WO2022014316A1

WO2022014316A1 - Plating electrode, plating device, and plating method

Info

Publication number: WO2022014316A1
Application number: PCT/JP2021/024554
Authority: WO
Inventors: 洋平竹本; 一誓大谷
Original assignee: 三菱電機株式会社
Priority date: 2020-07-14
Filing date: 2021-06-29
Publication date: 2022-01-20
Also published as: JP7345663B2; JPWO2022014316A1

Abstract

A plating electrode (100) comprises a nozzle (1) and a retaining part (2). The nozzle (1) includes a tip section (1e). The nozzle (1) is for supplying a plating solution (PS) through the tip section (1e). The retaining part (2) covers the tip section (1e) of the nozzle (1). The retaining part (2) is for retaining the plating solution (PS). The nozzle (1) configured so that a voltage is applied thereto.

Description

Plating electrode, plating equipment and plating method

This disclosure relates to a plating electrode, a plating apparatus, and a plating method.

Electroplating is used as one of the methods for forming a plating film on a metal material. In electroplating, masking work is performed as preparatory work before plating. In the masking work, the portion other than the portion to be plated is protected by a masking material such as an insulating tape and a resist. This suppresses the formation of a plating film other than the portion to be plated. However, since the lead time is increased by the masking work, there is a problem that the rectification of production is hindered.

As a plating method that solves the above problems, for example, there is a plating method called a sliding plating method. For example, International Publication No. 2019/10739 (Patent Document 1) describes a plating apparatus for forming a plating film on the surface to be plated by a sliding plating method. The plating apparatus includes a plating solution holding portion (holding portion) and a rotating electrode. The plating solution holding portion is arranged on the rotating electrode. The plating solution holding portion holds the plating solution. The object to be plated is arranged on the plating solution holding portion.

International Publication No. 2019/10739

In the plating apparatus described in the above publication, the entire surface to be plated of the object to be plated is arranged on the plating solution holding portion. Therefore, a plating film is formed over the entire surface to be plated. Therefore, it is not possible to selectively form a plating film on the portion to be plated which is a part of the surface to be plated.

The present disclosure has been made in view of the above problems, and an object thereof is to provide a plating electrode, a plating apparatus, and a plating method capable of selectively forming a plating film.

The plated electrode of the present disclosure includes a nozzle and a holding portion. The nozzle includes the tip. The nozzle is a nozzle for supplying the plating solution through the tip portion. The holding part is a holding part for holding the plating solution. The holding portion covers the tip portion of the nozzle. The nozzle is configured to apply a voltage.

According to the plated electrodes of the present disclosure, the nozzle is configured to apply a voltage. Therefore, a voltage can be applied to the plating solution supplied by the nozzle by the nozzle. Therefore, a plating film can be formed on the portion to which the plating solution is supplied by the nozzle. Therefore, the plating film can be selectively formed.

It is sectional drawing which shows schematic the structure of the plating electrode and the power source which concerns on Embodiment 1. FIG. It is a bottom view which shows schematic structure of the nozzle which concerns on Embodiment 1. FIG. It is a bottom view which shows the other structure of the nozzle which concerns on Embodiment 1. It is a perspective view which shows schematic structure of the plating apparatus which concerns on Embodiment 1. FIG. It is a perspective view which shows schematic structure of the plating apparatus which concerns on 1st comparative example. It is a perspective view which shows schematic structure of the plating apparatus which concerns on 2nd comparative example. FIG. 5 is a side view schematically showing a configuration of a plating apparatus in a state where the plating electrode according to the first embodiment is in contact with a portion to be plated. FIG. 5 is a side view schematically showing a configuration of a plating apparatus in a state where the plating electrode according to the first embodiment is separated from a portion to be plated. It is a perspective view which shows the other structure of the plating apparatus which concerns on Embodiment 1. It is a flowchart which shows the plating method which concerns on Embodiment 1. It is a perspective view schematically showing the appearance that the plating electrode which concerns on Embodiment 1 is arranged away from the part to be plated. It is a perspective view which shows the state which the plating electrode which concerns on Embodiment 1 slides in the part to be plated. FIG. 5 is a perspective view schematically showing another state in which the plated electrode according to the first embodiment is sliding in the portion to be plated. It is a perspective view schematically showing the structure of the plating apparatus which concerns on Embodiment 2. FIG. It is a perspective view which shows typically the appearance that the plating electrode which concerns on 3rd comparative example was arranged away from the plated part before forming the plating film in the plated part. It is a perspective view which shows roughly the appearance that the plating electrode which concerns on 3rd comparative example is rotating in the part to be plated. It is a perspective view which shows roughly the appearance that the plating electrode which concerns on 3rd comparative example has finished forming the plating film in the part to be plated, and is arranged away from the part to be plated. It is a bottom view which shows schematic structure of the nozzle which concerns on Embodiment 2. FIG. It is a bottom view which shows the other structure of the nozzle which concerns on Embodiment 2. FIG. 5 is a perspective view schematically showing a state in which the plating electrodes according to the second embodiment are arranged away from the plated portion before forming a plating film on the plated portion. It is a perspective view which shows typically the appearance that the plating electrode which concerns on Embodiment 2 has finished forming the plating film in the part to be plated, and is arranged away from the part to be plated. It is a perspective view which shows schematic structure of the plating apparatus which concerns on Embodiment 3. FIG. It is a perspective view which shows the structure of the plating apparatus which concerns on the modification of Embodiment 3. FIG. FIG. 3 is a perspective view schematically showing a first state in which the plating electrode according to the third embodiment slides while rotating in a portion to be plated. FIG. 3 is a perspective view schematically showing a second state in which the plating electrode according to the third embodiment slides while rotating in the portion to be plated. FIG. 3 is a perspective view schematically showing a third state in which the plating electrode according to the third embodiment slides while rotating in the portion to be plated. It is a perspective view which shows typically the appearance that the plating electrode which concerns on the modification of Embodiment 3 is arranged away from the plated part before forming the plating film in the plated part. It is a perspective view which shows typically the appearance that the plating electrode which concerns on the modification of Embodiment 3 slides while rotating in the part to be plated. It is a perspective view which shows typically the appearance that the plating electrode which concerns on the modification of Embodiment 3 has finished forming the plating film in the part to be plated, and is arranged away from the part to be plated. It is a perspective view which shows schematic structure of the nozzle which concerns on Embodiment 4. FIG. It is a perspective view which shows schematic structure of the nozzle which concerns on 1st modification of Embodiment 4. It is a perspective view which shows schematic structure of the nozzle which concerns on the 2nd modification of Embodiment 4. It is sectional drawing which shows schematic the structure of the plating apparatus which concerns on Embodiment 4. FIG. FIG. 3 is a cross-sectional view taken along the line XXXIV-XXXIV of FIG. 33. It is sectional drawing which shows schematic the structure of the plating apparatus which concerns on the 3rd modification of Embodiment 4. It is sectional drawing along the XXXVI-XXXVI line of FIG. 35. It is sectional drawing which shows schematic the structure of the plating apparatus which concerns on 4th modification of Embodiment 4. It is a functional block diagram schematically showing the structure of the plating apparatus which concerns on the 4th modification of Embodiment 4. It is sectional drawing which shows schematic the structure of the plating apparatus which concerns on 5th modification of Embodiment 4. FIG. 3 is a functional block diagram schematically showing a configuration of a plating apparatus according to a fifth modification of the fourth embodiment. It is a perspective view schematically showing the structure of the plating apparatus which concerns on the 6th modification of Embodiment 4. It is a functional block diagram which shows schematic structure of the plating apparatus which concerns on the 6th modification of Embodiment 4. It is a perspective view schematically showing the structure of the plating apparatus which concerns on the 7th modification of Embodiment 4. FIG. 3 is a functional block diagram schematically showing a configuration of a plating apparatus according to a seventh modification of the fourth embodiment. It is a flow chart which shows schematic the control method of the plating apparatus which concerns on 4th modification of Embodiment 4. FIG. 5 is a flow chart schematically showing a control method of a plating apparatus according to a fifth modification of the fourth embodiment. It is a flow chart schematically showing the control method of the flow rate of the plating solution which concerns on the 6th modification of Embodiment 4. It is sectional drawing which shows schematic the structure of the plating apparatus which concerns on Embodiment 5. It is a perspective view which shows schematic structure of the plating apparatus which concerns on Embodiment 5.

Hereinafter, embodiments will be described with reference to the figures. In the following, the same or corresponding parts will be designated by the same reference numerals, and duplicate explanations will not be repeated.

Embodiment 1.
The configuration of the plating electrode 100 according to the first embodiment will be described with reference to FIGS. 1 to 8.

As shown in FIG. 1, the plating electrode 100 is a plating electrode for forming a plating film PF on a part of the surface PP of the object to be plated PM by the plating solution PS. The surface to be plated PP is one of the surfaces constituting the object to be plated PM. The plating electrode 100 is a plating electrode for forming a plating film PF on the PR to be plated. The part to be plated PR is a part of the surface to be plated PP.

The plating electrode 100 includes a nozzle 1 and a holding portion 2. The nozzle 1 includes a tip portion 1e. The nozzle 1 is a nozzle for supplying the plating solution PS through the tip portion 1e. The nozzle 1 is configured to apply a voltage. The plating electrode 100 and the PR to be plated are electrically connected to the power supply 3. Therefore, the plating electrode 100 according to the present embodiment has a function as a nozzle for supplying the plating solution PS and a function as an electrode to which a voltage is applied.

The material of the nozzle 1 is a material that does not melt in the plating solution PS or a material that does not easily melt in the plating solution PS. The material of the nozzle 1 is a conductor. The nozzle 1 is made of any material selected from the group consisting of platinum (Pt), titanium-platinum (Ti-Pt), titanium-iridium oxide (Ti-IrO ₂ ), stainless steel (SUS) and carbon (C). Includes. When the material of the nozzle 1 is titanium (Ti) -platinum (Pt), it is preferable that a clad electrode in which a platinum (Pt) foil is clad on a titanium (Ti) substrate is used as the nozzle 1. When the material of the nozzle 1 is titanium (Ti) -platinum (Pt), an electrode to be plated in which a platinum (Pt) plating film PF is formed on a titanium (Ti) substrate may be used as the nozzle 1. ..

