JP2011240460A - Carrier for double-side polishing apparatus and double-side polishing apparatus using the same, and double-side polishing method - Google Patents

Carrier for double-side polishing apparatus and double-side polishing apparatus using the same, and double-side polishing method Download PDF

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JP2011240460A
JP2011240460A JP2010116582A JP2010116582A JP2011240460A JP 2011240460 A JP2011240460 A JP 2011240460A JP 2010116582 A JP2010116582 A JP 2010116582A JP 2010116582 A JP2010116582 A JP 2010116582A JP 2011240460 A JP2011240460 A JP 2011240460A
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wafer
double
side polishing
carrier
resin
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JP5494224B2 (en
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Kazuya Sato
一弥 佐藤
Junichi Ueno
淳一 上野
Shuichi Kobayashi
修一 小林
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Shin Etsu Handotai Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a carrier for a double-side polishing apparatus, a double-side polishing apparatus and a double-side polishing method which suppress deterioration in the shape of a chamfered portion of a wafer, and the occurrence of scratches in the plane of the wafer and the chamfered portion while preventing the breakage of a peripheral edge of the wafer.SOLUTION: The carrier for the double-side polishing apparatus for polishing double sides of a wafer having a chamfered portion at its peripheral edge includes at least a carrier base body which is disposed between upper and lower surface plates having polishing cloths attached thereto, respectively, and has a holding hole for holding the wafer sandwiched between the upper and lower surface plates during the polishing of the wafer, and a ring-shaped resin ring which is disposed along the inner circumference of the holding hole in the carrier base body, and brought into contact with the chamfered portion of the wafer to be held to protect the chamfered portion. The tensile modulus of the resin ring based on the tensile test in compliance with ASTM D638 is ≥12 GPa and ≤20 GPa, and the resin ring is formed of the resin not containing any inorganic reinforcing material.

Description

本発明は、両面研磨装置において、ウェーハを研磨する際にウェーハを保持する両面研磨装置用キャリア及びこのキャリアを具備する装置を用いた両面研磨方法に関する。   The present invention relates to a double-side polishing apparatus carrier for holding a wafer when polishing the wafer in a double-side polishing apparatus, and a double-side polishing method using the apparatus including the carrier.

ウェーハの両面をポリッシング等で同時に研磨する際、両面研磨装置用キャリアによってウェーハを保持している。この両面研磨装置用キャリアは、ウェーハより薄い厚みに形成され、両面研磨装置の上定盤と下定盤の間の所定位置にウェーハを保持するための保持孔を備えている。この保持孔にウェーハが挿入されて保持され、上定盤と下定盤の対向面に設けられた研磨布等の研磨具でウェーハの上下面が挟み込まれ、研磨面に研磨剤を供給しながら両面同時に研磨が行われる。   When simultaneously polishing both surfaces of the wafer by polishing or the like, the wafer is held by a carrier for a double-side polishing apparatus. The carrier for a double-side polishing apparatus is formed with a thickness thinner than that of the wafer, and includes a holding hole for holding the wafer at a predetermined position between the upper and lower surface plates of the double-side polishing apparatus. The wafer is inserted and held in this holding hole, and the upper and lower surfaces of the wafer are sandwiched by polishing tools such as polishing cloth provided on the opposing surfaces of the upper and lower surface plates, and both surfaces are supplied while supplying the polishing agent to the polishing surface. At the same time, polishing is performed.

ここで、このようなウェーハの両面研磨に使用している両面研磨装置用キャリアは、金属製のものが主流である。
このため、ウェーハの周縁部を金属製の両面研磨装置用キャリアによるダメージから保護するために樹脂リングが保持孔の内周部に沿って取り付けられている。
このように、キャリアの保持孔とウェーハの間に樹脂リングを取り付けて研磨することでウェーハの周縁部が破損するのを防ぐことができる。
Here, the carrier for the double-side polishing apparatus used for double-side polishing of such a wafer is mainly made of metal.
For this reason, in order to protect the peripheral part of a wafer from the damage by the metal carrier for double-side polish apparatuses, the resin ring is attached along the inner peripheral part of a holding hole.
In this way, it is possible to prevent the peripheral edge of the wafer from being damaged by attaching and polishing the resin ring between the holding hole of the carrier and the wafer.

通常、ウェーハの周縁には面取りが施されており、上述のようにして周縁に面取り部を有するウェーハの両面研磨を行う場合、ウェーハと樹脂リングとの接触によってウェーハの周縁部が摩耗し、面取り形状が悪化するという問題があった。
このような問題に対し、ウェーハの面取り形状の悪化を抑制することを目的として、エポキシ樹脂製のキャリアの保持孔のウェーハが接する内端面の形状を、ウェーハの面取り部と同様の形状に形成した両面研磨用キャリア(特許文献1参照)、また、ワーク保持孔の周縁部分が含まれる領域を、樹脂を含浸したガラス繊維を同心円状に配向して構成し、ワーク保持孔の内周面に曲面凹部を形成した研磨機用キャリア(特許文献2参照)が開示されている。
Normally, the periphery of the wafer is chamfered, and when performing double-side polishing of a wafer having a chamfered portion on the periphery as described above, the peripheral portion of the wafer is worn by contact between the wafer and the resin ring, and the chamfering is performed. There was a problem that the shape deteriorated.
In order to suppress the deterioration of the chamfered shape of the wafer against such problems, the shape of the inner end surface with which the wafer is held in the holding hole of the carrier made of epoxy resin was formed in the same shape as the chamfered portion of the wafer. A carrier for double-side polishing (see Patent Document 1) and a region including the peripheral portion of the work holding hole are configured by concentrically orienting glass fibers impregnated with resin, and curved on the inner peripheral surface of the work holding hole. A polishing machine carrier (see Patent Document 2) in which a recess is formed is disclosed.

