WO2021169961A1

WO2021169961A1 - Packaging structure, packaging method, and electronic device

Info

Publication number: WO2021169961A1
Application number: PCT/CN2021/077493
Authority: WO
Inventors: 佘勇; 张立; 叶润清; 姚明军; 龙浩晖
Original assignee: 华为技术有限公司
Priority date: 2020-02-25
Filing date: 2021-02-23
Publication date: 2021-09-02
Also published as: CN111403353A

Abstract

Disclosed are a packaging structure, a packaging method and an electronic device, relating to the technical field of semiconductor packaging. The packaging structure comprises: a substrate comprising a bonding pad, with the bonding pad being arranged on the first surface of the substrate; a metal connecting column arranged on the surface of the bonding pad and connected to the bonding pad; and a first insulating layer covering the first surface of the substrate, wherein the first insulating layer is provided with a first via hole penetrating the first insulating layer; part or all of the metal connecting column is arranged inside the first via hole; the side surface of the metal connecting column is a curved surface; and the metal connecting column is used for transmitting an electric signal of the substrate. The packaging structure, the packaging method and the electronic device can overcome the problem that it is impossible to carry out substrate performance detection due to short circuiting between pads during the preparation process.

Description

Packaging structure, packaging method and electronic equipment

This application claims the priority of a Chinese patent application filed with the State Intellectual Property Office on February 25, 2020, the application number is 202010117628.5, and the application name is "encapsulation structure, packaging method, and electronic equipment". The entire content is incorporated into this by reference. Applying.

Technical field

This application relates to the field of semiconductor packaging technology, and in particular to a packaging structure, packaging method, and electronic equipment.

Background technique

With the development of semiconductor technology, low-cost, high-connectivity packaging structures have become the development trend of packaging technology. In the existing packaging structure, as shown in FIG. 1 a, an insulating layer 11 is formed on the surface of a base body 10, and the insulating layer 11 exposes a pad 12. Then, an electroplating process is used to form the hole-filling metal 13 to complete the signal transmission between the base 10 and the solder balls 14, and the base 10 is packaged.

However, the high cost of the electroplating process leads to high production costs. In addition, as shown in FIG. 1b, in order to prepare a plurality of hole-filling metals by an electroplating process, it is necessary to reserve a plating bridge 15 and connect each pad 12 on the surface of the substrate 10 to connect the cathode 18 of the electroplating tank together. However, since the pads 12 on the surface of the base body 10 are connected, the plurality of pads 12 are in a short-circuit state, and the conductive components electrically connected to the pads 12 are also in a short-circuit state. As a result, before the plating bridge 15 is finally etched to insulate the bonding pads 12, the performance test of the substrate 10 cannot be performed due to the short circuit between the bonding pads 12, which results in waste of scrap process.

Summary of the invention

The embodiments of the present application provide a packaging structure, a packaging method, and an electronic device, which overcome the problem that the performance of the substrate cannot be tested due to short circuits between pads during the manufacturing process.

In order to achieve the above objective, this embodiment adopts the following technical solutions:

In a first aspect, a package structure is provided, including: a base, the base includes a pad; the pad is arranged on a first surface of the base; a metal connecting pillar is arranged on the surface of the pad and is connected to the pad; and a first insulating layer , Covering the first surface of the substrate, the first insulating layer has a first via hole, the first via hole penetrates the first insulating layer; part or all of the metal connecting pillars are arranged in the first via hole; wherein, the metal connecting pillar The side surface is curved, and the metal connecting post is used to transmit the electrical signal of the substrate.

Here, in the base of the package structure, the multiple pads on the surface of the base are independent, there is no electroplating bridge required by the electroplating process, the structure is simple, and the structure of the package structure is also simplified. Moreover, there is no need to cut the plating bridge after the packaging is completed, which can simplify the process flow. Furthermore, the pads on the surface of the substrate in the package structure provided by the present application exist independently. Therefore, before encapsulating the substrate, the substrate can be directly screened for good products (such as leakage current detection), and waste substrates can be directly eliminated. There is no need to wait for good product screening after the packaging is completed, which can avoid process waste and reduce costs.

Optionally, the metal connecting post is prepared by a wire bonding process. No electroplating process is required, so there is no need to set the electroplating bridge required by the electroplating process, the process is simple, and the cost is low.

Optionally, the side surface of the metal connecting column is a spherical surface. When the metal connecting pillar is prepared by the electroplating process, the first via is prepared first, and the shape of the metal connecting pillar needs to be matched with the first via; and the metal connecting pillar through the wire bonding process is prepared first The metal connecting column is then formed with a matching first via hole according to the shape of the metal connecting column. The side surface of the metal connecting column obtained by the wire bonding process is curved or spherical or other shapes, the preparation method is simple, and the cost is saved. Optionally, the thickness of the metal connecting pillar in the first direction is greater than the thickness of the first insulating layer in the first direction; wherein, the first direction is a direction perpendicular to the substrate. In this way, there is no need to accurately set the metal connecting pillars to be flush with the first insulating layer, allowing appropriate process errors, and reducing the difficulty of preparing the metal connecting pillars.

Optionally, the thickness of the metal connecting pillar in the first direction is smaller than the thickness of the first insulating layer in the first direction; wherein, the first direction is a direction perpendicular to the substrate. In this way, there is no need to accurately set the metal connecting pillars to be flush with the first insulating layer, allowing appropriate process errors, and reducing the difficulty of preparing the metal connecting pillars.

Optionally, the substrate is a chip.

Optionally, the base body further includes an interdigital transducer, which is arranged on the first surface of the base body; the first insulating layer further has a second via hole, and the second via hole penetrates the first insulating layer; the interdigital transducer The energy device is arranged in the second via hole. It can be applied to wafer-level packaged surface acoustic wave filters to increase the yield of wafer-level packaged surface acoustic wave filters and simplify the structure of wafer-level packaged surface acoustic wave filters.

Optionally, the package structure further includes: a second insulating layer; the second insulating layer is disposed on the surface of the first insulating layer, the second insulating layer has a third via, and the third via penetrates the second insulating layer and is connected to the first insulating layer. The via holes are connected; part of the metal connecting posts are arranged in the third via holes. It can be applied to packaging structures including multiple insulating layers and has a wide range of applications.

Optionally, a protective cavity is formed between the second insulating layer, the first insulating layer and the base, and the interdigital transducer is located in the protective cavity. It can be applied to wafer-level packaged surface acoustic wave filters to increase the yield of wafer-level packaged surface acoustic wave filters and simplify the structure of wafer-level packaged surface acoustic wave filters.

Optionally, the sum of the thickness of the pad and the thickness of the metal connecting pillar is greater than or less than the sum of the thickness of the first insulating layer and the thickness of the second insulating layer. In this way, there is no need to accurately set the metal connecting pillars to be flush with the second insulating layer, allowing appropriate process errors, and reducing the difficulty of preparing the metal connecting pillars.

Optionally, the thickness of the metal connecting pillar in the first direction is h1, the thickness of the first insulating layer in the first direction is h2, and the thickness of the second insulating layer in the first direction is h3, where h1=( (h2+h3)-5μm)～((h2+h3)+5μm); wherein, the first direction is a direction perpendicular to the substrate. The size of the metal connecting pillar along the first direction is too small, and the processing process is complicated when the first insulating layer exposes the metal connecting pillar. In addition, when the second insulating layer covers the metal connecting pillars thickly, the second insulating layer exposes the metal connecting pillars, and the processing time is longer. By limiting the difference between the thickness of the metal connecting column and the sum of the thickness of the first insulating layer and the second insulating layer, the processing time is reduced and the complexity of the processing process is reduced.

Optionally, the second insulating layer includes a first sub-insulating layer and a second sub-insulating layer; the first sub-insulating layer is in direct contact with the first insulating layer, and the first sub-insulating layer, the first insulating layer and the substrate constitute a protective cavity. It can reduce the requirements for the process when preparing the second insulating layer, and broaden the application range of the process.

Optionally, the first insulating layer includes an organic insulating material. The preparation process of the organic insulating material is simple, the performance is stable, and the cost is low.

Optionally, the second insulating layer includes an organic insulating material. The preparation process of the organic insulating material is simple, the performance is stable, and the cost is low.

Optionally, the metal connecting post includes gold or silver. The resistance of the metal connecting column can be reduced, and the ductility of the metal connecting column can be improved.

Optionally, the package structure further includes a solder ball; the pad is disposed at one end of the metal connection post, the solder ball is disposed at the other end of the metal connection post relative to the pad, and the solder ball is connected to the metal connection post to transmit electricity from the substrate Signal. The external components of the package structure can be connected with the metal connection posts through solder balls, and the signals on the substrate can be transmitted to the components connected with the solder balls through the solder balls.

Optionally, the substrate is a chip, and an interdigital transducer is further provided on the substrate, and the interdigital transducer is provided on the first surface of the substrate; the first insulating layer further has a second via hole through which the second via hole penetrates The first insulating layer; the interdigital transducer is arranged in the second via; the package structure further includes: a second insulating layer; the second insulating layer is arranged on the surface of the first insulating layer, and the second insulating layer has a third via , The third via hole penetrates the second insulating layer and communicates with the first via; part of the metal connecting pillar is arranged in the third via; a protective cavity is formed between the second insulating layer, the first insulating layer and the base, and Means that the transducer is located in the protective cavity. It can be applied to wafer-level packaged surface acoustic wave filters to increase the yield of wafer-level packaged surface acoustic wave filters and simplify the structure of wafer-level packaged surface acoustic wave filters.

In a second aspect, an electronic device is provided, including a PCB board, and further including the packaging structure of any one of the first aspects, and the packaging structure is electrically connected to the PCB board. The structure of the electronic device can be simplified, and the cost of the electronic device can be reduced.

Optionally, the electronic device further includes a display module, a middle frame and a cover plate; the light emitting surface of the display module faces the cover plate, and the back of the display module faces the middle frame; the PCB board is arranged on the surface of the middle frame away from the display module. The packaging structure can be applied to electronic devices for display, and the cost of electronic devices for display can be reduced.

