WO2021166672A1 - 撮像装置、電子機器 - Google Patents

撮像装置、電子機器 Download PDF

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Publication number
WO2021166672A1
WO2021166672A1 PCT/JP2021/004221 JP2021004221W WO2021166672A1 WO 2021166672 A1 WO2021166672 A1 WO 2021166672A1 JP 2021004221 W JP2021004221 W JP 2021004221W WO 2021166672 A1 WO2021166672 A1 WO 2021166672A1
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WIPO (PCT)
Prior art keywords
pixel
light
lens
unit
photoelectric conversion
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PCT/JP2021/004221
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English (en)
French (fr)
Japanese (ja)
Inventor
正彦 中溝
山本　篤志
兼作 前田
Original Assignee
ソニーセミコンダクタソリューションズ株式会社
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Priority to JP2022501786A priority Critical patent/JPWO2021166672A1/ja
Publication of WO2021166672A1 publication Critical patent/WO2021166672A1/ja

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/04—Mountings, adjusting means, or light-tight connections, for optical elements for lenses with mechanism for focusing or varying magnification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B11/00—Filters or other obturators specially adapted for photographic purposes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B17/00—Details of cameras or camera bodies; Accessories therefor
    • G03B17/02—Bodies
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

Definitions

  • This technology relates to an imaging device and an electronic device, for example, an imaging device and an electronic device that realizes miniaturization and low profile of the device configuration and suppresses the occurrence of flare and ghost to perform imaging.
  • the lens and the solid-state image sensor are closer to each other on the optical axis, and the infrared light cut filter is arranged near the lens.
  • a technique has been proposed that realizes miniaturization of a solid-state image sensor by configuring a lens that is the lowest layer of a lens group composed of a plurality of lenses on a solid-state image sensor.
  • the lens of the lowest layer is formed on the solid-state image sensor, although it contributes to the miniaturization and the reduction of the height of the device configuration, the distance between the infrared light cut filter and the lens becomes shorter. , Flare and ghost caused by internal disturbance reflection due to light reflection occur.
  • This disclosure has been made in view of such a situation, and in particular, in a solid-state image sensor, it is possible to realize miniaturization and low profile, and to suppress the occurrence of flare and ghost.
  • the imaging device on one side of the present technology has a photoelectric conversion unit that generates a pixel signal by photoelectric conversion according to the amount of incident light, and a light receiving surface in which a plurality of the photoelectric conversion units are arranged in an array.
  • a lens group composed of a plurality of lenses for focusing the incident light, and a lens forming the lowest layer of the lens group with respect to the incident direction of the incident light, and are arranged in a fixed state.
  • a color filter is provided between the lowermost layer lens and the light receiving surface, and the colors of the color filters arranged on the plurality of adjacent photoelectric conversion units are the same.
  • the electronic device on one aspect of the present technology has a photoelectric conversion unit that generates a pixel signal by photoelectric conversion according to the amount of incident light, and a light receiving surface in which a plurality of the photoelectric conversion units are arranged in an array.
  • a lens group composed of a plurality of lenses for focusing the incident light, and a lens forming the lowest layer of the lens group with respect to the incident direction of the incident light, and are arranged in a fixed state.
  • An image pickup device provided with a color filter between the lowermost layer lens and the light receiving surface, and the color of the color filter arranged on a plurality of adjacent photoelectric conversion units is the same color, and the above. It includes a processing unit that processes a signal from the image pickup device.
  • a photoelectric conversion unit that generates a pixel signal by photoelectric conversion according to the amount of incident light and a light receiving surface in which a plurality of the photoelectric conversion units are arranged in an array.
  • a lens group composed of a plurality of lenses for focusing the incident light, and a lens forming the lowest layer of the lens group with respect to the incident direction of the incident light, and are arranged in a fixed state.
  • a color filter is provided between the lowest layer lens and the light receiving surface. Further, the colors of the color filters arranged on the plurality of adjacent photoelectric conversion units are the same.
  • the electronic device on one aspect of the present technology is configured to include the image pickup device.
  • the imaging device and the electronic device may be independent devices or internal blocks constituting one device.
  • FIG. 1 It is a figure which shows the structure of an example of an electronic device. It is a figure which shows an example of the schematic structure of the endoscopic surgery system. It is a block diagram which shows an example of the functional structure of a camera head and a CCU. It is a block diagram which shows an example of the schematic structure of a vehicle control system. It is explanatory drawing which shows an example of the installation position of the vehicle exterior information detection unit and the image pickup unit.
  • FIG. 1 is a side sectional view of the image pickup apparatus.
  • the image pickup device 1 of FIG. 1 is composed of a solid-state image pickup element 11, a glass substrate 12, an IRCF (infrared light cut filter) 14, a lens group 16, a circuit board 17, an actuator 18, a connector 19, and a spacer 20.
  • IRCF infrared light cut filter
  • the solid-state image sensor 11 is an image sensor made of so-called CMOS (Complementary Metal Oxide Semiconductor), CCD (Charge Coupled Device), or the like, and is fixed in a state of being electrically connected on the circuit board 17.
  • CMOS Complementary Metal Oxide Semiconductor
  • CCD Charge Coupled Device
  • the solid-state image sensor 11 is composed of a plurality of pixels arranged in an array, and is focused and incident on the pixel unit from the upper part of the drawing via the lens group 16. A pixel signal corresponding to the amount of incident light is generated and output as an image signal from the connector 19 to the outside via the circuit board 17.
  • a glass substrate 12 is provided on the upper surface of the solid-state image sensor 11 in FIG. 1, and is attached by a transparent adhesive (GLUE) 13 having a refractive index substantially the same as that of the glass substrate 12.
  • GLUE transparent adhesive
  • IRCF14 that cuts infrared light from the incident light is provided on the upper surface of the glass substrate 12 in FIG. 1, and is a transparent adhesive (GLUE) having a refractive index substantially the same as that of the glass substrate 12. ) 15 is pasted together.
  • IRCF14 is composed of, for example, blue plate glass, and cuts (removes) infrared light.
  • the solid-state image sensor 11, the glass substrate 12, and the IRCF 14 are laminated and bonded by the transparent adhesives 13 and 15, to form an integral structure, and are connected to the circuit board 17.
  • the solid-state image sensor 11, the glass substrate 12, and the IRCF 14 surrounded by the alternate long and short dash line in the figure are bonded and integrated with adhesives 13 and 15 having substantially the same refractive index. , Hereinafter, it is also simply referred to as an integrated structure portion 10.
  • the IRCF 14 may be attached on the glass substrate 12 after being separated into individual pieces in the manufacturing process of the solid-state image sensor 11, or the wafer-shaped glass substrate 12 composed of a plurality of solid-state image sensors 11. After the large-format IRCF 14 is attached to the entire upper surface, the solid-state image sensor may be individualized in units of 11, or any method may be adopted.
  • a spacer 20 is configured on the circuit board 17 so as to surround the entire solid-state image sensor 11, the glass substrate 12, and the IRCF 14 integrally configured. Further, an actuator 18 is provided on the spacer 20.
  • the actuator 18 has a cylindrical shape, and has a built-in lens group 16 formed by stacking a plurality of lenses inside the cylinder, and drives the actuator 18 in the vertical direction in FIG.
  • the actuator 18 moves the lens group 16 in the vertical direction (front-back direction with respect to the optical axis) in FIG. Accordingly, autofocus is realized by adjusting the focus so as to form an image of the subject on the imaging surface of the solid-state image sensor 11.
  • FIG. 2 shows a schematic view of the appearance of the integrated structure portion 10.
  • the integrated structure portion 10 shown in FIG. 2 is a semiconductor package in which a solid-state image sensor 11 made of a laminated substrate composed of a lower substrate 25 and an upper substrate 26 laminated is packaged.
  • An R (red), G (green), or B (blue) color filter 27 and an on-chip lens 28 are formed on the upper surface of the upper substrate 26. Further, the upper substrate 26 is connected to the glass substrate 12 for protecting the on-chip lens 28 in a cavityless structure via an adhesive 13 made of a glass seal resin.
  • the upper substrate 26 is formed with a pixel region 21 in which pixel portions for photoelectric conversion are two-dimensionally arranged in an array, and a control circuit 22 for controlling the pixel portions.
  • a logic circuit 23 such as a signal processing circuit for processing a pixel signal output from a pixel unit is formed on the lower substrate 25.
  • only the pixel region 21 may be formed on the upper substrate 26, and the control circuit 22 and the logic circuit 23 may be formed on the lower substrate 25.
  • the logic circuit 23 or both the control circuit 22 and the logic circuit 23 are formed on the lower substrate 25 different from the upper substrate 26 of the pixel region 21 and laminated to form one semiconductor substrate.
  • the size of the image pickup apparatus 1 can be reduced as compared with the case where the pixel region 21, the control circuit 22, and the logic circuit 23 are arranged in the plane direction.
  • the upper substrate 26 on which at least the pixel region 21 is formed will be referred to as a pixel sensor substrate 26, and the lower substrate 25 on which at least the logic circuit 23 is formed will be referred to as a logic substrate 25.
  • FIG. 4 shows a configuration example of the solid-state image sensor 11.
