WO2022041561A1 - 半导体激光器装置 - Google Patents

半导体激光器装置 Download PDF

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Publication number
WO2022041561A1
WO2022041561A1 PCT/CN2020/134776 CN2020134776W WO2022041561A1 WO 2022041561 A1 WO2022041561 A1 WO 2022041561A1 CN 2020134776 W CN2020134776 W CN 2020134776W WO 2022041561 A1 WO2022041561 A1 WO 2022041561A1
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Prior art keywords
modules
semiconductor laser
emitting units
laser device
laser light
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PCT/CN2020/134776
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English (en)
French (fr)
Inventor
何晓光
郝亮
刘瑞
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南京镭芯光电有限公司
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Priority to EP20951228.4A priority Critical patent/EP4207520A1/en
Publication of WO2022041561A1 publication Critical patent/WO2022041561A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction

Definitions

  • the present invention relates to the technical field of lasers, and in particular, to a semiconductor laser device.
  • High-power semiconductor laser devices are the core components in the field of laser processing technology, and their packaging and preparation are very important.
  • the packaging quality will directly affect the spectral parameters, optoelectronic parameters, reliability and working life of the laser.
  • the semiconductor laser device of spatial beam combining mainly makes the light emitted from a single semiconductor laser light-emitting unit pass through the fast-axis collimating lens (FAC), the slow-axis collimating lens (SAC), the mirror, the fiber coupler ( FOC) shaping and coupling, and then into the fiber to achieve the entire coupling process.
  • FAC fast-axis collimating lens
  • SAC slow-axis collimating lens
  • FOC fiber coupler
  • the stacking of multiple semiconductor laser light-emitting units is realized in a stepped manner in the direction of the fast axis.
  • Each semiconductor laser light-emitting unit corresponds to its own FAC, SAC and reflector. root fiber.
  • each semiconductor laser light-emitting unit is coupled into the optical fiber through its own corresponding optical device link, resulting in a large number of repeated optical elements arranged in the entire structure, and the semiconductor laser light-emitting units cannot share optical elements with each other. , making it difficult to compress device costs and labor costs. Moreover, due to the large number of devices, it is difficult to control the reliability, volume and weight of the package in an ideal state, which does not meet the packaging requirements of downstream applications for semiconductor lasers.
  • the present invention aims to provide a semiconductor laser device capable of multiplexing optical paths with high-power spatial beam combining.
  • Embodiments of the present invention provide a semiconductor laser device, which includes: at least two laser light-emitting units; and a beam shaping component, wherein the at least two laser light-emitting units multiplex a group of the beam shaping components, so as to pass through a group of the beam shaping components.
  • a beam shaping component for shaping the laser beams respectively emitted by the at least two laser light-emitting units; a fiber coupler; and at least two optical fibers, the laser beams respectively emitted by the at least two laser light-emitting units are subjected to a set of beam shaping After the components are processed, they are respectively coupled into the at least two optical fibers through the optical fiber coupler; wherein, the number of the optical fibers is equal to the number of the laser light-emitting units.
  • the laser beams respectively emitted by the at least two laser light-emitting units have the same propagation direction and the same divergence angle.
  • the laser light-emitting unit is made by slitting a bar of a semiconductor laser.
  • the beam shaping assembly includes a fast-axis collimating lens and a slow-axis collimating lens.
  • a set of the beam shaping components multiplexed with the at least two laser light-emitting units is used as a module, and the module further includes a mirror for changing the beam shaping components after processing by the set of the beam shaping components.
  • a plurality of the modules are configured to equalize the optical path from the laser lighting unit of each of the modules to the optical fiber.
  • a plurality of the modules have the same spacing in the horizontal direction, the spacing being greater than a first value representing the length of the major axis of the elliptical cross-sectional shape of the light beam exiting the mirror.
  • a plurality of the modules are arranged in steps in the direction of the fast axis, the steps in the direction of the fast axis between adjacent modules are the same, and the height of the steps is greater than the second value, and the first The binary value represents the length of the minor axis of the elliptical cross-sectional shape of the beam exiting the mirror.
  • the plurality of modules are configured such that the propagation direction of the laser beams emitted by the laser light-emitting units of the first part of the plurality of modules is the same as the propagation direction of the laser light-emitting units of the second part of the plurality of modules.
  • the propagation directions of the laser beams intersect, and the second part of the plurality of modules multiplexes a mirror of one module of the first part of the plurality of modules.
  • a group of the beam shaping components to which the at least two laser light-emitting units are multiplexed is used as a module, wherein the semiconductor laser device includes a plurality of the modules, and the plurality of modules are are arranged in parallel in the axial direction; wherein, the beam shaping component includes a fast-axis collimating lens; wherein a slow-axis collimating lens is arranged between a plurality of the modules and the optical fiber coupler, and a plurality of the modules complex Use this slow axis to collimate the lens.
  • a corrector for correcting the angle of the laser beam entering the optical fiber is provided between the fiber coupler and the optical fiber.
  • the modifier is a split prism or a concave lens, or the end face of the optical fiber is configured as an inclined end face and used as the modifier.
  • the fiber coupler includes a slow-axis focusing cylindrical lens and a fast-axis focusing cylindrical lens.
  • the slow-axis collimating lens and the slow-axis focusing cylindrical lens form a double telecentric optical path to correct the angle of the laser beam after entering the optical fiber.
  • the at least two optical fibers are fixed in the form of a close-packed structure or a ceramic ferrule.
  • the semiconductor laser device further includes a spectral beam combiner and/or a polarization beam combiner between the fiber coupler and the beam shaping assembly.
  • the spectral combiner or polarization combiner is provided between the mirror and the fiber coupler.
  • the spectral beam combiner and the polarization beam combiner are sequentially arranged between the reflector and the fiber coupler. Specifically, the laser beam reflected by the reflector first passes through the spectrum combiner. The laser beams of different wavelengths are superimposed together, and then the p-light and s-light are superimposed together through a polarization beam combiner.
  • the device of the embodiment of the present invention adopts at least two semiconductor laser light-emitting units, which can be coupled into multiple optical fibers, and can realize the output of multiple pigtails.
  • the device in the embodiment of the present invention realizes the multiplexing of most optical components, reduces the cost of packaging components and labor hours, reduces the overall weight and volume of the device, and improves the reliability of the packaging. Under the premise of the same volume and number of devices, the output power can be improved several times.
  • the device in the embodiment of the present invention can solve the problem that the optical axis of the combined beam before entering the fiber is not parallel to the corresponding fiber beam, can improve the energy concentration of the output beam from the fiber, and reduce the amount of energy transmitted in the fiber. The probability that the beam will overflow the fiber core.
  • FIG. 1A is a schematic structural diagram of a semiconductor laser device according to an embodiment of the present invention.
  • FIG. 1B is a schematic diagram of a double telecentric optical path of the semiconductor laser device shown in FIG. 1A .
