WO2021174615A1 - 量子点显示面板及其制备方法 - Google Patents

量子点显示面板及其制备方法 Download PDF

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Publication number
WO2021174615A1
WO2021174615A1 PCT/CN2020/081561 CN2020081561W WO2021174615A1 WO 2021174615 A1 WO2021174615 A1 WO 2021174615A1 CN 2020081561 W CN2020081561 W CN 2020081561W WO 2021174615 A1 WO2021174615 A1 WO 2021174615A1
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Prior art keywords
quantum dot
layer
color
display panel
pixel definition
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PCT/CN2020/081561
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English (en)
French (fr)
Inventor
张良芬
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/756,085 priority Critical patent/US11362148B2/en
Publication of WO2021174615A1 publication Critical patent/WO2021174615A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
    • B41M3/003—Printing processes to produce particular kinds of printed work, e.g. patterns on optical devices, e.g. lens elements; for the production of optical devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/0041—Digital printing on surfaces other than ordinary paper
    • B41M5/0047—Digital printing on surfaces other than ordinary paper by ink-jet printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M7/00—After-treatment of prints, e.g. heating, irradiating, setting of the ink, protection of the printed stock
    • B41M7/0081—After-treatment of prints, e.g. heating, irradiating, setting of the ink, protection of the printed stock using electromagnetic radiation or waves, e.g. ultraviolet radiation, electron beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present application relates to the technical field of display panel manufacturing, in particular to a quantum dot display panel and a manufacturing method thereof.
  • QD(Quantum Dot (quantum dot) display technology belongs to the innovative semiconductor nanocrystal technology, which can accurately transmit light, efficiently improve the color gamut value and viewing angle of the display screen, make the color more pure and bright, and make the color performance more tense.
  • the display using this technology can not only It produces dynamic colors with a wider range of color gamut, and can also show real color palettes in image quality, surpassing the traditional backlight technology.
  • OLED refers to a diode that uses organic semiconductor materials and light-emitting materials to emit light through carrier injection and recombination under electric field drive.
  • QD-OLED display panels combine OLED electroluminescence technology and quantum dot QD photoluminescence technology, including An OLED array substrate emitting blue light, a quantum dot photoconversion film, and a color filter (Color Filter, referred to as CF).
  • the QD-OLED display panel uses blue OLED as the light source to excite the red/green quantum dots in the quantum dot photoconversion film.
  • the QD-OLED display panel After receiving the blue light, the red quantum dots will excite red light to pass through the color filter, and the green quantum dots After receiving the blue light, it will excite green light to pass through the color filter, and the blue light will directly pass through the color filter to form a full-color display. Therefore, the QD-OLED display panel has a wide color gamut and wide viewing angle. The performance is regarded as a potential technology for large-size OLEDs.
  • This application provides a quantum dot display panel and a preparation method thereof.
  • quantum dot particles need to be prepared into ink droplets, and then ink-jetted into the corresponding pixel definition area, and then used Thermal or ultraviolet curing, black hydrophobic materials with strong light-shielding ability are set on both sides of the pixel definition area, resulting in incomplete curing of the underlying quantum dot particles, and there is a gap between the side of the pixel definition area, which affects the light of the quantum dot particle photoconversion film Conversion efficiency and brightness, in the case of a large viewing angle display, the luminescence spectrum and brightness observed from all directions change greatly with the observation angle, resulting in large viewing angle deviation and poor brightness, and technical problems affecting display quality.
  • the application also provides a quantum dot display panel, including:
  • the color film substrate includes a base substrate and a color resist layer on the surface of the base substrate.
  • the color resist layer is divided into R/G/B color resists, and no R/G/B color resists are arranged between adjacent R/G/B color resists. Black matrix.
  • a pixel definition layer includes a high-level cushion and a light-shielding layer covering the high-level cushion, the high-level cushion and the light-shielding layer form a superimposed layer, and the superimposed layer is located adjacent to the R/G /B color resistors and aligned with the R/G/B color resistors to form a pixel definition area of the array.
  • the quantum dot photoconversion film is formed in the pixel definition area.
  • An array substrate and a blue light display device located on the array substrate, the color filter substrate and the array substrate are arranged in a pair, and the blue light display device is arranged opposite to the quantum dot photoconversion film.
  • the quantum dot display panel has a top-emission structure, and the color film substrate, the quantum dot photoconversion film, the blue light display device, and the array substrate are sequentially along the light emission direction set up.
  • the cushion layer is a SiN/SiO film or an organic film
  • the light-shielding layer is a black matrix
  • the thickness of the superimposed layer of the cushion layer and the light shielding layer is greater than or equal to 6 um.
  • the cross section of the pixel defining area is an isosceles trapezoid, and the quantum dot photoconversion film is attached to both sides of the isosceles trapezoid.
  • each R/G/B color resist and its corresponding light-emitting layer jointly define a sub-pixel on the quantum dot display panel.
  • the color resist layer is a B color resist
  • the quantum dot photoconversion film corresponding to the B color resist is not provided with quantum dot particles.
  • an organic protective layer is provided between the color filter substrate and the pixel definition layer, and the material of the organic protective layer is a transparent organic film or an optical transparent glue.
  • the blue light display device is an OLED display device or a Mini-LED display device.
  • the present application also provides a quantum dot display panel, including:
  • the color film substrate includes a base substrate and a color resist layer on the surface of the base substrate.
  • the color resist layer is divided into R/G/B color resists, and no R/G/B color resists are arranged between adjacent R/G/B color resists. Black matrix.
  • the pixel definition layer is arranged on the surface of the color filter substrate, and is arranged in alignment with the R/G/B color resist to form an array of pixel definition areas; and a quantum dot photoconversion film is formed in the pixel definition area.
  • the pixel definition layer includes a high-level cushion and a light-shielding layer covering the high-level cushion, and the superimposed layer of the high-level cushion and the light-shielding layer is located between the adjacent R/G/B color resists .
