WO2021196687A1 - Multi-component-based electric field probe and magnetic field probe calibration system and method - Google Patents

Multi-component-based electric field probe and magnetic field probe calibration system and method Download PDF

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WO2021196687A1
WO2021196687A1 PCT/CN2020/133072 CN2020133072W WO2021196687A1 WO 2021196687 A1 WO2021196687 A1 WO 2021196687A1 CN 2020133072 W CN2020133072 W CN 2020133072W WO 2021196687 A1 WO2021196687 A1 WO 2021196687A1
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probe
calibration
magnetic field
electric field
measured
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PCT/CN2020/133072
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French (fr)
Chinese (zh)
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魏兴昌
张力
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浙江大学
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Priority to US17/355,193 priority Critical patent/US20210318404A1/en
Publication of WO2021196687A1 publication Critical patent/WO2021196687A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08Measuring electromagnetic field characteristics
    • G01R29/0864Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878Sensors; antennas; probes; detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12Measuring electrostatic fields or voltage-potential
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/005Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references

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  • the invention relates to the technical field of probe calibration and measurement, in particular to a multi-component-based electric field probe and magnetic field probe calibration system and method.
  • Electric field probes and magnetic field probes are used to detect unknown electromagnetic interference sources or near-field radiation from antennas. In order to accurately and quantitatively analyze the amount of radiation, it is necessary to know the proportional coefficient between the output voltage of the electric field probe and the magnetic field probe and the electric field and magnetic field to be measured. This coefficient is defined as the probe factor (PF).
  • the International Standards Organization IEC stipulates that a single standard microstrip line is used as the calibration component. First, the electromagnetic full-wave software is used to simulate the electric and magnetic fields above the calibration component, and then the probe is used to measure the calibration component at the same position.
  • the calibration factor is defined as the magnetic field probe/ The ratio of the output voltage of the electric field probe to the simulated magnetic field value/electric field value.
  • the standard microstrip line works, one port is excitation, and the other port is a 50 ohm matched load. It is considered that the field generated during its work is the field of standard transverse electromagnetic waves.
  • the magnetic field probe is calibrated, place the magnetic field probe above the center of the standard microstrip line, and the opening of the magnetic field probe is parallel to the current direction of the microstrip line.
  • the coupling of the magnetic field has nothing to do with the electric field generated by the microstrip line.
  • the current calibration method of single microstrip line, to calculate the calibration factor of a specific type of probe often only considers the coupling between the probe and the main component of the field to be measured.
  • a magnetic field probe when it is working, it will also be coupled to the electric field in space, and the coupled space electric field will contribute part of the output of the magnetic field probe, which is equivalent to the environmental noise of the probe.
  • the current calibration method ignores the coupling of the space electric field when calculating PF.
  • the coupling of the spatial magnetic field or the environmental noise generated by the spatial magnetic field at the output of the probe are usually ignored, which affects the accuracy of the calibration. Therefore, it is necessary to provide a probe calibration method that takes into account the coupling of the magnetic field and the electric field, to improve the calibration accuracy of the electric field probe and the magnetic field probe, and to evaluate the probe's ability to suppress environmental noise.
  • the present invention provides a multi-component-based electric field probe and magnetic field probe calibration system and method, which can be applied to the calibration of electric field probes and magnetic field probes.
  • the coupling of the magnetic field to the magnetic field probe and the coupling of the electric field to the magnetic field probe are separately expressed, so as to accurately obtain the coupling capability of the magnetic field probe to be measured and the degree of inhibition of the magnetic field probe to the non-measured electric field component;
  • the electric field probe The coupling of the electric field to the electric field probe and the coupling of the magnetic field to the electric field probe are separately expressed, so as to accurately obtain the coupling ability of the electric field probe to the electric field to be measured and the suppression degree of the electric field probe to the non-measured magnetic field.
  • the invention extracts the coupling coefficients of the external electric field and magnetic field components and the electric field probe and the magnetic field probe respectively, and obtains a more comprehensive and accurate calibration factor of the electric field probe and the magnetic field probe.
  • a multi-component-based electric field probe and magnetic field probe calibration system including microstrip line calibration components, fixtures, vector network analyzers and data processing units;
  • the microstrip line calibration component includes a first group of microstrip lines and a second group of microstrip lines, the two groups of microstrip lines are distributed on different wiring layers of the same PCB board or distributed on an independent PCB board; One end of the first group of microstrip lines is connected with a first matching load, and the other end of the first group of microstrip lines is a first excitation port; one end of the second group of microstrip lines is connected with a second matching load, The other end of the two sets of microstrip lines is the second excitation port; the first set of microstrip lines and the second set of microstrip lines are perpendicular to each other, and the calibration point is 1mm directly above the vertical crossing point, which is fixedly installed on the The calibrated probe on the fixture is perpendicular to the PCB board and the detection center of the calibrated probe coincides with the calibration point;
  • the vector network analyzer is respectively connected to the first excitation port on the first group of microstrip lines, the second excitation port on the second group of microstrip lines, and the output port of the probe to be schooled;
  • the data processing unit is used to calculate the calibration factor of the calibrated field probe at each calibration frequency point.
  • the first group of microstrip lines adopts a single microstrip line or a differential line under common mode excitation to generate the magnetic field component Hy ;
  • the second group of microstrip lines adopts a differential line under differential mode excitation.
  • the differential line is used to generate the electric field component E x .
  • the calculation formulas of the calibration factors ⁇ and ⁇ are:
  • is the calibration factor of the probe to be measured magnetic field
  • is the coupling degree of the probe to the non-measured electric field
  • is the coupling degree of the probe to the non-measured magnetic field
  • is the probe's electric field to be measured.
  • Calibration factor Respectively indicate the magnetic field strength and electric field strength of the calibration point when 1W excitation power is applied to the first excitation port; with Respectively represent the magnetic field strength and electric field strength of the calibration point when 1W excitation power is applied to the second excitation port
  • S 13 and S 23 are the scattering parameters measured by the vector network analyzer
  • Z 3 is the impedance of the probe terminal connection (usually 50 ohms).
  • the invention also discloses a calibration method based on the above-mentioned electric field probe and magnetic field probe calibration system, the steps are as follows:
  • step 1) For the microstrip line calibration component prepared according to step 1), apply 1W excitation power at the first excitation port on the first set of microstrip lines to obtain the magnetic field strength of the calibration point And electric field strength Similarly, apply 1W excitation power at the second excitation port on the second set of microstrip lines to obtain the magnetic field strength at the calibration point And electric field strength Bundle As the reference value of the electromagnetic field generated by the microstrip calibration component;
  • is the calibration factor of the probe to be measured, and ⁇ is the coupling degree of the probe to the non-measured electric field;
  • is the coupling degree of the probe to the non-measured magnetic field, and ⁇ is the probe's electric field to be measured.
  • the calibration system of the present invention uses two sets of microstrip lines, which can generate a main magnetic field component and a main electric field component perpendicular to each other in the horizontal plane; use the magnetic field and the electric field component to test the response of the electric field probe and the magnetic field probe to calibrate the probe, Two coupling coefficients are obtained.
  • the coupling capability (or sensitivity of the magnetic field probe) of the magnetic field probe to be measured can be comprehensively and accurately measured.
