WO2021164010A1 - Array substrate and display panel - Google Patents

Array substrate and display panel Download PDF

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Publication number
WO2021164010A1
WO2021164010A1 PCT/CN2020/076232 CN2020076232W WO2021164010A1 WO 2021164010 A1 WO2021164010 A1 WO 2021164010A1 CN 2020076232 W CN2020076232 W CN 2020076232W WO 2021164010 A1 WO2021164010 A1 WO 2021164010A1
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WIPO (PCT)
Prior art keywords
region
area
sub
gate shift
frame
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PCT/CN2020/076232
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French (fr)
Chinese (zh)
Inventor
魏旃
王世君
冯博
穆文凯
王洋
刘屹
田丽
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2020/076232 priority Critical patent/WO2021164010A1/en
Priority to CN202080000161.4A priority patent/CN113544581A/en
Publication of WO2021164010A1 publication Critical patent/WO2021164010A1/en

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals

Definitions

  • the present disclosure relates to the field of display technology, and in particular to an array substrate and a display panel.
  • the display panel includes a display area and a frame area surrounding the display area, and a gate driving circuit is provided at at least one side of the frame area to provide driving signals to each gate line in the display area.
  • an array substrate which includes: a base substrate having a display area and a frame area surrounding the display area;
  • the frame area includes: a first frame sub-area extending in a first direction, a second frame sub-area extending in a second direction, and connected between the first frame sub-area and the second frame sub-area The arc-shaped sub-area of, wherein the first frame sub-area and the second frame sub-area are arranged adjacently, and the first direction and the second direction are perpendicular to each other;
  • the array substrate includes a plurality of cascaded gate shift registers located in the frame area, and the width of at least one gate shift register located in the arc-shaped sub-region in the second direction is smaller than that located in the second direction.
  • the gate shift registers in the arc-shaped sub-regions have the same size.
  • the gate shift register far from the first frame sub-region is in the second direction
  • the width of is smaller than the width of the gate shift register near the first frame sub-region in the second direction.
  • all the gate shift registers have the same circuit connection structure
  • the length of at least one gate shift register located in the arc-shaped sub-region in the first direction is greater than the gate shift located in the first frame sub-region and the second frame sub-region The length of the register in the first direction.
  • the width of the gate shift register located in the first frame subregion in the second direction is smaller than that of the second The width of the gate shift register in the second direction in the frame sub-region.
  • the length of the gate shift register located in the first frame subregion in the first direction is greater than that of the gate shift register located in the first frame.
  • the gate shift register located in the arc-shaped sub-region and the gate shift register located in the first frame sub-region and the second frame sub-region are different from each other.
  • the circuit connection structure of the gate shift register in the frame sub-region is different;
  • the area occupied by each of the gate shift registers in the arc-shaped sub-region is smaller than the area occupied by each of the gate shift registers in the first frame sub-region and the second frame sub-region.
  • the frame area further includes: a third frame sub-area, and the third frame sub-area extends along the second direction and is incompatible with The second frame sub-regions are relatively arranged;
  • the array substrate further includes a source drive circuit located in the third frame sub-region, and the source drive circuit is electrically connected to a plurality of data lines located in the display area.
  • the frame area further includes: a fourth frame sub-area, and the fourth frame sub-area is arranged opposite to the first frame sub-area ;
  • the fourth frame sub-region includes a plurality of the gate shift registers.
  • the display area includes: a plurality of gate lines, and the gate lines extend along the second direction;
  • the gate shift register in the first frame sub-region and the gate shift register in the fourth frame sub-region are electrically connected to the gate lines in different rows, respectively.
  • embodiments of the present disclosure also provide a display panel, including the array substrate provided in any one of the embodiments of the first aspect, and a plurality of sub-pixels located in the display area.
  • FIG. 1 is a schematic diagram of the structure of an array substrate in the related art
  • FIG. 2 is a schematic structural diagram of an array substrate provided by an embodiment of the disclosure.
  • FIG. 3 is a schematic diagram of a partially enlarged structure provided by an embodiment of the disclosure.
  • FIG. 4 is a schematic structural diagram of a gate shift register in a first frame sub-region or a second frame sub-region provided by an embodiment of the present disclosure
  • FIG. 5 is a schematic structural diagram of a gate shift register in an arc-shaped sub-region provided by an embodiment of the disclosure
  • FIG. 6a and 6b are schematic diagrams of another partially enlarged structure provided by an embodiment of the present disclosure.
  • FIG. 7 is a schematic structural diagram of another array substrate provided by an embodiment of the disclosure.
  • FIG. 8 is a schematic structural diagram of yet another array substrate provided by an embodiment of the disclosure.
  • the array substrate in the related art includes a display area A0 and a frame area B0 surrounding the display area A0.
  • a plurality of cascaded gate shift registers S0 are provided in the frame area B0 to display The corresponding gate line (not specifically shown in the figure) in the area A0 is driven.
  • the gate shift register S0 occupies the area of the display area A0, which reduces the screen-to-body ratio of the array substrate and is not conducive to the realization of a narrow frame.
  • embodiments of the present disclosure provide an array substrate and a display panel.
  • the specific implementations of the array substrate and the display panel provided by the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the preferred embodiments described below are only used to illustrate and explain the present disclosure, and are not used to limit the present disclosure. And if there is no conflict, the embodiments in the application and the features in the embodiments can be combined with each other.
  • an embodiment of the present disclosure provides an array substrate.
  • the array substrate includes: a base substrate having a display area A and a frame area B surrounding the display area A;
  • the frame area B includes: a first frame sub-area B1 extending along the first direction, a second frame sub-area B2 extending along the second direction, and connected between the first frame sub-area B1 and the second frame sub-area B2
  • the array substrate includes a plurality of cascaded gate shift registers S located in the frame area B, and the width W3 of the at least one gate shift register S located in the arc-shaped sub-area B3 in the second direction is smaller than that located in the first The widths W1/W2 of the gate shift register S in the frame sub-region B1 and the second frame sub-region B2 in the second direction.
  • the gate shift register in the arc-shaped sub-region is The width in the second direction is smaller than the width in the second direction of the gate shift register located in the first frame sub-region and the second frame sub-region, thereby reducing the gate shift register occupancy in the arc-shaped sub-region
  • the area of the display area can increase the screen-to-body ratio of the array substrate, and is beneficial to realize a narrow frame design.
  • the length of the gate shift register in the first direction and the width in the second direction refer to the area occupied by the circuit structure of the gate shift register.
  • the gate shift register includes a plurality of electrically connected transistors and capacitors.
  • the shape of the area occupied by these transistors and capacitors is approximately rectangular, and the size of the area occupied by the gate shift register in the arc-shaped sub-region is adjusted. This can be achieved by changing the position and shape of the transistors and capacitors on the base substrate.
  • the connection relationship between the transistors and the capacitors in the arc-shaped sub-regions may not change.
  • the shape of the capacitor can change the size of the area occupied by the gate shift register.
  • FIG. 4 it is a schematic diagram of the structure of the gate shift register in the first frame sub-region or the second frame sub-region. It can be seen from FIG. 4 that a plurality of transistors TFT are located in the same row and are arranged in sequence along the second direction. , And from the structure diagram of the gate shift register in the arc-shaped sub-region shown in FIG. 5, it can be seen that a plurality of transistors TFT are arranged in two rows in the second direction. Therefore, the arc shape can be reduced by this arrangement. The width in the second direction of the area occupied by the transistor TFT in the gate shift register in the sub-area increases its length in the first direction.
  • the shape of the capacitor C in the gate shift register in the first frame sub-region or the second frame sub-region and the capacitor C in the gate shift register in the arc-shaped sub-region are also different.
  • the capacitor C in the gate shift register in the sub-region or the second frame sub-region is rectangular, which increases the width of the gate shift register in the region in the second direction; while the capacitor in the arc-shaped sub-region is L-shaped , So that the width of the gate shift register in this area in the second direction is smaller.
  • the width of the gate shift register in the arc-shaped sub-region in the second direction can be reduced. , But it can also ensure that the capacitance value and the driving ability of the transistor remain unchanged.
  • the gate shift register in the arc-shaped sub-region has a relatively large length in the first direction, the number of gate shift registers that can be contained in the first frame sub-region extending along the first direction is limited. Therefore, part of the gate shift register can be prevented from being located in the second frame sub-area that is adjacent to the first frame sub-area and extends in the second direction.
  • the frame area may include a plurality of arc-shaped sub-regions, and the arc-shaped sub-regions may be at any top corner of the array substrate.
  • the gate shift register is located at the upper right corner.
