emitting diode
  • QLED quantum dot organic light-emitting diode
  • the light emitting assembly 200 may be a laser pointer.
  • the light emitting assembly 200 can emit visible light and infrared light. In one embodiment, its detectable wavelength range is 380-850 nm.
  • the display screen 100 includes a display panel 10 , a control component 20 attached to the display side of the display panel 10 , and a cover glass 30 covering the side of the control component 20 away from the display panel 10 .
  • the optical glue 40 may be used for bonding.
  • a display screen with integrated display and control functions is formed.
  • the display screen 100 of the present application may be a small or medium-sized display screen, or a large-sized display screen.
  • the display screen 100 is a liquid crystal display screen.
  • the display panel 10 is a liquid crystal display panel.
  • the present application does not limit the type of the liquid crystal display panel 10, which may be a vertical electric field type liquid crystal display panel, such as a twisted nematic (Twisted nematic) nematic, TN) type liquid crystal display panel, multi-domain vertical alignment (Multi-domain vertical alignment) vertical alignment, MVA) type liquid crystal display panel, or horizontal electric field type liquid crystal display panel, such as fringe field switching (FFS) type liquid crystal display panel or in-plane switching (In-plane switching) type liquid crystal display panel switching, IPS) type liquid crystal display panel.
  • FFS fringe field switching
  • In-plane switching In-plane switching
  • the liquid crystal display panel 10 includes an array substrate 11 and an opposite substrate 12 disposed opposite to each other, and a liquid crystal layer 13 disposed between the array substrate 11 and the opposite substrate 12 .
  • the array substrate 11 is an array substrate
  • the opposite substrate 12 is a color filter substrate.
  • the present application also does not limit the types of the array substrate 11 and the opposite substrate 12 .
  • the array substrate 11 and the opposite substrate 12 may be COA (color filter on array) type array substrates and opposite substrates.
  • the cover glass 30 may be, for example, transparent glass or transparent plastic.
  • the control assembly 20 is disposed between the display panel 10 and the cover plate 30 .
  • the control module 20 includes a substrate 50 and a light control structure 20 a and a touch control structure 20 b disposed on the substrate 50 .
  • the light emitted by the light emitting assembly 200 is irradiated to the display screen 100 and detected by the light control structure 20a to determine the position of the light.
  • the light control structure 20a is used to detect visible light and infrared light, and the wavelength range that can be detected is 380-850 nm.
  • the light control structure 20a can be used together with the light emitting assembly 200 .
  • the touch structure 20b is a module for detecting a user's touch action. In the present application, the touch structure 20b is a capacitive touch structure.
  • the display screen 100 includes a display area and a non-display area.
  • the light control structure 20a and the touch control structure 20b are disposed throughout the entire display area.
  • the control assembly 20 includes a plurality of control units 210 . Only nine control units 210 in three rows and three columns are shown in the figure, but the number of control units 210 in the present application is not limited to nine.
  • Each control unit 210 integrates a minimum unit of the light control structure 20a and a minimum unit of the touch control structure 20b.
  • the light control structure 20a includes a plurality of photosensitive circuits 210a.
  • Each control unit 210 includes a photosensitive circuit 210a.
  • the photosensitive circuit 210a is a 2T1C circuit. That is, two thin film transistors (Thin Film Transistor, TFT), a circuit composed of a photosensitive transistor T1, a switching transistor T2 and a storage capacitor C.
  • TFT Thin Film Transistor
  • the present application does not limit the specific circuit structure of the photosensitive circuit 210a, as long as the photosensitive detection can be completed.
  • the circuit structure of the photosensitive sensor can also be 3T1C, 4T1C or 5T1C.
  • the photosensitive transistor T1 includes a first gate G1, a first source S1, a first drain D1, and a first active layer disposed between the first source S1 and the first drain D1 corresponding to the first gate G1 CL1.
  • the switching transistor T2 includes a second gate G2, a second source S2, a second drain D2, and a second active layer disposed between the second source S2 and the second drain D2 corresponding to the second gate G2 CL2. It should be noted that the partial cross-sectional view of FIG. 1 only shows the structures of the photosensitive transistor T1 and the switching transistor T2, and the storage capacitor C is not drawn.
  • the material of the first active layer CL1 of the photosensitive transistor T1, or the photosensitive semiconductor may include amorphous silicon, poly(3-hexylthiophene) (P3HT), and the like.
  • P3HT is an organic material with both photosensitive and semiconducting properties.
  • the material of the active layer of the second active layer CL2 of the switching transistor T2 may include amorphous silicon (a-Si:H), polysilicon (low temperature polysilicon and high temperature polysilicon), oxide semiconductor (eg IGZO) and the like. That is to say, its materials may include photosensitive semiconductor materials or non-photosensitive semiconductor materials.
  • the first active layer CL1 and the second active layer CL2 are both amorphous silicon. Also, the first active layer CL1 and the second active layer CL2 are provided in the same layer. The first active layer CL1 and the second active layer CL2 may be fabricated with the same material in the same step to reduce the fabrication process.
  • the control element 20 further includes a light shielding layer 25 .
  • the light shielding layer 25 is disposed on the side of the second active layer CL2 away from the substrate 50 .
  • the light shielding layer 25 is disposed corresponding to the second channel layer CL2 of the switching transistor T2 to prevent light from affecting the switching transistor T2.
  • the material of the light shielding layer 25 can be metal or black ink.
  • the touch structure 20b is a mutual capacitive touch structure 20b.
  • the touch control structure 20b includes a plurality of receiving electrodes Rx and a plurality of transmitting electrodes Tx.
