WO2021254526A1 - 一种内存的工作频率调整方法、智能终端及存储介质 - Google Patents

一种内存的工作频率调整方法、智能终端及存储介质 Download PDF

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Publication number
WO2021254526A1
WO2021254526A1 PCT/CN2021/105348 CN2021105348W WO2021254526A1 WO 2021254526 A1 WO2021254526 A1 WO 2021254526A1 CN 2021105348 W CN2021105348 W CN 2021105348W WO 2021254526 A1 WO2021254526 A1 WO 2021254526A1
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Prior art keywords
memory
read
write
frequency
speed data
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PCT/CN2021/105348
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English (en)
French (fr)
Inventor
黄兆文
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深圳Tcl新技术有限公司
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Application filed by 深圳Tcl新技术有限公司 filed Critical 深圳Tcl新技术有限公司
Priority to JP2022574566A priority Critical patent/JP2023529858A/ja
Priority to EP21826396.0A priority patent/EP4167090A1/en
Priority to US18/002,214 priority patent/US20230244529A1/en
Priority to KR1020237001744A priority patent/KR20230174749A/ko
Publication of WO2021254526A1 publication Critical patent/WO2021254526A1/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/46—Multiprogramming arrangements
    • G06F9/50—Allocation of resources, e.g. of the central processing unit [CPU]
    • G06F9/5005—Allocation of resources, e.g. of the central processing unit [CPU] to service a request
    • G06F9/5011—Allocation of resources, e.g. of the central processing unit [CPU] to service a request the resources being hardware resources other than CPUs, Servers and Terminals
    • G06F9/5016—Allocation of resources, e.g. of the central processing unit [CPU] to service a request the resources being hardware resources other than CPUs, Servers and Terminals the resource being the memory
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G06F13/1668—Details of memory controller
    • G06F13/1689—Synchronisation and timing concerns
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F9/00—Arrangements for program control, e.g. control units
    • G06F9/06—Arrangements for program control, e.g. control units using stored programs, i.e. using an internal store of processing equipment to receive or retain programs
    • G06F9/30—Arrangements for executing machine instructions, e.g. instruction decode
    • G06F9/30181—Instruction operation extension or modification
    • G06F9/30189—Instruction operation extension or modification according to execution mode, e.g. mode flag
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Definitions

  • This application belongs to the technical field of memory control, and in particular relates to a method for adjusting the working frequency of a memory, an intelligent terminal, and a storage medium.
  • the terminal system when the terminal system is running, it will perform memory read and write operations at the frequency corresponding to the low-frequency memory particle, so the performance of the high-frequency memory particle is not fully utilized, resulting in low memory utilization efficiency and waste Memory resources. Therefore, the existing technology needs to be improved and developed.
  • the embodiments of the present application provide a method for adjusting the working frequency of a memory, an intelligent terminal, and a storage medium in response to the above-mentioned defects of the prior art, aiming to solve the problem of low memory utilization efficiency and wasting memory resources in the prior art.
  • an embodiment of the present application provides a method for adjusting the operating frequency of a memory, wherein the method includes:
  • the operating information of the smart terminal determine the memory read and write data of the terminal system.
  • the operating information is used to reflect the information generated during the operation of the terminal system, and the memory read and write data is used to reflect the terminal system’s Memory read and write speed;
  • the working frequency of the memory is adjusted.
  • the determining the memory read and write speed data of the terminal system according to the operating information of the smart terminal includes:
  • system tasks of the terminal system in operation including any one or more of application programs, service processes, or system functions;
  • the determining the memory read and write speed data of the terminal system according to the system task includes:
  • the system task obtain the read and write peak speed data corresponding to the system task and the terminal system when the terminal system is started, and the read and write peak speed data is used to reflect the interaction between the system task and the terminal system when the terminal system is started.
  • the maximum read and write speed of the memory is the maximum read and write speed of the memory
  • the acquiring, according to the system task, the corresponding reading and writing peak speed data when the terminal system is started includes:
  • the memory read and write data table stores the read and write peak speed data corresponding to the application program, the read and write peak speed data corresponding to the service process, and the read and write peak speed data corresponding to the system function Write peak speed data and read and write peak speed data corresponding to the terminal system;
  • the memory read and write data table respectively obtain the read and write peak speed data corresponding to the system task and the terminal system.
  • the acquiring the system task and the corresponding read and write peak speed data of the terminal system according to the memory read and write data table respectively includes:
  • the determining the memory read and write data based on the read and write peak speed data and the instantaneous read and write speed data includes:
  • the read and write peak speed data and the instantaneous read and write speed data are summed to obtain the memory read and write data.
  • the determining the working mode of the memory according to the read and write data of the memory includes:
  • the working mode of the memory is set to the different frequency working mode
  • the working mode of the memory is set to the same-frequency working mode.
  • the adjusting the operating frequency of the memory according to the operating mode includes:
  • the working mode of the memory is the same-frequency working mode
  • the frequencies corresponding to all the memory particles in the memory are obtained, the lowest frequency is determined from the frequencies corresponding to all the memory particles, and the lowest frequency is used as the memory
  • the working mode of the memory is an inter-frequency working mode
  • all memory particles in the memory are controlled to use their corresponding frequencies as the working frequencies.
  • the embodiments of the present application provide an intelligent terminal including a memory and one or more programs, wherein one or more programs are stored in the memory and configured to be executed by one or more processors
  • the one or more programs include a method for adjusting the operating frequency of the memory as described in any one of the above.
  • the embodiments of the present application provide a non-transitory computer-readable storage medium.
  • the instructions in the storage medium are executed by the processor of the electronic device, the electronic device can execute any of the above The working frequency adjustment method of the memory described above.
  • This embodiment first determines the memory read and write data of the terminal system according to the operating information of the smart terminal. Since the operation information reflects the information generated during the operation of the terminal system, according to the operation information, the read and write speed of the memory during the operation of the terminal system can be determined. That is, the memory read and write data is obtained. Then, the operating mode of the memory is determined according to the read and write data of the memory, and finally the operating frequency of the memory is adjusted according to the memory operating mode. Since the working mode in this embodiment is determined based on the memory read and write data, and the memory read and write data is obtained based on the operating information of the smart terminal, it can be seen that the working mode in this embodiment is based on what It is determined by the operating information generated by the terminal system in the actual operating process.
  • the operating frequency of the memory is adjusted according to the operating mode, so that the operating frequency of the memory can be adjusted according to the operating information, so as to achieve the effect of dynamically adjusting the operating frequency of the memory to maximize the memory. Performance to improve the utilization efficiency of the memory.
  • FIG. 1 is a schematic flowchart of a method for adjusting a working frequency of a memory provided by an embodiment of the present application.
  • FIG. 2 is a schematic diagram of a flow of acquiring memory read and write data in a method for adjusting a working frequency of a memory provided by an embodiment of the present application.
  • FIG. 3 is a schematic flowchart of determining the working mode in the method for adjusting the working frequency of the memory provided by an embodiment of the present application.
  • FIG. 4 is a schematic flowchart of adjusting the operating frequency of the memory in the method for adjusting the operating frequency of the memory provided by an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a device for adjusting operating frequency of a memory provided by an embodiment of the present application.
  • FIG. 6 is a schematic diagram between modules in a specific application embodiment of the device for adjusting the operating frequency of the memory provided by the embodiment of the present application.
  • FIG. 7 is a functional block diagram of the internal structure of a smart terminal provided by an embodiment of the present application.
  • DDR3 memory particles the maximum capacity of DDR3 memory particles is 512M, and in actual application, you may choose external memory particles of DDR4 or other types of memory particles, and it may also be built-in memory particles of DDR3-2133 And the combination of external memory particles with model DDR4-2666, so that there is a combination of memory particles with different frequencies.
  • the memory read and write operations are performed at the frequency corresponding to the memory particle with the lower frequency, so the performance of the memory particle with the higher frequency is not fully utilized, resulting in low memory utilization efficiency and waste.
