WO2022033178A1 - 半导体沉积方法及半导体沉积系统 - Google Patents

半导体沉积方法及半导体沉积系统 Download PDF

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Publication number
WO2022033178A1
WO2022033178A1 PCT/CN2021/101334 CN2021101334W WO2022033178A1 WO 2022033178 A1 WO2022033178 A1 WO 2022033178A1 CN 2021101334 W CN2021101334 W CN 2021101334W WO 2022033178 A1 WO2022033178 A1 WO 2022033178A1
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Prior art keywords
air outlet
thickness
deposited film
deposition
outlet panel
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PCT/CN2021/101334
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English (en)
French (fr)
Inventor
邱立峰
张丽霞
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Changxin Memory Technologies Inc
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Changxin Memory Technologies Inc
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Priority to US17/441,850 priority Critical patent/US20230054190A1/en
Publication of WO2022033178A1 publication Critical patent/WO2022033178A1/zh
Anticipated expiration legal-status Critical
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Definitions

  • the present disclosure relates to, but is not limited to, semiconductor deposition methods and semiconductor deposition systems.
  • a chemical vapor deposition (CVD) process is mainly used to form a thin layer or film on a semiconductor substrate (eg, a wafer).
  • a semiconductor substrate eg, a wafer.
  • a chemical vapor deposition process a semiconductor substrate is exposed to a precursor gas that reacts at the surface of the semiconductor substrate and deposits reaction products thereon.
  • the thin film deposited on the semiconductor substrate with flat surface generally has poor uniformity.
  • the unevenness of the thin film deposited on the semiconductor substrate will affect subsequent processes, such as uneven etching or uneven chemical polishing of the semiconductor substrate, which ultimately affects the quality of semiconductor products.
  • the present disclosure provides a semiconductor deposition method, including: providing a deposition device, the deposition device including a shower head for deposition; detecting whether a deposited film has a thickness defect, the thickness defect including the thickness difference of the deposited film; Position; based on the position of the thickness defect, adjust the structure of the air outlet panel in the shower head to adjust the distance between the air outlet in the air outlet panel and the deposited film.
  • the semiconductor deposition method provided by the present disclosure determines whether there is a thickness difference in the deposited film by detecting whether there is a thickness defect in the deposited film, and correspondingly adjusts the position of the air outlet in the air outlet panel according to the position of the thickness defect, Thus, the existing thickness difference of the deposited film is improved, and the thickness uniformity of the deposited film on the semiconductor substrate is effectively improved.
  • Also provided in the present disclosure is a semiconductor deposition system.
  • a semiconductor deposition system includes: a deposition apparatus and a control system; the deposition apparatus includes a shower head, and a stage for mounting a semiconductor substrate; the control system includes a detection module and a control module; the detection module is arranged on the On the deposition equipment, it is used to detect whether there is a thickness defect in the deposited film on the semiconductor substrate; the control module is connected to the shower head to adjust the structure of the air outlet panel in the shower head, so as to adjust the air outlet in the air outlet panel and the deposition film. distance between.
  • this embodiment adjusts the structure of the air outlet panel according to the judgment result of the thickness of the deposited film, so as to adjust the position of the air outlet hole in the air outlet panel, thereby improving the thickness of the deposited film, thereby increasing the thickness of the deposited film. Thickness uniformity of deposited films.
  • FIG. 1 is a schematic flowchart of a semiconductor deposition method according to a first embodiment of the present disclosure
  • FIGS. 2 to 5 are schematic structural diagrams of the deposition apparatus provided by the first embodiment of the present disclosure.
  • FIG. 6 is a schematic diagram of the principle of obtaining thickness defects according to the first embodiment of the present disclosure.
  • FIG. 7 to 9 are schematic structural diagrams of a deposition apparatus according to a second embodiment of the present disclosure.
  • FIG. 10 is a schematic flowchart of a semiconductor deposition method provided by a third embodiment of the present disclosure.
  • FIG. 11 is a schematic structural diagram of a semiconductor deposition system provided by a fourth embodiment of the present disclosure.
  • the thin film deposited on the semiconductor substrate with flat surface generally has poor uniformity.
  • the unevenness of the thin film deposited on the semiconductor substrate will affect subsequent processes, such as uneven etching or uneven chemical polishing of the semiconductor substrate, which ultimately affects the quality of semiconductor products.
  • a first embodiment of the present disclosure provides a semiconductor deposition method, including: providing a deposition device, the deposition device including a shower head for deposition; detecting whether a deposited film has a thickness defect, where the thickness defect includes a difference in thickness of the deposited film; The position of thickness defect; based on the position of thickness defect, adjust the structure of the air outlet panel in the shower head to adjust the distance between the air outlet in the air outlet panel and the deposited film.
  • FIG. 1 is a schematic flowchart corresponding to each step of the semiconductor deposition method provided by the first embodiment of the present disclosure, and the semiconductor deposition method of this embodiment will be specifically described below.
  • a semiconductor deposition method includes the following steps:
  • Step A101 providing deposition equipment, the deposition equipment includes a shower head for deposition.
  • the plane of the air outlet of the shower head of the conventional chemical vapor deposition equipment is a plane arranged parallel to the semiconductor substrate, the plane of the air outlet of the shower head is facing the semiconductor substrate, and the shower head is discharged outside
  • the gases react at the surface of the semiconductor substrate and deposit reaction products thereon.
  • the thin films formed by surface deposition of semiconductor substrates are thin in the middle and thick at the edges.
  • atmospheric pressure chemical vapor deposition (APCVD) equipment is used as an example, in addition, plasma enhanced chemical vapor deposition (PECVD) equipment or metal organic chemical vapor deposition (metal organic chemical vapor deposition) equipment may also be used.
  • PECVD plasma enhanced chemical vapor deposition
  • MOCVD metal organic chemical vapor deposition
  • the uniformity of the deposited film can be improved by the special-shaped shower head and the corresponding deposition method.
  • the shower head 10 includes a housing 11 .
  • the casing 11 includes a first end and a second end disposed opposite to each other, and the first end and the second end are respectively the upper part and the lower part of the casing 11 as shown in FIG. 2 .
  • the first end of the housing 11 is provided with an air inlet 111 connected to the air intake pipe 17
  • the second end of the housing 11 is provided with an air outlet panel 113 .
  • a plurality of air outlet holes 114 are provided on the board surface of the air outlet panel 113 , and the middle part of the board surface of the air outlet panel 113 is farther away from the first end than the edge part.
  • the reaction gas enters the inner cavity of the housing 11 through the air inlet 111, and is discharged to the outside through the air outlet 114 of the air outlet panel 113. It is blown to the semiconductor substrate and deposited on the surface of the semiconductor substrate to form a deposition film.
  • the middle part of the air outlet panel 113 is farther from the first end than the edge part, the middle part of the air outlet panel 113 is close to the semiconductor substrate relative to the edge part of the air outlet panel 113, during deposition, it is possible to More particles are deposited in the middle, and fewer particles are deposited from the middle to the edge region.
  • the thickness of the middle part of the thin film deposited on the semiconductor substrate can be relatively increased, so that the uniformity of the thin film deposited on the surface of the semiconductor substrate can be improved.
  • the air outlet panel 113 is a cone structure or a truncated cone structure. In this way, each part of the thin film deposited on the surface of the semiconductor substrate is relatively uniform.
  • the surface of the showerhead 10 that is parallel to the semiconductor substrate is selected as the reference surface 115 .
  • the angle of the air outlet panel 113 of the pyramid structure can be Adjustment, the angle a formed between the tapered surface of the air outlet panel 113 and the reference surface 115 can be adjusted.
  • the angle a is larger, it means that the middle part of the air outlet panel 113 is closer to the semiconductor substrate than the edge part. The larger the degree is; the smaller the included angle a is, the smaller the degree that the middle portion of the air outlet panel 113 is closer to the semiconductor substrate relative to the edge portion.
  • the air outlet panel may be composed of a plurality of parallel parallel plates, and this embodiment does not specifically limit the structure of the air outlet panel.
  • the main structure 116 of the housing 11 can be, for example, a cylinder, a hemisphere, or a combination of a cylinder and a hemisphere. Structure, the projection of the casing 11 on the semiconductor substrate 30 is adapted to the shape of the surface of the semiconductor substrate 30 , so that the thin films can be uniformly deposited on each part of the surface of the semiconductor substrate 30 .
  • the main structure 116 of the housing 11 is not limited to the above structure, and may also be other irregular structures, which will not be described in detail here.
  • step A102 detecting whether there is a thickness defect in the deposited film.
  • Thickness defects include differences in the thickness of the deposited films.