In a third aspect, a packaging method of a packaging structure is provided. The packaging structure includes a base, the base includes a pad, and the pad is disposed on a first surface of the base; the packaging method includes: forming a metal connecting pillar on the surface of the pad; It is formed by wire bonding process; the side of the metal connecting pillar is curved, and the metal connecting pillar is connected to the pad. The metal connecting pillar is used to transmit the electrical signal of the base; the first insulating layer is formed on the first surface of the base; the first insulating layer There is a first via hole, the first via hole penetrates the first insulating layer; part or all of the metal connection pillars are arranged in the first via hole. The packaging method provided by the embodiments of the present application uses a wire bonding process to form a metal connecting column with a curved side surface. Compared with the electroplating process used to form the hole-filling metal, it is necessary to form a barrier layer and a seed layer on the surface of the pad. In the method, the packaging method provided by the embodiment of the present application has a simple process for forming the metal connecting pillar and has a low cost. In addition, the metal connecting pillars are in direct contact with the pads, and other film layers (such as seed layers or barrier layers) are not interposed therebetween, which can reduce the risk of unstable connections between the metal connecting pillars and the pads due to film layer fracture. In addition, when the packaging method provided by the embodiment of the present application is used for packaging, before the packaging, the multiple pads on the surface of the substrate exist independently, and there is no electroplating bridge. Therefore, there is no need to cut the plating bridge after the packaging is completed, which can simplify the process flow.

Optionally, after forming the metal connecting pillar on the surface of the pad, a first insulating layer is formed on the first surface of the base body. In this way, there is no need to accurately form the metal connecting pillars in the first via holes on the first insulating layer, which can reduce the requirement on the alignment accuracy when forming the metal connecting pillars. In addition, when the metal connecting pillar is prepared by the electroplating process, the first via is prepared first, and the shape of the metal connecting pillar needs to be matched with the first via; and the metal connecting pillar through the wire bonding process is The metal connecting pillar is prepared first, and then the matching first via hole is formed according to the shape of the metal connecting pillar. The side surface of the metal connecting column obtained by the wire bonding process is curved or spherical or other shapes, the preparation method is simple, and the cost is saved.

Optionally, the substrate is a chip, and the substrate further includes an interdigital transducer; the interdigital transducer is arranged on the first surface of the substrate; the first insulating layer formed on the first surface of the substrate further has a second via hole. The two via holes penetrate the first insulating layer, and the interdigital transducer is located in the second via hole. It can be applied to wafer-level packaged surface acoustic wave filters to increase the yield of wafer-level packaged surface acoustic wave filters and simplify the structure of wafer-level packaged surface acoustic wave filters.

Optionally, the packaging method further includes: forming a second insulating layer on a side of the first insulating layer away from the base; the second insulating layer has a third via hole, the third via hole penetrates the second insulating layer, and the third via hole is connected to The first via hole communicates; part of the metal connection pillars are arranged in the third via hole. It can be applied to packaging structures including multiple insulating layers and has a wide range of applications.

Optionally, forming the second insulating layer on the side of the first insulating layer away from the base includes: forming a second insulating film layer on the surface of the first insulating layer away from the base, the second insulating film layer being formed by a lamination process; A third via hole is formed on the second insulating film layer to form a second insulating layer. By adopting a lamination process to form the second insulating film layer, a relatively simple and mature process can be used to form a protective cavity for placing the interdigital transducer.

Optionally, the packaging method further includes: forming a third insulating layer on a side of the second insulating layer away from the base; the third insulating layer has a fourth via, the fourth via penetrates the third insulating layer, and the fourth via is connected to the The third via hole is connected; part of the metal connecting pillar is arranged in the fourth via hole. In this way, there is no need to limit the thickness of the second insulating layer, and therefore, there is no need to limit the process used to form the second insulating layer, which can improve the applicable range of the process.

Optionally, forming the third insulating layer on the side of the second insulating layer away from the base includes: forming a third insulating film layer on the surface of the second insulating layer away from the base, the third insulating film layer being formed by a lamination process; A fourth via hole is formed on the third insulating film layer to form a third insulating layer. The third insulating layer can be formed in a relatively simple and mature process.

Optionally, forming the first insulating layer on the first surface of the base includes: forming a first insulating film layer on the first surface of the base; and forming a first via hole and a second via hole on the first insulating film layer. The first insulating layer can be formed in a relatively simple and mature process.

Optionally, the packaging method further includes: forming a solder ball on one end of the metal connection post; the solder ball is disposed at the other end of the metal connection post relative to the pad, and the solder ball is connected to the metal connection post for transmitting electrical signals of the substrate. The external components of the package structure can be connected with the metal connection posts through solder balls, and the signals on the substrate can be transmitted to the components connected with the solder balls through the solder balls.

Optionally, the substrate is a chip, and an interdigital transducer is further provided on the substrate, and the interdigital transducer is provided on a first surface of the substrate; forming a first insulating layer on the first surface of the substrate includes: A first insulating film layer is formed on the first surface; a first via hole and a second via hole are formed on the first insulating film layer to form a first insulating layer; the second via hole penetrates the first insulating layer, interdigitated The device is located in the second via hole; wherein, after the metal connecting pillar is formed on the surface of the pad, a first insulating layer is formed on the first surface of the base; the packaging method further includes: forming a second insulating layer on the surface of the first insulating layer away from the base. Insulating film layer; forming a third via hole on the second insulating film layer to form a second insulating layer; the third via hole penetrates the second insulating layer, and the third via hole communicates with the first via hole; part of the metal connecting pillar It is arranged in the third via hole; a protection cavity is formed between the second insulation layer, the first insulation layer and the base, and the interdigital transducer is located in the protection cavity. It can be applied to wafer-level packaged surface acoustic wave filters to increase the yield of wafer-level packaged surface acoustic wave filters and simplify the structure of wafer-level packaged surface acoustic wave filters.

Description of the drawings

FIG. 1a is a schematic diagram of a packaging method of a packaging structure provided by related technologies;

FIG. 1b is a schematic diagram of the structure of the substrate in the package structure provided by the related technology;

FIG. 2 is a schematic structural diagram of an electronic device provided by an embodiment of this application;

FIG. 3 is a flowchart of a packaging method provided by an embodiment of the application;

4a is a structural relationship diagram between metal connecting pillars and pads in a package structure provided by an embodiment of the application;

4b is a structural relationship diagram between metal connecting pillars and pads in another package structure provided by an embodiment of the application;

5a-5e are schematic diagrams of the packaging process of a packaging structure provided by an embodiment of the application;

FIG. 6a is a schematic structural diagram of another package structure provided by an embodiment of the application;

Fig. 6b is a schematic diagram of the connection between a package structure and a PCB provided by an embodiment of the application;

FIG. 6c is a schematic diagram of the connection between another package structure and the PCB provided by an embodiment of the application;

FIG. 7 is a schematic structural diagram of a substrate in a package structure provided by an embodiment of the application; FIG.

FIG. 8 is a flowchart of another packaging method provided by an embodiment of the application;

9-11b are schematic diagrams of the packaging process of another packaging structure provided by an embodiment of the application;

FIG. 11c is a structural relationship diagram between a metal connecting pillar and a second insulating layer provided by an embodiment of the application; FIG.

11d is a structural relationship diagram between another metal connecting pillar and the second insulating layer provided by an embodiment of the application;

FIG. 11e is a structural diagram of a second insulating layer in a package structure provided by an embodiment of the application; FIG.

FIG. 12 is a schematic structural diagram of another package structure provided by an embodiment of the application;

FIG. 13a is a schematic structural diagram of a package structure in another related technology provided by an embodiment of the application; FIG.

FIG. 13b is a schematic structural diagram of a substrate in another package structure provided by an embodiment of the application; FIG.

FIG. 14 is a flowchart of yet another packaging method provided by an embodiment of the application;

15a is a schematic diagram of a preparation process of a first insulating layer provided by an embodiment of the application;

15b is a schematic diagram of a preparation process of a first insulating layer provided by an embodiment of the application;

15c is a structural relationship diagram between a metal connecting pillar and a first insulating layer provided by an embodiment of the application;

15d is a structural relationship diagram between another metal connecting pillar and the first insulating layer provided by an embodiment of the application;

15e is a structural relationship diagram between another metal connecting pillar and the second insulating layer provided by an embodiment of the application;

15f is a structural relationship diagram between another metal connecting pillar and the second insulating layer provided by an embodiment of the application;

15g is a structural relationship diagram between another metal connecting pillar and the second insulating layer provided by an embodiment of the application;

15h is a schematic structural diagram of yet another package structure provided by an embodiment of the application;

FIG. 16 is a flowchart of yet another packaging method provided by an embodiment of the application;

FIG. 17a is a schematic diagram of a preparation process of a first insulating layer and a second insulating layer according to an embodiment of the application;

FIG. 17b is a structural relationship diagram between a metal connecting pillar and a first insulating layer and a second insulating layer according to an embodiment of the application;

FIG. 17c is a structural relationship diagram between another metal connecting pillar and the first insulating layer and the second insulating layer according to an embodiment of the application;

FIG. 17d is a structural relationship diagram between another metal connecting pillar and the second insulating layer provided by an embodiment of the application; FIG.

FIG. 17e is a structural relationship diagram between another metal connecting pillar and the second insulating layer provided by an embodiment of the application; FIG.

FIG. 17f is a schematic structural diagram of yet another packaging structure provided by an embodiment of the application.

Reference signs:

1-electronic equipment; 2-display module; 3-middle frame; 4-shell; 5-cover plate; 10-substrate; 11-insulation layer; 12-pad; 13-filling metal; 14-solder ball 15-plating bridge; 16-interdigital transducer; 17-functional component; 18-cathode; 20-metal connecting column; 30-first insulating layer; 31-first insulating film layer; 32-first via ; 33-second via; 40-second insulating layer; 41-second insulating film layer; 42-third via; 43-first sub-insulating layer; 44-second sub-insulating layer; 51-wall layer ; 52-roof layer; 53-metal connector.

Detailed ways

The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments.

Hereinafter, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with "first", "second", etc. may explicitly or implicitly include one or more of these features.

In addition, in this application, the azimuthal terms such as "upper", "lower", "left" and "right" are defined relative to the schematic placement of the components in the drawings. It should be understood that these directional terms are Relative concepts, they are used for relative description and clarification, which can be changed correspondingly according to the changes in the orientation of the components in the drawings.

