CN111348612A - Transducer and preparation method and application thereof - Google Patents
Transducer and preparation method and application thereof Download PDFInfo
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- CN111348612A CN111348612A CN202010177554.4A CN202010177554A CN111348612A CN 111348612 A CN111348612 A CN 111348612A CN 202010177554 A CN202010177554 A CN 202010177554A CN 111348612 A CN111348612 A CN 111348612A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229920000052 poly(p-xylylene) Polymers 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 83
- 238000005530 etching Methods 0.000 claims description 83
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 70
- 229910052782 aluminium Inorganic materials 0.000 claims description 66
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 66
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 55
- 229910052721 tungsten Inorganic materials 0.000 claims description 55
- 239000010937 tungsten Substances 0.000 claims description 55
- 239000000377 silicon dioxide Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 35
- 150000002500 ions Chemical class 0.000 claims description 33
- 235000012239 silicon dioxide Nutrition 0.000 claims description 30
- 238000001039 wet etching Methods 0.000 claims description 21
- 239000002253 acid Substances 0.000 claims description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052755 nonmetal Inorganic materials 0.000 claims description 15
- 238000001020 plasma etching Methods 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 8
- 239000007787 solid Substances 0.000 claims description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000001312 dry etching Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229960000583 acetic acid Drugs 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 239000012362 glacial acetic acid Substances 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000007888 film coating Substances 0.000 claims description 2
- 238000009501 film coating Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 238000012285 ultrasound imaging Methods 0.000 claims description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims 3
- 239000000203 mixture Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 8
- 238000004528 spin coating Methods 0.000 description 8
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000011112 process operation Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002897 polymer film coating Substances 0.000 description 2
- 239000008213 purified water Substances 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 metal oxide silicon dioxide Chemical class 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0644—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element
- B06B1/0651—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using a single piezoelectric element of circular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00531—Dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00912—Treatments or methods for avoiding stiction of flexible or moving parts of MEMS
- B81C1/0092—For avoiding stiction during the manufacturing process of the device, e.g. during wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B2201/00—Indexing scheme associated with B06B1/0207 for details covered by B06B1/0207 but not provided for in any of its subgroups
- B06B2201/70—Specific application
- B06B2201/76—Medical, dental
Abstract
The invention provides a transducer and a preparation method and application thereof, wherein the transducer comprises: the device comprises a first component, a second component and a third component for connecting the first component and the second component; the first assembly comprises an upper layer plate layer and a first lead layer; the second assembly includes a lower stage board layer and a second lead layer; the third assembly comprises an insulating layer, and a conducting layer, a parylene layer and a hollow layer which are positioned in the insulating layer; the upper polar plate layer, the first lead layer and the second lead layer are all suspended above the lower polar plate layer; the upper electrode plate layer is connected with the first lead layer through a conducting layer in the third assembly; the lower pole plate layer is connected with the second lead layer through a conducting layer in the third assembly; the transducer can greatly reduce the area of the device on the premise of better ultrasonic intensity and ultrasonic frequency, and is convenient for the array of the transducer.
Description
Technical Field
The invention belongs to the technical field of micro-electro-mechanical systems, relates to a transducer, a preparation method and application thereof, and particularly relates to a concentric ring capacitive micro-machined ultrasonic transducer based on a non-diffraction sound field, and a preparation method and application thereof.
Background
The ultrasonic wave is a mechanical wave with vibration frequency higher than that of sound wave, and has the characteristics of high frequency, short wavelength, small diffraction phenomenon, good directivity, capability of being directionally propagated as a ray and the like. The ultrasonic wave can transmit information, and more concentrated sound energy is easy to obtain. The ultrasonic wave has strong penetrating power to liquid and solid, and especially in opaque solid, it can penetrate several tens of meters. Therefore, the ultrasonic detection is widely applied to the aspects of industry, agriculture, national defense, medicine and the like.
Typically, ultrasonic transducers are formed from a piezoelectric ceramic material such as PZT or a piezoelectric polymer such as PVDF. Currently transducers can be made by semiconductor processes. Such transducers are formed of tiny semiconductor cells in which a diaphragm generates and receives ultrasonic energy, and are called Micromachined Ultrasonic Transducers (MUTs). Two such transducer types are: those that utilize piezoelectric materials on a membrane, known as Piezoelectric Micromachined Ultrasonic Transducers (PMUTs); and those that utilize the capacitive effect between a conductive film and another electrode are referred to as Capacitive Micromachined Ultrasonic Transducers (CMUTs). Individual transducer elements may be formed from tens or hundreds of such MUT cells operating in unison. Because these cells are very small, each MUT cell only generates or responds to a small amount of acoustic energy. Acoustic energy is often augmented using a single transducer array approach, which is difficult to implement for Piezoelectric Micromachined Ultrasonic Transducers (PMUTs). The appearance of Capacitive Micromachined Ultrasonic Transducers (CMUTs) has well overcome many of the disadvantages of piezoelectric sensors, and has many advantages of easy manufacture, small size, low noise, large working temperature range, easy realization of large-scale array electronic integration, etc., and is in great potential to replace piezoelectric sensors.
The basic structure of a capacitive micromachined ultrasonic sensor (CMUT) based on the corrosion sacrificial layer technology is composed of upper and lower electrodes and a sacrificial layer between the electrodes. In order to release the sacrificial layer, a cavity gap is formed, an etching area must be formed between the upper electrode and the lower electrode, etching solution is poured in, and after the cavity gap is formed, the etching solution is removed. In practice, this process has two problems: 1. in the wet etching process, the etching results in different etching degrees due to the concentration of the etching solution and the etching time, thereby reducing the process consistency. 2. In the process of removing the corrosive liquid, due to the tiny (2um) gap of the cavity and the existence of the surface tension of the liquid, the upper collapse is easily caused, so that the upper electrode and the lower electrode are adhered together, and the device is failed.
Therefore, it is very necessary to provide a transducer and a method for manufacturing the same, which has a small device area, is convenient for device array, can be self-stopped during the manufacturing process, and can effectively prevent the diaphragm from sticking to the substrate.
Disclosure of Invention
The invention aims to provide a transducer and a preparation method and application thereof, wherein the transducer is a non-diffraction ultrasonic field, as non-diffraction waves can propagate infinity and cannot be dispersed in an ideal state, and the non-diffraction waves are highly focused ultrasonic waves, the application of the non-diffraction waves to an ultrasonic imaging system does not need time delay focusing treatment, and the imaging frame rate is improved; in the preparation process, the reactive ion deep etching and the wet etching are matched for use, so that the preparation process can be stopped automatically; multiple photoetching and the like are avoided, and the consistency and repeatability in the process operation process can be ensured; by providing the channels in the metal layer, the first and second components are prevented from sticking to each other.
In order to achieve the purpose, the invention adopts the following technical scheme:
it is an object of the present invention to provide a transducer, comprising: the device comprises a first component, a second component and a third component for connecting the first component and the second component;
the first assembly comprises an upper layer plate layer and a first lead layer;
the second assembly includes a lower stage board layer and a second lead layer;
the third assembly comprises an insulating layer, and a conducting layer, a parylene layer and a hollow layer which are positioned in the insulating layer;
the upper polar plate layer, the first lead layer and the second lead layer are all suspended above the lower polar plate layer;
the upper electrode plate layer is connected with the first lead layer through a conducting layer in the third assembly;
the lower plate layer and the second lead layer are connected through a conductive layer in the third assembly.