The nozzle 1 may be configured to supply a degreasing agent, an acid detergent, a neutralizing agent, and pure water, which will be described later, to the PR to be plated.

The holding portion 2 is a holding portion for holding the plating solution PS. Therefore, the holding portion 2 is configured to hold the plating solution PS. The holding portion 2 is configured so that the plating solution PS is impregnated into the holding portion 2. By impregnating the holding portion 2 with the plating solution PS, the plating solution PS is held in the holding portion 2. In a state where the holding portion 2 is impregnated with the plating solution PS, the surface of the holding portion 2 is wet with the plating solution PS. In a state where the holding portion 2 is impregnated with the plating solution PS, the holding portion 2 is in contact with the portion to be plated PR. The nozzle 1 is connected to the plated portion PR via the holding portion 2 impregnated with the plating solution PS. The material of the holding portion 2 is, for example, a woven fabric or a non-woven fabric. As long as the holding portion 2 can hold the plating solution PS, the material of the holding portion 2 may be appropriately determined. The holding portion 2 is an insulator.

The holding portion 2 covers the tip portion 1e of the nozzle 1. The holding portion 2 may cover the side surface 1s of the nozzle 1. The holding portion 2 has a flat surface. The holding portion 2 is in contact with the plated portion PR on a flat surface. As long as the holding portion 2 covers the tip portion 1e, the shape of the holding portion 2 may be appropriately determined.

The tip portion 1e is provided with a plurality of openings OP. The holding portion 2 covers each of the plurality of openings OP. The nozzle 1 is configured to supply the plating solution PS through a plurality of openings OP.

As shown in FIG. 2, the shape of each of the plurality of openings OP is, for example, circular. The dimensions of each of the plurality of openings OP may be the same as each other. The distance between the plurality of adjacent openings OPs may be the same as each other. Therefore, the plurality of openings OP may be uniformly arranged. Each of the plurality of openings OP may be provided point-symmetrically with respect to the center of the tip portion 1e.

Further, as shown in FIG. 3, the shape of each of the plurality of openings OP may be a polygon such as a square shape. Therefore, each of the plurality of openings OP may be configured as a slit. In this embodiment, the slit is a penetrating portion having an elongated rectangular shape. If the plating solution PS is uniformly supplied, the shape and arrangement of the opening OP may be appropriately determined.

The plurality of openings OP may include a plurality of first openings OP1, a plurality of second openings OP2, and a plurality of third openings OP3. The plurality of first openings OP1 are arranged so as to form the outer shape of the first square Q1. The plurality of second openings OP2 are arranged so as to form the outer shape of the second square Q2. The plurality of third openings OP3 are arranged so as to form the outer shape of the third square Q3. The second square Q2 is arranged so as to surround the first square Q1. The third square Q3 is arranged so as to surround the second square Q2.

As shown in FIGS. 1 to 3, the aperture ratio of the tip portion 1e is, for example, 5% or more and 25% or less. In the present embodiment, the aperture ratio is the ratio of the area of the opening OP to the area of the entire tip portion 1e. As a result, the amount of the plating solution PS supplied from the nozzle 1 to the plated portion PR is made uniform. In addition, the uniformity of the distribution of the plating solution PS in the holding portion 2 is increased. Therefore, the plating solution PS is uniformly supplied to the PR to be plated. Therefore, the film formation rate of the plating film PF is stable. In this embodiment, the film formation rate is the efficiency at which the plating film PF is formed. Further, since the current density distribution in the plated portion PR is made uniform, the uniformity of the thickness (film thickness) of the deposited plating film PF is increased.

If the aperture ratio of the tip portion 1e is less than 5%, the discharge amount of the plating solution PS supplied from the nozzle 1 is small. Therefore, the amount of liquid supplied to the holding portion 2 is small. As a result, the distribution of the plating solution PS impregnated in the holding portion 2 becomes non-uniform. Therefore, the film formation rate is low. In addition, the film formation rate varies. Therefore, when the aperture ratio of the tip portion 1e is less than 5%, the production efficiency of the plating film PF decreases.

If the aperture ratio of the tip portion 1e is larger than 25%, the amount of the plating solution PS supplied from the nozzle 1 is large. Therefore, the amount of liquid supplied from the nozzle 1 to the holding portion 2 is larger than the amount of liquid that can be held by the holding portion 2. As a result, the plating solution PS is saturated in the holding portion 2. The saturated plating solution PS leaks from the inside of the holding portion 2 to the outside of the holding portion 2. Therefore, the distribution of the plating solution PS becomes non-uniform. Therefore, the film formation rate varies.

Further, if the aperture ratio of the tip portion 1e is larger than 25%, the saturated plating solution PS leaks from the inside of the holding portion 2 to the outside of the holding portion 2. Therefore, the plating film PF is also formed outside the PR to be plated. Therefore, the plating film PF may be formed in a region where it is not desirable to form the plating film PF.

Further, the plating film PF is less likely to be formed under the opening OP than directly under the unopened region of the tip portion 1e. Therefore, the film formation rate is lower directly under the opening OP than directly under the unopened region of the tip portion 1e. Therefore, the film formation rate is low depending on the position where the plating film PF is formed. If the aperture ratio of the tip portion 1e is larger than 25%, the ratio of the area of the opening OP to the total area of the tip portion 1e is larger than 25%, so that the ratio of the portion having a low film formation rate is also higher than 25%. big. Since the proportion of the portion having a low film formation rate is large, the thickness of the plating film PF varies. Therefore, it is difficult for the plating film PF to be uniformly deposited.

The aperture ratio is set by the number of holes and the area of each of the plurality of openings OP. In the present embodiment, the number of holes is the number of openings OP. As shown in FIGS. 2 and 3, the number of holes is preferably 5 or more. The maximum number of holes is determined according to the shape and dimensions of the tip portion 1e of the nozzle 1. For example, when the shape of the tip portion 1e of the nozzle 1 is a square of 100 mm × 100 mm, the maximum number of holes is 1000 holes.

If the number of holes is less than 5, the amount of plating liquid PS discharged per hole is large. Further, the distribution of the plating solution PS supplied to the holding portion 2 becomes non-uniform. As a result, the amount of the plating solution PS supplied to the holding portion 2 varies. Therefore, the distribution of the plating solution PS in the holding portion 2 becomes non-uniform. Therefore, the film formation rate varies. Therefore, when the number of holes is less than 5, the production efficiency of the plating film PF is lowered.

If the number of holes is more than 1000 holes, the processing cost of nozzle 1 is high. Even when the number of holes is 1000 or more, deterioration of the plating quality is suppressed.

As shown in FIG. 4, the ratio of the surface area of the tip portion 1e to the surface area of the plated portion PR is preferably 20% or more and 75% or less. When the ratio of the surface area of the tip portion 1e to the surface area of the portion PR to be plated is 20% or more and 75% or less, the plating film PF is likely to be uniformly deposited. Further, when the ratio of the surface area of the tip portion 1e to the surface area of the plated portion PR is 20% or more and 75% or less, the precipitation rate of the plating film PF is stable. In the perspective view of FIG. 4, etc., the thickness of the plating film PF is not shown.

As shown in FIG. 5, if the ratio of the surface area of the tip portion 1e (see FIG. 4) to the surface area of the plated portion PR is less than 20%, the moving distance of the plating electrode 100 on the plated surface PP is large. .. Further, the ratio of the plated portion PR to which the nozzle 1 is not in contact with the entire plated portion PR is larger than 80%. Therefore, the film formation rate is low. Therefore, the production efficiency and the plating quality of the plating film PF are lowered.

As shown in FIG. 6, if the ratio of the tip portion 1e (see FIG. 4) to the surface area of the plated portion PR is larger than 75%, the moving distance of the plating electrode 100 on the plated surface PP is small. Therefore, the moving speed of the plating electrode 100 becomes unstable. Therefore, the plating film PF does not precipitate uniformly. In addition, the precipitation rate becomes unstable. Therefore, the production efficiency and plating quality of the plating film PF are lowered.

Next, the configuration of the plating apparatus 200 according to the first embodiment will be described with reference to FIGS. 7 to 9.
As shown in FIG. 7, the plating apparatus 200 is a plating apparatus for forming a plating film PF on the PR to be plated. The plating apparatus 200 includes a plating electrode 100, a power supply 3, and a connection mechanism 4.

The power supply 3 is electrically connected to each of the plating electrode 100 and the plated portion PR. The power supply 3 is configured to apply a voltage to the plating electrode 100 and the plated portion PR. In the present embodiment, the plating electrode 100 is configured as an anode. The object to be plated PM is configured as a cathode.

The connection mechanism 4 is connected to the plating electrode 100. The connection mechanism 4 is an arm of a robot or the like. The connection mechanism 4 is configured to connect the plating electrode 100 to the plated portion PR. As shown in FIG. 8, the connection mechanism 4 is configured to be able to hold the plating electrode 100 in a state where the plating electrode 100 is separated from the plated portion PR. As shown in FIGS. 7 and 8, the connection mechanism 4 moves the plating electrode 100 held away from the plated portion PR onto the plated portion PR, thereby moving the plated electrode 100 onto the plated portion PR. It is configured to connect to.

As shown in FIG. 7, the connection mechanism 4 is configured so that the contact pressure between the plating electrode 100 and the PR to be plated can be adjusted when the connection mechanism 4 and the plating electrode 100 come into contact with each other. As a result, the contact pressure is adjusted so that the thickness of the plating film PF becomes a sound thickness.

Contact pressure between the holder 2 and the object to be plated portion PR ^is preferably not more than 0.25kgf / cm 2 (24.52kPa) over 2.0kgf ^/ cm 2 (196.13kPa). If the contact pressure is ^{less than 0.25 kgf / cm 2} (24.52 kPa), the plating film PF is likely to be burnt. When the plating film PF is burnt, a sound plating film PF cannot be obtained. When the plating film PF is silver-plated, burning is particularly likely to occur. Further, if the contact pressure is ^{larger than 2.0 kgf / cm 2} (196.13 kPa), the deposited plating film PF is worn by contact with the plating electrode 100. As a result, the growth of the plating film PF is hindered, so that a plating film PF having a sufficient thickness cannot be obtained.

