WO2022011547A1 - 图像传感器以及相关电子装置 - Google Patents

图像传感器以及相关电子装置 Download PDF

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Publication number
WO2022011547A1
WO2022011547A1 PCT/CN2020/101880 CN2020101880W WO2022011547A1 WO 2022011547 A1 WO2022011547 A1 WO 2022011547A1 CN 2020101880 W CN2020101880 W CN 2020101880W WO 2022011547 A1 WO2022011547 A1 WO 2022011547A1
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Prior art keywords
pixel
sub
pixels
subpixel
image sensor
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PCT/CN2020/101880
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English (en)
French (fr)
Inventor
赵维民
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Shenzhen Goodix Technology Co Ltd
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Shenzhen Goodix Technology Co Ltd
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Priority to PCT/CN2020/101880 priority Critical patent/WO2022011547A1/zh
Priority to CN202080033580.8A priority patent/CN115152198B/zh
Publication of WO2022011547A1 publication Critical patent/WO2022011547A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels

Definitions

  • the present application relates to a sensor, and in particular, to an image sensor and related electronic devices.
  • Image sensors have been mass-produced and applied. When evaluating the performance of an image sensor, at least the low-light sensitivity and signal-to-noise ratio of the image sensor are usually considered. Therefore, there is a need for an innovative design to improve the light-sensing capability of an image sensor in low light and at the same time improve the signal-to-noise ratio of the image sensor.
  • One of the objectives of the present application is to disclose a sensor, especially an image sensor and related electronic devices, to solve the above problems.
  • An embodiment of the present application discloses an image sensor, which is coupled to an image processor, and the image processor creates an image based on sensing data provided by the image sensor.
  • the image sensor includes: a pixel array, including: a first a floating diffusion node; and a first pixel, including a first sub-pixel and a second sub-pixel, sharing the first floating diffusion node, the first sub-pixel is a red sub-pixel, a green sub-pixel and a blue sub-pixel One of them, wherein the second sub-pixel is not one of the red sub-pixel, the green sub-pixel and the blue sub-pixel, and the first floating diffusion node is disposed on the first sub-pixel and the first sub-pixel between two sub-pixels.
  • An embodiment of the present application discloses an electronic device.
  • the electronic device includes the aforementioned image processor and image sensor.
  • the image sensor disclosed in the present application further improves the four-bayer pattern to reduce the degree of difference in light sensitivity among multiple pixels, thereby increasing the exposure time, thereby improving the signal-to-noise ratio of red data, green data or blue data .
  • each of the plurality of pixels has sub-pixels with strong light-sensing ability, such as white sub-pixels, so the light-sensing ability of the image sensor under low light can also be improved.
  • FIG. 1 is a schematic diagram of an embodiment of an image sensor of the present application.
  • FIG. 2 is a schematic diagram of an embodiment of a pixel group of the present application.
  • FIG. 3A is a schematic diagram of another embodiment of the pixel group of the present application.
  • FIG. 3B is a schematic diagram of yet another embodiment of the pixel group of the present application.
  • FIG. 4 is a schematic diagram of still another embodiment of the pixel group of the present application.
  • FIG. 5 is a schematic diagram of still another embodiment of the pixel group of the present application.
  • FIG. 6A is a timing diagram of an embodiment of a signal of the present application.
  • FIG. 6B is a timing diagram of another embodiment of the signal of the present application.
  • FIG. 7 is a timing diagram of yet another embodiment of the signal of the present application.
  • FIG. 8A is a timing diagram of yet another embodiment of the signal of the present application.
  • FIG. 8B is a timing diagram of yet another embodiment of the signal of the present application.
  • FIG. 9 is a timing diagram of yet another embodiment of the signal of the present application.
  • FIG. 10 is a timing diagram of yet another embodiment of the signal of the present application.
  • FIG. 11 is a schematic diagram of an embodiment in which the image processor and the image sensor shown in FIG. 1 are applied to an electronic device.
  • first and second features are in direct contact with each other; and may also include Certain embodiments may have additional components formed between the first and second features described above, such that the first and second features may not be in direct contact.
  • present disclosure may reuse reference numerals and/or reference numerals in various embodiments. Such reuse is for brevity and clarity, and does not in itself represent a relationship between the different embodiments and/or configurations discussed.
  • spatially relative terms such as “below”, “below”, “below”, “above”, “above” and the like, may be used to facilitate the description of the drawings. relationship between one component or feature shown with respect to another component or feature.
  • These spatially relative terms are intended to encompass many different orientations of the device in use or operation in addition to the orientation depicted in the figures.
  • the device may be positioned in other orientations (eg, rotated 90 degrees or at other orientations) and these spatially relative descriptors should be interpreted accordingly.
  • pixel groups are mostly composed of Bayer patterns, for example, composed of one red pixel (R), two green pixels (G) and one blue pixel (B), abbreviated as RGGB.
  • the clear pixel C may be a white pixel (W) or a yellow pixel (Y).
  • the derived modified pattern may consist of one red pixel, two yellow pixels (Y) and one blue pixel, abbreviated as RYYB, or, for example, one red pixel, one green pixel, one white pixel (W) and one blue pixel.
  • Color pixel composition referred to as RGWB.
  • each pixel in the pixel group is divided into multiple sub-pixels of the same color.
  • Shared floating diffusion nodes such as four subpixels.
  • the determination of the overall exposure time of the other improved patterns mentioned above is limited to avoid overexposure of the clear pixels C.
  • the photosensitive ability of the red, green or blue pixels is only about one-half or less of that of the clear pixel C. Therefore, if the red, green or blue pixels are exposed according to the exposure time of the clear pixel C, The amount of red, green, or blue data available to a pixel group is greatly reduced, resulting in a poor signal-to-noise ratio for red, green, or blue data.
  • the present application disperses a plurality of clear sub-pixels in the clear pixel C into the red pixels R, green pixels G and blue pixels B in the same pixel group, so as to reduce the number of pixels in the pixel group. Therefore, it is possible to improve the light sensitivity in low light, and at the same time increase the data volume of red data, green data or blue data.
  • the details are as follows.
  • FIG. 1 is a schematic diagram of an embodiment of an image sensor 100 coupled to an image processor 50 of the present application, wherein the image processor 50 creates an image based on sensing data provided by the image sensor 100 .
  • the image sensor 100 includes a pixel array (not shown) composed of a plurality of pixels 110 and a control signal generating circuit 120 . For simplicity of illustration, only one pixel 110 is shown in FIG. 1 .
  • the pixel 110 includes a plurality of sub-pixels 112 and a pixel circuit 114, wherein the plurality of sub-pixels 112 includes sub-pixels 112_1 to 112_n, where n is a positive integer greater than 1.
  • the sub-pixels 112_1 to 112_4 share the same floating diffusion node FD, and the floating diffusion node FD may be located between the sub-pixels 112_1 to 112_4 on the circuit layout. That is, the pixel 110 has a four-shared structure.
  • subpixel 112 includes photodiode PD and microlens 160 (shown in FIG. 2 ).
  • the microlens 160 is used to focus the light entering the sub-pixel 112 onto the photodiode PD, and the photodiode PD is used to convert the optical signal into an electrical signal.
  • the photodiode PD may be a photodiode with electrons as main carriers, or a photodiode with holes as main carriers.
  • photodiode PD is intended to encompass essentially any type of photon or light detection element, such as a light gate or other photosensitive region.
  • the pixel circuit 114 is used to selectively couple to the sub-pixels 112_1 to 112_4 and selectively output column output signals related to the charges generated by the sub-pixels 112_1 to 112_4 to the image processor 50 , that is, the column output signals include images Sensing data provided by the sensor 100 .
  • the pixel circuit 114 includes transfer gates 116_1 , 116_2 , 116_3 and 116_4 , a reset gate 117 , a source follower 118 , a row select gate 119 and a capacitor 120 .
  • the transfer gates 116_1 , 116_2 , 116_3 and 116_4 are controlled by the control signals TG1 , TG2 , TG3 and TG4 provided by the control signal generating circuit 120 respectively to selectively transfer the charges generated by the corresponding sub-pixels 112_1 to 112_4 to the floating diffusion nodes. FD. Then, through the capacitor 120 coupled between the floating diffusion node FD and the reference voltage 190, the electric energy brought by the charges is stored in the capacitor 120 to establish an initial sensing voltage at the floating diffusion node FD. The initial sensing voltage is amplified by the source follower 118 coupled to the reference voltage VDD, and the amplified sensing voltage is output at the drain of the source follower 118.
