WO2022049845A1 - Composition de polissage, procédé destiné à usiner une plaquette, et plaquette de silicium - Google Patents

Composition de polissage, procédé destiné à usiner une plaquette, et plaquette de silicium Download PDF

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Publication number
WO2022049845A1
WO2022049845A1 PCT/JP2021/020581 JP2021020581W WO2022049845A1 WO 2022049845 A1 WO2022049845 A1 WO 2022049845A1 JP 2021020581 W JP2021020581 W JP 2021020581W WO 2022049845 A1 WO2022049845 A1 WO 2022049845A1
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WO
WIPO (PCT)
Prior art keywords
polishing
wafer
etching
abrasive grains
amount
Prior art date
Application number
PCT/JP2021/020581
Other languages
English (en)
Japanese (ja)
Inventor
正彬 大関
達夫 阿部
Original Assignee
信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Priority to CN202180053731.0A priority Critical patent/CN116210073A/zh
Priority to KR1020237007342A priority patent/KR20230061382A/ko
Publication of WO2022049845A1 publication Critical patent/WO2022049845A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Abstract

La présente invention concerne une composition de polissage caractérisée en ce qu'elle inclut des grains abrasifs et au moins un matériau parmi des polymères et tensioactifs solubles dans l'eau, le ratio de la concentration (ppm en poids) de grains abrasifs par rapport à la concentration (ppm en poids) de carbone organique total dans la composition de polissage étant inférieur ou égal à 30. Cela rend possible de mettre en œuvre : une composition de polissage qui permet de mettre en œuvre une plaquette dans laquelle la manifestation de défauts de cristaux et de défauts de polissage est inhibée ; un procédé destiné à usiner une plaquette qui permet de mettre en œuvre une plaquette dans laquelle la manifestation de défauts de cristaux et de défauts de polissage est inhibée ; et une plaquette de silicium dans laquelle la manifestation de défauts de cristaux et de défauts de polissage peut être inhibée, même lorsque la plaquette de silicium est gravée.
PCT/JP2021/020581 2020-09-04 2021-05-31 Composition de polissage, procédé destiné à usiner une plaquette, et plaquette de silicium WO2022049845A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202180053731.0A CN116210073A (zh) 2020-09-04 2021-05-31 研磨用组合物、晶圆的加工方法及硅晶圆
KR1020237007342A KR20230061382A (ko) 2020-09-04 2021-05-31 연마용 조성물, 웨이퍼의 가공방법, 및 실리콘웨이퍼

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-148688 2020-09-04
JP2020148688A JP7380492B2 (ja) 2020-09-04 2020-09-04 研磨用組成物及びウェーハの加工方法

Publications (1)

Publication Number Publication Date
WO2022049845A1 true WO2022049845A1 (fr) 2022-03-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2021/020581 WO2022049845A1 (fr) 2020-09-04 2021-05-31 Composition de polissage, procédé destiné à usiner une plaquette, et plaquette de silicium

Country Status (5)

Country Link
JP (1) JP7380492B2 (fr)
KR (1) KR20230061382A (fr)
CN (1) CN116210073A (fr)
TW (1) TW202210596A (fr)
WO (1) WO2022049845A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053050A (ja) * 1999-06-01 2001-02-23 Komatsu Electronic Metals Co Ltd 半導体基板の洗浄方法
WO2007046420A1 (fr) * 2005-10-19 2007-04-26 Hitachi Chemical Co., Ltd. Suspension epaisse d’oxyde de cerium, liquide de polissage d’oxyde de cerium et procede de polissage de substrat les utilisant
WO2013161701A1 (fr) * 2012-04-26 2013-10-31 株式会社 フジミインコーポレーテッド Procédé de fabrication d'une composition de polissage
WO2016158328A1 (fr) * 2015-04-01 2016-10-06 三井金属鉱業株式会社 Abrasif et suspension épaisse contenant ce dernier
WO2017126268A1 (fr) * 2016-01-19 2017-07-27 株式会社フジミインコーポレーテッド Composition de polissage et procédé de polissage d'un substrat en silicium
JP2019145750A (ja) * 2018-02-23 2019-08-29 株式会社Sumco ウェーハの片面研磨方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014041978A (ja) 2012-08-23 2014-03-06 Fujimi Inc 研磨用組成物、研磨用組成物の製造方法、及び研磨用組成物原液の製造方法
JP2019121795A (ja) 2017-12-27 2019-07-22 花王株式会社 シリコンウェーハの製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053050A (ja) * 1999-06-01 2001-02-23 Komatsu Electronic Metals Co Ltd 半導体基板の洗浄方法
WO2007046420A1 (fr) * 2005-10-19 2007-04-26 Hitachi Chemical Co., Ltd. Suspension epaisse d’oxyde de cerium, liquide de polissage d’oxyde de cerium et procede de polissage de substrat les utilisant
WO2013161701A1 (fr) * 2012-04-26 2013-10-31 株式会社 フジミインコーポレーテッド Procédé de fabrication d'une composition de polissage
WO2016158328A1 (fr) * 2015-04-01 2016-10-06 三井金属鉱業株式会社 Abrasif et suspension épaisse contenant ce dernier
WO2017126268A1 (fr) * 2016-01-19 2017-07-27 株式会社フジミインコーポレーテッド Composition de polissage et procédé de polissage d'un substrat en silicium
JP2019145750A (ja) * 2018-02-23 2019-08-29 株式会社Sumco ウェーハの片面研磨方法

Also Published As

Publication number Publication date
JP2022043424A (ja) 2022-03-16
TW202210596A (zh) 2022-03-16
KR20230061382A (ko) 2023-05-08
JP7380492B2 (ja) 2023-11-15
CN116210073A (zh) 2023-06-02

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