WO2022062589A1 - 图像传感器、成像模组和电子装置 - Google Patents

图像传感器、成像模组和电子装置 Download PDF

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Publication number
WO2022062589A1
WO2022062589A1 PCT/CN2021/106474 CN2021106474W WO2022062589A1 WO 2022062589 A1 WO2022062589 A1 WO 2022062589A1 CN 2021106474 W CN2021106474 W CN 2021106474W WO 2022062589 A1 WO2022062589 A1 WO 2022062589A1
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Prior art keywords
nano
brick
bricks
image sensor
pixels
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PCT/CN2021/106474
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English (en)
French (fr)
Inventor
吴伟标
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Oppo广东移动通信有限公司
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Publication of WO2022062589A1 publication Critical patent/WO2022062589A1/zh

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof

Definitions

  • the present application relates to the field of electronic equipment, and in particular, to an image sensor, an imaging module and an electronic device.
  • Embodiments of the present application disclose an image sensor, an imaging module, and an electronic device.
  • the image sensor of the embodiment of the present application includes a photosensitive layer and a plurality of nano-brick units disposed above the photosensitive layer, the nano-brick unit includes a plurality of nano-bricks, a plurality of the nano-bricks are arranged at intervals, and a plurality of the nano-bricks are arranged at intervals.
  • the nanobricks have subwavelength dimensions, and a plurality of the nanobricks are configured to enable incident light beams impinging on the nanobrick units to be converged for reception by the photosensitive layer.
  • the imaging module of the embodiment of the present application includes the image sensor described in the above embodiment.
  • the electronic device includes the imaging module described in the foregoing embodiment.
  • FIG. 1 is a schematic plan view of an image sensor according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a three-dimensional disassembly of a nano-brick unit and a corresponding pixel according to an embodiment of the present application;
  • FIG. 3 is an enlarged schematic view of a nanobrick of an embodiment of the present application.
  • FIG. 4 is a schematic diagram of the convergence of a plurality of nano-brick units to an incident light beam according to an embodiment of the present application
  • FIG. 5 is a schematic plan view of an electronic device according to an embodiment of the present application.
  • Image sensor 100 photosensitive layer 10, pixel 11, R pixel 111, G pixel 112, B pixel 113, nano-brick unit 20, nano-brick 21, base layer 30, base unit 31, filter layer 40, imaging module 200, Electronic device 1000.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be mechanical connection, electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction of two elements relation.
  • installed should be understood in a broad sense, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be mechanical connection, electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction of two elements relation.
  • a first feature "on” or “under” a second feature may include direct contact between the first and second features, or may include the first and second features Not directly but through additional features between them.
  • the first feature being “above”, “over” and “above” the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature.
  • the first feature is “below”, “below” and “below” the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.
  • an embodiment of the present application provides an image sensor 100 .
  • the image sensor 100 includes a photosensitive layer 10 and a plurality of nano-brick units 20 disposed above the photosensitive layer 10 .
  • the nano-brick unit 20 includes a plurality of nano-bricks 21, the plurality of nano-bricks 21 are arranged at intervals, the nano-bricks 21 have sub-wavelength dimensions, and the plurality of nano-bricks 21 are configured so that incident light beams irradiated on the nano-brick unit 20 can be focused to be received by the photosensitive layer 10 .
  • microlens units in the microlens array are usually convex lenses, so in the microlens array, there will be a certain gap at the connection between the convex lens and the convex lens, and the light incident on these gaps cannot be converged to another part of the microlens array. one end, thereby reducing the light flux received by the photosensitive layer.
  • the microlens units are of micron-scale size, so the gaps between the microlens units are also of micron-scale size.
  • the pixels of the photosensitive layer disposed under the microlens are also micron-sized, so the gap between the microlens units will greatly reduce the light flux received by the pixels on the photosensitive layer, and make the pixels on the photosensitive layer The light cannot be received uniformly, thereby reducing the image quality of the image sensor.
  • a plurality of nano-bricks 21 of sub-wavelength size are arranged at intervals, and the sub-wavelength nano-bricks 21 can perform phase adjustment on the incident light beam irradiated on the nano-bricks 21, so as to be able to
  • the incident light beam irradiated on the nano-brick unit 20 converges on the photosensitive layer 10, so that the incident light beam is received by the photosensitive layer 10, thereby increasing the luminous flux received by the photosensitive layer 10, so as to improve the photoelectric conversion efficiency of the photosensitive layer 10, so as to effectively improve the image sensor. 100 image quality.
  • the working wavelength of the nano-bricks 21 of sub-wavelength size is the wavelength of visible light, that is, the wavelength of nano-level
  • the size of the nano-bricks 21 is nano-level.
  • the nano-brick unit 20, and the plurality of nano-brick units 20 are arranged above the photosensitive layer 10, the light irradiated on the nano-brick unit 20 can be improved by controlling the gap between each nano-brick 21 and the nano-brick unit 20
  • the luminous flux that is condensed and received by the photosensitive layer 10 ultimately improves the imaging quality of the image sensor 100 .
  • the nano-bricks 21 are of sub-wavelength size, that is, the characteristic size of the structure of the nano-bricks 21 is equal to or smaller than the operating wavelength of the nano-bricks 21 .
  • the working wavelength of the nano-bricks 21 is the wavelength of visible light, that is to say, the characteristic size of the structure of the nano-bricks 21 is smaller than or equal to the wavelength of the corresponding visible light.
  • the characteristic size of the structure of the nano-brick 21 is less than or equal to 700 nm.
  • nanobricks 21 are amorphous silicon nanobricks.
  • the amorphous silicon nanobricks have relatively active chemical properties, which facilitates the processing of the nanobricks 21 .
  • the image sensor 100 further includes a base layer 30 , the base layer 30 is located between the photosensitive layer 10 and the nano-brick units 20 , and a plurality of nano-brick units 20 are disposed on the base layer 30 .
  • the base layer 30 can play a role of supporting the nano-brick units 20 to fix the relative positions of the nano-brick units 20 , thereby improving the structural stability of the nano-brick units 20 .
  • the base layer 30 is made of quartz glass.
  • the quartz glass has good light transmittance, and can transmit the incident light beam condensed by the nano-brick unit 20 well, so as to ensure the light flux received by the photosensitive layer 10 for the condensed incident light beam.
  • the incident light beam in the gap can also be transmitted to the photosensitive layer 10 by the base layer 30 , which further improves the light flux received by the photosensitive layer 10 , thereby improving the imaging quality of the image sensor 100 .
  • the base layer 30 can also be made of other materials with high light transmittance, which can be determined according to the actual situation, which is not limited here.
  • the plurality of nano-brick units 20 may also be directly disposed above the photosensitive layer 10 , without first being disposed on the base layer 30 and then disposed above the photosensitive layer 10 . In this way, the structure of the image sensor 100 can be made more compact, the weight of the image sensor 100 can be reduced, the light-weight requirements of electronic products can be met, and the production cost can also be reduced.
