WO2021253829A1 - Light source with both high quantum yield and high bandwidth - Google Patents

Light source with both high quantum yield and high bandwidth Download PDF

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WO2021253829A1
WO2021253829A1 PCT/CN2021/073203 CN2021073203W WO2021253829A1 WO 2021253829 A1 WO2021253829 A1 WO 2021253829A1 CN 2021073203 W CN2021073203 W CN 2021073203W WO 2021253829 A1 WO2021253829 A1 WO 2021253829A1
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electrode
light source
quantum yield
luminescent material
layer
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PCT/CN2021/073203
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张顺平
徐红星
吴宇
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武汉大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes

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  • the invention relates to the field of light sources, in particular to a light source with both high quantum yield and high bandwidth.
  • Its core structure is a metal-insulator-metal (metal-insulator-metal, MIM) tunnel junction, where electrons are converted into photons through inelastic scattering and loss of energy through the MIM junction. Since the tunneling process of electrons is an ultra-fast process, the tunneling speed is usually on the order of fs. Theoretically, its corresponding working speed is limited to the order of 100THz, which is much higher than the traditional LED light-emitting mechanism.
  • MIM metal-insulator-metal
  • both of these light-emitting mechanisms have their own shortcomings.
  • the light-emitting speed is limited by the recombination process of electrons and holes.
  • the limit working bandwidth of this type of light source is only on the order of GHz.
  • the size of such light sources is relatively large, usually on the order of micrometers.
  • the RC constant of the circuit system of the light source will also directly affect the speed of light emission. It will be difficult for the development of high-speed visible light communications and integrated optical information devices in the future. obstacle.
  • the high-speed inelastic tunneling MIM light source its luminous brightness and efficiency (quantum yield is about 10-7 ) are the most important factors that hinder the practical application of this type of device.
  • the combination of metal nano-optical antennas and tunnel junctions is one of the possible solutions, because the mode localization of nano-optical antennas greatly improves the brightness of tunneling light without reducing the light-emitting speed.
  • the metal nano-antenna can be used as an electrode. With the advantages of high speed and miniaturization, it can provide large-capacity, high-speed, broadband and highly integrated miniature optoelectronic devices. At present, the light-emitting quantum yield of electrically-driven nano-antennas in the world has been greatly improved, reaching the order of 10 -4 -10 -5 , but it is still far from practical applications.
  • the purpose of the present invention is to provide a plasmon-exciton light source with high quantum yield and fast response speed, that is, a quantum tunnel junction and a two-dimensional layered light source.
  • This application proposes to integrate two-dimensional light-emitting materials into nano-light-emitting antennas, and use the highly localized near field of plasmons to greatly reduce the light-emitting life of the two-dimensional materials, forming a plasmon-exciton coupling body to emit light.
  • the new light-emitting mechanism can achieve the requirements of both quantum yield and bandwidth.
  • the present invention provides a light source with both high quantum yield and high bandwidth, which is connected to an external circuit, and is characterized in that it includes: a substrate, a patternable ultra-smooth metal electrode, an insulating layer, and a two-dimensional Luminescent material layer and nanoparticles;
  • the ultra-smooth metal electrode is arranged on the surface of the substrate; the ultra-smooth metal electrode includes an electrode #1 and an electrode #2; the electrode #1 and the electrode #2 are respectively connected to the high-voltage terminal and the low-voltage terminal of the external circuit;
  • the insulating layer is on the surface of the electrode #1;
  • One end of the two-dimensional luminescent material layer is in the overlapping area of the electrode #1 and the insulating layer, and the other end of the two-dimensional luminescent material layer is connected to the electrode #2;
  • the nanoparticles are in the overlapping area of the electrode #1, the insulating layer and the two-dimensional luminescent material layer.
  • the substrate is a silicon substrate or a glass substrate.
  • the ultra-smooth metal electrode is a metal electrode layer whose shape can be freely designed.
  • the metal electrode layer is a metal layer with high surface flatness prepared by a template method.
  • the metal electrode layer is a gold electrode.
  • the insulating layer is a boron nitride or aluminum oxide layer.
