WO2022048092A1 - Mtj的制作方法和mtj - Google Patents

Mtj的制作方法和mtj Download PDF

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WO2022048092A1
WO2022048092A1 PCT/CN2020/142225 CN2020142225W WO2022048092A1 WO 2022048092 A1 WO2022048092 A1 WO 2022048092A1 CN 2020142225 W CN2020142225 W CN 2020142225W WO 2022048092 A1 WO2022048092 A1 WO 2022048092A1
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layer
magnetic
vapor deposition
physical vapor
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简红
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浙江驰拓科技有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • the present disclosure relates to the technical field of magnetic tunnel junctions, and in particular, to a method for fabricating an MTJ and an MTJ.
  • STT-MRAM Spin Transfer Torque Magnetic Random Access Memory
  • a typical MTJ mainly consists of a pinned layer, a barrier layer and a free layer.
  • the pinned layer is also called the reference layer, its magnetization direction remains unchanged, and only the magnetization direction of the free layer is changed to make it the same or opposite to the pinned layer.
  • MTJ devices rely on quantum tunneling to move electrons through the barrier layer. The tunneling probability of polarized electrons and the relative magnetization directions of the pinned and free layers are related.
  • the tunneling probability of polarized electrons is high, and the MTJ device exhibits a low resistance state (Rp) at this time; when the magnetization directions of the pinned layer and the free layer are opposite, The tunneling probability of polarized electrons is low, and at this time, the MTJ device exhibits a high resistance state (Rap).
  • the MRAM uses the Rp state and the Rap state of the MTJ device to represent the logic states "1" and "0" respectively, thereby realizing data storage.
  • STT-MRAM utilizes the spin transfer torque effect (STT) of current to write to MRAM.
  • STT spin transfer torque effect
  • the polarization current will exchange and interact with the local electrons of the magnetic film, thereby exerting a torque on the local magnetic moment of the magnetic film, making it tend to interact with the spin-polarized film.
  • the currents are polarized in the same direction, a phenomenon known as the spin transfer torque effect (STT effect).
  • STT effect spin transfer torque effect
  • a polarization current opposite to its magnetization direction is applied to the magnetic film.
  • the intensity of the polarization current exceeds a certain threshold, the magnetic moment of the magnetic film itself can be reversed.
  • the magnetization direction of the free layer of the MTJ device can be made parallel or antiparallel to the magnetization direction of the pinned layer, thereby realizing the "write" operation.
  • RA resistance value
  • Vbd breakdown voltage
  • the main purpose of the present disclosure is to provide a method for manufacturing an MTJ and an MTJ, so as to solve the problem of poor resistance to erasing and writing in the method for reducing RA in the prior art.
  • a method for fabricating an MTJ comprising: sequentially forming a stacked reference layer, an insulating barrier layer and a free layer, wherein the reference layer and the free layer are Both contain at least one magnetic layer, and at least one of the reference layer and the free layer is formed by physical vapor deposition, and in the process of forming at least one magnetic layer by physical vapor deposition, xenon and krypton are used. At least one of the gases is used as a sputtering gas.
  • the method further includes: forming an artificial antiferromagnetic layer, the artificial antiferromagnetic layer comprising a first magnetic composite layer, an antiferromagnetic coupling layer and a second magnetic composite layer , wherein the first magnetic composite layer and the second magnetic composite layer are antiferromagnetically coupled through the antiferromagnetic coupling layer, and the magnetization directions of the first magnetic composite layer and the second magnetic composite layer are opposite, The magnetization direction of the first magnetic composite layer and the magnetization direction of the second magnetic composite layer are the same as the thickness direction of the antiferromagnetic coupling layer; a structural transition layer is formed on the surface of the artificial antiferromagnetic layer, The structural transition layer is an amorphous structural layer, and the reference layer is formed on the surface of the structural transition layer.
  • forming a structural transition layer on the surface of the artificial antiferromagnetic layer includes: using a physical vapor deposition method to form the structural transition layer on the surface of the artificial antiferromagnetic layer, and the structural transition layer is The sputtering gas used in the deposition process of the reference layer is different from the sputtering gas used in the deposition process of the reference layer.
  • the process of forming the reference layer includes: using a physical vapor deposition method to form the reference layer, and using krypton gas or xenon gas as a sputtering gas to prepare the magnetic layer adjacent to the insulating barrier layer.
  • At least one of the magnetic layers of the reference layer and at least one of the magnetic layers of the free layer are both formed by a physical vapor deposition method.
  • the process of forming the free layer includes: using a physical vapor deposition method to deposit a first magnetic layer on the surface of the insulating barrier layer, and using krypton gas or xenon gas as a sputtering gas; using a physical vapor deposition method A non-magnetic coupling layer is deposited on the surface of the first magnetic layer, and argon gas is used as a sputtering gas; a second magnetic layer is deposited on the surface of the non-magnetic coupling layer by a physical vapor deposition method, and a xenon gas or Argon was used as sputtering gas.
  • the deposition power is less than or equal to 800W.
  • the method before forming the reference layer, the method further includes: forming a bottom electrode, the reference layer is formed on the surface of the bottom electrode, and after forming the free layer, the method further includes: A capping layer and a top electrode are sequentially formed on the surface of the free layer.
  • the material of the reference layer includes Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, CoFeNi, CoFeB, NiFeB, CoNiB, CoFeNiB, FePt, FePd, CoPt, CoPd, CoFePt, CoFePd , at least one of FePtPd, CoPtPd and CoFePtPd
  • the material of the free layer includes Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, CoFeNi, CoFeB, NiFeB, CoNiB, CoFeNiB, FePt, FePd , at least one of CoPt, CoPd, CoFePt, CoFePd, FePtPd, CoPtPd and CoFePtPd
  • the material of the insulating barrier layer includes MgO, AlO X , Mg
  • the material of the structural transition layer includes at least one of Ta, Mo, W, Ti, Hf, Zr, Nb, TaN, TiN, NbN, TaB, TiB, MoB, HfB, ZrB, NbN and WB .