  • Memory resources For example, when there is a combination of DDR3-2133 memory particles and external memory particles of DDR4-2666, the terminal system uses the frequency corresponding to the memory particles of DDR3-2133 to read and write all memory particles , This makes the memory particles of model DDR4-2666 unable to exert the maximum performance, resulting in a waste of resources.
  • this embodiment provides a method for adjusting the operating frequency of the memory.
  • the method for adjusting the operating frequency of the memory in this embodiment is used to maximize the performance of the memory and improve the utilization efficiency of the memory.
  • this embodiment first determines the memory read and write data of the terminal system according to the operating information of the smart terminal. Since the operating information reflects the information generated during the operation of the terminal system, according to the operating information, the read and write speed of the memory during the operation of the terminal system can be determined, that is, the memory read and write data can be obtained. Then according to the memory read and write data, determine the working mode of the memory, and finally adjust the working frequency of the memory according to the memory working mode.
  • the working mode in this embodiment is determined based on the memory read and write data, and the memory read and write data is obtained based on the operation information of the smart terminal, it can be seen that the working mode in this embodiment is based on the actual operation of the terminal system.
  • the operation information generated in the process is determined.
  • the operating frequency of the memory can be adjusted according to the operating information, thereby achieving the effect of dynamically adjusting the operating frequency of the memory.
  • this embodiment can maximize the performance of the memory and improve the utilization efficiency of the memory.
  • the intelligent terminal obtains the operating information of the intelligent terminal while it is running, and then obtains the read and write speed of the terminal system to the memory according to the operating information
  • the memory read and write data of the terminal system is obtained.
  • the operating mode of the memory such as synchronous frequency operating mode or asynchronous frequency operating mode.
  • the operating frequency of the memory is adjusted based on the operating mode. For example, if the memory is a combination of DDR3-2133 memory particles and external memory particles DDR4-2666, in this example, the memory read and write data can be obtained based on the operating information, and then the working mode is determined. Mode to adjust the operating frequency of the DDR3-2133 memory particles and the external model DDR4-2666 memory particles, so as to maximize the performance of the DDR3-2133 memory particles and the external model DDR4-2666 memory particles, and improve resources Utilization rate.
  • a method for adjusting the operating frequency of a memory is provided, which is applied to a smart terminal. As shown in FIG. 1, the method includes:
  • Step S100 Determine the memory read and write data of the terminal system according to the operating information of the smart terminal.
  • the operating information is used to reflect the information generated during the operation of the terminal system
  • the memory read and write data is used to reflect the read and write speed of the terminal system to the memory. .
  • the operating information can reflect the information generated during the operation of the smart terminal and the process of performing system tasks. These operating information can be the operating process of the smart terminal.
  • the memory read and write data of the terminal system in the process of performing system tasks can be obtained.
  • the memory read and write data is the terminal system reads and writes to the memory.
  • the data during operation, so the memory read and write data can reflect the read and write speed of the terminal system to the memory.
  • the operating information includes the memory read and write data of the terminal system when the application is started and subsequent applications are run. Therefore, According to the operating information, the memory read and write data can be obtained.
  • this embodiment includes the following steps when acquiring memory read and write data:
  • Step S101 Obtain operating information of the smart terminal
  • Step S102 Acquire system tasks in operation of the terminal system according to the operation information, and the system tasks include any one or more of application programs, service processes, or system functions;
  • Step S103 Determine the memory read and write speed data of the terminal system according to the system task.
  • the memory read and write data of the terminal system is related to the operation information of the smart terminal, this embodiment first needs to obtain the operation information of the smart terminal, and then obtain the system tasks being performed by the smart terminal according to the operation information.
  • the smart terminal performs read and write operations on the memory when performing system tasks. Therefore, in this embodiment, the memory read and write speed data of the terminal system can be obtained according to the system tasks.
  • the system task includes any one or more of the application program, the service process or the system function. That is to say, the system task currently being executed by the smart terminal may not be only one type, and there may be Many kinds.
  • smart terminals such as mobile phones
  • WeChat and NetEase Cloud Music that is, users use NetEase Cloud Music to listen to songs while using WeChat to chat with friends.
  • the GPS positioning service is still running in the background of the smart terminal, and the GPS positioning service obtains the position information of the smart terminal in real time.
  • the system tasks being executed by the smart terminal include at least WeChat applications, NetEase Cloud Music, and GPS positioning services. When the smart terminal performs these system tasks, the terminal system needs to read and write the memory in order to store the data.
  • the memory read and write data of the terminal system includes data of multiple dimensions, in order to more accurately determine the working mode of the memory according to the memory read and write data in the subsequent steps, this embodiment needs to accurately obtain the memory read and write data.
  • the terminal system itself will also perform read and write operations on the memory during operation, and the system task itself will also perform read and write operations on the memory after it is started. For example, WeChat reads and writes to the memory when it is running to save data.
  • the system tasks will also read and write memory. For example, WeChat will open the camera function during operation, and the camera function will read and write the memory.
  • the memory read and write data in this embodiment includes the data that the terminal system reads and writes to the memory itself when the system task starts, the data that reads and writes the memory itself when the system task starts, and the data that the terminal system is performing system tasks. When the system task reads and writes data to the memory.
  • this embodiment is to improve the resource utilization of the memory by adjusting the operating frequency of the memory, and the operating frequency of the memory is generally measured based on the read and write speed of the memory.
  • the system task is determined, first, according to the system task, the read and write peak speed data corresponding to the system task and the terminal system itself at startup are obtained. Then, obtain the instantaneous read and write speed data of the system task to the memory when the terminal system is performing the system task.
  • the memory read and write data includes the read and write peak speed data when the terminal system is started, the read and write peak speed data when the system task is started, and the instantaneous read and write speed data when the system task is executed.
  • the main method when obtaining the read and write peak speed data corresponding to the system task and the terminal system startup, the main method is to obtain a preset memory read and write data table.
  • the memory read and write data table is established in advance according to the system tasks and the read and write data of the terminal system to the memory. Therefore, the memory data table stores the reading and writing peak speed data corresponding to the system task and the reading and writing peak speed data corresponding to the terminal system. That is, according to the memory data table, the highest reading and writing data of each system task to the memory can be determined as well as The highest read and write data of the terminal system to the memory.
  • the system tasks include: any one or more of applications, service processes, or system functions.
  • the memory read and write data table stores the read and write peak speed data corresponding to the application, the read and write peak speed data corresponding to the service process, the read and write peak speed data corresponding to the system function, and the read and write peak speed data corresponding to the terminal system.
  • the memory read and write data table can quickly determine the read and write peak speed data corresponding to the system task and the terminal system.
  • the memory read-write data table is preset and can be called at any time.
  • this embodiment uses the CPU to read the peak speed of the terminal system to read and write the memory by controlling the memory controller in the memory control module (that is, to obtain the corresponding terminal system Read and write peak speed data), and the highest read and write speed of the memory when each application, service process, and system function is started (that is, get the peak read and write speed data corresponding to the system), and record it to form a memory read and write data table,
  • Table 1 includes system tasks (that is, any one or more of applications, service processes, or system functions) and the corresponding read and write peak speed data of the terminal system.
  • the system task when the system task being executed by the smart terminal is obtained, the system task can be matched with the memory read and write data table and the terminal system can be matched with the memory read and write data table.
  • the data processing module is used to query the memory read data table according to the system task (that is, the above table 1) to determine the read and write peak speed data corresponding to the system task (that is, the application, the service process, or the system function), and then read the data from the memory. Read the data table (that is, the above table 1) to obtain the corresponding reading and writing peak speed data when the terminal system is started.
  • the peak reading and writing speed data corresponding to WeChat application is 12MB/s; NetEase Cloud Music corresponds to The reading and writing peak speed data is 5MB/s; the reading and writing peak speed data corresponding to GPS positioning service is 42MB/s, and the reading and writing peak speed data corresponding to the terminal system can be obtained as 4520MB/s.
  • this embodiment obtains the instantaneous reading and writing speed data of the memory by the system task when the terminal system is executing the system task.