  • the two-dimensional luminescent material of the two-dimensional luminescent material layer is layered molybdenum selenide, molybdenum sulfide, tungsten selenide, tungsten sulfide, layered II-VI group semiconductor, III-V group semiconductor, or layered calcium Any of titanium ore.
  • nanoparticles are silver cubes.
  • the electrode of the present invention is also used as a part of the optical antenna to increase the luminous rate.
  • By applying a voltage between the electrodes electrons are tunneled into the two-dimensional light-emitting layer material, and light is emitted through the recombination of electrons and holes in the two-dimensional light-emitting layer material. .
  • the nano-antenna composed of nano-particles and gold film substrate will speed up the recombination process of electrons and holes, and achieve the purpose of high quantum yield and high speed.
  • Fig. 1 is a top view of the plasmon-exciton light source structure with high quantum yield and high speed according to the present invention
  • Fig. 2 is a side cross-sectional view of a plasmon-exciton light source with high quantum yield and high speed according to the present invention.
  • Electrode #1 and electrode #2 are both on the surface of the substrate 1, and the two electrodes are connected to the high-voltage terminal and the low-voltage terminal of the external circuit.
  • the insulating layer is located on one of the electrodes #1, a part of the two-dimensional material is located in the overlapping area of the insulating layer and the electrode, and the other part is overlapped with the other electrode #2.
  • the metal particles are located in the overlapping area of the electrode, the insulating layer and the two-dimensional luminescent material.
  • the above-mentioned electrode #1 and electrode #2 are both 200 nm gold electrodes.
  • the photoresist is spin-coated on the surface of the substrate, and the electrode pattern is exposed on the surface by ultraviolet exposure. Then use thermal evaporation to vaporize the metal, and coat the surface of the substrate with an ultra-smooth gold film with excellent surface roughness. Then use acetone to remove the ultraviolet glue to obtain an ultra-smooth gold electrode.
  • the distance between electrode #1 and electrode #2 is 4 microns.
  • a medium-thickness boron nitride and a single-layer two-dimensional luminescent material are obtained.
  • use the transfer platform to transfer the stripped boron nitride material and the two-dimensional material use polyvinyl alcohol (PVA) as a carrier, stick a single layer of two-dimensional material from the silicon wafer, and use the transfer platform to transfer at least one layer of boron nitride. Heterojunction, then PVA/two-dimensional material/boron nitride is transferred to an ultra-smooth electrode to prepare a metal-insulating layer-two-dimensional luminescent material heterostructure.
  • PVA polyvinyl alcohol
  • the thickness of the above-mentioned boron nitride is 2-3 nanometers.
  • the aforementioned two-dimensional material is a single-layer molybdenum selenide.
  • the nanoparticles were drip-coated on the overlapping area of electrode #1, insulating layer 3 and the two-dimensional material by a drip coating method.
  • the metal nano particles adopt silver nano cubic particles.
  • a bias voltage is applied between metal electrode 2 (electrode #1) and metal electrode 6 (electrode #2), electrons tunnel from metal electrode 2 (electrode #1) into the two-dimensional material, and pass through the electron void in the two-dimensional material.
  • the recombination of holes emits light.
  • the luminous efficiency of the metal-insulating layer-two-dimensional material under the nanocavity system has reached 5%. After adding the nano-antenna with high local density of states, the luminous quantum yield will be further improved To 30%-60%, it can be adjusted by the structural parameters of the nano-antenna.

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)

Abstract

Disclosed is a light source with both a high quantum yield and a high bandwidth. The light source is connected to an externally connected circuit, and the light source comprises: a substrate, super-smooth electrodes, an insulating layer, a two-dimensional luminescent material, and nanoparticles, wherein the super-smooth electrodes are disposed on a surface of the substrate, and the two electrodes are respectively connected to a high-voltage end and a low-voltage end of the externally connected circuit; the insulating layer is located on a surface of one of the super-smooth electrodes; one end of the two-dimensional luminescent material is located in an overlapping region of the super-smooth electrode and the insulating layer, and the other end thereof is connected to a second electrode; and the nanoparticles are located in an overlapping region of the super-smooth electrode, the insulating layer and the two-dimensional luminescent material. According to the present invention, the advantages of both a fast response speed and a high quantum yield are realized; and plane patterning can be performed.

