WO2022044580A1 - Circuit haute-fréquence et dispositif de communication - Google Patents

Circuit haute-fréquence et dispositif de communication Download PDF

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Publication number
WO2022044580A1
WO2022044580A1 PCT/JP2021/026126 JP2021026126W WO2022044580A1 WO 2022044580 A1 WO2022044580 A1 WO 2022044580A1 JP 2021026126 W JP2021026126 W JP 2021026126W WO 2022044580 A1 WO2022044580 A1 WO 2022044580A1
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WIPO (PCT)
Prior art keywords
filter
band
communication band
high frequency
circuit
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PCT/JP2021/026126
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English (en)
Japanese (ja)
Inventor
弘嗣 森
純一 吉岡
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株式会社村田製作所
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Publication of WO2022044580A1 publication Critical patent/WO2022044580A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/12—Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/401—Circuits for selecting or indicating operating mode

Definitions

  • the present invention relates to a high frequency circuit and a communication device.
  • 5G NR 5th Generation New Radio
  • 5G NR 5th Generation New Radio
  • the channel width tends to increase in the NR-compatible communication band specified by 3GPP (3rd Generation Partnership Project).
  • 3GPP 3rd Generation Partnership Project
  • signal quality such as EVM (Error Vector Magnitude) deteriorates.
  • an object of the present invention is to provide a high frequency circuit and a communication device in which deterioration of signal quality due to an increase in channel width is suppressed.
  • the high frequency circuit includes an antenna terminal, a first filter having a variable pass band, and a surface-mounted first impedance element connected between the antenna terminal and the first filter.
  • the first mode of transmitting the signal of the first communication band the first channel signal of the first communication band is transmitted, and in the second mode of transmitting the signal of the second communication band, the bandwidth is wider than that of the first channel signal.
  • a narrow second channel signal is transmitted, at least one of the first communication band and the second communication band is a communication band for 5 GNR, and the pass band of the first filter is the first in the case of the first mode. It becomes a pass band, and in the case of the second mode, it becomes a second pass band having a wider band than the first pass band.
  • the present invention it is possible to provide a high frequency circuit and a communication device in which deterioration of signal quality due to an increase in channel width is suppressed.
  • FIG. 1 is a circuit configuration diagram of a high frequency circuit according to the first embodiment.
  • FIG. 2 is a diagram showing the frequency relationship of the communication band.
  • FIG. 3A is a diagram showing a first example of the relationship between the communication band and the channel signal.
  • FIG. 3B is a diagram showing a second example of the relationship between the communication band and the channel signal.
  • FIG. 4A is a diagram showing a first circuit configuration example of the first filter according to the first embodiment.
  • FIG. 4B is a diagram showing a second circuit configuration example of the first filter according to the first embodiment.
  • FIG. 4C is a diagram showing a third circuit configuration example of the first filter according to the first embodiment.
  • FIG. 4D is a diagram showing a fourth circuit configuration example of the first filter according to the first embodiment.
  • FIG. 4A is a diagram showing a first circuit configuration example of the first filter according to the first embodiment.
  • FIG. 4B is a diagram showing a second circuit configuration example of the first filter according to the first embodiment
  • FIG. 5 is a circuit configuration diagram of the high frequency circuit and the communication device according to the second embodiment.
  • FIG. 6 is a circuit configuration diagram of the high frequency circuit according to the first modification of the second embodiment.
  • FIG. 7 is a circuit configuration diagram of a high frequency circuit according to the second modification of the second embodiment.
  • FIG. 8 is a circuit configuration diagram of a high frequency circuit according to a modification 3 of the second embodiment.
  • each figure is a schematic diagram in which emphasis, omission, or ratio is adjusted as appropriate to show the present invention, and is not necessarily exactly illustrated. What is the actual shape, positional relationship, and ratio? May be different. In each figure, substantially the same configuration is designated by the same reference numeral, and duplicate description may be omitted or simplified.
  • connection means not only the case of being directly connected by a connection terminal and / or a wiring conductor, but also the case of being electrically connected via another circuit element.
  • connected between A and B means being connected to A and B on the route connecting A and B.
  • FIG. 1 is a circuit configuration diagram of the high frequency circuit 1a according to the first embodiment.
  • the high frequency circuit 1a according to the present embodiment includes an antenna terminal 101, a filter 10, and a matching circuit 12.
  • the antenna terminal 101 is a terminal connected to the antenna.
  • the matching circuit 12 is a circuit for impedance matching between the antenna terminal 101 and the antenna and the filter 10.
  • the matching circuit 12 includes at least one surface mount type first impedance element.
  • the filter 10 is an example of the first filter, and is a filter circuit having a variable pass band.