特開平8−197416号公報JP-A-8-197416 特開2000−301451号公報JP 2000-301451 A

しかしながら、このような従来のキャリアを用いて面取り部を有するウェーハの両面研磨を行っても、周縁部の摩耗をある程度は抑制できるものの、依然として面取り形状が変形して悪化してしまっていた。
さらに、キャリアによってはウェーハ面内又は面取り部にスクラッチが発生してしまうという問題もあった。
However, even if double-side polishing of a wafer having a chamfered portion is performed using such a conventional carrier, although the wear of the peripheral portion can be suppressed to some extent, the chamfered shape is still deformed and deteriorated.
Furthermore, depending on the carrier, there is a problem that scratches occur in the wafer surface or in the chamfered portion.

そこで、本発明者等は、ウェーハの面取り形状の悪化及びウェーハ面内又は面取り部におけるスクラッチの発生原因について調査するための実験を行い、検討を重ねた。その結果、樹脂リングの材質として引張弾性率が小さいものを用いた場合、ウェーハの面取り形状が悪化することを知見した。また、樹脂リングの材質がガラス繊維や無機フィラー等の無機系強化材を含むものである場合、ウェーハの研磨中にその強化材が細かく破砕され、ウェーハ面内又は面取り部にスクラッチを発生させるということが明らかになった。   Therefore, the inventors conducted experiments for investigating the deterioration of the chamfered shape of the wafer and the cause of occurrence of scratches in the wafer surface or in the chamfered portion, and repeated investigations. As a result, it was found that the chamfered shape of the wafer deteriorates when a resin ring having a low tensile elastic modulus is used. Further, when the material of the resin ring includes an inorganic reinforcing material such as glass fiber or inorganic filler, the reinforcing material is finely crushed during the polishing of the wafer, and scratches are generated in the wafer surface or in the chamfered portion. It was revealed.

本発明は前述のような問題に鑑みてなされたもので、ウェーハの周縁部の破損を防ぎつつ、ウェーハの面取り形状の悪化及びウェーハ面内や面取り部におけるスクラッチの発生を抑制することができる両面研磨装置用キャリア及びこれを用いた両面研磨装置並びに両面研磨方法を提供することを目的とする。   The present invention has been made in view of the above-described problems, and is capable of suppressing the deterioration of the chamfered shape of the wafer and the generation of scratches in the wafer surface or in the chamfered portion while preventing damage to the peripheral portion of the wafer. It is an object of the present invention to provide a carrier for a polishing apparatus, a double-side polishing apparatus and a double-side polishing method using the same.

上記目的を達成するために、本発明によれば、周縁に面取り部を有するウェーハの両面を研磨する両面研磨装置における両面研磨装置用キャリアであって、少なくとも、研磨布が貼付された上下定盤の間に配設され、研磨の際に前記上下定盤の間に挟まれる前記ウェーハを保持するための保持孔が形成されたキャリア母体と、該キャリア母体の保持孔の内周に沿って配置され、前記保持されるウェーハの面取り部と接して該面取り部を保護するリング状の樹脂リングとを具備し、前記樹脂リングは、ASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、無機系強化材を含まない樹脂より成るものであることを特徴とする両面研磨装置用キャリアが提供される。   In order to achieve the above object, according to the present invention, there is provided a carrier for a double-side polishing apparatus in a double-side polishing apparatus for polishing both surfaces of a wafer having a chamfered portion at the periphery, at least an upper and lower surface plate to which a polishing cloth is stuck And a carrier base having a holding hole for holding the wafer sandwiched between the upper and lower surface plates during polishing, and an inner periphery of the holding hole of the carrier base A ring-shaped resin ring that is in contact with the chamfered portion of the held wafer and protects the chamfered portion, and the resin ring has a tensile modulus of elasticity of 12 GPa or more based on a tensile test based on ASTM D638, There is provided a carrier for a double-side polishing apparatus characterized by being made of a resin that is 20 GPa or less and does not contain an inorganic reinforcing material.

このように、前記樹脂リングが、ASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、無機系強化材を含まない樹脂より成るものであれば、ウェーハの周縁部の破損を防ぎつつ、ウェーハの面取り形状の悪化及びウェーハ面内や面取り部におけるスクラッチの発生を抑制できる両面研磨装置用キャリアとなる。これにより製品歩留まりを向上できるものとなる。   Thus, if the resin ring has a tensile elastic modulus of 12 GPa or more and 20 GPa or less based on a tensile test based on ASTM D638 and is made of a resin not containing an inorganic reinforcing material, It becomes a carrier for a double-side polishing apparatus capable of suppressing the deterioration of the chamfered shape of the wafer and the generation of scratches in the wafer surface or in the chamfered portion while preventing breakage. As a result, the product yield can be improved.

このとき、前記ASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、無機系強化材を含まない樹脂として、具体的に、木粉充填フェノール樹脂、チップド・ロービング充填不飽和ポリエステル樹脂、ポリアミドイミド樹脂、アリル樹脂、全芳香族液晶ポリエステル樹脂のいずれかを用いることができる。   At this time, the tensile modulus based on the tensile test based on the ASTM D638 is 12 GPa or more and 20 GPa or less, and specifically, as a resin not containing an inorganic reinforcing material, specifically, wood powder-filled phenol resin, chipped roving filling failure Any of a saturated polyester resin, a polyamideimide resin, an allyl resin, and a wholly aromatic liquid crystal polyester resin can be used.

また、本発明によれば、少なくとも、前記本発明に係る両面研磨装置用キャリアを具備した両面研磨装置が提供される。
このように、前記本発明に係る両面研磨装置用キャリアを具備した両面研磨装置を用いてウェーハの両面研磨を行えば、研磨するウェーハの周縁部の破損を防ぎつつ、ウェーハの面取り形状の悪化及びウェーハ面内や面取り部におけるスクラッチの発生を抑制して、ウェーハの両面研磨を行うことができる。
Moreover, according to this invention, the double-side polish apparatus provided with the carrier for double-side polish apparatuses which concerns on the said this invention at least is provided.
Thus, if double-side polishing of the wafer is performed using the double-side polishing apparatus provided with the carrier for double-side polishing apparatus according to the present invention, the chamfered shape of the wafer is deteriorated while preventing damage to the peripheral edge of the wafer to be polished. It is possible to perform double-side polishing of the wafer while suppressing the generation of scratches in the wafer surface or in the chamfered portion.