In the present embodiment, the connection mechanism 4 is configured such that the plating electrode 100 is slidable on the PR to be plated. In the present embodiment, sliding on the plated portion PR means moving linearly or curvedly on the plated portion PR. Therefore, sliding means moving in a straight line or a curved line in a state of being in contact with the PR to be plated. The connection mechanism 4 is configured so that the plating electrode 100 can be reciprocated on the PR to be plated.

The connection mechanism 4 is configured such that the plating electrode 100 is slidable along either the first direction DR1 or the second direction DR2 on the PR to be plated. The first direction DR1 is a direction along the in-plane direction of the surface to be plated PP. The second direction DR2 is a direction along the in-plane direction of the surface to be plated PP and orthogonal to the first direction DR1. The connection mechanism 4 may be configured such that the plating electrode 100 is slidable along the first direction DR1 and the second direction DR2 on the PR to be plated.

As shown in FIG. 9, the plating apparatus 200 includes a plating tank 51, a reserve tank 52, a first pipe 61, a second pipe 62, a third pipe 63, a fourth pipe 64, a first valve 65, and a second valve 66. , Third valve 67, pump 7, heater 8 and agitator 9 may be further included.

The plating electrode 100 and the object to be plated PM are arranged in the plating tank 51. The plating solution PS is filled in the reserve tank 52. The nozzle 1 of the plating electrode 100 is connected to the first pipe 61. The plating solution PS is supplied from the reserve tank 52 to the plating electrode 100 by the pump 7 through the third pipe 63, the third valve 67, the first valve 65, and the first pipe 61 in order. The plating solution PS may be supplied from the reserve tank 52 to the plating electrode 100 by the pump 7 through the fourth pipe 64, the second valve 66, the first valve 65 and the first pipe 61 in order. The plating solution PS supplied to the plating electrode 100 is supplied to the object to be plated PM. The plating solution PS supplied to the plating electrode 100 may fall into the plating tank 51. The plating solution PS that has fallen into the plating tank 51 returns to the reserve tank 52 through the second pipe 62.

The pump 7 is configured to supply the plating solution PS in the reserve tank 52 to the nozzle 1. The fourth pipe 64 is connected to the first pipe 61 via the second valve 66. The heater 8 is configured to heat the plating solution PS in the reserve tank 52. The agitator 9 is configured to agitate the plating solution PS in the reserve tank 52.

The plating solution PS is, for example, a silver plating solution. The silver plating solution is a plating solution used for silver plating. The silver plating solution includes, for example, 1 wt% (% by weight) or more and 5 wt% (% by weight) or less of silver (Ag) ions, 30 wt% (% by weight) or more and 40 wt% (% by weight) or less of potassium iodide (KI), and the like. It is a plating solution PS containing 1 wt% (% by weight) or more and 5 wt% (% by weight) or less of methanesulfonic acid (CH ₄ O ₃ S) as a metal salt and adjusted so that the pH becomes 7. The silver plating solution is, for example, silver (Ag) ion of 3 wt% (% by weight) or more and 15 wt% (% by weight) or less, and free cyanide (CN) of 5 wt% (% by weight) or more and 15 wt% (% by weight) or less. The plating solution PS is prepared by containing _{potassium carbonate (K 2} CO ₃ ) of 2 wt% (% by weight) or more and 7 wt% (% by weight) or less as a metal salt. In this embodiment, wt% (% by weight) is the ratio of the weight of the solute to the total prepared solution.

The temperature of the plating solution PS may be appropriately determined so that a plating film PF having an appropriate film thickness can be obtained. The temperature of the plating solution PS is, for example, 25 ° C. When the plating solution PS is a silver plating solution, the temperature of the plating solution PS is preferably 25 ° C. The temperature of the plating solution PS may be appropriately determined according to the state of the object to be plated PM.

Next, the plating method according to the first embodiment will be described with reference to FIGS. 4 and 10 to 13.

As shown in FIG. 4, the plating method is a plating method for forming a plating film PF on a portion PR to be plated with a plating solution PS. A case where a silver-plated plating film PF is formed on the object to be plated PM, which is a copper (Cu) alloy material, by the plating apparatus 200 according to the present embodiment will be described. The material to be plated PM according to this embodiment is not limited to the copper (Cu) alloy material. Further, the plating film PF formed is not limited to the silver-plated plating film PF. For example, a nickel (Ni) plating film PF may be formed on the object to be plated PM, which is an aluminum alloy material, by the plating apparatus 200. Further, the plating film PF may be formed on the object to be plated PM by multi-layer plating. In the multi-layer plating, a tin (Sn) -plated plating film PF is further formed on the nickel (Ni) plating film PF.

As shown in FIG. 10, the plating method includes a step S1 to be held and a step S2 to be formed.

First, the object to be plated PM is prepared. Specifically, as shown in FIG. 11, a copper alloy material pre-processed into a set shape is prepared as the object to be plated PM. The surface PP of the object to be plated PM is degreased with a degreasing agent. As a result, surface contaminants such as organic foreign substances are removed from the surface PP to be plated. Therefore, the surface to be plated PP obtains liquid wettability. The degreasing treatment agent is, for example, an alkaline degreasing agent such as sodium hydroxide (NaOH) -based and sodium carbonate (Na ₂ CO _{3) -based.} The degreasing agent may be supplied to the object to be plated PM through the nozzle 1.

Subsequently, the PM to be plated is subjected to an acid cleaning treatment with an acid cleaning agent. As a result, surface contaminants such as inorganic foreign substances and the oxide film are removed from the surface PP to be plated. Therefore, the active metal surface is exposed from the surface to be plated PP. Therefore, the surface to be plated PP obtains liquid wettability. In addition, the adhesion between the plated portion PR of the surface to be plated PP and the plating film PF is improved. The pickling agent is, for example, an etching solution containing _{nitric acid (HNO 3} ) and diluted sulfuric acid (H ₂ SO _4). The acid cleaning agent may be supplied to the object to be plated PM through the nozzle 1.

Subsequently, the object to be plated PM is neutralized with a neutralizing agent. As a result, traces of acid remaining on the surface to be plated PP are removed. Therefore, corrosion of the surface to be plated PP is suppressed. The neutralizing agent is, for example, a cyanide-based sodium cyanide (NaCN), a diluted sodium hydroxide (NaOH) -based cleaning solution, or the like. The neutralizing agent may be supplied to the object to be plated PM through the nozzle 1.

Subsequently, the object to be plated PM is fixed so as not to move when the plating film PF is formed on the portion PR to be plated on the surface to be plated PP. From the above, the object to be plated PM is prepared.

Subsequently, as shown in FIG. 4, the plating electrode 100 is held by the connection mechanism 4. The plating electrode 100 is held by the connection mechanism 4 in a state of being separated from the plated portion PR.

Subsequently, as shown in FIG. 11, the nozzle 1 supplies the plating solution PS from the tip portion 1e to the holding portion 2, so that the plating solution PS is held by the holding portion 2. Further, the amount of the plating solution PS supplied to the holding portion 2 is adjusted. Specifically, the supply amount of the plating solution PS is adjusted by adjusting the pump 7 (see FIG. 9), the valve for supplying the plating solution PS, and the valve for adjusting the liquid amount. The plating solution PS is supplied to the holding portion 2 through the opening OP (see FIG. 1) of the nozzle 1. As a result, the plating solution PS is held in the holding portion 2.

The supply amount of the plating solution PS may be appropriately determined according to the in-plane dimension of the tip portion 1e. For example, when the in-plane dimension of the tip 1e is 10 mm × 10 mm and the in-plane area of the tip 1e is 100 mm ² (1 cm ² ), the supply amount of the plating solution PS is 5 cm ³ / min (5 cm 3 / min). Minutes) or more, preferably 20 cm ³ / min (minutes) or less. If the supply amount of ^{the plating solution PS is less than 5 cm 3} / min (minutes), the supply amount of the plating solution PS is insufficient. Therefore, the film formation rate is lowered or the plating is burnt. As a result, a plating film having an appropriate film thickness cannot be obtained. If the supply amount of ^{the plating solution PS is larger than 20 cm 3} / min (minutes), the plating solution PS is excessively supplied on the surface PP to be plated. As a result, the plating solution PS adheres to the region outside the plated portion PR of the plated surface PP. Therefore, the plating film is not formed in an appropriate region.

Subsequently, as shown in FIG. 12, a plating film PF is formed on the PR to be plated. In FIGS. 11 to 13, for convenience of explanation, the PR of the plated portion in the state where the plating film PF is not formed is shown by the alternate long and short dash line. Further, the PR of the plated portion in the state where the plating film PF is formed is shown by a solid line.

As shown in FIGS. 11 and 12, a plating film PF is formed by connecting the plating electrode 100 to the plated portion PR in a state where a voltage is applied to the nozzle 1 and the plated portion PR. Specifically, the PR to be plated is electro-silver plated with the plating solution PS (silver plating solution). The plating film PF is formed on the portion PR to be plated so that the thickness of the plating film PF becomes uniform. In the electric silver plating treatment, the cathode electrolysis treatment generally performed in the plating treatment is performed.

The conditions of the plating process are the plating time, the current density, and the temperature (liquid temperature) of the plating solution PS. The plating time is the length of time that the holding portion 2 holding the plating solution PS comes into contact with the plated portion PR. For example, when the plating time is 30 seconds, the current density is 0.2 A / cm ² (20 A / dm ² ), and the liquid temperature is 25 ° C., the thickness of the plated film PF formed is 5 μm. .. When the silver plating treatment is performed, the liquid temperature is preferably about 25 ° C., but the liquid temperature may be appropriately determined according to the state of the PR to be plated. The plating time, current density and temperature of the plating solution PS may be appropriately determined.

A voltage is applied to the nozzle 1 and the PR of the plated portion. Specifically, the power supply 3 changes from an off state to an on state. In the off state, no voltage is applied to the nozzle 1 and the plated portion PR by the power supply 3. In the on state, a voltage is applied to the nozzle 1 and the plated portion PR by the power supply 3. Further, the connection mechanism 4 (see FIG. 7) moves the holding portion 2 so that the holding portion 2 comes into contact with the plated portion PR. At the moment when the holding portion 2 comes into contact with the plated portion PR, the nozzle 1 and the plated portion PR are energized.

