WO2021243750A1 - 显示面板及其制造方法 - Google Patents

显示面板及其制造方法 Download PDF

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Publication number
WO2021243750A1
WO2021243750A1 PCT/CN2020/096305 CN2020096305W WO2021243750A1 WO 2021243750 A1 WO2021243750 A1 WO 2021243750A1 CN 2020096305 W CN2020096305 W CN 2020096305W WO 2021243750 A1 WO2021243750 A1 WO 2021243750A1
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WO
WIPO (PCT)
Prior art keywords
width modulation
pulse width
light emitting
circuit
display panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/096305
Other languages
English (en)
French (fr)
Inventor
华志恒
杨波
黄泰钧
梁鹏飞
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority to US17/048,632 priority Critical patent/US20230107672A1/en
Publication of WO2021243750A1 publication Critical patent/WO2021243750A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/06—Adjustment of display parameters
    • G09G2320/0626—Adjustment of display parameters for control of overall brightness
    • G09G2320/0633—Adjustment of display parameters for control of overall brightness by amplitude modulation of the brightness of the illumination source
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/06—Adjustment of display parameters
    • G09G2320/0626—Adjustment of display parameters for control of overall brightness
    • G09G2320/064—Adjustment of display parameters for control of overall brightness by time modulation of the brightness of the illumination source
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2011—Display of intermediate tones by amplitude modulation
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2014—Display of intermediate tones by modulation of the duration of a single pulse during which the logic level remains constant
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2007—Display of intermediate tones
    • G09G3/2077—Display of intermediate tones by a combination of two or more gradation control methods
    • G09G3/2081—Display of intermediate tones by a combination of two or more gradation control methods with combination of amplitude modulation and time modulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies

Definitions

  • the application relates to the display field, and in particular to a display panel and a manufacturing method thereof.
  • the existing method for manufacturing micro light-emitting diodes is to cut the light-emitting diodes into micro-light-emitting diodes, and then transfer the micro-light-emitting diodes to the display substrate in large quantities.
  • the pixel drive circuit etc. need to be fabricated on the display substrate in advance.
  • the pixel driving circuit and the like occupy a certain area of the display substrate and affect the aperture ratio of the display panel.
  • research has shown that under different currents, the light-emitting wavelength of the micro-light-emitting diode presents a U-shaped change. It causes problems such as shifting of the emission spectrum and uneven display of the panel.
  • the manufacturing process of the driving circuit on the glass substrate is backward, which is not conducive to mass production.
  • the purpose of the present application is to provide a display panel and a manufacturing method thereof that can increase the aperture ratio of the display panel, and can solve the problems of the light emission spectrum shift of the micro light emitting diode and uneven display of the panel.
  • the present application provides a display panel, the display panel includes a substrate and a plurality of display units arranged on the substrate, the plurality of display units are arranged in an array; wherein,
  • Each of the display units is integrated with a micro light emitting diode chip and a pulse width modulation chip electrically connected to the micro light emitting diode chip, and a pulse width modulation circuit is formed in the pulse width modulation chip, and the pulse width modulation circuit is used for To control the light-emitting time of the micro light-emitting diode chip.
  • the micro light emitting diode chip and the pulse width modulation chip are stacked in a direction perpendicular to the display surface of the display panel.
  • the pulse width modulation chip is bound on the substrate, and the micro light emitting diode chip is arranged on a side of the pulse width modulation chip away from the substrate.
  • each of the pulse width modulation chips is electrically connected to and controls the light emission of one or more of the micro light emitting diode chips.
  • the size of the pulse width modulation chip is tens of microns.
  • the pulse width modulation chip is formed by an integrated circuit manufacturing process.
  • the substrate is further provided with circuit elements and traces that electrically connect the display unit and the circuit elements, the micro light-emitting diode chip, the pulse width modulation chip, and the circuit element Together they constitute the pixel drive circuit of the display panel.
  • the pixel driving circuit includes an input unit, a control unit coupled with the input unit, and a light-emitting unit coupled with the control unit, and the input unit includes a PWM circuit scan signal and a PWM circuit data signal. , PAM circuit scan signal and PAM circuit data signal;
  • the control unit includes a PWM drive circuit electrically connected with the PWM circuit scan signal, a PWM circuit data signal, a first transistor electrically connected with the PWM drive circuit, a scan signal with the PAM circuit, and the PAM circuit data A second transistor electrically connected to the signal;
  • the light emitting unit includes the micro light emitting diode chip, a third transistor electrically connected to the micro light emitting diode chip, and a storage capacitor electrically connected to the third transistor.
  • the display panel further includes a packaging part for packaging the display unit.
  • the substrate is a glass substrate.
  • the substrate is provided with a plurality of electrical contact points, the multiple contact points correspond to the display units one-to-one, and each of the display units is bound to the corresponding electrical contact point .
  • the present application also provides a method for manufacturing a display panel, which includes the following steps:
  • a first substrate is provided, a micro light emitting diode chip is formed on the first substrate, a second substrate is provided, and a pulse width modulation chip is formed on the second substrate, and a pulse width modulation circuit is formed in the pulse width modulation chip, The pulse width modulation circuit is used to control the light emitting time of the micro light emitting diode chip;
  • a substrate is provided, and a plurality of the display units are bound on the substrate.