  • the plurality of emitter electrodes Tx extend along the first direction D1 and are spaced apart in the second direction D2.
  • the plurality of receiving electrodes Rx extend along the second direction D2 and are arranged at intervals in the first direction D1.
  • Each receiving electrode Rx is electrically connected to the signal output end of the photosensitive circuit 210a, that is, the receiving electrode Rx of the touch control structure 20b is multiplexed into the signal output line OL of the light control structure 20a. By this multiplexing, the configuration of the control unit 20 can be simplified.
  • the light control structure 20a can be divided into a first electrode layer 21 disposed on the substrate 50, a semiconductor layer 22 disposed on the first electrode layer 21, a second electrode layer 23 disposed on the semiconductor layer 22, and the third electrode layer 24 and the light shielding layer 25 disposed on the semiconductor layer 22 .
  • the light shielding layer 25 is disposed corresponding to the second channel layer CL2 of the switching transistor T2.
  • the third electrode layer 24 and the light shielding layer 25 may be provided in the same layer, or may be provided in different layers.
  • the first electrode layer 21 and the second electrode layer 23 are separated by an insulating layer.
  • the semiconductor layer 22 , the second electrode layer 23 and the third electrode layer 24 are separated by an insulating layer.
  • the emitter electrode Tx may be provided in the same layer as one of the first electrode layer 21 , the second electrode layer 23 and the light shielding layer 25 .
  • the receiving electrode Rx may be provided in the same layer as the other of the first electrode layer 21 , the second electrode layer 23 and the light shielding layer 25 .
  • the emitter electrode Tx and the first electrode layer 21 are provided in the same layer.
  • the receiving electrode Rx is provided in the same layer as the second electrode layer 23 .
  • the materials of the first electrode layer 21 and the second electrode layer 23 may be metals.
  • the material of the third electrode layer may be indium tin oxide.
  • the materials of the receiving electrode Rx and the transmitting electrode Tx may be metal materials, such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W) It can also be a transparent conductive material, such as a transparent conductive metal oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), oxide Zinc aluminum (AZO) and so on.
  • metal materials such as gold (Au), silver (Ag), copper (Cu), aluminum (Al), molybdenum (Mo), magnesium (Mg), tungsten (W)
  • a transparent conductive material such as a transparent conductive metal oxide, such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), oxide Zinc aluminum (AZO) and so on.
  • the first electrode layer 21 includes a first gate G1 and a second gate G2.
  • the semiconductor layer 22 includes a first active layer CL1 and a second active layer CL2.
  • the second electrode layer 23 includes a first source electrode S1, a first drain electrode D1, a second source electrode S2 and two drain electrodes D2.
  • the third electrode layer 24 includes peripheral traces of the receiving electrodes Rx.
  • the peripheral wiring of the receiving electrode Rx is electrically connected to the receiving electrode Rx through the through hole opened in the insulating layer.
  • the emitter electrode Tx may be disposed in the same layer as one of the second gate electrode G2 , the second drain electrode D2 and the light shielding layer 25 .
  • the receiving electrode Rx is disposed in the same layer as the other one of the second gate electrode G2 , the second drain electrode D2 and the light shielding layer 25 . It should be noted that the transmitting electrode Tx and the receiving electrode Rx are arranged in different layers.
  • the plurality of receiving electrodes Rx are electrically connected to the second drain electrode D2 of the switching transistor T2 and are arranged in the same layer.
  • the plurality of emitter electrodes Tx and the second gate G2 of the switching transistor are insulated from each other and arranged in the same layer.
  • the switching transistor is a bottom-gate transistor.
  • the switching transistor may also be other types of transistors, such as a top-gate transistor, a double-gate transistor, and the like.
  • the light shielding layer 25 may be disposed between the substrate 50 and the first electrode layer 21 .
  • the transmitting electrode Tx and the light shielding layer 25 are disposed in the same layer, and the receiving electrode Rx and the second electrode layer 23 are disposed in the same layer and are electrically connected.
  • the emitter electrode Tx is disposed on the same layer as the first electrode layer 21
  • the receiving electrode Rx is disposed on the same layer as the light shielding layer 25
  • the emitter electrode Tx is disposed on the same layer as the light shielding layer 25
  • the receiving electrode Rx is disposed on the same layer as the first electrode layer 21 and is electrically connected to the second drain electrode D2 by opening a via hole in the insulating layer.
  • other embodiments are not listed one by one here.
  • the light control structure 20 a includes a first scan line GL1 , a second scan line GL2 , a signal input line IL and a signal output line (Readout) OL, and is connected to the signal input line IL and the signal output line (Readout)
  • the photosensitive circuit 210a between the OLs.
  • the signal input end of the photosensitive circuit 210a is connected to the signal input line IL, and the signal output end is connected to the signal output line OL.
  • the first scan line GL1 and the second scan line GL2 extend along the first direction D1 and are spaced apart in the second direction D2.
  • the signal input line IL and the signal output line OL extend along the second direction D2 and are spaced apart in the first direction D1.
  • the first direction D1 and the second direction D2 may be perpendicular to each other.
  • the first scan line GL1, the second scan line GL2, the signal input line IL and the signal output line OL intersect to form a rectangle.
  • the shape enclosed by the first scan line GL1, the second scan line GL2, the signal input line IL and the signal output line OL can also be one of a triangle, a rhombus, a hexagon, and an octagon. one or more to form a grid-like structure.
  • the interval between the first scan line GL1 and the second scan line GL2 may range from 0.1 mm to 4 mm.
  • the interval range between the signal input line IL and the signal output line OL may also be between 0.1 mm and 4 mm.