また、本発明によれば、ウェーハを両面研磨する方法であって、研磨布が貼付された上下定盤の間に上記本発明の両面研磨装置用キャリアを配設し、該キャリアの保持孔の内周に配置された、ASTM D638引張試験による引張弾性率が12GPa以上、20GPa以下である樹脂より成る樹脂リングと前記ウェーハの面取り部とを接触させて保持し、前記上下定盤の間にウェーハを挟み込んで両面研磨することを特徴とするウェーハの両面研磨方法が提供される。   Further, according to the present invention, there is provided a method for polishing a wafer on both sides, wherein the carrier for a double-side polishing apparatus of the present invention is disposed between upper and lower surface plates to which a polishing cloth is attached, and the holding holes of the carrier are provided. A resin ring made of a resin having a tensile modulus of elasticity of 12 GPa or more and 20 GPa or less according to ASTM D638 tensile test disposed on the inner periphery is held in contact with the chamfered portion of the wafer, and the wafer is placed between the upper and lower surface plates. A double-side polishing method for a wafer is provided, characterized in that the double-side polishing is performed with the wafer sandwiched therebetween.

このように、キャリアの保持孔の内周に配置された、ASTM D638引張試験による引張弾性率が12GPa以上、20GPa以下である樹脂より成る樹脂リングと前記ウェーハの面取り部とを接触させて保持し、前記上下定盤の間にウェーハを挟み込んで両面研磨すれば、ウェーハの周縁部の破損を防ぎつつ、ウェーハの面取り形状の悪化及びウェーハ面内や面取り部におけるスクラッチの発生を抑制することができる。これにより製品歩留まりを向上できる。   As described above, the resin ring made of a resin having a tensile elastic modulus of 12 GPa or more and 20 GPa or less by the ASTM D638 tensile test arranged on the inner periphery of the carrier holding hole is held in contact with the chamfered portion of the wafer. If the wafer is sandwiched between the upper and lower surface plates and polished on both sides, damage to the peripheral portion of the wafer can be prevented, and deterioration of the chamfered shape of the wafer and occurrence of scratches in the wafer surface and in the chamfered portion can be suppressed. . Thereby, the product yield can be improved.

本発明の両面研磨装置用キャリアは、ASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、無機系強化材を含まない樹脂より成る樹脂リングを具備するので、ウェーハの周縁部の破損を防ぎつつ、ウェーハの面取り形状の悪化及びウェーハ面内や面取り部におけるスクラッチの発生を抑制できる。   The carrier for a double-side polishing apparatus of the present invention has a resin ring made of a resin having a tensile elastic modulus of 12 GPa or more and 20 GPa or less based on a tensile test based on ASTM D638, and does not contain an inorganic reinforcing material. While preventing the peripheral edge from being damaged, it is possible to suppress the deterioration of the chamfered shape of the wafer and the generation of scratches in the wafer surface or in the chamfered portion.

本発明の両面研磨装置の一例を示した概略断面図である。It is the schematic sectional drawing which showed an example of the double-side polish apparatus of this invention. 平面視による本発明の両面研磨装置の内部構造図である。It is an internal structure figure of the double-side polish apparatus of this invention by planar view. 本発明の両面研磨装置用キャリアの一例を示した概略図である。It is the schematic which showed an example of the carrier for double-side polish apparatuses of this invention. ウェーハの周縁部(面取り部)が本発明の両面研磨装置用キャリアの樹脂リングの内周面と接触した様子を表わした説明図である。It is explanatory drawing showing a mode that the peripheral part (chamfering part) of the wafer contacted the internal peripheral surface of the resin ring of the carrier for double-side polish apparatuses of this invention. 実施例1における研磨後のウェーハの周縁部の形状を示す図である。It is a figure which shows the shape of the peripheral part of the wafer after grinding | polishing in Example 1. FIG. 比較例1における研磨後のウェーハの周縁部の形状を示す図である。It is a figure which shows the shape of the peripheral part of the wafer after grinding | polishing in the comparative example 1. FIG. 比較例2における研磨後のウェーハの周縁部の形状を示す図である。It is a figure which shows the shape of the peripheral part of the wafer after grinding | polishing in the comparative example 2. FIG.

以下、本発明について実施の形態を説明するが、本発明はこれに限定されるものではない。
従来、周縁に面取り部を有するウェーハの両面研磨を行う際、キャリアとウェーハとの接触によってウェーハの周縁部が摩耗し、面取り形状が悪化するという問題があった。この問題に対し、ウェーハの面取り形状の悪化を抑制するため、エポキシ樹脂製や樹脂を含浸したガラス繊維製のキャリアの保持孔の内周面に曲面凹部を形成した両面研磨装置用キャリアが知られているが、このようなキャリアを用いても、依然として面取り形状が悪化する場合があった。さらに、キャリアの材質によってはウェーハ面内又は面取り部にスクラッチが発生するという問題もあった。
Hereinafter, although an embodiment is described about the present invention, the present invention is not limited to this.
Conventionally, when performing double-side polishing of a wafer having a chamfered portion at the periphery, there has been a problem that the peripheral portion of the wafer is worn by contact between the carrier and the wafer, and the chamfered shape deteriorates. For this problem, a double-side polishing machine carrier is known in which a curved concave portion is formed on the inner peripheral surface of a holding hole of a glass fiber carrier impregnated with an epoxy resin or a resin in order to suppress deterioration of the chamfered shape of the wafer. However, even when such a carrier is used, the chamfered shape may still deteriorate. Further, depending on the material of the carrier, there is a problem that scratches occur in the wafer surface or in the chamfered portion.