Description

兼具高量子产率和高带宽的光源Light source with both high quantum yield and high bandwidth 技术领域Technical field
本发明涉及光源领域，具体是涉及一种兼具高量子产率和高带宽的光源。The invention relates to the field of light sources, in particular to a light source with both high quantum yield and high bandwidth.
背景技术Background technique
自上世纪90年代以来，人们一直在寻求可集成的高速度、高亮度的全固态发光光源。利用载流子的复合辐射实现高量子产率的发光是最常见的发光机制。该类光源主要是通过掺杂、II-VI或Ⅲ-Ⅴ族半导体生长等方法来制备诸如LED、激光二极管等光源。基于载流子复合发光的光源有极高的亮度，是目前工业化采用的主要手段。还有一种发光机制是采用非弹性隧穿机理来制备高速度的光源。它的核心结构是金属-绝缘层-金属(metal-insulator-metal，MIM)隧穿结，电子经过MIM结发生非弹性散射损失的能量转换成光子。由于电子的隧穿过程是一个超快过程，其隧穿速度通常在fs量级，理论上其对应的工作速度极限在100THz量级，远远高于传统的LED发光机制。Since the 1990s, people have been seeking integrated high-speed, high-brightness all-solid-state light sources. It is the most common luminescence mechanism to realize high-quantum-yield luminescence by using carrier recombination radiation. This type of light source is mainly prepared by methods such as doping, II-VI or III-V semiconductor growth and other methods to prepare light sources such as LEDs and laser diodes. The light source based on carrier recombination has extremely high brightness and is the main method used in industrialization at present. Another luminescence mechanism is to use an inelastic tunneling mechanism to prepare a high-speed light source. Its core structure is a metal-insulator-metal (metal-insulator-metal, MIM) tunnel junction, where electrons are converted into photons through inelastic scattering and loss of energy through the MIM junction. Since the tunneling process of electrons is an ultra-fast process, the tunneling speed is usually on the order of fs. Theoretically, its corresponding working speed is limited to the order of 100THz, which is much higher than the traditional LED light-emitting mechanism.
但是对于这两种发光机理，都存在自身的缺陷。对于载流子的复合辐射的发光过程来说，发光速度受限于电子空穴的复合过程，理论上这类光源的极限工作带宽只有GHz量级。同时此类光源的尺寸较大，通常在微米量级，光源的电路系统的RC常数也将直接影响发光的速度，对于未来的高速可见光通信、集成光信息器件的发展都将是一个难以跨越的障碍。而对于高速的非弹性隧穿MIM光源来说，其发光亮度和效率(量子产率约10 -7)都是阻碍这一类器件走向实用化的最重要因素。金属纳米光学天线和隧穿结的结合便是可能的解决方案之一，因为纳米光学天线的模式局域极大地提高了隧穿发光的亮度且不降低发光速度，同时金属纳米天线作为电极可兼具高速和小型化的优点，因此可提供大容量、高速率、宽频带和高度集成的微型光电子器件。当前，国际上电驱动纳米天线的发光量子产率已有较大的提升，达到10 -4-10 -5量级，但仍离实际应 用有很大的距离。 However, both of these light-emitting mechanisms have their own shortcomings. For the light-emitting process of carrier recombination radiation, the light-emitting speed is limited by the recombination process of electrons and holes. Theoretically, the limit working bandwidth of this type of light source is only on the order of GHz. At the same time, the size of such light sources is relatively large, usually on the order of micrometers. The RC constant of the circuit system of the light source will also directly affect the speed of light emission. It will be difficult for the development of high-speed visible light communications and integrated optical information devices in the future. obstacle. For the high-speed inelastic tunneling MIM light source, its luminous brightness and efficiency (quantum yield is about 10-7 ) are the most important factors that hinder the practical application of this type of device. The combination of metal nano-optical antennas and tunnel junctions is one of the possible solutions, because the mode localization of nano-optical antennas greatly improves the brightness of tunneling light without reducing the light-emitting speed. At the same time, the metal nano-antenna can be used as an electrode. With the advantages of high speed and miniaturization, it can provide large-capacity, high-speed, broadband and highly integrated miniature optoelectronic devices. At present, the light-emitting quantum yield of electrically-driven nano-antennas in the world has been greatly improved, reaching the order of 10 -4 -10 -5 , but it is still far from practical applications.
