WO2021213349A1 - Filter element, multiplexer, and communication device - Google Patents

Filter element, multiplexer, and communication device Download PDF

Info

Publication number
WO2021213349A1
WO2021213349A1 PCT/CN2021/088256 CN2021088256W WO2021213349A1 WO 2021213349 A1 WO2021213349 A1 WO 2021213349A1 CN 2021088256 W CN2021088256 W CN 2021088256W WO 2021213349 A1 WO2021213349 A1 WO 2021213349A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
filter element
filter
pin
element according
Prior art date
Application number
PCT/CN2021/088256
Other languages
French (fr)
Chinese (zh)
Inventor
蔡华林
庞慰
Original Assignee
诺思(天津)微系统有限责任公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 诺思(天津)微系统有限责任公司 filed Critical 诺思(天津)微系统有限责任公司
Publication of WO2021213349A1 publication Critical patent/WO2021213349A1/en

Links

Images

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/703Networks using bulk acoustic wave devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/205Constructional features of resonators consisting of piezoelectric or electrostrictive material having multiple resonators
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/48Coupling means therefor
    • H03H9/52Electric coupling means
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/54Filters comprising resonators of piezo-electric or electrostrictive material
    • H03H9/58Multiple crystal filters
    • H03H9/60Electric coupling means therefor