  • the detection of the thickness defect of the deposited film is realized in the process of depositing the semiconductor substrate, and the structure of the air outlet panel in the showerhead can be changed at any time according to the thickness of the deposited film; in other In the embodiment, the thickness defect of the deposited film can also be measured by the measuring machine, and the structure of the air outlet panel in the shower head can be feedback adjusted according to the measurement result.
  • step A102 includes sub-step A102-1 of detecting the thickness of the area to be inspected in the deposited film and sub-step A102-2 of determining whether the deposited film has the thickness defect based on the thickness of the area to be inspected.
  • Sub-step A102-1 detecting the thickness of the area to be detected in the deposited film.
  • the to-be-detected area includes a first detection area at a first distance from the center of the deposited film and a second detection area at a second distance from the center of the deposited film, the second distance being greater than the first distance.
  • the first detection area is set at the center of the deposited film
  • the second detection area is set at the edge of the deposited film.
  • the thickness of the deposited film in the first detection area and the second detection area may be acquired by arranging sensors on the air outlet panels corresponding to the first detection area and the second detection area.
  • multiple detection areas such as the third detection area and the fourth detection area are also included.
  • the thickness of each position of the deposited film can be comprehensively and accurately obtained. , the subsequent judgment of whether the deposited film has thickness defects is more convincing.
  • Sub-step A102-2 based on the thickness of the area to be detected, determine whether the deposited film has the thickness defect.
  • the deposited thin film Based on the thickness of the deposited thin film detected by the first detection area and the second detection area, it is determined whether the deposited thin film has a thickness defect.
  • the first detection area is set at the center of the deposited film
  • the second detection area is set at the edge of the deposited film
  • the thickness of the deposited film detected based on the first detection area and the second detection area is based on the deposition
  • the middle thickness and edge thickness of the film are used to judge whether there are thickness defects in the deposited film.
  • the thickness difference of each area to be inspected exceeds a preset threshold range, and if it exceeds the preset threshold value range, it indicates the upper and lower positions of the deposited film There is a large thickness difference, that is, there are thickness defects in the deposited film.
  • the body radius of the air outlet panel is R, because the body of the air outlet panel does not change, that is, R is a fixed value; Cannot move, that is, y is a fixed value.
  • the distance between the middle position of the air outlet panel and the machine is x1. Since the middle part of the air outlet panel can move, x1 is a variable, and the inclination angle of the air outlet panel is ⁇ .
  • the values y and x1 read by the sensors at the edge position and the middle position of the air outlet panel are obtained, and the inclination angle ⁇ of the air panel is calculated based on the formula (1).
  • the thickness difference ⁇ of the position to be detected of the deposited film is calculated.
  • a third detection area is also included, and the thickness detection data x2 in the third detection area is similar to x1 for data detection, and the specific process is Same as above, without further elaboration here.
  • Step A103 acquiring the position where the thickness defect exists.
  • the detection area where the deposited film has thickness defects is determined, and the position of the sensor corresponding to the detection area is obtained, that is, the position of the thickness defect is obtained.
  • Step A104 adjusting the distance between the air outlet and the deposited film based on the position of the thickness defect.
  • the structure of the air outlet panel 113 in the shower head is adjusted to adjust the distance between the air outlet hole 114 in the air outlet panel 113 and the deposited film.
  • the distance between the air outlet hole 114 in the air outlet panel 113 and the deposited film is adjusted by adjusting the middle part of the air outlet panel 113 to move toward or away from the deposited film.
  • the air outlet panel 113 is adjustably disposed at the second end of the housing 11 .
  • the air outlet panel 113 with different inclination angles can be adjusted according to the actual situation, and the distance between the air outlet hole 114 and the deposited film can be adjusted.
  • the middle part of the air outlet panel 113 with different inclination angles is different from the first end relative to the edge part, that is, the degree of being close to the surface of the semiconductor substrate during chemical vapor deposition is different.
  • the middle part can be adjusted to be farther from the air outlet panel 113 at the first end than the edge part, that is, the middle part of the air outlet panel 113 can be adjusted to be more distant. Protruding outward, the middle part of the air outlet panel 113 is closer to the surface of the semiconductor substrate 30, so that the thickness of the middle part of the thin film deposited on the surface of the semiconductor substrate will be relatively increased.
  • the air outlet panel 113 whose middle part is farther away from the first end than the edge part can be adjusted, that is, the air outlet panel 113 can be adjusted.
  • the degree of outward convexity of the middle part of the air outlet panel 113 is reduced, so that the degree of the middle part of the air outlet panel 113 close to the surface of the semiconductor substrate is reduced, so that the thickness of the middle part of the film deposited on the surface of the semiconductor substrate will be relatively reduced.
  • detecting whether there is a thickness defect in the deposited film in step A102 includes real-time detection and timing detection.
  • adjusting the distance between the air outlet and the deposited film in step A104 also includes real-time adjustment and timing adjustment.
  • the real-time adjustment means that in the process of film deposition, the inclination angle ⁇ of the air outlet panel 113 is adjusted in real time according to the detected thickness difference ⁇ .
  • Timing detection is used for the method of segmented deposition, that is, the process of film deposition is divided into multiple stages, and part of the film is deposited in each stage, and the relationship between the inclination angle ⁇ of the air outlet panel and the thickness of the deposited film is obtained by collecting deposition data.
  • h K* ⁇ + ⁇
  • h is the change value of the corresponding thickness after adjusting the angle ⁇
  • the inclination of the air outlet panel 113 in the next stage of deposition process is improved by detecting the thickness difference of the deposited film angle ⁇ , thereby improving the uniformity of the thickness of the deposited film.
  • the thickness of the deposited film after the deposition can be detected by the measuring machine, the thickness difference h of the deposited film can be measured by the measuring machine, and then adjusted according to the relationship between the thickness difference h and the angle ⁇
  • the inclination angle ⁇ of the air outlet panel in the shower head can achieve the uniformity of the deposited film formed subsequently.
  • the topography of the deposited film is improved by adjusting the distance between the middle position of the air outlet panel 113 and the edge portion, so as to avoid the thickness defect of high edge and low middle thickness in the deposited film. That is, by adjusting the vent hole corresponding to the thickness defect position to be close to or away from the deposited film.
  • the central position of the air outlet panel can also be fixed, and the shape of the deposited film can be improved by adjusting the distance between the edge of the air outlet panel relative to the central position, that is, by adjusting the thickness defect position corresponding to the position of the air outlet and the other The vent holes are either close to or far from the deposited film.
  • this embodiment determines whether there is a thickness difference in the deposited film by detecting whether there is a thickness defect in the deposited film, and adjusts the position of the air outlet hole in the air outlet panel according to the position of the thickness defect, thereby improving the deposited film.
  • the thickness difference that has occurred can effectively improve the thickness uniformity of the deposited film on the semiconductor substrate.
  • a second embodiment of the present disclosure relates to a semiconductor deposition method.
  • the difference from the first embodiment is that the structure of the shower head in the deposition apparatus applied in this embodiment and the manner of adjusting the structure of the shower head are different from those of the first embodiment.
  • This embodiment provides two methods for adjusting the air outlet panel, the details are as follows:
  • Method 1 A push assembly is arranged in the middle of the air outlet panel, and the length of the push assembly is adjusted to move the middle part of the air outlet panel toward or away from the deposited film.
  • the deposition apparatus further includes a drive assembly 12 , the air outlet panel 113 is a deformable plate, the drive assembly 12 is mounted on the housing 11 , and the drive assembly 12 is used to drive the middle of the deformable plate
  • the part is telescopically moved in a direction away from or close to the first end.
  • the deformable plate is, for example, an elastic panel or a flexible material plate, as long as it can be deformed correspondingly under the pushing of the driving component 12 , which is not limited herein.
  • the middle part of the deformable plate is driven to move away from the first end by the driving component 12, so that the deformable plate is deformed.
  • the angle a formed between them becomes larger, which can increase the degree that the middle part of the air outlet panel 113 is far away from the first end relative to the edge part; on the contrary, when the driving assembly 12 is retracted, the elastic force After recovery, the angle a formed between the surface of the air outlet panel 113 and the reference surface 115 becomes smaller.
  • the drive assembly 12 includes a nut 121 disposed at the first end, and a screw rod 122 cooperating with the nut 121 .
  • One end of the screw rod 122 is located outside the casing 11 , and the other end of the screw rod 122 extends into the casing 11 and is connected to the middle part of the air outlet panel 113 .
  • the driving assembly 12 includes a push-pull rod. The push-pull rod penetrates the casing 11 and extends into the casing 11. Connected in the middle.
  • the drive assembly 12 includes a telescopic adjustment rod disposed in the housing 11 , and the end of the telescopic adjustment rod is connected to the middle part of the air outlet panel 113 .
  • the drive assembly includes a first push assembly 13 and a second push assembly 14 and a third push assembly 15 .
