WO2021227812A1 - 天线装置、电子设备及用于天线装置的去耦方法 - Google Patents

天线装置、电子设备及用于天线装置的去耦方法 Download PDF

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Publication number
WO2021227812A1
WO2021227812A1 PCT/CN2021/088921 CN2021088921W WO2021227812A1 WO 2021227812 A1 WO2021227812 A1 WO 2021227812A1 CN 2021088921 W CN2021088921 W CN 2021088921W WO 2021227812 A1 WO2021227812 A1 WO 2021227812A1
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WIPO (PCT)
Prior art keywords
decoupling
transmission line
network
antenna unit
antenna
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PCT/CN2021/088921
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English (en)
French (fr)
Inventor
张帅
刘雨果
雍征东
路宝
Original Assignee
西安电子科技大学
Oppo广东移动通信有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from CN202010398708.2A external-priority patent/CN113659336B/zh
Application filed by 西安电子科技大学, Oppo广东移动通信有限公司 filed Critical 西安电子科技大学
Priority to EP21803422.1A priority Critical patent/EP4148906A4/en
Publication of WO2021227812A1 publication Critical patent/WO2021227812A1/zh
Priority to US17/985,535 priority patent/US20230077615A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/0006—Particular feeding systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
    • H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/24—Supports; Mounting means by structural association with other equipment or articles with receiving set
    • H01Q1/241—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM
    • H01Q1/242—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use
    • H01Q1/243—Supports; Mounting means by structural association with other equipment or articles with receiving set used in mobile communications, e.g. GSM specially adapted for hand-held use with built-in antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
    • H01Q21/08—Arrays of individually energised antenna units similarly polarised and spaced apart the units being spaced along or adjacent to a rectilinear path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/28—Combinations of substantially independent non-interacting antenna units or systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
    • H01Q9/045—Substantially flat resonant element parallel to ground plane, e.g. patch antenna with particular feeding means

Definitions

  • This application relates to the field of antenna decoupling technology, and in particular to an antenna device, an electronic device having the antenna device, and a decoupling method for the antenna device.
  • Antennas can efficiently transmit and receive electromagnetic waves and are an indispensable part of wireless communication systems.
  • several antennas with the same radiation characteristics can be arranged according to a certain geometric structure to form an array antenna, thereby enhancing the antenna's radiation performance and generating more flexible directions Figure to meet the needs of different scenarios.
  • An aspect of the present application provides an antenna device, including: a first antenna unit and a second antenna unit, a first decoupling network, a second decoupling network, and a decoupling transmission line arranged adjacently.
  • the first decoupling network has an input port, an output port and a decoupling port, the output port is connected to the first antenna unit, and the input port is used to connect to the first feed;
  • the second decoupling network has an input port, an output port and a decoupling port Port, the output port of the second decoupling network is connected to the second antenna unit, and the input port of the second decoupling network is used to connect to the second feed; connected to the decoupling port of the first decoupling network and the second decoupling Between the decoupling ports of the network, the first decoupling network and the decoupling transmission line-shaped success splitter are used to distribute the power input from the input port of the first decoupling network to the first antenna unit according to the power split ratio of the power splitter And decoupling transmission line.
  • an electronic device including a housing, a display screen assembly, a feed source, and an antenna device.
  • the display screen assembly is connected with the casing, and forms an accommodating space with the casing.
  • the feed source is arranged in the accommodating space.
  • At least part of the antenna device is arranged in the accommodating space.
  • the antenna device includes a plurality of antenna units arranged at intervals, a plurality of decoupling networks and decoupling transmission lines corresponding to the plurality of antenna units one-to-one.
  • each of the decoupling networks has an input port, an output port, and a decoupling port, the output port is connected to a corresponding antenna unit, and the input port is connected to the feed source.
  • the decoupling transmission line is connected between the adjacent decoupling ports, and the decoupling network and the decoupling transmission line connected to the decoupling network are successfully splitter to separate the input port of the decoupling network from The input power is distributed to the antenna unit corresponding to the decoupling network and the decoupling transmission line according to the power division ratio of the power divider.
  • the antenna device includes a feed source, a first antenna unit and a second antenna unit arranged adjacent to each other, and the antenna device is connected to the first antenna unit and the second antenna unit.
  • a first decoupling network between the feed sources, a second decoupling network connected between the second antenna unit and the feed source, and a second decoupling network connected between the first decoupling network and the second decoupling network The decoupling transmission line between the networks; the first decoupling network and the decoupling transmission line-shaped success splitter; the decoupling method includes: obtaining the initial transmission line between the first antenna unit and the second antenna unit The strength of isolation; determine the power division ratio of the power divider according to the strength of the initial isolation; and distribute the power fed into the first decoupling network to the first antenna according to the power division ratio The unit and the decoupling transmission line.
  • the initial isolation is the isolation when the first antenna unit and the second antenna unit are not connected to the first decoupling network and the second de
  • the feeder A part of the signal from the source is transmitted to the antenna unit through the first decoupling network, and the other part of the signal is transmitted to the second decoupling network through the first decoupling network and the decoupling transmission line to reach the adjacent antenna unit, thus to a certain extent It cancels the coupling between the two antenna units and improves the isolation of the multi-antenna system.
  • this application only needs to configure the decoupling transmission line length and the scattering parameter (ie, S parameter) of the decoupling network to accurately define the coupling degree between the antenna elements, that is, to reduce the mutual coupling between the antenna elements. Expand the scan angle and increase the scan gain.
  • FIG. 1 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
  • FIG. 2 is a schematic diagram of the decoupling principle of the array antenna according to an embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of an array antenna according to an embodiment of the present application.
  • FIG. 4 is a schematic flowchart of a decoupling method for an array antenna according to an embodiment of the present application
  • FIG. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application.
  • Fig. 6 is a perspective view of an antenna device according to an embodiment of the present application.
  • Fig. 7 is a bottom view of the antenna device of Fig. 6;
  • FIG. 8 is a schematic diagram of the layered structure of two antenna units of the antenna device according to an embodiment of the present application.
  • FIG. 9 is a schematic diagram of an antenna device according to another embodiment of the present application.
  • Figure 10 shows the curve of the reflection coefficient of the antenna unit before connecting the decoupling network
  • Figure 11 shows the comparison curve of the reflection coefficient of the antenna unit before and after connecting the decoupling network
  • Figure 12 shows the comparison curve of the coupling coefficient of the antenna unit before and after connecting the decoupling network
  • Figure 13 shows the comparison curve of the gain sweep of the antenna device when the beam is scanned to 0° before and after connecting the decoupling network
  • Figure 14 shows the comparison curve of the gain sweep of the antenna device when the beam is scanned to 45° before and after connecting the decoupling network
  • Fig. 15 shows the comparison curve of the gain sweep of the antenna device when the beam is scanned to 50° before and after connecting the decoupling network.
  • Array antennas especially small-pitch array antennas, have the problem of strong mutual coupling.
  • the mutual coupling between the antenna elements affects the matching characteristics and spatial radiation characteristics of the antenna elements and their arrays to a large extent, and the specific manifestations are as follows.
  • Pattern The distribution of the current on the antenna changes under the action of mutual coupling, causing part of the radiated energy to be further coupled to other antenna elements, part of the coupling energy is absorbed by the terminal load and consumed, and the other part of the energy will be Radiate again. Therefore, the antenna pattern will be distorted.
  • the termination load mentioned here is a parameter equivalent to the back end of the antenna feed; when drawing the equivalent circuit, the entire back end of the antenna feed can be replaced by a resistor, which can be called a termination load .
  • Input impedance Affected by mutual coupling, the input impedance of the antenna unit in the array will change, and is different from the input impedance of the antenna unit in an isolated environment, so the matching situation of the antenna unit in each array is different and the matching characteristics will be affected .
  • DGS-Defected Ground Structure DGS-Defected Ground Structure
  • NLT-Neutralization Line Technique neutralization line Method
  • band-stop filter decoupling method electromagnetic band gap structure
  • ECG Electromagnetic Band Gap
  • MDT Metamaterial Decoupling Technique
  • the array antenna of the electronic device can customize the coupling effect between the antennas, and realize the control of the radiation pattern of the antenna unit through the design of the coupling effect, such as widening the scanning angle and improving the scanning Gain, eliminate scanning blind spots, etc.
  • the electronic device may be a mobile phone, a tablet computer, a PDA (Personal Digital Assistant), a POS (Point of Sales, sales terminal), a car computer, a CPE (Customer Premise Equipment, customer front equipment) and other terminal devices.
  • PDA Personal Digital Assistant
  • POS Point of Sales, sales terminal
  • car computer a CPE (Customer Premise Equipment, customer front equipment) and other terminal devices.
  • CPE Customer Premise Equipment, customer front equipment
  • the mobile phone 100 may include: an RF (Radio Frequency) circuit 101, a memory 102, a central processing unit (CPU) 103, a peripheral interface 104, an audio circuit 105, a speaker 106, and power management
  • the chip 107, an input/output (I/O) subsystem 108, a touch screen 109, other input/control devices 110, and an external port 111 communicate through one or more communication buses or signal lines 112.
  • the illustrated mobile phone is only an example of an electronic device, and the mobile phone 100 may have more or fewer components than those shown in the figure, may combine two or more components, or may have Different component configurations.
  • the various components shown in the figure may be implemented in hardware, software, or a combination of hardware and software including one or more signal processing and/or application specific integrated circuits.
  • the RF circuit 101 is mainly used to establish communication between the mobile phone and the wireless network (ie, the network side), and realize the data reception and transmission between the mobile phone and the wireless network. For example, sending and receiving short messages, emails, etc. Specifically, the RF circuit 101 receives and transmits RF signals, which are also called electromagnetic signals. The RF circuit 101 converts electrical signals into electromagnetic signals or converts electromagnetic signals into electrical signals, and communicates with communication networks and other equipment through the electromagnetic signals. To communicate.
  • the RF circuit 101 may include known circuits for performing these functions, including but not limited to an antenna system with an antenna array, an RF transceiver, one or more amplifiers, a tuner, one or more oscillators, digital signal processing Device, CODEC (COder-DECoder, codec) chipset, subscriber identity module (Subscriber Identity Module, SIM), etc.
  • CODEC COder-DECoder, codec
  • SIM Subscriber Identity Module
  • the memory 102 can be accessed by the CPU 103, the peripheral interface 104, etc.
  • the memory 102 can include a high-speed random access memory, and can also include a non-volatile memory, such as one or more disk storage devices, flash memory devices, or other volatile Sexual solid-state storage devices.
  • the central processing unit 103 executes various functional applications and data processing of the electronic device by running software programs and modules stored in the memory 102.
  • the peripheral interface 104 can connect the input and output peripherals of the device to the CPU 103 and the memory 102.
  • the I/O subsystem 108 can connect the input and output peripherals on the device, such as the touch screen 109 and other input/control devices 110, to the peripheral interface 104.
  • the I/O subsystem 108 may include a display controller 1081 and one or more input controllers 1082 for controlling other input/control devices 110.
  • one or more input controllers 1082 receive electrical signals from other input/control devices 110 or send electrical signals to other input/control devices 110, and other input/control devices 110 may include physical buttons (press buttons, rocker buttons, etc.) ), dial, slide switch, joystick, click wheel.
  • the input controller 1082 can be connected to any of the following: a keyboard, an infrared port, a USB interface, and a pointing device such as a mouse.
  • the touch screen 109 is an input interface and an output interface between the user terminal and the user, and displays visual output to the user.
  • the visual output may include graphics, text, icons, videos, and the like.
  • the display controller 1081 in the I/O subsystem 108 receives electrical signals from the touch screen 109 or sends electrical signals to the touch screen 109.
  • the touch screen 109 detects the contact on the touch screen, and the display controller 1081 converts the detected contact into interaction with the user interface object displayed on the touch screen 109, that is, realizes human-computer interaction.
  • the user interface object displayed on the touch screen 109 can be running The icon of the game, the icon of connecting to the corresponding network, etc.
  • the device may also include an optical mouse, which is a touch-sensitive surface that does not display visual output, or is an extension of the touch-sensitive surface formed by a touch screen.
  • the audio circuit 105 is mainly used to receive audio data from the peripheral interface 104, convert the audio data into an electric signal, and send the electric signal to the speaker 106.
  • the speaker 106 is used to restore the voice signal received by the mobile phone 100 from the wireless network through the RF circuit 101 into sound and play the sound to the user.
  • the power management chip 107 is used to perform power supply and power management for the hardware connected to the CPU 103, the I/O subsystem 108 and the peripheral interface 104.
  • the array antenna in the antenna system of the RF circuit 101 of the electronic device.
  • the array antenna usually includes a plurality of closely-arranged antenna units, and in at least two adjacent antenna units, each antenna unit is connected to the feed through a matching network.
  • a plurality of means at least two, such as two, three, etc., unless otherwise specifically defined.
  • antenna unit 10 may be referred to as the first antenna unit 10
  • antenna unit 20 may be referred to as the second antenna unit 20.
  • the antenna unit 10 and the antenna unit 20 are adjacent to each other.
  • the radiation characteristics of the antenna unit 10 and the antenna unit 20 may be the same or different.
  • the antenna unit 10 can receive the excitation current from the feed (radio frequency transceiver) of the electronic device, and after amplifying, filtering, matching and tuning, the antenna unit 10 is excited to resonate at the corresponding frequency, thereby generating an electromagnetic wave signal of the corresponding frequency, which is the same frequency as the free space.
