Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
  • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
  • C08L61/18—Condensation polymers of aldehydes or ketones with aromatic hydrocarbons or their halogen derivatives only
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D1/00—Processes for applying liquids or other fluent materials
  • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
  • B05D1/005—Spin coating
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
  • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
  • C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
  • C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
  • C08G61/125—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one oxygen atom in the ring
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/01—Manufacture or treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
  • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
  • H10W74/134—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being in grooves in the semiconductor body
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
  • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
  • H10W74/137—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations being directly on the semiconductor body
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
  • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L2203/00—Applications
  • C08L2203/16—Applications used for films
  • C08L2203/162—Applications used for films sealable films
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L2203/00—Applications
  • C08L2203/20—Applications use in electrical or conductive gadgets
  • C08L2203/206—Applications use in electrical or conductive gadgets use in coating or encapsulating of electronic parts
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/16—Coating processes; Apparatus therefor

Definitions

• the present disclosure relates to a stimulus responsive polymer (SRP) that includes a homopolymer.
• SRP stimulus responsive polymer
• AMCs airborne molecular contaminants
• Solutions include storing partially fabricated semiconductor substrates in nitrogen (N2)-filled storage cassettes or rooms and using integrated tools that support multiple processes without breaking the vacuum on the substrates. These solutions are difficult and expensive to implement and pose safety and reliability concerns.
• the present disclosure relates to a stimulus responsive polymer (SRP) that includes or is a homopolymer.
• SRP stimulus responsive polymer
• the chemical characteristics of the SRP can be designed and tuned, e.g., to provide optimized deposition within particular feature sizes, residue-free removal, and/or less aggressive depolymerization.
• the SRP has a characteristic molecular weight (MW) that allows for filling of gaps, trenches, or features having minimized sizes that are difficult to address with traditional semiconductor processes.
• MW characteristic molecular weight
• the SRP allows for residue-free removal under mild conditions that do not damage sensitive substrates and surfaces.
• the present disclosure features a method including: depositing an SRP on a substrate.
• the SRP includes a homopolymer.
• the homopolymer includes a MW (e.g., a weight- average MW) of from about 250 g/mol to about 1500 kg/mol and/or a ceiling temperature less than about 300°C.
• said depositing thereby forms a film or a layer on a surface of the substrate.
• the film or layer can be provided on a top surface and/or a bottom surface of the substrate, as well as portions thereof.
• the film or layer is provided within or in proximity to a feature (e.g., a trench, a gap, a structure, etc.) of the substrate.
• said depositing includes depositing a formulation including the SRP.
• the formulation includes one or more additives.
• one or more additives are each present in an amount of from about 0.001 wt.% to about 25 wt.%.
• a combination of a plurality of additives is present in an amount of from about 0.001 wt.% to about 25 wt.%.
• Non-limiting additives include one or more of a solvent, a plasticizer, an organic acid having a pKa more than or equal to 1, a photoacid generator, a thermal acid generator, and/or a dye.
• the method further includes (e.g., after said depositing): storing the film in an ambient condition, wherein the film provides protection for the surface of the substrate during storage.
• the method further includes (e.g., after said storing): removing the film from the surface of the substrate.
• Non-limiting operations for removing can include exposing the film to one or more stimuli, such as exposure to heat (e.g., continuous heat), a temperature ramp (e.g., ramping of from about l°C/min to about 200°C/sec, in which such ramping can include decreasing or increasing the temperature), ultraviolet light (e.g., with or without vacuum; optionally at a temperature of from about 30°C to about 700°C; and/or optionally at a dosage of from about 0.1 mW/cm 2 to about 15 W/cm 2 ), metastable neutrals (e.g., atoms from a noble gas plasma), acidic or basic vapors (e.g., at a temperature of from about 20°C to about 200°C), and/or plasma.
• heat e.g., continuous heat
• a temperature ramp e.g., ramping of from about l°C
• the substrate includes a trench, a gap, or another feature.
• said depositing includes filling the trench or the gap with the SRP.
• the substrate includes a plurality of high aspect ratio structures with a first solvent.
• said depositing further includes displacing the first solvent with a solution including the SRP.
• the homopolymer includes a structure of one of formulas (I)- (XIII): or a salt thereof, wherein: each Ri is, independently, H, optionally substituted alkyl, optionally substituted alkoxy, optionally substituted alkenyl, optionally substituted aryl, or halo; each of R2, R2 , R2 , and R3 is, independently, H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl; each of R4, R4, and R4 is, independently, H, optionally substituted alkyl, optionally substituted aminoalkyl, optionally substituted heteroalkyl, or R4, and R4 , taken together with the nitrogen atom to which each are attached, form a heterocyclyl group, as defined herein; Ar is optionally substituted aryl, optionally substituted alkyl, or optionally substituted aralkyl; each of Li and L2 is, independently, a covalent bond,
• rl is an integer from 1 to 4; and n is from about 1 to about 100,000 (e.g., 2 to 100,000, 3 to 100,000, or 4 to 100,000); and wherein the homopolymer includes a linear polymer or a cyclic polymer.
• the homopolymer includes a structure of formula (la): or a salt thereof, wherein Ri, R2, R2 , rl, and n can be any described herein (e.g., such as for formula (I)).
• the homopolymer includes a linear polymer or a cyclic polymer.
• the homopolymer includes a structure of formula (lb): or a salt thereof, wherein: each of Ri, R5, and R6 is, independently, H, optionally substituted alkyl, optionally substituted alkoxy, optionally substituted alkenyl, optionally substituted aryl, or halo; each of R2, R2 , R3, R3 , R4, and Rr is, independently, H, optionally substituted alkyl, or optionally substituted aryl; each of Zi, Z2, Z3, Z4, Z5, and Zb is, independently, -0-, -S-, -CR2R3O-, -OCR2R3O-, -OCR2R3-, -CR2R3S-, -SCR2R3S-, or -SCR2R3-, in which each of R2 and R3 is, independently, H, optionally substituted alkyl, or optionally substituted aryl; each of rl, r5,
• the homopolymer includes a structure of formula (Ic): or a salt thereof, wherein Ri, R2, R2 , R3, R3 , R4, R4 , R5, R6, rl, r5, r6, and n can be any described herein (e.g., such as for formula (lb)).
• the film includes a protective film on a top surface or a bottom surface of the substrate.
• the protective film can be provided on a top surface, thereby protecting a sensitive surface of the substrate or any feature disposed on the substrate (e.g., from reactive species, such as airborne species, or other contaminants).
• the protective film can be provided on a bottom surface, thereby acting as a backside coating to protect the substrate backside (e.g., from particles or mechanical scratching).
• the method further includes (e.g., after said depositing): storing the protective film and the substrate in an ambient condition.
• the method further includes (e.g., after said storing): removing the protective film from the surface of the substrate.
• the substrate includes a gap.
• said depositing includes: depositing the SRP to fill a gap on the surface of a substrate, thereby forming a gapfill within the gap.
• the method further includes (e.g., after said depositing): removing the gapfill from the surface of the substrate.
• the substrate includes a plurality of high aspect ratio (HAR) structures disposed on a substrate.
• a solvent can be provided in a gap present between the plurality of HAR structures.
• said depositing includes: depositing the SRP to displace a first solvent from the plurality of HAR structures disposed on the substrate.
• the method further includes (e.g., after said depositing): drying the substrate to form a film including the SRP.
• the method includes (e.g., after said drying): removing the film from the substrate.
• the present disclosure encompasses a method (e.g., of making an SRP) including: reacting a monomer in the presence of a reagent; and terminating polymerization of the monomer to provide the SRP (e.g., any described herein).
• the monomer includes a structure of one of formulas (I)-(XV), (la), (lb), (Ic), or a salt thereof (e.g., in which n is 1).
• the method further includes (e.g., after said terminating): depositing the SRP on a substrate or a feature (e.g., any described herein).
• the present disclosure features a structure including: a semiconductor substrate having a top surface and a bottom surface; and a layer of SRP that is disposed on the top surface and/or the bottom surface of the semiconductor substrate.
• the layer is further disposed on a feature provided by the substrate.
• Non-limiting features include a trench, a gap, a pillar, a device, a high aspect ratio (HAR) structure, or others.
• the layer is configured to reduce permeation (e.g., sorption and/or diffusion) of one or more contaminants or reactive airborne molecules to a surface of the substrate and/or to block one or more reactive sites disposed on a surface of the substrate.
• Non-limiting contaminants include oxygen, water, and halogens (e.g., fluorine).
• the structure further includes: a plurality of HAR structures disposed on the top surface of the substrate.
• a gap is present between at least two of the HAR structures, and the layer substantially fills the gap.
• the gap has an aspect ratio of from about 0.5:1 to about 300:1.
• the present disclosure features a formulation including: about 0.1 wt.% to about 50 wt.% of an SRP (e.g., any herein); and a solvent.
• the formulation further includes: about 0.001 wt.% to about 25 wt.% of an additive selected from a plasticizer, an organic acid having a pKa more than or equal to 1, a photoacid generator, a thermal acid generator, and/or a dye.
• the SRP has a MW (e.g., a weight-average MW) of from about 250 g/mol to about 1500 kg/mol (e.g., from about 250 g/mol to 500 g/mol, 250 g/mol to 1000 g/mol, 250 g/mol to 2 kg/mol, 250 g/mol to 10 kg/mol, 250 g/mol to 50 kg/mol, 250 g/mol to 100 kg/mol, 250 g/mol to 250 kg/mol, 250 g/mol to 500 kg/mol, 250 g/mol to 750 kg/mol, 250 g/mol to 1000 kg/mol, 500 g/mol to 1000 g/mol, 500 g/mol to 2 kg/mol, 500 g/mol to 10 kg/mol, 500 g/mol to 50 kg/mol, 500 g/mol to 100 kg/mol, 500 g/mol to 250 kg/mol, 500 g/mol to 500 kg/mol, 500 g/mol to 750 kg/mol, 250 g/mol to 1000
• the SRP has a ceiling temperature less than about 300°C.
• the ceiling temperature is less than about 300°C, 250°C, 200°C, 150°C, 100°C, 90°C, 80°C, 75°C, 60°C, 50°C, 40°C, 30°C, 25°C, 20°C, 15°C, 10°C, 5°C, 0°C, -10°C, -20°C, -30°C, -40°C, -50°C, or less.
• the SRP has a ceiling temperature of from about -50°C to about 300°C.
• the ceiling temperature is from about -50°C to 250°C, -50°C to 200°C, -50°C to 150°C, -50°C to 100°C, -50°C to 50°C, -50°C to 30°C, -50°C to 10°C, -50°C to 0°C, -50°C to -10°C, -50°C to -20°C, -50°C to -30°C, -50°C to -40°C, -40°C to 250°C, -40°C to 200°C, -40°C to 150°C, -40°C to 100°C, -40°C to 50°C, -40°C to 30°C, -40°C to 10°C, -40°C to 0°C, -40°C to -10°C, -40°C to -20°C, -40°C to -30
• the SRP is a homopolymer that includes a structure of one of formulas (I)-(XIII), (la), (lb), (Ic), or a salt thereof.
• the SRP is a copolymer that includes a structure of one of formulas (I)-(XV), (la), (lb), (Ic), or a salt thereof.
• the SRP, SRP layer, or SRP film can be removed by exposure to one or more stimuli.
• Non-limiting stimulus can include exposure to heat, a temperature ramp (e.g., ramping of from about l°C/min to about 200°C/sec, in which such ramping can include decreasing or increasing the temperature), ultraviolet (UV) light (e.g., with or without vacuum; optionally at a temperature of from about 30°C to about 700°C; and/or optionally at a dosage of from about 0.1 mW/cm 2 to about 15 W/cm 2 ), one or more metastable neutrals (e.g., atoms from a noble gas plasma), acidic or basic chemistries (e.g., as vapors and optionally at a temperature of from about 20°C to about 200°C), and/or plasma.