Subsequently, as shown in FIGS. 12 and 13, the nozzle 1 moves on the plated portion PR while the voltage is applied to the nozzle 1 and the plated portion PR, thereby plating on the plated portion PR. Liquid PS is supplied. In the present embodiment, the nozzle 1 reciprocates linearly along the first direction DR1 by the connection mechanism 4 (see FIG. 7). If the surface area of the PR to be plated is large, the nozzle 1 may move along the first direction DR1 and the second direction DR2 (see FIG. 7). As will be described later, the nozzle 1 may rotate about the axis of the nozzle 1.

As a result, the plating solution PS is supplied to the plated portion PR of the plated surface PP.
In the present embodiment, the plating solution PS is supplied onto the plated portion PR by sliding the nozzle 1 on the plated portion PR in a state where a voltage is applied to the nozzle 1 and the plated portion PR. The plating method according to this embodiment is so-called sliding plating.

It is preferable that the plating electrode 100 moves at a constant speed. The relative speed between the moving plating electrode 100 and the fixed PR to be plated is preferably 12.5 m / min (minutes) or more and 17.5 m / min (minutes). If the relative speed is less than 12.5 m / min (minutes), the plating film PF is likely to be burnt. Therefore, a sound plating film PF cannot be obtained. When the plating film PF is silver-plated, the plating film PF is particularly prone to burning. Further, if the relative speed is larger than 17.5 m / min (minutes), the deposited plating film PF is worn by the holding portion 2. As a result, the growth of the plating film PF is hindered, so that a plating film PF having a sufficient thickness cannot be obtained.

Subsequently, post-processing is performed as necessary. In the post-treatment, for example, the object to be plated PM is washed with water.

From the above, the plating film PF is formed on the PR to be plated.
Subsequently, the action and effect of the present embodiment will be described.

According to the plating electrode 100 according to the first embodiment, as shown in FIG. 1, the nozzle 1 is a nozzle 1 for supplying the plating solution PS through the tip portion 1e. Further, the nozzle 1 is configured so that a voltage is applied. Therefore, a voltage can be applied to the plating solution PS supplied by the nozzle 1 via the nozzle 1. Therefore, the plating film PF can be selectively formed on the portion to which the plating solution PS is supplied by the nozzle 1. Therefore, the plating film PF can be selectively formed on a part of the surface to be plated PP (part to be plated PR).

This eliminates the need to cover the area where the plating film PF is not formed with a masking member. Therefore, the production cost of the plating film PF can be reduced.

Further, if the plating solution PS is supplied to the surface PP to be plated by the entire surface of the surface PP to be plated in contact with the holding portion 2, the plating film PF is formed on the surface PP to be plated larger than the size of the holding portion 2. Can not do it. That is, when the plating solution PS is supplied to the surface PP to be plated by contacting the entire surface of the surface PP to be plated with the holding portion 2, the dimensions of the product on which the plating film PF is formed are the dimensions of the holding portion 2. Limited to. Therefore, it is not possible to form a plating film PF on the surface PP of a medium-sized product or a large-sized product. According to the plating electrode 100 according to the present embodiment, the plating film PF is formed on the portion of the surface PP to be plated that is in contact with the plating electrode 100. Therefore, it is not necessary for the entire surface of the surface to be plated PP to come into contact with the holding portion 2. Therefore, the dimensions of the product on which the plating film PF is formed are not limited to the dimensions of the holding portion 2. Therefore, the plating film PF can be formed on the portion PR to be plated even when the size of the portion PR to be plated is large.

As shown in FIG. 1, the holding portion 2 covers the tip portion 1e of the nozzle 1. Therefore, the nozzle 1 can be connected to the plated portion PR via the holding portion 2. The holding portion 2 is an insulator, and the nozzle 1 is a conductor. If the holding portion 2 does not cover the tip portion 1e of the nozzle 1, the plating electrode 100 and the plated portion PR are short-circuited due to the contact of the plating electrode 100 with the plated portion PR, so that the plating film PF is not formed. .. According to the present embodiment, since the holding portion 2 covers the tip portion 1e of the nozzle 1, even if the plating electrode 100 comes into contact with the plated portion PR, the plated electrode 100 and the plated portion PR are not short-circuited. .. Therefore, the plating film PF can be formed in a state where the plating electrode 100 is in contact with the PR to be plated. Therefore, the plating film PF can be formed by sliding the plating electrode 100 on the PR to be plated. That is, the plating electrode 100 can be used for sliding plating.

As a result, the plating solution PS can be uniformly supplied to the plated portion PR as compared with the case where the plating solution PS is supplied in a state where the plating electrode 100 is separated from the plated portion PR. Therefore, it is possible to suppress the variation in the thickness of the plating film PF on the PR to be plated. Therefore, the quality of the plating film PF can be improved.

As shown in FIG. 1, the tip portion 1e is provided with a plurality of openings OP. The nozzle 1 is configured to supply the plating solution PS through a plurality of openings OP. Therefore, the flow rate of the plating solution PS can be controlled as compared with the case where a single opening OP is provided. As a result, the plating solution PS can be uniformly supplied. Therefore, it is possible to form a plating film PF having a uniform film thickness.

The nozzle 1 contains any material selected from the group consisting of platinum (Pt), titanium-platinum (Ti-Pt), titanium-iridium oxide (Ti-IrO2), stainless steel (SUS) and carbon (C). I'm out. Therefore, a voltage can be applied to the nozzle 1.

As shown in FIG. 3, the plurality of openings OP are configured as slits. Therefore, the area of the opening OP per the length of the side of the opening OP can be made smaller than that in the case where the plurality of opening OPs are circular (see FIG. 2). As a result, as shown in FIG. 1, the amount of the plating solution PS supplied to the holding portion 2 can be reduced. Therefore, it is possible to prevent the plating solution PS from being excessively supplied to the holding portion 2. If the area of the opening OP is large, the amount of the plating solution PS supplied to the holding portion 2 becomes large, so that the plating solution PS is excessively supplied to the holding portion 2. Therefore, the amount of the plating solution PS supplied to the holding unit 2 exceeds the amount of the plating solution PS that can be held by the holding unit 2. Therefore, the plating solution PS flows out from the holding portion 2. This causes plating defects such as liquid stains. According to the present embodiment, the excessive supply of the plating solution PS to the holding portion 2 can be suppressed by forming the plurality of opening OPs as slits, so that plating defects such as liquid stains can be suppressed. Can be suppressed from occurring.

As shown in FIGS. 2 and 4, the outer shape of the tip portion 1e is square. Therefore, it is easier to supply the plating solution PS to the corners of the portion PR to be plated, which is rectangular, than when the outer shape of the nozzle 1 is circular. Therefore, the plating film PF can be formed at the corners of the squared portion PR to be plated.

The nozzle 1 is configured to supply a degreasing agent, an acid detergent, a neutralizing agent and pure water to the PR to be plated. Therefore, the nozzle 1 can be used to perform degreasing treatment, acid cleaning treatment, neutralization treatment, and water washing.

According to the plating apparatus 200 according to the first embodiment, as shown in FIG. 7, the power supply 3 is configured to apply a voltage to the plating electrode 100 and the plated portion PR. The connection mechanism 4 is configured to connect the plating electrode 100 to the plated portion PR. Therefore, the plating film PF can be formed on the plated portion PR by the plating electrode 100 according to the first embodiment. Therefore, the plating film PF can be selectively formed on a part of the object to be plated PM.

According to the plating method according to the first embodiment, as shown in FIG. 7, the plating electrode 100 is connected to the plated portion PR in a state where a voltage is applied to the nozzle 1 and the plated portion PR. The plating film PF is formed. Therefore, a voltage can be applied to the plating solution PS supplied by the nozzle 1 via the nozzle 1. Therefore, the plating film PF can be selectively formed on the portion (part to be plated PR) to which the plating solution PS is supplied by the nozzle 1. Therefore, the plating film PF can be selectively formed on a part of the object to be plated PM.

As shown in FIGS. 7 and 12, the plating electrode 100 slides on the plated portion PR in a state where the plated electrode 100 is connected to the plated portion PR. Therefore, the relative speed between the plating electrode 100 and the PR to be plated is more likely to be stable than when the plating electrode 100 moves away from the PR to be plated. Therefore, it is possible to form a plating film PF having a uniform thickness.

Embodiment 2.
14 to 19, the configuration of the plating apparatus 200 according to the second embodiment will be described. Unless otherwise specified, the second embodiment has the same configuration and operation and effect as those of the first embodiment. Therefore, the same components as those in the first embodiment are designated by the same reference numerals, and the description thereof will not be repeated.

As shown in FIG. 14, in the connection mechanism 4 according to the present embodiment, the plating electrode 100 is configured to be rotatable around the axis AX of the nozzle 1 on the PR to be plated. The plating electrode 100 is configured to rotate around the axis AX of the nozzle 1 on the PR to be plated. As will be described later, the plating electrode 100 may be configured to slide while rotating on the PR to be plated, but in the present embodiment, the plating electrode 100 is configured to rotate. And is configured so that it does not slide.

It is desirable that the ratio of the surface area of the nozzle 1 to the surface area of the PR to be plated is 75% or more and 100% or less. When the ratio of the surface area of the tip portion 1e to the surface area of the portion PR to be plated is 20% or more and 75% or less, the plating film PF is likely to be uniformly deposited. Further, when the ratio of the surface area of the tip portion 1e to the surface area of the plated portion PR is 20% or more and 75% or less, the precipitation rate of the plating film PF is stable.

As shown in FIGS. 15 to 17, if the ratio of the surface area of the nozzle 1 to the surface area of the plated portion PR is less than 75%, the ratio of the plated portion PR to which the nozzle 1 is not in contact is large. Therefore, the film formation rate is low. Therefore, the production efficiency and the plating quality of the plating film PF are lowered.

As shown in FIG. 18, the outer shape of the tip portion 1e according to the present embodiment is circular. The shape of each of the plurality of openings OP is, for example, circular. The dimensions of each of the plurality of openings OP may be the same as each other. Each of the plurality of openings OPs may be arranged line-symmetrically with respect to the center of the tip portion 1e.