  • the CPU in this embodiment can also read the instantaneous read and write speed data generated by the system task during the running process through the memory controller of the memory control module.
  • the instantaneous read and write speed of the memory may be different due to the bandwidth speed. Therefore, in this embodiment, the instantaneous read and write speed data is acquired through real-time collection. For example, when the camera function is turned on in WeChat, the camera function will read and write to the memory. At this time, the instantaneous read and write speed data of the memory can be obtained. The instantaneous read and write speed of the memory.
  • Step S200 Determine the working mode of the memory according to the read and write data of the memory.
  • this embodiment can analyze the memory read and write data after acquiring the memory read and write data, and give the memory read and write data to determine the working mode of the memory.
  • the working mode of the memory indicates the frequency at which the memory runs as the working frequency.
  • the working mode of the memory includes the same frequency working mode and the different frequency working mode.
  • the same frequency working mode means that all memory particles in the memory use the same frequency as the working frequency.
  • the inter-frequency working mode means that the memory particles all use their corresponding frequencies as the working frequency.
  • determining the working mode of the memory is to adjust the working frequency of the memory according to the working mode, so as to maximize the performance of the memory and improve the utilization of resources.
  • the working mode of the memory there are the same frequency working mode and the different frequency working mode.
  • step S200 in this embodiment includes the following steps:
  • Step S201 Obtain preset peak speed data of the same frequency bandwidth, where the peak speed data of the same frequency bandwidth is used to reflect the instantaneous read and write speeds of different types of memory particles in the memory at the same frequency;
  • Step S202 If the memory read and write data is greater than the peak speed data of the same frequency bandwidth, the working mode of the memory is set to the different frequency working mode;
  • Step S203 If the memory read and write data is less than the peak speed data of the same frequency bandwidth, the working mode of the memory is set to the same frequency working mode.
  • this embodiment compares the memory read and write data with the same-frequency bandwidth peak speed data after determining the memory read and write data, so as to determine the operating mode of the memory according to the comparison result.
  • the peak speed data of the same frequency bandwidth is preset and can be retrieved at any time.
  • the peak speed data of the same frequency bandwidth is used to reflect the instantaneous read and write speeds of different types of memory particles in the memory at the same frequency.
  • the peak speed data of the same frequency bandwidth is used to measure and determine whether the memory should use the same frequency operating mode as the memory operating mode or the different frequency operating mode as the memory operating mode.
  • the CPU schedules the startup and exit of all applications or service processes in advance, and reads the bandwidth data of the memory by controlling the memory controller. Since there may be multiple memory particles in the memory, the memory can be controlled.
  • the controller obtains the instantaneous speed of reading and writing of different memory particles when the application or service process starts and exits, and then sets these memory particles in the same frequency working mode, so that the peak bandwidth of the memory in the same frequency working mode can be obtained Speed, that is, the peak speed data of the same frequency bandwidth is obtained.
  • the memory read and write data is greater than the peak speed data of the same frequency bandwidth, it means that the application or service process running in the smart terminal at this time has a greater demand for memory resources, and if the same frequency working mode is adopted, the terminal system will be The memory particle with the lower frequency performs memory read and write operations at the frequency corresponding to it. For many memory particles higher than the lowest frequency, the maximum performance cannot be exerted, which will result in a waste of memory resources.
  • the working mode of the memory is set to the different frequency working mode, so that the memory particles in the memory can work at different working frequencies. In order to maximize performance.
  • the memory read and write data is less than the peak speed data of the same frequency bandwidth, it means that the application or service process running in the smart terminal at this time does not have a large demand for memory resources, and the working mode of the memory is set to the same frequency working mode , Which is to make all the memory particles in the memory work at the same operating frequency.
  • the memory read and write data is 5532M/s
  • the preset peak speed data of the same frequency bandwidth is 4509M/s
  • the read and write data of the memory is greater than the peak speed data of the same frequency bandwidth
  • the working mode of the memory is set to Inter-frequency working mode.
  • the memory read and write data is 4032M/s, it means that the memory read and write data is less than the peak speed data of the same frequency bandwidth, and the working mode of the memory is set to the same frequency working mode.
  • Step S300 Adjust the operating frequency of the memory according to the operating mode.
  • the memory read and write data is used to determine the operating information generated during the actual operation of the terminal system. Therefore, in this embodiment, the operating frequency of the memory is adjusted according to the operating mode, so that the operating frequency of the memory is adjusted according to the operating information, thereby achieving the effect of dynamically adjusting the operating frequency of the memory to maximize the performance of the memory and improve Memory utilization efficiency.
  • step S300 specifically includes:
  • Step S301 When the working mode of the memory is the same-frequency working mode, obtain the frequencies corresponding to all the memory particles in the memory, determine the lowest frequency from the frequencies corresponding to all the memory particles, and use the lowest frequency as the value of all the memory particles in the memory. working frequency;
  • Step S302 When the working mode of the memory is the inter-frequency working mode, control all the memory particles in the memory to use their respective corresponding frequencies as the working frequencies.
  • the same-frequency working mode in this embodiment means that the control terminal system will perform memory read and write operations at the frequency corresponding to the memory particle with the lower frequency.
  • Inter-frequency working mode means that all memory particles in the memory work at different working frequencies. Therefore, when the working mode of the memory in this embodiment is the same-frequency working mode, the frequencies corresponding to all memory particles in the memory are acquired. Then determine the lowest frequency from the frequencies corresponding to all memory particles, and then use the lowest frequency as the operating frequency of all memory particles in the memory to ensure that all memory particles in the memory have the same operating frequency, and the operating frequency is still in all memory particles The lowest frequency.
  • the working mode of the memory is the inter-frequency working mode, all the memory particles in the control memory are controlled to use their corresponding frequencies as the working frequency, so that each memory particle can exert maximum performance and make full use of memory resources.
  • the memory in this example contains memory particles with model DDR3-2133 and memory particles with model DDR4-2666, and the corresponding frequency of memory particles with model DDR3-2133 is lower than that of model DDR4 The frequency corresponding to the memory particles of -2666. If the working mode of the memory is the same frequency working mode, the two types of memory particles are controlled to work with the frequency corresponding to the memory particles of the model DDR3-2133 as the working frequency. And if the working mode of the memory is the inter-frequency working mode, the memory particles with the control model of DDR3-2133 and the memory particles with the model of DDR4-2666 will work with their respective corresponding frequencies as the operating frequencies.
  • this embodiment first determines the memory read and write data of the terminal system according to the operating information of the smart terminal. Since the operating information reflects the information generated during the operation of the terminal system, according to the operating information, the read and write speed of the memory during the operation of the terminal system can be determined, that is, the memory read and write data can be obtained. Then according to the memory read and write data, determine the working mode of the memory, and finally adjust the working frequency of the memory according to the memory working mode. Since the working mode in this embodiment is determined based on the memory read and write data, and the memory read and write data is obtained based on the operation information of the smart terminal, it can be seen that the working mode in this embodiment is based on the actual operation of the terminal system. The operation information generated in the process is determined.
  • adjusting the working frequency of the memory according to the working mode can make the working frequency of the memory be adjusted according to the operating information, so as to realize the effect of dynamically adjusting the working frequency of the memory, so as to maximize the performance of the memory and improve the utilization of the memory. efficient.
  • an embodiment of the present application provides a memory operating frequency adjustment device, which includes: a data acquisition unit 10, a mode determination unit 20, and a frequency adjustment unit 30.
  • the data acquisition unit 10 is used to determine the memory read and write data of the terminal system according to the operating information of the smart terminal.
  • the operating information is used to reflect the information generated during the operation of the terminal system
  • the memory read and write data is used to reflect the terminal The read and write speed of the system to the memory.
  • the mode determining unit 20 is configured to determine the working mode of the memory according to the read and write data of the memory.
  • the frequency adjustment unit 30 is configured to adjust the operating frequency of the memory according to the operating mode.
  • the present application also provides an intelligent terminal, the principle block diagram of which may be as shown in FIG. 7.
  • the intelligent terminal includes a processor, a memory, a network interface, a display screen, and a temperature sensor connected through a system bus.