  • the ability to suppress the electric field that is not under test for the electric field probe, not only the coupling of the external electric field to the electric field probe is considered, but also the coupling of the external magnetic field to the electric field probe is further calculated, so that the coupling capability (or sensitivity) of the electric field probe to be measured can be comprehensively and accurately measured. The ability to suppress the magnetic field to be measured.
  • This method makes up for the limitation that the current single magnetic field component or single electric field component can only measure the coupling degree of the field to be measured by the probe, and can comprehensively measure the suppression degree of the electric field probe to the non-measured magnetic field and the magnetic field probe to the non-measured electric field.
  • Figure 1 is a schematic diagram of the calibration system of the present invention
  • FIG. 2 is a schematic diagram of a microstrip line calibration assembly in an embodiment of the present invention, in which two sets of microstrip lines are distributed on the same PCB board, are located on different wiring layers of the PCB and are perpendicular to each other;
  • Figure 3 (a) is a schematic diagram of the first set of microstrip line calibration in an embodiment of the present invention.
  • Figure 3(b) is a schematic diagram of the second set of microstrip line calibration in an embodiment of the present invention.
  • Fig. 4 is a comparison between the coupling coefficient of the present invention and the existing magnetic field calibration coefficient.
  • a calibration system for electric and magnetic field probes based on multi-components The calibration diagram is shown in Figure 1. It includes a microstrip calibration component, a fixture, a vector network analyzer, and a data processing unit. The calibration factor of the calibrated field probe at the calibration frequency point.
  • the microstrip line calibration component includes a first set of microstrip lines and a second set of microstrip lines.
  • the two sets of microstrip lines can be distributed on different wiring layers of the same PCB board, as shown in Figure 2, or on a separate PCB board, as shown in Figure 3.
  • the first group of microstrip lines is a single microstrip line.
  • the strip line or the differential line under common mode excitation is used to generate the magnetic field component Hy
  • the second group of microstrip lines are the differential line under the differential mode excitation, used to generate the electric field component E x ;
  • the first group of microstrip lines One end of the line is connected to the first matching load, and the other end of the first group of microstrip lines is the first excitation port;
  • one end of the second group of microstrip lines is connected to the second matching load, and the second group of microstrip lines is The other end is the second excitation port;
  • the first group of microstrip lines and the second group of microstrip lines are distributed/placed perpendicular to each other, and the calibration point is 1mm directly above the vertical intersection point, which is fixedly installed on the calibrated field on the fixture
  • the probe is perpendicular to the PCB board and the detection center of the calibrated field probe coincides with the calibration point.
  • microstrip line calibration component is shown in Figure 2 (two sets of microstrip lines are on different wiring layers of the same PCB board) or Figure 3 (two sets of microstrip lines are on different PCB boards) .
  • the first group of microstrip lines single, matched microstrip lines (as shown in Figure 1) or common mode excitation and matched differential lines (as shown in Figures 2 and 3), distributed along the x direction, and The main magnetic field component generated above is Hy .
  • One end of the microstrip line is connected to a matched load, and the other end is defined as excitation port 1 (for a single microstrip line, add excitation between the microstrip line and the ground plane; for a differential line, add an excitation between the two wires in parallel and the ground plane excitation).
  • the second group of microstrip lines is differential mode excitation and matching differential lines, distributed along the y direction.
  • differential mode excitation adding excitation between two wires
  • the main electric field component generated above it is E x .
  • One end of the differential microstrip line is connected to a matched load, and the other end is defined as the excitation port 2.
  • the calibration point is defined as 1mm directly above the intersection of the center lines of the two sets of microstrip lines. According to 1) -2) is disposed at the calibration point can be within the electromagnetic field components in two mutually perpendicular horizontal plane: E x and H y.
  • the calibration probe is placed above the microstrip line through the fixture during calibration, and only needs to be measured once with a vector network analyzer; for the calibration components shown in Figure 3
  • Two sets of microstrip line calibration components are distributed on different PCB boards.
  • the field probes are placed above the two sets of microstrip lines. Keep the probe position unchanged.
  • the detection center of the probe coincides with the calibration point, as shown in Figure 1, Figure 2, and Figure 3.
  • the output terminal of the probe is defined as port 3.
  • the vector network analyzer is connected to port 1, port 2, and the output port 3 of the field probe to be calibrated, and the internal signal source of the vector network analyzer outputs excitations of different calibration frequencies. Signal.
  • the S-parameter scattering matrix of the 3-port network is measured by a vector network analyzer, and the following model is established:
  • a 1 to a 3 and b 1 to b 3 are the incident waves and reflected waves at the three ports, respectively.
  • V 3 is the voltage when port 3 is connected to impedance Z 3
  • Z 1 and Z 2 are the reference impedances of ports 1 and 2, respectively.
  • V 3 ⁇ H y + ⁇ E x (4)
  • is the calibration factor of the probe to be measured, and ⁇ is the coupling degree of the probe to the non-measured electric field; for the electric field probe, ⁇ is the coupling degree of the probe to the non-measured magnetic field, and ⁇ is the probe's electric field to be measured.
  • the calibration factor In formula (4), both the main horizontal electric and magnetic field components generated by the microstrip line calibration component are considered, as well as the secondary horizontal electric and magnetic field components.
  • Formula is the calculation formula of the coupling coefficient finally obtained.
  • ⁇ and ⁇ are the calculated calibration factors or coupling coefficients. Both ⁇ and ⁇ vary with frequency.
  • Fig. 4 is a calculation result of the calibration factor of a magnetic field probe for measuring a magnetic field Hy by the present invention when the calibration microstrip line shown in Fig. 3 is used.
  • "existing magnetic field calibration coefficient 1" refers to the magnetic field coupling factor obtained by the existing calibration method when the first group of microstrip lines in Figure 3(a) is used as the calibration component
  • “existing magnetic field calibration coefficient 2” refers to When the second set of microstrip lines in Fig. 3(b) are used as calibration parts, the magnetic field coupling factor obtained by the existing calibration method.
  • the main difference between the existing calibration method and the calibration method of the present invention is that the existing calibration method only uses a set of microstrip lines as calibration components. It can be seen from the figure:

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Abstract

A multi-component-based electric field probe and magnetic field probe calibration system and method. Said calibration system comprises a microstrip line calibration assembly, a clamp, a vector network analyzer and a data processing unit; two groups of microstrip lines contained in the microstrip line calibration assembly can be distributed on different wiring layers of the same PCB, and can also be distributed on an independent PCB; a first group of microstrip lines consists of single microstrip lines or differential lines under common-mode excitation, and is used for generating a main component Hy of a magnetic field, and the second group of microstrip lines consists of differential lines under differential-mode excitation, and is used for generating a main component Ex of an electric field. Said calibration system uses two groups of microstrip lines to respectively generate a horizontal magnetic field component and a horizontal electric field component to measure the coupling degree of an electromagnetic field probe to an external electric field and magnetic field; furthermore, a calculation formula of a calibration factor is proposed, so that the limitation that only the coupling degree of a probe to a field to be measured can be measured by using a single magnetic field component or a single electric field component currently is overcome, and the coupling degree of the electric field probe to a magnetic field not to be measured and the coupling degree of the magnetic field probe to an electric field not to be measured can be fully measured.