因此，寻找一种兼具高量子产率和高速度的光源将变得十分重要。Therefore, it will become very important to find a light source with both high quantum yield and high speed.
发明内容Summary of the invention
针对现有技术的不足，本发明的目的是提供一种兼具高量子产率和响应速度快的等离激元-激子发光光源，即是一种将量子隧穿结和二维层状材料、纳米光学天线相结合的高量子产率与速度(带宽)的等离激元-激子发光光源。本申请提出将二维发光材料集成到纳米发光天线中，利用等离激元的高度局域近场大大降低二维材料的发光寿命，形成等离激元-激子耦合体发光，是一种新的发光机制，可实现兼顾量子产率和带宽的要求。In view of the shortcomings of the prior art, the purpose of the present invention is to provide a plasmon-exciton light source with high quantum yield and fast response speed, that is, a quantum tunnel junction and a two-dimensional layered light source. A plasmon-exciton light source with high quantum yield and speed (bandwidth) combining materials and nano-optical antennas. This application proposes to integrate two-dimensional light-emitting materials into nano-light-emitting antennas, and use the highly localized near field of plasmons to greatly reduce the light-emitting life of the two-dimensional materials, forming a plasmon-exciton coupling body to emit light. The new light-emitting mechanism can achieve the requirements of both quantum yield and bandwidth.
为实现上述目的，本发明提供了一种兼具高量子产率和高带宽的光源，与外接电路连接，其特征在于：包括：基底、可图案化的超光滑金属电极、绝缘层、二维发光材料层和纳米颗粒；To achieve the above objective, the present invention provides a light source with both high quantum yield and high bandwidth, which is connected to an external circuit, and is characterized in that it includes: a substrate, a patternable ultra-smooth metal electrode, an insulating layer, and a two-dimensional Luminescent material layer and nanoparticles;
所述超光滑金属电极设置在基底的表面；所述超光滑金属电极包括电极#1和电极#2；所述电极#1和电极#2分别与外接电路的高压端和低压端连接；The ultra-smooth metal electrode is arranged on the surface of the substrate; the ultra-smooth metal electrode includes an electrode #1 and an electrode #2; the electrode #1 and the electrode #2 are respectively connected to the high-voltage terminal and the low-voltage terminal of the external circuit;
所述绝缘层在所述电极#1表面；The insulating layer is on the surface of the electrode #1;
所述二维发光材料层的一端在电极#1和绝缘层的交叠区域，二维发光材料层的另一端与电极#2相连；One end of the two-dimensional luminescent material layer is in the overlapping area of the electrode #1 and the insulating layer, and the other end of the two-dimensional luminescent material layer is connected to the electrode #2;
所述纳米颗粒在电极#1和绝缘层及二维发光材料层的交叠区域。The nanoparticles are in the overlapping area of the electrode #1, the insulating layer and the two-dimensional luminescent material layer.
作为优选方案，所述基底采用硅基底或玻璃基底。As a preferred solution, the substrate is a silicon substrate or a glass substrate.
进一步地，所述超光滑金属电极为形状可自由设计的金属电极层。Further, the ultra-smooth metal electrode is a metal electrode layer whose shape can be freely designed.
更进一步地，所述金属电极层为利用模板法制备的高表面平整度的金属层。Furthermore, the metal electrode layer is a metal layer with high surface flatness prepared by a template method.
更进一步地，所述金属电极层为金电极。Furthermore, the metal electrode layer is a gold electrode.
更进一步地，所述绝缘层为氮化硼或氧化铝层。Furthermore, the insulating layer is a boron nitride or aluminum oxide layer.
更进一步地，所述二维发光材料层的二维发光材料为层状硒化钼、硫化钼、 硒化钨、硫化钨、层状II-VI族半导体、III-V族半导体或层状钙钛矿中任一种。Furthermore, the two-dimensional luminescent material of the two-dimensional luminescent material layer is layered molybdenum selenide, molybdenum sulfide, tungsten selenide, tungsten sulfide, layered II-VI group semiconductor, III-V group semiconductor, or layered calcium Any of titanium ore.