  • the processor of the smart terminal is used to provide calculation and control capabilities.
  • the memory of the smart terminal includes a non-volatile storage medium and an internal memory.
  • the non-volatile storage medium stores an operating system and a computer program.
  • the internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage medium.
  • the network interface of the smart terminal is used to communicate with an external terminal through a network connection.
  • the display screen of the smart terminal may be a liquid crystal display screen or an electronic ink display screen, and the temperature sensor of the smart terminal is preset inside the smart terminal to detect the operating temperature of the internal device.
  • FIG. 7 is only a block diagram of part of the structure related to the solution of the present application, and does not constitute a limitation on the smart terminal to which the solution of the present application is applied.
  • the specific smart terminal It may include more or fewer components than shown in the figures, or combine certain components, or have a different component arrangement.
  • an intelligent terminal including a memory, and one or more programs.
  • One or more programs are stored in the memory and configured to be executed by one or more processors. More than one program contains instructions for the following operations:
  • the operating information of the intelligent terminal determine the memory read and write data of the terminal system.
  • the operating information is used to reflect the information generated by the terminal system during operation, and the memory read and write data is used to reflect the read and write speed of the terminal system to the memory;
  • the working frequency of the memory is adjusted.
  • Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM), or flash memory.
  • Volatile memory may include random access memory (RAM) or external cache memory.
  • RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous chain Channel (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM), etc.
  • this application discloses a method for adjusting the operating frequency of a memory, an intelligent terminal, and a storage medium.
  • the method includes: determining the memory read and write data of the terminal system according to the operating information of the intelligent terminal, and the operating information is used to reflect that the terminal system is running The information generated in the process, the memory read and write data is used to reflect the terminal system's read and write speed of the memory; according to the memory read and write data, determine the working mode of the memory; according to the working mode, adjust the working frequency of the memory.
  • This application obtains the memory read data of the terminal system according to the operating information of the smart terminal, then determines the working mode of the memory according to the memory read data, and finally adjusts the working frequency of the memory according to the working mode to maximize the memory Performance improves the utilization of memory.

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Abstract

本申请公开了一种内存的工作频率调整方法、智能终端及存储介质，包括：根据智能终端的运行信息，确定终端系统的内存读写数据；根据内存读写数据确定内存的工作模式；根据工作模式对内存的工作频率进行调整。本申请根据终端系统的内存读取数据确定内存的工作模式，根据工作模式对内存的工作频率进行调整，提升了内存的利用率。

Description

一种内存的工作频率调整方法、智能终端及存储介质 技术领域
本申请属于内存控制的技术领域，尤其涉及的是一种内存的工作频率调整方法、智能终端及存储介质。
 背景技术
随着目前嵌入式设备的发展，嵌入式系统的对设备硬件的要求越来越高。由于目前很多的芯片处于对性能、成本和功耗的考虑，会在芯片内集成了内存颗粒。但是由于对容量和性能的需求，在实际应用过程中，会使用不同频率的内存颗粒的组合方案。
 技术问题
现有技术中，终端系统在运行时，会以频率低的那个内存颗粒对应的频率进行内存读写操作，那么频率高的内存颗粒的性能没有得到充分发挥，导致内存利用效率不高，浪费了内存资源。因此，现有技术还有待改进和发展。
 技术解决方案