  • the step of fabricating the pulse width modulation chip includes fabricating a large PWM drive circuit on the second substrate by an integrated circuit method, and then cutting the large PWM drive circuit to form a micron-level pulse width modulation chip .
  • the step of transferring the micro light emitting diode chip to the second substrate and electrically connecting with the pulse width modulation chip to form a plurality of display units further includes using a packaging portion to connect the micro light emitting diode chip to the second substrate.
  • the light-emitting diode chip and the pulse width modulation chip package form an integral step.
  • the display panel of the present application adopts a pulse width modulation (Pulse Width Modulation, PWM) drive circuit.
  • the PWM drive circuit can reduce the impact of current density on the light emission of the micro light emitting diode chip, reduce the occurrence of color shift problems, and
  • the TFT threshold voltage can be compensated to improve the display uniformity.
  • the manufacturing method of the display panel of the present application uses an integrated circuit manufacturing process to form a pulse width modulation chip.
  • the integrated circuit manufacturing process is more advanced, which can reduce the manufacturing difficulty. Only simple traces need to be made on the glass substrate to drive the unit chip.
  • the glass substrate is easier to realize the massive transfer of Mirco-LED than other substrates, which further reduces the manufacturing difficulty.
  • FIG. 1 is a schematic diagram of the structure of the display panel according to the first embodiment of the application.
  • FIG. 2 is a schematic diagram of the display unit of the display panel according to the first embodiment of the application.
  • FIG. 3 is an equivalent circuit diagram of the pixel driving circuit of the display panel according to the first embodiment of the application.
  • 4(a) to 4(c) are schematic diagrams of steps of a manufacturing method of a display panel according to a second embodiment of the application.
  • the display panel 100 of the first embodiment of the present application is a micro light emitting diode chip display panel.
  • the display panel 100 includes a substrate 10 and a plurality of display units 20 provided on the substrate 10.
  • the first substrate 10 may be a glass substrate.
  • the multiple display units 20 are arranged in an array for displaying images under the control of the controller.
  • Each display unit 20 is integrated with a micro light emitting diode chip 21 and a pulse width modulation (Pulse Width Modulation, PWM) chip 22 connected to the micro light emitting diode chip 21.
  • a pulse width modulation circuit 22 a is formed in the pulse width modulation chip 22.
  • the pulse width modulation circuit 22a is used to control the light emitting time of the micro light emitting diode chip.
  • the PWM driving circuit 22a can use any PWM driving circuit structure in the prior art, which will not be repeated here.
  • the micro light emitting diode chip 21 and the pulse width modulation chip 22 are stacked in a direction perpendicular to the display surface of the display panel 100.
  • the pulse width modulation chip 22 and the micro light emitting diode chip 21 are integrated together, and only occupy the area of one pulse width modulation chip 22 or the micro light emitting diode chip 21 (depending on the size of the two).
  • the pulse width modulation chip 22 is disposed between the micro light emitting diode chip 21 and the substrate 10 so that light can be emitted.
  • the pulse width modulation chip 22 is bound on the substrate 10.
  • the micro light emitting diode chip 21 is arranged on the side of the pulse width modulation chip 22 away from the substrate 10. It can be understood that, in another embodiment, the micro light emitting diode chip 21 and the pulse width modulation chip 22 can also be arranged horizontally on the display surface of the display panel 100.
  • each pulse width modulation chip 22 can be electrically connected to and control the light emission of one or more micro light emitting diode chips 21.
  • the micro light emitting diode chip 21 may be a blue micro light emitting diode chip, a green micro light emitting diode chip, a red micro light emitting diode chip, or the like.
  • the pulse width modulation chip 22 has contacts connected to the micro light emitting diode chip 21, and the number of contacts is set according to the number of connected micro light emitting diode chips 21.
  • the pulse width modulation circuit in the prior art is directly formed on the substrate, its manufacturing accuracy can only reach the micron level.
  • the pulse width modulation circuit is made into the pulse width modulation chip 22 by the integrated circuit manufacturing method, which can achieve nanometer-level manufacturing accuracy. Specifically, a manufacturing accuracy of several hundreds of nanometers can be achieved, and the pulse width modulation chip 22 can be controlled to several tens of micrometers, for example, about 20 micrometers.
  • the substrate 10 is also provided with a circuit element 11 and a wiring 12 that electrically connects the display unit 20 and the circuit element 11.
  • the micro light emitting diode chip 21, the pulse width modulation chip 22 and the circuit element 11 together constitute the pixel driving circuit 101 of the display panel 100.
  • the circuit element 12 includes transistors and capacitors.
  • a plurality of electrical contact points 13 are provided on the substrate 10. The multiple contact points 13 correspond to the display unit 20 one-to-one. Each display unit 20 is bound to the corresponding electrical contact point 13.
  • the pixel driving circuit 101 includes an input unit 101a, a control unit 101b coupled with the input unit 101a, and a light emitting unit 101c coupled with the control unit 101b.
  • the control unit 101b is used to drive the light-emitting unit 101c to emit light.
  • the input unit 101a is used to detect the light chromaticity information of the light-emitting unit 101c and transmit the light chromaticity information to the control unit 101b.
  • the input unit 101a includes a PWM circuit scan signal (PWM_SCAN), a PWM circuit data signal (PWM_DATA), a PAM circuit scan signal (PAM_SCAN), and a PAM circuit data signal (V_PAM).