  • the base layer 30 includes a plurality of base units 31 , each base unit 31 is provided with a corresponding nano-brick 21 , and the geometric center G of the nano-brick 21 is the same as the geometric center of the base unit 31 . F coincides.
  • the geometric center G of the nano-brick 21 and the geometric center F of the base unit 31 are coincident, so that the nano-brick 21 is always located in the center of the base unit 31. Therefore, the geometry of each nano-brick 21 can be set by setting the size of the base unit 31. The distance between the center and the geometric center G of the adjacent nanobricks 21 .
  • FIG. 3 is an enlarged schematic diagram of a single nano-brick 21 and its corresponding base unit 31 .
  • the base unit 31 may have a rectangular parallelepiped structure.
  • the bottom surface of the base unit 31 may be As a square, the side length of the bottom surface of the base unit 31 is C, it can be known that the distance between the geometric centers F of two adjacent base units 31 is C.
  • the base unit 31 may also be other structures, such as triangular prisms, quadrangular prisms, etc., which are not specifically limited herein.
  • the plurality of nano-brick units 20 are arranged in a rectangular array, and the geometric centers G of the plurality of nano-bricks 21 of each nano-brick unit 20 are arranged in a rectangular array.
  • the geometric centers G of the plurality of nano-bricks 21 are arranged in a rectangular array, and the nano-bricks 21 are sub-wavelength.
  • the converging effect of the nano-brick unit 20 on the incident light beam increases the light flux received by the photosensitive layer 10 , and finally improves the imaging quality of the image sensor 100 .
  • the distance p between the geometric center G of each nano-brick 21 and the geometric center G of the adjacent nano-brick 21 is equal, that is, in the same nano-brick In the unit 20, the geometric centers G of the plurality of nano-bricks 21 are arranged in a rectangular array with a lateral spacing distance equal to the longitudinal spacing distance.
  • the geometric centers G of the plurality of nano-brick units 20 and the plurality of nano-bricks 21 may also be arranged in other array manners, for example, a circular array.
  • the distance p between the geometric centers G of two adjacent nano-bricks 21 of each nano-brick unit 20 is 580 nm to 700 nm.
  • the density of the array arrangement of the nano-bricks 21 on each nano-brick unit 20 can be adjusted to flexibly adjust the nano-brick unit.
  • Convergence effect of incident light beams so that the array arrangement of nano-bricks 21 on the nano-brick unit 20 can correspond to light of different wavelengths and have better convergence effect, thereby increasing the luminous flux received by each pixel 11, and finally improving the image sensor. 100 image quality.
  • the geometric center G of the nano-brick 21 and the geometric center F of the base unit 31 corresponding to the nano-brick 21 are coincident
  • the geometric center G of the adjacent two nano-bricks 21 of each nano-brick unit 20 is The distance p between them is equal to the distance C between the geometric centers F of two adjacent base units 31 , that is, the distance p between the geometric centers G of the adjacent two nanobricks 21 of each nanobrick unit 20 is equal to C.
  • the photosensitive layer 10 includes a plurality of pixels 11 arranged in an array, each pixel 11 is provided with at least one nano-brick unit 20 , and the nano-brick unit 20 covers the pixel 11 .
  • a nano-brick unit 20 capable of covering the pixel 11 is arranged above the pixel 11, so that the nano-brick unit 20 can converge the incident light beam irradiated on the pixel 11 and be received by the pixel 11, so as to improve the amount of light received by each pixel 11. Therefore, the luminous flux received by the photosensitive layer 10 is increased, thereby improving the imaging quality of the image sensor 100 .
  • the photosensitive layer 10 of the embodiment of the present application may include, but is not limited to, a photodiode array.
  • the light-sensing side of each photodiode in the photodiode array is used to receive light converged by the nanobrick unit 20 .
  • the nano-brick unit 20 includes a plurality of nano-bricks 21 , and the plurality of nano-bricks 21 are arranged in an array.
  • the nano-brick 21 includes a bottom surface
  • the bottom surface includes a first side a and a second side b that are perpendicular to each other
  • the photosensitive layer 10 includes a first axis d and a second axis that are perpendicular to each other.
  • both the first axis d and the second axis e are perpendicular to the optical axis I of the image sensor 100, which passes through the geometric center of the image sensor 100 and is perpendicular to the plane where the image sensor 100 is located.
  • the angle between the first side a and the first axis d is 3, the photosensitive layer 10 in FIG.
  • the photosensitive layer 10 corresponding to a single nano-brick 21, the first axis d and the second axis e are when the image sensor 100 is placed horizontally, the photosensitive layer 10 is on the horizontal plane.
  • the x-axis and y-axis of the xoy coordinate system established by the origin is the geometric center of , and the x-axis and y-axis are perpendicular to the optical axis I of the image sensor 100, that is, the optical axis I corresponds to the z-axis of the spatial coordinate system.
  • corner is the angle between the first side a and the first axis (x-axis) d.
  • the first axis d is parallel to the length direction of the bottom surface of the photosensitive layer 10
  • the second axis e is parallel to the width direction of the bottom surface of the photosensitive layer 10 .
  • the coordinate systems of the first axis and the second axis can be set according to the specific structure, which is not limited here.
  • the photosensitive layer 10 of the illustrated embodiment has a rectangular parallelepiped structure, and the corners of each nanobrick 21 are Satisfy the following relation:
  • r is the distance between the geometric center G of the nano-brick 21 and the geometric center of the pixel 11 corresponding to the nano-brick 21
  • f' is the focal length of the nano-brick unit 20
  • ⁇ is the wavelength of the incident light beam. It should be pointed out that when the photosensitive layer 10 and the nano-brick unit 20 are placed horizontally, the distance between the vertical line passing through the geometric center G of the nano-brick 21 and the vertical line passing through the geometric center of the pixel 11 is nanometers. The distance between the geometric center G of the brick 21 and the geometric center of the pixel 11 corresponding to the nano-brick 21 is the distance between two parallel vertical lines.
  • the specific value of the focal length f′ of the nano-brick unit 20 can be specifically set according to the separation distance between the nano-brick unit 20 and the photosensitive layer 10 .
  • each nanobrick 21 The determination can be made according to the above, so that the nano-brick unit 20 including the plurality of nano-bricks 21 can condense the incident light beam so that the incident light beam is received by the photosensitive layer 10 .
  • the metasurface material is a material whose thickness is smaller than the working wavelength.
  • the nano-bricks 21 are of sub-wavelength size, that is to say, the nano-bricks 21 of the embodiment of the present application are metasurfaces material, the nano-brick 21 of the metasurface material in the embodiment of the present application can be equivalent to a high-efficiency half-wave plate, which can make the incident beam pass through the half-wave plate to generate a fixed phase delay, and has high light transmittance . Therefore, after a reasonable turn of the nano-bricks 21 one by one By making the arrangement, the incident light beam can be collected on each pixel 11 without loss.