本申请实施例针对现有技术的上述缺陷，提供一种内存的工作频率调整方法、智能终端及存储介质，旨在解决现有技术中内存利用效率不高，浪费了内存资源的问题。
第一方面，本申请实施例提供一种内存的工作频率调整方法，其中，所述方法包括：
根据智能终端的运行信息，确定终端系统的内存读写数据，所述运行信息用于反映所述终端系统在运行过程中所产生的信息，所述内存读写数据用于反映所述终端系统对内存的读写速度；
根据所述内存读写数据，确定内存的工作模式；
根据所述工作模式，对所述内存的工作频率进行调整。
在一种实施方式中，所述根据智能终端的运行信息，确定终端系统的内存读写速度数据，包括：
获取所述智能终端的运行信息；
根据所述运行信息，获取所述终端系统处于运行中的系统任务，所述系统任务包括应用程序、服务进程或者系统功能中的任意一种或多种；
根据所述系统任务，确定所述终端系统的内存读写速度数据。
在一种实施方式中，所述根据所述系统任务，确定所述终端系统的内存读写速度数据，包括：
根据所述系统任务，获取所述系统任务与所述终端系统启动时对应的读写峰值速度数据，所述读写峰值速度数据用于反映所述系统任务与所述终端系统在启动时自身对内存的最高读写速度；
获取所述终端系统在执行所述系统任务时，所述系统任务对所述内存的瞬时读写速度数据；
根据所述读写峰值速度数据以及所述瞬时读写速度数据，确定所述内存读写数据。
在一种实施方式中，所述根据所述系统任务，获取所述系统任务与所述终端系统启动时对应的读写峰值速度数据，包括：
获取预设的内存读写数据表，所述内存读写数据表存储有所述应用程序对应的读写峰值速度数据、所述服务进程对应的读写峰值速度数据、所述系统功能对应的读写峰值速度数据以及所述终端系统对应的读写峰值速度数据；
根据所述内存读写数据表，分别获取所述系统任务以及所述终端系统对应的读写峰值速度数据。
在一种实施方式中，所述根据所述内存读写数据表，分别获取所述系统任务以及所述终端系统对应的读写峰值速度数据，包括：
将所述系统任务与所述内存读写数据表进行匹配以及将所述终端系统与所述内存读写数据表进行匹配；
分别获取所述系统任务中所述应用程序、所述服务进程或者所述系统功能所对应的读写峰值速度数据，以及所述终端系统对应的读写峰值速度数据。
在一种实施方式中，所述根据所述读写峰值速度数据以及所述瞬时读写速度数据，确定所述内存读写数据，包括：
将所述读写峰值速度数据与所述瞬时读写速度数据求和，得到所述内存读写数据。
在一种实施方式中，所述根据所述内存读写数据，确定内存的工作模式，包括：
获取预设的同频带宽峰值速度数据，所述同频带宽峰值速度数据用于反映所述内存中不同型号的内存颗粒在相同频率下的瞬时读写速度；
若所述内存读写数据大于所述同频带宽峰值速度数据，则将所述内存的工作模式设置为异频工作模式；
若所述内存读写数据小于所述同频带宽峰值速度数据，则将所述内存的工作模式设置为同频工作模式。
在一种实施方式中，所述根据所述工作模式，对所述内存的工作频率进行调整，包括：
当所述内存的工作模式为同频工作模式时，则获取所述内存中所有内存颗粒对应的频率，从所有内存颗粒对应的频率中确定出最低频率，并将所述最低频率作为所述内存中所有内存颗粒的工作频率；
当所述内存的工作模式为异频工作模式时，则控制所述内存中的所有内存颗粒均以各自对应的频率作为工作频率。
第二方面，本申请实施例提供了一种智能终端，包括有存储器，以及一个或者一个以上的程序，其中一个或者一个以上程序存储于存储器中，且经配置以由一个或者一个以上处理器执行所述一个或者一个以上程序包含用于执行如上述任意一项所述的内存的工作频率调整方法。
第三方面，本申请实施例提供了一种非临时性计算机可读存储介质，当所述存储介质中的指令由电子设备的处理器执行时，使得电子设备能够执行如上述中任意一项所述的内存的工作频率调整方法。
 有益效果
本实施例首先根据智能终端的运行信息，确定终端系统的内存读写数据。由于所述运行信息反映的是所述反映所述终端系统在运行过程中所产生的信息，因此根据所述运行信息，就可以确定所述终端系统在运行的过程中对内存的读写速度，即得到所述内存读写数据。然后根据所述内存读写数据，确定内存的工作模式，最后根据所述内存工作模式来对所述内存的工作频率进行调整。由于本实施例中的工作模式是基于所述内存读写数据确定的，而所述内存读写数据是基于智能终端的运行信息得到的，由此可见，本实施例中的工作模式是根据所述终端系统在实际运行过程中所产生的运行信息来确定的。这样根据所述工作模式来对内存的工作频率进行调整，就可以使得内存的工作频率是按照运行信息来调整的，从而实现动态调整所述内存的工作频率的效果，以发挥所述内存的最大性能，提升所述内存的利用效率。
 附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其有益效果显而易见。
图1是本申请实施例提供的内存的工作频率调整方法的流程示意图。
图2是本申请实施例提供的内存的工作频率调整方法中获取内存读写数据的流程示意图。
图3是本申请实施例提供的内存的工作频率调整方法中确定工作模式的流程示意图。
图4是本申请实施例提供的内存的工作频率调整方法中调整内存的工作频率的流程示意图。
图5是本申请实施例提供的内存的工作频率调整装置的原理图。
图6是本申请实施例提供的内存的工作频率调整装置中具体应用实施例中的各模块之间的原理图。
图7是本申请实施例提供的智能终端的内部结构原理框图。
 本发明的实施方式
为使本申请的目的、技术方案及优点更加清楚、明确，以下参照附图并举实施例对本申请进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
需要说明，若本申请实施例中有涉及方向性指示(诸如上、下、左、右、前、后……)，则该方向性指示仅用于解释在某一特定姿态(如附图所示)下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
经研究人员发现，随着目前嵌入式设备的发展，嵌入式系统的对设备硬件的要求越来越高。由于目前很多的芯片处于对性能、成本和功耗的考虑，会在芯片内集成了内存颗粒。但是由于对容量和性能的需求，在实际应用过程中，会使用不同频率的内存颗粒的组合方案。比如型号为DDR3的内存颗粒的最大容量为512M，而在实际应用过程中，可能会选择外挂型号为DDR4的内存颗粒或者其他型号的内存颗粒，且也有可能是内置型号为DDR3-2133的内存颗粒和外挂型号为DDR4-2666的内存颗粒的组合，这样就使得存在不同频率的内存颗粒的组合。而现有技术中，终端系统在运行时，会以频率低的那个内存颗粒对应的频率进行内存读写操作，那么频率高的内存颗粒的性能没有得到充分发挥，导致内存利用效率不高，浪费了内存资源。比如，当存在型号为DDR3-2133的内存颗粒和外挂型号为DDR4-2666的内存颗粒的组合时，终端系统使用型号为DDR3-2133的内存颗粒对应的频率来对所有的内存颗粒进行读写操作，这样使得型号为DDR4-2666的内存颗粒无法发挥最大的性能，造成资源的浪费。
为了解决现有技术中的问题，本实施例提供一种内存的工作频率调整方法，通过本实施例中的内存的工作频率调整方法，以发挥内存的最大性能，提升内存的利用效率。具体地，本实施例首先根据智能终端的运行信息，确定终端系统的内存读写数据。由于运行信息反映的是反映终端系统在运行过程中所产生的信息，因此根据运行信息，就可以确定终端系统在运行的过程中对内存的读写速度，即得到内存读写数据。然后根据内存读写数据，确定内存的工作模式，最后根据内存工作模式来对内存的工作频率进行调整。由于本实施例中的工作模式是基于内存读写数据确定的，而内存读写数据是基于智能终端的运行信息得到的，由此可见，本实施例中的工作模式是根据终端系统在实际运行过程中所产生的运行信息来确定的。这样根据工作模式来对内存的工作频率进行调整，就可以使得内存的工作频率是按照运行信息来调整的，从而实现动态调整内存的工作频率的效果。相对于现有技术中的终端系统是以频率低的那个内存颗粒对应的频率进行内存读写操作，本实施例可以以发挥内存的最大性能，提升内存的利用效率。
举例说明，当智能终端在运行时获取智能终端的运行信息，然后根据运行信息，获取终端系统对内存的读写速度，即得到终端系统的内存读写数据。然后根据内存读写数据，确定内存的工作模式，比如同步频率工作模式或者异步频率工作模式。最后基于工作模式，来对内存的工作频率进行调整。比如，若内存为型号为DDR3-2133的内存颗粒和外挂型号为DDR4-2666内存颗粒的组合方案时，本例中就可以基于运行信息得到内存读写数据，然后确定出工作模式，在根据工作模式来对型号为DDR3-2133的内存颗粒和外挂型号为DDR4-2666内存颗粒工作频率进行调整，从而发挥型号为DDR3-2133的内存颗粒和外挂型号为DDR4-2666内存颗粒的最大性能，提高资源的利用率。