  • control unit 101b includes a PWM drive circuit 22a electrically connected to the PWM circuit scan signal (PWM_SCAN), the PWM circuit data signal (PWM_DATA), a first transistor T1 electrically connected to the PWM drive circuit 22a, and the PAM circuit scan signal ( PAM_SCAN) and the second transistor T2 electrically connected to the PAM circuit data signal (V_PAM).
  • PWM_SCAN PWM circuit scan signal
  • PWM_DATA PWM circuit data signal
  • PAM_SCAN PAM circuit scan signal
  • V_PAM PAM circuit data signal
  • the PWM circuit scan signal (PWM_SCAN) is connected to the gate of the first transistor T1 through the PWM drive circuit 22a, and is used to scan the PWM control unit line by line;
  • the PWM circuit data signal (PWM_DATA) is connected to the first transistor T1 through the PWM drive circuit 22a
  • the gate is connected to control the light-emitting time of the light-emitting unit.
  • the source of the first transistor T1 is grounded, which is equivalent to being electrically connected to the reset signal Vi;
  • the PAM circuit scan signal (PAM_SCAN) is connected to the gate of the second transistor T2 for progressive scanning of the PAM control unit;
  • PAM circuit data signal (V_PAM) is connected to the source of the second transistor T2 and is used to control the size of the driving current in the light-emitting unit; specifically, the voltage size of the PAM circuit data signal (V_PAM) is a fixed reference voltage (VREF).
  • the light emitting unit 30 includes a micro light emitting diode chip 21, a third transistor T3 electrically connected to the micro light emitting diode chip 21, and a storage capacitor CST electrically connected between the gate and drain of the third transistor T3.
  • the specific working process of the display panel 100 is as follows:
  • the PAM circuit scan signal (PAM_SCAN) is scanned line by line and written into the PAM circuit data signal (PAM_DATA).
  • the PAM circuit data signal (V_PAM) can be provided by a fixed reference voltage (VREF); after that, the PWM circuit scan signal (PWM_SCAN) is line by line Scan and write the PWM circuit data signal (PWM_DATA).
  • the size of the PWM circuit data signal (PWM_DATA) determines the light-emitting time of the light-emitting unit 101c; after that, the PWM circuit data signal (PWM_DATA) is output to the pulse width modulation circuit 20a, and pulse width modulation
  • the circuit 20a converts different PWM circuit data signals (PWM_DATA) into the light-emitting control time of the light-emitting unit 101c, and finally releases the charge in the storage capacitor to complete the conversion of the input voltage to the light-emitting time of the light-emitting unit 101c.
  • the thin film transistors Thin Film Transistor, TFT
  • the light emitting time of the micro light emitting diode chip is controlled to emit different brightness.
  • the light In the existing pixel driving circuit, the pixel voltage is modulated by simple pulse amplitude (Pulse Amplitude Modulation (PAM) voltage control, but the PAM voltage is fixed and uniform, so that the current of the micro light-emitting diode chip is the same, which cannot solve the problems of spectral shift and uneven display.
  • PAM Pulse Amplitude Modulation
  • the PWM driving circuit controls the light emitting time of the micro light emitting diode chip, so that the micro light emitting diode chip can emit light of different brightness.
  • the PWM drive circuit can reduce the impact of current density on MicroLED light emission, reduce the occurrence of color shift problems, and can also compensate the TFT threshold voltage to improve display uniformity.
  • the display panel 100 further includes an encapsulation part 30 for encapsulating the display unit 20.
  • the packaging part 30 may encapsulate one display unit 20 or multiple display units 20.
  • the packaging part 30 is wrapped around the micro light emitting diode chip 21 and the pulse width modulation chip 22, and encapsulates the two to form a whole.
  • the display panel 100 further includes a second substrate 40 disposed opposite to the first substrate 10.
  • a color conversion layer 50 and a filter layer 60 disposed opposite to the display unit 20 are also provided between the first substrate 10 and the second substrate 40.
  • the color conversion layer 50 and the filter layer 60 are used to convert and purify the light emitted by the blue micro light emitting diode chip. In other embodiments of the present application, if micro light-emitting diode chips with three colors of red, green, and blue are used for display, the color conversion layer 50 does not need to be provided.
  • a second embodiment of the present application provides a method for manufacturing a display panel, which includes the following steps:
  • a first substrate 200 is provided, and a micro light emitting diode chip 21 is formed on the first substrate 200.
  • a second substrate 300 is provided, and a pulse width modulation chip 22 is formed on the second substrate 300.
  • a pulse width modulation circuit 22a is formed in the pulse width modulation chip 22. The pulse width modulation circuit 22a is used to control the light emitting time of the micro light emitting diode chip 21.
  • the steps of forming the micro light emitting diode chip 21 on the first substrate 200 and forming the pulse width modulation chip 22 on the second substrate 300 are performed independently.
  • the manufacturing steps of the micro-light-emitting diode chip 21 include: epitaxially manufacturing a light-emitting diode (LED) chip on the first substrate 200, and then cutting the manufactured LED chip into micro-scale micro-light-emitting diode chips 21.
  • the first substrate 200 is a sapphire substrate.
  • the micro light emitting diode chip 21 may be a blue micro light emitting diode chip, a green micro light emitting diode chip, a red micro light emitting diode chip, or the like.