• a temperature ramp e.g., ramping of from about l°C/min to about 200°C/sec, in which such ramping can include decreasing or increasing the temperature
• exposure to heat can include a constant temperature. In other embodiments, exposure to heat can include any useful temperature profile with any useful temperature ramp rates (e.g., of increasing or decreasing temperature) and any useful temperature holds.
• Exposure to UV light can optionally include vacuum and can include any useful temperature (e.g., from about 20°C to about 700°C, such as about 20°C to 100°C, 20°C to 200°C, 20°C to 300°C, 20°C to 400°C, 20°C to 500°C, 20°C to 600°C, 30°C to 100°C, 30°C to 200°C, 30°C to 300°C, 30°C to 400°C, 30°C to 500°C, 30°C to 600°C, 30°C to 700°C, 40°C to 100°C, 40°C to 200°C, 40°C to 300°C, 40°C to 400°C, 40°C to 500°C, 40°C to 600°C, 40°C to 700°C, 50°C to 100°C,
• the SRP, SRP layer, or SRP film is configured to reduce permeation of one or more reactive airborne molecules to a surface of a feature or a substrate.
• the SRP, SRP layer, or SRP film is configured to block one or more reactive sites disposed on a surface of a feature or a substrate. Additional embodiments are described herein.
• alkenyl is meant an optionally substituted C2-24 alkyl group having one or more double bonds.
• the alkenyl group can be cyclic (e.g., C3-24 cycloalkenyl) or acyclic.
• the alkenyl group can also be substituted or unsubstituted.
• the alkenyl group can be substituted with one or more substitution groups, as described herein for alkyl.
• alkoxy is meant -OR, where R is an optionally substituted alkyl group, as described herein.
• exemplary alkoxy groups include methoxy, ethoxy, butoxy, trihaloalkoxy, such as trifluoromethoxy, etc.
• the alkoxy group can be substituted or unsubstituted.
• the alkoxy group can be substituted with one or more substitution groups, as described herein for alkyl.
• Exemplary unsubstituted alkoxy groups include C1-3, Ci-6, Ci-12, Ci- 16, Ci-18, Ci-20, or Ci-24 alkoxy groups.
• alkyl and the prefix “alk” is meant a branched or unbranched saturated hydrocarbon group of 1 to 24 carbon atoms, such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, s-butyl, t-butyl, n-pentyl, isopentyl, s-pentyl, neopentyl, hexyl, heptyl, octyl, nonyl, decyl, dodecyl, tetradecyl, hexadecyl, eicosyl, tetracosyl, and the like.
• the alkyl group can be cyclic (e.g., C3-24 cycloalkyl) or acyclic.
• the alkyl group can be branched or unbranched.
• the alkyl group can also be substituted or unsubstituted.
• the alkyl group can be substituted with one, two, three or, in the case of alkyl groups of two carbons or more, four substituents independently selected from the group consisting of: (1) Ci-6 alkoxy (e.g., -O-Ak, wherein Ak is optionally substituted Ci-6 alkyl); (2) Ci-6 alkylsulfmyl (e.g., -S(0)-Ak, wherein Ak is optionally substituted Ci-6 alkyl); (3) Ci-6 alkylsulfonyl (e.g., -SCh-Ak, wherein Ak is optionally substituted Ci-6 alkyl); (4) amino (e.g., -NR N1 R N2 , where each of R N1 and R N2 is, independently, H or optionally substituted alkyl, or R N1 and R N2 , taken together with the nitrogen atom to which each are attached, form a heterocyclyl group); (5) aryl; (6) arylalkoxy (e.g., -
• the alkyl group can be a primary, secondary, or tertiary alkyl group substituted with one or more substituents (e.g., one or more halo or alkoxy).
• the unsubstituted alkyl group is a Ci-3, Ci-6, Ci-12, C1-16, C1-18, Ci-20, or Ci-24 alkyl group.
• alkylene is meant a multivalent (e.g., bivalent) form of an alkyl group, as described herein.
• exemplary alkylene groups include methylene, ethylene, propylene, butylene, etc.
• the alkylene group is a C1-3, Ci-6, Ci-12, C1-16, C1-18, Ci-20, Ci-24, C2-3, C2-6, C2-12, C2-16, C2-18, C2-20, or C2-24 alkylene group.
• the alkylene group can be branched or unbranched.
• the alkylene group can also be substituted or unsubstituted.
• the alkylene group can be substituted with one or more substitution groups, as described herein for alkyl.
• alkynyl is meant an optionally substituted C2-24 alkyl group having one or more triple bonds.
• the alkynyl group can be cyclic or acyclic and is exemplified by ethynyl, 1-propynyl, and the like.
• the alkynyl group can also be substituted or unsubstituted.
• the alkynyl group can be substituted with one or more substitution groups, as described herein for alkyl.
• amino is meant -NR N1 R N2 , where each of R N1 and R N2 is, independently, H, optionally substituted alkyl, or optionally substituted aryl, or R N1 and R N2 , taken together with the nitrogen atom to which each are attached, form a heterocyclyl group, as defined herein.
• aminoalkyl is meant an alkyl group, as defined herein, substituted by an amino group, as defined herein.
• aralkyl or “arylalkyl” is meant an aryl group, as defined herein, attached to the parent molecular group through an alkylene group, as defined herein.
• the aralkyl group is -Ak-Ar, in which Ak is an optionally substituted alkylene, as defined herein, and Ar is an optionally substituted aryl, as defined herein.
• the aralkyl group can be substituted or unsubstituted.
• the aralkyl group can be substituted with one or more substitution groups, as described herein for aryl and/or alkyl.
• Exemplary unsubstituted aralkyl groups are of from 7 to 16 carbons (C7-16 aralkyl), as well as those having an aryl group with 4 to 18 carbons and an alkylene group with 1 to 6 carbons (i.e., (C4-18 aryl)Ci-6 alkyl).
• aryl is meant a group that contains any carbon-based aromatic group including, but not limited to, phenyl, benzyl, anthracenyl, anthryl, benzocyclobutenyl, benzocyclooctenyl, biphenylyl, chrysenyl, dihydroindenyl, fluoranthenyl, indacenyl, indenyl, naphthyl, phenanthryl, phenoxybenzyl, picenyl, pyrenyl, terphenyl, and the like, including fused benzo- C4-8 cycloalkyl radicals (e.g., as defined herein) such as, for instance, indanyl, tetrahydronaphthyl, fluorenyl, and the like.
• aryl also includes “heteroaryl,” which is defined as a group that contains an aromatic group that has at least one heteroatom incorporated within the ring of the aromatic group.
• heteroatoms include, but are not limited to, nitrogen, oxygen, sulfur, and phosphorus.
• non-heteroaryl which is also included in the term aryl, defines a group that contains an aromatic group that does not contain a heteroatom.
• the aryl group can be substituted or unsubstituted.
• the aryl group can be substituted with one, two, three, four, or five substituents, such as any described herein for alkyl.
• an unsubstituted aryl group is a C4-18, C4-14, C4-12, C4-10, Ce- 18, Ce-14, C6-12, or C6-10 aryl group.
• arylene is meant a multivalent (e.g., bivalent) form of an aryl group, as described herein.
• exemplary arylene groups include phenylene, naphthylene, biphenylene, triphenylene, diphenyl ether, acenaphthenylene, anthrylene, or phenanthrylene.
• the arylene group is a C4-18, C4-14, C4-12, C4-10, Ce-18, Ce-14, C6-12, or Ce-io arylene group.
• the arylene group can be branched or unbranched.
• the arylene group can also be substituted or unsubstituted.
• the arylene group can be substituted with one or more substitution groups, as described herein for aryl.
• (aryl)(alkyl)ene is meant a bivalent form including an arylene group, as described herein, attached to an alkylene or a heteroalkylene group, as described herein.
• the (aryl)(alkyl)ene group is -L-Ar- or -L-Ar-L- or -Ar-L-, in which Ar is an arylene group and each L is, independently, an optionally substituted alkylene group or an optionally substituted heteroalkylene group.
• azido is meant an -N3 group.
• azidoalkyl is meant an azido group attached to the parent molecular group through an alkyl group, as defined herein.
• carboxy aldehyde is meant a -C(0)H group.
• carboxyalkyl is meant an alkyl group, as defined herein, substituted by a carboxyl group, as defined herein.
• carboxyl is meant a -CO2H group.
• cyano is meant a -CN group.
• cycloalkenyl groups include, but are not limited to, cyclopropenyl, cyclobutenyl, cyclopentenyl, cyclopentadienyl, cyclohexenyl, cyclohexadienyl, and the like.
• cycloalkyl is meant a monovalent saturated or unsaturated non-aromatic cyclic hydrocarbon group of from three to eight carbons, unless otherwise specified, and is exemplified by cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, bicyclo[2.2.1.]heptyl, and the like.
• the cycloalkyl group can also be substituted or unsubstituted.
• the cycloalkyl group can be substituted with one or more groups including those described herein for alkyl.
• cycloalkylene is meant a multivalent (e.g., bivalent) form of a cycloalkyl group, as described herein.
• exemplary cycloalkylene groups include cyclopropylene, cyclobutylene, cyclopentylene, cyclohexylene, cyclohexenylene, cyclohexadienylene, etc.
• the cycloalkylene group is a C3-6, C3-12, C3-16, C3-18, C3-20, or C3-24 cycloalkylene group.
• the cycloalkylene group can be branched or unbranched.
• the cycloalkylene group can also be substituted or unsubstituted.
• the cycloalkylene group can be substituted with one or more substitution groups, as described herein for alkyl.
• fluoroacid is meant A 1 C02H, where A 1 is an optionally substituted alkyl or an optionally substituted aryl substituted with one or more fluoro (F).
• esters as used herein is meant -OC(0)A 1 or -C(0)OA 1 , where A 1 can be an alkyl, alkenyl, alkynyl, aryl, heteroaryl, cycloalkyl, cycloalkenyl, heterocycloalkyl, or heterocycloalkenyl group, as described herein.
• ether as used herein is meant A'OA 2 .
• a 1 and A 2 can be, independently, an alkyl, alkenyl, alkynyl, aryl, heteroaryl, cycloalkyl, cycloalkenyl, heterocycloalkyl, or heterocycloalkenyl group, as described herein.
• halo is meant F, Cl, Br, or I.
• haloalkyl is meant an alkyl group, as defined herein, substituted with one or more halo.
• heteroalkyl an alkyl group, as defined herein, containing one, two, three, or four non-carbon heteroatoms (e.g., independently selected from the group consisting of nitrogen, oxygen, phosphorous, sulfur, selenium, or halo).
• heteroalkylene is meant an alkylene group, as defined herein, containing one, two, three, four, or more non-carbon heteroatoms (e.g., independently selected from the group consisting of nitrogen, oxygen, phosphorous, sulfur, selenium, or halo).
• the heteroalkylene group is -Ak-X-, -X-Ak-, -(Ak-X)hi-Ak-, or -X-(Ak-X)hi-, in which Ak is an optionally substituted alkylene, as defined herein, X is or includes a non-carbon heteroatom (e.g., -0-, -S-, or -NR n1 -, which R N1 is H, optionally alkyl, or optionally substituted aryl), and hi is an integer from 1 to 5.
• the heteroalkylene group can be substituted or unsubstituted.
• the heteroalkylene group can be substituted with one or more substitution groups, as described herein for alkyl.
• the heteroalkylene group can be linear or cyclic, such as a bivalent form of a heterocyclyl group formed by removing a hydrogen from a heterocyclyl group, as described herein.
• exemplary cyclic heteroalkylene groups include piperdylidene, quinolinediyl, etc.
• heterocycloalkenyl is a type of cycloalkenyl group, as defined herein, in which at least one of the carbon atoms of the ring is substituted with O, S, N, or NH.
• the cycloalkenyl group and heterocycloalkenyl group can be substituted or unsubstituted.
• the cycloalkenyl group and heterocycloalkenyl group can be substituted with one or more groups including, but not limited to, alkyl, alkoxy, alkenyl, alkynyl, aryl, heteroaryl, carboxyaldehyde, amino, carboxyl, sulfonic acid, sulfinic acid, fluoroacid, phosphonic acid, ester, ether, halo, hydroxyl, ketone, nitro, cyano, azido, silyl, sulfonyl, sulfinyl, or thiol, as described herein.
• groups including, but not limited to, alkyl, alkoxy, alkenyl, alkynyl, aryl, heteroaryl, carboxyaldehyde, amino, carboxyl, sulfonic acid, sulfinic acid, fluoroacid, phosphonic acid, ester, ether, halo, hydroxyl, ketone,
• heterocycloalkyl is a type of cycloalkyl group, as defined herein, in which at least one of the carbon atoms and its attached hydrogen atoms, if any, are replaced by O, S, N, or NH.
• the heterocycloalkyl group and heterocycloalkenyl group can be substituted or unsubstituted.
• the cycloalkyl group and heterocycloalkyl group can be substituted with one or more groups including, but not limited to, alkyl, alkoxy, alkenyl, alkynyl, aryl, heteroaryl, carboxyaldehyde, amino, carboxyl, sulfonic acid, sulfinic acid, fluoroacid, phosphonic acid, ester, ether, halo, hydroxyl, ketone, nitro, cyano, azido, silyl, sulfonyl, sulfinyl, or thiol, as described herein.
• groups including, but not limited to, alkyl, alkoxy, alkenyl, alkynyl, aryl, heteroaryl, carboxyaldehyde, amino, carboxyl, sulfonic acid, sulfinic acid, fluoroacid, phosphonic acid, ester, ether, halo, hydroxyl, ketone, nitro