In the invention, the transducer is a non-diffraction ultrasonic field, because the non-diffraction wave can propagate infinity and can not diverge in an ideal state, and the non-diffraction wave is a high-focusing ultrasonic wave, the application of the non-diffraction wave to an ultrasonic imaging system does not need to carry out time delay focusing treatment, thereby improving the imaging frame rate; the speed of sound wave in human body is 1.5 mm/mus, when the round-trip time of sound wave is 267 mus, the distance of sound wave propagation in human body is 20cm, and the imaging speed is 3750 frames/second. But the speed of the traditional ultrasonic imaging system is only 30 frames/second at present, and the imaging speed is effectively improved by using non-diffracted wave imaging.
The transducer is a concentric ring capacitance type micro-mechanical ultrasonic transducer based on a non-diffraction sound field, and can greatly reduce the area of the device on the premise of better ultrasonic intensity and ultrasonic frequency, thereby facilitating the array of the transducer.
In the invention, the upper plate layer comprises a first metal layer, a second metal layer annularly arranged on the outer periphery of the first metal layer and a third metal layer annularly arranged on the outer periphery of the second metal layer.
In the invention, the first metal layer, the second metal layer and the third metal layer are arranged from inside to outside in concentric circles.
In the present invention, the first metal layer is a solid cylinder, the radius of the bottom surface of the cylinder is 0 to 100 μm, (excluding 0, e.g., 1 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.), preferably 5 μm, and the height of the side surface is 0.5 to 0.6 μm, (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the present invention, the second metal layer is a hollow cylinder having a base outer circle radius of 4 to 400 μm (e.g., 4 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, etc.), preferably 15 μm, a base inner circle radius of 2 to 200 μm (e.g., 2 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, etc.), preferably 7 μm, a side height of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the present invention, the third metal layer is a hollow cylinder having a bottom surface with an outer circular radius of 8 to 700 μm (e.g., 8 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 700 μm, etc.), preferably 25 μm, and a bottom surface with an inner circular radius of 6 to 500 μm (e.g., 6 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, etc.), preferably 17 μm, and a side height of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the invention, the first lead layer is arranged at the outer periphery of the third metal layer and is arranged at an interval with the third metal layer.
In the present invention, the first lead layer is in the shape of a rectangular parallelepiped having a length of 15 to 25 μm (e.g., 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, 25 μm, etc.), preferably 20 μm, a width of 0.3 to 0.7 μm (e.g., 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, and a height of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.51 μm, 0.52 μm, 0.53 μm, 0.54 μm, 0.55 μm, 0.56 μm, 0.57 μm, 0.58 μm, 0.59 μm, 0.55 μm, etc.), preferably 0.55 μm.
In the invention, the upper plate layer and the first lead layer are both made of aluminum.
In the invention, the lower plate layer comprises a metal layer and a lower insulating layer positioned on the lower bottom surface of the metal layer.
In the invention, the metal layer is made of aluminum.
In the invention, the insulating layer is made of silicon dioxide.
In the present invention, the metal layer is in the form of a rectangular parallelepiped having a length of 250-350 μm (e.g., 250 μm, 260 μm, 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, etc.), preferably 300 μm, a width of 250-350 μm (e.g., 250 μm, 260 μm, 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, etc.), preferably 300 μm, a height of 0.5-0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the present invention, the lower insulating layer has a rectangular parallelepiped shape having a length of 250-350 μm (e.g., 250 μm, 260 μm, 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, etc.), preferably 300 μm, a width of 250-350 μm (e.g., 250 μm, 260 μm, 270 μm, 280 μm, 290 μm, 300 μm, 310 μm, 320 μm, 330 μm, 340 μm, 350 μm, etc.), preferably 300 μm, a height of 1.5-1.8 μm (e.g., 1.5 μm, 1.55 μm, 1.6 μm, 1.65 μm, 1.7 μm, 1.75 μm, 1.8 μm, etc.), preferably 1.65 μm.
In the present invention, the second lead layer is in the shape of a rectangular parallelepiped, the rectangular parallelepiped has a length of 15 to 25 μm (e.g., 15 μm, 16 μm, 17 μm, 18 μm, 19 μm, 20 μm, 21 μm, 22 μm, 23 μm, 24 μm, 25 μm, etc.), preferably 20 μm, a width of 0.3 to 0.7 μm (e.g., 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, and a height of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.51 μm, 0.52 μm, 0.53 μm, 0.54 μm, 0.55 μm, 0.56 μm, 0.57 μm, 0.58 μm, 0.59 μm, 0.55 μm, etc.), preferably 0.55 μm.
In the present invention, the second lead layer is made of aluminum.
In the invention, the insulating layer is made of silicon dioxide.
In the invention, the conductive layer comprises an aluminum layer and a tungsten layer arranged perpendicular to the aluminum layer.
In the invention, the tungsten layer comprises a first tungsten layer, a second tungsten layer and a third tungsten layer which are arranged in parallel at intervals.
In the invention, the electric signal of the upper electrode plate layer is transmitted to the first lead layer through the first tungsten layer, the aluminum layer and the second tungsten layer in sequence.
In the invention, the electric signal of the lower plate layer is conducted to the second lead layer through the third tungsten layer.
In the present invention, the aluminum layer is in the form of a rectangular parallelepiped having a length of 2 to 100 μm (e.g., 2 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.), preferably 8 μm, a width of 0.3 to 0.7 μm (e.g., 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, and a height of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the present invention, the first tungsten layer is in the form of a rectangular parallelepiped having a length of 0.1 to 20 μm (e.g., 0.1 μm, 3 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, etc.), preferably 5 μm, a width of 0.3 to 0.7 μm (e.g., 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, and a height of 0.5 to 0.6 μm, preferably 0.55 μm.
In the present invention, the second tungsten layer is in the form of a rectangular parallelepiped having a length of 0.1 to 20 μm (e.g., 0.1 μm, 3 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, etc.), preferably 5 μm, a width of 0.3 to 0.7 μm (e.g., 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, and a height of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the present invention, the third tungsten layer is in the form of a rectangular parallelepiped having a length of 0.1 to 20 μm (e.g., 0.1 μm, 3 μm, 5 μm, 8 μm, 10 μm, 12 μm, 15 μm, 18 μm, 20 μm, etc.), preferably 5 μm, a width of 0.3 to 0.7 μm (e.g., 0.3 μm, 0.35 μm, 0.4 μm, 0.45 μm, 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, etc.), preferably 0.5 μm, and a height of 2.5 to 3 μm (e.g., 2.5 μm, 2.55 μm, 2.6 μm, 2.65 μm, 2.7 μm, 2.75 μm, 2.8 μm, 2.85 μm, 2.9 μm, 2.95 μm, 3.75 μm, etc.), preferably 75 μm.
In the present invention, the parylene layer and the hollow layer are both disposed in parallel below the conductive layer, and the perpendicular distance between the parylene layer and the conductive layer is 0.5-0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the invention, the hollow layer comprises a first hollow layer, a second hollow layer arranged around the outer periphery of the first hollow layer and a third hollow layer arranged around the outer periphery of the second hollow layer.