  • the first gate G1 is connected to the first scan line GL1.
  • the first source S1 is connected to the signal input line IL.
  • the second gate G2 is connected to the second scan line GL2.
  • the second source S2 is connected to the first drain D1 of the photosensitive transistor T1.
  • the second drain D2 is connected to the signal output line OL.
  • the first plate C1 of the storage capacitor C is connected between the output end of the photosensitive transistor T1 and the input end of the switching transistor T2, that is, between the first drain electrode D1 and the second source electrode S2.
  • the second electrode plate C2 is connected to the first scan line GL1.
  • the signal output line OL is connected to an integrating amplifier IA. Specifically, it is connected to the negative pole of an integrating amplifier IA, and the positive pole of the integrating amplifier IA is provided with a reference voltage Vref.
  • the control assembly 20 further includes a driving structure 20c.
  • the light control structure 20a and the touch control structure 20b are electrically connected to the driving structure 20c, and the driving structure 20c is used to drive the light control structure 20a and the touch control structure 20b in a time-sharing manner.
  • the driving structure 20c may include a driving chip (Integrated Circuit, IC). Therefore, the light control structure 20a and the touch control structure 20b can share the driving chip.
  • the emitter electrode Tx and the signal input line IL of the light control structure 20a are electrically connected to the driving structure 20c.
  • the driving structure 20c drives the control component 20 of the display screen 100 in the following manner.
  • Figure 10 is respectively from top to bottom: the driving waveform diagram of driving the emitter electrode Tx alone; the driving waveform diagram of driving the photosensitive transistor T1 alone; and the driving waveform diagram of time-division driving the emitter electrode Tx and the photosensitive transistor T1 .
  • a touch drive signal Vt is provided to the emitter electrode Tx, and in the second time period t2, a first low level is provided Vl1.
  • a scanning driving signal Vs is provided to the first gate G1 of the photosensitive transistor T1, and in the fourth time period t4, a scanning driving signal Vs is provided.
  • one driving period T sequentially includes a first time period t1, a second time period t2', a third time period t3 and a fourth time period t4'.
  • a touch driving signal Vt is provided to the emitter electrode Tx.
  • a first low level Vl1 is supplied to the emitter electrode Tx.
  • the first low level may be 0V.
  • a scanning driving signal Vs is provided to the first gate G1 of the photosensitive transistor T1
  • a second low voltage is provided to the first gate G1 of the photosensitive transistor T1 Flat Vl2.
  • the second low level V12 may be 0V.
  • the driving method can be used in the control assembly of the present application, and is not limited to the structure of the photosensitive circuit 210a, such as 1T, 1T1C, 2T1C circuits, and the like.
  • the working principle of the light control structure 20a is: when the user operates the external light-emitting element to control the display screen 100, the light emitted by the external light-emitting element irradiates the light control structure 20a to make the amorphous silicon in the photosensitive transistor T1.
  • the carriers are generated, collected by the storage capacitor C, and then controlled by the switching transistor T2, processed by the integrating amplifier IA and detected by the driving IC of the driving structure 20c, thereby determining the light irradiation position.
  • the working principle of the touch control structure 20b is as follows: when the user touches the display screen 10, the projected capacitance between the transmitting electrode Tx and the receiving electrode Rx will change, and it is detected by the driving chip after being processed by the integrating amplifier IA.
  • the signal can determine where the user touched.
  • the signal output line OL in the light control structure 20a and the receiving electrode Rx in the touch control structure 20b are time-division multiplexed.
  • the sensor receives a touch signal or a photosensitive signal, the change in charge generated by the sensor can be transmitted through the signal output line OL. , and is processed by the integrating amplifier IA, so that the coordinate position of the touch or the coordinate position of the light-sensing can be accurately located.
  • the resolutions of the light control structure 20a and the touch control structure 20b are the same, that is, the minimum unit of the light control structure 20a corresponds to the minimum unit of the touch control structure 20b one-to-one. In another embodiment, the resolutions of the light control structure 20a and the touch control structure 20b are different, that is, the minimum units of the light control structure 20a and the touch control structure 20b are not in one-to-one correspondence.
  • the number of the minimum units of the light control structure 20a is greater than the number of the minimum units of the touch control structure 20b, only a part of the signal output lines OL of the photosensitive circuit 210a are multiplexed into the receiving electrodes Rx, and a part of the signal output lines OL are not connected to The touch structure 20b.
  • the number of the minimum units of the light control structure 20a is smaller than the number of the minimum units of the touch control structure 20b, then only part of the receiving electrodes Rx are multiplexed into the signal output line OL of the photosensitive circuit 210a, and the other part of the receiving electrodes Rx are not connected to the light control structure 20a.
  • the control device 1 of this embodiment is substantially the same as the control device 1 of the first embodiment, and the difference lies in the structure of the photosensitive circuit 210 a of the light control structure.
  • the photosensitive circuit 210a of this embodiment only includes a photosensitive transistor T1 and a storage capacitor C. As shown in FIG.
  • the photosensitive transistor T1 is also used as a switching transistor.
  • the light control structure 20a includes a signal input line IL and a first scan line GL1, the first gate G1 of the photosensitive transistor T1 is connected to the first scan line GL1, and the first source S1 of the photosensitive transistor T1 is connected to the signal input line IL, the first drain D1 of the photosensitive transistor T1 is connected to the receiving electrode Rx.
  • the first electrode plate C1 of the storage capacitor C is connected to the output end of the photosensitive transistor T1, that is, the first drain electrode D1, and the second electrode plate C2 is connected to the first scan line GL1.
