WO2021179663A1 - Transducer, and manufacturing method therefor and application thereof - Google Patents

Transducer, and manufacturing method therefor and application thereof Download PDF

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Publication number
WO2021179663A1
WO2021179663A1 PCT/CN2020/129193 CN2020129193W WO2021179663A1 WO 2021179663 A1 WO2021179663 A1 WO 2021179663A1 CN 2020129193 W CN2020129193 W CN 2020129193W WO 2021179663 A1 WO2021179663 A1 WO 2021179663A1
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Prior art keywords
layer
etching
hollow
cuboid
height
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PCT/CN2020/129193
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French (fr)
Chinese (zh)
Inventor
刘嘉俊
彭本贤
于峰崎
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深圳先进技术研究院
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Publication of WO2021179663A1 publication Critical patent/WO2021179663A1/en

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
    • B06B1/0651—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element of circular shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
    • B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00539—Wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
    • B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
    • B06B2201/70—Specific application
    • B06B2201/76—Medical, dental

Definitions

  • the invention belongs to the field of micro-electromechanical technology, and relates to a transducer and a preparation method and application thereof, in particular to a concentric circular-ring capacitive micro-mechanical ultrasonic transducer based on a non-diffraction sound field, and a preparation method and application thereof.
  • Ultrasound is a kind of mechanical wave with higher vibration frequency than sound wave. It has the characteristics of high frequency, short wavelength, small diffraction phenomenon, good directivity, and it can become rays and propagate directionally. Ultrasound can transmit information, and it is easy to obtain more concentrated sound energy. Ultrasound has a strong ability to penetrate liquids and solids, especially in solids that are opaque to sunlight. It can penetrate to a depth of tens of meters. Therefore, ultrasonic testing is widely used in industry, agriculture, national defense, and medicine.
  • the ultrasonic transducer is formed of a piezoelectric ceramic material such as PZT or a piezoelectric polymer such as PVDF.
  • the current transducer can be made by semiconductor technology.
  • Such a transducer is formed of a tiny semiconductor unit in which a vibrating membrane generates and receives ultrasonic energy, and is called a micromachined ultrasonic transducer (MUT).
  • MUT micromachined ultrasonic transducer
  • Two such transducer types are: those that use piezoelectric materials on the membrane, known as piezoelectric micromachined ultrasonic transducers (PMUT); and those that use the capacitive effect between a conductive membrane and another electrode Those are called capacitive micromachined ultrasonic transducers (CMUT).
  • PMUT piezoelectric micromachined ultrasonic transducers
  • CMUT capacitive micromachined ultrasonic transducers
  • CMUT capacitive micromachined ultrasonic transducer
  • CMUT capacitive micromachined ultrasonic sensor
  • CMUT capacitive micromachined ultrasonic sensor
  • a corrosion area must be formed between the upper electrode and the lower electrode, and the corrosion solution is poured into it. After the cavity gap is formed, the corrosion solution is removed.
  • this process method will have the following two problems: 1. In the process of wet etching, the corrosion rate will be caused by the concentration of the etching solution and the corrosion time, which will cause the different corrosion levels and thus reduce the process consistency. 2. In the process of cleaning the corrosive liquid, due to the small cavity gap (2um) and the existence of the liquid surface tension, it is easy to cause the upper and lower electrodes to stick together, which leads to the failure of the device.
  • the purpose of the present invention is to provide a transducer and its preparation method and application, wherein the transducer is a non-diffracted ultrasonic sound field, because the non-diffracted wave can travel infinitely far without divergence in an ideal state, and the non-diffracted wave It is a highly focused ultrasound.
  • time-delay focusing processing is not required, which improves the imaging frame rate; in the preparation process, reactive ion deep etching and wet etching are used together, which is convenient for Self-stop during the preparation process; avoid multiple photolithography, and can ensure the consistency and repeatability in the process operation; by setting the metal layer as a channel, avoid the first component and the second component from sticking to each other.
  • One of the objectives of the present invention is to provide a transducer, the transducer comprising: a first component, a second component, and a third component for connecting the first component and the second component;
  • the first component includes an upper board layer and a first lead layer
  • the second component includes a lower board layer and a second lead layer
  • the third component includes an insulating layer, a conductive layer, a parylene layer, and a hollow layer located inside the insulating layer;
  • the upper electrode plate layer, the first lead layer and the second lead layer are all suspended above the lower electrode plate layer;
  • the upper electrode plate layer and the first lead layer are connected through the conductive layer in the third component;
  • the lower electrode plate layer and the second lead layer are connected by the conductive layer in the third component.
  • the transducer is a non-diffracted ultrasonic sound field, because the non-diffracted wave can travel infinitely far without divergence in an ideal state, and the non-diffracted wave is a highly focused ultrasound, which is applied to ultrasound imaging
  • the system does not need to perform delay focusing processing, which improves the imaging frame rate; the speed of the sound wave in the human body is about 1.5mm/ ⁇ s.
  • the sound wave round-trip time is 267 ⁇ s
  • the sound wave can travel in the human body for a distance of 20cm, and the imaging speed It is 3750 frames per second.
  • the current traditional ultrasound imaging system speed is only 30 frames per second, and the use of non-diffracting wave imaging will effectively increase the imaging speed.
  • the transducer in the present invention is a concentric circular-ring capacitive micromachined ultrasonic transducer based on a non-diffracting sound field, which can greatly reduce the device area and facilitate the arraying of the transducer under the premise of having better ultrasonic intensity and ultrasonic frequency.
  • the upper electrode plate layer includes a first metal layer, a second metal layer ringed on the outer periphery of the first metal layer, and a third metal layer ringed on the outer periphery of the second metal layer.
  • the first metal layer, the second metal layer, and the third metal layer are arranged in concentric circles from the inside to the outside.
  • the first metal layer is a solid cylinder
  • the radius of the bottom surface of the cylinder is 0-100 ⁇ m, (not including 0, such as 1 ⁇ m, 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 40 ⁇ m, 50 ⁇ m, 60 ⁇ m, 70 ⁇ m, 80 ⁇ m, 90 ⁇ m, 100 ⁇ m, etc.), preferably 5 ⁇ m
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.) , Preferably 0.55 ⁇ m.
  • the second metal layer is a hollow cylinder
  • the outer radius of the bottom surface of the hollow cylinder is 4-400 ⁇ m, (for example, 4 ⁇ m, 10 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m). ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 400 ⁇ m, etc.), preferably 15 ⁇ m
  • the inner radius of the bottom surface is 2-200 ⁇ m, (for example, 2 ⁇ m, 10 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, etc.
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the third metal layer is a hollow cylinder, and the outer radius of the bottom surface of the hollow cylinder is 8-700 ⁇ m, (for example, 8 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m).
  • the inner radius of the bottom surface is 6-500 ⁇ m, (for example, 6 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 400 ⁇ m, 450 ⁇ m, 500 ⁇ m, etc.), preferably 17 ⁇ m
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the first lead layer is arranged on the outer periphery of the third metal layer, and is arranged at an interval from the third metal layer.
  • the shape of the first lead layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 15-25 ⁇ m, (for example, 15 ⁇ m, 16 ⁇ m, 17 ⁇ m, 18 ⁇ m, 19 ⁇ m, 20 ⁇ m, 21 ⁇ m, 22 ⁇ m, 23 ⁇ m, 24 ⁇ m, 25 ⁇ m, etc.), preferably 20 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, with a height of 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.51 ⁇ m, 0.52 ⁇ m, 0.53 ⁇ m, 0.54 ⁇ m , 0.55 ⁇ m, 0.56 ⁇ m, 0.57 ⁇ m,
  • the material of the upper electrode plate layer and the first lead layer are both aluminum.
  • the lower electrode plate layer includes a metal layer and a lower insulating layer located on the bottom surface of the metal layer.
  • the material of the metal layer is aluminum.
  • the material of the insulating layer is silicon dioxide.
  • the shape of the metal layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 250-350 ⁇ m, (for example, 250 ⁇ m, 260 ⁇ m ⁇ m, 270 ⁇ m, 280 ⁇ m, 290 ⁇ m, 300 ⁇ m, 310 ⁇ m, 320 ⁇ m, 330 ⁇ m, 340 ⁇ m, 350 ⁇ m, etc.), preferably 300 ⁇ m, with a width of 250-350 ⁇ m, (for example, 250 ⁇ m, 260 ⁇ m , 270 ⁇ m, 280 ⁇ m, 290 ⁇ m, 300 ⁇ m, 310 ⁇ m, 320 ⁇ m, 330 ⁇ m, 340 ⁇ m, 350 ⁇ m, etc.), preferably 300 ⁇ m, with a height of 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m,
  • the shape of the lower insulating layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 250-350 ⁇ m, (for example, 250 ⁇ m, 260 ⁇ m ⁇ m, 270 ⁇ m, 280 ⁇ m, 290 ⁇ m, 300 ⁇ m, 310 ⁇ m, 320 ⁇ m, 330 ⁇ m, 340 ⁇ m, 350 ⁇ m, etc.), preferably 300 ⁇ m, with a width of 250-350 ⁇ m, (for example, 250 ⁇ m, 260 ⁇ m , 270 ⁇ m, 280 ⁇ m, 290 ⁇ m, 300 ⁇ m, 310 ⁇ m, 320 ⁇ m, 330 ⁇ m, 340 ⁇ m, 350 ⁇ m, etc.), preferably 300 ⁇ m, with a height of 1.5-1.8 ⁇ m, (for example, 1.5 ⁇ m, 1.55 ⁇ m, 1.6 ⁇ m, 1.65 ⁇ m, 1.7 ⁇ m
  • the shape of the second lead layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 15-25 ⁇ m, (for example, 15 ⁇ m, 16 ⁇ m, 17 ⁇ m, 18 ⁇ m, 19 ⁇ m, 20 ⁇ m, 21 ⁇ m, 22 ⁇ m, 23 ⁇ m, 24 ⁇ m, 25 ⁇ m, etc.), preferably 20 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, with a height of 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.51 ⁇ m, 0.52 ⁇ m, 0.53 ⁇ m, 0.54 ⁇ m , 0.55 ⁇ m, 0.56 ⁇ m, 0.57 ⁇ m,
  • the material of the second lead layer is aluminum.
  • the material of the insulating layer is silicon dioxide.
  • the conductive layer includes an aluminum layer and a tungsten layer arranged perpendicular to the aluminum layer.
  • the tungsten layer includes a first tungsten layer, a second tungsten layer, and a third tungsten layer arranged at intervals from parallel.
  • the electrical signal of the upper electrode plate layer is sequentially conducted to the first lead layer through the first tungsten layer, the aluminum layer, and the second tungsten layer.
  • the electrical signal of the lower electrode plate layer is conducted to the second lead layer through the third tungsten layer.
  • the shape of the aluminum layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 2-100 ⁇ m, (for example, 2 ⁇ m, 10 ⁇ m, 20 ⁇ m, 30 ⁇ m, 40 ⁇ m, 50 ⁇ m, 60 ⁇ m, 70 ⁇ m , 80 ⁇ m, 90 ⁇ m, 100 ⁇ m, etc.), preferably 8 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, and the height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the shape of the first tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 ⁇ m, (for example, 0.1 ⁇ m, 3 ⁇ m, 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 12 ⁇ m, 15 ⁇ m, 18 ⁇ m, 20 ⁇ m, etc.), Preferably 5 ⁇ m, width 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, height 0.5- 0.6 ⁇ m, preferably 0.55 ⁇ m.
  • the shape of the second tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 ⁇ m, (for example, 0.1 ⁇ m, 3 ⁇ m, 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 12 ⁇ m, 15 ⁇ m, 18 ⁇ m, 20 ⁇ m, etc.), preferably 5 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, with a height of 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m .
  • the shape of the third tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 ⁇ m, (for example, 0.1 ⁇ m, 3 ⁇ m, 5 ⁇ m, 8 ⁇ m, 10 ⁇ m, 12 ⁇ m, 15 ⁇ m, 18 ⁇ m, 20 ⁇ m, etc.), preferably 5 ⁇ m, with a width of 0.3-0.7 ⁇ m, (for example, 0.3 ⁇ m, 0.35 ⁇ m, 0.4 ⁇ m, 0.45 ⁇ m, 0.5 ⁇ m, 0.55 ⁇ m, 0.6 ⁇ m, 0.65 ⁇ m, 0.7 ⁇ m, etc.), preferably 0.5 ⁇ m, with a height of 2.5-3 ⁇ m, (for example, 2.5 ⁇ m, 2.55 ⁇ m, 2.6 ⁇ m, 2.65 ⁇ m, 2.7 ⁇ m, 2.75 ⁇ m, 2.8 ⁇ m , 2.85 ⁇ m, 2.9 ⁇ m, 2.95
  • the parylene layer and the hollow layer are both arranged in parallel below the conductive layer, and the vertical distance between the parylene layer and the conductive layer is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m). ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the hollow layer includes a first hollow layer, a second hollow layer ringed on the outer periphery of the first hollow layer, and a third hollow layer disposed on the outer periphery of the second hollow layer.
  • the shape of the first hollow layer is a cylinder
  • the radius of the bottom surface of the cylinder is 0-100 ⁇ m, (not including 0, such as 1 ⁇ m, 5 ⁇ m, 10 ⁇ m, 20 ⁇ m, 30 ⁇ m , 40 ⁇ m, 50 ⁇ m, 60 ⁇ m, 70 ⁇ m, 80 ⁇ m, 90 ⁇ m, 100 ⁇ m, etc.), preferably 3 ⁇ m
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m, 0.57 ⁇ m, 0.6 ⁇ m etc.), preferably 0.55 ⁇ m.
  • the shape of the second hollow layer is a hollow cylinder
  • the inner radius of the bottom surface of the hollow cylinder is 2.5-205 ⁇ m, (for example, 2.5 ⁇ m, 5 ⁇ m, 10 ⁇ m, 30 ⁇ m, 50 ⁇ m, 70 ⁇ m, 100 ⁇ m, 120 ⁇ m, 150 ⁇ m, 170 ⁇ m, 200 ⁇ m, 205 ⁇ m, etc.), preferably 9 ⁇ m
  • the outer radius of the bottom surface is 3.5-395 ⁇ m, (for example 3.5 ⁇ m, 10 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 395 ⁇ m, etc.)
  • the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇ m, 0.52 ⁇ m, 0.55 ⁇ m , 0.57 ⁇ m, 0.6 ⁇ m, etc.), preferably 0.55 ⁇ m.
  • the shape of the third hollow layer is a hollow cylinder
  • the inner radius of the bottom surface of the hollow cylinder is 6.5-505 ⁇ m, (for example, 6.5 ⁇ m, 30 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 400 ⁇ m, 450 ⁇ m, 505 ⁇ m, etc.), preferably 19 ⁇ m
  • the outer radius of the bottom surface is 7.5-695 ⁇ m, (for example 7.5 ⁇ m, 30 ⁇ m, 50 ⁇ m, 100 ⁇ m, 150 ⁇ m, 200 ⁇ m, 250 ⁇ m, 300 ⁇ m, 350 ⁇ m, 400 ⁇ m, 450 ⁇ m, 500 ⁇ m, 550 ⁇ m, 600 ⁇ m, 650 ⁇ m, 695 ⁇ m, etc.), It is preferably 23 ⁇ m, and the side height is 0.5-0.6 ⁇ m, (for example, 0.5 ⁇
  • the parylene layer is arranged on the outer periphery of the third hollow layer.
  • parylene the role of parylene is to block the corroded holes, usually 1 g parylene evaporates 5.5 h, the thickness of the horizontal surface obtained is 1 ⁇ m, and the content of parylene is adjusted as needed.
  • the second object of the present invention is to provide a method for preparing the transducer as described in the first object.
  • the preparation method includes: passing the bare chip through primary etching, coating and secondary etching in sequence to obtain the transducer. Energy device.
  • the die is first designed by Cadence virtuoso and then produced.
  • the appearance structure of the bare chip is a rectangular parallelepiped, which is perpendicular to the upper and lower bottom surfaces of the rectangular parallelepiped.
  • the bare chip is cut along the center of the upper and lower bottom surfaces, and the section is parallel to one side of the rectangular parallelepiped;
  • Figure 1 is a cross-sectional view of the bare chip structure, as shown in the figure.
  • the structure of the die includes a non-metal oxide layer and an aluminum layer A2 distributed inside the non-metal oxide layer A1 (in order to make the figure more concise and clear, only one aluminum layer is identified, and A2 is not just referring to the figure
  • the marked aluminum layer M1 refers to the aluminum layers M1-M5 in Figure 1 as a whole and the tungsten layer A3 (in order to make the figure more concise and clear, only one tungsten layer is identified, and A3 is not just a mark in the figure
  • the tungsten layer W1 refers to the metal layers W1-W4 in Figure 1) and the silicon nitride layer A4 on the upper surface of the non-metal oxide layer A1; the non-metal oxide layer is a silicon dioxide layer; the aluminum layer
  • the number of layers is 5, from bottom to top including M1 layer, M2 layer, M3 layer, M4 layer and M5 layer; the aluminum layer can be continuously distributed or spaced apart.