そこで、本発明者等はこのような問題を解決すべく鋭意検討を重ねた。その結果、樹脂リングの材質として引張弾性率が小さいものを用いた場合、ウェーハの面取り形状が悪化することを知見した。また、樹脂リングの引張弾性率は、例えばガラス繊維や無機フィラー等を強化材として含めることで高くすることができるが、この場合、ウェーハの研磨中にその強化材が細かく破砕され、それがウェーハ面内又は面取り部におけるスクラッチの原因となっていることが明らかになった。   Therefore, the present inventors have made extensive studies to solve such problems. As a result, it was found that the chamfered shape of the wafer deteriorates when a resin ring having a low tensile elastic modulus is used. In addition, the tensile modulus of elasticity of the resin ring can be increased by including, for example, glass fiber or inorganic filler as a reinforcing material. In this case, the reinforcing material is finely crushed during the polishing of the wafer, which is the wafer. It became clear that it was a cause of scratches in the in-plane or chamfer.

そして、本発明者等はさらに実験を重ね、樹脂リングをASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、無機系強化材を含まない樹脂より成るものとすれば、ウェーハの周縁部の破損を防ぎつつ、ウェーハの面取り部の摩耗による形状変化を抑制でき、さらにウェーハ面内や面取り部におけるスクラッチの発生も抑制できることを知見し、本発明を完成させた。   Then, the inventors further experimented, and if the resin ring is made of a resin having a tensile modulus of elasticity of 12 GPa or more and 20 GPa or less based on a tensile test based on ASTM D638 and not containing an inorganic reinforcing material. The inventors have found that the change in shape due to wear of the chamfered portion of the wafer can be suppressed while preventing the peripheral edge of the wafer from being damaged, and the occurrence of scratches in the wafer surface and the chamfered portion can also be suppressed, thereby completing the present invention.

ここで、図1に本発明の両面研磨装置用キャリアを具備した両面研磨装置の概略断面図、図2に平面視による両面研磨装置の内部構造図を示す。   Here, FIG. 1 is a schematic sectional view of a double-side polishing apparatus provided with the carrier for double-side polishing apparatus of the present invention, and FIG. 2 is an internal structural view of the double-side polishing apparatus in plan view.

図1、図2に示すように、本発明の両面研磨装置用キャリア1を具備した両面研磨装置20は、上下に相対向して設けられた上定盤6と下定盤7を備えており、各定盤6、7の対向面側には、それぞれ研磨布5が貼付されている。そして上定盤6と下定盤7の間の中心部にはサンギヤ9が、周縁部にはインターナルギヤ10が設けられている。ウェーハWは両面研磨装置用キャリア1の保持孔4に保持され、上定盤6と下定盤7の間に挟まれている。   As shown in FIGS. 1 and 2, a double-side polishing apparatus 20 provided with the carrier 1 for a double-side polishing apparatus of the present invention includes an upper surface plate 6 and a lower surface plate 7 provided opposite to each other in the vertical direction, A polishing cloth 5 is affixed to the opposing surface side of each of the surface plates 6 and 7. A sun gear 9 is provided at the center between the upper surface plate 6 and the lower surface plate 7, and an internal gear 10 is provided at the peripheral portion. The wafer W is held in the holding hole 4 of the carrier 1 for double-side polishing apparatus, and is sandwiched between the upper surface plate 6 and the lower surface plate 7.

また、サンギヤ9及びインターナルギヤ10の各歯部には両面研磨装置用キャリア1の外周歯が噛合しており、上定盤6及び下定盤7が不図示の駆動源によって回転されるのに伴い、両面研磨装置用キャリア1は自転しつつサンギヤ9の周りを公転する。このときウェーハWは両面研磨装置用キャリア1の保持孔4で保持されており、上下の研磨布5により両面を同時に研磨される。また、研磨時には、不図示のノズルから研磨液が供給される。   The teeth of the sun gear 9 and the internal gear 10 are engaged with the outer peripheral teeth of the double-side polishing machine carrier 1, and the upper surface plate 6 and the lower surface plate 7 are rotated by a drive source (not shown). Accordingly, the carrier 1 for double-side polishing apparatus revolves around the sun gear 9 while rotating. At this time, the wafer W is held in the holding holes 4 of the carrier 1 for a double-side polishing apparatus, and both sides are simultaneously polished by the upper and lower polishing cloths 5. In polishing, a polishing liquid is supplied from a nozzle (not shown).

図3に示すように、両面研磨装置用キャリア1はウェーハWを保持するための保持孔4が形成された金属製のキャリア母体3を有している。そして、そのキャリア母体3の保持孔4の内周面に沿って樹脂リング2が配置されている。
本発明の両面研磨装置用キャリアにおける樹脂リング2は、ASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、例えば、ガラス繊維や無機フィラー等のような無機系強化材を含まない樹脂より成るものである。
As shown in FIG. 3, the double-side polishing apparatus carrier 1 has a metal carrier base 3 in which a holding hole 4 for holding a wafer W is formed. A resin ring 2 is arranged along the inner peripheral surface of the holding hole 4 of the carrier base 3.
The resin ring 2 in the carrier for a double-side polishing apparatus according to the present invention has a tensile elastic modulus of 12 GPa or more and 20 GPa or less based on a tensile test based on ASTM D638. It is made of a resin that does not contain.