  • FIG. 2A is a schematic structural diagram of a semiconductor laser device in a horizontal direction according to another specific embodiment of the present invention.
  • FIG. 2B is a schematic structural diagram of the semiconductor laser device shown in FIG. 2A in the vertical direction.
  • FIG. 3A and FIG. 3B are enlarged views of area A and area B in FIG. 2A , respectively.
  • FIG. 4A is a schematic diagram of a spot pattern of a laser beam emitted by a single module in the semiconductor laser device shown in FIG. 2A .
  • FIG. 4B is a schematic diagram of spot patterns of laser beams emitted by all modules in the semiconductor laser device shown in FIG. 2A .
  • 5A is an enlarged view of an optical fiber of a semiconductor laser device according to still another embodiment of the present invention.
  • 5B is an enlarged view of an optical fiber of a semiconductor laser device according to still another embodiment of the present invention.
  • FIG. 6A is a schematic structural diagram of a semiconductor laser device according to yet another specific embodiment of the present invention.
  • FIG. 6B is a schematic three-dimensional structure diagram of the semiconductor laser device shown in FIG. 6A .
  • FIG. 7 is a schematic structural diagram of a semiconductor laser device according to still another specific embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of a semiconductor laser device according to yet another specific embodiment of the present invention.
  • Embodiment 1 provides a semiconductor laser device.
  • FIG. 1A is a schematic structural diagram of a semiconductor laser device according to an embodiment of the present invention.
  • the semiconductor laser device in this embodiment includes: two laser light-emitting units 101-1 and 101-2; a beam shaping component including FAC 102 and SAC 103, and the two laser light-emitting units are multiplexed into one group A beam shaping component, so as to shape the laser beams respectively emitted by the two laser light-emitting units through a set of beam shaping components; FOC (which includes a fast-axis focusing cylindrical lens 104-1 and a slow-axis focusing cylindrical lens 104-2); And the close-packed structure 105 including 2 optical fibers, it includes two optical fibers 105-1 and 105-2, and the laser beams emitted by the 2 laser light-emitting units 101-1 and 101-2 respectively are processed by FAC 102 and SAC 103, Two optical fibers are respectively coupled into two optical fibers through FOC lens groups 104-1 and 104-2.
  • the two laser light-emitting units are made by cutting the semiconductor laser bar, inheriting all the structural properties of the bar, such as bar width, duty cycle, the width of each laser light-emitting unit, and the spacing between the laser light-emitting units .
  • the two laser light-emitting units 101-1 and 101-2 respectively emit independently propagating laser beams 101-11 and 101-12. Except for the spatial positions of the laser light-emitting units, these two beams have the same properties, and have the same propagation direction and the same divergence angle.
  • it is not limited to 2 laser light-emitting units, but may also be 3, 4, 5 or more laser light-emitting units. According to the number of pigtails, that is, optical fibers, a corresponding number of laser light-emitting units can be set.
  • the FOC can also be a single lens, or other lenses for focusing.
  • the optical fiber can also be fixed in the form of, for example, a ceramic ferrule.
  • the semiconductor laser device may include a mirror, which may be disposed after the beam shaping assembly (FAC and SAC), before the FOC, or may be disposed between the FAC and the SAC, and the two laser light-emitting units may be The same mirror is multiplexed, and the shaped laser beam is folded to the FOC through the mirror, and then coupled into two fibers respectively through the FOC.
  • a mirror which may be disposed after the beam shaping assembly (FAC and SAC), before the FOC, or may be disposed between the FAC and the SAC, and the two laser light-emitting units may be The same mirror is multiplexed, and the shaped laser beam is folded to the FOC through the mirror, and then coupled into two fibers respectively through the FOC.
  • the SAC 103 and the slow-axis focusing cylindrical mirror 104-2 can form a double telecentric optical path to correct the angle of the laser beam after entering the optical fiber.
  • FIG. 1B shows the double telecentric optical path. For the sake of clarity of the drawing, other optical elements are omitted in FIG. 1B.
  • Focusing cylindrical mirror constitutes a double telecentric optical path to correct the angle of the laser beam after entering the fiber.
  • Embodiment 2 provides a semiconductor laser device, which is different from Embodiment 1 in that the semiconductor laser device includes a plurality of modules, and each module at least includes at least two semiconductor laser light-emitting units and a group of beam shaping multiplexed thereof. components to increase output power.
  • FIGS. 2A to 3B are schematic structural diagrams of a semiconductor laser device according to another embodiment of the present invention, respectively, and FIGS. 3A and 3B are enlarged views of area A and area B in FIG. 2A , respectively.
  • the semiconductor laser device in this embodiment may include a plurality of modules 211 , 212 , . -2), and a close-packed structure 206 comprising 2 optical fibers 206-1 and 206-2.
  • each module may include a semiconductor laser chip array COS 201, a group of beam shaping components (including FAC 202 and SAC 203) and a reflecting mirror 204, wherein the COS 201 includes a chip 201-3 and two laser light-emitting units 201-1 and 201-2 thereon, and the two laser light-emitting units 201-1 and 201-2 are multiplexed into one group FAC 202 and SAC 203, thus, the laser beams respectively emitted by the two laser light-emitting units 201-1 and 201-2 in the slow axis direction pass through FAC 202 and SAC 203, respectively, are shaped by FAC 202 and SAC 203, and then The same mirror 204 is multiplexed, the shaped laser beam is folded to the FOC 205-1 and 205-2 through the mirror 204, and then coupled into the two fibers 206-1 and 206 through
  • the laser beams of each module are folded to the same group of FOCs 205-1 and 205-2 through the mirrors of each module to couple into two optical fibers 206-1 and 206-2, so that the two optical fibers 206-1 and 206-2 are respectively coupled into the laser beams from n modules, and the output power thereof is multiplied.
  • the beam divergence angles are not the same in the direction parallel to the PN junction and perpendicular to the PN junction, and the fast axis divergence angle is much larger than the slow axis divergence angle. Therefore, the beam shaping of the semiconductor laser must be carried out in two steps, one for the fast and slow axes respectively.
  • the laser beams 201-11 and 201-12 from the two laser light-emitting units 201-1 and 201-2 jointly pass through the FAC 202 to be collimated in the fast axis direction, and then Through the SAC 203, the slow axis direction is collimated together, and then the traveling direction of the laser beam is changed through the mirror 204.
  • the cross-sectional shape of the beam leaving the mirror is elliptical
  • the beam in the slow axis direction corresponds to the long axis of the ellipse
  • the length of the long axis is a
  • the beam in the fast axis direction corresponds to the short axis of the ellipse
  • the length of the short axis is h.
  • the distances between the plurality of modules in the horizontal direction (slow axis direction) are the same and >a
  • the plurality of modules are arranged in steps in the vertical direction (fast axis direction), and adjacent
  • the step heights in the fast axis direction between modules are the same and the step height > h.
  • the spot patterns of the light beams emitted by all the modules are in a tightly stacked array in the fast axis direction, as shown in FIG. 4B.