  • the first push assembly 13 , the second push assembly 14 and the third push assembly 15 are disposed on the housing 11
  • the air outlet panel 113 includes a peripheral panel 1131 and a first middle panel 1132 located in a central area of the peripheral panel 1131 .
  • the peripheral panel 1131 is fixed on the second end of the casing 11
  • a first movable port 1133 is provided in the middle of the peripheral panel 1131 .
  • a first wind shielding sleeve 1134 is disposed around the edge of the first middle panel 1132 .
  • the first wind shield 1134 is movably disposed in the first movable port 1133 .
  • the first pushing assembly 13 is connected to the first middle panel 1132 for pushing the first middle panel 1132 away from or close to the first end.
  • the air outlet panel 113 further includes a second middle panel 1135 .
  • the middle portion of the first middle panel 1132 is provided with a second movable port 1136 .
  • the edge of the second middle panel 1135 is provided with a second windshield sleeve 1137 , the second windshield sleeve 1137 is movably arranged in the second movable port 1136 , and the second push assembly 14 is connected with the second middle panel 1135 for for pushing the second middle panel 1135 away from or close to the first end.
  • the air outlet panel 113 further includes a third middle panel 1138 .
  • the middle portion of the second middle panel 1135 is provided with a third movable port 1139 .
  • a third windshield sleeve 11391 is arranged around the edge of the third middle panel 1138 .
  • the third windshield sleeve 11391 is movably disposed in the third movable port 1139 .
  • the third pushing assembly 15 is connected to the third middle panel 1138 for pushing the third middle panel 1138 away from or close to the first end.
  • the outer wall of the first air guide sleeve is provided with, for example, guide ribs (not shown in the figure), and the first air guide sleeve is provided with guide ribs (not shown in the figure).
  • the wall of the movable port 1133 is, for example, provided with a concave portion (not shown in the figure) that is slidably matched with the guide rib.
  • the first air guide sleeve is made into a telescopic sleeve body, one end of the sleeve body is connected to the wall of the first movable port 1133 , and the other end of the sleeve body surrounds the plate of the first middle panel 1132 Circumferential setting.
  • the sleeve body is correspondingly elongated or shortened.
  • the second push assembly 14 and the third push assembly 15 are similar to the first push assembly 13 , and will not be repeated here.
  • the second windshield sleeve 1137 and the third windshield sleeve 11391 are also similar to the arrangement of the first windshield sleeve 1134 , and will not be repeated here.
  • This example takes the method of parallel plates as an example for specific introduction, and introduces the structure in which three parallel plates move the middle part of the air outlet panel toward or away from the deposited film through three push components.
  • the parallel plates The number may not be limited to three, and may be two or more parallel plates. It should be noted that, when the number of middle panels of the air outlet panel 113 is larger, and the panels are sequentially set from the periphery to the middle, the uniformity of the thin film deposited on the surface of the semiconductor substrate 30 can be improved.
  • the number of the middle panels of the air outlet panel 113 is not limited to the first middle panel 1132, the second middle panel 1135 and the third middle panel 1138, and there may also be a fourth middle panel and a fifth middle panel, etc. Set according to actual needs.
  • the shape of each panel is not limited to a rectangle, and other shapes such as a cone or a hemisphere are applicable.
  • Method 2 The middle part of the air outlet panel is provided with a connecting part, and the edge of the air outlet panel is provided with a sliding part. By adjusting the air outlet panel to slide based on the sliding part, the middle part of the air outlet panel is moved toward or away from the deposited film. .
  • the air outlet panel 113 includes two rotating panels 11392 and two wind shielding flexible panels 11393 .
  • the second end of the housing 11 is provided with an air outlet 112 .
  • One end of the two rotating panels 11392 is rotatably connected through a connecting portion, and the other end of the rotating panels 11392 is slidably fitted with the second end of the housing 11 through a sliding member.
  • One of the windshield flexible plates 11393 is connected to one side and the second end of the two rotating panels 11392 respectively, and the other windshield flexible plate 11393 is connected to the other side and the second end of the two rotating panels 11392 respectively.
  • Two windshield flexible plates 11393 and two rotating panels 11392 surround the air outlet 112 .
  • the rotating panel 11392 is provided with an air outlet 114 .
  • the air outlet 114 may or may not be provided on the flexible board 11393, which is not limited herein. In this way, by adjusting the angle between the two rotating panels 11392, it is possible to adjust the degree that the connecting portion (corresponding to the middle portion of the air outlet panel 113) of the two rotating panels 11392 is far away from the first end relative to the edge portion.
  • this embodiment determines whether there is a thickness difference in the deposited film by detecting whether there is a thickness defect in the deposited film, and adjusts the position of the air outlet hole in the air outlet panel according to the position of the thickness defect, thereby improving the deposited film.
  • the thickness difference that has occurred can effectively improve the thickness uniformity of the deposited film on the semiconductor substrate.
  • a third embodiment of the present disclosure relates to a semiconductor deposition method. Different from the first embodiment, this embodiment is also used to obtain a thickness distribution map after detecting the thickness of the deposited film, according to the thickness distribution map to determine whether there is a thickness defect in the deposited film, and the detection accuracy is higher.
  • a semiconductor deposition method comprising the following steps:
  • Step B101 providing deposition equipment.
  • Step B102 detecting the thickness of each position in the deposited thin film to obtain a thickness distribution map of the deposited thin film. Specifically, the thickness of the position corresponding to the air outlet holes in the deposited film is detected, and the thickness distribution map is obtained based on the thickness of the positions corresponding to the air outlet holes in the deposited film and the arrangement of the air outlet holes.
  • a sensor for detecting distance is arranged near each air outlet, and is used to measure the thickness of the deposited film at the corresponding position of each air outlet. By setting multiple sensors, the thickness of each position of the deposited film can be accurately obtained. .
  • Step B103 based on the thickness distribution map, obtain the position where the thickness defect exists. It is more accurate to obtain the thickness defect position through the thickness distribution map.
  • Step B104 based on the position of the thickness defect, adjust the distance between the air outlet and the deposited film.
  • the structure of adjusting the air outlet panel in the shower head is also included, so as to adjust whether the air outlet in the air outlet panel emits air. If there are local defects in the deposited film, that is, the difference between the local thickness and the thickness of other parts is too large, even if the distance between the air outlet and the deposited film is adjusted, it is still difficult to compensate for the thickness difference in the local area. At this time, by closing the air outlet at the corresponding position , it is more convenient to improve the thickness defect of the local position.
  • this embodiment determines whether there is a thickness difference in the deposited film by detecting whether there is a thickness defect in the deposited film, and adjusts the position of the air outlet hole in the air outlet panel according to the position of the thickness defect, thereby improving the deposited film.
  • the thickness difference that has occurred can effectively improve the thickness uniformity of the deposited film on the semiconductor substrate.
  • this embodiment can be implemented in cooperation with the first embodiment.
  • the relevant technical details mentioned in the first embodiment are still valid in this embodiment, and the technical effects that can be achieved in the first embodiment can also be achieved in this embodiment. In order to reduce repetition, details are not repeated here. Correspondingly, the relevant technical details mentioned in this embodiment can also be applied in the first embodiment.
  • a fourth embodiment of the present disclosure relates to a semiconductor deposition system.
  • the semiconductor deposition system includes: deposition equipment 300 and control system 400 .
  • the deposition apparatus 300 includes a shower head 301 and a carrier 302 for mounting a semiconductor substrate;
  • the control system 400 includes a detection module 402 and a control module 401;
  • the detection module 402 is arranged on the deposition apparatus 300 and is used for detecting the semiconductor substrate Whether there is a thickness defect in the deposited film on the surface;
  • the control module 401 is connected to the shower head 301 for adjusting the structure of the air outlet panel in the shower head 301 used for deposition, so as to adjust the distance between the air outlet in the air outlet panel and the deposited film. .
  • the reaction gas enters the inner cavity of the casing through the air inlet, and is discharged outward through the air outlet hole of the air outlet panel, and is blown toward the semiconductor substrate.
  • a thin film is deposited on the surface of a semiconductor substrate.
  • the middle part of the air outlet panel is farther away from the first end than the edge part, the middle part of the air outlet panel is closer to the semiconductor substrate than the edge part of the air outlet panel.
  • the thickness of the middle portion of the thin film deposited on the semiconductor substrate can be relatively increased, so that the uniformity of the thin film deposited on the surface of the semiconductor substrate can be improved.
  • the deposition apparatus 300 may be a plasma-enhanced chemical vapor deposition (PECVD) apparatus, an atmospheric pressure chemical vapor deposition (APCVD) apparatus, or a metal organic chemical vapor deposition (metal organic chemical vapor deposition) apparatus. , MOCVD) equipment.