The embodiment of the application provides an electronic device, which can be a terminal device with a display interface such as a mobile phone, a TV, a monitor, a tablet computer, a car computer, etc., or a smart display wearable device such as a smart watch, a smart bracelet, or Communication equipment such as servers, storages, base stations, or smart cars, etc. The embodiments of the present application do not impose special restrictions on the specific form of the above-mentioned electronic device.

For convenience of description, the following embodiments take the electronic device as a mobile phone as an example for description.

As shown in FIG. 2, the electronic device 1 mainly includes a display module 2, a middle frame 3, a casing (also called a battery cover, a rear casing) 4 and a cover 5.

The display module 2 has a light-emitting side where the display screen can be seen and a back surface opposite to the above-mentioned light-emitting side.

The above-mentioned display module 2 includes a display panel (DP).

In a possible embodiment of the present application, the display module 2 is a liquid crystal display module. In this case, the above-mentioned display screen is a liquid crystal display (LCD). Based on this, the display module 2 also includes a backlight unit (BLU) located on the back of the liquid crystal display screen (a side away from the side of the LCD for displaying images).

The backlight module can provide a light source to the liquid crystal display, so that each sub-pixel in the liquid crystal display can emit light to realize image display.

Or, in another possible embodiment of the present application, the display module 2 is an organic light emitting diode display module. In this case, the above-mentioned display screen is an organic light emitting diode (OLED) display screen. Since each sub-pixel in the OLED display screen is provided with an electroluminescent layer, the OLED display screen can realize self-luminescence after receiving the working voltage. In this case, the above-mentioned backlight module does not need to be provided in the display module 2 with the OLED display screen.

The cover plate 5 is located on the side of the display module 2 away from the middle frame 3, and the cover plate 5 may be, for example, cover glass (CG), which may have a certain degree of toughness.

The middle frame 3 is located between the display module 2 and the housing 4, and the surface of the middle frame 3 away from the display module 2 is used to install internal components such as batteries, printed circuit boards (PCB), cameras, antennas, etc. . After the casing 4 and the middle frame 3 are closed, the above-mentioned internal elements are located between the casing 4 and the middle frame 3.

The above-mentioned electronic device 1 also includes electronic devices such as a motherboard, a system-on-chip (SOC), and a packaging structure arranged on a PCB board. The PCB board is used to carry the above-mentioned electronic devices and complete signal interaction with the above-mentioned electronic devices.

It should be noted that regardless of whether the electronic device 1 is any of the above-mentioned terminal devices, smart display wearable devices (such as AR or VR), communication equipment, car machines, smart cars, etc., the PCB board in the electronic device 1 is used for Carry the electronic device (such as a package structure), and complete signal interaction with the electronic device to provide a driving signal to the electronic device 1. FIG. 2 only takes the electronic device 1 as a mobile phone as an example, showing the location of the PCB board for carrying the electronic device, but it is not limited to the PCB board for carrying the electronic device only for the mobile phone.

The preparation cost of each component in the electronic device 1 is closely related to the cost of the electronic device 1. Based on this, the embodiment of the present application provides a packaging method that reduces the cost.

Example one

As shown in FIG. 4 a, the package structure includes a base 10, the base 10 includes a pad 12, and the pad 12 is disposed on the first surface A of the base 10.

As shown in FIG. 3, a packaging method of a packaging structure is provided, including:

S1: As shown in FIG. 4a, a wire bonding (WB) process is used to form a metal connecting pillar 20 on the surface of the pad 12, the side surface of the metal connecting pillar 20 is curved, and the metal connecting pillar 20 and the pad 12 For connection, the metal connection post 20 is used to transmit electrical signals in the pad 12 and/or the base 10.

Optionally, the metal connection post 20 functions as a wire and has electrical conductivity, that is, the electrical signal in the base 10 transmits the electrical signal to the components outside the package structure through the pad 10 and the metal connection post 10.

The wire bonding process is a process that uses thin metal wires and uses heat, pressure, and ultrasonic energy to make the metal leads and the substrate pad 12 tightly welded.

As shown in FIG. 4 a, the first surface A of the base 10 has a pad 12, and the metal connection pillar 20 formed in step S1 is disposed on the first surface A of the base 10 and on the surface of the pad 12. Therefore, the metal connecting pillar 20 and the pad 12 are in direct contact and electrically connected, and the signal in the pad 12 can be transmitted to the component connected to the other end of the metal connecting pillar 20.

The process of forming the metal connecting post 20 by using the wire bonding process is as follows: first, a metal wire is placed in a bonding tool (for example, a capillary capillary knife), and a free air ball is formed through the "electronic flame extinguishing" process of the ionized air gap. Then the bonding tool is moved to the position of the bonding pad 12, and a circular solder joint is formed on the surface of the bonding pad 12 through the combined action of heat and ultrasonic energy (thermosonic welding). Then, the bonding tool raises and cuts the circular solder joints to form the metal connection pillar 20. Therefore, it can be seen that when the metal connecting pillar 20 is formed on the bonding pad 12 by the wire bonding process, the side surface of the metal connecting pillar 20 is curved, and the shape of the side surface of the metal connecting pillar 20 is related to the wire bonding process, which is related to the related art When the hole-filling metal 13 is formed by an electroplating process, the shape of the hole-filling metal 13 is different from the shape of the hole.

For ease of description, as shown in FIG. 4a, in the embodiment of the present application, the side surface of the metal connecting column 20 is a spherical surface as an example for illustration. For example, the shape of the metal connecting column 20 is a drum; the side surface of the metal connecting column 20 may also be Other shapes such as ellipsoid surface and water drop surface are not limited in this application.

Regarding the contact area between the metal connecting pillar 20 and the pad 12, optionally, as shown in FIG. 4a, the contact area between the metal connecting pillar 20 and the pad 12 is smaller than the area of the pad 12. Or, optionally, as shown in FIG. 4 b, the contact area between the metal connecting pillar 20 and the pad 12 is equal to the area of the pad 12. Among them, the shape of the pad 12 is not limited in the embodiment of the present application, and the shape of the pad 12 may be a closed pattern of any shape. For example, the shape of the pad 12 is a regular pattern such as a circle, a rectangle, and a triangle.

It should be noted that the metal connection post 20 has the characteristic of electrical conduction (or understood as the function of conducting electrical signals or electrical conduction), and the metal connection post 20 conducts the signal of the base 10 through itself to the components connected to the package structure. The material of the metal connecting column 20 is not limited in this application, and it can be any metal material, alloy or metal mixture. The material of the metal connecting column 20 can be, for example, aluminum, tin, titanium, or alloys and mixtures of the foregoing metals.

In some embodiments, in order to reduce the cost of the metal connecting pillar 20, the material of the metal connecting pillar 20 may be, for example, copper (Cu) or a copper-containing metal mixture or a copper-containing alloy. In some other embodiments, in order to reduce the resistance of the metal connection post 20 and improve the ductility of the metal connection post 20, the material of the metal connection post 20 may be, for example, gold (Au), silver (Ag), and a metal mixture containing gold. , Silver-containing metal mixtures, gold-containing alloys or silver-containing alloys.

In the embodiment of the present application, the base 10 in the package structure may be, for example, a chip, a redistribution layer, a substrate, a PCB board, etc., or other substrates that perform the same or similar functions, which is not limited in the present application.

S2: As shown in FIG. 5a, a first insulating layer 30 is formed on the first surface of the base 10, the first insulating layer 30 has a first via 32, and the first via 32 penetrates the first insulating layer 30, partially or All the metal connecting pillars 20 are located in the first via hole 32.

After performing step S2, as shown in FIG. 5a, the first insulating layer 30 in the package structure covers the first surface (the surface with the pad 12) of the base 10, and the metal connecting pillars 20 are located on the first insulating layer 30. In the first via 32, the first insulating layer 30 surrounds the metal connection pillar 20 and exposes the end of the metal connection pillar 20. Since the side surface of the metal connecting pillar 20 is curved, the contour shape of the contact between the first insulating layer 30 and the metal connecting pillar 20 is determined by the shape of the metal connecting pillar 20, and it is also curved (for example, the concave surface in FIG. 5a).

Regarding the method of forming the first insulating layer 30, in a possible embodiment, the first insulating layer 30 may be formed by a patterning process. A patterning process usually includes one or more of the processes of film formation, photoresist coating, exposure, development, etching, photoresist stripping, etc. Therefore, as shown in FIG. A first insulating film layer 31 is formed on a surface; then, through a photolithography process (including one or more of photoresist coating, exposure, development, etching, and photoresist stripping processes), the first insulating film A first via 32 is formed on the layer 31, and the first via 32 exposes the metal connecting pillar 20 to form the first insulating layer 30. Regarding the method of forming the first insulating layer 30, in another possible embodiment, the first insulating layer 30 may be formed by a laser opening process. As shown in FIG. 5b, a first insulating film layer 31 may be formed on the first surface of the substrate 10; then a first via hole 32 is formed on the first insulating film layer 31 by laser opening. The metal connecting pillar 20 is exposed to form the first insulating layer 30.

Wherein, the first insulating film layer 31 may be formed on the base body 10 on which the metal connecting pillars 20 are formed through a lamination process. Alternatively, the first insulating film layer 31 may be formed on the base 10 on which the metal connecting pillars 20 are formed by a spin coating process.

In addition, since the first insulating film layer 31 is formed on the base 10 on which the metal connecting pillars 20 are formed, as shown in FIG. A first via 32 is formed on the first insulating film layer 31, and the metal connecting post 20 is located in the first via 32. The first via 32 exposes the end of the metal connecting post 20. The end of the metal connecting post 20 may be To connect to other components (such as a PCB board), since the material of the metal connection post 20 has the characteristics of electrical conduction, the metal connection post 20 can conduct the signal in the base 10 to other components connected to the end of the metal connection post 20 ( Such as PCB board). When the metal connecting post 20 is connected to other components (such as a PCB board), it can be connected directly, or through solder balls, or through other components with electrical conductivity. This application is not limited, and solder balls will be used later. 14 for illustration, see Figure 5e for details.

Here, the material constituting the first insulating layer 30 may be, for example, polyimide (PI), epoxy resin or the like. Optionally, the surface a3 of the first insulating layer 30 is parallel to the first surface A of the base 10.