Description

一种基于多分量的电场探头和磁场探头校准系统及方法Multi-component-based electric field probe and magnetic field probe calibration system and method 技术领域Technical field
本发明涉及探头校准测量技术领域,尤其涉及一种基于多分量的电场探头和磁场探头校准系统及方法。The invention relates to the technical field of probe calibration and measurement, in particular to a multi-component-based electric field probe and magnetic field probe calibration system and method.
背景技术Background technique
电场探头和磁场探头用于检测未知电磁干扰源或者天线的近场辐射。为了精确定量分析辐射量,需要知道电场探头、磁场探头的输出电压与待测电场、磁场的比例系数,这个系数定义为探头的校准因子(Probe Factor,PF)。国际标准组织IEC规定采用单根标准微带线作为校准件,先用电磁全波软件仿真得到校准件上方的电、磁场,再用探头在同一位置测量校准件,校准因子即定义为磁场探头/电场探头输出电压与仿真得到的磁场值/电场值的比值。Electric field probes and magnetic field probes are used to detect unknown electromagnetic interference sources or near-field radiation from antennas. In order to accurately and quantitatively analyze the amount of radiation, it is necessary to know the proportional coefficient between the output voltage of the electric field probe and the magnetic field probe and the electric field and magnetic field to be measured. This coefficient is defined as the probe factor (PF). The International Standards Organization IEC stipulates that a single standard microstrip line is used as the calibration component. First, the electromagnetic full-wave software is used to simulate the electric and magnetic fields above the calibration component, and then the probe is used to measure the calibration component at the same position. The calibration factor is defined as the magnetic field probe/ The ratio of the output voltage of the electric field probe to the simulated magnetic field value/electric field value.
标准微带线工作时其一个端口为激励,另一端口为50欧姆的匹配负载。认为其工作时产生的场为标准横电磁波的场。磁场探头进行校准时,将磁场探头放置于标准微带线中心上方,磁场探头的开口平行于微带线的电流方向,认为此时磁场探头的输出只取决于磁场探头与标准微带线辐射的磁场的耦合,与微带线产生的电场无关。目前单微带线的校准方法,计算特定类型探头的校准因子,往往只考虑探头与主要待测场分量的耦合,比如,在对磁场探头进行校准时,只考虑某一方向上待测磁场的幅度(比如H y)与磁场探头输出电压的比值。同理,在对电场探头进行校准时,只考虑某一方向上待测电场的幅度(比如E c)与电场探头输出的比值,这样只能知道磁场探头对待测磁场的耦合能力,或者电场探头对待测电场的耦合能力。 When the standard microstrip line works, one port is excitation, and the other port is a 50 ohm matched load. It is considered that the field generated during its work is the field of standard transverse electromagnetic waves. When the magnetic field probe is calibrated, place the magnetic field probe above the center of the standard microstrip line, and the opening of the magnetic field probe is parallel to the current direction of the microstrip line. The coupling of the magnetic field has nothing to do with the electric field generated by the microstrip line. The current calibration method of single microstrip line, to calculate the calibration factor of a specific type of probe, often only considers the coupling between the probe and the main component of the field to be measured. For example, when calibrating a magnetic field probe, only the amplitude of the magnetic field to be measured in a certain direction is considered (Such as Hy ) and the ratio of the output voltage of the magnetic field probe. In the same way, when calibrating the electric field probe, only consider the ratio of the amplitude of the electric field to be measured in a certain direction (such as E c ) to the output of the electric field probe. In this way, only the coupling capability of the magnetic field probe to be measured can be known, or the treatment of the electric field probe The coupling ability of measuring electric field.
对于磁场探头,其在工作时,也会耦合到空间上的电场,耦合到的空间电场会对磁场探头输出有一部分的贡献,等同于探头的环境噪声。目前的校准方法在计算PF时,忽略了空间电场的耦合。同理,对于电场探头,通常也忽略了空间磁场的耦合或者空间磁场在探头输出端产生的环境噪声,影响到了校准的准确性。因此需要提供一种同时考虑到磁场和电场耦合的探头校准方法,提高对电场探头和磁场探头的校准精度,并用以评估探头对环境噪声的抑制能力。For a magnetic field probe, when it is working, it will also be coupled to the electric field in space, and the coupled space electric field will contribute part of the output of the magnetic field probe, which is equivalent to the environmental noise of the probe. The current calibration method ignores the coupling of the space electric field when calculating PF. In the same way, for electric field probes, the coupling of the spatial magnetic field or the environmental noise generated by the spatial magnetic field at the output of the probe are usually ignored, which affects the accuracy of the calibration. Therefore, it is necessary to provide a probe calibration method that takes into account the coupling of the magnetic field and the electric field, to improve the calibration accuracy of the electric field probe and the magnetic field probe, and to evaluate the probe's ability to suppress environmental noise.
发明内容Summary of the invention
为了克服现有技术的不足,本发明提供一种基于多分量的电场探头和磁场探头校准系统及方法,可应用于电场探头和磁场探头的校准。对于磁场探头,将磁场对磁场探头的耦合与电场对磁场探头的耦合分别表示出来,从而准确地得到磁场探头对待测磁场的耦合能力以及磁场探头对非待测电场分量的抑制度;对于电场探头,将电场对电场探头的耦合与磁场对电场探头的耦合分别表示出来,从而准确地得到电场探头对待测电场的耦合能力以及电场探头对非待测磁场的抑制度。本发明将外部电场、磁场分量与电场探头和磁场探头的耦合系数分别提取出来,得到电场探头和磁场探头更全面、精确的校准因子。In order to overcome the shortcomings of the prior art, the present invention provides a multi-component-based electric field probe and magnetic field probe calibration system and method, which can be applied to the calibration of electric field probes and magnetic field probes. For the magnetic field probe, the coupling of the magnetic field to the magnetic field probe and the coupling of the electric field to the magnetic field probe are separately expressed, so as to accurately obtain the coupling capability of the magnetic field probe to be measured and the degree of inhibition of the magnetic field probe to the non-measured electric field component; for the electric field probe , The coupling of the electric field to the electric field probe and the coupling of the magnetic field to the electric field probe are separately expressed, so as to accurately obtain the coupling ability of the electric field probe to the electric field to be measured and the suppression degree of the electric field probe to the non-measured magnetic field. The invention extracts the coupling coefficients of the external electric field and magnetic field components and the electric field probe and the magnetic field probe respectively, and obtains a more comprehensive and accurate calibration factor of the electric field probe and the magnetic field probe.