• heterocyclyl is meant a 3-, 4-, 5-, 6- or 7-membered ring (e.g., a 5-, 6- or 7- membered ring), unless otherwise specified, containing one, two, three, or four non-carbon heteroatoms (e.g., independently selected from the group consisting of nitrogen, oxygen, phosphorous, sulfur, selenium, or halo).
• the 3-membered ring has zero to one double bonds
• the 4- and 5-membered ring has zero to two double bonds
• the 6- and 7-membered rings have zero to three double bonds.
• heterocyclyl also includes bicyclic, tricyclic and tetracyclic groups in which any of the above heterocyclic rings is fused to one, two, or three rings independently selected from the group consisting of an aryl ring, a cyclohexane ring, a cyclohexene ring, a cyclopentane ring, a cyclopentene ring, and another monocyclic heterocyclic ring, such as indolyl, quinolyl, isoquinolyl, tetrahydroquinolyl, benzofuryl, benzothienyl and the like.
• Heterocyclics include acridinyl, adenyl, alloxazinyl, azaadamantanyl, azabenzimidazolyl, azabicyclononyl, azacycloheptyl, azacyclooctyl, azacyclononyl, azahypoxanthinyl, azaindazolyl, azaindolyl, anovanyl, azepanyl, azepinyl, azetidinyl, azetyl, aziridinyl, azirinyl, azocanyl, azocinyl, azonanyl, benzimidazolyl, benzisothiazolyl, benzisoxazolyl, benzodiazepinyl, benzodiazocinyl, benzodihydrofuryl, benzodioxepinyl, benzodioxinyl, benzodio
• hydroxyl is meant -OH.
• hydroxyalkyl is meant an alkyl group, as defined herein, substituted by one to three hydroxyl groups, with the proviso that no more than one hydroxyl group may be attached to a single carbon atom of the alkyl group and is exemplified by hydroxymethyl, dihydroxypropyl, and the like.
• ketone is meant A 1 C(0)A 2 , where A 1 and A 2 can be, independently, an alkyl, haloalkyl, alkenyl, alkynyl, aryl, heteroaryl, cycloalkyl, cycloalkenyl, heterocycloalkyl, or heterocycloalkenyl group, as described herein.
• nitro is meant an -NO2 group.
• oxy is meant -0-.
• phosphonic acid is meant -P(0)(OH)2.
• sil is meant -SiA 1 A 2 A 3 , where each of A 1 , A 2 , and A 3 can be, independently, an alkyl, haloalkyl, alkenyl, alkynyl, aryl, heteroaryl, cycloalkyl, cycloalkenyl, heterocycloalkyl, or heterocycloalkenyl group, as described herein [0069]
• sulfinic acid is meant -S(0)OH.
• sulfinyl is meant -S(0)Ai, where Ai can be hydrogen, an alkyl, haloalkyl, alkenyl, alkynyl, aryl, heteroaryl, cycloalkyl, cycloalkenyl, heterocycloalkyl, or heterocycloalkenyl group, as described herein.
• sulfonic acid is meant -S(0)20H.
• sulfonyl is meant -S(0)2A 1 , where A 1 can be hydrogen, an alkyl, halogenated alkyl, alkenyl, alkynyl, aryl, heteroaryl, cycloalkyl, cycloalkenyl, heterocycloalkyl, or heterocycloalkenyl group, as described herein.
• thio is meant an -S- group.
• thiol is meant an -SH group.
• the term “about” means +/-10% of any recited value. As used herein, this term modifies any recited value, range of values, or endpoints of one or more ranges.
• the terms “top,” “bottom,” “upper,” “lower,” “above,” and “below” are used to provide a relative relationship between structures. The use of these terms does not indicate or require that a particular structure must be located at a particular location in the apparatus.
• FIG. 1A-1C shows flow diagrams showing certain operations in examples semiconductor fabrication processes that use stimulus response polymers (SRPs).
• SRPs stimulus response polymers
• A a method 100 for depositing on sensitive surface
• B a method 120 for depositing to fill a trench or a gap
• C a method 140 for depositing on a high aspect ratio (HAR) structure.
• HAR high aspect ratio
• FIG. 2A-2C shows side cross-sectional view of various structures.
• a structure 200 including an SRP film 203 (B) another structure 220 having a filled trench 222; and (C) yet another structure 240 having an SRP film 243 disposed between a plurality of high aspect ratio (HAR) structures 242.
• HAR high aspect ratio
• FIG. 3A-3B shows process flow diagrams for non-limiting methods of removing SRP.
• FIG. 4 is a functional block diagram of an example of a substrate processing system including multiple substrate processing tools and a storage buffer according to the present disclosure.
• Stimuli responsive polymers may be used in semiconductor fabrication processes as sacrificial layers that can be later removed.
• Low ceiling temperature SRPs can be spontaneously removed when exposed to stimuli such as mildly elevated temperatures or acidic vapors, avoiding aggressive wet or dry removal chemistries that may harm the substrate surface.
• Other processes to remove SRPs are described herein.
• other coatings e.g., silicon nitride
• SRP layers can protect environmentally sensitive surfaces and substrates from chemical modification. For instance, SRPs can protect surfaces from airborne molecular contaminants (AMCs) and block reactive site disposed on the substrate. Sensitive surfaces include substrates during semiconductor processing, such as integrated circuit (IC) fabrication.
• AMCs airborne molecular contaminants
• Sensitive surfaces include substrates during semiconductor processing, such as integrated circuit (IC) fabrication.
• IC integrated circuit
• Such sacrificial films can provide queue-time extension.
• the SRP film can be a thin sacrificial polymer configured to protect sensitive thin-films for extended periods when the materials are vulnerable to external threats.
• the sacrificial surface protection layers can eventually be removed by triggering spontaneous depolymerization and vaporization of the protection layer above its ceiling temperature with the appropriate stimuli (e.g., thermal and/or electromagnetic), thus minimizing the impact on the sensitive surfaces.
• the appropriate stimuli e.g., thermal and/or electromagnetic
• Examples of surfaces that can be sensitive to environmental queue-time effects include but are not limited to silicon, silicon/germanium (Si/Ge), copper, tungsten, cobalt, and titanium nitride (TiN).
• SRPs can be used to brace HAR structures during processing, thereby minimizing collapse of such features.
• Depositing a low ceiling temperature homopolymer onto HAR structures can both protect the surfaces from being modified, as well as prevent collapse from capillary forces during solvent drying by mechanically bracing the features. If the homopolymer brace is removed properly, it also enables collapse-free drying of high aspect ratio structures.
• the SRP can be a low ceiling temperature (T c ) homopolymer that is thermodynamically unstable at room temperature.
• T c is the temperature at which both the polymer and its monomers are present at equilibrium. Below T c , it is a polymer and above T c it is monomer.
• Such low T c polymers can be kinetically trapped as polymers with excellent shelf-life at temperatures well above T c .
• poly(phthalaldehyde) (PPHA) has a T c of -40°C but is stable at room temperature for 2.5 years. Stability is achieved by kinetically inhibiting the mechanism of depolymerization.
• benefits for employing a homopolymer as an SRP includes simplified and/or less costly polymerization to form a film, as well as simplified synthesis due to fewer variables.
• the SRP can be deposited in any useful manner.
• wet deposition of the homopolymer protection layer can include spin coating, in which the formulation of the spin coating solution and eventual protection layer can be important for its performance.
• the choice of solvent that is used for the spin coating formulation can impact the amount of residual solvent that remains in the homopolymer thin films. Residual solvent can plasticize the homopolymer, lowering its glass transition temperature. By plasticizing the homopolymers, we can better fill HAR features and relax stresses from the spin coating process at temperatures below the degradation temperature of the homopolymer.
• the homopolymer can be formulated with weak organic acids (e.g., pKa > 1). These weak organic acids can catalyze the degradation of the SRP without compromising the film stability. By catalyzing the homopolymer degradation, we can lower the onset degradation temperature and increase the degradation rate.
• weak organic acids e.g., pKa > 1
• FIG. 1A an example of a method 100 for protecting a sensitive surface is shown.
• a substrate including a sensitive surface is provided.
• the SRP is deposited on the surface, in which the SRP can be deposited as a formulation.
• the substrate is then dried in an operation 105.
• the SRP solidifies as the liquid portion solution is removed, thereby forming a film.
• the substrate having the SRP can be stored in an operation 107.
• a non-limiting structure 200 having such a film 203 disposed upon a substrate 201 is provided in FIG. 2 A.
• the substrate is exposed to a stimulus to degrade all of or only a portion of the SRP, thereby removing the SRP from the substrate in an operation 109.
• Volatile monomers or fragments from the degraded polymer can be removed.
• operation 109 may involve controlled exposure to a condition, a compound, or two reactants that react to form a compound that degrades the SRP.
• the stimulus can be any that scissions bonds of the SRP to degrade it.
• the stimulus includes heat or radiation.
• the compound is a relatively strong acid or base.
• FIG. IB an example of a method 120 for filling a trench or a gap is shown.
• a substrate including a trench or a gap is provided.
• the SRP is deposited on the surface to fill the trench or the gap.
• the substrate is then dried in an operation 125.
• the SRP solidifies to form a film, and a non-limiting structure 220 having such a film 223 disposed within a trench 222 on a substrate 221 is provided in FIG. 2B.
• the film can then be stored in an operation 127, and removal occurs in an operation 129.
• the substrate is exposed to a stimulus to degrade all of or only a portion of the SRP, thereby removing the SRP from the substrate in an operation 109. Volatile monomers or fragments from the degraded polymer can be removed. Removing an SRP from a substrate can include controlled degradation of the entire SRP film or a portion thereof.
• operation 109 may involve controlled exposure to a condition, a compound, or two reactants that react to form a compound that degrades the SRP.
• the stimulus can be any that scissions bonds of the SRP to degrade it.
• the stimulus includes heat or radiation.
• the compound is a relatively strong acid or base.
• HAR structures are structures having high aspect ratios (ARs), e.g., at least 8, 10, 20, 30, 40, or 80.
• ARs high aspect ratios
• the substrate may be provided, for example, after a wet etch or cleaning operation and have solvent associated with the prior operation.
• the solvent in operation 141 may be a transitional solvent if the prior solvent is not chemically compatible with the SRP solution.
• the solvent is displaced with a solution that includes an SRP.
• the substrate is then dried in an optional operation 145.
• the SRP solidifies as the liquid portion solution is removed, and the SRP fills the HAR structures.
• a mechanical brace forms in the HAR structures to prevent collapse of the structures due to capillary forces that are generated during solvent drying.
• a non-limiting structure 240 having such a film 243 on and between a plurality of HAR structures 242 disposed on a substrate 241 is provided in FIG. 2C.
• the substrate having the SRP can be stored in an operation 147. Then, the substrate is exposed to a stimulus to degrade all of or only a portion of the SRP, thereby removing the SRP from the substrate in an operation 149.
• One method for depolymerizing the material includes exposing the polymer to elevated temperature under vacuum conditions. This method can lead to a rapid volatilization of the polymer, however angstrom-level residues, composed of char and residual monomer, often remain on the surface.
• SRPs can be removed by using a less aggressive trigger, such as light or mild temperatures. These sacrificial polymers could allow protection of the sensitive surfaces and subsequent removal of the barrier film without exposing the surfaces to aggressive plasmas or wet chemical solutions. For certain challenging applications, there may be limitations to the temperature at which the substrates can be exposed, or extremely stringent contamination or throughput requirements.
• the SRPs and films thereof can be designed to address these applications.
• benefits for employing a homopolymer as an SRP may include a stronger driving force for depolymerization and/or a lower likelihood of having side reactions during unzipping, as compared to copolymers.
• SRP removal processes can provide lower contamination levels.
• SRP removal processes provide a lower contamination level with removal conditions that are milder than that for silicon nitride removal.
• the homopolymer is exposed to long-lived metastable species from a noble gas plasma under vacuum at elevated temperature.
• the homopolymer is exposed to infrared (IR) or ultraviolet (UV) radiation at elevated temperature while under vacuum.
• IR infrared
• UV ultraviolet
• Other processes include high temperature exposure (e.g., about 50°C to about 800°C) under vacuum conditions (e.g., ⁇ 760 Torr) for a limited exposure time.