  • the electromagnetic wave signal coupling realizes signal transmission; the antenna unit 10 can also resonate with the antenna unit of the corresponding frequency under the excitation of the excitation signal to couple the electromagnetic wave signal of the same frequency from the free space, thereby forming an induced current on the antenna unit 10, and the induced current is filtered , After amplifying, enter the radio frequency transceiver.
  • the array antenna also includes a decoupling structure.
  • the decoupling structure includes a decoupling network and a decoupling transmission line connected to the decoupling network.
  • the decoupling networks corresponding to two adjacent antenna units 10 and 20 are connected to each other, wherein the antenna unit 10 corresponds to the first decoupling network 30, and the antenna unit 20 corresponds to the second decoupling network 30. '.
  • Both the first decoupling network 30 and the second decoupling network 30' are three-port networks.
  • the first decoupling network 30 has an input port (a 1 , b 1 ) connected to the feed, an output port (a 2 , b 2 ) connected to the antenna unit 10, and a decoupling port used to connect to the second decoupling network 30 ′ (a 3 ,b 3 ).
  • Second decoupling network 30 ' having an input port (a connector feeds' 1, b' 1), an output port connected to the antenna unit (a 20 is the '2, b' 2) and means for connecting the first decoupling network 30 Decoupling port (a' 3 ,b' 3 ).
  • a 1, a 2, a 3, a '1, a' 2 , and a '3 is the incident voltage wave amplitude
  • b 1, b 2, b 3, b' 1, b '2 and b' 3 is reflected The amplitude of the voltage wave.
  • the “input port” and “output port” in the embodiment of the present application are only named from the angle of the antenna unit 10 transmitting signals. It is understandable that the antenna unit 10 can also receive signals.
  • the aforementioned "output port” can be used as an input port
  • the aforementioned “input port” can be used as an output port, that is, the "input port” and "output port” in this application.
  • the transmission line of length d 1 in FIG. 2 forms an output port (a 2 , b 2 ), and has an impedance Z 2 .
  • a transmission line of length d 2 forming the output port (a '2, b' 2 ), and having an impedance Z 2.
  • d 1 and d 2 can be equal.
  • Decoupling of length d of the transmission line 5 is connected to a first port coupled to the decoupling network 30 (a 3, b 3) and the second decoupling network 30 'is coupled to port (a' 3, b '3 ), and an impedance Z 3 .
  • the first decoupling network 30 and the decoupling transmission line-shaped success divider are used to distribute the power input from the input ports (a 1 , b 1 ) of the first decoupling network 30 to the power divider according to the power division ratio of the power divider.
  • Second decoupling network 30 ' is coupled to the transmission line and the success splitter to decoupling from the second network 30' the input port (a '1, b' 1 ) is assigned to a second power input in accordance with the predetermined ratio
  • the antenna unit 30 and the decoupling transmission line 33 cancel the mutual coupling between the two antenna units 10 and 20.
  • the transmission line with a length of d 1 in Figure 2 also shows a transmission line with impedance Z 2 , but these two transmission lines correspond to the same wire in physical objects; similarly, the transmission line with a length of d 2 , The decoupling transmission line of length d 5 should also be understood in the same way.
  • FIG. 3 it is a schematic diagram of a decoupling structure for an array antenna according to an embodiment of the present application, in which at least a first decoupling network 30, a second decoupling network 30', and a decoupling transmission line 33 connected therebetween can be formed
  • This application is used for the decoupling structure of the array antenna.
  • the decoupling structure and the array antenna connected to it can also form the antenna device of the present application.
  • the following takes the first decoupling network 30 corresponding to the antenna unit 10 and the second decoupling network 30' corresponding to the antenna unit 20 in FIG.
  • the first decoupling network 30 is the same.
  • the first decoupling network 30 is a three-port network.
  • the three-port network includes a first transmission line 31 and a second transmission line 32.
  • one end of the first transmission line 31 and the second transmission line 32 are connected to each other, and a decoupling port is formed at the connection.
  • the other end of the first transmission line 31 forms an input port connected to the first feed source 40.
  • the other end of the second transmission line 32 forms an output port connected to the antenna unit 10.
  • One end of the decoupling transmission line 33 is connected to the decoupling port of the first decoupling network 30. It is pointed out here that one end and the other end of a certain transmission line mentioned in the text refer to the two opposite ends of the transmission line.
  • the second decoupling network 30' is the same as the above-mentioned first decoupling network 30, and also has a first transmission line 31' and a second transmission line 32'.
  • first transmission line 31' and the second transmission line 32' are connected to each other, and a decoupling port is formed at the connection.
  • the other end of the first transmission line 31' forms an input port connected to the second feed source 40'.
  • the other end of the second transmission line 32' forms an output port connected to the antenna unit 20.
  • One end of the decoupling transmission line 33' is connected to the decoupling port of the second decoupling network 30'.
  • the first feed source 40 and the second feed source 40' may be the same feed source.
  • the other end of the decoupling transmission line 33 is connected to the decoupling port of the second decoupling network 30', and the other end of the decoupling transmission line 33' is connected to the decoupling port of the first decoupling network 30.
  • the first decoupling network 30 and the second decoupling network 30' share a decoupling transmission line 33 (33'), and the first decoupling network 30 and the second decoupling network 30' The decoupling ports of the second decoupling network 30' are connected.
  • first”, “second”, and “third” in this application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first”, “second”, and “third” may explicitly or implicitly include at least one of the features.
  • the degree of coupling between the two antenna units 10 and 20 can be determined by the scattering parameters (i.e., S parameters) of the first decoupling network 30 and the second decoupling network 30' and the length of the decoupling transmission line 33.
  • S parameters the scattering parameters
  • the S parameter of the three-port network and the length of the decoupling transmission line 33 can be configured so that the distance between the antenna units 10 and 20 is The coupling degree satisfies the preset coupling degree D.
  • the first decoupling network 30 and the second decoupling network 30' adopt the same structure, their S parameters are also the same. Therefore, when the first decoupling network 30 and the second decoupling network 30' are the same, the degree of coupling between the two antenna units 10, 20 is comparable to that of the three-port network (the first decoupling network 30 or the second decoupling network 30').
  • the relationship between the S parameter of the net 30') and the length of the decoupling transmission line can be obtained in the following way:
  • the [S] matrix of the decoupling network is:
  • S 11 , S 22 , S 33 are the reflection coefficients of the three ports when the three-port network exists alone;
  • S 12 is the power directly fed from the input port to the output port;
  • S 13 is the power fed from the input port to the decoupling port Power;
  • S 23 is the power fed from the decoupling port to the output port.
  • S 11 , S 22 , S 33 and S 23 can be designed as 0, so that the S parameter matrix is:
  • k is the wave number
  • e is the natural constant
  • j is the sign of the imaginary number
  • E represents the identity matrix
  • the four ports of the four-port network here refer to the four external ports (a 1 ,b 1 ), (a 2 ,b 2 ), (a' 1 ,b' 1 ) and (a' 2 ,b' 2 ).
  • S '12 is the intensity of initial two yuan antenna isolation, i.e., two adjacent antenna elements 10 and 20 are not connected between the decoupled intensity during the isolation network;
  • the four-port network formed is connected with the two antenna units 10 and 20 to form a two-port (1, 1') network.
  • the S parameter matrix of the two-port network is:
  • the two ports of the two-port network here refer to the connection between the two three-port networks and the two antenna units 10 and 20 respectively, and the remaining two are used to connect to the feeder. Ports (a 1 ,b 1 ) and (a' 1 ,b' 1 ).
  • S '12 initial isolation of the intensity i.e., two adjacent antenna elements 30 of the first and the second decoupling network 30 is not connected between the decoupling network 10 and 20' when the strength of the isolation.
  • the length d5 of the decoupling transmission line 33 and the S parameter of the three-port network can be configured such that the coupling degree between the antenna units 10 and 20 meets the preset coupling degree.
  • the first decoupling network 30 and the decoupling transmission line 33 can form a splitter.
  • the second decoupling network 30' and the decoupling transmission line 33 can also form a splitter.
  • the coupling degree between the two antenna units 10 and 20 can be set to zero by configuring the length of the decoupling transmission line 33 and the power division ratio of the power divider.
  • the length of the decoupling transmission line 33 and the power division ratio of the power divider can be determined by the initial isolation between the two antenna units 10 and 20, where the initial isolation is when the decoupling network is not connected between the two antenna units.
  • the isolation that is, in some embodiments, the power division ratio between the two antenna elements 10 and 20 may be configured according to the initial isolation degree and the length of the decoupling transmission line 33 to zero the coupling degree between the two antenna elements 10 and 20.
  • the power division ratio of the power divider can be determined by the strength of the initial isolation between the two antenna elements (ie, S′ 12 ).
  • the length of the decoupling transmission line 33 can be determined by the phase ( ⁇ ′ 12 ) of the initial isolation between the two antenna elements 10 and 20.
  • the S parameter of the decoupling network can be determined according to the power division ratio.
  • the power division ratio of the power divider is configured to satisfy the relationship of formula (21) with the strength of the initial isolation of the two antenna units 10 and 20, and the length of the decoupling transmission line 33 is configured to be equal to two
  • the phases of the initial isolation of the two antenna units 10 and 20 satisfy the relationship of formula (21), so that the coupling degree between the two antenna units 10 and 20 can be set to zero.
  • a power divider with this power division ratio and a decoupling transmission line 33 with this length can be designed to achieve zero coupling. .
  • the power division ratio of the power divider is related to the characteristic impedance of the first transmission line 31, the second transmission line 32 and the decoupling transmission line 33. It can be seen from the above embodiment that the power division ratio of the power divider can be obtained according to the strength of the initial isolation. Therefore, the obtained power division ratio and the characteristic impedance of the first transmission line 31 can be used to determine the second transmission line 32 and the decoupling transmission line. 33 characteristic impedance. Therefore, the characteristic impedance of the second transmission line 32 and the decoupling transmission line 33 can be determined according to the characteristic impedance of the first transmission line 31 and the strength of the initial isolation.
  • the required power divider ratio of the power divider can be obtained through the preset coupling degree, and then the required characteristic impedance Z 2 of the second transmission line 32 and the decoupling transmission line 33 can be obtained according to the power division ratio.
  • the characteristic impedance Z 3 of the decoupling network is configured so that the characteristic impedance of the second transmission line 32 meets the required characteristic impedance Z 2 and the characteristic impedance of the decoupling transmission line 33 meets all requirements.
  • the required characteristic impedance Z 3 is configured so that the characteristic impedance of the second transmission line 32 meets the required characteristic impedance Z 2 and the characteristic impedance of the decoupling transmission line 33 meets all requirements.
  • the characteristic impedance of the transmission line can be configured to meet the requirements by configuring the line width of the transmission line, that is, the line width of the second transmission line 32 is determined according to the characteristic impedance of the second transmission line 32.
  • the line width of the decoupling transmission line 33 is determined according to the characteristic impedance of the decoupling transmission line 33. For example, after the characteristic impedance Z 2 of the second transmission line 32 is obtained according to the above-mentioned relational expression, the line width of the second transmission line 32 can be configured such that its characteristic impedance satisfies the above-mentioned characteristic impedance Z 2 .
  • the line width of the second transmission line 32 is configured according to the calculation result, thereby obtaining the second transmission line 32 having the above-mentioned characteristic impedance Z 2.
  • the line width of the decoupling transmission line 33 can be configured to make the decoupling transmission line 33 meet the aforementioned required characteristic impedance Z 3 .
  • the line width of the decoupling transmission line 33 can be calculated according to the relationship between the characteristic impedance and the line width and the required characteristic impedance Z 3 .
  • the configuration based on the calculation result of decoupling the transmission line 33 is the line width, thereby obtaining a Z decoupling the transmission line 3 having the above characteristic impedance of 33.
  • the power divider may also be of other types, for example, a Wilkinson power divider.
  • the second transmission line characteristic impedance Z 2 and decoupling the transmission line characteristic impedance of Z 3 may be calculated according to wilkinson power divider corresponding relationship.
  • the input impedances of the feed ports of the antenna units 10 and 20 are matched with 50 ⁇ . Therefore, the second transmission line 32 is configured as three transmission lines with a length of 1/4 ⁇ , that is, the length of the second transmission line 32 is Configured to 3/4 ⁇ to match its impedance to 50 ⁇ .
  • FIG. 7 is a schematic flowchart of a decoupling method for an antenna device according to an embodiment of the application.
  • the decoupling method may mainly include the following operations S101-S105.
  • Operation S101 Obtain the strength of the initial isolation between the first antenna unit and the second antenna unit; where the initial isolation is that the first antenna unit and the second antenna unit are not connected to the first decoupling network and the second decoupling network The degree of isolation at the time.
  • Operation S102 Determine the power division ratio of the power divider according to the strength of the initial isolation.
  • Operation S103 distribute the power fed into the first decoupling network to the first antenna unit and the decoupling transmission line according to the power division ratio.
  • the decoupling method further includes the following operations: obtaining the phase of the initial isolation; and determining the length of the decoupling transmission line according to the phase of the initial isolation.
  • the degree of coupling between the first antenna unit and the second antenna unit is determined according to the length of the decoupled transmission line and the scattering parameters of the first three-port network and the second three-port network.
  • the degree of coupling between the first antenna unit and the second antenna unit is determined according to the following relationship: Wherein, S '12 degrees of the intensity of the initial isolation between the first antenna element and second antenna elements, the initial isolation of a first antenna element and second antenna elements are not the first and second three-port three-port network connection Isolation in the network; S 12 and S 13 are the scattering parameters of the first three-port network; d 5 is the length of the decoupling transmission line; k is the wave number, e is the natural constant, and j is the sign of the imaginary number.