  • an MTJ prepared by any one of the methods.
  • the xenon and krypton as carrier gases are dissociated by the electromagnetic field and then bombard the target, so that the atoms in the target are deposited to the insulating barrier layer, but as inert gases, the xenon and The atoms of krypton gas are heavier and difficult to be accelerated by electromagnetic fields, so it can effectively reduce the bombardment of the interface of the reference layer and the interface between the insulating barrier layer and the free layer during the physical vapor deposition process, and avoid all The interface structure is damaged, which reduces the diffusion between different materials at the interface, thereby improving the spin polarizability and the overall crystal (001) orientation of the reference layer and the free layer, so as to reduce the RA of the device.
  • the write voltage of the device is reduced, thereby improving the effect of the device's resistance to erasing and writing.
  • FIG. 1 shows a schematic structural diagram of an MTJ according to a specific embodiment of the present disclosure
  • FIG. 2 shows a schematic structural diagram of an MTJ according to another specific embodiment of the present disclosure.
  • top electrode 10, top electrode; 20, cover layer; 30, free layer; 40, insulating barrier layer; 50, reference layer; 60, structural transition layer; 70, artificial antiferromagnetic layer; 80, seed layer; 90, bottom electrode 101, the first magnetic layer; 102, the second magnetic layer; 103, the non-magnetic coupling layer.
  • the method for reducing RA in the prior art has poor resistance to erasing and writing.
  • the present disclosure proposes a method for manufacturing an MTJ and an MTJ.
  • a method for fabricating an MTJ Magnetic Tunnel Junctions, magnetic tunnel junction
  • the structure of the MTJ is shown in FIG.
  • at least one of xenon gas and krypton gas is used as the sputtering gas.
  • the physical vapor deposition method is to use physical methods under vacuum conditions to vaporize the solid surface into gaseous atoms, molecules or partially ionized ions, and deposit a film with a special function on the surface of the substrate through a low-pressure gas process.
  • the above-mentioned magnetic layer in the above-mentioned reference layer and the above-mentioned free layer is prepared by using the physical vapor deposition method and at least one of xenon gas and krypton gas is used as the sputtering gas by the above-mentioned MTJ production method.
  • the above-mentioned xenon gas is and krypton as the carrier gas are dissociated by the electromagnetic field and bombard the target, so that the atoms in the target are deposited on the insulating barrier layer, but as inert gases, the atoms of the xenon and krypton are heavier and difficult to be accelerated by the electromagnetic field.
  • the bombardment of the interface of the reference layer and the interface of the insulating barrier layer and the free layer during the physical vapor deposition process can be effectively reduced, the damage of the interface structure is avoided, and the interaction between different materials at the interface is reduced. Diffusion, thereby improving the spin polarizability and the overall crystal (001) orientation of the reference layer and the free layer, reducing the RA of the device and reducing the writing voltage of the device, thereby improving the resistance of the device. Effect.
  • the above-mentioned method before forming the above-mentioned reference layer, further includes: forming an artificial antiferromagnetic layer 70 , as shown in FIG. 1 .
  • the above artificial antiferromagnetic layer includes a first magnetic composite layer, an antiferromagnetic coupling layer and a second magnetic composite layer. Wherein, the first magnetic composite layer and the second magnetic composite layer are antiferromagnetically coupled through the antiferromagnetic coupling layer, the magnetization directions of the first magnetic composite layer and the second magnetic composite layer are opposite, and the first magnetic composite layer is opposite.
  • the magnetization direction of the layer and the magnetization direction of the second magnetic composite layer are the same as the thickness direction of the antiferromagnetic coupling layer; a structural transition layer 60 is formed on the surface of the artificial antiferromagnetic layer, and the structural transition layer is an amorphous structure. layer, the above-mentioned reference layer is formed on the surface of the above-mentioned structural transition layer.
  • the above-mentioned xenon gas and krypton gas are dissociated by the electromagnetic field and then bombard the target material, so that the atoms in the target material are deposited on the above-mentioned MTJ substructure, and the above-mentioned substructure is the above-mentioned structural transition layer and the above-mentioned insulating barrier layer.
  • the atoms of the above-mentioned xenon gas and krypton gas are heavier and difficult to be accelerated by the electromagnetic field, so it can effectively reduce the physical vapor deposition process.
  • the bombardment of the interface of the above-mentioned layer thereby reducing the diffusion between different materials at the above-mentioned interface, improving the spin polarizability and the overall crystal (001) orientation of the above-mentioned reference layer and the above-mentioned free layer, and further reducing the RA of the device,
  • the writing voltage of the device is reduced, and the effect of improving the resistance to erasing and writing of the device is improved.
  • a structural transition layer 60 is formed on the surface of the artificial antiferromagnetic layer, as shown in FIG. 1 .
  • the method includes: using physical vapor deposition method to form the structural transition layer on the surface of the artificial antiferromagnetic layer, and the sputtering gas used in the deposition process of the structural transition layer is different from the sputtering gas used in the deposition process of the reference layer. Different sputtering gases are used in the deposition process, which is more conducive to the formation of the amorphous structure of the transition layer of the structure, and the formation of the (001) crystal orientation of the reference layer, the insulating barrier layer and the free layer of the subsequent growth.
  • the process of forming the reference layer includes: using a physical vapor deposition method to form the reference layer, and using krypton or xenon as a sputtering gas to prepare the magnetic layer adjacent to the insulating barrier layer .