示例性方法：
本实施例中提供一种内存的工作频率调整方法，方法应用于智能终端中，具体如图1中所示，方法包括：
步骤S100、根据智能终端的运行信息，确定终端系统的内存读写数据，运行信息用于反映终端系统在运行过程中所产生的信息，内存读写数据用于反映终端系统对内存的读写速度。
具体实施时，由于智能终端在运行过程中会产生运行信息，该运行信息可以反映出智能终端在运行过程中以及执行系统任务的过程中所产生的信息，这些运行信息可以是智能终端在运行过程中所占的存储内存数据。又或是智能终端在运行某个应用程序时，该应用程序的名称信息、该应用程序对内存的读写数据以及该应用程序的运行记录数据等。因此根据运行信息就可以确定智能终端此时正在执行的系统任务是什么。比如，当对运行信息进行分析后，得到微信的聊天记录数据在不断增加，因此通过这些聊天记录数据，则就可确定出智能终端当前正在执行的系统任务为运行微信。而智能终端执行系统任务时会对内存进行读写操作，因此本实施例中可以获取终端系统在执行系统任务的过程中的内存读写数据，该内存读写数据是终端系统对内存进行读写操作时的数据，因此内存读写数据就可以反映出终端系统对内存的读写速度。比如，当智能终端启动的某个应用程序时，就会产生有关启动该应用程序的运行信息，该运行信息就包括终端系统在启动应用程序以及后续的运行应用程序时的内存读写数据，因此根据该运行信息就可得到内存读写数据。
在一种实施方式中，如图2中所示，本实施例在获取内存读写数据时包括以下步骤：
步骤S101、获取智能终端的运行信息；
步骤S102、根据运行信息，获取终端系统处于运行中的系统任务，系统任务包括应用程序、服务进程或者系统功能中的任意一种或多种；
步骤S103、根据系统任务，确定终端系统的内存读写速度数据。
具体实施时，由于终端系统的内存读写数据是与智能终端的运行信息有关的，因此本实施例首先需要获取智能终端的运行信息，然后根据运行信息获取到智能终端正在执行的系统任务，由于智能终端在执行系统任务时会对内存进行读写操作，因此本实施例就可以根据系统任务获取到终端系统的内存读写速度数据。在一种实施方式中，系统任务包括应用程序、服务进程或者系统功能中的任意一种或多种，也就是说，智能终端此时正在执行的系统任务可能并不是只有一种，可能会有多种。比如，智能终端（如手机）正在运行的是微信以及网易云音乐，即用户一边使用网易云音乐听歌，一边使用微信和朋友聊天。此外智能终端后台还在运行的是GPS定位服务，该GPS定位服务实时获取到智能终端的位置信息。可见，智能终端正在执行中的系统任务至少包括有微信应用、网易云音乐以及GPS定位服务。而智能终端在执行这些系统任务的时候，终端系统是需要对内存进行读写操作，以便将对数据进行存储。
由于终端系统的内存读写数据是包括有多个维度的数据的，为了后续步骤中可以更准确地根据内存读写数据确定内存的工作模式，本实施例需要准确获取内存读写数据。具体地，终端系统在运行的过程中其本身对内存也会进行读写操作，而系统任务在启动后自身也会对内存进行读写操作。比如微信本身在运行的时候就会对内存进行读写，以保存数据。此外，终端系统在执行系统任务时，系统任务也会对内存进行读写操作，比如微信在运行过程中会打开相机功能，相机功能就会对内存进行读写操作。由此可见，本实施例中的内存读写数据包括有终端系统启动时本身对内存进行读写操作的数据、系统任务启动时自身对内存进行读写操作的数据以及获取终端系统在执行系统任务时，系统任务对内存进行读写操作的数据。
在一种实施方式中，本实施例是为了通过调整内存的工作频率来提升内存的资源利用率，而对于内存的工作频率来说，一般都是基于对内存的读写速度来衡量。一般来说，对内存的读写速度更快，则对应的所需要的工作频率也越高。因此，为了更准确地对工作频率进行调整，本实施例在获取内存读取数据时获取的是对内存的读取速度。具体地，本实施例在确定出系统任务后，首先，根据系统任务，获取系统任务与终端系统在启动时自身对应的读写峰值速度数据。然后，获取终端系统在执行系统任务时，系统任务对内存的瞬时读写速度数据。最后，根据读写峰值速度数据以及瞬时读写速度数据，确定内存读写数据。也就是说，内存读写数据中包括有终端系统启动时的读写峰值速度数据、系统任务启动时的读写峰值速度数据以及系统任务执行时的瞬时读写速度数据。
具体应用时，本实施例中获取系统任务与终端系统启动时对应的读写峰值速度数据时，主要是通过获取预设的内存读写数据表。内存读写数据表是预先根据系统任务以及终端系统对内存的读写数据来建立的。因此内存数据表中是存储有系统任务对应的读写峰值速度数据以及终端系统对应的读写峰值速度数据，即根据内存数据表就可求确定出每一个系统任务对内存的最高读写数据以及终端系统对内存的最高读写数据。而由于系统任务包括：应用程序、服务进程或者系统功能中的任意一种或多种。因此，内存读写数据表存储有应用程序对应的读写峰值速度数据、服务进程对应的读写峰值速度数据、系统功能对应的读写峰值速度数据以及终端系统对应的读写峰值速度数据，根据该内存读写数据表，就可以快速确定系统任务与终端系统对应的读写峰值速度数据。在一种实施方式中，内存读写数据表是预先设置的，并且可以随时进行调用。在设置内存读写数据表时，如图6中所示，本实施例利用CPU通过控制内存控制模块中的内存控制器来读取终端系统对内存读写的峰值速度（即得到终端系统对应的读写峰值速度数据），及每个应用程序、服务进程以及系统功能启动时对内存的最高读写速度（即得到系统对应的读写峰值速度数据），并记录下来形成内存读写数据表，具体如下表一所示，表1中包括有系统任务（即应用程序、服务进程或者系统功能中的任意一种或多种）以及终端系统对应的读写峰值速度数据。
表一
序号 名称 读写峰值速度
1 终端系统 4520MB/s
2 通信服务 20 MB/s
3 GPS定位服务 42MB/s
4 微信应用 12MB/s
5 网易云音乐 5MB/s
… … …
n xx功能 35MB/s
因此，当获取到智能终端正在执行的系统任务后，即可将系统任务与内存读写数据表进行匹配以及终端系统与内存读写数据表进行匹配。本实施例利用数据处理模块根据系统任务来查询内存读取数据表（即上述表一）来确定系统任务（即应用程序、服务进程或者系统功能）对应的读写峰值速度数据，进而再从内存读取数据表（即上述表一）获取终端系统启动时本身对应的读写峰值速度数据。比如，若智能终端中正在执行的系统任务为微信应用、网易云音乐、GPS定位服务，则根据上述表一即可得到微信应用对应的读写峰值速度数据为12MB/s；网易云音乐对应的读写峰值速度数据为5MB/s；GPS定位服务对应的读写峰值速度数据为42MB/s，并且还可以获取到终端系统对应的读写峰值速度数据为4520MB/s。
当获取到终端系统以及系统任务所对应的读写峰值速度数据后，本实施例再获取终端系统在执行系统任务时，系统任务对内存的瞬时读写速度数据。具体地，如图6中所示，本实施例中的CPU同样可以通过内存控制模块的内存控制器来读取系统任务在运行过程中所产生的瞬时读写速度数据，由于系统任务在运行过程中对内存的瞬时读写速度可能会因为带宽的速度而不相同，因此本实施例是通过实时采集的方式来获取瞬时读写速度数据的。比如，当微信打开相机功能，该相机功能就会对内存进行读写操作，此时就可获取到对内存的瞬时读写速度数据，该瞬时读写速度数据即为系统任务在运行过程中对内存的瞬时读写速度。
当获取到读写峰值速度数据以及瞬时读写速度数据后，本实施例将读写峰值速度数据与瞬时读写速度数据求和，得到内存读写数据。比如，若终端系统对应的读写峰值速度数据为S1、系统任务对应的读写峰值速度数据为S2、系统任务在运行过程中的瞬时读写速度数据为S3，则内存读写数据即为S=S1+S2+S3。
步骤S200、根据内存读写数据，确定内存的工作模式。
具体实施时，本实施例在获取到内存读写数据后，即可对内存读写数据进行分析，并给予内存读写数据来确定内存的工作模式。内存的工作模式表示的是内存以何种频率作为工作频率来运行。内存的工作模式包括有同频工作模式以及异频工作模式。同频工作模式即为内存中所有的内存颗粒均以相同频率作为工作频率。异频工作模式即为内存颗粒均以各自对应的频率作为工作频率。本实施例中，确定内存的工作模式是为了根据工作模式来对内存的工作频率进行调整，以便发挥内存的最大性能，提高资源的利用率。而对于内存的工作模式来说，包括有同频工作模式以及异频工作模式。
在一种实施方式中，如图3中所示，本实施例中步骤S200包括如下步骤：
步骤S201、获取预设的同频带宽峰值速度数据，同频带宽峰值速度数据用于反映内存中不同型号的内存颗粒在相同频率下的瞬时读写速度；
步骤S202、若内存读写数据大于同频带宽峰值速度数据，则将内存的工作模式设置为异频工作模式；