为了实现上述目的,本发明采用如下技术方案:In order to achieve the above objectives, the present invention adopts the following technical solutions:
一种基于多分量的电场探头和磁场探头校准系统,包括微带线校准组件、夹具、矢量网络分析仪和数据处理单元;A multi-component-based electric field probe and magnetic field probe calibration system, including microstrip line calibration components, fixtures, vector network analyzers and data processing units;
所述的微带线校准组件包含第一组微带线和第二组微带线,两组微带线分布于同一PCB板的不同走线层上或者分布在独立的PCB板上;所述的第一组微带线的一端连接有第一匹配负载,第一组微带线的另一端为第一激励端口;所述的第二组微带线的一端连接有第二匹配负载,第二组微带线的另一端为第二激励端口;所述的第一组微带线与第二组微带线相互垂直,其垂直交叉点正上方1mm处为校准点,固定安装于所述夹具上的被校场探头垂直于PCB板且被校场探头的探测中心与校准点重合;The microstrip line calibration component includes a first group of microstrip lines and a second group of microstrip lines, the two groups of microstrip lines are distributed on different wiring layers of the same PCB board or distributed on an independent PCB board; One end of the first group of microstrip lines is connected with a first matching load, and the other end of the first group of microstrip lines is a first excitation port; one end of the second group of microstrip lines is connected with a second matching load, The other end of the two sets of microstrip lines is the second excitation port; the first set of microstrip lines and the second set of microstrip lines are perpendicular to each other, and the calibration point is 1mm directly above the vertical crossing point, which is fixedly installed on the The calibrated probe on the fixture is perpendicular to the PCB board and the detection center of the calibrated probe coincides with the calibration point;
所述的矢量网络分析仪分别与所述的第一组微带线上的第一激励端口、第二组微带线上的第二激励端口、以及被校场探头的输出端口连接;所述的数据处理单元用于计算各校准频率点的被校场探头的校准因子。The vector network analyzer is respectively connected to the first excitation port on the first group of microstrip lines, the second excitation port on the second group of microstrip lines, and the output port of the probe to be schooled; The data processing unit is used to calculate the calibration factor of the calibrated field probe at each calibration frequency point.
作为本发明的优选,所述的第一组微带线采用单根微带线或者共模激励下的差分线,用于产生磁场分量H y;第二组微带线采用差模激励下的差分线,用于产生电场分量E xAs a preference of the present invention, the first group of microstrip lines adopts a single microstrip line or a differential line under common mode excitation to generate the magnetic field component Hy ; the second group of microstrip lines adopts a differential line under differential mode excitation. The differential line is used to generate the electric field component E x .
作为本发明的优选,所述的校准因子α和β的计算公式为:As a preference of the present invention, the calculation formulas of the calibration factors α and β are:
Figure PCTCN2020133072-appb-000001
Figure PCTCN2020133072-appb-000001
其中,对于磁场探头,α为探头对待测磁场的校准因子,β为探头对非待测电场的耦合度;对于电场探头,α为探头对非待测磁场的耦合度,β为探头对待测电 场的校准因子;
Figure PCTCN2020133072-appb-000002
分别表示当第一激励端口处施加1W激励功率时,校准点的磁场强度和电场强度;
Figure PCTCN2020133072-appb-000003
Figure PCTCN2020133072-appb-000004
分别表示当第二激励端口处施加1W激励功率时,校准点的磁场强度和电场强度;S 13和S 23为矢量网络分析仪测得的散射参数;Z 3为探头终端接的阻抗(一般为50欧姆)。
Among them, for magnetic field probes, α is the calibration factor of the probe to be measured magnetic field, β is the coupling degree of the probe to the non-measured electric field; for electric field probes, α is the coupling degree of the probe to the non-measured magnetic field, and β is the probe's electric field to be measured. Calibration factor;
Figure PCTCN2020133072-appb-000002
Respectively indicate the magnetic field strength and electric field strength of the calibration point when 1W excitation power is applied to the first excitation port;
Figure PCTCN2020133072-appb-000003
with
Figure PCTCN2020133072-appb-000004
Respectively represent the magnetic field strength and electric field strength of the calibration point when 1W excitation power is applied to the second excitation port; S 13 and S 23 are the scattering parameters measured by the vector network analyzer; Z 3 is the impedance of the probe terminal connection (usually 50 ohms).
本发明还公开了一种基于上述电场探头和磁场探头校准系统的校准方法,步骤如下:The invention also discloses a calibration method based on the above-mentioned electric field probe and magnetic field probe calibration system, the steps are as follows:
1)固定微带线校准组件与被校场探头的相对位置,使被校场探头垂直于微带线所在的PCB板,并且被校场探头的探测中心与校准点重合;1) Fix the relative position of the microstrip line calibration component and the field probe to be calibrated so that the field probe to be calibrated is perpendicular to the PCB board where the microstrip line is located, and the detection center of the field probe to be calibrated coincides with the calibration point;
2)将所述的第一组微带线上的第一激励端口、第二组微带线上的第二激励端口、以及被校场探头的输出端口分别连接到矢量网络分析仪;通过矢量网络分析仪内部的信号源施加不同校准频率的激励信号,针对每一校准频率f,再由矢量网络分析仪测得三个端口的散射参数矩阵
Figure PCTCN2020133072-appb-000005
其中S ij(i,j=1,2,3)随频率f变化;
2) Connect the first excitation port on the first group of microstrip lines, the second excitation port on the second group of microstrip lines, and the output port of the field probe to the vector network analyzer; The signal source inside the analyzer applies excitation signals of different calibration frequencies. For each calibration frequency f, the vector network analyzer measures the three-port scattering parameter matrix
Figure PCTCN2020133072-appb-000005
Where S ij (i,j=1, 2, 3) varies with frequency f;
3)针对按照步骤1)配制的微带线校准组件,在第一组微带线上的第一激励端口处施加1W的激励功率,得到校准点的磁场强度
Figure PCTCN2020133072-appb-000006
和电场强度
Figure PCTCN2020133072-appb-000007
同样,在第二组微带线上的第二激励端口处施加1W的激励功率,得到校准点的磁场强度
Figure PCTCN2020133072-appb-000008
和电场强度
Figure PCTCN2020133072-appb-000009
Figure PCTCN2020133072-appb-000010
作为微带线校准组件产生的电磁场参考值;
3) For the microstrip line calibration component prepared according to step 1), apply 1W excitation power at the first excitation port on the first set of microstrip lines to obtain the magnetic field strength of the calibration point
Figure PCTCN2020133072-appb-000006
And electric field strength
Figure PCTCN2020133072-appb-000007
Similarly, apply 1W excitation power at the second excitation port on the second set of microstrip lines to obtain the magnetic field strength at the calibration point
Figure PCTCN2020133072-appb-000008
And electric field strength
Figure PCTCN2020133072-appb-000009
Bundle
Figure PCTCN2020133072-appb-000010
As the reference value of the electromagnetic field generated by the microstrip calibration component;
4)根据步骤2)中矢量网络分析仪测量得到的S 13、S 23和步骤3)中得到的
Figure PCTCN2020133072-appb-000011
采用如下公式计算每一个校准频率点的待测场探头的校准因子α和β:
4) According to the S 13 and S 23 measured by the vector network analyzer in step 2) and the value obtained in step 3)
Figure PCTCN2020133072-appb-000011
Use the following formula to calculate the calibration factors α and β of the field probe to be measured at each calibration frequency point:
Figure PCTCN2020133072-appb-000012
Figure PCTCN2020133072-appb-000012
其中,对于磁场探头,α为探头对待测磁场的校准因子,β为探头对非待测电场的耦合度;对于电场探头,α为探头对非待测磁场的耦合度,β为探头对待测电场的校准因子。Among them, for the magnetic field probe, α is the calibration factor of the probe to be measured, and β is the coupling degree of the probe to the non-measured electric field; for the electric field probe, α is the coupling degree of the probe to the non-measured magnetic field, and β is the probe's electric field to be measured. The calibration factor.
