WO2021235066A1 - Method for manufacturing carrier for double-side polishing device, carrier for double-side polishing device, and method for wafer double-side polishing - Google Patents

Method for manufacturing carrier for double-side polishing device, carrier for double-side polishing device, and method for wafer double-side polishing Download PDF

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Publication number
WO2021235066A1
WO2021235066A1 PCT/JP2021/010649 JP2021010649W WO2021235066A1 WO 2021235066 A1 WO2021235066 A1 WO 2021235066A1 JP 2021010649 W JP2021010649 W JP 2021010649W WO 2021235066 A1 WO2021235066 A1 WO 2021235066A1
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Prior art keywords
double
carrier
polishing
wafer
sided polishing
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Application number
PCT/JP2021/010649
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French (fr)
Japanese (ja)
Inventor
容輝 吉田
佑宜 田中
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信越半導体株式会社
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Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Priority to CN202180031139.0A priority Critical patent/CN115485813A/en
Priority to KR1020227039248A priority patent/KR20230011291A/en
Publication of WO2021235066A1 publication Critical patent/WO2021235066A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Definitions

  • the present invention relates to a method for manufacturing a carrier for a double-sided polishing machine and a method for double-sided polishing of a wafer using the same.
  • a carrier for the double-sided polishing device having the same number of holding holes as the number of wafers is installed on the lower platen.
  • the wafer is held by the holding holes of the carrier, the wafer is sandwiched from both sides by the polishing cloth provided on the upper and lower surface plates, and polishing is performed while supplying the polishing agent to the polishing surface.
  • Metal carriers are the mainstream of carriers for double-sided polishing machines (hereinafter, also simply referred to as carriers) having holding holes for holding wafers.
  • a resin insert is provided in the inner peripheral portion of the wafer holding hole of the carrier. Since the resin insert is in contact with the outer peripheral portion of the wafer, it is important for creating the edge shape of the wafer.
  • One of the parameters related to the resin insert is a step with the metal substrate (carrier base material). An example of this step will be described below.
  • FIG. 6 shows a graph of the step profile between the resin insert and the carrier base material after the carrier has been start-up polished by the conventional technique.
  • the upper part is a schematic diagram showing the step between the resin insert and the carrier base material, and the height of the step between the resin insert and the carrier base material is scanned by contact-type measurement on the front and back surfaces of the carrier, respectively. Was measured.
  • the measurement result of the step amount is the middle graph, and the horizontal axis shows the distance in the radial direction of the carrier, and the vertical axis shows the step amount. 0 mm on the horizontal axis corresponds to the boundary between the carrier base material (minus) and the resin insert (plus).
  • the step amount is approximately 0 ⁇ m in the carrier base material portion.
  • a step from the front surface or the back surface of the carrier base material is shown, and if it is positive, it indicates that it protrudes from the carrier base material, and if it is negative, it indicates that it is recessed from the carrier base material.
  • the lower graph shows the results of measuring the amount of step between the front surface and the back surface and the difference between the front and back surfaces at a total of four locations moved by 90 ° on the resin insert. It can be seen that the difference between the front and back of the step amount is large at any of the points.
  • the above method is not only affected by the life of the member such as clogging of the pad (abrasive cloth) and the aggregated state of the slurry (abrasive), but also by the accuracy of the device and the warp of the carrier.
  • Either the front side or the back side of the resin insert is preferentially scraped, and the reduction of the difference between the front and back sides of the step amount cannot be sufficiently achieved.
  • the ZDD on the front and back sides of the wafer is different during wafer processing. A case was seen. Therefore, a simpler method for start-up polishing of a carrier having a resin insert, which is less dependent on the above-mentioned influence, has been desired.
  • the present invention has been made to solve such a problem, and to provide a method for manufacturing a carrier for a double-sided polishing machine capable of reducing the difference between the front and back sides of the step amount between the resin insert and the carrier base material. The purpose.
  • a carrier base material used in a double-sided polishing apparatus having an upper platen and a lower platen to which a polishing cloth is attached and having holding holes for holding a wafer
  • a method for manufacturing a carrier for a double-sided polishing machine comprising a resin insert arranged along the inner peripheral surface of a holding hole and having an inner peripheral portion in contact with the outer peripheral portion of the wafer, wherein the carrier base material and the carrier are provided.
  • a preparatory step for preparing the resin insert thicker than the base material a forming step for forming the resin insert on the inner peripheral surface of the holding hole so as to be non-adhesive and having a peeling strength of 10 N or more and 50 N or less, and the carrier.
  • a carrier for a double-sided polishing machine characterized in that the carrier composed of a base material and the resin insert is subjected to a rising-up polishing step in which the carrier is subjected to the start-up polishing in which the load is two or more stages by using the double-sided polishing device. Provides a manufacturing method for.
  • the amount of step between the resin insert and the carrier base material can be increased between the front surface side and the back surface side.
  • the vertical position of the resin insert can be adjusted so that the difference is small, that is, the protrusion of the resin insert is more symmetrical on the front and back.
  • the peel strength is 10 N or more, it is possible to prevent the resin insert from peeling from the carrier base material by polishing.
  • the resin insert is adjusted to the optimum position while reducing the amount of step between the resin insert and the carrier base material in the first stage polishing.
  • the amount of step between the resin insert and the carrier base material can be further reduced by polishing the second and subsequent steps, and the difference between the front and back sides of the step amount can be easily reduced. Further, by polishing both sides of the wafer using the carrier thus produced, a polished wafer having a small difference between the front and back sides of the ZDD at the edge can be obtained.
  • the load at the time of start-up polishing is multi-step of two or more steps includes the case where the same load is applied and the start-up polishing is performed a plurality of times.
  • the load of the first stage of the two or more stages can be 150 gf / cm 2 or more and 250 gf / cm 2 or less. If the load of the first stage is 150 gf / cm 2 (14.7 kPa) or more, the load is sufficient to adjust the position of the resin insert. Further, when it is 250 gf / cm 2 (24.5 kPa) or less, it is possible to more effectively suppress the non-adhesive resin insert from peeling from the carrier base material due to the frictional force with the polishing cloth.
  • the load of the first stage of the multi-stage of two or more stages can be made larger than the load of the second stage. If the load of the first stage of the start-up polishing is larger than the load of the second stage, it is more effective that the position of the resin insert adjusted by the first stage polishing is displaced by the second stage polishing. It can be suppressed.
  • the wafer in the double-sided polishing method for a wafer, the wafer is held in the holding hole of the double-sided polishing machine carrier manufactured by the above-mentioned method for manufacturing the double-sided polishing machine carrier, and the double-sided polishing machine is said to have the same.
  • the wafer is polished on both sides by sandwiching it between the upper and lower platens and rotating the upper and lower platens, and the difference between the front and back sides of the ZDD at the edge of the wafer after the double-side polishing is 5 nm or less.
  • a method for polishing both sides of a wafer is provided. With such a double-sided polishing method for a wafer, the difference between the front and back sides of the ZDD at the edge of the wafer after double-sided polishing is reduced as compared with the conventional method.
  • double-sided polishing it is possible to perform double-sided polishing in which the load is two or more stages.
  • double-sided polishing with two or more stages of polishing, the position of the resin insert of the carrier can be stabilized by the first stage of polishing, and then the wafer can be polished by the second and subsequent stages of polishing. It is possible to effectively improve ZDD.
  • the load of the first stage of the two or more stages can be 150 gf / cm 2 or more and 250 gf / cm 2 or less.
  • Such a load is a load sufficient to stabilize the position of the resin insert, and the resin insert can be more effectively suppressed from peeling from the carrier base material.
  • the load of the first stage of the multi-stage of two or more stages can be made larger than the load of the second stage. With such a load, it is possible to more effectively prevent the position of the resin insert stabilized by the first-stage polishing from being displaced when the second-stage polishing is performed.
  • the difference between the front and back sides of the step amount between the resin insert and the carrier base material can be easily reduced, and as a result, double-sided polishing of the wafer can be performed. It is possible to reduce the difference between the front and back sides of the ZDD of the wafer after polishing when it is used in the above.
  • the present inventors did not bond the resin inserts as in the prior art, but adjusted the number of wedge-shaped fittings and the outer diameter of the resin inserts to adjust the resin inserts.
  • the problem can be solved by preparing a carrier having a peel strength of 10 N or more and 50 N or less from the carrier base material and increasing the load to two or more stages during the start-up polishing of the resin insert. Completed.
  • FIG. 2 is a top view of a carrier for a double-sided polishing machine manufactured by the manufacturing method of the present invention.
  • the carrier 1 has a carrier base material 3 in which a holding hole 2 for holding a wafer is formed, and a resin insert 4 formed in a non-adhesive portion on the inner peripheral portion of the holding hole 2.
  • the holding hole 2 shows one carrier base material 3 here, the present invention is not limited to this, and may have a plurality of holding holes 2.
  • the material of the carrier base material 3 is not particularly limited, and for example, a metal substrate can be used.
  • the resin insert 4 for example, as shown in FIG.