  • the filter 10 has input / output terminals 102 and 103, and the input / output terminals 102 are connected to the matching circuit 12.
  • the pass band of the filter 10 changes into a first pass band and a second pass band.
  • the first pass band includes, for example, the uplink operation band of the first communication band
  • the second pass band includes, for example, the uplink operation band of the second communication band.
  • the filter 10 is, for example, an elastic surface wave (SAW: Surface Acoustic Wave) filter, an elastic wave filter using a bulk elastic wave (BAW: Bulk Acoustic Wave), an LC resonance filter using an inductor and a capacitor, an elastic wave resonator, and the like. It may be a hybrid filter using an inductor and a capacitor, or a dielectric filter, and is not limited thereto.
  • SAW Surface Acoustic Wave
  • BAW Bulk Acoustic Wave
  • LC resonance filter using an inductor and a capacitor an elastic wave resonator, and the like.
  • It may be a hybrid filter using an inductor and a capacitor, or a dielectric filter, and is not limited thereto.
  • each of the first communication band and the second communication band is a standardization organization or the like (for example, 3GPP, IEEE (Institute of Electrical and Electronics Engineers)) for a communication system constructed by using wireless access technology (RAT: RadioAccess Technology). Electronics Engineers) etc.) means a frequency band defined in advance.
  • RAT RadioAccess Technology
  • Electronics Engineers etc.
  • the communication system for example, an LTE (Longterm Evolution) system, a 5GNR system, a WLAN (Wireless Local Area Network) system, or the like can be used, but the communication system is not limited thereto.
  • each of the first communication band and the second communication band is composed of a downlink operation band and an uplink operation band.
  • the uplink operating band means the frequency range specified for the uplink in the communication band.
  • the downlink operation band means a frequency range designated for the downlink in the communication band.
  • FIG. 2 is a diagram showing the frequency relationship of the communication band.
  • the first communication band is, for example, n1 for 5G NR for frequency division duplex (FDD)
  • the uplink operation band is 1920-1980 MHz
  • the downlink operation is 2110-2170 MHz.
  • the second communication band is, for example, n65 for 5G NR for FDD
  • the uplink operating band is 1920-2010 MHz
  • the downlink operating band is 2110-2200 MHz.
  • the second communication band (n65) has at least a partial overlap in frequency with the first communication band (n1), and is wider than the first communication band.
  • n34 (2010-2025MHz) for 5G NR for Time Division Duplex (TDD) is located close to the high frequency side of the second communication band (n65) and the first communication band (n1). is doing.
  • FIG. 3A is a diagram showing a first example of the relationship between the communication band and the channel signal.
  • the channel signal (first channel signal) of the first communication band (n1) has a wider bandwidth than the channel signal (second channel signal) of the second communication band (n65). That is, the first communication band has a narrower bandwidth than the second communication band, but the first channel signal has a wider bandwidth than the second channel signal.
  • the bandwidth of the first channel signal of the first communication band (n1) is, for example, 50 MHz
  • the bandwidth of the second channel signal of the second communication band (n65) is, for example, 25 MHz.
  • the mode for transmitting the first channel signal is defined as the first mode
  • the mode for transmitting the second channel signal having a narrower bandwidth than the first channel signal is defined as the second mode.
  • the pass band of the filter 10 is, as shown in FIG. 3A, the first pass band in the case of the first mode. In the case of the second mode, the second pass band is wider than the first pass band.
  • the second communication band does not have to be wider than the first communication band. Further, the first communication band and the second communication band may be the same communication band. Even in this case, the pass band of the filter 10 is the first pass band in the case of the first mode, and is the second pass band wider than the first pass band in the case of the second mode.
  • the bandwidth of the channel signal tends to increase in the NR-compatible communication band specified by 3GPP.
  • the bandwidth of the channel signal increases, it becomes difficult to secure the attenuation characteristic (suppress unnecessary radiation) of the adjacent communication band (for example, n34), and there is a concern that the signal quality of EVM or the like deteriorates. ..
  • the pass band of the filter 10 in the first mode in which the signal of the first communication band is transmitted, the pass band of the filter 10 is narrowed to obtain the pass band of the filter 10 and the first mode. Since a large frequency interval with a communication band close to one communication band can be secured, it is possible to secure the attenuation characteristic of the communication band close to the first communication band (suppress unnecessary radiation). Further, as a countermeasure against the transmission loss increased by making the filter 10 variable, a high Q surface mount impedance element is arranged as a matching circuit. As a result, the signals of the first communication band and the second communication band can be transmitted with low loss, so that the strict EVM standard at 5 GNR can be satisfied.
  • At least one of the first communication band and the second communication band to which the high frequency circuit 1a according to the present embodiment is applied may be a communication band for 5G NR, and one of them is for LTE. It may be a communication band.