  • M1 includes only one aluminum layer
  • M2 includes 6 aluminum layers spaced from left to right (that is, M21 layer, M22 layer, M23 layer, M24 layer, M25 layer, M26 layer )
  • M3 includes only one aluminum layer
  • M4 includes 7 aluminum layers spaced from left to right (that is, M41, M42, M43, M44, M45, M46, M47)
  • M5 only Including an aluminum layer
  • the number of tungsten layers is 4 layers, from left to right including W1 layer, W2 layer, W3 layer and W4 layer
  • W1 layer is used to connect M5 layer and M21 layer vertically
  • W2 layer is used for vertical connection
  • the W3 layer is used to vertically connect the M3 layer and the M46 layer
  • the W4 layer is used to vertically connect the M1 layer and the M47 layer.
  • the direction from left to right in FIG. 1 is recorded as the length
  • the direction from top to bottom is recorded as the height
  • the direction from the inside to the outside is recorded as the width.
  • the first etching includes the first deep reactive ion etching and wet etching of the die in sequence.
  • the first deep reactive ion etching is dry etching.
  • the first deep reactive ion etching is dry etching.
  • the first reactive ion deep etching in the present invention belongs to dry etching, which has good vertical etching ability for non-metal compounds, but has no corrosive effect on metals. It only reacts with non-metals and does not react with metals. Characteristic, the etching process will stop automatically due to the existence of the aluminum layer from top to bottom.
  • the etching parameters of the first deep reactive ion etching include: the etching gas is a mixed gas of CHF 3 and oxygen, and the power of the RIE source is 50-80 W, such as 50W, 55W, 60W, 65W , 70W, 75W, 80W, etc., the uniformity of etching is 90-95%, such as 90%, 91%, 92%, 93%, 94%, 95%, etc.
  • the volume ratio of CHF 3 and oxygen in the mixed gas of CHF 3 and oxygen is (3-6):1, for example, 3:1, 3.5:1, 4:1, 4.5:1, 5: 1, 5.5:1, 6:1, etc.
  • the first deep reactive ion etching includes etching and removing the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the bare chip, as well as those arranged perpendicular to the M5 layer and not protected by the M5 layer. Silica layer to obtain preform A.
  • FIG. 2 is a cross-sectional view of the preform A obtained after the first deep reactive ion etching.
  • the upper surface of the M5 layer in the original FIG. The silicon nitride layer and the silicon dioxide layer, and the silicon dioxide layer with vertical M5 setting and no M5 layer protection is removed from top to bottom to obtain the structure of preform A.
  • the reaction Ions only react with the silicon dioxide layer, not the metal layer. During the top-down corrosion process, when it corrodes to the M5 metal layer, the corrosion will automatically stop.
  • the wet etching includes acid etching.
  • the preparation method of the acid solution for acid etching includes: mixing phosphoric acid, nitric acid, glacial acetic acid, and deionized water in a volume ratio of 1:1:2:16.
  • the wet etching includes etching and removing the W1 layer and the M2 layer in the preform A to obtain the preform B.
  • FIG. 3 is a cross-sectional view of the preform B obtained after wet etching.
  • the acid used in the wet etching will react with the metal instead of If it reacts with the silicon dioxide layer, the W1 layer will be etched and removed first in the wet process. The W1 layer and the M21 layer are connected. After the W1 layer is removed by the acid solution, the acid solution will continue to corrode the M21 layer.
  • the M21 layer, The M22 layer, M23 layer, M24 layer, M25 layer, and M26 layer are provided with micro channels. The acid will follow the micro channels to the M21 layer, M22 layer, M23 layer, M24 layer, M25 layer and M26 layer.
  • the coating includes depositing a parylene layer on the upper surface of the silicon dioxide layer in the preform B, the W1 layer removed by etching, and the part of the M2 layer removed by etching to obtain the preform C.
  • the method of deposition is chemical vapor deposition.
  • FIG. 4 is a cross-sectional view of the structure of the preform C obtained by chemical vapor deposition.
  • the preform B the upper surface of the silicon dioxide layer, the W1 layer removed by etching, and the etching Part of the removed M2 layer is deposited with Parylene layer, the purpose is to block the corroded pores, so that the cavity can be in a vacuum state, and secondly, to prevent subsequent work in water, water infiltration into the device, resulting in the actual effect of the device;
  • Ruilin film is prepared by a unique vacuum vapor deposition process.
  • a fully conformal polymer film coating is "grown" on the surface of the substrate by active small molecules, which can be coated on various shapes of surfaces, including sharp edges, The cracks and the inner surface have advantages that other coatings cannot match.
  • the chemical vapor deposition method includes:
  • the second etching is the second deep reactive ion etching.
  • the second deep reactive ion etching is dry etching.
  • the etching parameters of the second deep reactive ion etching include: the etching gas is a mixed gas of CHF 3 and oxygen, and the power of the RIE source is 50-80 W, such as 50W, 55W, 60W, 65W , 70W, 75W, 80W, etc., the uniformity of etching is 90-95%, such as 90%, 91%, 92%, 93%, 94%, 95%, etc.
  • the volume ratio of CHF 3 and oxygen in the mixed gas of CHF 3 and oxygen is (3-6):1, for example, 3:1, 3.5:1, 4:1, 4.5:1, 5: 1, 5.5:1, 6:1, etc.
  • the second reactive ion deep etching includes removing the paricillin layer and the silicon dioxide layer on the upper surface of the M4 layer in the preform C, and is arranged perpendicular to the M4 layer, and there is no M4 layer and M3 layer The protected paricillin layer and silicon dioxide layer, to obtain the transducer.
  • FIG. 5 is a cross-sectional view of the transducer structure obtained by the second deep etching of reactive ion, as shown in FIG.
  • the cillin layer and silicon dioxide layer, and the parecillin layer and silicon dioxide layer which are arranged perpendicular to the M4 layer and are not protected by the M4 layer and the M3 layer.
  • reactive ion deep etching and wet etching are used in conjunction to facilitate self-stop during the preparation process, avoid the use of complex etching methods such as photolithography, and ensure the repeatability in the process operation;
  • micro-holes are provided in the M2 to reduce the width of the hollow, thereby reducing the hollow area, and avoiding the upper film from sticking to the lower film, thereby forming a cavity that can be vibrated.
  • the third object of the present invention is to provide an application of the transducer as described in the first object in ultrasound imaging.
  • the present invention has the following beneficial effects:
  • the transducer of the present invention can greatly reduce the device area and facilitate the arraying of the transducer; in the preparation process, reactive ion deep etching and wet etching are used together, It is convenient to stop automatically during the preparation process, avoids the use of complex etching methods such as photolithography, and can ensure the repeatability of the process operation; in addition, the micro-channels are set in the M2 to reduce the width of the hollow, thereby reducing The hollow area is small, and the upper film is prevented from sticking to the lower film, thereby forming a vibrating cavity.
  • Figure 1 is a cross-sectional view of the bare chip structure in the summary of the invention.
  • A1 is a non-metal oxide layer
  • A2 is an aluminum layer
  • A3 is a tungsten layer
  • A4 is a silicon nitride layer
  • M1-M5 are all aluminum layers
  • W1-W4 are all tungsten layers
  • Figure 2 is a cross-sectional view of the structure of the preform A in the summary of the invention.
  • Figure 3 is a cross-sectional view of the preform B structure in the summary of the invention.
  • Figure 5 is a cross-sectional view of the transducer structure in the summary of the invention.
  • Figure 6 is a top view of the transducer in the embodiment
  • Figure 7 is a cross-sectional view along AA' of Figure 6;
  • 11 is the upper electrode plate layer
  • 12 is the first lead layer
  • 21 is the lower electrode plate layer
  • 211 is the metal layer
  • 212 is the lower insulating layer
  • 22 is the second lead layer
  • 31 is the insulating layer
  • 32 is the Perry In the forest layer
  • 33 is a hollow layer
  • 341 is an aluminum layer
  • 342 is a first tungsten layer
  • 343 is a second tungsten layer
  • 344 is a third tungsten layer.
  • FIG. 6 is a top view of the transducer
  • FIG. 7 is a cross-sectional view of FIG. 6 along AA'. It can be seen from the combination of FIG. 6 and FIG. Assembly and a third assembly filled between the first assembly and the second assembly.
  • the first assembly includes an upper plate layer 11 and a first lead layer 12, and the second assembly includes a lower plate layer 21 and a second lead layer 22.
  • the three components include an insulating layer 31, a parylene layer 32, a hollow layer 33, and a conductive layer located inside the insulating layer; the conductive layer includes an aluminum layer 341, and a first tungsten layer 342 and a second tungsten layer arranged perpendicular to the aluminum layer 341 343.
  • the third tungsten layer 344; the upper electrode plate layer 11, the first lead layer 12 and the second lead layer 22 are all suspended above the lower plate layer 21; the upper electrode plate layer 11 and the first lead layer 12 pass through the first The tungsten layer 342, the aluminum layer 341, and the second aluminum layer 343 are connected; the lower plate layer 21 and the second lead layer 22 are connected through the third tungsten layer 344; wherein the upper plate layer 11 includes a first metal layer, which is arranged around the first metal layer.
  • the lower plate layer 21 includes a metal layer 211 and a lower insulating layer 212 located on the lower surface of the metal layer 211;
  • a parylene layer 32 and the hollow layer 33 are both arranged in parallel below the aluminum layer 341;
  • the hollow layer 33 includes a first hollow layer, a second hollow layer ringed on the outer periphery of the first hollow layer, and a second hollow layer ringed on the outer periphery of the second hollow layer.
  • Three hollow layers; Parylene layer 32 is arranged on the outer periphery of the third hollow layer.
  • the material of the upper electrode plate layer and the first lead layer is aluminum
  • the shape of the first metal layer is a solid cylinder
  • the radius of the bottom surface is 5 ⁇ m
  • the height of the side surface is 0.55 ⁇ m
  • the shape of the second metal layer is hollow Cylinder with a bottom outer radius of 15 ⁇ m, a bottom inner radius of 7 ⁇ m, and a side height of 0.55 ⁇ m
  • the shape of the third metal layer is a hollow cylinder with a bottom outer radius of 25 ⁇ m and a bottom inner radius of 17 ⁇ m, the side height is 0.55 ⁇ m
  • the shape of the first lead layer is a cuboid, the length of the cuboid is 20 ⁇ m, the width is 0.5 ⁇ m, and the height is 0.55 ⁇ m
  • the material of the lower board metal layer is aluminum, the shape is a cuboid, and the length is 300 ⁇ m, the width is 300 ⁇ m, the height is 0.55 ⁇ m; the
  • the length of the rectangular parallelepiped is 20 ⁇ m, the width is 0.5 ⁇ m, and the height is 0.55 ⁇ m; the material of the insulating layer is silicon dioxide, and the insulating layer is filled on the upper plate layer, the first lead layer, and the second lead
  • the shape of the aluminum layer in the insulating layer is a cuboid, the length of the cuboid is 8 ⁇ m, the width is 0.5 ⁇ m, and the height is 0.55 ⁇ m; the shape of the first tungsten layer is a cuboid, and the length of the cuboid is 5.
  • the width is 0.5 ⁇ m
  • the height is 0.55 ⁇ m
  • the shape of the second tungsten layer is a cuboid, the length of the cuboid is 5 ⁇ m, the width is 0.5 ⁇ m, and the height is 0.55 ⁇ m
  • the shape of the third tungsten layer is a cuboid, the length of the cuboid
  • the shape of the first hollow layer is a cylinder with a bottom radius of 3 ⁇ m and a side height of 0.55 ⁇ m
  • the shape of the second hollow layer is a hollow cylinder with an outer bottom surface
  • the radius is 13 ⁇ m
  • the inner radius is 9 ⁇ m
  • the side height is 0.55 ⁇ m
  • the shape of the third hollow layer is a hollow cylinder with a bottom outer radius of 23 ⁇ m, an inner radius of 19 ⁇ m
  • This embodiment also provides a method for manufacturing a transducer, which includes the following steps:
  • the first step design drawings through Cadence virtuoso, and then ask the foundry to produce, and tape out the die;
  • the appearance structure of the bare chip is a rectangular parallelepiped, which is perpendicular to the upper and lower bottom surfaces of the rectangular parallelepiped.
  • the bare chip is cut along the center of the upper and lower bottom surfaces, and the cross section is parallel to one side of the rectangular parallelepiped;
  • Figure 1 is a cross-sectional view of the bare chip structure, such as Figure 1 shows that the structure of the die includes a non-metal oxide layer and an aluminum layer A2 distributed inside the non-metal oxide layer A1 (In order to make the figure more concise and clear, only one aluminum layer is identified, and A2 is not just a reference to the figure.
  • the aluminum layer M1 marked in refers to the aluminum layer M1-M5 in Figure 1 and the tungsten layer A3 (in order to make the figure more concise and clear, only one tungsten layer is identified, and A3 is not just a reference to the mark in the figure.
  • the resulting tungsten layer W1 refers to the entire tungsten layer W1-W4 in Figure 1) and the silicon nitride layer A4 located on the upper surface of the non-metal oxide layer A1; the non-metal oxide layer is a silicon dioxide layer; aluminum
  • the number of layers is 5, from bottom to top including M1 layer, M2 layer, M3 layer, M4 layer and M5 layer.
  • the aluminum layer can be distributed continuously or spaced apart. If spaced apart, it will be located on the same horizontal plane.
  • M1 includes only one aluminum layer
  • M2 includes six aluminum layers spaced from left to right (that is, M21 layer, M22 layer, M23 layer, M24 layer, M25 layer, M26 Layer)
  • M3 includes only one aluminum layer
  • M4 includes 7 aluminum layers spaced from left to right (which can be M41 layer, M42 layer, M43 layer, M44 layer, M45 layer, M46 layer, M47 layer)
  • M5 Only one aluminum layer is included; the number of tungsten layers is 4, including W1, W2, W3, and W4 layers from left to right; W1 layer is used to connect M5 and M21 layers vertically, and W2 layer is used for vertical
  • W1 layer and the M45 layer are connected, the W3 layer is used to vertically connect the M3 layer and the M46 layer, and the W4 layer is used to vertically connect the M1 layer and the M47 layer.
  • the second step the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer of the bare chip obtained in the first step are removed by etching, and the silicon dioxide layer that is arranged perpendicular to the M5 layer and is not protected by the M5 layer, Get preform A;
  • the etching parameters of the first deep reactive ion etching include: the etching gas is a mixture of CHF 3 and oxygen with a volume ratio of 4:1, the power of the RIE source is 60 W, and the etching is uniform Sex is 93%.
  • Figure 2 in the content of the invention is a cross-sectional view of the preform A.
  • the upper surface of the M5 layer in the original figure 1 is removed by the first deep reactive ion etching.
  • the silicon nitride layer and silicon dioxide layer are removed from top to bottom, and the silicon dioxide layer with vertical M5 setting and no M5 layer protection is removed to obtain the structure of preform A.
  • the reactive ions only react with the silicon dioxide layer, not the metal layer. During the top-down corrosion process, when it corrodes to the M5 metal layer, the corrosion will automatically stop.
  • the third step wet etching the preform A obtained in the second step to obtain the preform B;
  • the preparation method of the acid for wet etching includes: mixing phosphoric acid, nitric acid, glacial acetic acid, and deionized water in a volume ratio of 1:1:2:16 to obtain an acid solution that satisfies the reaction with aluminum.
  • the metal layer can be removed better.
  • preform A is wet-etched to obtain preform B.
  • FIG. 3 is a cross-sectional view of preform B.
  • wet etching The acid used in the etching will react with the metal instead of the silicon dioxide layer.
  • the W1 layer will be etched and removed.
  • the W1 layer and the M21 layer are connected.
  • the acid solution will continue to corrode the M21 layer.
  • the M21 layer, the M22 layer, the M23 layer, the M24 layer, the M25 layer and the M26 layer are provided with microchannels.
  • the acid solution will follow the microchannels to the M21 layer, M22 layer, The M23, M24, M25, and M26 layers are etched to obtain preform B; and it can be seen from Figure 3 that in the M2 layer, due to the effect of the micro-channels, the width of the hollow is reduced, thereby reducing The hollow area is reduced, and the upper film is prevented from sticking to the lower film, thereby forming a vibrating cavity.
  • Step 4 In the preform B obtained in the third step, the upper surface of the silicon dioxide layer, the W1 layer removed by etching, and the part of the M2 layer removed by etching are all deposited by chemical vapor deposition to deposit the parylene layer to obtain the preform Product C;
  • the chemical vapor deposition method includes the following steps:
  • FIG. 4 is a cross-sectional view of the structure of the preform C.
  • the purpose of depositing the parylene layer is to block the corroded pores, so that the cavity can be in a vacuum state, and secondly, to prevent water from penetrating into the device during subsequent work in water, resulting in the actual effect of the device; the parylene film uses a unique Prepared by vacuum vapor deposition process, a fully conformal polymer film coating is "grown" on the surface of the substrate from active small molecules, which can be coated on various shapes of surfaces, including sharp edges, cracks and inner surfaces. Unmatched advantages of other coatings.