  • krypton gas or xenon gas is difficult to be accelerated by the electromagnetic field, so it can effectively reduce the bombardment of the transition layer of the above structure during the physical vapor deposition process, thereby The diffusion of the material at the interface between the above-mentioned structural transition layer and the above-mentioned reference layer is better controlled, and the diffusion of the above-mentioned structural transition layer material to the above-mentioned insulating barrier layer is avoided, thereby reducing RA and further improving the erasing and writing resistance of the device.
  • At least one of the above-mentioned magnetic layers of the above-mentioned reference layer and at least one of the above-mentioned magnetic layers of the above-mentioned free layer are formed by a physical vapor deposition method. This further ensures that the device has better resistance to erasing and writing.
  • the process of forming the above-mentioned free layer includes: depositing a first magnetic layer 101 on the surface of the above-mentioned insulating barrier layer by using a physical vapor deposition method, as shown in FIG.
  • Xenon gas is used as sputtering gas
  • physical vapor deposition method is used to deposit a non-magnetic coupling layer 103 on the surface of the above-mentioned first magnetic layer, and argon gas is used as sputtering gas
  • physical vapor deposition method is used to deposit on the surface of the above-mentioned non-magnetic coupling layer
  • a second magnetic layer 102 is deposited
  • xenon or argon is used as the sputtering gas.
  • the atomic weight of the above-mentioned sputtering gas is large, and it is difficult for the electromagnetic field to accelerate the above-mentioned sputtering gas. Therefore, the bombardment of the interface of the first magnetic layer, the non-magnetic coupling layer and the second magnetic layer during the physical vapor deposition process can be effectively reduced, Thus, the spin polarizability and crystal orientation of the first magnetic layer, the non-magnetic coupling layer and the second magnetic layer are better improved, and the better resistance to erasing and writing of the device is ensured.
  • the deposition power is less than or equal to 800W.
  • the smaller deposition power ensures that the above-mentioned reference layer has fewer defects during the preparation process, and further ensures better performance of the device.
  • the method before forming the reference layer, further includes forming a bottom electrode 90. As shown in FIG. 1, the reference layer 50 is formed on the surface of the bottom electrode 90. After the layer 30 is formed, the above-mentioned method further includes sequentially forming a capping layer 20 and a top electrode 10 on the surface of the above-mentioned free layer 30 .
  • the above-mentioned MTJ structure made by the above-mentioned method makes the device have better resistance to erasing and writing.
  • the material of the reference layer includes Co, Fe, Ni, CoB, FeB, NiB, CoFe, At least one of NiFe, CoNi, CoFeNi, CoFeB, NiFeB, CoNiB, CoFeNiB, FePt, FePd, CoPt, CoPd, CoFePt, CoFePd, FePtPd, CoPtPd and CoFePtPd
  • the material of the free layer includes Co, Fe, Ni, CoB , FeB, NiB, CoFe, NiFe, CoNi, CoFeNi, CoFeB, NiFeB, CoNiB, CoFeNiB, FePt, FePd, CoPt, CoPd, CoFePt, CoFePd, FePtPd, CoPtPd, CoPtPd, CoFePt, FePtPd, CoPtPd, CoFePt, FePtPd,
  • the "X" in the chemical formula of the materials in these insulating barrier layers is actually the number of oxygen atoms in a corresponding molecule. Although the number of oxides in these chemical formulas is represented by X, it does not represent These materials all have the same number of oxygen atoms.
  • the material of the above-mentioned structural transition layer includes Ta, Mo, W, Ti, Hf, Zr, Nb, TaN, TiN, NbN, TaB, TiB, MoB, HfB, ZrB, NbN and At least one of WB.
  • an MTJ is provided, and the above-mentioned MTJ is prepared by any one of the above-mentioned methods.
  • the above-mentioned MTJ formed by the above-mentioned MTJ manufacturing method can effectively reduce the RA of the device and improve the spin polarizability of the reference layer and the free layer, thereby reducing the writing voltage of the device and making the device have better resistance to erasing and writing.
  • the MTJ prepared by any of the above methods can achieve low RA in a thicker insulating barrier layer, improve the uniformity of the device writing voltage distribution, and improve the device yield.
  • the specific formation process includes:
  • the above-mentioned seed layer 80 and the above-mentioned artificial antiferromagnetic layer 70 are sequentially deposited on the above-mentioned bottom electrode 90 by a physical vapor deposition method.
  • the material of the above-mentioned artificial anti-ferromagnetic layer 70 can be one or a combination of Co, Pt, and Ru. ;
  • a structural transition layer 60 is prepared on the artificial antiferromagnetic layer 70, and the material of the structural transition layer 60 may be Ta;
  • krypton gas is used as the sputtering gas to prepare the reference layer 50, and the material of the above-mentioned reference layer 50 may be CoFeB;
  • An insulating barrier layer 40 is prepared on the above-mentioned reference layer 50, and the material of the above-mentioned insulating barrier layer 40 may be MgO;
  • a free layer 30 is prepared on the above-mentioned insulating barrier layer 40, and the material of the above-mentioned free layer 30 can be CoFeB, Ta or CoFeB; a cover layer 20 is prepared on the above-mentioned free layer 30, and the material of the above-mentioned cover layer 20 can be MgO;
  • the top electrode 10 is prepared on the cap layer 20 described above.