  • the first impedance element included in the matching circuit 12 may be an integrated passive element (IPD: Integrated Passive Device). According to this, the matching circuit 12 and the high frequency circuit 1a can be miniaturized.
  • IPD integrated Passive Device
  • the matching circuit 12 may have one or more series arm elements connected in series to the path connecting the antenna terminal 101 and the filter 10. At this time, it is desirable that all the series arm elements connected in series to the above path are surface mount type impedance elements. According to this, the transmission loss of the matching circuit 12 and the high frequency circuit 1a can be further reduced.
  • the matching circuit 12 may have a plurality of series arm elements connected in series to the path connecting the antenna terminal 101 and the filter 10. At this time, it is desirable that the series arm element closest to the antenna terminal 101 among the plurality of series arm elements is a surface mount type impedance element.
  • the reflection coefficient in the first communication band and the second communication band of the filter is further connected. Therefore, the transmission loss of the high frequency circuit 1a including the filter can be reduced.
  • the frequency end on the low frequency side of the first communication band does not have to coincide with the frequency end on the low frequency side of the second communication band.
  • the frequency end on the high frequency side of the first communication band does not have to coincide with the frequency end on the high frequency side of the second communication band.
  • the frequency range of the first communication band may be included in the frequency range of the second communication band.
  • the frequency bands on the high frequency side of the first pass band and the second pass band are variable, but when the proximity band is located on the low frequency side of the filter 10, the first pass band is used.
  • the frequency band on the low frequency side of the pass band and the second pass band may be varied.
  • the frequency bands on the low frequency side and the high frequency side of the first pass band and the second pass band may be varied.
  • one of the low frequency side frequency end and the high frequency side frequency end of the first pass band, and the low frequency side frequency end and the high frequency side frequency of the second pass band may match one of the ends.
  • FIG. 3B is a diagram showing a second example of the relationship between the communication band and the channel signal.
  • the first communication band is n48 or n49 for 5G NR for TDD and the operating band is 3.55-3.7GHz.
  • the second communication band is n77 for 5G NR for TDD, and the operating band is 3.45-3.55GHz and 3.7-3.98GHz.
  • the second communication band of this example is 3.45-3.55 GHz, which is the frequency range on the low frequency side, and the high frequency side, out of 3.3-4.2 GHz, which is the normal operation band of n77 for 5 GNR. It is composed of 3.7-3.98 GHz, which is a frequency range.
  • the channel signal (first channel signal) of the first communication band (n48 or n49) has a wider bandwidth than the channel signal (second channel signal) of the second communication band n77. That is, the first communication band has a narrower bandwidth than the second communication band, but the first channel signal has a wider bandwidth than the second channel signal.
  • the bandwidth of the first channel signal of the first communication band (n48) is, for example, 100 MHz
  • the bandwidth of the second channel signal of the second communication band (n77) is, for example, 40 MHz.
  • the pass band of the filter 10 is, as shown in FIG. 3B, the first pass band in the case of the first mode. In the case of the second mode, the second pass band is wider than the first pass band.
  • the bandwidth of the channel signal tends to increase in the NR-compatible communication band specified by 3GPP.
  • the bandwidth of the channel signal increases, it becomes difficult to secure the attenuation characteristics (suppress unnecessary radiation) of the adjacent communication band (n77) for the n48 or n49 signal, and the signal quality such as EVM deteriorates. There is concern about doing so.
  • the pass band of the filter 10 in the first mode in which the signal of the first communication band is transmitted, the pass band of the filter 10 is narrowed so as to be close to the first communication band. It is possible to secure the attenuation characteristic of the second communication band (suppress unnecessary radiation). Further, as a countermeasure against the transmission loss increased by making the filter 10 variable, a high Q surface mount impedance element is arranged as a matching circuit. As a result, the signals of the first communication band and the second communication band can be transmitted with low loss, so that the strict EVM standard at 5 GNR can be satisfied.
  • FIG. 4A is a diagram showing a first circuit configuration example of the filter 10 according to the first embodiment.
  • the filter 10A includes circuit elements 18 and 19, elastic wave resonator 13, resonance circuit 14, and switch 15.
  • circuit elements 18 and 19 are arranged in the series arm path connecting the input / output terminal 102 and the input / output terminal 103, respectively.
  • Circuit elements 18 and 19 are, for example, any of inductors, capacitors, and elastic wave resonators.
  • the inductors and capacitors of the circuit elements 18 and 19 may be composed of any of surface mount components, substrate inner layer wiring, and substrate wiring.
  • the elastic wave resonator 13 may be either a SAW resonator or a BAW resonator.
  • the resonant circuit 14 includes, for example, an inductor, a capacitor, and at least one elastic wave resonator, and is either an LC series resonant circuit, an LC parallel resonant circuit, or an elastic wave resonant circuit.