  • all the beams in Fig. 4B are focused by FOCs 205-1 and 205-2 (coupling lens groups) into converging beams of 201-11 and 201-12, respectively, and then coupled into fibers 206-1 and 206-2, respectively.
  • one COS includes two laser light-emitting units, and one COS may also include three, four, five or more laser light-emitting units. The number is the same as the number of laser light-emitting units.
  • the 2 laser light-emitting units in each module are split from a semiconductor laser bar, inheriting all the structural properties of the bar, such as bar width, duty cycle, and the width of each laser light-emitting unit , and the distance between the laser light-emitting unit.
  • the two laser light-emitting units 201-1 and 201-2 respectively emit independently propagating laser beams 201-11 and 201-12. Except for the spatial positions of the laser light-emitting units, these two beams have the same properties, and have the same propagation direction and The same divergence angle, and will partially overlap each other during the spatial propagation (as shown in Figure 4A).
  • the FOC may also be a single lens, or other lenses for focusing.
  • multiple modules may be configured to equalize the optical path from the laser lighting unit of each module to the optical fiber.
  • the multiple modules are not arranged in steps in the direction of the fast axis, and the beams can be stepped in the direction of the fast axis by making the mirrors have a specific inclination angle, or other methods are used to make the laser beam of each module It can be folded to the same set of FOCs 205-1 and 205-2 for coupling into 2 fibers, so that the laser beams from n modules are respectively coupled into the 2 fibers.
  • Embodiment 3 provides a semiconductor laser device. Compared with Embodiment 2, the difference is that a corrector for correcting the angle of the laser beam entering the optical fiber is also provided between the FOC and the optical fiber.
  • the modifier is a split prism 307, and the laser beam can be incident through the split prism 307 so that its optical axis can be parallel to the optical axis of the optical fiber, so as to solve the problem of the laser beams 201-11 and 201- before entering the fiber. 12
  • the optical axis of the converging beam is not parallel to the corresponding fiber beam. In this way, the energy concentration of the output beam of the optical fiber can be improved, and the probability that the light beam transmitted in the optical fiber overflows the core of the optical fiber is reduced.
  • the modifier is a concave lens 308 .
  • the end face of the optical fiber can also be configured as an inclined end face to be used as a modifier.
  • the slow-axis collimating lens (SAC) 203 and the slow-axis focusing cylindrical lens 205-2 constitute the double telecentric optical path to correct the laser beam after entering the optical fiber. angle.
  • Embodiment 4 provides a semiconductor laser device. Compared with Embodiment 2, the difference is that by multiplexing the mirrors of one of the modules, several modules can be further stacked in the direction of the fast axis to further reduce the volume and increase the output power.
  • 6A and 6B are a schematic plan view and a three-dimensional structure view of a semiconductor laser device according to another embodiment of the present invention.
  • the semiconductor laser device in this embodiment includes: 10 modules, an FOC (which includes a fast-axis focusing cylindrical lens 411-1 and a slow-axis focusing cylindrical lens 411-2), and includes Close-packed structure 412 of 5 fibers.
  • each module includes 1 COS 401-410, 1 group of beam shaping components (including FAC and SAC) and 1 mirror, each COS includes 5 laser light-emitting units, these 5 laser light-emitting units multiplex FAC and SAC, in order to shape the laser beams respectively emitted by the 5 laser light-emitting units through the FAC and SAC, and change the direction of the shaped laser beams through the mirror. After being redirected by the mirror, it is coupled into 5 fibers through FOC.
  • the propagation directions of the laser beams emitted by COS 401-406 of the 6 modules of the first part intersect with the propagation directions of the laser beams emitted by COS 407-410 of the 4 modules of the second part, and the 4 modules of the second part
  • the mirror corresponding to COS 406 is multiplexed.
  • the modules including COS 407, 408, 409, and 410 are further stacked in steps in the fast axis direction in the optical path after the SAC corresponding to COS 406 and before the mirror.
  • the five laser light-emitting units For each of the four modules in the second part, the five laser light-emitting units multiplex a set of FAC, SAC and mirrors, and the laser beams respectively emitted by the five laser light-emitting units are subjected to fast axis direction through the FAC and SAC.
  • the collimation and slow axis direction are collimated, and the traveling direction of the shaped laser beam is changed through the reflector.
  • the traveling direction of the laser beam is changed again through the reflector 406-1 corresponding to COS 406, so that the four modules of the second part are
  • the laser beam can be folded to the same set of FOC as the laser beam of the first part of the 6 modules to be coupled into the 5 fibers.
  • the optical paths of the laser beams emitted by each COS (including 5 laser light-emitting units) to the end faces of the 5 optical fibers are equal.
  • the optical length of the beam emitted by COS 401 is L401+W401
  • the distances between multiple modules in the horizontal direction (slow axis direction) are the same and >a, and the multiple modules are arranged in steps in the vertical direction (fast axis direction), and adjacent ones
  • the height of the steps in the direction of the fast axis between modules is the same and the height of the steps > h.
  • one COS includes 5 laser light-emitting units, and one COS may also include 2, 3, 4 or more laser light-emitting units. The number is the same as the number of laser light-emitting units.
  • the total number of modules is not limited to 10
  • the number of modules in the first part is not limited to 6
  • the number of modules in the second part is not limited to 4, and any number of modules can be set as required.
  • the number of modules, and some of them are the modules of the first part and the other part are the modules of the second part.
  • the apparatus includes more than two parts of modules, for example, a third part or even more parts of modules can be stacked on top of the second part of the modules.
  • mirrors of more than one module may be multiplexed, eg, an apparatus may include a module of a third portion that multiplexes a mirror of another module of the first portion, and so on.
  • the slow-axis collimating lens and the slow-axis focusing cylindrical lens form a double telecentric optical path to correct the angle of the laser beam after entering the optical fiber.
  • Embodiment 5 provides a semiconductor laser device. Compared with Embodiment 2, the difference lies in that multiple modules are stacked in parallel in the fast axis direction, the mirror is omitted, and one SAC is reused for all modules, which makes the semiconductor laser device more highly integrated and smaller.
  • the semiconductor laser device in this embodiment includes: 5 modules, each module includes 1 COS 501 and 1 FAC 502, COS 501 includes 5 laser light-emitting units, these 5 The laser light-emitting unit multiplexes one FAC 502; the SAC 503 and the FOC coupling lens group (which includes the fast-axis focusing cylindrical lens 504-1 and the slow-axis focusing cylindrical lens 504-2), the SAC 503 is arranged between the module and the FOC , 5 modules multiplex 1 SAC 503 and FOC 504-1 and 504-2; the close-packed structure 505 including 5 optical fibers, the laser beams emitted by the 5 laser light-emitting units in each COS 501 are multiplexed with 1 FAC , the laser beams emitted by the five COS 501s are shaped and focused by the same SAC and FOC in turn, and then coupled into the five fibers respectively.
  • the optical paths of the laser beams emitted by each COS (including 5 laser light-emitting units) to the end faces of the 5 optical fibers are equal.