• Another process can include simultaneous high temperature exposure and radiation exposure by either UV or IR, which are under vacuum.
• Yet another process can include simultaneous high temperature exposure and noble gas metastable exposure, which are under vacuum.
• these removal processes have also shown low contamination without increasing the surface modification of the sensitive substrates.
• FIG. 3A-3B shows process flow diagrams showing further examples of a method of controlled exposure to a stimulus to degrade the SRP.
• a substrate is provided with SRP film in an operation 301.
• Operations 302-306 provide exposure to various types of stimuli, in which operations 302-306 may be used alone or in combination. Examples of apparatus that the substrate may be provided to are described below with reference to FIG. 4.
• operation 301 involves providing the substrate to a processing chamber. In other embodiments, the substrate is in the chamber from a previous processing operation.
• the SRP may be provided in a variety of forms - for example, in a gap between features of a structure or as blanket film on all or part of a substrate.
• the substrate can be exposed to heat in an operation 302.
• Heat can be provided as a constant temperature hold.
• heat can be provided as a ramped temperature, in which increasing or decreasing temperature ramping can be used between temperature holds.
• Such thermal energy can provide sufficient energy to depolymerize the SRP by providing heat at a temperature that is above the T c .
• Such conditions can include exposure to a temperature of up to 400°C for an SRP having a T c that is below 400°C, in which the SRP is kinetically trapped below the T c .
• thermal exposure can include a temperature from about 50°C to about 800°C (e.g., about 50°C to 150°C, 50°C to 300°C, 50°C to 500°C, 150°C to 300°C, 150°C to 400°C, 150°C to 500°C, 200°C to 400°C, 200°C to 500°C, 200°C to 600°C, 250°C to 500°C, 250°C to 600°C, 300°C to 500°C, 300°C to 550°C, 300°C to 600°C, etc.).
• thermal exposure includes from about 300°C to about 500°C (e.g., for removing films including pure SRP).
• thermal exposure includes exposure to an elevated temperature (e.g., up to 800°C) with a fast ramp rate and a shorter time.
• an elevated temperature e.g., up to 800°C
• additives e.g., a photoacid generator (PAG) or any herein
• the temperature for removal can be between about 50°C and about 125°C, in addition to exposure to other stimulus that can beneficially activate the additive (e.g., UV exposure to activate the PAG).
• exposure time can be from about 20 seconds to about 400 seconds (e.g., about 30 to 300 seconds). Thicker films can require longer exposure to heat for SRP removal, as compared to thinner films. Film thickness required will be application dependent. For instance, some removal thermal processes (e.g., using a rapid thermal processor (RTP)) can include higher temperatures (e.g., more than about 400°C) for very short times (e.g., one to two seconds of exposure for RTP, as well as millisecond exposure times for flash lamp type processes). For applications that are thermal budget sensitive, RTP -type conditions can be employed, whereas other processes may employ a hot plate under vacuum.
• RTP rapid thermal processor
• the SRP can be removed by exposure to radiation (e.g., UV radiation or IR radiation), either with or without vacuum, in an operation 303.
• radiation e.g., UV radiation or IR radiation
• process conditions include exposure to about 400°C under vacuum at about 2.5 W/cm 2 UV dose rate.
• process conditions e.g., for an SRP employed with a photoacid generator
• exposure can include from about 100 seconds to about 400 seconds (e.g., about 300 seconds).
• exposure time can be from about 20 seconds to about 400 seconds (e.g., about 30 to 300 seconds). Thicker films can require longer exposure to radiation (e.g., UV) for SRP removal, as compared to thinner films. Film thickness required will be application dependent. For films with acid generating additives (e.g., PAG), the exposure times may range from two minutes to ten minutes. Exposure time can depend on many conditions, including the loading of the additives, wafer temperature, UV dose rate, and film thickness. These requirements, in turn, will be application dependent (e.g., depend on feature dimensions, aspect ratio, pattern density, etc.).
• Radiation dosage can be, e.g., from about 0.1 mW/cm 2 to about 15 W/cm 2 for UV.
• lower dose rates can be employed, e.g., from about 0.01 to about 0.07 mW/cm 2 .
• higher dose rates can be employed, e.g., about 2.5 W/cm 2 .
• the higher the dose rate the cleaner the removal.
• radiation exposure can also be application dependent, and excessive radiation can be avoided to mitigate substrate damage.
• the substrate can be maintained at an elevated temperature (e.g., from about 300°C to about 500°C, including about 400°C).
• elevated temperature e.g., from about 300°C to about 500°C, including about 400°C.
• acid generating additives e.g., PAG
• lower temperatures can be combined with UV exposure to provide a controlled degradation rate (e.g., temperature range of about 50°C to about 125°C or from about 100°C to about 110°C).
• Metastable atoms are employed in another operation 304.
• the metastable atoms can be generated from a noble gas plasma, the noble gas being one or more of helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), to remove residue from the substrate.
• the metastable species are not chemically reactive and do not appreciably affect the underlying surface.
• the metastable species from the noble gas plasma can be effective at removing residues that remain after exposure to other stimuli such as heat.
• removing SRPs includes exposure to high energy metastable species, generated in a noble gas plasma, at an elevated temperature.
• the metastable species have sufficient energies and lifetimes to scission bonds on the polymer or other residues. At temperatures greater than the ceiling temperature, there is a strong thermodynamic driving force to revert to volatile monomers once bond scissioning has occurred.
• the metastable species are not chemically reactive and do not appreciably affect the underlying surface.
• the metastable species are effective at removing residue that remains after exposure to other stimuli such as heat. This residue may be some SRP that remains polymerized or cross-linked and/or carbonized shards that is detectable by ellipsometry.
• the metastables may remove residues by re-initiating chain scissioning that may have stopped prematurely due to side product formation, by breaking down char that may have formed during the depolymerization process, and by aiding monomer desorption.
• the plasma pressure is between about 10 mTorr to 10 Torr. In some embodiments, the plasma pressure is between about 100 mTorr and 1 Torr. In some embodiments, the SRP is provided between HAR structures. In some embodiments, the SRP is provided as a protective coating on substrate. In some embodiments, the plasma is generated in an inductively coupled plasma (ICP) source. In some such embodiments, the ICP source is separated from the substrate by a showerhead or other filter.
• ICP inductively coupled plasma
• the plasma is generated in capacitively coupled plasma (CCP) source. Any other type of plasma source may be used.
• CCP capacitively coupled plasma
• exposing the substrate to a stimulus and exposing the substrate to the metastable atoms are performed in the same chamber.
• Processing and plasma source chamber pressure may be used to control the plasma- based removal. Pressure is important to control the density of the metastable atoms. If pressure is too low, the density of metastable atoms may not be high enough to efficiently clean the surface. If the pressure is too high, metastable species may be lost to collisions.
• Example pressures may range from 10 mTorr to 10 Torr, 100 mTorr to 1 Torr, 100 mTorr to 700 mTorr, 200 mTorr to 1 Torr, or 200 mTorr to 2 Torr.
• Substrate temperature and plasma power may also be used to control removal. Temperature is high enough such that it is above the ceiling temperature of the polymer. Higher temperatures aid removal with the maximum temperature limited by the thermal budget of the device or other materials on the substrate.
• Example temperatures may range from 150°C to 1000°C or from 150°C to 400°C.
• Plasma power is high enough to generate metastable atoms.
• Example powers may range from 500 W to 5000 W or from 800 W to 5000 W, e.g., 2500 W for a 300 mm wafer, and scale linearly with substrate area.
• Example exposure times may range from 10 seconds to 300 seconds or from 10 seconds to 180 seconds.
• yet other conditions include exposure to acidic or basic vapors in an operation 305 or exposure to plasma in an operation 306.
• vapors can be provided by a reactant, such as an acid (e.g., having a pKa of less than 7, and in some embodiments less than 4, or less than 2) or a base (e.g., having a pKb of less than 7, and in some embodiments, less than 4 or less than 2).
• a reactant such as an acid (e.g., having a pKa of less than 7, and in some embodiments less than 4, or less than 2) or a base (e.g., having a pKb of less than 7, and in some embodiments, less than 4 or less than 2).
• Non-limiting reactants include sulfurous acid, nitric acid, carbonic acid, or ammonium hydroxide.
• a catalyst can be used with the acid, base, or a reactant that forms the acid or base.
• Non-limiting catalysts include hydrogen bromide (HBr), hydrogen chloride (HC1), hydrogen fluoride (HF), hydrogen iodide (HI), nitric acid (HNCh), formic acid (CH2O2), acetic acid (CH3COOH), formonitrile (HCN), sulfurous acid (H2SO3), carbonic acid (H2CO3), nitrous acid (HNO2), or ammonia (NH3), and methyl or ethyl amine gas or vapor may be used.
• the substrate when HBr vapor is used, the substrate is maintained at a pressure in a range from 1 mTorr to 5000 mTorr (e.g., from 5 mTorr to 5000 mTorr) and a temperature in a range from 0°C to 200°C (e.g., from 0°C to 100°C). In some examples, the substrate is maintained at a pressure in a range from 750 mTorr to 1500 mTorr and a temperature in a range from 35°C to 70°C. In some examples, the temperature of the substrate is maintained at a pressure of 1000 mTorr and a temperature of 60°C.
• Exposure time can depend on the strength of the acid or base, as well as film thickness and exposure temperature (e.g., from about 20°C to about 125°C or from about 100°C to about 125°C).
• Non-limiting exposure time can include less than about 60 seconds or on the order of minutes.
• a method 320 can include providing a substrate with an SRP film in an operation 321. Then, a stimulus that degrades SRP is pulsed in the chamber in an operation 323. Such stimulus can include exposure to a compound (e.g., an acid, a base, a compound that forms an acid or base, plasma, metastable compounds, etc.) or a reaction condition (e.g., UV radiation, IR radiation, heat, etc.). In some embodiments, removal includes exposure to heat and/or radiation, thus eliminating the need for plasma and/or harsh wet chemistries that will modify the sensitive surfaces that need to be protected.
• a compound e.g., an acid, a base, a compound that forms an acid or base, plasma, metastable compounds, etc.
• a reaction condition e.g., UV radiation, IR radiation, heat, etc.
• the partial pressure of the vapor and/or the pulse time can be controlled to control the overall exposure to the vapor and the diffusion depth.
• the chamber can be purged in an operation 325. Purging can involve evacuating the chamber and/or flowing inert gas to be swept out through the chamber. Such a gas may be, for example, continuously flowing including during operation 323 or may be itself pulsed into the chamber. During operation 325, volatilized monomer or SRP fragment may be pumped or purged out of the chamber. Operations 323 and 325 are repeated until the SRP is removed in an operation 327. As indicated above, in some embodiments, the SRP is exposed to reactants sequentially in each cycle. This can provide additional control over the process and may be implemented in various ways.
• removal can include exposure to two reactants that react to form an acid or base that can trigger the degradation of the SRP.
• the exposure occurs sequentially to provide more precise top down control.
• the methods involve diffusing a compound, or a reactant that reacts to form a compound, only to a top portion of the SRP. The top portion is then degraded and removed, leaving the remaining SRP intact.
• the exposure and removal cycles can be repeated.
• a purge operation can follow the exposure operation to remove the compound or reactant from the chamber.
• Non-limiting reactants can include water vapor with one of ammonia (NTb) or a gaseous oxide, which reacts with the water vapor to an acidic or basic species.
• NTb ammonia
• a gaseous oxide which reacts with the water vapor to an acidic or basic species.
• NFb and water can react to form ammonium hydroxide (NH4OH).