  • the ring-shaped portion 4a may be composed of a ring-shaped portion 4a and a wedge 4b protruding outward from the ring-shaped portion 4a.
  • the number of wedges 4b and the outer diameter of the ring-shaped portion 4a are not particularly limited. However, it is formed by adjusting so that the peel strength described later is 10 N or more and 50 N or less. Further, the difference between the front and back of the step is small (for example, the amount of the step is about 11.034 ⁇ m and the difference between the front and back is about 11.77 ⁇ m).
  • Such a carrier 1 is used, for example, when the wafer W is double-sided polished in the 4-way double-sided polishing apparatus 10 as shown in FIG.
  • the double-sided polishing apparatus 10 includes an upper surface plate 11 and a lower surface plate 12 provided so as to face each other in the vertical direction.
  • Abrasive cloth 13 is attached to the upper and lower surface plates 11 and 12, respectively.
  • a sun gear 14 is provided in the central portion between the upper surface plate 11 and the lower surface plate 12, and an internal gear 15 is provided in the peripheral portion.
  • the outer peripheral teeth of the carrier 1 are meshed with the teeth of the sun gear 14 and the internal gear 15, and the carrier 1 is rotated by a drive source (not shown) as the upper surface plate 11 and the lower surface plate 12 are rotated. It revolves around the sun gear 14 while rotating.
  • both sides of the wafer W held by the holding holes 2 of the carrier 1 are simultaneously polished by the upper and lower polishing cloths 13.
  • the slurry 17 is supplied from the slurry supply device 16 to the polished surface of the wafer W.
  • FIG. 1 is a flow chart illustrating an outline of a method for manufacturing a carrier for a double-sided polishing apparatus and a method for double-sided polishing of a wafer according to the present invention.
  • a carrier base material 3 and a thicker resin insert 4 are prepared.
  • the carrier base material 3 having one holding hole 2 is used here, the present invention is not limited to this, and may have a plurality of holding holes 2.
  • the materials of the carrier base material 3 and the resin insert 4 are not particularly limited, and the carrier base material 3 may be made of a metal such as stainless steel or titanium, or may be surface-hardened. .. Further, the resin insert 4 can be made of, for example, a hard resin.
  • the resin insert 4 is formed on the inner peripheral surface of the holding hole 2.
  • the method for forming the resin insert 4 is not particularly limited, and the resin insert 4 can be formed, for example, by fitting or injection molding.
  • the resin insert 4 and the carrier base material 3 are not bonded to each other, and the peel strength is adjusted by adjusting the number and shape of the fitting wedges 4b as shown in FIG. 3, the outer diameter of the resin insert 4, and the like. Is 10N or more and 50N or less.
  • the peel strength referred to here means, for example, the maximum load at which the measurement point 5 as shown in FIG. 3 is pushed from the upper surface by a force gauge and the resin insert 4 is peeled from the carrier base material 3.
  • the peel strength is 50 N or less
  • the position of the resin insert 4 in the vertical direction so that the difference between the front surface side and the back surface side of the step amount between the resin insert 4 and the carrier base material 3 becomes small in the next rising polishing step. (Position in the thickness direction with respect to the carrier base material 3) can be adjusted.
  • the peel strength is 10 N or more, it is possible to prevent the resin insert 4 from peeling from the carrier base material 3 by polishing. For example, by using a wedge 4b having a number of 100 or less and a height of 5 mm or less, a peel strength of 50 N or less can be more reliably achieved.
  • the carrier 1 is subjected to start-up polishing to reduce the amount of step between the resin insert 4 and the carrier base material 3, and the carrier 1 having a small difference in the amount of step between the front and back is manufactured. do.
  • the start-up polishing can be performed by mounting the carrier 1 on the double-sided polishing apparatus 10 as shown in FIG. 4 and performing double-sided polishing without holding the wafer W in the holding hole 2.
  • the types of the polishing pad 13 and the slurry 17 are not particularly limited, and the same ones as those of the conventional method can be used.
  • the load for start-up polishing is set to two or more stages. That is, a load is applied and the surface is polished a plurality of times.
  • the amount of step between the resin insert 4 and the carrier base material 3 can be reduced by the first stage polishing, and the resin insert 4 can be adjusted to the optimum position.
  • the optimum position here means, for example, a position where the difference in the degree of protrusion of the resin insert 4 on the front surface side and the back surface side is almost equal.
  • the amount of step between the resin insert 4 and the carrier base material 3 can be further reduced by polishing the second and subsequent steps.
  • the number of stages of the multi-stage load may be a plurality of stages, may be only two stages, or may be three or more stages.
  • the number of steps may be determined each time according to, for example, the amount of steps and the difference between the front and back sides of the step amount, and the upper limit of the number of steps cannot be determined.
  • the load of the first stage can be 150 gf / cm 2 or more and 250 gf / cm 2 or less. If it is 150 gf / cm 2 or more, the load is sufficient to adjust the position of the resin insert 4. Further, when it is 250 gf / cm 2 or less, it is possible to more effectively suppress the non-adhesive resin insert 4 from peeling from the carrier base material 3 due to the frictional force with the polishing cloth. Further, the load of the first stage can be made larger than the load of the second stage.
  • the load of the second stage is 200 gf / cm 2 (19.6 kPa) or less, which is smaller than the load of the first stage, as opposed to the load of the first stage of 150 gf / cm 2 or more and 250 gf / cm 2 or less. be able to. By doing so, it is possible to more effectively prevent the position of the resin insert 4 adjusted in the first-stage polishing from moving when the second-stage polishing is performed and shifting the position. can.
  • the load can be the same value in each stage, or conversely, the load in the first stage can be made smaller than the load in the second stage, but the load in the first stage can be the load in the second stage. By making it larger, the difference between the front and back of the step amount can be efficiently reduced.
  • both sides of the wafer are polished using the manufactured carrier 1.
  • the wafer W is held in the holding hole 2 of the carrier 1, sandwiched between the upper surface plate 11 and the lower surface plate 12 of the double-sided polishing apparatus 10, and the upper surface plate 11 and the lower surface plate 12 are rotated. It is done by.
  • the types of the polishing pad 13 and the slurry 17 are not particularly limited, and the same ones as those of the conventional method can be used.
  • a wafer having a ZDD front-to-back difference of 5 nm or less at the edge it is possible to obtain a wafer having a ZDD front-to-back difference of 5 nm or less at the edge.
  • the load for double-sided polishing can be set to two or more stages, as in the case of the carrier start-up polishing in step 3. By doing so, the wafer can be polished after stabilizing the resin insert 4 at the optimum position, and the ZDD can be improved more effectively.
  • the number of stages of the load during double-sided polishing may be determined each time according to, for example, the amount of polishing, the polishing time, etc., and the upper limit of the number of stages cannot be determined.
  • the load of the first stage can be 150 gf / cm 2 or more and 250 gf / cm 2 or less. By doing so, the load is sufficient to stabilize the position of the resin insert 4, and the resin insert can be more effectively suppressed from peeling from the carrier base material.
  • the load of the first stage can be made larger than the load of the second stage.
  • Example 1 According to the flow of FIG. 1, the carrier for the double-sided polishing apparatus of the present invention was manufactured and double-sided polishing of a wafer having a diameter of 300 mm was performed. As shown in FIGS. 2 and 3, a resin insert 4 (material: FRP) was formed non-adhesively on the inner peripheral portion of the holding hole 2 of the carrier base material 3 (material: titanium). At that time, by increasing the number of wedges 4b to 80, a resin insert 4 having a peel strength of 40 N was manufactured.
  • FRP material: titanium
  • a DSP-20B manufactured by Nachi-Fujikoshi Machinery Co., Ltd. which is a 4-way double-sided polishing device, was used as the double-sided polishing device 10 as shown in FIG.
  • a urethane foam pad having a shore A hardness of 90 was used for the polishing cloth 13, and a slurry 17 containing silica abrasive grains, an average particle size of 35 nm, an abrasive grain concentration of 1.0 wt%, a pH of 10.5, and a KOH base was used.
  • the position of the insert is stabilized by applying a load of 150 gf / cm 2 in the first stage, and 100 gf / cm 2 (9.8 kPa) in the second stage. It was set as a two-stage load for polishing by applying the load of.
  • Comparative Example 1 In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Example 1, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
  • Example 2 The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 60 N by setting the number of wedges of the resin insert of the carrier to 130.
  • Comparative Example 3 In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Comparative Example 2, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
  • Example 4 As a carrier, an adhesive carrier in which a resin insert (shape: ring-shaped, without wedges) is adhered to and fixed to a carrier base material was adopted, and the peel strength thereof was set to 200 N. Other than that, the carrier was manufactured and the wafer was polished on both sides in the same manner as in Example 1.
  • Comparative Example 5 In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Comparative Example 4, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
  • Example 1 The difference between the front and back of the step amount between the resin insert of each carrier and the carrier base material is Example 1: 0.932 ⁇ m, Comparative Example 1: 7.192 ⁇ m, Comparative Example 2: 7.71 ⁇ m, Comparative Example 3: 6.286 ⁇ m. , Comparative Example 4: 12.272 ⁇ m, Comparative Example 5: 14.378 ⁇ m.