  • the arc-shaped sub-region of is taken as an example for description.
  • the gate shift register may also be located in arc-shaped sub-regions in other positions, all of which are within the protection scope of the present disclosure. Among them, the position of the top corner of the row of substrates where the arc-shaped sub-region is located depends on the side of the frame area on which the gate shift register is located.
  • the arc-shaped sub-region may be It is located at the upper right corner and/or lower right corner of the array substrate. Of course, this is also related to the location and area occupied by the source drive circuit. If the lower right corner is located, the arc-shaped sub-region is located at the upper right corner of the array substrate. That is, the position of the arc-shaped sub-region needs to be designed in comprehensive consideration of the layout of other circuits in the array substrate.
  • the source driving circuit is located on the lower frame of the array substrate, it is preferable to set the arc-shaped sub-area at the upper right corner and/or the upper left corner.
  • the arc-shaped sub-region can be set at the lower right corner and/or the lower left corner, and can be selected according to the actual situation, which is not specifically limited here.
  • the width of the gate shift register in the arc-shaped sub-region in the second direction is approximately greater than the width of the gate shift register in the first frame sub-region and/or the second frame sub-region in the second direction.
  • Reduce 69.85 about 60% to 80% of the size of a single pixel in the display area
  • the length of the gate shift register in the arc-shaped sub-region in the first direction is longer than that of the first frame sub-region and/or
  • the length of the gate shift register in the second frame subregion in the first direction is increased by approximately 83.3 frames (approximately 80% to 90% of the size of a single pixel).
  • the size of each gate shift register in the arc-shaped sub-region may be the same or different.
  • the width of the gate shift register in the arc-shaped sub-region that is far from the first frame sub-region in the second direction can be smaller than that of the gate shift register that is close to the first frame.
  • the width of the gate shift register of a frame sub-region in the second direction is beneficial to the excessive boundary of the arc-shaped sub-region and reduces the occupied area of the display area.
  • the width of each gate shift register in the arc-shaped sub-region can be gradually changed with the change of the position, of course, it can be changed according to each gate shift register.
  • the width of the two or more gate shift registers in the adjacent position in the second direction is set to be the same.
  • the array substrate includes gate shift registers S1, S2, S3, S4, S5, and S6 in the direction in which the first frame sub-region points to the second frame sub-region, And the width of each gate shift register in the second direction is successively decreasing, that is, W31>W32>W33>W34>W35>W36.
  • the widths of the gate shift register S1 and the gate shift register S2 in the second direction can also be set to W31, and the gate shift register S3 and the gate shift register S4 can be set in the second direction.
  • the widths in the two directions are both set to W32, and the widths of the gate shift register S5 and the gate shift register S6 in the second direction are both set to W33, where W31>W32>W33.
  • how to set the gate shift registers in the arc-shaped sub-regions needs to be selected according to the actual design, which is not specifically limited here.
  • the circuit connection structure of all the gate shift registers S is the same;
  • the length L3 of the at least one gate shift register S located in the arc-shaped sub-region B3 in the first direction is greater than the length L1 and the second gate shift register S located in the first frame sub-region B1 in the first direction.
  • the area occupied by each gate shift register is the same, and the area of each gate shift register can be adjusted by Layout of the device to adjust the length of the gate shift register in each sub-region in the first direction and the width in the second direction.
  • the width of the gate shift register located in the arc-shaped sub-region in the second direction is smaller than the width of the gate shift register located in the first frame sub-region and the second region in the second direction, then
  • the length of the gate shift register located in the arc-shaped sub-region in the first direction needs to be greater than the length of the gate shift register located in the first frame sub-region and the second region in the first direction, so as to ensure that each The gate shift register has a reasonable layout.
  • the same circuit connection structure of the gate shift registers means that the transistors and capacitors included in each gate shift register have the same electrical connection relationship, and their shapes and positions can be different, that is, they can pass through
  • the positions and shapes of the transistors and capacitors in each subregion are designed to change the size of the gate shift register in each subregion in the first direction and in the second direction.
  • the width W1 of the gate shift register S located in the first frame sub-region B1 in the second direction is smaller than that of the second frame sub-region B2 The width W2 of the gate shift register S in the second direction.
  • the width of the first frame sub-region in the second direction should be as small as possible. Therefore, the width of the gate shift register located in the first frame sub-region in the second direction can be smaller than the width of the gate shift register located in the second frame sub-region in the second direction.
  • the narrow border design of the border sub-area since the first frame sub-region extends along the first direction, in order to realize a narrow frame arrangement, the width of the first frame sub-region in the second direction should be as small as possible. Therefore, the width of the gate shift register located in the first frame sub-region in the second direction can be smaller than the width of the gate shift register located in the second frame sub-region in the second direction.
  • the length L1 of the gate shift register S located in the first frame subregion B1 in the first direction is greater than that of the gate shift register S located in the second frame subregion.
  • the width of the second frame sub-region in the first direction should be as small as possible. Therefore, the length of the gate shift register located in the first frame sub-region in the first direction can be greater than the length of the gate shift register located in the second frame sub-region in the first direction.
  • the narrow frame design of the second frame sub-area since the second frame sub-region extends in the second direction, in order to achieve a narrow frame arrangement, the width of the second frame sub-region in the first direction should be as small as possible. Therefore, the length of the gate shift register located in the first frame sub-region in the first direction can be greater than the length of the gate shift register located in the second frame sub-region in the first direction.
  • the gate shift register S located in the arc-shaped sub-region B3 and the gate shift register S located in the first frame sub-region B1 and the second frame sub-region B2 The circuit connection structure of the gate shift register S inside is different;
  • the area occupied by the gate shift registers S in the arc-shaped sub-region B3 is smaller than the area occupied by the gate shift registers S in the first frame sub-region B1 and the second frame sub-region B2.
  • the gate shift register located in the arc-shaped sub-area and the gate shift register located in the first frame sub-area and the second frame sub-area can also be used.
  • the circuit connection structure is different. By designing the connection structure of each device in the gate area circuit in each sub-area, the area occupied by the gate shift register in the arc-shaped sub-area can be reduced, so that the area in the arc-shaped sub-area can be reduced.
  • the width of the gate shift register in the sub-region in the second direction is reduced to reduce the area of the display area occupied by the gate shift register.
  • the different circuit connection structures of the gate shift registers mean that the electrical connection relationship and/or the number of transistors and capacitors included in each gate shift register may be different. For example, in order to reduce the area occupied by the gate shift register in the arc-shaped sub-region, you can choose to use a gate shift register with a smaller number of transistors in the arc-shaped sub-region, and choose to use transistors in other sub-regions. A larger number of gate shift registers.
  • the specific circuit structure of the gate shift register in each sub-region can be different, but there is a cascade relationship between gate shift registers based on different structures, and it is necessary to ensure that gate shift registers of different structures
  • the running sequence meets the requirements of the cascading relationship, and can be specifically designed according to actual needs, which is not specifically limited here.
  • the frame area further includes: a third frame sub-area B4, and the third frame sub-area B4 extends in the second direction and is connected to the second frame.
  • the border sub-region B2 is relatively set;
  • the array substrate further includes a source drive circuit D located in the third frame sub-region B4, and the source drive circuit D is electrically connected to a plurality of data lines (not specifically shown in the figure) located in the display area A.
  • the second frame sub-region and the source driving circuit may be arranged on opposite sides, so that the arrangement of the circuits of each part is more reasonable. If the source driving circuit is arranged in the third frame sub-area, the source driving circuit has already occupied a part of the side width area, and if the arc-shaped sub-area is set to be adjacent to the third frame sub-area, it will increase the wiring difficulty , And it will reduce the signal transmission reliability of each circuit, and it is easy to short-circuit, which affects the normal display. Therefore, by arranging the second frame sub-region and the source driving circuit on opposite sides, each circuit can be laid out more reasonably, so as to increase the signal transmission reliability of each circuit.
  • the frame area B further includes: a fourth frame sub-area B5, and the fourth frame sub-area B5 is disposed opposite to the first frame sub-area B1 ;
  • the fourth frame sub-region B5 includes a plurality of gate shift registers S.
  • the gate shift register in addition to the gate shift register may be arranged in the second frame sub-region, when the number of gate shift registers is large, the gate shift register may also be arranged in the fourth frame area.
  • the gate shift register is provided, that is, the gate shift register is provided at both sides of the frame extending in the first direction, so that the high-pixel display panel can be driven.
  • the display area A includes: a plurality of gate lines G, and the gate lines G extend along the second direction;
  • the gate shift register S in the first frame sub-region B1 and the gate shift register S in the fourth frame sub-region B5 are electrically connected to different rows of gate lines G, respectively.