このような樹脂リング2が内周面に配置された両面研磨装置用キャリア1の保持孔4にウェーハWが挿入されて保持されるようになっている。この樹脂リング2により、研磨中にウェーハWが金属性のキャリア母体3と接触することによってウェーハWの周縁部にクラック等のダメージが発生するのを防ぐことができる。
ここで、図4にウェーハWが両面研磨装置用キャリア1の保持孔4に挿入され、ウェーハWの周縁部が樹脂リング2の内周面と接触した様子を示す。
図4に示すように、研磨するウェーハWの周縁部には面取りが施されており、面取り部8を有している。この面取り部8を有するウェーハWの周縁部を樹脂リング2の内周と接触させてウェーハWを保持する。
The wafer W is inserted and held in the holding hole 4 of the carrier 1 for double-side polishing apparatus in which such a resin ring 2 is disposed on the inner peripheral surface. The resin ring 2 can prevent the wafer W from coming into contact with the metallic carrier base 3 during polishing to cause damage such as cracks in the peripheral edge of the wafer W.
Here, FIG. 4 shows a state in which the wafer W is inserted into the holding hole 4 of the carrier 1 for double-side polishing apparatus, and the peripheral portion of the wafer W is in contact with the inner peripheral surface of the resin ring 2.
As shown in FIG. 4, the peripheral portion of the wafer W to be polished is chamfered and has a chamfered portion 8. The periphery of the wafer W having the chamfered portion 8 is brought into contact with the inner periphery of the resin ring 2 to hold the wafer W.

ここで、図4に示す樹脂リング2の内周面は平坦に形成されている。この内周面は、ウェーハWの研磨を繰返し行っていくと、次第にウェーハWの面取り部8の形状に沿った凹形状となる。或いは、最初からウェーハWの面取り部8の形状に沿った凹形状に形成しておいても良い。本発明において樹脂リング2の内周面の形状は特に限定されない。
従来の引張弾性率が12GPa未満の軟らかい樹脂から成る樹脂リングを用いた場合、その樹脂リングが、例え上記したようなウェーハWの面取り部8の形状に沿った凹形状に形成された内周面を有していたとしても、ウェーハWの周縁部は、特にその厚さ方向の中心付近において、摩耗によってウェーハWの内側方向へ凹んだ形状に変形し、面取り形状が悪化てしまう。
Here, the inner peripheral surface of the resin ring 2 shown in FIG. 4 is formed flat. When the polishing of the wafer W is repeatedly performed, the inner peripheral surface gradually becomes a concave shape along the shape of the chamfered portion 8 of the wafer W. Or you may form in the concave shape along the shape of the chamfered part 8 of the wafer W from the beginning. In the present invention, the shape of the inner peripheral surface of the resin ring 2 is not particularly limited.
When a conventional resin ring made of a soft resin having a tensile modulus of elasticity of less than 12 GPa is used, the resin ring is formed in a concave shape along the shape of the chamfered portion 8 of the wafer W as described above. Even if it has, the peripheral part of the wafer W is deformed into a shape recessed toward the inner side of the wafer W due to wear, particularly in the vicinity of the center in the thickness direction, and the chamfered shape deteriorates.

本発明の両面研磨装置用キャリアでは、樹脂リング2に引張弾性率が12GPa以上の樹脂を用いているので、ウェーハWの面取り部8の摩耗による変形を抑制することができる。また、引張弾性率が20GPa以下であるので、樹脂リング2の硬さによってウェーハWの周縁部にクラック等のダメージが発生することもない。
さらに、本発明の樹脂リング2は無機系強化材を含まないので、無機系強化材が細かく破砕されることによるウェーハ面内又は面取り部8におけるスクラッチの発生を抑制することもできる。
In the carrier for a double-side polishing apparatus of the present invention, since the resin ring 2 uses a resin having a tensile modulus of elasticity of 12 GPa or more, deformation due to wear of the chamfered portion 8 of the wafer W can be suppressed. Further, since the tensile elastic modulus is 20 GPa or less, damage such as cracks does not occur in the peripheral portion of the wafer W due to the hardness of the resin ring 2.
Furthermore, since the resin ring 2 of the present invention does not include an inorganic reinforcing material, it is possible to suppress the generation of scratches in the wafer surface or the chamfered portion 8 due to the inorganic reinforcing material being finely crushed.

このとき、前記ASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、無機系強化材を含まない樹脂としては、木粉充填フェノール樹脂、チップド・ロービング充填不飽和ポリエステル樹脂、ポリアミドイミド樹脂、アリル樹脂などの熱硬化性樹脂、全芳香族液晶ポリエステル樹脂などの熱可塑性樹脂を用いることができる。
一般的に、無機系強化材を含まない樹脂の中では全芳香族液晶ポリエステル樹脂が最も高い引張弾性率(19.69GPa)を有していることから、本発明のウェーハWの面取り形状の変形と、ウェーハ面内又は面取り部8におけるスクラッチの発生を抑制する効果を同時に奏するためには、引張弾性率は20GPa以下である必要がある。
At this time, as a resin having a tensile modulus of elasticity of 12 GPa or more and 20 GPa or less based on a tensile test based on the ASTM D638 and does not include an inorganic reinforcing material, wood powder-filled phenol resin, chipped roving-filled unsaturated polyester resin Thermosetting resins such as polyamideimide resin and allyl resin, and thermoplastic resins such as wholly aromatic liquid crystal polyester resin can be used.
In general, the wholly aromatic liquid crystalline polyester resin has the highest tensile elastic modulus (19.69 GPa) among the resins not including the inorganic reinforcing material, and therefore the deformation of the chamfered shape of the wafer W of the present invention. In order to simultaneously exhibit the effect of suppressing the generation of scratches in the wafer surface or in the chamfered portion 8, the tensile elastic modulus needs to be 20 GPa or less.

このような樹脂リング2は、例えば、樹脂を押出成形でシート状に成形してからリング状に加工し、キャリア母材3に嵌め込むことで両面研磨装置用キャリア1に装着することができる。或いは、樹脂のペレットを原料とし、キャリア母材3に直接射出形成して装着しても良い。   Such a resin ring 2 can be attached to the carrier 1 for a double-side polishing apparatus by forming the resin into a sheet shape by extrusion molding, then processing it into a ring shape, and fitting the resin ring 2 into the carrier base material 3. Alternatively, resin pellets may be used as raw materials and directly injection-molded and mounted on the carrier base material 3.

なお、図2、図3では各両面研磨装置用キャリア1がそれぞれ1枚のウェーハWを保持するようになっているが、複数の保持孔4を有する両面研磨装置用キャリアとすることもでき、各両面研磨装置用キャリア内に複数枚のウェーハWを保持してもよい。   2 and 3, each double-side polishing apparatus carrier 1 holds one wafer W, but it can also be a double-side polishing apparatus carrier having a plurality of holding holes 4. A plurality of wafers W may be held in each double-side polishing machine carrier.