  • the length of the decoupling transmission line is set according to the phase of the initial isolation of the first antenna unit and the second antenna unit.
  • the power division ratio of the power divider and the length of the decoupling transmission line are determined according to the aforementioned relationship (21).
  • the characteristic impedance of the second transmission line and the decoupled transmission line are determined according to the characteristic impedance of the first transmission line and the strength of the initial isolation.
  • the characteristic impedance of the second transmission line is determined according to the aforementioned relationship (23).
  • the characteristic impedance of the decoupled transmission line is determined according to the aforementioned relationship (24).
  • the line widths of the second transmission line and the decoupled transmission line are calculated based on the characteristic impedance of the second transmission line and the characteristic impedance of the decoupled transmission line.
  • the length of the decoupling transmission line is determined according to the aforementioned relationship (22).
  • the electronic device of the present application may be a mobile phone 100a as shown in FIG. Wherein, an accommodating space is formed between the housing 41 and the display screen assembly 50. Other electronic components of the mobile phone, such as the main board, battery, and antenna device 60, are all arranged in the accommodating space.
  • the housing 41 may be made of plastic, glass, ceramic, fiber composite material, metal (for example, stainless steel, aluminum, etc.), or other suitable materials.
  • the housing 41 shown in FIG. 5 is substantially rectangular with rounded corners.
  • the housing 41 can also have other shapes, such as a circular shape, an oblong shape, an oval shape, and so on.
  • the display assembly 50 includes a display cover 51 and a display module 52.
  • the display module 52 is attached to the inner surface of the display cover 51.
  • the housing 41 is connected to the display cover 51 of the display assembly 50.
  • the display cover 51 may be made of glass;
  • the display module 52 may be an OLED flexible display structure, which may specifically include a substrate, a display panel (Panel), and auxiliary material layers, etc., in addition, the display module 52 and the display cover Structures such as a polarizing film can also be sandwiched between 51, and the detailed laminated structure of the display module 52 is not limited here.
  • the antenna device 60 may be completely contained in the housing 41, or may be embedded in the housing 41, and a part of the antenna device 60 may be exposed on the outer surface of the housing 41.
  • the antenna device 60 may include a plurality of antenna units arranged at intervals, a plurality of decoupling networks, and a decoupling transmission line.
  • the multiple decoupling networks correspond to the multiple antenna units one-to-one, and the decoupling transmission lines are connected between adjacent decoupling networks.
  • the decoupling network may be the decoupling network of any of the above embodiments.
  • the multiple antenna elements of the antenna device 60 may be a four-element linear array as shown in FIGS. 6 and 7, that is, having four antenna elements 10a, 20a, 10b, and 20b arranged in a straight line.
  • the antenna device 60 includes a first substrate 61, a second substrate 62, a third substrate 63, and a radio frequency chip 64 which are sequentially stacked in layers, and a plurality of antenna units formed on the first substrate 61 ( FIG. 8 only shows two antenna elements 10a, 20a), and a plurality of metal layers 661-668 (among them, the metal layer 665 is the ground layer 665) formed on the first substrate 61 and the third substrate 63, pass through the first substrate 61 and the third substrate 63.
  • the multiple feeders in the third substrate 63 and the second substrate 62 and the multiple decoupling networks (for example, the first decoupling network 30 and the second decoupling network 30') arranged in the third substrate 63 and connected to them Decoupling transmission line 33a between.
  • multiple feeders, multiple decoupling networks, and multiple antenna units are in one-to-one correspondence.
  • the antenna unit 10a, the first decoupling network 30 and the corresponding feeder are introduced.
  • the feeder is used to connect the corresponding antenna unit 10 a, the decoupling network 30 and the radio frequency chip 64.
  • the decoupling transmission line 33a is used to connect the first decoupling network 30 and the second decoupling network 30' corresponding to the adjacent antenna units 10a and 20a together to cancel the coupling between the antenna units 10a and 20a. It can be grounded properly, and the antenna device 60 may also include other signal transmission lines.
  • the antenna units 10a, 20a are used to send and receive radio frequency signals. As shown in Fig. 8, the two antenna units 10a, 20a are spaced apart from each other.
  • the antenna units 10a, 20a are double-layer patch antennas, including surface radiating plates 11a, 21a and inner radiating plates 12a, 22a that are isolated from each other and correspond to each other one-to-one.
  • the first substrate 61 includes a first outer surface 611 and a first inner surface 612 that are oppositely disposed.
  • the surface layer radiating sheets 11 a and 21 a are arranged on the first outer surface 611, and the inner layer radiating sheets 12 a and 22 a are arranged on the first inner surface 612.
  • the inner radiating fins 12a, 22a and the surface radiating fins 11a, 21a are isolated by the first substrate 61, so that the surface radiating fins 11a, 21a and the inner radiating fins 12a, 22a are separated by a certain distance, so as to meet the performance of the antenna frequency band Require.
  • the vertical projections of the surface radiating sheets 11a, 21a and the inner radiating sheets 12a, 22a on the first substrate 61 at least partially overlap.
  • the first substrate 61 may be made of thermosetting resin such as epoxy resin, thermoplastic resin such as polyimide resin, reinforcing material including glass fiber (or glass cloth, or glass fabric) and/or inorganic filler, and thermosetting resin and thermoplastic resin.
  • Resin insulating materials for example, prepreg, ABF (Ajinomoto Build-up Film), photosensitive dielectric (PID), etc.
  • the material of the first substrate 61 is not limited to this. That is, a glass plate or a ceramic plate can also be used as the material of the first substrate 61.
  • liquid crystal polymer (LCP) with low dielectric loss can also be used as the material of the first substrate 61 to reduce signal loss.
  • the first substrate 61 may be a prepreg. As shown in FIG. 8, the first substrate 61 includes three stacked prepregs. Among the three-layer prepregs of the first substrate 61, metal layers 662 and 663 are respectively provided between adjacent prepregs. The first outer surface of the first substrate 61 is further provided with a metal layer 661, and the metal layer 661 is located on the same layer as the surface radiation sheets 11a, 21a and insulated from each other. The first inner surface 612 of the first substrate 61 is provided with a metal layer 664, and the metal layer 664 is located on the same layer as the inner radiating sheets 12a, 22a and insulated from each other.
  • the metal layers 661, 662, 663, and 664 may be made of conductive materials such as metallic copper, aluminum, silver, tin, gold, nickel, lead, titanium, or their alloys. In this embodiment, the metal layers 661, 662, 663, and 664 are all copper layers.
  • the arrangement of the metal layer 661 reduces the difference between the copper spreading rate of the first outer surface 611 of the first substrate 61 and the copper spreading rate of other prepreg surfaces of the first substrate 61. During the manufacturing process of the first substrate 61, the copper spreading rate The reduction of the difference can reduce the generation of bubbles, thereby improving the manufacturing yield of the first substrate 61.
  • the arrangement of the metal layer 664 also reduces the difference between the copper spreading rate of the first inner surface 612 of the first substrate 61 and the copper spreading rate of other prepreg surfaces of the first substrate 61, so as to reduce the manufacturing process of the first substrate 61. The air bubbles are generated, thereby improving the manufacturing yield of the first substrate 61.
  • the first substrate 61 is also provided with grounding vias 613 penetrating through the first inner surface 612 and the first outer surface 611 to connect different metal layers 661, 662, 663 and 664 to each other and further to the ground layer 665.
  • the conductive material may be completely filled in the ground via 613, or the conductive material may be formed along the wall of the ground via 613 to form a conductive layer.
  • the conductive material may be copper, aluminum, silver, tin, gold, nickel, lead, titanium, or their alloys.
  • the ground via 613 may have a cylindrical shape, an hourglass shape, a cone shape, or the like.
  • the second substrate 62 includes a first side surface 621 and a second side surface 622, wherein the first side surface 621 is stacked on the first inner surface 612 of the first substrate 61.
  • the second substrate 62 may be the core layer of a PCB board, and is made of materials such as polyimide, polyethylene terephthalate, and polyethylene naphthalate.
  • the second substrate 62 is provided with a ground via 623 and a feeder via 624 penetrating through the first side surface 621 and the second side surface 622.
  • the ground layer 665 is sandwiched between the second substrate 62 and the third substrate 63.
  • the ground layer 665 is provided with a feeder via 665a.
  • the third substrate 63 includes a second outer surface 631 and a second inner surface 632 opposite to each other.
  • the second inner surface 632 of the third substrate 63 is stacked on the second side surface 622 of the second substrate 62, and the ground layer 665 is sandwiched between the second side surface 622 and the second inner surface 632.
  • the formation material of the third substrate 63 may be the same as the material of the first substrate 61.
  • the third substrate 63 may be a prepreg and has a multilayer structure. As shown in FIG. 8, the third substrate 63 includes a three-layer prepreg. Among the three-layer prepregs of the third substrate 63, metal layers 666 and 667 are provided between adjacent prepregs, which serve as feeder network and control line wiring layers, respectively. A metal layer 668 is provided on the second outer surface 631 of the third substrate 63, and the metal layer 668 and the radio frequency chip 64 are welded together.
  • the metal layers 666, 667, and 668 may be made of conductive materials such as metallic copper, aluminum, silver, tin, gold, nickel, lead, titanium, or their alloys. In this embodiment, the metal layers 666, 667, and 668 are all copper layers.
  • the third substrate 63 is provided with wiring vias.
  • the wiring via includes a ground via 633 to connect the different metal layers 666, 667, and 668 to each other and further to the ground layer 665.
  • the wiring vias also include a feeder via 634 for the feeder to pass through, and a signal via 635 for the control line to pass through. Similar to the ground via 613 on the first substrate 61, the wiring via on the third substrate 63 can be completely filled with conductive material, or a conductive layer can be formed on the wall of the hole.
  • the shape of the various wiring vias can be cylindrical, hourglass, or cone-shaped.
  • the radio frequency chip 64 is disposed on the side of the third substrate 63 away from the first substrate 61, which is equivalent to the feed sources of the foregoing embodiment, such as the first feed source 40 and the second feed source 40'.
  • the multiple feed sources can be the same or different.
  • the feeder line includes a first feeder line 65 and a second feeder line 67.
  • the decoupling networks 30, 30' are respectively connected between the corresponding first feeder 65 and the second feeder 67.
  • One end of the first feeder 65 is arranged on a side of the third substrate 63 away from the second substrate 62 to connect to the radio frequency chip 64, and the other end extends into the third substrate 63, that is, passes through the feeder via 634 of the third substrate 63.
  • a part of the second feeder 67 is disposed in the third substrate 67 to connect to the decoupling network 30, and the other part penetrates the second substrate, that is, passes through the feeder via 624 of the second substrate 62 to connect the corresponding antenna unit 10a.
  • the radio frequency chip 64, the first feeder line 65, the decoupling network 30, the second feeder line 67, and the antenna unit 10 are connected in sequence to realize signal transmission between the antenna unit 10 and the radio frequency chip 64.
  • the feeder is insulated from each metal layer, such as the metal layers 666, 667, 668 and the ground layer 665 in this embodiment.
  • signal transmission lines are provided on the third substrate 63, such as a control line 68 and a power line 69.
  • the power cord 69 is disposed on the second outer surface 631 of the third substrate 63 and soldered on the radio frequency chip 64.
  • the control line 68 is arranged between the prepreg of the third substrate 63 close to the radio frequency chip 64 and the adjacent prepreg, and passes through the signal via 635 on the prepreg to connect to the radio frequency chip 64.
  • the third substrate 63 is also used to carry multiple decoupling networks and decoupling transmission lines 33a, and the decoupling network may be the decoupling network of any of the foregoing embodiments.
  • the first decoupling network 30 may include a first transmission line 31a and a second transmission line 32a.
  • One end of the first transmission line 31a is used to connect the radio frequency chip 64, and the other end is connected to one end of the second transmission line 32a, and a decoupling port is formed at the connection.
  • the other end of the second transmission line 32a is connected to the corresponding antenna unit 10a.
  • the first transmission line 31a is connected to the radio frequency chip 64 through the first feeder line 65.
  • the second transmission line 32a is connected to the antenna unit 10a through a second feeder line 67.
  • the second decoupling network 30' may include a first transmission line 31a' and a second transmission line 32a'.
  • One end of the first transmission line 31a' is used to connect the radio frequency chip 64, and the other end is connected to one end of the second transmission line 32a', and a decoupling port is formed at the connection.
  • the other end of the second transmission line 32a' is connected to the corresponding antenna unit 20a.
  • the first transmission line 31a' is connected to the radio frequency chip 64 through a corresponding first feeder line.
  • the two transmission lines 32a are connected to the antenna unit 20a through a corresponding second feeder line.
  • the decoupling transmission line 33a connects between the first decoupling network 30 and the second decoupling network 30'. Specifically, one end of the decoupling transmission line 33a is connected to the connection of the first transmission line 31a and the second transmission line 32a corresponding to one antenna unit 10a, and the other end of the decoupling transmission line 33a is connected to the first transmission line corresponding to the adjacent antenna unit 20a. The junction of the transmission line 31a' and the second transmission line 32a'.
  • the first transmission line 31a, the second transmission line 32a, and the decoupling transmission line 33a form a power divider.
  • the signal sent from the radio frequency chip 64 is input to the first transmission line 31a through the first feeder 65, part of it is transmitted to the inner radiating sheet 12a of the antenna unit through the second transmission line 32a through the second feeder 67, and the other part is decoupled
  • the transmission line 33a transmits to the adjacent antenna unit 20a, thereby canceling the coupling between the two antenna units 10a, 20a.
  • the degree of coupling between the two antenna elements 10a, 20a can be defined by the scattering parameters of the decoupling network and the length of the decoupling transmission line 33a.