  • the gate shift registers respectively disposed in the first frame sub-region and the fourth frame sub-region can drive different gate lines, so that more rows can be driven. Pixels, suitable for driving high-pixel display panels. It is also possible to make the gate shift registers located in the first frame sub-region and the fourth frame sub-region to drive the gate lines located in the same row, that is, the double-sided driving method is adopted. The details can be selected according to actual needs, and there is no specific limitation here.
  • embodiments of the present disclosure also provide a display panel, which includes the array substrate provided by any of the above-mentioned embodiments, and a plurality of sub-pixels located in the display area.
  • the array substrate has all the advantages of the array substrate provided by the above-mentioned embodiments. Therefore, implementation can be carried out with reference to the above-mentioned embodiments of the array substrate, which will not be repeated here.
  • embodiments of the present disclosure also provide a display device, which includes the display panel provided in the above-mentioned embodiments, and a protective cover on one side of the light-emitting surface of the display panel.
  • the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and so on.
  • a display function such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and so on.
  • Other indispensable components of the display device are understood by those of ordinary skill in the art, and will not be repeated here, nor should they be used as a limitation to the present disclosure.
  • the implementation of the display device can be referred to the embodiment of the above-mentioned display panel, and the repetition will not be repeated.
  • Embodiments of the present disclosure provide an array substrate and a display panel.
  • the array substrate includes a base substrate, the base substrate includes a display area and a frame area surrounding the display area; the frame area includes: a first frame sub-area extending in a first direction , A second frame sub-area extending along the second direction, and an arc-shaped sub-area connected between the first frame sub-area and the second frame sub-area, wherein the first frame sub-area is adjacent to the second frame sub-area
  • the first direction and the second direction are perpendicular to each other;
  • the array substrate includes a plurality of cascaded gate shift registers located in the frame area, and at least one gate shift register located in the arc-shaped sub-region is in the second direction
  • the width of is smaller than the width in the second direction of the gate shift register located in the first frame sub-region and the second frame sub-region.
  • the width of the gate shift register in the arc-shaped sub-region in the second direction is smaller than that of the gate shift register in the first frame. Area and the width of the gate shift register in the second frame sub-area in the second direction, thereby reducing the area of the display area occupied by the gate shift register in the arc-shaped sub-area. Increasing the screen-to-body ratio of the array substrate is conducive to the realization of a narrow frame design.

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Abstract

Disclosed are an array substrate and a display panel. The array substrate comprises: a base substrate, the base substrate comprising a display region and a frame region surrounding the display region; the frame region comprises: a first frame sub-region extending along a first direction, a second frame sub-region extending along a second direction, and an arc-shaped sub-region connected between the first frame sub-region and the second frame sub-region, wherein the first frame sub-region and the second frame sub-region are adjacently arranged, and the first direction is perpendicular to the second direction. The array substrate comprises a plurality of cascaded gate shift registers located in the frame region, and the width, in the second direction, of at least one gate shift register located in the arc-shaped sub-region is less than the width, in the second direction, of the gate shift registers located in the first frame sub-region and the second frame sub-region, reducing the display region area occupied by the gate shift registers located in the arc-shaped sub-region, and increasing the screen-to-body ratio of the array substrate.

Description

阵列基板及显示面板Array substrate and display panel 技术领域Technical field
本公开涉及显示技术领域,尤其涉及阵列基板及显示面板。The present disclosure relates to the field of display technology, and in particular to an array substrate and a display panel.
背景技术Background technique
相关技术中,显示面板包括:显示区域以及围绕该显示区域的边框区域,在至少一侧边框区域处设置有栅极驱动电路,以向显示区域内的各栅线提供驱动信号。In the related art, the display panel includes a display area and a frame area surrounding the display area, and a gate driving circuit is provided at at least one side of the frame area to provide driving signals to each gate line in the display area.
发明内容Summary of the invention
第一方面,本公开实施例提供了阵列基板,其中,包括:衬底基板,所述衬底基板具有显示区域以及围绕所述显示区域的边框区域;In a first aspect, embodiments of the present disclosure provide an array substrate, which includes: a base substrate having a display area and a frame area surrounding the display area;
所述边框区域包括:沿第一方向延伸的第一边框子区域,沿第二方向延伸的第二边框子区域,以及连接于所述第一边框子区域与所述第二边框子区域之间的弧形子区域,其中,所述第一边框子区域与所述第二边框子区域相邻设置,所述第一方向与所述第二方向相互垂直;The frame area includes: a first frame sub-area extending in a first direction, a second frame sub-area extending in a second direction, and connected between the first frame sub-area and the second frame sub-area The arc-shaped sub-area of, wherein the first frame sub-area and the second frame sub-area are arranged adjacently, and the first direction and the second direction are perpendicular to each other;
所述阵列基板包括位于所述边框区域的多个级联的栅极移位寄存器,且位于所述弧形子区域内的至少一个栅极移位寄存器在所述第二方向上的宽度小于位于所述第一边框子区域和所述第二边框子区域内的所述栅极移位寄存器在所述第二方向上的宽度。The array substrate includes a plurality of cascaded gate shift registers located in the frame area, and the width of at least one gate shift register located in the arc-shaped sub-region in the second direction is smaller than that located in the second direction. The width in the second direction of the gate shift register in the first frame sub-region and the second frame sub-region.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,所述弧形子区域内的各所述栅极移位寄存器的尺寸相同。In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, the gate shift registers in the arc-shaped sub-regions have the same size.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,在所述弧形子区域内,远离所述第一边框子区域的栅极移位寄存器在所述第二方向上的宽度小于靠近所述第一边框子区域的栅极移位寄存器在所述第二方向上的宽度。In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, in the arc-shaped sub-region, the gate shift register far from the first frame sub-region is in the second direction The width of is smaller than the width of the gate shift register near the first frame sub-region in the second direction.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,所有所述栅极移位寄存器的电路连接结构相同;In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, all the gate shift registers have the same circuit connection structure;
位于所述弧形子区域内的至少一个栅极移位寄存器在所述第一方向上的长度大于位于所述第一边框子区域和所述第二边框子区域内的所述栅极移位寄存器在所述第一方向上的长度。The length of at least one gate shift register located in the arc-shaped sub-region in the first direction is greater than the gate shift located in the first frame sub-region and the second frame sub-region The length of the register in the first direction.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,位于所述第一边框子区域内的所述栅极移位寄存器在所述第二方向的宽度小于所述第二边框子区域内的所述栅极移位寄存器在所述第二方向的宽度。In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, the width of the gate shift register located in the first frame subregion in the second direction is smaller than that of the second The width of the gate shift register in the second direction in the frame sub-region.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,位于所述第一边框子区域内的所述栅极移位寄存器在所述第一方向的长度大于位于所述第二边框子区域内的所述栅极移位寄存器在所述第一方向的长度。In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, the length of the gate shift register located in the first frame subregion in the first direction is greater than that of the gate shift register located in the first frame. The length of the gate shift register in the first direction in the sub-region of the second frame.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,位于所述弧形子区域内的所述栅极移位寄存器与位于所述第一边框子区域和所述第二边框子区域内的所述栅极移位寄存器的电路连接结构不同;In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, the gate shift register located in the arc-shaped sub-region and the gate shift register located in the first frame sub-region and the second frame sub-region are different from each other. The circuit connection structure of the gate shift register in the frame sub-region is different;
所述弧形子区域内的各所述栅极移位寄存器所占面积小于所述第一边框子区域和所述第二边框子区域内的各所述栅极移位寄存器所占面积。The area occupied by each of the gate shift registers in the arc-shaped sub-region is smaller than the area occupied by each of the gate shift registers in the first frame sub-region and the second frame sub-region.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,所述边框区域还包括:第三边框子区域,所述第三边框子区域沿所述第二方向延伸,且与所述第二边框子区域相对设置;In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, the frame area further includes: a third frame sub-area, and the third frame sub-area extends along the second direction and is incompatible with The second frame sub-regions are relatively arranged;
所述阵列基板还包括位于所述第三边框子区域内的源极驱动电路,所述源极驱动电路与位于所述显示区域内的多条数据线电连接。The array substrate further includes a source drive circuit located in the third frame sub-region, and the source drive circuit is electrically connected to a plurality of data lines located in the display area.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,所述边框区域还包括:第四边框子区域,所述第四边框子区域与所述第一边框子区域相对设置;In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, the frame area further includes: a fourth frame sub-area, and the fourth frame sub-area is arranged opposite to the first frame sub-area ;
所述第四边框子区域包括多个所述栅极移位寄存器。The fourth frame sub-region includes a plurality of the gate shift registers.