更进一步地，所述纳米颗粒采用银立方体。Furthermore, the nanoparticles are silver cubes.
本发明具有以下优点和有益效果：The present invention has the following advantages and beneficial effects:
本发明的电极同时作为光学天线一部分用于提高发光速率，通过在电极之间加上电压，使得电子隧穿进入二维发光层材料，通过二维发光层材料中的电子空穴复合中进行发光。而纳米颗粒和金膜基底构成的纳米天线会使得电子空穴的复合过程加快，达到高量子产率和高速的目的。The electrode of the present invention is also used as a part of the optical antenna to increase the luminous rate. By applying a voltage between the electrodes, electrons are tunneled into the two-dimensional light-emitting layer material, and light is emitted through the recombination of electrons and holes in the two-dimensional light-emitting layer material. . The nano-antenna composed of nano-particles and gold film substrate will speed up the recombination process of electrons and holes, and achieve the purpose of high quantum yield and high speed.
附图说明Description of the drawings
图1为本发明兼具高量子产率和高速度的等离激元-激子发光光源结构俯视图；Fig. 1 is a top view of the plasmon-exciton light source structure with high quantum yield and high speed according to the present invention;
图2为本发明兼具高量子产率和高速度的等离激元-激子发光光源侧视剖面图。Fig. 2 is a side cross-sectional view of a plasmon-exciton light source with high quantum yield and high speed according to the present invention.
图中：1-基底，2-电极#1，3-绝缘层，4-二维发光材料层，5-纳米颗粒，6-In the figure: 1-substrate, 2-electrode #1, 3-insulating layer, 4-two-dimensional luminescent material layer, 5-nanoparticle, 6- 电极#2。 Electrode #2.
具体实施方式detailed description
下面将结合附图和具体实施例对本发明的技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings and specific embodiments. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
如图所示的响应速度快、量子产率高的纳米光源。两个电极(电极#1和电极#2)均在基底1的表面，两个电极与外部电路的高压端和低压端相连。绝缘层位于其中一个电极#1，二维材料一部分位于绝缘层和电极的交叠区域，另一 部分与另一电极#2有交叠。金属颗粒位于电极、绝缘层和二维发光材料的交叠区域。The nano light source with fast response speed and high quantum yield as shown in the figure. Two electrodes (electrode #1 and electrode #2) are both on the surface of the substrate 1, and the two electrodes are connected to the high-voltage terminal and the low-voltage terminal of the external circuit. The insulating layer is located on one of the electrodes #1, a part of the two-dimensional material is located in the overlapping area of the insulating layer and the electrode, and the other part is overlapped with the other electrode #2. The metal particles are located in the overlapping area of the electrode, the insulating layer and the two-dimensional luminescent material.
上述电极#1和电极#2均为200纳米的金电极。通过在基底表面旋涂光刻胶，利用紫外曝光在表面曝光出电极图案。再利用热蒸发进行金属的蒸镀，在基底表面镀上表面粗糙度优良的超光滑金膜。再利用丙酮去除紫外胶，得到超光滑的金电极。The above-mentioned electrode #1 and electrode #2 are both 200 nm gold electrodes. The photoresist is spin-coated on the surface of the substrate, and the electrode pattern is exposed on the surface by ultraviolet exposure. Then use thermal evaporation to vaporize the metal, and coat the surface of the substrate with an ultra-smooth gold film with excellent surface roughness. Then use acetone to remove the ultraviolet glue to obtain an ultra-smooth gold electrode.
上述电极#1和电极#2之间的间距为4微米。通过在100纳米氧化硅片上对氮化硼和二维材料进行机械剥离，得到厚度适中的氮化硼和单层的二维发光材料。再利用转移平台对剥离的氮化硼材料和二维材料进行转移，利用聚乙烯醇(PVA)作为载体，从硅片上粘取单层二维材料，利用转移平台转移至少层氮化硼制备异质结，再将PVA/二维材料/氮化硼转移至超光滑电极，制备出金属-绝缘层-二维发光材料异质结构。The distance between electrode #1 and electrode #2 is 4 microns. By mechanically stripping the boron nitride and the two-dimensional material on a 100 nanometer silicon oxide wafer, a medium-thickness boron nitride and a single-layer two-dimensional luminescent material are obtained. Then use the transfer platform to transfer the stripped boron nitride material and the two-dimensional material, use polyvinyl alcohol (PVA) as a carrier, stick a single layer of two-dimensional material from the silicon wafer, and use the transfer platform to transfer at least one layer of boron nitride. Heterojunction, then PVA/two-dimensional material/boron nitride is transferred to an ultra-smooth electrode to prepare a metal-insulating layer-two-dimensional luminescent material heterostructure.