Regarding the relationship between the thickness of the first insulating layer 30 and the metal connecting pillar 20, in some embodiments, as shown in FIG. Alignment, that is, the sum of the thickness of the pad 12 and the thickness of the metal connecting pillar 20 is equal to the thickness of the first insulating layer 30; in this case, all the metal connecting pillars 20 are disposed in the first via hole.

Since the surface a3 of the first insulating layer 30 away from the base 10 is flush with the surface a1 of the metal connecting post 20 away from the base 10, the process accuracy requirements are relatively high. Therefore, in some embodiments, as shown in FIG. 5a, the first insulating layer The surface a3 of the layer 30 away from the base 10 is not flush with the surface a1 of the metal connecting post 20 away from the base 10.

That is, as shown in FIG. 5a, the surface a3 of the first insulating layer 30 away from the base 10 is lower than the surface a1 of the metal connecting pillar 20 away from the base 10 (that is, the sum of the thickness of the pad 12 and the thickness of the metal connecting pillar 20, Greater than the thickness of the first insulating layer 30; in this case, part of the metal connecting pillars 20 are disposed in the first via 32), or, as shown in FIG. 5d, the first insulating layer 30 is far away from the surface a3 of the base 10 The surface a1 that is higher than the metal connection post 20 away from the base 10 (that is, the sum of the thickness of the pad 12 and the thickness of the metal connection post 20 is less than the thickness of the first insulating layer 30; in this case, all the metal connections The pillar 20 is disposed in the first via hole 32).

In some embodiments, the packaging method further includes S3: as shown in FIG. 5e, a solder ball 14 is formed at one end of the metal connection pillar 20; the solder ball 14 is disposed at the other end of the metal connection pillar 20 relative to the pad 12, and the solder ball 14 is connected to the metal connecting post 20 for transmitting the electrical signal of the base body 10.

It should be noted that the solder ball 14 in this application is not limited to a spherical shape. The solder ball 14 can be spherical or other irregular shapes. It can also be a pad or a solder joint. There is no restriction on this.

After performing step S3, as shown in FIG. 5e, the solder ball 14 is located on the surface of the metal connecting column 20 and is electrically connected to the metal connecting column 20, the pad 12 is located at one end of the metal connecting column 20, and the solder ball 14 is located opposite to the pad 12 The other end of the metal connection post 20 realizes the signal transmission between the solder ball 14 and the base 10, and completes the packaging of the base 10; at the same time, realizes that the electric signal in the base 10 is passed through the pad 12, the metal connection post 20 and the welding The ball 14 is conducted to the parts outside the package structure.

In the embodiment of the present application, the metal connecting pillar 20 is directly formed on the surface of the pad 12 by using a wire bonding process, and the metal connecting pillar 20 is connected to the pad 12 to realize the electrical signal in the substrate 10 through the pad 12, metal The connecting pillars 20 are conducted to components outside the package structure. Compared with the method of forming the via-filling metal 13 by the electroplating process, it is necessary to form a barrier layer and a seed layer on the surface of the pad 12 first, the metal connection formed by the packaging method provided in the embodiment of the present application is The pillar 20 ensures that the electrical signals in the base 10 are transmitted to the external components of the package structure, and at the same time, the process is simple and the cost is low.

In some embodiments, as shown in FIG. 6a, other functional components 17 are stacked and packaged on the substrate 10, and the functional components 17 may be, for example, storage units, processing units, resistors, capacitors, radio frequency units, and other components. The first insulating layer 30 covers the functional component 17.

When the packaging structure shown in FIG. 6a needs to be electrically connected to the PCB board (component outside the packaging structure) in the above electronic device 1 to complete signal transmission, in order to enable the base 10 to complete the signal transfer with the PCB, the base needs to be The signal of 10 leads.

In a possible embodiment, as shown in FIG. 6b, after the functional component 17 is encapsulated on the base 10, an electroplating process may be used to form a through molding via (TMV) on the pad 12 of the base 10. Then, a first insulating layer 30 is formed on the first surface of the base 10. The material of the first insulating layer 30 is a plastic encapsulating material, and the material of the first insulating layer 30 is, for example, epoxy molding compound (EMC). Solder balls 14 are formed thereon to form a package structure. Then the solder balls 14 in the package structure are soldered to the PCB board to complete the signal transmission between the base body 10 and the PCB board.

In a possible embodiment, as shown in FIG. 6c, after the functional component 17 is encapsulated on the base 10, the metal connecting post 20 and the solder ball 14 can be formed through the above steps S1-S3, and the metal connecting post 20 is equivalent to TMV , To form a package structure. Then the solder balls 14 in the package structure are connected to the PCB board to complete the signal transmission between the base 10 and the PCB board.

The packaging method provided by the embodiment of the present application uses a wire bonding process to form the metal connecting post 20 with a curved side surface. Compared with the electroplating process used to form the filling metal 13 or TMV, it is necessary to form a barrier on the surface of the pad 12 first. In the barrier layer and seed layer methods, the packaging method provided in the embodiment of the present application has a simple process for forming the metal connecting pillar 20 and lower cost. In addition, the metal connecting pillar 20 is in direct contact with the pad 12 without other film layers (such as a seed layer or a barrier layer) in between, which can reduce the risk of unstable connection between the metal connecting pillar 20 and the pad 12 due to film layer fracture.

In addition, as shown in FIG. 7, when the packaging method provided by the embodiment of the present application is used for packaging, before the packaging, the multiple pads 12 on the surface of the base body 10 exist independently, and there is no plating bridge 15 shown in FIG. 1b. . Therefore, the structure of the base body 10 is simple, thereby simplifying the structure of the packaging structure. Moreover, there is no need to cut off the plating bridge 15 after the packaging is completed, which can simplify the process flow.

Furthermore, if as shown in FIG. 1a, an electroplating process is used to form the via-filling metal 13 for packaging. As shown in FIG. Each of the pads 12 is connected, resulting in a short circuit state between the plurality of pads 12. Therefore, the base body 10 cannot be screened in advance. Only after the packaging is completed, the plating bridge 15 is etched to insulate the pads 12, before the packaging structure is a good product can be screened, resulting in waste of the packaging process for the waste sheet. . When the packaging method provided by the embodiment of the present application is used for packaging, the pads 12 on the surface of the base body 10 exist independently before the packaging. Therefore, before the substrate 10 is packaged, the substrate 10 can be directly screened for good products (such as leakage current detection), and the waste substrate 10 can be directly eliminated, thereby avoiding process waste and improving output.

Example two

Take the packaging structure as a wafer level packaging surface acoustic wave (WLPSAW) filter as an example for illustration.

As shown in Figure 8, the packaging method of WLPSAW filter includes:

S11. As shown in FIG. 9, a metal connecting pillar 20 is formed on the surface of the pad 12, the side of the metal connecting pillar 20 is curved, and the metal connecting pillar 20 is connected to the pad 12, and the metal connecting pillar 20 is used in the transmission substrate 10. Electrical signal. Wherein, the pad 12 is provided on the first surface A of the base 10.

Optionally, a wire bonding process is used to form a metal connection pillar 20 on the surface of the bonding pad 12.

Optionally, as shown in FIG. 9, in the packaging structure of the WLPSAW filter, the base 10 is a chip, and the first surface A of the base 10 is also provided with an interdigital transducer 16. The side surface of the metal connecting pillar 20 formed by the wire bonding process is curved, and the metal connecting pillar 20 is located on the surface of the pad 12 and is electrically connected to the pad 12.

The so-called interdigital transducer 16 is formed on the surface of the substrate 10 with a metal pattern shaped like the fingers of two hands, and its function is to realize acoustic-electric transduction.

S12. As shown in FIGS. 10a and 10c, a first insulating layer 30 is formed on the first surface of the base body 10. The first insulating layer 30 has a first via 32 and a second via 33, and the first via 32 and the second Both via holes 33 penetrate the first insulating layer 30. FIG. 10a is a schematic structural diagram of a first insulating layer provided by an embodiment of the present application. Wherein, the metal connecting post 20 is disposed in the first via hole 32, and the interdigital transducer 16 is disposed in the second via hole 33.

Optionally, referring to FIG. 10c, in the process of forming the first insulating layer 30, a first via 32 and a second via 33 are formed on the first insulating layer 30. Wherein, the first via 32 penetrates the first insulating layer 30. The first via hole 32 is used for accommodating the pad 12 and the metal connecting pillar 20, that is, the first via hole 32 is a space on the first insulating layer 30 for accommodating the pad 12 and the metal connecting pillar 20. As shown in FIG. 10c, the second via 33 penetrates the first insulating layer 30. The second via hole 33 is used for accommodating the interdigital transducer 16, that is, on the first insulating layer 30, the second via hole 33 is a space for accommodating the interdigital transducer 16. Wherein, the first via 32 and the second via 33 may be formed in the same patterning process, or may be formed separately.

After performing step S12, as shown in FIG. 10a, the first insulating layer 30 covers the first surface of the base 10, the first insulating layer 30 exposes the metal connecting pillars 20 and the interdigital transducer 16, and the metal connecting pillars 20 and the second The side surface contacted by an insulating layer 30 is a curved surface. At this time, the first insulating layer 30 is equivalent to a wall serving as a protective cavity for placing the interdigital transducer 16, and no other components are provided on the surface of the interdigital transducer 16 (as shown in FIG. 10a).

Here, the material constituting the first insulating layer 30 may be, for example, polyimide (PI), epoxy resin or the like.

Regarding the method of forming the first insulating layer 30, in a possible embodiment, the first insulating layer 30 may be formed by a patterning process.

Optionally, as shown in FIG. 10b, a first insulating film layer 31 may be formed on the first surface of the base 10 through a lamination process; then, through a photolithography process (including photoresist coating, exposure, development, One or more of the etching and photoresist stripping process), the first via hole and the second via hole 33 are formed on the first insulating film layer 31 to form the first insulating layer 30.

Optionally, as shown in FIG. 10d, a first insulating film layer 31 may be formed on the first surface of the substrate 10 through a spin coating process, and the first insulating film layer 31 exposes the metal connecting pillars 20; In the engraving process, a second via hole 33 is formed on the first insulating film layer 31, and the second via hole 33 exposes the interdigital transducer 16 to form the first insulating layer 30.

Optionally, the thickness of the first insulating layer 30 is less than or equal to 30 microns. Optionally, the thickness of the metal connecting pillar 20 is less than or equal to 50 microns. Optionally, the thickness difference between the metal connecting pillar 20 and the first insulating layer is less than or equal to 50, further, the thickness difference is less than or equal to 40, and further, the thickness difference is less than or equal to 30.