在一种可能的实施方式中,在本公开实施例提供的阵列基板中,所述显示区域包括:多条栅线,所述栅线沿所述第二方向延伸;In a possible implementation manner, in the array substrate provided by the embodiment of the present disclosure, the display area includes: a plurality of gate lines, and the gate lines extend along the second direction;
所述第一边框子区域内的所述栅极移位寄存器与所述第四边框子区域内的所述栅极移位寄存器分别与不同行所述栅线电连接。The gate shift register in the first frame sub-region and the gate shift register in the fourth frame sub-region are electrically connected to the gate lines in different rows, respectively.
第二方面,本公开实施例还提供了显示面板,包括第一方面任一实施例提供的阵列基板,以及位于所述显示区域内的多个子像素。In a second aspect, embodiments of the present disclosure also provide a display panel, including the array substrate provided in any one of the embodiments of the first aspect, and a plurality of sub-pixels located in the display area.
附图说明Description of the drawings
图1为相关技术中的阵列基板的结构示意图;FIG. 1 is a schematic diagram of the structure of an array substrate in the related art;
图2为本公开实施例提供的一种阵列基板的结构示意图;2 is a schematic structural diagram of an array substrate provided by an embodiment of the disclosure;
图3为本公开实施例提供的局部放大结构示意图;FIG. 3 is a schematic diagram of a partially enlarged structure provided by an embodiment of the disclosure;
图4为本公开实施例提供的第一边框子区域或第二边框子区域内的栅极移位寄存器的结构示意图;4 is a schematic structural diagram of a gate shift register in a first frame sub-region or a second frame sub-region provided by an embodiment of the present disclosure;
图5为本公开实施例提供的弧形子区域内的栅极移位寄存器的结构示意图;5 is a schematic structural diagram of a gate shift register in an arc-shaped sub-region provided by an embodiment of the disclosure;
图6a和图6b为本公开实施例提供的另一种局部放大结构示意图;6a and 6b are schematic diagrams of another partially enlarged structure provided by an embodiment of the present disclosure;
图7为本公开实施例提供的另一种阵列基板的结构示意图;FIG. 7 is a schematic structural diagram of another array substrate provided by an embodiment of the disclosure;
图8为本公开实施例提供的又一种阵列基板的结构示意图。FIG. 8 is a schematic structural diagram of yet another array substrate provided by an embodiment of the disclosure.
具体实施方式Detailed ways
相关技术中的阵列基板,如图1所示,包括显示区域A0,以及围绕该显示区域A0的边框区域B0,在边框区域B0设置有多个级联的栅极移位寄存器S0,分别对显示区域A0内对应的栅线(在图中未具体示出)进行驱动。但是,基于边框区域B0存在倒角区域(虚线框中的区域)的设计,由于边框区域B0的外边框形状的限制,在该倒角区域处设置栅极移位寄存器S0时,该栅极移位寄存器S0会占用显示区域A0的面积,从而使得该阵列基板的屏占比减小,且不利于窄边框的实现。The array substrate in the related art, as shown in FIG. 1, includes a display area A0 and a frame area B0 surrounding the display area A0. A plurality of cascaded gate shift registers S0 are provided in the frame area B0 to display The corresponding gate line (not specifically shown in the figure) in the area A0 is driven. However, based on the design of a chamfered area (area in the dashed line frame) in the frame area B0, due to the limitation of the outer frame shape of the frame area B0, when the gate shift register S0 is provided in the chamfered area, the gate shifts The bit register S0 occupies the area of the display area A0, which reduces the screen-to-body ratio of the array substrate and is not conducive to the realization of a narrow frame.
基于相关技术中的阵列基板存在的上述问题,本公开实施例提供了阵列基板及显示面板。为了使本公开的目的,技术方案和优点更加清楚,下面结 合附图,对本公开实施例提供的阵列基板及显示面板的具体实施方式进行详细地说明。应当理解,下面所描述的优选实施例仅用于说明和解释本公开,并不用于限定本公开。并且在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互组合。Based on the above-mentioned problems existing in the array substrate in the related art, embodiments of the present disclosure provide an array substrate and a display panel. In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the specific implementations of the array substrate and the display panel provided by the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the preferred embodiments described below are only used to illustrate and explain the present disclosure, and are not used to limit the present disclosure. And if there is no conflict, the embodiments in the application and the features in the embodiments can be combined with each other.
除非另外定义,本公开使用的技术用语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性,而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同,而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系,当被描述对象的绝对位置改变后,则该相对位置关系也可能相应地改变。Unless otherwise defined, the technical terms or scientific terms used in the present disclosure shall have the usual meanings understood by those with ordinary skills in the field to which this disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity, or importance, but are only used to distinguish different components. "Include" or "include" and other similar words mean that the element or item appearing before the word covers the elements or items listed after the word and their equivalents, but does not exclude other elements or items. Similar words such as "connected" or "connected" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "Up", "Down", "Left", "Right", etc. are only used to indicate the relative position relationship. When the absolute position of the described object changes, the relative position relationship may also change accordingly.
附图中各部件的形状和大小不反应真实比例,目的只是示意说明本公开内容。The shapes and sizes of the components in the drawings do not reflect the true proportions, and are only intended to illustrate the present disclosure.
具体地,本公开实施例提供了阵列基板,如图2和图3所示,该阵列基板包括:衬底基板,该衬底基板具有显示区域A以及围绕该显示区域A的边框区域B;Specifically, an embodiment of the present disclosure provides an array substrate. As shown in FIGS. 2 and 3, the array substrate includes: a base substrate having a display area A and a frame area B surrounding the display area A;
该边框区域B包括:沿第一方向延伸的第一边框子区域B1,沿第二方向延伸的第二边框子区域B2,以及连接于第一边框子区域B1与第二边框子区域B2之间的弧形子区域B3,其中,第一边框子区域B1与所述第二边框子区域B2相邻设置,第一方向与第二方向相互垂直;The frame area B includes: a first frame sub-area B1 extending along the first direction, a second frame sub-area B2 extending along the second direction, and connected between the first frame sub-area B1 and the second frame sub-area B2 The arc-shaped sub-area B3 of, wherein the first frame sub-area B1 and the second frame sub-area B2 are arranged adjacently, and the first direction and the second direction are perpendicular to each other;
该阵列基板包括位于边框区域B的多个级联的栅极移位寄存器S,且位于弧形子区域B3内的至少一个栅极移位寄存器S在第二方向上的宽度W3小于位于第一边框子区域B1和第二边框子区域B2内的栅极移位寄存器S在第二方向上的宽度W1/W2。The array substrate includes a plurality of cascaded gate shift registers S located in the frame area B, and the width W3 of the at least one gate shift register S located in the arc-shaped sub-area B3 in the second direction is smaller than that located in the first The widths W1/W2 of the gate shift register S in the frame sub-region B1 and the second frame sub-region B2 in the second direction.
具体地,在本公开实施例提供的阵列基板中,通过对弧形子区域内的各 子区域的栅极移位寄存器的尺寸进行设计,即使得弧形子区域内的栅极移位寄存器在第二方向上的宽度小于位于第一边框子区域和第二边框子区域内的栅极移位寄存器在第二方向上的宽度,从而减少了位于弧形子区域内的栅极移位寄存器占用显示区域的面积,可以增加该阵列基板的屏占比,并且有利于实现窄边框设计。Specifically, in the array substrate provided by the embodiment of the present disclosure, by designing the size of the gate shift register of each sub-region in the arc-shaped sub-region, the gate shift register in the arc-shaped sub-region is The width in the second direction is smaller than the width in the second direction of the gate shift register located in the first frame sub-region and the second frame sub-region, thereby reducing the gate shift register occupancy in the arc-shaped sub-region The area of the display area can increase the screen-to-body ratio of the array substrate, and is beneficial to realize a narrow frame design.
需要说明的是,在本公开实施例提供的阵列基板中,栅极移位寄存器在第一方向上的长度和在第二方向上的宽度是指栅极移位寄存器电路结构部分所占区域在第一方向上的长度和在第二方向上的宽度。其中,栅极移位寄存器包括多个电连接的晶体管和电容,这些晶体管和电容所占区域的形状近似为矩形,在对弧形子区域内的栅极移位寄存器所占区域的尺寸进行调节时,可以通过改变各晶体管和电容在衬底基板上的位置及形状来实现的,其中,弧形子区域内的各晶体管和电容的连接关系可以不发生变化,通过改变晶体管所在的位置和/电容的形状即可改变栅极移位寄存器所占区域的尺寸。It should be noted that, in the array substrate provided by the embodiment of the present disclosure, the length of the gate shift register in the first direction and the width in the second direction refer to the area occupied by the circuit structure of the gate shift register. The length in the first direction and the width in the second direction. Among them, the gate shift register includes a plurality of electrically connected transistors and capacitors. The shape of the area occupied by these transistors and capacitors is approximately rectangular, and the size of the area occupied by the gate shift register in the arc-shaped sub-region is adjusted. This can be achieved by changing the position and shape of the transistors and capacitors on the base substrate. Among them, the connection relationship between the transistors and the capacitors in the arc-shaped sub-regions may not change. By changing the position and/or of the transistors The shape of the capacitor can change the size of the area occupied by the gate shift register.