  • the fifth step the preform C obtained in the fourth step is subjected to the second reactive ion deep etching to obtain the transducer.
  • the etching parameters of the second reactive ion deep etching include: the etching gas is a mixture of CHF 3 and oxygen with a volume ratio of 4:1, the power of the RIE source is 60 W, and the etching uniformity It is 93%, and the value of the specific parameter is not specifically limited in this embodiment, and those skilled in the art can adjust it according to actual needs.
  • FIG. 5 is a cross-sectional view of the transducer structure.
  • the second reactive ion deep etching is used to remove the paricillin layer and the silicon dioxide layer on the upper surface of the M4 layer in the preform C, and the vertical It is set on the M4 layer and is not protected by the M4 layer and the M3 layer of Parecillin and silicon dioxide layer.
  • the performance test of the transducer obtained in Example 1 was carried out.
  • the test standard was as follows: a standard ultrasonic probe was used as the receiving end to test the transmitting performance of the developed transducer; an impedance analyzer was used to add an AC signal of 1V, a DC signal of 40V, and scanning Range [20KHz-1MHz], the measured ultrasonic intensity is 6.5 W/cm 2 , the ultrasonic frequency is 2000 KHz, and the array test meets the standard.
  • the material of the upper electrode plate layer and the first lead layer is aluminum
  • the shape of the first metal layer is a solid cylinder
  • the radius of the bottom surface is 1 ⁇ m
  • the height of the side surface is 0.5 ⁇ m
  • the shape of the second metal layer is a hollow cylinder
  • the outer radius of the bottom surface is 4 ⁇ m
  • the inner radius of the bottom surface is 2 ⁇ m
  • the height of the side surface is 0.6 ⁇ m
  • the shape of the third metal layer is a hollow cylinder
  • the outer radius of the bottom surface is 8 ⁇ m
  • the inner radius of the bottom surface is 6 ⁇ m
  • the height of the side surface is 0.6 ⁇ m
  • the shape of the first lead layer is a cuboid, the length of the cuboid is 15 ⁇ m, the width is 0.3 ⁇ m, and the height is 0.5 ⁇ m
  • the material of the lower board metal layer is aluminum
  • the shape is a cuboid
  • the length is 250 ⁇
  • This embodiment also provides a method for preparing a transducer.
  • the difference between the preparation method and embodiment 1 is only that the etching parameters of the first deep reactive ion etching and the second deep reactive ion etching include: the etching gas is volume A mixture of CHF 3 and oxygen gas with a ratio of 3:1, the power of the RIE source is 50 W, and the etching uniformity is 90%.
  • Example 2 The performance test of the transducer obtained in Example 2 is performed.
  • the test standard is the same as that of Example 1.
  • the measured ultrasonic intensity is 7 W/cm 2
  • the ultrasonic frequency is 2000 KHz
  • the array test meets the standard.
  • the material of the upper electrode plate layer and the first lead layer is aluminum
  • the shape of the first metal layer is a solid cylinder, the radius of the bottom surface is 100 ⁇ m, and the height of the side surface is 0.6 ⁇ m
  • the shape of the second metal layer is hollow Cylinder, the outer radius of the bottom surface is 400 ⁇ m, the inner radius of the bottom surface is 200 ⁇ m, and the side height is 0.6 ⁇ m
  • the shape of the third metal layer is a hollow cylinder, the outer radius of the bottom surface is 700 ⁇ m, and the inner radius of the bottom surface is 500 ⁇ m, the side height is 0.6 ⁇ m
  • the shape of the first lead layer is a cuboid, the length of the cuboid is 25 ⁇ m, the width is 0.7 ⁇ m, and the height is 0.6 ⁇ m
  • the material of the lower board metal layer is aluminum, the shape is a cuboid, and the length is 350 ⁇ m, the width is 350 ⁇ m, and the height
  • the length of the rectangular parallelepiped is 25 ⁇ m, the width is 0.7 ⁇ m, and the height is 0.6 ⁇ m;
  • the material of the insulating layer is silicon dioxide, and the insulating layer is filled in the upper plate layer, the first lead layer, and the second lead Between the layer and the lower plate layer;
  • the shape of the aluminum layer in the insulating layer is a cuboid, the length of the cuboid is 100 ⁇ m, the width is 0.7 ⁇ m, and the height is 0.6 ⁇ m;
  • the shape of the first tungsten layer is a cuboid, and the length of the cuboid is 20 ⁇ m ,
  • the width is 0.7 ⁇ m and the height is 0.6 ⁇ m;
  • the shape of the second tungsten layer is a cuboid, the length of the cuboid is 20 ⁇ m, the width is 0.7 ⁇ m, and the height is 0.6 ⁇ m;
  • This embodiment also provides a method for preparing a transducer.
  • the difference between the preparation method and Example 1 is only that the etching parameters of the first deep reactive ion etching and the second deep reactive ion etching include: the etching gas is volume A mixed gas of CHF 3 and oxygen with a ratio of 6:1, the power of the RIE source is 80 W, and the etching uniformity is 95%.
  • Example 3 The performance test of the transducer obtained in Example 3 is performed.
  • the test standard is the same as that of Example 1.
  • the measured ultrasonic intensity is 8 W/cm 2
  • the ultrasonic frequency is 2300 KHz
  • the array test meets the standard.

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Abstract

A transducer, and a manufacturing method therefor and an application thereof. The transducer comprises a first assembly, a second assembly, and a third assembly used for connecting the first assembly and the second assembly; the first assembly comprises a upper-level plate layer (11) and a first lead layer (12); the second assembly comprises a lower-level plate layer (21) and a second lead layer (22); the third assembly comprises an insulating layer (31), and a conductive layer, a parylene layer (32), and a hollow layer (33) that are located in the insulating layer (31); the upper-level plate layer (11), the first lead layer (12), and the second lead layer (22) all are suspended above the lower-level plate layer (21); the upper-level plate layer (11) and the first lead layer (12) are connected by means of the conductive layer in the third assembly; and the lower-level plate layer (21) and the second lead layer (22) are connected by means of the conductive layer in the third assembly. On the premise of having good ultrasonic intensity and ultrasonic frequency, the transducer can greatly reduce the area of a device, thereby facilitating the arraying of the transducer.

Description

一种换能器及其制备方法和应用Transducer and its preparation method and application 技术领域Technical field
本发明属于微机电技术领域，涉及一种换能器及其制备方法和应用，尤其涉及一种基于非衍射声场的同心圆环电容式微机械超声换能器及其制备方法和应用。The invention belongs to the field of micro-electromechanical technology, and relates to a transducer and a preparation method and application thereof, in particular to a concentric circular-ring capacitive micro-mechanical ultrasonic transducer based on a non-diffraction sound field, and a preparation method and application thereof.
背景技术Background technique
超声波是一种振动频率高于声波的机械波，它具有频率高、波长短、绕射现象小、方向性好能够成为射线而定向传播等特点。超声波，能够传递信息，易于获得较集中的声能。超声波对液体、固体的穿透能力强，尤其是在阳光不透明的固体中，它可穿透几十米的深度。因此超声波检测广泛应用在工业、农业、国防、医学等方面。Ultrasound is a kind of mechanical wave with higher vibration frequency than sound wave. It has the characteristics of high frequency, short wavelength, small diffraction phenomenon, good directivity, and it can become rays and propagate directionally. Ultrasound can transmit information, and it is easy to obtain more concentrated sound energy. Ultrasound has a strong ability to penetrate liquids and solids, especially in solids that are opaque to sunlight. It can penetrate to a depth of tens of meters. Therefore, ultrasonic testing is widely used in industry, agriculture, national defense, and medicine.
通常，超声换能器由诸如PZT的压电陶瓷材料或诸如PVDF的压电聚合物形成。目前换能器可以通过半导体工艺来制成。这样的换能器由其中振动膜生成并且接收超声能量的微小的半导体单元形成，并且被称为微机械超声换能器(MUT)。两种这样的换能器类型是：在膜上利用压电材料的那些，被称为压电微机械超声换能器(PMUT)；以及那些利用导电膜与另一电极之间的电容效应的那些，被称为电容式微机械超声换能器(CMUT)。个体换能器元件可以由一致操作的数十个或数百个这样的MUT单元形成。由于这些单元非常小，每个MUT单元仅产生或响应于小量的声能。通常使用单个换能器阵列化的方法来增大声能，而阵列对于压电微机械超声换能器(PMUT)而言难以实现。电容式微机械超声换能器(CMUT)的出现，很好地克服了压电传感器的许多缺点，且具有易于制造、尺寸小、自身噪声低、工作温度范围大以及易于实现大规模阵列电子集成等众多优点，大有取代压电传感器之势。Generally, the ultrasonic transducer is formed of a piezoelectric ceramic material such as PZT or a piezoelectric polymer such as PVDF. The current transducer can be made by semiconductor technology. Such a transducer is formed of a tiny semiconductor unit in which a vibrating membrane generates and receives ultrasonic energy, and is called a micromachined ultrasonic transducer (MUT). Two such transducer types are: those that use piezoelectric materials on the membrane, known as piezoelectric micromachined ultrasonic transducers (PMUT); and those that use the capacitive effect between a conductive membrane and another electrode Those are called capacitive micromachined ultrasonic transducers (CMUT). Individual transducer elements can be formed by dozens or hundreds of such MUT units operating in unison. Since these units are very small, each MUT unit only generates or responds to a small amount of acoustic energy. Generally, a single transducer array method is used to increase the acoustic energy, but the array is difficult to realize for the piezoelectric micromachined ultrasonic transducer (PMUT). The emergence of capacitive micromachined ultrasonic transducer (CMUT) has overcome many shortcomings of piezoelectric sensors, and has the advantages of easy manufacturing, small size, low self-noise, large operating temperature range, and easy implementation of large-scale array electronic integration. Many advantages have the potential to replace piezoelectric sensors.
基于腐蚀牺牲层技术的电容式微加工超声传感器(CMUT)基本结构由上下电极与电极之间的牺牲层组成。为释放牺牲层形成空腔间隙，上电极与下电极之间必须形成腐蚀区域，倒入腐蚀溶液，待空腔间隙形成后，把腐蚀溶液清除。在实际操作中，这种工艺方法会产生如下两种问题：1.在湿法腐蚀的过程中，腐蚀的成都会因腐蚀液的浓度及腐蚀时间造成腐蚀程度不同从而降低的工艺一致性。2.腐蚀液清除的过程中，由于空腔间隙微小（2um）及液体表面张力的存在，容易引起上塌陷，导致上下电极粘附在一起，从而导致器件失效。The basic structure of a capacitive micromachined ultrasonic sensor (CMUT) based on corrosion sacrificial layer technology consists of a sacrificial layer between the upper and lower electrodes. In order to release the sacrificial layer to form a cavity gap, a corrosion area must be formed between the upper electrode and the lower electrode, and the corrosion solution is poured into it. After the cavity gap is formed, the corrosion solution is removed. In actual operation, this process method will have the following two problems: 1. In the process of wet etching, the corrosion rate will be caused by the concentration of the etching solution and the corrosion time, which will cause the different corrosion levels and thus reduce the process consistency. 2. In the process of cleaning the corrosive liquid, due to the small cavity gap (2um) and the existence of the liquid surface tension, it is easy to cause the upper and lower electrodes to stick together, which leads to the failure of the device.
因此，提供一种器件面积小，便于器件阵列化，制备过程中能够自停止，且能有效避免振膜与基底粘滞的换能器及其制备方法非常有必要。Therefore, it is very necessary to provide a transducer with a small device area, easy device arraying, self-stop during the manufacturing process, and effectively avoiding the vibrating diaphragm and the substrate, and a manufacturing method thereof.
技术问题technical problem
本发明的目的在于提供一种换能器及其制备方法和应用，其中该换能器的是非衍射超声声场，由于非衍射波在理想状态下可以传播无限远且不会发散，并且非衍射波是一种高度聚焦的超声波，将其应用到超声成像系统中将不需要进行延时聚焦处理，提高了成像帧率；在制备过程中采用反应离子深刻蚀和湿法刻蚀配合使用，便于在制备过程中自停止；避免了多次光刻等，且能保证工艺操作过程中的一致性和可重复性；通过在金属层中设置为通道，避免第一组件和第二组件相互粘连。The purpose of the present invention is to provide a transducer and its preparation method and application, wherein the transducer is a non-diffracted ultrasonic sound field, because the non-diffracted wave can travel infinitely far without divergence in an ideal state, and the non-diffracted wave It is a highly focused ultrasound. When it is applied to an ultrasound imaging system, time-delay focusing processing is not required, which improves the imaging frame rate; in the preparation process, reactive ion deep etching and wet etching are used together, which is convenient for Self-stop during the preparation process; avoid multiple photolithography, and can ensure the consistency and repeatability in the process operation; by setting the metal layer as a channel, avoid the first component and the second component from sticking to each other.
技术解决方案Technical solutions
为达到此发明目的，本发明采用以下技术方案：In order to achieve the purpose of this invention, the present invention adopts the following technical solutions:
本发明的目的之一在于提供一种换能器，所述换能器包括：第一组件、第二组件以及用于连接第一组件和第二组件的第三组件；One of the objectives of the present invention is to provide a transducer, the transducer comprising: a first component, a second component, and a third component for connecting the first component and the second component;
所述第一组件包括上级板层和第一引线层；The first component includes an upper board layer and a first lead layer;
所述第二组件包括下级板层和第二引线层；The second component includes a lower board layer and a second lead layer;
所述第三组件包括绝缘层以及位于绝缘层内部的导电层、派瑞林层和空心层；The third component includes an insulating layer, a conductive layer, a parylene layer, and a hollow layer located inside the insulating layer;
所述上极板层、第一引线层和第二引线层均悬设在下极板层的上方；The upper electrode plate layer, the first lead layer and the second lead layer are all suspended above the lower electrode plate layer;
所述上极板层和第一引线层通过第三组件中的导电层相连；The upper electrode plate layer and the first lead layer are connected through the conductive layer in the third component;
所述下极板层和第二引线层通过第三组件中的导电层相连。The lower electrode plate layer and the second lead layer are connected by the conductive layer in the third component.
在本发明中，该换能器的是非衍射超声声场，由于非衍射波在理想状态下可以传播无限远且不会发散，并且非衍射波是一种高度聚焦的超声波，将其应用到超声成像系统中将不需要进行延时聚焦处理，提高了成像帧率；声波在人体内的速度大概是1.5mm/μs，当声波往返时间为267μs时，声波在人体内可传播距离为20cm，成像速度为3750 帧/秒。但目前传统的超声成像系统速度只有30 帧/秒，使用非衍射波成像将有效的提高成像速度。In the present invention, the transducer is a non-diffracted ultrasonic sound field, because the non-diffracted wave can travel infinitely far without divergence in an ideal state, and the non-diffracted wave is a highly focused ultrasound, which is applied to ultrasound imaging The system does not need to perform delay focusing processing, which improves the imaging frame rate; the speed of the sound wave in the human body is about 1.5mm/μs. When the sound wave round-trip time is 267μs, the sound wave can travel in the human body for a distance of 20cm, and the imaging speed It is 3750 frames per second. However, the current traditional ultrasound imaging system speed is only 30 frames per second, and the use of non-diffracting wave imaging will effectively increase the imaging speed.
本发明中的换能器是基于非衍射声场的同心圆环电容式微机械超声换能器，在具有较好超声强度以及超声频率的前提下，能够大大降低器件面积，便于换能器阵列化。The transducer in the present invention is a concentric circular-ring capacitive micromachined ultrasonic transducer based on a non-diffracting sound field, which can greatly reduce the device area and facilitate the arraying of the transducer under the premise of having better ultrasonic intensity and ultrasonic frequency.
在本发明中，所述上极板层包括第一金属层、环设在第一金属层外周缘的第二金属层以及环设在第二金属层外周缘的第三金属层。In the present invention, the upper electrode plate layer includes a first metal layer, a second metal layer ringed on the outer periphery of the first metal layer, and a third metal layer ringed on the outer periphery of the second metal layer.
在本发明中，第一金属层、第二金属层以及第三金属层呈同心圆由内向外排列。In the present invention, the first metal layer, the second metal layer, and the third metal layer are arranged in concentric circles from the inside to the outside.
在本发明中，所述第一金属层为实心圆柱体，所述圆柱体的底面半径为0-100 μm，（不包括0，例如1 μm、10 μm、20 μm、30 μm、40 μm、50 μm、60 μm、70 μm、80 μm、90 μm、100 μm等），优选5 μm，侧面高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the first metal layer is a solid cylinder, and the radius of the bottom surface of the cylinder is 0-100 μm, (not including 0, such as 1 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.), preferably 5 μm, the side height is 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.) , Preferably 0.55 μm.