  • the solid-state image sensor 11 includes a pixel array unit 33 in which pixels 32 are arranged in a two-dimensional array, a vertical drive circuit 34, a column signal processing circuit 35, a horizontal drive circuit 36, an output circuit 37, a control circuit 38, and input / output. Includes terminal 39.
  • the pixel 32 includes a photodiode as a photoelectric conversion element and a plurality of pixel transistors. An example of the circuit configuration of the pixel 32 will be described later with reference to FIG.
  • the pixel 32 may have a shared pixel structure.
  • This pixel sharing structure is composed of a plurality of photodiodes, a plurality of transfer transistors, one shared floating diffusion (floating diffusion region), and one shared other pixel transistor. That is, in the shared pixel, the photodiode and the transfer transistor constituting the plurality of unit pixels are configured by sharing the other pixel transistor.
  • the control circuit 38 receives an input clock and data for instructing an operation mode and the like, and outputs data such as internal information of the solid-state image sensor 11. That is, the control circuit 38 generates a clock signal or a control signal that serves as a reference for the operation of the vertical drive circuit 34, the column signal processing circuit 35, the horizontal drive circuit 36, etc., based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock. do. Then, the control circuit 38 outputs the generated clock signal and control signal to the vertical drive circuit 34, the column signal processing circuit 35, the horizontal drive circuit 36, and the like.
  • the vertical drive circuit 34 is composed of, for example, a shift register, selects a predetermined pixel drive wiring 40, supplies a pulse for driving the pixel 32 to the selected pixel drive wiring 40, and drives the pixel 32 in a row unit. do. That is, the vertical drive circuit 34 selectively scans each pixel 32 of the pixel array unit 33 in a row-by-row manner in the vertical direction, and a pixel signal based on the signal charge generated in the photoelectric conversion unit of each pixel 32 according to the amount of light received. Is supplied to the column signal processing circuit 35 through the vertical signal line 41.
  • the column signal processing circuit 35 is arranged for each column of the pixel 32, and performs signal processing such as noise removal for each pixel string of the signal output from the pixel 32 for one row.
  • the column signal processing circuit 5 performs signal processing such as CDS (Correlated Double Sampling) and AD conversion for removing fixed pattern noise peculiar to pixels.
  • the horizontal drive circuit 36 is composed of, for example, a shift register, and by sequentially outputting horizontal scanning pulses, each of the column signal processing circuits 35 is sequentially selected, and a pixel signal is output from each of the column signal processing circuits 35 as a horizontal signal line. Output to 42.
  • the output circuit 37 performs signal processing on the signals sequentially supplied from each of the column signal processing circuits 35 through the horizontal signal line 42 and outputs the signals.
  • the output circuit 37 may, for example, only buffer, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.
  • the input / output terminal 39 exchanges signals with the outside.
  • the solid-state image sensor 11 configured as described above is a CMOS image sensor called a column AD method in which a column signal processing circuit 35 that performs CDS processing and AD conversion processing is arranged for each pixel string.
  • FIG. 5 shows an equivalent circuit of pixels 32.
  • the pixel 32 shown in FIG. 5 shows a configuration that realizes an electronic global shutter function.
  • the pixel 32 includes a photodiode 51 as a photoelectric conversion element, a first transfer transistor 52, a memory unit (MEM) 53, a second transfer transistor 54, an FD (floating diffusion region) 55, a reset transistor 56, an amplification transistor 57, and a selection transistor. It has 58 and an emission transistor 59.
  • the photodiode 51 is a photoelectric conversion unit that generates and stores an electric charge (signal charge) according to the amount of received light.
  • the anode terminal of the photodiode 51 is grounded, and the cathode terminal is connected to the memory unit 53 via the first transfer transistor 52. Further, the cathode terminal of the photodiode 51 is also connected to a discharge transistor 59 for discharging unnecessary electric charges.
  • the memory unit 53 is a charge holding unit that temporarily holds the electric charge until the electric charge is transferred to the FD 55.
  • the second transfer transistor 54 When the second transfer transistor 54 is turned on by the transfer signal TRG, the second transfer transistor 54 reads out the electric charge held in the memory unit 53 and transfers it to the FD55.
  • the FD55 is a charge holding unit that holds the electric charge read from the memory unit 53 to read it as a signal.
  • the reset transistor 56 is turned on by the reset signal RST, the electric charge stored in the FD55 is discharged to the constant voltage source VDD to reset the potential of the FD55.
  • the amplification transistor 57 outputs a pixel signal according to the potential of the FD55. That is, the amplification transistor 57 constitutes a load MOS 60 as a constant current source and a source follower circuit, and a pixel signal indicating a level corresponding to the charge stored in the FD 55 is a column signal from the amplification transistor 57 via the selection transistor 58. It is output to the processing circuit 35 (FIG. 4).
  • the load MOS 60 is arranged in, for example, the column signal processing circuit 35.
  • the selection transistor 58 is turned on when the pixel 32 is selected by the selection signal SEL, and outputs the pixel signal of the pixel 32 to the column signal processing circuit 35 via the vertical signal line 41.
  • the discharge transistor 59 When the discharge transistor 59 is turned on by the discharge signal OFG, the discharge transistor 59 discharges the unnecessary charge stored in the photodiode 51 to the constant voltage source VDD.
  • the transfer signals TRX and TRG, the reset signal RST, the discharge signal OFG, and the selection signal SEL are supplied from the vertical drive circuit 34 via the pixel drive wiring 40.
  • the high-level emission signal OFG is supplied to the emission transistor 59 to turn on the emission transistor 59, and the electric charge stored in the photodiode 51 is discharged to the constant voltage source VDD to all the pixels. Photodiode 51 is reset.
  • the first transfer transistor 52 When a predetermined exposure time elapses, the first transfer transistor 52 is turned on by the transfer signal TRX in all the pixels of the pixel array unit 33, and the electric charge accumulated in the photodiode 51 is transferred to the memory unit 53. Will be done.
  • the electric charges held in the memory unit 53 of each pixel 32 are sequentially read out to the column signal processing circuit 35 row by row.
  • the second transfer transistor 54 of the pixel 32 of the read line is turned on by the transfer signal TRG, and the electric charge held in the memory unit 53 is transferred to the FD55.
  • the selection transistor 58 is turned on by the selection signal SEL, a signal indicating the level corresponding to the electric charge stored in the FD 55 is output from the amplification transistor 57 to the column signal processing circuit 35 via the selection transistor 58.
  • the exposure time is set to be the same for all the pixels of the pixel array unit 33, and after the exposure is completed, the electric charge is temporarily held in the memory unit 53. It is possible to perform a global shutter operation (imaging) in which electric charges are sequentially read from the memory unit 53 in line units.
  • the circuit configuration of the pixel 32 is not limited to the configuration shown in FIG. 5, and for example, a circuit configuration that does not have the memory unit 53 and operates by the so-called rolling shutter method can be adopted.
  • FIG. 6 is an enlarged cross-sectional view showing a part of the solid-state image sensor 11.
  • a multilayer wiring layer 82 is formed on the upper side (pixel sensor substrate 26 side) of a semiconductor substrate 81 (hereinafter referred to as a silicon substrate 81) made of silicon (Si).
  • the multi-layer wiring layer 82 constitutes the control circuit 22 and the logic circuit 23 of FIG.
  • the multilayer wiring layer 82 includes a plurality of wiring layers 83 including an uppermost wiring layer 83a closest to the pixel sensor substrate 26, an intermediate wiring layer 83b, and a lowermost wiring layer 83c closest to the silicon substrate 81. It is composed of an interlayer insulating film 84 formed between the wiring layers 83.
  • the plurality of wiring layers 83 are formed of, for example, copper (Cu), aluminum (Al), tungsten (W), etc.
  • the interlayer insulating film 84 is formed of, for example, a silicon oxide film, a silicon nitride film, or the like. ..
  • Each of the plurality of wiring layers 83 and the interlayer insulating film 84 may be formed of the same material in all layers, or two or more materials may be used properly depending on the layer.
  • a silicon through hole 85 penetrating the silicon substrate 81 is formed at a predetermined position of the silicon substrate 81, and silicon is formed by embedding a connecting conductor 87 in the inner wall of the silicon through hole 85 via an insulating film 86.
  • a through electrode (TSV: Through Silicon Via) 88 is formed.
  • the insulating film 86 can be formed of, for example, a SiO2 film or a SiN film.
  • an insulating film 86 and a connecting conductor 87 are formed along the inner wall surface, and the inside of the silicon through hole 85 is hollow.
  • the silicon through hole 85 The entire interior may be embedded with a connecting conductor 87. In other words, it does not matter whether the inside of the through hole is embedded with a conductor or a part of the through hole is hollow. This also applies to the through silicon via (TCV: Through Chip Via) 105 and the like.
  • the connecting conductor 87 of the through silicon via 88 is connected to the rewiring 90 formed on the lower surface side of the silicon substrate 81, and the rewiring 90 is connected to the solder ball 29.
  • the connecting conductor 87 and the rewiring 90 can be formed of, for example, copper (Cu), tungsten (W), tungsten (W), polysilicon, or the like.
  • solder mask (solder resist) 91 is formed so as to cover the rewiring 90 and the insulating film 86, except for the region where the solder balls 29 are formed.
