WO2021156380A1 - Dispositif et procédé de réparation d'un défaut d'un composant optique pour la plage de longueurs d'onde des ultraviolets extrêmes - Google Patents

Dispositif et procédé de réparation d'un défaut d'un composant optique pour la plage de longueurs d'onde des ultraviolets extrêmes Download PDF

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Publication number
WO2021156380A1
WO2021156380A1 PCT/EP2021/052695 EP2021052695W WO2021156380A1 WO 2021156380 A1 WO2021156380 A1 WO 2021156380A1 EP 2021052695 W EP2021052695 W EP 2021052695W WO 2021156380 A1 WO2021156380 A1 WO 2021156380A1
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Prior art keywords
defect
optical component
photon beam
euv
repair
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PCT/EP2021/052695
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German (de)
English (en)
Inventor
Conrad WOLKE
Martin Dietzel
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Carl Zeiss Smt Gmbh
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Publication of WO2021156380A1 publication Critical patent/WO2021156380A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects

Definitions

  • the present invention relates to a device and a method for repairing at least one defect of an optical component for the extreme ultraviolet (EUV) wavelength range, the optical component for the EUV wavelength range comprising a substrate and a multilayer structure arranged on the substrate.
  • EUV extreme ultraviolet
  • EUV extreme ultraviolet
  • vorzugswei se in the range from 10 nm to 15 nm.
  • These EUV lithography systems are based on a completely new beam guidance concept that uses reflective optical elements, since no materials are currently available that are optically transparent in the specified EUV range.
  • the technological challenges in developing The development of EUV systems are enormous and huge development efforts are necessary to bring these systems to industrial maturity.
  • the photolithographic masks, exposure masks, photo masks or simply masks play a decisive role in the imaging of ever smaller structures in the photoresist arranged on a wafer. With every further increase in the integration density, it becomes increasingly important to reduce the minimum feature size of the exposure masks. The manufacturing process of photolithographic masks is therefore becoming increasingly complex and thus more time-consuming and ultimately also more expensive. Due to the tiny structure sizes of the pattern elements, errors in mask production cannot be ruled out. These must be repaired whenever possible.
  • L. Pang et ab “Compensation of EUV multilayer defects within arbitrary layout by absorber pattern modification”, in “Extreme Ultraviolet Lithography”, published by B.M. Fontaine and P.P. Naulleau, Proc. of SPIE Vol. 7969, 79691E-1 - 79691E-14; WO 2016/037851 Ai; M. Waiblinger et ab: "The door opener for EUV mask repair", in "Photomask and Next Generation Lithography Mask Technology XIV", edited by K. Kato, Proc. of SPIE, Vol.
  • the present invention is based on the problem of specifying a device and a method which make it possible to improve the repair of defects in optical components for the extreme ultraviolet wavelength range.
  • the device for repairing at least one defect of an optical component for the extreme ultraviolet (EUV) wavelength range wherein the optical component comprises a substrate and a multilayer structure arranged on the substrate: (a) at least one light source which out forms is to generate a photon beam in the EUV wavelength range and / or in the wavelength range of soft X-ray radiation; and (b) wherein the at least one light source is further designed to repair the at least one defect by locally changing the optical component.
  • the inventive device represents a paradigm shift in the repair of components for the EUV wavelength range.
  • an electron beam activates a local deposition process to deposit missing material or a local etching process to remove excess material by providing a precursor -Gas at the reaction site.
  • a device according to the invention uses a photon beam in the EUV wavelength range and / or in the wavelength range of soft X-rays in order to repair a defect directly.
  • a device according to the invention overcomes the lateral resolution limitation of conventional repair devices which is brought about by the use of a precursor gas. Due to the small wavelength of electromagnetic radiation in the EUV range, a device according to the invention advances into new dimensions of lateral spatial resolution when repairing defects in optical components for the EUV wavelength range. In addition, contamination of the optical component with a defect repair by a precursor gas and / or its constituents is avoided.
