WO2022007238A1 - 谐振器 - Google Patents

谐振器 Download PDF

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Publication number
WO2022007238A1
WO2022007238A1 PCT/CN2020/122534 CN2020122534W WO2022007238A1 WO 2022007238 A1 WO2022007238 A1 WO 2022007238A1 CN 2020122534 W CN2020122534 W CN 2020122534W WO 2022007238 A1 WO2022007238 A1 WO 2022007238A1
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WO
WIPO (PCT)
Prior art keywords
electrode
acoustic wave
longitudinal
wave reflector
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/122534
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English (en)
French (fr)
Inventor
窦韶旭
吕丽英
杨帅
吴一雷
韩琦
吴珂
王超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AAC Technologies Holdings Shenzhen Co Ltd
AAC Technologies Holdings Nanjing Co Ltd
Original Assignee
AAC Acoustic Technologies Shenzhen Co Ltd
AAC Technologies Holdings Nanjing Co Ltd
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Publication of WO2022007238A1 publication Critical patent/WO2022007238A1/zh
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/174—Membranes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/178—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of a laminated structure of multiple piezoelectric layers with inner electrodes

Definitions

  • the invention relates to the technical field of resonators, in particular to a thin-film bulk acoustic wave resonator.
  • the resonator includes a substrate, a first electrode, a piezoelectric film and a second electrode arranged along a first direction, and a longitudinal acoustic wave reflector is arranged between the substrate and the first electrode; the longitudinal acoustic wave reflector
  • the area surrounded by the inner edge of the orthographic projection along the first direction is the resonance area, and the area surrounded by the overlapping portion of the first electrode, the second electrode and the piezoelectric film along the first direction is the excitation area , longitudinal acoustic waves and transverse acoustic waves are generated in the excitation region.
  • the composite film is discontinuous in the excitation region and outside the excitation region, and when the transverse acoustic wave propagates outward to the side of the excitation region and the side of the resonance region, an acoustic wave scattering effect occurs each, resulting in the generation of a large number of transverse waves. Superimposed vibration, and a large amount of acoustic wave energy enters the substrate to form dissipation, resulting in a significant reduction in the Q value of the anti-resonance point.
  • An object of the present invention is to provide a resonator with reduced energy loss and increased Q value.
  • the present invention provides a resonator, which includes a base, a composite film disposed above the base along a first direction, and a longitudinal acoustic wave reflector disposed on the side of the composite film close to the base;
  • the composite film includes a first electrode, a piezoelectric functional film and a second electrode arranged in sequence along the first direction, and the first electrode is arranged on the substrate and the longitudinal acoustic wave reflector;
  • the resonator It also includes a closed or open annular transverse acoustic wave reflector disposed on the surface of the composite film, and the inner side of the transverse acoustic wave reflector is along the first direction to the area surrounded by the orthographic projection of the composite film is a resonance region, and the region of the resonator outside the resonance region is a non-resonance region; the first electrode, the piezoelectric functional film and the second electrode all completely cover the resonance region; the piezoelectric
  • the electrical functional film includes a longitudinal piez
  • the transverse acoustic wave reflector is disposed on a side of the first electrode away from the second electrode and is disposed around the longitudinal acoustic wave reflector.
  • the substrate comprises a bottom wall opposite to the first electrode and a ring-shaped side wall bent and extended from the bottom wall to the first electrode, the first electrode is disposed on the The side of the side wall remote from the bottom wall, the side wall acts as the transverse acoustic wave reflector.
  • the side wall and the bottom wall together form a cavity structure
  • the cavity structure acts as the longitudinal acoustic wave reflector
  • the first electrode completely covers the cavity structure
  • the transverse acoustic wave reflector is disposed on a side of the piezoelectric functional film away from the first electrode and at least partially surrounds the second electrode, and the inner surface of the transverse acoustic wave reflector abuts against the first electrode. the second electrode, the acoustic impedance of the transverse acoustic wave reflector is different from the acoustic impedance of the second electrode.
  • the acoustic impedance of the transverse acoustic wave reflector is greater than the acoustic impedance of the second electrode.
  • the substrate includes a bottom wall spaced opposite to the first electrode and a ring-shaped side wall bent and extended from the bottom wall to the first electrode, the side wall and the bottom wall are common A cavity structure is enclosed, the cavity structure acts as the longitudinal acoustic wave reflector, and the first electrode is disposed on the side of the side wall away from the bottom wall.
  • the longitudinal acoustic wave reflector is a Bragg acoustic reflector disposed on a side of the substrate close to the first electrode, and the first electrode is disposed on a side of the Bragg acoustic reflector away from the substrate.
  • the orthographic projection of the area enclosed by the inner side surface of the transverse acoustic wave reflector to the longitudinal acoustic wave reflector along the first direction at least partially falls within the range of the longitudinal acoustic wave reflector.
  • the orthographic projection of the longitudinal piezoelectric film to the transverse acoustic wave reflector along the first direction completely falls within the area enclosed by the inner side surface of the transverse acoustic wave reflector.
  • the part of the composite film that falls in the region surrounded by the outer side surface of the longitudinal piezoelectric film along the first direction forms an excitation region, and the excitation region is located in the resonance region.
  • the longitudinal piezoelectric film has a piezoelectric coefficient along the first direction, and the piezoelectric coefficient of the longitudinal non-piezoelectric film along the first direction is zero or smaller than the longitudinal piezoelectric film along the first direction.
  • the piezoelectric coefficient in the first direction is described.
  • a closed or open annular transverse acoustic wave reflector is arranged on the surface of the composite film, and the inner side of the transverse acoustic wave reflector is projected along the first direction to the orthographic projection of the composite film.