  • the phase of the incident light beam is adjusted by adjusting each nano-brick unit 21 , so as to realize the function of converging the incident light beam irradiated on one nano-brick unit 20 .
  • the adjustment principle of the nano-brick 21 to the incident beam is:
  • the Jones matrix of the half-wave plate (nano-brick 21) can be expressed as:
  • the Jones vector of the light beam incident on the nano-brick 21 can be expressed as: Therefore, the Jones vector of the light beam after passing through this nano-brick 21 can be expressed as:
  • the nano-brick unit 20 on each pixel 11 needs to irradiate the incident light beam onto the photosensitive layer 10 . Therefore, according to the above-mentioned phase adjustment principle of the nano-brick 21 and the focusing principle that the nano-brick unit 20 is equivalent to a lens, combined with formula (1), for different nano-bricks 21 of the nano-brick unit 20 above the same pixel 11 , the phase difference of the incident beam adjusted by each nano-brick 21 is In this way, by setting the corners of each nanobrick 21 In order to adjust the phase of the incident light beam at the position corresponding to each nano-brick 21 , the focused phase adjustment function of the nano-brick unit 20 is realized.
  • each nano-brick 21 in the nano-brick unit 20 So that the nano-brick 21 has the effect of adjusting the phase of the incident light beam, so that the nano-brick unit 20 has the effect of converging light, so that the array composed of a plurality of nano-brick units 20 can replace the traditional micro-lens array composed of convex lenses, thereby While ensuring that the plurality of nano-brick units 20 have the function of condensing light, the plurality of nano-brick units 20 arranged in a rectangular array above the photosensitive layer 10 can also increase the total amount of concentrated light, thereby improving the photosensitive layer.
  • the luminous flux received by the image sensor 10 can improve the imaging quality of the image sensor 100 .
  • the plurality of pixels 11 include a plurality of R pixels 111 , a plurality of G pixels 112 and a plurality of B pixels 113 , and the nano-bricks 21 have a rectangular parallelepiped structure; wherein, the length of the nano-bricks 21 disposed above the R pixels 111 is 400nm to 490nm, 180nm to 260nm in width, and 700nm to 780nm in height; the nano-brick 21 arranged above the G pixel 112 has a length of 390nm to 460nm, a width of 160nm to 240nm, and a height of 460nm to 520nm; arranged on the B pixel
  • the nanobricks 21 above 113 have a length of 380 nm to 450 nm, a width of 210 nm to 290 nm, and a height of 580 nm to 630 nm.
  • the nano-bricks 21 can have different sizes, so as to improve the converging effect of the nano-brick unit 20 on the incident light beam irradiating the nano-brick unit 20 , thereby increasing the luminous flux of the incident light beam received by the photosensitive layer 10 , improving the The photoelectric conversion efficiency of the photosensitive layer 10 further improves the imaging quality of the image sensor 100 .
  • the R pixel 111 represents the pixel 11 for receiving the red light condensed via the nano-brick unit 20
  • the G pixel 112 represents the pixel 11 for receiving the green light condensed via the nano-brick unit 20
  • the B pixel 113 represents the For the pixel 11 receiving the blue light condensed through the nano-brick unit 20 .
  • FIG. 4 in conjunction with FIG. 4 , which shows the converging effect of the plurality of nano-brick units 20 on the incident light beam, wherein the dashed arrows above the plurality of nano-brick units 20 represent the incident light beam, which originates from the plurality of nano-brick units 20
  • the dashed line extending below the unit 20 and converging represents the incident beam after being condensed.
  • the incident beam is irradiated on one side of the plurality of nano-brick units 20, and each nano-brick unit 20 converges the incident beam irradiated on the nano-brick unit 20 to the other side of the nano-brick unit 20, so that the The photosensitive layer 10 on the other side can receive the condensed incident light beam, so as to increase the light flux received by the photosensitive layer 10 , thereby improving the imaging quality of the image sensor 100 .
  • the nano-brick unit 20 described in the above-mentioned embodiment can be arranged in the image sensor 100 of the RGGB Bayer array. It is required that the wavelength band that can be selected for red light is 600nm to 780nm, the wavelength band that can be selected for green light is 480nm to 600nm, and the wavelength band that can be selected for blue light is 400nm to 480nm. In the embodiment of the present application, red light with a dominant wavelength of 630 nm, green light with a dominant wavelength of 530 nm, and blue light with a dominant wavelength of 450 nm are selected, and the electromagnetic simulation software Comsol is used to design and simulate the structural parameters of the nano-brick 21.
  • the structural parameters of 21 include the length, width, height and corners of nano-bricks 21
  • the circularly polarized light is vertically incident on the nano-brick unit 20, and the conversion efficiency of the transmitted light beam and the corresponding optical wavelength bandwidth are used as optimization objects to obtain the side length dimension C of the square base unit 31 and the length of the nano-brick 21.
  • the optimal size for parameters such as L, width W and height H.
  • the brick unit 20 , the nano-brick unit 20 is used for condensing red light with a dominant wavelength of 630 nm, that is, the light beam condensed by the nano-brick unit 20 is used for being received by the R pixel 111 .
  • the corners of the nano-bricks 21 are correspondingly set according to the position of each nano-brick 21
  • the nanobrick units 20 are fabricated using a microelectronic lithography process.
  • the traditional manufacturing and processing methods of the convex lens microlens array usually include a melting photoresist method, a reactive ion beam etching technology, a femtosecond laser processing method, and the like.
  • the process flow of the molten photoresist method is ultraviolet exposure, development and cleaning, and hot melt molding. It is characterized by simple process and stable process parameters.
  • the optical performance of the microlenses prepared by this technology is not good, and it is not suitable for use as a microlens structure. s material.
  • the reactive ion beam etching method is based on the combination of ion bombardment sputtering and chemical reaction.
  • the femtosecond laser processing method uses a laser to etch the pit lattice formed on the quartz glass. In a short etching time, the edge gradually diffuses outward, and the microlens array structure is gradually formed.
  • the nano-brick unit 20 of the embodiment of the present application is made by the microelectronic lithography process.
  • the microelectronic lithography process has a higher yield rate of finished products, and also has a faster processing speed, which can realize mass production, and also It can reduce the processing cost and has a huge cost advantage.
  • the image sensor 100 further includes a filter layer 40 , the filter layer 40 is disposed between the photosensitive layer 10 and the nano-brick unit 20 or is disposed above the nano-brick unit 20 , and the filter layer 40 40 is used to filter the light entering the photosensitive layer 10 .
  • the filter layer 40 can filter the light that is about to enter the photosensitive layer 10 .
  • it can reduce the interference of infrared light, ultraviolet light and other invisible light on the imaging of the image sensor 100 , and on the other hand, it can also receive light at each pixel 11 .
  • the other light except the target wavelength light received by each pixel 11 is reduced, and the imaging quality of the image sensor 100 is finally improved.
  • the filter layer 40 may include a plurality of filters, and a corresponding filter may be arranged above each pixel 11.