  • the row selection gate 119 is controlled by a row selection signal SEL provided by a row selector (not shown) to selectively output the amplified sensing voltage as a column output signal to the image processor 50 .
  • Image processor 50 builds an image based on the column output signals.
  • the reset gate 117 is controlled by the reset signal RST provided by the control signal generating circuit 120 to selectively use the reference voltage VDD to clear the charges on the floating diffusion node FD.
  • a plurality of pixels 110 may constitute a single pixel group 140 (as shown in FIG. 2 ), and the pixel array may be formed by repeatedly arranging the pixel groups.
  • a single pixel group 140 is formed by four pixels 110 (ie, 110_1 , 110_2 , 110_3 and 110_4 as shown in FIG. 2 ).
  • the pixel group 140 of the present invention has a specific pattern, so that the difference in light sensitivity between any two pixels 110 in the same pixel group 140 is smaller than any two pixels in the comparison pixel group with the high-sensitivity pattern RGWB, so the pixel group 140
  • the overall exposure time of the pixel group may be longer than the overall exposure time of the comparison pixel group to increase the data amount of red data, green data or blue data.
  • the photosensitive ability of the pixel 110 is better than that of the red pixel R, the green pixel G, or the blue pixel B, so that the photosensitive ability under low light can be improved.
  • FIGS. 2, 3A, 3B, 4, and 5 Particular patterns of pixel groups 140 are illustrated in the embodiments of FIGS. 2, 3A, 3B, 4, and 5, wherein the number of clear sub-pixels c (shown in FIG. 2) of pixel 110 of FIG. 2 is less than that of FIG. 3A and 3B, which are again less than FIG. 4 .
  • the specific pattern of FIG. 5 can be applied in phase detection autofocus, which is described in detail below.
  • the pattern design of the pixel group 140 determines the selection of the aforementioned signal combination.
  • different signal combinations can be formed by arbitrarily adjusting the relative timings of the trigger potentials of each of the control signals TG1 , TG2 , TG3 , and TG4 and the reset signal RST.
  • the pixel circuit 114 can provide column output signals representing different physical meanings.
  • the pattern design of any one of FIGS. 2 and 4 can be operated using the signal combination of FIGS. 6A, 6B, 8A or 8B, and the pattern design of FIG. 3B can be operated using the signal combination of FIGS. 7 or 9 Operation, the pattern design of FIG. 5 can be operated using the signal combination of FIG. 10 , wherein the signal combination used for the pattern design of FIG. 3A is similar to the signal combination of FIG. 7 or FIG. 9 and will not be repeated here.
  • the column output signal output by the pixel circuit 114 can provide the standard red, green and blue data required for the Bayer pattern, as well as to enhance the outline of the image generated by the image processor 50 information. It should be noted that the sub-pixels 112_1 to 112_4 are continuously exposed on the entire time axis in FIGS. 6A to 10 .
  • FIG. 2 is a schematic diagram of an embodiment of the pixel group 140 of the present application. 2, in order to distinguish from the red pixel R, the green pixel G, the blue pixel B, the clear pixel C, the white pixel W and the yellow pixel Y, the red sub-pixel is marked as r, the green sub-pixel is marked as g, and the blue sub-pixel is marked as g. Labeled b, clear subpixels are labeled c, white subpixels are labeled w, and yellow subpixels are labeled y.
  • the red sub-pixel r, green sub-pixel g, and blue sub-pixel b are used in the same way as the red pixel R, green pixel G, and blue pixel B, and are used to provide the standard red data, green data and blue data.
  • the clear sub-pixel c is not one of the red sub-pixel r, the green sub-pixel g, and the blue sub-pixel b.
  • the clear sub-pixel c can absorb at least two or more kinds of light in red, green and blue. Accordingly, the light-sensing ability of the clear sub-pixel c is better than that of the red sub-pixel r, the green sub-pixel g, and the blue sub-pixel b.
  • the clear subpixel c may be a white subpixel w, a yellow subpixel y, a cyan subpixel, or a magenta subpixel.
  • each of the pixels 110_1 to 110_4 includes a clear sub-pixel c.
  • the upper left corner is a red subpixel r
  • the upper right corner is a red subpixel r
  • the lower left corner is a red subpixel r
  • the lower right corner is a clear subpixel c, which respectively correspond to the subpixels in FIG. 1 .
  • pixel 110_1 may be referred to as modified red pixel R'.
  • pixels 110_2 and 110_3 may be referred to as modified green pixel G'
  • pixel 110_4 may be referred to as modified blue pixel B'.
  • two modified green pixels G' are arranged diagonally
  • one modified red pixel R' and one modified blue pixel B' are arranged diagonally.
  • the photosensitive ability is further described quantitatively as shown in Tables 1 and 2.
  • Tables 1 to 2 exemplarily illustrate the difference between the present embodiment and the existing high-sensitivity pattern RGWB in terms of the balance of photosensitivity.
  • the pixels of the comparative pixel group with the high-sensitivity pattern RGWB also use four - Realized by sharing the pixel structure.
  • the red pixel R is composed of four red sub-pixels r, and the remaining green pixels G, blue pixels B, white pixels W and so on.
  • the light-sensing ability of the blue sub-pixel b is taken as a reference, and the light-sensing value of the blue sub-pixel b is set to 1.
  • the photosensitive value of the red sub-pixel r is 1.12
  • the photosensitive value of the green sub-pixel g is 1.4
  • the photosensitive value of the yellow sub-pixel y is 2
  • the photosensitive value of the white sub-pixel w is 2. is 3.08.
  • Table 1 is used to exemplarily illustrate the average light-sensing value of the pixel group 140 in FIG. 2 .
  • Table 2 is used to exemplarily illustrate the average photosensitive value of the comparative pixel group with the high photosensitive pattern RGWB.
  • each pixel of the comparison pixel group is composed of sub-pixels of the same color. Therefore, the average photosensitive values of the red pixel R, green pixel G, blue pixel B, and white pixel W are the photosensitive values of the respective red subpixel r, green subpixel g, blue subpixel b, and white subpixel w, respectively.
  • FIG. 3A is a schematic diagram of another embodiment of the pixel group 140 of the present application.
  • the pixel group 140 of FIG. 3A is similar to the pixel group 140 of FIG. 2 , the difference is that the number of clear sub-pixels c of a single pixel 110 of FIG. 3A is two and arranged diagonally.
  • the clear sub-pixel c is a white sub-pixel w.
  • Table 3 is used to exemplarily illustrate the average light-sensing value of the pixel group 140 in FIG. 3A .
  • the two clear sub-pixels c are disposed at the upper left and the lower right of each pixel 110, respectively.
  • the present disclosure is not limited thereto.
  • the two clear sub-pixels c may be disposed at the upper right and the lower left of each pixel 110, respectively.
  • the pixel group 140 may be formed by any arrangement and combination of the foregoing two manners of disposing the clear sub-pixels c.
  • FIG. 3B is a schematic diagram of yet another embodiment of the pixel group 140 of the present application.
  • the pixel group 140 of FIG. 3B is similar to the pixel group 140 of FIG. 3A , the difference is that the two clear sub-pixels c of FIG. 3B are arranged adjacently.
  • the pixel group 140 can be formed by arbitrarily arranging and combining the arrangement manner of the clear sub-pixels c in FIG. 3B and the arrangement manner of the clear sub-pixels c in FIG. 3A .
  • FIG. 4 is a schematic diagram of still another embodiment of the pixel group 140 of the present application.
  • the pixel group 140 of FIG. 4 is similar to the pixel group 140 of FIG. 3B , the difference is that the number of clear sub-pixels c of a single pixel 110 of FIG. 4 is three.
  • the clear sub-pixel c is a white sub-pixel w.
  • Table 4 is used to exemplarily illustrate the average light-sensing value of the pixel group 140 in FIG. 4 .
  • the red sub-pixel r, the green sub-pixel g or the blue sub-pixel b are disposed at the lower right corner of the respective pixel 110 .
  • the present disclosure is not limited thereto, and the red sub-pixel r, the green sub-pixel g or the blue sub-pixel b may be disposed at the upper left corner, the lower left corner, or the upper right corner of the respective pixel 110 .