本发明具备的有益效果是:The beneficial effects of the present invention are:
本发明的校准系统采用两组微带线,在水平面内可以产生相互垂直的一个主要磁场分量和一个主要电场分量;利用该磁场与电场分量测试电场探头和磁场探头的响应来对探头进行校准,得到两个耦合系数。The calibration system of the present invention uses two sets of microstrip lines, which can generate a main magnetic field component and a main electric field component perpendicular to each other in the horizontal plane; use the magnetic field and the electric field component to test the response of the electric field probe and the magnetic field probe to calibrate the probe, Two coupling coefficients are obtained.
在探头的校准过程中,对于磁场探头,不止考虑外部磁场对磁场探头的耦合,进一步计算外部电场对磁场探头的耦合,从而可以全面、准确的衡量磁场探头对待测磁场的耦合能力(或敏感度)和对非待测电场的抑制能力。同理,对于电场探头,不止考虑外部电场对电场探头的耦合,进一步计算外部磁场对电场探头的耦合,从而可以全面、准确的衡量电场探头对待测电场的耦合能力(或敏感度)和对非待测磁场的抑制能力。该方法弥补了目前采用单磁场分量或单电场分量只能测量探头对待测场耦合度的局限性,能够全面地衡量电场探头对非待测磁场、磁场探头对非待测电场的抑制度,在电磁近场扫描方面有很大的引用价值。In the probe calibration process, for the magnetic field probe, not only the coupling of the external magnetic field to the magnetic field probe is considered, but also the coupling of the external electric field to the magnetic field probe is further calculated, so that the coupling capability (or sensitivity of the magnetic field probe) of the magnetic field probe to be measured can be comprehensively and accurately measured. ) And the ability to suppress the electric field that is not under test. In the same way, for the electric field probe, not only the coupling of the external electric field to the electric field probe is considered, but also the coupling of the external magnetic field to the electric field probe is further calculated, so that the coupling capability (or sensitivity) of the electric field probe to be measured can be comprehensively and accurately measured. The ability to suppress the magnetic field to be measured. This method makes up for the limitation that the current single magnetic field component or single electric field component can only measure the coupling degree of the field to be measured by the probe, and can comprehensively measure the suppression degree of the electric field probe to the non-measured magnetic field and the magnetic field probe to the non-measured electric field. There is great reference value in electromagnetic near-field scanning.
附图说明Description of the drawings
图1是本发明的校准系统示意图;Figure 1 is a schematic diagram of the calibration system of the present invention;
图2是本发明实施例中的微带线校准组件示意图,其中两组微带线分布在同一个PCB板上,位于PCB的不同走线层且相互垂直;2 is a schematic diagram of a microstrip line calibration assembly in an embodiment of the present invention, in which two sets of microstrip lines are distributed on the same PCB board, are located on different wiring layers of the PCB and are perpendicular to each other;
图3(a)是本发明实施例中的第一组微带线校准示意图;Figure 3 (a) is a schematic diagram of the first set of microstrip line calibration in an embodiment of the present invention;
图3(b)是本发明实施例中的第二组微带线校准示意图;Figure 3(b) is a schematic diagram of the second set of microstrip line calibration in an embodiment of the present invention;
图4是本发明的耦合系数与现有磁场校准系数的对比。Fig. 4 is a comparison between the coupling coefficient of the present invention and the existing magnetic field calibration coefficient.
具体实施方式Detailed ways
下面结合说明书附图对本发明做进一步的说明。The present invention will be further explained below in conjunction with the accompanying drawings of the specification.
一种基于多分量的电场探头和磁场探头校准系统,校准示意图如图1所示,包括微带线校准组件、夹具、矢量网络分析仪和数据处理单元,所述的数据处理单元用于计算各校准频率点的被校场探头的校准因子。A calibration system for electric and magnetic field probes based on multi-components. The calibration diagram is shown in Figure 1. It includes a microstrip calibration component, a fixture, a vector network analyzer, and a data processing unit. The calibration factor of the calibrated field probe at the calibration frequency point.
微带线校准组件包含第一组微带线和第二组微带线。两组微带线可以分布于同一PCB板的不同走线层上,如图2所示,也可以分布在独立的PCB板上,如图3所示;第一组微带线为单根微带线或者共模激励下的差分线,用于产生磁场分量H y,第二组微带线为差模激励下的差分线,用于产生电场分量E x;所述的第一组微带线的一端连接有第一匹配负载,第一组微带线的另一端为第一激励端 口;所述的第二组微带线的一端连接有第二匹配负载,第二组微带线的另一端为第二激励端口;所述的第一组微带线与第二组微带线相互垂直分布/放置,其垂直交叉点正上方1mm处为校准点,固定安装于夹具上的被校场探头垂直于PCB板且被校场探头的探测中心与校准点重合。 The microstrip line calibration component includes a first set of microstrip lines and a second set of microstrip lines. The two sets of microstrip lines can be distributed on different wiring layers of the same PCB board, as shown in Figure 2, or on a separate PCB board, as shown in Figure 3. The first group of microstrip lines is a single microstrip line. The strip line or the differential line under common mode excitation is used to generate the magnetic field component Hy , the second group of microstrip lines are the differential line under the differential mode excitation, used to generate the electric field component E x ; the first group of microstrip lines One end of the line is connected to the first matching load, and the other end of the first group of microstrip lines is the first excitation port; one end of the second group of microstrip lines is connected to the second matching load, and the second group of microstrip lines is The other end is the second excitation port; the first group of microstrip lines and the second group of microstrip lines are distributed/placed perpendicular to each other, and the calibration point is 1mm directly above the vertical intersection point, which is fixedly installed on the calibrated field on the fixture The probe is perpendicular to the PCB board and the detection center of the calibrated field probe coincides with the calibration point.
在本发明的具体实施中,微带线校准组件如图2所示(两组微带线在同一PCB板的不同布线层)或者图3所示(两组微带线在不同PCB板上)。In the specific implementation of the present invention, the microstrip line calibration component is shown in Figure 2 (two sets of microstrip lines are on different wiring layers of the same PCB board) or Figure 3 (two sets of microstrip lines are on different PCB boards) .
1)第一组微带线:单根、匹配的微带线(如图1所示)或者共模激励、匹配的差分线(如图2、图3所示),沿x方向分布,其上方产生的主要磁场分量是H y。微带线一端连接匹配负载,另一端定义为激励端口1(对于单根微带线,在微带线与地平面之间加入激励;对于差分线,在两根线并联和地平面之间加入激励)。 1) The first group of microstrip lines: single, matched microstrip lines (as shown in Figure 1) or common mode excitation and matched differential lines (as shown in Figures 2 and 3), distributed along the x direction, and The main magnetic field component generated above is Hy . One end of the microstrip line is connected to a matched load, and the other end is defined as excitation port 1 (for a single microstrip line, add excitation between the microstrip line and the ground plane; for a differential line, add an excitation between the two wires in parallel and the ground plane excitation).