  • the sputtering gas for preparing the reference layer 50 can also be xenon gas
  • the material of the reference layer 50 can also be Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, CoFeNi, NiFeB, CoNiB, CoFeNiB , FePt, FePd, CoPt, CoPd, CoFePt, CoFePd, FePtPd, CoPtPd and CoFePtPd, one or a combination of several
  • the material of the above-mentioned free layer 30 can also be Co, Fe, Ni, CoB, FeB, NiB, CoFe , NiFe, CoNi, CoFeNi, NiFeB, CoNiB, CoFeNiB, FePt, FePd, CoPt, CoPd, CoFePt, CoFePd, FePtPd, CoPtPd and CoFeP
  • the MTJ structure shown in Figure 2 is formed, and the specific formation process includes:
  • the artificial antiferromagnetic layer 70, the structural transition layer 60, the reference layer 50 and the insulating barrier layer 40 are sequentially deposited on the bottom electrode 90, and krypton gas is used as the sputtering gas to prepare the first layer adjacent to the insulating barrier layer 40.
  • a magnetic layer 101, the non-magnetic coupling layer 103 is deposited on the first magnetic layer 101 by using argon gas as a sputtering gas
  • the second magnetic layer 102 is deposited on the non-magnetic coupling layer 103 by using xenon gas as a sputtering gas
  • the capping layer 20 and the top electrode 10 are deposited on the second magnetic layer 102 .
  • the MTJ structure shown in Figure 2 is formed, and the specific formation process includes:
  • the artificial antiferromagnetic layer 70 , the structural transition layer 60 , the reference layer 50 , and the insulating barrier layer 40 are sequentially deposited on the bottom electrode 90 , and xenon gas is used as the sputtering gas to prepare the first layer adjacent to the insulating barrier layer 40 .
  • the above-mentioned non-magnetic coupling layer 103 is deposited on the above-mentioned first magnetic layer 101 by using argon gas as a sputtering gas
  • the above-mentioned second magnetic layer 102 is deposited on the above-mentioned non-magnetic coupling layer 103 by using argon gas as a sputtering gas
  • the capping layer 20 and the top electrode 10 are deposited on the second magnetic layer 102 .
  • the preparation method of MTJ of the present disclosure uses physical vapor deposition method and adopts at least one in xenon gas and krypton gas to prepare above-mentioned magnetic layer in above-mentioned reference layer and above-mentioned free layer as sputtering gas, in this process , the above-mentioned xenon and krypton are bombarded by the target material after being dissociated by the electromagnetic field as carrier gas, so that the atoms in the target material are deposited on the above-mentioned insulating barrier layer, but as inert gases, the atoms of the above-mentioned xenon and krypton are heavier and difficult to be