  • the red sub-pixel r, the green sub-pixel g or the blue sub-pixel b are all disposed at the lower right corner of each pixel 110 .
  • the red sub-pixel r, the green sub-pixel g or the blue sub-pixel b may be disposed at different positions of the respective pixels 110 .
  • the red sub-pixel r is arranged in the upper left corner of the pixel 110_1
  • the green sub-pixel g is arranged in the upper right corner of the pixel 110_2.
  • FIG. 5 is a schematic diagram of still another embodiment of the pixel group 140 of the present application.
  • the pixel group 140 of FIG. 5 is similar to the pixel group 140 of FIG. 2 , except that the clear sub-pixel c of the pixel 110_1 and the green sub-pixel g of the pixel 110_2 further form a phase pixel pair.
  • the clear sub-pixel c of the pixel 110_1 shares the elliptical microlens 162 with the green sub-pixel g of the pixel 110_2.
  • any two types of sub-pixels 110 may form a phase pixel pair.
  • phase pixel pairs can also be set by analogy.
  • FIGS. 6A-10 will illustrate the details of the standard red, green, and blue data required by the pixel group 140 of FIGS. 2-5 to provide the Bayer pattern, as well as to enhance the contours of the image produced by the image processor 50 details of the information.
  • the pixel 110_1 of the pixel group 140 will be taken as an example, and the remaining pixels 110_2 to 110_4 operate in the same manner.
  • the signals shown in FIG. 6A are used to control the pixel group 140 of FIG. 2 .
  • the control signals TG1 to TG4 and the reset signal RST are pulled to a high level.
  • the transmission gates 116_1 , 116_2 , 116_3 , and 116_4 and the reset gate 117 are positive edge-triggered elements.
  • the transfer gates 116_1 , 116_2 , 116_3 and 116_4 and the reset gate 117 are turned on to reset the sub-pixels 112_1 , 112_2 , 112_3 and 112_4 and reset the floating diffusion node FD.
  • the voltage of the floating diffusion node FD is the reference voltage VDD.
  • the reset signal RST is pulled to a high level again to reset the floating diffusion node FD again.
  • the voltage of the floating diffusion node FD is the reference voltage VDD.
  • the control signal generating circuit 120 generates a control signal TG4 according to the exposure time T1 of the clear sub-pixel c (corresponding to the sub-pixel 112_4 in FIG. 1 ) in the lower right corner, and pulls the control signal TG4 to a high level, so that the The charge generated by the clear sub-pixel c in the lower right corner is transferred to the floating diffusion node FD.
  • the voltage of the floating diffusion node FD drops from the reference voltage VDD to a voltage (VDD-VQ4), where VQ4 is the voltage drop caused by the charges generated by the clear sub-pixel c.
  • the row selection gate 119 is turned on, for example, in response to the high level of the row selection signal SEL, and the pixel circuit 114 outputs a column output signal based on the voltage (VDD-VQ4), which is used to improve the contour information of the image generated by the image processor 50 . It should be noted that the charges generated by the clear sub-pixel c still remain in the floating diffusion node FD without being cleared.
  • the control signal generating circuit 120 generates the control signals TG1 to TG3 according to the exposure time T2 of the red sub-pixel r and pulls the control signals TG1 to TG3 to a high level, so that the upper left, upper right and lower left three
  • the charges generated by the red sub-pixel r (corresponding to the sub-pixels 112_1 to 112_3 in FIG. 1 ) are transferred to the floating diffusion node FD and accumulated with the charges generated by the clear sub-pixel c.
  • the voltage of the floating diffusion node FD drops again to [VDD-(VQ1+VQ2+VQ3+VQ4)].
  • the row selection gate 119 is turned on, and the pixel circuit 114 outputs the column output signal based on the voltage [VDD-(VQ1+VQ2+VQ3+VQ4)].
  • the image processor 50 by subtracting the column output signal output at time point t3 and the column output signal output at time point t4 by the image processor 50, the combined and accumulated charge data of the three red sub-pixels r (ie VQ2+ VQ3+VQ4), which is the standard red data required for the Bayer pattern.
  • the exposure time T2 is greater than the overall exposure time used for the comparative pixel group having the high-sensitivity pattern RGWB. Therefore, the standard red data, green data and blue data collected by the pixel group 140 are more abundant than the comparison pixel group with the high-sensitivity pattern RGWB, so that the red data, green data and blue data have better signal-to-noise ratio.
  • the column output signal related to the charge of the clear sub-pixel c is output first.
  • the present disclosure is not limited thereto.
  • the column output signal for the combined accumulated charges of the three red sub-pixels r is output first.
  • the principle of the operation according to the signal of FIG. 6B is the same as that of FIG. 6A , and will not be repeated here.
  • the signals shown in FIG. 7 are used to control the pixel group 140 of FIG. 3B.
  • the pixel groups 140 in FIG. 3A and FIG. 3B have the same number of clear sub-pixels c, so as long as the time when the control signals TG1 to TG4 are pulled to a high level is adjusted adaptively, a similar operation method can be performed. The operation is not repeated here.
  • the voltage of the floating diffusion node FD drops from the reference voltage VDD to the voltage [VDD-(VQ3+VQ4)], where VQ3 and VQ4 are two The voltage drop caused by the charges generated by the clear sub-pixel c.
  • the pixel circuit 114 outputs a column output signal regarding the combined and accumulated charge data of the two clear sub-pixels c.
  • the charges generated by the exposure of the two red sub-pixels r on the upper left and the upper right are transferred to the floating diffusion node FD, and the charges generated by the two clear sub-pixels c are combined and accumulated.
  • the voltage of the floating diffusion node FD drops to a voltage [VDD-(VQ1+VQ2+VQ3+VQ4)], where VQ1 and VQ2 are the voltage drops caused by the charges generated by the two red sub-pixels r respectively.
  • the pixel circuit 114 outputs the column output signal based on the voltage [VDD-(VQ1+VQ2+VQ3+VQ4)].
  • the charge data (ie, VQ1+VQ2) accumulated by the two red sub-pixels r can be calculated.
  • the column output signal related to the charge of the clear sub-pixel c is output first.
  • the present disclosure is not limited thereto.
  • the column output signal regarding the charge of the red sub-pixel r may also be output first.
  • the operation mode of combining accumulated charges is not adopted. Therefore, it is not necessary to use mathematical operations to calculate the charge data of, for example, the red sub-pixel r and the clear sub-pixel c.
  • the signals shown in FIG. 8A are used to control the pixel group 140 of FIG. 2 .
  • the operations before the time point t3 are the same as those in FIG. 6A , which will not be repeated here.
  • the reset signal RST is pulled to a high level to turn on the reset gate 117, and the charges of the clear sub-pixel c collected by the floating diffusion node FD in response to the control signal TG4 are cleared.
  • the floating diffusion node FD is reset from the voltage (VDD-VQ4) to the reference voltage VDD.
  • the control signal generating circuit 120 generates control signals TG1 to TG3 according to the exposure time T2 of the upper left, upper right and lower left red sub-pixels r, and pulls the control signals TG1 to TG3 to a high level, so that the three The charges generated by the red sub-pixels r are transferred to the floating diffusion node FD for integration and accumulation.
  • the floating diffusion node FD drops from the reference voltage VDD to [VDD-(VQ1+VQ2+VQ3)].
  • the row selection gate 119 is turned on, and the pixel circuit 114 outputs the column output signal based on the voltage [VDD-(VQ1+VQ2+VQ3)].
  • the column output signal related to the charge of the clear sub-pixel c is output first.
  • the present disclosure is not limited thereto.
  • the column output signal related to the charge of the red sub-pixel r is output first.
  • the principle of operation according to the signal of FIG. 8B is the same as that of FIG. 8A , and details are not repeated here.
  • the signals shown in FIG. 9 are used to control the pixel group 140 of FIG. 3B.
  • the voltage of the floating diffusion node FD drops from the reference voltage VDD to a voltage [VDD-(VQ3+VQ4)], where VQ3 and VQ4 are respectively The voltage drop caused by the charges generated by the two clear sub-pixels c.
  • the pixel circuit 114 outputs a column output signal regarding the combined accumulated charges of the two clear sub-pixels c.
  • the combined accumulated charges of the two clear sub-pixels c at the floating diffusion node FD are cleared, and the floating diffusion node FD is reset to the reference voltage VDD.