2)第二组微带线:另一组是差模激励、匹配的差分线,沿y方向分布。采用差模激励(在两根线之间加入激励),其上方产生的主要电场分量是E x。差分微带线一端连接匹配负载,另一端定义为激励端口2。 2) The second group of microstrip lines: the other group is differential mode excitation and matching differential lines, distributed along the y direction. Using differential mode excitation (adding excitation between two wires), the main electric field component generated above it is E x . One end of the differential microstrip line is connected to a matched load, and the other end is defined as the excitation port 2.
定义校准点为两组微带线的中心线的交叉点正上方1mm处。按照1)-2)的配置,在校准点可以得到水平面内两个相互垂直的电磁场分量:E x和H yThe calibration point is defined as 1mm directly above the intersection of the center lines of the two sets of microstrip lines. According to 1) -2) is disposed at the calibration point can be within the electromagnetic field components in two mutually perpendicular horizontal plane: E x and H y.
对于图2所示两组微带线分布在同一个PCB板上的校准组件,校准时被校场探头通过夹具放置于微带线上方,只需用矢量网络分析仪测量一次;对于图3所示两组微带线分布在不同PCB板上的校准组件,校准时被校场探头分别放置于两组微带线上方,保持探头位置不变,更换微带线用矢量网络分析仪测量两次。探头的探测中心与校准点重合,如图1、图2、图3所示。探头的输出端定义为端口3。For the calibration components shown in Figure 2 where the two sets of microstrip lines are distributed on the same PCB board, the calibration probe is placed above the microstrip line through the fixture during calibration, and only needs to be measured once with a vector network analyzer; for the calibration components shown in Figure 3 Two sets of microstrip line calibration components are distributed on different PCB boards. During calibration, the field probes are placed above the two sets of microstrip lines. Keep the probe position unchanged. Replace the microstrip line and measure twice with a vector network analyzer. The detection center of the probe coincides with the calibration point, as shown in Figure 1, Figure 2, and Figure 3. The output terminal of the probe is defined as port 3.
对于图1、图2、图3所示结构,矢量网络分析仪分别与端口1、端口2、以及被校场探头的输出端口3连接,通过矢量网络分析仪内部的信号源输出不同校准频率的激励信号。针对每一校准频率f,再由矢量网络分析仪测得该3端口网络的S参数散射矩阵,建立如下模型:For the structures shown in Figure 1, Figure 2, and Figure 3, the vector network analyzer is connected to port 1, port 2, and the output port 3 of the field probe to be calibrated, and the internal signal source of the vector network analyzer outputs excitations of different calibration frequencies. Signal. For each calibration frequency f, the S-parameter scattering matrix of the 3-port network is measured by a vector network analyzer, and the following model is established:
Figure PCTCN2020133072-appb-000013
Figure PCTCN2020133072-appb-000013
其中a 1至a 3和b 1至b 3分别是三个端口的入射波和反射波。矩阵元素S ij(i,j=1,2,3) 随频率f变化,由矢量网络分析仪测量得到,满足互易性。 Where a 1 to a 3 and b 1 to b 3 are the incident waves and reflected waves at the three ports, respectively. The matrix element S ij (i,j=1, 2, 3) changes with the frequency f and is measured by a vector network analyzer to meet the reciprocity.
由于两组微带线匹配良好,由S散射参数理论和公式(1)可以得到:Since the two sets of microstrip lines are well matched, the S scattering parameter theory and formula (1) can be obtained:
当端口1外加1V激励电压、端口2匹配时When 1V excitation voltage is applied to port 1 and port 2 is matched
Figure PCTCN2020133072-appb-000014
Figure PCTCN2020133072-appb-000014
当端口2外加1V激励电压、端口1匹配时When 1V excitation voltage is applied to port 2 and port 1 matches
Figure PCTCN2020133072-appb-000015
Figure PCTCN2020133072-appb-000015
公式(2)和(3)中,V 3是端口3接阻抗Z 3时的电压,Z 1、Z 2分别是端口1、2的参考阻抗。下面利用校准算法,用校准点的E x和H y计算探头的输出电压V 3,并令其与公式(2)和(3)分别相等,从而解出探头对外部电场和磁场的耦合系数。 In formulas (2) and (3), V 3 is the voltage when port 3 is connected to impedance Z 3 , and Z 1 and Z 2 are the reference impedances of ports 1 and 2, respectively. Next, use the calibration algorithm to calculate the output voltage V 3 of the probe with the E x and H y of the calibration point, and make it equal to formulas (2) and (3) respectively, so as to solve the coupling coefficient of the probe to the external electric field and magnetic field.
1.校准算法1. Calibration Algorithm
画出微带线校准组件模型,并用电磁全波软件仿真,可以得到校准点处E x和H y。仿真的微带线校准组件模型需与测量中采用的微带线一致,但不包括探头和夹具部分。对于图1所示结构,端口3的电压V 3是由校准点的电磁场H y和E x感应产生的,且V 3与H y和E x成如下正比关系: Draw the microstrip line calibration component model, and use electromagnetic full-wave software to simulate, you can get E x and H y at the calibration point. The simulated microstrip line calibration component model must be consistent with the microstrip line used in the measurement, but does not include the probe and fixture parts. For the configuration shown in FIG. 1, the port voltage of 3 V 3 by the electromagnetic field and the calibration points E x H y induced, and V 3 and H y E x and to the following proportional relation:
V 3=αH y+βE x        (4) V 3 =αH y +βE x (4)
其中,对于磁场探头,α为探头对待测磁场的校准因子,β为探头对非待测电场的耦合度;对于电场探头,α为探头对非待测磁场的耦合度,β为探头对待测电场的校准因子。公式(4)中既考虑了微带线校准组件产生的主要水平电、磁场分量,也考虑了次要水平电、磁场分量。Among them, for the magnetic field probe, α is the calibration factor of the probe to be measured, and β is the coupling degree of the probe to the non-measured electric field; for the electric field probe, α is the coupling degree of the probe to the non-measured magnetic field, and β is the probe's electric field to be measured. The calibration factor. In formula (4), both the main horizontal electric and magnetic field components generated by the microstrip line calibration component are considered, as well as the secondary horizontal electric and magnetic field components.
当端口1外加1W激励功率、端口2匹配时,仿真得到校准点处的电磁场为
Figure PCTCN2020133072-appb-000016
换算为当端口1外加1V激励电压时并结合公式(4),得到
When 1W excitation power is applied to port 1 and port 2 is matched, the electromagnetic field at the calibration point is obtained by simulation as
Figure PCTCN2020133072-appb-000016
Converted to when 1V excitation voltage is applied to port 1 and combined with formula (4), we get
Figure PCTCN2020133072-appb-000017
Figure PCTCN2020133072-appb-000017
当端口2外加1W激励功率、端口1匹配时,仿真得到校准点处的电磁场为
Figure PCTCN2020133072-appb-000018
换算为当端口2外加1V激励电压时并结合公式(4),得到
When 1W excitation power is applied to port 2 and port 1 is matched, the electromagnetic field at the calibration point is obtained by simulation as
Figure PCTCN2020133072-appb-000018
Converted to when 1V excitation voltage is applied to port 2 and combined with formula (4), we get
Figure PCTCN2020133072-appb-000019
Figure PCTCN2020133072-appb-000019
令(2)=(5),(3)=(6),得到Let (2)=(5), (3)=(6), get
Figure PCTCN2020133072-appb-000020
Figure PCTCN2020133072-appb-000020
(7)式为最后得到的耦合系数的计算公式。其中,
Figure PCTCN2020133072-appb-000021
由矢量网络分析仪测量得到,
Figure PCTCN2020133072-appb-000022
由电磁全波软件仿真值得到,α和β为求出的校准因子或耦合系数。
Figure PCTCN2020133072-appb-000023
α和β都随频率而变化。
(7) Formula is the calculation formula of the coupling coefficient finally obtained. in,
Figure PCTCN2020133072-appb-000021
Measured by vector network analyzer,
Figure PCTCN2020133072-appb-000022
Obtained from the simulation value of electromagnetic full-wave software, α and β are the calculated calibration factors or coupling coefficients.