The first insulating film layer 31 formed by the spin coating process can directly expose the metal connecting pillars 20, and the formed first insulating film layer 31 directly has the first via 31, which is equivalent to eliminating the need for a photolithography process or laser The step of forming the first via hole 32 on the first insulating film layer 31 by the hole-opening process can save materials when forming the first insulating layer 30 and simplify the process difficulty.

Regarding the method of forming the first insulating layer 30, in another possible embodiment, the first insulating layer 30 may be formed by a laser opening process. For example, the first insulating film 31 is first formed by the above-mentioned lamination process or the spin coating process, and then the first via 32 and the second via 33 are formed by the laser opening process, which will not be repeated here.

S13. As shown in FIGS. 11a and 11b, a second insulating layer 40 is formed on the side of the first insulating layer 30 away from the base 10, the second insulating layer 40 has a third via 42, and the third via 42 penetrates through the second insulating layer. The insulating layer 40 is connected to the first via hole; a part of the metal connecting pillar 20 is disposed in the first via hole, and another part of the metal connecting pillar 20 is disposed in the third via hole 42.

For the explanation of the first via hole and the second via hole, refer to the foregoing embodiment, which will not be repeated here.

Optionally, in the process of forming the second insulating layer 40, a third via 42 is formed on the second insulating layer 40. Wherein, referring to FIG. 11b, the third via hole 42 is formed through the second insulating layer 40, and the third via hole 42 is used to accommodate the metal connecting pillar 20, that is, the third via hole 42 is the second insulating layer 40. The upper space is used for accommodating the metal connecting column 20. Wherein, the third via hole 42 and the first via hole may be formed in the same patterning process, or may be formed separately.

After performing step S13, as shown in FIG. 11a, the second insulating layer 40 covers the first insulating layer 30, the metal connecting pillars 20 penetrate the first insulating layer 30 and the second insulating layer 40, and the metal connecting pillars 20 are arranged in the first insulating layer. The hole 32 and the third via hole 33 form a communicating hole, and the second insulating layer 40 exposes the end of the metal connecting pillar 20. Since the shape of the metal connecting column 20 has been fixed (the side surface is a curved surface), the side surface of the metal connecting column 20 in contact with the second insulating layer 40 is a curved surface.

A protective cavity Q is formed between the second insulating layer 40, the first insulating layer 30 and the base 10, and the interdigital transducer 16 is located in the protective cavity Q. At this time, the second insulating layer 40 is equivalent to the roof of the protective cavity Q for placing the interdigital transducer 16, and the second insulating layer 40 is not in contact with the surface of the interdigital transducer 16.

Regarding the method of forming the second insulating layer 40, in a possible embodiment, as shown in FIG. A protection cavity Q is formed between the second insulating film layer 41, the second via 33 on the first insulating layer 30 and the base 10. Then, a patterning process or a laser opening process is used to form a third via hole 42 on the second insulating film layer 41, and the third via hole 42 exposes the metal connecting pillar 20 to form the second insulating layer 40.

Among them, in the first direction X (the first direction X is a direction perpendicular to the base 10, or understood as the direction in which the base 10, the first insulating layer 30, and the second insulating layer 40 are stacked in sequence), the metal connecting pillars 20 and The size (thickness) relationship between the first insulating layer 30 and the second insulating layer 40. In some embodiments, as shown in FIG. The surface a2 is flush. That is, in the first direction X, the sum of the thickness of the pad 12 and the thickness of the metal connecting pillar 20 is equal to the sum of the thickness of the first insulating layer 30 and the thickness of the second insulating layer 40. In this way, when solder balls are subsequently prepared on the surface of the metal connecting pillars 20, even if the solder balls and the metal connecting pillars 20 are slightly offset, the connection effect between the solder balls and the metal connecting pillars 20 will not be affected, thereby reducing the need for solder balls. Requirement of bit accuracy.

In some embodiments, when the surface a1 of the metal connecting pillar 20 away from the base 10 is flush with the surface a2 of the second insulating layer 40 away from the base 10, the process requirements for forming the metal connecting pillar 20 are relatively high. The post 20, the first insulating layer 30 and the second insulating layer 40 require process accuracy to reduce the process difficulty. As shown in FIG. The surface a2 of the base 10, that is, in the first direction X, the sum of the thickness of the pad 12 and the thickness of the metal connecting pillar 20 is greater than the sum of the thickness of the first insulating layer 30 and the thickness of the second insulating layer 40.

In some embodiments, when the surface a1 of the metal connecting pillar 20 away from the base 10 is flush with the surface a2 of the second insulating layer 40 away from the base 10, the process requirements for forming the metal connecting pillar 20 are relatively high. The post 20, the first insulating layer 30 and the second insulating layer 40 require process accuracy to reduce the process difficulty. As shown in FIG. The surface a2 of the base 10, that is, in the first direction X, the sum of the thickness of the pad 12 and the thickness of the metal connecting pillar 20 is smaller than the sum of the thickness of the first insulating layer 30 and the thickness of the second insulating layer 40.

Considering that the thickness of the metal connecting pillar 20 along the first direction X is too small, when the first insulating layer 30 exposes the metal connecting pillar 20, the processing process is complicated. In addition, when the second insulating layer 30 covers the metal connecting pillars 20 thickly, the second insulating layer 30 will expose the metal connecting pillars 20, and the processing time will be longer. However, the thickness of the metal connecting pillar 20 along the first direction X is too large, and when the second insulating layer 40 exposes the metal connecting pillar 20, the processing process is complicated. As shown in FIG. 11a, in a possible embodiment, the thickness of the metal connecting pillar 20 along the first direction X is h1, the thickness of the first insulating layer 30 along the first direction X is h2, and the second insulating layer The thickness of 40 along the first direction X is h3, the thickness h1 of the metal connecting pillar 20 along the first direction X ranges from the value range of the thickness h2 of the first insulating layer 30 along the first direction X to the second insulating layer 40. Within the range of plus or minus 5 μm for the sum of the thickness h3 along the first direction X, h1=((h2+h3)-5μm)～((h2+h3)+5μm), that is, the metal connecting post 20 is along the first The thickness h1 in the direction X ranges between ((h2+h3)-5μm) and ((h2+h3)+5μm), that is, the minimum value of h1 is (h2+h3)-5μm, The maximum value is (h2+h3)+5μm.

The WLPSAW filter provided in FIG. 11a to FIG. 11d is illustrated by using the second insulating layer 40 as a single-layer film, which has fewer process steps, simple structure, and high preparation efficiency.

It should be noted that the thickness h3 of the second insulating layer 40 along the first direction X can be about 10-40 μm. As shown in FIG. The first sub-insulating layer 43 and the first sub-insulating layer 43 expose the metal connecting pillars 20. If the thickness h4 of the first sub-insulating layer 43 in the first direction X is too small due to the limitation of the lamination process or due to other factors, the thickness h1 of the metal connecting pillar 20 in the first direction X is not in the range of (h2 Within +h4)-5～(h2+h4)+5 μm, at least one second sub-insulating layer 44 may be formed on the side of the first sub-insulating layer 43 away from the first insulating layer 30.

In some embodiments, as shown in FIG. 11e, at least one second sub-insulating layer 44 may be formed on the side of the first sub-insulating layer 43 away from the first insulating layer 30, the first sub-insulating layer 43 and at least one layer The second sub-insulating layer 44 serves as the second insulating layer 40, and the sum of the thicknesses of the first sub-insulating layer 43 and at least one layer of the second sub-insulating layer 44 along the first direction X serves as the second insulating layer 40 along the first direction. The thickness on X is h3. Of course, the thicknesses of the first sub-insulating layer 43 and the second sub-insulating layer 44 in the first direction X may be equal, or both may be different, and some may be equal or some may be unequal, which is not limited in this application.

Here, by adding the second sub-insulating layer 44, the thickness of the finally formed second insulating layer 40 can meet the requirements, and the requirements for the thickness of each layer of the first sub-insulating layer 43 and the second sub-insulating layer 44 can be reduced. Reduce the application difficulty of the process.

In one embodiment, in order to form the accommodating cavity Q between the first sub-insulating layer 43 and the first insulating layer 30, the first sub-insulating film layer can be formed by a lamination process, and a lamination process or spin coating can be used. The second sub-insulating film layer is formed by a film process; then, a photolithography process or a laser opening process is used to form a third via hole 42 penetrating the first sub-insulating film layer and the second sub-insulating film layer to form the first sub-insulating layer and The second sub-insulating layer; wherein the second insulating layer 40 includes a first sub-insulating layer 43 and a second sub-insulating layer 44.

Optionally, the second insulating layer 40 further includes a third sub-insulating layer, a fourth sub-insulating layer, ... the Nth sub-insulating layer, where N is a positive integer. Similarly, the third sub-insulating layer, the fourth sub-insulating layer, ... the Nth sub-insulating layer are formed using the same method as described above.

In an embodiment, in order to form the accommodating cavity Q between the first sub-insulating layer 43 and the first insulating layer 30, the first sub-insulating thin film layer can be formed by a lamination process, and then a photolithography process or laser opening can be used. The hole process forms part of the third via hole 42 penetrating the first sub-insulating film layer to form the first sub-insulating layer 43; the second sub-insulating film layer can be formed by a lamination process or a spin coating process, and then a photolithography process is used Or the laser drilling process forms another part of the third via 42 penetrating the second sub-insulating film layer to form the second sub-insulating layer 44; wherein the second insulating layer 40 includes the first sub-insulating layer 43 and the second sub-insulating layer 44 .

Optionally, the second insulating layer 40 further includes a third sub-insulating layer, a fourth sub-insulating layer,... An Nth sub-insulating layer, where N is a positive integer. Similarly, the third sub-insulating layer, the fourth sub-insulating layer, ... the Nth sub-insulating layer are formed using the same method as described above.

Wherein, the first sub-insulating layer 43, the first insulating layer 30 and the base 10 constitute the protection cavity Q.