  • the voltage of the floating diffusion node FD drops from the reference voltage VDD to a voltage [VDD-(VQ1+VQ2)], where VQ1 and VQ2 are the two red sub-pixels respectively The voltage drop caused by the charge generated by the pixel r.
  • the pixel circuit 114 outputs the column output signal based on the voltage [VDD-(VQ1+VQ2)].
  • the column output signal related to the charge of the clear sub-pixel c is output first.
  • the present disclosure is not limited thereto.
  • the column output signal regarding the charge of the red sub-pixel r may also be output first.
  • the signals shown in FIG. 10 are used to control the pixel group 140 of FIG. 5 .
  • the clear sub-pixel c and the green sub-pixel g forming the phase detection pixel pair are located in two different sub-pixels 110_1 and 110_2 . Accordingly, at least the two sub-pixels 110_1 and 110_2 need to perform operations according to the signals in FIG. 10 to obtain two phase detection data required by the phase detection auto-focus function, which are respectively described below.
  • the control signal generating circuit 120 generates the control signal TG3 according to the exposure time T2 of the red sub-pixel r in the lower left corner and pulls the control signal TG3 to a high level, so that the charges generated by the red sub-pixel r and the floating
  • the diffusion node FD collects the charges of the clear sub-pixel c collected in response to the control signal TG4 by combining and accumulating.
  • the voltage of the floating diffusion node FD drops from the voltage (VDD-VQ4) to the voltage [VDD-(VQ3+VQ4)], where VQ3 and VQ4 is the voltage drop caused by the charges generated by the red sub-pixel r and the clear sub-pixel c, respectively.
  • the pixel circuit 114 outputs the column output signal based on the voltage [VDD-(VQ3+VQ4)].
  • the control signal generating circuit 120 generates control signals TG1 and TG2 according to the exposure time T3 of the red sub-pixel r in the upper left and upper right corners, and pulls the control signals TG1 and TG2 to a high level, so that the upper left
  • the charges generated by the red sub-pixels r in the corner and the upper right corner are combined and accumulated again with the combined accumulated charges on the floating diffusion node FD.
  • the voltage of the floating diffusion node FD drops from the voltage [VDD-(VQ3+VQ4)] to the voltage [VDD-(VQ1+VQ2+VQ3+VQ4)], where VQ1 and VQ2 is the voltage drop caused by the charges generated by the red sub-pixel r in the upper left corner and the upper right corner, respectively.
  • the pixel circuit 114 outputs the column output signal based on the voltage [VDD-(VQ1+VQ2+VQ3+VQ4)].
  • the exposure time difference between the exposure times T2 and T3 is shown in an exaggerated manner in FIG. 10 , and in some embodiments, the exposure time difference is not significant. This means that VQ1 and VQ2 are similar to VQ3.
  • the image processor 50 can determine the charge data of the first phase detection pixel (ie, the clear sub-pixel c of the pixel 110_1 ) based on the column output signal at the time point T3 . Next, the image processor 50 performs mathematical operations on the column output signals at the time points T3 , T4 and T5 to calculate the combined and accumulated charge data of the three red sub-pixels r.
  • VQ4 at time point t3 is the voltage drop caused by the charge generated by the clear sub-pixel c, but the clear sub-pixel c in the pixel 110_2 is not used as a phase detection pixel, so VQ4 cannot be used as a phase detection pixel. Pixel charge data.
  • the control signal TG3 is pulled to a high level, so that the charges generated by the green sub-pixel g (ie, the second phase detection pixel) in the lower left corner and the floating diffusion node FD are clearly collected in response to the control signal TG4
  • the charge of the sub-pixel c is combined and accumulated.
  • the pixel circuit 114 outputs the column output signal based on the voltage [VDD-(VQ3+VQ4)], where VQ3 and VQ4 are the voltage drop caused by the charges generated by the green sub-pixel g and the clear sub-pixel c in the lower left corner, respectively.