  • PECVD plasma-enhanced chemical vapor deposition
  • APCVD atmospheric pressure chemical vapor deposition
  • MOCVD metal organic chemical vapor deposition
  • the carrying table 302 is embodied as a suction cup, and the diameter of the suction cup is substantially the same as or similar to that of the showerhead 301 and can move vertically along the axis.
  • the movable stage 302 is used to adjust its position in the vacuum chamber.
  • a heating or cooling system may be provided in the stage 302 to heat or cool the semiconductor substrate and/or be configured to heat or cool the walls of the vacuum chamber.
  • Plasma-enhanced chemical vapor deposition is a process that deposits thin films of various materials on semiconductor substrates at temperatures lower than those of standard chemical vapor deposition (CVD).
  • a direct current (DC) power source or a radio frequency (RF) power source can be attached to the vacuum chamber to generate plasma in a plasma-enhanced chemical vapor deposition process.
  • deposition is achieved by introducing a reactive gas between parallel electrodes (RF energized electrodes or DC electrodes and grounded electrodes).
  • the chamber may have coils to generate a higher density inductively coupled plasma.
  • the showerhead 301 of the above-described embodiment plays an important role in the uniformity of the resulting film.
  • Electrode-to-electrode capacitive coupling excites the reactive gas into a plasma, which initiates a chemical reaction and causes the reaction product to deposit on the semiconductor substrate.
  • the semiconductor substrate placed on the ground electrode can be heated to 250°C to 350°C depending on specific film requirements.
  • Standard chemical vapor deposition without plasma excitation may require higher temperatures, such as heating to the range between 600°C and 800°C. Since the temperatures of chemical vapor deposition can damage the fabricated device, lower deposition temperatures are critical in many applications. Films typically deposited using plasma enhanced chemical vapor deposition are silicon nitride (SiN), silicon oxide (SiO), silicon oxynitride (SiON), silicon carbide (SiC), and amorphous silicon ( ⁇ -Si). Silane (SiH) is combined with an oxygen source gas to form silicon dioxide, or silane is combined with a nitrogen source gas to form silicon nitride.
  • the oxide layer ie, plasma enhanced ethyl orthosilicate
  • the oxide layer is formed by a plasma enhanced chemical vapor deposition process using a tetra ethyl orthosilicate (TEOS) material.
  • TEOS tetra ethyl orthosilicate
  • PETEOS PETEOS
  • control module 401 is connected to the shower head 301 through the drive assembly 303, the control module 401 is used to send a control signal to the drive assembly 303, and the drive assembly adjusts the structure of the air outlet panel in the shower head 301 based on the control signal, To adjust the distance between the air outlet in the air outlet panel and the deposited film.
  • the driving component 303 adopts a piezoelectric ceramic driver, which has the advantages of small size, large bearing capacity, fast response speed, high displacement resolution, low electromagnetic noise, and no heat generation.
  • the deposition apparatus 300 further includes a blocking module 304 , the blocking module 304 is connected to the driving assembly 303 and the showerhead 301 , and the driving assembly 303 is configured to control whether the blocking module blocks the air outlet holes in the showerhead 301 based on the control signal .
  • this embodiment adjusts the structure of the air outlet panel according to the judgment result of the thickness of the deposited film, so as to adjust the position of the air outlet hole in the air outlet panel, thereby improving the thickness of the deposited film, thereby increasing the thickness of the deposited film. Thickness uniformity of deposited films.
  • the present disclosure determines whether there is a thickness difference in the deposited film by detecting whether there is a thickness defect in the deposited film, and correspondingly adjusts the position of the air outlet in the air outlet panel according to the position of the thickness defect, thereby improving the The thickness difference of the deposited thin film can effectively improve the thickness uniformity of the deposited thin film on the semiconductor substrate.