Definitions

  • the present invention relates to the field of filter technology, in particular to a filter element, multiplexer and communication equipment.
  • the first packaging method is to use two upper and lower wafers for packaging.
  • the metal bond is used for sealing in the middle to ensure good air tightness.
  • the chip for manufacturing the resonator is connected to the lower metal pin PAD through the through hole of the package chip.
  • This structure is then welded to the package substrate, and the whole is covered with plastic packaging material to obtain the final filter chip.
  • This packaging form can ensure air tightness, so that the reliability of the filter can be guaranteed, and it will not be affected by external humidity and other gases and impurities to the performance of the filter.
  • the through-hole traces connecting the two chips are longer, which brings greater metal loss, which will worsen the insertion loss; on the other hand, because the metal bond between the two chips must be realized Therefore, it is necessary to add a metal ring (or called a seal ring) for sealing and bonding around the resonator pattern.
  • a metal ring or called a seal ring
  • the metal ring needs to have a certain width to ensure reliable bonding, and it must resonate with all internal resonators.
  • the pattern of the device has a certain distance, so the metal ring will occupy a larger area. Generally speaking, the area occupied by the metal ring is between 20% and 30%. So in this respect, the cost equivalent to each chip will increase by 20% to 30%. And because of the use of packaged chips, the cost is further increased.
  • the second packaging method in the prior art is to directly connect metal solder balls on the chip for manufacturing the resonator, and then solder the chip on the packaging substrate through the metal balls, and cover the top of the chip with a sealed isolation structure, such as a film structure or Other forms of isolation structure are used to isolate the internal structure from the outside, and then cover the plastic material to obtain the final filter element.
  • this packaging method avoids the metal ring used for hermetic bonding and reduces the chip area. On the other hand, it also removes the wafer below for hermetic bonding, which further reduces the cost.
  • the chip for manufacturing the resonator is directly connected to the package substrate, and the connection through hole with the chip packaged below is also removed, the metal loss in this area is also eliminated, so the overall insertion loss is also improved.
  • the filter obtained by the second packaging method cannot use the input and output generated by the first packaging method and the capacitive and inductive coupling to the ground, and its performance will be affected. Specifically, since the capacitive coupling between input and output cannot be formed by a metal ring, the out-of-band suppression, especially the right-side out-of-band suppression, will be greatly deteriorated.
  • the present invention proposes a filter element, multiplexer, and communication device, which can improve the right side suppression of the filter passband without using a lower wafer and a sealing ring.
  • a filter element is provided.
  • the filter layout of the filter element of the present invention includes multiple resonators that make up the filter, and includes input pins, output pins, and one or more ground pins; the package substrate of the filter element includes input Pin, output pin, one or more ground pins; the layout structure also includes a metal connection line connected to the ground pin; a part of the metal connection line is close to the input pin, and the other part is close to the output Pin to form a coupling capacitor between the input end and the output end of the filter; and/or, the inside or surface of the package substrate further includes a metal connection wire connected to the ground pin; the metal connection A part of the wire is close to the input pin, and the other part is close to the output pin, so that a coupling capacitor is formed between the input end and the output end of the filter.
  • the metal connecting lines are arranged along the edges of the layout, and form a closed metal ring or an unclosed metal fold line.
  • the metal connection lines are arranged along the edge of the package substrate, and form a closed metal ring or an unclosed metal fold line; or, the metal connection lines are arranged along the middle of the package substrate and are connected to the ground.
  • the pins are connected and form a non-closed metal fold line.
  • the metal connecting wires are distributed on different layers of the chip where the multiple resonators are located.
  • the metal connecting wires are distributed on different layers of the packaging substrate.
  • the capacitance value of the coupling capacitor is between 0.5 fF and 5 fF.
  • the capacitance value of the coupling capacitor is between 1fF and 3fF.
  • the pins of the filter chip are connected to the metal traces on the top of the package substrate via metal balls; the upper and periphery of the filter chip are covered with a sealing layer.
  • a multiplexer including the filter element of the present invention.
  • a communication device including the filter element of the present invention.
  • the required coupling is formed on the layout of the resonator or on the package substrate through a specific metal connection, so as to move the corresponding out-of-band zero point, thereby helping to improve the passband of the filter.
  • Right side inhibition is formed on the layout of the resonator or on the package substrate through a specific metal connection, so as to move the corresponding out-of-band zero point, thereby helping to improve the passband of the filter.
  • FIG. 1 is a schematic diagram of the first packaging method according to the prior art
  • Fig. 2 is a schematic diagram of a second packaging method according to the prior art
  • 3A and 3B are schematic diagrams of patterns of an upper wafer and a lower wafer of a bulk acoustic wave filter in the prior art, respectively;
  • Fig. 4 is a filter layout according to a second packaging method in the prior art
  • 5A and 5B are schematic diagrams of generating capacitance according to the seal ring of the prior art
  • 6A to 6D are schematic diagrams of performing circuit analysis on the coupling between the input and output ends of the filter in the prior art in the embodiment of the present invention.
  • FIG. 7 is a schematic diagram of analyzing the influence of grounding and non-grounding of the seal ring on out-of-band suppression in the embodiment of the present invention.
  • 8A to 8F are schematic diagrams of connecting wires on the layout of the resonator according to an embodiment of the present invention to form a coupling capacitor;
  • FIG. 9 is a schematic diagram of a pattern on a packaging substrate according to the prior art.
  • FIGS. 10A to 10F are schematic diagrams of forming a coupling capacitor on the surface of a package substrate through a connecting line according to an embodiment of the present invention
  • 10G to 10I are schematic diagrams of forming a coupling capacitor in the middle of the package substrate through a section of connecting line according to an embodiment of the present invention
  • 11A and 11B are schematic diagrams of improving the suppression of the filter on the right side by increasing the coupling capacitance between the input and output according to an embodiment of the present invention
  • Figure 12A and Figure 12B are based on Figure 11A and Figure 11B, after increasing the coupling capacitance to 4fF;
  • FIG. 13 is a schematic diagram of a comparison of insertion loss according to an embodiment of the present invention.
  • the required coupling is formed on the layout of the resonator or on the package substrate through a specific metal connection, so as to move the corresponding out-of-band zero point ,Improve the inhibition of the right side.
  • Fig. 1 is a schematic diagram of the first packaging method according to the prior art.
  • the first packaging method uses wafer-level packaging.
  • wafer 1 wafer1
  • wafer 2 wafer 2
  • PAD pins
  • through holes are made at the position of the PAD, and the signal and ground on wafer1 are connected through the through holes.
  • Laminate can include multiple layers of metal with a dielectric layer in the middle to form a multilayer structure.
  • the metal layers of each layer can integrate passive devices and provide connections between some pins.
  • plastic encapsulant for packaging.
  • the molding compound uses epoxy resin, or other special packaging materials used to improve power capacity or performance and reduce costs.
  • Fig. 2 is a schematic diagram of a second packaging method according to the prior art.
  • the main difference of the second packaging method is that the wafer2 below is removed, and the PAD on the wafer1 with the resonator (Resonator) is directly connected to the package substrate (Laminate ) On the top metal trace (Top metal). Because it is necessary to ensure that the resonator on wafer1 is in a sealed state to avoid the influence of the external environment, it is necessary to cover the sealing layer above wafer1 to isolate the internal resonator from the external environment. Finally, plastic encapsulant is covered on the structure for encapsulation.
  • FIGS. 3A and 3B are schematic diagrams of the patterns of the upper wafer and the lower wafer of the bulk acoustic wave filter in the prior art, respectively.
  • the sealring around Figure 3A is the metal sealing ring of wafer1.
  • the sealing ring needs to have a certain width to ensure the reliability of the seal. At the same time, it needs to have a certain distance from the internal resonator, so it needs to occupy a large area, which generally occupies the entire area. 20%-30% of a die.
  • S1 to S4 are series resonators
  • P1 to P3 are parallel resonators
  • the number of series and parallel resonators is not limited.
  • the connecting lines between the various resonators in the figure are omitted.
  • the surrounding area in Figure 3B is the sealing ring of wafer2, and the two wafers are bonded together by wafer-level bonding to ensure good sealing of the internal resonator.
  • through holes will be made on the PAD of wafer2 and connected to the other side of wafer2, and the other side will also be made of PAD to connect with other package structures.
  • Fig. 4 is a layout of a filter according to a second packaging method in the prior art.
  • This packaging method only uses wafer1, and the metal sealing ring structure on wafer1 is removed.
  • the input pin IN, output pin OUT and ground pin G1, G2 are directly connected to the bump metal ball, and the bump metal ball is connected to the package.
  • This method removes wafer2 on the one hand, and sealring on the other. There are more dies per wafer, which greatly reduces the cost; at the same time, because the connection vias between wafer1 and wafer2 are removed, This part of the metal loss is eliminated, and the insertion loss will also be significantly improved.
  • FIGs 5A and 5B are schematic diagrams of capacitance generated by a seal ring according to the prior art.
  • the sealing ring Sealring has a certain distance from the input and output PADs (IN and OUT), which will generate capacitors C1 and C2, thereby forming a coupling effect.
  • the coupling capacitance between IN and OUT is also removed.
  • FIGS. 6A to 6D are schematic diagrams of performing circuit analysis on the coupling between the input and output ends of the filter in the prior art in the embodiment of the present invention.
  • Fig. 6A there is capacitive coupling between the input end and the output end (shown by the black dots in the figure, the same below), and the out-of-band transmission zero point will move, which changes the out-of-band suppression characteristics of the filter.
  • FIG. 6B there is capacitive coupling between the input and output ends, and the sealring, as a section of transmission line, has the effect of the capacitance and inductance elements in the box.
  • Figure 6C a certain section of the sealring is grounded, thereby forming an inductance with the ground.
  • Fig. 6D a certain section of the sealring is grounded to have ground inductance. At the same time, considering the sealring as a section of transmission line, it has the effect of the capacitance and inductance elements in the box.
  • FIG. 7 is a schematic diagram of analyzing the influence of grounding and non-grounding of the seal ring on out-of-band suppression in the embodiment of the present invention.
  • the solid line and the dashed line in FIG. 7 correspond to grounding and non-grounding, respectively. It can be seen from Figure 7 that the out-of-band suppression characteristics can be improved by adjusting the grounding.
  • the filter element adopts the second packaging method, and a connecting wire is used to form a capacitor. Because after removing the sealring, the coupling between the input and the output is eliminated, and the right side of the filter out-of-band suppression will deteriorate. Therefore, an additional coupling capacitor between the input and output is needed to improve the right-side out-of-band suppression.
  • the connecting wires can be arranged on the resonator layout, the package substrate, or both.
  • FIGS. 8A to 8F are schematic diagrams of connecting wires on the layout of the resonator according to an embodiment of the present invention to form a coupling capacitor.
  • connecting wires 8A to 8F can be provided on wafer1, and the connecting wires 8A to 8F in each figure are respectively connected to ground pins G1 or G2 to form a closed ring or Unclosed polyline.
  • the shape and size of the broken line can be changed according to the layout and the size of the chip boundary.
  • the broken line needs to be arranged between the input pin IN and the output pin OUT on the chip.
  • IN and OUT have a certain distance and enclosing length. The distance and enclosing length determine the size of the capacitor.
  • the broken line can be routed on different layers inside the chip, and it is necessary to avoid the pattern of the internal resonator as much as possible, and only establish an electrical coupling relationship between IN and OUT. At the same time, it is necessary to consider the manufacturing rules of the chip edge, and try not to increase the chip size.
  • Fig. 9 is a schematic diagram of a pattern on a package substrate (Laminate) according to the prior art.
  • the circular pad in the middle of FIG. 9 is connected to the ground pins G1 and G2, and the bottom is the through hole in the package substrate.
  • Figures 10A to 10I also have similar circular pads.
  • 10A to 10F are schematic diagrams of forming a coupling capacitor on the surface of a package substrate (Laminate) through a section of connecting lines (10A-10F) according to an embodiment of the present invention. As shown in FIGS. 10 to 10F, the connecting lines may be distributed along the edge of the package substrate.
  • FIGS. 10 to 10F the connecting lines may be distributed along the edge of the package substrate.
  • 10G to 10I are schematic diagrams of forming a coupling capacitor through a section of connecting wires (10G to 10I) in the middle of the package substrate according to an embodiment of the present invention.
  • the middle here is not limited to the geometric center of the package substrate, but relative to the above-mentioned distribution along the edge of the package substrate.
  • the wire When the wire is connected to the ground pin, it can be directly connected to the ground pin, as shown in Fig. 10H and Fig. 10I; or as shown in Fig. 10G, the connecting wire is connected to the middle circular pad. It is not on the same layer as the ground pin, so it is connected to the ground pin through a through hole.
  • traces are formed on the surface or inside of the package substrate, and can also be distributed in layers in the package substrate, and the design flexibility can be further increased by coupling with G1 and G2.
  • the connection line needs to be arranged on the substrate between the input pin IN and the output pin OUT.
  • IN and OUT have a certain distance and enclosing length. The distance and enclosing length determine the size of the capacitor.
  • the connecting wires can be routed on different layers inside the substrate, and it is necessary to avoid the wires in the inner substrate as much as possible, and only establish an electrical coupling relationship between IN and OUT. At the same time, it is necessary to consider the manufacturing rules of the edge of the package substrate, and try not to increase the size of the substrate.
  • FIG. 11A and 11B are schematic diagrams of improving the suppression of the filter on the right side by increasing the coupling capacitance between the input and output according to an embodiment of the present invention.
  • the solid line in the figure corresponds to increasing the coupling capacitance
  • the dashed line corresponds to not increasing the coupling capacitance.
  • Fig. 11A shows the suppression of the adjacent zone
  • Fig. 11B shows the suppression of the far zone. It can be seen from the figure that through the addition of the coupling capacitor, the transmission zero point near 2.52GHz on the right moves to near 2.54GHz, so as to ensure that the suppression above 2.54GHz is improved.
  • the frequency bands in this area have B7 transmitter frequency (2.5GHz ⁇ 2.57GHz), B41 (2.496GHz ⁇ 2.69GHz). For far band suppression, there is almost no effect.
  • the capacitance formed in the above figure is about 2fF (Flying method).
  • Figures 12A and 12B are based on Figures 11A and 11B, after increasing the coupling capacitance to 4fF. It can be seen from FIG. 12A and FIG. 12B that although the right side suppression is further improved, and the far-band suppression (see FIG. 12B) is also improved, the left side suppression has deteriorated, so the aforementioned coupling capacitor needs to be within a certain range. This interval can be limited to 0.5fF to 5fF, and further, it can be limited to 1fF to 3fF.
  • FIG. 13 is a schematic diagram of insertion loss comparison according to an embodiment of the present invention, in which the solid line corresponds to the embodiment of the present invention, and the dotted line corresponds to a situation where wafer1 and wafer2 are connected through holes when wafer2 is present. It can be seen from FIG. 13 that with the technical solution of the embodiment of the present invention, the insertion loss of the filter is improved by more than 0.1 dB.