  • all the micro light emitting diode chips 21 are blue micro light emitting diode chips.
  • the pulse width modulation chip 22 includes pulse width modulation (Pulse Width Modulation). Modulation, PWM) drive circuit 22a.
  • the PWM drive circuit 22a can use any PWM drive circuit structure in the prior art.
  • the manufacturing steps of the pulse width modulation chip 22 include manufacturing a large PWM driving circuit on the second substrate 300 by an integrated circuit method, and then cutting the large PWM driving circuit to form a micron-level pulse width modulation chip 22.
  • the second substrate 300 is a wafer.
  • the PWM drive circuit of the present application is manufactured using integrated circuit technology, which is more advanced than the technology of manufacturing pixel drive circuits in the prior art on a glass substrate, and can achieve nanometer-level manufacturing accuracy. Specifically, a manufacturing accuracy of several hundreds of nanometers can be achieved, and the pulse width modulation chip 22 can be controlled to a size of micrometers, for example, about 20 micrometers. Thus, it is beneficial to the mass production of the display panel.
  • S2 Transfer the micro light emitting diode chip 21 to the second substrate 300, and electrically connect with the pulse width modulation chip 22 to form a plurality of display units 30.
  • each pulse width modulation chip 22 can be electrically connected to and control the light emission of one or more micro light emitting diode chips 21. In this step, it may also include the step of encapsulating the micro light emitting diode chip 21 and the pulse width modulation chip 22 into a whole by using the packaging part 30 (refer to FIG. 1 ).
  • S3 Provide a first substrate 10, and bind a plurality of display units 20 on the first substrate 10.
  • the display unit 20 formed on the second substrate 300 is sorted and binning, and the display unit 20 is transferred and bound on the first substrate 10.
  • the display unit 20 is bound to the first substrate 10 in a manner that the micro light emitting diode chip 21 and the pulse width modulation chip 22 are stacked in a direction perpendicular to the display surface of the display panel 100.
  • the pulse width modulation chip 22 is disposed between the micro light emitting diode chip 21 and the substrate 10 so that light can be emitted.
  • the pulse width modulation chip 22 is bound on the substrate 10.
  • the micro light emitting diode chip 21 is arranged on the side of the pulse width modulation chip 21 away from the substrate 10.
  • the micro light emitting diode chip 21 and the pulse width modulation chip 22 can also be arranged horizontally on the display surface of the display panel 100.
  • the first substrate 10 is a glass substrate. Compared with other substrates, the glass substrate is easier to realize the massive transfer of the display unit 20. Please also refer to FIG. 2, which is an enlarged view of the display unit on the display panel 100.
  • the substrate 10 is further provided with a circuit element 11 and a wiring 12 electrically connecting the display unit 20 and the circuit element 11.
  • the micro light emitting diode chip 21, the pulse width modulation chip 22 and the circuit element 11 together constitute the pixel driving circuit 101 of the display panel 100.
  • the circuit element 12 includes transistors and capacitors.
  • a plurality of electrical contact points 13 are provided on the substrate 10. The multiple contact points 13 correspond to the display unit 20 one-to-one. Each display unit 20 is bound to the corresponding electrical contact point 13.
  • the structure of the pixel driving circuit 101 is as described in the first embodiment, and will not be repeated here.
  • the manufacturing method of the display panel may further include the steps of fabricating the color conversion layer and the color filter layer on the second substrate, and the steps of aligning and attaching the first substrate and the second substrate to form the display panel.
  • the micro light emitting diode chip display panel with PWM driving function can be manufactured by the above manufacturing method.
  • the display panel of the present application uses a PWM drive circuit.
  • the PWM drive circuit can reduce the impact of current density on the light emission of the micro light emitting diode chip, reduce the occurrence of color shift problems, and can also compensate for the TFT threshold voltage to improve Show uniformity.
  • the manufacturing method of the display panel of the present application uses an integrated circuit manufacturing process to form a pulse width modulation chip, the integrated circuit manufacturing process is more advanced, and the manufacturing difficulty can be reduced. Only simple traces need to be made on the glass substrate to drive the display unit. Moreover, the glass substrate is easier to realize the massive transfer of Mirco-LED than other substrates, which further reduces the manufacturing difficulty.
  • liquid crystal display components provided in the embodiments of the present application are described in detail above, and specific examples are used in this article to describe the principles and implementation manners of the present application. The descriptions of the above embodiments are only used to help understand the present application. At the same time, for those skilled in the art, based on the idea of the application, there will be changes in the specific implementation and the scope of application. In summary, the content of this specification should not be construed as a limitation to the application.