  • the length d5 of the decoupling transmission line 33a of the decoupling network of the antenna device 60 in this embodiment satisfy the following relationship:
  • the length of the decoupling transmission line 33a in the decoupling network and the power division ratio of the power divider are configured to zero the coupling degree between the two antenna units 10a, 20a.
  • the length of the decoupling transmission line 33a and the power division ratio of the power divider are configured according to the initial isolation between the two antenna units 10a, 20a.
  • the power division ratio of the power divider is configured according to the strength of the initial isolation
  • the length of the decoupling transmission line 33a is configured according to the phase of the initial isolation.
  • the relationship between the power division ratio of the power divider and the strength of the initial isolation, and the relationship between the length of the decoupling transmission line 33a and the phase of the initial isolation satisfy the aforementioned relational expressions (21) and (22).
  • the power division ratio of the power divider can be specifically realized by configuring the characteristic impedance of the second transmission line 32a and the decoupling transmission line 33a.
  • the characteristics of the transmission line 32a of the second characteristic impedance Z 2 and the first transmission line 31a is Z 1 impedance ratio splitters (isolation initial intensity S '12) satisfies the above relation (23) as well.
  • the characteristic impedance Z 3 of the decoupling transmission line 33 a and the characteristic impedance Z 1 of the first transmission line 31 a and the power division ratio (ie, the strength of the initial isolation S′ 12 ) satisfy the above-mentioned relationship (24).
  • the characteristic impedance of the transmission line can be configured to meet the requirements by configuring the line width of the transmission line.
  • the line width of the second transmission line 32a is configured such that the second transmission line 32a satisfies the aforementioned required characteristic impedance Z 2 .
  • the line width of the decoupling transmission line 33a is configured such that the decoupling transmission line 33a satisfies the aforementioned required characteristic impedance Z 3 .
  • the first decoupling network 30 and the decoupling transmission line 33 may be arranged on a layer of the third substrate 63, for example, the third substrate 63 is on the prepreg near the radio frequency chip 64 or on the prepreg in the middle.
  • the first decoupling network 30 and the decoupling transmission line 33 shown in FIG. 8 are arranged on the prepreg with the third substrate 63 in the middle, that is, the same layer as the metal layer 666.
  • the first transmission line 31a and the second transmission line 32a of the first decoupling network 30, and the decoupling transmission line 33 are all extended and patterned on this layer.
  • the length may be formed on the layer where the metal layer 666 satisfies the desired decoupling length d of the transmission line 33a 5.
  • decoupling the transmission line pattern 33a may be formed bent to meet the desired length (see Figure 7). In some other embodiments, the decoupling transmission line 33a may also be in a curved pattern.
  • the first decoupling network 30 and the second decoupling network 30' of the present application are located on different layers from the surface radiating sheets 11a, 21a and the inner radiating sheets 12a, 22a. As shown in FIG. 8, the decoupling transmission line 33 a is disposed under the antenna units 10 a and 20 a, for example, in the third substrate 63.
  • the first decoupling network 30 and the second decoupling network 30' and the decoupling transmission line 33 connected between them may also be the same layer as the metal layer 667 or 668.
  • the decoupling transmission line 33a can also be distributed in different layers, for example, a part of the decoupling transmission line 33a is distributed in the layer where the metal layer 666 is located, and the other part is distributed in the layer where the metal layer 667 is located through via holes; or, a part of the decoupling transmission line 33a It is distributed in the layer where the metal layer 666 is located, one part is distributed in the layer where the metal layer 667 is located through the via hole, and the other part is distributed in the layer where the metal layer 668 is located through the via hole.
  • the characteristic impedance of the decoupling transmission line 33a may gradually change. Specifically, from both ends of the decoupling transmission line 33a to the middle position, the characteristic impedance of the decoupling transmission line 33a gradually changes.
  • the change of the characteristic impedance of the transmission line can be realized by the change of the line width of the transmission line.
  • the line width of the decoupling transmission line 33a gradually changes from the two ends of the decoupling transmission line 33a to the middle position.
  • the line width of the decoupling transmission line 33a changes step by step from the two ends of the decoupling transmission line 33a to the middle position. For example, the decoupling transmission line 33a shown in FIG.
  • the 7 includes a first section 331a, a second section 332a, a third section 333a, a fourth section 334a, and a fifth section 335a that are sequentially connected, wherein the width of each section can be uniform. of.
  • the width of the first segment 331a and the fifth segment 335a are the same.
  • the second section 332a and the fourth section 334a have the same width.
  • the width of the first section 331a is smaller than the width of the second section 332a, and the width of the second section 332a is smaller than the width of the third section 333a.
  • the width of the fifth section 335a is smaller than the width of the fourth section 334a, and the width of the fourth section 334a is smaller than the width of the third section 333a.
  • the characteristic impedance changes step by step until the characteristic of the third segment 333a
  • the impedance reaches 50 ⁇ .
  • the characteristic impedance of the first section 331a and the fifth section 335a can be calculated according to the power division ratio of the power divider, as shown in the above relation (24), the width can be calculated from the characteristic impedance; the characteristic of the third section 333a The impedance is 50 ⁇ , and its width can also be calculated from the characteristic impedance; the characteristic impedance of the second section 332a and the fourth section 334a can be equal to the square root of the product of the characteristic impedance of the first section 331a and the third section 333a.
  • the width can be calculated based on the calculated characteristic impedance.
  • the width of the decoupling transmission line 33a can also be changed in 4 or more stages. It is understandable that the width of the decoupling transmission line 33a can be continuously changed.
  • a stub 336a (as shown in FIG. 7) may be provided on the decoupling transmission line 33a, and the stub 336a is provided in the third section 333a to adjust the transmission characteristics of the decoupling network.
  • the length of the second transmission line 32a may be 3/4 ⁇ .
  • the second transmission line 32a forms a pattern that is bent or bent in a direction away from the decoupling transmission line 33 on the layer where the decoupling transmission line 33 is located.
  • the two antenna units 10a and 20a, the first decoupling network 30 and the second decoupling network 30', and the decoupling transmission line 3 have been introduced above.
  • the decoupling structure of the present application can also be provided for the antenna units 20a and 10b, or the decoupling structure of the present application can also be provided for the antenna units 10b and 20b (as shown in FIG. 7).
  • a third decoupling network 35 and a fourth decoupling network 35' and a decoupling transmission line 33a connected between the third decoupling network 35 and the fourth decoupling network 35' can be provided for the antenna units 10b and 20a. '.
  • the third decoupling network 35 may be the same as or similar to the aforementioned first decoupling network 30, and the fourth decoupling network 35' may be the same or similar to the aforementioned second decoupling network 30'.
  • the third decoupling transmission line 33a' may be the same as or similar to the aforementioned decoupling transmission line 33a.
  • these decoupling networks and decoupling transmission lines can also be distributed in different layers.
  • the first decoupling network 30 and the second decoupling network 30' and the decoupling transmission line 33a connected between them can be distributed on the metal layer 666 shown in FIG.
  • the four decoupling network 35' and the decoupling transmission line 33a' connected between the third decoupling network 35 and the fourth decoupling network 35' may be distributed on the layer where the metal layer 667 shown in FIG. 8 is located.
  • FIG. 9 is a schematic diagram of an antenna device according to another embodiment of the present application.
  • the top portion of the middle frame 42 of the mobile phone can be divided into two sections by the slot 44, and the two sections can be used as the first antenna 10a and the second antenna 20a, respectively.
  • the middle frame 42 may be provided with a circuit board 43 on which the first decoupling network 30 and the second decoupling network 30' and the decoupling transmission line 33 (see FIG. 3) described in the present application may be arranged.
  • the first feed source 40 and the second feed source 40' can be connected to the circuit board 43, which in turn is connected to the first antenna 10a and the second antenna 20a.
  • the slit 44 can usually be arranged non-centrally, for example, arranged close to the left side or the right side of the middle frame 42.
  • the decoupling design of the four-element linear array as shown in FIG. 6 and FIG. 7 is taken as an example, and the center operating frequency of the four-element linear array is 28 GHz. It is pointed out here that according to the 3GPP TS 38.101 protocol, the frequency between 24.25 GHz and 52.6 GHz is usually called millimeter wave (mm Wave); therefore, the decoupling structure proposed in this application can be a millimeter wave array antenna Decoupling structure.
  • the reflection coefficient of the four-element linear array is shown in Figure 10.
  • Figure 11 shows the reflection coefficient comparison curve of the antenna unit before and after connecting the decoupling network.
  • the -10dB working bandwidth of the unit in the decoupling front array is 26.68GHz-29.78GHz, and the -6dB working bandwidth is 25.57GHz-29.94GHz; after decoupling, the -6dB working bandwidth is 24.03GHz- 29.85GHz, the working bandwidth is expanded, which significantly improves the matching characteristics of the antenna.
  • Figure 12 shows a comparison curve of the coupling coefficients of the antenna units before and after the decoupling network is connected. It can be seen from Fig. 10 that in the frequency band of 25.7GHz ⁇ 28.4GHz, the coupling coefficient is lower than before, realizing broadband mutual coupling suppression; at the frequency of 27GHz, affected by the coupling effect, the coupling coefficient between the units before decoupling is ⁇ 10.2dB, after decoupling, the coupling coefficient of the antenna is reduced by 11dB, effectively suppressing the coupling effect between the units.
  • Figures 13-15 are the comparison curves of the gain sweep frequency of the antenna device when the beam is scanned to 0°, 45° and 50° before and after the decoupling network is connected. It can be seen from Figure 13 that when the beam is pointed at 0°, in the frequency range of 23.8GHz-25.5GHz, the gain after decoupling is improved compared with that before decoupling. The maximum gain increase at 24.4GHz is 0.68dB, and at 25.5GHz-GHz frequency Within the range, the gain before and after decoupling is basically the same. As shown in Figure 14, when the beam is pointed at 45°, in the frequency range of 23GHz-27.6GHz, the gain after decoupling is improved compared with that before decoupling, and the maximum gain increase at 24.7GHz is 2.27dB.
  • the antenna device of the present application introduces the concept of a decoupling network under the antenna unit, without changing the structure of the array antenna unit, only the length of the decoupling transmission line 33a and the S parameters of the decoupling network are configured, namely
  • the degree of coupling between the antenna units 10 and 20 can be precisely defined, that is, the mutual coupling between the antenna units can be reduced, the scanning angle can be expanded, and the scanning gain can be improved.
  • the power division ratio of the power divider can be calculated according to the strength of the isolation before decoupling, and then the characteristic impedance of each transmission line in the power divider can be determined according to the formula, and then the width of the transmission line corresponding to the characteristic impedance can be calculated for production Power divider. Based on this method, the isolation of the multi-antenna system can be improved.