  • Example 2 The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 50 N by setting the number of wedges of the resin insert of the carrier to 100.
  • Example 3 The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 10 N by setting the number of wedges of the resin insert of the carrier to 20.
  • the difference between the front and back of the step amount between the resin insert of each carrier and the carrier base material was Example 2: 3.912 ⁇ m and Example 3: 3.514 ⁇ m.
  • the difference between the front and back sides of the ZDD at the edge of the wafer after double-side polishing was Example 2: 4.7 nm and Example 3: 4.5 nm. Further, in Comparative Example 6 in which polishing was performed in a state where the peel strength was less than 10 N, it was confirmed that the resin insert was removed during polishing.
  • the difference between the front and back sides of the step amount between the resin insert and the carrier base material can be reduced, and as a result, the front and back difference of the ZDD of the wafer is reduced. be able to.
  • the present invention is not limited to the above embodiment.
  • the above embodiment is an example, and any one having substantially the same configuration as the technical idea described in the claims of the present invention and having the same effect and effect is the present invention. It is included in the technical scope of the invention.

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Abstract

The present invention is a method for manufacturing a carrier for a double-side polishing device that has an upper surface plate and a lower surface plate with polishing cloths adhered thereto, said carrier having a carrier base material and a resin insert, said carrier base material having a retention hole formed therein for retaining a wafer, and said resin insert being positioned along an inner circumference surface of the retention hole and having an inner circumference section formed therein that contacts an outer circumference section of the wafer. This method for manufacturing a carrier for a double-side polishing device has: a preparation step in which the carrier base material and the resin insert, which is thicker than the carrier base material, are prepared; a forming step in which the resin insert is formed on the inner circumference surface of the retention hole in an unbonded manner and so as to have a peel strength of 10N to 50N; and a startup polishing step in which the double-side polishing device is used to perform startup polishing, with a multi-level load of two or more levels, of the carrier that comprises the carrier base material and the resin insert. Accordingly, the present invention provides a manufacturing method for a carrier for a double-side polishing device wherein obverse/reverse discrepancy in the level difference between the resin insert and the carrier base material in the carrier for a double-side polishing device can be reduced.

Description

両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法Manufacturing method of carrier for double-sided polishing equipment and double-sided polishing method of wafer
　本発明は、両面研磨装置用キャリアの製造方法及びそれを用いたウェーハの両面研磨方法に関する。 The present invention relates to a method for manufacturing a carrier for a double-sided polishing machine and a method for double-sided polishing of a wafer using the same.
　両面研磨装置は１バッチ当り５枚程のウェーハの両面を同時に研磨するため、ウェーハ枚数と同数の保持孔を有する両面研磨装置用キャリアを下定盤の上に設置する。キャリアの保持孔によりウェーハが保持され、上下定盤に設けられた研磨布により両面からウェーハが挟み込まれ、研磨面に研磨剤を供給しながら研磨が行われる。 Since the double-sided polishing device simultaneously polishes both sides of about 5 wafers per batch, a carrier for the double-sided polishing device having the same number of holding holes as the number of wafers is installed on the lower platen. The wafer is held by the holding holes of the carrier, the wafer is sandwiched from both sides by the polishing cloth provided on the upper and lower surface plates, and polishing is performed while supplying the polishing agent to the polishing surface.
　ウェーハを保持するための保持孔を有する両面研磨装置用キャリア（以下、単にキャリアとも言う）は金属製のキャリアが主流である。ウェーハの外周部を金属製のキャリアから保護するために、キャリアのウェーハ保持孔内周部には樹脂インサートを有している。樹脂インサートはウェーハの外周部と接するため、ウェーハのエッジ形状を作り込む上で重要となる。樹脂インサートに関するパラメータの一つとして金属基板（キャリア母材）との段差がある。この段差の一例を以下に説明する。 Metal carriers are the mainstream of carriers for double-sided polishing machines (hereinafter, also simply referred to as carriers) having holding holes for holding wafers. In order to protect the outer peripheral portion of the wafer from the metal carrier, a resin insert is provided in the inner peripheral portion of the wafer holding hole of the carrier. Since the resin insert is in contact with the outer peripheral portion of the wafer, it is important for creating the edge shape of the wafer. One of the parameters related to the resin insert is a step with the metal substrate (carrier base material). An example of this step will be described below.
　図６に、従来技術によるキャリアの立上研磨後の樹脂インサートとキャリア母材との段差プロファイルのグラフを示した。上段は樹脂インサートとキャリア母材との段差を示す概略図であり、樹脂インサートとキャリア母材の間にある段差の高さを、キャリアの表面と裏面でそれぞれ接触式測定によって探針を走査させて測定した。
　その段差量の測定結果が中段のグラフであり、横軸にキャリアの半径方向の距離を、縦軸に段差量を示している。横軸の０ｍｍはキャリア母材（マイナス）と樹脂インサート（プラス）の境目に該当する。段差量は、キャリア母材の部分ではほぼ０μｍである。樹脂インサートの部分ではキャリア母材の表面又は裏面からの段差が示されており、プラスであればキャリア母材から突出しており、マイナスであればキャリア母材から凹んでいることを示す。
　下段のグラフは、樹脂インサート上を９０°ずつ移動した計４箇所について、表面と裏面の段差量と表裏差をそれぞれ測定した結果を示している。いずれの箇所においても、段差量の表裏差が大きくなっていることがわかる。 FIG. 6 shows a graph of the step profile between the resin insert and the carrier base material after the carrier has been start-up polished by the conventional technique. The upper part is a schematic diagram showing the step between the resin insert and the carrier base material, and the height of the step between the resin insert and the carrier base material is scanned by contact-type measurement on the front and back surfaces of the carrier, respectively. Was measured.
The measurement result of the step amount is the middle graph, and the horizontal axis shows the distance in the radial direction of the carrier, and the vertical axis shows the step amount. 0 mm on the horizontal axis corresponds to the boundary between the carrier base material (minus) and the resin insert (plus). The step amount is approximately 0 μm in the carrier base material portion. In the portion of the resin insert, a step from the front surface or the back surface of the carrier base material is shown, and if it is positive, it indicates that it protrudes from the carrier base material, and if it is negative, it indicates that it is recessed from the carrier base material.
The lower graph shows the results of measuring the amount of step between the front surface and the back surface and the difference between the front and back surfaces at a total of four locations moved by 90 ° on the resin insert. It can be seen that the difference between the front and back of the step amount is large at any of the points.
　この段差がウェーハのエッジ形状の品質であるＺＤＤ（ｒａｄｉａｌ　Ｄｏｕｂｌｅ　Ｄｅｒｉｖａｔｉｖｅ　ｏｆ　Ｚ－ｈｅｉｇｈｔ）に影響することが分かっている。特にウェーハ表裏のＺＤＤを同等とするためには、樹脂インサートと金属基板との表裏の段差量が同等であることが望ましい。そこで従来技術では、金属基板よりも厚い樹脂インサートを接着し、上下定盤の回転数を調整することで表裏の段差量の差を低減させていた（例えば特許文献１参照）。
　なお、従来技術ではキャリアの樹脂インサート部分は、樹脂製の液剤による接着や金属基板へのアンカー導入など、脱落防止のため強固に固定されていた（例えば特許文献２参照）。 It is known that this step affects ZDD (Radial Double Derivative of Z-height), which is the quality of the edge shape of the wafer. In particular, in order to make the ZDDs on the front and back of the wafer the same, it is desirable that the amount of steps on the front and back of the resin insert and the metal substrate are the same. Therefore, in the prior art, a resin insert thicker than the metal substrate is adhered and the rotation speed of the upper and lower surface plates is adjusted to reduce the difference in the amount of steps between the front and back surfaces (see, for example, Patent Document 1).
In the prior art, the resin insert portion of the carrier was firmly fixed to prevent it from falling off, such as by adhering with a resin liquid agent or introducing an anchor to a metal substrate (see, for example, Patent Document 2).
特願２０１６－５６０８９号公報Japanese Patent Application No. 2016-56089 特願２００９－２２２１８３号公報Japanese Patent Application No. 2009-222183
　上記方法はパッド（研磨布）の目詰まりやスラリー（研磨剤）の凝集状態などの部材のライフだけでなく、装置精度やキャリアの反りなどの影響まで受けるために、設定条件とは想定外に樹脂インサートの表面側もしくは裏面側のどちらかが優先的に削れてしまい、段差量の表裏差の低減を十分に達成できず、その結果、ウェーハ加工時にウェーハの表裏のＺＤＤに差が生じてしまうケースが見受けられた。よって、上記の影響に依存しにくい、より容易な、樹脂インサートを有するキャリアの立上研磨方法が望まれた。 The above method is not only affected by the life of the member such as clogging of the pad (abrasive cloth) and the aggregated state of the slurry (abrasive), but also by the accuracy of the device and the warp of the carrier. Either the front side or the back side of the resin insert is preferentially scraped, and the reduction of the difference between the front and back sides of the step amount cannot be sufficiently achieved. As a result, the ZDD on the front and back sides of the wafer is different during wafer processing. A case was seen. Therefore, a simpler method for start-up polishing of a carrier having a resin insert, which is less dependent on the above-mentioned influence, has been desired.