  • the electromagnetic field is accelerated, so it can effectively reduce the bombardment of the interface of the above-mentioned reference layer and the interface of the above-mentioned insulating barrier layer and the above-mentioned free layer during the physical vapor deposition process, avoiding the damage of the above-mentioned interface structure
  • the diffusion between the reference layer and the free layer and the overall crystal (001) orientation of the above-mentioned reference layer and the above-mentioned free layer are improved, so as to reduce the RA of the device and at the same time reduce the write voltage of the device, thereby improving the resistance of the device.
  • the MTJ of the present disclosure is prepared by using the above-mentioned MTJ manufacturing method, which can effectively reduce the RA of the device and improve the spin polarizability of the reference layer and the free layer, thereby reducing the writing voltage of the device and making the device better. resistance to erasing and writing.
  • the MTJ prepared by using the above method can achieve low RA in a thick insulating barrier layer, improve the uniformity of the device writing voltage distribution, and improve the device yield.

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Abstract

一种MTJ的制作方法和MTJ，该制作方法包括依次形成叠置的参考层（50）、绝缘势垒层（40）以及自由层（30），其中，参考层（50）与自由层（30）中的至少一个采用物理气相沉积法形成，且采用物理气相沉积形成参考层（50）与自由层（30）中的至少一个磁性层的过程中，采用氙气和氪气中的至少一种作为溅射气体。该方法中，氙气和氪气的原子较重，难以被电磁场加速，因此可以有效的减小物理气相沉积过程中对参考层（50）与自由层（30）界面的轰击，从而较好的控制了界面材料的扩散，提高参考层（50）与自由层（30）的自旋极化率和整体晶体取向，达到降低器件的RA的同时，降低器件的写入电压，从而提高器件的耐擦写性能的效果。

Description

MTJ的制作方法和MTJ
本公开以2020年09月04日递交的、申请号为202010924323.5且名称为“MTJ的制作方法和MTJ”的专利文件为优先权文件，该文件的全部内容通过引用结合在本公开中。
技术领域
本公开涉及磁隧道结技术领域，具体而言，涉及一种MTJ的制作方法和MTJ。
背景技术
自旋转移力矩磁性随机存储器(Spin Transfer Torque Magnetic Random Access Memory，简称STT-MRAM)是一种新型非易失存储器，其核心存储单元为MTJ结构。典型的MTJ主要由钉扎层、势垒层和自由层组成。钉扎层也称为参考层，它的磁化方向保持不变，仅改变自由层的磁化方向使之与钉扎层同向或反向。MTJ器件依靠量子隧穿效应使电子通过势垒层。极化电子的隧穿概率和钉扎层与自由层的相对磁化方向有关。当钉扎层与自由层的磁化方向相同时，极化电子的隧穿概率较高，此时，MTJ器件表现为低电阻状态(Rp)；而当钉扎层与自由层磁化方向相反时，极化电子的隧穿概率较低，此时，MTJ器件表现为高电阻状态(Rap)。MRAM分别利用MTJ器件的Rp状态和Rap状态来表示逻辑状态“1”和“0”，从而实现数据的存储。隧穿磁电阻值表示为：TMR＝100％×(Rap-Rp)/Rp。
STT-MRAM利用电流的自旋转移力矩效应(STT)对MRAM进行写入操作。当自旋极化电流经过一磁性薄膜时，极化电流会与磁性薄膜的局域电子发生交换相互作用，从而对磁性薄膜的局域磁矩施加一个力矩，使之倾向于与自旋极化电流的极化方向相同，这一现象称为自旋转移力矩效应(STT效应)。对磁性薄膜施加一个与之磁化方向相反的极化电流，当极化电流强度超过一定阈值时，磁性薄膜本身的磁矩即可发生翻转。利用自旋转移力矩效应可以使得MTJ器件的自由层的磁化方向与钉扎层的磁化方向平行或反平行，从而实现“写”操作。
随着MRAM工艺节点的降低，需要进一步降低MTJ的RA(电阻值)，从而降低写入电压，提高器件的耐久性和写入速度。传统的降低RA的主要途径是减小势垒层的厚度，但是该方法会导致TMR降低，写入电流密度增大，器件的写入电压均一性变差，击穿电压(Vbd)降低等一系列问题，降低器件耐擦写性能和良率。
在背景技术部分中公开的以上信息只是用来加强对本文所描述技术的背景技术的理解，因此，背景技术中可能包含某些信息，这些信息对于本领域技术人员来说并未形成在本国已知的现有技术。
发明内容
本公开的主要目的在于提供一种MTJ的制作方法和MTJ，以解决现有技术中的降低RA的方法的耐擦写性能较差的问题。
为了实现上述目的，根据本公开的一个方面，提供了一种MTJ的制作方法，包括：依次形成叠置的参考层、绝缘势垒层以及自由层，其中，所述参考层与所述自由层均包含至少一个磁性层，所述参考层与所述自由层的至少一个所述磁性层采用物理气相沉积法形成，且采用物理气相沉积形成至少一个所述磁性层的过程中，采用氙气和氪气中的至少一种作为溅射气体。