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Abstract

一种天线装置、电子设备及用于天线装置的去耦方法，天线装置包括相邻设置的第一天线单元和第二天线单元、第一去耦网络、第二去耦网络和去耦传输线。第一去耦网络具有输入端口、输出端口和去耦合端口，输出端口与第一天线单元连接，输入端口用于与第一馈源连接；第二去耦网络具有输入端口、输出端口和去耦合端口，第二去耦网络的输出端口与第二天线单元连接，第二去耦网络的输入端口用于与第二馈源连接；去耦传输线连接在第一去耦网络的去耦合端口和第二去耦网络的去耦合端口之间，第一去耦网络和去耦传输线形成功分器，以将从第一去耦网络的输入端口输入的功率按功分器的功分比分配至第一天线单元和去耦传输线。

Description

天线装置、电子设备及用于天线装置的去耦方法 【技术领域】
本申请涉及天线去耦技术领域，具体涉及一种天线装置、具有该天线装置的电子设备、以及用于天线装置的去耦方法。
【背景技术】
天线可以高效地发射与接收电磁波，是无线通信系统中不可或缺的重要组成部分。然而，随着科学技术的进步，单个天线难以满足日益增高的性能需求。为了改善单个天线单元的方向性较差和辐射增益较低等问题，可将若干个辐射特性相同的天线按照一定的几何结构排列起来组成阵列天线，从而增强天线的辐射性能，产生较为灵活的方向图，以满足不同场景的需求。
【发明内容】
本申请的一方面提供一种天线装置，包括：相邻设置的第一天线单元和第二天线单元、第一去耦网络、第二去耦网络和去耦传输线。第一去耦网络具有输入端口、输出端口和去耦合端口，输出端口与第一天线单元连接，输入端口用于与第一馈源连接；第二去耦网络具有输入端口、输出端口和去耦合端口，第二去耦网络的输出端口与第二天线单元连接，第二去耦网络的输入端口用于与第二馈源连接；连接在第一去耦网络的去耦合端口和第二去耦网络的去耦合端口之间，第一去耦网络和去耦传输线形成功分器，以将从第一去耦网络的输入端口输入的功率按功分器的功分比分配至第一天线单元和去耦传输线。
本申请的另一方面提供一种电子设备，包括壳体、显示屏组件、馈源和天线装置。其中，显示屏组件与壳体连接，并与壳体形成容置空间。馈源设置在所述容置空间内。天线装置的至少部分设置在所述容置空间内。天线装置包括多个间隔设置的天线单元、与所述多个天线单元一一对应的多个去耦网络和去耦传输线。其中，每个所述去耦网络均具有输入端口、输出端口和去耦合端口，所述输出端口与对应的天线单元连接，所述输入端口与所述馈源连接。去耦传输线，连接在相邻的所述去耦合端口之间，所述去耦网络和连接在该去耦网络上的去耦传输线形成功分器，以将从所述去耦网络的输入端口输入的功率按所述功分器的功分比分配至所述去耦网络对应的天线单元和所述去耦传输线。
本申请的又一方面提供一种用于天线装置的去耦方法，该天线装置包括馈源、相邻设置的第一天线单元和第二天线单元、连接在所述第一天线单元和所述馈源之间的第一去耦网络，连接在所述第二天线单元和所述馈源之间的第二去耦网络，以及连接在所述第一去耦网络和所述第二去耦网络之间的去耦传输线；所述第一去耦网络与所述去耦传输线形成功分器；该去耦方法包括：获取所述第一天线单元和所述第二天线单元之间的初始隔离度的强度；根据所述初始隔离度的强度确定所述功分器的功分比；以及将馈入所述第一去耦网络的功率按所述功分比分配至所述第一天线单元和所述去耦传输线。其中，所述初始隔离度为所述第一天线单元和所述第二天线单元未连接所述第一去耦网络和所述第二去耦网络时的隔离度。
本申请由于在两个相邻的天线单元之间设置了第一去耦网络和第二去耦网络，并且在第一去耦网络和第二去耦网络之间连接去耦传输线，因此从馈源发出的信号的一部分经第一去耦网络传输至天线单元，另一部分信号经第一去耦网络以及去耦传输线传输至第二去耦网络以到达相邻的天线单元，从而在一定程度上抵消两个天线单元之间的耦合、提高多天线系统的隔离度。进一步地，本申请只需对去耦传输线长度以及去耦网络的散射参数(即，S参数)进行配置，即可精确定义天线单元之间的耦合度，即能降低天线单元间的互耦，拓展扫描角，提升扫描增益。
【附图说明】
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图，其中：
图1是本申请实施例的一种电子设备的结构示意图；
图2是本申请实施例的阵列天线的去耦原理示意图；
图3是本申请实施例的阵列天线的结构示意图；
图4是本申请实施例的用于阵列天线的去耦方法的流程示意图；
图5是本申请实施例的一种电子设备的结构示意图；
图6是本申请实施例的天线装置的立体视图；
图7是图6的天线装置的仰视图；
图8是本申请实施例的天线装置的两个天线单元的层状结构示意图；
图9是本申请另一实施例的天线装置的示意图；
图10示出了连接去耦网络前，天线单元的反射系数的曲线；
图11示出了连接去耦网络前后，天线单元的反射系数的比对曲线；
图12示出了连接去耦网络前后，天线单元的耦合系数的比对曲线；
图13示出了连接去耦网络前后，波束扫描至0°时天线装置的增益扫频的比对曲线；
图14示出了连接去耦网络前后，波束扫描至45°时天线装置的增益扫频的比对曲线；以及
图15示出了连接去耦网络前后，波束扫描至50°时天线装置的增益扫频的比对曲线。
【具体实施方式】
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本文中提及“实施例”意味着，结合实施例描述的特定特征、结构或特性可以包含在本申请的至少一个实施例中。在说明书中的各个位置出现该短语并不一定均是指相同的实施例，也不是与其他实施例互斥的独立的或备选的实施例。本领域技术人员显式地和隐式地理解的是，本文所描述的实施例可以与其他实施例相结合。
阵列天线，尤其是小间距阵列天线，存在着互耦较强的问题。天线单元间的互耦在很大程度上影响天线单元及其阵列的匹配特性和空间辐射特性，具体表现为以下几点。
(1)方向图：天线上的电流在互耦作用下其分布发生了改变，导致部分辐射能量进一步耦合到其他天线单元，其中一部分耦合能量被端接负载吸收而消耗，而另一部分能量又会再次辐射。所以，天线的方向图会发生畸变。此处所述的端接负载是天线馈源后端等效出来的一个参数；在画等效电路时，可将天线馈源的整个后端用一个电阻来代替，并可称为端接负载。
(2)输入阻抗：受到互耦影响，阵列中天线单元的输入阻抗会发生改变，并与孤立环境中天线单元的输入阻抗不同，因此各阵列中天线单元的匹配情况不同并且匹配特性会受到影响。
(3)增益：在天线单元中存在热损耗以及阻抗不匹配引起的反射损耗等，从而使得天线的辐射功率比发射功率要小，反射系数在互耦的作用下会发生变化，故天线的增益受到影响。
在相关技术中，解决互耦效应对天线单元的方向图、输入阻抗、增益等特性的影响方面，通常采用以下五种方法：缺陷地结构(DGS-Defected Ground Structure)去耦法、中和线法(NLT-Neutralization Line Technique)去耦法、带阻滤波去耦法、电磁带隙结构(EBG,Electromagnetic Band Gap)去耦法、超材料去耦法(MDT,Metamaterial Decoupling Technique)。
然而，上述方法都是针对天线单元间耦合消除方法的研究，未能对天线间耦合效应进行精确定义与控制。
本申请提供了一种电子设备，该电子设备的阵列天线可以对天线间的耦合效应进行自定义，并通过耦合效应的设计实现对天线单元的辐射方向图的控制，例如拓宽扫描角、提升扫描增益、消除扫描盲区等。
该电子设备可以是手机、平板电脑、PDA(Personal Digital Assistant，个人数字助理)、POS(Point of Sales，销售终端)、车载电脑、CPE(Customer Premise Equipment，客户前置设备)等终端设备。以下以手机作为示例对本申请进行介绍。
如图1所示，手机100可以包括：RF(Radio Frequency，射频)电路101、存储器102、中央处理器(Central Processing Unit，CPU)103、外设接口104、音频电路105、扬声器106、电源管理芯片107、输入/输出(I/O)子系统108、触摸屏109、其他输入/控制设备110以及外部端口111，这些部件通过一个或多个通信总线或信号线112来通信。
应该理解的是，图示手机仅仅是电子设备的一个范例，并且手机100可以具有比图中所示出的更多的或者更少的部件，可以组合两个或更多的部件，或者可以具有不同的部件配置。图中所示出的各种部件可以在包括一个或多个信号处理和/或专用集成电路在内的硬件、软件、或硬件和软件的组合中实现。
下面结合图1对手机的各个构成部件进行具体的介绍：
RF电路101主要用于建立手机与无线网络(即网络侧)的通信，实现手机与无线网络的数据接收和发送。例如收发短信息、电子邮件等。具体地，RF电路101接收并发送RF信号，RF信号也称为电磁信号，RF电路101将电信号转换为电磁信号或将电磁信号转换为电信号，并且通过该电磁信号与通信网络以及其他设备进行通信。RF电路101可以包括用于执行这些功能的已知电路，其包括但不限于具有天线阵列的天线系统、RF收发机、一个或多个放大器、调谐器、一个或多个振荡器、数字信号处理器、CODEC(COder-DECoder，编译码器)芯片组、用户标识模块(Subscriber Identity Module，SIM)等等。
存储器102可以被CPU103、外设接口104等访问，所述存储器102可以包括高速随机存取存储器，还可以包括非易失性存储器，例如一个或多个磁盘存储器件、闪存器件、或其他易失性固态存储器件。
中央处理器103通过运行存储在存储器102的软件程序以及模块，从而执行电子设备的各种功能应用 以及数据处理。
外设接口104可以将设备的输入和输出外设连接到CPU103和存储器102。
I/O子系统108可以将设备上的输入输出外设，例如触摸屏109和其他输入/控制设备110，连接到外设接口104。I/O子系统108可以包括显示控制器1081和用于控制其他输入/控制设备110的一个或多个输入控制器1082。其中，一个或多个输入控制器1082从其他输入/控制设备110接收电信号或者向其他输入/控制设备110发送电信号，其他输入/控制设备110可以包括物理按钮(按压按钮、摇臂按钮等)、拨号盘、滑动开关、操纵杆、点击滚轮。值得说明的是，输入控制器1082可以与以下任一个连接：键盘、红外端口、USB接口以及诸如鼠标的指示设备。
触摸屏109是用户终端与用户之间的输入接口和输出接口，将可视输出显示给用户，可视输出可以包括图形、文本、图标、视频等。
I/O子系统108中的显示控制器1081从触摸屏109接收电信号或者向触摸屏109发送电信号。触摸屏109检测触摸屏上的接触，显示控制器1081将检测到的接触转换为与显示在触摸屏109上的用户界面对象的交互，即实现人机交互，显示在触摸屏109上的用户界面对象可以是运行游戏的图标、联网到相应网络的图标等。值得说明的是，设备还可以包括光鼠，光鼠是不显示可视输出的触摸敏感表面，或者是由触摸屏形成的触摸敏感表面的延伸。
音频电路105主要用于从外设接口104接收音频数据，将该音频数据转换为电信号，并且将该电信号发送给扬声器106。
扬声器106用于将手机100通过RF电路101从无线网络接收的语音信号，还原为声音并向用户播放该声音。
电源管理芯片107用于为CPU103、I/O子系统108及外设接口104所连接的硬件进行供电及电源管理。
以下针对该电子设备的RF电路101的天线系统中的阵列天线进行介绍。该阵列天线通常包括多个紧密布置的天线单元，在至少两个相邻的天线单元中，每个天线单元与馈源之间均通过匹配网络连接。本申请的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
本实施例以两个相邻的天线单元10和20作为示例来对本申请进行介绍，其中，天线单元10可称为第一天线单元10，天线单元20可称为第二天线单元20。如图2所示，天线单元10和天线单元20相邻。天线单元10和天线单元20的辐射特性可以相同也可以不同。天线单元10可以从电子设备的馈源(射频收发器)接收激励电流，经放大、滤波、匹配调谐后激励天线单元10谐振于对应频率，从而产生对应频率的电磁波信号，与自由空间相同频率的电磁波信号耦合实现信号发射；天线单元10还可以在激励信号的激励下谐振于对应频率的天线单元耦合来自自由空间相同频率的电磁波信号，从而在天线单元10上形成感应电流，该感应电流经滤波、放大后进入射频收发器。
阵列天线还包括去耦结构。其中，去耦结构包括去耦网络和与去耦网络连接的去耦传输线。具体地，相邻的两个天线单元10和20所对应的去耦网络之间相互连接，其中天线单元10对应的是第一去耦网络30，天线单元20对应的是第二去耦网络30’。第一去耦网络30和第二去耦网络30’均为三端口网络。第一去耦网络30具有连接馈源的输入端口(a 1,b 1)、连接天线单元10的输出端口(a 2,b 2)以及用于连接第二去耦网络30’的去耦合端口(a 3,b 3)。第二去耦网络30’具有连接馈源的输入端口(a’ 1,b’ 1)、连接天线单元20的输出端口(a’ 2,b’ 2)以及用于连接第一去耦网络30的去耦合端口(a’ 3,b’ 3)。其中，a 1、a 2、a 3、a’ 1、a’ 2和a’ 3是入射电压波振幅，b 1、b 2、b 3、b’ 1、b’ 2和b’ 3是反射电压波振幅。值得一提的是，本申请实施例中的“输入端口”和“输出端口”均只是从天线单元10发射信号的角度进行命名。可以理解地，天线单元10还可以接收信号，此时，上述“输出端口”可以作为输入端口，上述“输入端口”则可以作为输出端口，即，本申请的“输入端口”和“输出端口”的命名并不对端口的属性构成限定。图2中长度为d 1的传输线形成输出端口(a 2,b 2)，并且具有阻抗Z 2。长度为d 2的传输线形成输出端口(a’ 2,b’ 2)，并且具有阻抗Z 2。其中，d 1和d 2可以相等。长度为d 5的去耦传输线连接第一去耦网络30的去耦合端口(a 3,b 3)与第二去耦网络30’去耦合端口(a’ 3,b’ 3)，并具有阻抗Z 3。其中，第一去耦网络30与去耦传输线形成功分器，以将从第一去耦网络30的输入端口(a 1,b 1)输入的功率按该功分器的功分比分配至第一天线单元10和去耦传输线。第二去耦网络30’与去耦传输线形成功分器，以将从第二去耦网络30’的输入端口(a’ 1,b’ 1)输入的功率按照该预设比例分配至第二天线单元30和去耦传输线33，从而抵消两个天线单元10、20之间的互耦。