  • the operation of the pixel 110_2 at the remaining time points is the same as that of the pixel 110_1.
  • the image processor 50 performs mathematical operations on the column output signals at the time points T3 , T4 and T5 to calculate the combined and accumulated charge data of the three green sub-pixels g.
  • the image processor 50 can calculate the charge data of the green sub-pixel g (ie, the second phase detection pixel) in the lower left corner by performing mathematical operations based on the column output signals at the time points T3 and T4. Obtain the charge data of the second phase detection pixel.
  • the image processor 50 can complete the phase detection auto-focusing function based on the charge data of the clear sub-pixel c at the lower right corner of the pixel 110_1 and the green sub-pixel g at the lower left corner of the pixel 110_2.
  • the signals shown in FIG. 10 are for illustration only. For various pixel group patterns, as long as the signals of the charge data of the phase detection pixels are obtained by combining accumulation and mathematical operations, they all fall into the scope of the present application.
  • FIG. 11 is a schematic diagram of an embodiment in which the image processor 50 and the image sensor 100 shown in FIG. 1 are applied to the electronic device 60 .
  • the electronic device 60 may be any electronic device such as a smart phone, a personal digital assistant, a handheld computer system, or a tablet computer.

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Abstract

本申请公开了一种图像传感器以及相关电子装置。所述图像传感器，耦接于图像处理器，所述图像处理器基于所述图像传感器提供的感测数据建立图像，所述图像传感器包括：像素阵列，包括：第一浮动扩散节点；以及第一像素(110_1)，包括第一子像素(r)及第二子像素(c)，共享所述第一浮动扩散节点，所述第一子像素为红色子像素、绿色子像素及蓝色子像素的其中之一，其中所述第二子像素不为红色子像素、绿色子像素及蓝色子像素的其中之一，且所述第一浮动扩散节点设置于所述第一子像素和所述第二子像素之间。

Description

图像传感器以及相关电子装置 技术领域
本申请涉及一种传感器，尤其涉及一种图像传感器以及相关电子装置。
背景技术
图像传感器已经得到大规模生产和应用。在评估图像传感器的效能时，通常至少会考虑到图像传感器在低光照下的感光能力以及信噪比的高低。因此，需要一种创新设计来改善图像传感器在低光照下的感光能力并且同时改善图像传感器的信噪比。
发明内容
本申请的目的之一在于公开一种传感器，尤其涉及一种图像传感器以及相关电子装置，来解决上述问题。
本申请的一实施例公开了一种图像传感器，耦接于图像处理器，所述图像处理器基于所述图像传感器提供的感测数据建立图像，所述图像传感器包括：像素阵列，包括：第一浮动扩散节点；以及第一像素，包括第一子像素及第二子像素，共享所述第一浮动扩散节点，所述第一子像素为红色子像素、绿色子像素及蓝色子像素的其中之一，其中所述第二子像素不为红色子像素、绿色子像素及蓝色子像素的其中之一，且所述第一浮动扩散节点设置于所述第一子像素和所述第二子像素之间。
本申请的一实施例公开了一种电子装置。所述电子装置包括前 述的图像处理器以及图像传感器。
本申请所公开的图像传感器对四拜尔图案进一步改良，以降低多个像素之间在感光能力上的差异程度，来增加曝光时间，进而改善红色数据、绿色数据或蓝色数据的信噪比。此外，所述多个像素各自具有强感光能力的子像素，例如白色子像素，因此图像传感器在低光照下的感光能力也能够得到改善。
附图说明
图1为本申请的图像传感器的实施例的示意图。
图2为本申请的像素组的实施例的示意图。
图3A为本申请的像素组的另一实施例的示意图。
图3B为本申请的像素组的又一实施例的示意图。
图4为本申请的像素组的再一实施例的示意图。
图5为本申请的像素组的又再一实施例的示意图。
图6A为本申请的信号的实施例的时序图。
图6B为本申请的信号的另一实施例的时序图。
图7为本申请的信号的又一实施例的时序图。
图8A为本申请的信号的再一实施例的时序图。
图8B为本申请的信号的又再一实施例的时序图。
图9为本申请的信号的又再另一实施例的时序图。
图10为本申请的信号的又再更另一实施例的时序图。
图11为图1所示的所述图像处理器及图像传感器应用在电子装置的实施例的示意图。
具体实施方式
以下揭示内容提供了多种实施方式或例示，其能用以实现本揭示内容的不同特征。下文所述之组件与配置的具体例子系用以简化本揭示内容。当可想见，这些叙述仅为例示，其本意并非用于限制本揭示内容。举例来说，在下文的描述中，将一第一特征形成于一第二特征上或之上，可能包括某些实施例其中所述的第一与第二特征彼此直接接触；且也可能包括某些实施例其中还有额外的组件形成于上述第一与第二特征之间，而使得第一与第二特征可能没有直接接触。此外，本揭示内容可能会在多个实施例中重复使用组件符号和/或标号。此种重复使用乃是基于简洁与清楚的目的，且其本身不代表所讨论的不同实施例和/或组态之间的关系。
再者，在此处使用空间上相对的词汇，譬如「之下」、「下方」、「低于」、「之上」、「上方」及与其相似者，可能是为了方便说明图中所绘示的一组件或特征相对于另一或多个组件或特征之间的关系。这些空间上相对的词汇其本意除了图中所绘示的方位之外，还涵盖了装置在使用或操作中所处的多种不同方位。可能将所述设备放置于其他方位(如，旋转90度或处于其他方位)，而这些空间上相对的描述词汇就应该做相应的解释。
虽然用以界定本申请较广范围的数值范围与参数皆是约略的数值，此处已尽可能精确地呈现具体实施例中的相关数值。然而，任何数值本质上不可避免地含有因个别测试方法所致的标准偏差。在此处，「相同」通常系指实际数值在一特定数值或范围的正负10％、5％、1％或0.5％之内。或者是，「相同」一词代表实际数值落在平均值的可接受标准误差之内，视本申请所属技术领域中具有通常知识者的考虑而定。当可理解，除了实验例之外，或除非另有明确的说明，此处所用的所有范围、数量、数值与百分比(例如用以描述材料用量、时间长短、温度、操作条件、数量比例及其他相似者)均经过「相同」的修饰。因此，除非另有相反的说明，本说明书与附随申请专利范围所揭示的数值参数皆为约略的数值，且可视需求而更动。至少应将这些数值参数理解为所指出的有效位数与套用一般 进位法所得到的数值。在此处，将数值范围表示成由一端点至另一端点或介于二端点之间；除非另有说明，此处所述的数值范围皆包括端点。
现有的像素组多以拜尔图案构成，例如由一个红色像素(R)、二个绿色像素(G)及一个蓝色像素(B)组成，简称RGGB。
此外，近来为了提升低光照下的感光能力，又将拜尔图案中的至少其中之一像素以清晰像素C(clear pixel)取代，并衍生出其他的改良图案来实现像素组。此处的清晰像素C的感光能力高于拜尔图案中的每一像素，例如清晰像素C可以是白色像素(W)或黄色像素(Y)。衍生出的改良图案可以是由一个红色像素、二个黄色像素(Y)及一个蓝色像素构成，简称为RYYB，或者例如由一个红色像素、一个绿色像素、一个白色像素(W)及一个蓝色像素构成，简称RGWB。
除上述改变像素组的图案以外，近来为了提升能够使用灵活度让使用者能够在高解析度及高信噪比之间做选择，像素组中的每一像素又被分为多个同色子像素共用浮动扩散节点，例如四个子像素。