  • a series connection circuit of the switch 15 and the resonance circuit 14 and the elastic wave resonator 13 is arranged in the parallel arm path connecting the series arm path and the ground.
  • the pass band of the filter 10A changes into a first pass band and a second pass band by switching between conduction and non-conduction of the switch 15.
  • FIG. 4B is a diagram showing a second circuit configuration example of the filter 10 according to the first embodiment.
  • the filter 10B includes circuit elements 18 and 19, elastic wave resonator 13, resonance circuit 14, and switch 15.
  • the filter 10B differs from the filter 10A only in the connection configuration of the circuits arranged in the parallel arm path.
  • the filter 10B will be described focusing on the differences from the filter 10A.
  • a parallel connection circuit of the switch 15 and the resonance circuit 14 and the elastic wave resonator 13 is arranged in the parallel arm path connecting the series arm path and the ground.
  • the pass band of the filter 10B changes into a first pass band and a second pass band by switching between conduction and non-conduction of the switch 15.
  • the switch 15 and at least one of the circuit elements other than the switch 15 may be formed in the same package.
  • FIG. 4C is a diagram showing a third circuit configuration example of the filter 10 according to the first embodiment.
  • the filter 10C includes circuit elements 18 and 19, elastic wave resonator 13, and variable circuit 16.
  • the filter 10C differs from the filter 10A only in the configuration of the circuit arranged in the parallel arm path.
  • the filter 10C will be described focusing on the differences from the filter 10A.
  • the variable circuit 16 has, for example, at least one of a variable inductor, a variable capacitor, and a switch, and is a circuit that changes physical constants such as capacitance and inductance.
  • the variable circuit 16 is arranged in the first parallel arm path connecting the series arm path and the ground.
  • the variable capacitor may be, for example, a DTC (Digital Tunable Capacitor).
  • the elastic wave resonator 13 is arranged in the second parallel arm path connecting the series arm path and the ground.
  • the pass band of the filter 10C changes into a first pass band and a second pass band due to a change in the physical constant of the variable circuit 16.
  • FIG. 4D is a diagram showing a fourth circuit configuration example of the filter 10 according to the first embodiment.
  • the filter 10D includes filters 11a and 11b, and a first switch and a second switch.
  • the filter 11a is a filter element having a second pass band including an uplink operation band (for example, n65Tx) of the second communication band.
  • the filter 11b is a filter element having a first pass band including an uplink operation band (for example, n1Tx) of the first communication band.
  • the first switch has a common terminal and two selection terminals, the common terminal is connected to the input / output terminal 102, one selection terminal is connected to the filter 11a, and the other selection terminal is connected to the filter 11b.
  • the second switch has a common terminal and two selection terminals, the common terminal is connected to the input / output terminal 103, one selection terminal is connected to the filter 11a, and the other selection terminal is connected to the filter 11b. ..
  • the pass band of the filter 10D changes into a first pass band and a second pass band when the first switch and the second switch are switched in synchronization.
  • the duplexer is composed of a transmission filter having a pass band including the uplink operation band of the second communication band and a reception filter having a pass band including the downlink operation band of the second communication band. It may be arranged between the first switch and the second switch.
  • a duplexer composed of a transmission filter having a pass band including the uplink operation band of the first communication band and a reception filter having a pass band including the downlink operation band of the first communication band is provided. It may be arranged between the first switch and the second switch.
  • FIG. 5 is a circuit configuration diagram of the high frequency circuit 1 and the communication device 5 according to the second embodiment.
  • the communication device 5 includes a high frequency circuit 1, an antenna 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4. ..
  • the high frequency circuit 1 transmits a high frequency signal between the antenna 2 and the RFIC 3.
  • the detailed circuit configuration of the high frequency circuit 1 will be described later.
  • the antenna 2 is connected to the antenna connection terminal 100 of the high frequency circuit 1, transmits a high frequency signal output from the high frequency circuit 1, and also receives a high frequency signal from the outside and outputs the high frequency signal to the high frequency circuit 1.
  • RFIC3 is an example of a signal processing circuit that processes high frequency signals. Specifically, the RFIC 3 processes the high frequency reception signal input via the reception path of the high frequency circuit 1 by down-conversion or the like, and outputs the reception signal generated by the signal processing to the BBIC 4. Further, the RFIC 3 processes the transmission signal input from the BBIC 4 by up-conversion or the like, and outputs the high frequency transmission signal generated by the signal processing to the transmission path of the high frequency circuit 1. Further, the RFIC 3 has a control unit for controlling a switch, an amplifier and the like included in the high frequency circuit 1. A part or all of the function of the RFIC3 as a control unit may be mounted outside the RFIC3, or may be mounted on, for example, the BBIC4 or the high frequency circuit 1.