  • the quantum dot display panel further includes an array substrate and a blue light display device located on the array substrate, the color film substrate and the array substrate are arranged in pairs, and the blue light display device It is arranged opposite to the quantum dot photoconversion film.
  • the blue light display device is an OLED display device or a Mini-LED display device.
  • the quantum dot display panel has a top-emitting structure, and the color film substrate, the quantum dot photoconversion film, the blue light display device, and the array substrate are sequentially arranged along the light emitting direction.
  • the cushion layer is a SiN/SiO film or an organic film
  • the light-shielding layer is a black matrix
  • the thickness of the superimposed layer of the cushion layer and the light-shielding layer is greater than or equal to 6um.
  • the cross section of the pixel defining area is an isosceles trapezoid, and the quantum dot photoconversion film is attached to both sides of the isosceles trapezoid.
  • each R/G/B color resist and its corresponding light-emitting layer jointly define a sub-pixel on the quantum dot display panel.
  • the color resist layer is a B color resist
  • the quantum dot photoconversion film corresponding to the B color resist is not provided with quantum dot particles.
  • an organic protective layer is provided between the color filter substrate and the pixel definition layer, and the material of the organic protective layer is a transparent organic film or an optical transparent glue.
  • the present application also provides a method for manufacturing a quantum dot display panel, including:
  • Step 1 Provide a base substrate, prepare a color resist layer on the base substrate, and complete the preparation of the color filter substrate;
  • Step 2 Prepare a pixel definition layer on the color filter substrate, the pixel definition layers are arranged at intervals to form a pixel definition area, and the quantum dot particles are printed into the pixel definition area in the form of ink droplets by inkjet printing technology, Then, ultraviolet light is used for curing to complete the preparation of the quantum dot photoconversion film;
  • Step 3 attach the quantum dot photoconversion film to the corresponding blue display device and the surface of the array substrate.
  • a pixel definition layer is prepared on the color filter substrate, and the pixel definition layers are arranged at intervals to form a pixel definition area, and the quantum dot particles are printed to the In the pixel definition area, then UV curing is used to complete the preparation of the quantum dot photoconversion film.
  • the specific step 2 includes:
  • a high-level cushion and a light-shielding layer covering the high-level cushion are arranged on the surface of the color filter substrate, the high-level cushion and the light-shielding layer are laminated to form a pixel definition layer, and the thickness of the pixel definition layer is greater than or equal to 6um .
  • the quantum dot display panel in this application includes a color filter substrate, a pixel definition layer located on the surface of the color filter substrate, and a quantum dot photoresist in the pixel definition area of the pixel definition layer.
  • the thickness of the pixel definition layer is greater than or equal to 6um, which is beneficial to the quantum dot photoconversion
  • the quantum dots in the film are uniformly cured and adhere to the side of the pixel definition layer seamlessly.
  • the blue light source is emitted from the blue display device to excite the quantum dot photoconversion film and emit Pure light, the pure light is transformed into corresponding colors through the color resistance, so that the emitted light is softer, more uniform, and higher brightness, which improves the color gamut and viewing angle of the display device, thereby improving the display quality of the quantum dot display panel.
  • FIG. 1 is a schematic diagram of the structure of a quantum dot display panel provided by this application.
  • FIG. 2 is a schematic diagram of the structure of a quantum dot OLED display panel provided by this application;
  • FIG. 3 is a schematic diagram of a manufacturing process of a quantum dot display panel provided by this application.
  • FIG. 4 is a schematic diagram of the preparation structure of a color film substrate in a quantum dot display panel provided by this application;
  • FIG. 5 is a schematic diagram of the preparation structure of a cushion layer in a quantum dot display panel provided by this application;
  • FIG. 6 is a schematic diagram of the preparation structure of a light shielding layer in a quantum dot display panel provided by this application;
  • FIG. 7 is a schematic diagram of the preparation structure of a quantum dot photoconversion film in a quantum dot display panel provided by this application;
  • FIG. 8 is a schematic diagram of a cured structure of a quantum dot photoconversion film in a quantum dot display panel provided by this application;
  • FIG. 9 is a schematic diagram of the preparation structure of a quantum dot display panel provided by this application.
  • This application addresses the need to prepare quantum dot particles into ink droplets during the preparation process of the photoconversion film in the prior art, and then ink-jet them into the corresponding pixel definition area, and then use heat or ultraviolet curing, and shading is provided on both sides of the pixel definition area.
  • the black hydrophobic material with strong ability results in incomplete curing of the underlying quantum dot particles, and there is a gap between the side of the pixel definition area, which affects the light conversion efficiency and brightness of the quantum dot particle photoconversion film.
  • This embodiment can solve this defect.
  • the present application provides a quantum dot display panel 100.
  • the quantum dot display panel 100 includes a color filter substrate 101, including a base substrate 1011, and a color resist layer on the surface of the base substrate 1011.
  • the layers are divided into R/G/B color resists.
  • the color resist layer includes a red sub-color resister 1012, a green sub-color resister 1013, and a blue sub-color resister 1014. No black is set between any two adjacent sub-color resisters.
  • the color filter substrate is further provided with an organic protective layer 1015 on the color resist layer away from the first substrate 1011.
  • the material of the organic protective layer 1015 is a transparent organic film or optically transparent glue; the pixel definition layer 102 is provided on the surface 101 of the color filter substrate, The pixel definition area is arranged in alignment with the R/G/B color resistance to form an array.
  • the cross section of the pixel definition area is preferably an isosceles trapezoid.
  • the pixel definition layer 102 includes a cushion layer 1021 and a light shielding layer 1022 covering the cushion layer 1021, The superimposed layer of the cushion layer 1021 and the light-shielding layer 1022 is located between the adjacent R/G/B color resists; and the quantum dot photoconversion film 103 is formed in the pixel definition area.