In the present invention, the first hollow layer is shaped as a cylinder having a radius of 0 to 100 μm (excluding 0, e.g., 1 μm, 5 μm, 10 μm, 20 μm, 30 μm, 40 μm, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.), preferably 3 μm, and a height of a side surface of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the present invention, the second hollow layer is shaped as a hollow cylinder having an inner circle radius of 2.5 to 205 μm (e.g., 2.5 μm, 5 μm, 10 μm, 30 μm, 50 μm, 70 μm, 100 μm, 120 μm, 150 μm, 170 μm, 200 μm, 205 μm, etc.) at the bottom, preferably 9 μm, an outer circle radius of 3.5 to 395 μm (e.g., 3.5 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 395 μm, etc.) at the bottom, and a side height of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the present invention, the third hollow layer is shaped as a hollow cylinder having an inner circle radius of 6.5 to 505 μm (e.g., 6.5 μm, 30 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 505 μm, etc.) at the bottom surface, preferably 19 μm, and an outer circle radius of 7.5 to 695 μm (e.g., 7.5 μm, 30 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, 500 μm, 550 μm, 600 μm, 650 μm, 695 μm, etc.), preferably 23 μm, and a side height of 0.5 to 0.6 μm (e.g., 0.5 μm, 0.52 μm, 0.55 μm, 0.57 μm, 0.6 μm, etc.), preferably 0.55 μm.
In the invention, the parylene layer is arranged at the outer periphery of the third hollow layer.
In the invention, the parylene is used for blocking corrosion holes, 1g of parylene is evaporated for 5.5 hours generally, the thickness of the horizontal surface is 1 μm, and the content of the parylene is adjusted according to requirements.
It is a second object of the present invention to provide a method of manufacturing a transducer according to the first object, the method comprising: and sequentially carrying out primary etching, film coating and secondary etching on the bare chip to obtain the transducer.
In the present invention, the die is first designed by Cadence virtuoso and then produced.
According to the invention, the appearance structure of the bare chip is a cuboid, the bare chip is vertical to the upper bottom surface and the lower bottom surface of the cuboid, the bare chip is cut along the centers of the upper bottom surface and the lower bottom surface, and the section is parallel to one side surface of the cuboid; wherein fig. 1 is a cross-sectional view of a die structure, as can be seen from fig. 1, the die structure includes a non-metal oxide layer, an aluminum layer a2 (only one aluminum layer is identified for the sake of simplicity and clarity in the drawing, a2 refers to not only the aluminum layer M1 marked in the drawing but also the aluminum layers M1-M5 in the whole fig. 1) and a tungsten layer A3 (only one tungsten layer is identified for the sake of simplicity and clarity in the drawing, A3 refers to not only the tungsten layer W1 marked in the drawing but also the metal layers W1-W4 in the whole fig. 1), which are distributed inside the non-metal oxide layer a1, and a silicon nitride layer a4 located on the upper surface of the non-metal oxide layer a 1; the non-metal oxide layer is a silicon dioxide layer; the aluminum layer comprises 5 layers, namely an M1 layer, an M2 layer, an M3 layer, an M4 layer and an M5 layer from bottom to top in sequence; the aluminum layers may be distributed continuously or at intervals, if the aluminum layers are distributed at intervals, several parts located at the same horizontal plane are collectively referred to as 1 aluminum layer, for example, M1 includes only one aluminum layer, M2 includes 6 aluminum layers (i.e., M21 layer, M22 layer, M23 layer, M24 layer, M25 layer, M26 layer) distributed at intervals from left to right, M3 includes only one aluminum layer, M4 includes 7 aluminum layers (i.e., M41 layer, M42 layer, M43 layer, M44 layer, M45 layer, M46 layer, M47 layer) distributed at intervals from left to right, and M5 includes only one aluminum layer; the number of the tungsten layers is 4, and the tungsten layers sequentially comprise a W1 layer, a W2 layer, a W3 layer and a W4 layer from left to right; the W1 layer is used for vertically connecting the M5 layer and the M21 layer, the W2 layer is used for vertically connecting the M3 layer and the M45 layer, the W3 layer is used for vertically connecting the M3 layer and the M46 layer, and the W4 layer is used for vertically connecting the M1 layer and the M47 layer.
In the present invention, the rectangular parallelepipeds are each represented by a length in the left-to-right direction in fig. 1, a height in the top-to-bottom direction, and a width in the inside-to-outside direction.
In the invention, the primary etching comprises the steps of sequentially carrying out primary reactive ion deep etching and wet etching on the bare chip.
In the invention, the first reactive ion deep etching is dry etching.
In the invention, the first reactive ion deep etching is dry etching.
The first reactive ion deep etching belongs to dry etching, has better vertical etching capability on non-metallic compounds and no corrosion on metals, and the etching process can be automatically stopped due to the existence of an aluminum layer from top to bottom by utilizing the characteristic that the first reactive ion deep etching only reacts with the non-metals but not the metals.
In the invention, the etching parameters of the first reactive ion deep etching comprise: the etching gas is CHF3And oxygen, the power of the RIE source is 50-80W, such as 50W, 55W, 60W, 65W, 70W, 75W, 80W and the like, and the etching uniformity is 90-95%, such as 90%, 91%, 92%, 93%, 94%, 95% and the like.
In the present invention, the CHF3CHF in mixed gas with oxygen3And oxygen in a volume ratio of (3-6) to 1, e.g., 3:1, 3.5:1, 4:1, 4.5:1, 5:1, 5.5:1, 6:1, etc.
In the invention, the first reactive ion etching comprises etching to remove the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the bare chip, and the silicon dioxide layer which is arranged perpendicular to the M5 layer and is not protected by the M5 layer to obtain a prefabricated product A.
In the present invention, fig. 2 is a cross-sectional view of a preform a obtained after a first reactive ion etch back, as can be seen from fig. 2, the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the original drawing 1 are removed by the first reactive ion etch back, and the silicon dioxide layer disposed vertically to the M5 layer and not protected by the M5 layer is removed from top to bottom, so as to obtain the structure of the preform a, in the first reactive ion etch back process, the reactive ions only react with the silicon dioxide layer and do not react with the metal layer, and in the top to bottom etching process, when the metal layer of M5 is etched, the etching is automatically stopped.
In the present invention, the wet etching includes acid etching.
In the wet etching process, all the aluminum layers which can be contacted with the strong acid are corroded, but the non-metal oxide silicon dioxide does not react with the strong acid, so that self-stopping can occur in the wet etching process.
In the invention, the preparation method of the acid liquid for acid etching comprises the following steps: mixing phosphoric acid, nitric acid, glacial acetic acid and deionized water according to the volume ratio of 1:1:2:16 to obtain the composite.
In the present invention, the wet etching includes etching to remove W1 layer and M2 layer from preform A, resulting in preform B.