  • the surrounding area is the resonance area, and the area where the resonator is located outside the resonance area is the non-resonant area; the first electrode, the piezoelectric functional film and the second electrode all completely cover the resonance area;
  • the acoustic impedance of the part where the resonator is located in the resonance region is related to the The acoustic impedances of the parts located in the non-resonant area are different, and the acoustic impedances of the parts located in the resonant area of the first electrode, the piezoelectric functional film and the second electrode are all substantially constant; in the above structure, the transverse acoustic wave reflector is set so that the acoustic impedance of the part of the resonator in the reson
  • FIG. 1 is a schematic three-dimensional structure diagram of Embodiment 1 of the resonator of the present invention
  • FIG. 2 is an exploded view of a partial three-dimensional structure of the first embodiment of the resonator of the present invention
  • Fig. 3 is the sectional view along A-A line of Fig. 1;
  • Fig. 4 is the impedance comparison diagram of the resonator of the present invention and the related art resonator;
  • FIG. 5 is a schematic three-dimensional structure diagram of Embodiment 2 of the resonator of the present invention.
  • Embodiment 6 is an exploded view of a partial three-dimensional structure of Embodiment 2 of the resonator of the present invention.
  • FIG. 7 is a cross-sectional view taken along line B-B of FIG. 5 .
  • the shape of the electrodes in the resonator is mostly apodized polygons, and the specific shape of the electrodes in the resonator can be set according to the actual design.
  • the shapes of the resonator electrodes in the first embodiment shown in Figs. 1-3 and the resonator electrodes in the second embodiment shown in Figs. 5-7 are square, and the setting of the shapes does not limit the shape of the resonator electrodes in this patent. Apodized polygons and other shapes cannot be used.
  • the resonator of the present invention is described below through two embodiments:
  • the present invention provides a resonator 100, which includes a substrate 1, a composite film 2 disposed above the substrate 1 along a first direction (ie, the X-axis direction), and a composite film 2 disposed on the substrate 1.
  • the longitudinal acoustic wave reflector 3 on the side of the composite film 2 close to the substrate 1 and the transverse acoustic wave reflector 4 on the surface of the composite film 2 , wherein the first direction is the thickness direction of the resonator 100 .
  • the composite film 2 includes a first electrode 21 , a piezoelectric functional film 22 and a second electrode 23 arranged in sequence along the first direction, and the first electrode 21 is arranged on the substrate 1 and the longitudinal acoustic wave reflector 3 and above.
  • the arrangement of two adjacent structures is not limited, and they can be in direct contact with each other or indirectly connected through other structures arranged between adjacent structures.
  • the composite membrane 2 is stacked on On the surface of the substrate 1 , the first electrode 21 is stacked on the substrate 1 and covered on the longitudinal acoustic wave reflector 3 , and the piezoelectric functional film 22 is stacked on the first electrode On the surface of 21, the second electrode 23 is stacked on the surface of the piezoelectric functional film 22 away from the first electrode 21; It is also feasible that the two layers are not directly stacked with each other. For example, according to the actual design needs, it is also feasible to add other layer structures between the composite membrane and the substrate. Similarly, in the first It is also feasible to add other film layer structures between the electrode and the piezoelectric functional film, or between the piezoelectric functional film and the second electrode.
  • the specific structural form and specific location of the transverse acoustic wave reflector 4 are not limited, and can be specifically selected according to the actual situation.
  • the transverse acoustic wave The reflector 4 has a closed annular structure, and the transverse acoustic wave reflector 4 is arranged on the first electrode 21 .
  • the transverse acoustic wave reflector 4 is stacked on the first electrode 21 away from the One side of the second electrode 23 is disposed around the longitudinal acoustic wave reflector 3; of course, in other embodiments, the transverse acoustic wave reflector is also feasible in an open annular structure.
  • the substrate 1 includes a bottom wall 11 that is spaced apart from the first electrode 21 , and a ring-shaped loop extending from the bottom wall 11 to the first electrode 21 and connected to the surface of the composite film 2 .
  • the first electrode 21 is disposed on the side of the side wall 12 away from the bottom wall 11 , and the side wall 12 acts as the transverse acoustic wave reflector.
  • the side wall 12 and the bottom wall 11 together form a cavity structure, the cavity structure acts as the longitudinal acoustic wave reflector 3 , and the first electrode 21 completely covers the cavity structure.
  • the resonance region 10 the area surrounded by the orthographic projection of the inner side surface 41 of the transverse acoustic wave reflector 4 to the composite film 2 along the first direction is the resonance region 10 , and the resonator 100 is located in the resonance region 10 .
  • the area outside the area 10 is the non-resonant area 20 ; the first electrode 21 , the piezoelectric functional film 22 , and the second electrode 23 all completely cover the resonant area 10 .
  • the acoustic impedance of the part of the resonator 100 located in the resonant region 10 is different from the acoustic impedance of the part of the resonator 100 located in the non-resonant region 20, so that the acoustic impedance of the resonant region 10 is different from that of the non-resonant region 20.
  • the acoustic impedances between the resonant regions 20 are discontinuous, and the acoustic impedances of the parts of the composite film 2 located in the resonant region 10 are substantially constant.
  • the first electrodes 21, The acoustic impedance of the piezoelectric functional film 22 and the portion of the second electrode 23 located in the resonance region 10 is substantially constant; The acoustic impedance is greater than the acoustic impedance of the portion of the composite film 2 located in the non-resonant region 20 .