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  • Computer Hardware Design (AREA)
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Abstract

本申请提供一种显示面板，显示面板包括基板以及设置在基板上的多个显示单元，多个显示单元呈阵列排布；其中，每个显示单元内集成有微发光二极管芯片以及与微发光二极管芯片电连接的脉冲宽度调制芯片，脉冲宽度调制芯片中形成有脉冲宽度调制电路，脉冲宽度调制电路用于控制微发光二极管芯片的发光时间。

Description

显示面板及其制造方法 技术领域
本申请涉及显示领域，具体涉及一种显示面板及其制造方法。
 背景技术
现有的微发光二极管（Micro light-emitting diodes, MicroLED）显示面板制造方法是将发光二极管切割成微发光二极管，后将微发光二极管大批量转移到显示基板上。显示基板上需提前制作好像素驱动电路等。像素驱动电路等会占用显示基板的一定面积，影响显示面板的开口率。并且，研究表明在不同的电流下，微发光二极管的发光波长呈现U型变化。引发发光光谱偏移，面板显示不均等问题。此外，在玻璃基板上制作驱动电路的制程工艺落后，不利于量产。
 技术问题
有鉴于此，本申请目的在于提供一种能够提高显示面板开口率，并且能够解决微发光二极管的发光光谱偏移，面板显示不均的问题的显示面板及其制造方法。
 技术解决方案
本申请提供一种显示面板，所述显示面板包括基板以及设置在所述基板上的多个显示单元，所述多个显示单元呈阵列排布；其中，
每个所述显示单元内集成有微发光二极管芯片以及与所述微发光二极管芯片电连接的脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间。
在一种实施方式中，所述微发光二极管芯片与所述脉冲宽度调制芯片在垂直于所述显示面板的显示面的方向上层叠设置。
在一种实施方式中，所述脉冲宽度调制芯片绑定于所述基板上，所述微发光二极管芯片设置于所述脉冲宽度调制芯片远离所述基板一侧。
在一种实施方式中，每一所述脉冲宽度调制芯片电连接并控制一个或多个所述微发光二极管芯片的发光。
在一种实施方式中，所述脉冲宽度调制芯片的尺寸为几十微米。
在一种实施方式中，所述脉冲宽度调制芯片利用集成电路制作工艺形成。
在一种实施方式中，所述基板上还设置有电路元件以及电连接所述显示单元与所述电路元件的走线，所述微发光二极管芯片、所述脉冲宽度调制芯片、所述电路元件共同构成所述显示面板的像素驱动电路。
在一种实施方式中，所述像素驱动电路包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述输入单元包括PWM电路扫描信号、PWM电路数据信号、PAM电路扫描信号以及PAM电路数据信号；
所述控制单元包括与所述PWM电路扫描信号、PWM电路数据信号电连接的PWM驱动电路、与所述PWM驱动电路电连接的第一晶体管、与所述PAM电路扫描信号以及所述PAM电路数据信号电连接的第二晶体管；
所述发光单元包括所述微发光二极管芯片、电连接于所述微发光二极管芯片的第三晶体管以及电连接于所述第三晶体管的存储电容。
在一种实施方式中，所述显示面板还包括用于封装所述显示单元的封装部。
在一种实施方式中，所述基板为玻璃基板。
在一种实施方式中，所述基板上设置有多个电接触点，所述多个接触点与所述显示单元一一对应，每一所述显示单元绑定于对应所述电接触点上。
本申请还提供一种显示面板的制造方法，其包括以下步骤：
提供第一衬底，在第一衬底上形成微发光二极管芯片，提供第二衬底，在第二衬底上形成脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间；
将所述微发光二极管芯片转移至所述第二衬底上，与所述脉冲宽度调制芯片电连接以形成多个显示单元；
提供基板，将多个所述显示单元绑定在所述基板上。
在一种实施方式中，所述脉冲宽度调制芯片的制作步骤包括在第二衬底上通过集成电路的方法制作大片PWM驱动电路，再将大片PWM驱动电路切割并形成微米级的脉冲宽度调制芯片。
在一种实施方式中，将所述微发光二极管芯片转移至所述第二衬底上，与所述脉冲宽度调制芯片电连接以形成多个显示单元的步骤还包括利用封装部将所述微发光二极管芯片和所述脉冲宽度调制芯片封装形成一个整体的步骤。
 有益效果
相较于现有技术，本申请的显示面板采用脉冲宽度调制（Pulse Width Modulation，PWM）驱动电路，PWM驱动电路可以降低电流密度对微发光二极管芯片发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。相较于在玻璃基板上制作驱动电路，本申请的显示面板的制造方法利用集成电路制作工艺形成脉冲宽度调制芯片，集成电路制作工艺更加先进，能够降低制造难度。玻璃基板上只需制作简单的走线用于驱动单元芯片。并且玻璃基板相较于其他基板更容易实现Mirco-LED的巨量转移，进一步降低了制造难度。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请的第一实施方式的显示面板的结构示意图。
图2为本申请的第一实施方式的显示面板的显示单元的示意图。
图3为本申请的第一实施方式的显示面板的像素驱动电路的等价电路图。