  • the quantum dot photoconversion film 103 includes the first A quantum dot photoconversion film 1031, a second quantum dot photoconversion film 1032, and a third quantum dot photoconversion film 1033, a first quantum dot photoconversion film 1031, a second quantum dot photoconversion film 1032 And the first quantum dot photoconversion film 1033 is arranged in the pixel definition area, and is attached to both sides of the pixel definition layer 102, and the third quantum dot photoconversion film 1033 is arranged in alignment with the blue sub-color resist 1015, The third quantum dot photoconversion film 1033 is vacant, and no quantum dot particles are provided.
  • the quantum dot display panel 100 also includes an array substrate 105 and a blue display device 104 on the array substrate 105.
  • the color film substrate 101 and the array substrate 105 are arranged in pairs, and the blue display device 104 is arranged opposite to the quantum dot photoconversion film 103.
  • the blue display device 104 is preferably an OLED display device or a Mini-LED display device, the quantum dot display panel 100 is preferably a top-emitting structure, the color film substrate 101, the quantum dot photoconversion film 103, the blue display device 104, and the array substrate 105 Set in sequence along the light emitting direction.
  • each R/G/B color resistance and its corresponding blue light-emitting layer in the blue display device jointly define a sub-pixel, and the color film substrate frequency spectrum and quantum dot photoconversion film corresponding to the same sub-pixel are The emission spectrum and the emission layer spectrum basically coincide.
  • the blue light source is emitted from the blue light display device 104 to excite the quantum dot photoconversion film 103 to emit pure light, and the pure light passes through the color resistance to become the corresponding color, so that the emitted light is softer, more uniform, and brighter.
  • the color gamut and viewing angle of the display device are improved, thereby improving the display quality of the quantum dot display panel.
  • the pixel definition layer 102 is arranged at intervals to form a plurality of pixel definition regions, the pixel definition regions are filled with quantum dot particles to form the quantum dot photoconversion film 103, and the pixel definition regions and the R in the color resist layer 1017 /G/B color resistance alignment setting; if the pixel definition layer 102 is set in one layer, and the pixel definition layer 102 is all made of black light-shielding hydrophobic material, the pixel definition layer 102 cannot reach 6um.
  • the quantum dot particles are in the form of ink droplets Drop into the pixel definition area and use heat or ultraviolet curing.
  • the curing speed of the quantum dot particles at the bottom of the pixel definition area is different from the curing speed of the quantum dot particles on the surface, resulting in the quantum dot particles in the bottom layer and the bottom or side of the pixel definition area. There are gaps, which affect the conversion efficiency and brightness of the quantum dot photoconversion film.
  • the pixel definition layer 102 is prepared into two layers, including a cushion layer 1021, and a light-shielding layer 1022 covering the cushion layer 1021, and
  • the light-shielding layer 1022 and the light-shielding layer 1021 have the same patterned shape, and the light-shielding layer 1022 covers the light-shielding layer 1021 to avoid light leakage from the quantum dot photoconversion film 102 and facilitate the thickness of the superimposed layer of the light-shielding layer 1021 and the light-shielding layer 1022 to be greater than or equal to 6um
  • the cushion layer 1021 is a SiN/SiO film or an organic film
  • the light shielding layer 1022 is a black matrix, which is conducive to uniform curing of the quantum dot particles 1021 at the bottom or surface of the pixel definition area, and fits seamlessly on the side of the pixel definition layer, while avoiding
  • the quantum dot display panel 100 produces light mixing and light leakage phenomena.
  • the quantum dot display panel 100 in this embodiment includes a color filter substrate 101, a pixel definition layer 102 located on the surface of the color filter substrate 101, a quantum dot photoconversion film 103 located in the pixel definition area of the pixel definition layer, The blue display device 104 located under the quantum dot photoconversion film 103 and the array substrate 105 located under the blue display device 104.
  • the blue display device 104 is an OLED display device or Mini-LED display device.
  • the blue display device 104 emits light 1040
  • the array substrate 105 is a TFT thin film transistor substrate.
  • the array substrate 105 includes a second substrate 1051, a TFT layer disposed on the surface of the second substrate.
  • the second substrate 1051 is preferably a glass substrate or a transparent plastic substrate, and the TFT layer is located on the surface of the second substrate 1051.
  • a second light-shielding layer 1052 provided on the second substrate 1051, a buffer layer 1053 provided on the second substrate 1051 and covering the second light-shielding layer 1052, an active layer 1054 provided on the buffer layer 1053,
  • the source electrode 10581 and the drain electrode 10582 are provided on the interlayer insulating layer 1057, the passivation layer 10591 that is provided on the interlayer insulating layer 1057 and covers the source electrode 10581 and the drain electrode 10582, is provided on the second interlayer insulating layer 1094 for passivation
  • the active layer 1054 includes a channel region corresponding to the gate insulation 1056, and a source contact region and a drain contact region located on both sides of the channel region respectively.
  • the source contact region and the drain contact region are conductive metal
  • the oxide semiconductor material, the material of the channel region is a metal oxide semiconductor material that maintains semiconductor characteristics.
  • the interlayer insulating layer 1057 is provided with a source contact hole and a drain contact hole corresponding to the source contact area and the drain contact area respectively, and the source electrode 10581 and the drain electrode 10582 are respectively in contact with the drain electrode through the source contact hole.
  • the hole and the source contact area of the active layer 1054 are electrically connected to the drain contact area, and the orthographic projection of the second light shielding layer 1052 on the second substrate 1051 covers the orthographic projection of the active layer 1052 on the second substrate 1051, thereby
  • the second light shielding layer 1052 can completely cover the active layer 1054, preventing the active layer 1054 from being irradiated by light, and avoiding the negative drift of the threshold voltage of the TFT layer.
  • the blue light display device 104 is located on the TFT layer and includes an anode layer 1041, a second pixel defining layer 1042 located above the anode layer 1041, a light emitting layer 1043 located on the surface of the second pixel defining layer 1042, and a cathode layer 1044 located on the surface of the light emitting layer 1043 ,
  • the encapsulation layer 1045 disposed on the side of the cathode layer 1044 away from the TFT layer, and the quantum dot photoconversion film 103 is attached to the encapsulation layer 1045.