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Abstract

本公开公开了一种半导体沉积方法及半导体沉积系统，其中，半导体沉积方法包括：提供沉积设备，沉积设备包括用于沉积的喷淋头；检测沉积薄膜是否存在厚度缺陷，厚度缺陷包括沉积薄膜的厚度差异；获取存在厚度缺陷的位置；基于厚度缺陷的位置，调整喷淋头中出风面板的结构，以调整出风面板中出气孔与沉积薄膜间的距离。

Description

半导体沉积方法及半导体沉积系统
本公开要求在2020年08月14日提交中国专利局、申请号为202010820397.4、发明名称为“半导体沉积方法及半导体沉积系统”的中国专利申请的优先权，其全部内容通过引用结合在本公开中。
技术领域
本公开涉及但不限于半导体沉积方法及半导体沉积系统。
背景技术
在集成电路(integrated circuit，IC)的制作中，主要采用化学气相沉积(chemical vapordeposition，CVD)工艺在半导体衬底(例如晶圆)上形成薄层或薄膜。在化学气相沉积工艺中，半导体衬底被暴露至前体气体(precursor gas)，前体气体在半导体衬底的表面处进行反应并在其上沉积反应产物。
在实际沉积过程中，在表面平整的半导体衬底上沉积得到的薄膜普遍会出现均匀度较差的情况。半导体衬底上沉积的薄膜不均匀会影响后续工艺，如使得刻蚀出现不均匀情况或者半导体衬底化学研磨出现不均匀情况，最终影响半导体产品质量。
发明内容
以下是对本文详细描述的主题的概述。本概述并非是为了限制权利要求的保护范围。
本公开中提供了一种半导体沉积方法，包括：提供沉积设备，沉积设备包括用于沉积的喷淋头；检测沉积薄膜是否存在厚度缺陷，厚度缺陷包括沉积薄膜的厚度差异；获取存在厚度缺陷的位置；基于厚度缺陷的位置，调整喷淋头中出风面板的结构，以调整出风面板中出气孔与沉积薄膜间的距离。
相较于传统的沉积方法而言，本公开提供的半导体沉积方法通过检测沉积薄膜是否存在厚度缺陷，判断沉积薄膜是否存在厚度差异，根据厚度缺陷的位 置对应调整出风面板中出气孔的位置，从而改善沉积薄膜已出现的厚度差异，有效提高半导体衬底上沉积薄膜的厚度均匀性。
本公开中还提供了一种半导体沉积系统。
根据本公开实施例的半导体沉积系统，包括：沉积设备和控制系统；沉积设备包括喷淋头，以及用于装设半导体衬底的承载台；控制系统包括检测模块和控制模块；检测模块设置在沉积设备上，用于检测半导体衬底上的沉积薄膜是否存在厚度缺陷；控制模块连接喷淋头，用于调整喷淋头中出风面板的结构，以调整出风面板中出气孔与沉积薄膜间的距离。
相对于传统采用平整的出风面板而言，本实施例通过沉积薄膜厚度的判断结果，调整出风面板的结构，以调整出风面板中出气孔的位置，从而改善沉积薄膜的厚度，从而提高沉积薄膜的厚度均匀性。
在阅读并理解了附图和详细描述后，可以明白其他方面。
附图说明
并入到说明书中并且构成说明书的一部分的附图示出了本公开的实施例，并且与描述一起用于解释本公开实施例的原理。在这些附图中，类似的附图标记用于表示类似的要素。下面描述中的附图是本公开的一些实施例，而不是全部实施例。对于本领域技术人员来讲，在不付出创造性劳动的前提下，可以根据这些附图获得其他的附图。
图1为本公开第一实施例提供的半导体沉积方法的流程示意图；
图2至图5为本公开第一实施例提供的沉积设备的结构示意图；
图6为本公开第一实施例提供的获取厚度缺陷的原理示意图；
图7至图9为本公开第二实施例提供的沉积设备的结构示意图；
图10为本公开第三实施例提供的半导体沉积方法的流程示意图；
图11为本公开第四实施例提供的半导体沉积系统的结构示意图。
具体实施方式
以下结合附图和具体实施方式对本公开提出的半导体沉积方法及半导体沉 积系统进行说明。
目前，在实际沉积过程中，在表面平整的半导体衬底上沉积得到的薄膜普遍会出现均匀度较差的情况。半导体衬底上沉积的薄膜不均匀会影响后续工艺，如使得刻蚀出现不均匀情况或者半导体衬底化学研磨出现不均匀情况，最终影响半导体产品质量。
本公开第一实施例提供了一种半导体沉积方法，包括：提供沉积设备，沉积设备包括用于沉积的喷淋头；检测沉积薄膜是否存在厚度缺陷，厚度缺陷包括沉积薄膜的厚度差异；获取存在厚度缺陷的位置；基于厚度缺陷的位置，调整喷淋头中出风面板的结构，以调整出风面板中出气孔与沉积薄膜间的距离。
下面将结合附图对本公开的各实施例进行详细的阐述。然而，本领域技术人员可以理解，在本公开各实施例中，为了使读者更好地理解本公开而提出了许多技术细节。但是，即使没有这些技术细节和基于以下各实施例的种种变化和修改，也可以实现本公开所要求保护的技术方案。以下各个实施例的划分是为了描述方便，不应对本公开的具体实现方式构成任何限定，各个实施例在不矛盾的前提下可以相互结合，相互引用。
图1为本公开第一实施例提供的半导体沉积方法各步骤对应的流程示意图，下面对本实施例的半导体沉积方法进行具体说明。
参考图1，半导体沉积方法，包括以下步骤：
步骤A101，提供沉积设备，沉积设备包括用于沉积的喷淋头。
一般而言，传统的化学气相沉积设备的喷淋头的出气孔所在平面为与半导体衬底相平行设置的平面，喷淋头的出气孔所在平面正对着半导体衬底，喷淋头外排的气体在半导体衬底的表面处进行反应并在其上沉积反应产物。然而，半导体衬底的表面沉积形成的薄膜为中部薄边缘厚。
本实施例以大气压化学气相沉积(atmospheric pressure chemical vapor deposition，APCVD)设备为例，此外也可以采用等离子体增强型化学气相沉积(plasma enhanced chemical vapor deposition，PECVD)设备或金属有机化学气相沉积(metal organic chemical vapor deposition，MOCVD)设备。通过特殊形状的喷淋头以及相应的沉积方法，以提高沉积薄膜的均匀性。
参考图2，图2为本公开实施例给出的沉积设备的结构示意图，喷淋头10包括壳体11。壳体11包括相对设置的第一端与第二端，第一端与第二端分别如图2的壳体11的上侧部位与下侧部位。壳体11的第一端设有与进气管17相连的进气口111，壳体11的第二端设有出风面板113。出风面板113的板面上设有若干个出气孔114，出风面板113板面的中部部位相对于边缘部位更加远离于第一端。
上述的喷淋头10，在对半导体衬底进行化学气相沉积工作时，反应气体通过进气口111进入到壳体11的内腔，并通过出风面板113的出气孔114向外排放，并吹向半导体衬底，在半导体衬底的表面上沉积形成沉积薄膜。其中，由于出风面板113的中部部位相对于边缘部位更加远离于第一端，如此出风面板113的中部部位相对于出风面板113的边缘部位靠近于半导体衬底，在沉积的时候，能够实现中部沉积的粒子较多，从中部到边缘区域沉积的粒子逐渐减少。相对于传统采用平整的出风面板而言，能实现半导体衬底上沉积得到的薄膜的中部部位厚度相对增大，这样在半导体衬底的表面上进行沉积得到的薄膜的均匀性便得到改善。
在本实施例中，出风面板113为锥体结构或圆锥台结构。如此，在半导体衬底的表面上沉积得到的薄膜各个部位较为均匀。当喷淋头10正对半导体衬底进行化学气相沉积工作时，选取喷淋头10上平行于半导体衬底的面为参考面115，具体而言，锥体结构的出风面板113的角度可调整，出风面板113的锥型面与参考面115之间形成的夹角a可调整，当夹角a越大时，意味着出风面板113的中部部位相对于边缘部位靠近于半导体衬底的程度越大；当夹角a越小时，表示出风面板113的中部部位相对于边缘部位靠近于半导体衬底的程度越小。
需要说明的是，在其他实施例中，出风面板可以采用多个平行的平行板组成，本实施例并不对出风面板的结构进行具体限定。另外参考图5，壳体11的主体结构116可以为例如为圆柱体、半球体或者圆柱体与半球体相结合的结构体，主体结构116指的是壳体11上去除出风面板113以后的结构，壳体11在半导体衬底30上投影与半导体衬底30的表面形状相适应，如此能实现半导体衬底30的表面上的各个部位均匀地沉积得到薄膜。当然，壳体11的主体结构116也不限于是上述结构，还可以是其它不规则结构，在此不进行赘述。
继续图1，步骤A102，检测沉积薄膜是否存在厚度缺陷。厚度缺陷包括沉积薄膜的厚度差异。
需要说明的是，在本实施例中，检测沉积薄膜的厚度缺陷是在对半导体衬底进行沉积的过程中实现的，根据沉积薄膜的厚度随时改变喷淋头中出风面板的结构；在其他实施例中，也可以通过量测机台对沉积后的薄膜进行厚度缺陷的测量，根据测量结果对喷淋头中出风面板的结构进行反馈调节。
在示例性实施方式中，步骤A102包括子步骤A102-1，检测沉积薄膜中待检测区域的厚度和子步骤A102-2，基于待检测区域的厚度，判断所述沉积薄膜是否存在所述厚度缺陷。
子步骤A102-1，检测沉积薄膜中待检测区域的厚度。
待检测区域包括距离沉积薄膜中心位置第一距离的第一检测区域和距离沉积薄膜中心位置第二距离的第二检测区域，第二距离大于第一距离。在本实施例中，第一检测区域设置在沉积薄膜的中心位置，第二检测区域设置在沉积薄膜的边缘位置。
在示例性实施方式中，可以通过设置在第一检测区域和第二检测区域所对应的出风面板上设置传感器来获取第一检测区域和第二检测区域中沉积薄膜的厚度。
需要说明的是，在其他实施例中，还包括第三检测区域和第四检测区域等多个检测区域，通过设置在不同半径位置的检测区域，可以全面且准确的获取沉积薄膜各个位置的厚度，后续判断出的沉积薄膜是否存在厚度缺陷的结论更加具有说服力。
子步骤A102-2，基于待检测区域的厚度，判断所述沉积薄膜是否存在所述厚度缺陷。
基于第一检测区域和第二检测区域所检测的沉积薄膜的厚度，判断沉积薄膜是否存在厚度缺陷。