  • a multilayer wiring layer 102 is formed on the lower side (logic substrate 25 side) of the semiconductor substrate 101 (hereinafter referred to as silicon substrate 101) made of silicon (Si).
  • the multi-layer wiring layer 102 constitutes the pixel circuit of the pixel region 21 of FIG.
  • the multilayer wiring layer 102 includes a plurality of wiring layers 103 including an uppermost wiring layer 103a closest to the silicon substrate 101, an intermediate wiring layer 103b, and a lowermost wiring layer 103c closest to the logic substrate 25. It is composed of an interlayer insulating film 104 formed between the wiring layers 103.
  • the same material as the materials of the wiring layer 83 and the interlayer insulating film 84 described above can be adopted. Further, the same as the wiring layer 83 and the interlayer insulating film 84 described above, the plurality of wiring layers 103 and the interlayer insulating film 104 may be formed by using one or more materials properly.
  • the multi-layer wiring layer 102 of the pixel sensor board 26 is composed of the three-layer wiring layer 103, and the multi-layer wiring layer 82 of the logic board 25 is composed of the four-layer wiring layer 83.
  • the total number of wiring layers is not limited to this, and can be formed by any number of layers.
  • a photodiode 51 formed by a PN junction is formed for each pixel 32.
  • the multilayer wiring layer 102 and the silicon substrate 101 are also formed with a plurality of pixel transistors such as the first transfer transistor 52 and the second transfer transistor 54, a memory unit (MEM) 53, and the like. ing.
  • the through silicon via 109 connected to the wiring layer 103a of the pixel sensor substrate 26 and the wiring layer 83a of the logic substrate 25 A connected through silicon via 105 is formed.
  • the through silicon via 105 and the through silicon via 109 are connected by a connection wiring 106 formed on the upper surface of the silicon substrate 101. Further, an insulating film 107 is formed between each of the through silicon via 109 and the through silicon via 105 and the silicon substrate 101. Further, a color filter 27 and an on-chip lens 28 are formed on the upper surface of the silicon substrate 101 via a flattening film (insulating film) 108.
  • the solid-state image sensor 11 shown in FIG. 2 has a laminated structure in which the multilayer wiring layer 102 side of the logic substrate 25 and the multilayer wiring layer 82 side of the pixel sensor substrate 26 are bonded together.
  • FIG. 6 the surface where the multilayer wiring layer 102 side of the logic substrate 25 and the multilayer wiring layer 82 side of the pixel sensor substrate 26 are bonded is shown by a broken line.
  • the wiring layer 103 of the pixel sensor substrate 26 and the wiring layer 83 of the logic substrate 25 are connected by two through electrodes, a through silicon via 109 and a through silicon via 105, and logic.
  • the wiring layer 83 of the substrate 25 and the solder ball (back surface electrode) 29 are connected to the through silicon via 88 by the rewiring 90.
  • the height direction can also be lowered.
  • the IRCF 14 is provided on the solid-state image pickup device 11 and the glass substrate 12, it is possible to suppress the generation of flare and ghost due to the diffused reflection of light. ..
  • the solid line is used.
  • the incident light is condensed as shown and is incident on the solid-state image sensor (CIS) 11 at position F0 via the IRCF 14, the glass substrate 12, and the adhesive 13, and then at position F0 as shown by the dotted line. It is reflected and reflected light is generated.
  • the reflected light reflected at the position F0 is partially arranged on the back surface of the IRCF 14 at a position separated from the glass substrate 12 via, for example, the adhesive 13 and the glass substrate 12 ( (Lower surface in FIG. 7) Reflected by R1 and again incident on the solid-state image sensor 11 at position F1 via the glass substrate 12 and the adhesive 13.
  • the reflected light reflected at the focal point F0 includes, for example, the adhesive 13, the glass substrate 12, and the IRCF 14 arranged at a position separated from the glass substrate 12. It is transmitted, reflected by the upper surface (upper surface in FIG. 7) R2 of the IRCF 14, and is incident on the solid-state image sensor 11 again at the position F2 via the IRCF 14, the glass substrate 12, and the adhesive 13.
  • the light that is incident again causes flare and ghost due to internal disturbance reflection. More specifically, as shown in the image P1 of FIG. 8, when the illumination L is imaged in the solid-state image sensor 11, it appears as flare or ghost as shown by the reflected lights R21 and R22. ..
  • the IRCF 14 is configured on the glass substrate 12 as in the imaging device 1 as shown in the right part of FIG. 7, which corresponds to the configuration of the image pickup device 1 in FIG. 1, it is shown by a solid line.
  • the incident light is collected, incident on the solid-state image sensor 11 at position F0 via the IRCF 14, the adhesive 15, the glass substrate 12, and the adhesive 13, and then reflected as shown by the dotted line.
  • the reflected light is reflected by the lens surface R11 of the lowest layer on the lens group 16 via the adhesive 13, the glass substrate 12, the adhesive 15, and the IRCF 14, but the lens group 16 is sufficiently from the IRCF 14. Since it is located at a distance from the lens, it is reflected in a range where the solid-state image sensor 11 cannot sufficiently receive light.
  • the solid-state image sensor 11, the glass substrate 12, and the IRCF 14 surrounded by the alternate long and short dash line in the figure are bonded and integrated by the adhesives 13 and 15 having substantially the same refractive index. It is configured as.
  • the integrated structure portion 10 by unifying the refractive indexes, the generation of internal disturbance reflection generated at the boundary between layers having different refractive indexes is suppressed, and for example, it is in the vicinity of the position F0 in the left portion of FIG. Re-incident at positions F1 and F2 is suppressed.
  • the configuration as shown in FIG. 1 enables the device configuration to be miniaturized and reduced in height, and the occurrence of flare and ghost due to internal disturbance reflection can be suppressed.
  • the image P1 of FIG. 8 is an image in which the illumination L is captured at night by the image pickup device 1 having the configuration of the left portion of FIG. 7, and the image P2 has the configuration of the right portion of FIG. 7 (FIG. 1). This is an image in which the illumination L is captured by the image pickup device 1 at night.
  • the configuration in which the focal length can be adjusted according to the distance to the subject by moving the lens group 16 in the vertical direction in FIG. 1 by the actuator 18 to realize autofocus will be described as an example.
  • the actuator 18 may not be provided, the focal length of the lens group 16 may not be adjusted, and the lens may function as a so-called single focus lens.
  • FIG. 9 among the lens group 16 composed of a plurality of lenses constituting the image pickup apparatus 1 in FIG. 1, the lens that is the lowest layer with respect to the incident direction of light is separated from the lens group 16 and is displayed on the IRCF14.
  • An example of the configuration of the image pickup apparatus 1 having the above configuration is shown.
  • the configurations having basically the same functions as those in FIG. 1 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
  • the image pickup device 1 of FIG. 9 differs from the image pickup device 1 of FIG. 1 in that the upper surface of the IRCF 14 in the drawing is further with respect to the incident direction of light among the plurality of lenses constituting the lens group 16. This is a point in which the lens 131, which is the lowest layer, is provided separately from the lens group 16.
  • the lens group 16 of FIG. 9 has the same reference numerals as the lens group 16 of FIG. 1, but is strictly defined in that the lens 131, which is the lowest layer with respect to the incident direction of light, is not included. Is different from the lens group 16 of FIG.
  • the IRCF 14 is provided on the glass substrate 12 provided on the solid-state image sensor 11, and the lowest layer lens 131 constituting the lens group 16 is further formed on the IRCF 14. Since it is provided, it is possible to suppress the occurrence of flare and ghost due to the diffused reflection of light.
  • the image pickup apparatus 1 shown in FIGS. 1 and 9 shows a configuration including a glass substrate 12, IRCF 14, an adhesive 15, and the like, but does not include a glass substrate 12, IRCF 14, an adhesive 15, and the like. This technology can also be applied.
  • the image pickup device 1 provided with the lens 131 shown in FIG. 9 will be described as an example. Further, in the following description, a more detailed configuration of the semiconductor package in which the solid-state image sensor 11 shown in FIG. 2 is packaged will be described. do.
  • FIG. 10 is an enlarged cross-sectional view of a part of the integrated structure portion 10 shown in FIG. 9, and FIG. 11 is a plan view of the pixel 32a when viewed from above (light receiving surface side).
  • a lens 131, an adhesive 13, an on-chip lens 28a, a flattening film 202, a color filter 27, and a photodiode 51 are laminated from the upper part of the drawing.
  • the glass substrate 12, IRCF 14, adhesive 15, and the like are not shown.
  • a photodiode 51 is formed in the pixel sensor substrate 26.
  • a color filter 27 is laminated on the photodiode 51.
  • An inter-pixel light-shielding portion 201 is formed between the color filters 27.
  • the inter-pixel light-shielding unit 201 is provided to block light so that light does not leak to adjacent pixels (photodiode 51).
  • the inter-pixel light-shielding portion 201 can be formed of a light-shielding member having a light-shielding function such as metal.
  • FIG. 11 shows 16 pixels of 4 ⁇ 4.
  • the green color filter 27 is arranged in the 2 ⁇ 2 4 pixels located in the upper left part of the figure.