In the present invention, fig. 3 is a cross-sectional view of a preform B obtained after wet etching, as can be seen from fig. 3, in the wet etching process, an acid solution used in the wet etching process reacts with a metal but does not react with a silicon dioxide layer, the W1 layer is etched and removed first in the wet etching process, the W1 layer and the M21 layer are connected, and after the W1 layer is removed by acid etching, the M21 layer is etched and removed by the acid solution, wherein micro-channels are provided between the M21 layer, the M22 layer, the M23 layer, the M24 layer, the M25 layer and the M26 layer, and the acid solution etches the M21 layer, the M22 layer, the M23 layer, the M24 layer, the M25 layer and the M26 layer in sequence along with the micro-channels, so as to obtain a preform B; and as can be seen from fig. 3, in the layer of M2, due to the function of the micro-channel, the width of the hollow is reduced, so that the hollow area is reduced, and the upper film is prevented from sticking to the lower film, so that a vibratable cavity is formed.
In the present invention, the plating film comprised a parylene layer deposited on the upper surface of the silica layer in preform B, the W1 layer removed by etching, and the partial M2 layer removed by etching, to obtain preform C.
In the invention, the deposition mode is a chemical vapor deposition method.
In the present invention, fig. 4 is a cross-sectional view of a preform C structure obtained by a chemical vapor deposition method, and as shown in fig. 4, a parylene layer is deposited on the upper surface of the silica layer in the preform B, the etched W1 layer and the etched M2 layer, so as to block the corroded small holes, so that the cavity can be in a vacuum state, and secondly, the water can be prevented from penetrating into the device to cause the actual effect of the device when the device is subsequently operated in water; the parylene film is prepared by adopting a unique vacuum vapor deposition process, and a completely conformal polymer film coating is formed by the growth of active small molecules on the surface of a substrate, can be coated on the surfaces of various shapes, including sharp edges, cracks and inner surfaces, and has the advantage that other coatings are not comparable.
In the present invention, the chemical vapor deposition method includes:
(1) baking the prefabricated product B at the temperature of 55-65 ℃ for 2-3h to remove the surface and the internal water vapor of the prefabricated product B;
(2) preparing a Micro-90 release agent with the volume concentration of 2-5% by using purified water, dipping the release agent by using a cotton cloth ball which does not fall down, and completely coating the places such as the inner wall of a deposition chamber of a coating machine which do not need coating once;
(3) and (3) hanging the prefabricated product B after the water vapor is removed on a support screen plate in a coating machine, opening a coupling agent adding port of the coating machine, injecting 3-6mL of KH-570 silane coupling agent by using an injector, spin-coating the silane coupling agent, then injecting parylene, and spin-coating parylene (the required injection is usually carried out, the thickness of a film formed by 1g of parylene is 1 mu m), wherein the spin-coating time is 5.5 hours.
In this aspect, the second etching is a second reactive ion etch back.
In the invention, the second reactive ion deep etching is dry etching.
In the invention, the etching parameters of the second reactive ion deep etching comprise: the etching gas is CHF3And oxygen, the power of the RIE source is 50-80W, such as 50W, 55W, 60W, 65W, 70W, 75W, 80W, etc., and the etching uniformity is 90-95%, such as 90%, 91%, 92%, 93%, 94%, 95%, etc。
In the present invention, the CHF3CHF in mixed gas with oxygen3And oxygen in a volume ratio of (3-6) to 1, e.g., 3:1, 3.5:1, 4:1, 4.5:1, 5:1, 5.5:1, 6:1, etc.
In the invention, the second reactive ion deep etching comprises the steps of removing the parylene layer and the silicon dioxide layer on the upper surface of the M4 layer in the preform C, and removing the parylene layer and the silicon dioxide layer which are arranged perpendicular to the M4 layer and are not protected by the M4 layer and the M3 layer to obtain the transducer.
In the present invention, fig. 5 is a cross-sectional view of the transducer structure obtained by the second reactive ion etching, and as can be seen from fig. 5, the parylene layer and the silica layer on the upper surface of the M4 layer in preform C, and the parylene layer and the silica layer disposed perpendicular to the M4 layer and not protected by the M4 layer and the M3 layer, are removed by the second reactive ion etching.
In the invention, the reactive ion deep etching and the wet etching are used in a matching way, so that the preparation process can be automatically stopped, the use of complicated etching methods such as photoetching and the like is avoided, and the repeatability in the process operation process can be ensured; in addition, the micro channels are arranged in the M2, so that the hollow width is reduced, the hollow area is reduced, the upper film is prevented from being stuck to the lower film, and a vibratile cavity is formed.
It is a further object of the invention to provide a use of a transducer as described in one of the objects in ultrasound imaging.
Compared with the prior art, the invention has the following beneficial effects:
the transducer in the invention can greatly reduce the area of the device on the premise of better ultrasonic intensity and ultrasonic frequency, thereby facilitating the array of the transducer; in the preparation process, the reactive ion deep etching and the wet etching are matched for use, so that the preparation process can be automatically stopped, the use of complicated etching methods such as photoetching and the like is avoided, and the repeatability in the process operation process can be ensured; in addition, the microchannel is arranged in the M2, so that the width of the hollow is reduced, the hollow area is reduced, and the upper film is prevented from being stuck to the lower film, so that a vibratile cavity is formed.
Drawings
FIG. 1 is a cross-sectional view of a die structure in accordance with the present disclosure;
wherein A1 is a nonmetal oxide layer, A2 is an aluminum layer, A3 is a tungsten layer, A4 is a silicon nitride layer, M1-M5 are aluminum layers, and W1-W4 are tungsten layers;
FIG. 2 is a cross-sectional view of the structure of preform A in the summary;
FIG. 3 is a cross-sectional view of the structure of preform B in the summary;
FIG. 4 is a cross-sectional view of the structure of preform C in the summary;
FIG. 5 is a cross-sectional view of a transducer configuration of the present disclosure;
FIG. 6 is a top view of a transducer in an embodiment;
FIG. 7 is a cross-sectional view along AA' of FIG. 6;
wherein 11 is an upper plate layer, 12 is a first lead layer, 21 is a lower plate layer, 211 is a metal layer, 212 is a lower insulating layer, 22 is a second lead layer, 31 is an insulating layer, 32 is a parylene layer, 33 is a hollow layer, 341 is an aluminum layer, 342 is a first tungsten layer, 343 is a second tungsten layer, and 344 is a third tungsten layer.
Detailed Description
The technical solution of the present invention is further explained by the following embodiments. It should be understood by those skilled in the art that the examples are only for the understanding of the present invention and should not be construed as the specific limitations of the present invention.
This embodiment provides a transducer, fig. 6 is a top view of the transducer, fig. 7 is a cross-sectional view along AA' of fig. 6, and as can be seen from a combination of fig. 6 and 7, the transducer includes a first component including an upper plate layer 11 and a first lead layer 12, a second component including a lower plate layer 21 and a second lead layer 22, and a third component filled between the first component and the second component, the third component including an insulating layer 31 and a parylene layer 32, a hollow layer 33, and a conductive layer inside the insulating layer; the conductive layer includes an aluminum layer 341 and a first tungsten layer 342, a second tungsten layer 343, and a third tungsten layer 344 disposed vertically perpendicular to the aluminum layer 341; the upper plate layer 11, the first lead layer 12 and the second lead layer 22 are all suspended above the lower plate layer 21; the upper plate layer 11 and the first lead layer 12 are connected through a first tungsten layer 342, an aluminum layer 341, and a second aluminum layer 343; the lower stage board layer 21 and the second lead layer 22 are connected through the third tungsten layer 344; the upper electrode plate layer 11 comprises a first metal layer, a second metal layer annularly arranged on the outer periphery of the first metal layer and a third metal layer annularly arranged on the outer periphery of the second metal layer; lower stage plate layer 21 includes a metal layer 211 and a lower insulating layer 212 on a lower surface of metal layer 211; the parylene layer 32 and the hollow layer 33 are both arranged in parallel below the aluminum layer 341; the hollow layer 33 comprises a first hollow layer, a second hollow layer and a third hollow layer, wherein the second hollow layer is annularly arranged on the outer periphery of the first hollow layer, and the third hollow layer is annularly arranged on the outer periphery of the second hollow layer; a parylene layer 32 is disposed about the outer periphery of the third hollow layer.