可选地，在形成所述参考层之前，所述方法还包括：形成人工反铁磁层，所述人工反铁磁层包括第一磁性复合层，反铁磁耦合层和第二磁性复合层，其中，所述第一磁性复合层和第二磁性复合层通过所述反铁磁耦合层呈反铁磁耦合，所述第一磁性复合层和所述第二磁性复合层的磁化方向相反，所述第一磁性复合层的磁化方向和所述第二磁性复合层的磁化方向与所述反铁磁耦合层的厚度方向相同；在所述人工反铁磁层的表面上形成结构过渡层，所述结构过渡层为非晶结构层，所述参考层形成在所述结构过渡层的表面上。
可选地，所述人工反铁磁层的表面上形成结构过渡层，包括：采用物理气相沉积法在所述人工反铁磁层的表面上形成所述结构过渡层，且所述结构过渡层的沉积过程采用的溅射气体与所述参考层沉积过程中采用的溅射气体不同。
可选地，形成所述参考层的过程包括：采用物理气相沉积法形成所述参考层，采用氪气或氙气作为溅射气体制备紧邻所述绝缘势垒层的所述磁性层。
可选地，所述参考层的至少一个所述磁性层与所述自由层的至少一个所述磁性层均采用物理气相沉积法形成。
可选地，形成所述自由层的过程包括：采用物理气相沉积法在所述绝缘势垒层的表面上沉积第一磁性层，且采用氪气或氙气作为溅射气体；采用物理气相沉积法在所述第一磁性层的表面上沉积非磁耦合层，且采用氩气作为溅射气体；采用物理气相沉积法在所述非磁耦合层的表面上沉积第二磁性层，且采用氙气或氩气作为溅射气体。
可选地，在采用物理气相沉积法形成所述磁性层的过程中，沉积功率小于或者等于800W。
可选地，在形成所述参考层之前，所述方法还包括：形成底电极，所述参考层形成在所述底电极的表面上，在形成所述自由层之后，所述方法还包括在所述自由层的表面上依次形成覆盖层和顶电极。
可选地，所述参考层的材料包括Co、Fe、Ni、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、CoFePd、FePtPd、CoPtPd与CoFePtPd中的至少一种，所述自由层的材料包括Co、Fe、Ni、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、CoFePd、FePtPd、CoPtPd与CoFePtPd中的至少一种，所述绝缘势垒层的材料包括MgO、AlO X、MgAlO X、TiO X、TaO X、GaO X与FeO X中的至少一种。
可选地，所述结构过渡层的材料包括Ta、Mo、W、Ti、Hf、Zr、Nb、TaN、TiN、NbN、TaB、TiB、MoB、HfB、ZrB、NbN与WB中的至少一种。
根据本公开的另一方面，提供了一种MTJ，所述MTJ由任一种所述的方法制备而成。
应用本公开的技术方案，所述MTJ的制作方法使用物理气相沉积法并采用氙气和氪气中的至少一种作为溅射气体来制备所述参考层与所述自由层中的所述磁性层，在这一过程中，所述氙气和氪气作为载气被电磁场解离后轰击靶材，从而使得靶材中的原子沉积到所述绝缘势垒层，但是作为惰性气体，所述氙气和氪气的原子较重，难以被电磁场加速，因此可以有效的减小物理气相沉积过程中对所述参考层的界面以及所述绝缘势垒层与所述自由层的界面的轰击，避免了所述界面结构受到破坏，减少了所述界面处不同材料之间的扩散，进而提高所述参考层与所述自由层的自旋极化率和整体晶体(001)取向，达到降低器件的RA的同时，降低了器件的写入电压，从而提高了器件的耐擦写性能的效果。
附图说明
构成本公开的一部分的说明书附图用来提供对本公开的进一步理解，本公开的示意性实施例及其说明用于解释本公开，并不构成对本公开的不当限定。在附图中：
图1示出了根据本公开的一种具体的实施例的MTJ结构示意图；
图2示出了根据本公开的另一种具体的实施例的MTJ结构示意图。
其中，上述附图包括以下附图标记：
10、顶电极；20、覆盖层；30、自由层；40、绝缘势垒层；50、参考层；60、结构过渡层；70、人工反铁磁层；80、种子层；90、底电极；101、第一磁性层；102、第二磁性层；103、非磁耦合层。
具体实施方式
应该指出，以下详细说明都是例示性的，旨在对本公开提供进一步的说明。除非另有指明，本文使用的所有技术和科学术语具有与本公开所属技术领域的普通技术人员通常理解的相同含义。
需要注意的是，这里所使用的术语仅是为了描述具体实施方式，而非意图限制根据本公开的示例性实施方式。如在这里所使用的，除非上下文另外明确指出，否则单数形式也意图包括复数形式，此外，还应当理解的是，当在本说明书中使用术语“包含”和/或“包括”时，其指明存在特征、步骤、操作、器件、组件和/或它们的组合。
应该理解的是，当元件(诸如层、膜、区域、或衬底)描述为在另一元件“上”时，该元件可直接在该另一元件上，或者也可存在中间元件。而且，在说明书以及权利要求书中，当描述有元件“连接”至另一元件时，该元件可“直接连接”至该另一元件，或者通过第三 元件“连接”至该另一元件。
正如背景技术所介绍的，现有技术中的降低RA的方法的耐擦写性能较差，为了解决如上问题，本公开提出了一种MTJ的制作方法和MTJ。
本公开的一种典型的实施例中，提供了一种MTJ(Magnetic Tunnel Junctions，磁隧道结)的制作方法，MTJ的结构如图1所示，包括依次形成叠置的参考层50、绝缘势垒层40以及自由层30，其中，上述参考层与上述自由层中的至少一个磁性层，上述参考层与上述自由层的至少一个上述磁性层采用物理气相沉积法形成，且采用物理气相沉积形成至少一个上述磁性层的过程中，采用氙气和氪气中的至少一种作为溅射气体。
具体地，物理气相沉积法是在真空条件下，采用物理方法，将固体表面气化成气态原子、分子或者部分电离成离子，并通过低压气体过程，在基体表面沉积具有某种特殊功能的薄膜的技术。
通过上述MTJ的制作方法，使用物理气相沉积法并采用氙气和氪气中的至少一种作为溅射气体来制备上述参考层与上述自由层中的上述磁性层，在这一过程中，上述氙气和氪气作为载气被电磁场解离后轰击靶材，从而使得靶材中的原子沉积到上述绝缘势垒层，但是作为惰性气体，上述氙气和氪气的原子较重，难以被电磁场加速，因此可以有效的减小物理气相沉积过程中对上述参考层的界面以及上述绝缘势垒层与上述自由层的界面的轰击，避免了上述界面结构受到破坏，减少了上述界面处不同材料之间的扩散，进而提高上述参考层与上述自由层的自旋极化率和整体晶体(001)取向，达到降低器件的RA的同时，降低了器件的写入电压，从而提高了器件的耐擦写性能的效果。