  • a blue color filter 27 is arranged in the 2 ⁇ 2 4 pixels located in the upper right part of the figure.
  • a red color filter 27 is arranged in the 2 ⁇ 2 4 pixels located at the lower left in the figure.
  • a green color filter 27 is arranged in 4 pixels of 2 ⁇ 2 located at the lower right in the figure.
  • the color arrangement of the color filter 27 is a Bayer arrangement.
  • the color arrangement an arrangement other than the Bayer arrangement can be applied.
  • the color of the color filter 27 may be cyan (Cy), magenta (Mg), yellow (Ye), or the like. Moreover, white (transparent) may be included. This also applies to the following embodiments as well.
  • the on-chip lens 28a is provided for each photodiode 51.
  • the 2 ⁇ 2 4 pixels are configured to have the same color, so that, for example, the storage time of each of the 2 ⁇ 2 4 pixels is changed, and the pixel that extracts the signal depending on the amount of light is 4 pixels. You will be able to perform processing such as selecting from within. As a result, the pixels in which the electric charge is accumulated can be appropriately selected with the accumulation time according to the amount of light, and the dynamic range can be expanded.
  • the image quality may deteriorate.
  • the sensitivity may be different in the 2 ⁇ 2 4 pixels, and the image quality may be deteriorated.
  • the incident light is indicated by an arrow.
  • the angle of incidence of the incident light be the angle ⁇ .
  • the angle ⁇ is, for example, an angle with respect to a perpendicular line with respect to the surface of the flattening film 202.
  • the light input at the angle ⁇ passes through the lens 131 and is incident on the on-chip lens 28a at an angle smaller than the angle ⁇ .
  • the light incident on the on-chip lens 28a is incident at an angle close to vertical, at least an angle smaller than the angle ⁇ at which the incident light has been incident.
  • the incident light incident on the image pickup apparatus 1 passes through the lens group 16 before reaching the lens 131, even if the light is incident from an oblique direction, the incident light enters the lens group 16.
  • the incident light When it is transmitted, it is focused and corrected to an angle closer to vertical than the incident angle. Therefore, the light that reaches the lens 131 is corrected to an angle ⁇ that is close to vertical when it enters the lens 131.
  • the angle is further corrected by passing through the lens 131, and the light is further focused by the on-chip lens 28a, so that the photodiode 51 receives light converted into light that is almost vertical. Being incident.
  • the present technology it is possible to reduce the light leakage to the adjacent photodiode 51, so that the crosstalk due to the light leakage to the adjacent pixels can be reduced. Therefore, as described with reference to FIGS. 10 and 11, even when 4 pixels of 2 ⁇ 2 are made into pixels of the same color, it is possible to reduce the occurrence of a sensitivity difference between the same colors, and the image quality can be reduced. It is possible to prevent deterioration.
  • the width of the inter-pixel light-shielding portion 201 provided for reducing crosstalk may be narrowed.
  • the correction amount for pupil correction can be reduced.
  • the pixel 32a at the center of the angle of view and the pixel 32a at the end of the angle of view have the same structure, they can be efficiently collected. Light cannot be emitted, and a sensitivity difference occurs between the pixel 32a at the center of the angle of view and the pixel 32a at the end of the angle of view.
  • the optical axis of the lens group 16 and the photo There is a technique called pupil correction or the like in which the aperture of the diode 51 is adjusted and the position of the photodiode 51 is shifted according to the direction of the main light beam toward the end of the angle of view.
  • FIG. 12 shows the structure of the pixel 32a at the pixel end, and shows the structure of the pixel 32a after pupil correction.
  • the structure of the pixel 32a shown in FIG. 12 is the same as the structure of the pixel 32a shown in FIG. 11, but the on-chip lens 28a and the color filter 27 are shifted toward the center of the angle of view by performing pupil correction. It is said that it is arranged.
  • the pixel 32a shown in FIG. 12 has the center of the angle of view on the right side of the figure, and the on-chip lens 28a and the color filter 27 are shifted in the direction closer to the center of the angle of view.
  • the amount of deviation of this deviation is defined as the amount of deviation H1.
  • the lens group 16 and the lens 131 have a structure in which light converted into near-vertical light is incident on the photodiode 51. Such an effect can be obtained even at the edge of the angle of view. Therefore, the deviation amount H1 may be smaller than the deviation amount when the present technology is not applied. Even if the deviation amount H1 is set to 0, in other words, even if the pupil correction is not performed, according to the image pickup apparatus 1 to which the present technology is applied, the angle of view edge is higher than that of the image pickup apparatus to which the present technology is not applied. Also, crosstalk can be reduced.
  • the first embodiment it is possible to prevent color mixing, improve the sensitivity difference between the same colors, and prevent deterioration of image quality.
  • FIG. 13 is a diagram showing a configuration example of the pixel 32b according to the second embodiment.
  • the same parts as the pixels 32a in the first embodiment shown in FIG. 10 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
  • the pixel 32b shown in FIG. 13 has the same configuration as the pixel 32a in the first embodiment except that the trench 221b is added to the pixel 32a in the first embodiment. There is.
  • FIG. 13 Although a cross-sectional configuration example is shown in FIG. 13 as the pixel 32b in the second embodiment, the same configuration as in the case shown in FIG. 11 when viewed in a plane is the same as that of the pixel 32a in the first embodiment.
  • the 2 ⁇ 2 4 pixels 32b have the same color, and an on-chip lens 28a is provided for each pixel 32a2.
  • the trench 221b is formed between the photodiodes 51.
  • the inside of the trench 221b may be hollow or may be filled with metal.
  • the inside of the trench 221b is filled with metal, it can be integrated with the inter-pixel light-shielding portion 201.
  • FIG. 13 shows a case where the integrated configuration is used.
  • the trench 221b is provided between the photodiodes 51 to prevent light from leaking from the adjacent pixel 32a photodiode 51 and to electrically separate the photodiode 51. By providing the trench 221b in this way, the crosstalk between the pixels between the pixels 32b can be further reduced.
  • FIG. 14 shows the structure of the pixel 32b at the pixel end, and shows the structure of the pixel 32b for which pupil correction has been performed.
  • the structure of the pixel 32a shown in FIG. 14 is the same as the structure of the pixel 32b shown in FIG. 13, but the on-chip lens 28a and the color filter 27 are shifted toward the center of the angle of view by performing pupil correction. It is said that it is arranged.
  • the lens group 16 and the lens 131 have a structure in which light converted into near-vertical light is incident on the photodiode 51. Therefore, even in the pixel 32b shown in FIG. 14, the deviation amount H1 may be smaller than the deviation amount when the present technology is not applied.
  • the second embodiment it is possible to prevent color mixing, improve the sensitivity difference between the same colors, and prevent deterioration of image quality.
  • FIG. 15 is a diagram showing a cross-sectional configuration example of the pixel 32c in the third embodiment
  • FIG. 16 is a diagram showing a plane configuration example.
  • the same parts as the pixels 32a in the first embodiment shown in FIGS. 10 and 11 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
  • the pixel 32a in the first embodiment shown in FIGS. 10 and 11 includes an on-chip lens 28 for each photodiode 51.
  • the difference is that the 2 ⁇ 2 4-pixel 32c is provided with one on-chip lens 28c, and the other points are the same.
  • FIG. 16 shows 16 pixels of 4 ⁇ 4.
  • green color filters 27 are arranged on the 2 ⁇ 2 photodiodes 51 located in the upper left portion of the drawing.
  • a blue color filter 27 is arranged on each of the 2 ⁇ 2 photodiodes 51 located in the upper right part of the drawing.
  • a red color filter 27 is arranged on each of the 2 ⁇ 2 photodiodes 51 located at the lower left in the figure. Further, a green color filter 27 is arranged on each of the 2 ⁇ 2 photodiodes 51 located at the lower right in the figure.
  • the color arrangement of the color filter 27 is a Bayer arrangement. Such a configuration is the same as in the first and second embodiments.
  • the on-chip lens 28C is provided for each of four 2 ⁇ 2 photodiodes 51. That is, one on-chip lens 28c is laminated on the 2 ⁇ 2 photodiode 51 in which the green color filter 27 located in the upper left portion of the drawing is arranged. Further, one on-chip lens 28c is laminated on a 2 ⁇ 2 photodiode 51 in which a blue color filter 27 located in the upper left portion of the figure is arranged.
  • one on-chip lens 28c is laminated on the 2 ⁇ 2 photodiode 51 in which the red color filter 27 located at the lower left in the figure is arranged. Further, one on-chip lens 28c is laminated on a 2 ⁇ 2 photodiode 51 in which a green color filter 27 located at the lower right in the figure is arranged.
  • the on-chip lens 28c is shared by 4 pixels, and by configuring the 4 pixels to be the same color pixels, for example, the accumulation time of each of the 2 ⁇ 2 4 pixels can be changed.
  • processing such as selecting a pixel for extracting a signal from among four pixels.
  • the pixels in which the electric charge is accumulated can be appropriately selected with the accumulation time according to the amount of light, and the dynamic range can be expanded.
  • the width of the inter-pixel light-shielding portion 201 provided for reducing crosstalk may be narrowed.