  • one COS includes 5 laser light-emitting units, and one COS may also include 2, 3, 4 or more laser light-emitting units.
  • the number is the same as the number of laser light-emitting units.
  • the number of modules is not limited to 5, and any number can be set as required.
  • the FOC may also be a single lens, or other lenses for focusing.
  • the slow-axis collimating lens 503 and the slow-axis focusing cylindrical mirror 504-2 form a double telecentric optical path to correct the angle of the laser beam after entering the optical fiber.
  • Embodiment 6 provides a semiconductor laser device. Compared with Embodiment 2, the difference is that a spectral beam combiner or a polarization beam combiner is arranged between the FOC and the beam shaping component, so as to further combine the spectral beam combiner or the polarization beam combiner on the basis of the spatial beam combination.
  • the semiconductor laser device in this embodiment may include a plurality of modules 611, 612, ... 61n and 611', 612', ... 61n', a spectral beam combiner (eg, a dichroic beam splitter) 606, a FOC Lens group: fast-axis focusing cylindrical lens 607-1 and slow-axis focusing cylindrical lens 607-2, and a close-packed structure 608 including 2 optical fibers.
  • a spectral beam combiner eg, a dichroic beam splitter
  • FOC Lens group fast-axis focusing cylindrical lens 607-1 and slow-axis focusing cylindrical lens 607-2
  • close-packed structure 608 including 2 optical fibers.
  • a plurality of modules 611, 612, . . . 61n are arranged in steps in the vertical direction (fast axis direction), and are arranged in parallel in the horizontal direction (slow axis direction) with the same spacing, and each module may include a semiconductor laser chip array COS 601, 1 group of beam shaping components (including FAC 602 and SAC 603) and 1 mirror 604, wherein, COS 601 includes 2 laser light-emitting units, and these two laser light-emitting units multiplex a group of FAC 602 and SAC 603, thereby , in the direction of the slow axis, the laser beams emitted by the two laser light-emitting units respectively pass through the FAC 602 and the SAC 603, and are shaped by the FAC 602 and the SAC 603, and then multiplex the same mirror 604.
  • the latter laser beam is folded towards the dichroic beam splitter 606 .
  • the structures and layouts of the modules 611', 612', ... 61n' are the same as those of the modules 611, 612, ... 61n, except that the laser beams emitted by the modules 611', 612', ... 61n' all have the second wavelength
  • the laser beam, and a reflecting mirror 605 is added between the modules 611 ′, 612 ′, .
  • the dichroic beam splitter 606 a reflecting mirror that transmits light of a first wavelength and reflects light of a second wavelength is used.
  • the dichroic beam splitter 606 can transmit the laser beam with the first wavelength and reflect the laser beam with the second wavelength, the laser beams with the first wavelength from the modules 611 , 612 , . . . 61n pass through the dichroic beam splitter 606 , and The laser beams with the second wavelength from the modules 611', 612', . . . 61n' are reflected by the dichroic beam splitter 606 and the laser beams from the modules 611, 612, . . . 61n are stacked together to be combined. After the combined laser beams Coupling into the corresponding fiber through FOC 607-1 and 607-2 respectively. In this way, the semiconductor laser device in this embodiment can further perform spectral beam combining on the basis of spatial beam combining.