　本発明はこのような課題を解決するためになされたものであり、樹脂インサートとキャリア母材との段差量の表裏差を低減することができる両面研磨装置用キャリアの製造方法を提供することを目的とする。 The present invention has been made to solve such a problem, and to provide a method for manufacturing a carrier for a double-sided polishing machine capable of reducing the difference between the front and back sides of the step amount between the resin insert and the carrier base material. The purpose.
　上記課題を解決するため、本発明では、研磨布が貼付された上定盤及び下定盤を有する両面研磨装置で用いられ、ウェーハを保持するための保持孔が形成されたキャリア母材と、前記保持孔の内周面に沿って配置され前記ウェーハの外周部と接する内周部が形成された樹脂インサートとを有する両面研磨装置用キャリアの製造方法であって、前記キャリア母材と、該キャリア母材よりも厚い前記樹脂インサートを準備する準備工程と、前記樹脂インサートを、前記保持孔の内周面に非接着かつ剥離強度が１０Ｎ以上５０Ｎ以下となるように形成する形成工程と、前記キャリア母材及び前記樹脂インサートからなるキャリアを、前記両面研磨装置を用いて、荷重が２段以上の多段である立上研磨を行う立上研磨工程とを有することを特徴とする両面研磨装置用キャリアの製造方法を提供する。 In order to solve the above problems, in the present invention, a carrier base material used in a double-sided polishing apparatus having an upper platen and a lower platen to which a polishing cloth is attached and having holding holes for holding a wafer, and the above-mentioned A method for manufacturing a carrier for a double-sided polishing machine, comprising a resin insert arranged along the inner peripheral surface of a holding hole and having an inner peripheral portion in contact with the outer peripheral portion of the wafer, wherein the carrier base material and the carrier are provided. A preparatory step for preparing the resin insert thicker than the base material, a forming step for forming the resin insert on the inner peripheral surface of the holding hole so as to be non-adhesive and having a peeling strength of 10 N or more and 50 N or less, and the carrier. A carrier for a double-sided polishing machine, characterized in that the carrier composed of a base material and the resin insert is subjected to a rising-up polishing step in which the carrier is subjected to the start-up polishing in which the load is two or more stages by using the double-sided polishing device. Provides a manufacturing method for.
　樹脂インサートが保持孔の内周面に接着されておらず剥離強度が５０Ｎ以下であれば、立上研磨を行うことで、樹脂インサートとキャリア母材との段差量の表面側と裏面側との差が小さくなるように、すなわち、樹脂インサートの突出具合がより一層表裏対称となるように樹脂インサートの上下方向の位置を調整することができる。また、剥離強度が１０Ｎ以上であれば、研磨により樹脂インサートがキャリア母材から剥離するのを抑制することができる。
　また、立上研磨の際の荷重を２段以上の多段とすることで、１段目の研磨で樹脂インサートとキャリア母材の段差量を低減しつつ、樹脂インサートを最適な位置に調整した上で、２段目以降の研磨で樹脂インサートとキャリア母材との段差量をさらに低減し、該段差量の表裏差を容易に低減することができる。さらにはこのようにして作られたキャリアを用いてウェーハを両面研磨することで、エッジのＺＤＤの表裏差の小さい研磨ウェーハを得られる。なお、「立上研磨の際の荷重を２段以上の多段とする」とは、同じ荷重を掛けて複数回、立上研磨を行う場合も含む。 If the resin insert is not adhered to the inner peripheral surface of the holding hole and the peel strength is 50 N or less, by performing start-up polishing, the amount of step between the resin insert and the carrier base material can be increased between the front surface side and the back surface side. The vertical position of the resin insert can be adjusted so that the difference is small, that is, the protrusion of the resin insert is more symmetrical on the front and back. Further, when the peel strength is 10 N or more, it is possible to prevent the resin insert from peeling from the carrier base material by polishing.
In addition, by setting the load during start-up polishing to multiple stages of two or more stages, the resin insert is adjusted to the optimum position while reducing the amount of step between the resin insert and the carrier base material in the first stage polishing. Therefore, the amount of step between the resin insert and the carrier base material can be further reduced by polishing the second and subsequent steps, and the difference between the front and back sides of the step amount can be easily reduced. Further, by polishing both sides of the wafer using the carrier thus produced, a polished wafer having a small difference between the front and back sides of the ZDD at the edge can be obtained. In addition, "the load at the time of start-up polishing is multi-step of two or more steps" includes the case where the same load is applied and the start-up polishing is performed a plurality of times.
　また、前記立上研磨工程において、前記２段以上の多段の１段目の荷重を１５０ｇｆ／ｃｍ２以上２５０ｇｆ／ｃｍ２以下とすることができる。
　１段目の荷重が１５０ｇｆ／ｃｍ２（１４．７ｋＰａ）以上であれば、樹脂インサートの位置を調整するのに十分な荷重となる。また、２５０ｇｆ／ｃｍ２（２４．５ｋＰａ）以下であれば、非接着である樹脂インサートが研磨布との摩擦力によりキャリア母材から剥離するのをより効果的に抑制することができる。 Further, in the rising polishing step, the load of the first stage of the two or more stages can be 150 gf / cm 2 or more and 250 gf / cm 2 or less.
If the load of the first stage is 150 gf / cm 2 (14.7 kPa) or more, the load is sufficient to adjust the position of the resin insert. Further, when it is 250 gf / cm 2 (24.5 kPa) or less, it is possible to more effectively suppress the non-adhesive resin insert from peeling from the carrier base material due to the frictional force with the polishing cloth.
　また、前記立上研磨工程において、前記２段以上の多段の１段目の荷重を、２段目の荷重より大きくすることができる。
　立上研磨の１段目の荷重が２段目の荷重より大きければ、１段目の研磨で調整した樹脂インサートの位置が、２段目の研磨で位置ズレしてしまうことをより効果的に抑制することができる。 Further, in the rising polishing step, the load of the first stage of the multi-stage of two or more stages can be made larger than the load of the second stage.
If the load of the first stage of the start-up polishing is larger than the load of the second stage, it is more effective that the position of the resin insert adjusted by the first stage polishing is displaced by the second stage polishing. It can be suppressed.
　また、本発明では、ウェーハの両面研磨方法であって、上記の両面研磨装置用キャリアの製造方法により製造した両面研磨装置用キャリアの前記保持孔に前記ウェーハを保持し、前記両面研磨装置の前記上下定盤の間に挟み込んで前記上下定盤を回転させることにより、前記ウェーハの両面研磨を行い、該両面研磨後の前記ウェーハのエッジにおけるＺＤＤの表裏差を５ｎｍ以下とすることを特徴とするウェーハの両面研磨方法を提供する。
　このようなウェーハの両面研磨方法であれば、両面研磨後のウェーハのエッジにおけるＺＤＤの表裏差が従来に比べて低減されたものとなる。 Further, in the present invention, in the double-sided polishing method for a wafer, the wafer is held in the holding hole of the double-sided polishing machine carrier manufactured by the above-mentioned method for manufacturing the double-sided polishing machine carrier, and the double-sided polishing machine is said to have the same. The wafer is polished on both sides by sandwiching it between the upper and lower platens and rotating the upper and lower platens, and the difference between the front and back sides of the ZDD at the edge of the wafer after the double-side polishing is 5 nm or less. A method for polishing both sides of a wafer is provided.
With such a double-sided polishing method for a wafer, the difference between the front and back sides of the ZDD at the edge of the wafer after double-sided polishing is reduced as compared with the conventional method.
　また、前記両面研磨において、荷重が２段以上の多段である両面研磨を行うことができる。
　両面研磨を２段以上の多段研磨とすることで、１段目の研磨でキャリアの樹脂インサートの位置を安定させた上で、２段目以降の研磨でウェーハの研磨を行うことができ、より効果的にＺＤＤの改善を図ることができる。 Further, in the double-sided polishing, it is possible to perform double-sided polishing in which the load is two or more stages.
By performing double-sided polishing with two or more stages of polishing, the position of the resin insert of the carrier can be stabilized by the first stage of polishing, and then the wafer can be polished by the second and subsequent stages of polishing. It is possible to effectively improve ZDD.
　また、前記両面研磨において、前記２段以上の多段の１段目の荷重を１５０ｇｆ／ｃｍ２以上２５０ｇｆ／ｃｍ２以下とすることができる。
　このような荷重であれば、樹脂インサートの位置を安定させるのに十分な荷重であり、かつ、樹脂インサートがキャリア母材から剥離するのをより効果的に抑制することができる。 Further, in the double-sided polishing, the load of the first stage of the two or more stages can be 150 gf / cm 2 or more and 250 gf / cm 2 or less.
Such a load is a load sufficient to stabilize the position of the resin insert, and the resin insert can be more effectively suppressed from peeling from the carrier base material.