步骤S203、若内存读写数据小于同频带宽峰值速度数据，则将内存的工作模式设置为同频工作模式。
具体实施时，本实施例在确定内存读写数据后将内存读写数据与同频带宽峰值速度数据进行比较，以根据比较结果来确定内存的工作模式。在一种实施方式中，同频带宽峰值速度数据是预先设置的，并且可以随时对其进行调取。同频带宽峰值速度数据用于反映内存中不同型号的内存颗粒在相同频率下的瞬时读写速度。本实施例中同频带宽峰值速度数据是用来衡量与确定内存应该以同频工作模式作为内存的工作模式还是应该以异频工作模式作为内存的工作模式。具体地，本实施例预先通过CPU调度所有应用程序或服务进程等的启动和退出，并通过控制内存控制器来读取内存的带宽数据，由于内存中可能存在多个内存颗粒，因此可以控制内存控制器获取不同内存颗粒在应用程序或服务进程等的启动和退出时的读写瞬时速度，然后设置这些内存颗粒处于同频工作模式，这样就可以获取到内存在同频工作模式下的带宽峰值速度，即得到同频带宽峰值速度数据。若内存读写数据大于同频带宽峰值速度数据时，则表示此时智能终端中正在运行的应用程序或者服务进程对内存资源的需求较大，而如果采用同频工作模式，即终端系统会以频率低的那个内存颗粒对应的频率进行内存读写操作，那对于很多高于最低频率的内存颗粒是无法发挥最大性能的，因此会导致内存资源的浪费。为了解决该问题，本实施例在内存读写数据大于同频带宽峰值速度数据时，将内存的工作模式设置为异频工作模式，这样可以使得内存中的内存颗粒以不同的工作频率进行工作，以发挥出最大的性能。而若内存读写数据小于同频带宽峰值速度数据，则表示此时智能终端中正在运行的应用程序或者服务进程对内存资源的需求不大，则就将内存的工作模式设置为同频工作模式，也就是使得内存中的所有内存颗粒以相同的工作频率工作。
比如，当内存读写数据为5532M/s，而预设的同频带宽峰值速度数据为4509M/s，则就说明内存读写数据大于同频带宽峰值速度数据，则将内存的工作模式设置为异频工作模式。而当内存读写数据为4032M/s，则就说明内存读写数据小于同频带宽峰值速度数据，则将内存的工作模式设置为同频工作模式。
步骤S300、根据工作模式，对内存的工作频率进行调整。
由于本实施例中的工作模式是基于的内存读写数据来确定的，而内存读写数据用于基于终端系统在实际运行过程中所产生的运行信息来确定的。因此本实施例根据工作模式来对内存的工作频率进行调整，就可以使得内存的工作频率是按照运行信息来调整的，从而实现动态调整内存的工作频率的效果，以发挥内存的最大性能，提升内存的利用效率。
在一种实施方式中，如图4中所示，步骤S300具体包括：
步骤S301、当内存的工作模式为同频工作模式时，则获取内存中所有内存颗粒对应的频率，从所有内存颗粒对应的频率中确定出最低频率，并将最低频率作为内存中所有内存颗粒的工作频率；
步骤S302、当内存的工作模式为异频工作模式时，则控制内存中的所有内存颗粒均以各自对应的频率作为工作频率。
具体实施时，本实施例中的同频工作模式即为控制终端系统会以频率低的那个内存颗粒对应的频率进行内存读写操作。异频工作模式即为内存中的所有内存颗粒以不同的工作频率工作。因此，当本实施例中的内存的工作模式为同频工作模式时，则获取内存中所有内存颗粒对应的频率。然后从所有内存颗粒对应的频率中确定出最低频率，接着将最低频率作为内存中所有内存颗粒的工作频率，从而保证内存中的所有内存颗粒的工作频率相同，并且工作频率还是所有的内存颗粒中的最低频率。而当内存的工作模式为异频工作模式时，则控制内存中的所有内存颗粒均以各自对应的频率作为工作频率，这样就可以使得每一个内存颗粒发挥最大性能，充分使用内存资源。
比如，如图6中所示，本例的内存中存在型号为DDR3-2133的内存颗粒以及型号为DDR4-2666的内存颗粒，并且型号为DDR3-2133的内存颗粒对应的频率低于型号为DDR4-2666的内存颗粒对应的频率。如果内存的工作模式为同频工作模式，则控制这两种型号的内存颗粒以型号为DDR3-2133的内存颗粒对应的频率作为工作频率进行工作。而如果内存的工作模式为异频工作模式，则控制型号为DDR3-2133的内存颗粒以及型号为DDR4-2666的内存颗粒均以各自对应的频率作为工作频率进行工作。
综上，本实施例首先根据智能终端的运行信息，确定终端系统的内存读写数据。由于运行信息反映的是终端系统在运行过程中所产生的信息，因此根据运行信息，就可以确定终端系统在运行的过程中对内存的读写速度，即得到内存读写数据。然后根据内存读写数据，确定内存的工作模式，最后根据内存工作模式来对内存的工作频率进行调整。由于本实施例中的工作模式是基于内存读写数据确定的，而内存读写数据是基于智能终端的运行信息得到的，由此可见，本实施例中的工作模式是根据终端系统在实际运行过程中所产生的运行信息来确定的。这样根据工作模式来对内存的工作频率进行调整，就可以使得内存的工作频率是按照运行信息来调整的，从而实现动态调整内存的工作频率的效果，以发挥内存的最大性能，提升内存的利用效率。
示例性设备：
如图6中所示，本申请实施例提供一种内存的工作频率调整装置，该装置包括：数据获取单元10、模式确定单元20、频率调整单元30。具体地，数据获取单元10，用于根据智能终端的运行信息，确定终端系统的内存读写数据，运行信息用于反映终端系统在运行过程中所产生的信息，内存读写数据用于反映终端系统对内存的读写速度。模式确定单元20，用于根据内存读写数据，确定内存的工作模式。频率调整单元30，用于根据工作模式，对内存的工作频率进行调整。
基于上述实施例，本申请还提供了一种智能终端，其原理框图可以如图7所示。该智能终端包括通过系统总线连接的处理器、存储器、网络接口、显示屏、温度传感器。其中，该智能终端的处理器用于提供计算和控制能力。该智能终端的存储器包括非易失性存储介质、内存储器。该非易失性存储介质存储有操作系统和计算机程序。该内存储器为非易失性存储介质中的操作系统和计算机程序的运行提供环境。该智能终端的网络接口用于与外部的终端通过网络连接通信。该计算机程序被处理器执行时以实现一种内存的工作频率调整方法。该智能终端的显示屏可以是液晶显示屏或者电子墨水显示屏，该智能终端的温度传感器是预先在智能终端内部设置，用于检测内部设备的运行温度。
本领域技术人员可以理解，图7中示出的原理框图，仅仅是与本申请方案相关的部分结构的框图，并不构成对本申请方案所应用于其上的智能终端的限定，具体的智能终端可以包括比图中所示更多或更少的部件，或者组合某些部件，或者具有不同的部件布置。
在一个实施例中，提供了一种智能终端，包括有存储器，以及一个或者一个以上的程序，其中一个或者一个以上程序存储于存储器中，且经配置以由一个或者一个以上处理器执行一个或者一个以上程序包含用于进行以下操作的指令：
根据智能终端的运行信息，确定终端系统的内存读写数据，运行信息用于反映终端系统在运行过程中所产生的信息，内存读写数据用于反映终端系统对内存的读写速度；
根据内存读写数据，确定内存的工作模式；
根据工作模式，对内存的工作频率进行调整。
本领域普通技术人员可以理解实现上述实施例方法中的全部或部分流程，是可以通过计算机程序来指令相关的硬件来完成，计算机程序可存储于一非易失性计算机可读取存储介质中，该计算机程序在执行时，可包括如上述各方法的实施例的流程。其中，本申请所提供的各实施例中所使用的对存储器、存储、数据库或其它介质的任何引用，均可包括非易失性和/或易失性存储器。非易失性存储器可包括只读存储器（ROM）、可编程ROM（PROM）、电可编程ROM（EPROM）、电可擦除可编程ROM（EEPROM）或闪存。易失性存储器可包括随机存取存储器（RAM）或者外部高速缓冲存储器。作为说明而非局限，RAM以多种形式可得，诸如静态RAM（SRAM）、动态RAM（DRAM）、同步DRAM（SDRAM）、双数据率SDRAM（DDRSDRAM）、增强型SDRAM（ESDRAM）、同步链路（Synchlink） DRAM（SLDRAM）、存储器总线（Rambus）直接RAM（RDRAM）、直接存储器总线动态RAM（DRDRAM）、以及存储器总线动态RAM（RDRAM）等。
综上，本申请公开了一种内存的工作频率调整方法、智能终端及存储介质，方法包括：根据智能终端的运行信息，确定终端系统的内存读写数据，运行信息用于反映终端系统在运行过程中所产生的信息，内存读写数据用于反映终端系统对内存的读写速度；根据内存读写数据，确定内存的工作模式；根据工作模式，对内存的工作频率进行调整。本申请通过根据智能终端的运行信息，获取到终端系统的内存读取数据，然后根据内存读取数据确定内存的工作模式，最后根据工作模式对内存的工作频率进行调整，以发挥出内存的最大性能，提升了内存的利用率。