  • the BBIC 4 is a baseband signal processing circuit that processes signals using an intermediate frequency band having a lower frequency than the high frequency signal transmitted by the high frequency circuit 1.
  • the signal processed by the BBIC 4 for example, an image signal for displaying an image and / or an audio signal for a call via a speaker are used.
  • the antenna 2 and the BBIC 4 are not essential components.
  • the high frequency circuit 1 includes an antenna connection terminal 100, filters 10 and 20, a matching circuit 22, a switch 50, and input / output terminals 110 and 120.
  • the antenna connection terminal 100 is connected to the antenna 2.
  • the input / output terminals 110 and 120 are terminals for receiving a high frequency transmission signal from the outside of the high frequency circuit 1 or providing a high frequency reception signal to the outside of the high frequency circuit 1.
  • the filter 10 is an example of the first filter, and is a filter circuit having a variable pass band.
  • One terminal of the filter 10 is connected to the selection terminal 50b of the switch 50 without an impedance element, and the other terminal of the filter 10 is connected to the input / output terminal 110.
  • the pass band of the filter 10 changes into a first pass band and a second pass band.
  • the first pass band includes, for example, the uplink operation band of the first communication band
  • the second pass band includes, for example, the uplink operation band of the second communication band.
  • the filter 20 is an example of the second filter, and is a filter circuit in which the pass band is not variable.
  • One terminal of the filter 20 is connected to the matching circuit 22, and the other terminal of the filter 20 is connected to the input / output terminal 120.
  • Each of the filters 10 and 20 is, for example, an elastic surface wave filter, an elastic wave filter using a BAW, an LC resonance filter using an inductor and a capacitor, a surface acoustic wave resonator, a hybrid filter using an inductor and a capacitor, and a dielectric filter. It may be any of, and further, it is not limited to these.
  • the matching circuit 22 is a circuit connected between the selection terminal 50c of the switch 50 and the filter 20 to achieve impedance matching between the switch 50 and the antenna 2 and the filter 20.
  • the matching circuit 22 includes at least one second impedance element.
  • the switch 50 is an example of an antenna switch, and has a common terminal 50a, a selection terminal 50b, and a 50c.
  • the common terminal 50a is connected to the antenna connection terminal 100.
  • the selection terminal 50b is an example of the first antenna terminal, and is connected to the filter 10 without an impedance element.
  • the selection terminal 50c is an example of the second antenna terminal, and is connected to the filter 20 via the matching circuit 22.
  • the switch 50 switches between connection and non-connection between the common terminal 50a and the selection terminal 50b based on, for example, a control signal from RFIC3, and also connects and does not connect the common terminal 50a and the selection terminal 50c. Can be switched.
  • the high frequency circuit 1 does not have to have the switch 50, and the filters 10 and 20 may be directly connected to the antenna connection terminal 100.
  • the high frequency circuit 1 includes a power amplifier or a low noise amplifier connected between the filter 10 and the input / output terminal 110, and a power amplifier or a low noise amplifier connected between the filter 20 and the input / output terminal 120. May be provided.
  • the first communication band is, for example, n1 for 5G NR for FDD
  • the second communication band is, for example, for example. N65 for 5G NR for FDD.
  • the pass band of the filter 20 includes, for example, n34 (2010-2025 MHz) or n39 (1880-1920 MHz) for 5 GNR.
  • the second communication band (n65) has at least a partial overlap in frequency with the first communication band (n1), and is wider than the first communication band.
  • n34 for 5G NR is located close to the high frequency side of the second communication band (n65) and the first communication band (n1).
  • the channel signal (first channel signal) of the first communication band (n1) has a wider bandwidth than the channel signal (second channel signal) of the second communication band (n65). That is, the first communication band has a narrower bandwidth than the second communication band, but the first channel signal has a wider bandwidth than the second channel signal.
  • the pass band of the filter 10 is a first communication band for transmitting the signal of the first communication band as shown in FIG. 3A.
  • the first pass band is used, and in the case of the second mode in which the signal of the second communication band is transmitted, the second pass band is wider than the first pass band.
  • the pass band of the filter 10 and the first mode are narrowed by narrowing the pass band of the filter 10. Since a large frequency interval with a communication band close to one communication band can be secured, it is possible to secure the attenuation characteristic of the communication band close to the first communication band (suppress unnecessary radiation). Further, as a countermeasure against the transmission loss increased by making the filter 10 variable, an impedance element is not arranged between the switch 50 and the filter 10. As a result, the signals of the first communication band and the second communication band can be transmitted with low loss, so that the strict EVM standard at 5 GNR can be satisfied.