  • the piezoelectric functional film 22 includes a vertical piezoelectric film 221 located in the resonance region 10 and disposed on the first electrode 21 , and a vertical piezoelectric film 221 disposed and disposed around the outer periphery of the vertical piezoelectric film 221
  • the vertical non-piezoelectric film 222 on the first electrode 21 specifically, in this embodiment, the vertical piezoelectric film 221 is stacked on the side of the first electrode 21 away from the substrate 1,
  • the longitudinal non-piezoelectric film 222 is stacked on the side of the first electrode 21 away from the substrate 1; the piezoelectric functional film 22 has a piezoelectric coefficient along the first direction.
  • the longitudinal piezoelectric film 221 has a piezoelectric coefficient along the first direction; the piezoelectric coefficient of the longitudinal non-piezoelectric film 222 along the first direction is zero or smaller than that of the longitudinal piezoelectric film 221 along the first direction. Piezoelectric coefficient in the first direction.
  • the longitudinal piezoelectric film 221 and the longitudinal non-piezoelectric film 222 are respectively made of two different materials; or, the longitudinal piezoelectric film 221 and the longitudinal non-piezoelectric film 222 are respectively made of two It is made of the same material with different crystal characteristics; further, the longitudinal non-piezoelectric film 222 is a composite structure composed of two or more layers of films with different materials.
  • the resonance region 10 is composed of an excitation region 101 and a non-excitation region 102, wherein the excitation region 101 is located by the composite film 2 falling on the outer side surface 2210 of the longitudinal piezoelectric film 221 along the first direction.
  • the non-excited area 102 is formed around the outer periphery of the excitation area 101 , in fact, the non-excited area 102 is the difference between the resonance area 10 and the excitation area 101 . It should be noted that the acoustic impedance of each film layer of the composite film 2 located in the resonance region 10 is substantially constant.
  • the first electrode 21 , the piezoelectric functional film 22 , the The acoustic impedance of the portion of the second electrode 23 located in the resonance region 10 is substantially constant. Specifically, the acoustic impedance of the portion of the composite film 2 located in the excitation region 101 remains unchanged, and the acoustic impedance of the portion of the composite film 2 located in the non-excitation region 102 is within 30% of the acoustic impedance of the portion of the composite film 2 located in the excitation region 101. It can be considered that the acoustic impedance of each film layer of the composite film 2 located in the resonant region 10 is substantially constant.
  • the acoustic impedance of the longitudinal non-piezoelectric film 222 in the non-excited region 102 is equivalent to 70% to 130% of the acoustic impedance of the longitudinal piezoelectric film 221 . It can be considered that the piezoelectric functional film 22 is in the resonance region 10 .
  • the acoustic impedance of the inner part is approximately constant.
  • the acoustic impedances of the first electrode 21 and the second electrode 23 in the excitation region 101 and the non-excitation region 102 satisfy the above relationship, it can also be considered that the first electrode 21 and the second electrode 23 are in the resonance region 10.
  • the acoustic impedance of the part is roughly constant.
  • the part of the composite membrane 2 located in the excitation region 101 will excite the longitudinal acoustic wave S1 (for the working mode acoustic wave) and the transverse acoustic wave S2 (for the non-working mode acoustic wave) , the longitudinal acoustic wave S1 is confined in the composite membrane 2 by the upper and lower reflection interfaces, while the transverse acoustic wave S2 propagates laterally outward from the interior of the composite membrane 2 along the first direction perpendicular to the first direction.
  • the acoustic impedance of the non-excitation area 102 is the same as that of the excitation area 101, when the transverse acoustic wave S2 passes through the interface between the excitation area 101 and the non-excitation area 102, all the Described transverse acoustic wave S2 produces sound wave scattering effect, effectively reduces the sound wave energy of transverse acoustic wave S2 The phenomenon of scattering loss occurs, it is ensured that most of the acoustic wave energy of described transverse acoustic wave S2 transmits and propagates forward;
  • the acoustic impedance of 102 is smaller than the acoustic impedance of the non-resonant region 20.
  • the transverse acoustic wave S2 passes through the interface between the non-excited region 102 and the non-resonant region 20, the transverse acoustic wave S2 is larger than that of the non-resonant region 20.
  • Part of the acoustic wave energy is mainly returned to the resonant area 10 through acoustic wave reflection and propagates, and only a small part of the energy will have the acoustic wave scattering effect, which effectively prevents most of the transverse acoustic waves S2 from entering the non-resonant area 20 to form energy loss.
  • the width of the non-excited region 102 is controlled to be small enough, the transverse incident wave and the reflected wave will not form standing wave resonance in the non-excited region 102 to avoid the formation of the parasitic mode of the transverse acoustic wave S2, The sound wave energy of the transverse sound wave S2 is further guaranteed.
  • the impedance curve of the resonator 100 of the present invention and the impedance curve of the related art resonator are relatively close to the value near the trough position on the left, while the values of the two are near the peak position.
  • the peak position of the impedance curve of the resonator 100 of the present invention is sharper and has a higher impedance peak, that is, the Q value of the resonator 100 of the present invention is higher.
  • the acoustic impedance of the part of the composite film 2 located in the resonant region 10 is discontinuous with the acoustic impedance of the part of the composite film 2 located in the non-resonant region 20.
  • the transverse acoustic wave reflector The inner side 41 of 4 acts as the interface between the resonant area 10 and the non-resonant area 20, so that the acoustic impedance of the composite film on both sides of the inner side 41 of the transverse acoustic wave reflector 4 is discontinuous, and the transverse acoustic wave S2 propagates outwards.