在本发明中，所述第二金属层为空心圆柱体，所述空心圆柱体的底面外圆半径为4-400 μm，（例如4 μm、10 μm、50 μm、100 μm、150 μm、200 μm、250 μm、300 μm、350 μm、400 μm等），优选15 μm，底面内圆半径为2-200 μm，（例如2 μm、10 μm、50 μm、100 μm、150 μm、200 μm等），优选7 μm，侧面高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the second metal layer is a hollow cylinder, and the outer radius of the bottom surface of the hollow cylinder is 4-400 μm, (for example, 4 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm). μm, 250 μm, 300 μm, 350 μm, 400 μm, etc.), preferably 15 μm, the inner radius of the bottom surface is 2-200 μm, (for example, 2 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, etc. ), preferably 7 μm, and the side height is 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述第三金属层为空心圆柱体，所述空心圆柱体的底面外圆半径为8-700 μm，（例如8 μm、50 μm、100 μm、150 μm、200 μm、250 μm、300 μm、350 μm、400 μm、450 μm、500 μm、550 μm、600 μm、650 μm、700 μm等），优选25 μm，底面内圆半径为6-500 μm，（例如6 μm、50 μm、100 μm、150 μm、200 μm、250 μm、300 μm、350 μm、400 μm、450 μm、500 μm等），优选17 μm，侧面高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the third metal layer is a hollow cylinder, and the outer radius of the bottom surface of the hollow cylinder is 8-700 μm, (for example, 8 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm). μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 700 μm, etc.), preferably 25 μm, the inner radius of the bottom surface is 6-500 μm, (for example, 6 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, etc.), preferably 17 μm, the side height is 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述第一引线层设置在第三金属层的外周缘，且与第三金属层间隔设置。In the present invention, the first lead layer is arranged on the outer periphery of the third metal layer, and is arranged at an interval from the third metal layer.
在本发明中，所述第一引线层的形状为长方体，长方体的长度为15-25 μm，（例如15 μm、16 μm、17 μm、18 μm、19 μm、20 μm、21 μm、22 μm、23 μm、24 μm、25 μm等），优选20 μm，宽度为0.3-0.7 μm，（例如0.3 μm、0.35 μm、0.4 μm、0.45 μm、0.5 μm、0.55 μm、0.6 μm、0.65 μm、0.7 μm等），优选0.5 μm，高度为0.5-0.6 μm，（例如0.5 μm、0.51 μm、0.52 μm、0.53 μm、0.54 μm、0.55 μm、0.56 μm、0.57 μm、0.58 μm、0.59 μm、0.6 μm等），优选0.55 μm。In the present invention, the shape of the first lead layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 15-25 μm, (for example, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, 25 μm, etc.), preferably 20 μm, with a width of 0.3-0.7 μm, (for example, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, with a height of 0.5-0.6 μm, (for example, 0.5 μm, 0.51 μm, 0.52 μm, 0.53 μm, 0.54 μm , 0.55 μm, 0.56 μm, 0.57 μm, 0.58 μm, 0.59 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述上极板层和第一引线层的材质均为铝。In the present invention, the material of the upper electrode plate layer and the first lead layer are both aluminum.
在本发明中，所述下极板层包括金属层以及位于金属层下底面的下绝缘层。In the present invention, the lower electrode plate layer includes a metal layer and a lower insulating layer located on the bottom surface of the metal layer.
在本发明中，所述金属层的材质为铝。In the present invention, the material of the metal layer is aluminum.
在本发明中，所述绝缘层的材质为二氧化硅。In the present invention, the material of the insulating layer is silicon dioxide.
在本发明中，所述金属层的形状为长方体，所述长方体的长度为250-350 μm，（例如250 μm、260 μm、270 μm、280 μm、290 μm、300 μm、310 μm、320 μm、330 μm、340 μm、350 μm等），优选300 μm，，宽度为250-350 μm，（例如250 μm、260 μm、270 μm、280 μm、290 μm、300 μm、310 μm、320 μm、330 μm、340 μm、350 μm等），优选300 μm，高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the shape of the metal layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 250-350 μm, (for example, 250 μm, 260 μm μm, 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, etc.), preferably 300 μm, with a width of 250-350 μm, (for example, 250 μm, 260 μm , 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, etc.), preferably 300 μm, with a height of 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述下绝缘层的形状为长方体，所述长方体的长度为250-350 μm，（例如250 μm、260 μm、270 μm、280 μm、290 μm、300 μm、310 μm、320 μm、330 μm、340 μm、350 μm等），优选300 μm，，宽度为250-350 μm，（例如250 μm、260 μm、270 μm、280 μm、290 μm、300 μm、310 μm、320 μm、330 μm、340 μm、350 μm等），优选300 μm，高度为1.5-1.8 μm，（例如1.5 μm、1.55 μm、1.6 μm、1.65 μm、1.7 μm、1.75 μm、1.8 μm等），优选1.65 μm。In the present invention, the shape of the lower insulating layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 250-350 μm, (for example, 250 μm, 260 μm μm, 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, etc.), preferably 300 μm, with a width of 250-350 μm, (for example, 250 μm, 260 μm , 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, etc.), preferably 300 μm, with a height of 1.5-1.8 μm, (for example, 1.5 μm, 1.55 μm, 1.6 μm, 1.65 μm, 1.7 μm, 1.75 μm, 1.8 μm, etc.), preferably 1.65 μm.
在本发明中，第二引线层的形状为长方体，长方体的长度为15-25 μm，（例如15 μm、16 μm、17 μm、18 μm、19 μm、20 μm、21 μm、22 μm、23 μm、24 μm、25 μm等），优选20 μm，宽度为0.3-0.7 μm，（例如0.3 μm、0.35 μm、0.4 μm、0.45 μm、0.5 μm、0.55 μm、0.6 μm、0.65 μm、0.7 μm等），优选0.5 μm，高度为0.5-0.6 μm，（例如0.5 μm、0.51 μm、0.52 μm、0.53 μm、0.54 μm、0.55 μm、0.56 μm、0.57 μm、0.58 μm、0.59 μm、0.6 μm等），优选0.55 μm。In the present invention, the shape of the second lead layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 15-25 μm, (for example, 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, 25 μm, etc.), preferably 20 μm, with a width of 0.3-0.7 μm, (for example, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, with a height of 0.5-0.6 μm, (for example, 0.5 μm, 0.51 μm, 0.52 μm, 0.53 μm, 0.54 μm , 0.55 μm, 0.56 μm, 0.57 μm, 0.58 μm, 0.59 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述第二引线层的材质为铝。In the present invention, the material of the second lead layer is aluminum.
在本发明中，所述绝缘层的材质为二氧化硅。In the present invention, the material of the insulating layer is silicon dioxide.
在本发明中，所述导电层包括铝层以及与垂直于铝层设置的钨层。In the present invention, the conductive layer includes an aluminum layer and a tungsten layer arranged perpendicular to the aluminum layer.
在本发明中，所述钨层包括从平行间隔设置的第一钨层、第二钨层和第三钨层。In the present invention, the tungsten layer includes a first tungsten layer, a second tungsten layer, and a third tungsten layer arranged at intervals from parallel.
在本发明中，所述上极板层的电信号依次通过第一钨层、铝层以及第二钨层传导至第一引线层。In the present invention, the electrical signal of the upper electrode plate layer is sequentially conducted to the first lead layer through the first tungsten layer, the aluminum layer, and the second tungsten layer.
在本发明中，所述下极板层的电信号通过第三钨层传导至第二引线层。In the present invention, the electrical signal of the lower electrode plate layer is conducted to the second lead layer through the third tungsten layer.
在本发明中，所述铝层的形状为长方体，所述长方体的长度为2-100 μm，（例如2 μm、10 μm、20 μm、30 μm、40 μm、50 μm、60 μm、70 μm、80 μm、90 μm、100 μm等），优选8 μm，宽度为0.3-0.7 μm，（例如0.3 μm、0.35 μm、0.4 μm、0.45 μm、0.5 μm、0.55 μm、0.6 μm、0.65 μm、0.7 μm等），优选0.5 μm，高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the shape of the aluminum layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 2-100 μm, (for example, 2 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm , 80 μm, 90 μm, 100 μm, etc.), preferably 8 μm, with a width of 0.3-0.7 μm, (for example, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, and the height is 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述第一钨层的形状为长方体，所述长方体的长度为0.1-20 μm，（例如0.1μm、3μm、5μm、8μm、10μm、12μm、15μm、18μm、20μm等），优选5 μm，宽度为0.3-0.7 μm，（例如0.3 μm、0.35 μm、0.4 μm、0.45 μm、0.5 μm、0.55 μm、0.6 μm、0.65 μm、0.7 μm等），优选0.5 μm，高度为0.5-0.6 μm，优选0.55 μm。In the present invention, the shape of the first tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 μm, (for example, 0.1 μm, 3 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, etc.), Preferably 5 μm, width 0.3-0.7 μm, (for example, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, height 0.5- 0.6 μm, preferably 0.55 μm.
在本发明中，所述第二钨层的形状为长方体，所述长方体的长度为0.1-20 μm，（例如0.1 μm、3 μm、5 μm、8 μm、10 μm、12 μm、15 μm、18 μm、20 μm等），优选5 μm，宽度为0.3-0.7 μm，（例如0.3 μm、0.35 μm、0.4 μm、0.45 μm、0.5 μm、0.55 μm、0.6 μm、0.65 μm、0.7 μm等），优选0.5 μm，高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the shape of the second tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 μm, (for example, 0.1 μm, 3 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, etc.), preferably 5 μm, with a width of 0.3-0.7 μm, (for example, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, with a height of 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm .
在本发明中，所述第三钨层的形状为长方体，所述长方体的长度为0.1-20 μm，（例如0.1 μm、3 μm、5 μm、8 μm、10 μm、12 μm、15 μm、18 μm、20 μm等），优选5 μm，宽度为0.3-0.7 μm，（例如0.3 μm、0.35 μm、0.4 μm、0.45 μm、0.5 μm、0.55 μm、0.6 μm、0.65 μm、0.7 μm等），优选0.5 μm，高度为2.5-3 μm，（例如2.5 μm、2.55 μm、2.6 μm、2.65 μm、2.7 μm、2.75 μm、2.8 μm、2.85 μm、2.9 μm、2.95 μm、3 μm等），优选2.75 μm。In the present invention, the shape of the third tungsten layer is a rectangular parallelepiped, and the length of the rectangular parallelepiped is 0.1-20 μm, (for example, 0.1 μm, 3 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, etc.), preferably 5 μm, with a width of 0.3-0.7 μm, (for example, 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, with a height of 2.5-3 μm, (for example, 2.5 μm, 2.55 μm, 2.6 μm, 2.65 μm, 2.7 μm, 2.75 μm, 2.8 μm , 2.85 μm, 2.9 μm, 2.95 μm, 3 μm, etc.), preferably 2.75 μm.
在本发明中，所述派瑞林层和空心层均平行设置在导电层的下方，且与导电层之间的垂直距离为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the parylene layer and the hollow layer are both arranged in parallel below the conductive layer, and the vertical distance between the parylene layer and the conductive layer is 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm). μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述空心层包括第一空心层、环设在第一空心层外周缘的第二空心层以及设置在第二空心层外周缘的第三空心层。In the present invention, the hollow layer includes a first hollow layer, a second hollow layer ringed on the outer periphery of the first hollow layer, and a third hollow layer disposed on the outer periphery of the second hollow layer.
在本发明中，所述第一空心层的形状为圆柱体，所述圆柱体的底面半径为0-100 μm，（不包括0，例如1 μm、5 μm、10 μm、20 μm、30 μm、40 μm、50 μm、60 μm、70 μm、80 μm、90 μm、100 μm等），优选3 μm，侧面高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the shape of the first hollow layer is a cylinder, and the radius of the bottom surface of the cylinder is 0-100 μm, (not including 0, such as 1 μm, 5 μm, 10 μm, 20 μm, 30 μm , 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.), preferably 3 μm, the side height is 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm etc.), preferably 0.55 μm.
在本发明中，所述第二空心层的形状为空心圆柱体，所述空心圆柱体的底面内圆半径为2.5-205 μm，（例如2.5 μm、5 μm、10 μm、30 μm、50 μm、70 μm、100 μm、120 μm、150 μm、170 μm、200 μm、205 μm等），优选9 μm，底面外圆半径为3.5-395 μm，（例如3.5 μm、10 μm、50 μm、100 μm、150 μm、200 μm、250 μm、300 μm、350 μm、395 μm等），侧面高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the shape of the second hollow layer is a hollow cylinder, and the inner radius of the bottom surface of the hollow cylinder is 2.5-205 μm, (for example, 2.5 μm, 5 μm, 10 μm, 30 μm, 50 μm, 70 μm, 100 μm, 120 μm, 150 μm, 170 μm, 200 μm, 205 μm, etc.), preferably 9 μm, the outer radius of the bottom surface is 3.5-395 μm, (for example 3.5 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 395 μm, etc.), the side height is 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm , 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述第三空心层的形状为空心圆柱体，所述空心圆柱体的底面内圆半径为6.5-505 μm，（例如6.5 μm、30 μm、50 μm、100 μm、150 μm、200 μm、250 μm、300 μm、350 μm、400 μm、450 μm、505 μm等），优选19 μm，底面外圆半径为7.5-695 μm，（例如7.5 μm、30 μm、50 μm、100 μm、150 μm、200 μm、250 μm、300 μm、350 μm、400 μm、450 μm、500 μm、550 μm、600 μm、650 μm、695 μm等），优选23 μm，侧面高度为0.5-0.6 μm，（例如0.5 μm、0.52 μm、0.55 μm、0.57 μm、0.6 μm等），优选0.55 μm。In the present invention, the shape of the third hollow layer is a hollow cylinder, and the inner radius of the bottom surface of the hollow cylinder is 6.5-505 μm, (for example, 6.5 μm, 30 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 505 μm, etc.), preferably 19 μm, the outer radius of the bottom surface is 7.5-695 μm, (for example 7.5 μm, 30 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 695 μm, etc.), It is preferably 23 μm, and the side height is 0.5-0.6 μm, (for example, 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
在本发明中，所述派瑞林层设置在第三空心层的外周缘。In the present invention, the parylene layer is arranged on the outer periphery of the third hollow layer.
在本发明中，派瑞林的作用是堵住腐蚀孔，通常1 g派瑞林蒸镀5.5 h，获得水平表面的厚度为1 μm，派瑞林的含量根据需要进行调整。In the present invention, the role of parylene is to block the corroded holes, usually 1 g parylene evaporates 5.5 h, the thickness of the horizontal surface obtained is 1 μm, and the content of parylene is adjusted as needed.
本发明的目的之二在于提供一种如目的之一所述的换能器的制备方法，所述制备方法包括：将裸片依次通过一次刻蚀、镀膜以及二次刻蚀，得到所述换能器。The second object of the present invention is to provide a method for preparing the transducer as described in the first object. The preparation method includes: passing the bare chip through primary etching, coating and secondary etching in sequence to obtain the transducer. Energy device.
在本发明中，所述裸片是先通过Cadence virtuoso设计，而后进行生产得到的。In the present invention, the die is first designed by Cadence virtuoso and then produced.
本发明中，裸片的外观结构为长方体，垂直于长方体上下底面，沿上下底面的中心将裸片剖开，且剖面平行于长方体的一个侧面；其中图1为裸片结构的剖视图，如图1可知，裸片的结构包括非金属氧化物层、分布在非金属氧化物层A1内部的铝层A2（为了使图更简洁清楚，仅仅标识出了一个铝层，A2不仅仅是指图中标记出的铝层M1，而是指整个图1中的铝层M1-M5）和钨层A3（为了使图更简洁清楚，仅仅标识出了一个钨层，A3不仅仅是指图中标记出的钨层W1，而是指整个图1中的金属层W1-W4），以及位于非金属氧化物层A1上表面的氮化硅层A4；非金属氧化物层为二氧化硅层；铝层的层数为5层，自下而上依次包括M1层、M2层、M3层、M4层以及M5层；铝层可以连续分布，也可以间隔分布，若间隔分布，则位于同一水平面的几个部分统称为1个铝层，如M1仅包括一个铝层，M2包括从左至右间隔分布的6个铝层（可即为M21层、M22层、M23层、M24层、M25层、M26层），M3仅包括一个铝层，M4包括从左至右间隔分布的7个铝层（可即为M41层、M42层、M43层、M44层、M45层、M46层、M47层），M5仅包括一个铝层；钨层的层数为4层，自左至右依次包括W1层、W2层、W3层以及W4层；W1层用于垂直连接M5层和M21层，W2层用于垂直连接M3层和M45层，W3层用于垂直连接M3层和M46层，W4层用于垂直连接M1层和M47层。In the present invention, the appearance structure of the bare chip is a rectangular parallelepiped, which is perpendicular to the upper and lower bottom surfaces of the rectangular parallelepiped. The bare chip is cut along the center of the upper and lower bottom surfaces, and the section is parallel to one side of the rectangular parallelepiped; Figure 1 is a cross-sectional view of the bare chip structure, as shown in the figure. 1 It can be seen that the structure of the die includes a non-metal oxide layer and an aluminum layer A2 distributed inside the non-metal oxide layer A1 (in order to make the figure more concise and clear, only one aluminum layer is identified, and A2 is not just referring to the figure The marked aluminum layer M1 refers to the aluminum layers M1-M5 in Figure 1 as a whole and the tungsten layer A3 (in order to make the figure more concise and clear, only one tungsten layer is identified, and A3 is not just a mark in the figure The tungsten layer W1 refers to the metal layers W1-W4 in Figure 1) and the silicon nitride layer A4 on the upper surface of the non-metal oxide layer A1; the non-metal oxide layer is a silicon dioxide layer; the aluminum layer The number of layers is 5, from bottom to top including M1 layer, M2 layer, M3 layer, M4 layer and M5 layer; the aluminum layer can be continuously distributed or spaced apart. If spaced apart, it will be located on the same horizontal plane. The part is collectively referred to as one aluminum layer. For example, M1 includes only one aluminum layer, and M2 includes 6 aluminum layers spaced from left to right (that is, M21 layer, M22 layer, M23 layer, M24 layer, M25 layer, M26 layer ), M3 includes only one aluminum layer, M4 includes 7 aluminum layers spaced from left to right (that is, M41, M42, M43, M44, M45, M46, M47), M5 only Including an aluminum layer; the number of tungsten layers is 4 layers, from left to right including W1 layer, W2 layer, W3 layer and W4 layer; W1 layer is used to connect M5 layer and M21 layer vertically, and W2 layer is used for vertical connection The M3 layer and the M45 layer, the W3 layer is used to vertically connect the M3 layer and the M46 layer, and the W4 layer is used to vertically connect the M1 layer and the M47 layer.