图4（a）至图4（c）为本申请的第二实施方式的显示面板的制造方法的步骤示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参考图1和图2，本申请第一实施方式的显示面板100为微发光二极管芯片显示面板。显示面板100包括基板10以及设置在基板10上的多个显示单元20。第一基板10可以为玻璃基板。多个显示单元20呈阵列排布，用于在控制器的控制下显示图像。每个显示单元20内均集成有微发光二极管芯片21以及与微发光二极管芯片21连接的脉冲宽度调制（Pulse Width Modulation，PWM）芯片22。其中，脉冲宽度调制芯片22中形成有脉冲宽度调制电路22a。脉冲宽度调制电路22a用于控制微发光二极管芯片的发光时间。PWM驱动电路22a可以使用现有技术中的任一PWM驱动电路结构，此处不再赘述。
在一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22在垂直于显示面板100的显示面的方向上层叠设置。脉冲宽度调制芯片22和微发光二极管芯片21集成在一起，总共只占用一个脉冲宽度调制芯片22或者微发光二极管芯片21的面积（视二者的大小而定）。在一个实施方式中，脉冲宽度调制芯片22设置于微发光二极管芯片21与基板10之间，以便光线出射。具体地，脉冲宽度调制芯片22绑定于基板10上。微发光二极管芯片21设置于脉冲宽度调制芯片22远离基板10一侧。可以理解，在另一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22也可以水平排列在显示面板100的显示面上。
在每一显示单元20内，每一脉冲宽度调制芯片22可以电连接并控制一个或多个微发光二极管芯片21的发光。微发光二极管芯片21可以为蓝色微发光二极管芯片、绿色微发光二极管芯片或者红色微发光二极管芯片等。脉冲宽度调制芯片22上具有连接微发光二极管芯片21的触点，根据所连接的微发光二极管芯片21数量来设置触点数量。
现有技术中的脉冲宽度调制电路如果直接形成在基板上，其制程精度只能达到微米级别。在本申请中，以集成电路的制造方法将脉冲宽度调制电路做成脉冲宽度调制芯片22，可以达到纳米级别的制造精度。具体地能够达到几百纳米的制造精度，且可以将脉冲宽度调制芯片22控制在几十微米，例如20微米左右。
请参考图2和3，基板10上还设置有电路元件11以及电连接显示单元20与电路元件11的走线12。微发光二极管芯片21、脉冲宽度调制芯片22、电路元件11共同构成显示面板100的像素驱动电路101。电路元件12具包括晶体管和电容等。此外，基板10上设置有多个电接触点13。多个接触点13与显示单元20一一对应。每一显示单元20绑定于对应电接触点13上。
像素驱动电路101包括：输入单元101a、与输入单元101a耦合的控制单元101b以及与控制单元101b耦合的发光单元101c。控制单元101b用于驱动发光单元101c发光。
具体地，输入单元101a用于检测发光单元101c的光线色度信息并将光线色度信息传输至控制单元101b。其中，输入单元101a包括PWM电路扫描信号（PWM_SCAN）、PWM电路数据信号（PWM_DATA）、PAM电路扫描信号（PAM_SCAN）以及PAM电路数据信号（V_PAM）。
具体地，控制单元101b包括与PWM电路扫描信号（PWM_SCAN）、PWM电路数据信号（PWM_DATA）电连接的PWM驱动电路22a、与PWM驱动电路22a电连接的第一晶体管T1、与PAM电路扫描信号（PAM_SCAN）以及PAM电路数据信号（V_PAM）电连接的第二晶体管T2。PWM电路扫描信号（PWM_SCAN）通过PWM驱动电路22a与第一晶体管T1的栅极连接，用于对PWM控制单元进行逐行扫描；PWM电路数据信号（PWM_DATA）通过PWM驱动电路22a与第一晶体管T1的栅极连接，用于控制发光单元的发光时间。第一晶体管T1的源极接地，相当于电连接于复位信号Vi；PAM电路扫描信号（PAM_SCAN）与第二晶体管T2的栅极连接，用于对PAM控制单元进行逐行扫描；PAM电路数据信号（V_PAM）与第二晶体管T2的源极连接，用于控制发光单元中驱动电流的大小；具体地，PAM电路数据信号（V_PAM）的电压大小为固定参考电压（VREF）。
发光单元30包括微发光二极管芯片21、电连接于微发光二极管芯片21的第三晶体管T3以及电连接于第三晶体管T3的栅极和漏极之间的存储电容CST。
显示面板100的具体工作过程如下：
PAM电路扫描信号（PAM_SCAN）逐行扫描，并写入PAM电路数据信号（PAM_DATA），PAM电路数据信号（V_PAM）可由一个固定参考电压（VREF）提供；之后，PWM电路扫描信号（PWM_SCAN）逐行扫描，并写入PWM电路数据信号（PWM_DATA），PWM电路数据信号（PWM_DATA）的大小决定发光单元101c的发光时间；之后，PWM电路数据信号（PWM_DATA）输出到脉冲宽度调制电路20a，脉冲宽度调制电路20a将不同的PWM电路数据信号（PWM_DATA）转换为发光单元101c的发光控制时间，最终将存储电容内的电荷释放，完成输入电压到发光单元101c的发光时间的转换。