  • the mirrors 604 and 605 both function to change the traveling direction of the laser beam, and can be omitted or added according to actual needs, so as to combine the laser beams from different positions in space.
  • the dichroic beam splitter 606 may be replaced with a polarizing beam splitter prism (PBS), thereby combining spatial beam combining with polarization beam combining.
  • PBS polarizing beam splitter prism
  • the laser beams emitted by the modules 611, 612, ... 61n may all be p light
  • the laser beams emitted by the modules 611', 612', ... 61n' may all be s light.
  • the PBS can transmit p light and reflect s light, so after passing through the PBS, the laser beams from modules 611, 612, ... 61n and the laser beams from modules 611', 612', ... 61n' are stacked and combined to realize polarization beam combining .
  • a spectral beam combiner and a polarization beam combiner can also be added in sequence between the FOC and the beam shaping component (specifically, the SAC), so as to further combine the spectral beam combiner on the basis of the spatial beam combining.
  • the SAC beam shaping component
  • beam and polarized beam combination For example, firstly, the laser beams of different wavelengths are superimposed together by the dichroic beam splitter in the above-mentioned manner, and then the spectrally combined p-light and s-light are superimposed together in the above-mentioned manner by the PBS.
  • one COS includes two laser light-emitting units, and one COS may also include three, four or more laser light-emitting units. The number of light-emitting units is the same.
  • the FOC may also be a single lens, or other lenses for focusing.
  • a double telecentric optical path can be formed by a slow-axis collimating lens and a slow-axis focusing cylindrical lens, so as to correct the angle of the laser beam after entering the optical fiber.

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Abstract

一种半导体激光器装置，包括：至少两个激光器发光单元（101-1、101-2）；光束整形组件（102、103），至少两个激光器发光单元（101-1、101-2）复用一组光束整形组件（102、103），以便通过一组光束整形组件（102、103）对至少两个激光器发光单元（101-1、101-2）分别发出的激光光束（101-11、101-12）进行整形；光纤耦合器（104-1、104-2）；以及至少两根光纤（105-1、105-2），至少两个激光器发光单元（101-1、101-2）分别发出的激光光束（101-11、101-12）经过一组光束整形组件（102、103）处理后通过光纤耦合器（104-1、104-2）分别耦合进至少两根光纤（105-1、105-2）；其中，光纤（105-1、105-2）的数量等于激光器发光单元（101-1、101-2）的数量。多个激光器发光单元（101-1、101-2）复用一组光束整形组件（102、103），使得半导体激光器装置的整体重量和体积明显减小，生产半导体激光器装置的器件成本和工时成本明显降低，封装的可靠性得以提高。

Description

半导体激光器装置
相关申请的交叉引用
本申请要求于2020年8月28日提交的申请号为202010888281.4、发明名称为“半导体激光器装置”的中国发明专利申请的优先权，上述中国专利申请的全部内容通过引用并入本文。
技术领域
本发明涉及激光器技术领域，具体而言，其涉及一种半导体激光器装置。
背景技术
高功率的半导体激光器装置作为激光加工技术领域的核心部件，其封装与制备十分重要。封装质量会直接影响激光器的光谱参数、光电参数、可靠性以及工作寿命。并且，随着封装制造技术的发展，对封装的体积的小型化或封装的轻量化、生成效率及良品率都有严苛的要求。
在现有技术中，空间合束的半导体激光器装置主要是使单个半导体激光器发光单元出射光依次经过快轴准直透镜(FAC)、慢轴准直透镜(SAC)、反射镜、光纤耦合器(FOC)的整形和耦合，然后进入光纤以实现整个耦合过程。为了达到更高功率输出的要求，在快轴方向以台阶方式实现多个半导体激光器发光单元的堆叠，每个半导体激光器发光单元分别对应自己的FAC、SAC和反射镜，最后经过FOC合束进入同一根光纤。
在这种封装形式中，每个半导体激光器发光单元通过自己对应的光学器件链路耦合进入光纤，导致在整个结构内设置了大量的重复的光学元件，半导体激光器发光单元彼此之间无法共享光学元件，造成器件成本和工时成本很难压缩。并且，由于器件多，封装的可靠性、体积、重量都难以控制在理想的状态，不符合下游应用对半导体激光器的封装的需求。
发明内容
鉴于现有技术中的半导体激光器装置所存在的上述问题，本发明目的在于提供一种能够复用光路的高功率的空间合束的半导体激光器装置。
本发明实施方式提供了一种半导体激光器装置，其包括：至少两个激光器发光单元；光束整形组件，所述至少两个激光器发光单元复用一组所述光束整形组件，以便通过一组所述光束整形组件对所述至少两个激光器发光单元分别发出的激光光束进行整形；光纤耦合器；以及至少两根光纤，所述至少两个激光器发光单元分别发出的激光光束经过一组所述光束整形组件处理后通过所述光纤耦合器分别耦合进所述至少两根光纤；其中，所述光纤的数量等于所述激光器发光单元的数量。
在一些实施方式中，所述至少两个激光器发光单元分别发出的激光光束具有相同的传播方向和相同的发散角度。例如，所述激光器发光单元通过分切半导体激光器Bar条制得。