  • the pixel defining layer 1042 is separately arranged to form pixel openings.
  • the part of the light-emitting layer 1043 that is open to the pixel is tiled on the anode layer 202, and the part of the cathode layer 1044 that is open to the pixel is tiled on the light-emitting layer 1043.
  • the anode 1041 is connected to the TFT through the anode via hole.
  • the drain electrode 10582 in the layer is in electrical contact.
  • the source electrode 10581 of the TFT layer is connected to the positive electrode of the external power source.
  • the cathode layer 1044 is electrically connected to the negative electrode of the external power source through the power wiring layer.
  • the anode 1041 and the cathode layer 1044 are arranged between When the DC voltage is 2V to 10V, the anode 1041 generates holes and the cathode layer 1044 generates electrons. When they meet in the light-emitting layer 1043, the electrons and holes are respectively negatively and positively charged. They attract each other and excite the organic material in the light-emitting layer 1043 to emit light. In order to realize the normal operation of the quantum dot OLED display panel. Through the magnitude of the voltage between the anode 1041 and the cathode layer 1044, the light-emitting brightness of the light-emitting layer 1043 can be adjusted. The higher the voltage, the higher the brightness, and vice versa.
  • the three primary colors of red, green and blue can be produced to form the basic colors.
  • the light-emitting layer 1043 of the present embodiment preferably emits blue light, which can more easily excite the efficiency and brightness of light converted by the quantum dots in the quantum dot photoconversion film 102.
  • the blue light display device 104 is a liquid crystal display device, and a corresponding liquid crystal display panel and a corresponding backlight module are arranged under the quantum dot photoconversion film.
  • the present application also provides a method for manufacturing a quantum dot display panel, including:
  • Step 1 Provide a base substrate, prepare a color resist layer on the base substrate, and complete the preparation of the color filter substrate;
  • Step 2 Prepare a pixel definition layer on the color filter substrate, the pixel definition layers are arranged at intervals to form a pixel definition area, and the quantum dot particles are printed into the pixel definition area in the form of ink droplets by inkjet printing technology, Then, ultraviolet light is used for curing to complete the preparation of the quantum dot photoconversion film;
  • Step 3 attach the quantum dot photoconversion film to the corresponding blue display device and the surface of the array substrate.
  • a pixel definition layer is prepared on the color filter substrate, the pixel definition layers are arranged at intervals to form a pixel definition area, and the quantum dot particles are printed into the pixel definition area in the form of ink droplets by inkjet printing technology, Then, ultraviolet light is used for curing to complete the preparation of the quantum dot photoconversion film.
  • the specific step 2 includes:
  • a high-level cushion and a light-shielding layer covering the high-level cushion are arranged on the surface of the color filter substrate, the high-level cushion and the light-shielding layer are laminated to form a pixel definition layer, and the thickness of the pixel definition layer is greater than or equal to 6um .
  • step 1 as shown in FIG. 4, a base substrate 1011 is provided, a color resist layer is prepared on the base substrate 1011, and the color resist layer is divided into R/G/B color resists. , There is no black matrix between any two adjacent R/G/B color resistors.
  • the color resistor layer includes a red sub-color resistor 1012, a green sub-color resistor 1013, and a blue sub-color resistor 1014 in the color group layer.
  • An organic protective layer 1015 is prepared on the surface.
  • the organic protective layer 1015 is preferably an organic transparent film or an optically transparent adhesive layer to complete the preparation of the color filter 101; step 2, as shown in FIGS.
  • the cushion layer 1021 and the light-shielding layer 1022 covering the cushion layer 1021 are prepared.
  • the cushion layer 1021 and the light-shielding layer 1022 are laminated to form the pixel definition layer 102.
  • the pixel definition layer 102 is preferably an isosceles trapezoid.
  • the pixel definition layer 102 is arranged separately to form a pixel definition.
  • the specific preparation method of the pixel defining layer 102 is as follows. A SiN/SiO film or organic layer is coated on the organic protective layer 1015, and the SiN/SiO film or organic layer is patterned through a photomask to form a high-rise layer. 1021.
  • the dot photoconversion film 1031, the second quantum dot photoconversion film 1032, and the third quantum dot photoconversion film 1033 shrink, and the boundary is seamlessly attached to the pixel definition layer 102, completing the preparation of the quantum dot photoconversion film 103 Step 3, as shown in Figure 9, the quantum dot photoconversion film 103 is attached to the corresponding blue display device 104 and the corresponding array substrate 105.
  • the quantum dot display panel in this application includes a color filter substrate, a pixel definition layer located on the surface of the color filter substrate, and a quantum dot photoresist in the pixel definition area of the pixel definition layer.
  • the thickness of the pixel definition layer is greater than or equal to 6um, which is beneficial to the quantum dot photoconversion
  • the quantum dots in the film are uniformly cured and adhere to the side of the pixel definition layer seamlessly.
  • the blue light source is emitted from the blue display device to excite the quantum dot photoconversion film and emit Pure light, the pure light is transformed into corresponding colors through the color resistance, so that the emitted light is softer, more uniform, and higher brightness, which improves the color gamut and viewing angle of the display device, thereby improving the display quality of the quantum dot display panel.