Further, as shown in FIG. 19, each of the plurality of openings OP may be configured as a slit. The plurality of openings OP may include a plurality of fourth openings OP4, a plurality of fifth openings OP5, and a plurality of sixth openings OP6. The plurality of fourth openings OP4 are arranged so as to form the outer shape of the first circle C1. The plurality of fifth openings OP5 are arranged so as to form the outer shape of the second circle C2. The plurality of sixth openings OP6 are arranged so as to form the outer shape of the third circle C3. The second circle C2 is arranged so as to surround the first circle C1. The third circle C3 is arranged so as to surround the second circle C2. The first circle C1, the second circle C2, and the third circle C3 are arranged concentrically.

Next, the plating method according to the second embodiment will be described with reference to FIGS. 14, 20 and 21.

As shown in FIGS. 20 and 14, the plating electrode 100 is connected to the plated portion PR. Subsequently, as shown in FIG. 14, in the present embodiment, the plating electrode 100 is placed around the axis AX of the nozzle 1 on the plated portion PR in a state where the plated electrode 100 is connected to the plated portion PR. Rotate. The plating electrode 100 is rotated by the connection mechanism 4. As a result, the plating film PF is formed as shown in FIG. As will be described later, the plating electrode 100 may slide while rotating on the PR to be plated, but in the present embodiment, the plating electrode 100 does not slide.

It is desirable that the rotation speed of the plating electrode 100 is set so that the relative speed between the plating electrode 100 and the PR to be plated is 12.5 m / min (minutes) or more and 17.5 m / min (minutes) or less.

Subsequently, the action and effect of the present embodiment will be described.
According to the plating electrode 100 according to the second embodiment, as shown in FIG. 14, the connection mechanism 4 is configured such that the plating electrode 100 is rotatable around the axis AX of the nozzle 1 on the PR to be plated. .. When the plated electrode 100 is so small that the plated electrode 100 cannot move sufficiently linearly or curvedly, the plated electrode 100 cannot move sufficiently linearly or curvedly on the plated portion PR. .. For example, the PR of the plated portion such as the substrate and the minute pattern is so small that the plating electrode 100 cannot sufficiently move linearly or curvedly on the PR of the plated portion. Therefore, if the plating electrode 100 does not rotate, the relative speed between the plating electrode 100 and the plated portion PR cannot be sufficiently obtained on the small plated portion PR. This reduces the production efficiency and quality of the plating film PF. According to the present embodiment, the connection mechanism 4 is configured so that the plating electrode 100 can rotate around the axis AX of the nozzle 1 on the PR to be plated. Therefore, even when the PR to be plated is small, the relative speed between the plating electrode 100 and the PR to be plated becomes sufficiently large by rotating the plating electrode 100 on the PR to be plated. Therefore, the plating film PF can be uniformly deposited. In addition, the rate at which the plating film PF precipitates can be stabilized. Therefore, even when the PR of the plated portion is small, it is possible to prevent the production efficiency and quality of the plating film PF from deteriorating.

As shown in FIGS. 18, 19 and 14, the outer shape of the tip portion 1e is circular. If the outer shape of the tip portion 1e is square (see FIGS. 2 and 3), the contact time between the portion of the plated portion PR that contacts the corner of the tip portion 1e and the corner of the tip portion 1e is the tip portion. The contact time is different between the portion of the plated portion PR that contacts the center of 1e and the center of the tip portion 1e. Therefore, the contact time between the plated portion PR and the tip portion 1e differs depending on the position of the plated portion PR. Therefore, the plating film PF is not uniformly formed. According to the present embodiment, since the outer shape of the tip portion 1e is circular, the contact time between the plated portion PR and the tip portion 1e is constant regardless of the position of the plated portion PR. Therefore, it is possible to prevent the plating film PF from being uniformly formed.

According to the plating method according to the second embodiment, as shown in FIG. 14, the plating electrode 100 is the shaft of the nozzle 1 on the plated portion PR in a state where the plated electrode 100 is connected to the plated portion PR. Rotate around AX. Therefore, even when the PR of the plated portion is small, it is possible to prevent the production efficiency and quality of the plating film PF from deteriorating.

Embodiment 3.
22 and 23 will be used to describe the third embodiment and the plating apparatus. Unless otherwise specified, the third embodiment has the same configuration and operation and effect as those of the second embodiment. Therefore, the same components as those in the second embodiment are designated by the same reference numerals, and the description thereof will not be repeated.

As shown in FIG. 22, the connection mechanism 4 according to the present embodiment is configured to be slidable while rotating the plating electrode 100 around the axis AX of the nozzle 1 on the plated portion PR. The plating electrode 100 is configured to slide on the PR to be plated while rotating around the axis AX of the nozzle 1. Therefore, the plating electrode 100 is configured to move linearly along the first direction DR1 while rotating around the axis AX of the nozzle 1 on the portion PR to be plated. Further, as shown in FIG. 23, the plating electrode 100 moves linearly or curvedly along the first direction DR1 and the second direction DR2 while rotating around the axis AX of the nozzle 1 on the plated portion PR. It may be configured to do so.

As shown in FIG. 22, the ratio of the surface area of the nozzle 1 to the surface area of the PR to be plated is preferably 20% or more and 90% or less. When the ratio of the surface area of the tip portion 1e to the surface area of the portion PR to be plated is 20% or more and 90% or less, the plating film PF is likely to be uniformly deposited. Further, when the ratio of the surface area of the tip portion 1e to the surface area of the plated portion PR is 20% or more and 90% or less, the precipitation rate of the plating film PF is stable.

If the ratio of the surface area of the nozzle 1 to the surface area of the plated portion PR is less than 20%, the ratio of the plated portion PR to which the nozzle 1 is not in contact is large. Therefore, the film formation rate is low. Therefore, the production efficiency and the plating quality of the plating film PF are lowered.

If the ratio of the surface area of the nozzle 1 to the surface area of the PR to be plated is larger than 90%, the moving distance of the plating electrode 100 on the surface PP to be plated is small. Therefore, the moving speed of the plating electrode 100 becomes unstable. Therefore, the plating film PF does not precipitate uniformly. In addition, the precipitation rate becomes unstable. Therefore, the production efficiency and plating quality of the plating film PF are lowered.

Next, the plating method according to the third embodiment will be described with reference to FIGS. 22 to 29.
With the plating electrode 100 connected to the plated portion PR, the plated electrode 100 slides on the plated portion PR while rotating around the axis AX of the nozzle 1. When the outer shape of the plated portion PR is square as shown in FIG. 22, the plated electrode 100 is covered with the plated electrode 100 in a state of being connected to the plated portion PR as shown in FIGS. 24 to 26. It moves linearly along the first direction DR1 while rotating around the axis AX of the nozzle 1 on the plating portion PR.

Further, when the outer shape of the plated portion PR is elliptical or circular as shown in FIG. 23, the plating electrode 100 is connected to the plated portion PR as shown in FIGS. 27 to 29 for plating. The electrode 100 moves in a curved shape while rotating around the axis AX of the nozzle 1 on the plated portion PR.

Subsequently, the action and effect of the present embodiment will be described.
According to the plating electrode 100 according to the third embodiment, as shown in FIGS. 22 and 23, the connection mechanism 4 slides the plating electrode 100 on the plated portion PR while rotating it around the axis AX of the nozzle 1. It is configured to be movable. Therefore, the relative speed between the plating electrode 100 and the PR to be plated is more stable than when the plating electrode 100 slides without rotating or when it rotates without sliding. Therefore, it is possible to suppress a decrease in the film forming speed and the plating quality of the plating film PF.

More specifically, if the plating electrode 100 slides without rotating, the relative speed between the plating electrode 100 and the portion PR to be plated becomes zero when the sliding direction of the plating electrode 100 is reversed. Therefore, the film forming speed and the plating quality are lowered. According to the plating electrode 100 according to the present embodiment, in a state where the plating electrode 100 is connected to the plated portion PR, the plated electrode 100 slides on the plated portion PR while rotating around the axis AX of the nozzle 1. Move. Therefore, the relative speed does not become zero even when the sliding direction is reversed. Therefore, it is possible to suppress a decrease in the film forming speed and the plating quality of the plating film PF. As a result, the plating film PF can be uniformly formed. In addition, the precipitation rate of the plating film PF can be stabilized.

Further, if the plating electrode 100 rotates without sliding, the relative velocity at the center portion (axis AX) of the plating electrode 100 is smaller than the relative velocity at the end portion of the plating electrode 100. Therefore, in particular, when the size of the plated portion PR is about the same as that of the plating electrode 100, the film forming speed and the plating quality of the plating film PF are lowered. According to the plating electrode 100 according to the present embodiment, in a state where the plating electrode 100 is connected to the plated portion PR, the plated electrode 100 slides on the plated portion PR while rotating around the axis AX of the nozzle 1. Move. Further, the difference between the relative speed at the central portion and the relative velocity at the end portion of the plating electrode 100 becomes smaller as the plating electrode 100 slides. Therefore, it is possible to suppress a decrease in the film forming speed and the plating quality of the plating film PF.

According to the plating method according to the third embodiment, as shown in FIGS. 22 and 23, in a state where the plating electrode 100 is connected to the plated portion PR, the plating electrode 100 is a nozzle on the plated portion PR. It slides while rotating around the axis AX of 1. Therefore, it is possible to suppress a decrease in the film forming speed and the plating quality of the plating film PF.

Embodiment 4.
The configurations of the plating electrode 100 and the plating apparatus 200 according to the fourth embodiment will be described with reference to FIGS. 30 to 47. Unless otherwise specified, the fourth embodiment has the same configuration and operation and effect as those of the third embodiment. Therefore, the same components as those in the third embodiment are designated by the same reference numerals, and the description thereof will not be repeated.

As shown in FIG. 30, the nozzle 1 according to the present embodiment is cylindrical. The nozzle 1 is a hollow columnar shape. The nozzle 1 includes a side surface 1s. The side surface 1s rises from the tip portion 1e. The side surface 1s surrounds the tip portion 1e. A plurality of penetrating portions TH are provided on the side surface 1s. The plurality of penetrating portions TH penetrate the side surface 1s. The nozzle 1 is configured to supply the plating solution PS (see FIG. 33) through the plurality of penetration portions TH. The nozzle 1 may be configured to supply the plating solution PS (see FIG. 33) through the plurality of openings OP and the plurality of penetration portions TH.