在本实施例中，第一检测区域设置在沉积薄膜的中心位置，第二检测区域设置在沉积薄膜的边缘位置，基于第一检测区域和第二检测区域所检测的沉积薄膜的厚度即基于沉积薄膜的中间厚度和边缘厚度，判断沉积薄膜是否存在厚 度缺陷。
在示例性实施方式中，根据获取的待检测区域的厚度，判断各个待检测区域的厚度差异是否超过预设阈值范围，若超过预设阈值范围，则表明沉积薄膜的较高位置与较低位置存在较大的厚度差，即沉积薄膜存在厚度缺陷。
参考图6，以圆形的沉积薄膜和圆锥形的出风面板为例进行原理介绍。以下将结合如下的计算公式进行具体说明：
x1+Rtanα＝y                           (1)
x0＝x1-x1’                            (2)
α’＝△α+α                          (3)
x0＝y-Rtanα’-x1’                    (4)
y0＝y-y’                              (5)
△＝|y0-x0|                            (6)
其中，出风面板的本体半径为R，由于出风面板的本体是不变化的，即R是一个定值；出风面板边缘位置的距离机台的距离的y，由于出风面板的边缘位置无法移动，即y是一个定值。初始状态下，出风面板的中间位置距离机台的距离为x1，由于出风面板的中间部分可以移动，即x1是一个变量，出风面板的倾斜角度为α。
初始状态下，获取出风面板边缘位置和中间位置的传感器读取的数值y和x1，并基于公式(1)计算出风面板的倾斜角度α。
在进行薄膜沉积后，若出风面板的角度并未调整，获取出风面板边缘位置和中间位置的传感器读取的数值y’和x1’，此时可根据公式(2)(5)计算出沉积薄膜边缘位置和中间位置的厚度y0和x0；在进行薄膜沉积后，若出风面板的角度发生调整，且调整的角度为△α，此时根据公式(3)计算出出风面板的实际倾斜角度α’。然后根据公式(4)(5)计算出沉积薄膜边缘位置和中间位置的厚度y0和x0。
然后根据公式(6)计算出沉积薄膜待检测位置的厚度差△。
需要说明的是，在其他实施例中，除了第一检测区域和第二检测区域外还 包括第三检测区域等，第三检测区域中的厚度检测数据x2类似于x1进行数据检测，其具体流程同上，在此不过多赘述。
步骤A103，获取存在厚度缺陷的位置。
基于沉积薄膜的厚度差异判断沉积薄膜存在厚度缺陷的检测区域，获取与该检测区域对应的传感器的位置，即获取到厚度缺陷的位置。
步骤A104，基于厚度缺陷的位置，调整出气孔与沉积薄膜间的距离。
基于厚度缺陷的位置，调整喷淋头中出风面板113的结构，以调整出风面板113中出气孔114与沉积薄膜间的距离。在本实施例中，通过调整出风面板113的中部部位朝向靠近或者远离沉积薄膜的方向移动来调整出风面板113中出气孔114与沉积薄膜间的距离。
参考图3和图4，出风面板113可调整地设置于壳体11的第二端。当出风面板113可调整地装设于壳体11的第二端时，可以根据实际情况调整不同倾斜角度的出风面板113，出气孔114与沉积薄膜之间的距离。
不同倾斜角度的出风面板113的中部部位相对于边缘部位远离于第一端的程度不同，也就是在化学气相沉积时靠近于半导体衬底表面的程度不同。当需要增加半导体衬底表面上沉积得到的薄膜的中部部位厚度时，可以调整中部部位相对于边缘部位更加远离于第一端的出风面板113，也即是调整出风面板113的中部部位更加向外凸，这样出风面板113的中部部位更加靠近于半导体衬底30表面，使得半导体衬底的表面上沉积得到的薄膜的中部部位厚度将相对增大。反之，当需要减小半导体衬底表面上沉积得到的薄膜的中部部位厚度时，可以调整中部部位相对于边缘部位远离第一端的程度更小的出风面板113，也即是调整出风面板113的中部部位向外凸的程度减小，这样出风面板113的中部部位靠近于半导体衬底表面的程度减小，使得半导体衬底的表面上沉积得到的薄膜的中部部位厚度将相对减小。
需要说明的是，在本实施例中，步骤A102中检测沉积薄膜是否存在厚度缺陷包括实时检测和定时检测，相应的，步骤A104中调整出气孔与沉积薄膜间的距离也包括实时调节和定时调节。实时调节即在薄膜沉积的过程中，出风面板113的倾斜角度α会实时根据检测出来的厚度差△来进行调节。定时检测则用 于分段沉积的方式，即将薄膜沉积的过程划分为多个阶段，每一阶段沉积部分薄膜，通过收集沉积数据得到出风面板的倾斜角度α与沉积薄膜的厚度变化关系，假设h＝K*α+ψ，h为调节角度α后对应厚度的变化值，在每一阶段沉积执行完后，通过检测沉积薄膜的厚度差来改善下一阶段沉积过程中出风面板113的倾斜角度α，从而提高沉积薄膜厚度的均匀性。在其他实施例中，还可以通过量测机台对沉积完成后的沉积薄膜进行厚度检测，通过量测机台来测量沉积薄膜的厚度差h，然后根据厚度差h与角度α的关系来调节喷淋头中出风面板的倾斜角度α，从而实现后续形成的沉积薄膜的均匀性。
需要说明的是，本实施例通过调整出风面板113中部位置相对与边缘部分的距离来改善沉积薄膜的形貌，避免沉积薄膜出现边缘高中间低的厚度缺陷。即通过调整与厚度缺陷位置相对应的出气孔靠近或者远离沉积薄膜。在其他实施例中，还可以固定出风面板的中部位置，通过调整出风面板边缘部分相对于中部位置的距离来改善沉积薄膜的形貌，即通过调整与厚度缺陷位置相应的出气孔外其他出气孔靠近或者远离沉积薄膜。
相较于传统的沉积方法而言，本实施例通过检测沉积薄膜是否存在厚度缺陷，判断沉积薄膜是否存在厚度差异，根据厚度缺陷的位置对应调整出风面板中出气孔的位置，从而改善沉积薄膜已出现的厚度差异，有效提高半导体衬底上沉积薄膜的厚度均匀性。
上面各种步骤划分，只是为了描述清楚，实现时可以合并为一个步骤或者对某些步骤进行拆分，分解为多个步骤，只要包括相同的逻辑关系，都在本专利的保护范围内；对流程中添加无关紧要的修改或者引入无关紧要的设计，但不改变其流程的核心设计都在该专利的保护范围内。
本公开第二实施例涉及一种半导体沉积方法。与第一实施例不同的是，本实施例与第一实施例所应用的沉积设备中喷淋头的结构以及调整喷淋头结构的方式不同。
参考图7～图9，以下将结合附图对本实施例提供的半导体沉积方法进行详细说明，与第一实施例相同或相应的部分，以下将不做赘述。
本实施例给出了两种调整出风面板的方法，具体如下：
方法一：出风面板中部设置有推动组件，通过调整推动组件的长度，以使出风面板中部部位朝向靠近或远离沉积薄膜的方向移动。
在示例性实施方式中，参考图7，沉积设备还包括驱动组件12，出风面板113为可变形板，驱动组件12装设于壳体11上，驱动组件12用于驱动可变形板的中部部位朝向远离或靠近于第一端的方向伸缩移动。具体而言，可变形板例如为弹性面板或柔性材质板，只要能在驱动组件12的推动下相应发生变形即可，在此不进行限定。以可变形板为弹性面板为例进行说明，通过驱动组件12驱动可变形板的中部部位朝向远离于第一端的方向移动，使可变形板发生形变，出风面板113板面与参考面115之间形成的夹角a变大，能实现增大出风面板113板面的中部部位相对于边缘部位远离于第一端的程度；反之，驱动组件12缩回时，可变形板在弹性力作用下恢复，出风面板113板面与参考面115之间形成的夹角a变小。
在示例性实施方式中，驱动组件12包括设置于第一端的螺母121，及与螺母121配合的螺杆122。螺杆122的一端位于壳体11外，螺杆122的另一端伸入到壳体11内并与出风面板113的中部部位相连。在一个例子中，不同于上述螺母121及螺杆122配合的组合结构，驱动组件12包括推拉杆，推拉杆贯穿壳体11伸入到壳体11内，推拉杆的端部与出风面板113的中部部位相连。作为另一个示例，不同于上述螺母121及螺杆122配合的组合结构，驱动组件12包括设置于壳体11内的伸缩调节杆，伸缩调节杆的端部与出风面板113的中部部位相连。
在示例性实施方式中，参考图8，驱动组件包括第一推动组件13和第二推动组件14以及第三推动组件15。第一推动组件13和第二推动组件14以及第三推动组件15设置在壳体11上，出风面板113包括外围面板1131及位于外围面板1131的中部区域的第一中部面板1132。外围面板1131固定设于壳体11的第二端，外围面板1131的中部部位设有第一活动口1133。第一中部面板1132的板缘绕设有第一挡风套1134。第一挡风套1134可活动地设置于第一活动口1133中。第一推动组件13与第一中部面板1132相连，用于推动第一中部面板1132远离或者靠近第一端。出风面板113还包括第二中部面板1135。第一中部面板1132的中部部位设有第二活动口1136。第二中部面板1135的板缘绕设有第二挡 风套1137，第二挡风套1137可活动地设置于第二活动口1136中，第二推动组件14与第二中部面板1135相连，用于推动第二中部面板1135远离或者靠近第一端。如此，能提高半导体衬底30的表面上进行沉积得到的薄膜的均匀性。出风面板113还包括第三中部面板1138。第二中部面板1135的中部部位设有第三活动口1139。第三中部面板1138的板缘绕设有第三挡风套11391。第三挡风套11391可活动地设置于第三活动口1139中。第三推动组件15与第三中部面板1138相连，用于推动第三中部面板1138远离或者靠近第一端。
在本实施例中，为了保证第一导风套在第一活动口1133处较好的移动效果，第一导风套的外壁上例如设置有导向筋条(图中未示意出来)，第一活动口1133口壁上例如设有与导向筋条滑动配合的凹部(图中未示意出来)。此外，在另一个实施例中，第一导风套做成伸缩式的套体，套体的一端与第一活动口1133口壁相连，套体的另一端则绕第一中部面板1132的板缘周向设置。当第一推动组件13推动第一中部面板1132时，套体相应伸长或缩短。需要说明的是，第二推动组件14与第三推动组件15类似于第一推动组件13设置，在此不进行赘述。第二挡风套1137与第三挡风套11391同样类似于第一挡风套1134的设置方式，在此不再赘述。