如图4所示,为第一边框子区域或第二边框子区域内的栅极移位寄存器的结构示意图,由图4可知,多个晶体管TFT均位于同一行,且沿第二方向依次排列,而由图5示出的弧形子区域内的栅极移位寄存器的结构示意图可知,多个晶体管TFT分别在第二方向上呈两行排列,因此,通过该种设置可以减小弧形子区域内栅极移位寄存器中的晶体管TFT所占区域在第二方向上的宽度,增加其在第一方向上的长度。除此之外,第一边框子区域或第二边框子区域内的栅极移位寄存器中电容C与弧形子区域内栅极移位寄存器中的电容C的形状也是不同的,第一边框子区域或第二边框子区域内的栅极移位寄存器中电容C呈矩形,增加了该区域内栅极移位寄存器在第二方向上的宽度;而弧形子区域内的电容呈L型,使得该区域内的栅极移位寄存器在第二方向上的宽度较小。其中,通过改变栅极移位寄存器中电容C的形状,以及某一个或几个晶体管TFT的形状和位置,可以实现减小弧形子区域内的栅极移位寄存器在第二方向上的宽度,但同时也能够保证电容值和晶体管的驱动能力不变。As shown in FIG. 4, it is a schematic diagram of the structure of the gate shift register in the first frame sub-region or the second frame sub-region. It can be seen from FIG. 4 that a plurality of transistors TFT are located in the same row and are arranged in sequence along the second direction. , And from the structure diagram of the gate shift register in the arc-shaped sub-region shown in FIG. 5, it can be seen that a plurality of transistors TFT are arranged in two rows in the second direction. Therefore, the arc shape can be reduced by this arrangement. The width in the second direction of the area occupied by the transistor TFT in the gate shift register in the sub-area increases its length in the first direction. In addition, the shape of the capacitor C in the gate shift register in the first frame sub-region or the second frame sub-region and the capacitor C in the gate shift register in the arc-shaped sub-region are also different. The capacitor C in the gate shift register in the sub-region or the second frame sub-region is rectangular, which increases the width of the gate shift register in the region in the second direction; while the capacitor in the arc-shaped sub-region is L-shaped , So that the width of the gate shift register in this area in the second direction is smaller. Among them, by changing the shape of the capacitor C in the gate shift register, and the shape and position of one or several transistors TFT, the width of the gate shift register in the arc-shaped sub-region in the second direction can be reduced. , But it can also ensure that the capacitance value and the driving ability of the transistor remain unchanged.
其中,由于弧形子区域内的栅极移位寄存器在第一方向上的长度较大, 因此,沿第一方向延伸的第一边框子区域能够盛放的栅极移位寄存器的数量有限,因此可以将部分栅极移位寄存器防止在于第一边框子区域紧邻的沿第二方向延伸的第二边框子区域内。Wherein, since the gate shift register in the arc-shaped sub-region has a relatively large length in the first direction, the number of gate shift registers that can be contained in the first frame sub-region extending along the first direction is limited. Therefore, part of the gate shift register can be prevented from being located in the second frame sub-area that is adjacent to the first frame sub-area and extends in the second direction.
需要说明的是,该边框区域可以包括多个弧形子区域,该弧形子区域可以为阵列基板的任一顶角的位置处,其中,图2是以栅极移位寄存器位于右上角处的弧形子区域为例进行说明的,当然,该栅极移位寄存器还可以位于其他位置的弧形子区域,均在本公开的保护范围内。其中,该弧形子区域位于这列基板的哪个顶角的位置,一方面取决于栅极移位寄存器位于哪一侧的边框区域,如位于显示区域的右侧,则该弧形子区域可能位于阵列基板的右上角和/或右下角,当然这还与源极驱动电路设置的位置和所占区域相关,如阵列基板的下侧边框设置有源极驱动电路,且该源极驱动电路占据了右下角的位置,则该弧形子区域则位于阵列基板的右上角的位置。即该弧形子区域的位置需要综合考虑阵列基板中其他电路的布局进行设计。当源极驱动电路位于阵列基板的下边框时,优选地将弧形子区域设置在右上角和/或左上角的位置,当然,在源极驱动电路未占用右下角和左下角区域时,也可将弧形子区域设置在右下角和/或左下角的位置,可根据实际情况进行选择,在此不作具体限定。It should be noted that the frame area may include a plurality of arc-shaped sub-regions, and the arc-shaped sub-regions may be at any top corner of the array substrate. In FIG. 2, the gate shift register is located at the upper right corner. The arc-shaped sub-region of is taken as an example for description. Of course, the gate shift register may also be located in arc-shaped sub-regions in other positions, all of which are within the protection scope of the present disclosure. Among them, the position of the top corner of the row of substrates where the arc-shaped sub-region is located depends on the side of the frame area on which the gate shift register is located. If it is located on the right side of the display area, the arc-shaped sub-region may be It is located at the upper right corner and/or lower right corner of the array substrate. Of course, this is also related to the location and area occupied by the source drive circuit. If the lower right corner is located, the arc-shaped sub-region is located at the upper right corner of the array substrate. That is, the position of the arc-shaped sub-region needs to be designed in comprehensive consideration of the layout of other circuits in the array substrate. When the source driving circuit is located on the lower frame of the array substrate, it is preferable to set the arc-shaped sub-area at the upper right corner and/or the upper left corner. Of course, when the source driving circuit does not occupy the lower right corner and the lower left corner area, it is also The arc-shaped sub-region can be set at the lower right corner and/or the lower left corner, and can be selected according to the actual situation, which is not specifically limited here.
其中,弧形子区域内的栅极移位寄存器在第二方向上的宽度较第一边框子区域和/或第二边框子区内的栅极移位寄存器的在第二方向上的宽度约减小69.85上的(约为显示区域内的单个像素尺寸的60%~80%),弧形子区域内的栅极移位寄存器在第一方向上的长度较第一边框子区域和/或第二边框子区内的栅极移位寄存器的在第一方向上的长度约增加83.3框子(约为单个像素尺寸的80%~90%)。Wherein, the width of the gate shift register in the arc-shaped sub-region in the second direction is approximately greater than the width of the gate shift register in the first frame sub-region and/or the second frame sub-region in the second direction. Reduce 69.85 (about 60% to 80% of the size of a single pixel in the display area), the length of the gate shift register in the arc-shaped sub-region in the first direction is longer than that of the first frame sub-region and/or The length of the gate shift register in the second frame subregion in the first direction is increased by approximately 83.3 frames (approximately 80% to 90% of the size of a single pixel).
可选地,在本公开实施例提供的阵列基板中,弧形子区域内的各栅极移位寄存器的尺寸可以相同,也可以不同。在弧形子区域内的各栅极移位寄存器的尺寸不同时,可以使在该弧形子区域内,远离第一边框子区域的栅极移位寄存器在第二方向上的宽度小于靠近第一边框子区域的栅极移位寄存器在 所述第二方向上的宽度。该种设置有利于弧形子区域的边界的过度,减少占用显示区域的面积。Optionally, in the array substrate provided by the embodiment of the present disclosure, the size of each gate shift register in the arc-shaped sub-region may be the same or different. When the sizes of the gate shift registers in the arc-shaped sub-region are different, the width of the gate shift register in the arc-shaped sub-region that is far from the first frame sub-region in the second direction can be smaller than that of the gate shift register that is close to the first frame. The width of the gate shift register of a frame sub-region in the second direction. This setting is beneficial to the excessive boundary of the arc-shaped sub-region and reduces the occupied area of the display area.