  • a filter that only allows red light with a wavelength of 600nm to 780nm to pass through is arranged above the R pixel 111.
  • a filter that allows only green light with a wavelength of 480nm to 600nm to pass is set above the G pixel 112
  • a filter that only allows blue light with a wavelength of 400nm to 480nm to pass is set above the B pixel 113 .
  • the length, width, and high structural parameters of the nano-bricks 21 can also be set, so that the nano-bricks 21 have narrow-band response characteristics to the incident light beam, that is, the nano-bricks 21 with different structural parameters are allowed to transmit light of different wavelengths .
  • the nanobrick 21 has a length of 400nm to 490nm, a width of 180nm to 260nm, and a height of 700nm to 780nm.
  • the nanobricks 21 For the nanobricks 21 allowing green light in the wavelength range of 480nm to 600nm to pass through, the nanobricks 21 have a length of 390nm to 460nm, a width of 160nm to 240nm, and a height of 460nm to 520nm.
  • the nanobricks 21 that allow blue light in the wavelength range of 400nm to 480nm to pass through the nanobricks 21 have a length of 380nm to 450nm, a width of 210nm to 290nm, and a height of 580nm to 630nm.
  • the nano-brick units 20 can have narrow-band response characteristics, so that the nano-brick units 20 can not only have the function of converging the incident light beam, but also have the function of filtering light, so that the image sensor 100 can
  • the filter layer 40 need not be provided. In this way, the structure of the image sensor 100 can be simplified, so that the structure of the image sensor 100 is more compact and the weight is lower, and the production cost of the image sensor 100 can also be reduced.
  • the imaging module 200 of the embodiment of the present application includes the image sensor 100 of any of the above embodiments.
  • a plurality of nano-bricks 21 of sub-wavelength size are arranged at intervals, and the sub-wavelength nano-bricks 21 can adjust the phase of the incident light beam irradiated on the nano-brick 21, so as to be able to irradiate the nano-brick unit.
  • the incident light beam at 20 converges on the photosensitive layer 10 so that the incident light beam is received by the photosensitive layer 10 , thereby increasing the luminous flux received by the photosensitive layer 10 , thereby improving the photoelectric conversion efficiency of the photosensitive layer 10 , and effectively improving the imaging quality of the image sensor 100 .
  • the electronic device 1000 of the embodiment of the present application includes the imaging module 200 of any one of the above embodiments.
  • a plurality of nano-bricks 21 of sub-wavelength size are arranged at intervals, and the sub-wavelength nano-bricks 21 can adjust the phase of the incident light beam irradiated on the nano-bricks 21, so that the nano-bricks 21 can be irradiated on the nano-brick unit 20.
  • the upper incident light beam converges on the photosensitive layer 10 so that the incident light beam is received by the photosensitive layer 10 , thereby increasing the luminous flux received by the photosensitive layer 10 , thereby improving the photoelectric conversion efficiency of the photosensitive layer 10 , and effectively improving the imaging quality of the image sensor 100 .