在本发明中，涉及的长方体时，均以图1中从左往右的方向记为长度，从上往下的方向记为高度，从内向外的方向记为宽度。In the present invention, when referring to a rectangular parallelepiped, the direction from left to right in FIG. 1 is recorded as the length, the direction from top to bottom is recorded as the height, and the direction from the inside to the outside is recorded as the width.
在本发明中，所述一次刻蚀包括对裸片依次进行第一次反应离子深刻蚀和湿法刻蚀。In the present invention, the first etching includes the first deep reactive ion etching and wet etching of the die in sequence.
在本发明中，所述第一次反应离子深刻蚀为干法刻蚀。In the present invention, the first deep reactive ion etching is dry etching.
在本发明中，所述第一次反应离子深刻蚀为干法刻蚀。In the present invention, the first deep reactive ion etching is dry etching.
本发明中第一次反应离子深刻蚀属于干法刻蚀，对非金属化合物具有较好的垂直刻蚀能力，而对金属无腐蚀作用，利用其仅和非金属反应，而不和金属反应的特性，刻蚀过程自上而下会因铝层的存在自行停止。The first reactive ion deep etching in the present invention belongs to dry etching, which has good vertical etching ability for non-metal compounds, but has no corrosive effect on metals. It only reacts with non-metals and does not react with metals. Characteristic, the etching process will stop automatically due to the existence of the aluminum layer from top to bottom.
在本发明中，所述第一次反应离子深刻蚀的刻蚀参数包括：刻蚀气体为CHF 3和氧气的混合气体，RIE源的功率为50-80 W，例如50W、55W、60W、65W、70W、75W、80W等，刻蚀的均匀性为90-95%，例如90%、91%、92%、93%、94%、95%等。 In the present invention, the etching parameters of the first deep reactive ion etching include: the etching gas is a mixed gas of CHF 3 and oxygen, and the power of the RIE source is 50-80 W, such as 50W, 55W, 60W, 65W , 70W, 75W, 80W, etc., the uniformity of etching is 90-95%, such as 90%, 91%, 92%, 93%, 94%, 95%, etc.
在本发明中，所述CHF 3和氧气的混合气体中CHF 3和氧气的体积比为(3-6):1，例如3:1、3.5:1、4:1、4.5:1、5:1、5.5:1、6:1等。 In the present invention, the volume ratio of CHF 3 and oxygen in the mixed gas of CHF 3 and oxygen is (3-6):1, for example, 3:1, 3.5:1, 4:1, 4.5:1, 5: 1, 5.5:1, 6:1, etc.
在本发明中，所述第一次反应离子深刻蚀包括刻蚀除去裸片中M5层上表面的氮化硅层和二氧化硅层，以及垂直于M5层设置，且未有M5层保护的二氧化硅层，得到预制品A。In the present invention, the first deep reactive ion etching includes etching and removing the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the bare chip, as well as those arranged perpendicular to the M5 layer and not protected by the M5 layer. Silica layer to obtain preform A.
在本发明中，图2为经过第一次反应离子深刻蚀之后得到的预制品A的剖视图，如图2可知，通过第一次反应离子深刻蚀除去了原图1中的M5层上表面的氮化硅层和二氧化硅层，并且自上而下除去垂直M5设置，且没有M5层保护的二氧化硅层，得到预制品A的结构，在第一次反应离子深刻蚀过程中，反应离子仅和二氧化硅层反应，而不会和金属层反应，当自上而下腐蚀过程中，当腐蚀至M5金属层的地方，会自动停止腐蚀。In the present invention, FIG. 2 is a cross-sectional view of the preform A obtained after the first deep reactive ion etching. As shown in FIG. 2, the upper surface of the M5 layer in the original FIG. The silicon nitride layer and the silicon dioxide layer, and the silicon dioxide layer with vertical M5 setting and no M5 layer protection is removed from top to bottom to obtain the structure of preform A. In the first deep reactive ion etching process, the reaction Ions only react with the silicon dioxide layer, not the metal layer. During the top-down corrosion process, when it corrodes to the M5 metal layer, the corrosion will automatically stop.
在本发明中，所述湿法刻蚀包括酸刻蚀。In the present invention, the wet etching includes acid etching.
在湿法刻蚀过程中，凡是能与强酸接触到的铝层均被腐蚀掉，而非金属氧化物二氧化硅不与强酸反应，因此在湿法刻蚀过程中会出现自停止。During the wet etching process, all aluminum layers that can be in contact with strong acid are corroded away, and non-metal oxide silicon dioxide does not react with the strong acid, so self-stop occurs during the wet etching process.
在本发明中，所述酸刻蚀用酸液的制备方法包括：将磷酸、硝酸、冰醋酸以及去离子水按照体积比为1:1:2:16混合得到。In the present invention, the preparation method of the acid solution for acid etching includes: mixing phosphoric acid, nitric acid, glacial acetic acid, and deionized water in a volume ratio of 1:1:2:16.
在本发明中，所述湿法刻蚀包括刻蚀除去预制品A中W1层以及M2层，得到预制品B。In the present invention, the wet etching includes etching and removing the W1 layer and the M2 layer in the preform A to obtain the preform B.
在本发明中，图3为经过湿法刻蚀之后得到的预制品B的剖视图，如图3可知，在湿法刻蚀过程中，湿法刻蚀采用的酸液会和金属反应，而不和二氧化硅层反应，则在湿法过程中会先腐蚀除去W1层，W1层和M21层是相连的，在酸液腐蚀除去W1层后，酸液会继续腐蚀M21层，其中M21层、M22层、M23层、M24层、M25层以及M26层之间设置有微孔道，酸液会随着微孔道依次对M21层、M22层、M23层、M24层、M25层以及M26层进行腐蚀，得到预制品B；且由图3可以看出，在M2的那一层，由于微孔道的作用，减少了镂空的宽度，从而减小了镂空面积，避免了上薄膜粘滞到下薄膜上，从而形成了可振动的空腔。In the present invention, FIG. 3 is a cross-sectional view of the preform B obtained after wet etching. As shown in FIG. 3, during the wet etching process, the acid used in the wet etching will react with the metal instead of If it reacts with the silicon dioxide layer, the W1 layer will be etched and removed first in the wet process. The W1 layer and the M21 layer are connected. After the W1 layer is removed by the acid solution, the acid solution will continue to corrode the M21 layer. The M21 layer, The M22 layer, M23 layer, M24 layer, M25 layer, and M26 layer are provided with micro channels. The acid will follow the micro channels to the M21 layer, M22 layer, M23 layer, M24 layer, M25 layer and M26 layer. Corrosion to obtain preform B; and it can be seen from Figure 3 that in the M2 layer, due to the effect of the micro-channels, the width of the hollow is reduced, thereby reducing the hollow area and avoiding the adhesion of the upper film to the lower On the membrane, a vibrating cavity is formed.
在本发明中，所述镀膜包括在预制品B中二氧化硅层的上表面、刻蚀除去的W1层和刻蚀除去的部分M2层均沉积派瑞林层，得到预制品C。In the present invention, the coating includes depositing a parylene layer on the upper surface of the silicon dioxide layer in the preform B, the W1 layer removed by etching, and the part of the M2 layer removed by etching to obtain the preform C.
在本发明中，所述沉积的方式为化学气相沉积法。In the present invention, the method of deposition is chemical vapor deposition.
在本发明中，图4为经过化学气相沉积法得到的预制品C结构的剖视图，如图4所示，在预制品B中二氧化硅层的上表面、刻蚀除去的W1层和刻蚀除去的部分M2层均沉积派瑞林层，目的是为了堵住腐蚀的小孔，使得空腔可以为真空状态，其次是可以防止后续在水中工作时，水渗入器件内部导致器件的实效；派瑞林薄膜采用独特的真空气相沉积工艺制备，由活性小分子在基材表面“生长”出完全敷形的聚合物薄膜涂层，能够涂覆到各种形状的表面，包括尖锐的棱边、裂缝以及内表面，具有其他涂层难以比拟的优势。In the present invention, FIG. 4 is a cross-sectional view of the structure of the preform C obtained by chemical vapor deposition. As shown in FIG. 4, in the preform B, the upper surface of the silicon dioxide layer, the W1 layer removed by etching, and the etching Part of the removed M2 layer is deposited with Parylene layer, the purpose is to block the corroded pores, so that the cavity can be in a vacuum state, and secondly, to prevent subsequent work in water, water infiltration into the device, resulting in the actual effect of the device; Ruilin film is prepared by a unique vacuum vapor deposition process. A fully conformal polymer film coating is "grown" on the surface of the substrate by active small molecules, which can be coated on various shapes of surfaces, including sharp edges, The cracks and the inner surface have advantages that other coatings cannot match.
本发明中，化学气相沉积法包括：In the present invention, the chemical vapor deposition method includes:
（1）将预制品B在55-65℃条件下烘烤2-3 h去除预制品B表面以及内部的水汽；(1) Bake the preform B at 55-65℃ for 2-3 h to remove the moisture on the surface and inside of the preform B;
（2）用纯净水配置体积浓度为2-5%的Micro-90脱模剂，用不掉绒的棉布团蘸取脱模剂对涂覆机的沉积室内壁等不需要涂覆的地方全部涂抹一遍；(2) Prepare the Micro-90 release agent with a volume concentration of 2-5% with pure water, and dip a cotton cloth ball that does not lose lint to take the release agent to all the places that do not need to be coated, such as the deposition chamber wall of the coating machine Smear it again
（3）将去除完水汽的预制品B吊挂在涂覆机内的支架网板上，其次打开涂覆机的偶联剂加入口，用注射器注入3-6 mL的KH-570硅烷偶联剂，旋涂硅烷偶联剂，而后再注入派瑞林，旋涂派瑞林（按需要注入，通常1 g派瑞林形成的膜厚为1 μm），旋涂的时间共5.5 h。(3) Hang the preform B from which moisture has been removed on the stent plate in the coating machine, then open the coupling agent inlet of the coating machine, and inject 3-6 mL of KH-570 silane coupling with a syringe. Spin-coating silane coupling agent, then inject parylene, spin-coating parylene (inject as needed, usually 1 g parylene film thickness is 1 μm), the spin coating time is 5.5 h.
在本方面中，所述二次刻蚀为第二次反应离子深刻蚀。In this aspect, the second etching is the second deep reactive ion etching.
在本发明中，所述第二次反应离子深刻蚀为干法刻蚀。In the present invention, the second deep reactive ion etching is dry etching.
在本发明中，所述第二次反应离子深刻蚀的刻蚀参数包括：刻蚀气体为CHF 3和氧气的混合气体，RIE源的功率为50-80 W，例如50W、55W、60W、65W、70W、75W、80W等，刻蚀的均匀性为90-95%，例如90%、91%、92%、93%、94%、95%等。 In the present invention, the etching parameters of the second deep reactive ion etching include: the etching gas is a mixed gas of CHF 3 and oxygen, and the power of the RIE source is 50-80 W, such as 50W, 55W, 60W, 65W , 70W, 75W, 80W, etc., the uniformity of etching is 90-95%, such as 90%, 91%, 92%, 93%, 94%, 95%, etc.
在本发明中，所述CHF 3和氧气的混合气体中CHF 3和氧气的体积比为(3-6):1，例如3:1、3.5:1、4:1、4.5:1、5:1、5.5:1、6:1等。 In the present invention, the volume ratio of CHF 3 and oxygen in the mixed gas of CHF 3 and oxygen is (3-6):1, for example, 3:1, 3.5:1, 4:1, 4.5:1, 5: 1, 5.5:1, 6:1, etc.
在本发明中，所述第二次反应离子深刻蚀包括除去预制品C中M4层上表面的派瑞西林层和二氧化硅层，以及垂直于M4层设置，且未有M4层和M3层保护的派瑞西林层和二氧化硅层，得到所述换能器。In the present invention, the second reactive ion deep etching includes removing the paricillin layer and the silicon dioxide layer on the upper surface of the M4 layer in the preform C, and is arranged perpendicular to the M4 layer, and there is no M4 layer and M3 layer The protected paricillin layer and silicon dioxide layer, to obtain the transducer.
在本发明中，图5为经过第二次反应离子深刻蚀得到的换能器结构的剖视图，如图5可知，采用第二次反应离子深刻蚀除去预制品C中M4层上表面的派瑞西林层和二氧化硅层，以及垂直于M4层设置，且未有M4层和M3层保护的派瑞西林层和二氧化硅层。In the present invention, FIG. 5 is a cross-sectional view of the transducer structure obtained by the second deep etching of reactive ion, as shown in FIG. The cillin layer and silicon dioxide layer, and the parecillin layer and silicon dioxide layer which are arranged perpendicular to the M4 layer and are not protected by the M4 layer and the M3 layer.
在本发明中，采用反应离子深刻蚀和湿法刻蚀配合使用，便于在制备过程中自停止，避免了光刻等复杂刻蚀方法的使用，且能保证工艺操作过程中的可重复性；此外在M2中设置微孔道，减少了镂空的宽度，从而减小了镂空面积，避免了上薄膜粘滞到下薄膜上，从而形成了可振动的空腔。In the present invention, reactive ion deep etching and wet etching are used in conjunction to facilitate self-stop during the preparation process, avoid the use of complex etching methods such as photolithography, and ensure the repeatability in the process operation; In addition, micro-holes are provided in the M2 to reduce the width of the hollow, thereby reducing the hollow area, and avoiding the upper film from sticking to the lower film, thereby forming a cavity that can be vibrated.
本发明的目的之三在于提供一种如目的之一所述的换能器在超声成像中的应用。The third object of the present invention is to provide an application of the transducer as described in the first object in ultrasound imaging.
有益效果Beneficial effect
相对于现有技术，本发明具有以下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
本发明中的换能器在具有较好超声强度以及超声频率的前提下，能够大大降低器件面积，便于换能器阵列化；在制备过程中采用反应离子深刻蚀和湿法刻蚀配合使用，便于在制备过程中自停止，避免了光刻等复杂刻蚀方法的使用，且能保证工艺操作过程中的可重复性；此外，在M2中设置微孔道，减少了镂空的宽度，从而减小了镂空面积，避免了上薄膜粘滞到下薄膜上，从而形成了可振动的空腔。Under the premise of good ultrasonic intensity and ultrasonic frequency, the transducer of the present invention can greatly reduce the device area and facilitate the arraying of the transducer; in the preparation process, reactive ion deep etching and wet etching are used together, It is convenient to stop automatically during the preparation process, avoids the use of complex etching methods such as photolithography, and can ensure the repeatability of the process operation; in addition, the micro-channels are set in the M2 to reduce the width of the hollow, thereby reducing The hollow area is small, and the upper film is prevented from sticking to the lower film, thereby forming a vibrating cavity.
附图说明Description of the drawings
图1是发明内容中裸片结构的剖视图；Figure 1 is a cross-sectional view of the bare chip structure in the summary of the invention;
其中，A1为非金属氧化物层，A2为铝层，A3为钨层，A4为氮化硅层，M1-M5均为铝层，W1-W4均为钨层；Among them, A1 is a non-metal oxide layer, A2 is an aluminum layer, A3 is a tungsten layer, A4 is a silicon nitride layer, M1-M5 are all aluminum layers, and W1-W4 are all tungsten layers;
图2为发明内容中预制品A结构的剖视图；Figure 2 is a cross-sectional view of the structure of the preform A in the summary of the invention;
图3为发明内容中预制品B结构的剖视图；Figure 3 is a cross-sectional view of the preform B structure in the summary of the invention;
图4为发明内容中预制品C结构的剖视图；4 is a cross-sectional view of the structure of the preform C in the summary of the invention;
图5为发明内容中换能器结构的剖视图；Figure 5 is a cross-sectional view of the transducer structure in the summary of the invention;
图6为实施方式中换能器的俯视图；Figure 6 is a top view of the transducer in the embodiment;
图7为图6沿AA’的剖视图；Figure 7 is a cross-sectional view along AA' of Figure 6;
其中，11为上极板层，12为第一引线层，21为下极板层，211为金属层，212为下绝缘层，22为第二引线层，31为绝缘层，32为派瑞林层，33为空心层，341为铝层，342为第一钨层，343为第二钨层，344为第三钨层。Among them, 11 is the upper electrode plate layer, 12 is the first lead layer, 21 is the lower electrode plate layer, 211 is the metal layer, 212 is the lower insulating layer, 22 is the second lead layer, 31 is the insulating layer, and 32 is the Perry In the forest layer, 33 is a hollow layer, 341 is an aluminum layer, 342 is a first tungsten layer, 343 is a second tungsten layer, and 344 is a third tungsten layer.