  • the transverse acoustic wave S2 only one sound wave scattering effect occurs at the inner side surface 41 of the transverse sound wave reflector 4, and most of the sound wave energy of the transverse sound wave S2 mainly returns to the resonance region 10 through the sound wave reflection effect and propagates, effectively
  • the sound wave energy of the transverse acoustic wave S2 is guaranteed, so under the cooperation of the longitudinal acoustic wave reflector 3 and the transverse acoustic wave reflector 4, the transverse acoustic wave resonance is less and weaker, and the Q value of the anti-resonance point is greatly improved, thereby obtaining a larger The device Q value.
  • the orthographic projection of the longitudinal piezoelectric film 221 to the transverse acoustic wave reflector 4 along the first direction completely falls on the transverse acoustic wave reflection. within the area enclosed by the inner side surface 41 of the device 4 .
  • the resonator 100a of the second embodiment is essentially a derivative embodiment of the sound-emitting device of the first embodiment.
  • the structures of the two are basically the same, and the same parts are not repeated
  • the main differences of the resonator 100a of the second embodiment are as follows:
  • the transverse acoustic wave reflector 4a is disposed on the side of the piezoelectric functional film 22a away from the first electrode 21a and at least partially surrounds the second electrode 23a, and the inner side surface 41a of the transverse acoustic wave reflector 4a abuts against the second electrode 23a; more specifically Yes, the transverse acoustic wave reflector 4a is stacked on the side of the longitudinal non-piezoelectric film 222a away from the first electrode 21a, and the transverse acoustic wave reflector 4a is an incompletely closed open ring.
  • the material density of the transverse acoustic wave reflector 4a is different from that of the second electrode 23a, so that the acoustic impedance of the transverse acoustic wave reflector 4a is different from that of the second electrode 23a, so that the For example, in the second embodiment, the material density of the transverse acoustic wave reflector 4a is greater than that of the second electrode 23a, so that the acoustic impedance of the transverse acoustic wave reflector 4a is greater than that of the second electrode 23a.
  • the substrate 1a includes a bottom wall 11a spaced apart from the first electrode 21a and a side wall 12a bent and extended from the bottom wall 11a to the first electrode 21a in a ring shape.
  • the side wall 12a and the bottom wall 11a together form a cavity structure.
  • the cavity structure acts as a longitudinal acoustic wave reflector 3a, and the first electrode 21a is disposed on the side of the side wall 12a away from the bottom wall 11a, specifically, the first electrode 21a is stacked on the surface of the side wall 12a away from the bottom wall 11a and completely covers cavity structure.