本例以平行板的方式为例进行具体介绍，介绍了三个平行板通过三个推动组件以使出风面板中部部位朝向靠近或远离沉积薄膜的方向移动的结构，在其他例子中，平行板的数量可以不局限于三个，可以为两个或三个以上的平行板。需要说明的是，当出风面板113的中部面板数量越多，且为由外围至中间依次套设设置时，能有利于提高半导体衬底30的表面上进行沉积得到的薄膜的均匀性。出风面板113的中部面板的数量在此不进行限制为第一中部面板1132、第二中部面板1135及第三中部面板1138，还可以有第四中部面板与第五中部面板等等，具体可以实际需求进行设置。此外，各个面板的形状不局限为矩形，且适用于锥形体或半球体等其他形状。
方法二：出风面板中部设置有连接部，出风面板边缘设置有滑动部件，通过调整出风面板基于所述滑动部件滑动，以使出风面板的中部部位朝向靠近或者远离沉积薄膜的方向移动。
在示例性实施方式中，参考图9，图9中两个虚线示意的为出风面板113可 以调整到的两个具体位置。在本实施例中，出风面板113包括两个转动面板11392及两个挡风柔性板11393。壳体11的第二端设有出气口112。两个转动面板11392的一端通过连接部可转动相连，转动面板11392的另一端与壳体11的第二端通过滑动部件滑动配合。其中一个挡风柔性板11393分别与两个转动面板11392的其中一侧以及第二端相连，另一个挡风柔性板11393分别与两个转动面板11392的另一侧以及第二端相连。两个挡风柔性板11393与两个转动面板11392围住出气口112。其中，转动面板11392上设有出气孔114。柔性板11393上可以设置出气孔114，也可以不进行设置，在此不进行限定。如此，通过调整两个转动面板11392之间的角度，能实现调节两个转动面板11392的连接部位(对应于出风面板113的中部部位)相对于边缘部位远离第一端的程度。
相较于传统的沉积方法而言，本实施例通过检测沉积薄膜是否存在厚度缺陷，判断沉积薄膜是否存在厚度差异，根据厚度缺陷的位置对应调整出风面板中出气孔的位置，从而改善沉积薄膜已出现的厚度差异，有效提高半导体衬底上沉积薄膜的厚度均匀性。
上面各种步骤划分，只是为了描述清楚，实现时可以合并为一个步骤或者对某些步骤进行拆分，分解为多个步骤，只要包括相同的逻辑关系，都在本专利的保护范围内；对流程中添加无关紧要的修改或者引入无关紧要的设计，但不改变其流程的核心设计都在该专利的保护范围内。
本公开第三实施例涉及一种半导体沉积方法。与第一实施例不同的是，本实施例对沉积薄膜的厚度检测后，还用于获取厚度分布图，根据厚度分布图判断沉积薄膜是否存在厚度缺陷，检测的准确度更高。
参考图10，以下将结合附图对本实施例提供的半导体沉积系统进行详细说明，与第一实施例相同或相应的部分，以下将不做赘述。
半导体沉积方法，包括以下步骤：
步骤B101，提供沉积设备。
步骤B102，检测沉积薄膜中各个位置的厚度获取沉积薄膜的厚度分布图。具体地，检测沉积薄膜中与出气孔对应位置的厚度，基于沉积薄膜中出气孔对应位置的厚度以及出气孔的排布，获取厚度分布图。
在本实施例中，检测距离用的传感器设置在每个出气孔的附近，用于测量每个出气孔对应位置的沉积薄膜厚度，通过多个传感器设置，可以准确的获取沉积薄膜各个位置的厚度。
步骤B103，基于厚度分布图,获取存在厚度缺陷的位置。通过厚度分布图获取额的厚度缺陷位置更加具有准确性。
步骤B104，基于厚度缺陷的位置，调整出气孔与沉积薄膜间的距离。
需要说明的是，在本实施例中，还包括调整喷淋头中出风面板的结构，以调整出风面板中出气孔是否出气。若沉积薄膜局部出现缺陷，即局部的厚度与其他部位的厚度的差异过大，即使调整了出气孔与沉积薄膜的距离，依然难以补偿局部区域的厚度差，此时通过关闭相应位置的出气孔，更加便于改善局部位置的厚度缺陷。
相较于传统的沉积方法而言，本实施例通过检测沉积薄膜是否存在厚度缺陷，判断沉积薄膜是否存在厚度差异，根据厚度缺陷的位置对应调整出风面板中出气孔的位置，从而改善沉积薄膜已出现的厚度差异，有效提高半导体衬底上沉积薄膜的厚度均匀性。
上面各种步骤划分，只是为了描述清楚，实现时可以合并为一个步骤或者对某些步骤进行拆分，分解为多个步骤，只要包括相同的逻辑关系，都在本专利的保护范围内；对流程中添加无关紧要的修改或者引入无关紧要的设计，但不改变其流程的核心设计都在该专利的保护范围内。
由于第一实施例与本实施例相互对应，因此本实施例可与第一实施例互相配合实施。第一实施例中提到的相关技术细节在本实施例中依然有效，在第一实施例中所能达到的技术效果在本实施例中也同样可以实现，为了减少重复，这里不再赘述。相应地，本实施例中提到的相关技术细节也可应用在第一实施例中。
本公开第四实施例涉及一种半导体沉积系统。
参考图11，以下将结合附图对本实施例提供的半导体沉积系统进行详细说明，与第一实施例相同或相应的部分，以下将不做赘述。
半导体沉积系统，包括：沉积设备300和控制系统400。
沉积设备300包括喷淋头301，以及用于装设半导体衬底的承载台302；控制系统400包括检测模块402和控制模块401；检测模块402设置在沉积设备300上，用于检测半导体衬底上的沉积薄膜是否存在厚度缺陷；控制模块401连接喷淋头301，用于调整用于沉积的喷淋头301中出风面板的结构，以调整出风面板中出气孔与沉积薄膜见的距离。
上述的沉积设备300，在对半导体衬底进行化学气相沉积工作时，反应气体通过进气口进入到壳体的内腔，并通过出风面板的出气孔向外排放，并吹向半导体衬底在半导体衬底的表面上沉积形成薄膜。其中，由于出风面板的中部部位相对于边缘部位更加远离于第一端，如此出风面板的中部部位相对于出风面板的边缘部位靠近于半导体衬底，相对于传统采用平整的出风面板而言，能实现半导体衬底上沉积得到的薄膜的中部部位厚度相对增大，这样在半导体衬底的表面上进行沉积得到的薄膜的均匀性便得到改善。
沉积设备300可为等离子体增强型化学气相沉积(plasma-enhanced chemical vapor deposition，PECVD)设备、大气压化学气相沉积(atmospheric pressure chemical vapor deposition，APCVD)设备或金属有机化学气相沉积(metal organic chemical vapor deposition，MOCVD)设备。
在示例性实施方式中，承载台302具体为吸盘，吸盘的直径与喷淋头301的直径实质上相同或相近且可沿轴线垂直地移动。可移动的承载台302用于调整其在真空室中的位置。加热系统或冷却系统可设置在承载台302中，以加热或冷却半导体衬底和/或被配置成加热或冷却真空室的壁。等离子体增强型化学气相沉积是一种工艺，其可在比标准化学气相沉积(CVD)的温度低的温度下在半导体衬底上沉积各种材料的薄膜。可将直流(direct current，DC)电源或射频(radio frequency，RF)电源附接到真空室，以在等离子体增强型化学气相沉积工艺中生成等离子体。在等离子体增强型化学气相沉积工艺中，沉积是通过在平行的电极(射频激励电极(RF energized electrode)或直流电极与接地电极(grounded electrode))之间引入反应气体来实现。或者，腔室可具有线圈以生成较高密度的经电感耦合等离子体。在任一种情形中，上述实施例的喷淋头301在所得膜均匀性方面起着重要作用。电极与电极之间的电容耦合将反应气体激发成等离子体，此会引发化学反应且使得反应产物沉积在半导体衬底上。根据特定膜要求， 放置在接地电极上的半导体衬底可被加热到250℃到350℃。
相比之下，不进行等离子体激发(plasma excitation)的标准化学气相沉积可能需要更高的温度，例如加热到在600℃与800℃之间的范围。由于化学气相沉积的温度可能损坏被制作的装置，因此，在许多应用中较低的沉积温度是至关重要的。通常使用等离子体增强型化学气相沉积来沉积的膜是氮化硅(SiN)、氧化硅(SiO)、氮氧化硅(SiON)、碳化硅(SiC)及非晶硅(α-Si)。硅烷(SiH)与氧来源气体进行组合以形成二氧化硅，或者是硅烷与氮来源气体进行组合从而形成氮化硅。在一些实施例中，使用正硅酸乙酯(tetra ethyl ortho silicate，TEOS)材料并通过等离子体增强型化学气相沉积工艺来形成氧化物层(即等离子体增强型正硅酸乙酯(plasma enhanced TEOS，PETEOS)工艺)。通过等离子体激发，会从正硅酸乙酯/氧获得高的沉积速率。
在本实施例中，控制模块401通过驱动组件303连接喷淋头301，控制模块401用于向驱动组件303发出控制信号，驱动组件基于控制信号，调整喷淋头301中出风面板的结构，以调整出风面板中出气孔与沉积薄膜间的距离。在一个例子中，驱动组件303采用压电陶瓷驱动器，其具有体积小、承载力大、响应速度快、位移分辨率高、电磁噪声低、不发热等优点。
在示例性实施方式中，沉积设备300还包括阻挡模块304，阻挡模块304连接驱动组件303和喷淋头301，驱动组件303用于基于控制信号控制阻挡模块是否阻挡喷淋头301中的出气孔。
相对于传统采用平整的出风面板而言，本实施例通过沉积薄膜厚度的判断结果，调整出风面板的结构，以调整出风面板中出气孔的位置，从而改善沉积薄膜的厚度，从而提高沉积薄膜的厚度均匀性。
本领域技术人员在考虑说明书及实践的公开后，将容易想到本公开的其它实施方案。本公开旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由下面的权利要求指出。
应当理解的是，本公开并不局限于上面已经描述并在附图中示出的精确结构，并且可以在不脱离其范围进行各种修改和改变。本公开的范围仅由所附的 权利要求来限制。
工业实用性
本公开所提供的半导体沉积方法及半导体沉积系统，本公开通过检测沉积薄膜是否存在厚度缺陷，判断沉积薄膜是否存在厚度差异，根据厚度缺陷的位置对应调整出风面板中出气孔的位置，从而改善沉积薄膜已出现的厚度差异，有效提高半导体衬底上沉积薄膜的厚度均匀性。

Claims (13)

  1. 一种半导体沉积方法，其中，所述半导体沉积方法包括：