　また、前記両面研磨において、前記２段以上の多段の１段目の荷重を、２段目の荷重より大きくすることができる。
　このような荷重であれば、１段目の研磨で安定させた樹脂インサートの位置が、２段目の研磨を行った際に位置ズレしてしまうことをより効果的に抑制することができる。 Further, in the double-sided polishing, the load of the first stage of the multi-stage of two or more stages can be made larger than the load of the second stage.
With such a load, it is possible to more effectively prevent the position of the resin insert stabilized by the first-stage polishing from being displaced when the second-stage polishing is performed.
　本発明の両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法であれば、樹脂インサートとキャリア母材との段差量の表裏差を容易に低減することができ、結果として、ウェーハの両面研磨に用いた際に研磨後のウェーハのＺＤＤの表裏差を低減することができる。 According to the method for manufacturing a carrier for a double-sided polishing apparatus and the double-sided polishing method for a wafer of the present invention, the difference between the front and back sides of the step amount between the resin insert and the carrier base material can be easily reduced, and as a result, double-sided polishing of the wafer can be performed. It is possible to reduce the difference between the front and back sides of the ZDD of the wafer after polishing when it is used in the above.
本発明の両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法の概略を示すフロー図である。It is a flow diagram which shows the outline of the manufacturing method of the carrier for the double-sided polishing apparatus of this invention, and the double-sided polishing method of a wafer. 本発明の製造方法で製造される両面研磨装置用キャリアの一例を示した上面図である。It is a top view which showed an example of the carrier for the double-sided polishing machine manufactured by the manufacturing method of this invention. 樹脂インサートの剥離強度の測定点を示した拡大図である。It is an enlarged view which showed the measurement point of the peel strength of a resin insert. 本発明の両面研磨装置用キャリアの製造方法で用いることができる両面研磨装置の一例を示した概略断面図である。It is schematic cross-sectional view which showed an example of the double-sided polishing apparatus which can be used in the manufacturing method of the carrier for double-sided polishing apparatus of this invention. 実施例１及び比較例１－５における両面研磨後のウェーハのエッジにおけるＺＤＤの表裏差の測定結果を示したグラフである。It is a graph which showed the measurement result of the front-back difference of ZDD at the edge of the wafer after double-sided polishing in Example 1 and Comparative Example 1-5. 従来技術によるキャリアの立上研磨後の樹脂インサートとキャリア母材との段差プロファイルを示すグラフである。It is a graph which shows the step profile of a resin insert and a carrier base material after the carrier start-up polishing by the prior art.
　上記したように、樹脂インサートとキャリア母材との段差量の表裏差を低減することができる両面研磨装置用キャリアの製造方法が求められていた。 As described above, there has been a demand for a method for manufacturing a carrier for a double-sided polishing machine that can reduce the difference between the front and back sides of the step amount between the resin insert and the carrier base material.
　本発明者らは上記課題について鋭意検討を重ねた結果、従来技術のように樹脂インサートの接着を行わず、嵌合の楔形状の個数や樹脂インサートの外径などを調整することで、樹脂インサートのキャリア母材からの剥離強度が１０Ｎ以上５０Ｎ以下としたキャリアを用意し、樹脂インサートの立上研磨の際に荷重を２段以上の多段にすることによって課題を解決できることを見出し、本発明を完成させた。 As a result of diligent studies on the above problems, the present inventors did not bond the resin inserts as in the prior art, but adjusted the number of wedge-shaped fittings and the outer diameter of the resin inserts to adjust the resin inserts. We have found that the problem can be solved by preparing a carrier having a peel strength of 10 N or more and 50 N or less from the carrier base material and increasing the load to two or more stages during the start-up polishing of the resin insert. Completed.
　以下、本発明について、実施態様の一例として、図を参照しながら詳細に説明するが、本発明はこれに限定されるものではない。 Hereinafter, the present invention will be described in detail with reference to the drawings as an example of an embodiment, but the present invention is not limited thereto.
　図２は本発明の製造方法で製造される両面研磨装置用キャリアの上面図である。
　キャリア１はウェーハを保持する保持孔２が形成されたキャリア母材３と、保持孔２の内周部に非接着で形成された樹脂インサート４を有している。なお、ここでは保持孔２が１つのキャリア母材３を示すが、本発明はこれに限定されることはなく、複数の保持孔２を有するものでもよい。また、キャリア母材３の材質についても特に限定されず、例えば、金属基板とすることができる。樹脂インサート４の例としては、例えば図３に示すようにリング状部４ａとリング状部４ａから外方向に突き出た楔４ｂからなっているものとすることができる。楔４ｂの数やリング状部４ａの外径は特に限定されない。ただし、後述する剥離強度が１０Ｎ以上５０Ｎ以下となるよう調整されて形成されている。さらに、段差の表裏差が小さいもの（例えば、段差量が１１．０３４μｍ程度で、表裏差が１１．７７μｍ程度）となっている。 FIG. 2 is a top view of a carrier for a double-sided polishing machine manufactured by the manufacturing method of the present invention.
The carrier 1 has a carrier base material 3 in which a holding hole 2 for holding a wafer is formed, and a resin insert 4 formed in a non-adhesive portion on the inner peripheral portion of the holding hole 2. Although the holding hole 2 shows one carrier base material 3 here, the present invention is not limited to this, and may have a plurality of holding holes 2. Further, the material of the carrier base material 3 is not particularly limited, and for example, a metal substrate can be used. As an example of the resin insert 4, for example, as shown in FIG. 3, it may be composed of a ring-shaped portion 4a and a wedge 4b protruding outward from the ring-shaped portion 4a. The number of wedges 4b and the outer diameter of the ring-shaped portion 4a are not particularly limited. However, it is formed by adjusting so that the peel strength described later is 10 N or more and 50 N or less. Further, the difference between the front and back of the step is small (for example, the amount of the step is about 11.034 μm and the difference between the front and back is about 11.77 μm).
　このようなキャリア１は、例えば、図４に示すような４ウェイ式の両面研磨装置１０においてウェーハＷを両面研磨する際に用いられる。両面研磨装置１０は、上下に相対向して設けられた上定盤１１と下定盤１２を備えている。上下定盤１１、１２には、それぞれ研磨布１３が貼付されている。上定盤１１と下定盤１２の間の中心部にはサンギア１４が、周縁部にはインターナルギア１５が設けられている。
　そして、サンギア１４及びインターナルギア１５の各歯部にはキャリア１の外周歯が噛合しており、上定盤１１及び下定盤１２が不図示の駆動源によって回転されるのに伴い、キャリア１は自転しつつサンギア１４の周りを公転する。このとき、キャリア１の保持孔２で保持されたウェーハＷの両面は、上下の研磨布１３により同時に研磨される。ウェーハＷの研磨時には、スラリー供給装置１６からスラリー１７がウェーハＷの研磨面に供給される。 Such a carrier 1 is used, for example, when the wafer W is double-sided polished in the 4-way double-sided polishing apparatus 10 as shown in FIG. The double-sided polishing apparatus 10 includes an upper surface plate 11 and a lower surface plate 12 provided so as to face each other in the vertical direction. Abrasive cloth 13 is attached to the upper and lower surface plates 11 and 12, respectively. A sun gear 14 is provided in the central portion between the upper surface plate 11 and the lower surface plate 12, and an internal gear 15 is provided in the peripheral portion.
The outer peripheral teeth of the carrier 1 are meshed with the teeth of the sun gear 14 and the internal gear 15, and the carrier 1 is rotated by a drive source (not shown) as the upper surface plate 11 and the lower surface plate 12 are rotated. It revolves around the sun gear 14 while rotating. At this time, both sides of the wafer W held by the holding holes 2 of the carrier 1 are simultaneously polished by the upper and lower polishing cloths 13. At the time of polishing the wafer W, the slurry 17 is supplied from the slurry supply device 16 to the polished surface of the wafer W.
　以下、図４の両面研磨装置１０を用いた、両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法について説明する。図１は本発明の両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法の概略を示すフロー図である。
　まず、図１の工程１のように、キャリア母材３と、それよりも厚い樹脂インサート４を準備する。なお、ここでは保持孔２が１つのキャリア母材３を用いるが、本発明はこれに限定されることはなく、複数の保持孔２を有するものとしてもよい。
　キャリア母材３及び樹脂インサート４の材質については特に限定されず、キャリア母材３は、例えば、ステンレスやチタンなどの金属製であるか、これに表面硬化処理を施したものとすることができる。また、樹脂インサート４は、例えば、硬質樹脂製のものとすることができる。 Hereinafter, a method of manufacturing a carrier for a double-sided polishing device and a method of double-sided polishing of a wafer using the double-sided polishing device 10 of FIG. 4 will be described. FIG. 1 is a flow chart illustrating an outline of a method for manufacturing a carrier for a double-sided polishing apparatus and a method for double-sided polishing of a wafer according to the present invention.
First, as in step 1 of FIG. 1, a carrier base material 3 and a thicker resin insert 4 are prepared. Although the carrier base material 3 having one holding hole 2 is used here, the present invention is not limited to this, and may have a plurality of holding holes 2.