  • the storage capacitor C can also be omitted, and the photosensitive circuit 210a is only composed of one photosensitive transistor T1.
  • the application adopts the on-glass structure, integrates the light control structure and the touch structure, and can simultaneously integrate the light control and touch functions into the display screen, so as to realize the functions of short-range touch and long-distance light control, and make up for the touch of a single function.
  • the shortcomings of control or light control It is especially beneficial to realize the functions of light control and touch synchronously on the large-size display screen.
  • the signal output line and the receiving electrode in the light control sensor and the touch sensor are combined and time-division multiplexed, which can simplify the structure of the display screen and reduce the cost.
  • the light control structure and the touch control structure are driven by the same driving structure, which is conducive to the integration of the light control and touch control chips, and it is more convenient to bind the integrated control components and the display panel together, which can simplify the structure and save the manufacturing process.

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Abstract

提供一种控制组件(20)、显示屏(100)以及控制装置(1)。所述控制组件(20)集成于显示屏(100)中，包括衬底(50)和并排设置于所述衬底(50)上的光控结构(20a)和触控结构(20b)，所述光控结构(20a)包括信号输入线(IL)、信号输出线(OL)以及电连接于所述信号输入线(IL)和所述信号输出线(OL)之间的感光电路(210a)，所述触控结构(20b)包括多个接收电极(Rx)和多个发射电极(Tx)，所述接收电极(Rx)复用为所述信号输出线(OL)。

Description

控制组件、显示屏以及控制装置 技术领域
本申请涉及显示领域，尤其涉及一种控制组件、显示屏以及控制装置。
 背景技术
市面上的显示屏，尤其是中小尺寸的显示屏通常整合有触控功能。然而，整合有触控功能的显示屏只能实现短程控制，随着人机交互的发展，该种显示屏无法满足实际需求。
 技术问题
有鉴于此，本申请目的在于提供一种整合有触控功能和光控功能的控制组件、显示屏以及控制装置。
 技术解决方案
本申请提供一种控制组件，所述控制组件集成于显示屏中，包括衬底和并排设置于所述衬底上的光控结构和触控结构，所述光控结构包括信号输入线、信号输出线以及电连接于所述信号输入线和所述信号输出线之间的感光电路，所述触控结构包括多个接收电极和多个发射电极，所述接收电极复用为所述信号输出线。
在一种实施方式中，所述感光电路包括一感光晶体管，所述光控结构包括第一栅极、第一源极、第一漏极以及对应于所述第一栅极设置于所述第一源极和所述第一漏极之间的第一有源层，所述感光电路包括一第一扫描线，所述第一栅极连接于所述第一扫描线，所述第一源极连接于所述信号输入线。
在一种实施方式中，所述感光晶体管的第一漏极连接于所述信号输出线。
在一种实施方式中，所述感光电路还包括一开关晶体管，所述光控结果还包括第二扫描线，所述开关晶体管包括第二栅极、第二源极、第二漏极以及对应于所述第二栅极设置于所述第二源极和所述第二漏极之间第二有源层，所述第二栅极连接于所述第二扫描线，所述第二源极连接于所述第一漏极，所述第二漏极连接于所述信号输出线。
在一种实施方式中，所述发射电极与所述第二栅极同层设置，所述接收电极与第二漏极同层设置。
在一种实施方式中，所述第一有源层与所述第二有源层同层设置且材料相同，所述第一有源层与所述第二有源层的材料包括光敏半导体，所述开关晶体管还包括一遮光层，所述遮光层设置于所述第二有源层远离所述衬底一侧，并对应所述第二有源层设置。
在一种实施方式中，所述感光电路还包括一存储电容，所述存储电容的第一极板连接于所述第一漏极，第二极板连接于所述第一扫描线。
在一种实施方式中，所述感光电路还包括一存储电容，所述存储电容的第一极板连接于所述第一漏极与所述第二源极之间，第二极板连接于所述第一扫描线。