在本申请中，通过对PWM驱动电路输入相同大小的控制电压V_CTRL，控制驱动薄膜晶体管（Thin Film Transistor，TFT）产生相同的电流，同时对微发光二极管芯片的发光时间进行控制，可以发出不同亮度的光。现有的像素驱动电路中，像素电压由简单的脉冲幅值调制(Pulse Amplitude Modulation，PAM)电压控制，但PAM电压固定统一，使微发光二极管芯片的电流相同，无法解决光谱偏移和显示不均的问题。而PWM驱动电路对微发光二极管芯片的发光时间进行控制，能够使微发光二极管芯片发出不同亮度的光。PWM驱动电路可以降低电流密度对MicroLED发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。
此外，显示面板100还包括用于封装显示单元20的封装部30。封装部30可以封装一个显示单元20，也可以封装多个显示单元20。封装部30包裹在微发光二极管芯片21和脉冲宽度调制芯片22外面，并将二者封装形成一个整体。
显示面板100还包括与第一基板10相对设置的第二基板40。第一基板10与第二基板40之间还设置有与显示单元20相对设置的色转换层50和滤光片层60。色转换层50和滤光片层60用于对蓝色微发光二极管芯片发出的光进行转换和纯化。在本申请其他实施方式中，采用红、绿、蓝三种颜色的微发光二极管芯片进行显示，则不需要设置色转换层50。
请参考图4（a）至图4（c），本申请第二实施方式提供一种显示面板的制造方法，其包括以下步骤：
S1：提供第一衬底200，在第一衬底200上形成微发光二极管芯片21。提供第二衬底300，在第二衬底300上形成脉冲宽度调制芯片22。脉冲宽度调制芯片22中形成有脉冲宽度调制电路22a。脉冲宽度调制电路22a用于控制微发光二极管芯片21的发光时间。
在第一衬底200上形成微发光二极管芯片21和在第二衬底300上形成脉冲宽度调制芯片22的步骤独立进行。
微发光二极管芯片21的制作步骤包括：在第一衬底200上外延制作发光二极管（LED）芯片，再将制作出的LED芯片切割成微米级大小的微发光二极管芯片21。第一衬底200为蓝宝石衬底。微发光二极管芯片21可以为蓝色微发光二极管芯片、绿色微发光二极管芯片或者红色微发光二极管芯片等。
在本实施方式中，微发光二极管芯片21全部为蓝色微发光二极管芯片。
脉冲宽度调制芯片22包括脉冲宽度调制（Pulse Width Modulation，PWM）驱动电路22a。PWM驱动电路22a可以使用现有技术中的任一PWM驱动电路结构。脉冲宽度调制芯片22的制作步骤包括在第二衬底300上通过集成电路的方法制作大片PWM驱动电路，再将大片PWM驱动电路切割并形成微米级的脉冲宽度调制芯片22。第二衬底300为晶圆。
本申请的PWM驱动电路采用集成电路工艺制作，集成电路制作工艺相较于在玻璃基板上制作现有技术中的像素驱动电路的工艺更加先进，可以达到纳米级别的制造精度。具体地能够达到几百纳米的制造精度，且可以将脉冲宽度调制芯片22控制在微米级的尺寸，例如20微米左右。从而，有利于显示面板的量产。
S2：将微发光二极管芯片21转移至第二衬底300上，与脉冲宽度调制芯片22电连接以形成多个显示单元30。
在每一显示单元20内，每一脉冲宽度调制芯片22可以电连接并控制一个或多个微发光二极管芯片21的发光。在此步骤中，还可以包括利用封装部30（参考图1）将微发光二极管芯片21和脉冲宽度调制芯片22封装形成一个整体的步骤。
S3：提供第一基板10，将多个显示单元20绑定在第一基板10上。在此步骤中，对形成在第二衬底300上的显示单元20进行拾取（sorting）和分级（binning），将显示单元20转移并绑定在第一基板10上。
在一个实施方式中，显示单元20以微发光二极管芯片21与脉冲宽度调制芯片22在垂直于显示面板100的显示面的方向上层叠设置的方式绑定在第一基板10上。在一个实施方式中，脉冲宽度调制芯片22设置于微发光二极管芯片21与基板10之间，以便光线出射。具体地，脉冲宽度调制芯片22绑定于基板10上。微发光二极管芯片21设置于脉冲宽度调制芯片21远离基板10一侧。在另一个实施方式中，微发光二极管芯片21与脉冲宽度调制芯片22也可以水平排列在显示面板100的显示面上。
第一基板10为玻璃基板。玻璃基板相较于其他基板更容易实现显示单元20的巨量转移。请一并参考图2，图2为显示面板100上的显示单元的放大图。
基板10上还设置有电路元件11以及电连接显示单元20与电路元件11的走线12。微发光二极管芯片21、脉冲宽度调制芯片22、电路元件11共同构成显示面板100的像素驱动电路101。电路元件12具包括晶体管和电容等。此外，基板10上设置有多个电接触点13。多个接触点13与显示单元20一一对应。每一显示单元20绑定于对应电接触点13上。
像素驱动电路101的结构如第一实施方式所述，在此不再赘述。
除了上述步骤，显示面板的制造方法还可以包括在第二基板上制作色转换层和滤色层的步骤，以及将第一基板和第二基板对位贴合形成显示面板的步骤。
通过上述制造方法可以制得带有PWM驱动功能的微发光二极管芯片显示面板。
相较于现有技术，本申请的显示面板采用PWM驱动电路，PWM驱动电路可以降低电流密度对微发光二极管芯片发光的影响，减少色偏问题的发生，还可以对TFT阈值电压进行补偿，改善显示均匀性。相较于玻璃基板上制作驱动电路，本申请的显示面板的制造方法利用集成电路制作工艺形成脉冲宽度调制芯片，集成电路制作工艺更加先进，能够降低制造难度。玻璃基板上只需制作简单的走线用于驱动显示单元。并且玻璃基板相较于其他基板更容易实现Mirco-LED的巨量转移，进一步降低了制造难度。