上述氮化硼的厚度为2-3纳米。上述二维材料为单层硒化钼。通过滴涂法将纳米颗粒滴涂在电极#1、绝缘层3和二维材料的交叠区域。金属纳米颗粒采用银纳米立方颗粒。The thickness of the above-mentioned boron nitride is 2-3 nanometers. The aforementioned two-dimensional material is a single-layer molybdenum selenide. The nanoparticles were drip-coated on the overlapping area of electrode #1, insulating layer 3 and the two-dimensional material by a drip coating method. The metal nano particles adopt silver nano cubic particles.
本发明具体工作原理如下：The specific working principle of the present invention is as follows:
在金属电极2(电极#1)和金属电极6(电极#2)之间施加偏压，电子从金属电极2(电极#1)隧穿至二维材料中，通过二维材料中的电子空穴的复合进行发光。通过精确控制超光滑电极2(电极#1)和金属颗粒5构成的腔的共振峰位，使其与二维材料发光峰位相匹配。从而实现高强度和高量子产率的发光光源。A bias voltage is applied between metal electrode 2 (electrode #1) and metal electrode 6 (electrode #2), electrons tunnel from metal electrode 2 (electrode #1) into the two-dimensional material, and pass through the electron void in the two-dimensional material. The recombination of holes emits light. By precisely controlling the resonance peak position of the cavity formed by the ultra-smooth electrode 2 (electrode #1) and the metal particles 5, it can match the luminescence peak position of the two-dimensional material. Thus, a high-intensity and high-quantum-yield light source can be realized.
本实施例达到的有益效果如下：The beneficial effects achieved by this embodiment are as follows:
(1)具备兼具响应速度快、量子产率高的优点。(1) It has the advantages of fast response speed and high quantum yield.
(2)具备用多个纳米颗粒的排列实现可图案化平面光源的特点。(2) It has the characteristic of realizing a patternable planar light source with the arrangement of a plurality of nanoparticles.
(3)在纳腔中的二维材料已经被证实其载流子的复合速度在10fs量级，因此，其相对应的速度极限在10-100THz的量级。(3) The two-dimensional material in the nanocavity has been confirmed that its carrier recombination velocity is on the order of 10 fs. Therefore, its corresponding velocity limit is on the order of 10-100 THz.
(4)在无纳腔体系下的金属-绝缘层-二维材料的发光效率已经达到了5％，再加入高局域态密度的纳米天线以后，该发光量子产率将会有进一步的提高到30％-60％，可由纳米天线的结构参数进行调节。(4) The luminous efficiency of the metal-insulating layer-two-dimensional material under the nanocavity system has reached 5%. After adding the nano-antenna with high local density of states, the luminous quantum yield will be further improved To 30%-60%, it can be adjusted by the structural parameters of the nano-antenna.
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。The various embodiments in this specification are described in a progressive manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the various embodiments can be referred to each other.