应当理解的是，本申请的应用不限于上述的举例，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，所有这些改进和变换都应属于本申请所附权利要求的保护范围。

Claims (20)

  1. 一种内存的工作频率调整方法，其中，所述方法包括：
    根据智能终端的运行信息，确定终端系统的内存读写数据，所述运行信息用于反映所述终端系统在运行过程中所产生的信息，所述内存读写数据用于反映所述终端系统对内存的读写速度；
    根据所述内存读写数据，确定内存的工作模式；
    根据所述工作模式，对所述内存的工作频率进行调整。
  2. 根据权利要求1所述的内存的工作频率调整方法，其中，所述根据智能终端的运行信息，确定终端系统的内存读写速度数据，包括：
    获取所述智能终端的运行信息；
    根据所述运行信息，获取所述终端系统处于运行中的系统任务，所述系统任务包括应用程序、服务进程或者系统功能中的任意一种或多种；
    根据所述系统任务，确定所述终端系统的内存读写速度数据。
  3. 根据权利要求2所述的内存的工作频率调整方法，其中，所述根据所述系统任务，确定所述终端系统的内存读写速度数据，包括：
    根据所述系统任务，获取所述系统任务与所述终端系统启动时对应的读写峰值速度数据，所述读写峰值速度数据用于反映所述系统任务与所述终端系统在启动时自身对内存的最高读写速度；
    获取所述终端系统在执行所述系统任务时，所述系统任务对所述内存的瞬时读写速度数据；
    根据所述读写峰值速度数据以及所述瞬时读写速度数据，确定所述内存读写数据。
  4. 根据权利要求3所述的内存的工作频率调整方法，其中，所述根据所述读写峰值速度数据以及所述瞬时读写速度数据，确定所述内存读写数据，包括：
    将所述读写峰值速度数据与所述瞬时读写速度数据求和，得到所述内存读写数据。
  5. 根据权利要求3所述的内存的工作频率调整方法，其中，所述根据所述系统任务，获取所述系统任务与所述终端系统启动时对应的读写峰值速度数据，包括：
    获取预设的内存读写数据表，所述内存读写数据表存储有所述应用程序对应的读写峰值速度数据、所述服务进程对应的读写峰值速度数据、所述系统功能对应的读写峰值速度数据以及所述终端系统对应的读写峰值速度数据；
    根据所述内存读写数据表，分别获取所述系统任务以及所述终端系统对应的读写峰值速度数据。
  6. 根据权利要求5所述的内存的工作频率调整方法，其中，所述根据所述内存读写数据表，分别获取所述系统任务以及所述终端系统对应的读写峰值速度数据，包括：
    将所述系统任务与所述内存读写数据表进行匹配以及将所述终端系统与所述内存读写数据表进行匹配；
    分别获取所述系统任务中所述应用程序、所述服务进程或者所述系统功能所对应的读写峰值速度数据，以及所述终端系统对应的读写峰值速度数据。
  7. 根据权利要求6所述的内存的工作频率调整方法，其中，所述根据所述读写峰值速度数据以及所述瞬时读写速度数据，确定所述内存读写数据，包括：
    将所述读写峰值速度数据与所述瞬时读写速度数据求和，得到所述内存读写数据。
  8. 如权利要求5所述的内存的工作频率调整方法，其中，所述获取预设的内存读写数据表之前，还包括：
    读取所述终端系统对内存读写的峰值速度，以及终端系统中每个应用程序和每个服务进程的读写峰值速度数据，以及终端系统的系统功能启动时对内存的读写峰值速度数据；
    记录所述终端系统对内存读写的峰值速度，以及终端系统中每个应用程序和每个服务进程的读写峰值速度数据，以及终端系统的系统功能启动时对内存的读写峰值速度数据，形成所述内存读写数据表。
  9. 根据权利要求1所述的内存的工作频率调整方法，其中，所述根据所述内存读写数据，确定内存的工作模式，包括：
    获取预设的同频带宽峰值速度数据，所述同频带宽峰值速度数据用于反映所述内存中不同型号的内存颗粒在相同频率下的瞬时读写速度；
    将所述内存读写数据和所述同频带宽峰值速度数据进行比较，以根据比较结果确定所述内存的工作模式。
  10. 根据权利要求9所述的内存的工作频率调整方法，其中，所述将所述内存读写数据和所述同频带宽峰值速度数据进行比较，以根据比较结果确定所述内存的工作模式，包括：
    若所述内存读写数据大于所述同频带宽峰值速度数据，则将所述内存的工作模式设置为异频工作模式；
    若所述内存读写数据小于所述同频带宽峰值速度数据，则将所述内存的工作模式设置为同频工作模式。
  11. 根据权利要求10所述的内存的工作频率调整方法，其中，所述根据所述工作模式，对所述内存的工作频率进行调整，包括：
    当所述内存的工作模式为同频工作模式时，则获取所述内存中所有内存颗粒对应的频率，从所有内存颗粒对应的频率中确定出最低频率，并将所述最低频率作为所述内存中所有内存颗粒的工作频率；
    当所述内存的工作模式为异频工作模式时，则控制所述内存中的所有内存颗粒均以各自对应的频率作为工作频率。
  12. 根据权利要求11所述的内存的工作频率调整方法，其中，所述内存包括第一型号内存颗粒以及第二型号内存颗粒，且第一型号内存颗粒对应的频率低于第二型号内存颗粒；
    所述当所述内存的工作模式为同频工作模式时，则获取所述内存中所有内存颗粒对应的频率，从所有内存颗粒对应的频率中确定出最低频率，并将所述最低频率作为所述内存中所有内存颗粒的工作频率，包括：
    当所述内存的工作模式为同频工作模式时，控制第一型号内存颗粒和第二型号内存颗粒以第一型号内存颗粒对应的频率作为工作频率进行工作。
  13. 根据如权利要求12所述的内存的工作频率调整方法，其中，所述当所述内存的工作模式为异频工作模式时，则控制所述内存中的所有内存颗粒均以各自对应的频率作为工作频率，包括：
    所述当所述内存的工作模式为异频工作模式时，控制第一型号内存颗粒以及第二型号内存颗粒均以各自对应的频率作为工作频率进行工作。
  14. 一种内存的工作频率调整装置，其中，所述工作频率调整装备包括：
    数据获取单元，用于根据智能终端的运行信息，确定终端系统的内存读写数据，所述运行信息用于反映所述终端系统在运行过程中所产生的信息，所述内存读写数据用于反映所述终端系统对内存的读写速度；
    模式确定单元，用于根据所述内存读写数据，确定内存的工作模式；
    频率调整单元，用于根据所述工作模式，对所述内存的工作频率进行调整。
  15. 根据权利要求14所述的工作频率调整装置，其中，所述数据获取单元包括：
    第一获取子单元，用于获取所述智能终端的运行信息；
    第二获取子单元，用于根据所述运行信息，获取所述终端系统处于运行中的系统任务，所述系统任务包括应用程序、服务进程或者系统功能中的任意一种或多种；
    确定子单元，用于根据所述系统任务，确定所述终端系统的内存读写速度数据。
  16. 如权利要求15所述的工作频率调整装置，其中，所述确定子单元，包括：
    第一获取模块，用于根据所述系统任务，获取所述系统任务与所述终端系统启动时对应的读写峰值速度数据，所述读写峰值速度数据用于反映所述系统任务与所述终端系统在启动时自身对内存的最高读写速度；
    第二获取模块，用于获取所述终端系统在执行所述系统任务时，所述系统任务对所述内存的瞬时读写速度数据；
    确定模块，用于根据所述读写峰值速度数据以及所述瞬时读写速度数据，确定所述内存读写数据。
  17. 根据权利14所述的工作频率调整装置，其中，所述模式确定单元，包括：
    获取子单元，用于获取预设的同频带宽峰值速度数据；
    比较子单元，用于将所述内存读写数据和所述同频带宽峰值速度数据进行比较，以根据比较结果确定所述内存的工作模式。
  18. 根据权利要求17所述的工作频率调整装置，其中，所述内存工作模式包括同频工作模式和异频工作模式，所述频率调整单元包括：
    获取子单元，用于当所述内存的工作模式为同频工作模式时，则获取所述内存中所有内存颗粒对应的频率，从所有内存颗粒对应的频率中确定出最低频率，并将所述最低频率作为所述内存中所有内存颗粒的工作频率；
    控制子单元，用于当所述内存的工作模式为异频工作模式时，则控制所述内存中的所有内存颗粒均以各自对应的频率作为工作频率。
  19. 一种智能终端，其中，包括有存储器，以及一个或者一个以上的程序，其中一个或者一个以上程序存储于存储器中，且经配置以由一个或者一个以上处理器执行所述一个或者一个以上程序包含用于执行如权利要求1-13中任意一项所述的方法。
  20. 一种非临时性计算机可读存储介质，当所述存储介质中的指令由电子设备的处理器执行时，使得电子设备能够执行如权利要求1-13中任意一项所述的方法。
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