在一种实施方式中，所述光控结构包括设置于所述衬底上的所述第一电极层，设置于所述第一电极层上的半导体层，设置于所述半导体层上的第二电极层、以及设置于所述半导体层上的遮光层，所述发射电极与所述第一电极层、所述第二电极层和所述遮光层中的一个同层设置，所述接收电极与所述第一电极层、所述第二电极层和所述遮光层中的另一个同层设置。
在一种实施方式中，所述控制组件还包括一驱动结构，所述光控结构和所述触控结构电连接至所述驱动结构，所述用于驱动结构用于分时驱动所述光控结构和所述触控结构。
本申请提供一种显示屏，其包括显示面板以及贴合与所述显示面板的显示侧的控制组件，所述控制组件为如上所述的控制组件。
本申请还提供一种控制装置，其包括如上述的显示屏和一发光组件，所述发光组件用于发射光线至所述显示屏，所述显示屏的控制组件用于检测所述发光组件发出的光线射入至所述显示屏的位置。
 有益效果
本申请采用on-glass结构整合光控结构和触控结构，可将光控和触控功能同步集成在显示屏之中，以实现短程触控，远程光控的功能，弥补单一功能的触控或者光控的不足之处。特别有利于大尺寸显示屏同步实现光控和触控的功能。
 附图说明
为了更清楚地说明本申请中的技术方案，下面将对实施方式描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施方式，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请第一实施方式提供的控制设备的示意图。
图2为本申请第一实施方式提供的显示屏的部分剖视图。
图3为本申请第一实施方式提供的显示屏的控制组件的俯视示意图。
图4为图2中的一个控制单元的俯视示意图。
图5为本申请另一实施方式提供的显示屏的部分剖视图。
图6为本申请又一实施方式提供的显示屏的部分剖视图。
图7为本申请再一实施方式提供的显示屏的部分剖视图。
图8为图2中的一个控制单元的等效电路图。
图9为本申请第一实施方式提供的显示屏的控制组件的模块示意图。
图10为本申请一实施方式提供的显示屏的控制组件的驱动波形图。
图11为本申请第二实施方式提供的控制设备中的一个控制单元的等效电路图。
 本发明的实施方式
在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
请参考图1，本申请提供一种控制装置1，其包括显示屏100和发光组件200。发光组件200用于发射光线至显示屏100，显示屏100用于检测发光组件200发出的光线射入至显示屏100的位置。
根据本发明各种实施例的显示屏100可以例如包括智能手机(smartphone)、平板电脑(tablet personal computer)、移动电话(mobile phone)、视频电话机、电子书阅读器(e-book reader)、台式计算机(desktop PC)、手提电脑(laptop PC)、上网本(netbook computer)、工作站(workstation)、服务器或个人数字助理(personal digital assistant)等中的至少一个。
显示屏100可以为主动发光型显示屏，例如有机发光二极管（Organic light-emitting diode，OLED）显示屏，主动矩阵有机发光二极管（Active-matrix organic light-emitting diode，AMOLED）显示屏，被动矩阵有机发光二极管(Passive matrix organic light-emitting diode，PMOLED)显示屏、量子点有机发光二极管（Quantum dot light-emitting diodes，QLED）显示屏、微发光二极管（Micro light-emitting diode，Micro-LED）显示屏以及次毫米发光二极管（Mini light-emitting diode，Mini-LED）显示屏等；也可以为被动发光型显示屏，例如液晶显示（Liquid crystal display，LCD）装置。
发光组件200可以是激光笔。发光组件200能够发出可见光及红外光。在一个实施方式中，其可以检测的波长范围为380~850nm。
请一并参考图2至图4，显示屏100包括显示面板10、贴合于显示面板10的显示侧的控制组件20以及覆盖于控制组件20远离显示面板10一侧的盖板玻璃30。其中，显示面板10与控制组件20之间，控制组件20与盖板玻璃30之间可以通过光学胶40贴合。由此，形成集成有显示和控制功能的显示屏。本申请的显示屏100可以是中小尺寸显示屏，也可以是大尺寸显示屏。
在本申请中，显示屏100为液晶显示屏。显示面板10为液晶显示面板。本申请不限定液晶显示面板10的类型，其可以为垂直电场型液晶显示面板，例如扭曲向列(Twisted nematic，TN)型液晶显示面板，多畴垂直配向（Multi-domain vertical alignment，MVA）型液晶显示面板，也可以是水平电场型液晶显示面板，例如边缘场开关（Fringe field switching，FFS）型液晶显示面板或者面内转换（In-plane switching，IPS）型液晶显示面板。
液晶显示面板10包括相对设置的阵列基板11和对向基板12以及设置于阵列基板11和对向基板12之间的液晶层13。在本实施方式中，阵列基板11为阵列基板，对向基板12为彩膜基板。本申请也不限定阵列基板11和对向基板12的类型。在本申请其他实施方式中，阵列基板11和对向基板12可以为COA(color filter on array)型的阵列基板和对向基板。盖板玻璃30可以是例如透明玻璃或者透明塑料。