具体地,在本公开实施例提供的阵列基板中,弧形子区域内的各栅极移位寄存器的宽度可以是随着所处位置的变化逐渐进行变化,当然可以根据各栅极移位寄存器所处的位置,将临近位置两个或多个栅极移位寄存器在第二方向上的宽度设置为相同。如图6a所示,在弧形子区域内,在第一边框子区域指向第二边框子区域的方向上,该阵列基板包括栅极移位寄存器S1、S2、S3、S4、S5和S6,并且各栅极移位寄存器在第二方向上的宽度是依次递减的,即W31﹥W32﹥W33﹥W34﹥W35﹥W36。如图6b所示,也可以将栅极移位寄存器S1和栅极移位寄存器S2在第二方向上的宽度均设置为W31,将栅极移位寄存器S3和栅极移位寄存器S4在第二方向上的宽度均设置为W32,将栅极移位寄存器S5和栅极移位寄存器S6在第二方向上的宽度均设置为W33,其中,W31﹥W32﹥W33。当然,具体如何对弧形子区域内的各栅极移位寄存器进行设置,还需根据实际设计进行选择,在此不作具体限定。Specifically, in the array substrate provided by the embodiment of the present disclosure, the width of each gate shift register in the arc-shaped sub-region can be gradually changed with the change of the position, of course, it can be changed according to each gate shift register. In the position, the width of the two or more gate shift registers in the adjacent position in the second direction is set to be the same. As shown in FIG. 6a, in the arc-shaped sub-region, the array substrate includes gate shift registers S1, S2, S3, S4, S5, and S6 in the direction in which the first frame sub-region points to the second frame sub-region, And the width of each gate shift register in the second direction is successively decreasing, that is, W31﹥W32﹥W33﹥W34﹥W35﹥W36. As shown in Figure 6b, the widths of the gate shift register S1 and the gate shift register S2 in the second direction can also be set to W31, and the gate shift register S3 and the gate shift register S4 can be set in the second direction. The widths in the two directions are both set to W32, and the widths of the gate shift register S5 and the gate shift register S6 in the second direction are both set to W33, where W31﹥W32﹥W33. Of course, how to set the gate shift registers in the arc-shaped sub-regions needs to be selected according to the actual design, which is not specifically limited here.
可选地,在本公开实施例提供的阵列基板中,如图3所示,所有栅极移位寄存器S的电路连接结构相同;Optionally, in the array substrate provided by the embodiment of the present disclosure, as shown in FIG. 3, the circuit connection structure of all the gate shift registers S is the same;
位于弧形子区域B3内的至少一个栅极移位寄存器S在第一方向上的长度L3大于位于第一边框子区域B1的栅极移位寄存器S在第一方向上的长度L1和第二区域B2的栅极移位寄存器S在第一方向上的长度L2。The length L3 of the at least one gate shift register S located in the arc-shaped sub-region B3 in the first direction is greater than the length L1 and the second gate shift register S located in the first frame sub-region B1 in the first direction. The length L2 of the gate shift register S of the region B2 in the first direction.
具体地,在本公开实施例提供的阵列基板中,在所有栅极移位寄存器的电路连接结构相同时,各栅极移位寄存器所占的面积相同,可以通过调节各栅极移位寄存器中的器件布局,来调整各子区域内的栅极移位寄存器在第一方向上的长度和在第二方向上的宽度。如,在位于弧形子区域内的栅极移位寄存器在第二方向上的宽度小于位于第一边框子区域和第二区域内的栅极移位寄存器在第二方向上的宽度时,就需要使得位于弧形子区域内的栅极移位寄存器在第一方向上的长度大于位于第一边框子区域和第二区域的栅极移位寄存器在第一方向上的长度,以保证对各栅极移位寄存器进行合理的布局。Specifically, in the array substrate provided by the embodiment of the present disclosure, when the circuit connection structure of all the gate shift registers is the same, the area occupied by each gate shift register is the same, and the area of each gate shift register can be adjusted by Layout of the device to adjust the length of the gate shift register in each sub-region in the first direction and the width in the second direction. For example, when the width of the gate shift register located in the arc-shaped sub-region in the second direction is smaller than the width of the gate shift register located in the first frame sub-region and the second region in the second direction, then The length of the gate shift register located in the arc-shaped sub-region in the first direction needs to be greater than the length of the gate shift register located in the first frame sub-region and the second region in the first direction, so as to ensure that each The gate shift register has a reasonable layout.
其中,所述栅极移位寄存器的电路连接结构相同指的是,各栅极移位寄存器中所包含的晶体管和电容的电连接关系相同,其形状和所处的位置可以不同,即可以通过对各子区域内的晶体管和电容的位置及形状进行设计,来改变各子区域内栅极移位寄存器在第一方向上和在第二方向上的尺寸。Wherein, the same circuit connection structure of the gate shift registers means that the transistors and capacitors included in each gate shift register have the same electrical connection relationship, and their shapes and positions can be different, that is, they can pass through The positions and shapes of the transistors and capacitors in each subregion are designed to change the size of the gate shift register in each subregion in the first direction and in the second direction.
可选地,在本公开实施例提供的阵列基板中,如图3所示,位于第一边框子区域B1内的栅极移位寄存器S在第二方向的宽度W1小于第二边框子区域B2内的栅极移位寄存器S在第二方向的宽度W2。Optionally, in the array substrate provided by the embodiment of the present disclosure, as shown in FIG. 3, the width W1 of the gate shift register S located in the first frame sub-region B1 in the second direction is smaller than that of the second frame sub-region B2 The width W2 of the gate shift register S in the second direction.
具体地,在本公开实施例提供的阵列基板中,由于第一边框子区域沿第一方向延伸,为实现窄边框设置,该第一边框子区域在第二方向上的宽度是越小越好,因此,可以通过使位于第一边框子区域内的栅极移位寄存器在第二方向的宽度小于第二边框子区域内的栅极移位寄存器在第二方向的宽度,来实现沿第一边框子区域的窄边框设计。Specifically, in the array substrate provided by the embodiment of the present disclosure, since the first frame sub-region extends along the first direction, in order to realize a narrow frame arrangement, the width of the first frame sub-region in the second direction should be as small as possible. Therefore, the width of the gate shift register located in the first frame sub-region in the second direction can be smaller than the width of the gate shift register located in the second frame sub-region in the second direction. The narrow border design of the border sub-area.
可选地,在本公开实施例提供的阵列基板中,如图3所示,位于第一边框子区域B1内的栅极移位寄存器S在第一方向的长度L1大于位于第二边框子区域B2内的栅极移位寄存器S在第一方向的长度L2。Optionally, in the array substrate provided by the embodiment of the present disclosure, as shown in FIG. 3, the length L1 of the gate shift register S located in the first frame subregion B1 in the first direction is greater than that of the gate shift register S located in the second frame subregion. The length L2 of the gate shift register S in the first direction in B2.
具体地,在本公开实施例提供的阵列基板中,由于第二边框子区域沿第二方向延伸,为实现窄边框设置,该第二边框子区域在第一方向上的宽度是越小越好,因此,可以通过使位于第一边框子区域内的栅极移位寄存器在第一方向的长度大于位于第二边框子区域内的栅极移位寄存器在第一方向的长度,来实现沿第二边框子区域的窄边框设计。Specifically, in the array substrate provided by the embodiment of the present disclosure, since the second frame sub-region extends in the second direction, in order to achieve a narrow frame arrangement, the width of the second frame sub-region in the first direction should be as small as possible. Therefore, the length of the gate shift register located in the first frame sub-region in the first direction can be greater than the length of the gate shift register located in the second frame sub-region in the first direction. The narrow frame design of the second frame sub-area.
可选地,在本公开实施例提供的阵列基板中,如图3所示,位于弧形子区域B3内的栅极移位寄存器S与位于第一边框子区域B1和第二边框子区域B2内的栅极移位寄存器S的电路连接结构不同;Optionally, in the array substrate provided by the embodiment of the present disclosure, as shown in FIG. 3, the gate shift register S located in the arc-shaped sub-region B3 and the gate shift register S located in the first frame sub-region B1 and the second frame sub-region B2 The circuit connection structure of the gate shift register S inside is different;
该弧形子区域B3内的各栅极移位寄存器S所占面积小于第一边框子区域B1和第二边框子区域B2内的各栅极移位寄存器S所占面积。The area occupied by the gate shift registers S in the arc-shaped sub-region B3 is smaller than the area occupied by the gate shift registers S in the first frame sub-region B1 and the second frame sub-region B2.