  • the specific formation method of the longitudinal acoustic wave reflector 3a is not limited, and it can be specifically set according to the actual situation.
  • the longitudinal acoustic wave reflector 3a is formed by the substrate 1a close to the first electrode 21a is a cavity structure formed by concave in the direction away from the first electrode 21a, and the first electrode 21a covers the cavity structure; of course, in other embodiments, the longitudinal acoustic wave reflector is arranged on the side of the substrate close to the first electrode
  • the Bragg acoustic reflector is also feasible, and the first electrode is arranged on the side of the Bragg acoustic reflector away from the substrate, that is, at this time, the first electrode is directly stacked on the longitudinal acoustic wave reflector.
  • the orthographic projection of the area surrounded by the inner side surface 41a of the transverse acoustic wave reflector 4a to the longitudinal acoustic wave reflector 3a along the first direction at least partially falls within the range of the longitudinal acoustic wave reflector 3a.
  • a closed or open annular transverse acoustic wave reflector is arranged on the surface of the composite film, and the inner side of the transverse acoustic wave reflector is projected along the first direction to the orthographic projection of the composite film.
  • the surrounding area is the resonance area, and the area where the resonator is located outside the resonance area is the non-resonant area; the first electrode, the piezoelectric functional film and the second electrode all completely cover the resonance area;
  • the acoustic impedance of the part where the resonator is located in the resonance region is related to the The acoustic impedances of the parts located in the non-resonant area are different, and the acoustic impedances of the parts located in the resonant area of the first electrode, the piezoelectric functional film and the second electrode are all substantially constant; in the above structure, the transverse acoustic wave reflector is set so that the acoustic impedance of the part of the resonator in the reson

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Abstract

提供一种谐振器，其包括基底（1）、沿第一方向设置于基底（1）的复合膜（2）以及设置于复合膜（2）靠近基底（1）一侧的纵向声波反射器（3）；复合膜（2）包括沿第一方向依次设置的第一电极（21）、压电功能膜（22）以及第二电极（23），第一电极（21）设置于基底（1）和纵向声波反射器（3）之上；横向声波反射器（4）的内侧面沿第一方向向复合膜（2）的正投影所包围的区域为谐振区（10），谐振器位于谐振区（10）外的区域为非谐振区（20）；第一电极（21）、压电功能膜（22）和第二电极（23）均完全覆盖谐振区（10）；复合膜（2）位于谐振区（10）的部分的声阻抗与复合膜（2）位于非谐振区（20）的部分的声阻抗相异，且第一电极（21）、压电功能膜（22）和第二电极（23）位于谐振区（10）内的部分的声阻抗均是大致不变的。与相关技术相比，上述的谐振器能量损失小且Q值增大。

Description

谐振器 技术领域
本发明涉及谐振器技术领域，尤其涉及一种薄膜体声波谐振器。
 背景技术
随着智能设备的日益增多，以及物联网和5G技术的不断普及，对高性能滤波器和多功器的需求越来越大。声学谐振器作为滤波器和多功器的重要组成部分，一直是近年来研究的重点对象。