  • the EUV spectral range includes wavelengths from 10 nm to 121 nm. This corresponds to photon energies between 124 eV (electron volts) and 10.3 eV.
  • the range of soft X-rays is understood to mean the wavelength range from 0.1 nm to 10 nm.
  • the associated photon energies extend over the range from 12400 eV or 12.4 keV to 124 eV.
  • the actinic wavelength i.e. the wavelength at which the optical component is operated, preferably comprises the wavelength range from 10 nm to 15 nm or the energy range from 124 eV to 82.7 eV.
  • the at least one light source can generate a photon beam with a wavelength in the range of the actinic wavelength.
  • a focused photon beam in the range of the actinic wavelength has a high lateral spatial resolution, which enables a very precise repair of a defect to be carried out and at the same time reduces the risk of damage to the optical component during the repair process.
  • a light source that emits a photon beam in the range of the actinic wavelength ge generated can be used to take an aerial photo of a defective area and / or a repaired area.
  • the local change in the optical component can include a local change in a reflectivity of the optical component in the range of an actinic wavelength.
  • Defects in a reflective optical component for the EUV wavelength range typically manifest themselves in an uneven distribution of the reflected optical intensity. There may be areas of the optical component from which more or less light, as intended by the design, is reflected. By using the EUV photon beam to locally change the reflectivity of the optical component, the uneven distribution of the optical intensity reflected by the optical component can be eliminated or at least significantly reduced.
  • the local changing of the optical component can comprise a local removal of material from the optical component with the photon beam.
  • the material is removed from the optical component by evaporation with the aid of the photon beam.
  • it In order to evaporate material, it has to be heated to the material-specific evaporation temperature, for which an amount of energy is necessary that is dependent on the density and the heat capacity of the material.
  • the material-specific heat of vaporization must also be made available to the material.
  • a focused EUV photon beam can apply these specific energy densities locally, i.e. energy per volume. This is essentially based on two properties of an EUV photon beam. On the one hand, this can be focused on a very small diffraction-limited area and, on the other hand, pulses of EUV photon beams in the sub-femtosecond range can be generated, which have a very high power density.
  • An optical component can comprise a photolithographic mask for the EUV wavelength range or a mirror for the EUV wavelength range.
  • the local removal of material can include at least one element from the group: removing excess material of at least one element of an absorber pattern of a photolithographic mask, removing material from the multilayer structure of the optical component, and removing at least one particle from the optical component .
  • the light source of a device enables both the repair or correction of defects in excess material and defects in missing material.
  • a defect of missing absorber material in one or more pattern elements of a photolithographic mask is compensated for by locally removing part of the multilayer structure.
  • essentially no more photons are reflected from the processed part of the photolithographic mask and the repaired area cannot be distinguished from a defect-free area in an aerial photograph or in an image in a photoresist.
  • an uneven reflection of an EUV mirror can be repaired.
  • a particle present on the optical component which is visible in an aerial photograph of the optical component, can be removed from a surface of the optical component by evaporation by means of a focused EUV photon beam.
  • the at least one light source can also be designed to set an energy density of the photon beam for repairing the at least one defect in the optical component.
  • the energy density of the photon beam can be adjusted by at least two parameters.
  • the focus condition and thereby the spot size can be set with which the photon beam of the light source hits the defect or the optical Component hits.
  • the average power and thus also the pulse power of the photon beam can be varied.
  • the device according to the invention can furthermore have a detector for detecting photons reflected by the optical component, and / or an energy sensor for detecting photons reflected by the optical component and / or the at least one defect during a repair for monitoring the repair.
  • the device has a detector, this can be used before, during and after a repair process of a defect in order to examine the effect of the defect or of a remaining defect part.
  • the detector can be used in combination with the photon beam to check the success of a defect repair.