具体地,在本公开实施例提供的阵列基板中,还可以使位于弧形子区域内的栅极移位寄存器与位于第一边框子区域和第二边框子区域内的栅极移位 寄存器的电路连接结构不同,通过对各子区域内的栅极区域电路内各器件的连接结构进行设计,来减小弧形子区域内的栅极移位寄存器所占的面积,从而可以使位于弧形子区域内的栅极移位寄存器在第二方向上的宽度减小,以减小栅极移位寄存器所占显示区域的面积。Specifically, in the array substrate provided by the embodiment of the present disclosure, the gate shift register located in the arc-shaped sub-area and the gate shift register located in the first frame sub-area and the second frame sub-area can also be used. The circuit connection structure is different. By designing the connection structure of each device in the gate area circuit in each sub-area, the area occupied by the gate shift register in the arc-shaped sub-area can be reduced, so that the area in the arc-shaped sub-area can be reduced. The width of the gate shift register in the sub-region in the second direction is reduced to reduce the area of the display area occupied by the gate shift register.
其中,所述栅极移位寄存器的电路连接结构不同指的是,各栅极移位寄存器中所包含的晶体管和电容的电连接关系和/或数量可以不同。如为了减小弧形子区域内的栅极移位寄存器所占的面积,可以在弧形子区域内选择使用晶体管个数较少的栅极移位寄存器,在其他子区域内选择使用晶体管个数较多的栅极移位寄存器。The different circuit connection structures of the gate shift registers mean that the electrical connection relationship and/or the number of transistors and capacitors included in each gate shift register may be different. For example, in order to reduce the area occupied by the gate shift register in the arc-shaped sub-region, you can choose to use a gate shift register with a smaller number of transistors in the arc-shaped sub-region, and choose to use transistors in other sub-regions. A larger number of gate shift registers.
需要说明的是,各子区域内的栅极移位寄存器的具体电路结构可以不同,但是,基于不同结构的栅极移位寄存器之间存在级联关系,需要保证不同结构的栅极移位寄存器所运行的时序满足该级联关系的要求,具体可根据实际需要进行设计,在此不作具体限定。It should be noted that the specific circuit structure of the gate shift register in each sub-region can be different, but there is a cascade relationship between gate shift registers based on different structures, and it is necessary to ensure that gate shift registers of different structures The running sequence meets the requirements of the cascading relationship, and can be specifically designed according to actual needs, which is not specifically limited here.
可选地,在本公开实施例提供的阵列基板中,如图7所示,该边框区域还包括:第三边框子区域B4,第三边框子区域B4沿第二方向延伸,且与第二边框子区域B2相对设置;Optionally, in the array substrate provided by the embodiment of the present disclosure, as shown in FIG. 7, the frame area further includes: a third frame sub-area B4, and the third frame sub-area B4 extends in the second direction and is connected to the second frame. The border sub-region B2 is relatively set;
该阵列基板还包括位于第三边框子区域B4内的源极驱动电路D,该源极驱动电路D与位于显示区域A内的多条数据线(在图中未具体示出)电连接。The array substrate further includes a source drive circuit D located in the third frame sub-region B4, and the source drive circuit D is electrically connected to a plurality of data lines (not specifically shown in the figure) located in the display area A.
具体地,在本公开实施例提供的阵列基板中,可以将第二边框子区域与源极驱动电路设置在相对的侧边,以使各部分电路的排布更加合理。如将源极驱动电路设置在第三边框子区域,其中源极驱动电路已经占用了一部分边宽区域,若还将弧形子区域设置为与第三边框子区域相邻,则会增加布线难度,且会降低各电路的信号传输可靠性,容易出现短路的情况,影响正常显示。因此,将第二边框子区域与源极驱动电路设置在相对的侧边,可以更加合理的对各电路进行布局,以增加各电路的信号传输可靠性。Specifically, in the array substrate provided by the embodiment of the present disclosure, the second frame sub-region and the source driving circuit may be arranged on opposite sides, so that the arrangement of the circuits of each part is more reasonable. If the source driving circuit is arranged in the third frame sub-area, the source driving circuit has already occupied a part of the side width area, and if the arc-shaped sub-area is set to be adjacent to the third frame sub-area, it will increase the wiring difficulty , And it will reduce the signal transmission reliability of each circuit, and it is easy to short-circuit, which affects the normal display. Therefore, by arranging the second frame sub-region and the source driving circuit on opposite sides, each circuit can be laid out more reasonably, so as to increase the signal transmission reliability of each circuit.
可选地,在本公开实施例提供的阵列基板中,如图8所示,该边框区域B还包括:第四边框子区域B5,第四边框子区域B5与第一边框子区域B1相对设 置;Optionally, in the array substrate provided by the embodiment of the present disclosure, as shown in FIG. 8, the frame area B further includes: a fourth frame sub-area B5, and the fourth frame sub-area B5 is disposed opposite to the first frame sub-area B1 ;
第四边框子区域B5包括多个栅极移位寄存器S。The fourth frame sub-region B5 includes a plurality of gate shift registers S.
具体地,在本公开实施例提供的阵列基板中,除了可以在第二边框子区域设置栅极移位寄存器之外,在栅极移位寄存器的个数较多时,也可以在第四边框区域设置栅极移位寄存器,即在第一方向延伸的两侧边框处均设置栅极移位寄存器,从而可以实现对高像素显示面板进行驱动。Specifically, in the array substrate provided by the embodiment of the present disclosure, in addition to the gate shift register may be arranged in the second frame sub-region, when the number of gate shift registers is large, the gate shift register may also be arranged in the fourth frame area. The gate shift register is provided, that is, the gate shift register is provided at both sides of the frame extending in the first direction, so that the high-pixel display panel can be driven.
可选地,在本公开实施例提供的阵列基板中,如图8所示,该显示区域A包括:多条栅线G,该栅线G沿第二方向延伸;Optionally, in the array substrate provided by the embodiment of the present disclosure, as shown in FIG. 8, the display area A includes: a plurality of gate lines G, and the gate lines G extend along the second direction;
该第一边框子区域B1内的栅极移位寄存器S与第四边框子区域B5内的栅极移位寄存器S分别与不同行栅线G电连接。The gate shift register S in the first frame sub-region B1 and the gate shift register S in the fourth frame sub-region B5 are electrically connected to different rows of gate lines G, respectively.
具体地,在本公开实施例提供的阵列基板中,可以使分别设置在第一边框子区域和第四边框子区域内的栅极移位寄存器驱动不同的栅线,这样可以驱动更多行的像素,适用于高像素显示面板的驱动。也可以使分别位于第一边框子区域和第四边框子区域内的栅极移位寄存器驱动位于同一行的栅线,即采用双边驱动的方式。具体可根据实际需要进行选择,在此不作具体限定。Specifically, in the array substrate provided by the embodiment of the present disclosure, the gate shift registers respectively disposed in the first frame sub-region and the fourth frame sub-region can drive different gate lines, so that more rows can be driven. Pixels, suitable for driving high-pixel display panels. It is also possible to make the gate shift registers located in the first frame sub-region and the fourth frame sub-region to drive the gate lines located in the same row, that is, the double-sided driving method is adopted. The details can be selected according to actual needs, and there is no specific limitation here.
基于同一发明构思,本公开实施例还提供了显示面板,该显示面板包括上述任一实施例提供的阵列基板,以及位于显示区域内的多个子像素。Based on the same inventive concept, embodiments of the present disclosure also provide a display panel, which includes the array substrate provided by any of the above-mentioned embodiments, and a plurality of sub-pixels located in the display area.
其中,该阵列基板具有上述实施例提供的阵列基板的全部优点,因此,可以参考上述阵列基板的实施例进行实施,在此不再赘述。Among them, the array substrate has all the advantages of the array substrate provided by the above-mentioned embodiments. Therefore, implementation can be carried out with reference to the above-mentioned embodiments of the array substrate, which will not be repeated here.
基于同一发明构思,本公开实施例还提供了显示装置,该显示装置包括上述实施例提供的显示面板,以及位于该显示面板出光面一侧的保护盖板。Based on the same inventive concept, embodiments of the present disclosure also provide a display device, which includes the display panel provided in the above-mentioned embodiments, and a protective cover on one side of the light-emitting surface of the display panel.
其中,该显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的,在此不做赘述,也不应作为对本公开的限制。该显示装置的实施可以参见上述显示面板的实施例,重复之处不再赘述。Wherein, the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and so on. Other indispensable components of the display device are understood by those of ordinary skill in the art, and will not be repeated here, nor should they be used as a limitation to the present disclosure. The implementation of the display device can be referred to the embodiment of the above-mentioned display panel, and the repetition will not be repeated.