Abstract

A filter element. A filter layout of the filter element comprises multiple resonators constituting a filter, and comprises an input pin, an output pin, and one or more grounding pins. A packaging substrate of the filter element comprises an input pin, an output pin, and one or more grounding pins. A layout structure further comprises a metal connecting line connected to the grounding pins, a part of the metal connecting line closes to the input pin, and the other part closes to the output pin, so that coupling capacitance is formed between an input end and an output end of the filter; and/or the inner portion or the surface of the packaging substrate further comprises a metal connecting line connected to the grounding pins; a part of the metal connecting line closes to the input pin, and the other part closes to the output pin, so that coupling capacitance is formed between the input end and the output end of the filter.

Description

滤波器元件和多工器以及通信设备Filter components and multiplexers and communication equipment 技术领域Technical field
本发明涉及滤波器技术领域,特别地涉及一种滤波器元件和多工器以及通信设备。The present invention relates to the field of filter technology, in particular to a filter element, multiplexer and communication equipment.
背景技术Background technique
近年来的通信设备小型化和高性能趋势的加快,给射频前端提出了更高的挑战。在射频通信前端中,广泛采用了体声波滤波器。In recent years, the trend of miniaturization and high performance of communication equipment has accelerated, which has put forward higher challenges for the radio frequency front end. In the radio frequency communication front end, bulk acoustic wave filters are widely used.
体声波滤波器的为了避免其中的层叠结构受环境影响,对滤波器的性能和可靠性造成降低,第一种封装方式是采用上下两片晶片来进行封装。中间采用金属键合来密封,保证良好的气密性。制造谐振器的晶片通过封装晶片的通孔连接到下方的金属管脚PAD上。此结构再焊接到封装基板上,整体再覆盖塑封材料,得到最终的滤波器芯片。这种封装形式能保证气密性,使滤波器的可靠性能得到保证,且不会受到外界湿度以及其他气体及杂质对滤波器性能造成的恶化。但有两方面的不利之处:一方面因为连接两片晶片的通孔走线较长,带来较大的金属损耗,会恶化插损;另一方面,由于要实现两片晶片的金属键合,所以在谐振器图形的周围需要在外部增加一圈用于密封键合的金属环(或称密封环),由于金属环需要有一定的宽度保证键合可靠,且要和内部所有的谐振器的图形有一定距离,所以金属环会占据较大的面积,一般来说,金属环占据的面积在20%~30%之间。所以从这方面来讲,折合到每颗芯片的成本会增加20%~30%。并且由于封装晶片的使用,又进一步增加了成本。In order to prevent the stacked structure of the BAW filter from being affected by the environment, which will reduce the performance and reliability of the filter, the first packaging method is to use two upper and lower wafers for packaging. The metal bond is used for sealing in the middle to ensure good air tightness. The chip for manufacturing the resonator is connected to the lower metal pin PAD through the through hole of the package chip. This structure is then welded to the package substrate, and the whole is covered with plastic packaging material to obtain the final filter chip. This packaging form can ensure air tightness, so that the reliability of the filter can be guaranteed, and it will not be affected by external humidity and other gases and impurities to the performance of the filter. However, there are two disadvantages: on the one hand, the through-hole traces connecting the two chips are longer, which brings greater metal loss, which will worsen the insertion loss; on the other hand, because the metal bond between the two chips must be realized Therefore, it is necessary to add a metal ring (or called a seal ring) for sealing and bonding around the resonator pattern. Because the metal ring needs to have a certain width to ensure reliable bonding, and it must resonate with all internal resonators. The pattern of the device has a certain distance, so the metal ring will occupy a larger area. Generally speaking, the area occupied by the metal ring is between 20% and 30%. So in this respect, the cost equivalent to each chip will increase by 20% to 30%. And because of the use of packaged chips, the cost is further increased.
现有技术中的第二种封装方式是,在制造谐振器的晶片上直接连接金属焊球,然后把此晶片通过金属球焊接在封装基板上,芯片上方覆盖密封隔离结构,比如膜状结构或者其他形式的隔离结构,来将内部结构和外界隔离,然后再覆盖塑封材料,得到最终的滤波器元件。 这种封装方式一方面避免了用于密封键合的金属环,缩小了芯片面积,另一方面也去掉了下方用于密封键合的晶片,进一步缩小了成本。另外,由于制造谐振器的晶片和封装基板直接连接,和下方封装的晶片的连接通孔也去掉了,因此这方面的金属损耗也消除了,所以整体插损也得到改善。The second packaging method in the prior art is to directly connect metal solder balls on the chip for manufacturing the resonator, and then solder the chip on the packaging substrate through the metal balls, and cover the top of the chip with a sealed isolation structure, such as a film structure or Other forms of isolation structure are used to isolate the internal structure from the outside, and then cover the plastic material to obtain the final filter element. On the one hand, this packaging method avoids the metal ring used for hermetic bonding and reduces the chip area. On the other hand, it also removes the wafer below for hermetic bonding, which further reduces the cost. In addition, since the chip for manufacturing the resonator is directly connected to the package substrate, and the connection through hole with the chip packaged below is also removed, the metal loss in this area is also eliminated, so the overall insertion loss is also improved.
在实现本发明的过程中,发明人发现,第二种封装方式得到的滤波器,无法利用第一种封装方式所产生的输入输出以及对地的电容和电感耦合,性能会受到影响。具体来说,由于输入输出之间的电容耦合无法通过金属环来形成,带外抑制尤其是右侧带外抑制会有比较大的恶化。In the process of implementing the present invention, the inventor found that the filter obtained by the second packaging method cannot use the input and output generated by the first packaging method and the capacitive and inductive coupling to the ground, and its performance will be affected. Specifically, since the capacitive coupling between input and output cannot be formed by a metal ring, the out-of-band suppression, especially the right-side out-of-band suppression, will be greatly deteriorated.
发明内容Summary of the invention
有鉴于此,本发明提出一种滤波器元件和多工器以及通信设备,在不采用下晶圆和密封环的情况下,能够改善滤波器通带右侧抑制。In view of this, the present invention proposes a filter element, multiplexer, and communication device, which can improve the right side suppression of the filter passband without using a lower wafer and a sealing ring.
为实现上述目的,根据本发明的一个方面,提供了一种滤波器元件。To achieve the above objective, according to one aspect of the present invention, a filter element is provided.
本发明的滤波器元件的滤波器版图中包含组成该滤波器的多个谐振器,以及包含输入管脚、输出管脚、一个或多个接地管脚;所述滤波器元件的封装基板包含输入管脚、输出管脚、一个或多个接地管脚;所述版图结构中还包含与所述接地管脚连接的金属连接线;所述金属连接线的一部分靠近输入管脚,另一部分靠近输出管脚,使所述滤波器的输入端和输出端之间形成耦合电容;并且/或者,所述封装基板的内部或表面还包含与所述接地管脚连接的金属连接线;所述金属连接线的一部分靠近输入管脚,另一部分靠近输出管脚,使所述滤波器的输入端和输出端之间形成耦合电容。The filter layout of the filter element of the present invention includes multiple resonators that make up the filter, and includes input pins, output pins, and one or more ground pins; the package substrate of the filter element includes input Pin, output pin, one or more ground pins; the layout structure also includes a metal connection line connected to the ground pin; a part of the metal connection line is close to the input pin, and the other part is close to the output Pin to form a coupling capacitor between the input end and the output end of the filter; and/or, the inside or surface of the package substrate further includes a metal connection wire connected to the ground pin; the metal connection A part of the wire is close to the input pin, and the other part is close to the output pin, so that a coupling capacitor is formed between the input end and the output end of the filter.