本发明的实施方式Embodiments of the present invention
下面通过具体实施方式来进一步说明本发明的技术方案。本领域技术人员应该明了，所述实施例仅仅是帮助理解本发明，不应视为对本发明的具体限制。The technical solution of the present invention will be further explained by specific embodiments below. It should be understood by those skilled in the art that the described embodiments are only to help understand the present invention and should not be regarded as specific limitations to the present invention.
本实施方式提供一种换能器，图6为换能器的俯视图，图7为图6沿AA’的剖视图，从图6和图7的结合可知，换能器包括第一组件、第二组件以及填充在第一组件和第二组件之间的第三组件，第一组件包括上极板层11和第一引线层12，第二组件包括下级板层21和第二引线层22，第三组件包括绝缘层31以及位于绝缘层内部的派瑞林层32、空心层33以及导电层；导电层包括铝层341以及垂直于铝层341垂直设置的第一钨层342、第二钨层343、第三钨层344；上极板层11、第一引线层12和第二引线层22均悬设在下级板层21的上方；上极板层11和第一引线层12通过第一钨层342、铝层341以及第二铝层343相连；下级板层21和第二引线层22通过第三钨层344相连；其中上极板层11包括第一金属层、环设在第一金属层外周缘的第二金属层以及环设在第二金属层外周缘的第三金属层；下级板层21包括金属层211以及位于金属层211下表面的下绝缘层212；派瑞林层32和空心层33均平行设置在铝层341的下方；空心层33包括第一空心层、环设在第一空心层外周缘的第二空心层以及环设在第二空心层外周缘的第三空心层；派瑞林层32设置在第三空心层的外周缘。This embodiment provides a transducer. FIG. 6 is a top view of the transducer, and FIG. 7 is a cross-sectional view of FIG. 6 along AA'. It can be seen from the combination of FIG. 6 and FIG. Assembly and a third assembly filled between the first assembly and the second assembly. The first assembly includes an upper plate layer 11 and a first lead layer 12, and the second assembly includes a lower plate layer 21 and a second lead layer 22. The three components include an insulating layer 31, a parylene layer 32, a hollow layer 33, and a conductive layer located inside the insulating layer; the conductive layer includes an aluminum layer 341, and a first tungsten layer 342 and a second tungsten layer arranged perpendicular to the aluminum layer 341 343. The third tungsten layer 344; the upper electrode plate layer 11, the first lead layer 12 and the second lead layer 22 are all suspended above the lower plate layer 21; the upper electrode plate layer 11 and the first lead layer 12 pass through the first The tungsten layer 342, the aluminum layer 341, and the second aluminum layer 343 are connected; the lower plate layer 21 and the second lead layer 22 are connected through the third tungsten layer 344; wherein the upper plate layer 11 includes a first metal layer, which is arranged around the first metal layer. The second metal layer on the outer periphery of the metal layer and the third metal layer surrounding the outer periphery of the second metal layer; the lower plate layer 21 includes a metal layer 211 and a lower insulating layer 212 located on the lower surface of the metal layer 211; a parylene layer 32 and the hollow layer 33 are both arranged in parallel below the aluminum layer 341; the hollow layer 33 includes a first hollow layer, a second hollow layer ringed on the outer periphery of the first hollow layer, and a second hollow layer ringed on the outer periphery of the second hollow layer. Three hollow layers; Parylene layer 32 is arranged on the outer periphery of the third hollow layer.
实施例1Example 1
本实施例中，上极板层和第一引线层的材质为铝，第一金属层的形状为实心圆柱体，底面半径为5 μm，侧面高度为0.55 μm；第二金属层的形状为空心圆柱体，底面外圆半径为15 μm，底面内圆半径为7 μm，侧面高度为0.55 μm；第三金属层的形状为空心圆柱体，底面外圆半径为25 μm，底面内圆半径为17 μm，侧面高度为0.55 μm；第一引线层的形状为长方体，长方体的长度为20 μm，宽度为0.5 μm，高度为0.55 μm；下级板金属层的材质为铝，形状为长方体，长度为300 μm，宽度为300 μm，高度为0.55 μm；下级板的下绝缘层的材质为二氧化硅，形状为长方体，长度为300 μm，宽度为300 μm，高度为1.65μm；第二引线层的材质为铝，形状为长方体，长方体的长度为20 μm，宽度为0.5 μm，高度为0.55 μm；绝缘层的材质为二氧化硅，绝缘层填充在上极板层、第一引线层、第二引线层与下极板层之间；绝缘层中铝层的形状为长方体，长方体的长度为8 μm，宽度为0.5 μm，高度为0.55 μm；第一钨层的形状为长方体，长方体的长度为5 μm，宽度为0.5 μm，高度为0.55 μm，第二钨层的形状为长方体，长方体的长度为5 μm，宽度为0.5 μm，高度为0.55 μm，第三钨层的形状为长方体，长方体的长度为5 μm，宽度为0.5 μm，高度为2.75 μm；第一空心层的形状为圆柱体，底面半径为3 μm，侧面高度为0.55 μm；第二空心层的形状为空心圆柱体，底面外圆半径为13 μm，内圆半径为9 μm，侧面高度为0.55 μm；第三空心层的形状为空心圆柱体，底面外圆半径为23 μm，内圆半径为19 μm，侧面高度为0.55 μm。In this embodiment, the material of the upper electrode plate layer and the first lead layer is aluminum, the shape of the first metal layer is a solid cylinder, the radius of the bottom surface is 5 μm, and the height of the side surface is 0.55 μm; the shape of the second metal layer is hollow Cylinder with a bottom outer radius of 15 μm, a bottom inner radius of 7 μm, and a side height of 0.55 μm; the shape of the third metal layer is a hollow cylinder with a bottom outer radius of 25 μm and a bottom inner radius of 17 μm, the side height is 0.55 μm; the shape of the first lead layer is a cuboid, the length of the cuboid is 20 μm, the width is 0.5 μm, and the height is 0.55 μm; the material of the lower board metal layer is aluminum, the shape is a cuboid, and the length is 300 μm, the width is 300 μm, the height is 0.55 μm; the material of the lower insulating layer of the inferior board is silicon dioxide, the shape is rectangular, the length is 300 μm, the width is 300 μm, and the height is 1.65 μm; the material of the second lead layer It is aluminum with a rectangular parallelepiped shape. The length of the rectangular parallelepiped is 20 μm, the width is 0.5 μm, and the height is 0.55 μm; the material of the insulating layer is silicon dioxide, and the insulating layer is filled on the upper plate layer, the first lead layer, and the second lead The shape of the aluminum layer in the insulating layer is a cuboid, the length of the cuboid is 8 μm, the width is 0.5 μm, and the height is 0.55 μm; the shape of the first tungsten layer is a cuboid, and the length of the cuboid is 5. μm, the width is 0.5 μm, the height is 0.55 μm, the shape of the second tungsten layer is a cuboid, the length of the cuboid is 5 μm, the width is 0.5 μm, and the height is 0.55 μm, the shape of the third tungsten layer is a cuboid, the length of the cuboid The shape of the first hollow layer is 5 μm, the width is 0.5 μm, and the height is 2.75 μm; the shape of the first hollow layer is a cylinder with a bottom radius of 3 μm and a side height of 0.55 μm; the shape of the second hollow layer is a hollow cylinder with an outer bottom surface The radius is 13 μm, the inner radius is 9 μm, and the side height is 0.55 μm; the shape of the third hollow layer is a hollow cylinder with a bottom outer radius of 23 μm, an inner radius of 19 μm, and a side height of 0.55 μm.
本实施例还提供一种换能器的制备方法，所述制备方法包括如下步骤：This embodiment also provides a method for manufacturing a transducer, which includes the following steps:
第一步：通过Cadence virtuoso设计图纸，而后请晶圆代工厂生产，并流片得到裸片；The first step: design drawings through Cadence virtuoso, and then ask the foundry to produce, and tape out the die;
本实施例中，裸片的外观结构为长方体，垂直于长方体上下底面，沿上下底面的中心将裸片剖开，且剖面平行于长方体的一个侧面；其中图1为裸片结构的剖视图，如图1可知，裸片的结构包括非金属氧化物层、分布在非金属氧化物层A1内部的铝层A2（为了使图更简洁清楚，仅仅标识出了一个铝层，A2不仅仅是指图中标记出的铝层M1，而是指整个图1中的铝层M1-M5）和钨层A3（为了使图更简洁清楚，仅仅标识出了一个钨层，A3不仅仅是指图中标记出的钨层W1，而是指整个图1中的钨层W1-W4），以及位于非金属氧化物层A1上表面的氮化硅层A4；非金属氧化物层为二氧化硅层；铝层的层数为5层，自下而上依次包括M1层、M2层、M3层、M4层以及M5层；铝层可以连续分布，也可以间隔分布，若间隔分布，则位于同一水平面的几个部分统称为1个铝层，如M1仅包括一个铝层，M2包括从左至右间隔分布的6个铝层（可即为M21层、M22层、M23层、M24层、M25层、M26层），M3仅包括一个铝层，M4包括从左至右间隔分布的7个铝层（可即为M41层、M42层、M43层、M44层、M45层、M46层、M47层），M5仅包括一个铝层；钨层的层数为4层，自左至右依次包括W1层、W2层、W3层以及W4层；W1层用于垂直连接M5层和M21层，W2层用于垂直连接M3层和M45层，W3层用于垂直连接M3层和M46层，W4层用于垂直连接M1层和M47层。In this embodiment, the appearance structure of the bare chip is a rectangular parallelepiped, which is perpendicular to the upper and lower bottom surfaces of the rectangular parallelepiped. The bare chip is cut along the center of the upper and lower bottom surfaces, and the cross section is parallel to one side of the rectangular parallelepiped; Figure 1 is a cross-sectional view of the bare chip structure, such as Figure 1 shows that the structure of the die includes a non-metal oxide layer and an aluminum layer A2 distributed inside the non-metal oxide layer A1 (In order to make the figure more concise and clear, only one aluminum layer is identified, and A2 is not just a reference to the figure. The aluminum layer M1 marked in refers to the aluminum layer M1-M5 in Figure 1 and the tungsten layer A3 (in order to make the figure more concise and clear, only one tungsten layer is identified, and A3 is not just a reference to the mark in the figure. The resulting tungsten layer W1 refers to the entire tungsten layer W1-W4 in Figure 1) and the silicon nitride layer A4 located on the upper surface of the non-metal oxide layer A1; the non-metal oxide layer is a silicon dioxide layer; aluminum The number of layers is 5, from bottom to top including M1 layer, M2 layer, M3 layer, M4 layer and M5 layer. The aluminum layer can be distributed continuously or spaced apart. If spaced apart, it will be located on the same horizontal plane. These parts are collectively referred to as one aluminum layer. For example, M1 includes only one aluminum layer, and M2 includes six aluminum layers spaced from left to right (that is, M21 layer, M22 layer, M23 layer, M24 layer, M25 layer, M26 Layer), M3 includes only one aluminum layer, M4 includes 7 aluminum layers spaced from left to right (which can be M41 layer, M42 layer, M43 layer, M44 layer, M45 layer, M46 layer, M47 layer), M5 Only one aluminum layer is included; the number of tungsten layers is 4, including W1, W2, W3, and W4 layers from left to right; W1 layer is used to connect M5 and M21 layers vertically, and W2 layer is used for vertical The M3 layer and the M45 layer are connected, the W3 layer is used to vertically connect the M3 layer and the M46 layer, and the W4 layer is used to vertically connect the M1 layer and the M47 layer.
第二步：对刻蚀除去第一步得到的裸片中M5层上表面的氮化硅层和二氧化硅层，以及垂直于M5层设置，且未有M5层保护的二氧化硅层，得到预制品A；The second step: the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer of the bare chip obtained in the first step are removed by etching, and the silicon dioxide layer that is arranged perpendicular to the M5 layer and is not protected by the M5 layer, Get preform A;
在本实施例中，第一次反应离子深刻蚀的刻蚀参数包括：刻蚀气体为体积比是4:1的CHF 3和氧气的混合气体，RIE源的功率为60 W，刻蚀的均匀性为93%。 In this embodiment, the etching parameters of the first deep reactive ion etching include: the etching gas is a mixture of CHF 3 and oxygen with a volume ratio of 4:1, the power of the RIE source is 60 W, and the etching is uniform Sex is 93%.
在本实施例中，将裸片进行第一次反应离子深刻蚀，其中发明内容中图2为预制品A的剖视图，通过第一次反应离子深刻蚀除去了原图1中的M5层上表面的氮化硅层和二氧化硅层，并且自上而下除去垂直M5设置，且没有M5层保护的二氧化硅层，得到预制品A的结构，在第一次反应离子深刻蚀过程中，反应离子仅和二氧化硅层反应，而不会和金属层反应，当自上而下腐蚀过程中，当腐蚀至M5金属层的地方，会自动停止腐蚀。In this embodiment, the die is subjected to the first deep reactive ion etching. Figure 2 in the content of the invention is a cross-sectional view of the preform A. The upper surface of the M5 layer in the original figure 1 is removed by the first deep reactive ion etching. The silicon nitride layer and silicon dioxide layer are removed from top to bottom, and the silicon dioxide layer with vertical M5 setting and no M5 layer protection is removed to obtain the structure of preform A. In the first deep reactive ion etching process, The reactive ions only react with the silicon dioxide layer, not the metal layer. During the top-down corrosion process, when it corrodes to the M5 metal layer, the corrosion will automatically stop.
第三步：将第二步得到的预制品A进行湿法蚀刻，得到预制品B；The third step: wet etching the preform A obtained in the second step to obtain the preform B;
在本实施例中，湿法刻蚀用酸的制备方法包括：将磷酸、硝酸、冰醋酸以及去离子水按照体积比为1:1:2:16混合，得到酸液，满足和铝反应，而不和二氧化硅反应，从而较好的去除金属层。In this embodiment, the preparation method of the acid for wet etching includes: mixing phosphoric acid, nitric acid, glacial acetic acid, and deionized water in a volume ratio of 1:1:2:16 to obtain an acid solution that satisfies the reaction with aluminum. Instead of reacting with silicon dioxide, the metal layer can be removed better.
在本实施例中，将预制品A进行湿法刻蚀，得到预制品B，其中发明内容中图3为预制品B的剖视图，如图3可知，在湿法刻蚀过程中，湿法刻蚀采用的酸液会和金属反应，而不和二氧化硅层反应，则在湿法过程中会先腐蚀除去W1层，W1层和M21层是相连的，在酸液腐蚀除去W1层后，酸液会继续腐蚀M21层，其中M21层、M22层、M23层、M24层、M25层以及M26层之间设置有微孔道，酸液会随着微孔道依次对M21层、M22层、M23层、M24层、M25层以及M26层进行腐蚀，得到预制品B；且由图3可以看出，在M2的那一层，由于微孔道的作用，减少了镂空的宽度，从而减小了镂空面积，避免了上薄膜粘滞到下薄膜上，从而形成了可振动的空腔。In this embodiment, preform A is wet-etched to obtain preform B. In the content of the invention, FIG. 3 is a cross-sectional view of preform B. As shown in FIG. 3, during the wet etching process, wet etching The acid used in the etching will react with the metal instead of the silicon dioxide layer. During the wet process, the W1 layer will be etched and removed. The W1 layer and the M21 layer are connected. After the W1 layer is removed by the acid etching, The acid solution will continue to corrode the M21 layer. Among them, the M21 layer, the M22 layer, the M23 layer, the M24 layer, the M25 layer and the M26 layer are provided with microchannels. The acid solution will follow the microchannels to the M21 layer, M22 layer, The M23, M24, M25, and M26 layers are etched to obtain preform B; and it can be seen from Figure 3 that in the M2 layer, due to the effect of the micro-channels, the width of the hollow is reduced, thereby reducing The hollow area is reduced, and the upper film is prevented from sticking to the lower film, thereby forming a vibrating cavity.