The materials of the carrier base material 3 and the resin insert 4 are not particularly limited, and the carrier base material 3 may be made of a metal such as stainless steel or titanium, or may be surface-hardened. .. Further, the resin insert 4 can be made of, for example, a hard resin.
　次に、図１の工程２のように、保持孔２の内周面に樹脂インサート４を形成する。樹脂インサート４の形成方法については特に限定されず、例えば、嵌め込みや射出成型により形成することができる。
　ここで、樹脂インサート４とキャリア母材３との接着は行わず、図３に示すような嵌合の楔４ｂの個数及び形状や、樹脂インサート４の外径などを調整することで、剥離強度が１０Ｎ以上５０Ｎ以下となるようにする。
　ここでいう剥離強度とは、例えば図３に示したような測定点５をフォースゲージで上面から押し、樹脂インサート４がキャリア母材３から剥離する最大荷重を言う。 Next, as in step 2 of FIG. 1, the resin insert 4 is formed on the inner peripheral surface of the holding hole 2. The method for forming the resin insert 4 is not particularly limited, and the resin insert 4 can be formed, for example, by fitting or injection molding.
Here, the resin insert 4 and the carrier base material 3 are not bonded to each other, and the peel strength is adjusted by adjusting the number and shape of the fitting wedges 4b as shown in FIG. 3, the outer diameter of the resin insert 4, and the like. Is 10N or more and 50N or less.
The peel strength referred to here means, for example, the maximum load at which the measurement point 5 as shown in FIG. 3 is pushed from the upper surface by a force gauge and the resin insert 4 is peeled from the carrier base material 3.
　剥離強度が５０Ｎ以下であれば、次の立上研磨工程において、樹脂インサート４とキャリア母材３との段差量の表面側と裏面側の差が小さくなるように樹脂インサート４の上下方向の位置（キャリア母材３に対する厚さ方向の位置）を調整することができる。また、剥離強度が１０Ｎ以上であれば、研磨により樹脂インサート４がキャリア母材３から剥離するのを抑制することができる。
　なお、例えば、楔４ｂとして個数は１００個以下、高さは５ｍｍ以下のものを用いることにより、より確実に５０Ｎ以下の剥離強度を達成することができる。 When the peel strength is 50 N or less, the position of the resin insert 4 in the vertical direction so that the difference between the front surface side and the back surface side of the step amount between the resin insert 4 and the carrier base material 3 becomes small in the next rising polishing step. (Position in the thickness direction with respect to the carrier base material 3) can be adjusted. Further, when the peel strength is 10 N or more, it is possible to prevent the resin insert 4 from peeling from the carrier base material 3 by polishing.
For example, by using a wedge 4b having a number of 100 or less and a height of 5 mm or less, a peel strength of 50 N or less can be more reliably achieved.
　次に、図１の工程３のように、キャリア１の立上研磨を行い、樹脂インサート４とキャリア母材３との段差量を低減するとともに、表裏で段差量の差が少ないキャリア１を製造する。立上研磨は、図４に示すような両面研磨装置１０にキャリア１を装着し、保持孔２にウェーハＷを保持しない状態で両面研磨を行うことで可能である。なお、研磨布１３やスラリー１７の種類については特に限定されず、従来の方法と同様のものを使用することができる。 Next, as in step 3 of FIG. 1, the carrier 1 is subjected to start-up polishing to reduce the amount of step between the resin insert 4 and the carrier base material 3, and the carrier 1 having a small difference in the amount of step between the front and back is manufactured. do. The start-up polishing can be performed by mounting the carrier 1 on the double-sided polishing apparatus 10 as shown in FIG. 4 and performing double-sided polishing without holding the wafer W in the holding hole 2. The types of the polishing pad 13 and the slurry 17 are not particularly limited, and the same ones as those of the conventional method can be used.
　このとき、立上研磨の際の荷重を２段以上の多段とする。すなわち、荷重を掛けて複数回立上研磨する。これにより、まず１段目の研磨で樹脂インサート４とキャリア母材３との段差量を低減し、かつ、樹脂インサート４を最適な位置に調整することができる。ここでいう最適な位置とは、例えば表面側と裏面側での樹脂インサート４の突出具合の差がほぼ等しくなるような位置を言う。次に、２段目以降の研磨で樹脂インサート４とキャリア母材３との段差量をさらに低減することができる。その結果、表面側と裏面側の段差量の差が従来品より低減された優れたキャリアを得ることができる。なお、多段荷重の段数は複数であれば良く、２段のみでも良いし、あるいは３段以上とすることもできる。この複数の段数に関しては、例えば上記段差量や段差量の表裏差等に応じてその都度決定すればよく、段数の上限値は決められない。 At this time, the load for start-up polishing is set to two or more stages. That is, a load is applied and the surface is polished a plurality of times. As a result, the amount of step between the resin insert 4 and the carrier base material 3 can be reduced by the first stage polishing, and the resin insert 4 can be adjusted to the optimum position. The optimum position here means, for example, a position where the difference in the degree of protrusion of the resin insert 4 on the front surface side and the back surface side is almost equal. Next, the amount of step between the resin insert 4 and the carrier base material 3 can be further reduced by polishing the second and subsequent steps. As a result, it is possible to obtain an excellent carrier in which the difference in the amount of steps between the front surface side and the back surface side is reduced as compared with the conventional product. The number of stages of the multi-stage load may be a plurality of stages, may be only two stages, or may be three or more stages. The number of steps may be determined each time according to, for example, the amount of steps and the difference between the front and back sides of the step amount, and the upper limit of the number of steps cannot be determined.
　このとき、例えば１段目の荷重を１５０ｇｆ／ｃｍ２以上２５０ｇｆ／ｃｍ２以下とすることができる。１５０ｇｆ／ｃｍ２以上であれば、樹脂インサート４の位置を調整するのに十分な荷重となる。また、２５０ｇｆ／ｃｍ２以下であれば、非接着である樹脂インサート４が研磨布との摩擦力によりキャリア母材３から剥離するのをより効果的に抑制することができる。
　また、１段目の荷重を２段目の荷重より大きくすることができる。例えば、上記の１５０ｇｆ／ｃｍ２以上２５０ｇｆ／ｃｍ２以下の１段目の荷重に対し、２段目の荷重は２００ｇｆ／ｃｍ２（１９．６ｋＰａ）以下で１段目の荷重より小さい値にすることができる。このようにすれば、１段目の研磨で調整した樹脂インサート４の位置が、２段目の研磨を行った際に移動して、位置がズレてしまうことをより効果的に抑制することができる。なお、荷重は各段で同じ値とすることもできるし、上記と逆に１段目の荷重を２段目の荷重より小さくすることもできるが、１段目の荷重を２段目の荷重より大きくすることで、効率良く段差量の表裏差を小さくできる。 At this time, for example, the load of the first stage can be 150 gf / cm 2 or more and 250 gf / cm 2 or less. If it is 150 gf / cm 2 or more, the load is sufficient to adjust the position of the resin insert 4. Further, when it is 250 gf / cm 2 or less, it is possible to more effectively suppress the non-adhesive resin insert 4 from peeling from the carrier base material 3 due to the frictional force with the polishing cloth.
Further, the load of the first stage can be made larger than the load of the second stage. For example, the load of the second stage is 200 gf / cm 2 (19.6 kPa) or less, which is smaller than the load of the first stage, as opposed to the load of the first stage of 150 gf / cm 2 or more and 250 gf / cm 2 or less. be able to. By doing so, it is possible to more effectively prevent the position of the resin insert 4 adjusted in the first-stage polishing from moving when the second-stage polishing is performed and shifting the position. can. The load can be the same value in each stage, or conversely, the load in the first stage can be made smaller than the load in the second stage, but the load in the first stage can be the load in the second stage. By making it larger, the difference between the front and back of the step amount can be efficiently reduced.
　上記の工程１～３により、樹脂インサート４とキャリア母材３との段差量の表裏差が低減されたキャリア１を製造することができる。 By the above steps 1 to 3, it is possible to manufacture the carrier 1 in which the difference between the front and back sides of the step amount between the resin insert 4 and the carrier base material 3 is reduced.
　そして、図１の工程４のように、製造したキャリア１を用いてウェーハの両面研磨を行う。ウェーハの両面研磨は、キャリア１の保持孔２にウェーハＷを保持し、両面研磨装置１０の上定盤１１と下定盤１２の間に挟み込んで、上定盤１１と下定盤１２を回転させることにより行う。なお、研磨布１３やスラリー１７の種類については特に限定されず、従来の方法と同様のものを使用することができる。本発明で製造したキャリア１を用いることで、容易に、ＺＤＤの表裏差が十分に低減された研磨ウェーハを得ることができる。具体的には、エッジにおけるＺＤＤの表裏差が５ｎｍ以下のウェーハを得ることができる。ＺＤＤの表裏差は小さければ小さいほど良く、下限値は例えば０ｎｍとすることができる。 Then, as shown in step 4 of FIG. 1, both sides of the wafer are polished using the manufactured carrier 1. For double-sided polishing of a wafer, the wafer W is held in the holding hole 2 of the carrier 1, sandwiched between the upper surface plate 11 and the lower surface plate 12 of the double-sided polishing apparatus 10, and the upper surface plate 11 and the lower surface plate 12 are rotated. It is done by. The types of the polishing pad 13 and the slurry 17 are not particularly limited, and the same ones as those of the conventional method can be used. By using the carrier 1 manufactured by the present invention, it is possible to easily obtain a polished wafer in which the front-to-back difference of ZDD is sufficiently reduced. Specifically, it is possible to obtain a wafer having a ZDD front-to-back difference of 5 nm or less at the edge. The smaller the difference between the front and back of the ZDD, the better, and the lower limit can be, for example, 0 nm.