可选地,所述金属连接线沿所述版图的边缘布置,并且形成闭合的金属环或者形成不闭合的金属折线。Optionally, the metal connecting lines are arranged along the edges of the layout, and form a closed metal ring or an unclosed metal fold line.
可选地,所述金属连接线沿所述封装基板的边缘布置,并且形成闭合的金属环或者形成不闭合的金属折线;或者,所述金属连接线沿所述封装基板的中部布置,与接地管脚连接,并且形成不闭合的金属折线。Optionally, the metal connection lines are arranged along the edge of the package substrate, and form a closed metal ring or an unclosed metal fold line; or, the metal connection lines are arranged along the middle of the package substrate and are connected to the ground. The pins are connected and form a non-closed metal fold line.
可选地,所述金属连接线分布在所述多个谐振器所在的芯片的不同层。Optionally, the metal connecting wires are distributed on different layers of the chip where the multiple resonators are located.
可选地,所述金属连接线分布在所述封装基板的不同层。Optionally, the metal connecting wires are distributed on different layers of the packaging substrate.
可选地,所述耦合电容的电容值在0.5fF~5fF之间。Optionally, the capacitance value of the coupling capacitor is between 0.5 fF and 5 fF.
可选地,所述耦合电容的电容值在1fF~3fF之间。Optionally, the capacitance value of the coupling capacitor is between 1fF and 3fF.
可选地,滤波器晶片的管脚经由金属球连接到封装基板顶部的金属走线;滤波器晶片的上方及周边覆盖密封层。Optionally, the pins of the filter chip are connected to the metal traces on the top of the package substrate via metal balls; the upper and periphery of the filter chip are covered with a sealing layer.
根据本发明的第二方面,提供了一种多工器,包含本发明的滤波器元件。According to the second aspect of the present invention, there is provided a multiplexer including the filter element of the present invention.
根据本发明的第三方面,提供了一种通信设备,包含本发明的滤波器元件。According to a third aspect of the present invention, there is provided a communication device including the filter element of the present invention.
根据本发明的技术方案,在谐振器的版图或者在封装基板上通过特定的金属连线来形成所需的耦合,以此来移动对应的带外零点,从而有助于改善滤波器通带的右侧抑制。According to the technical solution of the present invention, the required coupling is formed on the layout of the resonator or on the package substrate through a specific metal connection, so as to move the corresponding out-of-band zero point, thereby helping to improve the passband of the filter. Right side inhibition.
附图说明Description of the drawings
为了说明而非限制的目的,现在将根据本发明的优选实施例、特别是参考附图来描述本发明,其中:For purposes of illustration and not limitation, the present invention will now be described according to preferred embodiments of the present invention, particularly with reference to the accompanying drawings, in which:
图1是根据现有技术的第一种封装方式的示意图;FIG. 1 is a schematic diagram of the first packaging method according to the prior art;
图2是根据现有技术的第二种封装方式的示意图;Fig. 2 is a schematic diagram of a second packaging method according to the prior art;
图3A和图3B分别是根据现有技术中的体声波滤波器的上晶圆和下晶圆的图形的示意图;3A and 3B are schematic diagrams of patterns of an upper wafer and a lower wafer of a bulk acoustic wave filter in the prior art, respectively;
图4是根据现有技术中的第二种封装方式的滤波器版图;Fig. 4 is a filter layout according to a second packaging method in the prior art;
图5A和图5B是根据现有技术的密封环产生电容的示意图;5A and 5B are schematic diagrams of generating capacitance according to the seal ring of the prior art;
图6A至图6D是本发明实施方式中,对现有技术中的滤波器的输入输出端之间的耦合进行电路分析的示意图;6A to 6D are schematic diagrams of performing circuit analysis on the coupling between the input and output ends of the filter in the prior art in the embodiment of the present invention;
图7是本发明实施方式中,对于密封环接地和不接地对带外抑制的影响进行分析的示意图;FIG. 7 is a schematic diagram of analyzing the influence of grounding and non-grounding of the seal ring on out-of-band suppression in the embodiment of the present invention;
图8A至图8F是根据本发明实施方式的谐振器版图上设置连接线以形成耦合电容的示意图;8A to 8F are schematic diagrams of connecting wires on the layout of the resonator according to an embodiment of the present invention to form a coupling capacitor;
图9是根据现有技术中的封装基板上的图形的示意图;FIG. 9 is a schematic diagram of a pattern on a packaging substrate according to the prior art;
图10A至图10F是根据本发明实施方式的在封装基板表面通过一段连接线形成耦合电容的示意图;10A to 10F are schematic diagrams of forming a coupling capacitor on the surface of a package substrate through a connecting line according to an embodiment of the present invention;
图10G至图10I是根据本发明实施方式的在封装基板中部通过一段连接线形成耦合电容的示意图;10G to 10I are schematic diagrams of forming a coupling capacitor in the middle of the package substrate through a section of connecting line according to an embodiment of the present invention;
图11A和图11B是根据本发明实施方式的增加输入输出之间的耦合电容对滤波器通常右侧抑制的改善的示意图;11A and 11B are schematic diagrams of improving the suppression of the filter on the right side by increasing the coupling capacitance between the input and output according to an embodiment of the present invention;
图12A和图12B是在图11A和图11B的基础上,增加耦合电容至4fF之后的效果;Figure 12A and Figure 12B are based on Figure 11A and Figure 11B, after increasing the coupling capacitance to 4fF;
图13是根据本发明实施方式的插入损耗对比的示意图。FIG. 13 is a schematic diagram of a comparison of insertion loss according to an embodiment of the present invention.
具体实施方式Detailed ways
本发明实施方式中,通过对右侧带外抑制恶化原因的分析,在谐振器的版图或者在封装基板上通过特定的金属连线来形成所需的耦合,以此来移动对应的带外零点,改善右侧抑制。In the embodiment of the present invention, through the analysis of the reasons for the degradation of the out-of-band suppression on the right side, the required coupling is formed on the layout of the resonator or on the package substrate through a specific metal connection, so as to move the corresponding out-of-band zero point ,Improve the inhibition of the right side.
以下先对上述两种封装方式作进一步说明。图1是根据现有技术的第一种封装方式的示意图。如图1所示,第一种封装方式采用晶圆 级封装,封装结构(Molding)中晶圆1(wafer1)作为上晶圆,制造谐振器和管脚(PAD),晶圆2(wafer2)作为下晶圆,上下两面制造管脚(PAD),在PAD的位置制造通孔,通过通孔把wafer1上的信号和地线连接出来。The above two packaging methods will be further explained below. Fig. 1 is a schematic diagram of the first packaging method according to the prior art. As shown in Figure 1, the first packaging method uses wafer-level packaging. In the packaging structure (Molding), wafer 1 (wafer1) is used as the upper wafer to manufacture resonators and pins (PAD), and wafer 2 (wafer2) As the lower wafer, pins (PAD) are made on the upper and lower sides, and through holes are made at the position of the PAD, and the signal and ground on wafer1 are connected through the through holes.
Wafer2下方的PAD通过锡球或其他金属球(bump)连接到封装基板(Laminate)的顶层金属走线(Top metal)上。Laminate可包括多层金属,中间有介质层,共同组成一个多层结构,各层金属层可进行无源器件的集成和提供部分管脚之间的连接。最终wafer1和wafer2通过金属键合密封之后,上面覆盖塑封胶来进行封装。塑封胶采用环氧树脂,或者用于改善功率容量或者性能以及降低成本的其他特殊封装材料。The PAD under Wafer2 is connected to the top metal trace of the package substrate (Laminate) through a solder ball or other metal balls (bump). Laminate can include multiple layers of metal with a dielectric layer in the middle to form a multilayer structure. The metal layers of each layer can integrate passive devices and provide connections between some pins. Finally, after wafer1 and wafer2 are sealed by metal bonding, they are covered with plastic encapsulant for packaging. The molding compound uses epoxy resin, or other special packaging materials used to improve power capacity or performance and reduce costs.