本公开的一种具体的事实例中，在形成上述参考层之前，上述方法还包括：形成人工反铁磁层70，如图1所示。上述人工反铁磁层包括第一磁性复合层，反铁磁耦合层和第二磁性复合层。其中，上述第一磁性复合层和第二磁性复合层通过上述反铁磁耦合层呈反铁磁耦合，上述第一磁性复合层和上述第二磁性复合层的磁化方向相反，上述第一磁性复合层的磁化方向和上述第二磁性复合层的磁化方向与上述反铁磁耦合层的厚度方向相同；在上述人工反铁磁层的表面上形成结构过渡层60，上述结构过渡层为非晶结构层，上述参考层形成在上述结构过渡层的表面上。上述方法中，上述氙气和氪气被电磁场解离后轰击靶材，从而使得靶材中的原子沉积到上述MTJ下层结构上，上述下层结构为上述结构过渡层与上述绝缘势垒层，在这一过程中，上述氙气和氪气的原子较重，难以被电磁场加速，因此可以有效的减小物理气相沉积过程中对上述结构过渡层与上述参考层的界面以及上述绝缘势垒层与上述自由层的界面的轰击，从而减少了上述界面处不同材料之间的扩散，提高了上述参考层与上述自由层的自旋极化率和整体晶体(001)取向，进一步地降低了器件的RA，降低了器件的写入电压，提高了器件的耐擦写性能的效果。
本公开的一种实施例中，上述人工反铁磁层的表面上形成结构过渡层60，如图1所示。包括：采用物理气相沉积法在上述人工反铁磁层的表面上形成上述结构过渡层，且上述结构过渡层的沉积过程采用的溅射气体与上述参考层沉积过程中采用的溅射气体不同。沉积过程 采用不同的溅射气体，更有利于上述结构过渡层形成非晶结构，有利于后续生长的上述参考层、上述绝缘势垒层及上述自由层形成(001)晶体取向。
本公开的一种具体的实施例中，形成上述参考层的过程包括：采用物理气相沉积法形成上述参考层，且采用氪气或氙气作为溅射气体制备紧邻上述绝缘势垒层的上述磁性层。使用物理气相沉积法并采用氪气或氙气作为溅射气体来制备上述磁性层，氪气或氙气难以被电磁场加速，因此可以有效的减小物理气相沉积过程中对上述结构过渡层的轰击，从而较好的控制了上述结构过渡层和上述参考层界面的材料的扩散，避免了上述结构过渡层材料向上述绝缘势垒层的扩散，从而降低RA，进一步提高了器件的耐擦写性能。
根据本公开的另一种实施例，上述参考层的至少一个上述磁性层与上述自由层的至少一个上述磁性层均采用物理气相沉积法形成。这样进一步地保证了器件的耐擦写性能较好。
本公开的又一种实施例中，形成上述自由层的过程包括：采用物理气相沉积法在上述绝缘势垒层的表面上沉积第一磁性层101，如图2所示，且采用氪气或氙气作为溅射气体；采用物理气相沉积法在上述第一磁性层的表面上沉积非磁耦合层103，且采用氩气作为溅射气体；采用物理气相沉积法在上述非磁耦合层的表面上沉积第二磁性层102；且采用氙气或氩气作为溅射气体。使用物理气相沉积法，并采用氪气或氙气作为溅射气体来制备上述第一磁性层、采用氩气作为溅射气体来制备上述非磁耦合层以及采用氙气或氩气作为溅射气体来制备上述第二磁性层，在溅射过程中，上述溅射气体被电磁场解离，轰击磁性材料把菜，使得靶材中的原子沉积到上述过渡层或者绝缘势垒层，这一过程中，由于上述溅射气体的原子重量大，电磁场很难加速上述溅射气体，因此，可以有效的减小物理气相沉积过程中对上述第一磁性层、非磁耦合层以及第二磁性层界面的轰击，从而较好地提高了上述第一磁性层、非磁耦合层以及第二磁性层的自旋极化率与晶体取向，保证了器件的较好的耐擦写性能。
具体地，在采用物理气相沉积法形成上述磁性层的过程中，沉积功率小于或者等于800W。较小的沉积功率保证了上述参考层制备过程中缺陷较少，进一步保证器件的性能较好。
本公开的再一种实施例中，在形成上述参考层之前，上述方法还包括形成底电极90，如图1所示，上述参考层50形成在上述底电极90的表面上，在形成上述自由层30之后，上述方法还包括在上述自由层30的表面上依次形成覆盖层20和顶电极10。通过上述方法制成的上述MTJ结构，使得器件的耐擦写性能较好。
为了进一步保证降低器件的RA的同时，提升器件的耐擦写性能，本公开的另一种具体的实施例中，上述参考层的材料包括Co、Fe、Ni、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、CoFePd、FePtPd、CoPtPd与CoFePtPd中的至少一种，上述自由层的材料包括Co、Fe、Ni、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、CoFePd、FePtPd、CoPtPd与CoFePtPd中的至少一种，上述绝缘势垒层的材料包括MgO、AlO X、MgAlO X、TiO X、TaO X、GaO X与FeO X中的至少一种。其中，这些绝缘势垒层 中的材料化学式的“X”实际上就是一个对应分子中的氧原子的个数，这些化学式中的氧化子的个数虽然都用X表示，但是，其并不表示这些材料中的氧原子个数都相同。
本公开的一种具体的实施例中，上述结构过渡层的材料包括Ta、Mo、W、Ti、Hf、Zr、Nb、TaN、TiN、NbN、TaB、TiB、MoB、HfB、ZrB、NbN与WB中的至少一种。这样使得上述结构过渡层的制备过程中缺陷较少，保证形成的上述结构过渡层的性能较好，进一步保证了MTJ的性能较好。
本公开的另一种典型的实施例中，提供了一种MTJ，上述MTJ由上述任一种上述的方法制备而成。
使用上述的MTJ制作方法形成的上述MTJ，可有效降低器件的RA，提高参考层和自由层的自旋极化率，从而降低器件的写入电压，使器件具备较好的耐擦写性能。此外，使用任一种上述方法制备而成的MTJ可以在较厚的绝缘势垒层中实现低RA，提高了器件写入电压分布均一性，提高了器件良率。
为了使得本领域技术人员能够更加清楚地了解本公开的技术方案，以下将结合具体的实施例来说明。
实施例1
形成如图1所示的MTJ结构，具体形成过程包括：
在上述底电极90上使用物理气相沉积法依次沉积上述种子层80与上述人工反铁磁层70，上述人工反铁磁层70的材料可以为Co、Pt、Ru的一种或者几种的组合；
在上述人工反铁磁层70上制备结构过渡层60，上述结构过渡层60材料可以为Ta；
在上述结构过渡层60上，采用氪气作为溅射气体制备参考层50，上述参考层50的材料可以为CoFeB；
在上述参考层50上制备绝缘势垒层40，上述绝缘势垒层40的材料可以为MgO；
在上述绝缘势垒层40上制备自由层30，上述自由层30的材料可以为CoFeB、Ta或者CoFeB；在上述自由层30上制备覆盖层20，上述覆盖层20的材料可以为MgO；
在上述覆盖层20上制备顶电极10。