　このとき、工程３のキャリアの立上研磨と同様に、両面研磨の際の荷重を２段以上の多段とすることができる。このようにすれば、樹脂インサート４を最適な位置に安定させた上で、ウェーハの研磨を行うことができ、より効果的にＺＤＤの改善を図ることができる。この両面研磨の際の荷重の段数に関しては、例えば研磨量や研磨時間等に応じてその都度決定すればよく、段数の上限値は決められない。
　また、１段目の荷重を１５０ｇｆ／ｃｍ２以上２５０ｇｆ／ｃｍ２以下とすることができる。このようにすれば、樹脂インサート４の位置を安定させるのに十分な荷重であり、かつ、樹脂インサートがキャリア母材から剥離するのをより効果的に抑制することができる。
　また、１段目の荷重を２段目の荷重より大きくすることができる。このようにすれば、１段目の研磨で安定させた樹脂インサート４の位置が、２段目の研磨を行った際に移動して、位置がズレてしまうことをより効果的に抑制することができる。 At this time, the load for double-sided polishing can be set to two or more stages, as in the case of the carrier start-up polishing in step 3. By doing so, the wafer can be polished after stabilizing the resin insert 4 at the optimum position, and the ZDD can be improved more effectively. The number of stages of the load during double-sided polishing may be determined each time according to, for example, the amount of polishing, the polishing time, etc., and the upper limit of the number of stages cannot be determined.
Further, the load of the first stage can be 150 gf / cm 2 or more and 250 gf / cm 2 or less. By doing so, the load is sufficient to stabilize the position of the resin insert 4, and the resin insert can be more effectively suppressed from peeling from the carrier base material.
Further, the load of the first stage can be made larger than the load of the second stage. By doing so, the position of the resin insert 4 stabilized by the first-stage polishing can be more effectively suppressed from being displaced when the second-stage polishing is performed. Can be done.
　以下、実施例及び比較例を示して本発明をより具体的に説明するが、本発明は実施例に限定されるものではない。 Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the present invention is not limited to the Examples.
（実施例１）
　図１のフローに従って、本発明の両面研磨装置用キャリアの製造及び直径３００ｍｍのウェーハの両面研磨を行った。図２及び３に示すように、キャリア母材３（材質：チタン）の保持孔２の内周部に樹脂インサート４（材質：ＦＲＰ）を非接着で形成した。その際、楔４ｂの数を８０個にすることで、樹脂インサート４の剥離強度を４０Ｎのものを製造した。 (Example 1)
According to the flow of FIG. 1, the carrier for the double-sided polishing apparatus of the present invention was manufactured and double-sided polishing of a wafer having a diameter of 300 mm was performed. As shown in FIGS. 2 and 3, a resin insert 4 (material: FRP) was formed non-adhesively on the inner peripheral portion of the holding hole 2 of the carrier base material 3 (material: titanium). At that time, by increasing the number of wedges 4b to 80, a resin insert 4 having a peel strength of 40 N was manufactured.
　キャリア１の立上研磨及びウェーハの両面研磨には、図４に示すような両面研磨装置１０として、４ウェイ方式の両面研磨装置である不二越機械製ＤＳＰ－２０Ｂを用いた。研磨布１３にはショアＡ硬度９０の発泡ウレタンパッドを、スラリー１７にはシリカ砥粒含有・平均粒径３５ｎｍ・砥粒濃度１．０ｗｔ％・ｐＨ１０．５・ＫＯＨベースのものを用いた。
　また、キャリアの立上研磨とウェーハの両面研磨の両方において、１段目で１５０ｇｆ／ｃｍ２の荷重を掛けることでインサートの位置を安定させ、２段目で１００ｇｆ／ｃｍ２（９．８ｋＰａ）の荷重を掛けて研磨を行う２段荷重とした。 For the start-up polishing of the carrier 1 and the double-sided polishing of the wafer, a DSP-20B manufactured by Nachi-Fujikoshi Machinery Co., Ltd., which is a 4-way double-sided polishing device, was used as the double-sided polishing device 10 as shown in FIG. A urethane foam pad having a shore A hardness of 90 was used for the polishing cloth 13, and a slurry 17 containing silica abrasive grains, an average particle size of 35 nm, an abrasive grain concentration of 1.0 wt%, a pH of 10.5, and a KOH base was used.
Further, in both the start-up polishing of the carrier and the double-sided polishing of the wafer, the position of the insert is stabilized by applying a load of 150 gf / cm 2 in the first stage, and 100 gf / cm 2 (9.8 kPa) in the second stage. It was set as a two-stage load for polishing by applying the load of.
（比較例１）
　立上研磨と両面研磨の両方において、１００ｇｆ／ｃｍ２の荷重を掛けて研磨を一度だけ行う１段荷重としたこと以外は、実施例１と同様にしてキャリアの製造及びウェーハの両面研磨を行った。 (Comparative Example 1)
In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Example 1, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
（比較例２）
　キャリアの樹脂インサートの楔の数を１３０個にすることで、剥離強度を６０Ｎに設定したこと以外は、実施例１と同様にしてキャリアの製造及びウェーハの両面研磨を行った。 (Comparative Example 2)
The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 60 N by setting the number of wedges of the resin insert of the carrier to 130.
（比較例３）
　立上研磨と両面研磨の両方において、１００ｇｆ／ｃｍ２の荷重を掛けて研磨を一度だけ行う１段荷重としたこと以外は、比較例２と同様にしてキャリアの製造及びウェーハの両面研磨を行った。 (Comparative Example 3)
In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Comparative Example 2, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
（比較例４）
　キャリアとして、樹脂インサート（形状：リング状で、楔なし）をキャリア母材に接着させて固定する接着キャリアを採用し、その剥離強度は２００Ｎとした。それ以外は実施例１と同様にしてキャリアの製造及びウェーハの両面研磨を行った。 (Comparative Example 4)
As a carrier, an adhesive carrier in which a resin insert (shape: ring-shaped, without wedges) is adhered to and fixed to a carrier base material was adopted, and the peel strength thereof was set to 200 N. Other than that, the carrier was manufactured and the wafer was polished on both sides in the same manner as in Example 1.
（比較例５）
　立上研磨と両面研磨の両方において、１００ｇｆ／ｃｍ２の荷重を掛けて研磨を一度だけ行う１段荷重としたこと以外は、比較例４と同様にしてキャリアの製造及びウェーハの両面研磨を行った。 (Comparative Example 5)
In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Comparative Example 4, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
　それぞれのキャリアの樹脂インサートとキャリア母材との段差量の表裏差は、実施例１：０．９３２μｍ、比較例１：７．１９２μｍ、比較例２：７．７１μｍ、比較例３：６．２８６μｍ、比較例４：１２．２７２μｍ、比較例５：１４．３７８μｍであった。 The difference between the front and back of the step amount between the resin insert of each carrier and the carrier base material is Example 1: 0.932 μm, Comparative Example 1: 7.192 μm, Comparative Example 2: 7.71 μm, Comparative Example 3: 6.286 μm. , Comparative Example 4: 12.272 μm, Comparative Example 5: 14.378 μm.
　実施例１及び比較例１－５の両面研磨後のウェーハＷに対しては、ＳＣ－１洗浄を条件ＮＨ４ＯＨ：Ｈ２Ｏ２：Ｈ２Ｏ＝１：１：１５で行った。フラットネスについては、洗浄後ウェーハをＫＬＡ製のＷａｆｅｒｓｉｇｈｔ１を用いて測定し、ＺＤＤはエッジから２ｍｍを除外して算出し、Ｆｒｏｎｔ部（表面側）とＢａｃｋ部（裏面側）の差について、１バッチ５枚の平均をとってプロットした。その結果を図５に示す。 For the wafer W after double-sided polishing in Example 1 and Comparative Example 1-5, SC-1 cleaning was performed under the conditions of NH 4 OH: H 2 O 2 : H 2 O = 1: 1: 15. For flatness, the wafer after cleaning is measured using Wafersight 1 made by KLA, ZDD is calculated by excluding 2 mm from the edge, and the difference between the Front part (front side) and the Back part (back side) is one batch. The average of 5 sheets was taken and plotted. The results are shown in FIG.