图2是根据现有技术的第二种封装方式的示意图。如图2所示,与第一种封装方式相比,第二种封装方式的主要区别就是下方的wafer2去除,制作有谐振器(Resonator)的wafer1上的PAD直接通过bump连接到封装基板(Laminate)的顶部金属走线(Top metal)上。因为要保证wafer1上的谐振器处于密封状态,避免外界环境的影响,所以需要在wafer1上方覆盖密封层Sealing layer来隔离内部谐振器和外部环境。最后在此结构上方覆盖塑封胶来进行封装。Fig. 2 is a schematic diagram of a second packaging method according to the prior art. As shown in Figure 2, compared with the first packaging method, the main difference of the second packaging method is that the wafer2 below is removed, and the PAD on the wafer1 with the resonator (Resonator) is directly connected to the package substrate (Laminate ) On the top metal trace (Top metal). Because it is necessary to ensure that the resonator on wafer1 is in a sealed state to avoid the influence of the external environment, it is necessary to cover the sealing layer above wafer1 to isolate the internal resonator from the external environment. Finally, plastic encapsulant is covered on the structure for encapsulation.
图3A和图3B分别是根据现有技术中的体声波滤波器的上晶圆和下晶圆的图形的示意图。图3A四周的区域sealring即是wafer1的金属密封环,密封环需要有一定的宽度以保证密封的可靠性,同时需要和内部谐振器有一定的距离,因此需要占据的面积较大,一般占整颗芯片(die)的20%~30%。图中S1~S4是串联谐振器,P1~P3是并联谐振器,串联和并联谐振器数量不受限制。图中各个谐振器之间的连接线被省略。图3B中四周的区域是wafer2的密封环,两片wafer通过晶圆级键合来键合到一起,以保证内部谐振器的密封性良好。同时在wafer2的PAD上会制造通孔,连接到wafer2的另外一侧,另外一侧同时也会 制造PAD,来和其他封装结构连接。3A and 3B are schematic diagrams of the patterns of the upper wafer and the lower wafer of the bulk acoustic wave filter in the prior art, respectively. The sealring around Figure 3A is the metal sealing ring of wafer1. The sealing ring needs to have a certain width to ensure the reliability of the seal. At the same time, it needs to have a certain distance from the internal resonator, so it needs to occupy a large area, which generally occupies the entire area. 20%-30% of a die. In the figure, S1 to S4 are series resonators, P1 to P3 are parallel resonators, and the number of series and parallel resonators is not limited. The connecting lines between the various resonators in the figure are omitted. The surrounding area in Figure 3B is the sealing ring of wafer2, and the two wafers are bonded together by wafer-level bonding to ensure good sealing of the internal resonator. At the same time, through holes will be made on the PAD of wafer2 and connected to the other side of wafer2, and the other side will also be made of PAD to connect with other package structures.
图4是根据现有技术中的第二种封装方式的滤波器版图。这种封装方式只采用wafer1,且wafer1上的金属密封环结构被去除,里面的输入管脚IN,输出管脚OUT和接地管脚G1,G2上方直接连接bump金属球,bump金属球连接到封装基板上。此种方式一方面去除了wafer2,另一方面去除了sealring,每片wafer制造的die数量更多,因此大大降低了成本;与此同时,因为wafer1和wafer2之间的连接通孔被去除了,这部分的金属损耗被消除,也会对插损有明显的改善。Fig. 4 is a layout of a filter according to a second packaging method in the prior art. This packaging method only uses wafer1, and the metal sealing ring structure on wafer1 is removed. The input pin IN, output pin OUT and ground pin G1, G2 are directly connected to the bump metal ball, and the bump metal ball is connected to the package. On the substrate. This method removes wafer2 on the one hand, and sealring on the other. There are more dies per wafer, which greatly reduces the cost; at the same time, because the connection vias between wafer1 and wafer2 are removed, This part of the metal loss is eliminated, and the insertion loss will also be significantly improved.
图5A和图5B是根据现有技术的密封环产生电容的示意图。如图5A和图5B所示,密封环Sealring与输入和输出的PAD(IN和OUT)有一定的距离,会产生电容C1和C2,从而形成耦合的效果。当sealring被去除,IN和OUT之间的耦合电容也被消除。Figures 5A and 5B are schematic diagrams of capacitance generated by a seal ring according to the prior art. As shown in Figure 5A and Figure 5B, the sealing ring Sealring has a certain distance from the input and output PADs (IN and OUT), which will generate capacitors C1 and C2, thereby forming a coupling effect. When the sealring is removed, the coupling capacitance between IN and OUT is also removed.
图6A至图6D是本发明实施方式中,对现有技术中的滤波器的输入输出端之间的耦合进行电路分析的示意图。图6A中,输入端和输出端(图中黑点所示,下同)之间存在电容耦合,对带外传输零点会有移动,改变滤波器带外抑制特性。图6B中,输入端输出端之间存在电容耦合,并且sealring作为一段传输线,具有方框内的电容及电感元件的效应。图6C中,sealring中某段区域接地,从而形成与地之间的电感。图6D中sealring中某段区域接地从而具有对地电感,同时考虑sealring作为一段传输线,具有方框内的电容及电感元件的效应。6A to 6D are schematic diagrams of performing circuit analysis on the coupling between the input and output ends of the filter in the prior art in the embodiment of the present invention. In Fig. 6A, there is capacitive coupling between the input end and the output end (shown by the black dots in the figure, the same below), and the out-of-band transmission zero point will move, which changes the out-of-band suppression characteristics of the filter. In FIG. 6B, there is capacitive coupling between the input and output ends, and the sealring, as a section of transmission line, has the effect of the capacitance and inductance elements in the box. In Figure 6C, a certain section of the sealring is grounded, thereby forming an inductance with the ground. In Fig. 6D, a certain section of the sealring is grounded to have ground inductance. At the same time, considering the sealring as a section of transmission line, it has the effect of the capacitance and inductance elements in the box.
图7是本发明实施方式中,对于密封环接地和不接地对带外抑制的影响进行分析的示意图。图7中的实线和虚线分别对应于接地和不接地。从图7可以看出,通过接地的调节可以改善带外抑制特性。FIG. 7 is a schematic diagram of analyzing the influence of grounding and non-grounding of the seal ring on out-of-band suppression in the embodiment of the present invention. The solid line and the dashed line in FIG. 7 correspond to grounding and non-grounding, respectively. It can be seen from Figure 7 that the out-of-band suppression characteristics can be improved by adjusting the grounding.
根据以上的分析,本发明实施方式中,滤波器元件采用第二种封装方式,并且用连接线形成电容。因为去除了sealring之后,输入输出 之间的耦合被消除了,滤波器带外抑制的右侧会恶化,因此需要额外形成输入输出之间的耦合电容,用来改善右侧带外抑制。连接线可以设置在谐振器版图上,或者封装基板,也可能二者兼具。Based on the above analysis, in the embodiment of the present invention, the filter element adopts the second packaging method, and a connecting wire is used to form a capacitor. Because after removing the sealring, the coupling between the input and the output is eliminated, and the right side of the filter out-of-band suppression will deteriorate. Therefore, an additional coupling capacitor between the input and output is needed to improve the right-side out-of-band suppression. The connecting wires can be arranged on the resonator layout, the package substrate, or both.