• gaseous oxides include nitrogen dioxide (NO2, which can react with water to form nitric acid, HNO3), sulfur dioxide (SO2, which can react with water to form sulfurous acid, H2SO3), and carbon dioxide (CO2, which can react with water to form carbonic acid, H2CO3).
• NO2 nitrogen dioxide
• SO2SO3 sulfur dioxide
• CO2 carbon dioxide
• Other oxides may react with water or another reactant to form acids or bases.
• the reaction may be catalyzed or uncatalyzed.
• a catalyst e.g., athermally activated catalyst
• the reaction is uncatalyzed such that SRP is provided free of catalysts. This can facilitate SRP removal.
• the reaction is byproduct-free.
• the SRPs are low ceiling temperature (T c ) polymers.
• T c is the equilibrium temperature between a polymer and its monomers.
• the term low Tc refers to T c values below a removal temperature.
• the T c is below room temperature, such that the polymers are thermodynamically unstable at room temperature. Instead, the low T c polymer is kinetically trapped to allow prolonged storage at room temperature. In some examples, the stable storage period is on the order of months or years. Low T c polymers will rapidly de-polymerize to its monomer constituents if an end- group or main chain bond is broken.
• the polymer de-polymerizes in response to stimuli such as ultraviolet (UV) light, heat, thermal catalyst, photocatalyst, or an acidic/basic catalyst.
• stimuli such as ultraviolet (UV) light, heat, thermal catalyst, photocatalyst, or an acidic/basic catalyst.
• UV ultraviolet
• the monomer products are volatile and leave or can be easily removed from the surface and chamber.
• the T c is below room temperature
• low T c may also refer to ceiling temperatures that are higher than room temperature.
• removal temperatures of up to 400°C may be used, meaning that the ceiling temperature is below 400°C.
• SRPs are provided below. However, the methods described herein may be used with any SRPs.
• the SRPs are homopolymers including poly(aldehydes).
• they may be self-immolative polymers as described in U.S. Patent Publication No. 2018/0155483, which was published on June 7, 2018 and which is hereby incorporated herein by reference in its entirety.
• SRPs can be any appropriate homopolymer in linear or cyclic form.
• Non-limiting SRPs include a poly(phthalaldehyde), a poly(aldehyde), a poly(benzyl carbamate), a poly(benzyl ether), a poly(alpha-methyl styrene), a poly(carbonate), a poly(norbomene), a poly(olefm sulfone), a poly(glyoxylate), a poly(glyoxylamide), a poly(ester), or a poly(methyl methacrylate), as well as derivatives thereof.
• Such derivatives can include replacement of oxy (-0-) with an optionally substituted heteroalkylene, as defined herein, as well as substitutions with one or more substitution groups, as described herein for alkyl.
• SRPs can include those having a structure of one of formulas (I)-(XV), (la), (lb), or (Ic).
• Such SRPs can be a linear polymer or a cyclic polymer. If linear, the polymer can include any useful end groups that terminate the molecule. Such end groups can depend on the reactive end groups present on the monomers employed to synthesize the polymer.
• end groups can include those fragments formed from use of an anionic initiator (e.g., fragments such as alkyl anion, e.g., present in n-BuLi, s-BuLi, etc.), from use of an acylation or alkylation reagent (e.g., fragments such as acyl or optionally substituted alkanoyl, such as formyl, acetyl, benzoyl, methyl, ethyl, etc.), from use of a conjugated alkylene monomer (e.g., such as a quinone methide monomer), or from use of an alcohol termination agent (e.g., fragments such as optionally substituted alkoxy).
• an anionic initiator e.g., fragments such as alkyl anion, e.g., present in n-BuLi, s-BuLi, etc.
• an acylation or alkylation reagent e.g., fragments such as acyl
• the end groups can include any useful binding group or a reactive group (e.g., those including optionally substituted trialkylsiloxy, optionally substituted alkenyl, optionally substituted aryl, etc.) ⁇
• the SRP can include a poly(phthalaldehyde) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (I): or a salt thereof, wherein each Ri is, independently, H, optionally substituted alkyl, optionally substituted alkoxy, optionally substituted alkenyl, optionally substituted aryl, or halo; each of R2 1 and R2 11 is, independently, H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl; each of Zi and Z2 is, independently, -0-, -S-, or optionally substituted heteroalkylene; rl is an integer from 1 to 4; and n is from about 2 to about 100,000.
• each Ri is, independently, H, optionally substituted alkyl, optionally substituted alkoxy, optionally substituted alkenyl, optionally substituted aryl, or halo
• each of R2 1 and R2 11 is, independently, H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl
• each of R2 1 and R2 11 is, independently, H or optionally substituted alkyl.
• each of Zi and Z2 is -0-.
• the SRP can include a poly(aldehyde) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (II): or a salt thereof, wherein: each of R2 and R3 is, independently, H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl;
• the SRP can include a poly(benzyl carbamate) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (III): or a salt thereof, wherein: each Ri is, independently, H, optionally substituted alkyl, optionally substituted alkoxy, optionally substituted alkenyl, optionally substituted aryl, or halo; each of R2 and R3 is, independently, H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl;
• R4 is H or optionally substituted alkyl
• Zi is -0-, -S-, or optionally substituted heteroalkylene; rl is an integer from 1 to 4; and n is from about 2 to about 100,000.
• Ri is optionally substituted alkoxy.
• n is from about 2 to about 100 (e.g., from about 2 to 10, 2 to 15, 2 to 20, 2 to 25, 2 to 30, 2 to 40, 2 to 50, 2 to 75, 4 to 10, 4 to 15, 4 to 20, 4 to 25, 4 to 30, 4 to 40, 4 to 50, 4 to 75, and 4 to 100).
• the SRP can include a poly(benzyl ether) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (IV): or a salt thereof, wherein: each Ri is, independently, H, optionally substituted alkyl, optionally substituted alkoxy, optionally substituted alkenyl, optionally substituted aryl, or halo;
• R2 is H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl;
• Ar is optionally substituted aryl, optionally substituted alkyl, or optionally substituted aralkyl;
• Zi is -0-, -S-, or optionally substituted heteroalkylene; rl is an integer from 1 to 4; and n is from about 2 to about 100,000.
• Ri is optionally substituted alkyl.
• Ar is optionally substituted phenyl.
• n is from about 2 to about 5000.
• the SRP can include a poly(benzyl dicarbamate) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (V): or a salt thereof, wherein: each Ri is, independently, H, optionally substituted alkyl, optionally substituted alkoxy, optionally substituted alkenyl, optionally substituted aryl, or halo; each of R2 and R3 is, independently, H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl; each of R4 1 and R4 11 is, independently, H or optionally substituted alkyl;
• Li is optionally substituted alkylene, optionally substituted heteroalkylene, optionally substituted arylene, or optionally substituted cycloalkylene; each of Zi and Z2 is, independently, -0-, -S-, or optionally substituted heteroalkylene; rl is an integer from 1 to 4; and n is from about 2 to about 100,000.
• Ri is optionally substituted alkyl.
• Ar is optionally substituted phenyl.
• n is from about 2 to about 5000.
• each of R4 1 and R4 11 is, independently, optionally substituted alkyl.
• Li is optionally substituted alkylene.
• Zi and Z2 is -0-.
• the SRP can include a poly (dicarbamate) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (VI): or a salt thereof, wherein: each of R4 1 and R4 11 is, independently, H or optionally substituted alkyl; each of Li and L2 is, independently, optionally substituted alkylene, optionally substituted heteroalkylene, optionally substituted arylene, or optionally substituted cycloalkylene, in which L2 can optionally be a covalent bond; each of Zi and Z2 is, independently, -0-, -S-, or optionally substituted heteroalkylene; n is from about 2 to about 100,000.
• each of R4 1 and R4 11 is, independently, H or optionally substituted alkyl
• each of Li and L2 is, independently, optionally substituted alkylene, optionally substituted heteroalkylene, optionally substituted arylene, or optionally substituted cycloalkylene, in which L2 can optionally be a covalent bond
• each of Zi and Z2 is, independently, -0-, -S-,
• each of R4 1 and R4 11 is, independently, optionally substituted alkyl.
• each of Li and L2 is, independently, optionally substituted alkylene.
• each of Zi and Z2 is, independently, - O- or -S-.
• the SRP can include a poly (alpha-methyl styrene) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (VII): or a salt thereof, wherein: each of R2 1 , R2 11 , and R3 is, independently, H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl;
• the SRP can include a poly(carbonate) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (VIII): or a salt thereof, wherein:
• Li is optionally substituted alkylene, optionally substituted heteroalkylene, optionally substituted arylene, or optionally substituted cycloalkylene; and n is from about 2 to about 100,000.
• Li is optionally substituted alkylene, optionally substituted heteroalkylene, or optionally substituted cycloalkylene.
• the optionally substituted heteroalkylene is -X-Ak-X-, in which X is oxy and Ak is optionally substituted alkylene.
• Non-limiting SRPs can include poly(ethylene carbonate), polypropylene carbonate) (PPC), poly(butylene carbonate) (PBC), poly(cyclohexene carbonate) (PCHC), pohfnorbornene carbonate) (PNC), and poly(cyclohexene propylene carbonate) (PCPC).
• the SRP can include a poly(norbomene) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (IX): or a salt thereof, wherein:
• R3 is H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl; and n is from about 2 to about 100,000.
• the SRP can include a poly(olefm sulfone) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (X): or a salt thereof, wherein:
• R3 is H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl; and n is from about 2 to about 100,000.
• R3 is optionally substituted heteroalkyl, such as, e.g., -OC(0)-R 01 , -NR N1 -C(0)-R 01 , -OC(0)NR N1 R N2 , -(Ak-O)hiR 01 or - Ak-NR N1 R N2 , in which Ak is optionally substituted alkylene, hi is from 1 to 5, and each of R 01 , R N1 , and R N2 is, independently, H or optionally substituted alkyl (e.g., hydroxyalkyl, carboxyalkyl, aminoalkyl, or azidoalkyl).
• heteroalkyl such as, e.g., -OC(0)-R 01 , -NR N1 -C(0)-R 01 , -OC(0)NR N1 R N2 , -(Ak-O)hiR 01 or - Ak-NR N1 R N2 , in which Ak is optionally substituted alkylene, hi is from 1 to 5, and each
• the SRP can include a poly(glyoxylate) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (XI): or a salt thereof, wherein:
• R.3 is H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl; and n is from about 2 to about 100,000.
• R.3 is optionally substituted alkyl or optionally substituted heteroalkyl, such as, e.g., -(Ak-O)hiR 01 or -Ak-NR N1 R N2 , in which Ak is optionally substituted alkylene, hi is from 1 to 5, and each of R 01 , R N1 , and R N2 is, independently, H or optionally substituted alkyl.
• optionally substituted alkyl or optionally substituted heteroalkyl such as, e.g., -(Ak-O)hiR 01 or -Ak-NR N1 R N2 , in which Ak is optionally substituted alkylene, hi is from 1 to 5, and each of R 01 , R N1 , and R N2 is, independently, H or optionally substituted alkyl.
• the SRP can include a poly(methyl methacrylate) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (XII): or a salt thereof, wherein: each of R2 and R3 is, independently, H, optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aryl; and n is from about 2 to about 100,000.
• R2 is optionally substituted alkyl.
• R3 is optionally substituted alkyl or optionally substituted heteroalkyl, such as, e.g., -(Ak-O)hiR 01 or -Ak-NR N1 R N2 , in which Ak is optionally substituted alkylene, hi is from 1 to 5, and each of R 01 , R N1 , and R N2 is, independently, H or optionally substituted alkyl.
• the SRP can include a poly(glyoxylamide) or a derivative thereof, which can be a homopolymer that is linear or cyclic.
• the SRP is or includes a structure of formula (XIII): or a salt thereof, wherein: each of R4 and R4 is, independently, H, optionally substituted alkyl, optionally substituted aminoalkyl, optionally substituted heteroalkyl, or R4, and R4 , taken together with the nitrogen atom to which each are attached, form a heterocyclyl group, as defined herein; and n is from about 2 to about 100,000.
• each of R4 1 and/or R4 11 is optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aminoalkyl, such as, e.g., -(Ak-O)hiR 01 or -Ak-NR N1 R N2 , in which Ak is optionally substituted alkylene, hi is from 1 to 5, and each of R 01 , R N1 , and R N2 is, independently, H or optionally substituted alkyl.
• R4 1 is H or alkyl
• R4 11 is optionally substituted alkyl, optionally substituted heteroalkyl, or optionally substituted aminoalkyl (e.g., as described above).