本公开实施例提供了阵列基板及显示面板,该阵列基板包括:衬底基板, 衬底基板包括显示区域以及围绕显示区域的边框区域;边框区域包括:沿第一方向延伸的第一边框子区域,沿第二方向延伸的第二边框子区域,以及连接于第一边框子区域与第二边框子区域之间的弧形子区域,其中,第一边框子区域与第二边框子区域相邻设置,第一方向与第二方向相互垂直;阵列基板包括位于边框区域的多个级联的栅极移位寄存器,且位于弧形子区域内的至少一个栅极移位寄存器在第二方向上的宽度小于位于第一边框子区域和第二边框子区域内的栅极移位寄存器在第二方向上的宽度。通过对弧形子区域内的栅极移位寄存器的尺寸进行设计,即使得弧形子区域内的所述栅极移位寄存器在所述第二方向上的宽度小于位于所述第一边框子区域和所述第二边框子区域内的所述栅极移位寄存器在所述第二方向上的宽度,从而减少了位于弧形子区域内的栅极移位寄存器占用显示区域的面积,可以增加该阵列基板的屏占比,并且有利于实现窄边框设计。Embodiments of the present disclosure provide an array substrate and a display panel. The array substrate includes a base substrate, the base substrate includes a display area and a frame area surrounding the display area; the frame area includes: a first frame sub-area extending in a first direction , A second frame sub-area extending along the second direction, and an arc-shaped sub-area connected between the first frame sub-area and the second frame sub-area, wherein the first frame sub-area is adjacent to the second frame sub-area The first direction and the second direction are perpendicular to each other; the array substrate includes a plurality of cascaded gate shift registers located in the frame area, and at least one gate shift register located in the arc-shaped sub-region is in the second direction The width of is smaller than the width in the second direction of the gate shift register located in the first frame sub-region and the second frame sub-region. By designing the size of the gate shift register in the arc-shaped sub-region, the width of the gate shift register in the arc-shaped sub-region in the second direction is smaller than that of the gate shift register in the first frame. Area and the width of the gate shift register in the second frame sub-area in the second direction, thereby reducing the area of the display area occupied by the gate shift register in the arc-shaped sub-area. Increasing the screen-to-body ratio of the array substrate is conducive to the realization of a narrow frame design.
显然,本领域的技术人员可以对本公开进行各种改动和变型而不脱离本公开的精神和范围。这样,倘若本公开的这些修改和变型属于本公开权利要求及其等同技术的范围之内,则本公开也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the present disclosure without departing from the spirit and scope of the present disclosure. In this way, if these modifications and variations of the present disclosure fall within the scope of the claims of the present disclosure and their equivalent technologies, the present disclosure is also intended to include these modifications and variations.

Claims (11)

  1. 一种阵列基板,其中,包括:衬底基板,所述衬底基板具有显示区域以及围绕所述显示区域的边框区域;An array substrate, comprising: a base substrate having a display area and a frame area surrounding the display area;
    所述边框区域包括:沿第一方向延伸的第一边框子区域,沿第二方向延伸的第二边框子区域,以及连接于所述第一边框子区域与所述第二边框子区域之间的弧形子区域,其中,所述第一边框子区域与所述第二边框子区域相邻设置,所述第一方向与所述第二方向相互垂直;The frame area includes: a first frame sub-area extending in a first direction, a second frame sub-area extending in a second direction, and connected between the first frame sub-area and the second frame sub-area The arc-shaped sub-area of, wherein the first frame sub-area and the second frame sub-area are arranged adjacently, and the first direction and the second direction are perpendicular to each other;
    所述阵列基板包括位于所述边框区域的多个级联的栅极移位寄存器,且位于所述弧形子区域内的至少一个栅极移位寄存器在所述第二方向上的宽度小于位于所述第一边框子区域和所述第二边框子区域内的所述栅极移位寄存器在所述第二方向上的宽度。The array substrate includes a plurality of cascaded gate shift registers located in the frame area, and the width of at least one gate shift register located in the arc-shaped sub-region in the second direction is smaller than that located in the second direction. The width in the second direction of the gate shift register in the first frame sub-region and the second frame sub-region.
  2. 如权利要求1所述的阵列基板,其中,所述弧形子区域内的各所述栅极移位寄存器的尺寸相同。8. The array substrate of claim 1, wherein the gate shift registers in the arc-shaped sub-regions have the same size.
  3. 如权利要求1所述的阵列基板,其中,在所述弧形子区域内,远离所述第一边框子区域的栅极移位寄存器在所述第二方向上的宽度小于靠近所述第一边框子区域的栅极移位寄存器在所述第二方向上的宽度。The array substrate of claim 1, wherein, in the arc-shaped sub-region, the width of the gate shift register far from the first frame sub-region in the second direction is smaller than that of the gate shift register near the first frame sub-region. The width of the gate shift register in the frame sub-region in the second direction.
  4. 如权利要求1-3任一项所述的阵列基板,其中,所有所述栅极移位寄存器的电路连接结构相同;3. The array substrate according to any one of claims 1 to 3, wherein the circuit connection structure of all the gate shift registers is the same;
    位于所述弧形子区域内的至少一个栅极移位寄存器在所述第一方向上的长度大于位于所述第一边框子区域和所述第二边框子区域内的所述栅极移位寄存器在所述第一方向上的长度。The length of at least one gate shift register located in the arc-shaped sub-region in the first direction is greater than the gate shift located in the first frame sub-region and the second frame sub-region The length of the register in the first direction.
  5. 如权利要求4所述的阵列基板,其中,位于所述第一边框子区域内的所述栅极移位寄存器在所述第二方向的宽度小于所述第二边框子区域内的所述栅极移位寄存器在所述第二方向的宽度。5. The array substrate of claim 4, wherein the gate shift register located in the first frame sub-region has a width in the second direction that is smaller than that of the gate in the second frame sub-region. The width of the pole shift register in the second direction.
  6. 如权利要求4所述的阵列基板,其中,位于所述第一边框子区域内的所述栅极移位寄存器在所述第一方向的长度大于位于所述第二边框子区域内 的所述栅极移位寄存器在所述第一方向的长度。5. The array substrate of claim 4, wherein the length of the gate shift register located in the first frame sub-region in the first direction is greater than the length of the gate shift register located in the second frame sub-region. The length of the gate shift register in the first direction.
  7. 如权利要求1-3所述的阵列基板,其中,位于所述弧形子区域内的所述栅极移位寄存器与位于所述第一边框子区域和所述第二边框子区域内的所述栅极移位寄存器的电路连接结构不同;8. The array substrate of claims 1-3, wherein the gate shift register located in the arc-shaped sub-area and all the gate shift registers located in the first frame sub-area and the second frame sub-area The circuit connection structure of the gate shift register is different;
    所述弧形子区域内的各所述栅极移位寄存器所占面积小于所述第一边框子区域和所述第二边框子区域内的各所述栅极移位寄存器所占面积。The area occupied by each of the gate shift registers in the arc-shaped sub-region is smaller than the area occupied by each of the gate shift registers in the first frame sub-region and the second frame sub-region.
  8. 如权利要求1-7任一项所述的阵列基板,其中,所述边框区域还包括:第三边框子区域,所述第三边框子区域沿所述第二方向延伸,且与所述第二边框子区域相对设置;7. The array substrate according to any one of claims 1-7, wherein the frame area further comprises: a third frame sub-area, and the third frame sub-area extends along the second direction and is connected to the first frame. The two border sub-regions are set relative to each other;
    所述阵列基板还包括位于所述第三边框子区域内的源极驱动电路,所述源极驱动电路与位于所述显示区域内的多条数据线电连接。The array substrate further includes a source drive circuit located in the third frame sub-region, and the source drive circuit is electrically connected to a plurality of data lines located in the display area.
  9. 如权利要求1-7任一项所述的阵列基板,其中,所述边框区域还包括:第四边框子区域,所述第四边框子区域与所述第一边框子区域相对设置;7. The array substrate according to any one of claims 1-7, wherein the frame area further comprises: a fourth frame sub-area, and the fourth frame sub-area is arranged opposite to the first frame sub-area;
    所述第四边框子区域包括多个所述栅极移位寄存器。The fourth frame sub-region includes a plurality of the gate shift registers.
  10. 如权利要求9所述的阵列基板,其中,所述显示区域包括:多条栅线,所述栅线沿所述第二方向延伸;9. The array substrate of claim 9, wherein the display area comprises: a plurality of gate lines, the gate lines extending along the second direction;
    所述第一边框子区域内的所述栅极移位寄存器与所述第四边框子区域内的所述栅极移位寄存器分别与不同行所述栅线电连接。The gate shift register in the first frame sub-region and the gate shift register in the fourth frame sub-region are electrically connected to the gate lines in different rows, respectively.
  11. 一种显示面板,其中,包括权利要求1-10任一项所述的阵列基板,以及位于所述显示区域内的多个子像素。A display panel, comprising the array substrate according to any one of claims 1-10, and a plurality of sub-pixels located in the display area.
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