  • the electronic device 1000 may include an electronic device 1000 having a photographing function, such as a digital camera, a mobile phone, a notebook computer, and a tablet computer.
  • a photographing function such as a digital camera, a mobile phone, a notebook computer, and a tablet computer.

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Abstract

一种图像传感器(100)、成像模组(200)和电子装置(1000)。图像传感器(100)包括感光层(10)和设置在感光层(10)上方的多个纳米砖单元(20)。纳米砖单元(20)包括多个纳米砖(21)，多个纳米砖(21)间隔排布，纳米砖(21)具有亚波长尺寸，多个纳米砖(21)被配置为使照射在纳米砖单元(20)上的入射光束能够被会聚以被感光层(10)接收。

Description

图像传感器、成像模组和电子装置
优先权信息
本申请请求2020年09月25日向中国国家知识产权局提交的、专利申请号为202011024446.X的专利申请的优先权和权益，并且通过参照将其全文并入此处。
技术领域
本申请涉及电子设备领域，尤其涉及一种图像传感器、成像模组和电子装置。
背景技术
在相关技术中，为了提高成像质量，照射在图像传感器上的光线需要通过会聚后再被图像传感器的感光层接收，因此，如何提高光线的会聚效率以达到更好的成像效果成为了技术人员研究的技术问题。
发明内容
本申请实施方式公开了一种图像传感器、成像模组和电子装置。
本申请实施方式的图像传感器包括感光层和设置在所述感光层上方的多个纳米砖单元，所述纳米砖单元包括多个纳米砖，多个所述纳米砖间隔排布，多个所述纳米砖具有亚波长尺寸，多个所述纳米砖被配置为使照射在所述纳米砖单元上的入射光束能够被会聚以被所述感光层接收。
本申请实施方式的成像模组包括上述实施方式所述的图像传感器。
本申请实施方式的电子装置包括上述实施方式所述的成像模组。
本申请的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请的上述和/或附加的方面和优点从结合下面附图对实施方式的描述中将变得明显和容易理解，其中：
图1是本申请实施方式的图像传感器的平面示意图；
图2是本申请实施方式的纳米砖单元和对应的像素的立体拆解示意图；
图3是本申请实施方式的纳米砖的放大示意图；
图4是本申请实施方式的多个纳米砖单元对入射光束的会聚示意图；
图5是本申请实施方式的电子装置的平面示意图。
主要元件符号说明：
图像传感器100、感光层10、像素11、R像素111、G像素112、B像素113、纳米砖单元20、纳米砖21、基底层30、基底单元31、滤光层40、成像模组200、电子装置1000。
具体实施方式
下面详细描述本申请的实施方式，所述实施方式的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施方式是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
请参阅图1至3，本申请实施方式提供一种图像传感器100。图像传感器100包括感光层10和设置在感光层10上方的多个纳米砖单元20。纳米砖单元20包括多个纳米砖21，多个纳米砖21间隔排布，纳米砖21具有亚波长尺寸，多个纳米砖21被配置为使照射在纳米砖单元20上的入射光束能够被会聚以被感光层10接收。
在相关技术中，图像传感器厂商会在感光层上方设置微透镜阵列，以通过微透镜阵列会聚光线以使感光层接收更多光线，从而提升图像传感器的成像效果。但是微透镜阵列中的微透镜单元通常为凸透镜，因此在微透镜阵列中，凸透镜与凸透镜之间的连接处会存在一定的间隙，入射在这些间隙上的光线无法被会聚到微透镜阵列的另一端，从而减少了感光层接收的光通量。并且，通常地，微透镜单元为微米级尺寸，因此微透镜单元之间的间隙也为微米级尺寸。但是在相关技术中，设在微透镜下方的感光层的像素也为微米级尺寸，因此微透镜单元之间的间隙会大幅度减少感光层上的像素接收的光通 量，且使得感光层上的像素无法均匀地接收光线，从而降低了图像传感器的成像质量。
在上述本申请实施方式的图像传感器100中，间隔排布的多个亚波长尺寸的纳米砖21，亚波长的纳米砖21可以对照射在纳米砖21上的入射光束进行相位调节，从而能够将照射在纳米砖单元20上入射光束会聚到感光层10上，以使入射光束被感光层10接收，从而提升感光层10接收的光通量，以提升感光层10的光电转换效率，以有效提升图像传感器100的成像质量。并且，亚波长尺寸的纳米砖21，由于其工作波长为可见光的波长，即纳米级别的波长，因此纳米砖21的尺寸为纳米级别，多个纳米砖21间隔排布能够构成具有会聚光线的作用的纳米砖单元20，并且多个纳米砖单元20设置在感光层10的上方，可以通过控制每个纳米砖21以及纳米砖单元20之间的间隙，从而提升照射在纳米砖单元20上的光线被会聚并被感光层10接收的光通量，以最终提升图像传感器100的成像质量。
具体地，纳米砖21为亚波长尺寸，即是说，纳米砖21的结构的特征尺寸与纳米砖21的工作波长相当或者更小。在本申请实施方式中，纳米砖21的工作波长为可见光的波长，也即是说，纳米砖21的结构的特征尺寸小于或者等于其对应的可见光的波长，例如，当纳米砖21用于会聚波长为700nm的红光时，纳米砖21的结构的特征尺寸小于或者等于700nm。
在某些实施方式中，纳米砖21为非晶硅纳米砖。如此，非晶硅纳米砖具有较为活泼的化学性能，方便纳米砖21的加工。
请参阅图1，在某些实施方式中，图像传感器100还包括基底层30，基底层30位于感光层10和纳米砖单元20之间，多个纳米砖单元20设置在基底层30上。
如此，基底层30可以起到承载纳米砖单元20的作用，以固定纳米砖单元20的相对位置，从而提升纳米砖单元20的结构稳定性。
在某些实施方式中，基底层30由石英玻璃制成。如此，石英玻璃具有良好的透光率，能够良好地透射经由纳米砖单元20会聚的入射光束，以保证被会聚后的入射光束被感光层10接收的光通量，另外，照射在纳米砖21之间间隙的入射光束，也能被基底层30透射至感光层10上，进一步提升感光层10接收的光通量，从而提升图像传感器100的成像质量。
当然，基底层30还可以由其它具有高透光率的材料制成，可以根据实际情况确定，在此不多作限定。
在其它实施方式中，多个纳米砖单元20也可以直接设置在感光层10上方，无需先设置在基底层30再设置于感光层10上方。如此，可以使得图像传感器100的结构更加紧凑，减少图像传感器100的重量，满足电子产品的轻量化要求，同时还能够降低生产成本。
请参阅图3，在某些实施方式中，基底层30包括多个基底单元31，每个基底单元31上对应设置有一个纳米砖21，纳米砖21的几何中心G与基底单元31的几何中心F重合。
如此，纳米砖21的几何中心G和基底单元31的几何中心F重合，使得纳米砖21始终位于基底单元31的中心位置，因此，可以通过设置基底单元31的尺寸以设置每个纳米砖21几何中心和相邻纳米砖21的几何中心G之间的距离。
可以理解，在基底层30水平放置的情况下，纳米砖21的几何中心G和基底单元31的几何中心F重合，指的是纳米砖21的几何中心G和基底单元31的几何中心F位于同一铅垂线上。
具体地，请继续参阅图3，图3为单个纳米砖21与其对应的基底单元31的放大示意图，在本申请实施方式中，基底单元31可以为长方体结构，进一步地，基底单元31的底面可以为正方形，基底单元31的底面的边长为C，由此可知，两个相邻的基底单元31的几何中心F之间的距离为C。当然，在其它实施方式中，基底单元31还可以为其它结构，如三棱柱、四棱柱等，具体在此不作限制。
请参阅图1和图2，在某些实施方式中，多个纳米砖单元20呈矩形阵列排布，每个纳米砖单元20的多个纳米砖21的几何中心G呈矩形阵列排布。