　立上研磨及び両面研磨を多段荷重で行わない比較例１や、樹脂インサートの剥離強度が大きい比較例２－５では、両面研磨後のウェーハのエッジにおけるＺＤＤの表裏差が大きい（いずれも５ｎｍより大きい）。一方、立上研磨及び両面研磨を多段荷重で行い、かつ、剥離強度が５０Ｎ以下である実施例１のキャリアを用いてウェーハの両面研磨を行えば、ウェーハのエッジにおけるＺＤＤの表裏差を５ｎｍ以下（より具体的には１ｎｍ程度）に低減できることがわかる。 In Comparative Example 1 in which start-up polishing and double-sided polishing are not performed with a multi-stage load, and Comparative Example 2-5 in which the peel strength of the resin insert is large, the difference between the front and back sides of the ZDD at the edge of the wafer after double-sided polishing is large (both from 5 nm). big). On the other hand, if both-side polishing of the wafer is performed using the carrier of Example 1 in which the start-up polishing and the double-sided polishing are performed with a multi-stage load and the peel strength is 50 N or less, the front-back difference of ZDD at the edge of the wafer is 5 nm or less. It can be seen that it can be reduced to (more specifically, about 1 nm).
（実施例２）
　キャリアの樹脂インサートの楔の数を１００個にすることで、剥離強度を５０Ｎに設定したこと以外は、実施例１と同様にしてキャリアの製造及びウェーハの両面研磨を行った。 (Example 2)
The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 50 N by setting the number of wedges of the resin insert of the carrier to 100.
（実施例３）
　キャリアの樹脂インサートの楔の数を２０個にすることで、剥離強度を１０Ｎに設定したこと以外は、実施例１と同様にしてキャリアの製造及びウェーハの両面研磨を行った。 (Example 3)
The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 10 N by setting the number of wedges of the resin insert of the carrier to 20.
（比較例６）
　キャリアの樹脂インサートの楔の数を１０個にすることで、剥離強度を５Ｎに設定したこと以外は、実施例１と同様にしてキャリアの製造を行ったところ、立上研磨中に樹脂インサートが外れてしまったため、製造を中止した。 (Comparative Example 6)
When the carrier was manufactured in the same manner as in Example 1 except that the peel strength was set to 5N by setting the number of wedges of the resin insert of the carrier to 10, the resin insert was found during the start-up polishing. The production was discontinued because it came off.
　それぞれのキャリアの樹脂インサートとキャリア母材との段差量の表裏差は、実施例２：３．９１２μｍ、実施例３：３．５１４μｍであった。また、両面研磨後のウェーハのエッジにおけるＺＤＤの表裏差は、実施例２：４．７ｎｍ、実施例３：４．５ｎｍであった。また、剥離強度が１０Ｎより小さい状態で研磨を行う比較例６では、研磨中に樹脂インサートが外れることを確認した。 The difference between the front and back of the step amount between the resin insert of each carrier and the carrier base material was Example 2: 3.912 μm and Example 3: 3.514 μm. The difference between the front and back sides of the ZDD at the edge of the wafer after double-side polishing was Example 2: 4.7 nm and Example 3: 4.5 nm. Further, in Comparative Example 6 in which polishing was performed in a state where the peel strength was less than 10 N, it was confirmed that the resin insert was removed during polishing.
　このように、本発明の両面研磨装置用キャリアの製造方法であれば、樹脂インサートとキャリア母材との段差量の表裏差を低減することができ、結果としてウェーハのＺＤＤの表裏差を低減することができる。 As described above, according to the method for manufacturing a carrier for a double-sided polishing machine of the present invention, the difference between the front and back sides of the step amount between the resin insert and the carrier base material can be reduced, and as a result, the front and back difference of the ZDD of the wafer is reduced. be able to.
　なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は、例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。 The present invention is not limited to the above embodiment. The above embodiment is an example, and any one having substantially the same configuration as the technical idea described in the claims of the present invention and having the same effect and effect is the present invention. It is included in the technical scope of the invention.

Claims (7)

  1. 　研磨布が貼付された上定盤及び下定盤を有する両面研磨装置で用いられ、ウェーハを保持するための保持孔が形成されたキャリア母材と、前記保持孔の内周面に沿って配置され前記ウェーハの外周部と接する内周部が形成された樹脂インサートとを有する両面研磨装置用キャリアの製造方法であって、
    　前記キャリア母材と、該キャリア母材よりも厚い前記樹脂インサートを準備する準備工程と、
    　前記樹脂インサートを、前記保持孔の内周面に非接着かつ剥離強度が１０Ｎ以上５０Ｎ以下となるように形成する形成工程と、
    　前記キャリア母材及び前記樹脂インサートからなるキャリアを、前記両面研磨装置を用いて、荷重が２段以上の多段である立上研磨を行う立上研磨工程とを有することを特徴とする両面研磨装置用キャリアの製造方法。     It is used in a double-sided polishing machine having an upper surface plate and a lower surface plate to which a polishing cloth is attached, and is arranged along an inner peripheral surface of the holding hole and a carrier base material in which a holding hole for holding a wafer is formed. A method for manufacturing a carrier for a double-sided polishing machine, which has a resin insert having an inner peripheral portion formed in contact with the outer peripheral portion of the wafer.
    A preparatory step for preparing the carrier base material and the resin insert thicker than the carrier base material,
    A forming step of forming the resin insert on the inner peripheral surface of the holding hole so as to be non-adhesive and have a peel strength of 10 N or more and 50 N or less.
    A double-sided polishing apparatus comprising a start-up polishing step in which a carrier composed of the carrier base material and the resin insert is subjected to a start-up polishing with a load of two or more stages by using the double-sided polishing apparatus. How to make a carrier for.
  2. 　前記立上研磨工程において、前記２段以上の多段の１段目の荷重を１５０ｇｆ／ｃｍ２以上２５０ｇｆ／ｃｍ２以下とすることを特徴とする請求項１に記載の両面研磨装置用キャリアの製造方法。 The manufacture of a carrier for a double-sided polishing apparatus according to claim 1, wherein in the rising polishing step, the load of the first stage of the two or more stages is 150 gf / cm 2 or more and 250 gf / cm 2 or less. Method.
  3. 　前記立上研磨工程において、前記２段以上の多段の１段目の荷重を、２段目の荷重より大きくすることを特徴とする請求項１または請求項２に記載の両面研磨装置用キャリアの製造方法。 The carrier for a double-sided polishing machine according to claim 1 or 2, wherein in the start-up polishing step, the load of the first stage of the two or more stages is made larger than the load of the second stage. Production method.
  4. 　ウェーハの両面研磨方法であって、
    　請求項１から請求項３のいずれか一項に記載の両面研磨装置用キャリアの製造方法により製造した両面研磨装置用キャリアの前記保持孔に前記ウェーハを保持し、前記両面研磨装置の前記上下定盤の間に挟み込んで前記上下定盤を回転させることにより、前記ウェーハの両面研磨を行い、該両面研磨後の前記ウェーハのエッジにおけるＺＤＤの表裏差を５ｎｍ以下とすることを特徴とするウェーハの両面研磨方法。     It is a double-sided polishing method for wafers.
    The wafer is held in the holding hole of the carrier for a double-sided polishing machine manufactured by the method for manufacturing a carrier for a double-sided polishing machine according to any one of claims 1 to 3, and the upper and lower surface plates of the double-sided polishing machine are fixed. A wafer characterized in that double-sided polishing of the wafer is performed by sandwiching it between plates and rotating the upper and lower surface plates, and the front-back difference of ZDD at the edge of the wafer after double-sided polishing is 5 nm or less. Double-sided polishing method.
  5. 　前記両面研磨において、荷重が２段以上の多段である両面研磨を行うことを特徴とする請求項４に記載のウェーハの両面研磨方法。 The double-sided polishing method for a wafer according to claim 4, wherein in the double-sided polishing, double-sided polishing in which a load is two or more stages is performed.
  6. 　前記両面研磨において、前記２段以上の多段の１段目の荷重を１５０ｇｆ／ｃｍ２以上２５０ｇｆ／ｃｍ２以下とすることを特徴とする請求項５に記載のウェーハの両面研磨方法。 The double-sided polishing method for a wafer according to claim 5, wherein in the double-sided polishing, the load of the first stage of the two or more stages is 150 gf / cm 2 or more and 250 gf / cm 2 or less.
  7. 　前記両面研磨において、前記２段以上の多段の１段目の荷重を、２段目の荷重より大きくすることを特徴とする請求項５または請求項６に記載のウェーハの両面研磨方法。 The double-sided polishing method for a wafer according to claim 5 or 6, wherein in the double-sided polishing, the load of the first stage of the two or more stages is made larger than the load of the second stage.
PCT/JP2021/010649 2020-05-19 2021-03-16 Method for manufacturing carrier for double-side polishing device, carrier for double-side polishing device, and method for wafer double-side polishing WO2021235066A1 (en)

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JP2017170536A (en) * 2016-03-18 2017-09-28 信越半導体株式会社 Method for manufacturing carrier for double-sided polishing device and wafer double-sided polishing method

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