Figure PCTCN2020133072-appb-000023
Both α and β vary with frequency.
2.校准因子的使用方法2. How to use the calibration factor
采用校准后的磁场探头测量待测磁场时,以测试H y为例,磁场探头连接频谱仪,根据频谱仪测得的电压V 3,可以计算待测磁场为H y=V 3/α;β用于衡量磁场探头对非待测电场的耦合度,β越小,代表非待测电场对磁场探头的影响越小。 When the calibrated magnetic field probe is used to measure the magnetic field to be measured, take the test Hy as an example, and the magnetic field probe is connected to a spectrum analyzer. According to the voltage V 3 measured by the spectrum analyzer, the magnetic field to be measured can be calculated as Hy = V 3 /α; β It is used to measure the coupling degree of the magnetic field probe to the non-measured electric field. The smaller the β, the smaller the influence of the non-measured electric field on the magnetic field probe.
采用校准后的电场探头测量待测电场时,以测试E x为例,电场探头连接频谱仪,根据频谱仪测得的电压V 3,可以计算待测电场E x=V 3/β;α用于衡量电场探头对非待测磁场的耦合度,α越小,代表非待测磁场对电场探头的影响越小。 When the calibrated electric field probe is used to measure the electric field to be measured, take the test E x as an example, and the electric field probe is connected to a spectrum analyzer. According to the voltage V 3 measured by the spectrum analyzer, the electric field to be measured E x =V 3 /β can be calculated; α is used To measure the coupling degree of the electric field probe to the non-measured magnetic field, the smaller the α, the smaller the influence of the non-measured magnetic field on the electric field probe.
3.校准因子的计算例子3. Calculation example of calibration factor
图4是在采用图3所示校准微带线的情况下,本发明对某一测量磁场H y的磁场探头校准因子的计算结果。其中,“现有磁场校准系数1”是指采用图3(a)第一组微带线作为校准件时,现有校准方法求出的磁场耦合因子;“现有磁场校准系数2”是指采用图3(b)第二组微带线作为校准件时,现有校准方法求出的磁场耦合因子。现有校准方法与本发明校准方法的主要区别在于现有校准方法只使用一组微带线作为校准件。从图中可以看出: Fig. 4 is a calculation result of the calibration factor of a magnetic field probe for measuring a magnetic field Hy by the present invention when the calibration microstrip line shown in Fig. 3 is used. Among them, "existing magnetic field calibration coefficient 1" refers to the magnetic field coupling factor obtained by the existing calibration method when the first group of microstrip lines in Figure 3(a) is used as the calibration component; "existing magnetic field calibration coefficient 2" refers to When the second set of microstrip lines in Fig. 3(b) are used as calibration parts, the magnetic field coupling factor obtained by the existing calibration method. The main difference between the existing calibration method and the calibration method of the present invention is that the existing calibration method only uses a set of microstrip lines as calibration components. It can be seen from the figure:
1)图3(a)第一组共模激励的差分线,其产生的磁场H y较大、电场E x较小。此时非待测电场E x对磁场探头的影响较小,因此本发明算出的磁场耦合系数α与“现有磁场校准系数1”吻合良好,证明了本发明兼容现有磁场校准系数。 1) Fig. 3(a) The first set of differential lines excited by the common mode, the generated magnetic field Hy is relatively large, and the electric field E x is relatively small. At this time, the non-measured electric field E x has a small influence on the magnetic field probe. Therefore, the magnetic field coupling coefficient α calculated by the present invention is in good agreement with the "existing magnetic field calibration coefficient 1", which proves that the present invention is compatible with the existing magnetic field calibration coefficient.
2)图3(b)第二组差模激励的差分线,其产生的磁场H y较小、电场E x较大。此时非待测电场E x对磁场探头的影响较大,因此“现有磁场校准系数2”有误差,并偏离“现有磁场校准系数1”。而本发明算出的磁场耦合系数α与“现有磁场校准系数1”吻合良好,且本发明算出的电场耦合系数β可以很好地解释“现有磁场校准系数2”与“现有磁场校准系数1”偏离的原因:正是由于非待测电场E x与磁场探头的耦合(用耦合系数β表示),使得磁场探头在检测弱磁场时产生误差。 2) Fig. 3(b) The second group of differential lines excited by the differential mode, the generated magnetic field Hy is small, and the electric field E x is large. At this time, the non-measured electric field E x has a greater impact on the magnetic field probe, so the "existing magnetic field calibration coefficient 2" has an error and deviates from the "existing magnetic field calibration coefficient 1". The magnetic field coupling coefficient α calculated by the present invention is in good agreement with the "existing magnetic field calibration coefficient 1", and the electric field coupling coefficient β calculated by the present invention can well explain the "existing magnetic field calibration coefficient 2" and the "existing magnetic field calibration coefficient 1". 1" The reason for the deviation: It is the coupling of the non-measured electric field E x and the magnetic field probe (indicated by the coupling coefficient β) that makes the magnetic field probe produce errors when detecting weak magnetic fields.
以上所述的实施例只是本发明的一种较佳的方案,然其并非用以限制本发明。有关技术领域的普通技术人员,在不脱离本实用新型的精神和范围的情况下,还可以做出各种变化和变型。因此凡采取等同替换或等效变换的方式所获得的技术方案,均落在本发明的保护范围内。The above-mentioned embodiment is only a preferred solution of the present invention, but it is not intended to limit the present invention. A person of ordinary skill in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, all technical solutions obtained by equivalent substitutions or equivalent transformations fall within the protection scope of the present invention.