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Abstract

一种量子点显示面板（100）及其制备方法，包括彩膜基板（101）、彩膜基板（101）表面的像素定义层（102）、位于像素定义层（102）的像素定义区中的量子点光致转换膜（103）、以及位于量子点光致转换膜（103）下方的蓝光显示器件（104），像素定义层（102）设置了垫高层（1021）和遮光层（1022），确保了像素定义层（102）的厚度大于或等于6um，有利于量子点光致转换膜（103）中量子点均匀固化。

Description

量子点显示面板及其制备方法 技术领域
本申请涉及显示面板制造技术领域，尤其涉及一种量子点显示面板及其制备方法。
 背景技术
随着显示技术的蓬勃发展，高色域已经成为一个重要发展方向。高色域意味着显示画面具有更加丰富多彩的色彩，具有更强的色彩展现能力。QD(Quantum Dot，量子点)显示技术属于创新半导体纳米晶体技术，可以准确输送光线，高效提升显示屏的色域值以及视角，让色彩更加纯净鲜艳，使色彩表现更具张力，采用该技术的显示器不仅能产生色域范围更广的动态色彩，还能在画质中展现真实的色板，超越了传统意义上的背光技术。
随着柔性曲面触控显示技术的快速发展，相关领域技术更新也是日新月异。例如OLED是指利用有机半导体材料和发光材料在电场驱动下，通过载流子注入和复合导致发光的二极管，QD-OLED显示面板结合了OLED电致发光技术以及量子点QD光致发光技术，包括一发射蓝光的OLED阵列基板、一量子点光致转换膜以及一彩色滤光片(Color Filter，简称CF)。QD-OLED显示面板利用蓝光OLED作为光源，激发量子点光致转换膜中红/绿量子点，红色量子点在接收到蓝光之后，会激发出红光通过彩色滤光片透出，绿色量子点在接收到蓝光之后，会激发出绿光通过彩色滤光片透出，蓝光会直接透过彩色滤光片，从而形成全彩显示，因此QD-OLED显示面板具有广色域，广视角等优异的性能，视为大尺寸OLED的潜在技术。
由于现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题，需要改进。
 技术问题
本申请提供一种量子点显示面板及其制备方法，能够现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请还提供了一种量子点显示面板，包括：
彩膜基板，包括衬底基板、以及位于所述衬底基板表面的色阻层，所述色阻层划分有R/G/B色阻，相邻R/G/B色阻之间未设置黑色矩阵。
像素定义层，所述像素定义层包括垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层形成叠加层，该叠加层位于相邻的所述R/G/B色阻之间，且与所述R/G/B色阻对位设置形成阵列的像素定义区。
量子点光致转换膜，形成在所述像素定义区内。
阵列基板、以及位于所述阵列基板上的蓝光显示器件，所述彩膜基板与所述阵列基板对组设置，所述蓝光显示器件与所述量子点光致转换膜相对设置。
根据本申请一优选实施例，所述量子点显示面板为顶发射型结构，所述彩膜基板、所述量子点光致转换膜、所述蓝光显示器件、以及所述阵列基板沿出光方向依次设置。
根据本申请一优选实施例，所述垫高层为SiN/SiO薄膜或者有机薄膜，所述遮光层为黑色矩阵。
根据本申请一优选实施例，所述垫高层与所述遮光层的叠加层的厚度大于或等于6um。
根据本申请一优选实施例，所述像素定义区的截面为等腰梯形，所述量子点光致转换膜贴合于所述等腰梯形的两侧设置。
根据本申请一优选实施例，在所述量子点显示面板上每一R/G/B色阻与其对应的所述发光层共同定义出一子像素。
根据本申请一优选实施例，所述色阻层为B色阻，所述B色阻对应的量子点光致转换膜不设置量子点粒子。
根据本申请一优选实施例，所述彩膜基板与所述像素定义层之间设置有机保护层，所述有机保护层的材料为透明有机薄膜或者光学透明胶。
根据本申请一优选实施例，所述蓝光显示器件为OLED显示器件或Mini-LED显示器件。
为实现上述目的，本申请还提供了一种量子点显示面板，包括：
彩膜基板，包括衬底基板、以及位于所述衬底基板表面的色阻层，所述色阻层划分有R/G/B色阻，相邻R/G/B色阻之间未设置黑色矩阵。
像素定义层，设置在所述彩膜基板表面，与所述R/G/B色阻对位设置形成阵列的像素定义区；以及量子点光致转换膜，形成在所述像素定义区内。
其中，所述像素定义层包括垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层的叠加层位于相邻的所述R/G/B色阻之间。
根据本申请一优选实施例，所述量子点显示面板还包括阵列基板、以及位于所述阵列基板上的蓝光显示器件，所述彩膜基板与所述阵列基板对组设置，所述蓝光显示器件与所述量子点光致转换膜相对设置。
根据本申请一优选实施例，所述蓝光显示器件为OLED显示器件或Mini-LED显示器件。
根据本申请一优选实施例，所述量子点显示面板为顶发射型结构，所述彩膜基板、所述量子点光致转换膜、所述蓝光显示器件、以及阵列基板沿出光方向依次设置。
根据本申请一优选实施例，所述垫高层为SiN/SiO薄膜或者有机薄膜，所述遮光层为黑色矩阵，所述垫高层与所述遮光层的叠加层的厚度大于或等于6um。
根据本申请一优选实施例，所述像素定义区的截面为等腰梯形，所述量子点光致转换膜贴合于所述等腰梯形的两侧设置。
根据本申请一优选实施例，在所述量子点显示面板上每一R/G/B色阻与其对应的所述发光层共同定义出一子像素。
根据本申请一优选实施例，所述色阻层为B色阻，所述B色阻对应的量子点光致转换膜不设置量子点粒子。
根据本申请一优选实施例，所述彩膜基板与所述像素定义层之间设置有机保护层，所述有机保护层的材料为透明有机薄膜或者光学透明胶。
依据上述量子点显示面板，本申请还提供一种量子点显示面板的制备方法，包括：
步骤1，提供衬底基板，在所述衬底基板上制备色阻层，完成彩膜基板的制备；
步骤2，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备；
步骤3，将量子点光致转换膜贴合于相应蓝光显示器件以及阵列基板表面。