Example 1
In this embodiment, the upper electrode plate layer and the first lead layer are made of aluminum, the first metal layer is shaped like a solid cylinder, the radius of the bottom surface is 5 μm, and the height of the side surface is 0.55 μm; the second metal layer is in the shape of a hollow cylinder, the excircle radius of the bottom surface is 15 micrometers, the inner circle radius of the bottom surface is 7 micrometers, and the height of the side surface is 0.55 micrometers; the third metal layer is in the shape of a hollow cylinder, the excircle radius of the bottom surface is 25 micrometers, the inner circle radius of the bottom surface is 17 micrometers, and the height of the side surface is 0.55 micrometers; the first lead layer is in a cuboid shape, the length of the cuboid is 20 micrometers, the width of the cuboid is 0.5 micrometers, and the height of the cuboid is 0.55 micrometers; the lower-level plate metal layer is made of aluminum and is in a cuboid shape, the length of the lower-level plate metal layer is 300 mu m, the width of the lower-level plate metal layer is 300 mu m, and the height of the lower-level plate metal layer is 0.55 mu m; the lower insulating layer of the lower plate is made of silicon dioxide, is in a cuboid shape, and has the length of 300 mu m, the width of 300 mu m and the height of 1.65 mu m; the second lead layer is made of aluminum and is in a cuboid shape, the length of the cuboid is 20 micrometers, the width of the cuboid is 0.5 micrometers, and the height of the cuboid is 0.55 micrometers; the insulating layer is made of silicon dioxide and is filled among the upper plate layer, the first lead layer, the second lead layer and the lower plate layer; the aluminum layer in the insulating layer is in a cuboid shape, the length of the cuboid is 8 micrometers, the width of the cuboid is 0.5 micrometers, and the height of the cuboid is 0.55 micrometers; the first tungsten layer is in the shape of a cuboid having a length of 5 μm, a width of 0.5 μm, and a height of 0.55 μm, the second tungsten layer is in the shape of a cuboid having a length of 5 μm, a width of 0.5 μm, and a height of 0.55 μm, and the third tungsten layer is in the shape of a cuboid having a length of 5 μm, a width of 0.5 μm, and a height of 2.75 μm; the first hollow layer is cylindrical, the radius of the bottom surface is 3 mu m, and the height of the side surface is 0.55 mu m; the second hollow layer is in the shape of a hollow cylinder, the outer circle radius of the bottom surface is 13 mu m, the inner circle radius is 9 mu m, and the height of the side surface is 0.55 mu m; the third hollow layer is in the shape of a hollow cylinder, the outer circle radius of the bottom surface is 23 mu m, the inner circle radius is 19 mu m, and the height of the side surface is 0.55 mu m.
The present embodiment also provides a method for manufacturing a transducer, where the method includes the following steps:
the first step is as follows: drawing a Cadence virtuoso design, then using a wafer to replace a factory for production, and obtaining a bare chip by laminating;
in this embodiment, the bare chip has a cuboid appearance structure, is perpendicular to the upper and lower bottom surfaces of the cuboid, is cut along the center of the upper and lower bottom surfaces, and has a section parallel to one side surface of the cuboid; wherein fig. 1 is a cross-sectional view of a die structure, as can be seen from fig. 1, the die structure includes a non-metal oxide layer, an aluminum layer a2 (only one aluminum layer is identified for the sake of simplicity and clarity in the drawing, a2 refers to not only the aluminum layer M1 marked in the drawing but also the aluminum layers M1-M5 in the whole fig. 1) and a tungsten layer A3 (only one tungsten layer is identified for the sake of simplicity and clarity in the drawing, A3 refers to not only the tungsten layer W1 marked in the drawing but also the tungsten layers W1-W4 in the whole fig. 1), which are distributed inside the non-metal oxide layer a1, and a silicon nitride layer a4 located on the upper surface of the non-metal oxide layer a 1; the non-metal oxide layer is a silicon dioxide layer; the aluminum layer comprises 5 layers, namely an M1 layer, an M2 layer, an M3 layer, an M4 layer and an M5 layer from bottom to top in sequence; the aluminum layers may be distributed continuously or at intervals, if the aluminum layers are distributed at intervals, several parts located at the same horizontal plane are collectively referred to as 1 aluminum layer, for example, M1 includes only one aluminum layer, M2 includes 6 aluminum layers (i.e., M21 layer, M22 layer, M23 layer, M24 layer, M25 layer, M26 layer) distributed at intervals from left to right, M3 includes only one aluminum layer, M4 includes 7 aluminum layers (i.e., M41 layer, M42 layer, M43 layer, M44 layer, M45 layer, M46 layer, M47 layer) distributed at intervals from left to right, and M5 includes only one aluminum layer; the number of the tungsten layers is 4, and the tungsten layers sequentially comprise a W1 layer, a W2 layer, a W3 layer and a W4 layer from left to right; the W1 layer is used for vertically connecting the M5 layer and the M21 layer, the W2 layer is used for vertically connecting the M3 layer and the M45 layer, the W3 layer is used for vertically connecting the M3 layer and the M46 layer, and the W4 layer is used for vertically connecting the M1 layer and the M47 layer.
The second step is that: removing the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the bare chip obtained in the first step and the silicon dioxide layer which is arranged perpendicular to the M5 layer and is not protected by the M5 layer by etching to obtain a prefabricated product A;
in this embodiment, the etching parameters of the first reactive ion deep etching include: etching gas CHF with a volume ratio of 4:13And oxygen, the power of the RIE source is 60W, and the etching uniformity is 93%.
In this embodiment, the bare chip is subjected to a first reactive ion etching, wherein fig. 2 is a cross-sectional view of a preform a, the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the original drawing 1 are removed by the first reactive ion etching, and the silicon dioxide layer disposed vertically to the M5 layer and not protected by the M5 layer is removed from top to bottom, so as to obtain the structure of the preform a, during the first reactive ion etching, the reactive ions only react with the silicon dioxide layer and do not react with the metal layer, and during the top-down etching, when the etching reaches the M5 metal layer, the etching is automatically stopped.
The third step: performing wet etching on the prefabricated product A obtained in the second step to obtain a prefabricated product B;
in this embodiment, the method for preparing acid for wet etching includes: phosphoric acid, nitric acid, glacial acetic acid and deionized water are mixed according to the volume ratio of 1:1:2:16 to obtain acid liquor, and the acid liquor can react with aluminum but not silicon dioxide, so that the metal layer can be well removed.