Using a lamination process to form the first sub-insulating film layer closest to the first insulating layer 30 can ensure that the second via 33 on the first insulating layer 30 is not filled up in a relatively simple manner to form a receiving cavity Q. It should be understood that the first sub-insulating layer 43, the second sub-insulating layer 44, ... the Nth sub-insulating layer are only a name for explaining the structure of the package structure, that is, the first insulating layer 30 is far away Multiple insulating layers can be provided on one side of the base 10. The first sub-insulating layer 43 and the second sub-insulating layer 44 can also be referred to as the second insulating layer and the third insulating layer. The third insulating layer has a fourth via, the fourth via penetrates the third insulating layer, and the fourth via The hole communicates with the third via hole; part of the metal connecting pillar 20 is disposed in the fourth via hole. The formation method of the third insulating layer may be the same as the formation method of the second insulating layer 40, which will not be repeated here.

It should be noted that after the packaging structure is formed in step S13, optionally, step S14 may be performed. Step S14 is not essential and can be replaced with other steps.

S14. As shown in FIG. 12, a solder ball 14 is formed at one end of the metal connection post 20; the solder ball 14 is disposed at the other end of the metal connection post 20 relative to the pad 12, and the solder ball 14 is connected to the metal connection post 20 for The electrical signal of the base 10 is transmitted.

After performing step S14, as shown in FIG. 12, the solder ball 14 is located on the surface of the metal connection pillar 20 and is electrically connected to the metal connection pillar 20, the pad 12 is located at one end of the metal connection pillar 20, and the solder ball 14 is opposite to the pad 12 Located at the other end of the metal connecting pillar 20, components outside the package structure are connected to the metal connecting pillar 40 through solder balls 14. While the packaging of the base 10 is completed, it is realized that the electrical signals in the base 10 are transmitted to the external components of the packaging structure through the pad 12, the metal connecting pillar 20 and the solder ball 14.

WLPSAW filters are generally used in system-in-a-package (SIP) modules of the RF front-end. When the substrate 10 is packaged in related technologies, as shown in Figure 13a, a patterning process is required. A wall 51 and a roof 52 are formed on the first surface. The wall 51 and the roof 52 form a protective cavity Q for accommodating the interdigital transducer 16 and expose the pad 12. Then, an electroplating process is used to form a metal connector 53 electrically connected to the pad 12 to realize signal transmission between the base 10 and the solder balls 14. According to needs, the dimensions of the surrounding wall layer 51 and the roof layer 52 along the first direction X are both about 10-40 um. As a result, after the surrounding wall layer 51 and the roof layer 52 expose the pad 12, deep hole electroplating is required, which increases the difficulty of electroplating and increases the processing cost.

In this embodiment, a wire bonding process is first used to form the metal connecting pillar 20, and then the first insulating layer 30 and the second insulating layer 40 are formed. In this way, not only is the process cost of forming the metal connecting pillar 20 lower than that of forming the metal connecting member 53, but also when forming the first insulating film 31 and the second insulating film 41, the first insulating film covering the metal connecting pillar 20 is The thin film 31 and the second insulating film 41 are relatively thin, and etching them to expose the metal connecting pillars 20 can increase the processing speed.

In addition, the embodiment of the present application adopts a wire bonding process to form the metal connecting post 20 with a curved side surface. Compared with the electroplating process used in the related art to form the filling metal 13, it is necessary to form a barrier layer and a barrier layer on the surface of the pad 12 first. In the seed layer method, the packaging method provided by the embodiment of the present application has a simple process for forming the metal connecting pillar 20 and lower cost. In addition, the metal connecting pillar 20 is in direct contact with the pad 12 without other film layers in between, which can reduce the risk of unstable connection between the metal connecting pillar 20 and the pad 12 due to film fracture.

In addition, as shown in FIG. 13b, when the packaging method provided by the embodiment of the present application is used for packaging, before the packaging, the multiple pads 12 on the surface of the base body 10 exist independently, and there is no electroplating bridge 15 shown in FIG. 1b. . Therefore, the structure of the base body 10 is simple, thereby simplifying the structure of the packaging structure. Moreover, there is no need to cut off the plating bridge 15 after the packaging is completed, which can simplify the process flow.

Furthermore, if as shown in FIG. 1a, an electroplating process is used to form the via-filling metal 13 for packaging. As shown in FIG. Each of the pads 12 is connected, resulting in a short circuit state between the plurality of pads 12. Therefore, good product screening cannot be performed on the substrate 10 in advance. Only after the packaging is completed, the electroplating bridge 15 is etched to insulate the pads 12, and then the good product screening can be performed, resulting in waste of the packaging process for the waste chips. When the packaging method provided by the embodiment of the present application is used for packaging, since before the packaging, as shown in FIG. 13b, the pads 12 on the surface of the substrate 10 exist independently. Therefore, before the substrate 10 is packaged, the substrate 10 can be directly screened for good products, and the waste substrate 10 can be directly eliminated, which can avoid process waste and increase the output.

Example three

The third embodiment also illustrates the packaging method of the WLPSAW filter, but the difference between the third embodiment and the second embodiment is that the packaging steps are different. The first insulating layer 30 is formed first, then the metal connecting pillar 20 is formed, and then the second insulating layer is formed.层40.

As shown in Figure 14, the packaging method of WLPSAW filter includes:

S21: As shown in FIG. 15a, a first insulating layer 30 is formed on the first surface of the substrate 10. The first insulating layer 30 has a first via 32 and a second via 33, and a first via 32 and a second via The holes 33 all penetrate the first insulating layer 30.

The base 10 includes a pad 12 and an interdigital transducer 16, and both the pad 12 and the interdigital transducer 16 are disposed on the first surface A of the base 10.

After performing step S21, as shown in FIG. 15a, the first insulating layer 30 covers the first surface of the base 10, and both the first via 32 and the second via 33 penetrate the first insulating layer 30. When the metal connecting pillar 20 to be formed is in contact with the entire pad 12, as shown in FIG. 15a, the pad 12 is disposed in the first via 32, and the first via 32 exposes the entire pad 12. In the case where the metal connection pillar 20 to be formed is in contact with part of the pad 12, as shown in FIG. 15b, the first via 32 exposes the pad 12, but the first via 32 only exposes a part of the pad 12. The interdigital transducer 16 is disposed in the second via hole 33 and the second via hole 33 exposes the interdigital transducer 16.

Among them, the shapes of the first via 32 and the second via 33 are merely illustrative, and are not limited in any way. For example, the first insulating layer 30 may be formed by a patterning process or a laser opening process.

S22: As shown in FIG. 15c, a wire bonding process is used to form a metal connecting pillar 20 on the surface of the pad 12, the side of the metal connecting pillar 20 is curved, and the metal connecting pillar 20 is connected to the pad 12, and the metal connecting pillar 20 It is used to transmit the electrical signal of the base 10.

The first insulating layer 30 formed in step S21 exposes the pad 12. Therefore, after step S22 is performed, the metal connecting pillar 20 is located in the first via 32 of the first insulating layer 30, and the first insulating layer 30 still exposes the metal. Connect the column 20. Based on this, after performing step S22, as shown in FIG. 15c, the metal connecting pillar 20 is located on the surface of the pad 12 and is electrically connected to the pad 12, the first insulating layer 20 covers the first surface of the base 10, and the first The insulating layer 30 exposes the metal connection pillar 20.

It should be noted that the side surface of the metal connecting pillar 20 formed by the wire bonding process is curved (for example, a spherical surface), because when the metal connecting pillar 20 is formed, the molten metal is dropped onto the surface of the pad 12, Then cool quickly. However, the fluidity of the metal in the molten state is relatively small. Therefore, the shape of the metal connecting pillar 20 after cooling is affected by the wire bonding process, and is not affected by the shape of the first via 32.

Based on this, in a possible implementation, in order to reduce the possibility of water and oxygen entering from the gap between the side surface of the metal connecting pillar 20 and the hole wall of the first via 32, the pad 12 is corroded. As shown in FIG. 15c, the side surface of the metal connecting pillar 20 is in contact with the hole wall of the first via hole 32. It can be understood that, in this case, the metal connecting pillar 20 and the first via 32 may be completely attached to each other, or may be partly in contact with each other, depending on the shape of the first via 32.

In another possible embodiment, in order to reduce the requirements on the process accuracy of the size of the metal connecting column 20, it is avoided that the metal connecting column 20 cannot be placed in the first via 32 due to a slight size error. As shown in FIG. 15d, there is a gap between the side surface of the metal connecting column 20 and the hole wall of the first via hole 32.

S23: As shown in FIG. 15e, a second insulating layer 40 is formed on the side of the first insulating layer 30 away from the base 10, the second insulating layer 40 has a third via 42, and the third via 42 penetrates the second insulating layer 40 And it communicates with the first via hole 32; a part of the metal connecting column 20 is disposed in the first via hole, and a part is disposed in the third via hole 42. After performing step S23, as shown in FIG. 15e, the second insulating layer 40 covers the first insulating layer 30, the metal connecting post 20 is disposed in the communicating hole formed by the first via 32 and the third via 42, and the second insulating The layer 40 exposes the metal connecting pillar 20, a protective cavity Q is formed between the second insulating layer 40, the first insulating layer 30 and the base 10, and the interdigital transducer 16 is located in the protective cavity Q. Here, since the metal connecting pillar 20 is formed first, then the second insulating layer 40 is formed. Therefore, the shape of the side surface of the metal connecting pillar 20 in contact with the second insulating layer 40 is determined by the shape of the metal connecting pillar 20.

The method of forming the second insulating layer 40 can be the same as the method of forming the second insulating layer 40 in the second embodiment. As shown in FIG. 15e, for example, the second insulating film 41 is formed by a lamination process, and then the third via 42 is formed by a photolithography process or a laser opening process to form the second insulating layer 40. At this time, when the second insulating film 41 is formed by the lamination process, since the insulating film is away from the first insulating layer 30, there is a carrier film with greater hardness. Therefore, when the insulating film is laminated to the surface of the first insulating layer 30, The gap between the metal connecting pillar 20 and the first via hole 32 will not be filled, and the second via hole 33 will not be filled, and the finally formed second insulating layer 40 is as shown in FIG. 15e. It should be noted that the third via 42 in this embodiment is the same as the third via 43 in the second embodiment, and will not be repeated here.