第四步：在第三步得到的预制品B中二氧化硅层的上表面、刻蚀除去的W1层和刻蚀除去的部分M2层均采用化学气相沉积法沉积派瑞林层，得到预制品C；Step 4: In the preform B obtained in the third step, the upper surface of the silicon dioxide layer, the W1 layer removed by etching, and the part of the M2 layer removed by etching are all deposited by chemical vapor deposition to deposit the parylene layer to obtain the preform Product C;
本实施例中，化学气相沉积法包括如下步骤：In this embodiment, the chemical vapor deposition method includes the following steps:
S1、将预制品B在60℃条件下烘烤3 h去除预制品B表面以及内部的水汽；S1. Bake the preform B at 60°C for 3 hours to remove the moisture on the surface and inside of the preform B;
S2、用纯净水配置体积浓度为5%的Micro-90脱模剂，用不掉绒的棉布团蘸取脱模剂对涂覆机的沉积室内壁等不需要涂覆的地方全部涂抹一遍；S2. Prepare Micro-90 release agent with a volume concentration of 5% with purified water, and use a cotton cloth that does not lose lint to take the release agent and apply it to the deposition chamber of the coating machine and other areas that do not need to be coated;
S3、将去除完水汽的预制品B吊挂在涂覆机内的支架网板上，其次打开涂覆机的偶联剂加入口，用注射器注入5 mL的KH-570硅烷偶联剂，旋涂硅烷偶联剂（旋涂时间2 h），而后再注入派瑞林，旋涂派瑞林（按需要注入，通常1 g派瑞林形成的膜厚为1 μm，旋涂时间3.5 h），旋涂的时间共5.5 h。S3. Hang the preform B from which moisture has been removed on the stent plate in the coating machine, then open the coupling agent inlet of the coating machine, and inject 5 mL of KH-570 silane coupling agent with a syringe, and spin it. Apply silane coupling agent (spin coating time 2 h), then inject parylene, spin coating parylene (inject as needed, usually 1 g parylene film thickness is 1 μm, spin coating time 3.5 h) , The total time for spin coating is 5.5 h.
在本实施例中，图4为预制品C结构的剖视图，如图4所示，在预制品B中二氧化硅层的上表面、刻蚀除去的W1层和刻蚀除去的部分M2层均沉积派瑞林层，目的是为了堵住腐蚀的小孔，使得空腔可以为真空状态，其次是可以防止后续在水中工作时，水渗入器件内部导致器件的实效；派瑞林薄膜采用独特的真空气相沉积工艺制备，由活性小分子在基材表面“生长”出完全敷形的聚合物薄膜涂层，能够涂覆到各种形状的表面，包括尖锐的棱边、裂缝以及内表面，具有其他涂层难以比拟的优势。In this embodiment, FIG. 4 is a cross-sectional view of the structure of the preform C. As shown in FIG. The purpose of depositing the parylene layer is to block the corroded pores, so that the cavity can be in a vacuum state, and secondly, to prevent water from penetrating into the device during subsequent work in water, resulting in the actual effect of the device; the parylene film uses a unique Prepared by vacuum vapor deposition process, a fully conformal polymer film coating is "grown" on the surface of the substrate from active small molecules, which can be coated on various shapes of surfaces, including sharp edges, cracks and inner surfaces. Unmatched advantages of other coatings.
第五步：将第四步得到的预制品C进行第二次反应离子深刻蚀，得到换能器。The fifth step: the preform C obtained in the fourth step is subjected to the second reactive ion deep etching to obtain the transducer.
本实施例中，第二次反应离子深刻蚀的刻蚀参数包括：刻蚀气体为体积比是4:1的CHF 3和氧气的混合气体，RIE源的功率为60 W，刻蚀的均匀性为93%，具体参数的数值本实施方式不做具体限定，本领域技术人员可根据实际需要进行调整。 In this embodiment, the etching parameters of the second reactive ion deep etching include: the etching gas is a mixture of CHF 3 and oxygen with a volume ratio of 4:1, the power of the RIE source is 60 W, and the etching uniformity It is 93%, and the value of the specific parameter is not specifically limited in this embodiment, and those skilled in the art can adjust it according to actual needs.
本实施例中，图5为换能器结构的剖视图，如图5可知，采用第二次反应离子深刻蚀除去预制品C中M4层上表面的派瑞西林层和二氧化硅层，以及垂直于M4层设置，且未有M4层和M3层保护的派瑞西林层和二氧化硅层。In this embodiment, FIG. 5 is a cross-sectional view of the transducer structure. As shown in FIG. 5, the second reactive ion deep etching is used to remove the paricillin layer and the silicon dioxide layer on the upper surface of the M4 layer in the preform C, and the vertical It is set on the M4 layer and is not protected by the M4 layer and the M3 layer of Parecillin and silicon dioxide layer.
对本实施例1得到的换能器进行性能测试，测试标准：利用标准超声探头作为接收端，测试研制的换能器的发射性能；利用阻抗分析仪，添加交流信号为1V，直流信号40V，扫描范围[20KHz-1MHz]，测得的超声强度为6.5 W/cm 2，超声频率为2000 KHz，阵列化测试符合标准。 The performance test of the transducer obtained in Example 1 was carried out. The test standard was as follows: a standard ultrasonic probe was used as the receiving end to test the transmitting performance of the developed transducer; an impedance analyzer was used to add an AC signal of 1V, a DC signal of 40V, and scanning Range [20KHz-1MHz], the measured ultrasonic intensity is 6.5 W/cm 2 , the ultrasonic frequency is 2000 KHz, and the array test meets the standard.
实施例2Example 2
本实施例中，上极板层和第一引线层的材质为铝，第一金属层的形状为实心圆柱体，底面半径为1μm，侧面高度为0.5μm；第二金属层的形状为空心圆柱体，底面外圆半径为4μm，底面内圆半径为2μm，侧面高度为0.6 μm；第三金属层的形状为空心圆柱体，底面外圆半径为8μm，底面内圆半径为6μm，侧面高度为0.6 μm；第一引线层的形状为长方体，长方体的长度为15 μm，宽度为0.3 μm，高度为0.5 μm；下级板金属层的材质为铝，形状为长方体，长度为250 μm，宽度为250 μm，高度为0.5 μm；下级板的下绝缘层的材质为二氧化硅，形状为长方体，长度为250 μm，宽度为250 μm，高度为1.65μm；第二引线层的材质为铝；绝缘层的材质为二氧化硅，绝缘层填充在上极板层、第一引线层、第二引线层与下极板层之间；绝缘层中铝层的形状为长方体，长方体的长度为2 μm，宽度为0.3 μm，高度为0.5 μm；第一钨层的形状为长方体，所述长方体的长度为0.1μm，宽度为0.3 μm，高度为0.5 μm；第二钨层的形状为长方体，所述长方体的长度为0.1μm，宽度为0.3 μm，高度为0.5 μm；第三钨层的形状为长方体，所述长方体的长度为0.1μm，宽度为0.3 μm，高度为0.5 μm；；第一空心层的形状为圆柱体，底面半径为0.8μm，侧面高度为0.5 μm；第二空心层的形状为空心圆柱体，底面外圆半径为3.5 μm，内圆半径为2.5 μm，侧面高度为0.5 μm；第三空心层的形状为空心圆柱体，底面外圆半径为7.5 μm，内圆半径为6.5 μm，侧面高度为0.5 μm。In this embodiment, the material of the upper electrode plate layer and the first lead layer is aluminum, the shape of the first metal layer is a solid cylinder, the radius of the bottom surface is 1 μm, and the height of the side surface is 0.5 μm; the shape of the second metal layer is a hollow cylinder The outer radius of the bottom surface is 4 μm, the inner radius of the bottom surface is 2 μm, and the height of the side surface is 0.6 μm; the shape of the third metal layer is a hollow cylinder, the outer radius of the bottom surface is 8 μm, the inner radius of the bottom surface is 6 μm, and the height of the side surface is 0.6 μm; the shape of the first lead layer is a cuboid, the length of the cuboid is 15 μm, the width is 0.3 μm, and the height is 0.5 μm; the material of the lower board metal layer is aluminum, the shape is a cuboid, the length is 250 μm, and the width is 250 μm, the height is 0.5 μm; the material of the lower insulating layer of the inferior board is silicon dioxide, the shape is a rectangular parallelepiped, the length is 250 μm, the width is 250 μm, and the height is 1.65 μm; the material of the second lead layer is aluminum; the insulating layer The material is silicon dioxide, and the insulating layer is filled between the upper plate layer, the first lead layer, the second lead layer and the lower plate layer; the shape of the aluminum layer in the insulating layer is a cuboid, and the length of the cuboid is 2 μm, The width is 0.3 μm and the height is 0.5 μm; the shape of the first tungsten layer is a cuboid, the length of the cuboid is 0.1 μm, the width is 0.3 μm, and the height is 0.5 μm; the shape of the second tungsten layer is a cuboid, the cuboid The length of the third tungsten layer is 0.1 μm, the width is 0.3 μm, and the height is 0.5 μm; the shape of the third tungsten layer is a cuboid, the length of the cuboid is 0.1 μm, the width is 0.3 μm, and the height is 0.5 μm; The shape is a cylinder with a bottom radius of 0.8 μm and a side height of 0.5 μm; the shape of the second hollow layer is a hollow cylinder with a bottom outer radius of 3.5 μm, an inner radius of 2.5 μm, and a side height of 0.5 μm; The shape of the three hollow layers is a hollow cylinder, the outer radius of the bottom surface is 7.5 μm, the inner radius is 6.5 μm, and the height of the side surface is 0.5 μm.
本实施例还提供一种换能器的制备方法，制备方法与实施例1的区别仅在于第一次反应离子深刻蚀和第二次反应离子深刻蚀的刻蚀参数包括：刻蚀气体为体积比为3:1的CHF 3和氧气的混合气体，RIE源的功率为50 W，刻蚀的均匀性为90%。 This embodiment also provides a method for preparing a transducer. The difference between the preparation method and embodiment 1 is only that the etching parameters of the first deep reactive ion etching and the second deep reactive ion etching include: the etching gas is volume A mixture of CHF 3 and oxygen gas with a ratio of 3:1, the power of the RIE source is 50 W, and the etching uniformity is 90%.
对本实施例2得到的换能器进行性能测试，测试标准与实施例1的测试标准相同，测得的超声强度为7 W/cm 2，超声频率为2000 KHz，阵列化测试符合标准。 The performance test of the transducer obtained in Example 2 is performed. The test standard is the same as that of Example 1. The measured ultrasonic intensity is 7 W/cm 2 , the ultrasonic frequency is 2000 KHz, and the array test meets the standard.
实施例3Example 3
本实施例中，上极板层和第一引线层的材质为铝，第一金属层的形状为实心圆柱体，底面半径为100 μm，侧面高度为0.6 μm；第二金属层的形状为空心圆柱体，底面外圆半径为400 μm，底面内圆半径为200 μm，侧面高度为0.6 μm；第三金属层的形状为空心圆柱体，底面外圆半径为700 μm，底面内圆半径为500 μm，侧面高度为0.6 μm；第一引线层的形状为长方体，长方体的长度为25 μm，宽度为0.7 μm，高度为0.6 μm；下级板金属层的材质为铝，形状为长方体，长度为350 μm，宽度为350 μm，高度为0.6 μm；下级板的下绝缘层的材质为二氧化硅，形状为长方体，长度为350 μm，宽度为350 μm，高度为0.6 μm；第二引线层的材质为铝，形状为长方体，长方体的长度为25 μm，宽度为0.7 μm，高度为0.6 μm；绝缘层的材质为二氧化硅，绝缘层填充在上极板层、第一引线层、第二引线层与下极板层之间；绝缘层中铝层的形状为长方体，长方体的长度为100 μm，宽度为0.7 μm，高度为0.6 μm；第一钨层的形状为长方体，长方体的长度为20μm，宽度为0.7 μm，高度为0.6 μm；第二钨层的形状为长方体，长方体的长度为20μm，宽度为0.7 μm，高度为0.6 μm；第三钨层的形状为长方体，长方体的长度为20μm，宽度为0.7 μm，高度为3μm；第一空心层的形状为圆柱体，底面半径为80μm，侧面高度为0.6 μm；第二空心层的形状为空心圆柱体，底面外圆半径为395 μm，内圆半径为205 μm，侧面高度为0.6 μm；第三空心层的形状为空心圆柱体，底面外圆半径为695 μm，内圆半径为505 μm，侧面高度为0.6 μm。In this embodiment, the material of the upper electrode plate layer and the first lead layer is aluminum, the shape of the first metal layer is a solid cylinder, the radius of the bottom surface is 100 μm, and the height of the side surface is 0.6 μm; the shape of the second metal layer is hollow Cylinder, the outer radius of the bottom surface is 400 μm, the inner radius of the bottom surface is 200 μm, and the side height is 0.6 μm; the shape of the third metal layer is a hollow cylinder, the outer radius of the bottom surface is 700 μm, and the inner radius of the bottom surface is 500 μm, the side height is 0.6 μm; the shape of the first lead layer is a cuboid, the length of the cuboid is 25 μm, the width is 0.7 μm, and the height is 0.6 μm; the material of the lower board metal layer is aluminum, the shape is a cuboid, and the length is 350 μm, the width is 350 μm, and the height is 0.6 μm; the material of the lower insulating layer of the inferior board is silicon dioxide, the shape is a rectangular parallelepiped, the length is 350 μm, the width is 350 μm, and the height is 0.6 μm; the material of the second lead layer It is aluminum with a rectangular parallelepiped shape. The length of the rectangular parallelepiped is 25 μm, the width is 0.7 μm, and the height is 0.6 μm; the material of the insulating layer is silicon dioxide, and the insulating layer is filled in the upper plate layer, the first lead layer, and the second lead Between the layer and the lower plate layer; the shape of the aluminum layer in the insulating layer is a cuboid, the length of the cuboid is 100 μm, the width is 0.7 μm, and the height is 0.6 μm; the shape of the first tungsten layer is a cuboid, and the length of the cuboid is 20 μm , The width is 0.7 μm and the height is 0.6 μm; the shape of the second tungsten layer is a cuboid, the length of the cuboid is 20 μm, the width is 0.7 μm, and the height is 0.6 μm; the shape of the third tungsten layer is a cuboid, and the length of the cuboid is 20 μm , The width is 0.7 μm, the height is 3 μm; the shape of the first hollow layer is a cylinder, the bottom radius is 80 μm, and the side height is 0.6 μm; the shape of the second hollow layer is a hollow cylinder, the outer radius of the bottom surface is 395 μm, The inner radius is 205 μm, the side height is 0.6 μm; the shape of the third hollow layer is a hollow cylinder, the outer radius of the bottom surface is 695 μm, the inner radius is 505 μm, and the side height is 0.6 μm.
本实施例还提供一种换能器的制备方法，制备方法与实施例1的区别仅在于第一次反应离子深刻蚀和第二次反应离子深刻蚀的刻蚀参数包括：刻蚀气体为体积比为6:1的CHF 3和氧气的混合气体，RIE源的功率为80 W，刻蚀的均匀性为95%。 This embodiment also provides a method for preparing a transducer. The difference between the preparation method and Example 1 is only that the etching parameters of the first deep reactive ion etching and the second deep reactive ion etching include: the etching gas is volume A mixed gas of CHF 3 and oxygen with a ratio of 6:1, the power of the RIE source is 80 W, and the etching uniformity is 95%.
对本实施例3得到的换能器进行性能测试，测试标准与实施例1的测试标准相同，测得的超声强度为8 W/cm 2，超声频率为2300 KHz，阵列化测试符合标准。 The performance test of the transducer obtained in Example 3 is performed. The test standard is the same as that of Example 1. The measured ultrasonic intensity is 8 W/cm 2 , the ultrasonic frequency is 2300 KHz, and the array test meets the standard.
申请人声明，以上所述仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，所属技术领域的技术人员应该明了，任何属于本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，均落在本发明的保护范围和公开范围之内。The applicant declares that the above are only specific implementations of the present invention, but the scope of protection of the present invention is not limited to this, and those skilled in the art should understand that anyone who belongs to the technical field disclosed in the present invention Any changes or substitutions that can be easily conceived within the technical scope fall within the scope of protection and disclosure of the present invention.

Claims (10)

  1. 一种换能器，其特征在于，所述换能器包括：第一组件、第二组件以及用于连接第一组件和第二组件的第三组件； A transducer, characterized in that the transducer comprises: a first component, a second component, and a third component for connecting the first component and the second component;
    所述第一组件包括上级板层和第一引线层；The first component includes an upper board layer and a first lead layer;
    所述第二组件包括下级板层和第二引线层；The second component includes a lower board layer and a second lead layer;
    所述第三组件包括绝缘层以及位于绝缘层内部的导电层、派瑞林层和空心层；The third component includes an insulating layer, a conductive layer, a parylene layer, and a hollow layer located inside the insulating layer;
    所述上极板层、第一引线层和第二引线层均悬设在下极板层的上方；The upper electrode plate layer, the first lead layer and the second lead layer are all suspended above the lower electrode plate layer;
    所述上极板层和第一引线层通过第三组件中的导电层相连；The upper electrode plate layer and the first lead layer are connected through the conductive layer in the third component;
    所述下极板层和第二引线层通过第三组件中的导电层相连。The lower electrode plate layer and the second lead layer are connected by the conductive layer in the third component.