  • the photodiode 51 can be formed larger, and the sensitivity can be improved.
  • FIG. 17 shows the structure of the pixel 32c at the pixel end, and shows the structure of the pixel 32c with pupil correction.
  • the structure of the pixel 32c shown in FIG. 17 is the same as the structure of the pixel 32c shown in FIG. 15, but the on-chip lens 28c and the color filter 27 are shifted toward the center of the angle of view by performing pupil correction. It is said that it is arranged.
  • the lens group 16 and the lens 131 have a structure in which light converted into near-vertical light is incident on the photodiode 51. Therefore, even in the pixel 32c shown in FIG. 17, the deviation amount H1 may be smaller than the deviation amount when the present technology is not applied.
  • the third embodiment it is possible to prevent color mixing, improve the sensitivity difference between the same colors, and prevent deterioration of image quality.
  • FIG. 18 is a diagram showing a configuration example of the pixel 32d according to the fourth embodiment.
  • the same parts as the pixels 32c in the third embodiment shown in FIG. 15 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
  • the pixel 32d shown in FIG. 18 has the same configuration as the pixel 32c in the third embodiment except that the trench 221d is added to the pixel 32c in the third embodiment. There is.
  • FIG. 18 Although a cross-sectional configuration example is shown in FIG. 18 as the pixel 32d in the fourth embodiment, the same configuration as in the case shown in FIG. 16 when viewed in a plane is the same as that of the pixel 32c in the third embodiment. 2 ⁇ 2 4 pixels 32d have the same color, and one on-chip lens 28c is laminated.
  • the trench 221d is formed between the photodiodes 51.
  • the inside of the trench 221d may be hollow or may be filled with metal.
  • the structure can be integrated with the inter-pixel light-shielding portion 201.
  • FIG. 18 illustrates a case where the configuration is integrated.
  • the trench 221d is provided between the photodiodes 51 to prevent light from leaking from the adjacent photodiodes 51 and to realize electrical separation of the photodiodes 51. By providing the trench 221d in this way, crosstalk between pixels between the pixels 32d can be further reduced.
  • FIG. 19 shows the structure of the pixel 32d at the pixel end, and shows the structure of the pixel 32d with pupil correction.
  • the structure of the pixel 32d shown in FIG. 19 is the same as the structure of the pixel 32d shown in FIG. 18, but the on-chip lens 28c and the color filter 27 are shifted toward the center of the angle of view by performing pupil correction. It is said that it is arranged.
  • the lens group 16 and the lens 131 have a structure in which light converted into near-vertical light is incident on the photodiode 51. Therefore, even in the pixel 32d shown in FIG. 19, the deviation amount H1 may be smaller than the deviation amount when the present technology is not applied.
  • the fourth embodiment it is possible to prevent color mixing, improve the sensitivity difference between the same colors, and prevent deterioration of image quality.
  • FIG. 20 is a diagram showing a cross-sectional configuration example of the pixel 32e in the fifth embodiment
  • FIG. 21 is a diagram showing a plane configuration example.
  • the same parts as the pixels 32c in the third embodiment shown in FIGS. 15 and 16 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
  • the pixel 32e shown in FIG. 20 is different from the pixel 32c in the third embodiment except that the thickness of the inter-pixel light-shielding portion 201 is different from that of the inter-pixel light-shielding portion 201 of the pixel 32c in the third embodiment. It has a similar configuration.
  • the inter-pixel light-shielding unit 201 of the pixels 32e shown in FIGS. 20 and 21 is composed of an inter-pixel light-shielding unit 201e-1 having a different line width and an inter-pixel light-shielding unit 201e-2.
  • the inter-pixel light-shielding portion 201e-2 is formed thicker than the inter-pixel light-shielding portion 201e-1.
  • the inter-pixel light-shielding unit 201e-1 has, for example, the same thickness as the inter-pixel light-shielding unit 201 of the pixels 32c in the third embodiment.
  • the inter-pixel light-shielding unit 2011-1 is a light-shielding unit that surrounds the outer peripheral portion of a 2 ⁇ 2 4-pixel 32e under one on-chip lens 28c.
  • the inter-pixel light-shielding unit 2011-1 is a light-shielding unit provided in a portion that shields light between pixels in which different colors are arranged. If light leaks to adjacent pixels between pixels in which different colors are arranged, light of different colors leaks. Therefore, in order to prevent such a situation, inter-pixel shading having a predetermined line width is prevented.
  • Part 201-1 is formed and is configured to have no effect.
  • the inter-pixel light-shielding unit 201-2 is a light-shielding unit formed between the pixels of 2 ⁇ 2 4 pixels 32e under one on-chip lens 28c.
  • the inter-pixel light-shielding unit 201-2 is a light-shielding unit provided in a portion that shields light between pixels in which the same color is arranged. If light leaks to adjacent pixels between pixels in which the same color is arranged, light of the same color leaks. Since it is considered that the influence is less than the case where the light of different colors leaks as described above, the inter-pixel light-shielding unit 201-2 may be formed with a line width narrower than that of the inter-pixel light-shielding unit 201-1.
  • the line width of the inter-pixel light-shielding portion 201-1 is formed to be thicker than the line width of the inter-pixel light-shielding portion 201-2. As described above, the line width of the inter-pixel light-shielding portion 201 may be different depending on the portion where the inter-pixel light-shielding portion 201 is formed.
  • the line width of the inter-pixel light-shielding unit 2011-1 can also be made narrower than the line width of the inter-pixel light-shielding unit provided on the pixels to which the present technology is not applied.
  • the inter-pixel light-shielding portion 2011-1 in this portion can sufficiently suppress light leakage (crosstalk is suppressed).
  • the thickness of the inter-pixel light-shielding portion 211-1 is also the inter-pixel light-shielding portion 201-. It may be as thin as the thickness of 2.
  • the aperture area of the photodiode 51 can be widened. Therefore, the sensitivity of the pixel 32c can be improved by narrowing the line width of the inter-pixel light-shielding portion 201-2.
  • the on-chip lens 28c and the color filter 27 are configured to shift the on-chip lens 28c and the color filter 27 toward the center of the angle of view at the pixel end by applying pupil correction to the pixel 32e in the fifth embodiment. You can also do it.
  • FIG. 22 is a diagram showing a cross-sectional configuration example of the pixel 32f in the sixth embodiment
  • FIG. 23 is a diagram showing a plane configuration example.
  • the same parts as the pixels 32c in the third embodiment shown in FIGS. 15 and 16 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
  • the third embodiment is that the pixel 32f in the sixth embodiment does not have an inter-pixel light-shielding portion formed between the pixels of the 2 ⁇ 2 four-pixel 32e under one on-chip lens 28c. Unlike the pixel 32c in the form, other points are the same.
  • the pixel 32f in the sixth embodiment and the pixel 32c in the third embodiment are compared (FIG. 15)
  • the pixel 32f is a pixel in which the pixel 32c is arranged under the color filter 27 of the same color.
  • the inter-pixel light-shielding portion 201 provided between the 32c is not formed.
  • the pixel 32f in the sixth embodiment does not have the inter-pixel light-shielding portion 201-2 formed by the pixel 32e. It is said that.
  • the pixel 32d in the fifth embodiment is an embodiment in which the line width of the inter-pixel light-shielding portion 201-2 is formed to be thin, and crosstalk can be suppressed even if the line width is made thin. Therefore, further, the pixel 32f in the sixth embodiment shows a case where the line width of the inter-pixel light-shielding portion 201-2 is set to 0, that is, a configuration in which the pixel 32f is not formed.
  • the pixel 32f in the sixth embodiment has an inter-pixel light-shielding portion 201f that surrounds an outer peripheral portion of a 2 ⁇ 2 4-pixel 32f under one on-chip lens 28c.
  • an inter-pixel light-shielding portion 201f is provided at a portion that shields light between pixels in which different colors are arranged.
  • the color filter 27f is formed so as to cover the 2 ⁇ 2 4 pixels 32f by not providing a light-shielding portion formed between the pixels of the 2 ⁇ 2 4 pixels 32f under one on-chip lens 28c. Will be done.
  • the aperture area of the photodiode 51 can be widened by providing a configuration in which a light-shielding portion formed between 2 ⁇ 2 4 pixels 32f pixels under one on-chip lens 28c is not provided. Therefore, the sensitivity of the pixel 32f can be improved.
  • the pixel 32f at the pixel end and the pupil-corrected pixel 32f have the on-chip lens 28 and the color filter 27f displaced toward the center of the angle of view.
  • the sixth embodiment it is possible to prevent color mixing, improve the sensitivity difference between the same colors, and prevent deterioration of image quality.
  • FIG. 24 is a diagram showing a configuration example of the pixel 32g according to the seventh embodiment.
  • the same parts as the pixels 32f in the sixth embodiment shown in FIG. 22 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
  • the pixel 32g shown in FIG. 24 has the same configuration as the pixel 32f in the sixth embodiment except that the trench 221g is added to the pixel 32f in the sixth embodiment. There is.
  • FIG. 24 Although a cross-sectional configuration example is shown in FIG. 24 as the pixel 32g in the seventh embodiment, the same configuration as that shown in FIG. 23 when viewed in a plane is the same as that of the pixel 32f in the sixth embodiment.