Claims (4)

  1. 一种基于多分量的电场探头和磁场探头校准系统,其特征在于,包括微带线校准组件、夹具、矢量网络分析仪和数据处理单元;A multi-component-based calibration system for electric and magnetic field probes, which is characterized in that it includes a microstrip line calibration component, a fixture, a vector network analyzer, and a data processing unit;
    所述的微带线校准组件包含第一组微带线和第二组微带线,两组微带线分布于同一PCB板的不同走线层上或者分布在独立的PCB板上;所述的第一组微带线的一端连接有第一匹配负载,第一组微带线的另一端为第一激励端口;所述的第二组微带线的一端连接有第二匹配负载,第二组微带线的另一端为第二激励端口;所述的第一组微带线与第二组微带线相互垂直,其垂直交叉点正上方1mm处为校准点,固定安装于所述夹具上的被校场探头垂直于PCB板且被校场探头的探测中心与校准点重合;The microstrip line calibration component includes a first group of microstrip lines and a second group of microstrip lines, the two groups of microstrip lines are distributed on different wiring layers of the same PCB board or distributed on an independent PCB board; One end of the first group of microstrip lines is connected with a first matching load, and the other end of the first group of microstrip lines is a first excitation port; one end of the second group of microstrip lines is connected with a second matching load, The other end of the two sets of microstrip lines is the second excitation port; the first set of microstrip lines and the second set of microstrip lines are perpendicular to each other, and the calibration point is 1mm directly above the vertical crossing point, which is fixedly installed on the The calibrated probe on the fixture is perpendicular to the PCB board and the detection center of the calibrated probe coincides with the calibration point;
    所述的矢量网络分析仪分别与所述的第一组微带线上的第一激励端口、第二组微带线上的第二激励端口、以及被校场探头的输出端口连接;所述的数据处理单元用于计算各校准频率点的被校场探头的校准因子。The vector network analyzer is respectively connected to the first excitation port on the first group of microstrip lines, the second excitation port on the second group of microstrip lines, and the output port of the probe to be schooled; The data processing unit is used to calculate the calibration factor of the calibrated field probe at each calibration frequency point.
  2. 根据权利要求1所述的一种基于多分量的电场探头和磁场探头校准系统,其特征在于,所述的第一组微带线采用单根微带线或者共模激励下的差分线,第二组微带线采用差模激励下的差分线。The multi-component-based electric field probe and magnetic field probe calibration system according to claim 1, wherein the first group of microstrip lines adopts a single microstrip line or a differential line under common mode excitation, and The two sets of microstrip lines use differential lines under differential mode excitation.
  3. 根据权利要求1所述的一种基于多分量的电场探头和磁场探头校准系统,其特征在于,所述的校准因子的计算公式为:The multi-component-based electric field probe and magnetic field probe calibration system according to claim 1, wherein the calculation formula of the calibration factor is:
    Figure PCTCN2020133072-appb-100001
    Figure PCTCN2020133072-appb-100001
    其中,对于磁场探头,α为探头对待测磁场的校准因子,β为探头对非待测电场的耦合度;对于电场探头,α为探头对非待测磁场的耦合度,β为探头对待测电场的校准因子;
    Figure PCTCN2020133072-appb-100002
    分别表示当第一激励端口处施加1W激励功率时,校准点的磁场强度和电场强度;
    Figure PCTCN2020133072-appb-100003
    Figure PCTCN2020133072-appb-100004
    分别表示当第二激励端口处施加1W激励功率时,校准点的磁场强度和电场强度;S 13和S 23为矢量网络分析仪测得的散射参数;Z 3为探头终端接的阻抗;f为校准频率。
    Among them, for the magnetic field probe, α is the calibration factor of the probe to be measured, and β is the coupling degree of the probe to the non-measured electric field; for the electric field probe, α is the coupling degree of the probe to the non-measured magnetic field, and β is the probe's electric field to be measured. Calibration factor;
    Figure PCTCN2020133072-appb-100002
    Respectively indicate the magnetic field strength and electric field strength of the calibration point when 1W excitation power is applied to the first excitation port;
    Figure PCTCN2020133072-appb-100003
    with
    Figure PCTCN2020133072-appb-100004
    Respectively represent the magnetic field strength and electric field strength of the calibration point when 1W excitation power is applied to the second excitation port; S 13 and S 23 are the scattering parameters measured by the vector network analyzer; Z 3 is the impedance of the probe terminal connection; f is Calibration frequency.
  4. 一种基于权利要求1所述的电场探头和磁场探头校准系统的校准方法,其特征在于步骤如下:A calibration method based on the electric field probe and magnetic field probe calibration system according to claim 1, characterized in that the steps are as follows:
    1)固定微带线校准组件与被校场探头的相对位置,使被校场探头垂直于微 带线所在的PCB板,并且被校场探头的探测中心与校准点重合;1) Fix the relative position of the calibration component of the microstrip line and the probe to be calibrated so that the probe to be calibrated is perpendicular to the PCB board where the microstrip line is located, and the detection center of the probe to be calibrated coincides with the calibration point;
    2)将所述的第一组微带线上的第一激励端口、第二组微带线上的第二激励端口、以及被校场探头的输出端口分别连接到矢量网络分析仪;通过矢量网络分析仪内部的信号源施加不同校准频率的激励信号,针对每一校准频率f,再由矢量网络分析仪测得三个端口的散射参数矩阵
    Figure PCTCN2020133072-appb-100005
    其中S ij(i,j=1,2,3)随频率f变化;
    2) Connect the first excitation port on the first group of microstrip lines, the second excitation port on the second group of microstrip lines, and the output port of the field probe to the vector network analyzer; The signal source inside the analyzer applies excitation signals of different calibration frequencies. For each calibration frequency f, the vector network analyzer measures the three-port scattering parameter matrix
    Figure PCTCN2020133072-appb-100005
    Where S ij (i,j=1, 2, 3) varies with frequency f;
    3)针对按照步骤1)配制的微带线校准组件,在第一组微带线上的第一激励端口处施加1W的激励功率,得到校准点的磁场强度
    Figure PCTCN2020133072-appb-100006
    和电场强度
    Figure PCTCN2020133072-appb-100007
    同样,在第二组微带线上的第二激励端口处施加1W的激励功率,得到校准点的磁场强度
    Figure PCTCN2020133072-appb-100008
    和电场强度
    Figure PCTCN2020133072-appb-100009
    Figure PCTCN2020133072-appb-100010
    作为微带线校准组件产生的电磁场参考值;
    3) For the microstrip line calibration component prepared according to step 1), apply 1W excitation power at the first excitation port on the first set of microstrip lines to obtain the magnetic field strength of the calibration point
    Figure PCTCN2020133072-appb-100006
    And electric field strength
    Figure PCTCN2020133072-appb-100007
    Similarly, apply 1W excitation power at the second excitation port on the second set of microstrip lines to obtain the magnetic field strength at the calibration point
    Figure PCTCN2020133072-appb-100008
    And electric field strength
    Figure PCTCN2020133072-appb-100009
    Bundle
    Figure PCTCN2020133072-appb-100010
    As the reference value of the electromagnetic field generated by the microstrip calibration component;
    4)根据步骤2)中矢量网络分析仪测量得到的S 13、S 23和步骤3)中得到的
    Figure PCTCN2020133072-appb-100011
    采用如下公式计算每一个校准频率点的待测场探头的校准因子α和β:
    4) According to the S 13 and S 23 measured by the vector network analyzer in step 2) and the value obtained in step 3)
    Figure PCTCN2020133072-appb-100011
    Use the following formula to calculate the calibration factors α and β of the field probe to be measured at each calibration frequency point:
    Figure PCTCN2020133072-appb-100012
    Figure PCTCN2020133072-appb-100012
    其中,对于磁场探头,α为探头对待测磁场的校准因子,β为探头对非待测电场的耦合度;对于电场探头,α为探头对非待测磁场的耦合度,β为探头对待测电场的校准因子。Among them, for the magnetic field probe, α is the calibration factor of the probe to be measured, and β is the coupling degree of the probe to the non-measured electric field; for the electric field probe, α is the coupling degree of the probe to the non-measured magnetic field, and β is the probe's electric field to be measured. The calibration factor.
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