根据本申请一优选实施例，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备的具体步骤2包括：
在所述彩膜基板表面设置垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层叠加以形成像素定义层，且所述像素定义层的厚度大于或等于6um。
 有益效果
本申请提供一种量子点显示面板及其制备方法，本申请中量子点显示面板包括彩膜基板、位于彩膜基板表面的像素定义层、位于像素定义层的像素定义区中的量子点光致转换膜、以及位于量子点光致转换膜下方的蓝光显示器件，由于所述像素定义层设置了垫高层和遮光层，确保了像素定义层的厚度大于或等于6um，有利于量子点光致转换膜中量子点均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板产生混光和漏光现象，从蓝光显示器件中出射蓝色光源，激发量子点光致转换膜，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请提供一种量子点显示面板结构示意图；
图2为本申请提供一种量子点OLED显示面板结构示意图；
图3为本申请提供一种量子点显示面板的制备流程示意图；
图4为本申请提供一种量子点显示面板中彩膜基板的制备结构示意图；
图5为本申请提供一种量子点显示面板中垫高层的制备结构示意图；
图6为本申请提供一种量子点显示面板中遮光层的制备结构示意图；
图7为本申请提供一种量子点显示面板中量子点光致转换膜的制备结构示意图；
图8为本申请提供一种量子点显示面板中量子点光致转换膜的固化后结构示意图；
图9为本申请提供一种量子点显示面板的制备结构示意图。
本申请的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示，图中虚线表示在结构中并不存在的，仅仅说明结构的形状和位置。
本申请针对现有技术中光致转换膜制备过程中，需要将量子点粒子制备成墨滴，然后喷墨到相应的像素定义区中，然后采用热或紫外线固化，像素定义区两侧设置遮光能力强的黑色疏水材料，导致底层的量子点粒子固化不完全，与像素定义区的侧面之间存在间隙，影响量子点粒子光致转换膜光的转化效率和亮度，在大视角显示情况下，从各个方向观测到的发光光谱和亮度随观测角度变化而出现较大变化，导致大视角色偏和亮度较差，影响显示品质的技术问题，本实施例能够解决该缺陷。
如图1所示，本申请提供一种量子点显示面板100，该量子点显示面板100包括：彩膜基板101，包括衬底基板1011、以及位于衬底基板1011表面的色阻层，色阻层划分有R/G/B色阻，例如色阻层包括一红色子色阻1012、一绿色子色阻1013、一蓝色子色阻1014，任意相邻两个子色阻之间未设置黑色矩阵，彩膜基板在色阻层远离第一基板1011还设置有有机保护层1015，有机保护层1015的材料为透明有机薄膜或者光学透明胶；像素定义层102，设置在彩膜基板表面101，与R/G/B色阻对位设置形成阵列的像素定义区，像素定义区的截面优选为等腰梯形，像素定义层102包括垫高层1021、以及覆盖在垫高层1021上的遮光层1022，垫高层1021与遮光层1022的叠加层位于相邻的R/G/B色阻之间；以及量子点光致转换膜103，形成在像素定义区内，例如量子点光致转换膜103包括第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033，第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第一量子点光致转换膜1033均设置在像素定义区中，贴合于像素定义层102的两侧设置，第三量子点光致转换膜1033与蓝色子色阻1015对位设置，第三量子点光致转换膜1033空出，不设置量子点粒子。
该量子点显示面板100还包括阵列基板105，以及位于阵列基板105上的蓝光显示器件104，彩膜基板101与阵列基板105对组设置，蓝光显示器件104与量子点光致转换膜103相对设置。蓝光显示器件104优选为OLED显示器件或Mini-LED显示器件，量子点显示面板100优选为顶发射型结构，彩膜基板101、量子点光致转换膜103、蓝光显示器件104、以及阵列基板105沿出光方向依次设置。在量子点OLED显示面板100上，每一R/G/B色阻与其对应的蓝光显示器件中发光层共同定义出一子像素，同一子像素对应的彩膜基板频谱、量子点光致转换膜发光光谱以及发光层光谱基本重合。从蓝光显示器件104中出射蓝色光源，激发量子点光致转换膜103，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。
具体地，本实施例中像素定义层102间隔设置以形成多个像素定义区，像素定义区填充有量子点粒子以形成量子点光致转换膜103，且像素定义区与色阻层1017中R/G/B色阻对位设置；若像素定义层102采用一层设置，且像素定义层102全部采用黑色遮光疏水性材料，像素定义层102无法达到6um，当量子点粒子以墨滴的形式滴入到像素定义区中，采用热或紫外线固化，像素定义区底层的量子点粒子的固化速度和表面的量子点粒子固化速度不一样，导致底层的量子点粒子与像素定义区底部或侧部存在间隙，影响量子点光致转换膜的转化效率和亮度，因此本实施例中将像素定义层102制备成两层，包括包括垫高层1021、以及覆盖在垫高层1021上的遮光层1022，且遮光层1022和垫高层1021图案化的形状相同，且遮光层1022覆盖垫高层1021，避免量子点光致转换膜102漏光情况，便于垫高层1021与遮光层1022的叠加层的厚度大于或等于6um，垫高层1021为SiN/SiO薄膜或者有机薄膜，遮光层1022为黑色矩阵，有利于像素定义区中底部或表面的量子点粒子1021均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板100产生混光和漏光现象。