In this embodiment, preform a is wet etched to obtain preform B, where fig. 3 is a cross-sectional view of preform B, as can be seen from fig. 3, in the wet etching process, an acid solution used in the wet etching process reacts with a metal but does not react with a silica layer, and then, in the wet etching process, the W1 layer is etched and removed first, the W1 layer and the M21 layer are connected, and after the W1 layer is removed by acid etching, the M21 layer is etched by acid etching, where microchannels are disposed between the M21 layer, the M22 layer, the M23 layer, the M24 layer, the M25 layer, and the M26 layer, and the acid solution etches the M21 layer, the M22 layer, the M23 layer, the M24 layer, the M25 layer, and the M26 layer in sequence along with the microchannels, so as to obtain preform B; and as can be seen from fig. 3, in the layer of M2, due to the function of the micro-channel, the width of the hollow is reduced, so that the hollow area is reduced, and the upper film is prevented from sticking to the lower film, so that a vibratable cavity is formed.
The fourth step: depositing a parylene layer on the upper surface of the silica layer, the etched and removed W1 layer and the etched and removed M2 layer of the preform B obtained in the third step by using a chemical vapor deposition method to obtain a preform C;
in this embodiment, the chemical vapor deposition method includes the following steps:
s1, baking the prefabricated product B for 3 hours at the temperature of 60 ℃ to remove the surface of the prefabricated product B and the water vapor inside the prefabricated product B;
s2, preparing a Micro-90 release agent with the volume concentration of 5% by using purified water, dipping the release agent by using a cotton cloth ball without dropping down, and completely coating the places such as the inner wall of a deposition chamber of a coating machine and the like which do not need to be coated;
s3, hanging the prefabricated product B after the water vapor is removed on a support screen plate in a coating machine, then opening a coupling agent adding port of the coating machine, injecting 5mL KH-570 silane coupling agent by using an injector, spin-coating silane coupling agent (the spin-coating time is 2h), then injecting parylene, and spin-coating parylene (the required injection is usually 1 μm in thickness formed by 1g of parylene, and the spin-coating time is 3.5h), wherein the total spin-coating time is 5.5 h.
In this embodiment, fig. 4 is a cross-sectional view of the structure of preform C, and as shown in fig. 4, parylene layers are deposited on the upper surface of the silica layer in preform B, the etched W1 layer and the etched M2 layer, in order to block the corroded small holes, so that the cavity can be in a vacuum state, and secondly, water can be prevented from penetrating into the device to cause the actual effect of the device when the device is subsequently operated in water; the parylene film is prepared by adopting a unique vacuum vapor deposition process, and a completely conformal polymer film coating is formed by the growth of active small molecules on the surface of a substrate, can be coated on the surfaces of various shapes, including sharp edges, cracks and inner surfaces, and has the advantage that other coatings are not comparable.
The fifth step: and carrying out secondary reactive ion deep etching on the prefabricated product C obtained in the fourth step to obtain the transducer.
In this embodiment, the etching parameters of the second reactive ion deep etching include: etching gas CHF with a volume ratio of 4:13And oxygen, the power of the RIE source is 60W, the etching uniformity is 93%, the numerical values of the specific parameters are not specifically limited in this embodiment, and can be adjusted by those skilled in the art according to actual needs.
In this embodiment, fig. 5 is a cross-sectional view of the transducer structure, and as can be seen from fig. 5, a second reactive ion etch back is used to remove the parylene layer and the silica layer on the top surface of the M4 layer in preform C, as well as the parylene layer and the silica layer disposed perpendicular to the M4 layer and not protected by the M4 layer and the M3 layer.
The transducer obtained in this example 1 was subjected to a performance test according to the following test standards: the standard ultrasonic probe is used as a receiving end, and the transmitting performance of the developed transducer is tested; using an impedance analyzer, adding 1V AC signal, 40V DC signal, and a scanning range of 20KHz-1MHz]The ultrasonic intensity was measured to be 6.5W/cm2The ultrasonic frequency is 2000KHz, and the array test meets the standard.
Example 2
In this embodiment, the upper electrode plate layer and the first lead layer are made of aluminum, the first metal layer is shaped like a solid cylinder, the radius of the bottom surface is 1 μm, and the height of the side surface is 0.5 μm; the second metal layer is in the shape of a hollow cylinder, the excircle radius of the bottom surface is 4 microns, the inner circle radius of the bottom surface is 2 microns, and the height of the side surface is 0.6 microns; the third metal layer is in the shape of a hollow cylinder, the excircle radius of the bottom surface is 8 microns, the inner circle radius of the bottom surface is 6 microns, and the height of the side surface is 0.6 microns; the first lead layer is in a cuboid shape, the length of the cuboid is 15 micrometers, the width of the cuboid is 0.3 micrometers, and the height of the cuboid is 0.5 micrometers; the lower-level plate metal layer is made of aluminum, is in a cuboid shape, and has the length of 250 micrometers, the width of 250 micrometers and the height of 0.5 micrometers; the lower insulating layer of the lower plate is made of silicon dioxide, is in a cuboid shape, and has the length of 250 micrometers, the width of 250 micrometers and the height of 1.65 micrometers; the second lead layer is made of aluminum; the insulating layer is made of silicon dioxide and is filled among the upper plate layer, the first lead layer, the second lead layer and the lower plate layer; the aluminum layer in the insulating layer is in a cuboid shape, the length of the cuboid is 2 micrometers, the width of the cuboid is 0.3 micrometers, and the height of the cuboid is 0.5 micrometers; the first tungsten layer is in a cuboid shape, the cuboid is 0.1 μm in length, 0.3 μm in width and 0.5 μm in height; the second tungsten layer is in a cuboid shape, the cuboid is 0.1 μm in length, 0.3 μm in width and 0.5 μm in height; the third tungsten layer is in a cuboid shape, the cuboid is 0.1 μm in length, 0.3 μm in width and 0.5 μm in height; (ii) a The first hollow layer is cylindrical, the radius of the bottom surface is 0.8 mu m, and the height of the side surface is 0.5 mu m; the second hollow layer is in the shape of a hollow cylinder, the excircle radius of the bottom surface is 3.5 mu m, the inner circle radius is 2.5 mu m, and the height of the side surface is 0.5 mu m; the third hollow layer is in the shape of a hollow cylinder, the excircle radius of the bottom surface is 7.5 mu m, the inner circle radius is 6.5 mu m, and the height of the side surface is 0.5 mu m.
This embodiment further provides a method for manufacturing a transducer, which is different from embodiment 1 only in that the etching parameters of the first reactive ion etchback and the second reactive ion etchback include: etching gas CHF with volume ratio of 3:13And oxygen, the power of the RIE source is 50W, and the etching uniformity is 90%.
The transducer obtained in this example 2 was subjected to a performance test in the same manner as in example 1, and the ultrasonic intensity measured was 7W/cm2The ultrasonic frequency is 2000KHz, and the array test meets the standard.