如此，多个纳米砖21的几何中心G呈矩形阵列排布，纳米砖21为亚波长尺寸，多个纳米砖单元20在排布时，纳米砖21之间的间隔距离为纳米级别，可以提升纳米砖单元20对入射光束的会聚效果，提升感光层10接收的光通量，最终提升图像传感器100的成像质量。
具体地，在本申请实施方式中，在同一纳米砖单元20中，每个纳米砖21的几何中心G和相邻纳米砖21的几何中心G之间的距离p相等，即在同一个纳米砖单元20中，多个纳米砖21的几何中心G呈矩形阵列排布的横向间隔距离等于纵向间隔距离。当然，在其它实施方式中，多个纳米砖单元20以及多个纳米砖21的几何中心G还可以呈其它阵列方式排布，例如，圆周阵列。
请参阅图2，在某些实施方式中，每个纳米砖单元20的相邻两个纳米砖21的几何中心G之间的距离p为580nm至700nm。
如此，可以通过调节纳米砖单元20内相邻纳米砖21的几何中心G之间的距离，从而调节每个纳米砖单元20上纳米砖21阵列排布的疏密程度，以灵活调节纳米砖单元20对入射光束的会聚效果，以使纳米砖单元20上纳米砖21的阵列排布能够对应不同波长的光线具有更好的会聚效果，从而提升每个像素11接收的光通量，以最终提升图像传感器100的成像质量。
更多地，在纳米砖21的几何中心G和与纳米砖21对应设置的基底单元31的几何中心F重合的情况下，每个纳米砖单元20的相邻两个纳米砖21的几何中心G之间的距离p等于两个相邻的基底单元31的几何中心F的距离C，即，每个纳米砖单元20的相邻两个纳米砖21的几何中心G之间的距离p等于C。
请参阅图有1，在某些实施方式中，感光层10包括阵列排布的多个像素11，每个像素11至少对应设置一个纳米砖单元20，纳米砖单元20覆盖像素11。
如此，在像素11上方设置能够覆盖像素11的纳米砖单元20，以使纳米砖单元20 能够将照射在像素11上方的入射光束会聚，并被像素11接收，以提升每个像素11所接收的光通量，从而提升感光层10接收的光通量，进而提升图像传感器100的成像质量。
具体地，本申请实施方式的感光层10可以包括但不限于光电二极管阵列。光电二极管阵列中的每个光电二极管的感光侧用于接收纳米砖单元20会聚的光线。
请参阅图2，在一个像素11上方只覆盖有一个纳米砖单元20的情况下，纳米砖单元20内包括多个纳米砖21，多个纳米砖21阵列排布。
请参阅图1-3，在某些实施方式中，纳米砖21包括底面，底面包括相互垂直的第一边a和第二边b，感光层10包括相互垂直的第一轴线d和第二轴线e，第一轴线d和第二轴线e均与图像传感器100的光轴I垂直，图像传感器100的光轴I穿过图像传感器100的几何中心且垂直于图像传感器100所在的平面。第一边a与第一轴线d的夹角为
Figure PCTCN2021106474-appb-000001
其中，请继续参阅图3，图3中感光层10为对应单个纳米砖21的感光层10，第一轴线d和第二轴线e为在图像传感器100水平放置时，在水平面上以感光层10的几何中心为原点所建立的xoy坐标系的x轴和y轴，x轴和y轴垂直于图像传感器100的光轴I，也即光轴I对应的是空间坐标系的z轴。转角
Figure PCTCN2021106474-appb-000002
为第一边a和第一轴线(x轴)d的夹角。需要指出的是，在感光层10为长方体结构时，第一轴线d平行于感光层10的底面的长度方向，第二轴线e平行于感光层10的底面的宽度方向。在感光层10为其它结构时，可以根据具体结构设置第一轴线和第二轴线的坐标系，在此不多作限定。
本图示的实施方式的感光层10为长方体结构，每个纳米砖21的转角
Figure PCTCN2021106474-appb-000003
满足以下关系式：
Figure PCTCN2021106474-appb-000004
其中，r为纳米砖21的几何中心G和与纳米砖21相对应的像素11的几何中心之间的距离，f′为纳米砖单元20的焦距，λ为入射光束的波长。需要指出的是，在感光层10与纳米砖单元20水平放置的情况下，经过纳米砖21的几何中心G的铅垂线与经过像素11的几何中心的铅垂线之间的距离，为纳米砖21的几何中心G和与纳米砖21相对应的像素11的几何中心之间的距离，即为两平行铅垂线之间的距离。纳米砖单元20的焦距f′的具体数值可以根据纳米砖单元20与感光层10之间的间隔距离具体设定。入射光束的波长λ指每个纳米砖单元20所要会聚的光线的波长，例如，纳米砖单元20用于会聚波长为650nm的红光，则λ＝650nm。
如此，每个纳米砖21的转角
Figure PCTCN2021106474-appb-000005
可以根据上述进行确定，从而使得包括多个纳米砖21的纳米砖单元20能够将入射光束会聚，以使入射光束被感光层10接收。
具体地，超表面材料是一种厚度小于工作波长的材料，在本申请实施方式的图像传感器100中，纳米砖21为亚波长尺寸，即是说，本申请实施方式的纳米砖21为超表面材料，本申请实施方式的超表面材料的纳米砖21可以等效为一个高效的半波片，这种半波片能够使入射光束经过半波片后产生固定的相位延迟，且透光率高。因此，经过对 逐个纳米砖21以合理的转角
Figure PCTCN2021106474-appb-000006
进行排布设置，就能够将入射光束无损失地汇集到每个像素11上。
本申请实施方式的纳米砖单元20是通过调节每个纳米砖21对入射光束的相位进行调节，以实现将照射在一个纳米砖单元20上的入射光束会聚的作用。
纳米砖21对入射光束的调节原理为：对于晶体光学，半波片(纳米砖21)的琼斯矩阵可以表示为：
Figure PCTCN2021106474-appb-000007
其中，
Figure PCTCN2021106474-appb-000008
为纳米砖21的第一边a与感光层10的第一轴线d的夹角，入射在这种纳米砖21上的光束的琼斯矢量可表示为：
Figure PCTCN2021106474-appb-000009
因此透过这种纳米砖21之后的光束的琼斯矢量可以表示为：
Figure PCTCN2021106474-appb-000010
由式(3)可知，穿过纳米砖21的透射光与入射光的旋向相反，同时将经历
Figure PCTCN2021106474-appb-000011
的相位延迟。因此，通过调整在纳米砖单元20上每个纳米砖21的转角
Figure PCTCN2021106474-appb-000012
的大小(即调整第一边a与第一轴线d的夹角
Figure PCTCN2021106474-appb-000013
的大小)，就可以调节和控制出射光的相位，使每个像素11上通过纳米砖单元20的光束全部精确地被会聚于一点，从而提升感光层10接收的光通量。
根据纳米砖单元20的特性，每个像素11上的纳米砖单元20都需要将入射光束照射到感光层10上。因此，根据上述的纳米砖21的相位调节原理，以及纳米砖单元20等效为透镜的聚焦原理，结合式(1)，对于同一个像素11上方的纳米砖单元20的不同纳米砖21来说，每个纳米砖21所调节的入射光束的相位差为
Figure PCTCN2021106474-appb-000014
这样，就可以通过设置每个纳米砖21的转角
Figure PCTCN2021106474-appb-000015
以使每个纳米砖21所对应位置的入射光束得到相位调节，从而实现纳米砖单元20的聚焦式相位调节功能。
因此，可以理解，通过设置纳米砖单元20中每个纳米砖21的转角
Figure PCTCN2021106474-appb-000016
以使纳米砖21具有调节入射光束相位的作用，从而使得纳米砖单元20具有会聚光线的作用，以使多个纳米砖单元20所组成的阵列能够替代传统的由凸透镜组成的微透镜阵列，从而在保证多个纳米砖单元20具有会聚光线的作用的同时，设置在感光层10上方的以矩形阵列排布的多个纳米砖单元20还能提升所会聚的光线的总量，从而提升感光层10所接收的光通量，以提升图像传感器100的成像质量。