如前所述，由于清晰像素C的感光能力较强，为了避免过曝，上述的其他改良图案的整体曝光时间的决定会受限于避免使清晰像素C过曝。然而，红色像素、绿色像素或蓝色像素的感光能力大约只有清晰像素C的二分之一或更小，因此，若红色像素、绿色像素或蓝色像素根据清晰像素C的曝光时间进行曝光，像素组所能够获得的红色数据、绿色数据或蓝色数据会大幅减少，进而导致红色数据、绿色数据或蓝色数据的信噪比不佳。
本申请为了解决上述问题，将清晰像素C中的多个清晰子像素打散到同一像素组中的红色像素R、绿色像素G及蓝色像素B之中，以降低像素组中的每一像素之间的感光能力差值，因此能够达到改善在低光照下的感光能力，同时提升红色数据、绿色数据或蓝色数据的数据量，其细节说明如下。
图1为本申请的耦接于图像处理器50的图像传感器100的实施例的示意图，其中图像处理器50基于图像传感器100提供的感测数据建立图像。参照图1，图像传感器100包括由多个像素110构成的像素阵列(未图示)及控制信号产生电路120。为了图示简洁，图1中仅绘示出一个像素110。
像素110包括多个子像素112及像素电路114，其中多个子像素112包括子像素112_1至112_n，其中n为大于1的正整数，在本实施例中，以n＝4具体展开描述，亦即，像素110包括四个子像素112。子像素112_1至112_4共享相同的浮动扩散节点FD，而浮动扩散节点FD在电路布图上可位于子像素112_1至112_4之间。也就是说，像素110具有四-共用像素(four shared)结构。
在一些实施例中，子像素112包括光电二极管PD及微透镜160(如图2所示)。微透镜160用以将进入子像素112的光聚焦至光电二极管PD上，而光电二极管PD用以将光信号转换成电信号。光电二极管PD可以是以电子为主要载子的光电二极管，或是以电洞为主要载子的光电二极管。此外，需注意的是，光电二极管PD意在涵盖基本上任何类型的光子或光检测元件，例如光门或其他光敏区。
像素电路114用以选择性地耦接至子像素112_1至112_4，并且选择性地输出关于子像素112_1至112_4产生的电荷的列输出信号至图像处理器50，亦即所述列输出信号包括图像传感器100提供的感测数据。像素电路114包括传输门116_1、116_2、116_3及116_4、复位门117、源极追随器118、行选择门119及电容器120。
传输门116_1、116_2、116_3及116_4分别受控于控制信号产生电路120提供的控制信号TG1、TG2、TG3及TG4以选择性地将各自对应的子像素112_1至112_4产生的电荷转移至浮动扩散节点FD。接着，通过耦接于浮动扩散节点FD与参考电压190之间的电容器120，电荷带来的电能储存在电容器120中以在浮动扩散节点FD建立初始感测电压。初始感测电压被耦接于参考电压VDD的源 极追随器118放大，并于源极追随器118的漏极输出放大感测电压。行选择门119受控于行选择器(未图示)提供的行选择信号SEL以选择性地将放大感测电压输出为列输出信号至图像处理器50。图像处理器50基于所述列输出信号建立图像。复位门117受控于控制信号产生电路120提供的复位信号RST以选择性地使用参考电压VDD清除浮动扩散节点FD上的电荷。
多个像素110可构成单个像素组140(如图2所示)，并且可通过重复设置所述像素组来形成所述像素阵列。在本实施例中，是由四个像素110(亦即，如图2所示的110_1、110_2、110_3及110_4)构成单个像素组140。
本发明的像素组140具有特定的图案，使得同个像素组140中任两像素110之间的感光能力的差值比具高感光图案RGWB的比较像素组的任两像素小，因此像素组140的整体曝光时间可以比所述比较像素组的整体曝光时间长以提升红色数据、绿色数据或蓝色数据的数据量。此外，像素110的感光能力优于红色像素R、绿色像素G，或蓝色像素B，因此能够达到改善在低光照下的感光能力。
像素组140的特定图案说明于图2、图3A、图3B、图4及图5的实施例中，其中图2的像素110的清晰子像素c(如图2所示)的数量少于图3A及图3B，其再少于图4。图5的特定图案可应用于相位检测自动对焦中，其详细说明如下。
像素组140的图案设计决定前述的信号组合的选择。针对不同的像素组140的图案设计，可以通过任意调整控制信号TG1、TG2、TG3及TG4及复位信号RST每一者的触发电位的相对时序，以组合成不同的信号组合。因应于不同的信号组合，像素电路114可提供代表不同物理意义的列输出信号。进一步来说，图2及图4任一者的图案设计可使用图6A、图6B、图8A或图8B的信号组合来操作，图3B的图案设计可使用图7或图9的信号组合来操作，图5的图案设计可使用图10的信号组合来操作，其中用于图3A的图案 设计的信号组合类似于图7或图9的信号组合，于此不再赘述。
总的来说，在本发明中，像素电路114输出的列输出信号能够提供拜尔图案所需要的标准红色数据、绿色数据及蓝色数据，以及用以提升图像处理器50产生的图像的轮廓信息。需注意的是，在图6A至图10中的整个时间轴上，子像素112_1至112_4持续地被曝光。
图2为本申请的像素组140的实施例的示意图。参照图2，为了与红色像素R、绿色像素G、蓝色像素B、清晰像素C、白色像素W及黄色像素Y区别，红色子像素标记为r、绿色子像素标记为g、蓝色子像素标记为b、清晰子像素标记为c、白色子像素标记为w以及黄色子像素标记为y。
红色子像素r、绿色子像素g、蓝色子像素b的用途与红色像素R、绿色像素G、蓝色像素B相同，是分别用以提供拜尔图案所需要的标准红色数据、绿色数据及蓝色数据。
为了增加在低光照下的感光能力，在像素组140中设置清晰子像素c。清晰子像素c不为红色子像素r、绿色子像素g及蓝色子像素b的其中之一。清晰子像素c能够吸收红色、绿色及蓝色中至少两种以上的光，据此，清晰子像素c的感光能力优于红色子像素r、绿色子像素g及蓝色子像素b，而可用以提升图像处理器50产生的图像的轮廓信息。在一些实施例中，清晰子像素c可以是白色子像素w、黄色子像素y、青色子像素，或紫红色子像素。
为了通过改善像素110_1、110_2、110_3及110_4之间感光能力不平衡的程度来改善信噪比，进一步于像素110_1至110_4每一者中均设置清晰子像素c并且像素110_1至110_4包括相同数量的清晰子像素c。在本实施例中，像素110_1至110_4各包括一个清晰子像素c。
以像素110_1为例，在像素110_1中，左上角为红色子像素r、右上角为红色子像素r、左下角为红色子像素r及右下角为清晰子像 素c，其分别对应图1的子像素112_1、112_2、112_3及112_4。其余像素110_2、110_3及110_4依此类推。据此，于适当处，像素110_1可称为修改后红色像素R'。同理，像素110_2及110_3可称为修改后绿色像素G'，以及像素110_4可称为修改后蓝色像素B'。在图2的像素组140中，二个修改后绿色像素G'以对角设置，以及一个修改后红色像素R'与一个修改后蓝色像素B'以对角设置。
为了更佳地理解图2的像素组140的图案能够改善像素110_1、110_2、110_3及110_4之间感光能力不平衡的程度，进一步将感光能力进行定量描述如表一及表二所示。
表一至表二示范性地说明本实施例与现有的高感光图案RGWB在感光能力平衡上的区别，其中为了与像素110的结构对齐，具有高感光图案RGWB的比较像素组的像素也使用四-共用像素结构来实现。举例来说，在高感光图案RGWB中，红色像素R是由四个红色子像素r构成，而其余的绿色像素G、蓝色像素B、白色像素W依此类推。
为了易于理解,将蓝色子像素b的感光能力作为参考，并且将蓝色子像素b的感光值设定为1。相较于蓝色子像素b的感光能力，红色子像素r的感光值为1.12，绿色子像素g的感光值为1.4，黄色子像素y的感光值为2，以及白色子像素w的感光值为3.08。
表一用于示范性的说明图2的像素组140的平均感光值。
Figure PCTCN2020101880-appb-000001
表一
由表一可观察出，像素110_3及110_4之间的平均感光值的差值的绝对值为最大，即0.3，以及像素110_2及110_3之间的平均感光值的差值的绝对值为最小，即0。
表二用于示范性地说明具有高感光图案RGWB的比较像素组的平均感光值。承如上述，由于比较像素组的每一像素是由相同颜色的子像素构成。因此，红色像素R、绿色像素G、蓝色像素B及白色像素W的平均感光值分别就是各自的红色子像素r、绿色子像素g、蓝色子像素b及白色子像素w的感光值。
Figure PCTCN2020101880-appb-000002
表二
由表二可观察出，任两平均感光值之间的差值的绝对值的最大值及最小值分别为2.08及0.12。
比对表一及表二可知，像素组140的平均感光值的差值的绝对值的最大值小于具有高感光图案RGWB的比较像素组，这意味着，像素组140的感光能力不平衡的程度获得改善。这也意味着，像素组140不存在特定像素(例如白色像素W)，其感光能力显着地大于其他像素例如约二倍以上。因此，能够解除原本白色像素W引起的限制来增加曝光时间，进而改善红色数据、绿色数据或蓝色数据的信噪比。
图3A为本申请的像素组140的另一实施例的示意图。参照图3A，图3A的像素组140类似于图2的像素组140，差别在于，图3A的单个像素110的清晰子像素c的数量为二个，并以对角设置。在本实施例中，清晰子像素c为白色子像素w。表三用于示范性的说明图3A的像素组140的平均感光值。
Figure PCTCN2020101880-appb-000003
Figure PCTCN2020101880-appb-000004
表三