Claims (9)

  1. 一种兼具高量子产率和高带宽的光源，与外接电路连接，其特征在于：包括：基底(1)、可图案化的超光滑金属电极、绝缘层(3)、二维发光材料层(4)和纳米颗粒(5)；A light source with both high quantum yield and high bandwidth, which is connected to an external circuit, and is characterized in that it includes: a substrate (1), a patternable ultra-smooth metal electrode, an insulating layer (3), and a two-dimensional luminescent material layer (4) and nanoparticles (5);
    所述超光滑金属电极设置在基底(1)的表面；所述超光滑金属电极包括电极#1(2)和电极#2(6)；所述电极#1(2)和电极#2(6)分别与外接电路的高压端和低压端连接；The ultra-smooth metal electrode is arranged on the surface of the substrate (1); the ultra-smooth metal electrode includes electrode #1 (2) and electrode #2 (6); the electrode #1 (2) and electrode #2 (6) ) Are respectively connected to the high-voltage and low-voltage terminals of the external circuit;
    所述绝缘层(3)在所述电极#1(2)表面；The insulating layer (3) is on the surface of the electrode #1 (2);
    所述二维发光材料层(4)的一端在电极#1(2)和绝缘层(3)的交叠区域，二维发光材料层(4)的另一端与电极#2(6)相连；One end of the two-dimensional luminescent material layer (4) is in the overlapping area of the electrode #1 (2) and the insulating layer (3), and the other end of the two-dimensional luminescent material layer (4) is connected to the electrode #2 (6);
    所述纳米颗粒(5)在电极#1(2)和绝缘层(3)及二维发光材料层(4)的交叠区域。The nano particles (5) are in the overlapping area of the electrode #1 (2), the insulating layer (3) and the two-dimensional luminescent material layer (4).
  2. 根据权利要求1所述的兼具高量子产率和高带宽的光源，其特征在于：所述基底(1)采用硅基底或玻璃基底。The light source with both high quantum yield and high bandwidth according to claim 1, wherein the substrate (1) is a silicon substrate or a glass substrate.
  3. 根据权利要求1或2所述的兼具高量子产率和高带宽的光源，其特征在于：所述超光滑金属电极为形状可自由设计的金属电极层。The light source with both high quantum yield and high bandwidth according to claim 1 or 2, wherein the ultra-smooth metal electrode is a metal electrode layer whose shape can be freely designed.
  4. 根据权利要求3所述的兼具高量子产率和高带宽的光源，其特征在于：所述金属电极层为利用模板法制备的高表面平整度的金属层。The light source with both high quantum yield and high bandwidth according to claim 3, wherein the metal electrode layer is a metal layer with high surface flatness prepared by a template method.
  5. 根据权利要求4所述的兼具高量子产率和高带宽的光源，其特征在于：所述金属电极层为金电极。The light source with both high quantum yield and high bandwidth according to claim 4, wherein the metal electrode layer is a gold electrode.
  6. 根据权利要求1或2或4或5所述的兼具高量子产率和高带宽的光源，其特征在于：所述绝缘层(3)为氮化硼或氧化铝层。The light source with both high quantum yield and high bandwidth according to claim 1 or 2 or 4 or 5, characterized in that the insulating layer (3) is a boron nitride or aluminum oxide layer.
  7. 根据权利要求1或2或4或5所述的兼具高量子产率和高带宽的光源，其特征在于：所述二维发光材料层(4)的二维发光材料为层状硒化钼、硫化钼、硒化钨、硫化钨、层状II-VI族半导体、III-V族半导体或层状钙钛矿中任一种。The light source with both high quantum yield and high bandwidth according to claim 1 or 2 or 4 or 5, characterized in that: the two-dimensional luminescent material of the two-dimensional luminescent material layer (4) is layered molybdenum selenide , Molybdenum sulfide, tungsten selenide, tungsten sulfide, layered II-VI group semiconductor, III-V group semiconductor or layered perovskite.
  8. 根据权利要求6所述的兼具高量子产率和高带宽的光源，其特征在于： 所述二维发光材料层(4)的二维发光材料为层状硒化钼、硫化钼、硒化钨、硫化钨、层状II-VI族半导体、III-V族半导体或层状钙钛矿中任一种。The light source with both high quantum yield and high bandwidth according to claim 6, characterized in that: the two-dimensional luminescent material of the two-dimensional luminescent material layer (4) is layered molybdenum selenide, molybdenum sulfide, selenide Any of tungsten, tungsten sulfide, layered group II-VI semiconductor, group III-V semiconductor, or layered perovskite.
  9. 根据权利要求1或2或4或5或8所述的兼具高量子产率和高带宽的光源，其特征在于：所述纳米颗粒(5)采用银立方体。The light source with both high quantum yield and high bandwidth according to claim 1 or 2 or 4 or 5 or 8, characterized in that the nanoparticles (5) are silver cubes.
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