Example 3
In this embodiment, the upper electrode plate layer and the first lead layer are made of aluminum, the first metal layer is shaped like a solid cylinder, the radius of the bottom surface is 100 μm, and the height of the side surface is 0.6 μm; the second metal layer is in the shape of a hollow cylinder, the excircle radius of the bottom surface is 400 microns, the inner circle radius of the bottom surface is 200 microns, and the height of the side surface is 0.6 microns; the third metal layer is in the shape of a hollow cylinder, the excircle radius of the bottom surface is 700 mu m, the inner circle radius of the bottom surface is 500 mu m, and the height of the side surface is 0.6 mu m; the first lead layer is in a cuboid shape, the length of the cuboid is 25 micrometers, the width of the cuboid is 0.7 micrometers, and the height of the cuboid is 0.6 micrometers; the lower-level plate metal layer is made of aluminum and is shaped like a cuboid, the length of the lower-level plate metal layer is 350 micrometers, the width of the lower-level plate metal layer is 350 micrometers, and the height of the lower-level plate metal layer is 0.6 micrometers; the lower insulating layer of the lower plate is made of silicon dioxide, is in a cuboid shape, and has the length of 350 microns, the width of 350 microns and the height of 0.6 microns; the second lead layer is made of aluminum and is in a cuboid shape, the length of the cuboid is 25 micrometers, the width of the cuboid is 0.7 micrometers, and the height of the cuboid is 0.6 micrometers; the insulating layer is made of silicon dioxide and is filled among the upper plate layer, the first lead layer, the second lead layer and the lower plate layer; the aluminum layer in the insulating layer is in a cuboid shape, the length of the cuboid is 100 micrometers, the width of the cuboid is 0.7 micrometers, and the height of the cuboid is 0.6 micrometers; the first tungsten layer is in a cuboid shape, the length of the cuboid is 20 microns, the width of the cuboid is 0.7 microns, and the height of the cuboid is 0.6 microns; the second tungsten layer is in a cuboid shape, the length of the cuboid is 20 micrometers, the width of the cuboid is 0.7 micrometers, and the height of the cuboid is 0.6 micrometers; the third tungsten layer is in a cuboid shape, the length of the cuboid is 20 micrometers, the width of the cuboid is 0.7 micrometers, and the height of the cuboid is 3 micrometers; the first hollow layer is cylindrical, the radius of the bottom surface is 80 mu m, and the height of the side surface is 0.6 mu m; the second hollow layer is in the shape of a hollow cylinder, the outer circle radius of the bottom surface is 395 mu m, the inner circle radius is 205 mu m, and the height of the side surface is 0.6 mu m; the third hollow layer is in the shape of a hollow cylinder, the outer circle radius of the bottom surface is 695 mu m, the inner circle radius is 505 mu m, and the height of the side surface is 0.6 mu m.
This embodiment further provides a method for manufacturing a transducer, which is different from embodiment 1 only in that the etching parameters of the first reactive ion etchback and the second reactive ion etchback include: etching gas CHF with volume ratio of 6:13And oxygen, the power of the RIE source is 80W, and the etching uniformity is 95%.
The transducer obtained in this example 3 was subjected to a performance test in the same manner as in example 1, and the ultrasonic intensity measured was 8W/cm2Ultrasonic frequency of 2300KHz, array test symbolAnd (5) meeting the standard.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (10)
1. A transducer, characterized in that the transducer comprises: the device comprises a first component, a second component and a third component for connecting the first component and the second component;
the first assembly comprises an upper layer plate layer and a first lead layer;
the second assembly includes a lower stage board layer and a second lead layer;
the third assembly comprises an insulating layer, and a conducting layer, a parylene layer and a hollow layer which are positioned in the insulating layer;
the upper polar plate layer, the first lead layer and the second lead layer are all suspended above the lower polar plate layer;
the upper electrode plate layer is connected with the first lead layer through a conducting layer in the third assembly;
the lower plate layer and the second lead layer are connected through a conductive layer in the third assembly.
2. The transducer of claim 1, wherein the top plate layer comprises a first metal layer, a second metal layer disposed around an outer periphery of the first metal layer, and a third metal layer disposed around an outer periphery of the second metal layer;
preferably, the first metal layer is a solid cylinder, the radius of the bottom surface of the cylinder is 0-100 μm, preferably 5 μm, and the height of the side surface is 0.5-0.6 μm, preferably 0.55 μm;
preferably, the second metal layer is a hollow cylinder, the outer circle radius of the bottom surface of the hollow cylinder is 4-400 μm, preferably 15 μm, the inner circle radius of the bottom surface is 2-200 μm, preferably 7 μm, and the height of the side surface is 0.5-0.6 μm, preferably 0.55 μm;
preferably, the third metal layer is a hollow cylinder, the outer circle radius of the bottom surface of the hollow cylinder is 8-700 μm, preferably 25 μm, the inner circle radius of the bottom surface is 6-500 μm, preferably 17 μm, and the height of the side surface is 0.5-0.6 μm, preferably 0.55 μm;
preferably, the first lead layer is arranged at the outer periphery of the third metal layer and is spaced from the third metal layer;
preferably, the first lead layer has a shape of a rectangular parallelepiped having a length of 15 to 25 μm, preferably 20 μm, a width of 0.3 to 0.7 μm, preferably 0.5 μm, and a height of 0.5 to 0.6 μm, preferably 0.55 μm;
preferably, the upper plate layer and the first lead layer are both made of aluminum.
3. The transducer of claim 1 or 2, wherein the lower plate layer comprises a metal layer and a lower insulating layer located on a lower bottom surface of the metal layer;
preferably, the metal layer is made of aluminum;
preferably, the lower insulating layer is made of silicon dioxide;
preferably, the shape of the metal layer is a cuboid, the length of the cuboid is 250-350 μm, preferably 300 μm, the width of the cuboid is 250-350 μm, preferably 300 μm, and the height of the cuboid is 0.5-0.6 μm, preferably 0.55 μm;
preferably, the lower insulating layer is in the shape of a rectangular parallelepiped, the rectangular parallelepiped has a length of 250-350 μm, preferably 300 μm, a width of 250-350 μm, preferably 300 μm, and a height of 1.5-1.8 μm, preferably 1.65 μm;
preferably, the second lead layer has a shape of a rectangular parallelepiped having a length of 15 to 25 μm, preferably 20 μm, a width of 0.3 to 0.7 μm, preferably 0.5 μm, and a height of 0.5 to 0.6 μm, preferably 0.55 μm;
preferably, the second lead layer is made of aluminum.