在一些实施方式中，所述光束整形组件包括快轴准直透镜和慢轴准直透镜。
在一些实施方式中，所述至少两个激光器发光单元与其复用的一组所述光束整形组件作为一个模块，所述模块还包括反射镜，用于改变经过一组所述光束整形组件处理后的激光光束的方向，其中，所述半导体激光器装置包括多个所述模块。
在一些实施方式中，多个所述模块配置成使从各个所述模块的激光器发光单元到所述光纤的光程相等。
在一些实施方式中，多个所述模块在水平方向上的间距相同，所述间距大于第一值，所述第一值表示离开所述反射镜的光束的椭圆形截面形状的长轴长度。
在一些实施方式中，多个所述模块在快轴方向上呈阶梯布置，相邻的所述模块之间在快轴方向上的台阶高度相同，所述台阶高度大于第二值，所述第二值表示离开所述反射镜的光束的椭圆形截面形状的短轴长度。
在一些实施方式中，多个所述模块构成为：多个所述模块中的第一部分的激光器发光单元发出的激光光束的传播方向与多个所述模块中的第二部分的激光器发光单元发出的激光光束的传播方向相交，并且多个所述模块中的第二部分复用多个所述模块中的第一部分中的一个模块的反射镜。
在一些实施方式中，所述至少两个激光器发光单元与其复用的一组所述光束整形组件作为一个模块，其中，所述半导体激光器装置包括多个所述模块，所 述多个模块在快轴方向上平行布置；其中，所述光束整形组件包括快轴准直透镜；其中，在多个所述模块与所述光纤耦合器之间设置有慢轴准直透镜，多个所述模块复用该慢轴准直透镜。
在一些实施方式中，在所述光纤耦合器和所述光纤之间设有用以修正激光光束进入光纤后的角度的修正器。例如，所述修正器为劈型棱镜或凹透镜，或者，所述光纤的端面构成为倾斜端面作为所述修正器使用。
在可选的实施方式中，所述光纤耦合器包括慢轴聚焦柱面镜和快轴聚焦柱面镜。在一些实施方式中，所述慢轴准直透镜和所述慢轴聚焦柱面镜构成双远心光路以修正激光光束进入光纤后的角度。
在一些实施方式中，所述至少两根光纤采用密排结构或陶瓷插芯的形式固定。
在一些实施方式中，半导体激光器装置还包括位于所述光纤耦合器与所述光束整形组件之间的光谱合束器和/或偏振合束器。例如，所述光谱合束器或偏振合束器设置在所述反射镜与所述光纤耦合器之间。可选的，所述光谱合束器和偏振合束器依次设置在所述反射镜与所述光纤耦合器之间，具体而言，通过所述反射镜反射过来的激光光束首先经过光谱合束器将不同波长的激光光束叠加在一起，然后经过偏振合束器将p光和s光叠加在一起。
本发明实施方式相对于现有技术具有如下有益技术效果：
本发明实施方式的装置采用至少两个半导体激光器发光单元，可以耦合进入多根光纤，可以实现多条尾纤输出。
相比以往的封装形式，本发明实施方式的装置实现了大部分光学元件的复用，封装的器件成本和工时成本得到降低，装置的整体重量和体积得到减小，封装的可靠性提高，可以在相同的体积和器件数量的前提下，实现几倍的输出功率的提升。
本发明实施方式的装置通过设置修正器，可以解决入纤前合束的光束的光轴与所对应的光纤光束不平行的问题，可以提高光纤输出光束的能量集中度，减小光纤中传输的光束溢出光纤纤芯的概率。
附图说明
图1A是根据本发明一种具体实施方式的半导体激光器装置的结构示意 图。图1B是图1A所示的半导体激光器装置的双远心光路的示意图。
图2A是根据本发明另一种具体实施方式的半导体激光器装置的水平方向上的结构示意图。图2B是图2A所示的半导体激光器装置在垂直方向上的结构示意图。
图3A和图3B分别为图2A中A区域和B区域的放大图。
图4A为图2A所示的半导体激光器装置中单个模块发出的激光光束的光斑图案示意图。图4B为图2A所示的半导体激光器装置中的所有模块发出的激光光束的光斑图案示意图。
图5A为根据本发明又一种具体实施方式的半导体激光器装置的光纤处的放大图。图5B为根据本发明又一种具体实施方式的半导体激光器装置的光纤处的放大图。
图6A为根据本发明再一种具体实施方式的半导体激光器装置的结构示意图。图6B是图6A所示的半导体激光器装置的立体结构示意图。
图7为根据本发明再一种具体实施方式的半导体激光器装置的结构示意图。
图8为根据本发明再一种具体实施方式的半导体激光器装置的结构示意图。
具体实施方式
以下结合附图和具体实施方式对本发明的各个方面进行详细阐述。其中，附图中的结构并非完全按比例进行绘制，其目的在于对本发明的构思进行举例说明。
本领域技术人员应当理解，下述的各种实施例只用于举例说明，而非用于限制本发明的保护范围。还应当理解，本发明所述和附图所示的各实施例中的结构可以具有多种变型。
【实施例1】
实施例1提供了一种半导体激光器装置。图1A为根据本发明一种实施方式的半导体激光器装置的结构示意图。
如图1A所示，本实施例中的半导体激光器装置包括：2个激光器发光单元101-1和101-2；光束整形组件，其包括FAC 102和SAC 103，2个激光器发光单元复用一组光束整形组件，以便通过一组光束整形组件对2个激光器发光单 元分别发出的激光光束进行整形；FOC(其包括快轴聚焦柱面镜104-1和慢轴聚焦柱面镜104-2)；以及包括2根光纤的密排结构105，其包括两根光纤105-1和105-2，2个激光器发光单元101-1和101-2分别发出的激光光束经过FAC 102、SAC 103处理后，通过FOC透镜组104-1和104-2分别耦合进2根光纤。
其中，2个激光器发光单元通过分切半导体激光器Bar条制得，继承了Bar条的所有结构属性，例如条宽、占空比、每个激光器发光单元的宽度、和激光器发光单元之间的间距。2个激光器发光单元101-1和101-2分别发出独立传播的激光光束101-11和101-12，这两个光束除了激光器发光单元的空间位置不同，其他属性相同，具有相同的传播方向和相同的发散角度。
在可选的实施方式中，不局限于2个激光器发光单元，也可以是3个、4个、5个或更多激光器发光单元。根据尾纤即光纤的数量，可以设置相应数量的激光器发光单元。
在可选的实施方式中，FOC也可以是单透镜，或其他起到聚焦作用的透镜。
在可选的实施方式中，光纤也可以采用例如陶瓷插芯的形式进行固定。
在一些实施方式中，半导体激光器装置可以包括反射镜，该反射镜可以设置在光束整形组件(FAC和SAC)之后、FOC之前，或者也可以设置在FAC和SAC之间，2个激光器发光单元可以复用同一个反射镜，通过反射镜将整形后的激光光束折向FOC，然后通过FOC分别耦合进2根光纤。
在本发明的一些实施方式中，SAC 103和慢轴聚焦柱面镜104-2可以构成双远心光路，以修正激光光束进入光纤后的角度。图1B示出了所述双远心光路，为了使附图清楚，图1B中省略了其他光学元件，如图1B所示，通过慢轴准直透镜(SAC)和慢轴FOC(即慢轴聚焦柱面镜)构成双远心光路，以修正激光光束进入光纤后的角度。
【实施例2】
实施例2提供了一种半导体激光器装置，其与实施例1相比，区别在于半导体激光器装置包括多个模块，每个模块至少包括至少两个半导体激光器发光单元及其复用的一组光束整形组件，以提升输出功率。
下面结合图2A至图3B对此进行具体说明。其中，图2A和图2B分别为根据本发明另一种实施方式的半导体激光器装置的结构示意图，图3A和图3B分 别为图2A中A区域和B区域的放大图。
如图2A至图3B所示，本实施例中的半导体激光器装置可以包括多个模块211、212、…21n，FOC(其包括快轴聚焦柱面镜205-1和慢轴聚焦柱面镜205-2)，以及包括2根光纤206-1和206-2的密排结构206。
其中，多个模块211、212、…21n在垂直方向(快轴方向)上呈阶梯布置，并且每个模块可以包括半导体激光器芯片阵列COS 201、1组光束整形组件(包括FAC 202和SAC 203)和1个反射镜204，其中，COS 201包括芯片201-3及其上的2个激光器发光单元201-1和201-2，这2个激光器发光单元201-1和201-2复用一组FAC 202和SAC 203，从而，在慢轴方向上2个激光器发光单元201-1和201-2分别发出的激光光束分别通过FAC 202和SAC 203，由FAC 202和SAC 203对其进行整形，然后复用同一个反射镜204，通过反射镜204将整形后的激光光束折向FOC 205-1和205-2，然后通过FOC 205-1和205-2分别耦合进2根光纤206-1和206-2。由于多个模块在垂直方向(快轴方向)上呈阶梯布置，通过各模块的反射镜将各模块的激光光束折向同一组FOC 205-1和205-2以耦合进2根光纤206-1和206-2，从而使得2根光纤206-1和206-2中分别耦合进来自n个模块的激光光束，其输出功率成倍增加。