需要指出的是，图2中长度为d 1的传输线一侧还显示了具有阻抗Z 2的传输线，但这两条传输线在实物上对应的是同一条导线；同样地，长度为d 2的传输线、长度为d 5的去耦传输线也应如此理解。
如图3所示，其是本申请实施例的用于阵列天线的去耦结构示意图，其中至少第一去耦网络30、第二去耦网络30’以及连接在其间的去耦传输线33可组成本申请用于阵列天线的去耦结构。另外，该去耦结构和与之连接的阵列天线也可形成本申请的天线装置。
下文以图3中天线单元10对应的第一去耦网络30和天线单元20对应的第二去耦网络30’做为示例进 行具体介绍，可以理解的是，第二去耦网络30’可以与第一去耦网络30相同。
具体地，第一去耦网络30为三端口网络。在一些实施例中，该三端口网络包括第一传输线31和第二传输线32。其中，第一传输线31和第二传输线32的一端相互连接，并在连接处形成去耦合端口。第一传输线31的另一端形成与第一馈源40连接的输入端口。第二传输线32的另一端形成与天线单元10连接的输出端口。去耦传输线33的一端连接在第一去耦合网络30的去耦合端口。在此指出，文中所述的某一传输线的一端和另一端指的是该传输线的两个相对末端。
图3所示的实施例中，第二去耦网络30’与上述第一去耦网络30相同，也具有第一传输线31’和第二传输线32’。其中，第一传输线31’和第二传输线32’的一端相互连接，并在连接处形成去耦合端口。第一传输线31’的另一端形成与第二馈源40’连接的输入端口。第二传输线32’的另一端形成与天线单元20连接的输出端口。去耦传输线33’的一端连接在第二去耦合网络30’的去耦合端口。其中，第一馈源40和第二馈源40’可以是同一个馈源。
去耦传输线33的另一端连接在第二去耦网络30’的去耦合端口上，去耦传输线33’的另一端则连接在第一去耦网络30的去耦合端口上。如图3所示，第一去耦网络30和第二去耦网络30’共用一根去耦传输线33(33’)，通过该去耦传输线33(33’)将第一去耦网络30和第二去耦网络30’的去耦合端口连接起来。
本申请中的术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括至少一个该特征。
其中，两个天线单元10、20之间的耦合度可以通过第一去耦网络30、第二去耦网络30’的散射参数(即，S参数)和去耦传输线33的长度来进行确定。例如，要求两个天线单元10、20之间的耦合度达到预设耦合度D，则，可以将三端口网络的S参数和去耦传输线33的长度配置为使天线单元10、20之间的耦合度满足预设耦合度D。
容易明白的是，当第一去耦网络30和第二去耦网络30’采用相同的结构时，他们的S参数也是相同的。从而，在第一去耦网络30和第二去耦网络30’相同的情况下，两个天线单元10、20之间的耦合度与三端口网络(第一去耦网络30或第二去耦网30’)的S参数以及去耦传输线的长度之间的关系可以通过以下方式获得：
去耦网络的[S]矩阵为：
Figure PCTCN2021088921-appb-000001
其中，S 11、S 22、S 33是三端口网络单独存在时的三个端口的反射系数；S 12是输入端口直馈到输出端口的功率；S 13是从输入端口馈到去耦合端口的功率；S 23是从去耦合端口馈到输出端口的功率。
可将S 11、S 22、S 33和S 23设计为0，使该S参数矩阵为：
Figure PCTCN2021088921-appb-000002
在图2中的参考面Ⅱ处，三端口网络的去耦合端口连接了长度为d 5的去耦传输线，两个三端口网络组成的六端口网络的S参数关系式为：
Figure PCTCN2021088921-appb-000003
Figure PCTCN2021088921-appb-000004
其中，k为波数，e为自然常数，j为虚数的表示符号。
将式(3)中的矩阵写成分块矩阵形式：
Figure PCTCN2021088921-appb-000005
将式(5)改写成方程组形式：
Figure PCTCN2021088921-appb-000006
将式(4)简写为：
[a 2]＝[Γ]·[b 2]  (7)
将式(7)代入式(6)可得：
Figure PCTCN2021088921-appb-000007
由式(8)中第②式可得：
[b 2]＝{E-[S 22][Γ]} -1[S 21][a 1]  (9)
其中，E代表单位矩阵。
将式(9)代入式(8)中第①式可得：
[b 1]＝[S 11][a 1]+[S 12][Γ]{E-[S 22][Γ]} -1[S 21][a 1]  (10)
由式(10)可知，两个三端口网络之间通过去耦传输线连接后形成的四端口网络(1、2、1’、2’)的S参数矩阵为：
S Four-port＝[S 11]+[S 12][Γ]{E-[S 22][Γ]} -1[S 21]  (11)
在此指出，这里的四端口网络的四个端口是指两个三端口网络连接后，组成的整体对外的四个端口(a 1,b 1)、(a 2,b 2)、(a’ 1,b’ 1)和(a’ 2,b’ 2)。
将式(3)和式(5)所规划的分块矩阵代入式(11),即可得到该四端口网络的新的S参数矩阵为：
Figure PCTCN2021088921-appb-000008
将该四端口网络的端口顺序调整为1→1′→2→2′，则式(12)变为：
Figure PCTCN2021088921-appb-000009
将式(13)改写成分块矩阵的形式：
Figure PCTCN2021088921-appb-000010
设该两个天线单元形成的二元天线阵的S参数矩阵为：
Figure PCTCN2021088921-appb-000011
其中，S’ 12为二元天线初始隔离度的强度，即，两个相邻的天线单元10和20之间未连接去耦网络时的隔离度的强度；S’ 11、S’ 21和S’ 22分别为两个相邻的天线单元10和20之间未连接去耦网络时的输入反射系数、正向传输系数(增益)和输出反射系数。
两个三端口网络之间通过去耦传输线连接在一起后，形成的四端口网络再与两个天线单元10和20连接后，组建成一个二端口(1、1’)网络。该二端口网络的S参数矩阵为:
[S]＝[S 11]+[S 12][S array]{E-[S 22][S array]} -1[S 21]  (16)
在此指出，这里的二端口网络的两个端口是指两个三端口网络之间连接后、且分别连接了两个天线单元10和20之后，剩下的两个用于与馈源连接的端口(a 1,b 1)和(a’ 1,b’ 1)。
将式(13)与式(14)所定义的分块矩阵代入式(16)，可得：
Figure PCTCN2021088921-appb-000012
由式(17)可知，
Figure PCTCN2021088921-appb-000013
其中，S’ 12为初始隔离度的强度，即，两个相邻的天线单元10和20之间未连接第一去耦网络30和第二去耦网络30’时的隔离度的强度。
由此可知，通过设计去耦传输线33的长度d 5，以及三端口网络的S参数，即可精确定义天线间的耦合度。也即，当预设好所需的耦合度后，上式可表示为：
Figure PCTCN2021088921-appb-000014
因此，可以将去耦传输线33的长度d5和三端口网络的S参数配置为使天线单元10、20之间的耦合度满足预设耦合度。
在一些实施例中，第一去耦网络30与去耦传输线33可形成功分器。第二去耦网络30’与去耦传输线33也可形成功分器。在这种情况下，可以通过配置去耦传输线33的长度和功分器的功分比来使两个天线单元10、20之间的耦合度置零。
去耦传输线33的长度和功分器的功分比可以由两个天线单元10、20之间的初始隔离度来确定，其中，初始隔离度为两个天线单元之间未连接去耦网络时的隔离度。即，一些实施例中，两个天线单元10、20之间可以根据初始隔离度配置功分比和去耦传输线33的长度来为使两个天线单元10、20之间的耦合度置零。
具体地，功分器的功分比的可以通过两个天线单元之间的初始隔离度的强度(即S’ 12)来确定。去耦传输线33的长度则可以通过两个天线单元10、20之间的初始隔离度的相位(φ′ 12)来确定。
举例而言，当需要去耦网络将两个天线单元10、20之间的互耦完全抵消时，令预设耦合度为0，则
Figure PCTCN2021088921-appb-000015
由式(18)可知：
Figure PCTCN2021088921-appb-000016
其中，
Figure PCTCN2021088921-appb-000017
为功分器的功分比，因此，去耦网络的S参数可以根据功分比确定。
由式(19)可知，若令
Figure PCTCN2021088921-appb-000018
且φ 12＝φ 13，则
Figure PCTCN2021088921-appb-000019
Figure PCTCN2021088921-appb-000020
由此可知，将功分器的功分比配置为与两个天线单元10、20的初始隔离度的强度之间满足式(21)的关系，并将去耦传输线33的长度配置为与两个天线单元10、20的初始隔离度的相位之间满足式(21)的 关系，则可实现两个天线单元10、20之间的耦合度置零。
具体地，初始隔离度的强度S’ 12和相位φ′ 12是已知的，波数k与波长λ的关系是已知的，因此，用波长λ表示波数k，并代入式(21)，可得出d 5的计算公式：
Figure PCTCN2021088921-appb-000021
因此，计算出功分器的功分比以及去耦传输线33的长度d 5之后，可以设计出具有该功分比的功分器和具有该长度的去耦传输线33，以实现耦合度置零。
在一些实施例中，功分器的功分比与第一传输线31、第二传输线32和去耦传输线33的特性阻抗相关。由上述实施例可知，功分器的功分比可以根据初始隔离度的强度获知，因而，可以由此获知的功分比以及第一传输线31的特性阻抗来确定第二传输线32和去耦传输线33的特性阻抗。因此，第二传输线32和去耦传输线33的特性阻抗均可根据第一传输线31的特性阻抗和初始隔离度的强度来确定。
以功分器为T形结功分器作为示例，如图3所示，第二传输线32的特性阻抗Z 2与第一传输线31的特性阻抗Z 1以及功分比(初始隔离度的强度S’ 12)满足以下关系：
Z 2＝(1+|S’ 12|)ⅹZ 1   (23)
去耦传输线33的特性阻抗Z 3与第一传输线31的特性阻抗Z 1以及功分比(即初始隔离度的强度S’ 12)满足以下关系：
Figure PCTCN2021088921-appb-000022
因此，由上述可知，通过预设耦合度可以获知所要求的功分器的功分比，然后可以根据该功分比可以获知所需要的第二传输线32的特性阻抗Z 2和去耦传输线33的特性阻抗Z 3，从而配置去耦网络的第二传输线32和去耦传输线33，使得第二传输线32的特性阻抗满足所需要的特性阻抗Z 2，并使去耦传输线33的特性阻抗满足所需要的特性阻抗Z 3。
一些实施例中，可以通过配置传输线的线宽来使传输线的特性阻抗满足要求，即，第二传输线32的线宽根据第二传输线32的特性阻抗来确定。去耦合传输线33的线宽根据去耦传输线33的特性阻抗来确定。例如，按照上述关系式获得第二传输线32的特性阻抗Z 2之后，可以将第二传输线32的线宽配置为使其特性阻抗满足上述特性阻抗Z 2。举例而言，确定所需的第二传输线32的厚度、PCB板材的相对介电常数以及介质层厚度等因素后，根据特性阻抗和线宽之间的关系以及所需的特性阻抗Z 2，即可计算出第二传输线32的线宽。因此，根据该计算结果来配置第二传输线32的线宽，从而获得具有上述特性阻抗Z 2的第二传输线32。
类似地，可以通过配置去耦传输线33的线宽来使去耦传输线33满足上述所需的特性阻抗Z 3。去耦传输线33的线宽则可以根据特性阻抗和线宽之间的关系以及所需的特性阻抗Z 3来计算。因此，根据该计算结果来配置去耦传输线33的线宽，从而获得具有上述特性阻抗Z 3的去耦传输线33。
可以理解地，功分器还可以为其他类型，例如，wilkinson功分器。此时，第二传输线的特性阻抗Z 2和去耦传输线的特性阻抗Z 3则可以根据wilkinson功分器所对应的关系式来进行计算。
在一些实施例中，天线单元10、20的馈电端口的输入阻抗是50Ω匹配的，因此，将第二传输线32配置为3段1/4λ长度的传输线，即，将第二传输线32的长度配置为3/4λ，以使其阻抗匹配至50Ω。
结合上述去耦结构，本申请还提出了一种用于天线装置的去耦方法，该天线装置可以是上述任一实施例的天线装置。图7为本申请实施例的用于天线装置的去耦方法的流程示意图。
如图4所示，该去耦方法主要可以包括以下操作S101-S105。
操作S101：获取第一天线单元和第二天线单元之间的初始隔离度的强度；其中，初始隔离度为第一天线单元和第二天线单元未连接第一去耦网络和第二去耦网络时的隔离度。
操作S102：根据初始隔离度的强度确定功分器的功分比。
操作S103：将馈入第一去耦网络的功率按功分比分配至第一天线单元和去耦传输线。
在一些实施例中，该去耦方法还包括以下操作：获取初始隔离度的相位；根据初始隔离度的相位确定所述去耦传输线的长度。
在一些实施例中，第一天线单元和第二天线单元之间的耦合度根据去耦传输线的长度和第一三端口网络与第二三端口网络的散射参数确定。
在一些实施例中，根据以下关系式确定第一天线单元和第二天线单元之间的耦合度：
Figure PCTCN2021088921-appb-000023
Figure PCTCN2021088921-appb-000024
其中，S’ 12为第一天线单元和第二天线单元之间的初始隔离度度的强度，初始隔离度为第一天线 单元和第二天线单元未连接第一三端口网络和第二三端口网络时的隔离度；S 12和S 13为第一三端口网络的散射参数；d 5为去耦传输线的长度；k为波数，e为自然常数，j为虚数的表示符号。