Wherein, regarding the size relationship between the metal connecting pillar 20 and the first insulating layer 30 and the second insulating layer 40 along the first direction X, in some embodiments, as shown in FIG. 15f, the metal connecting pillar 20 is far away from the base 10 The surface a1 is flush with the surface a2 of the second insulating layer 40 away from the base 10, that is, along the first direction X, the sum of the thickness of the pad 12 and the thickness of the metal connecting pillar 20 is equal to the sum of the thickness of the first insulating layer 30 The total thickness of the second insulating layer 40. In some embodiments, as shown in FIG. 15g, the surface a1 of the metal connecting pillar 20 away from the base 10 is higher than the surface a2 of the second insulating layer 40 away from the base 10, that is, along the first direction X, the thickness of the pad 12 The sum of the thickness of the metal connecting pillar 20 and the thickness of the metal connecting pillar 20 is greater than the sum of the thickness of the first insulating layer 30 and the thickness of the second insulating layer 40.

In some embodiments, as shown in FIG. 15e, the surface a1 of the metal connecting pillar 20 away from the base 10 is lower than the surface a2 of the second insulating layer 40 away from the base 10, that is, along the first direction X, the thickness of the pad 12 The sum of the thickness of the metal connecting pillar 20 and the thickness of the metal connecting pillar 20 is smaller than the sum of the thickness of the first insulating layer 30 and the thickness of the second insulating layer 40.

For example, in a possible embodiment, as shown in FIG. 15e, the thickness of the metal connecting pillar 20 along the first direction X is h1, the thickness of the first insulating layer 30 along the first direction X is h2, and the thickness of the second insulating layer 30 along the first direction X is h2. The thickness of the insulating layer 40 along the first direction X is h3, and the thickness h1 of the metal connecting pillar 20 along the first direction X ranges from ((h2+h3)-5μm) and ((h2+h3)+5μm ), that is, the minimum value of h1 is (h2+h3)-5μm, and the maximum value is (h2+h3)+5μm.

Optionally, similar to step S14, after step S23 is completed, step S24 may be performed, or this step may not be performed, and the completed packaged structure is directly connected to external components.

S24. As shown in FIG. 15h, a solder ball 14 is formed at one end of the metal connection post 20; the solder ball 14 is disposed at the other end of the metal connection post 20 relative to the pad 12, and the solder ball 14 is connected to the metal connection post 20 for The electrical signal of the base 10 is transmitted.

After performing step S24, as shown in FIG. 15h, the solder ball 14 is located on the surface of the metal connection pillar 20 and is electrically connected to the metal connection pillar 20, the pad 12 is located at one end of the metal connection pillar 20, and the solder ball 14 is opposite to the pad 12 Located at the other end of the metal connecting pillar 20, the external components of the package structure are connected to the metal connecting pillar 20 through solder balls 14. While the packaging of the base 10 is completed, it is realized that the electrical signals in the base 10 are transmitted to the external components of the packaging structure through the pad 12, the metal connecting pillar 20 and the solder ball 14.

It should be noted that other components that are not specifically described are the same as those in the second embodiment, and will not be repeated here.

In this embodiment, a wire bonding process is used to form the metal connecting post 20 with a curved side surface. Compared with the electroplating process used in the related art to form the filling metal 13, a barrier layer and a seed layer need to be formed on the surface of the pad 12 first. According to the method, the packaging method provided by the embodiment of the present application has a simple process for forming the metal connecting pillar 20 and lower cost. In addition, the metal connecting pillar 20 is in direct contact with the pad 12 without other film layers in between, which can reduce the risk of unstable connection between the metal connecting pillar 20 and the pad 12 due to film fracture.

Moreover, when the second insulating film 41 is formed, the second insulating film 41 covering the metal connecting pillar 20 is relatively thin, and the etching speed to expose the metal connecting pillar 20 can increase the processing speed.

In addition, when the packaging method provided by the embodiment of the present application is used for packaging, the multiple pads 12 on the surface of the base body 10 exist independently before the packaging, and there is no electroplating bridge 15 shown in FIG. 1b. Therefore, the structure of the base body 10 is simple, thereby simplifying the structure of the packaging structure. Moreover, there is no need to cut off the plating bridge 15 after the packaging is completed, which can simplify the process flow.

Furthermore, if as shown in FIG. 1a, an electroplating process is used to form the via-filling metal 13 for packaging. As shown in FIG. Each of the pads 12 is connected, resulting in a short circuit state between the plurality of pads 12. Therefore, good product screening cannot be performed on the substrate 10 in advance. Only after the packaging is completed, the plating bridge 15 is etched to insulate the pads 12, and then the good product screening can be performed, which results in waste of the packaging process for the waste chips. When the packaging method provided by the embodiment of the present application is used for packaging, since before the packaging, as shown in FIG. 13b, the pads 12 on the surface of the substrate 10 exist independently. Therefore, before the substrate 10 is packaged, the substrate 10 can be directly screened for good products, and the waste substrate 10 can be directly eliminated, which can avoid process waste and increase the output.

Example four

The fourth embodiment also illustrates the packaging method of the WLPSAW filter, but the difference between the fourth embodiment and the second embodiment is that the packaging steps are different. The first insulating layer 30 is formed first, then the second insulating layer 40 is formed, and then the metal connection is formed.柱20。 Post 20. As shown in Figure 16, the packaging method of the WLPSAW filter includes:

S31: As shown in FIG. 15a, a first insulating layer 30 is formed on the first surface of the substrate 10. The first insulating layer 30 has a first via 32 and a second via 33, and the first via 32 and a second via The holes 33 all penetrate the first insulating layer 30.

After performing step S31, as shown in FIG. 15a, the first insulating layer 30 covers the first surface of the base 10, and both the first via 32 and the second via 33 penetrate the first insulating layer 30. When the metal connecting pillar 20 to be formed is in contact with the entire pad 12, as shown in FIG. 15a, the pad 12 is disposed in the first via 32, and the first via 32 exposes the entire pad 12. In the case where the metal connection pillar 20 to be formed is in contact with part of the pad 12, as shown in FIG. 15b, the first via 32 exposes the pad 12, but the first via 32 only exposes a part of the pad 12. The interdigital transducer 16 is disposed in the second via hole 33, and the second via hole 33 exposes the interdigital transducer 16.

For example, the first insulating layer 30 may be formed through a patterning process or a laser opening process. Among them, the shapes of the first via 32 and the second via 33 are merely illustrative, and are not limited in any way.

S32: As shown in FIG. 17a, a second insulating layer 40 is formed on the side of the first insulating layer 30 away from the base 10, the second insulating layer 40 has a third via 42, and the third via 42 penetrates the second insulating layer 40 And it communicates with the first via hole 32.

Wherein, a protective cavity Q is formed between the second insulating layer 40, the first insulating layer 30 and the base 10, and the interdigital transducer 16 is located in the protective cavity Q.

S33: As shown in FIG. 17b, a wire bonding process is used to form a metal connection post 20 on the surface of the pad 12, the side of the metal connection post 20 is curved, and the metal connection post 20 is connected to the pad 12, and the metal connection post 20 It is used to transmit the electrical signal of the base 10.

In this case, a part of the metal connecting post 20 is disposed in the first via 32, a part is disposed in the third via 42, and the metal connecting post 20 is disposed in the first via 32 and the third via 42. In the communicating hole.

It should be noted that the side surface of the metal connecting pillar 20 formed by the wire bonding process is curved (for example, a spherical surface), because when the metal connecting pillar 20 is formed, the molten metal is dropped onto the surface of the pad 12, Then cool quickly. The fluidity of the metal in the molten state is relatively small. Therefore, the shape of the cooled metal connecting pillar 20 is affected by the wire bonding process, and is not affected by the shape of the first via 32 and the third via 42.

Based on this, in a possible implementation, in order to reduce the possibility of water and oxygen entering from the gap between the side surface of the metal connecting pillar 20 and the hole wall of the first via 32, the pad 12 is corroded. As shown in FIG. 17b, the side surface of the metal connecting post 20 is in contact with at least one of the hole wall of the first via 32 and the hole wall of the second via 42.

In another possible embodiment, in order to reduce the requirements on the process accuracy of the size of the metal connecting column 20, it is avoided that the metal connecting column 20 cannot be placed in the first via 32 and the second via 42 due to a slight size error. middle. As shown in FIG. 17c, there is a gap between the side surface of the metal connecting column 20 and the hole wall of the first via hole 32 and the hole wall of the second via hole 42. Here, although there is a gap between the side surface of the metal connecting column 20 and the wall of the first via 32 and the wall of the second via 42, when other packaging steps are subsequently performed, further packaging will be performed without affecting Product performance.

Wherein, regarding the dimensional relationship between the metal connecting pillar 20 and the first insulating layer 30 and the second insulating layer 40 along the first direction X, in some embodiments, as shown in FIG. 17d, the metal connecting pillar 20 is far away from the base 10 The surface a1 is flush with the surface a2 of the second insulating layer 40 away from the base 10, that is, along the first direction X, the sum of the thickness of the pad 12 and the thickness of the metal connecting pillar 20 is equal to the sum of the thickness of the first insulating layer 30 The total thickness of the second insulating layer 40.

In some embodiments, as shown in FIG. 17e, the surface a1 of the metal connecting pillar 20 away from the base 10 is higher than the surface a2 of the second insulating layer 40 away from the base 10, that is, along the first direction X, the thickness of the pad 12 The sum of the thickness of the metal connecting pillar 20 and the thickness of the metal connecting pillar 20 is greater than the sum of the thickness of the first insulating layer 30 and the thickness of the second insulating layer 40.

In some embodiments, in order to be able to form the second insulating film layer 42 with a flat surface, so as to facilitate the formation of the third via hole 42. As shown in FIG. 17c, the surface a1 of the metal connecting pillar 20 away from the base 10 is lower than the surface a2 of the second insulating layer 40 away from the base 10, that is, along the first direction X, the thickness of the pad 12 and the thickness of the metal connecting pillar 20 The sum of the thicknesses is smaller than the sum of the thickness of the first insulating layer 30 and the thickness of the second insulating layer 40.

For example, in a possible embodiment, as shown in FIG. 17c, the thickness of the metal connecting pillar 20 along the first direction X is h1, the thickness of the first insulating layer 30 along the first direction X is h2, and the thickness of the second insulating layer 30 along the first direction X is h2. The thickness of the insulating layer 40 along the first direction X is h3, and the thickness h1 of the metal connecting pillar 20 along the first direction X ranges between (h2+h3)-5μm and (h2+h3)+5μm, That is, the minimum value of h1 is (h2+h3)-5μm, and the maximum value is (h2+h3)+5μm.