由于半导体激光器光束的特殊性质，光束的发散角在平行于PN结方向和垂直PN结方向并不相同，并且快轴发散角度远远大于慢轴发散角度。所以，半导体激光器的光束整形必须分两步进行，分别对快慢轴依次进行。在本发明实施例中，对于一个所述模块而言，来自两个激光器发光单元201-1和201-2的激光光束201-11和201-12共同经过FAC 202进行快轴方向准直，然后共同经过SAC 203进行慢轴方向准直，而后再经过反射镜204改变激光光束的行进方向。这时，离开反射镜的光束截面形状呈椭圆形，慢轴方向的光束对应椭圆形的长轴，长轴长度为a，快轴方向光束对应椭圆形的短轴，短轴长度为h。对于所述多个模块而言，多个模块彼此之间在水平方向(慢轴方向)上的间距相同且>a，多个模块在垂直方向(快轴方向)上呈阶梯布置，相邻的模块之间在快轴方向上的台阶高度相同且台阶高度>h。这样，所有的模块发出的光束即在离开反射镜204之后在到达FOC 205-1和205-2之前的光束的光斑图案呈在快轴方向紧密堆叠的阵列，如图4B所示。在这之后，图4B中所有光束经过FOC 205-1和205-2(耦合透镜组)分别聚焦成201-11和201-12的汇聚光束，而后分别耦合进光纤206-1 和206-2。
至此，完成从激光器发光单元201-1和201-2发射光束，到光束经过一系列光学元件整形/聚焦/堆叠最终进入光纤206-1和206-2的整个耦合过程。
在本发明的其他实施方式中，不局限于1个COS包含2个激光器发光单元，也可以1个COS包括3个、4个、5个或更多激光器发光单元，此时对应输出的光纤的数量与激光器发光单元的数量相同。
在一些实施方式中，每个模块中的2个激光器发光单元由半导体激光器Bar条分切而来，继承了Bar条的所有结构属性，例如条宽、占空比、每个激光器发光单元的宽度、和激光器发光单元之间的间距。2个激光器发光单元201-1和201-2分别发出独立传播的激光光束201-11和201-12，这两个光束除了激光器发光单元的空间位置不同，其他属性相同，具有相同的传播方向和相同的发散角度，并且在空间传播过程中会相互部分交叠在一起(如图4A所示)。
在本发明的其他实施方式中，FOC也可以是单透镜，或其他起到聚焦作用的透镜。
在一些实施方式中，多个模块可以配置成使从各个模块的激光器发光单元到光纤的光程相等。
在一些实施方式中，多个模块在快轴方向上不呈阶梯布置，可以通过使反射镜具有特定倾斜角度来制造出光束在快轴方向的阶梯，或者采用其他方法，使得各模块的激光光束能够折向同一组FOC 205-1和205-2以耦合进2根光纤，从而使得2根光纤中分别耦合进来自n个模块的激光光束。
【实施例3】
实施例3提供了一种半导体激光器装置。与实施例2相比，区别在于在FOC和光纤之间还设有用以修正激光光束进入光纤后的角度的修正器。如图5A所示，修正器为劈型棱镜307，激光光束经过该劈型棱镜307的转向可以其光轴可以平行于光纤的光轴入射，从而解决入纤前激光光束201-11和201-12汇合的光束的光轴与所对应的光纤光束不平行的问题。这样可以提高光纤输出光束的能量集中度，并且减小光纤中传输的光束溢出光纤纤芯的概率。
在一些实施方式中，如图5B所示，修正器为凹透镜308。
在可选的实施方式中，也可以将光纤的端面构成为倾斜端面以作为修正器 使用。
可选地或进一步地，在本发明的其他实施方式中，慢轴准直透镜(SAC)203和慢轴聚焦柱面镜205-2构成所述双远心光路以修正激光光束进入光纤后的角度。
【实施例4】
实施例4提供了一种半导体激光器装置。与实施例2相比，区别在于通过复用其中一个模块的反射镜，可以在快轴方向上进一步堆叠数个模块以进一步减小体积，增加输出功率。图6A和图6B为根据本发明另一种实施方式的半导体激光器装置的平面结构示意图和立体结构示意图。
如图6A和图6B所示，本实施例中的半导体激光器装置包括：10个模块、FOC(其包括快轴聚焦柱面镜411-1和慢轴聚焦柱面镜411-2)、以及包括5根光纤的密排结构412。其中，每个模块包括1个COS 401-410、1组光束整形组件(包括FAC和SAC)和1个反射镜，每个COS包括5个激光器发光单元，这5个激光器发光单元复用FAC和SAC，以便通过FAC和SAC对5个激光器发光单元分别发出的激光光束进行整形，并通过反射镜改变整形后的激光光束的方向，5个激光器发光单元分别发出的激光光束经过FAC、SAC处理并经过反射镜改向后，通过FOC分别耦合进5根光纤。
其中，第一部分的6个模块的COS 401-406发出的激光光束的传播方向与第二部分的4个模块的COS 407-410发出的激光光束的传播方向相交，并且第二部分的4个模块复用了COS 406对应的反射镜。这样，在包括COS 406的模块中，在COS 406对应的SAC之后和反射镜之前的光路中，进一步在快轴方向呈阶梯堆叠了包括COS 407、408、409、410的模块。
对于第二部分的4个模块中的每一个而言，5个激光器发光单元复用一组FAC、SAC和反射镜，经过FAC和SAC对5个激光器发光单元分别发出的激光光束进行快轴方向准直和慢轴方向准直，经过反射镜改变整形后的激光光束的行进方向，之后，经过COS 406对应的反射镜406-1再次改变激光光束的行进方向，使得第二部分的4个模块的激光光束能够与第一部分的6个模块的激光光束一样折向同一组FOC以耦合进5根光纤。
每个COS(包括5个激光器发光单元)发出的激光光束到5根光纤端面的 光程相等。例如，COS 401发出光束的光程为L401+W401，COS 406发出光束的光程为L406+W406，L401+W401＝L406+W406。
并且，对于多个模块而言，多个模块彼此之间在水平方向(慢轴方向)上的间距相同且>a，多个模块在垂直方向(快轴方向)上呈阶梯布置，相邻的模块之间在快轴方向上的台阶高度相同且台阶高度>h。
在本发明的其他实施方式中，不局限于1个COS包含5个激光器发光单元，也可以1个COS包括2个、3个、4个或更多激光器发光单元，此时对应输出的光纤的数量与激光器发光单元的数量相同。
在本发明的其他实施方式中，总的模块数量也不局限于10个，第一部分的模块数量也不局限为6个，第二部分的模块数量也不局限为4个，可以根据需要设置任意数量的模块，并且其中一部分为第一部分的模块，另一部分为第二部分的模块。
在一些实施方式中，装置包括不止两部分的模块，例如，可以在堆叠第二部分的模块的基础上，进一步地在堆叠第三部分甚至更多部分的模块。
在一些实施方式中，可以复用不止一个模块的反射镜，例如装置可以包括第三部分的模块，其复用第一部分中的另一个模块的反射镜，依次类推。
在本发明的一些实施方式中，慢轴准直透镜和慢轴聚焦柱面镜构成双远心光路以修正激光光束进入光纤后的角度。
【实施例5】
实施例5提供了一种半导体激光器装置。与实施例2相比，区别在于在快轴方向平行叠加多个模块，省略了反射镜，并且所有模块复用1个SAC，使得半导体激光器装置的集成度更高，体积更小。
具体而言，如图7所示，本实施例中的半导体激光器装置包括：5个模块，每个模块包括1个COS 501和1个FAC 502，COS 501包括5个激光器发光单元，这5个激光器发光单元复用1个FAC 502；SAC 503和FOC耦合透镜组(其包括快轴聚焦柱面镜504-1和慢轴聚焦柱面镜504-2)，SAC 503设置在模块和FOC之间，5个模块复用1个SAC 503和FOC 504-1和504-2；包括5根光纤的密排结构505，每个COS 501中的5个激光器发光单元发出的激光光束复用1个FAC，5个COS 501发出的激光光束共同依次通过同一个SAC和FOC的整 形、聚焦，然后分别耦合进这5根光纤中。
在本实施例中，每个COS(包括5个激光器发光单元)发出的激光光束到5根光纤端面的光程相等。
在本发明的一些实施方式中，不局限于1个COS包含5个激光器发光单元，也可以1个COS包括2个、3个、4个或更多激光器发光单元，此时对应输出的光纤的数量与激光器发光单元的数量相同。