次に、本発明のウェーハの両面研磨方法について以下に説明する。
本発明のウェーハの両面研磨方法は、ASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、無機系強化材を含まない樹脂より成る樹脂リング2を有した図3に示すような両面研磨装置用キャリア1、及びその両面研磨装置用キャリア1を具備した図1に示すような両面研磨装置20を用い、まず、両面研磨装置20の研磨布5が貼付された上下定盤6、7の間に両面研磨装置用キャリア1を配設する。
Next, the double-side polishing method for a wafer of the present invention will be described below.
The wafer double-side polishing method of the present invention has a resin ring 2 made of a resin having a tensile modulus of elasticity of 12 GPa or more and 20 GPa or less based on a tensile test based on ASTM D638 and not containing an inorganic reinforcing material. A double-side polishing apparatus carrier 1 as shown in FIG. 1 and a double-side polishing apparatus 20 as shown in FIG. 1 equipped with the double-side polishing apparatus carrier 1 are used. A carrier 1 for a double-side polishing apparatus is disposed between the boards 6 and 7.

次に、両面研磨装置用キャリア1の保持孔4にウェーハWを挿入し、両面研磨装置用キャリア1の保持孔4の内周に配置された樹脂リング2とウェーハWの面取り部8を有する周縁部とを接触させて保持する。
そして、上下定盤6、7に貼付された研磨布5でウェーハWの上下研磨面を挟み込み、研磨面に研磨剤を供給しながらウェーハの両面研磨を行う。
Next, the wafer W is inserted into the holding hole 4 of the carrier 1 for double-side polishing apparatus, and the peripheral edge having the chamfered portion 8 of the resin ring 2 and the wafer W disposed on the inner periphery of the holding hole 4 of the carrier 1 for double-side polishing apparatus Hold the part in contact.
Then, the upper and lower polishing surfaces of the wafer W are sandwiched between the polishing cloths 5 affixed to the upper and lower surface plates 6 and 7, and both surfaces of the wafer are polished while supplying an abrasive to the polishing surface.

このようにして研磨すれば、ウェーハの周縁部の破損を防ぎつつ、ウェーハの面取り形状の悪化及びウェーハ面内や面取り部におけるスクラッチの発生を抑制することができる。これにより製品歩留まりを向上できる。   By polishing in this way, it is possible to suppress the deterioration of the chamfered shape of the wafer and the generation of scratches in the wafer surface or in the chamfered portion while preventing damage to the peripheral edge of the wafer. Thereby, the product yield can be improved.

以下、本発明の実施例及び比較例を示して本発明をより具体的に説明するが、本発明はこれらに限定されるものではない。   EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples of the present invention, but the present invention is not limited to these.

(実施例1−3)
図3に示すような両面研磨装置用キャリアを具備した図1のような両面研磨装置を用いて、直径300mmのシリコンウェーハ200枚を本発明の両面研磨方法に従って両面研磨した。両面研磨装置用キャリアの樹脂リングの材質を、全芳香族液晶ポリエステル樹脂(実施例1)、アリル樹脂(実施例2)、木粉充填フェノール樹脂(実施例3)とし、それぞれの場合の研磨後のウェーハの周縁部の形状と、面内及び面取り部におけるキズの発生率を評価した。
(Example 1-3)
Using a double-side polishing apparatus as shown in FIG. 1 having a double-side polishing apparatus carrier as shown in FIG. 3, 200 silicon wafers having a diameter of 300 mm were double-side polished according to the double-side polishing method of the present invention. The material of the resin ring of the carrier for the double-side polishing apparatus is a wholly aromatic liquid crystal polyester resin (Example 1), an allyl resin (Example 2), and a wood powder-filled phenol resin (Example 3), and after polishing in each case The shape of the peripheral portion of the wafer and the occurrence rate of scratches in the in-plane and chamfered portions were evaluated.

ここで、両面研磨装置用キャリアの作製時に、樹脂リングに用いたそれぞれの材質の引張試験を行い、引張弾性率を測定した。
この引張弾性率の測定は、ASTM D638に準拠した引張試験に基づき行い、引張試験機は、試験中にクロスヘッドの移動速度を一定に保つもので、つかみ具、荷重指示計、伸び計により構成されるものを用いた。
Here, at the time of producing the carrier for the double-side polishing apparatus, a tensile test of each material used for the resin ring was performed, and the tensile elastic modulus was measured.
This tensile modulus is measured based on a tensile test in accordance with ASTM D638. The tensile tester keeps the moving speed of the crosshead constant during the test and consists of a gripper, a load indicator, and an extensometer. We used what was to be done.

また、試験片は代表的な形状として、ダンベル形状のものを用い、引張速度は5mm/secとした。引張弾性率は、引張応力−ひずみ曲線の初めの直線部分を用いて次の式により算出した。ただし、Eは引張弾性率、σは直線上の2点間の元の平均断面積による応力の差、εは同じ2点間のひずみの差である。
E=σ/ε
Moreover, the test piece used the dumbbell-shaped thing as a typical shape, and the tensile speed was 5 mm / sec. The tensile elastic modulus was calculated by the following formula using the first linear portion of the tensile stress-strain curve. Where E is the tensile modulus, σ is the difference in stress due to the original average cross-sectional area between two points on the straight line, and ε is the difference in strain between the same two points.
E = σ / ε