控制组件20设置于显示面板10与盖板30之间。控制模组20包括衬底50和设置在衬底50上的光控结构20a和触控结构20b。发光组件200发出的光被照射至显示屏100，被光控结构20a检测到从而确定光线的位置。在一个实施方式中，光控结构20a用于检测可见光及红外光，其可以检测的波长范围为380~850nm。光控结构20a可以配合发光组件200一起使用。触控结构20b是用于检测用户触摸动作的模块。在本申请中，触控结构20b为电容式触控结构。在一个实施方式中，显示屏100包括显示区和非显示区。光控结构20a和触控结构20b遍布整个显示区设置。
如图3所示，控制组件20包括多个控制单元210。图中仅示出三行三列共计9个控制单元210，但本申请的控制单元210的个数不限于9个。每一控制单元210集成有光控结构20a的一个最小单元和触控结构20b的一个最小单元。
如图4所示，光控结构20a包括多个感光电路210a。每一控制单元210中包含有一感光电路210a。在本实施方式中，感光电路210a为2T1C电路。即由两个薄膜晶体管（Thin Film Transistor，TFT），一个感光晶体管T1，一个开关晶体管T2和一个存储电容C构成的电路。
另外，本申请不限定感光电路210a的具体电路结构，只要能完成感光检测即可。例如，感光传感器的电路结构也可以为3T1C，4T1C或者5T1C。
感光晶体管T1包括第一栅极G1、第一源极S1、第一漏极D1以及对应于第一栅极G1设置于第一源极S1和第一漏极D1之间的第一有源层CL1。开关晶体管T2包括第二栅极G2、第二源极S2、第二漏极D2以及对应于第二栅极G2设置于第二源极S2和第二漏极D2之间的第二有源层CL2。需要注意的是，图1的部分剖视图仅示出感光晶体管T1和开关晶体管T2的结构，没有绘出存储电容C。
感光晶体管T1的第一有源层CL1，或者说光敏半导体的材料可以包括非晶硅、聚(3-己基噻吩)(P3HT)等。P3HT是一种兼具感光性能和半导体性能的有机材料。开关晶体管T2的第二有源层CL2有源层的材料可以包括非晶硅（a-Si：H）、多晶硅(低温多晶硅与高温多晶硅)、氧化物半导体(例如IGZO)等。也就是说，其材料可以包括光敏半导体材料也可以包括非光敏半导体材料。
在本实施方式中，第一有源层CL1和第二有源层CL2均为非晶硅。并且，第一有源层CL1和第二有源层CL2同层设置。第一有源层CL1和第二有源层CL2可以在同一个步骤中以相同材料制造，以减少制造工序。当第二有源层CL2的材料包括光敏半导体材料时，控制组件20还包括一遮光层25。遮光层25设置于所述第二有源层CL2远离衬底50的一侧。遮光层25对应开关晶体管T2的第二沟道层CL2设置以防止光线对开关晶体管T2造成影响。遮光层25的材料可以为金属或者黑色油墨。
触控结构20b为互容式触控结构20b。触控结构20b包括多个接收电极Rx和多个发射电极Tx。多个发射电极Tx沿第一方向D1延伸，且在第二方向D2上间隔设置。多个接收电极Rx沿第二方向D2延伸，且在第一方向D1上间隔设置。每一接收电极Rx电连接于感光电路210a的信号输出端，即触控结构20b的接收电极Rx复用为光控结构20a的信号输出线OL。通过该复用，能够简化控制组件20的结构。
另一方面，光控结构20a可以分为设置于衬底50上的第一电极层21，设置于第一电极层21上的半导体层22，设置于半导体层22上的第二电极层23、以及设置于半导体层22上的第三电极层24和遮光层25。遮光层25对应开关晶体管T2的第二沟道层CL2设置。第三电极层24和遮光层25可以同层设置，也可以不同层设置。第一电极层21和第二电极层23之间通过绝缘层隔开。半导体层22、第二电极层23与第三电极层24之间通过绝缘层隔开。发射电极Tx可以与第一电极层21、第二电极层23和遮光层25中的一个同层设置。接收电极Rx可以与第一电极层21、第二电极层23和遮光层25中的另一个同层设置。
在本实施方式中，发射电极Tx与第一电极层21同层设置。接收电极Rx与第二电极层23同层设置。其中，第一电极层21和第二电极层23的材料可以为金属。第三电极层的材料可以为氧化铟锡。接收电极Rx和发射电极Tx的材料可以是金属材料，例如为金(Au)、银(Ag)、铜(Cu)、铝(Al)、钼(Mo)、镁(Mg)、钨(W)等金属以或以上金属组合而成的合金材料；也可以是透明导电材料，例如为透明导电金属氧化物，如氧化铟锡(ITO)、氧化铟锌(IZO) 、氧化锌(ZnO)、氧化锌铝(AZO)等。
在一个具体的实施方式中，第一电极层21包括第一栅极G1、第二栅极G2。半导体层22包括第一有源层CL1和第二有源层CL2。第二电极层23包括第一源极S1、第一漏极D1、第二源极S2以及二漏极D2。第三电极层24包括接收电极Rx的外围走线。接收电极Rx的外围走线的通过开设于绝缘层中的通孔与接收电极Rx电连接。发射电极Tx可以与第二栅极G2、第二漏极D2和遮光层25中的一个同层设置。接收电极Rx与第二栅极G2、第二漏极D2和遮光层25中的另一个同层设置。需要注意的是，发射电极Tx与接收电极Rx不同层设置。
在一个具体的实施方式中，多个接收电极Rx与开关晶体管T2的第二漏极D2电连接并同层设置。多个发射电极Tx与开关晶体管的第二栅极G2相互绝缘并同层设置。
本实施方式中，示出了开关晶体管为底栅型晶体管的例子，在本申请其他实施方式中，开关晶体管也可以是其他类型的晶体管，例如顶栅型晶体管，双栅型晶体管等。当开关晶体管为底栅型晶体管时，遮光层25可以设置于衬底50与第一电极层21之间。
在本申请其他实施方式中，请参考图5，发射电极Tx与遮光层25同层设置，接收电极Rx与第二电极层23同层设置并电连接。请参考图6，发射电极Tx与第一电极层21同层设置，接收电极Rx与遮光层25同层设置，并通过开设与绝缘层中的过孔与第二漏极D2电连接。请参考图7，发射电极Tx与遮光层25同层设置，接收电极Rx与第一电极层21同层设置并通过开设与绝缘层中的过孔与第二漏极D2电连接。此外，关于其他的实施方式，在此不一一列举。