如图2所示，本实施例中量子点显示面板100包括彩膜基板101、位于彩膜基板101表面的像素定义层102、位于像素定义层的像素定义区中量子点光致转换膜103、位于量子点光致转换膜103下方的蓝光显示器件104、以及位于蓝光显示器件104下的阵列基板105，蓝光显示器件104为OLED显示器件或Mini-LED显示器件，蓝光显示器件104发射光线1040，阵列基板105为TFT薄膜晶体管基板，该阵列基板105包括第二基板1051、设置于第二基板表面的TFT层、第二基板1051优选为玻璃基板或透明塑料基板，TFT层位于第二基板1051表面，包括设于第二基板1051上的第二遮光层1052、设于第二基板1051上且覆盖第二遮光层1052的缓冲层1053、设于缓冲层1053上的有源层1054、设于有源层1054上的栅绝缘层1055、设于栅绝缘层1055上的栅极1056、设于缓冲层1053上且覆盖有源层1054、栅绝缘层1055以及栅极1056的层间绝缘层1057，设于层间绝缘层1057上源极10581和漏极10582，设于层间绝缘层1057上且覆盖源极10581和漏极10582的钝化层10591，设于第二层间绝缘层1094钝化层10591上的平坦化层10592。其中，有源层1054包括对应于栅绝1056下方的沟道区以及分别位于沟道区两侧的源极接触区与漏极接触区，源极接触区与漏极接触区为导体化的金属氧化物半导体材料，沟道区的材料为保持半导体特性的金属氧化物半导体材料。在层间绝缘层1057上设有分别对应于源极接触区与漏极接触区上方的源极接触孔与漏极接触孔，源极10581与漏极10582分别通过源极接触孔与漏极接触孔和有源层1054的源极接触区与漏极接触区电性连接，第二遮光层1052在第二基板1051上的正投影覆盖有源层1052在第二基板1051上的正投影，从而使第二遮光层1052能够对有源层1054进行完全遮盖，防止有源层1054受到光线照射，避免了TFT层的阈值电压产生负漂。
蓝光显示器件104位于TFT层上，包括阳极层1041，位于阳极层1041上方的第二像素定义层1042、位于第二像素定义层1042表面的发光层1043、以及位于发光层1043表面的阴极层1044，设置于阴极层1044远离TFT层一侧的封装层1045，量子点光致转换膜103贴合于封装层1045设置。像素定义层1042分离设置形成像素开口，发光层1043对于像素开口的部分平铺在阳极层202上，阴极层1044对于像素开口的部分平铺在发光层1043上，阳极1041通过阳极过孔与TFT层中漏极10582电性接触，该TFT层的源极10581与外接电源的正极相连，阴极层1044通过电源走线层与外接电源的负极电性连接，当阳极1041与阴极层1044之间设置为2V至10V的直流电压时，阳极1041产生空穴，阴极层1044产生电子，在发光层1043相遇，电子和空穴分别带负电和正电，它们相互吸引，激发发光层1043中有机材料发光，以实现量子点OLED显示面板的正常工作。通过阳极1041与阴极层1044之间电压的大小，可调整发光层1043发光亮度，电压越大，亮度越高，反之越暗。依其不同的配方，可产生红、绿、蓝（R、G、B）三基色，构成基本色彩。本实施例发光层1043优选发出蓝光，蓝光更容易激发量子点光致转换膜102中量子点转化光的效率和亮度。
在另一实施例中，蓝光显示器件104为液晶显示装置，在量子点光致转换膜下方设置相应的液晶显示面板和相应的背光模组。
依据上述量子点显示面板，如图3所示，本申请还提供一种量子点显示面板的制备方法，包括：
步骤1，提供衬底基板，在所述衬底基板上制备色阻层，完成彩膜基板的制备；
步骤2，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备；
步骤3，将量子点光致转换膜贴合于相应蓝光显示器件以及阵列基板表面。
优选地，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备的具体步骤2包括：
在所述彩膜基板表面设置垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层叠加以形成像素定义层，且所述像素定义层的厚度大于或等于6um。
具体地，如图4至图9所示，步骤1，如图4所示，提供衬底基板1011，在衬底基板1011上制备色阻层，色阻层划分有R/G/B色阻，任意相邻两个R/G/B色阻之间未设置有黑色矩阵，色阻层包括一红色子色阻1012、一绿色子色阻1013、一蓝色子色阻1014在色组层表面制备有机保护层1015，该有机保护层1015优选为有机透明薄膜或者光学透明胶层，完成彩色滤光片101的制备；步骤2，如图5和图6所示，在彩膜基板101上制备垫高层1021以及覆盖垫高层1021的遮光层1022，垫高层1021和遮光层1022叠层以形成像素定义层102，像素定义层102优选为等腰梯形，像素定义层102分离设置以形成像素定义区10212，像素定义层102具体地制备方法如下，在有机保护层1015上涂布一层SiN/SiO薄膜或者有机层，通过光罩对SiN/SiO薄膜或者有机层进行图案化处理，形成垫高层1021，在有机保护层1015上涂布光阻层，通过光罩对光阻层进行图案化处理，形成凹槽，且凹槽位于垫高层1021表面，在凹槽沉积一层黑色矩阵材料，形成遮光层1022；或者，在有机保护层1015上涂布一层SiN/SiO薄膜或者有机层，通过光罩对SiN/SiO薄膜或者有机层进行图案化处理，形成垫高层1021，在有机保护层1015上沉积一层黑色矩阵材料，通过光罩对黑色矩阵材料进行图案化处理，形成遮光层1022，且遮光层1022覆盖垫高层1021，其中，垫高层1021和遮光层1022的厚度之和大于或等于6um；如图7和图8所示，通过喷墨打印技术将量子点粒子以墨滴方式打印到不同像素定义区10212中，形成有第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033，第一量子点光致转换膜1031与红色子色阻1012对位设置，第二量子点光致转换膜1032与绿色子色阻1013对位设置，第三量子点光致转换膜1033与蓝色子色阻1015对位设置，第三量子点光致转换膜1033空出，不设置量子点粒子，采用紫外线进行固化，第一量子点光致转换膜1031、第二量子点光致转换膜1032、以及第三量子点光致转换膜1033收缩，边界与像素定义层102无缝隙贴合，完成量子点光致转换膜103的制备；步骤3，如图9所示，将量子点光致转换膜103贴合于相应蓝光显示器件104、以及相应阵列基板105。