由表三可观察出，像素110_3及110_4之间的平均感光值的差值的绝对值为最大，即0.2。由比对表一及表三可知，图3A的像素组140的平均感光值的差值的绝对值的最大值也小于具有高感光图案RGWB的比较像素组。因此，能够解除原本白色像素W引起的限制来增加曝光时间，进而改善红色数据、绿色数据或蓝色数据的信噪比。
在本实施例中，二个清晰子像素c是分别设置在每一个像素110的左上及右下。然而，本揭露不限定于此。在一些实施例中，二个清晰子像素c可分别设置在每一个像素110的右上及左下。在另一些实施例中，可通过任意排列组合前述两种设置清晰子像素c的方式来形成像素组140。
图3B为本申请的像素组140的又一实施例的示意图。参照图3B，图3B的像素组140类似于图3A的像素组140，差别在于，图3B的二个清晰子像素c是相邻设置。在一些实施例中，可通过任意排列组合图3B的清晰子像素c的设置方式及图3A的清晰子像素c的设置方式来形成像素组140。
图4为本申请的像素组140的再一实施例的示意图。参照图4，图4的像素组140类似于图3B的像素组140，差别在于，图4的单个像素110的清晰子像素c的数量为三个。在本实施例中，清晰子像素c为白色子像素w。
表四用于示范性的说明图4的像素组140的平均感光值。
Figure PCTCN2020101880-appb-000005
Figure PCTCN2020101880-appb-000006
表四
由表四可观察出，像素110_3及110_4之间的平均感光值的差值的绝对值为最大，即0.1。由比对表一及表四可知，图4的像素组140的平均感光值的差值的绝对值的最大值小于具有高感光图案RGWB的比较像素组。因此，能够解除原本白色像素W引起的限制来增加曝光时间，进而改善红色数据、绿色数据或蓝色数据的信噪比。
在本实施例中，红色子像素r、绿色子像素g或蓝色子像素b是设置在各自的像素110的右下角。然而，本揭露不限定于此，红色子像素r、绿色子像素g或蓝色子像素b可设置在各自的像素110的左上角，左下角，或右上角。此外，在本实施例中，红色子像素r、绿色子像素g或蓝色子像素b均是设置在每一像素110的右下角。然而，本揭露不限定于此，红色子像素r、绿色子像素g或蓝色子像素b可设置在各自的像素110的不同位置。举例来说，红色子像素r设置在像素110_1的左上角，而绿色子像素g设置在110_2的右上角。
图5为本申请的像素组140的又再一实施例的示意图。参照图5，图5的像素组140类似于图2的像素组140，差别在于，像素110_1的清晰子像素c与像素110_2的绿色子像素g进一步构成相位像素对。像素110_1的清晰子像素c与像素110_2的绿色子像素g共享椭圆微透镜162。
在其他实施例中，可以由任意两种子像素110形成相位像素对。此外，在清晰子像素c的数量为二个或三个的实施例中，也可以依此类推设置相位像素对。
图6A至图10的实施例将说明图2至图5的像素组140提供拜尔图案所需要的标准红色数据、绿色数据及蓝色数据的细节，以及 提升图像处理器50产生的图像的轮廓信息的细节。为了简洁，在图6A至图9的实施例中，将以像素组140的像素110_1为例，其余像素110_2至110_4依照相同的方式操作。
参照图6A，图6A所示出的信号用于控制图2的像素组140。同时参照图2及图6A，初始，在时间点t1之前，控制信号TG1至TG4及复位信号RST被拉至高准位。在本实施例中，传输门116_1、116_2、116_3及116_4及复位门117为正缘触发的元件。因此，传输门116_1、116_2、116_3及116_4及复位门117导通以复位子像素112_1、112_2、112_3及112_4与复位浮动扩散节点FD。在时间点t1，浮动扩散节点FD的电压为参考电压VDD。
在时间点t1与t2之间，复位信号RST再次被拉至高准位以再次复位浮动扩散节点FD。在时间点t2，浮动扩散节点FD的电压为参考电压VDD。
在时间点t2与t3之间，控制信号产生电路120依据右下角的清晰子像素c(对应图1的子像素112_4)的曝光时间T1产生控制信号TG4并将控制信号TG4拉至高准位，使右下角的清晰子像素c产生的电荷转移至浮动扩散节点FD。在时间点t3，浮动扩散节点FD的电压从参考电压VDD降为电压(VDD-VQ4)，其中VQ4为清晰子像素c产生的电荷所造成的压降。此时，行选择门119例如因应于行选择信号SEL的高准位导通，像素电路114基于电压(VDD-VQ4)输出列输出信号，其用以提升图像处理器50产生的图像的轮廓信息。需注意的是，清晰子像素c产生的电荷仍然保留在浮动扩散节点FD未被清除。
在时间点t3与t4之间，控制信号产生电路120依据红色子像素r的曝光时间T2产生控制信号TG1至TG3并将控制信号TG1至TG3拉至高准位，使左上、右上、左下的三个红色子像素r(对应图1的子像素112_1至112_3)产生的电荷转移至浮动扩散节点FD与清晰子像素c产生的电荷合并累积。浮动扩散节点FD的电压再 降为[VDD-(VQ1+VQ2+VQ3+VQ4)]。此时，行选择门119导通，像素电路114基于电压[VDD-(VQ1+VQ2+VQ3+VQ4)]输出列输出信号。
举例来说，通过图像处理器50对时间点t3输出的列输出信号与时间点t4输出的列输出信号相减，即可计算出三个红色子像素r的合并累积的电荷数据(即VQ2+VQ3+VQ4)，其作为拜尔图案所需要的标准红色数据。
除此之外，曝光时间T2是大于具有高感光图案RGWB的比较像素组使用的整体曝光时间。因此，像素组140搜集到的标准红色数据、绿色数据及蓝色数据比具有高感光图案RGWB的比较像素组充足，而使红色数据、绿色数据及蓝色数据具有较佳的信噪比。
在图6A的实施例中，是先输出关于清晰子像素c的电荷的列输出信号。然而，本揭露不限定于此。在图6B的实施例中，是先输出关于三个红色子像素r的合并累积电荷的列输出信号。依据图6B的信号进行操作的原理与图6A雷同，于此不再赘述。
参照图7，图7所示出的信号用于控制图3B的像素组140。附带一提,图3A与图3B的像素组140具有相同数量的清晰子像素c，因此只要将控制信号TG1至TG4被拉至高准位的时间做适应性的调整，即可依据类似的操作方式进行操作，于此不再赘述。
在时间点t3，基于左下及右下二个清晰子像素c产生的电荷，浮动扩散节点FD的电压从参考电压VDD降为电压[VDD-(VQ3+VQ4)]，其中VQ3及VQ4分别为二个清晰子像素c产生的电荷所造成的压降。此时，像素电路114输出关于二个清晰子像素c的合并累积的电荷数据的列输出信号。
在时间点t4，左上及右上二个红色子像素r曝光产生的电荷转移至浮动扩散节点FD与二个清晰子像素c产生的电荷合并累积。浮动扩散节点FD的电压再降为电压[VDD-(VQ1+VQ2+VQ3+VQ4)]，其中VQ1及VQ2分别为二个红色子像素r产生的电荷所造成的压降。此时，像素电路114基于电压[VDD-(VQ1+VQ2+VQ3+VQ4)]输 出列输出信号。
举例来说，通过图像处理器50对时间点t3及t4输出的列输出信号相减，即可计算出二个红色子像素r合并累积的电荷数据(即VQ1+VQ2)。
在图7的实施例中，是先输出关于清晰子像素c的电荷的列输出信号。然而，本揭露不限定于此。在一些实施例中，也可以先输出关于红色子像素r的电荷的列输出信号。
在图8A、图8B及图9的实施例中，并不采用合并累积电荷的操作方式。因此，不需要使用数学运算来计算出例如红色子像素r及清晰子像素c的电荷数据。
参照图8A，图8A所示出的信号用于控制图2的像素组140。同时参照图2及图8A，在时间点t3以前的操作与图6A相同，于此不再赘述。在时间点t3与t4之间，复位信号RST被拉至高准位，使复位门117导通，浮动扩散节点FD因应于控制信号TG4搜集的清晰子像素c的电荷被清除。浮动扩散节点FD从电压(VDD-VQ4)复位为参考电压VDD。
在时间点t4与t5之间，控制信号产生电路120依据左上、右上及左下的红色子像素r的曝光时间T2产生控制信号TG1至TG3，并且将控制信号TG1至TG3拉至高准位，使三个红色子像素r产生的电荷转移至浮动扩散节点FD合并累积。浮动扩散节点FD从参考电压VDD降为[VDD-(VQ1+VQ2+VQ3)]。此时，行选择门119导通，像素电路114基于电压[VDD-(VQ1+VQ2+VQ3)]输出列输出信号。
简单来说，在图8A的实施例中，是先输出关于清晰子像素c的电荷的列输出信号。然而，本揭露不限定于此。举例来说，在图8B的实施例中，是先输出关于红色子像素r的电荷的列输出信号。依据图8B的信号进行操作的原理与图8A雷同，于此不再赘述。
参照图9，图9所示出的信号用于控制图3B的像素组140。在 时间点t3，基于左下及右下二个清晰子像素c的合并累积电荷，浮动扩散节点FD的电压从参考电压VDD降为电压[VDD-(VQ3+VQ4)]，其中VQ3及VQ4分别为二个清晰子像素c产生的电荷所造成的压降。此时，像素电路114输出关于二个清晰子像素c的合并累积电荷的列输出信号。在时间点t4，二个清晰子像素c在浮动扩散节点FD的合并累积电荷被清除，浮动扩散节点FD被复位为参考电压VDD。在时间点t5，基于二个红色子像素r的合并累积电荷，浮动扩散节点FD的电压从参考电压VDD降为电压[VDD-(VQ1+VQ2)]，其中VQ1及VQ2分别为二个红色子像素r产生的电荷所造成的压降。此时，像素电路114基于电压[VDD-(VQ1+VQ2)]输出列输出信号。
简单来说，在图9的实施例中，是先输出关于清晰子像素c的电荷的列输出信号。然而，本揭露不限定于此。在一些实施例中，也可以先输出关于红色子像素r的电荷的列输出信号。