  2. 根据权利要求1所述的换能器，其特征在于，所述上极板层包括第一金属层、环设在第一金属层外周缘的第二金属层以及环设在第二金属层外周缘的第三金属层； The transducer according to claim 1, wherein the upper electrode plate layer includes a first metal layer, a second metal layer ringed on the outer periphery of the first metal layer, and ringed on the outer periphery of the second metal layer. The third metal layer of the edge;
    优选地，所述第一金属层为实心圆柱体，所述圆柱体的底面半径为0-100 μm，优选5 μm，侧面高度为0.5-0.6 μm，优选0.55 μm；Preferably, the first metal layer is a solid cylinder, the bottom radius of the cylinder is 0-100 μm, preferably 5 μm, and the side height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第二金属层为空心圆柱体，所述空心圆柱体的底面外圆半径为4-400 μm，优选15 μm，底面内圆半径为2-200 μm，优选7 μm，侧面高度为0.5-0.6 μm，优选0.55 μm；Preferably, the second metal layer is a hollow cylinder, the outer radius of the bottom surface of the hollow cylinder is 4-400 μm, preferably 15 μm, the inner radius of the bottom surface is 2-200 μm, preferably 7 μm, and the side height 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第三金属层为空心圆柱体，所述空心圆柱体的底面外圆半径为8-700 μm，优选25 μm，底面内圆半径为6-500 μm，优选17 μm，侧面高度为0.5-0.6 μm，优选0.55 μm；Preferably, the third metal layer is a hollow cylinder, the outer radius of the bottom surface of the hollow cylinder is 8-700 μm, preferably 25 μm, the inner radius of the bottom surface is 6-500 μm, preferably 17 μm, and the height of the side surface 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第一引线层设置在第三金属层的外周缘，且与第三金属层间隔设置；Preferably, the first lead layer is arranged on the outer periphery of the third metal layer, and is arranged at an interval from the third metal layer;
    优选地，所述第一引线层的形状为长方体，所述长方体的长度为15-25 μm，优选20 μm，宽度为0.3-0.7 μm，优选0.5 μm，高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the first lead layer is a cuboid, the length of the cuboid is 15-25 μm, preferably 20 μm, the width is 0.3-0.7 μm, preferably 0.5 μm, and the height is 0.5-0.6 μm, preferably 0.55 μm ；
    优选地，所述上极板层和第一引线层的材质均为铝。Preferably, the material of the upper electrode plate layer and the first lead layer are both aluminum.
  3. 根据权利要求1或2所述的换能器，其特征在于，所述下极板层包括金属层以及位于金属层下底面的下绝缘层； The transducer according to claim 1 or 2, wherein the lower electrode plate layer comprises a metal layer and a lower insulating layer located on the bottom surface of the metal layer;
    优选地，所述金属层的材质为铝；Preferably, the material of the metal layer is aluminum;
    优选地，所述下绝缘层的材质为二氧化硅；Preferably, the material of the lower insulating layer is silicon dioxide;
    优选地，所述金属层的形状为长方体，所述长方体的长度为250-350 μm，优选300 μm，宽度为250-350 μm，优选300 μm，高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the metal layer is a rectangular parallelepiped, the length of the rectangular parallelepiped is 250-350 μm, preferably 300 μm, the width is 250-350 μm, preferably 300 μm, and the height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述下绝缘层的形状为长方体，所述长方体的长度为250-350 μm，优选300 μm，宽度为250-350 μm，优选300 μm，高度为1.5-1.8 μm，优选1.65 μm；Preferably, the shape of the lower insulating layer is a cuboid, the length of the cuboid is 250-350 μm, preferably 300 μm, the width is 250-350 μm, preferably 300 μm, and the height is 1.5-1.8 μm, preferably 1.65 μm;
    优选地，第二引线层的形状为长方体，所述长方体的长度为15-25 μm，优选20 μm，宽度为0.3-0.7 μm，优选0.5 μm，高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the second lead layer is a cuboid, the length of the cuboid is 15-25 μm, preferably 20 μm, the width is 0.3-0.7 μm, preferably 0.5 μm, and the height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第二引线层的材质为铝。Preferably, the material of the second lead layer is aluminum.
  4. 根据权利要求1-3任一项所述的换能器，其特征在于，所述绝缘层的材质为二氧化硅； The transducer according to any one of claims 1-3, wherein the material of the insulating layer is silicon dioxide;
    优选地，所述导电层包括铝层以及与垂直于铝层设置的钨层；Preferably, the conductive layer includes an aluminum layer and a tungsten layer arranged perpendicular to the aluminum layer;
    优选地，所述钨层包括从平行间隔设置的第一钨层、第二钨层和第三钨层；Preferably, the tungsten layer includes a first tungsten layer, a second tungsten layer, and a third tungsten layer arranged at intervals from parallel;
    优选地，所述上极板层的电信号依次通过第一钨层、铝层以及第二钨层传导至第一引线层；Preferably, the electrical signal of the upper electrode plate layer is sequentially conducted to the first lead layer through the first tungsten layer, the aluminum layer, and the second tungsten layer;
    优选地，所述下极板层的电信号通过第三钨层传导至第二引线层；Preferably, the electrical signal of the lower electrode plate layer is conducted to the second lead layer through the third tungsten layer;
    优选地，所述铝层的形状为长方体，所述长方体的长度为2-100 μm，优选8 μm，宽度为0.3-0.7 μm，优选0.5 μm，高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the aluminum layer is a cuboid, the length of the cuboid is 2-100 μm, preferably 8 μm, and the width is 0.3-0.7 μm, preferably 0.5 μm, the height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第一钨层的形状为长方体，所述长方体的长度为0.1-20 μm，优选5 μm，宽度为0.3-0.7 μm，优选0.5 μm，高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the first tungsten layer is a cuboid, the length of the cuboid is 0.1-20 μm, preferably 5 μm, and the width is 0.3-0.7 μm, preferably 0.5 μm, the height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第二钨层的形状为长方体，所述长方体的长度为0.1-20 μm，优选5 μm，宽度为0.3-0.7 μm，优选0.5 μm，高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the second tungsten layer is a cuboid, the length of the cuboid is 0.1-20 μm, preferably 5 μm, and the width is 0.3-0.7 μm, preferably 0.5 μm, the height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第三钨层的形状为长方体，所述长方体的长度为0.1-20 μm，优选5 μm，宽度为0.3-0.7 μm，优选0.5 μm，高度为2.5-3 μm，优选2.75 μm；Preferably, the shape of the third tungsten layer is a cuboid, the length of the cuboid is 0.1-20 μm, preferably 5 μm, and the width is 0.3-0.7 μm, preferably 0.5 μm, the height is 2.5-3 μm, preferably 2.75 μm;
    优选地，所述派瑞林层和空心层均平行设置在导电层的下方，且与导电层之间的垂直距离为0.5-0.6 μm，优选0.55 μm；Preferably, the parylene layer and the hollow layer are both arranged in parallel below the conductive layer, and the vertical distance between the parylene layer and the conductive layer is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述空心层包括第一空心层、环设在第一空心层外周缘的第二空心层以及设置在第二空心层外周缘的第三空心层；Preferably, the hollow layer includes a first hollow layer, a second hollow layer ringed on the outer periphery of the first hollow layer, and a third hollow layer disposed on the outer periphery of the second hollow layer;
    优选地，所述第一空心层的形状为圆柱体，所述圆柱体的底面半径为0-100 μm，优选3 μm，侧面高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the first hollow layer is a cylinder, the bottom radius of the cylinder is 0-100 μm, preferably 3 μm, and the side height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第二空心层的形状为空心圆柱体，所述空心圆柱体的底面内圆半径为2.5-205 μm，优选9 μm，底面外圆半径为3.5-395 μm，优选13 μm，侧面高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the second hollow layer is a hollow cylinder, the inner radius of the bottom surface of the hollow cylinder is 2.5-205 μm, preferably 9 μm, and the outer radius of the bottom surface is 3.5-395 μm, preferably 13 μm, The side height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述第三空心层的形状为空心圆柱体，所述空心圆柱体的底面内圆半径为6.5-505 μm，优选19 μm，底面外圆半径为7.5-695 μm，优选23 μm，侧面高度为0.5-0.6 μm，优选0.55 μm；Preferably, the shape of the third hollow layer is a hollow cylinder, the inner radius of the bottom surface of the hollow cylinder is 6.5-505 μm, preferably 19 μm, and the outer radius of the bottom surface is 7.5-695 μm, preferably 23 μm, The side height is 0.5-0.6 μm, preferably 0.55 μm;
    优选地，所述派瑞林层设置在第三空心层的外周缘。Preferably, the parylene layer is arranged on the outer periphery of the third hollow layer.
  5. 根据权利要求1-4任一项所述的换能器的制备方法，其特征在于，所述制备方法包括：将裸片依次进行一次刻蚀、镀膜以及二次刻蚀，得到所述换能器。 The manufacturing method of the transducer according to any one of claims 1 to 4, wherein the manufacturing method comprises: sequentially performing primary etching, coating and secondary etching on the die to obtain the transducer Device.
  6. 根据权利要求5所述的制备方法，其特征在于，所述裸片是通过Cadence virtuoso软件设计，而后进行生产得到的； The preparation method according to claim 5, wherein the die is designed by Cadence virtuoso software and then produced;
    优选地，所述裸片的结构包括非金属氧化物层、分布在非金属氧化物层内部的金属层，以及位于非金属氧化物层上表面的氮化硅层；Preferably, the structure of the die includes a non-metal oxide layer, a metal layer distributed inside the non-metal oxide layer, and a silicon nitride layer on the upper surface of the non-metal oxide layer;
    优选地，所述非金属氧化物层为二氧化硅层；Preferably, the non-metal oxide layer is a silicon dioxide layer;
    优选地，所述金属层包括铝层和钨层；Preferably, the metal layer includes an aluminum layer and a tungsten layer;
    优选地，所述铝层的层数为5层，自下而上依次包括M1层、M2层、M3层、M4层以及M5层；Preferably, the number of layers of the aluminum layer is 5, which includes M1 layer, M2 layer, M3 layer, M4 layer, and M5 layer in order from bottom to top;
    优选地，所述钨层的层数为4层，自左至右依次包括W1层、W2层、W3层以及W4层；Preferably, the number of layers of the tungsten layer is 4, including W1 layer, W2 layer, W3 layer, and W4 layer in order from left to right;
    优选地，所述W1用于垂直连接M2和M5层，W2层和W3层均用于垂直连接M3层和M4层，W4层用于垂直连接M1层和M4层。Preferably, the W1 is used to vertically connect the M2 and M5 layers, the W2 and W3 layers are both used to vertically connect the M3 and M4 layers, and the W4 layer is used to vertically connect the M1 and M4 layers.
  7. 根据权利要求5或6所述的制备方法，其特征在于，所述一次刻蚀包括对裸片依次进行第一次反应离子深刻蚀和湿法刻蚀； The manufacturing method according to claim 5 or 6, characterized in that, the first etching comprises sequentially performing the first deep reactive ion etching and wet etching on the die;
    优选地，所述第一次反应离子深刻蚀为干法刻蚀；Preferably, the first deep reactive ion etching is dry etching;
    优选地，所述第一次反应离子深刻蚀的刻蚀参数包括：刻蚀气体为CHF 3和氧气的混合气体，RIE源的功率为50-80 W，刻蚀的均匀性为90-95%； Preferably, the etching parameters of the first deep reactive ion etching include: the etching gas is a mixed gas of CHF 3 and oxygen, the power of the RIE source is 50-80 W, and the etching uniformity is 90-95% ；
    优选地，所述CHF 3和氧气的混合气体中CHF 3和氧气的体积比为(3-6):1； Preferably, the volume ratio of CHF 3 and oxygen in the mixed gas of CHF 3 and oxygen is (3-6):1;
    优选地，所述第一次反应离子深刻蚀包括刻蚀除去裸片中M5层上表面的氮化硅层和二氧化硅层，以及垂直于M5层设置，且未有M5层保护的二氧化硅层，得到预制品A；Preferably, the first deep reactive ion etching includes etching and removing the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the die, and the dioxide that is arranged perpendicular to the M5 layer and is not protected by the M5 layer. Silicon layer to obtain preform A;
    优选地，所述湿法刻蚀包括酸刻蚀；Preferably, the wet etching includes acid etching;
    优选地，所述酸刻蚀用酸液的制备方法包括：将磷酸、硝酸、冰醋酸以及去离子水按照体积比为1:1:2:16混合得到；Preferably, the preparation method of the acid solution for acid etching includes: mixing phosphoric acid, nitric acid, glacial acetic acid and deionized water in a volume ratio of 1:1:2:16;
    优选地，所述湿法刻蚀包括刻蚀除去预制品A中W1层以及M2层，得到预制品B。Preferably, the wet etching includes etching to remove the W1 layer and the M2 layer in the preform A to obtain the preform B.
  8. 根据权利要求5-7任一项所述的制备方法，其特征在于，所述镀膜包括在预制品B中二氧化硅层的上表面、刻蚀除去的W1层和刻蚀除去的部分M2层均沉积派瑞林层，得到预制品C； The preparation method according to any one of claims 5-7, wherein the coating includes the upper surface of the silicon dioxide layer in the preform B, the W1 layer removed by etching, and the partial M2 layer removed by etching The parylene layer is deposited to obtain the preform C;
    优选地，所述沉积的方式为化学气相沉积法。Preferably, the method of deposition is a chemical vapor deposition method.
  9. 根据权利要求5-8任一项所述的制备方法，其特征在于，所述二次刻蚀为第二次反应离子深刻蚀； The preparation method according to any one of claims 5-8, wherein the second etching is a second deep reactive ion etching;
    优选地，所述第二次反应离子深刻蚀为干法刻蚀；Preferably, the second deep reactive ion etching is dry etching;
    优选地，所述第二次反应离子深刻蚀的刻蚀参数包括：刻蚀气体为CHF3和氧气的混合气体，RIE源的功率为50-80 W，刻蚀的均匀性为90-95%；Preferably, the etching parameters of the second deep reactive ion etching include: the etching gas is a mixed gas of CHF3 and oxygen, and the power of the RIE source is 50-80 W, the uniformity of etching is 90-95%;
    优选地，所述CHF3和氧气的混合气体中CHF3和氧气的体积比为(3-6):1；Preferably, the volume ratio of CHF3 and oxygen in the mixed gas of CHF3 and oxygen is (3-6):1;
    优选地，所述第二次反应离子深刻蚀包括除去预制品C中M4层上表面的派瑞西林层和二氧化硅层，以及垂直于M4层设置，且未有M4层和M3层保护的派瑞西林层和二氧化硅层，得到所述换能器。Preferably, the second reactive ion deep etching includes removing the parecicillin layer and the silicon dioxide layer on the upper surface of the M4 layer in the preform C, and the layer perpendicular to the M4 layer and is not protected by the M4 layer and the M3 layer. The paricilin layer and the silicon dioxide layer are used to obtain the transducer.
  10. 根据权利要求1-4任一项所述的换能器在超声成像中的应用。Application of the transducer according to any one of claims 1 to 4 in ultrasound imaging.
PCT/CN2020/129193 2020-03-13 2020-11-16 Transducer, and manufacturing method therefor and application thereof WO2021179663A1 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102538850A (en) * 2012-01-04 2012-07-04 无锡智超医疗器械有限公司 Capacitor micro-electromechanical ultrasonic sensor and manufacturing method thereof
WO2017205658A1 (en) * 2016-05-25 2017-11-30 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching on microdevices and nanodevices
CN108793061A (en) * 2018-05-25 2018-11-13 岭南师范学院 A kind of preparation method of full electrode raised lines structure CMUT devices
CN110369247A (en) * 2019-01-23 2019-10-25 深圳市德力凯医疗设备股份有限公司 A kind of annular array transducer and preparation method
CN110510573A (en) * 2019-08-30 2019-11-29 中国科学院深圳先进技术研究院 A kind of capacitive micromachined ultrasonic transducer and its preparation method and application
CN111348612A (en) * 2020-03-13 2020-06-30 深圳先进技术研究院 Transducer and preparation method and application thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102538850A (en) * 2012-01-04 2012-07-04 无锡智超医疗器械有限公司 Capacitor micro-electromechanical ultrasonic sensor and manufacturing method thereof
WO2017205658A1 (en) * 2016-05-25 2017-11-30 The Regents Of The University Of Colorado, A Body Corporate Atomic layer etching on microdevices and nanodevices
CN108793061A (en) * 2018-05-25 2018-11-13 岭南师范学院 A kind of preparation method of full electrode raised lines structure CMUT devices
CN110369247A (en) * 2019-01-23 2019-10-25 深圳市德力凯医疗设备股份有限公司 A kind of annular array transducer and preparation method
CN110510573A (en) * 2019-08-30 2019-11-29 中国科学院深圳先进技术研究院 A kind of capacitive micromachined ultrasonic transducer and its preparation method and application
CN111348612A (en) * 2020-03-13 2020-06-30 深圳先进技术研究院 Transducer and preparation method and application thereof

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