图8A至图8F是根据本发明实施方式的谐振器版图上设置连接线以形成耦合电容的示意图。如图8A至图8F所示,采用第二种封装方式时,wafer1上可以设置连接线8A至8F,各图中连接线8A至8F分别与接地管脚G1或G2连接,形成封闭的环形或者不封闭的折线。折线的形状和尺寸可以根据版图以及芯片边界的尺寸来改变。折线需要排布在芯片上输入管脚IN和输出管脚OUT之间,IN和OUT有一定的距离和包围长度,距离和包围长度决定了电容的大小。折线可在芯片内部不同层走线,需要尽量避开内部谐振器的图形,只在IN和OUT之间建立电学耦合关系。同时需要考虑芯片边缘的制造规则,尽量不增加芯片尺寸。8A to 8F are schematic diagrams of connecting wires on the layout of the resonator according to an embodiment of the present invention to form a coupling capacitor. As shown in Figures 8A to 8F, when the second packaging method is used, connecting wires 8A to 8F can be provided on wafer1, and the connecting wires 8A to 8F in each figure are respectively connected to ground pins G1 or G2 to form a closed ring or Unclosed polyline. The shape and size of the broken line can be changed according to the layout and the size of the chip boundary. The broken line needs to be arranged between the input pin IN and the output pin OUT on the chip. IN and OUT have a certain distance and enclosing length. The distance and enclosing length determine the size of the capacitor. The broken line can be routed on different layers inside the chip, and it is necessary to avoid the pattern of the internal resonator as much as possible, and only establish an electrical coupling relationship between IN and OUT. At the same time, it is necessary to consider the manufacturing rules of the chip edge, and try not to increase the chip size.
图9是根据现有技术中的封装基板(Laminate)上的图形的示意图。图9中部的圆形焊盘与接地管脚G1、G2连接,下方是封装基板中的通孔。图10A至图10I也有类似的圆形焊盘。图10A至图10F是根据本发明实施方式的在封装基板(Laminate)表面通过一段连接线(10A~10F)形成耦合电容的示意图。如图10至图10F所示,连接线可以是沿封装基板的边缘分布。图10G至图10I是根据本发明实施方式的在封装基板中部通过一段连接线(10G~10I)形成耦合电容的示意图。这里的中部不限定于封装基板的几何中心,而是相对于上述的沿封装基板边缘分布而言,在图10G至图10I中的连接线(10G~10I)不沿封装基板边缘分布,并且连接线在与接地管脚连接时,可以是直接与接地管脚连接,如图10H和图10I;也可以是如图10G所示,连接线与中间的圆形焊盘连接,该圆形焊盘与接地管脚不在同一层,因此其经过通孔连接至接地管脚。在去除sealring之后,根据本发明实施方式,在封装基板表面或内部形成走线,并且在封装基板中还可以分层分布,并可通过和G1、G2的耦合进一步增加设计的灵活性。连接线需要排布在基板 上输入管脚IN和输出管脚OUT之间,IN和OUT有一定的距离和包围长度,距离和包围长度决定了电容的大小。连接线可在基板内部不同层走线,需要尽量避开内部基板中的走线,只在IN和OUT之间建立电学耦合关系。同时需要考虑封装基板边缘的制造规则,尽量不增加基板尺寸。Fig. 9 is a schematic diagram of a pattern on a package substrate (Laminate) according to the prior art. The circular pad in the middle of FIG. 9 is connected to the ground pins G1 and G2, and the bottom is the through hole in the package substrate. Figures 10A to 10I also have similar circular pads. 10A to 10F are schematic diagrams of forming a coupling capacitor on the surface of a package substrate (Laminate) through a section of connecting lines (10A-10F) according to an embodiment of the present invention. As shown in FIGS. 10 to 10F, the connecting lines may be distributed along the edge of the package substrate. FIGS. 10G to 10I are schematic diagrams of forming a coupling capacitor through a section of connecting wires (10G to 10I) in the middle of the package substrate according to an embodiment of the present invention. The middle here is not limited to the geometric center of the package substrate, but relative to the above-mentioned distribution along the edge of the package substrate. When the wire is connected to the ground pin, it can be directly connected to the ground pin, as shown in Fig. 10H and Fig. 10I; or as shown in Fig. 10G, the connecting wire is connected to the middle circular pad. It is not on the same layer as the ground pin, so it is connected to the ground pin through a through hole. After the sealring is removed, according to the embodiment of the present invention, traces are formed on the surface or inside of the package substrate, and can also be distributed in layers in the package substrate, and the design flexibility can be further increased by coupling with G1 and G2. The connection line needs to be arranged on the substrate between the input pin IN and the output pin OUT. IN and OUT have a certain distance and enclosing length. The distance and enclosing length determine the size of the capacitor. The connecting wires can be routed on different layers inside the substrate, and it is necessary to avoid the wires in the inner substrate as much as possible, and only establish an electrical coupling relationship between IN and OUT. At the same time, it is necessary to consider the manufacturing rules of the edge of the package substrate, and try not to increase the size of the substrate.
图11A和图11B是根据本发明实施方式的增加输入输出之间的耦合电容对滤波器通常右侧抑制的改善的示意图。在去除sealring之后,图中实线对应于增加耦合电容,虚线对应于未增加耦合电容。图11A表示邻带的抑制,图11B表示远带的抑制。从图中可以看出,通过耦合电容的加入,右侧2.52GHz附近的传输零点移动到2.54GHz附近,从而保证在2.54GHz以上的抑制都有改善。此区域的频段有B7发射端频率(2.5GHz~2.57GHz),B41(2.496GHz~2.69GHz)。对于远带抑制,几乎没有影响。上图中形成的电容约为2fF(飞法)。11A and 11B are schematic diagrams of improving the suppression of the filter on the right side by increasing the coupling capacitance between the input and output according to an embodiment of the present invention. After removing the sealring, the solid line in the figure corresponds to increasing the coupling capacitance, and the dashed line corresponds to not increasing the coupling capacitance. Fig. 11A shows the suppression of the adjacent zone, and Fig. 11B shows the suppression of the far zone. It can be seen from the figure that through the addition of the coupling capacitor, the transmission zero point near 2.52GHz on the right moves to near 2.54GHz, so as to ensure that the suppression above 2.54GHz is improved. The frequency bands in this area have B7 transmitter frequency (2.5GHz~2.57GHz), B41 (2.496GHz~2.69GHz). For far band suppression, there is almost no effect. The capacitance formed in the above figure is about 2fF (Flying method).
图12A和图12B是在图11A和图11B的基础上,增加耦合电容至4fF之后的效果。从图12A和图12B中可以看出,虽然右侧抑制进一步改善,并且远带抑制(可参见图12B)也有改善,但左侧抑制有所恶化,因此上述的耦合电容需要在一定区间内。此区间可限定在0.5fF~5fF之间,更进一步的,可限定在1fF~3fF之间。Figures 12A and 12B are based on Figures 11A and 11B, after increasing the coupling capacitance to 4fF. It can be seen from FIG. 12A and FIG. 12B that although the right side suppression is further improved, and the far-band suppression (see FIG. 12B) is also improved, the left side suppression has deteriorated, so the aforementioned coupling capacitor needs to be within a certain range. This interval can be limited to 0.5fF to 5fF, and further, it can be limited to 1fF to 3fF.
此外,因为不采用wafer2,所以相应也不存在用于连接wafer1和wafer2的通孔,这样金属电阻损耗减小,从而插损得以改善。如图13所示,图13是根据本发明实施方式的插入损耗对比的示意图,其中实线对应于本发明实施方式,虚线对应于存在wafer2时,wafer1和wafer2之间具有连接通孔的情形。从图13中可以看出采用本发明实施方式的技术方案,滤波器的插损有0.1dB以上的改善。In addition, because wafer2 is not used, there is no through hole for connecting wafer1 and wafer2, so the metal resistance loss is reduced, and the insertion loss is improved. As shown in FIG. 13, FIG. 13 is a schematic diagram of insertion loss comparison according to an embodiment of the present invention, in which the solid line corresponds to the embodiment of the present invention, and the dotted line corresponds to a situation where wafer1 and wafer2 are connected through holes when wafer2 is present. It can be seen from FIG. 13 that with the technical solution of the embodiment of the present invention, the insertion loss of the filter is improved by more than 0.1 dB.
上述具体实施方式,并不构成对本发明保护范围的限制。本领域技术人员应该明白的是,取决于设计要求和其他因素,可以发生各种 各样的修改、组合、子组合和替代。任何在本发明的精神和原则之内所作的修改、等同替换和改进等,均应包含在本发明保护范围之内。The foregoing specific implementations do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that, depending on design requirements and other factors, various modifications, combinations, sub-combinations, and substitutions can occur. Any modification, equivalent replacement and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