在某些实施方式中，多个像素11包括多个R像素111、多个G像素112和多个B像素113，纳米砖21为长方体结构；其中，设置在R像素111上方的纳米砖21长度为400nm至490nm、宽度为180nm至260nm、高度为700nm至780nm；设置在G像素112上方的纳米砖21的长度为390nm至460nm、宽度为160nm至240nm、高度为460nm至520nm；设置在B像素113上方的纳米砖21的长度为380nm至450nm、宽度为210nm至290nm、高度为580nm至630nm。
如此，对应不同的像素11，纳米砖21可以有不同的尺寸，以提升纳米砖单元20对照射纳米砖单元20上的入射光束的会聚效果，从而提升感光层10接收的入射光束的 光通量，提升感光层10的光电转换效率，进而提升图像传感器100的成像质量。
需要指出的是，R像素111表示用于接收经由纳米砖单元20会聚的红光的像素11，G像素112表示用于接收经由纳米砖单元20会聚的绿光的像素11，B像素113表示用于接收经由纳米砖单元20会聚的蓝光的像素11。
在某些实施方式中，请结合参阅图4，图4表示多个纳米砖单元20对入射光束的会聚作用，其中，多个纳米砖单元20上方的虚线箭头表示入射光束，自多个纳米砖单元20下方延伸并会聚的虚线表示被会聚后的入射光束。入射光束照射在多个纳米砖单元20一侧，每个纳米砖单元20将照射在纳米砖单元20上的入射光束会聚至纳米砖单元20的另一侧，以使设置在纳米砖单元20的另一侧的感光层10能够接收被会聚的入射光束，从而提升感光层10所接收的光通量，进而提升图像传感器100的成像质量。
在本实施方式中，可以在RGGB拜耳阵列的图像传感器100内设置上述实施方式所述的纳米砖单元20，首先，针对图像传感器100中对红光、绿光和蓝光三种不同颜色色光的相应要求，红光可以选取的波段为600nm至780nm，绿光可以选取的波段为480nm至600nm，蓝光可以选取的波段为400nm至480nm。在本申请实施方式中，选取主波长为630nm的红光、主波长为530nm的绿光和主波长为450nm的蓝光，采用电磁仿真软件Comsol对纳米砖21的结构参数进行设计和仿真，纳米砖21的结构参数包括纳米砖21的长、宽、高尺寸以及转角
Figure PCTCN2021106474-appb-000017
在仿真中，以圆偏光垂直入射到纳米砖单元20上，以透射的光束的转化效率以及响应的光波带宽作为优化对象，以获得正方形的基底单元31的边长尺寸C、纳米砖21的长度L、宽度W和高度H等参数的最佳尺寸。经仿真软件的优化计算，得到优化参数：对于主波长为630nm的红光，C＝650nm，L＝440nm，W＝230nm，H＝750nm；对于主波长为530nm的绿光，C＝600nm，L＝420nm，W＝200nm，H＝500nm；对于主波长为450nm的蓝光，C＝600nm，L＝430nm，W＝250nm，H＝600nm。
即是说，多个长度L为440nm、宽度W为230nm、高度H为750nm，以及和相邻纳米砖21的几何中心G的间隔距离p(p＝C)为650nm的纳米砖21，组成纳米砖单元20，该纳米砖单元20用于会聚主波长为630nm的红光，也即，该纳米砖单元20会聚的光束用于被R像素111接收。
多个长度L为420nm、宽度W为200nm、高度H为500nm，以及和相邻纳米砖21间隔距离p(p＝C)为600nm的纳米砖21，组成纳米砖单元20，该纳米砖单元20用于会聚主波长为530nm的红光，也即，该纳米砖单元20会聚的光束用于被G像素112接收。
多个长度L为430nm、宽度W为250nm、高度H为600nm，以及和相邻纳米砖21间隔距离p(p＝C)为600nm的纳米砖21，组成纳米砖单元20，该纳米砖单元20用于会聚主波长为630nm的红光，也即，该纳米砖单元20会聚的光束用于被B像素113接收。
随后，结合式(1)，根据多个纳米砖单元20对于入射光束的会聚光线的要求，按 照每个纳米砖21的位置对应设置纳米砖21的转角
Figure PCTCN2021106474-appb-000018
在某些实施方式中，纳米砖单元20采用微电子光刻工艺制成。在相关技术中，传统的凸透镜微透镜阵列的制作加工方法通常由熔融光刻胶法、反应离子束刻蚀技术、飞秒激光加工法等。熔融光刻胶法工艺流程为紫外曝光、显影和清洗、热熔成型，其特点是工艺简单，工艺参数稳定，但利用这种技术制备的微透镜光学性能不好，不适用于作为微透镜结构的材料。反应离子束蚀刻方法是采用离子轰击溅射和化学反应相结合的原理进行的，其特点是在横向上没有扩蚀现象，但是需要选择合理的控制参数才能提升成品率。飞秒激光加工法是利用激光在石英玻璃上刻蚀形成的凹坑点阵，在较短的腐蚀时间内，其边缘逐渐向外扩散，慢慢形成微透镜阵列结构。
如此，本申请实施方式的纳米砖单元20采用微电子光刻工艺制成，微电子光刻工艺具有更高的加工成品良率，同时还具有较快的加工速度，可以实现大批量生产，还能够降低加工成本，具有巨大的成本优势。
当然，在保证纳米砖单元20的产品良率和生产效率的前提下，还可以使用其它方法生产纳米砖单元20。
请参阅图1，在某些实施方式中，图像传感器100还包括滤光层40，滤光层40设置在感光层10和纳米砖单元20之间或者设置在纳米砖单元20上方，滤光层40用于对进入感光层10的光线进行过滤。
如此，滤光层40能够对即将进入感光层10的光线进行过滤，一方面能够减少红外光、紫外光等不可见光对图像传感器100成像的干扰，另一方面还能够在每个像素11接收光线时，减少每个像素11所接收的目标波长光线外的其它光线，最终提升图像传感器100的成像质量。
具体地，滤光层40可以包括多个滤光片，可以在每个像素11上方设置对应的滤光片，例如，在R像素111上方设置只允许波长为600nm至780nm的红光通过的的滤光片，在G像素112上方设置只允许波长为480nm至600nm的绿光通过的滤光片，在B像素113上方设置只允许波长为400nm至480nm的蓝光通过的的滤光片。
在其它实施方式中，还可以通过设置纳米砖21的长、宽、高等结构参数，以使纳米砖21对入射光束具有窄带响应特性，即不同结构参数的纳米砖21允许透射过不同波长的光线。例如，对于允许波段为600nm至780nm的红光通过的纳米砖21，该纳米砖21长度为400nm至490nm、宽度为180nm至260nm、高度为700nm至780nm。对于允许波段为480nm至600nm的绿光通过的纳米砖21，该纳米砖21的长度为390nm至460nm、宽度为160nm至240nm、高度为460nm至520nm。对于允许波段为400nm至480nm的蓝光通过的纳米砖21，该纳米砖21的长度为380nm至450nm、宽度为210nm至290nm、高度为580nm至630nm。
因此，可以通过设置纳米砖21的结构参数，使得纳米砖单元20具有窄带响应特性，从而使得纳米砖单元20在具有会聚入射光束作用的同时，还可以具有过滤光线的作用，以使图像传感器100无需设置滤光层40。如此，可以精简图像传感器100的结构，使得 图像传感器100的结构更加紧凑、重量更小，还能降低图像传感器100的生产成本。
请参阅图5，本申请实施方式的成像模组200包括以上任一实施方式的图像传感器100。
上述成像模组200中，间隔排布的多个亚波长尺寸的纳米砖21，亚波长的纳米砖21可以对照射在纳米砖21上的入射光束进行相位调节，从而能够将照射在纳米砖单元20上入射光束会聚到感光层10上，以使入射光束被感光层10接收，从而提升感光层10接收的光通量，以提升感光层10的光电转换效率，以有效提升图像传感器100的成像质量。
请参阅图5，本申请实施方式的电子装置1000包括以上任一实施方式的成像模组200。
上述电子装置1000中，间隔排布的多个亚波长尺寸的纳米砖21，亚波长的纳米砖21可以对照射在纳米砖21上的入射光束进行相位调节，从而能够将照射在纳米砖单元20上入射光束会聚到感光层10上，以使入射光束被感光层10接收，从而提升感光层10接收的光通量，以提升感光层10的光电转换效率，以有效提升图像传感器100的成像质量。