在本发明的一些实施方式中，模块数量也不局限于5个，可以根据需要设置任意数量。
在本发明的其他实施方式中，FOC也可以是单透镜，或其他起到聚焦作用的透镜。
在本发明的一些实施方式中，慢轴准直透镜503和慢轴聚焦柱面镜504-2构成双远心光路以修正激光光束进入光纤后的角度。
【实施例6】
实施例6提供了一种半导体激光器装置。与实施例2相比，区别在于在FOC与光束整形组件之间设置光谱合束器或偏振合束器，以便在空间合束的基础上进一步结合光谱合束或偏振合束。
下面结合图8对此进行具体说明。如图8所示，本实施例中的半导体激光器装置可以包括多个模块611、612、…61n和611’、612’、…61n’，光谱合束器(例如，双色分光镜)606，FOC透镜组：快轴聚焦柱面镜607-1和慢轴聚焦柱面镜607-2，以及包括2根光纤的密排结构608。
其中，多个模块611、612、…61n在垂直方向(快轴方向)上呈阶梯布置，在水平方向(慢轴方向)上平行布置且间距相同，并且每个模块可以包括半导体激光器芯片阵列COS 601、1组光束整形组件(包括FAC 602和SAC 603)和1个反射镜604，其中，COS 601包括2个激光器发光单元，这2个激光器发光单元复用一组FAC 602和SAC 603，从而，在慢轴方向上2个激光器发光单元分别发出的激光光束分别通过FAC 602和SAC 603，由FAC 602和SAC 603对其进行整形，然后复用同一个反射镜604，通过反射镜604将整形后的激光光束折向双色分光镜606。模块611、612、…61n发出的激光光束均为具有第一波长的激光光束。
多个模块611’、612’、…61n’的结构和布局与模块611、612、…61n一样，区别在于模块611’、612’、…61n’所发出的激光光束均为具有第二波长的激光光束，并且，在模块611’、612’、…61n’与双色分光镜606之间还增加设置反射镜605以改变激光光束的行进方向将其折向双色分光镜606。其中，作为双色分光镜606，采用透射第一波长的光并反射第二波长的光的反射镜。
由于双色分光镜606能够透射具有第一波长的激光光束，反射具有第二波长的激光光束，因此，来自模块611、612、…61n的具有第一波长的激光光束透过双色分光镜606，而来自模块611’、612’、…61n’的具有第二波长的激光光束经过双色分光镜606的反射与来自模块611、612、…61n的激光光束堆叠在一起得到合并，合并后的激光光束之后通过FOC 607-1和607-2分别耦合进对应的光纤。这样，本实施例中的半导体激光器装置在空间合束的基础上可以进一步进行光谱合束。
在本实施例中，反射镜604和605均起改变激光光束的行进方向的作用，可以根据实际需要省略或者增加，以便于在空间上将来自不同位置的激光光束合并在一起。
在一些实施方式中，可以采用偏振分光棱镜(PBS)替换双色分光镜606，从而将空间合束与偏振合束结合使用。此时，模块611、612、…61n发出的激光光束可以均为p光，模块611’、612’、…61n’所发出的激光光束可以均为s光。PBS能够透射p光反射s光，因此经过PBS之后，来自模块611、612、…61n的激光光束与来自模块611’、612’、…61n’的激光光束堆叠在一起得到合并，实现偏振合束。
在可选的实施方式中，也可以在FOC与光束整形组件(具体可以是SAC)之间按顺序增加设置光谱合束器和偏振合束器，以在空间合束的基础上进一步结合光谱合束和偏振合束。例如，首先，通过双色分光镜按照上述方式将不同波长的激光光束叠加在一起，然后通过PBS按照上述方式将经过光谱合束的p光和s光叠加在一起。
在本发明的其他实施方式中，不局限于1个COS包含2个激光器发光单元，也可以1个COS包括3个、4个或更多激光器发光单元，此时对应输出的光纤的数量与激光器发光单元的数量相同。
在本发明的其他实施方式中，FOC也可以是单透镜、或其他起到聚焦作用 的透镜。
在本发明的一些实施方式中，可以通过慢轴准直透镜和慢轴聚焦柱面镜构成双远心光路，以修正激光光束进入光纤后的角度。
本发明说明书中使用的术语和措辞仅仅为了举例说明，并不意味构成限定。本领域技术人员应当理解，在不脱离所公开的实施方式的基本原理的前提下，对上述实施方式中的各细节可进行各种变化。因此，本发明的保护范围只由权利要求确定，在权利要求中，除非另有说明，所有的术语应按最宽泛合理的意思进行理解。

Claims (16)

  1. 一种半导体激光器装置，其特征在于，包括：
    至少两个激光器发光单元；
    光束整形组件，所述至少两个激光器发光单元复用一组所述光束整形组件，以便通过一组所述光束整形组件对所述至少两个激光器发光单元分别发出的激光光束进行整形；
    光纤耦合器；以及
    至少两根光纤，所述至少两个激光器发光单元分别发出的激光光束经过一组所述光束整形组件处理后通过所述光纤耦合器分别耦合进所述至少两根光纤；
    其中，所述光纤的数量等于所述激光器发光单元的数量。
  2. 如权利要求1所述的半导体激光器装置，其特征在于，所述至少两个激光器发光单元分别发出的激光光束具有相同的传播方向和相同的发散角度。
  3. 如权利要求2所述的半导体激光器装置，其特征在于，所述激光器发光单元通过分切半导体激光器Bar条制得。
  4. 如权利要求1所述的半导体激光器装置，其特征在于，所述光束整形组件包括快轴准直透镜和慢轴准直透镜。
  5. 如权利要求1所述的半导体激光器装置，其特征在于，
    所述至少两个激光器发光单元与其复用的一组所述光束整形组件作为一个模块，所述模块还包括反射镜，用于改变经过一组所述光束整形组件处理后的激光光束的方向，
    其中，所述半导体激光器装置包括多个所述模块。
  6. 如权利要求5所述的半导体激光器装置，其特征在于，多个所述模块配置成使从各个所述模块的激光器发光单元到所述光纤的光程相等。
  7. 如权利要求5所述的半导体激光器装置，其特征在于，多个所述模块在水平方向上的间距相同，所述间距大于第一值，所述第一值表示离开所述反射镜的光束的椭圆形截面形状的长轴长度。
  8. 如权利要求5所述的半导体激光器装置，其特征在于，所述多个模块在快轴方向上呈阶梯布置，相邻的所述模块之间在快轴方向上的台阶高度相同，所述台阶高度大于第二值，所述第二值表示离开所述反射镜的光束的椭圆形截面形状的短轴长度。
  9. 如权利要求5所述的半导体激光器装置，其特征在于，多个所述模块构成为：
    多个所述模块中的第一部分的激光器发光单元发出的激光光束的传播方向与多个所述模块中的第二部分的激光器发光单元发出的激光光束的传播方向相交，并且
    多个所述模块中的第二部分复用多个所述模块中的第一部分中的一个模块的反射镜。
  10. 如权利要求1所述的半导体激光器装置，其特征在于，
    所述至少两个激光器发光单元与其复用的一组所述光束整形组件作为一个模块，
    其中，所述半导体激光器装置包括多个所述模块，所述多个模块在快轴方向上平行布置；
    其中，所述光束整形组件包括快轴准直透镜；
    其中，在多个所述模块与所述光纤耦合器之间设置有慢轴准直透镜，多个所述模块复用所述慢轴准直透镜。
  11. 如权利要求1所述的半导体激光器装置，其特征在于，在所述光纤耦合器和所述光纤之间设有用以修正激光光束进入光纤后的角度的修正器。
  12. 如权利要求11所述的半导体激光器装置，其特征在于，所述修正器为 劈型棱镜或凹透镜
    或者，
    所述光纤的端面构成为倾斜端面作为所述修正器使用。
  13. 如权利要求4或10所述的半导体激光器装置，其特征在于，所述光纤耦合器包括慢轴聚焦柱面镜和快轴聚焦柱面镜。
  14. 如权利要求13所述的半导体激光器装置，其特征在于，所述慢轴准直透镜和所述慢轴聚焦柱面镜构成双远心光路以修正激光光束进入光纤后的角度。
  15. 如权利要求1所述的半导体激光器装置，其特征在于，所述至少两根光纤采用密排结构或陶瓷插芯的形式固定。
  16. 如权利要求1所述的半导体激光器装置，其特征在于，还包括位于所述光纤耦合器与所述光束整形组件之间的光谱合束器和/或偏振合束器。
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