相关技术中，谐振器包括沿第一方向设置的基底、第一电极、压电膜以及第二电极，所述基底和所述第一电极之间设置有纵向声波反射器；所述纵向声波反射器沿所述第一方向的正投影内边缘所包围的区域为谐振区，所述第一电极、第二电极以及压电膜沿所述第一方向相重叠的部分所包围的区域为激发区，在激发区内会产生纵向声波和横向声波。
 技术问题
然而，相关技术中，复合膜在激发区和激发区外不连续，横向声波向外传播到激发区的侧边和谐振区的侧边时，各发生一次声波散射效应，导致产生大量横向波的叠加振动，且大量声波能量进入基底形成耗散，造成反谐振点的Q值大幅降低。
因此，实有必要提供一种新的谐振器解决上述技术问题。
 技术解决方案
本发明的目的在于提供一种减少能量损失且Q值增大的谐振器。
为了达到上述目的，本发明提供一种谐振器，其包括基底、沿第一方向设置于所述基底上方的复合膜以及设置于所述复合膜靠近所述基底一侧的纵向声波反射器；所述复合膜包括沿所述第一方向依次设置的第一电极、压电功能膜以及第二电极，所述第一电极设置于所述基底和所述纵向声波反射器之上；所述谐振器还包括设置于所述复合膜表面且呈封闭或开口的环状的横向声波反射器，所述横向声波反射器的内侧面沿所述第一方向向所述复合膜的正投影所包围的区域为谐振区，所述谐振器位于所述谐振区外的区域为非谐振区；所述第一电极、所述压电功能膜和所述第二电极均完全覆盖所述谐振区；所述压电功能膜包括位于所述谐振区内且设置于所述第一电极远离所述基底一侧的纵向压电膜以及环绕所述纵向压电膜外周缘且设置于所述第一电极远离所述基底一侧的纵向非压电膜；所述谐振器位于所述谐振区的部分的声阻抗与所述谐振器位于所述非谐振区的部分的声阻抗相异，且所述第一电极、所述压电功能膜和所述第二电极位于所述谐振区内的部分的声阻抗均是大致不变的。
优选的，所述横向声波反射器设置于所述第一电极远离所述第二电极的一侧并环绕所述纵向声波反射器设置。
优选的，所述基底包括与所述第一电极相对间隔的底壁以及由所述底壁向所述第一电极弯折延伸的呈环状的侧壁，所述第一电极设置于所述侧壁远离所述底壁的一侧，所述侧壁充当所述横向声波反射器。
优选的，所述侧壁与所述底壁共同围成空腔结构，所述空腔结构充当所述纵向声波反射器，所述第一电极完全覆盖所述空腔结构。
优选的，所述横向声波反射器设置于所述压电功能膜远离所述第一电极的一侧且至少部分环绕所述第二电极设置，所述横向声波反射器的内侧面抵接于所述第二电极，所述横向声波反射器的声阻抗与所述第二电极的声阻抗不同。
优选的，所述横向声波反射器的声阻抗大于所述第二电极的声阻抗。
优选的，所述基底包括与所述第一电极相对间隔的底壁以及由所述底壁向所述第一电极弯折延伸呈环状的侧壁，所述侧壁与所述底壁共同围成空腔结构，所述空腔结构充当所述纵向声波反射器，所述第一电极设置于所述侧壁远离所述底壁的一侧。
优选的，所述纵向声波反射器为设置于所述基底靠近所述第一电极一侧的布拉格声反射镜，所述第一电极设置于所述布拉格声反射镜远离所述基底一侧。
优选的，所述横向声波反射器的内侧面所围成的区域沿所述第一方向向所述纵向声波反射器的正投影至少部分落在所述纵向声波反射器的范围内。
优选的，所述纵向压电膜沿所述第一方向向所述横向声波反射器的正投影完全落在所述横向声波反射器的内侧面所围成的区域内。
优选的，所述复合膜沿所述第一方向落在所述纵向压电膜的外侧面所围成的区域的部分形成激发区，所述激发区位于所述谐振区内。
优选的，所述纵向压电膜具有沿所述第一方向的压电系数，所述纵向非压电膜沿所述第一方向的压电系数为零或小于所述纵向压电膜沿所述第一方向的压电系数。
 有益效果
与相关技术相比，本发明的谐振器中，将呈封闭或开口的环状的横向声波反射器设置于复合膜表面，横向声波反射器的内侧面沿第一方向向复合膜的正投影所包围的区域为谐振区，谐振器位于谐振区外的区域为非谐振区；第一电极、压电功能膜和第二电极均完全覆盖谐振区；压电功能膜包括位于谐振区内且设置于第一电极远离基底一侧的纵向压电膜以及环绕纵向压电膜外周缘且设置于第一电极远离基底一侧的纵向非压电膜；谐振器位于谐振区的部分的声阻抗与谐振器位于非谐振区的部分的声阻抗相异，且第一电极、压电功能膜和第二电极位于谐振区内的部分的声阻抗均是大致不变的；上述结构中，通过横向声波反射器的设置，使得谐振器位于谐振区的部分的声阻抗与谐振器位于非谐振区的部分的声阻抗不连续，横向声波反射器的内侧面充当了谐振区和非谐振区的分界面，使得复合膜在横向声波反射器的内侧面的两侧的声阻抗不连续，而在横向声波向外传播过程中，只在横向声波反射器的内侧面处发生一次声波散射效应，且横向声波反射器对横向声波主要发生的是声波反射作用，因此在纵向、横向声波反射器的共同作用下，横向波谐振更少更弱，反谐振点的Q值大幅提高。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1为本发明谐振器实施方式一的立体结构示意图；
图2为本发明谐振器实施方式一的部分立体结构分解图；
图3为图1沿A-A线的剖视图；
图4为本发明谐振器与相关技术谐振器阻抗对比图；
图5为本发明谐振器实施方式二的立体结构示意图；
图6为本发明谐振器实施方式二的部分立体结构分解图；
图7为图5沿B-B线的剖视图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
首先，需要说明的是，在实际应用中，谐振器中电极的形状多为变迹多边形，而谐振器中电极具体的形状可以根据实际设计的情况进行具体的设置，比如，下面所提及到的图1-3所示的实施方式一的谐振器电极以及图5-7所示实施方式二的谐振器电极的形状均为正方形，该形状的设置并非限定了本专利中的谐振器电极形状不能用变迹多边形以及其他形状。下面通过两个实施方式对本发明的谐振器进行展开描述：
实施方式一
请参阅图1-3所示，本发明提供一种谐振器100，其包括基底1、沿第一方向（即X轴方向）设置于所述基底1上方的复合膜2、设置于所述所述复合膜2靠近所述基底1一侧的纵向声波反射器3以及设置于所述复合膜2表面的横向声波反射器4，其中，所述第一方向为所述谐振器100的厚度方向。
所述复合膜2包括沿所述第一方向依次设置的第一电极21、压电功能膜22以及第二电极23，所述第一电极21设置于所述基底1和所述纵向声波反射器3之上。相邻两个结构相互之间的设置方式是不限的，可以彼此直接接触或通过设置在相邻结构之间的其他结构间接连接，在本实施方式一中，所述复合膜2叠设于所述基底1的表面上，所述第一电极21叠设于所述基底1并盖设于所述纵向声波反射器3之上，所述压电功能膜22叠设于所述第一电极21的表面上，所述第二电极23叠设于所述压电功能膜22远离所述第一电极21的表面上；当然，在其他实施方式中，在相邻两个结构之间增设其它的膜层结构，使得两者相互之间不直接叠设也是可行的，譬如，可以根据实际设计的需要，复合膜与基底之间增加其它的膜层结构也是可行，同样道理，而在第一电极与压电功能膜之间、或在压电功能膜与第二电极之间增设其它的膜层结构也是可行的。