Optionally, similar to step S14, after step S33 is completed, step S34 may be performed, or this step may not be performed, and the completed packaged structure is directly connected to external components.

S34. As shown in FIG. 17f, a solder ball 14 is formed at one end of the metal connection post 20; the solder ball 14 is disposed at the other end of the metal connection post 20 relative to the pad 12, and the solder ball 14 is connected to the metal connection post 20 for The electrical signal of the base 10 is transmitted.

After performing step S34, as shown in FIG. 17f, the solder ball 14 is located on the surface of the metal connecting pillar 20 and is electrically connected to the metal connecting pillar 20, the pad 12 is located at one end of the metal connecting pillar 20, and the solder ball 14 is opposite to the pad 12 Located at the other end of the metal connecting pillar 20, the external components of the package structure are connected to the metal connecting pillar 20 through solder balls 14. While the packaging of the base 10 is completed, it is realized that the electrical signals in the base 10 are transmitted to the external components of the packaging structure through the pad 12, the metal connecting pillar 20 and the solder ball 14.

In this embodiment, a wire bonding process is used to form the metal connecting post 20 with a curved side surface. Compared with the electroplating process used in the related art to form the filling metal 13, a barrier layer and a seed layer need to be formed on the surface of the pad 12 first. According to the method, the packaging method provided by the embodiment of the present application has a simple process for forming the metal connecting pillar 20 and lower cost. In addition, the metal connecting pillar 20 is in direct contact with the pad 12 without any other film layers in between, which can reduce the risk of unstable connection between the metal connecting pillar 20 and the pad 12 due to film fracture.

In addition, when the packaging method provided by the embodiment of the present application is used for packaging, before the packaging, the multiple pads 12 on the surface of the base body 10 exist independently, and there is no electroplating bridge 15 shown in FIG. 1b. Therefore, the structure of the base body 10 is simple, thereby simplifying the structure of the packaging structure. Moreover, there is no need to cut off the plating bridge 15 after the packaging is completed, which can simplify the process flow.

Above, it should be noted that, regardless of whether the electronic device 1 is a terminal device, a smart display wearable device (such as AR or VR), a communication device, a car machine, a smart car, etc., the foregoing embodiment 1 to embodiment 4 are shown in The packaging structure can be electrically connected to the PCB board in the electronic device 1. The PCB board is used to carry the above-mentioned packaging structure and complete signal interaction with the packaging structure to provide driving signals to the electronic device 1. The packaging structure is not limited to be only applicable to the electronic device 1 shown in FIG. 2.

The above are only specific implementations of this application, but the scope of protection of the application is not limited to this. Any person skilled in the art can easily think of changes or substitutions within the technical scope disclosed in this application, and they should all be covered Within the scope of protection of this application. Therefore, the protection scope of this application shall be subject to the protection scope of the claims.

Claims

A packaging structure, characterized in that it comprises:

A base, the base includes a pad; the pad is disposed on the first surface of the base;

The metal connecting pillar is arranged on the surface of the pad and is connected to the pad;

The first insulating layer covers the first surface of the base, the first insulating layer has a first via hole, and the first via hole penetrates the first insulating layer; part or all of the The metal connecting post is arranged in the first via hole;

Wherein, the side surface of the metal connecting column is a curved surface, and the metal connecting column is used to transmit the electrical signal of the base body.
The package structure according to claim 1, wherein the metal connecting post is prepared by a wire bonding process.
The package structure according to claim 1, wherein the side surface of the metal connecting pillar is a spherical surface.
The package structure of claim 1, wherein the base further comprises an interdigital transducer, and the interdigital transducer is disposed on the first surface of the base;

The first insulating layer further has a second via hole, and the second via hole penetrates the first insulating layer; the interdigital transducer is disposed in the second via hole.
The package structure according to claim 1, wherein the package structure further comprises: a second insulating layer;

The second insulating layer is disposed on the surface of the first insulating layer, the second insulating layer has a third via hole, and the third via hole penetrates the second insulating layer and is connected to the first via hole. Connected; part of the metal connecting column is arranged in the third via.
The package structure according to claim 5, wherein a protective cavity is formed between the second insulating layer, the first insulating layer and the base, and the interdigital transducer is located in the protective cavity.
The package structure of claim 5, wherein the thickness of the metal connecting pillar in the first direction is h1, the thickness of the first insulating layer in the first direction is h2, and the thickness of the first insulating layer in the first direction is h2. The thickness of the second insulating layer along the first direction is h3, where h1=((h2+h3)-5μm)～((h2+h3)+5μm);

Wherein, the first direction is a direction perpendicular to the substrate.
The package structure according to claim 5, wherein the second insulating layer comprises a first sub-insulating layer and a second sub-insulating layer;

The first sub-insulating layer is in direct contact with the first insulating layer, and the first sub-insulating layer, the first insulating layer and the base constitute a protection cavity.
The package structure according to claim 1, wherein the package structure further comprises solder balls;

The pad is arranged at one end of the metal connection pillar, the solder ball is arranged at the other end of the metal connection pillar relative to the pad, and the solder ball is connected to the metal connection pillar for transmission The electrical signal of the substrate.
The package structure according to claim 1, wherein the substrate is a chip, an interdigital transducer is further provided on the substrate, and the interdigital transducer is provided on the first of the substrate. Surface; the first insulating layer also has a second via hole, the second via hole penetrates the first insulating layer; the interdigital transducer is disposed in the second via hole;

The package structure further includes: a second insulating layer; the second insulating layer is disposed on the surface of the first insulating layer, the second insulating layer has a third via hole, and the third via hole penetrates the The second insulating layer is in communication with the first via; part of the metal connecting pillar is disposed in the third via;

A protective cavity is formed between the second insulating layer, the first insulating layer and the base, and the interdigital transducer is located in the protective cavity.
An electronic device, comprising a PCB board, characterized in that the electronic device further comprises the packaging structure according to any one of claims 1-10, and the packaging structure is electrically connected to the PCB board.
The electronic device according to claim 11, wherein the electronic device further comprises a display module, a middle frame and a cover plate;

The light emitting surface of the display module faces the cover plate, and the back of the display module faces the middle frame;

The PCB board is arranged on the surface of the middle frame away from the display module.
A method for packaging a package structure, wherein the package structure includes a base, the base includes a pad, and the pad is disposed on a first surface of the base;

The packaging method includes:

A metal connecting pillar is formed on the surface of the pad; the metal connecting pillar is formed by a wire bonding process; the side surface of the metal connecting pillar is a curved surface, the metal connecting pillar is connected to the pad, and the metal connecting The column is used to transmit the electrical signal of the substrate;

A first insulating layer is formed on the first surface of the substrate; the first insulating layer has a first via hole, and the first via hole penetrates the first insulating layer; part or all of the metal The connecting column is arranged in the first via hole.
15. The packaging method of claim 13, wherein after forming a metal connection post on the surface of the pad, a first insulating layer is formed on the first surface of the base.
The packaging method of claim 13, wherein the base is a chip, and the base further comprises an interdigital transducer; the interdigital transducer is disposed on the first surface of the base;

The first insulating layer formed on the first surface of the substrate further has a second via hole, the second via hole penetrates the first insulating layer, and the interdigital transducer is located on the first insulating layer. Within the second via hole.
The packaging method according to claim 15, wherein the packaging method further comprises:

A second insulating layer is formed on the side of the first insulating layer away from the base; the second insulating layer has a third via, the third via penetrates the second insulating layer, and the third The via hole is communicated with the first via hole; part of the metal connecting post is arranged in the third via hole.
The packaging method of claim 16, wherein a protective cavity is formed between the second insulating layer, the first insulating layer and the base, and the interdigital transducer is located in the protective cavity. Inside.
The packaging method according to claim 16, wherein the forming a second insulating layer on a side of the first insulating layer away from the substrate comprises:

Forming a second insulating film layer on the surface of the first insulating layer away from the substrate, and the second insulating film layer is formed by a lamination process;

The third via hole is formed on the second insulating film layer to form the second insulating layer.
The packaging method of claim 16, wherein the packaging method further comprises:

A third insulating layer is formed on the side of the second insulating layer away from the base; the third insulating layer has a fourth via, the fourth via penetrates the third insulating layer, and the fourth The via hole is communicated with the third via hole; part of the metal connecting post is arranged in the fourth via hole.
18. The packaging method of claim 19, wherein forming a third insulating layer on a side of the second insulating layer away from the substrate comprises:

Forming a third insulating film layer on the surface of the second insulating layer away from the substrate, and the third insulating film layer is formed by a lamination process;

The fourth via hole is formed on the third insulating film layer to form the third insulating layer.
15. The packaging method of claim 15, wherein the forming a first insulating layer on the first surface of the substrate comprises:

Forming a first insulating film layer on the first surface of the substrate;

The first via hole and the second via hole are formed on the first insulating film layer.
The packaging method according to any one of claims 13-21, wherein the packaging method further comprises:

A solder ball is formed at one end of the metal connection column; the solder ball is disposed at the other end of the metal connection column relative to the pad, and the solder ball is connected to the metal connection column for transmitting the The electrical signal of the substrate.
The packaging method of claim 13, wherein the substrate is a chip, an interdigital transducer is further provided on the substrate, and the interdigital transducer is provided on the first of the substrate. surface;

Forming a first insulating layer on the first surface of the base includes:

A first insulating film layer is formed on the first surface of the substrate; the first via hole and the second via hole are formed on the first insulating film layer to form a first insulating layer; the second The via hole penetrates the first insulating layer, and the interdigital transducer is located in the second via hole;

Wherein, after forming the metal connecting pillar on the surface of the pad, forming the first insulating layer on the first surface of the base body;

The packaging method further includes:

Forming a second insulating film layer on the surface of the first insulating layer away from the substrate; forming a third via hole on the second insulating film layer to form a second insulating layer;

The third via hole penetrates the second insulating layer, and the third via hole communicates with the first via hole; part of the metal connecting pillar is disposed in the third via hole; the second A protective cavity is formed between the insulating layer, the first insulating layer and the base, and the interdigital transducer is located in the protective cavity.