• R4 1 , and R4 11 taken together with the nitrogen atom to which each are attached, form a heterocyclyl group, as defined herein.
• Non-limiting heterocyclyl groups include pyrrolidinyl, piperidinyl, morpholinyl, oxazolyl, isoxazolyl, pyrrolyl, pyrazolyl, and the like.
• the SRP can be a poly(aldehyde), including poly(phthalaldehyde) or a generic poly(aldehyde) with a backbone consisting of alternating carbon and oxygen, including poly(oxymethylene).
• Such SRPs can be a linear or a cyclic homopolymer.
• the SRP can be a poly(phthalaldehyde) or a derivative thereof, such as a polymer including a structure of formula (la): or a salt thereof, for any Ri, R2, R2 , rl, and n described herein. In some instances, n is an integer from 4 to 100,000.
• the poly(phthalaldehyde) is cyclic.
• the polymer has structure of formula (lb) or (Ic): or a salt thereof, or any Ri, R5, R6, R2, R2 , R3, R3 , R4, R4 , Zi, Z2, Z3, Z4, Z5, Zb, rl, r5, r6, and nl described herein.
• nl is an integer from 1 to 100.
• each of Zi to Zb, Li, and L2 is, independently, an optionally substituted heteroalkylene selected from - CR2R3O-, -OCR2R3-, -OCR2R3O-, -(CR2R3S)hiCR2R 3 -, -S(CR2R 3 S)hi-, -CR2R3S-, -SCR2R3-, -SCR2R3S-, -(CR2R3S)hiCR 2 R3-, and -S(CR 2 R3S)hi-, in which each of R 2 and R 3 is, independently, H, optionally substituted alkyl, or optionally substituted aryl, and hi is an integer from 1 to 5.
• each of Zi to Zb, Li, and L2, if present is, independently, -O- or an optionally substituted heteroalkylene selected from - CR2R3O-, -OCR2R3-, -OCR2R3O-
• each of R2, R2, and R2 is, independently, H or optionally substituted alkyl (e.g., Ci-6 alkyl).
• R3 is optionally substituted aryl.
• R3 is optionally substituted heteroalkyl, such as, e.g., -OC(0)-R 01 , -NR N1 -C(0)-R 01 , - OC(0)NR N1 R N2 , -(Ak-O)hiR 01 or -Ak-NR N1 R N2 , in which Ak is optionally substituted alkylene, hi is from 1 to 5, and each of R 01 , R N1 , and R N2 is, independently, H or optionally substituted alkyl (e.g., hydroxyalkyl, carboxyalkyl, aminoalkyl, or azidoalkyl).
• heteroalkyl such as, e.g., -OC(0)-R 01 , -NR N1 -C(0)-R 01 , - OC(0)NR N1 R N2 , -(Ak-O)hiR 01 or -Ak-NR N1 R N2 , in which Ak is optionally substituted alkylene, hi is from 1
• the polymer is a homopolymer.
• a polymer can have any useful number n of monomers, such as n is from about 2 to about 100,000 (e.g., about 2 to 50, 2 to 100, 2 to 200, 2 to 300, 2 to 400, 2 to 500, 2 to 1,000, 2 to 2,000, 2 to 5,000, 2 to 10,000, 2 to 20,000, 2 to 50,000, 2 to 100,000, 3 to 50, 3 to 100, 3 to 200, 3 to 300, 3 to 400, 3 to 500, 3 to 1,000, 3 to 2,000, 3 to 5,000, 3 to 10,000, 3 to 20,000, 3 to 50,000, 3 to 100,000, 4 to 50, 4 to 100, 4 to 200, 4 to 300, 4 to 400, 4 to 500, 4 to 1,000, 4 to 2,000, 4 to 5,000, 4 to 10,000, 4 to 20,000, 4 to 50,000, 4 to 100,000, 5 to 50, 5 to 100, 5 to 200, 5 to 300, 5 to 400, 5 to 500, 5 to 1,000, 5 to 2,000, 5 to 2,000
• the SRPs may also be any appropriate linear or cyclic copolymer including the pure phthalaldehyde homopolymer, a homopolymer of poly(phthalaldehyde) derivatives such as poly(4,5-dichlorophthalaldehyde), or a homopolymer of poly(aldehyde) derivatives.
• SRPs can include a copolymer including a structure of one of formulas (I)-(XIII), (la), (lb), (Ic), or a salt thereof, as well as any copolymer described herein (e.g., one of formulas (XIV) or (XV)).
• the SRPs are copolymers including poly(aldehydes). In particular embodiments, they may be self- immolative polymers as described in U.S. Patent Publication No. 2018/0155483, which was published on June 7, 2018 and which is hereby incorporated herein by reference in its entirety. Examples of copolymers in that reference include those of Formula (XIV): wherein:
• R is substituted or unsubstituted Ci-20 alkyl, Ci-20 alkoxy, C2-20 alkenyl, C2-20 alkynyl, Ce-io heteroaryl, C3-10 cycloalkyl, C3-10 cycloalkenyl, C3-10 heterocycloalkyl, or C3-10 heterocycloalkenyl; and, when substituted, R is substituted with Ci-20 alkyl, Ci-20 alkoxy, C2-20 alkenyl, C2-20 alkynyl, Ce-io aryl, Ce-io heteroaryl, carboxyaldehyde, amino, sulfonic acid, sulfmic acid, fluoroacid, phosphonic acid, ether, halo, hydroxyl, ketone, nitro, cyano, azido, silyl, sulfonyl, sulfmyl, or thiol.
• the SRPs are cyclic copolymers of the phthalaldehyde monomer with a second aldehyde such as ethanal, propanal, or butanal.
• a second aldehyde such as ethanal, propanal, or butanal.
• n is an integer from 1 to 100,000 and R can be any described herein (e.g., such as for Formula (XIV)).
• U.S. Patent Publication No. 2018/0155483 include copolymers of phthalaldehyde and one or more of acetaldehyde, propanal, butanal, pentanal, hexanal, heptanal, octanal, nonanal, decanal, undecanal, propenal, butenal, pentenal, hexenal, heptenal, octenal, nonenal, decenal, undecenal, and any combination thereof.
• the SRPs may also be any appropriate linear or cyclic copolymer including the pure phthalaldehyde homopolymer. It also may be a homopolymer of poly(phthalaldehyde) derivatives such as poly(4,5-dichlorophthalaldehyde).
• the SRP is a homopolymer possessing a low MW, thereby providing a low viscosity polymer for filling gaps.
• the SRP includes a monomer that is or has a structure of any of formulas (I)-(XV), (la), or a salt thereof, in which n is 1, which is then linked to another monomer by way of a linker.
• Non-limiting linkers include optionally substituted alkylene, optionally substituted heteroalkylene, optionally substituted (aryl)(alkyl)ene, optionally substituted arylene, optionally substituted cycloalkylene, oxy, or thio.
• the linker can be -Ak-, -Ak-X-, -X-Ak-, -(Ak-X)hi-Ak-, -X-(Ak-X)hi-, -Ak-Ar-, -Ak-Ar-Ak-, - Ar-Ak-, -(Ak-X)hi-Ar-, -(Ak-X)hi-Ar-(Ak-X)hi-,
• Ak is an optionally substituted alkylene
• Ar is an optionally substituted arylene
• X is or includes a non-carbon heteroatom (e.g., -0-, -S-, or -NR n1 - which R N1 is H, optionally alkyl, or optionally substituted aryl)
• the SRP can be an amorphous polymer that remains solvent soluble.
• the SRP can be synthesized using any corresponding monomer.
• the monomer can be or have a structure of any of formulas (I)-(XV), (la), or a salt thereof, in which n is 1.
• the monomer can have any useful end group disposed on either end of such a structure.
• the monomer can be volatile and possess a melting point at or below 20°C.
• the SRP is formed with no unwanted side products.
• residue-free vaporization of the polymer can be achieved because side products need not be removed.
• scission of one (or few) chemical bonds within the SRP propagates full, rapid depolymerization of the polymer. Since all the bonds are the same (no inadvertent impurities), little or no residue is expected.
• the SRP can be deposited in any useful manner.
• the SRP can be spin-coated or vapor deposited.
• Formulations including solvents and additives
• the SRP can be provided as a formulation having a solvent or a solvent combination.
• the formulation includes about 0.1 wt.% to about 50 wt.% of one or more SRPs (e.g., about 5 wt.% to 20 wt.%), with the balance being the solvent.
• SRPs include diglyme, tetrahydrofuran, N-methyl-pyrrolidone, dimethylformamide, propylene carbonate, cyclopentanone, anisole, dichlorobenzene, and propylene glycol methyl ether acetate.
• Formulations can include one or more further additives selected from a plasticizer, an organic acid having a pKa more than or equal to 1, a photocatalyst (e.g., a photoacid generator or a photobase generator), a thermal catalyst (e.g., a thermal acid generator or a thermal base generator), and/or a dye.
• the amount of additive can include about 0.001 wt.% to about 25 wt.% of a single additive, as well as a combination of additives in an amount of about 0.001 wt.% to about 25 wt.%.
• the SRP and the additive(s) may be formulated and stored as separate solutions but mixed together at point of deposition onto the wafer, or at some point relatively shortly beforehand.
• the SRP and additive(s) may be provided as a powder to be mixed in the solvent before spin coating.
• the SRP and additive (either singularly or together) may be provided with a relative wt.% of at least 5: 1 SRP:additive, or at least 10:1, or 20:1.
• Plasticizers can be employed to promote plasticity or flexibility in the film.
• Non- limiting plasticizers can include adipates, alkylene glycol dibenzoates, dialkyl phthalates, trialkyl trimellitates, tertiary amines, quaternary ammonium compounds, azelates, citrates, ether-esters, polyethers, glutarates, glycols, isobutyrates, maleates, phosphates, phosphonium compounds, organophosphates, sebacates, sulfonamides, sulfonium compounds, as well as ionic liquids, surfactants, and acid amplifiers, or a combination thereof.
• the low T c homopolymers can be formulated with weak acids that create stable films under ambient conditions, as well as exhibit accelerated degradation characteristics, as compared to the neat, unformulated homopolymer in a solvent.
• Specific examples of acids with this behavior include weak organic acids (e.g., having a pKa that is more than or equal to 1).
• Yet other acids include tartaric acid, oxalic acid, and acetic acid.
• oxoethanoic acid 2-hydroxyethanoic acid, prop-2-enoic acid, 2-propynoic acid, 2- hydroxypropanedioic acid, oxopropanedioic acid, 2,2-dihydroxypropanedioic acid, 2- oxopropanoic acid, 2-hydroxypropanoic acid, 3-hydroxypropanoic acid, 2,3- dihydroxypropanoic acid, etc.
• 2-propynoic acid 2- hydroxypropanedioic acid
• 2- oxopropanedioic acid 2,2-dihydroxypropanedioic acid
• 2- oxopropanoic acid 2-hydroxypropanoic acid
• 3-hydroxypropanoic acid 2,3- dihydroxypropanoic acid, etc.
• the low T c homopolymer may be pre-formulated with the appropriate acid prior to tool installation, and then spin-coated onto the substrates for sacrificial bracing or surface protection applications.
• the low Tc polymer may be mixed with the acid at point of use, right before spin-coating. This approach may be used to prolong the shelf-life of the homopolymer formulation, since although it is stable in film form (solid state), it may not be stable in solution once contacted with the acid.
• the formulation is provided as about 5-20 wt.% SRP and ⁇ 1 wt.% organic weak acid, with the balance being the solvent.
• the formulation, and thus the resultant film can include a photoacid generator (PAG), in which exposure of the SRP to electromagnetic radiation produces acid.
• PAG photoacid generator
• energetic light e.g., UV light, IR lights, or x-rays
• Non-limiting photoacid generators include onium salts, such as iodonium and sulfonium salts having perfluorinated anions (e.g., diaryliodonium and triarylsulfonium salts), bissulfonyldiazomethane compounds, N-sulfonyloxydicarboximide compounds, and O- arylsulfonyloxime compounds.
• the photoacid generator may optionally include a photosensitizer (e.g., having modified poly aromatic hydrocarbons or fused aromatic rings).
• a photosensitizer e.g., having modified poly aromatic hydrocarbons or fused aromatic rings.
• Other acid generators can be used, such as a thermal acid generator that releases acidic moieties upon exposure to heat. In this way, depolymerization of the SRP can include both thermal and acidic processes.
• Non-limiting thermal acid generators include ammonium salts, sulfonyl esters, and acid amplifiers.
• the SRPs, and methods herein can be used with HAR features and related processes. For instance, wet processes such as etch and clean, which may make up greater than 25% of the overall process flow, can particularly challenging on HAR features due to the capillary forces that are generated during drying. The strength of these capillary forces can depend on the surface tension and contact angle of the etch, clean, or rinse fluids that are being dried, as well as the feature spacing and aspect ratio. If the forces generated during drying are too high, then the HAR features will collapse onto each other and stiction may occur. Feature collapse and stiction will severely degrade the device yield. Thus, in one aspect, the SRPs herein can be employed to reduce collapse of such structures.
• a method for bracing HAR structures using an SRP includes providing HAR structures with a solvent.
• the substrate may be provided, for example, after a wet etch or cleaning operation and have solvent associated with the prior operation.
• the solvent i.e., to be disposed by the SRP, may be a transitional solvent if the prior solvent is not chemically compatible with the SRP solution.
• the SRP can be disposed on any useful substrate or surface.
• the surface may be a planar surface or include one or more pillars, holes, gaps, and trenches, including HAR structures.
• Yet other surfaces can include those on devices, such as electronic components, printed circuit boards, packages, and others.
• substrate surfaces include silicon, silicon germanium, and germanium structures such as fins and nanowires, metal surfaces including but not limited to copper, cobalt, titanium, titanium nitride, tungsten or molybdenum, and/or other structures and materials. Apparatus