  1. 一种滤波器元件,A filter element,
    所述滤波器元件的滤波器版图中包含组成该滤波器的多个谐振器,以及包含输入管脚、输出管脚、一个或多个接地管脚;The filter layout of the filter element includes multiple resonators that make up the filter, and includes input pins, output pins, and one or more ground pins;
    所述滤波器元件的封装基板包含输入管脚、输出管脚、一个或多个接地管脚;The packaging substrate of the filter element includes input pins, output pins, and one or more ground pins;
    其特征在于,It is characterized by
    所述版图结构中还包含与所述接地管脚连接的金属连接线;所述金属连接线的一部分靠近输入管脚,另一部分靠近输出管脚,使所述滤波器的输入端和输出端之间形成耦合电容;The layout structure also includes a metal connection line connected to the ground pin; a part of the metal connection line is close to the input pin, and the other part is close to the output pin, so that the input end and the output end of the filter are different from each other. Form a coupling capacitor between;
    并且/或者,And/or,
    所述封装基板的内部或表面还包含与所述接地管脚连接的金属连接线;所述金属连接线的一部分靠近输入管脚,另一部分靠近输出管脚,使所述滤波器的输入端和输出端之间形成耦合电容。The inside or surface of the package substrate also includes a metal connection wire connected to the ground pin; a part of the metal connection wire is close to the input pin, and the other part is close to the output pin, so that the input end of the filter is connected to the ground pin. A coupling capacitor is formed between the output terminals.
  2. 根据权利要求1所述的滤波器元件,其特征在于,The filter element according to claim 1, wherein:
    所述金属连接线沿所述版图的边缘布置,并且形成闭合的金属环或者形成不闭合的金属折线。The metal connecting lines are arranged along the edges of the layout and form a closed metal ring or an unclosed metal fold line.
  3. 根据权利要求1所述的滤波器元件,其特征在于,The filter element according to claim 1, wherein:
    所述金属连接线沿所述封装基板的边缘布置,并且形成闭合的金属环或者形成不闭合的金属折线;The metal connecting lines are arranged along the edge of the packaging substrate, and form a closed metal ring or an unclosed metal fold line;
    或者,所述金属连接线沿所述封装基板的中部布置,与接地管脚连接,并且形成不闭合的金属折线。Alternatively, the metal connection line is arranged along the middle of the package substrate, connected to the ground pin, and forms an unclosed metal fold line.
  4. 根据权利要求1所述的滤波器元件,其特征在于,The filter element according to claim 1, wherein:
    所述金属连接线分布在所述多个谐振器所在的芯片的不同层。The metal connecting lines are distributed on different layers of the chip where the multiple resonators are located.
  5. 根据权利要求1所述的滤波器元件,其特征在于,The filter element according to claim 1, wherein:
    所述金属连接线分布在所述封装基板的不同层。The metal connecting wires are distributed on different layers of the packaging substrate.
  6. 根据权利要求1所述的滤波器元件,其特征在于,The filter element according to claim 1, wherein:
    所述耦合电容的电容值在0.5fF~5fF之间。The capacitance value of the coupling capacitor is between 0.5 fF and 5 fF.
  7. 根据权利要求6所述的滤波器元件,其特征在于,The filter element according to claim 6, wherein:
    所述耦合电容的电容值在1fF~3fF之间。The capacitance value of the coupling capacitor is between 1fF and 3fF.
  8. 根据权利要求1至7中任一项所述的滤波器元件,其特征在于,The filter element according to any one of claims 1 to 7, characterized in that:
    滤波器晶片的管脚经由金属球连接到封装基板顶部的金属走线;The pins of the filter chip are connected to the metal traces on the top of the package substrate via metal balls;
    滤波器晶片的上方及周边覆盖密封层。The upper and periphery of the filter wafer are covered with a sealing layer.
  9. 一种多工器,其特征在于,包含权利要求1至8中任一项所述的滤波器元件。A multiplexer, characterized by comprising the filter element according to any one of claims 1 to 8.
  10. 一种通信设备,其特征在于,包含权利要求1至8中任一项所述的滤波器元件。A communication device, characterized by comprising the filter element according to any one of claims 1 to 8.
PCT/CN2021/088256 2020-04-20 2021-04-20 Filter element, multiplexer, and communication device WO2021213349A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010309294.1A CN111464148B (en) 2020-04-20 2020-04-20 Filter element, multiplexer, and communication device
CN202010309294.1 2020-04-20