具体地，电子装置1000可以包括数码相机、手机、笔记本电脑、平板电脑等具有拍摄功能的电子装置1000。
在本说明书的描述中，参考术语“一个实施方式”、“某些实施方式”、“示意性实施方式”、“示例”、“具体示例”、或“一些示例”等的描述意指结合所述实施方式或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施方式或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。
尽管上文已经示出和描述了本申请的实施方式，本领域的普通技术人员可以理解：在不脱离本申请的原理和宗旨的情况下可以对这些实施方式进行多种变化、修改、替换和变型，本申请的范围由权利要求及其等同物限定。

Claims (20)

  1. 一种图像传感器，其特征在于，包括：
    感光层；和
    设置在所述感光层上方的多个纳米砖单元，所述纳米砖单元包括多个纳米砖，多个所述纳米砖间隔排布，多个所述纳米砖具有亚波长尺寸，多个所述纳米砖被配置为使照射在所述纳米砖单元上的入射光束能够被会聚以被所述感光层接收。
  2. 根据权利要求1所述的图像传感器，其特征在于，所述纳米砖为非晶硅纳米砖。
  3. 根据权利要求1所述的图像传感器，其特征在于，所述感光层包括阵列排布的多个像素，每个所述像素至少对应设置一个所述纳米砖单元，所述纳米砖单元覆盖所述像素。
  4. 根据权利要求3所述的图像传感器，其特征在于，所述纳米砖包括底面，所述底面包括相互垂直的第一边和第二边，所述感光层包括相互垂直的第一轴线和第二轴线，所述第一轴线和所述第二轴线均与所述图像传感器的光轴垂直，所述第一边与所述第一轴线的夹角为
    Figure PCTCN2021106474-appb-100001
    每个所述纳米砖的转角
    Figure PCTCN2021106474-appb-100002
    满足以下关系式：
    Figure PCTCN2021106474-appb-100003
    其中，r为所述纳米砖的几何中心和与所述纳米砖相对应的所述像素的几何中心之间的距离，f′为所述纳米砖单元的焦距，λ为所述入射光束的波长。
  5. 根据权利要求3所述的图像传感器，其特征在于，多个所述像素包括多个R像素、多个G像素和多个B像素，所述纳米砖为长方体结构；
    其中，设置在所述R像素上方的所述纳米砖长度为400nm至490nm、宽度为180nm至260nm、高度为700nm至780nm；
    设置在所述G像素上方的所述纳米砖的长度为390nm至460nm、宽度为160nm至240nm、高度为460nm至520nm；
    设置在所述B像素上方的所述纳米砖的长度为380nm至450nm、宽度为210nm至290nm、高度为580nm至630nm。
  6. 根据权利要求1所述的图像传感器，其特征在于，多个所述纳米砖单元呈矩形阵列排布，每个所述纳米砖单元的多个所述纳米砖的几何中心呈矩形阵列排布。
  7. 根据权利要求6所述的图像传感器，其特征在于，每个所述纳米砖单元的相邻两 个所述纳米砖的几何中心之间的距离为580nm至700nm。
  8. 根据权利要求1所述的图像传感器，其特征在于，所述图像传感器还包括基底层，所述基底层位于所述感光层和所述纳米砖单元之间，多个所述纳米砖单元设置在所述基底层上。
  9. 根据权利要求1所述的图像传感器，其特征在于，所述基底层由石英玻璃制成。
  10. 根据权利要求1所述的图像传感器，其特征在于，所述基底层包括多个基底单元，每个所述基底单元上对应设置有一个所述纳米砖，所述纳米砖的几何中心与所述基底单元的几何中心重合。
  11. 根据权利要求1所述的图像传感器，其特征在于，所述图像传感器还包括滤光层，所述滤光层设置在所述感光层和所述纳米砖单元之间，或者设置在所述纳米砖单元上方，所述滤光层用于对进入所述感光层的光线进行过滤。
  12. 一种成像模组，其特征在于，包括图像传感器，所述图像传感器包括：
    感光层；和
    设置在所述感光层上方的多个纳米砖单元，所述纳米砖单元包括多个纳米砖，多个所述纳米砖间隔排布，多个所述纳米砖具有亚波长尺寸，多个所述纳米砖被配置为使照射在所述纳米砖单元上的入射光束能够被会聚以被所述感光层接收。
  13. 根据权利要求12所述的成像模组，其特征在于，所述纳米砖为非晶硅纳米砖。
  14. 根据权利要求12所述的成像模组，其特征在于，所述感光层包括阵列排布的多个像素，每个所述像素至少对应设置一个所述纳米砖单元，所述纳米砖单元覆盖所述像素。
  15. 根据权利要求14所述的成像模组，其特征在于，所述纳米砖包括底面，所述底面包括相互垂直的第一边和第二边，所述感光层包括相互垂直的第一轴线和第二轴线，所述第一轴线和所述第二轴线均与所述图像传感器的光轴垂直，所述第一边与所述第一轴线的夹角为
    Figure PCTCN2021106474-appb-100004
    每个所述纳米砖的转角
    Figure PCTCN2021106474-appb-100005
    满足以下关系式：
    Figure PCTCN2021106474-appb-100006
    其中，r为所述纳米砖的几何中心和与所述纳米砖相对应的所述像素的几何中心之间的距离，f′为所述纳米砖单元的焦距，λ为所述入射光束的波长。
  16. 根据权利要求14所述的成像模组，其特征在于，多个所述像素包括多个R像素、多个G像素和多个B像素，所述纳米砖为长方体结构；
    其中，设置在所述R像素上方的所述纳米砖长度为400nm至490nm、宽度为180nm至260nm、高度为700nm至780nm；
    设置在所述G像素上方的所述纳米砖的长度为390nm至460nm、宽度为160nm至240nm、高度为460nm至520nm；
    设置在所述B像素上方的所述纳米砖的长度为380nm至450nm、宽度为210nm至290nm、高度为580nm至630nm。
  17. 根据权利要求1所述的成像模组，其特征在于，多个所述纳米砖单元呈矩形阵列排布，每个所述纳米砖单元的多个所述纳米砖的几何中心呈矩形阵列排布。
  18. 根据权利要求17所述的成像模组，其特征在于，每个所述纳米砖单元的相邻两个所述纳米砖的几何中心之间的距离为580nm至700nm。
  19. 根据权利要求12所述的成像模组，其特征在于，所述基底层包括多个基底单元，每个所述基底单元上对应设置有一个所述纳米砖，所述纳米砖的几何中心与所述基底单元的几何中心重合。
  20. 一种电子装置，其特征在于，所述电子装置包括权利要求12-19任一项所述的成像模组。
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CN107065491A (zh) * 2017-06-20 2017-08-18 武汉大学 应用于全息防伪的纳米砖阵列全息片及其设计方法
US20200301053A1 (en) * 2019-03-20 2020-09-24 Coherent AI LLC Optical sensing device employing light intensity detectors integrated with nanostructures
CN211122509U (zh) * 2019-10-28 2020-07-28 清华大学 光谱仪结构及电子设备
CN111352237A (zh) * 2020-04-24 2020-06-30 浙江舜宇光学有限公司 一种超表面成像装置
CN112135028A (zh) * 2020-09-25 2020-12-25 Oppo（重庆）智能科技有限公司 图像传感器、成像模组和电子装置

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