  • 32g of 4 pixels of 2 ⁇ 2 have the same color, and one on-chip lens 28c and a color filter 27f are laminated.
  • the trench 221g is formed between the photodiodes 51.
  • the inside of the trench 221g may be hollow or may be filled with metal.
  • the inter-pixel light-shielding portion 201f can be integrated with the inter-pixel light-shielding portion 201f in the portion where the inter-pixel light-shielding portion 201f is formed.
  • the trench 221g is also formed between the photodiodes 51 on the lower side of the color filter 27f in which the inter-pixel light-shielding portion 201 is not provided.
  • the trench 221g is provided between the photodiodes 51 to prevent light from leaking from the adjacent photodiodes 51 and to realize electrical separation of the photodiodes 51. By providing the trench 221 g in this way, crosstalk between pixels between the pixels 32 g can be further reduced.
  • the pixels at the pixel ends are 32 g, and the pupil-corrected pixels 32 g are arranged so that the on-chip lens 28c and the color filter 27f are shifted toward the center of the angle of view.
  • the seventh embodiment it is possible to prevent color mixing, improve the sensitivity difference between the same colors, and prevent deterioration of image quality.
  • FIG. 25 is a diagram showing a cross-sectional configuration example of the pixel 32h according to the eighth embodiment.
  • the same parts as the pixels 32g in the seventh embodiment shown in FIG. 24 are designated by the same reference numerals, and the description thereof will be omitted as appropriate.
  • the pixel 32h shown in FIG. 25 has the same configuration as the pixel 32g in the seventh embodiment, except that the thickness of the trench 221h is different from the trench 221g of the pixel 32g in the seventh embodiment. ing.
  • the trench 221h of the pixel 32h shown in FIG. 25 is composed of a trench 221-1 and a trench 221-2 having different thicknesses.
  • the trench 221h-2 is formed thinner than the trench 221h-1.
  • the trench 221h-1 has, for example, the same thickness as the trench 221g having 32 g of pixels in the seventh embodiment.
  • the trench 221h-1 is a light-shielding portion that surrounds the outer peripheral portion of a 2 ⁇ 2 4-pixel 32h under one on-chip lens 28c.
  • the trench 221h-1 is a light-shielding portion provided in a portion that shields light between pixels in which different colors are arranged. If light leaks to adjacent pixels between pixels in which different colors are arranged, light of different colors leaks. Therefore, in order to prevent such a situation, a trench 221h- having a predetermined line width is used. 1 is formed and is configured to have no effect.
  • the trench 221h-2 is a light-shielding portion formed between 2 ⁇ 2 4 pixels 32h pixels under one on-chip lens 28c.
  • the trench 221h-2 is a light-shielding portion provided in a portion that shields light between pixels in which the same color is arranged. If light leaks to adjacent pixels between pixels in which the same color is arranged, light of the same color leaks.
  • the trench 221h-2 may be formed with a line width narrower than that of the trench 221h-1, because it is considered that the influence is less than the case where the light of different colors leaks.
  • the line width of the trench 221h-1 is formed to be thicker than the line width of the trench 221h-2.
  • the line width of the trench 221h may be different depending on the portion where the trench 221h is formed.
  • the structure is such that crosstalk can be reduced. Therefore, even if the thickness of the trench 221h-2 is made thin, the crosstalk between the pixels 32h can be suppressed without being deteriorated.
  • the line width of the trench 221h-1 can also be made narrower than the line width of the inter-pixel light-shielding portion provided in the pixels to which the present technology is not applied.
  • the trench 221h-1 in this portion can sufficiently suppress light leakage (crosstalk can be suppressed).
  • the thickness of the trench 221h-1 is reduced to the same level as the thickness of the trench 221h-2 because the structure is such that crosstalk can be reduced according to the present technology. You may.
  • the opening area of the photodiode 51 can be widened. Therefore, the sensitivity of the pixel 32h can be improved by narrowing the line width of the trench 221h-2.
  • the on-chip lens 28c and the color filter 27f are configured to shift the on-chip lens 28c and the color filter 27f toward the center of the angle of view at the pixel end by applying pupil correction to the pixel 32h in the eighth embodiment. You can also do it.
  • FIG. 26 is a diagram showing a cross-sectional configuration example of the pixel 32i according to the ninth embodiment.
  • a 2 ⁇ 2 4-pixel 32 (photodiode 51) is treated as one unit, and the same color is applied on the basic unit of the 4-pixel 32 (photodiode 51).
  • the case where the filter 27 is arranged has been described as an example.
  • two photodiodes 51 are included in the subpixel 32i, the two photodiodes 51 are treated as one unit, and the same color is applied on the two photodiodes 51 which are the basic units thereof.
  • the case where the color filter 27f of the above is arranged will be described as an example.
  • the pixel 32i in the ninth embodiment shown in FIG. 26 is shown, for example, in combination with the pixel 32f in the sixth embodiment shown in FIG. 22, but is different from the embodiment other than the sixth embodiment. It is also possible to combine them.
  • the pixel 32i in the ninth embodiment shown in FIG. 26 shows the case of being combined with the pixel 32f in the sixth embodiment shown in FIG. 22, and the cross-sectional structure is as shown in FIG. 22. Become.
  • the pixel 32i shown in FIG. 26 has two photodiodes 51 as a basic unit, and a color filter 27f of the same color is laminated on the two photodiodes 51, and one on-chip lens 28c is laminated.
  • the pixel 32i shown in FIG. 26 shows an example in which the two photodiodes 51, which are the basic units, are arranged in the horizontal direction (horizontal direction in the figure), but in the vertical direction (vertical direction in the figure). It may be arranged in.
  • the pixel 32i in which two photodiodes 51 are arranged in the left-right direction or the up-down direction under one on-chip lens 28c shown in FIG. 26 acquires a phase difference called an image plane phase difference method or the like. It can be applied to a system that realizes autofocus using the phase difference.
  • the phase difference in the left-right direction can be acquired.
  • the phase difference in the vertical direction can be acquired.
  • a pixel 32i in which two photodiodes 51 are arranged in the left-right direction and a pixel 32i in which two photodiodes 51 are arranged in the vertical direction are arranged under one on-chip lens 28c inside the pixel array unit 33 or outside the pixel array unit 33. May be configured so that the phase difference in the left-right direction and the phase difference in the up-down direction can be obtained.
  • the pixel 32i in which two photodiodes 51 are arranged in the left-right direction is arranged under one on-chip lens 28c, the phase difference in the vertical direction cannot be obtained, but the number of readout gates can be reduced, and the photodiode 51 Saturation performance can be improved.
  • the ninth embodiment can be combined with the embodiments other than the sixth embodiment, for example, a configuration in which a trench 221 is provided or a configuration in which pupil correction is applied. May be.
  • the pixels 32 of the first to ninth embodiments may be applied to the pixels in the OPB (Optical Black) region.
  • OPB Optical Black
  • an image pickup device that uses an image sensor such as a CMOS (Complementary Metal Oxide Semiconductor) image sensor or a CCD (Charge Coupled Device) image sensor, the black level of the image signal obtained by the image sensor is corrected to a reference value. The clamping process is performed.
  • CMOS Complementary Metal Oxide Semiconductor
  • CCD Charge Coupled Device
  • an OPB region for detecting a reference black level is provided outside the effective pixel region of the image sensor, and each pixel value in the effective pixel region is corrected using the pixel value.
  • the structure of each pixel in the OPB region is the same as that of the pixel in the effective pixel region, except that the light incident from the outside is blocked by the light-shielding film. Therefore, the pixels 32 of the first to ninth embodiments can be applied to the pixels arranged in the OPB region. Further, since the OPB region is usually provided outside the effective pixel region, the pixels in the OPB region may be arranged with pupil correction.
  • the present technology is not limited to application to an image sensor. That is, this technology captures images on an image capture unit (photoelectric conversion unit) such as an image pickup device such as a digital still camera or a video camera, a portable terminal device having an image pickup function, or a copier that uses an image sensor as an image reader. It can be applied to all electronic devices that use elements.
  • the image pickup device may be in the form of one chip, or may be in the form of a module having an image pickup function in which the image pickup unit and the signal processing unit or the optical system are packaged together.
  • FIG. 27 is a block diagram showing a configuration example of an imaging device as an electronic device to which the present technology is applied.
  • the image sensor 1000 of FIG. 27 includes an optical unit 1001 including a lens group, an image sensor (imaging device) 1002 adopting the configuration of the image sensor 1 of FIG. 1, and a DSP (Digital Signal Processor) which is a camera signal processing circuit.
  • the circuit 1003 is provided.
  • the image sensor 1000 also includes a frame memory 1004, a display unit 1005, a recording unit 1006, an operation unit 1007, and a power supply unit 1008.
  • the DSP circuit 1003, the frame memory 1004, the display unit 1005, the recording unit 1006, the operation unit 1007, and the power supply unit 1008 are connected to each other via the bus line 1009.
  • the optical unit 1001 captures incident light (image light) from the subject and forms an image on the image pickup surface of the image pickup device 1002.
  • the image sensor 1002 converts the amount of incident light imaged on the image pickup surface by the optical unit 1001 into an electric signal in pixel units and outputs it as a pixel signal.