• a substrate processing system 400 includes one or more substrate processing tools 402 (substrate processing tools 402a and 402b are shown for illustration purposes) and substrate buffer 430 or other substrate storage.
• Each of the substrate processing tools 402a and 402b includes a plurality of processing chambers 404a, 404b, 404c, etc. (collectively processing chambers 404).
• each of the processing chambers 404 may be configured to perform a substrate treatment.
• the substrates may be loaded into one of the processing chambers 404, processed, and then moved to one or more other ones of the processing chambers 404 and/or removed from the substrate processing tool 400 (e.g., if all perform the same treatment).
• Substrates to be processed are loaded into the substrate processing tools 402a and 402b via ports of a loading station of an atmosphere-to-vacuum (ATV) transfer module 408.
• the ATV transfer module 408 includes an equipment front end module (EFEM).
• EFEM equipment front end module
• the substrates are then transferred into one or more of the processing chambers 404.
• a transfer robot 412 is arranged to transfer substrates from loading stations 416 to load locks 420.
• a vacuum transfer robot 424 of a vacuum transfer module 428 is arranged to transfer substrates from the load locks 420 to the various processing chambers 404.
• the substrates may be transported outside of a vacuum environment.
• the substrates may be moved to a location for storage (such as the substrate buffer 430).
• the substrates may be moved directly from the substrate processing tool to another substrate processing tool for further processing or from the storage buffer 430 to another substrate processing tool for further processing.
• Exposure of the substrate to ambient conditions may cause defects or otherwise adversely impact downstream processing.
• a sacrificial protective layer including an SRP can be added to the substrate prior to exposure to ambient conditions.
• the sacrificial protective layer is applied in the substrate processing tool prior to transferring the substrate to the substrate buffer for storage or to another substrate processing tool.
• the sacrificial protective layer is applied in another processing chamber (not associated with the substrate processing tool).
• the sacrificial protective layer Prior to performing another treatment on the substrate, the sacrificial protective layer is removed as described herein.
• the substrate may be transferred to the substrate processing tool 402b after a period of storage in the storage buffer 430 or after processing in the substrate processing tool 402a.
• the sacrificial protective layer may be removed in one of the processing chambers in the substrate processing tool 402b, or another processing chamber (not associated with the substrate processing tool 402b). In some embodiments, the sacrificial protective layer is removed in a load lock 420.
• the sacrificial protective layer is applied by a processing chamber in the same substrate processing tool (that performed substrate treatment) prior to exposure to ambient conditions. Since the substrate processing tool operates at vacuum, exposure of the substrate to ambient conditions is prevented.
• the sacrificial layer is deposited after a wet clean process. In this case, oxides and residues may be removed by the wet clean process and the sacrificial layer is deposited in sequence prior to drying the wafer or immediately after drying the wafer. In some examples, this process is not done under vacuum and is done without any exposure of the dry pristine surface to the ambient.
• the substrate is transported from the substrate processing tool to another processing chamber located outside of the substrate processing tool that adds the sacrificial protective layer.
• Exposure limits or reduces the period of exposure of the substrate to ambient conditions. Exposure is limited to a brief period of transport from the substrate processing tool to the processing chamber where the sacrificial protective layer is applied. Storage of the substrate may be performed for longer periods without additional exposure to ambient conditions. Subsequently, the sacrificial protective layer may be removed prior to further processing. In some examples, the sacrificial protective layer is removed in another substrate processing tool under vacuum conditions prior to substrate treatment in processing chambers of the same substrate processing tool. In other examples, the substrate is transported to a processing chamber that removes the sacrificial protective layer and then to the substrate processing tool for further processing. This approach also limits exposure to ambient conditions between the processing chamber and the substrate processing tool or other environment.
• the sacrificial protective layer is formed immediately after etch, deposition, or other process by exposing the substrate to a small molecule vapor that condenses on the surface to form a film. This can be performed directly inside the tool in which the etch or deposition occurred (e.g., substrate processing tool 402a) and may occur in the same processing chamber in which the etch or deposition occurred. The substrate is then taken to the next tool for processing (e.g., substrate processing tool 402b). Once the substrate is again no longer exposed to ambient conditions (for example by bringing the substrate under vacuum or an atmosphere purged with an inert gas), vacuum and compounds, and in some cases, other stimuli, as described above are applied to induce the film to degrade and be removed from the substrate. This may take place inside of a processing chamber as described above (e.g., process chamber 404a of substrate processing chamber 402b).
• a processing chamber as described above (e.g., process chamber 404a of substrate processing chamber 402b).
• a system controller is employed to control process conditions during processing including during the SRP removal.
• the controller will typically include one or more memory devices and one or more processors.
• a processor may include a CPU or computer, analog and/or digital input/output connections, stepper motor controller boards, etc.
• the controller may control all the activities of a removal apparatus.
• the system controller executes system control software, including sets of instructions for controlling the timing, mixture of gases, chamber pressure, chamber temperature, wafer temperature, wafer chuck or pedestal position, plasma power, and other parameters of a particular process.
• Other computer programs stored on memory devices associated with the controller may be employed in some embodiments.
• the user interface may include a display screen, graphical software displays of the apparatus and/or process conditions, and user input devices such as pointing devices, keyboards, touch screens, microphones, etc.
• System control logic may be configured in any suitable way.
• the logic can be designed or configured in hardware and/or software.
• the instructions for controlling the drive circuitry may be hard coded or provided as software.
• the instructions may be provided by “programming.” Such programming is understood to include logic of any form, including hard coded logic in digital signal processors, application-specific integrated circuits, and other devices which have specific algorithms implemented as hardware. Programming is also understood to include software or firmware instructions that may be executed on a general purpose processor.
• System control software may be coded in any suitable computer readable programming language.
• the computer program code for controlling the reactant pulses and purge gas flows and other processes in a process sequence can be written in any conventional computer readable programming language: for example, assembly language, C, C++, Pascal, Fortran, or others. Compiled object code or script is executed by the processor to perform the tasks identified in the program. Also as indicated, the program code may be hard coded.
• the controller parameters relate to process conditions, such as, for example, process gas composition and flow rates, temperature, pressure, substrate temperature, and plasma power. These parameters are provided to the user in the form of a recipe and may be entered utilizing the user interface.
• Signals for monitoring the process may be provided by analog and/or digital input connections of the system controller.
• the signals for controlling the process are output on the analog and digital output connections of the system.
• the system software may be designed or configured in many ways.
• various chamber component subroutines or control objects may be written to control operation of the chamber components necessary to carry out the deposition processes in accordance with the disclosed embodiments.
• Examples of programs or sections of programs for this purpose include substrate positioning code, process gas control code, pressure control code, and heater control code.
• a controller is part of a system, which may be part of the above-described examples.
• Such systems can include semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.).
• These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate.
• the electronics may be referred to as the “controller,” which may control various components or subparts of the system or systems.
• the controller may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
• temperature settings e.g., heating and/or cooling
• pressure settings e.g., vacuum settings
• power settings e.g., pressure settings
• flow rate settings e.g., fluid delivery settings, positional and operation settings
• the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like.
• the integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).
• Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system.
• the operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
• the controller in some implementations, may be a part of or coupled to a computer that is integrated with, coupled to the system, otherwise networked to the system, or a combination thereof.
• the controller may be in the “cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing.
• the computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.
• a remote computer e.g.
• a server can provide process recipes to a system over a network, which may include a local network or the Internet.
• the remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer.
• the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations.
• the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.
• the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein.
• An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.
• example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an ALD chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
• PVD physical vapor deposition
• CVD chemical vapor deposition
• ALD atomic layer etch
• ALE atomic layer etch
• the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.
• the controller may include various programs.
• a substrate positioning program may include program code for controlling chamber components that are used to load the substrate onto a pedestal or chuck and to control the spacing between the substrate and other parts of the chamber such as a gas inlet and/or target.
• a process gas control program may include code for controlling gas composition, flow rates, pulse times, and optionally for flowing gas into the chamber.
• a pressure control program may include code for controlling the pressure in the chamber by regulating, e.g., a throttle valve in the exhaust system of the chamber.
• a heater control program may include code for controlling the current to a heating unit that is used to heat the substrate. Alternatively, the heater control program may control delivery of a heat transfer gas such as helium to the wafer chuck.
• a plasma power program may control plasma power.
• chamber sensors that may be monitored during removal include mass flow controllers, pressure sensors such as manometers, and thermocouples located in the pedestal or chuck. Appropriately programmed feedback and control algorithms may be used with data from these sensors to maintain desired process conditions.
• Lithographic patterning of a film typically comprises some or all of the following steps, each step provided with a number of possible tools: (1) application of photoresist on a workpiece, i.e., substrate, using a spin-on or spray-on tool; (2) curing of photoresist using a hot plate or furnace or UV curing tool; (3) exposing the photoresist to visible or UV or x-ray light with a tool such as a wafer stepper; (4) developing the resist so as to selectively remove resist and thereby pattern it using a tool such as a wet bench; (5) transferring the resist pattern into an underlying film or workpiece by using a dry or plasma- assisted etching tool; and (6) removing the resist using a tool such as an RF or microwave plasma resist stripper.
• a tool such as an RF or microwave plasma resist stripper.