また、ウェーハの周縁部の形状の評価は、研磨前のウェーハの最外周縁(ウェーハの厚み方向の中央)の位置と、研磨後に摩耗によって変形した部分の位置の差により行い、その位置の測定はTaylor Hobson社のLSM−3000を用いて行った。
また、キズの測定はKLA−TENCOR SURFSCAN SP−1により行った。
結果を表1に示す。表1に示すように実施例1−3のいずれも、上記した位置の差が極めて小さく、すなわちウェーハの周縁部の形状の変化はほとんどなく、面内及び面取り部におけるキズの発生率も十分に抑制されている。この結果は、後述する比較例1、2の結果と比べ、改善されていることが分かった。
Also, the shape of the peripheral edge of the wafer is evaluated by the difference between the position of the outermost peripheral edge (center in the thickness direction of the wafer) of the wafer before polishing and the position of the portion deformed due to wear after polishing. Was performed using Taylor Hobson's LSM-3000.
Scratches were measured with KLA-TENCOR SURFSCAN SP-1.
The results are shown in Table 1. As shown in Table 1, in all of Examples 1-3, the difference in position described above is extremely small, that is, there is almost no change in the shape of the peripheral edge of the wafer, and the occurrence rate of scratches in the in-plane and chamfered portions is also sufficient. It is suppressed. This result was found to be improved compared to the results of Comparative Examples 1 and 2 described later.

図5に実施例1におけるウェーハの周縁部の形状の測定結果を示す。図5はウェーハの周縁部を上向きにしてその位置を図上にプロットしたものである。図5からも分かるようにウェーハの周縁部は殆ど摩耗していない。
また、ウェーハの周縁部の破損も一切発生しなかった。
このように、本発明の両面研磨装置用キャリアを用いて両面研磨することにより、ウェーハの周縁部の破損を防ぎつつ、ウェーハの面取り形状の悪化及びウェーハ面内や面取り部におけるスクラッチ(キズ)の発生を抑制できることが確認できた。
FIG. 5 shows the measurement results of the shape of the peripheral edge of the wafer in Example 1. FIG. 5 shows the position plotted on the drawing with the peripheral edge of the wafer facing upward. As can be seen from FIG. 5, the peripheral edge of the wafer is hardly worn.
Further, no damage to the peripheral edge of the wafer occurred.
In this way, by performing double-side polishing using the carrier for a double-side polishing apparatus of the present invention, while preventing damage to the peripheral edge of the wafer, deterioration of the chamfered shape of the wafer and scratches (scratches) in the wafer surface or in the chamfered portion. It was confirmed that the occurrence could be suppressed.

(比較例1−3)
両面研磨装置用キャリアの樹脂リングの材質を、アラミド繊維強化エポキシ樹脂(比較例1)、ポリカーボネイト樹脂(比較例2)、ガラス繊維強化エポキシ樹脂(比較例3)とした以外、実施例1−3と同様な条件でシリコンウェーハを両面研磨し、実施例1−3と同様に評価した。ここで、アラミド繊維強化エポキシ樹脂、ポリカーボネイト樹脂の引張弾性率はそれぞれ9.00GPa、2.38GPaと12GPa未満であり、ガラス繊維強化エポキシ樹脂の引張弾性率は21.09GPaと20GPa以上である。
(Comparative Example 1-3)
Example 1-3, except that the resin ring material of the carrier for a double-side polishing apparatus was aramid fiber reinforced epoxy resin (Comparative Example 1), polycarbonate resin (Comparative Example 2), and glass fiber reinforced epoxy resin (Comparative Example 3) The silicon wafer was polished on both sides under the same conditions as in Example 1-3 and evaluated in the same manner as in Example 1-3. Here, the tensile elastic modulus of the aramid fiber reinforced epoxy resin and the polycarbonate resin is 9.00 GPa, 2.38 GPa and less than 12 GPa, respectively, and the tensile elastic modulus of the glass fiber reinforced epoxy resin is 21.09 GPa and 20 GPa or more.

その結果を表1に示す。表1に示すように、樹脂リングの引張弾性率が12GPa未満である比較例1、2では、実施例1−3に比べウェーハの周縁部の摩耗が大きく発生して面取り形状が悪化しており、引張弾性率が小さいほどその形状悪化が大きくなっていることが分かった。また、樹脂リングに強化材を含めた樹脂を用いた比較例1、3ではウェーハ面内及び面取り部にキズが多発していることが分かった。比較例3では、ウェーハの面取り形状は悪化していないものの、ウェーハ面内及び面取り部にキズが多発しており、歩留まりを悪化させてしまう。   The results are shown in Table 1. As shown in Table 1, in Comparative Examples 1 and 2 in which the tensile elastic modulus of the resin ring is less than 12 GPa, the wear on the peripheral edge of the wafer is greatly generated compared to Example 1-3, and the chamfered shape is deteriorated. It was found that the smaller the tensile modulus, the greater the deterioration of the shape. Further, it was found that in Comparative Examples 1 and 3 using a resin including a reinforcing material in the resin ring, scratches frequently occurred in the wafer surface and the chamfered portion. In Comparative Example 3, although the chamfered shape of the wafer is not deteriorated, scratches frequently occur in the wafer surface and the chamfered portion, and the yield is deteriorated.

図6、図7にそれぞれ比較例1、2におけるウェーハの周縁部の形状の測定結果を示す。図6、7は図5と同様にウェーハの周縁部を上向きにしてその位置を図上にプロットしたものである。
図6に示すように、比較例1において、ウェーハの周縁部が摩耗により変形し、ウェーハの内側に向って凹形状になっている様子が確認できた。また、図7に示すように、比較例2において、ウェーハの内側に向って大きく凹形状に変形している様子が確認できた。
6 and 7 show the measurement results of the shape of the peripheral edge of the wafer in Comparative Examples 1 and 2, respectively. 6 and 7 are the positions plotted on the drawing with the peripheral edge of the wafer facing upward as in FIG.
As shown in FIG. 6, in Comparative Example 1, it was confirmed that the peripheral edge of the wafer was deformed due to wear and was concave toward the inside of the wafer. Further, as shown in FIG. 7, in Comparative Example 2, it was confirmed that the wafer was greatly deformed into a concave shape toward the inside of the wafer.