  • the image pickup device 1002 the image pickup device 1 of FIG. 1 can be used.
  • the display unit 1005 is composed of a thin display such as an LCD (Liquid Crystal Display) or an organic EL (Electro Luminescence) display, and displays a moving image or a still image captured by the image pickup element 1002.
  • the recording unit 1006 records a moving image or a still image captured by the image sensor 1002 on a recording medium such as a hard disk or a semiconductor memory.
  • the operation unit 1007 issues operation commands for various functions of the image sensor 1000 under the operation of the user.
  • the power supply unit 1008 appropriately supplies various power sources that serve as operating power sources for the DSP circuit 1003, the frame memory 1004, the display unit 1005, the recording unit 1006, and the operation unit 1007.
  • FIG. 28 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technique according to the present disclosure (the present technique) can be applied.
  • FIG. 28 shows a surgeon (doctor) 11131 performing surgery on patient 11132 on patient bed 11133 using the endoscopic surgery system 11000.
  • the endoscopic surgery system 11000 includes an endoscope 11100, other surgical tools 11110 such as a pneumoperitoneum tube 11111 and an energy treatment tool 11112, and a support arm device 11120 that supports the endoscope 11100.
  • a cart 11200 equipped with various devices for endoscopic surgery.
  • the endoscope 11100 is composed of a lens barrel 11101 in which a region having a predetermined length from the tip is inserted into the body cavity of the patient 11132, and a camera head 11102 connected to the base end of the lens barrel 11101.
  • the endoscope 11100 configured as a so-called rigid mirror having a rigid barrel 11101 is illustrated, but the endoscope 11100 may be configured as a so-called flexible mirror having a flexible barrel. good.
  • An opening in which an objective lens is fitted is provided at the tip of the lens barrel 11101.
  • a light source device 11203 is connected to the endoscope 11100, and the light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extending inside the lens barrel 11101 to be an objective. It is irradiated toward the observation target in the body cavity of the patient 11132 through the lens.
  • the endoscope 11100 may be a direct endoscope, a perspective mirror, or a side endoscope.
  • An optical system and an image pickup element are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is focused on the image pickup element by the optical system.
  • the observation light is photoelectrically converted by the image sensor, and an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image is generated.
  • the image signal is transmitted as RAW data to the camera control unit (CCU: Camera Control Unit) 11201.
  • CCU Camera Control Unit
  • the CCU11201 is composed of a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), etc., and comprehensively controls the operations of the endoscope 11100 and the display device 11202. Further, the CCU 11201 receives an image signal from the camera head 11102, and performs various image processing on the image signal for displaying an image based on the image signal, such as development processing (demosaic processing).
  • a CPU Central Processing Unit
  • GPU Graphics Processing Unit
  • the display device 11202 displays an image based on the image signal processed by the CCU 11201 under the control of the CCU 11201.
  • the light source device 11203 is composed of, for example, a light source such as an LED (light emission diode), and supplies irradiation light to the endoscope 11100 when photographing an operating part or the like.
  • a light source such as an LED (light emission diode)
  • the input device 11204 is an input interface for the endoscopic surgery system 11000.
  • the user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204.
  • the user inputs an instruction to change the imaging conditions (type of irradiation light, magnification, focal length, etc.) by the endoscope 11100.
  • the treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for ablation of tissue, incision, sealing of blood vessels, and the like.
  • the pneumoperitoneum device 11206 uses a gas in the pneumoperitoneum tube 11111 to inflate the body cavity of the patient 11132 for the purpose of securing the field of view by the endoscope 11100 and securing the work space of the operator.
  • the recorder 11207 is a device capable of recording various information related to surgery.
  • the printer 11208 is a device capable of printing various information related to surgery in various formats such as texts, images, and graphs.
  • the light source device 11203 that supplies the irradiation light to the endoscope 11100 when photographing the surgical site can be composed of, for example, an LED, a laser light source, or a white light source composed of a combination thereof.
  • a white light source is configured by combining RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high accuracy. Therefore, the light source device 11203 adjusts the white balance of the captured image. It can be carried out.
  • the laser light from each of the RGB laser light sources is irradiated to the observation target in a time-division manner, and the drive of the image sensor of the camera head 11102 is controlled in synchronization with the irradiation timing to correspond to each of RGB. It is also possible to capture the image in a time-division manner. According to this method, a color image can be obtained without providing a color filter on the image sensor.
  • the drive of the light source device 11203 may be controlled so as to change the intensity of the output light at predetermined time intervals.
  • the drive of the image sensor of the camera head 11102 in synchronization with the timing of changing the light intensity to acquire an image in a time-divided manner and synthesizing the image, so-called high dynamic without blackout and overexposure. Range images can be generated.
  • the light source device 11203 may be configured to be able to supply light in a predetermined wavelength band corresponding to special light observation.
  • special light observation for example, by utilizing the wavelength dependence of light absorption in body tissue to irradiate light in a narrow band as compared with the irradiation light (that is, white light) in normal observation, the surface layer of the mucous membrane. So-called narrow band imaging, in which a predetermined tissue such as a blood vessel is photographed with high contrast, is performed.
  • fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiating with excitation light.
  • the body tissue is irradiated with excitation light to observe the fluorescence from the body tissue (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into the body tissue and the body tissue is injected. It is possible to obtain a fluorescence image by irradiating excitation light corresponding to the fluorescence wavelength of the reagent.
  • the light source device 11203 may be configured to be capable of supplying narrow band light and / or excitation light corresponding to such special light observation.
  • FIG. 29 is a block diagram showing an example of the functional configuration of the camera head 11102 and CCU11201 shown in FIG. 28.
  • the camera head 11102 includes a lens unit 11401, an imaging unit 11402, a driving unit 11403, a communication unit 11404, and a camera head control unit 11405.
  • CCU11201 has a communication unit 11411, an image processing unit 11412, and a control unit 11413.
  • the camera head 11102 and CCU11201 are communicatively connected to each other by a transmission cable 11400.
  • the lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101.
  • the observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and incident on the lens unit 11401.
  • the lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.
  • the image sensor constituting the image pickup unit 11402 may be one (so-called single plate type) or a plurality (so-called multi-plate type).
  • each image pickup element may generate an image signal corresponding to each of RGB, and a color image may be obtained by synthesizing them.
  • the image pickup unit 11402 may be configured to have a pair of image pickup elements for acquiring image signals for the right eye and the left eye corresponding to 3D (dimensional) display, respectively.
  • the 3D display enables the operator 11131 to more accurately grasp the depth of the biological tissue in the surgical site.
  • a plurality of lens units 11401 may be provided corresponding to each image pickup element.
  • the imaging unit 11402 does not necessarily have to be provided on the camera head 11102.
  • the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.
  • the drive unit 11403 is composed of an actuator, and the zoom lens and focus lens of the lens unit 11401 are moved by a predetermined distance along the optical axis under the control of the camera head control unit 11405. As a result, the magnification and focus of the image captured by the imaging unit 11402 can be adjusted as appropriate.
  • the communication unit 11404 is composed of a communication device for transmitting and receiving various information to and from the CCU11201.
  • the communication unit 11404 transmits the image signal obtained from the image pickup unit 11402 as RAW data to the CCU 11201 via the transmission cable 11400.
  • the communication unit 11404 receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405.
  • the control signal includes, for example, information to specify the frame rate of the captured image, information to specify the exposure value at the time of imaging, and / or information to specify the magnification and focus of the captured image, and the like. Contains information about the condition.
  • the imaging conditions such as the frame rate, exposure value, magnification, and focus may be appropriately specified by the user, or may be automatically set by the control unit 11413 of CCU11201 based on the acquired image signal. good.
  • the endoscope 11100 is equipped with a so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function.
  • the camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.
  • the communication unit 11411 is composed of a communication device for transmitting and receiving various information to and from the camera head 11102.
  • the communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.
  • the communication unit 11411 transmits a control signal for controlling the drive of the camera head 11102 to the camera head 11102.
  • Image signals and control signals can be transmitted by telecommunications, optical communication, or the like.
  • the image processing unit 11412 performs various image processing on the image signal which is the RAW data transmitted from the camera head 11102.
  • the control unit 11413 performs various controls related to the imaging of the surgical site and the like by the endoscope 11100 and the display of the captured image obtained by the imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.
  • control unit 11413 causes the display device 11202 to display an image captured by the surgical unit or the like based on the image signal processed by the image processing unit 11412.
  • the control unit 11413 may recognize various objects in the captured image by using various image recognition techniques. For example, the control unit 11413 detects the shape, color, and the like of the edge of an object included in the captured image to remove surgical tools such as forceps, a specific biological part, bleeding, and mist when using the energy treatment tool 11112. Can be recognized.
  • the control unit 11413 may superimpose and display various surgical support information on the image of the surgical unit by using the recognition result. By superimposing and displaying the surgical support information and presenting it to the surgeon 11131, it is possible to reduce the burden on the surgeon 11131 and to allow the surgeon 11131 to proceed with the surgery reliably.
  • the transmission cable 11400 that connects the camera head 11102 and CCU11201 is an electric signal cable that supports electric signal communication, an optical fiber that supports optical communication, or a composite cable thereof.