在一些实施例中，根据第一天线单元和第二天线单元的初始隔离度的相位设置去耦传输线的长度。
在一些实施例中，根据前述关系式(21)确定功分器的功分比和去耦传输线的长度。在一些实施例中，根据第一传输线的特性阻抗和初始隔离度的强度确定第二传输线和去耦传输线的特性阻抗。
在一些实施例中，根据前述关系式(23)确定第二传输线的特性阻抗。
在一些实施例中，根据前述关系式(24)确定去耦传输线的特性阻抗。
在一些实施例中，根据第二传输线的特性阻抗和去耦合传输线的特性阻抗来计算第二传输线和去耦传输线的线宽。
在一些实施例中，根据前述关系式(22)确定去耦传输线的长度。
容易明白的是，本申请中在去耦原理部分所描述的相关内容均可适用于该去耦方法，在此不再赘述。
在一些实施例中，本申请的电子设备可以是如图5所示的手机100a，该手机100a包括但不限于以下结构：壳体41以及与壳体41连接的显示屏组件50。其中，壳体41和显示屏组件50之间形成容置空间。手机的其他电子元器件，例如，主板、电池和天线装置60等均设置在容置空间内。
具体而言，壳体41可以由塑料、玻璃、陶瓷、纤维复合材料、金属(例如，不锈钢，铝等)或者其他合适的材料制成。图5所示的壳体41大体为具有圆角的矩形。当然，壳体41也可以具有其他形状，例如圆形，长圆形和椭圆形等。
显示屏组件50包括显示屏盖板51以及显示模组52。显示模组52贴设于显示屏盖板51的内表面。壳体41与显示屏组件50的显示屏盖板51连接。其中，显示屏盖板51可以为玻璃材质；显示模组52可以为OLED柔性显示屏结构，具体可以包括基板、显示面板(Panel)以及辅料层等，另外，显示模组52与显示屏盖板51之间还可以夹设偏光膜片等结构，关于显示模组52的详细层叠结构此处不做限定。
天线装置60可以完全收容在壳体41内部，或者，也可以嵌设在壳体41上，并且，天线装置60的一部分可暴露在壳体41外表面上。
一些实施例中，天线装置60可以包括多个间隔设置的天线单元、多个去耦网络以及去耦传输线。多个去耦网络与多个天线单元一一对应，去耦传输线则连接在相邻的去耦网络之间。其中，去耦网络则可以是上述任一实施例的去耦网络。
一些实施例中，天线装置60的多个天线单元可以是图6和图7所示的四元直线阵，即，具有四个沿直线排列的天线单元10a、20a、10b和20b。
具体地，结合图8，该天线装置60包括依次叠层设置的第一基板61、第二基板62、第三基板63和射频芯片64，以及形成在第一基板61上的多个天线单元(图8仅示出2个天线单元10a、20a)，形成在第一基板61和第三基板63上的多个金属层661-668(其中，金属层665为接地层665)、穿设在第三基板63和第二基板62内的多根馈线以及设置在第三基板63内的多个去耦网络(例如，第一去耦网络30、第二去耦网络30’)以及连接在他们之间的去耦传输线33a。其中，多根馈线、多个去耦网络以及多个天线单元一一对应。本实施例以天线单元10a、第一去耦网络30和对应的馈线进行介绍。馈线用于将对应的天线单元10a、去耦网络30与射频芯片64连接。去耦传输线33a则用于将相邻的天线单元10a、20a对应的第一去耦网络30和第二去耦网络30’连接在一起，用以抵消天线单元10a、20a之间的耦合。可以理接地，天线装置60还可以包括其他信号传输线。
天线单元10a、20a用于收发射频信号。如图8所示，两个天线单元10a、20a相互间隔设置。天线单元10a、20a为双层贴片天线，包括相互隔离且一一对应的表层辐射片11a、21a和内层辐射片12a、22a。
第一基板61包括相对设置的第一外表面611和第一内表面612。表层辐射片11a、21a设置在第一外表面611，内层辐射片12a、22a设置在第一内表面612。通过第一基板61将内层辐射片12a、22a和表层辐射片11a、21a隔离，使得表层辐射片11a、21a和内层辐射片12a、22a之间间隔一定的距离，从而满足天线频段的性能要求。表层辐射片11a、21a和内层辐射片12a、22a在第一基板61的垂直投影至少部分重合。
第一基板61可以由诸如环氧树脂的热固性树脂、诸如聚酰亚胺树脂的热塑性树脂、包括诸如玻璃纤维(或玻璃布，或玻璃织物)和/或无机填料的增强材料以及热固性树脂和热塑性树脂的绝缘材料(例如，半固化片、ABF(Ajinomoto Build-up Film)、感光电介质(PID)等)制成。然而，第一基板61的材料不限于此。也就是说，玻璃板或陶瓷板也可用作第一基板61的材料。可选地，具有低的介电损耗的液晶聚合物(LCP)也可用作第一基板61的材料，以减小信号损耗。
在一些实施例中，第一基板61可以是半固化片，如图8所示，第一基板61包括叠设的三层半固化片。第一基板61的三层半固化片中，相邻的半固化片之间分别设有金属层662和663。第一基板61的第一外表面还设有金属层661，该金属层661与表层辐射片11a、21a位于同一层，且相互绝缘。第一基板61的第一内表面612设有金属层664，该金属层664与内层辐射片12a、22a位于同一层，且相互绝缘。金属层661、662、663和664可以由金属铜、铝、银、锡、金、镍、铅、钛或他们的合金等导电材料制成。本实 施例中，金属层661、662、663和664均为铜层。
金属层661的设置使得第一基板61的第一外表面611的铺铜率与第一基板61的其他半固化片的表面的铺铜率差异减少，在第一基板61制造的过程中，铺铜率差异减少能够减少气泡的产生，从而提升第一基板61的制造良率。同理，金属层664的设置也使得第一基板61的第一内表面612的铺铜率与第一基板61的其他半固化片的表面的铺铜率差异减少，以减少第一基板61制造过程中气泡的产生，从而提升第一基板61的制造良率。
第一基板61上还设有贯穿第一内表面612和第一外表面611接地过孔613，以使不同的金属层661、662、663和664彼此连接，并进一步连接到接地层665。具体地，可以将导电材料完全填充接地过孔613，或者可以将导电材料沿着接地过孔613的孔壁形成导电层。其中，导电材料可以是铜、铝、银、锡、金、镍、铅、钛或他们的合金等。接地过孔613可以具有圆柱状、沙漏状或者锥体状等。
第二基板62包括第一侧表面621和第二侧表面622，其中，第一侧表面621叠设在第一基板61的第一内表面612上。第二基板62可以为PCB板的核层，由聚酰亚胺、聚对苯二甲酸乙二醇酯、聚萘二甲酸乙二醇酯等材料制成。第二基板62上设有贯穿第一侧表面621和第二侧表面622的接地过孔623和馈线过孔624。
接地层665夹设在第二基板62和第三基板63之间。接地层665上开设有馈线过孔665a。
第三基板63包括相对设置的第二外表面631和第二内表面632。第三基板63的第二内表面632叠设于第二基板62的第二侧表面622，接地层665夹设在第二侧表面622和第二内表面632之间。
第三基板63的形成材料可以与第一基板61的材料相同。在一些实施例中，第三基板63可以是半固化片，并为多层结构。如图8所示，第三基板63包括三层半固化片。第三基板63的三层半固化片中，相邻的半固化片之间设有金属层666和667，分别作为馈电网络和控制线布线层。第三基板63的第二外表面631上设有金属层668，金属层668与射频芯片64焊接在一起。其中，金属层666、667和668可以由金属铜、铝、银、锡、金、镍、铅、钛或他们的合金等导电材料制成。本实施例中，金属层666、667和668均为铜层。
第三基板63上开设有布线过孔。布线过孔包括接地过孔633，以使不同的金属层666、667和668彼此连接，并进一步连接到接地层665。布线过孔还包括供馈线穿过的馈线过孔634和供控制线穿过的信号过孔635等。与第一基板61上的接地过孔613类似，第三基板63上的布线过孔内可以完全填充导电材料，也可以在孔壁上形成导电层。各种布线过孔的形状可以是圆柱状、沙漏状或者椎体状。
射频芯片64设置在第三基板63远离第一基板61的一侧，相当于前述实施例馈源，例如第一馈源40和第二馈源40’。当有多个馈源时，多个馈源可以相同或不同。
馈线包括第一馈线65和第二馈线67。去耦网络30、30’分别连接在对应的第一馈线65和第二馈线67之间。第一馈线65的一端设置在第三基板63远离第二基板62的一侧以连接射频芯片64，另一端延伸至第三基板63内，即，穿过第三基板63的馈线过孔634以连接至去耦网络30。第二馈线67的一部分设置在第三基板67内以连接去耦网络30，另一部分贯穿第二基板，即，穿过第二基板62的馈线过孔624以将连接对应的天线单元10a。因此，射频芯片64、第一馈线65、去耦网络30、第二馈线67和天线单元10依次连接，实现了天线单元10和射频芯片64之间的信号传输。馈线与各金属层，例如本实施例的金属层666、667、668以及接地层665相互绝缘。
此外，第三基板63上还设有其他信号传输线，例如控制线68和电源线69等。如图8所示，电源线69设置在第三基板63的第二外表面631上，并焊接在射频芯片64上。控制线68设置在第三基板63靠近射频芯片64的半固化片和与其相邻的半固化片之间，并穿过半固化片上的信号过孔635而与射频芯片64连接。
此外，第三基板63还用于承载多个去耦网络和去耦传输线33a，去耦网络可以是前述任一实施例的去耦网络。结合图7和图8，以第一去耦网络30和第二去耦网络30’为例。第一去耦网络30可以包括第一传输线31a和第二传输线32a。第一传输线31a的一端用于连接射频芯片64，另一端与第二传输线32a的一端连接，并在连接处形成去耦合端口。第二传输线32a的另一端连接对应的天线单元10a。具体地，第一传输线31a通过第一馈线65与射频芯片64连接。第二传输线32a通过第二馈线67与天线单元10a连接。第二去耦网络30’可以包括第一传输线31a’和第二传输线32a’。第一传输线31a’的一端用于连接射频芯片64，另一端与第二传输线32a’的一端连接，并在连接处形成去耦合端口。第二传输线32a’的另一端连接对应的天线单元20a。第一传输线31a’通过对应的第一馈线与射频芯片64连接。二传输线32a通过对应的第二馈线与天线单元20a连接。
去耦传输线33a连接第一去耦网络30和第二去耦网络30’之间。具体地，去耦传输线33a的一端连接在一个天线单元10a对应的第一传输线31a和第二传输线32a的连接处，去耦传输线33a的另一端连接在相邻的天线单元20a所对应的第一传输线31a’和第二传输线32a’的连接处。
第一传输线31a、第二传输线32a和去耦传输线33a形成一功分器。举例而言，从射频芯片64发出的 信号经过第一馈线65输入第一传输线31a之后，一部分通过第二传输线32a经第二馈线67传输至天线单元的内层辐射片12a，另一部分经去耦传输线33a传输至相邻的天线单元20a，从而抵消两个天线单元10a、20a之间的耦合。
两个天线单元10a、20a之间的耦合度可以通过该去耦网络的散射参数和去耦传输线33a的长度来进行定义。具体地，如上述阵列天线的实施例，本实施例的天线装置60的去耦网络的去耦传输线33a的长度d5以及去耦网络的S参数以及预设耦合度满足以下关系：
Figure PCTCN2021088921-appb-000025
一些实施例中，去耦网络中的去耦传输线33a的长度和功分器的功分比配置为使两个天线单元10a、20a之间的耦合度置零。
一些实施例中，去耦传输线33a的长度和功分器的功分比根据两个天线单元10a、20a之间的初始隔离度来进行配置。具体地，功分器的功分比根据初始隔离度的强度来进行配置，去耦传输线33a的长度则根据初始隔离度的相位来进行配置。例如，功分器的功分比与初始隔离度的强度之间、以及去耦传输线33a的长度与初始隔离度的相位之间的关系满足前述关系式(21)和(22)。
一些实施例中，功分器的功分比具体可以通过配置第二传输线32a和去耦传输线33a的特性阻抗来实现。例如，第二传输线32a的特性阻抗Z 2与第一传输线31a的特性阻抗Z 1以及功分比(初始隔离度的强度S’ 12)满足上述关系式(23)。去耦传输线33a的特性阻抗Z 3与第一传输线31a的特性阻抗Z 1以及功分比(即初始隔离度的强度S’ 12)满足上述关系式(24)。
如上述天线阵列的实施例所述，可以通过配置传输线的线宽来使传输线的特性阻抗满足要求。例如，第二传输线32a的线宽配置为使第二传输线32a满足上述所需的特性阻抗Z 2。去耦传输线33a的线宽配置为使去耦传输线33a满足上述所需的特性阻抗Z 3。
第一去耦网络30与去耦传输线33可以设置在第三基板63的一层上，例如，第三基板63靠近射频芯片64的半固化片上或者位于中间的半固化片上。图8所示的第一去耦网络30与去耦传输线33设置在第三基板63位于中间的半固化片上，即，与金属层666同层。第一去耦网络30的第一传输线31a和第二传输线32a，以及去耦传输线33均在该层上延伸并形成图案。一些实施例中，可以在金属层666所在层上形成长度满足上述所需长度d 5的去耦传输线33a。可以理解地，相邻的天线单元所对应的馈线之间的直线距离小于d 5时，去耦传输线33a可以形成弯折的图案，以满足长度的要求(如图7所示)。在其他一些实施例中，去耦传输线33a也可以呈弯曲的图案。本申请的第一去耦网络30、第二去耦网络30’与表层辐射片11a、21a和内层辐射片12a、22a位于不同的层。如图8所示，去耦传输线33a设置在天线单元10a、20a的下方，例如第三基板63内。图8所示的第一去耦网络30和第二去耦网络30’以及连接在他们之间的去耦传输线33与金属层666位于同一层，即，设置在第三基板63的最靠近接地层665的半固化片及其相邻的半固化片之间。可以理解地，在其他一些实施例中，第一去耦网络30和第二去耦网络30’以及连接在他们之间的去耦传输线33也可以与金属层667或者668同层。
去耦传输线33a也可以分布在不同的层，例如，去耦传输线33a的一部分分布在金属层666所在层，另一部分通过过孔而分布在金属层667所在层；或者，去耦传输线33a的一部分分布在金属层666所在层，一部分通过过孔分布在金属层667所在层，另一部分穿过过孔而分布在金属层668所在层。