  • At least one of the first communication band and the second communication band to which the high frequency circuit 1 according to the present embodiment is applied may be a communication band for 5G NR, and one of them is for 4GLTE. It may be a communication band.
  • FIG. 6 is a circuit configuration diagram of the high frequency circuit 1A according to the first modification of the second embodiment.
  • the high frequency circuit 1A includes an antenna connection terminal 100, filters 10 and 20, matching circuits 12 and 22, a switch 50, and input / output terminals 110 and 120.
  • the high frequency circuit 1A according to this modification is different from the high frequency circuit 1 according to the second embodiment in that a matching circuit 12 is added.
  • the high-frequency circuit 1A according to the present modification will be described by omitting the description of the same configuration as the high-frequency circuit 1 according to the second embodiment and focusing on different points.
  • the matching circuit 12 is a circuit connected between the selection terminal 50b and the filter 10 to achieve impedance matching between the switch 50 and the antenna 2 and the filter 10.
  • the matching circuit 12 includes at least one surface mount type first impedance element.
  • the matching circuit 22 is a circuit connected between the selection terminal 50c and the filter 20 to achieve impedance matching between the switch 50 and the antenna 2 and the filter 20.
  • the matching circuit 22 includes at least one second impedance element. Further, the matching circuit 22 does not include a surface mount type impedance element, and the Q value of the matching circuit 22 is smaller than the Q value of the matching circuit 12.
  • the pass band of the filter 10 in the first mode of transmitting the signal of the first communication band, the pass band of the filter 10 is narrowed, so that the communication close to the pass band of the filter 10 and the first communication band is performed. Since a large frequency interval with the band can be secured, it is possible to secure the attenuation characteristic of the communication band close to the first communication band (suppress unnecessary radiation). Further, as a countermeasure against the transmission loss increased by making the filter 10 variable, a matching circuit 12 having a relatively high Q value is arranged between the switch 50 and the filter 10. As a result, the signals of the first communication band and the second communication band can be transmitted with low loss, so that the strict EVM standard at 5 GNR can be satisfied.
  • FIG. 7 is a circuit configuration diagram of the high frequency circuit 1B according to the second modification of the second embodiment.
  • the high frequency circuit 1B includes an antenna connection terminal 100, filters 10, 20 and 30, matching circuits 22 and 32, a switch 50, and input / output terminals 110, 120 and 130.
  • the high frequency circuit 1B according to this modification is different from the high frequency circuit 1 according to the second embodiment in that a filter 30 and a matching circuit 32 are added.
  • the high-frequency circuit 1B according to the present modification will be described by omitting the description of the same configuration as the high-frequency circuit 1 according to the second embodiment and focusing on different points.
  • the input / output terminal 130 is a terminal for receiving a high frequency transmission signal from the outside of the high frequency circuit 1B or providing a high frequency reception signal to the outside of the high frequency circuit 1B.
  • the filter 30 is an example of a third filter, and is a filter circuit in which the pass band is not variable. One terminal of the filter 30 is connected to the matching circuit 32.
  • the filter 30 is, for example, any of an elastic surface wave filter, an elastic wave filter using a BAW, an LC resonance filter using an inductor and a capacitor, an elastic wave resonator, a hybrid filter using an inductor and a capacitor, and a dielectric filter. It may, and is not limited to, these.
  • the matching circuit 32 is a circuit connected between the selection terminal 50b and the filter 30 to achieve impedance matching between the switch 50 and the antenna 2 and the filter 30.
  • the matching circuit 32 includes at least one third impedance element.
  • the pass band of the filter 30 includes, for example, n3 for 5G NR (see FIG. 2).
  • the third impedance element is connected between the selection terminal 50b and the filter 30, whereas the impedance element is arranged between the selection terminal 50b and the filter 10. Therefore, the EVM standard of the signals of the first communication band and the second communication band passing through the filter 10 can be satisfied.
  • FIG. 8 is a circuit configuration diagram of the high frequency circuit 1C according to the third modification of the second embodiment.
  • the high frequency circuit 1C includes an antenna connection terminal 100, filters 10, 20 and 30, matching circuits 22 and 32, a switch 51, and input / output terminals 110, 120 and 130.
  • the high frequency circuit 1C according to the present modification has a different configuration of the switch 51 as compared with the high frequency circuit 1B according to the modification 2.
  • the same configuration as the high frequency circuit 1B according to the modification 3 will be omitted from the description of the high frequency circuit 1C according to the modification, and the differences will be mainly described.
  • the switch 51 is an example of an antenna switch and has a common terminal 51a and selection terminals 51b, 51c and 51d.
  • the common terminal 51a is connected to the antenna connection terminal 100.
  • the selection terminal 51b is an example of the first antenna terminal, and is connected to the filter 10 without an impedance element.