  • the communication was performed by wire using the transmission cable 11400, but the communication between the camera head 11102 and the CCU11201 may be performed wirelessly.
  • the technology according to the present disclosure can be applied to various products.
  • the technology according to the present disclosure is realized as a device mounted on a moving body of any kind such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility, an airplane, a drone, a ship, and a robot. You may.
  • FIG. 30 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile control system to which the technology according to the present disclosure can be applied.
  • the vehicle control system 12000 includes a plurality of electronic control units connected via the communication network 12001.
  • the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050.
  • a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (Interface) 12053 are shown as a functional configuration of the integrated control unit 12050.
  • the drive system control unit 12010 controls the operation of the device related to the drive system of the vehicle according to various programs.
  • the drive system control unit 12010 provides a driving force generator for generating the driving force of the vehicle such as an internal combustion engine or a driving motor, a driving force transmission mechanism for transmitting the driving force to the wheels, and a steering angle of the vehicle. It functions as a control device such as a steering mechanism for adjusting and a braking device for generating a braking force of a vehicle.
  • the body system control unit 12020 controls the operation of various devices mounted on the vehicle body according to various programs.
  • the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device for various lamps such as headlamps, back lamps, brake lamps, blinkers or fog lamps.
  • the body system control unit 12020 may be input with radio waves transmitted from a portable device that substitutes for the key or signals of various switches.
  • the body system control unit 12020 receives inputs of these radio waves or signals and controls a vehicle door lock device, a power window device, a lamp, and the like.
  • the vehicle outside information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000.
  • the imaging unit 12031 is connected to the vehicle exterior information detection unit 12030.
  • the vehicle outside information detection unit 12030 causes the image pickup unit 12031 to capture an image of the outside of the vehicle and receives the captured image.
  • the vehicle exterior information detection unit 12030 may perform object detection processing or distance detection processing such as a person, a vehicle, an obstacle, a sign, or a character on the road surface based on the received image.
  • the imaging unit 12031 is an optical sensor that receives light and outputs an electric signal according to the amount of the light received.
  • the image pickup unit 12031 can output an electric signal as an image or can output it as distance measurement information. Further, the light received by the imaging unit 12031 may be visible light or invisible light such as infrared light.
  • the in-vehicle information detection unit 12040 detects the in-vehicle information.
  • a driver state detection unit 12041 that detects the driver's state is connected to the vehicle interior information detection unit 12040.
  • the driver state detection unit 12041 includes, for example, a camera that images the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated, or it may be determined whether the driver is dozing.
  • the microcomputer 12051 calculates the control target value of the driving force generator, the steering mechanism, or the braking device based on the information inside and outside the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040, and the drive system control unit.
  • a control command can be output to 12010.
  • the microcomputer 12051 realizes ADAS (Advanced Driver Assistance System) functions including vehicle collision avoidance or impact mitigation, follow-up driving based on inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane deviation warning, and the like. It is possible to perform cooperative control for the purpose of.
  • ADAS Advanced Driver Assistance System
  • the microcomputer 12051 controls the driving force generator, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the vehicle exterior information detection unit 12030 or the vehicle interior information detection unit 12040. It is possible to perform coordinated control for the purpose of automatic driving, etc., which runs autonomously without depending on the operation.
  • the microcomputer 12051 can output a control command to the body system control unit 12030 based on the information outside the vehicle acquired by the vehicle exterior information detection unit 12030.
  • the microcomputer 12051 controls the headlamps according to the position of the preceding vehicle or the oncoming vehicle detected by the external information detection unit 12030, and performs coordinated control for the purpose of anti-glare such as switching the high beam to the low beam. It can be carried out.
  • the audio image output unit 12052 transmits the output signal of at least one of the audio and the image to the output device capable of visually or audibly notifying the passenger or the outside of the vehicle of the information.
  • an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices.
  • the display unit 12062 may include, for example, at least one of an onboard display and a heads-up display.
  • FIG. 31 is a diagram showing an example of the installation position of the imaging unit 12031.
  • the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104, and 12105.
  • the imaging units 12101, 12102, 12103, 12104, 12105 are provided at positions such as, for example, the front nose, side mirrors, rear bumpers, back doors, and the upper part of the windshield in the vehicle interior of the vehicle 12100.
  • the image pickup unit 12101 provided on the front nose and the image pickup section 12105 provided on the upper part of the windshield in the vehicle interior mainly acquire an image in front of the vehicle 12100.
  • the imaging units 12102 and 12103 provided in the side mirrors mainly acquire images of the side of the vehicle 12100.
  • the imaging unit 12104 provided on the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100.
  • the imaging unit 12105 provided on the upper part of the windshield in the vehicle interior is mainly used for detecting a preceding vehicle, a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.
  • FIG. 31 shows an example of the photographing range of the imaging units 12101 to 12104.
  • the imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose
  • the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, respectively
  • the imaging range 12114 indicates the imaging range of the imaging units 12102 and 12103.
  • the imaging range of the imaging unit 12104 provided on the rear bumper or the back door is shown. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 as viewed from above can be obtained.
  • At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information.
  • at least one of the image pickup units 12101 to 12104 may be a stereo camera composed of a plurality of image pickup elements, or may be an image pickup device having pixels for phase difference detection.
  • the microcomputer 12051 has a distance to each three-dimensional object within the imaging range 12111 to 12114 based on the distance information obtained from the imaging units 12101 to 12104, and a temporal change of this distance (relative velocity with respect to the vehicle 12100). By obtaining can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in front of the preceding vehicle in advance, and can perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. In this way, it is possible to perform coordinated control for the purpose of automatic driving or the like in which the vehicle travels autonomously without depending on the operation of the driver.
  • automatic braking control including follow-up stop control
  • automatic acceleration control including follow-up start control
  • the microcomputer 12051 converts three-dimensional object data related to a three-dimensional object into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects based on the distance information obtained from the imaging units 12101 to 12104. It can be classified and extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that can be seen by the driver of the vehicle 12100 and obstacles that are difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the risk of collision with each obstacle, and when the collision risk is equal to or higher than the set value and there is a possibility of collision, the microcomputer 12051 via the audio speaker 12061 or the display unit 12062. By outputting an alarm to the driver and performing forced deceleration and avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be provided.
  • At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays.
  • the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging units 12101 to 12104.
  • pedestrian recognition includes, for example, a procedure for extracting feature points in an image captured by an imaging unit 12101 to 12104 as an infrared camera, and pattern matching processing for a series of feature points indicating the outline of an object to determine whether or not the pedestrian is a pedestrian. It is done by the procedure to determine.
  • the audio image output unit 12052 When the microcomputer 12051 determines that a pedestrian is present in the captured images of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 outputs a square contour line for emphasizing the recognized pedestrian.
  • the display unit 12062 is controlled so as to superimpose and display. Further, the audio image output unit 12052 may control the display unit 12062 so as to display an icon or the like indicating a pedestrian at a desired position.
  • the system represents the entire device composed of a plurality of devices.
  • the present technology can also have the following configurations.
  • a photoelectric conversion unit that generates a pixel signal by photoelectric conversion according to the amount of incident light
  • a lens group composed of a plurality of lenses that focuses the incident light on a light receiving surface in which the plurality of photoelectric conversion units are arranged in an array.
  • An imaging device in which the colors of the color filters arranged on a plurality of adjacent photoelectric conversion units are the same.
  • the imaging device according to (1) further including an on-chip lens for each photoelectric conversion unit.
  • the imaging device according to (1) further comprising an on-chip lens for each of the four 2 ⁇ 2 photoelectric conversion units.
  • the imaging device according to (1) further including an on-chip lens for each of the two photoelectric conversion units adjacent to each other on the top, bottom, left and right.
  • the layer of the color filter includes a light-shielding portion formed of a light-shielding member.
  • the light-shielding unit is also provided between the photoelectric conversion units.
  • the line width of the light-shielding portion between color filters in which different colors are arranged is thicker than the line width of the light-shielding portion between color filters in which the same color is arranged.
  • Imaging device (8) The imaging device according to (5) or (6) above, wherein the light-shielding portion is provided between color filters in which different colors are arranged. (9) The imaging device according to (8) above, further comprising a light-shielding unit formed of a light-shielding member between the photoelectric conversion units.
  • a photoelectric conversion unit that generates a pixel signal by photoelectric conversion according to the amount of incident light
  • a lens group composed of a plurality of lenses that focuses the incident light on a light receiving surface in which the plurality of photoelectric conversion units are arranged in an array.

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JP2017108281A (ja) * 2015-12-09 2017-06-15 株式会社ニコン 撮像素子および撮像装置
DE112019002902T5 (de) * 2018-06-08 2021-04-08 Sony Semiconductor Solutions Corporation Bildgebungsvorrichtung

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JP2014016537A (ja) * 2012-07-10 2014-01-30 Sony Corp 撮像装置
WO2017169479A1 (ja) * 2016-03-31 2017-10-05 株式会社ニコン 撮像素子、及び、撮像装置
WO2019035374A1 (ja) * 2017-08-18 2019-02-21 ソニー株式会社 撮像素子および撮像装置

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