参照图10，图10所示出的信号用于控制图5的像素组140。在图5中，组成相位检测像素对的清晰子像素c及绿色子像素g位于不同的二个子像素110_1及110_2中。据此，至少需要对二个子像素110_1及110_2依据图10的信号执行操作以得到相位检测自动对焦功能所需要的二笔相位检测资料，分别说明如下。
就像素110_1来说，同时参照图5及图10，在时间点t3以前的操作与图6A相同，于此不再赘述。在时间点t3与t4之间，控制信号产生电路120依据左下角的红色子像素r的曝光时间T2产生控制信号TG3并将控制信号TG3拉至高准位，使红色子像素r产生的电荷与浮动扩散节点FD因应控制信号TG4搜集的清晰子像素c的电荷合并累积。在时间点t4，基于清晰子像素c与红色子像素r的合并累积的电荷，浮动扩散节点FD的电压从电压(VDD-VQ4)降为电压[VDD-(VQ3+VQ4)]，其中VQ3及VQ4分别为红色子像素r及清晰子像素c产生的电荷所造成的压降。此时，像素电路114基于电压[VDD-(VQ3+VQ4)]输出列输出信号。
在时间点t4与t5之间，控制信号产生电路120依据左上角及右上角的红色子像素r的曝光时间T3产生控制信号TG1及TG2，并将控制信号TG1及TG2拉至高准位，使左上角及右上角的红色子像素r产生的电荷与浮动扩散节点FD上的合并累积电荷再次合并累积。在时间点t5，基于前述再次合并累积的电荷，浮动扩散节点FD的电压从电压[VDD-(VQ3+VQ4)]降为电压[VDD-(VQ1+VQ2+VQ3+VQ4)]，其中VQ1及VQ2分别为左上角及右上角的红色子像素r产生的电荷所造成的压降。此时，像素电路114基于电压[VDD-(VQ1+VQ2+VQ3+VQ4)]输出列输出信号。需注意的是，曝光时间T2与T3之间的曝光时间差在图10上被夸饰性的绘示，在一些实施例中，所述曝光时间差不显着。这意味着，VQ1及VQ2近似于VQ3。
举例来说，图像处理器50基于时间点T3的列输出信号就可判断出第一相位检测像素(即，像素110_1的清晰子像素c)的电荷数据。接着，图像处理器50对时间点T3、T4及T5的列输出信号进行数学运算就可计算出三个红色子像素r合并累积的电荷数据。
就像素110_2来说，同时参照图5及图10，在时间点t3以前的操作与图6A相同，于此不再赘述。需特别说明的是，在时间点t3的VQ4是清晰子像素c产生的电荷所造成的压降，但在像素110_2中的清晰子像素c不做为相位检测像素，因此VQ4不能做为相位检测像素的电荷数据。在时间点t3与t4之间，控制信号TG3被拉至高准位，使左下角的绿色子像素g(即，第二相位检测像素)产生的电荷与浮动扩散节点FD因应控制信号TG4搜集的清晰子像素c的电荷合并累积。据此，像素电路114基于电压[VDD-(VQ3+VQ4)]输出列输出信号，其中VQ3及VQ4分别为左下角的绿色子像素g及清晰子像素c产生的电荷所造成的压降。像素110_2在剩余时间点的操作与像素110_1雷同。接着，图像处理器50对时间点T3、T4及T5的列输出信号进行数学运算就可计算出三个绿色子像素g合并累积的电荷数据。
此外，举例来说，图像处理器50基于时间点T3及T4的列输出信号进行数学运算就可计算出左下角的绿色子像素g(亦即，第二相位检测像素)的电荷数据，藉此得到第二相位检测像素的电荷数据。接着，图像处理器50基于像素110_1的右下角的清晰子像素c及像素110_2左下角的绿色子像素g的电荷数据就可完成相位检测自动对焦功能。
图10示出的信号仅是作为一种释例。对于各种像素组图案，只要是通过合并累积以及数学运算获得相位检测像素的电荷数据的信号均落入本申请的范畴。
图11为图1所示的图像处理器50及图像传感器100应用在电子装置60的实施例的示意图。参照图6，电子装置60可为例如智能型手机、个人数字助理、手持式计算机系统或平板计算机等任何电子装置。
上文的叙述简要地提出了本申请某些实施例之特征，而使得本申请所属技术领域具有通常知识者能够更全面地理解本揭示内容的多种态样。本申请所属技术领域具有通常知识者当可明了，其可轻易地利用本揭示内容作为基础，来设计或更动其他工艺与结构，以实现与此处所述之实施方式相同的目的和/或达到相同的优点。本申请所属技术领域具有通常知识者应当明白，这些均等的实施方式仍属于本揭示内容之精神与范围，且其可进行各种变更、替代与更动，而不会悖离本揭示内容之精神与范围。

Claims (19)

  1. 一种图像传感器，耦接于图像处理器，所述图像处理器基于所述图像传感器提供的感测数据建立图像，所述图像传感器包括：
    像素阵列，包括：
    第一浮动扩散节点；以及
    第一像素，包括第一子像素及第二子像素，共享所述第一浮动扩散节点，所述第一子像素为红色子像素、绿色子像素及蓝色子像素的其中之一，其中所述第二子像素不为红色子像素、绿色子像素及蓝色子像素的其中之一，且所述第一浮动扩散节点设置于所述第一子像素和所述第二子像素之间。
  2. 如权利要求1所述的图像传感器，其中所述像素阵列另包括：
    第二浮动扩散节点；以及
    第二像素，包括第三子像素及第四子像素，共享所述第二浮动扩散节点，所述第三子像素为红色子像素、绿色子像素及蓝色子像素的其中之一，所述第三子像素的颜色不同于所述第一子像素，其中所述第四子像素不为红色子像素、绿色子像素及蓝色子像素的其中之一。
  3. 如权利要求2所述的图像传感器，其中所述第二子像素和所述第四子像素具有相同感光能力。
  4. 如权利要求3所述的图像传感器，其中所述第二子像素和所述第四子像素的感光能力优于红色子像素、绿色子像素或蓝色子像素。
  5. 如权利要求4所述的图像传感器，其中所述第一像素具有第一平均感光值，所述第二像素具有第二平均感光值，且第一平均感光值和第二平均感光值的差的绝对值小于红色子像素、绿色子像素及蓝色子像素任两者之间的感光值的差的绝对值。
  6. 如权利要求3所述的图像传感器，其中所述第二子像素及所述第 四子像素均为白色子像素。
  7. 如权利要求1所述的图像传感器，其中所述第二子像素的数量相同于所述第四子像素的数量。
  8. 如权利要求1所述的图像传感器，其中所述第一像素包括三个所述第一子像素及一个所述第二子像素以2*2设置，以及所述第二像素包括三个所述第三子像素及一个所述第四子像素以2*2设置。
  9. 如权利要求1所述的图像传感器，其中所述第一像素包括二个所述第一子像素及二个所述第二子像素以2*2设置，以及所述第二像素包括二个所述第三子像素及二个所述第四子像素以2*2设置。
  10. 如权利要求9所述的图像传感器，其中二个所述第一子像素相邻设置或对角设置，以及二个所述第三子像素相邻设置或对角设置，以及。
  11. 如权利要求1所述的图像传感器，其中所述第一像素包括一个所述第一子像素及三个所述第二子像素以2*2设置，以及所述第二像素包括一个所述第三子像素及三个所述第四子像素以2*2设置。
  12. 如权利要求1所述的图像传感器，进一步包括：
    控制电路，由所述第一子像素及所述第二子像素共用，其中所述控制电路用以：
    依据第一曝光时间，产生第一控制信号，以控制所述第一子像素和所述第二子像素的其中之一的电荷输出至所述第一浮动扩散节点；以及
    依据第二曝光时间，产生第二控制信号，以控制所述第一子像素和所述第二子像素的其中另一的电荷输出至所述第一浮动扩散节点，以和所述第一浮动扩散节点因应所述第 一控制信号搜集的电荷合并积累。
  13. 如权利要求1所述的图像传感器，进一步包括：
    控制电路，由所述第一子像素及所述第二子像素共用，其中所述控制电路用以：
    依据第一曝光时间，产生第一控制信号，以控制所述第一子像素和所述第二子像素的其中之一的电荷输出至所述第一浮动扩散节点；
    产生复位信号，以清除所述第一浮动扩散节点因应所述第一控制信号搜集的电荷复位；以及
    依据第二曝光时间，产生第二控制信号，以控制所述第一子像素和所述第二子像素的其中另一的电荷输出至所述第一浮动扩散节点。
  14. 如权利要求12或13中任一项所述的图像传感器，其中所述第一曝光时间和所述第二曝光时间是依据所述第一平均感光值和所述第二平均感光值决定。
  15. 如权利要求1所述的图像传感器，其中所述第二子像素及所述第四子像素用以提升所述图像的轮廓信息。
  16. 如权利要求1所述的图像传感器，其中所述像素阵列进一步包括：
    第三浮动扩散节点；
    第三像素，包括第五子像素及第六子像素，共用所述第三浮动扩散节点，所述第五子像素为红色子像素、绿色子像素及蓝色子像素的其中之一，所述第五子像素的颜色不同于所述第一子像素及所述第三子像素；以及
    第四浮动扩散节点；
    第四像素，包括第七子像素及第八子像素，共用所述第四浮动扩散节点，所述第七子像素为红色子像素、绿色子像素及蓝 色子像素的其中之一，所述第七子像素的颜色不同于所述第一子像素及所述第三子像素，并且相同于所述第五子像素。
  17. 如权利要求16所述的图像传感器，其中所述第七子像素及所述第五子像素为绿色子像素。
  18. 如权利要求1所述的图像传感器，其中所述第二子像素做为相位像素对中的第一相位检测像素，以及所述第三子像素做为所述相位像素对中的第二相位检测像素。
  19. 一种电子装置，包括：
    所述图像处理器；以及
    如权利要求1-18中任一项所述的图像传感器。
PCT/CN2020/101880 2020-07-14 2020-07-14 图像传感器以及相关电子装置 Ceased WO2022011547A1 (zh)

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