  • the selection terminal 51c is an example of the second antenna terminal, and is connected to the filter 20 via the matching circuit 22.
  • the selection terminal 51d is connected to the filter 30 via the matching circuit 32.
  • the switch 51 switches between connection and non-connection between the common terminal 51a and the selection terminal 51b based on, for example, a control signal from RFIC3, and also connects and does not connect the common terminal 51a and the selection terminal 51c. Can be switched, and connection and non-connection between the common terminal 51a and the selection terminal 51d can be switched.
  • the third impedance element is connected between the selection terminal 51d and the filter 30, whereas the impedance element is arranged between the selection terminal 51b and the filter 10. Therefore, the EVM standard of the signals of the first communication band and the second communication band passing through the filter 10 can be satisfied.
  • the antenna terminal 101, the filter 10 having a variable pass band, and the surface-mounted first impedance connected between the antenna terminal 101 and the filter 10 In the first mode in which the element and the signal of the first communication band are transmitted, the first channel signal of the first communication band is transmitted, and in the second mode of transmitting the signal of the second communication band, the first channel is transmitted.
  • a second channel signal having a narrower bandwidth than the signal is transmitted, at least one of the first communication band and the second communication band is a communication band for 5 GNR, and the pass band of the filter 10 is the case of the first mode. Is the first pass band, and in the case of the second mode, the second pass band is wider than the first pass band.
  • the pass band of the filter 10 is narrowed to reduce the frequency interval between the pass band of the filter 10 and the communication band close to the first communication band. Since a large amount can be secured, it is possible to secure the attenuation characteristic of the communication band close to the first communication band (suppress unnecessary radiation). Further, as a countermeasure against the transmission loss increased by making the filter 10 variable, a high Q surface mount impedance element is arranged as a matching circuit. As a result, the signals of the first communication band and the second communication band can be transmitted with low loss, so that the strict EVM standard at 5 GNR can be satisfied.
  • the first impedance element may be an integrated passive element.
  • the matching circuit 12 and the high frequency circuit 1a can be miniaturized.
  • a matching circuit 12 including a first impedance element is connected between the antenna terminal 101 and the filter 10, and the matching circuit 12 is a path connecting the antenna terminal 101 and the filter 10. All the series arm elements having one or more series arm elements connected in series and connected in series to the path may be surface-mounted impedance elements.
  • the transmission loss of the matching circuit 12 and the high frequency circuit 1a can be further reduced.
  • a matching circuit 12 including a first impedance element is connected between the antenna terminal 101 and the filter 10, and the matching circuit 12 is a path connecting the antenna terminal 101 and the filter 10.
  • the series arm element having a plurality of series arm elements connected in series and connected closest to the antenna terminal 101 among the plurality of series arm elements may be a surface-mounted impedance element.
  • the reflection coefficient in the first communication band and the second communication band of the filter is further connected. Therefore, the transmission loss of the high frequency circuit 1a including the filter can be reduced.
  • the high frequency circuit 1 is connected to the switch 50 without an impedance element, and includes a filter 10 having a variable pass band, a filter 20 having a non-variable pass band, and a switch 50 and a filter 20.
  • the first mode which comprises a second impedance element connected between them and transmits a signal of the first communication band
  • the first channel signal of the first communication band is transmitted, and the band widest than that of the first communication band.
  • a second channel signal having a narrower bandwidth than the first channel signal is transmitted, and at least one of the first communication band and the second communication band communicates for 5 GNR. It is a band
  • the pass band of the first filter is the first pass band in the case of the first mode, and is the second pass band wider than the first pass band in the case of the second mode.
  • the pass band of the filter 10 is narrowed to reduce the frequency interval between the pass band of the filter 10 and the communication band close to the first communication band. Since a large amount can be secured, it is possible to secure the attenuation characteristic of the communication band close to the first communication band (suppress unnecessary radiation). Further, as a countermeasure against the transmission loss increased by making the filter 10 variable, an impedance element is not arranged between the switch 50 and the filter 10. As a result, the signals of the first communication band and the second communication band can be transmitted with low loss, so that the strict EVM standard at 5 GNR can be satisfied.
  • the high frequency circuit 1B according to the second modification of the second embodiment further has a filter 30 whose pass band does not change, and a third impedance connected between the path connecting the switch 50 and the filter 10 and the filter 30.
  • the element may be provided.
  • the second communication band may have a wider band than the first communication band.
  • the third impedance element is connected between the switch 50 and the filter 30, whereas the impedance element is not arranged between the switch 50 and the filter 10, so that the third impedance element passes through the filter 10.
  • the EVM standard of the signals of the 1st communication band and the 2nd communication band can be satisfied.
  • the first communication band is n1 for 5G NR
  • the second communication band is n65 for 5G NR. You may.