值得一提的是，所述横向声波反射器4具体的结构形式及具体位置的设置是不限的，其可以根据实际情况进行具体的选择，比如，在本实施方式一中，所述横向声波反射器4呈封闭的环状结构，所述横向声波反射器4设置于所述第一电极21之上，具体的，所述横向声波反射器4叠设于所述第一电极21远离所述第二电极23的一侧且环绕所述纵向声波反射器3设置；当然，在其它的实施方式中，横向声波反射器呈开口的环状结构也是可行的。
具体的，所述基底1包括与所述第一电极21相对间隔的底壁11以及由所述底壁11向所述第一电极21弯折延伸并连接于所述复合膜2表面的呈环状的侧壁12；所述第一电极21设置于所述侧壁12远离所述底壁11的一侧，所述侧壁12充当所述横向声波反射器。
进一步，所述侧壁12与所述底壁11共同围成空腔结构，所述空腔结构充当了所述纵向声波反射器3，所述第一电极21完全覆盖所述空腔结构。
需要特别说明的是，所述横向声波反射器4的内侧面41沿所述第一方向向所述复合膜2的正投影所包围的区域为谐振区10，所述谐振器100位于所述谐振区10外的区域为非谐振区20；所述第一电极21、所述压电功能膜22、所述第二电极23均完全覆盖所述谐振区10。所述谐振器100位于所述谐振区10的部分的声阻抗与所述谐振器100位于所述非谐振区20的部分的声阻抗相异，使得所述谐振区10 的声阻抗与所述非谐振区20之间的声阻抗之间不连续，且所述复合膜2的各个膜层位于所述谐振区10的部分的声阻抗是大致不变的，具体的，所述第一电极21、所述压电功能膜22、所述第二电极23位于所述谐振区10内的部分的声阻抗是大致不变的；更具体的，所述复合膜2位于所述谐振区10的部分的声阻抗大于所述复合膜2位于所述非谐振区20的部分的声阻抗。
在本实施方式中，所述压电功能膜22包括位于谐振区10内且设置于所述第一电极21之上的纵向压电膜221以及环绕所述纵向压电膜221外周缘设置且设置于所述第一电极21之上的纵向非压电膜222，具体的，本实施方式中，所述纵向压电膜221叠设于所述第一电极21远离所述基底1的一侧，所述纵向非压电膜222叠设于所述第一电极21远离所述基底1的一侧；所述压电功能膜22具有沿所述第一方向的压电系数，更具体的，所述纵向压电膜221具有沿所述第一方向的压电系数；所述纵向非压电膜222沿所述第一方向的压电系数为零或小于所述纵向压电膜221沿所述第一方向的压电系数。
进一步的，所述纵向压电膜221和所述纵向非压电膜222分别为两种不同的材料制成；或，所述纵向压电膜221和所述纵向非压电膜222分别为两种结晶特性不同的同种材料制成；更进一步的，所述纵向非压电膜222为材料不同的两层或多层膜组成的复合结构。
所述谐振区10由激发区101和非激发区102共同组成，其中，所述激发区101由所述复合膜2沿所述第一方向落在所述纵向压电膜221的外侧面2210所围成的区域的部分形成，而所述非激发区102围绕所述激发区101外周侧设置，实际上，所述非激发区102为所述谐振区10与所述激发区101之差。值得说明的是，所述复合膜2的各个膜层位于所述谐振区10的部分的声阻抗是大致不变的，本实施方式中所述第一电极21、所述压电功能膜22、所述第二电极23位于所述谐振区10内的部分的声阻抗均是大致不变的。具体的，复合膜2位于激发区101内部分的声阻抗不变，复合膜2位于非激发区102内部分的声阻抗相对于复合膜2位于激发区101内部分的声阻抗上下浮动30%以内均可以认为复合膜2的各个膜层位于谐振区10的部分的声阻抗是大致不变的。在本实施方式中，纵向非压电膜222在非激发区102内部分的声阻抗相当于纵向压电膜221的声阻抗的70%到130%均可以认为压电功能膜22在谐振区10内的部分的声阻抗是大致不变的。同样的，第一电极21和第二电极23在激发区101和非激发区102内的声阻抗满足上述关系的情况下，也可以认为第一电极21和第二电极23在谐振区10内的部分的声阻抗是大致不变的。
上述结构中，当谐振器100工作时，在所述复合膜2位于所述激发区101内的部分会激发纵向声波S1（为工作模态声波）和横向声波S2（为非工作模态声波），纵向声波S1被上下两个反射界面约束在所述复合膜2内，而横向声波S2则会从所述复合膜2内部沿垂直所述第一方向向外横向传播。
由于所述非激发区102的声阻抗与所述激发区101的声阻抗相同，当所述横向声波S2经过所述激发区101和所述非激发区102之间的分界面时，避免了所述横向声波S2发生声波散射效应，有效地降低横向声波S2的声波能量发生散射损耗现象，保证了所述横向声波S2的大部分声波能量发生透射并向前传播； 而又由于所述非激发区102的声阻抗小于所述非谐振区20的声阻抗，当所述横向声波S2经过所述非激发区102和所述非谐振区20之间的分界面时，但所述横向声波S2的大部分声波能量主要通过声波反射作用返回所述谐振区10内并传播，仅有小部分能量会发生声波散射效应，有效地避免了大部分的横向声波S2进入所述非谐振区20从而形成能量损耗；在实际应用中，当控制所述非激发区102的宽度足够小，横向入射波和反射波便不会在所述非激发区102形成驻波谐振，避免形成横向声波S2的寄生模态，更进一步地保证所述横向声波S2的声波能量。
请同时参阅图4所示，可以明显看到，本发明谐振器100的阻抗曲线和相关技术的谐振器的阻抗曲线在左侧的波谷位置附近的值比较接近，而两者的在波峰位置附近的值有明显区别，从图中可以得知本发明谐振器100的阻抗曲线的波峰位置更尖锐、具有更高的阻抗峰值，也就是说，本发明谐振器100的Q值更高。
上述结构中，通过横向声波反射器4的设置，使得复合膜2位于谐振区10的部分的声阻抗与复合膜2位于非谐振区20的部分的声阻抗不连续，此时，横向声波反射器4的内侧面41充当了谐振区10和非谐振区20的分界面，使得复合膜在横向声波反射器4的内侧面41的两侧的声阻抗不连续，而在横向声波S2向外传播过程中，只在所述横向声波反射器4的内侧面41处发生一次声波散射效应，而所述横向声波S2的大部分声波能量主要通过声波反射作用返回所述谐振区10内并传播，有效地保证了所述横向声波S2的声波能量，因此在纵向声波反射器3和横向声波反射器4的配合作用下，横向声波谐振更少更弱，反谐振点的Q值大幅提高，从而获得较大的器件Q值。
进一步的，为了保证所述激发区101位于所述谐振区10内，所述纵向压电膜221沿所述第一方向向所述横向声波反射器4的正投影完全落在所述横向声波反射器4的内侧面41所围成的区域内。
实施方式二