Publications (1)

Publication Number Publication Date
WO2021213349A1 true WO2021213349A1 (en) 2021-10-28

Family

ID=71680700

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2021/088256 WO2021213349A1 (en) 2020-04-20 2021-04-20 Filter element, multiplexer, and communication device

Country Status (2)

Country Link
CN (1) CN111464148B (en)
WO (1) WO2021213349A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111464148B (en) * 2020-04-20 2021-08-10 诺思(天津)微系统有限责任公司 Filter element, multiplexer, and communication device
CN113411069A (en) * 2021-06-03 2021-09-17 成都频岢微电子有限公司 Bulk acoustic wave filter device and method for improving out-of-band rejection
CN115021711B (en) * 2022-07-20 2022-11-18 苏州汉天下电子有限公司 Semiconductor device, communication equipment and manufacturing method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2838145Y (en) * 2005-09-13 2006-11-15 浙江嘉康电子股份有限公司 Piezoelectric filter
CN101103526A (en) * 2005-01-20 2008-01-09 Tdk股份有限公司 Filters with improved rejection band performance
JP2011146768A (en) * 2010-01-12 2011-07-28 Panasonic Corp Ladder type elastic wave filter and antenna duplexer using the same
CN109831174A (en) * 2018-11-28 2019-05-31 天津大学 A kind of duplexer
CN111464148A (en) * 2020-04-20 2020-07-28 诺思(天津)微系统有限责任公司 Filter element, multiplexer, and communication device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112280A (en) * 1997-10-03 1999-04-23 Murata Mfg Co Ltd Electronic component and ladder filter
JP2003158437A (en) * 2001-09-06 2003-05-30 Murata Mfg Co Ltd Lc filter circuit, laminate type lc filter, multiplexer, and radio communication device
US20070120627A1 (en) * 2005-11-28 2007-05-31 Kundu Arun C Bandpass filter with multiple attenuation poles
US7649431B2 (en) * 2006-10-27 2010-01-19 Samsung Electro-Mechanics Co., Ltd. Band pass filter

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101103526A (en) * 2005-01-20 2008-01-09 Tdk股份有限公司 Filters with improved rejection band performance
CN2838145Y (en) * 2005-09-13 2006-11-15 浙江嘉康电子股份有限公司 Piezoelectric filter
JP2011146768A (en) * 2010-01-12 2011-07-28 Panasonic Corp Ladder type elastic wave filter and antenna duplexer using the same
CN109831174A (en) * 2018-11-28 2019-05-31 天津大学 A kind of duplexer
CN111464148A (en) * 2020-04-20 2020-07-28 诺思(天津)微系统有限责任公司 Filter element, multiplexer, and communication device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MIKEL SANZ; WITLEF WIECZOREK; SIMON GR\"OBLACHER; ENRIQUE SOLANO: "Electro-mechanical Casimir effect", ARXIV.ORG, CORNELL UNIVERSITY LIBRARY, 201 OLIN LIBRARY CORNELL UNIVERSITY ITHACA, NY 14853, 21 December 2017 (2017-12-21), 201 Olin Library Cornell University Ithaca, NY 14853 , XP081411056, DOI: 10.22331/q-2018-09-03-91 *

Also Published As

Publication number Publication date
CN111464148B (en) 2021-08-10
CN111464148A (en) 2020-07-28

Similar Documents

Publication Publication Date Title
WO2021213349A1 (en) Filter element, multiplexer, and communication device
WO2021159880A1 (en) Bulk acoustic wave filter, multiplexer, and electronic device
KR102436686B1 (en) Embedded rf filter package structure and method of manufacturing thereof
US6218729B1 (en) Apparatus and method for an integrated circuit having high Q reactive components
KR100817070B1 (en) Multi-ground shielding semiconductor package, method of fabricating the same package, and method of preventing noise using the same ground shield
EP1553700B1 (en) Surface acoustic wave device
US8405472B2 (en) Elastic wave filter device
JPH10126213A (en) Branching filter package
KR100835061B1 (en) A semiconductor chip package
KR20080057190A (en) 3d electronic packaging structure with enhanced grounding performance and embedded antenna
WO2021238971A1 (en) Semiconductor chip, multiplexer, and communication device
US9713259B2 (en) Communication module
US7436273B2 (en) Surface acoustic wave device and method for manufacturing the same
TWI435422B (en) Semiconductor device having wafer level chip scale packaging substrate decoupling
US7501915B2 (en) High frequency module
TW202033004A (en) Microphone package structure
WO2009001312A2 (en) Packaged device for common mode filtering and esd protection
TWI672840B (en) Electronic package and substrate structure and the manufacture thereof
JP6215577B2 (en) Semiconductor package container, semiconductor device, electronic equipment
CN106356363B (en) Semiconductor devices and semiconductor system
TWI660466B (en) Package structure and method of manufacture thereof
JP5895374B2 (en) Electronic components
CN117559938A (en) Duplexer, multiplexer and communication equipment
KR20090016836A (en) A surface acoustic wave package and fabrication method thereof
CN117559954A (en) Filter, duplexer, multiplexer and communication equipment

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 21792574

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205 DATED 14.02.2023.)

122 Ep: pct application non-entry in european phase

Ref document number: 21792574

Country of ref document: EP

Kind code of ref document: A1