The shape of each of the plurality of penetration portions TH is, for example, circular. The shape of each of the plurality of penetration portions TH may be the same as each other.

As shown in FIG. 31, each of the plurality of penetration portions TH may be configured as a slit. That is, the shape of each of the plurality of penetration portions TH may be rectangular.

As shown in FIG. 32, the plurality of through portions TH may include a plurality of first through holes TH1 and a plurality of second through holes TH2. The plurality of first through holes TH1 and the plurality of second through holes TH2 are provided on the side surface 1s. The plurality of first through holes TH1 are arranged along the axial direction of the nozzle 1 below the plurality of second through holes TH2 in the gravity direction. The plurality of first through holes TH1 are arranged closer to the tip portion 1e than the plurality of second through holes TH2 on the side surface 1s. The opening area of the plurality of first through holes TH1 is smaller than the opening area of the plurality of second through holes TH2. The diameter of the plurality of first through holes TH1 is smaller than the diameter of the plurality of second through holes TH2.

As shown in FIGS. 33 and 34, the holding portion 2 is a holding portion for holding the plating solution PS. The holding portion 2 covers the side surface 1s of the nozzle 1 over the entire circumference. The holding portion 2 covers a plurality of opening OPs and a plurality of penetrating portions TH. The plating solution PS is supplied to the holding portion 2 through each of the plurality of openings OP and the plurality of penetration portions TH.

The object to be plated PM according to this embodiment is, for example, a columnar shape. The object to be plated PM is a hollow columnar shape. The object to be plated PM includes a bottom portion PM1 and a tubular portion PM2. In the present embodiment, the plated portion PR is the inner surface of the bottom portion PM1 and the tubular portion PM2. The bottom PM1 is circular. The tubular portion PM2 rises from the bottom PM1. The tubular portion PM2 is hollow. When the bottom PM1 is circular, the tubular PM2 is cylindrical. The inner diameter of the tubular portion PM2 is equal to or larger than the outer diameter of the plating electrode 100.

As shown in FIGS. 35 and 36, the bottom PM1 may be oval. When the bottom PM1 has an elliptical shape, the tubular PM2 has a hollow elliptical column shape. The inner diameter (minor diameter) of the tubular portion PM2 is equal to or larger than the outer diameter of the plating electrode 100.

As shown in FIGS. 37 and 38, the plating device 200 may further include a robot 300 and a control device 400. The robot 300 is configured to move the plating electrode 100. The robot 300 includes a force sensor 301. The force sensor 301 is configured to measure the load applied to the plating electrode 100 by the contact between the plating electrode 100 and the PR to be plated. The control device 400 is configured to control the movement of the plating electrode 100 by the robot 300. The method of controlling the robot 300 by the control device 400 will be described in detail later.

As shown in FIGS. 39 and 40, the plating device 200 may further include a robot 300, a control device 400, and a DC power supply 500. The DC power supply 500 is connected to the control device 400. The control device 400 is configured to control the robot 300 according to the electric resistance output 501 of the DC power supply 500. The method of controlling the robot 300 by the control device 400 will be described in detail later.

As shown in FIGS. 41 and 42, the control device 400 may be connected to the pump 7. The control device 400 may be configured to control the supply amount of the plating solution PS by the pump 7. Specifically, the control device 400 may be configured to adjust the supply amount of the plating solution PS by the pump 7 based on the load measured by the force sensor 301.

As shown in FIGS. 43 and 44, the control device 400 may be configured to adjust the supply amount of the plating solution PS by the pump 7 based on the electric resistance output 501.

Next, the plating method according to the fourth embodiment will be described with reference to FIGS. 37, 39, 45 and 46.

First, as shown in FIGS. 37 and 45, in step S101, the plating electrode 100 is connected to the plated portion PR by the robot 300. Specifically, the plating electrode 100 is connected to the inner surfaces of the bottom PM1 and the tubular PM2. The tip portion 1e of the nozzle 1 is connected to the bottom PM1 via the holding portion 2. The side surface 1s of the nozzle 1 is connected to the tubular portion PM2 via the holding portion 2.

Subsequently, with the plating electrode 100 connected to the plated portion PR, the plated electrode 100 slides on the plated portion PR while rotating around the axis of the nozzle 1. When the inner diameter of the tubular portion PM2 is equal to or larger than the outer diameter of the plating electrode 100, the plating electrode 100 moves so that the side portion of the plating electrode 100 keeps in contact with the inner surface of the tubular portion PM2.

The contact between the plating electrode 100 and the PR to be plated is controlled by being detected by the force sensor 301. In step S102, it is determined whether or not the load detected by the force sensor 301 is equal to or less than the lower limit value. When the contact area between the plating electrode 100 and the PR to be plated is small, the load acting on the force sensor 301 is small. When the contact area between the plating electrode 100 and the PR to be plated is large, the load acting on the force sensor 301 is large.

When the load sensed by the force sensor 301 is not more than the lower limit value, in step S103, the robot 300 covers the plating electrode 100 until the contact area between the plating electrode 100 and the plated portion PR becomes equal to or more than the lower limit value. Bring it closer to the plated part PR. Then, the process returns to step S102. If the load acting on the force sensor 301 is not equal to or less than the lower limit, it is determined in step S104 whether the load detected by the force sensor 301 is equal to or greater than the upper limit.

When the load sensed by the force sensor 301 is equal to or greater than the upper limit value, the robot 300 in step S105 plated the plating electrode 100 until the contact area between the plating electrode 100 and the plated portion PR becomes less than the upper limit value. Keep away from the club PR. Then, the process returns to step S102. If the load detected by the force sensor 301 is not equal to or higher than the upper limit value, the contact control step ends.

As shown in FIGS. 39 and 46, the contact between the plating electrode 100 and the portion PR to be plated is a change in the electric resistance (electrical resistance output 501) due to a change in the contact area between the plating electrode 100 and the portion PR to be plated. Is controlled by being detected. First, in step S201, the plating electrode 100 is connected to the object to be plated PM by a robot. Subsequently, in step S202, a current is applied to the plating electrode 100.

In step S203, it is determined whether or not the electrical resistance of the plating electrode 100 and the PR to be plated is equal to or higher than the specified upper limit value. When the contact area between the plating electrode 100 and the PR to be plated is small, the electrical resistance at the contact between the plating electrode 100 and the PR to be plated is large. Further, when the contact area between the plating electrode 100 and the PR to be plated is large, the electric resistance at the contact between the plating electrode 100 and the PR to be plated is small. When the electric resistance is equal to or more than the upper limit value, in step S204, the robot 300 brings the plating electrode 100 closer to the portion to be plated PR until the electric resistance becomes less than the upper limit value. Then, the process returns to step S203. Further, when the electric resistance is not equal to or more than the upper limit value, it is determined in step S205 whether or not the electric resistance is equal to or less than the lower limit value.

When the electric resistance is equal to or less than the lower limit value, in step S206, the robot 300 keeps the plating electrode 100 away from the object to be plated PM until the electric resistance becomes larger than the lower limit value. Then, the process returns to step S203. If the electrical resistance is equal to or higher than the lower limit, the contact control step ends.

Next, a method of controlling the flow rate of the plating solution PS according to the fourth embodiment will be described with reference to FIGS. 41 and 47.

As shown in FIGS. 41 and 47, first, in step S301, the plating electrode 100 is connected to the object to be plated PM.

Subsequently, in step S302, it is determined whether or not the tip portion 1e of the nozzle 1 is in contact with the plated portion PR. When the tip portion 1e of the nozzle 1 is in contact with the plated portion PR, it is determined in step S303 whether or not the side surface 1s of the nozzle 1 is in contact with the plated portion PR. When the tip portion 1e and the side surface 1s of the nozzle 1 are in contact with the plated portion PR, the flow rate of the plating solution PS of the pump 7 corresponds to the contact area of the tip portion 1e and the side surface 1s with the plated portion PR in step S304. Is set to the value to be used. Further, when the tip portion 1e of the nozzle 1 is in contact with the plated portion PR and the side surface 1s is not in contact with the plated portion PR, the flow rate of the plating solution PS of the pump 7 is the tip portion 1e and the plated portion in step S305. It is set to a value corresponding to the contact area with PR.

When the tip portion 1e of the nozzle 1 is not in contact with the surface to be plated, it is determined in step S306 whether the side surface 1s of the nozzle 1 is in contact with the portion PR to be plated. When the tip portion 1e of the nozzle 1 is not in contact with the plated portion PR and the side surface 1s is in contact with the plated portion PR, the flow rate of the plating solution PS of the pump 7 is in contact with the side surface 1s and the plated portion in step S307. It is set to a value corresponding to the contact area with PR. Further, when the tip portion 1e and the side surface 1s of the nozzle 1 are not in contact with the plated portion PR, the flow rate of the plating solution PS of the pump 7 is set to zero in step S308.

Subsequently, the action and effect of the present embodiment will be described.
According to the plating electrode 100 according to the fourth embodiment, as shown in FIG. 33, the nozzle 1 is configured to supply the plating solution PS through a plurality of penetration portions TH provided on the side surface 1s. Therefore, the plating solution PS can be supplied from the side surface 1s of the nozzle 1 to the inner surface of the tubular portion PM2 of the object to be plated PM. Therefore, the plating solution PS can be supplied to the inner surface of the tubular portion PM2 of the object to be plated PM having a cylindrical shape or an elliptical shape. Thereby, the plating film PF can be formed simultaneously on both the inner surface and the bottom PM1 of the tubular portion PM2 of the object to be plated through each of the plurality of penetration portions TH and the plurality of openings OP.

As shown in FIG. 33, the nozzle 1 is cylindrical. Therefore, the plating solution PS can be supplied to the plated portion PR on the inner surface of the object to be plated PM having a cylindrical shape or an elliptical tubular shape. Further, by rotating the plating electrode 100 around the axial direction, a wider range of the plated portion PR on the inner surface of the plated portion PR having a cylindrical shape or an elliptical cylinder shape may be plated. When the nozzle 1 is provided with a plurality of through portions TH, the opening OP may not be provided.