  • the pass band of the filter 20 may include n34 or n39 for 5G NR.
  • the pass band of the filter 30 may include n3 for 5 GNR.
  • the filter 10 may be an elastic wave filter using a bulk elastic wave.
  • the attenuation slope near the pass band of the filter 10 can be steep and can be miniaturized.
  • the communication device 5 includes an RFIC 3 for processing a high frequency signal and a high frequency circuit 1 for transmitting a high frequency signal between the RFIC 3 and the antenna 2.
  • the high-frequency circuit and communication device according to the present invention have been described above based on the embodiments and modifications, but the high-frequency circuit and communication device according to the present invention are not limited to the above-described embodiments and modifications. do not have.
  • Other embodiments realized by combining arbitrary components in the above-described embodiments and modifications, and various modifications that can be conceived by those skilled in the art within the scope of the present invention are applied to the above-described embodiments.
  • the present invention also includes the obtained modifications and various devices incorporating the high frequency circuit and the communication device.
  • At least one of the first communication band and the second communication band may have a frequency band of 5 GHz or more.
  • communication bands for other wireless access technologies may be used in the embodiments and modifications described above.
  • a communication band for a wireless local area network may be used.
  • a millimeter wave band of 7 GHz or more may be used as the communication band.
  • the high frequency circuit 1, the antenna 2, and the RFIC 3 may form a millimeter-wave antenna module, and a distributed constant type filter may be used as the filter.
  • the present invention can be widely used in communication devices such as mobile phones as a high frequency circuit arranged in the front end portion.
  • RFIC radio frequency circuit
  • BBIC Baseband signal processing circuit
  • Variable circuit 18, 19 Circuit element 50, 51 switch 50a, 51a common terminal 50b, 50c, 51b, 51c, 51d selection terminal 101 antenna terminal 102, 103, 110, 120, 130 input / output terminal

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)

Abstract

L'invention concerne un circuit haute-fréquence (1a) qui comprend : une borne d'antenne (101) ; un filtre (10) dont la bande passante est variable ; et un premier élément d'impédance monté en surface connecté entre la borne d'antenne (101) et le filtre (10), où : dans un premier mode pour transmettre des signaux d'une première bande de communication, des premiers signaux de canal de la première bande de communication sont transmis ; dans un deuxième mode pour transmettre des signaux d'une deuxième bande de communication, des deuxièmes signaux de canal dont la largeur de bande est plus étroite que celle des premiers signaux de canal sont transmis ; au moins une de la première bande de communication et/ou de la deuxième bande de communication étant une bande de communication pour 5G NR ; et la bande passante du filtre (10) devient une première bande passante dans le cas du premier mode et devient une deuxième bande passante plus large que la première bande passante dans le cas du deuxième mode.
PCT/JP2021/026126 2020-08-28 2021-07-12 Circuit haute-fréquence et dispositif de communication WO2022044580A1 (fr)

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JP2020-144830 2020-08-28
JP2020144830 2020-08-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024057738A1 (fr) * 2022-09-13 2024-03-21 株式会社村田製作所 Circuit haute fréquence

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JP2006129445A (ja) * 2004-09-28 2006-05-18 Fujitsu Media Device Kk 分波器
JP2013009411A (ja) * 2012-08-23 2013-01-10 Taiyo Yuden Co Ltd アンテナ分波器
WO2013118237A1 (fr) * 2012-02-06 2013-08-15 太陽誘電株式会社 Circuit de filtrage et module
WO2015098791A1 (fr) * 2013-12-27 2015-07-02 株式会社村田製作所 Dispositif de branchement
WO2016158954A1 (fr) * 2015-03-30 2016-10-06 株式会社村田製作所 Filtre à haute fréquence, circuit d'extrémité avant et dispositif de communication
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JP2006129445A (ja) * 2004-09-28 2006-05-18 Fujitsu Media Device Kk 分波器
WO2013118237A1 (fr) * 2012-02-06 2013-08-15 太陽誘電株式会社 Circuit de filtrage et module
JP2013009411A (ja) * 2012-08-23 2013-01-10 Taiyo Yuden Co Ltd アンテナ分波器
WO2015098791A1 (fr) * 2013-12-27 2015-07-02 株式会社村田製作所 Dispositif de branchement
WO2016158954A1 (fr) * 2015-03-30 2016-10-06 株式会社村田製作所 Filtre à haute fréquence, circuit d'extrémité avant et dispositif de communication
WO2017170071A1 (fr) * 2016-03-31 2017-10-05 株式会社村田製作所 Filtre à fréquence variable, circuit rf frontal et terminal de communication

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WO2024057738A1 (fr) * 2022-09-13 2024-03-21 株式会社村田製作所 Circuit haute fréquence

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