本申请提供一种量子点显示面板及其制备方法，本申请中量子点显示面板包括彩膜基板、位于彩膜基板表面的像素定义层、位于像素定义层的像素定义区中的量子点光致转换膜、以及位于量子点光致转换膜下方的蓝光显示器件，由于所述像素定义层设置了垫高层和遮光层，确保了像素定义层的厚度大于或等于6um，有利于量子点光致转换膜中量子点均匀固化，无缝隙地贴合于像素定义层侧面，同时避免量子点显示面板产生混光和漏光现象，从蓝光显示器件中出射蓝色光源，激发量子点光致转换膜，发出纯净光，纯净光透过色阻变成相应的色彩，从而实现出射光更柔和、更均匀、亮度更高，提高了显示器件色域和视角，从而提升量子点显示面板显示品质。
综上，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种量子点显示面板，其包括：
    彩膜基板，包括衬底基板、以及位于所述衬底基板表面的色阻层，所述色阻层划分有R/G/B色阻，相邻R/G/B色阻之间未设置黑色矩阵；
    像素定义层，其中，所述像素定义层包括垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层的叠加层，位于相邻的所述R/G/B色阻之间，与所述R/G/B色阻对位设置形成阵列的像素定义区[A1]；
    量子点光致转换膜，形成在所述像素定义区内；
    阵列基板、以及位于所述阵列基板上的蓝光显示器件，所述彩膜基板与所述阵列基板对组设置，所述蓝光显示器件与所述量子点光致转换膜相对设置。
  2. 根据权利要求1所述的量子点显示面板，其中，所述量子点显示面板为顶发射型结构，所述彩膜基板、所述量子点光致转换膜、所述蓝光显示器件、以及阵列基板沿出光方向依次设置。
  3. 根据权利要求1所述的量子点显示面板，其中，所述垫高层为SiN/SiO薄膜或者有机薄膜，所述遮光层为黑色矩阵。
  4. 根据权利要求3所述的量子点显示面板，其中，所述垫高层与所述遮光层的叠加层的厚度大于或等于6um。
  5. 根据权利要求1所述的量子点显示面板，其中，所述像素定义区的截面为等腰梯形，所述量子点光致转换膜贴合于所述等腰梯形的两侧设置。
  6. 根据权利要求1所述的量子点显示面板，其中，在所述量子点显示面板上每一R/G/B色阻与其对应的所述蓝光显示器件的发光层共同定义出一子像素。
  7. 根据权利要求6所述的量子点显示面板，其中，所述色阻层为B色阻，所述B色阻对应的量子点光致转换膜不设置量子点粒子。
  8. 根据权利要求1所述的量子点显示面板，其中，所述彩膜基板与所述像素定义层之间设置有机保护层，所述有机保护层的材料为透明有机薄膜或者光学透明胶。
  9. 根据权利要求1所述的量子点显示面板，其中，所述蓝光显示器件为OLED显示器件或Mini-LED显示器件。
  10. 一种量子点显示面板，其包括：
    彩膜基板，包括衬底基板、以及位于所述衬底基板表面的色阻层，所述色阻层划分有R/G/B色阻，相邻R/G/B色阻之间未设置黑色矩阵；
    像素定义层，设置在所述彩膜基板表面，与所述R/G/B色阻对位设置形成阵列的像素定义区；以及，
    量子点光致转换膜，形成在所述像素定义区内；
    其中，所述像素定义层包括垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层的叠加层位于相邻的所述R/G/B色阻之间。
  11. 根据权利要求10所述的量子点显示面板，其中，所述量子点显示面板还包括阵列基板、以及位于所述阵列基板上的蓝光显示器件，所述彩膜基板与所述阵列基板对组设置，所述蓝光显示器件与所述量子点光致转换膜相对设置。
  12. 根据权利要求11所述的量子点显示面板，其中，所述蓝光显示器件为OLED显示器件或Mini-LED显示器件。
  13. 根据权利要求11所述的量子点显示面板，其中，所述量子点显示面板为顶发射型结构，所述彩膜基板、所述量子点光致转换膜、所述蓝光显示器件、以及阵列基板沿出光方向依次设置。
  14. 根据权利要求10所述的量子点显示面板，其中，所述垫高层为SiN/SiO薄膜或者有机薄膜，所述遮光层为黑色矩阵，所述垫高层与所述遮光层的叠加层的厚度大于或等于6um。
  15. 根据权利要求10所述的量子点显示面板，其中，所述像素定义区的截面为等腰梯形，所述量子点光致转换膜贴合于所述等腰梯形的两侧设置。
  16. 根据权利要求10所述的量子点显示面板，其中，在所述量子点显示面板上每一R/G/B色阻与其对应的所述蓝光显示器件的发光层共同定义出一子像素。
  17. 根据权利要求16所述的量子点显示面板，其中，所述色阻层为B色阻，所述B色阻对应的量子点光致转换膜不设置量子点粒子。
  18. 根据权利要求10所述的量子点显示面板，其中，所述彩膜基板与所述像素定义层之间设置有机保护层，所述有机保护层的材料为透明有机薄膜或者光学透明胶。
  19. 一种量子点显示面板的制备方法，其包括：
    步骤1，提供衬底基板，在所述衬底基板上制备色阻层，完成彩膜基板的制备；
    步骤2，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备；
    步骤3，将量子点光致转换膜贴合于相应蓝光显示器件以及阵列基板表面。
  20. 根据权利要求19所述的量子点显示面板的制备方法，其中，在所述彩膜基板上制备像素定义层，所述像素定义层间隔设置以形成像素定义区，通过喷墨打印技术将量子点粒子以墨滴方式打印到所述像素定义区中，然后采用紫外线进行固化，完成量子点光致转换膜的制备的具体步骤2包括：
    在所述彩膜基板表面设置垫高层、以及覆盖在所述垫高层上的遮光层，所述垫高层与所述遮光层叠加以形成像素定义层，且所述像素定义层的厚度大于或等于6um。
PCT/CN2020/081561 2020-03-05 2020-03-27 量子点显示面板及其制备方法 Ceased WO2021174615A1 (zh)

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