As shown in FIG. 32, the opening area of the plurality of first through holes TH1 may be smaller than the opening area of the plurality of second through holes TH2. In this case, it is possible to reduce the difference in the supply amount of the plating solution PS from each penetrating portion TH due to gravity.

As shown in FIG. 47, the control device 400 may be configured to control the supply amount of the plating solution PS by the pump 7. In this case, since the plating solution PS can be supplied according to the contact area between the plating electrode 100 and the portion PR to be plated, it is possible to suppress a defect in the quality of the plating film PF due to a shortage of the plating solution PS. Further, it is possible to suppress the deterioration of the plating solution PS more than necessary.

Embodiment 5.
The configurations of the plating electrode 100 and the plating apparatus 200 according to the fifth embodiment will be described with reference to FIGS. 48 and 49. Unless otherwise specified, the fifth embodiment has the same configuration and operation and effect as those of the fourth embodiment. Therefore, the same components as those in the fourth embodiment are designated by the same reference numerals, and the description thereof will not be repeated.

As shown in FIG. 48, the plating electrode 100 according to the present embodiment further includes a transport material 22 for transporting the plating solution PS. The plating electrode 100 may further include a protective portion 23.

The transport material 22 is filled inside the nozzle 1. The transport material 22 includes a first end portion 221, a second end portion 222, and a connection portion 223. The first end portion 221 is inserted inside the nozzle 1. The first end portion 221 reaches the tip end portion 1e. The first end portion 221 may be filled in each of the plurality of openings OP and the plurality of penetration portions TH. The second end portion 222 is immersed in the plating solution PS. Specifically, the second end portion 222 is immersed in the plating solution PS in the reserve tank 52 by being arranged in the reserve tank 52. The connection portion 223 connects the first end portion 221 and the second end portion 222.

The transport material 22 is configured to transport the plating solution PS from the second end portion 222 to the first end portion 221 by a capillary phenomenon. The transport material 22 is configured to transport the plating solution PS from the second end portion 222 to the tip portion 1e by a capillary phenomenon.

The transport material 22 has a fine pore-like structure that causes a capillary phenomenon with respect to the plating solution PS. That is, the transport material 22 is made of a porous material that causes a capillary phenomenon with respect to the plating solution PS. The transport material 22 may have a fine tubular structure that causes a capillary phenomenon with respect to the plating solution PS. The transport material 22 is made of, for example, a sponge or a non-woven fabric. The transport material 22 is made of a material that does not react with the plating solution PS.

Each of the plurality of openings OP and the plurality of penetration portions TH may be filled with the transport material 22. In this case, the transport material 22 may be configured to transport the plating solution PS from the second end 222 to each of the plurality of openings OP and the plurality of penetration portions TH by capillarity.

Although not shown, the transport material 22 may not be filled in each of the plurality of openings OP and the plurality of penetration portions TH. That is, each of the plurality of openings OP and the plurality of penetration portions TH may be configured in a cavity.

The transportation of the plating solution PS from the transport material 22 to the protective portion 23 at the tip portion 1e of the nozzle 1 may be realized by a capillary phenomenon caused by the transport material 22 filled in the opening OP, or in the cavity opening OP. May be realized by gravity rather than capillarity.

Although the tip portion 1e is arranged downward in FIG. 48, the tip portion 1e may face in another direction. That is, the tip portion 1e may be oriented sideways or upward, for example.

The protection unit 23 covers the connection unit 223. As a result, the protection unit 23 protects the connection unit 223. The first end portion 221 and the second end portion 222 are exposed from the protection portion 23. In FIG. 49, the protection unit 23 is not shown for convenience of explanation.

In order for the transport material 22 to cause a capillary phenomenon, the maximum height position of the transport material 22 from the liquid surface of the plating solution PS is set to h (unit: m), and the transport material 22 and the plating solution PS are used. The surface tension between them is T (unit: N / m), the contact angle between the transport material 22 and the plating solution PS is θ, the density of the plating solution PS is ρ (unit: kg / m ³ ), and the gravitational acceleration. Is g (unit: m / s ² ), and the following equation must be satisfied when the average pore diameter of the pore-shaped structure of the transport material 22 or the average pipe diameter of the tubular structure is r (unit: m). ..

The maximum height position of the transport material 22 from the plating solution PS is the maximum height position of the transport material 22 from the plating solution PS in the reserve tank 52. Further, in FIG. 49, the reserve tank 52 is arranged at a height position lower than that of the plating tank 51, but the reserve tank 52 may be arranged at a height position higher than that of the plating tank 51.

Subsequently, the action and effect of the present embodiment will be described.
According to the plating electrode 100 according to the fifth embodiment, as shown in FIG. 48, the transport material 22 is configured to transport the plating solution PS from the second end portion 222 to the first end portion 221 by a capillary phenomenon. Has been done. Therefore, the plating solution PS can be transported to the tip portion 1e by the capillary phenomenon. Therefore, the plating solution PS can be transported to the tip portion 1e without using the pump 7 (see FIG. 9).

As shown in FIG. 48, the plurality of openings OP are arranged below the plurality of penetration portions TH along the direction of gravity. Therefore, if the plating solution PS is transported to the plurality of openings OP and the plurality of penetration portions TH only by the pump 7 (see FIG. 9) and gravity, the supply amount of the plating solution PS in the plurality of openings OP will be increased. It is larger than the plating solution PS supply amount in the plurality of penetration portions TH. Therefore, if the plating solution PS is transported to the tip portion 1e by the pump 7 (see FIG. 9) and gravity, the supply amount of the plating solution PS becomes non-uniform depending on the height position, and the plating quality also depends on the height position. It becomes non-uniform.

On the other hand, in the present embodiment, the transport material 22 is configured to transport the plating solution PS from the second end portion 222 to the first end portion 221 by a capillary phenomenon. In this case, the amount of the plating solution PS supplied to each of the plurality of openings OP and the plurality of penetrating portions TH as compared with the case where the plating solution PS is transported to the tip portion 1e by the pump 7 (see FIG. 9) and gravity. Can be made uniform. Therefore, the quality of plating can be made uniform.

Next, Examples 1 to 12 and Comparative Examples 1 to 6 will be described mainly with reference to FIGS. 4, 14, 22, Tables 1 and 2.

First, the plating conditions according to Examples 1 to 12 and Comparative Examples 1 to 6 will be described with reference to FIGS. 22 and 1.

In Examples 1 to 12, a plated electrode 100 (see FIG. 22) having a circular tip portion 1e was used. The plating method according to the first to third embodiments is the plating method according to the first embodiment (see FIG. 4). The plating method according to Examples 4 to 6 is the plating method according to the third embodiment (see FIG. 22). The plating method according to Examples 7 to 9 is the plating method according to the second embodiment (see FIG. 14). The plating method according to Examples 10 to 12 is the plating method according to the third embodiment (see FIG. 22).

Therefore, in Examples 1 to 3, the plating electrode 100 slid and did not rotate. In Examples 4 to 6, the plating electrode 100 slid and rotated. In Examples 7 to 9, the plating electrode 100 did not slide and rotated. In Examples 10 to 12, the plating electrode 100 slid and rotated.

As shown in Table 1, in Examples 1 to 12, the outer diameter of the plating electrode 100 is 10 mm. The material of the nozzle 1 is platinum (Pt). The current density is 15 A / dm ² . The plating electrode 100 is configured as an anode. The plating solution PS is a silver plating solution. The silver plating solution is cyanide silver plating solution 30820 (manufactured by Aikoh Co., Ltd.).

In Examples 1 to 12, the target values for the thickness (film thickness) of the plating film PF are different. In Example 1, the target value of the film thickness is 2 μm. In Example 2, the target value of the film thickness is 5 μm. In Example 3, the target value of the film thickness is 10 μm. In Example 4, the target value of the film thickness is 2 μm. In Example 5, the target value of the film thickness is 5 μm. In Example 6, the target value of the film thickness is 10 μm. In Example 7, the target value of the film thickness is 2 μm. In Example 8, the target value of the film thickness is 5 μm. In Example 9, the target value of the film thickness is 10 μm. In Example 10, the target value of the film thickness is 2 μm. In Example 11, the target value of the film thickness is 5 μm. In Example 12, the target value of the film thickness is 10 μm.

In Examples 1 to 6, a plating film PF was formed on the first object to be plated PM. The material of the first object to be plated PM is oxygen-free copper (C1011 material). The first object to be plated PM is a square lumber having dimensions of 40 mm × 40 mm × 10 mm. The dimension of the plated portion PR of the first object to be plated PM is 10 mm × 40 mm. The surface to be plated PP of the first object to be plated PM has a planar shape.

In Examples 7 to 12, a plating film PF was formed on the second object to be plated PM. The material of the second object to be plated PM is oxygen-free copper (C1011 material). The second object to be plated PM is a square lumber having dimensions of 20 mm × 20 mm × 10 mm. The PR of the plated portion of the second object to be plated PM is a circle having a diameter of 12.5 mm. The plated portion PR is configured as a flat pad.

In Comparative Examples 1 to 6, a plating film PF was formed on the object to be plated PM by brush plating. Therefore, a brush-shaped electrode was used as the plating electrode 100. The material of the electrode is platinum (Pt). The current density is 15 A / dm ² . In Comparative Examples 1 to 3, a plating film PF was formed on the first object to be plated PM. In Comparative Examples 4 to 6, a plating film PF was formed on the second object to be plated PM.

In Comparative Example 1, the target value of the film thickness is 2 μm. In Comparative Example 2, the target value of the film thickness is 5 μm. In Comparative Example 3, the target value of the film thickness is 10 μm. In Comparative Example 4, the target value of the film thickness is 2 μm. In Comparative Example 5, the target value of the film thickness is 5 μm. In Comparative Example 6, the target value of the film thickness is 10 μm.

Next, the plating methods according to Examples 1 to 12 and Comparative Examples 1 to 6 will be described.
In Examples 1 to 12 and Comparative Examples 1 to 6, the following degreasing treatment to neutralization treatment were carried out in common.