请一并参考图4和图8，光控结构20a包括第一扫描线GL1、第二扫描线GL2、信号输入线IL和信号输出线（Readout）OL和连接于信号输入线IL与信号输出线（Readout）OL之间的感光电路210a。感光电路210a的信号输入端连接于信号输入线IL，信号输出端连接于信号输出线OL。其中，第一扫描线GL1与第二扫描线GL2沿第一方向D1延伸，在第二方向D2上间隔设置。信号输入线IL和信号输出线OL沿第二方向D2延伸，在第一方向D1上间隔设置。第一方向D1与第二方向D2可以相互垂直。第一扫描线GL1、第二扫描线GL2、信号输入线IL和信号输出线OL相交形成一矩形。除图中的矩形之外，第一扫描线GL1、第二扫描线GL2、信号输入线IL和信号输出线OL围成的形状也可以为三角形、菱形、六边形、八边形中的一种或多种，从而形成网格状结构。第一扫描线GL1、第二扫描线GL2之间的间隔范围可以为0.1mm~4mm之间。信号输入线IL和信号输出线OL之间的间隔范围也可以为0.1mm~4mm之间。
第一栅极G1连接于第一扫描线GL1。第一源极S1连接于信号输入线IL。第二栅极G2连接于第二扫描线GL2。第二源极S2连接于感光晶体管T1的第一漏极D1。第二漏极D2连接于信号输出线OL。存储电容C的第一极板C1连接于感光晶体管T1的输出端与开关晶体管T2的输入端，即第一漏极D1与第二源极S2之间。第二极板C2连接于第一扫描线GL1。信号输出线OL连接至一积分放大器IA。具体地，连接至一积分放大器IA的负极，积分放大器IA的正极被提供一个参考电压Vref。
请参考图9，控制组件20还包括一驱动结构20c。光控结构20a和触控结构20b电连接至驱动结构20c，驱动结构20c用于分时驱动光控结构20a和触控结构20b。驱动结构20c可以包括一驱动芯片（Integrated Circuit, IC）。由此，光控结构20a和触控结构20b可以共用该驱动芯片。发射电极Tx以及光控结构20a的信号输入线IL电连接至驱动结构20c。
请参考图10，驱动结构20c以以下方式驱动显示屏100的控制组件20。
图10从上到下分别为：单独对发射电极Tx进行驱动的驱动波形图；单独对感光晶体管T1进行驱动的驱动波形图；以及对发射电极Tx和感光晶体管T1进行分时驱动的驱动波形图。
单独对发射电极Tx进行驱动时，在一个驱动周期中，在第一时间段t1内，对发射电极Tx提供一个触控驱动信号Vt，在第二时间段t2内，提供一个第一低电平Vl1。单独对感光晶体管T1进行驱动时，在一个驱动周期中，在第三时间段t3内，对感光晶体管T1的第一栅极G1提供一个扫描驱动信号Vs，在第四时间段t4内，提供一个第二低电平Vl2。
对发射电极Tx和感光晶体管T1进行分时驱动时，一个驱动周期T依次包括第一时间段t1、第二时间段t2’、第三时间段t3和第四时间段t4’。在第一时间段t1内，对发射电极Tx提供一个触控驱动信号Vt。在第二时间段t2’内，对发射电极Tx提供一个第一低电平Vl1。该第一低电平可以是0V。在第三时间段t3内，对感光晶体管T1的第一栅极G1提供一个扫描驱动信号Vs，在第四时间段t4’内，对感光晶体管T1的第一栅极G1提供一个第二低电平Vl2。该第二低电平Vl2可以是0V。该驱动方法能够用于本申请的控制组件中，不限于感光电路210a的结构，例如1T，1T1C，2T1C电路等。
在本申请中，光控结构20a的工作原理为：当由用户操作外部发光元件对显示屏100进行控制时，外部发光元件射出的光线照射至光控结构20a使感光晶体管T1中的非晶硅产生载流子，而通过储存电容C收集，然后通过开关晶体管T2进行控制，经积分放大器IA处理被驱动结构20c的驱动IC检测到，从而确定光线照射位置。触控结构20b的工作原理为：当用户触碰显示屏10时，发射电极Tx与接收电极Rx之间的投射电容会发生改变，经积分放大器IA处理被驱动芯片检测到，根据检测到的电信号可以确定用户触碰的位置。光控结构20a中的信号输出线OL与触控结构20b中的接收电极Rx分时复用，当传感器接收到触控信号或者感光信号时，其产生的电荷变化皆可以通过信号输出线OL传输，通过积分放大器IA处理，从而可以准确的定位出触控的坐标位置或者感光的坐标位置。
在一种实施方式中，光控结构20a和触控结构20b的分辨率相同，也就是说，光控结构20a的最小单元和触控结构20b的最小单元一一对应。在另一种实施方式中，光控结构20a和触控结构20b的分辨率不相同，也就是说，光控结构20a和触控结构20b的最小单元并非一一对应。例如，光控结构20a的最小单元的数量大于触控结构20b的最小单元的数量，则仅一部分的感光电路210a的信号输出线OL复用为接收电极Rx，一部分的信号输出线OL不连接至触控结构20b。或者光控结构20a的最小单元的数量小于触控结构20b的最小单元的数量，则仅部分的接收电极Rx复用为感光电路210a的信号输出线OL，另一部分的接收电极Rx不连接至光控结构20a。
请参考图11，本实施方式的控制装置1与第一实施方式的控制装置1大致相同，不同点在于光控结构的感光电路210a的结构。本实施方式的感光电路210a仅包括一感光晶体管T1和一存储电容C。该感光晶体管T1同时作为开关晶体管使用。具体地，光控结构20a包括信号输入线IL和第一扫描线GL1，感光晶体管T1的第一栅极G1连接于第一扫描线GL1，感光晶体管T1的第一源极S1连接于信号输入线IL，感光晶体管T1的第一漏极D1连接于接收电极Rx。存储电容C的第一极板C1连接于感光晶体管T1的输出端，即第一漏极D1，第二极板C2连接于第一扫描线GL1。
此外，在本申请的另一实施方式中，还可以省略该存储电容C，感光电路210a仅由一个感光晶体管T1构成。