请参阅图5-7示出了实施方式二的谐振器100a，该实施方式二的谐振器100a实质为实施方式一的发声器件的衍生实施方式，两者的结构基本相同，对于相同部分不再一一赘述，而实施方式二的谐振器100a的主要的区别点在于：
横向声波反射器4a设置于压电功能膜22a远离第一电极21a的一侧且至少部分环绕第二电极23a设置，且横向声波反射器4a的内侧面41a抵接于第二电极23a；更具体的，横向声波反射器4a叠设于纵向非压电膜222a远离第一电极21a的一侧，横向声波反射器4a为不完全封闭的开口环状 。
值得一提的是，横向声波反射器4a的材料密度与第二电极23a的材料密度相异，使得横向声波反射器4a的声阻抗与第二电极23a的声阻抗相异，从而使得两者之间声阻抗不连续，比如，在本实施方式二，横向声波反射器4a的材料密度大于第二电极23a的材料密度，使得横向声波反射器4a的声阻抗大于第二电极23a的声阻抗。
基底1a包括与第一电极21a相对间隔的底壁11a以及由底壁11a向第一电极21a弯折延伸呈环状的侧壁12a，侧壁12a与底壁11a共同围成空腔结构，空腔结构充当纵向声波反射器3a，第一电极21a设置于侧壁12a远离底壁11a的一侧，具体的，第一电极21a叠设于侧壁12a远离底壁11a的表面之上并完全覆盖空腔结构。
需要说明的是，纵向声波反射器3a具体形成的方式是不限，其可以根据实际的情况进行具体的设置，比如，在本实施方式中，纵向声波反射器3a为由基底1a靠近第一电极21a一侧向远离第一电极21a的方向凹陷形成的空腔结构，第一电极21a覆盖空腔结构；当然，在其他的实施方式中，纵向声波反射器为设置于基底靠近第一电极一侧的布拉格声反射镜也是可行，第一电极设置于该布拉格声反射镜远离基底一侧，即此时，第一电极直接叠设于纵向声波反射器之上。
值得一提的是，横向声波反射器4a的内侧面41a所围成的区域沿所述第一方向向纵向声波反射器3a的正投影至少部分落在所述纵向声波反射器3a的范围内。
与相关技术相比，本发明的谐振器中，将呈封闭或开口的环状的横向声波反射器设置于复合膜表面，横向声波反射器的内侧面沿第一方向向复合膜的正投影所包围的区域为谐振区，谐振器位于谐振区外的区域为非谐振区；第一电极、压电功能膜和第二电极均完全覆盖谐振区；压电功能膜包括位于谐振区内且设置于第一电极远离基底一侧的纵向压电膜以及环绕纵向压电膜外周缘且设置于第一电极远离基底一侧的纵向非压电膜；谐振器位于谐振区的部分的声阻抗与谐振器位于非谐振区的部分的声阻抗相异，且第一电极、压电功能膜和第二电极位于谐振区内的部分的声阻抗均是大致不变的；上述结构中，通过横向声波反射器的设置，使得谐振器位于谐振区的部分的声阻抗与谐振器位于非谐振区的部分的声阻抗不连续，横向声波反射器的内侧面充当了谐振区和非谐振区的分界面，使得复合膜在横向声波反射器的内侧面的两侧的声阻抗不连续，而在横向声波向外传播过程中，只在横向声波反射器的内侧面处发生一次声波散射效应，且横向声波反射器对横向声波主要发生的是声波反射作用，因此在纵向、横向声波反射器的共同作用下，横向波谐振更少更弱，反谐振点的Q值大幅提高。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (12)

  1. 一种谐振器，其包括基底、沿第一方向设置于所述基底上方的复合膜以及设置于所述复合膜靠近所述基底一侧的纵向声波反射器，其特征在于，所述复合膜包括沿所述第一方向依次设置的第一电极、压电功能膜以及第二电极，所述第一电极设置于所述基底和所述纵向声波反射器之上；所述谐振器还包括设置于所述复合膜表面且呈封闭或开口的环状的横向声波反射器，所述横向声波反射器的内侧面沿所述第一方向向所述复合膜的正投影所包围的区域为谐振区，所述谐振器位于所述谐振区外的区域为非谐振区；所述第一电极、所述压电功能膜和所述第二电极均完全覆盖所述谐振区；所述压电功能膜包括位于所述谐振区内且设置于所述第一电极远离所述基底一侧的纵向压电膜以及环绕所述纵向压电膜外周缘且设置于所述第一电极远离所述基底一侧的纵向非压电膜；所述谐振器位于所述谐振区的部分的声阻抗与所述谐振器位于所述非谐振区的部分的声阻抗相异，且所述第一电极、所述压电功能膜和所述第二电极位于所述谐振区内的部分的声阻抗均是大致不变的。
  2. 根据权利要求1所述的谐振器，其特征在于，所述横向声波反射器设置于所述第一电极远离所述第二电极的一侧并环绕所述纵向声波反射器设置。
  3. 根据权利要求2所述的谐振器，其特征在于，所述基底包括与所述第一电极相对间隔的底壁以及由所述底壁向所述第一电极弯折延伸的呈环状的侧壁，所述第一电极设置于所述侧壁远离所述底壁的一侧，所述侧壁充当所述横向声波反射器。
  4. 根据权利要求3所述的谐振器，其特征在于，所述侧壁与所述底壁共同围成空腔结构，所述空腔结构充当所述纵向声波反射器，所述第一电极完全覆盖所述空腔结构。
  5. 根据权利要求1所述的谐振器，其特征在于，所述横向声波反射器设置于所述压电功能膜远离所述第一电极的一侧且至少部分环绕所述第二电极设置，所述横向声波反射器的内侧面抵接于所述第二电极，所述横向声波反射器的声阻抗与所述第二电极的声阻抗不同。
  6. 根据权利要求5所述的谐振器，其特征在于，所述横向声波反射器的声阻抗大于所述第二电极的声阻抗。
  7. 根据权利要求5所述的谐振器，其特征在于，所述基底包括与所述第一电极相对间隔的底壁以及由所述底壁向所述第一电极弯折延伸呈环状的侧壁，所述侧壁与所述底壁共同围成空腔结构，所述空腔结构充当所述纵向声波反射器，所述第一电极设置于所述侧壁远离所述底壁的一侧。
  8. 根据权利要求5所述的谐振器，其特征在于，所述纵向声波反射器为设置于所述基底靠近所述第一电极一侧的布拉格声反射镜，所述第一电极设置于所述布拉格声反射镜远离所述基底一侧。
  9. 根据权利要求7或8所述的谐振器，其特征在于，所述横向声波反射器的内侧面所围成的区域沿所述第一方向向所述纵向声波反射器的正投影至少部分落在所述纵向声波反射器的范围内。
  10. 根据权利要求1所述的谐振器，其特征在于，所述纵向压电膜沿所述第一方向向所述横向声波反射器的正投影完全落在所述横向声波反射器的内侧面所围成的区域内。
  11. 根据权利要求1所述的谐振器，其特征在于，所述复合膜沿所述第一方向落在所述纵向压电膜的外侧面所围成的区域的部分形成激发区，所述激发区位于所述谐振区内。
  12. 根据权利要求1所述的谐振器，其特征在于，所述纵向压电膜具有沿所述第一方向的压电系数，所述纵向非压电膜沿所述第一方向的压电系数为零或小于所述纵向压电膜沿所述第一方向的压电系数。
PCT/CN2020/122534 2020-07-10 2020-10-21 谐振器 Ceased WO2022007238A1 (zh)

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