在一些实施例中，去耦传输线33a的特性阻抗可以逐渐变化。具体地，从去耦传输线33a的两端到中间位置，去耦传输线33a的特性阻抗逐渐变化。传输线特性阻抗的变化可以通过传输线的线宽变化来实现。一些实施例中，从去耦传输线33a的两端到中间位置，去耦传输线33a的线宽逐渐变化。一些实施例中，从去耦传输线33a的两端到中间位置，去耦传输线33a的线宽逐级变化。例如，图7所示的去耦传输线33a包括依次连接的第一段331a、第二段332a、第三段333a、第四段334a和第五段335a，其中，每一段自身的宽度可以是均匀的。第一段331a和第五段335a的宽度相同。第二段332a和第四段334a的宽度相同。第一段331a的宽度小于第二段332a的宽度，第二段332a的宽度小于第三段333a的宽度。第五段335a的宽度小于第四段334a的宽度，第四段334a的宽度小于第三段333a的宽度。因此，从第一段331a到第二段332a到第三段333a，以及从第五段335a到第四段334a到第三段333a，特性小阻抗逐级变化，直至到第三段333a的特性阻抗达到50Ω。通过多级阻抗变换，去耦传输线33a的合适的特性阻抗能够实现多个频率点上面的全匹配，增加匹配的节数使得出现匹配的频率点也跟着增多，带宽也随之变宽。其中，第一段331a和第五段335a的特性阻抗可以根据功分器的功分比计算，如上述关系式(24)，其宽度可以由该特性阻抗计算得出；第三段333a的特性阻抗则为50Ω，其宽度也可以由该特性阻抗计算出；第二段332a和第四段334a的特性阻抗则可以等于第一段331a和第三段333a的特性阻抗的乘积的开方，其宽度可根据该计算出的特性阻抗进行计算。当然，在其它一些实施例中，去耦传输线33a的宽度也可以分4级或更多级变化。可以理解地，去耦传输线33a的宽度可以呈连续变化。
在一些实施例中，去耦传输线33a上还可以设置枝节336a(如图7所示)，枝节336a设置在第三段333a，用以调整去耦网络的传输特性。
第二传输线32a的长度可以为3/4λ。如图7所示的实施例中，第二传输线32a在去耦传输线33所在 层上形成朝远离去耦传输线33的方向弯折或弯曲的图案。
以上针对两个天线单元10a和20a、第一去耦网络30和第二去耦网络30’以及去耦传输线3进行了介绍。然而，容易理解的是，还可以为天线单元20a和10b设置本申请的去耦结构，或者，还可以为天线单元10b和20b同样地设置本申请的去耦结构(如图7所示)。举例而言，可为天线单元10b和20a设置第三去耦网络35和第四去耦网络35’以及连接在第三去耦网络35和第四去耦网络35’之间的去耦传输线33a’。该第三去耦网络35可与上述的第一去耦网络30相同或相类似，该第四去耦网络35’可与上述的第二去耦网络30’相同或相类似。第三去耦传输线33a’可与上述的去耦传输线33a相同或相类似。
当采用如图7所示的三个以上的天线单元时，这些去耦网络和去耦传输线也可以分布在不同的层。例如，第一去耦网络30和第二去耦网络30’以及连接在他们之间的去耦传输线33a可分布在图8所示的金属层666所在层，而第三去耦网络35和第四去耦网络35’以及连接在第三去耦网络35和第四去耦网络35’之间的去耦传输线33a’可分布在图8所示的金属层667所在层。
参见图9，其是本申请另一实施例的天线装置的示意图。在此实施例的天线装置60中，可将例如手机的中框42的顶端部分通过缝隙44分割为两段，这两段可分别作为第一天线10a和第二天线20a。该中框42中可设置一电路板43，本申请上述的第一去耦网络30和第二去耦网络30’以及去耦传输线33(参见图3)可布置在该电路板43上。第一馈源40和第二馈源40’可与该电路板43连接，该电路板43又与该第一天线10a和第二天线20a连接。缝隙44通常可非居中设置，例如靠近中框42的左侧或右侧设置。
本实施例以如图6和图7所示的四元直线阵进行去耦设计作为示例，该四元直线阵的中心工作频率为28GHz。在此指出，根据3GPP TS 38.101协议的规定，处在24.25GHz至52.6GHz之间的频率通常称为毫米波(mm Wave)；因此，本申请提出的去耦结构可为一种毫米波阵列天线去耦结构。在进行去耦设计前，该四元直线阵的反射系数如图10所示。图11示出了连接去耦网络前后天线单元的反射系数比对曲线。由图11可见，受耦合效应影响，去耦前阵中单元的-10dB工作带宽为26.68GHz-29.78GHz，-6dB工作带宽为25.57GHz-29.94GHz；去耦后-6dB工作带宽为24.03GHz-29.85GHz，工作带宽展宽，显著改善了天线的匹配特性。
图12示出了连接去耦网络前后天线单元的耦合系数的比对曲线。由图10可知：在25.7GHz～28.4GHz频段内，耦合系数较之前均有所降低，实现了宽带互耦抑制；在频率27GHz处，受耦合效应影响，去耦前单元间的耦合系数为-10.2dB，去耦后天线的耦合系数降低了11dB，有效抑制了单元间的耦合效应。
图13-图15为连接去耦网络前后波束扫描至0°、45°与50°时天线装置的增益扫频比对曲线。由图13可见：波束指向0°时，在23.8GHz-25.5GHz频率范围内，去耦后增益较去耦前有所提升，在24.4GHz增益提升最大值为0.68dB，在25.5GHz-GHz频率范围内，去耦前后增益基本一致。如图14所示，波束指向45°时，在23GHz-27.6GHz频率范围内，去耦后增益较去耦前均有所提升，在24.7GHz增益提升最大值为2.27dB。如图15所示，波束指向50°时，在22.9GHz-27.7GHz频率范围内，去耦后增益较去耦前均有所提升，在24.8GHz增益提升最大值为2.34dB，显著提升了阵列天线的辐射能力。
综上所述，本申请的天线装置，在天线单元下方引入去耦网络的概念，无需改变阵列天线单元的结构，只需对去耦传输线33a的长度和去耦网络的S参数进行配置，即可精确定义天线单元10、20之间的耦合度，即能降低天线单元间的互耦，拓展扫描角，提升扫描增益。另外，还能依据去耦前隔离度的强度计算出功分器的功分比，再依据公式确定功分器中各传输线的特性阻抗，进而能够计算出对应特性阻抗的传输线的宽度，以便制作出功分器。基于此方法，可以提高多天线系统的隔离度。
以上所述仅为本申请的实施例，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。

Claims (20)

  1. 一种天线装置，其特征在于，包括：
    相邻设置的第一天线单元和第二天线单元；
    第一去耦网络，具有输入端口、输出端口和去耦合端口，所述输出端口与所述第一天线单元连接，所述输入端口用于与第一馈源连接；
    第二去耦网络，具有输入端口、输出端口和去耦合端口，所述第二去耦网络的输出端口与所述第二天线单元连接，所述第二去耦网络的输入端口用于与第二馈源连接；以及
    去耦传输线，连接在所述第一去耦网络的去耦合端口和所述第二去耦网络的去耦合端口之间，所述第一去耦网络和所述去耦传输线形成功分器，以将从所述第一去耦网络的输入端口输入的功率按所述功分器的功分比分配至所述第一天线单元和所述去耦传输线。
  2. 根据权利要求1所述的天线装置，其特征在于，所述第一天线单元和所述第二天线单元之间的耦合度根据所述去耦传输线的长度和所述第一去耦网络和所述第二去耦网络的散射参数来确定。
  3. 根据权利要求2所述的天线装置，其特征在于，所述第一去耦网络的散射参数根据所述功分比确定。
  4. 根据权利要求3所述的天线装置，其特征在于：所述功分比根据所述第一天线单元和第二天线单元的初始隔离度的强度来确定，其中，初始隔离度为所述第一天线单元和所述第二天线单元未连接所述第一去耦网络和所述第二去耦网络时的隔离度。
  5. 根据权利要求4所述的天线装置，其特征在于：所述去耦传输线的长度根据所述第一天线单元和所述第二天线单元的初始隔离度的相位来确定。
  6. 根据权利要求1所述的天线装置，其特征在于，所述第一天线单元和所述第二天线单元之间的耦合度与所述去耦传输线的长度和所述第一去耦网络的散射参数之间满足以下关系：
    Figure PCTCN2021088921-appb-100001
    其中，S’ 12为所述第一天线单元和所述第二天线单元之间的初始隔离度的强度，所述初始隔离度为所述第一天线单元和所述第二天线单元未连接所述第一去耦网络和所述第二去耦网络时的隔离度；所述S 12和S 13为所述第一去耦网络的散射参数；d 5为去耦传输线的长度，k为波数，e为自然常数，j为虚数的表示符号。
  7. 根据权利要求1所述的天线装置，其特征在于：定义所述第一天线单元和所述第二天线单元未连接所述第一去耦网络和所述第二去耦网络时的隔离度为初始隔离度；
    所述功分比与所述初始隔离度的强度，以及所述去耦传输线的长度与所述初始隔离度的相位满足以下关系：
    Figure PCTCN2021088921-appb-100002
    其中，S’ 12为所述初始隔离度的强度；S 12和S 13为所述第一去耦网络的散射参数；
    Figure PCTCN2021088921-appb-100003
    为所述功分比；φ’ 12为所述初始隔离度的相位；d 5为去耦传输线的长度，k为波数。
  8. 根据权利要求7所述的天线装置，其特征在于：所述去耦传输线的长度与所述第一天线单元和所述第二天线单元的初始隔离度的相位满足以下关系：
    Figure PCTCN2021088921-appb-100004
    其中，Pi对应的数值为3.14，λ为波长。
  9. 根据权利要求7所述的天线装置，其特征在于，所述第一去耦网络和所述第二去耦网络均包括第一传输线和第二传输线；所述第一传输线和所述第二传输线的一端相互连接，并在连接处形成所述去耦合端口，所述第一传输线的另一端形成所述输入端口，所述第二传输线的另一端形成所述输出端口。
  10. 根据权利要求9所述的天线装置，其特征在于，所述第二传输线和所述去耦传输线的特性阻抗均根据所述第一传输线的特性阻抗和所述初始隔离度的强度来确定。
  11. 根据权利要求10所述的天线装置，其特征在于，所述第二传输线的线宽根据所述第二传输线的特性阻抗来确定，所述去耦合传输线的线宽根据所述去耦传输线的特性阻抗来确定。
  12. 根据权利要求9所述的天线装置，其特征在于，所述第二传输线的特性阻抗与所述第一传输线的特性阻抗、所述初始隔离度的强度满足以下关系：
    Z 2＝(1+|S’ 12|)ⅹZ 1；
    其中，Z 1为第一传输线的特性阻抗，Z 2为第二传输线的特性阻抗。
  13. 根据权利要求9所述的天线装置，其特征在于，所述去耦传输线的特性阻抗与所述第一传输线的特性阻抗、所述初始隔离度的强度满足以下关系：
    Figure PCTCN2021088921-appb-100005
    其中，Z 1为第一传输线的特性阻抗，Z 3为去耦传输线的特性阻抗。
  14. 根据权利要求9所述的去耦结构，其特征在于：所述第二传输线的长度为3/4λ，其中，λ为波长。
  15. 根据权利要求1所述的天线装置，其特征在于：所述第一天线单元和第二天线单元具有相同的辐射特性；所述第一去耦网络和所述第二去耦网络配置为具有相同的散射参数。
  16. 一种电子设备，其特征在于，包括：
    壳体，
    显示屏组件，与所述壳体连接，并与所述壳体形成容置空间；
    馈源，设置在所述容置空间内；以及
    天线装置，至少部分设置在所述容置空间内，所述天线装置包括：
    多个间隔设置的天线单元；
    多个去耦网络，与所述多个天线单元一一对应，其中，每个所述去耦网络均具有输入端口、输出端口和去耦合端口，所述输出端口与对应的天线单元连接，所述输入端口与所述馈源连接；以及
    去耦传输线，连接在相邻的所述去耦合端口之间，所述去耦网络和连接在该去耦网络上的去耦传输线形成功分器，以将从所述去耦网络的输入端口输入的功率按所述功分器的功分比分配至所述去耦网络对应的天线单元和所述去耦传输线。
  17. 根据权利要求16所述的电子设备，其特征在于，所述馈源包括多个馈源，所述多个馈源与所述多个去耦网络一一对应，每一所述输入端口与对应的馈源连接。
  18. 一种用于天线装置的去耦方法，其特征在于，所述天线装置包括馈源、相邻设置的第一天线单元和第二天线单元、连接在所述第一天线单元和所述馈源之间的第一去耦网络，连接在所述第二天线单元和所述馈源之间的第二去耦网络，以及连接在所述第一去耦网络和所述第二去耦网络之间的去耦传输线；所述第一去耦网络与所述去耦传输线形成功分器；所述去耦方法包括：
    获取所述第一天线单元和所述第二天线单元之间的初始隔离度的强度；其中，所述初始隔离度为所述第一天线单元和所述第二天线单元未连接所述第一去耦网络和所述第二去耦网络时的隔离度；
    根据所述初始隔离度的强度确定所述功分器的功分比；和
    将馈入所述第一去耦网络的功率按所述功分比分配至所述第一天线单元和所述去耦传输线。
  19. 根据权利要求18所述的去耦方法，其特征在于，还包括：
    获取所述初始隔离度的相位；和
    根据所述初始隔离度的相位确定所述去耦传输线的长度。
  20. 根据权利要求19所述的去耦方法，其特征在于，所述功分比与所述初始隔离度的强度，以及所述去耦传输线的长度与所述初始隔离度的相位满足以下关系：
    Figure PCTCN2021088921-appb-100006
    其中，S’ 12为初始隔离度的强度；所述S 12和S 13为所述第一去耦网络的散射参数；
    Figure PCTCN2021088921-appb-100007
    为所述功分比；φ’ 12为初始隔离度的相位，d 5为去耦传输线的长度，k为波数。
PCT/CN2021/088921 2020-05-12 2021-04-22 天线装置、电子设备及用于天线装置的去耦方法 WO2021227812A1 (zh)

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