本申请采用on-glass结构，整合光控结构和触控结构，可将光控和触控功能同步集成在显示屏之中，以实现短程触控，远程光控的功能，弥补单一功能的触控或者光控的不足之处。特别有利于大尺寸显示屏同步实现光控和触控的功能。并且将光控传感器和触控传感器中的信号输出线和接收电极进行合并，分时复用，能够简化结构显示屏结构，降低成本。
此外，光控结构和触控结构采用同一个驱动结构进行驱动，有利于光控和触控的芯片集成，更便于将集成的控制组件和显示面板绑定一起，能够简化结构，节约制程。
以上对本申请实施方式提供了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种控制组件，其中，所述控制组件集成于显示屏中，包括衬底和并排设置于所述衬底上的光控结构和触控结构，所述光控结构包括信号输入线、信号输出线以及电连接于所述信号输入线和所述信号输出线之间的感光电路，所述触控结构包括多个接收电极和多个发射电极，所述接收电极复用为所述信号输出线。
  2. 如权利要求1所述的控制组件，其中，所述感光电路包括一感光晶体管，所述光控结构包括第一栅极、第一源极、第一漏极以及对应于所述第一栅极设置于所述第一源极和所述第一漏极之间的第一有源层，所述感光电路包括一第一扫描线，所述第一栅极连接于所述第一扫描线，所述第一源极连接于所述信号输入线。
  3. 如权利要求2所述的控制组件，其中，所述感光晶体管的第一漏极连接于所述信号输出线。
  4. 如权利要求2所述的控制组件，其中，所述感光电路还包括一开关晶体管，所述光控结果还包括第二扫描线，所述开关晶体管包括第二栅极、第二源极、第二漏极以及对应于所述第二栅极设置于所述第二源极和所述第二漏极之间第二有源层，所述第二栅极连接于所述第二扫描线，所述第二源极连接于所述第一漏极，所述第二漏极连接于所述信号输出线。
  5. 如权利要求4所述的控制组件，其中，所述发射电极与所述第二栅极同层设置，所述接收电极与第二漏极同层设置。
  6. 如权利要求4所述的控制组件，其中，所述第一有源层与所述第二有源层同层设置且材料相同，所述第一有源层与所述第二有源层的材料包括光敏半导体，所述开关晶体管还包括一遮光层，所述遮光层设置于所述第二有源层远离所述衬底一侧，并对应所述第二有源层设置。
  7. 如权利要求3所述的控制组件，其中，所述感光电路还包括一存储电容，所述存储电容的第一极板连接于所述第一漏极，第二极板连接于所述第一扫描线。
  8. 如权利要求4所述的控制组件，其中，所述感光电路还包括一存储电容，所述存储电容的第一极板连接于所述第一漏极与所述第二源极之间，第二极板连接于所述第一扫描线。
  9. 如权利要求6所述的控制组件，其中，所述光控结构包括设置于所述衬底上的所述第一电极层，设置于所述第一电极层上的半导体层，设置于所述半导体层上的第二电极层、以及设置于所述半导体层上的遮光层，所述发射电极与所述第一电极层、所述第二电极层和所述遮光层中的一个同层设置，所述接收电极与所述第一电极层、所述第二电极层和所述遮光层中的另一个同层设置。
  10. 如权利要求1所述的控制组件，其中，所述控制组件还包括一驱动结构，所述光控结构和所述触控结构电连接至所述驱动结构，所述用于驱动结构用于分时驱动所述光控结构和所述触控结构。
  11. 一种显示屏，其中，包括显示面板以及贴合与所述显示面板的显示侧的控制组件，所述控制组件为如权利要求1所述的控制组件。
  12. 如权利要求11所述的显示屏，其中，所述感光电路包括一感光晶体管，所述光控结构包括第一栅极、第一源极、第一漏极以及对应于所述第一栅极设置于所述第一源极和所述第一漏极之间的第一有源层，所述感光电路包括一第一扫描线，所述第一栅极连接于所述第一扫描线，所述第一源极连接于所述信号输入线。
  13. 如权利要求12所述的显示屏，其中，所述感光晶体管的第一漏极连接于所述信号输出线。
  14. 如权利要求12所述的显示屏，其中，所述感光电路还包括一开关晶体管，所述光控结果还包括第二扫描线，所述开关晶体管包括第二栅极、第二源极、第二漏极以及对应于所述第二栅极设置于所述第二源极和所述第二漏极之间第二有源层，所述第二栅极连接于所述第二扫描线，所述第二源极连接于所述第一漏极，所述第二漏极连接于所述信号输出线。
  15. 如权利要求14所述的显示屏，其中，所述发射电极与所述第二栅极同层设置，所述接收电极与第二漏极同层设置。
  16. 如权利要求14所述的显示屏，其中，所述第一有源层与所述第二有源层同层设置且材料相同，所述第一有源层与所述第二有源层的材料包括光敏半导体，所述开关晶体管还包括一遮光层，所述遮光层设置于所述第二有源层远离所述衬底一侧，并对应所述第二有源层设置。
  17. 如权利要求3所述的显示屏，其中，所述感光电路还包括一存储电容，所述存储电容的第一极板连接于所述第一漏极，第二极板连接于所述第一扫描线。
  18. 如权利要求14所述的显示屏，其中，所述感光电路还包括一存储电容，所述存储电容的第一极板连接于所述第一漏极与所述第二源极之间，第二极板连接于所述第一扫描线。
  19. 如权利要求6所述的显示屏，其中，所述光控结构包括设置于所述衬底上的所述第一电极层，设置于所述第一电极层上的半导体层，设置于所述半导体层上的第二电极层、以及设置于所述半导体层上的遮光层，所述发射电极与所述第一电极层、所述第二电极层和所述遮光层中的一个同层设置，所述接收电极与所述第一电极层、所述第二电极层和所述遮光层中的另一个同层设置。
  20. 一种控制装置，其中，包括如权利要求11所述的显示屏和发光组件，所述发光组件用于发射光线至所述显示屏，所述显示屏的控制组件用于检测所述发光组件发出的光线射入至所述显示屏的位置。
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