4. The transducer according to any of claims 1-3, wherein the insulating layer is made of silicon dioxide;
preferably, the conductive layer comprises an aluminum layer and a tungsten layer arranged perpendicular to the aluminum layer;
preferably, the tungsten layer comprises a first tungsten layer, a second tungsten layer and a third tungsten layer which are arranged in parallel at intervals;
preferably, the electrical signal of the upper plate layer is conducted to the first lead layer sequentially through the first tungsten layer, the aluminum layer and the second tungsten layer;
preferably, the electrical signal of the lower plate layer is conducted to the second lead layer through the third tungsten layer;
preferably, the aluminum layer is in the shape of a cuboid having a length of 2-100 μm, preferably 8 μm, a width of 0.3-0.7 μm, preferably 0.5 μm, and a height of 0.5-0.6 μm, preferably 0.55 μm;
preferably, the first tungsten layer is in the shape of a cuboid having a length of 0.1-20 μm, preferably 5 μm, a width of 0.3-0.7 μm, preferably 0.5 μm, and a height of 0.5-0.6 μm, preferably 0.55 μm;
preferably, the second tungsten layer is in the shape of a cuboid having a length of 0.1-20 μm, preferably 5 μm, a width of 0.3-0.7 μm, preferably 0.5 μm, and a height of 0.5-0.6 μm, preferably 0.55 μm;
preferably, the third tungsten layer is in the shape of a cuboid having a length of 0.1-20 μm, preferably 5 μm, a width of 0.3-0.7 μm, preferably 0.5 μm, and a height of 2.5-3 μm, preferably 2.75 μm;
preferably, the parylene layer and the hollow layer are both arranged below the conductive layer in parallel, and the vertical distance between the parylene layer and the conductive layer is 0.5-0.6 μm, preferably 0.55 μm;
preferably, the hollow layer comprises a first hollow layer, a second hollow layer arranged around the outer periphery of the first hollow layer, and a third hollow layer arranged around the outer periphery of the second hollow layer;
preferably, the first hollow layer is in the shape of a cylinder, the radius of the bottom surface of the cylinder is 0-100 μm, preferably 3 μm, and the height of the side surface is 0.5-0.6 μm, preferably 0.55 μm;
preferably, the second hollow layer is in the shape of a hollow cylinder having a base inner circle radius of 2.5 to 205 μm, preferably 9 μm, a base outer circle radius of 3.5 to 395 μm, preferably 13 μm, and a side height of 0.5 to 0.6 μm, preferably 0.55 μm;
preferably, the third hollow layer is in the shape of a hollow cylinder having a base inner circle radius of 6.5 to 505 μm, preferably 19 μm, a base outer circle radius of 7.5 to 695 μm, preferably 23 μm, and a side height of 0.5 to 0.6 μm, preferably 0.55 μm;
preferably, the parylene layer is disposed at an outer periphery of the third hollow layer.
5. The method of manufacturing a transducer according to any one of claims 1 to 4, comprising: and sequentially carrying out primary etching, film coating and secondary etching on the bare chip to obtain the transducer.
6. The method for manufacturing the semiconductor device, according to claim 5, wherein the bare chip is designed by Cadence virtuoso software and then manufactured;
preferably, the structure of the bare chip comprises a non-metal oxide layer, a metal layer distributed inside the non-metal oxide layer, and a silicon nitride layer positioned on the upper surface of the non-metal oxide layer;
preferably, the non-metal oxide layer is a silicon dioxide layer;
preferably, the metal layer comprises an aluminum layer and a tungsten layer;
preferably, the number of the aluminum layers is 5, and the aluminum layers sequentially comprise an M1 layer, an M2 layer, an M3 layer, an M4 layer and an M5 layer from bottom to top;
preferably, the number of the tungsten layers is 4, and the tungsten layers sequentially comprise a W1 layer, a W2 layer, a W3 layer and a W4 layer from left to right;
preferably, the W1 is used for vertically connecting the M2 layer and the M5 layer, the W2 layer and the W3 layer are both used for vertically connecting the M3 layer and the M4 layer, and the W4 layer is used for vertically connecting the M1 layer and the M4 layer.
7. The preparation method according to claim 5 or 6, wherein the primary etching comprises sequentially performing primary reactive ion deep etching and wet etching on the bare chip;
preferably, the first reactive ion deep etching is dry etching;
preferably, the etching parameters of the first reactive ion deep etching include: the etching gas is CHF3And oxygen, the power of the RIE source is 50-80W, and the etching uniformity is 90-95%;
preferably, the CHF3CHF in mixed gas with oxygen3The volume ratio of the oxygen to the oxygen is (3-6) to 1;
preferably, the first reactive ion etching comprises etching to remove the silicon nitride layer and the silicon dioxide layer on the upper surface of the M5 layer in the bare chip and the silicon dioxide layer which is arranged perpendicular to the M5 layer and is not protected by the M5 layer to obtain a prefabricated product A;
preferably, the wet etching comprises acid etching;
preferably, the preparation method of the acid solution for acid etching comprises the following steps: mixing phosphoric acid, nitric acid, glacial acetic acid and deionized water according to the volume ratio of 1:1:2:16 to obtain the mixture;
preferably, the wet etching comprises etching away the W1 layer and the M2 layer of preform a, resulting in preform B.
8. A production method according to any one of claims 5 to 7, wherein said plating film comprises depositing a parylene layer on the upper surface of the silica layer in preform B, the etched-away W1 layer and the etched-away partial M2 layer to obtain preform C;
preferably, the deposition mode is a chemical vapor deposition method.
9. The production method according to any one of claims 5 to 8, wherein the secondary etching is a secondary reactive ion deep etching;
preferably, the second reactive ion deep etching is dry etching;
preferably, the etching parameters of the second reactive ion deep etching include: the etching gas is a mixed gas of CHF3 and oxygen, the power of the RIE source is 50-80W, and the etching uniformity is 90-95%;
preferably, the volume ratio of CHF3 to oxygen in the mixed gas of CHF3 and oxygen is (3-6): 1;
preferably, the second reactive ion etchback includes removing the parylene layer and the silica layer on the upper surface of the M4 layer in the preform C, and the parylene layer and the silica layer disposed perpendicular to the M4 layer and not protected by the M4 layer and the M3 layer, to obtain the transducer.
10. Use of a transducer according to any of claims 1-4 in ultrasound imaging.
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| CN102538850A (en) * | 2012-01-04 | 2012-07-04 | 无锡智超医疗器械有限公司 | Capacitor micro-electromechanical ultrasonic sensor and manufacturing method thereof |
| WO2017205658A1 (en) * | 2016-05-25 | 2017-11-30 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching on microdevices and nanodevices |
| CN110369247A (en) * | 2019-01-23 | 2019-10-25 | 深圳市德力凯医疗设备股份有限公司 | A kind of annular array transducer and preparation method |
| CN110510573A (en) * | 2019-08-30 | 2019-11-29 | 中国科学院深圳先进技术研究院 | A kind of capacitive micromachined ultrasonic transducer and its preparation method and application |
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| CN108793061B (en) * | 2018-05-25 | 2020-11-27 | 岭南师范学院 | Preparation method of full-electrode convex-pattern structure CMUT device |
| CN111348612B (en) * | 2020-03-13 | 2023-06-27 | 深圳先进技术研究院 | Transducer and preparation method and application thereof |
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| CN102538850A (en) * | 2012-01-04 | 2012-07-04 | 无锡智超医疗器械有限公司 | Capacitor micro-electromechanical ultrasonic sensor and manufacturing method thereof |
| WO2017205658A1 (en) * | 2016-05-25 | 2017-11-30 | The Regents Of The University Of Colorado, A Body Corporate | Atomic layer etching on microdevices and nanodevices |
| CN110369247A (en) * | 2019-01-23 | 2019-10-25 | 深圳市德力凯医疗设备股份有限公司 | A kind of annular array transducer and preparation method |
| CN110510573A (en) * | 2019-08-30 | 2019-11-29 | 中国科学院深圳先进技术研究院 | A kind of capacitive micromachined ultrasonic transducer and its preparation method and application |
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| WO2021179663A1 (en) * | 2020-03-13 | 2021-09-16 | 深圳先进技术研究院 | Transducer, and manufacturing method therefor and application thereof |
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