当然，上述制备参考层50的溅射气体还可以为氙气，上述参考层50的材料还可以为Co、Fe、Ni、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、CoFePd、FePtPd、CoPtPd与CoFePtPd中的一种或者几种的组合，上述自由层30的材料还可以为Co、Fe、Ni、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、CoFePd、FePtPd、CoPtPd与CoFePtPd中的一种或者几种的组合，上述绝缘势垒层40的材料还可以为AlO X、MgAlO X、TiO X、TaO X、GaO X与FeO X中的一种或者几种的组合，上述结构过渡层60还可以为Mo、W、 Ti、Hf、Zr、Nb、TaN、TiN、NbN、TaB、TiB、MoB、HfB、ZrB、NbN与WB中的一种或者几种的组合。
实施例2
形成如图2所示的MTJ结构，具体形成过程包括：
在底电极90上依次沉积上述人工反铁磁层70、上述结构过渡层60、上述参考层50以及上述绝缘势垒层40，采用氪气作为溅射气体制备紧邻上述绝缘势垒层40的第一磁性层101，采用氩气作为溅射气体在上述第一磁性层101上沉积上述非磁耦合层103，采用氙气作为溅射气体在上述非磁耦合层103上沉积上述第二磁性层102，在上述第二磁性层102上沉积上述覆盖层20及上述顶电极10。
实施例3
形成如图2所示的MTJ结构，具体形成过程包括：
在底电极90上依次沉积上述人工反铁磁层70、上述结构过渡层60、上述参考层50以及上述绝缘势垒层40，采用氙气作为溅射气体制备紧邻上述绝缘势垒层40的第一磁性层101，采用氩气作为溅射气体在上述第一磁性层101上沉积上述非磁耦合层103，采用氩气作为溅射气体在上述非磁耦合层103上沉积上述第二磁性层102，在上述第二磁性层102上沉积上述覆盖层20及上述顶电极10。
从以上的描述中，可以看出，本公开上述的实施例实现了如下技术效果：
1)、本公开的MTJ的制作方法使用物理气相沉积法并采用氙气和氪气中的至少一种作为溅射气体来制备上述参考层与上述自由层中的上述磁性层，在这一过程中，上述氙气和氪气作为载气被电磁场解离后轰击靶材，从而使得靶材中的原子沉积到上述绝缘势垒层，但是作为惰性气体，上述氙气和氪气的原子较重，难以被电磁场加速，因此可以有效的减小物理气相沉积过程中对上述参考层的界面以及上述绝缘势垒层与上述自由层的界面的轰击，避免了上述界面结构受到破坏，减少了上述界面处不同材料之间的扩散，进而提高上述参考层与上述自由层的自旋极化率和整体晶体(001)取向，达到降低器件的RA的同时，降低了器件的写入电压，从而提高了器件的耐擦写性能的效果。
2)、本公开的MTJ，使用上述MTJ制作方法制备而成，可有效降低器件的RA，提高参考层和自由层的自旋极化率，从而降低器件的写入电压，使器件具备较好的耐擦写性能。此外，使用上述方法制备而成的MTJ可以在较厚的绝缘势垒层中实现低RA，提高了器件写入电压分布均一性，提高了器件良率。
以上所述仅为本公开的优选实施例而已，并不用于限制本公开，对于本领域的技术人员来说，本公开可以有各种更改和变化。凡在本公开的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (11)

  1. 一种MTJ的制作方法，其特征在于，包括依次形成叠置的参考层、绝缘势垒层以及自由层，其中，所述参考层与所述自由层均包含至少一个磁性层，所述参考层与所述自由层的至少一个所述磁性层采用物理气相沉积法形成，且采用物理气相沉积形成至少一个所述磁性层的过程中，采用氙气和氪气中的至少一种作为溅射气体。
  2. 根据权利要求1所述的方法，其特征在于，在形成所述参考层之前，所述方法还包括：
    形成人工反铁磁层，所述人工反铁磁层包括第一磁性复合层，反铁磁耦合层和第二磁性复合层，其中，所述第一磁性复合层和第二磁性复合层通过所述反铁磁耦合层呈反铁磁耦合，所述第一磁性复合层和所述第二磁性复合层的磁化方向相反，所述第一磁性复合层的磁化方向和所述第二磁性复合层的磁化方向与所述反铁磁耦合层的厚度方向相同；
    在所述人工反铁磁层的表面上形成结构过渡层，所述结构过渡层为非晶结构层，所述参考层形成在所述结构过渡层的表面上。
  3. 根据权利要求2所述的方法，其特征在于，所述人工反铁磁层的表面上形成结构过渡层，包括：
    采用物理气相沉积法在所述人工反铁磁层的表面上形成所述结构过渡层，且所述结构过渡层的沉积过程采用的溅射气体与所述参考层沉积过程中采用的溅射气体不同。
  4. 根据权利要求1所述的方法，其特征在于，形成所述参考层的过程包括：
    采用物理气相沉积法形成所述参考层，采用氪气或氙气作为溅射气体制备紧邻所述绝缘势垒层的所述磁性层。
  5. 根据权利要求1所述的方法，其特征在于，所述参考层的至少一个所述磁性层与所述自由层的至少一个所述磁性层均采用物理气相沉积法形成。
  6. 根据权利要求1所述的方法，其特征在于，形成所述自由层的过程包括：
    采用物理气相沉积法在所述绝缘势垒层的表面上沉积第一磁性层，且采用氪气或氙气作为溅射气体；
    采用物理气相沉积法在所述第一磁性层的表面上沉积非磁耦合层，且采用氩气作为溅射气体；
    采用物理气相沉积法在所述非磁耦合层的表面上沉积第二磁性层，且采用氙气或氩气作为溅射气体。
  7. 根据权利要求1所述的方法，其特征在于，在采用物理气相沉积法形成所述磁性层的过程中，沉积功率小于或者等于800W。
  8. 根据权利要求1所述的方法，其特征在于，
    在形成所述参考层之前，所述方法还包括：
    形成底电极，所述参考层形成在所述底电极的表面上，
    在形成所述自由层之后，所述方法还包括：
    在所述自由层的表面上依次形成覆盖层和顶电极。
  9. 根据权利要求1至8中任意一种所述的方法，其特征在于，所述参考层的材料包括Co、Fe、Ni、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、CoFePd、FePtPd、CoPtPd与CoFePtPd中的至少一种，所述自由层的材料包括Co、Fe、Ni、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、CoFePd、FePtPd、CoPtPd与CoFePtPd中的至少一种，所述绝缘势垒层的材料包括MgO、AlO X、MgAlO X、TiO X、TaO X、GaO X与FeO X中的至少一种。
  10. 根据权利要求1至8中任意一种所述的方法，其特征在于，所述结构过渡层的材料包括Ta、Mo、W、Ti、Hf、Zr、Nb、TaN、TiN、NbN、TaB、TiB、MoB、HfB、ZrB、NbN与WB中的至少一种。
  11. 一种MTJ，其特征在于，所述MTJ由权利要求1至10中任一项所述的方法制备而成。
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