    提供沉积设备，所述沉积设备包括用于沉积的喷淋头；
    检测沉积薄膜是否存在厚度缺陷，所述厚度缺陷包括所述沉积薄膜的厚度差异；
    获取存在所述厚度缺陷的位置；
    基于所述厚度缺陷的位置，调整所述喷淋头中出风面板的结构，以调整所述出风面板中出气孔与所述沉积薄膜间的距离。
  2. 根据权利要求1所述的半导体沉积方法，其中，所述检测沉积薄膜是否存在厚度缺陷，包括：
    检测所述沉积薄膜中待检测区域的厚度；
    基于所述待检测区域的厚度，判断所述沉积薄膜是否存在所述厚度缺陷。
  3. 根据权利要求2所述的半导体沉积方法，其中，所述基于所述待检测区域的厚度，判断所述沉积薄膜是否存在所述厚度缺陷，包括：
    所述待检测区域包括距离所述沉积薄膜中心位置第一距离的第一检测区域和距离所述沉积薄膜中心位置第二距离的第二检测区域，其中，所述第二距离大于所述第一距离；
    基于所述第一检测区域和所述第二检测区域所检测的所述沉积薄膜的厚度，判断所述沉积薄膜是否存在厚度缺陷。
  4. 根据权利要求3所述的半导体沉积方法，其中，所述第一检测区域设置在所述沉积薄膜的中心位置，所述第二检测区域设置在所述沉积薄膜的边缘位置。
  5. 根据权利要求1所述的半导体沉积方法，其中，所述调整所述喷淋头中出风面板的结构，以调整所述出风面板中出气孔与所述沉积薄膜间的距离，包括：调整所述出风面板的中部部位朝向靠近或者远离于所述沉积薄膜的方向移动。
  6. 根据权利要求1所述的半导体沉积方法，其中，所述检测沉积薄膜是否存 在厚度缺陷，包括：
    检测所述沉积薄膜中各个位置的厚度获取沉积薄膜的厚度分布图；
    基于所述厚度分布图，判断所述沉积薄膜是否存在所述厚度缺陷。
  7. 根据权利要求6所述的半导体沉积方法，其中，所述检测所述沉积薄膜中各个位置的厚度获取沉积薄膜的厚度分布图，包括：
    检测所述沉积薄膜中与所述出气孔对应位置的厚度；
    基于所述沉积薄膜中与所述出气孔对应位置的厚度以及所述出气孔的排布，获取所述厚度分布图。
  8. 根据权利要求7所述的半导体沉积方法，其中，还包括：调整所述喷淋头中出风面板的结构，以调整所述出风面板中出气孔中是否出气。
  9. 根据权利要求1所述的半导体沉积方法，其中，所述调整所述喷淋头中出风面板的结构，包括：调整与所述厚度缺陷的位置相对应的出气孔靠近或者远离所述沉积薄膜。
  10. 一种半导体沉积系统，其中，所述半导体沉积系统包括：沉积设备和控制系统；
    所述沉积设备包括喷淋头，以及用于装设半导体衬底的承载台；
    所述控制系统包括检测模块和控制模块；
    所述检测模块设置在所述沉积设备上，用于检测所述半导体衬底上的沉积薄膜是否存在厚度缺陷；
    所述控制模块连接所述喷淋头，用于调整所述喷淋头中出风面板的结构，以调整所述出风面板中出气孔与所述沉积薄膜间的距离。
  11. 根据权利要求10所述的半导体沉积系统，其中，所述沉积设备还包括驱动组件；
    所述控制模块通过所述驱动组件连接所述喷淋头；
    所述控制模块用于向所述驱动组件发出控制信号，所述驱动组件基于所述控制信号，调整所述喷淋头中出风面板的结构，以调整所述出风面板中出气孔 与所述沉积薄膜间的距离。
  12. 根据权利要求11所述的半导体沉积系统，其中，所述驱动组件通过压电陶瓷驱动器实现。
  13. 根据权利要求11所述的半导体沉积系统，其中，所述沉积设备还包括阻挡模块，连接所述驱动组件，所述驱动组件用于基于所述控制信号控制所述阻挡模块是否阻挡所述喷淋头中的出气孔。
PCT/CN2021/101334 2020-08-14 2021-06-21 半导体沉积方法及半导体沉积系统 Ceased WO2022033178A1 (zh)

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CN117660930A (zh) * 2022-08-31 2024-03-08 长鑫存储技术有限公司 喷淋头、沉积设备及其工作方法
CN115838964A (zh) * 2022-10-19 2023-03-24 江苏第三代半导体研究院有限公司 一种mocvd长晶设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410442A1 (en) * 1989-07-28 1991-01-30 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
JP2001140078A (ja) * 1999-11-12 2001-05-22 Anelva Corp 化学蒸着装置
KR20070080502A (ko) * 2006-02-07 2007-08-10 삼성전자주식회사 기판 처리 장치 및 방법
CN202954088U (zh) * 2012-11-15 2013-05-29 中芯国际集成电路制造(北京)有限公司 便于调节间距的半导体沉积结构
US20130334344A1 (en) * 2012-06-15 2013-12-19 Karl F. Leeser Contoured showerhead for improved plasma shaping and control
JP2014129568A (ja) * 2012-12-28 2014-07-10 Canon Tokki Corp 蒸発源装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033921A (en) * 1998-04-06 2000-03-07 Advanced Micro Devices, Inc. Method for depositing a material of controlled, variable thickness across a surface for planarization of that surface
JP3829281B2 (ja) * 2002-04-11 2006-10-04 株式会社日立製作所 膜厚分布解析方法、電子回路基板及び製造プロセスの設計装置
KR100866451B1 (ko) * 2002-06-12 2008-10-31 동부일렉트로닉스 주식회사 반도체 디펙트 검사 장비의 교정용 인증체 및 그 제조 방법
US8074599B2 (en) * 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US20060228490A1 (en) * 2005-04-07 2006-10-12 Applied Materials, Inc. Gas distribution uniformity improvement by baffle plate with multi-size holes for large size PECVD systems
WO2007034541A1 (ja) * 2005-09-21 2007-03-29 Tadahiro Ohmi 減圧蒸着装置及び減圧蒸着方法
US7829815B2 (en) * 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
KR100870930B1 (ko) * 2007-05-08 2008-11-28 주식회사 고영테크놀러지 다방향 영사식 모아레 간섭계 및 이를 이용한 검사방법
US8382941B2 (en) * 2008-09-15 2013-02-26 Micron Technology, Inc. Plasma reactor with adjustable plasma electrodes and associated methods
WO2010065473A2 (en) * 2008-12-01 2010-06-10 Applied Materials, Inc. Gas distribution blocker apparatus
CN104269370B (zh) * 2014-09-01 2017-05-17 上海华力微电子有限公司 改善晶圆边缘缺陷的装置
CN109285887B (zh) * 2017-07-20 2021-07-30 长鑫存储技术有限公司 喷嘴组件、改善材料层厚度均匀性的沉积装置及方法
CN110071038A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种半导体薄膜平坦度改善的方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0410442A1 (en) * 1989-07-28 1991-01-30 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
JP2001140078A (ja) * 1999-11-12 2001-05-22 Anelva Corp 化学蒸着装置
KR20070080502A (ko) * 2006-02-07 2007-08-10 삼성전자주식회사 기판 처리 장치 및 방법
US20130334344A1 (en) * 2012-06-15 2013-12-19 Karl F. Leeser Contoured showerhead for improved plasma shaping and control
CN202954088U (zh) * 2012-11-15 2013-05-29 中芯国际集成电路制造(北京)有限公司 便于调节间距的半导体沉积结构
JP2014129568A (ja) * 2012-12-28 2014-07-10 Canon Tokki Corp 蒸発源装置

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