First, degreasing treatment was carried out on the object to be plated PM. Specifically, the object to be plated PM was degreased with a degreasing agent ELC-400 (manufactured by World Metal Co., Ltd.). As a result, the organic matter on the surface of the object to be plated PM was removed. Subsequently, the object to be plated PM was immersed in pure water for 1 minute and then taken out of pure water.

Subsequently, an acid cleaning treatment was carried out on the PM to be plated. Specifically, the object to be plated PM was washed with 30 wt% (% by weight) nitric acid. Subsequently, the object to be plated PM was immersed in pure water for 1 minute and then taken out of pure water.

Subsequently, a neutralization treatment was carried out on the object to be plated PM. Specifically, the object to be plated PM was neutralized with a neutralizing agent # 411Y (manufactured by Dipsol Co., Ltd.). This removed traces of acid that were not removed by washing with water after the pickling treatment. Subsequently, the object to be plated PM was immersed in pure water for 1 minute and then taken out of pure water.

Subsequently, in Examples 1 to 3, a plating film PF was formed on the first object to be plated PM by the plating method according to the first embodiment (see FIG. 4). Therefore, the plating electrode 100 slides on the plated portion PR of the first object to be plated PM along the first direction DR1.

In Examples 4 to 6, a plating film PF was formed on the first object to be plated PM by the plating method according to the third embodiment (see FIG. 22). Therefore, the plating electrode 100 slides on the plated portion PR of the first object to be plated PM along the first direction DR1 and rotates around the axis AX of the nozzle 1 on the plated portion PR.

In Examples 7 to 9, a plating film PF was formed on the second object to be plated PM by the plating method according to the second embodiment (see FIG. 14). Therefore, the plating electrode 100 rotated around the axis AX of the nozzle 1 on the PR to be plated.

In Examples 10 to 12, a plating film PF was formed on the second object to be plated PM by the plating method according to the third embodiment (see FIG. 22). Therefore, the plating electrode 100 slides on the plated portion PR of the first object to be plated PM along the first direction DR1 and rotates around the axis AX of the nozzle 1 on the plated portion PR.

In Comparative Examples 1 to 6, a plating film PF was formed on the object to be plated PM by brush plating. Therefore, the brush-shaped plating electrode 100 slides on the plated portion PR along the first direction DR1.

Subsequently, in Examples 1 to 12 and Comparative Examples 1 to 6, the following water washing treatment was carried out in common. The object to be plated PM was washed with water. Specifically, the object to be plated PM was immersed in pure water for 1 minute and then taken out of pure water. The removed material PM to be plated was dried.

Next, the evaluation method and the evaluation result of the plating film PF in Examples 1 to 12 and Comparative Examples 1 to 6 will be described.

Common to Examples 1 to 12 and Comparative Examples 1 to 6, the following evaluations on film thickness uniformity, plating burn, and adhesion were performed.

In the evaluation of the uniformity of the film thickness, the uniformity of the film thickness was evaluated by measuring the film thickness with a fluorescent X-ray film thickness meter.

Specifically, in Examples 1 to 6 and Comparative Examples 1 to 3, the position of 0 mm and the position 10 mm away from the first end, where the first end of the plated portion PR of the first object to be plated PM is 0 mm. The film thickness was measured at a total of 5 locations: a position 20 mm away from the first end, a position 30 mm away from the first end, and a position 40 mm away from the first end. The position 40 mm away from the first end is the second end of the plated portion PR.

Further, in Examples 7 to 12 and Comparative Examples 4 to 6, the center of the PR to be plated is 0 mm, and the position is 0 mm, the position is 10 mm away from the center in the radial direction, and the position is 12.5 mm away from the center in the radial direction. The film thickness was measured at a total of three locations. The position separated from the center by 12.5 mm in the radial direction is the outer peripheral end portion of the plated portion PR.

In each of Examples 1 to 6 and Comparative Examples 1 to 3, the standard deviation σ and the average of the film thickness were calculated based on the film thickness measured at the above five points in total. In each of Examples 7 to 12 and Comparative Examples 4 to 6, the standard deviation σ and the average of the film thickness were calculated based on the film thickness measured at the above three points in total. Subsequently, the ratio of the mean to the standard deviation σ was calculated. The average ratio to the standard deviation σ was taken as a representative value indicating the variation in film thickness.

As shown in Table 2, in Example 1, the film thickness variation was 10.5%. In Example 2, the film thickness variation was 8.6%. In Example 3, the film thickness variation was 8.5%. In Example 4, the film thickness variation was 4.3%. In Example 5, the film thickness variation was 4.4%. In Example 6, the film thickness variation was 4.3%. In Example 7, the film thickness variation was 42.4%. In Example 8, the film thickness variation was 45.3%. In Example 9, the film thickness variation was 45.3%. In Example 10, the film thickness variation was 9.1%. In Example 11, the film thickness variation was 7.2%. In Example 12, the film thickness variation was 6.8%.

Further, in Comparative Example 1, the film thickness variation was 27.2%. In Comparative Example 2, the film thickness variation was 27.0%. In Comparative Example 3, the film thickness variation was 26.8%. In Comparative Example 4, the film thickness variation was 58.9%. In Comparative Example 5, the film thickness variation was 65.3%. In Comparative Example 6, the film thickness variation was 49.1%.

In the evaluation of plating burn, the presence or absence of plating burn was evaluated by observing the appearance. Specifically, the presence or absence of plating burn was evaluated by observing the surface of the plating film PF with an optical microscope having a magnification of 100 times.

No plating burn was observed in Examples 1 to 12. Therefore, plating burn did not occur. In Comparative Examples 1 to 6, plating burn was observed. Therefore, plating burn occurred.

In the evaluation of the adhesion, the adhesion of the plating film PF to the PR to be plated was evaluated by the peeling test of the plating film PF. The evaluation of the adhesion was carried out based on the tape test method specified in JIS standard H8504 (1999). Specifically, it was evaluated whether or not the plating film PF was peeled off from the plated portion PR by peeling off the cellophane tape (registered trademark) manufactured by Nichiban Co., Ltd., which was in close contact with the plating film PF.

In Examples 1 to 12, the plating film PF did not peel off. In Comparative Examples 1 to 6, the plating film PF was peeled off.

From the above, it was shown that the examples of the plating method of the present disclosure are superior to the comparative examples of brush plating in that plating burn does not occur and the adhesion is high. Further, it was shown that Examples 1 to 6 and 9 to 12 are superior to the comparative examples relating to brush plating in that the variation in film thickness is small. Therefore, it was shown that the plating electrode 100 according to the present disclosure slides on the PR to be plated to obtain a plating film PF having a smaller variation in film thickness than brush plating.

It should be considered that the embodiments and examples disclosed this time are exemplary in all respects and not restrictive. The scope of the present disclosure is shown by the scope of claims rather than the above description, and is intended to include all modifications within the meaning and scope of the claims.

1 nozzle, 1e tip, 2 holding part, 3 power supply, 4 connection mechanism, 22 transport material, 23 protection part, 100 plating electrode, 200 plating device, AX shaft, PF plating film, PS plating solution, PR plated part, OP opening.

Claims

A nozzle that includes the tip and supplies the plating solution through the tip,
A holding portion for holding the plating solution is provided.
The holding portion covers the tip portion of the nozzle.
The nozzle is a plated electrode configured to apply a voltage.
A plurality of openings are provided at the tip portion, and the tip portion is provided with a plurality of openings.
The plating electrode according to claim 1, wherein the nozzle is configured to supply the plating solution through the plurality of openings.
The plated electrode according to claim 1 or 2, wherein the nozzle comprises any material selected from the group consisting of platinum, titanium-platinum, titanium-iridium oxide, stainless steel and carbon.
The nozzle is columnar and has a columnar shape.
The nozzle includes a side surface that rises from the tip.
A plurality of penetrating portions are provided on the side surface.
The plating electrode according to any one of claims 1 to 3, wherein the nozzle is configured to supply the plating solution through the plurality of penetrating portions.
Further provided with a transport material for transporting the plating solution,
The transport material includes a first end and a second end.
The first end is inserted inside the nozzle.
The second end portion is immersed in the plating solution and is immersed in the plating solution.
The plating electrode according to any one of claims 1 to 4, wherein the transport material is configured to transport the plating solution from the second end portion to the first end portion by a capillary phenomenon.
The nozzle is columnar and has a columnar shape.
A plurality of openings are provided at the tip portion, and the tip portion is provided with a plurality of openings.
The nozzle includes a side surface that surrounds the tip.
A plurality of penetrating portions are provided on the side surface.
The nozzle is configured to supply the plating solution through the plurality of openings and the plurality of penetrations.
Further provided with a transport material for transporting the plating solution,
The transport material includes a first end and a second end.
The first end portion is filled in each of the plurality of openings and the plurality of penetration portions.
The second end portion is immersed in the plating solution and is immersed in the plating solution.
The plating electrode according to claim 1, wherein the transport material is configured to transport the plating solution from the second end portion to the first end portion by a capillary phenomenon.
It is a plating device for forming a plating film on the part to be plated.
The plated electrode according to any one of claims 1 to 6 and the plated electrode.
A power supply electrically connected to each of the plated electrode and the plated portion,
It is equipped with a connection mechanism connected to the plating electrode.
The power supply is configured to apply a voltage to the plating electrode and the plated portion.
The connection mechanism is a plating apparatus configured to connect the plating electrode to the portion to be plated.
The plating apparatus according to claim 7, wherein the connection mechanism is configured so that the plating electrode can rotate around the axis of the nozzle on the portion to be plated.
The plating apparatus according to claim 8, wherein the connection mechanism is configured to be slidable while rotating the plating electrode around the axis of the nozzle on the portion to be plated.
It is a plating method for forming a plating film on the part to be plated with a plating solution.
A step of holding the plating solution in the holding portion by supplying the plating solution from the tip portion to the holding portion covering the tip portion of the nozzle of the plating electrode.
A plating method comprising a step of forming a plating film by connecting a plating electrode to the portion to be plated while a voltage is applied to the nozzle and the portion to be plated.
The plating method according to claim 10, wherein the plating electrode rotates around the axis of the nozzle on the portion to be plated while the plating electrode is connected to the portion to be plated.
The plating method according to claim 11, wherein the plated electrode slides on the plated portion while rotating around the axis of the nozzle while the plated electrode is connected to the plated portion.