以上对本申请实施例提供的液晶显示组件进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示面板，其中，所述显示面板包括基板以及设置在所述基板上的多个显示单元，所述多个显示单元呈阵列排布；其中，
    每个所述显示单元内集成有微发光二极管芯片以及与所述微发光二极管芯片电连接的脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间。
  2. 如权利要求1所述的显示面板，其中，所述微发光二极管芯片与所述脉冲宽度调制芯片在垂直于所述显示面板的显示面的方向上层叠设置。
  3. 如权利要求2所述的显示面板，其中，所述脉冲宽度调制芯片绑定于所述基板上，所述微发光二极管芯片设置于所述脉冲宽度调制芯片远离所述基板一侧。
  4. 如权利要求1所述的显示面板，其中，每一所述脉冲宽度调制芯片电连接并控制一个或多个所述微发光二极管芯片的发光。
  5. 如权利要求1所述的显示面板，其中，所述脉冲宽度调制芯片的尺寸为几十微米。
  6. 如权利要求1所述的显示面板，其中，所述脉冲宽度调制芯片利用集成电路制作工艺形成。
  7. 如权利要求1所述的显示面板，其中，所述基板上还设置有电路元件以及电连接所述显示单元与所述电路元件的走线，所述微发光二极管芯片、所述脉冲宽度调制芯片、所述电路元件共同构成所述显示面板的像素驱动电路。
  8. 如权利要求7所述的显示面板，其中，所述像素驱动电路包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述输入单元包括PWM电路扫描信号、PWM电路数据信号、PAM电路扫描信号以及PAM电路数据信号；
    所述控制单元包括与所述PWM电路扫描信号、PWM电路数据信号电连接的PWM驱动电路、与所述PWM驱动电路电连接的第一晶体管、与所述PAM电路扫描信号以及所述PAM电路数据信号电连接的第二晶体管；
    所述发光单元包括所述微发光二极管芯片、电连接于所述微发光二极管芯片的第三晶体管以及电连接于所述第三晶体管的存储电容。
  9. 如权利要求1所述的显示面板，其中，所述显示面板还包括用于封装所述显示单元的封装部。
  10. 如权利要求1所述的显示面板，其中，所述基板为玻璃基板。
  11. 如权利要求1所述的显示面板，其中，所述基板上设置有多个电接触点，所述多个接触点与所述显示单元一一对应，每一所述显示单元绑定于对应所述电接触点上。
  12. 一种显示面板的制造方法，其包括以下步骤：
    提供第一衬底，在第一衬底上形成微发光二极管芯片，提供第二衬底，在第二衬底上形成脉冲宽度调制芯片，所述脉冲宽度调制芯片中形成有脉冲宽度调制电路，所述脉冲宽度调制电路用于控制所述微发光二极管芯片的发光时间；
    将所述微发光二极管芯片转移至所述第二衬底上，与所述脉冲宽度调制芯片电连接以形成多个显示单元；
    提供基板，将多个所述显示单元绑定在所述基板上。
  13. 如权利要求12所述的显示面板的制造方法，其中，所述微发光二极管芯片与所述脉冲宽度调制芯片在垂直于所述显示面板的显示面的方向上层叠设置。
  14. 如权利要求12所述的显示面板的制造方法，其中，所述脉冲宽度调制芯片绑定于所述基板上，所述微发光二极管芯片设置于所述脉冲宽度调制芯片远离所述基板一侧。
  15. 如权利要求12所述的显示面板的制造方法，其中，每一所述脉冲宽度调制芯片电连接并控制一个或多个所述微发光二极管芯片的发光。
  16. 如权利要求12所述的显示面板的制造方法，其中，所述脉冲宽度调制芯片的尺寸为几十微米。
  17. 如权利要求12所述的显示面板的制造方法，其中，所述脉冲宽度调制芯片的制作步骤包括在第二衬底上通过集成电路的方法制作大片PWM驱动电路，再将大片PWM驱动电路切割并形成微米级的脉冲宽度调制芯片。
  18. 如权利要求12所述的显示面板的制造方法，其中，所述基板上还设置有电路元件以及电连接所述显示单元与所述电路元件的走线，所述微发光二极管芯片、所述脉冲宽度调制芯片、所述电路元件共同构成所述显示面板的像素驱动电路。
  19. 如权利要求12所述的显示面板的制造方法，其中，所述像素驱动电路包括输入单元、与所述输入单元耦合的控制单元以及与所述控制单元耦合的发光单元，所述输入单元包括PWM电路扫描信号、PWM电路数据信号、PAM电路扫描信号以及PAM电路数据信号；
    所述控制单元包括与所述PWM电路扫描信号、PWM电路数据信号电连接的PWM驱动电路、与所述PWM驱动电路电连接的第一晶体管、与所述PAM电路扫描信号以及所述PAM电路数据信号电连接的第二晶体管；
    所述发光单元包括所述微发光二极管芯片、电连接于所述微发光二极管芯片的第三晶体管以及电连接于所述第三晶体管的存储电容。
  20. 如权利要求12所述的显示面板的制造方法，其中，将所述微发光二极管芯片转移至所述第二衬底上，与所述脉冲宽度调制芯片电连接以形成多个显示单元的步骤还包括利用封装部将所述微发光二极管芯片和所述脉冲宽度调制芯片封装形成一个整体的步骤。
PCT/CN2020/096305 2020-06-03 2020-06-16 显示面板及其制造方法 Ceased WO2021243750A1 (zh)

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