Figure 2011240460
Figure 2011240460

なお、本発明は、上記実施形態に限定されるものではない。上記実施形態は例示であり、本発明の特許請求の範囲に記載された技術的思想と実質的に同一な構成を有し、同様な作用効果を奏するものは、いかなるものであっても本発明の技術的範囲に包含される。   The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

1…両面研磨装置用キャリア、 2…樹脂リング、 3…キャリア母体、
4…保持孔、 5…研磨布、 6…上定盤、 7…下定盤、 8…面取り部、
9…サンギア、 10…インターナルギア、 20…両面研磨装置、W…ウェーハ。
DESCRIPTION OF SYMBOLS 1 ... Carrier for double-side polishing apparatus, 2 ... Resin ring, 3 ... Carrier matrix,
4 ... holding hole, 5 ... polishing cloth, 6 ... upper surface plate, 7 ... lower surface plate, 8 ... chamfered portion,
9 ... Sun gear, 10 ... Internal gear, 20 ... Double-side polishing machine, W ... Wafer.

Claims (4)

周縁に面取り部を有するウェーハの両面を研磨する両面研磨装置における両面研磨装置用キャリアであって、少なくとも、研磨布が貼付された上下定盤の間に配設され、研磨の際に前記上下定盤の間に挟まれる前記ウェーハを保持するための保持孔が形成されたキャリア母体と、該キャリア母体の保持孔の内周に沿って配置され、前記保持されるウェーハの面取り部と接して該面取り部を保護するリング状の樹脂リングとを具備し、前記樹脂リングは、ASTM D638に準拠した引張試験に基づく引張弾性率が12GPa以上、20GPa以下であり、無機系強化材を含まない樹脂より成るものであることを特徴とする両面研磨装置用キャリア。   A carrier for a double-side polishing apparatus in a double-side polishing apparatus that polishes both surfaces of a wafer having a chamfered portion at the periphery, and is disposed at least between upper and lower surface plates to which a polishing cloth is attached, and the upper and lower surfaces are fixed during polishing. A carrier base in which a holding hole for holding the wafer sandwiched between the boards is formed, and an inner circumference of the holding hole of the carrier base, and is in contact with a chamfered portion of the held wafer. A ring-shaped resin ring that protects the chamfered portion, and the resin ring has a tensile elastic modulus based on a tensile test based on ASTM D638 of 12 GPa or more and 20 GPa or less, and does not contain an inorganic reinforcing material. A carrier for a double-side polishing apparatus, characterized by comprising: 前記樹脂リングは、木粉充填フェノール樹脂、チップド・ロービング充填不飽和ポリエステル樹脂、ポリアミドイミド樹脂、アリル樹脂、全芳香族液晶ポリエステル樹脂のいずれかより成るものであることを特徴とする請求項1に記載の両面研磨装置用キャリア。   2. The resin ring according to claim 1, wherein the resin ring is made of any one of wood powder-filled phenol resin, chipped roving-filled unsaturated polyester resin, polyamideimide resin, allyl resin, and wholly aromatic liquid crystal polyester resin. The carrier for double-side polishing apparatus as described. 少なくとも、請求項1又は請求項2に記載の両面研磨装置用キャリアを具備したものであることを特徴とする両面研磨装置。   A double-side polishing apparatus comprising at least the carrier for a double-side polishing apparatus according to claim 1 or 2. ウェーハを両面研磨する方法であって、研磨布が貼付された上下定盤の間に請求項1又は請求項2に記載の両面研磨装置用キャリアを配設し、該キャリアの保持孔の内周に配置された、ASTM D638引張試験による引張弾性率が12GPa以上、20GPa以下である樹脂より成る樹脂リングと前記ウェーハの面取り部とを接触させて保持し、前記上下定盤の間にウェーハを挟み込んで両面研磨することを特徴とするウェーハの両面研磨方法。   A method for double-side polishing a wafer, wherein the carrier for a double-side polishing apparatus according to claim 1 or 2 is disposed between upper and lower surface plates to which a polishing cloth is attached, and an inner periphery of a holding hole of the carrier A resin ring made of a resin having a tensile modulus of elasticity of 12 GPa or more and 20 GPa or less and a chamfered portion of the wafer placed in contact with each other and held by the chamfered portion of the wafer, and the wafer is sandwiched between the upper and lower surface plates A double-side polishing method for a wafer, characterized in that the double-side polishing is performed with a wafer.
JP2010116582A 2010-05-20 2010-05-20 Carrier for double-side polishing apparatus, double-side polishing apparatus and double-side polishing method using the same Active JP5494224B2 (en)

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WO2014038129A1 (en) * 2012-09-06 2014-03-13 信越半導体株式会社 Double surface polishing method
CN109015334A (en) * 2018-09-17 2018-12-18 杭州中芯晶圆半导体股份有限公司 Rigid material is reduced in a kind of process of lapping because collision leads to the method for rupture
WO2021235066A1 (en) * 2020-05-19 2021-11-25 信越半導体株式会社 Method for manufacturing carrier for double-side polishing device, carrier for double-side polishing device, and method for wafer double-side polishing

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WO2014038129A1 (en) * 2012-09-06 2014-03-13 信越半導体株式会社 Double surface polishing method
JP2014050913A (en) * 2012-09-06 2014-03-20 Shin Etsu Handotai Co Ltd Double-sided polishing method
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CN109015334A (en) * 2018-09-17 2018-12-18 杭州中芯晶圆半导体股份有限公司 Rigid material is reduced in a kind of process of lapping because collision leads to the method for rupture
WO2021235066A1 (en) * 2020-05-19 2021-11-25 信越半導体株式会社 Method for manufacturing carrier for double-side polishing device, carrier for double-side polishing device, and method for wafer double-side polishing
JP2021182586A (en) * 2020-05-19 2021-11-25 信越半導体株式会社 Manufacturing method of carrier for double-side polishing device and double-side polishing method of wafer
JP7276246B2 (en) 2020-05-19 2023-05-18 信越半導体株式会社 Method for manufacturing carrier for double-side polishing machine and method for polishing both sides of wafer

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