Landscapes

• Chemical & Material Sciences (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Medicinal Chemistry (AREA)
• Organic Chemistry (AREA)
• Health & Medical Sciences (AREA)
• Polymers & Plastics (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Engineering & Computer Science (AREA)
• Architecture (AREA)
• Structural Engineering (AREA)
• Formation Of Insulating Films (AREA)
• Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
• Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
• Compositions Of Macromolecular Compounds (AREA)
• Mechanical Treatment Of Semiconductor (AREA)
• Dicing (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Priority Applications (4)

Applications Claiming Priority (2)

Publications (1)

Family

ID=80038094

Family Applications (1)

Country Status (6)

Cited By (4)

Families Citing this family (1)

Citations (3)

Family Cites Families (4)

• 2021
  • 2021-07-23 US US18/006,552 patent/US20230295412A1/en active Pending
  • 2021-07-23 WO PCT/US2021/042978 patent/WO2022026323A1/en not_active Ceased
  • 2021-07-23 JP JP2023505859A patent/JP2023536819A/ja active Pending
  • 2021-07-23 CN CN202180059233.7A patent/CN116194843A/zh active Pending
  • 2021-07-23 KR KR1020237007057A patent/KR102939373B1/ko active Active
  • 2021-07-23 TW TW110127126A patent/TWI900618B/zh active

Patent Citations (3)

Non-Patent Citations (2)

Also Published As

Similar Documents

Legal Events