  • An energy sensor can be used to detect photons reflected from the repaired site during a repair process and thereby determine a change in the photon flux density, in particular a decrease in the photon flux density during the repair process.
  • the detector can comprise a CCD (Charge Coupled Device) camera for the EUV wavelength range.
  • the energy sensor can be an element or a Detekto element of a CCD camera.
  • the device according to the invention can comprise an energy-dispersive X-ray detector.
  • the energy dispersive X-ray detector can detect photons generated by the optical component and / or the defect of the optical component as a result of the irradiation with the photon beam. This makes it possible to determine a material composition, the material that the photon beam is processing.
  • the device according to the invention can be designed to operate the at least one light source and the energy sensor in a closed feedback loop. This makes it possible to monitor a repair process in real time. The likelihood of a repair operation failing can be significantly reduced. In particular, damage to the optical component can be largely prevented, since it can be determined in real time whether the material of a defect or the optical component is being removed.
  • the device according to the invention can furthermore have at least one first mirror for scanning the photon beam over the at least one defect in the optical component, and can have at least one second mirror for directing the photon beam onto a region of the optical component that includes the at least one defect , exhibit.
  • An embodiment of the device according to the invention with two mirrors makes it easier to switch the device from an examination mode of the optical component or the defect of the optical component to a repair mode for repairing the defect and vice versa.
  • the at least one first mirror can be designed to focus the photon beam on the at least one defect in the optical component. Furthermore, the at least one first mirror can be designed to scan the focused photon beam over the optical component and / or the at least one defect in the optical component.
  • the at least one light source can be designed to generate a coherent photon beam in the EUV wavelength range and / or in the wavelength range of soft X-ray radiation.
  • the at least one light source can comprise a high harmony generation (HHG) laser.
  • HHG high harmony generation
  • the spectrum of high harmonics of a focused femtosecond laser system extends into the EUV wavelength range and sometimes beyond into the even shorter-wave spectral range.
  • An HHG laser generates ultrashort EUV or X-ray pulses with a small beam divergence.
  • a photon beam can have a spot diameter of 0.5 nm to 200 nm, preferably 1 nm to 100 nm, more preferably 1 nm to 50 nm, and most preferably 1 nm to 20 nm.
  • the spot diameter denotes the FWHM (Full Width Half Maximum) half-value width of the photon beam.
  • a photon beam can comprise pulses with a pulse length in the range from 0.5 fs to 200 fs, preferably 1 fs to 100 fs, more preferably 2 fs to 50 fs and most preferably from 3 fs to 30 fs.
  • the abbreviation “fs” stands for femtosecond.
  • the pulses of the photon beam can have a pulse power in the range from 0.5 nW to 2 nW, preferably 0.2 nW to 5 nW, more preferably 0.1 nW to 10 nW, and most preferably 0.05 nW to 20 nW.
  • the device according to the invention can furthermore have a control device which is designed to move the at least one first mirror and / or the at least one second mirror over a macroscopic distance.
  • the device according to the invention can comprise a Fresnel zone plate and / or the control device can be designed to move the Fresnel zone plate into the photon beam and out of the photon beam.
  • the device defined above has a Fresnel zone plate which makes it possible to switch between a repair mode and an investigation mode.
  • the control device can also be designed to configure the device for an examination mode with the photon beam, and / or the control device can also be designed to switch the device between the examination mode and a repair mode. It is a decisive advantage of a device according to the invention that on the one hand it enables the optical component or a defect of the optical component to be examined and, on the other hand, allows the defect to be repaired without the optical component having to be moved from the repair tool to a review tool so it has to be realigned. In addition, the transport of the optical component from a first tool to a second tool typically causes the vacuum to be broken, which additionally slows down the process sequence. For the reasons mentioned, a device according to the invention drastically accelerates a repair process compared to the prior art.
  • the device according to the invention can furthermore have a sample holder for fixing the optical component, which is designed to rotate the optical component about at least one axis, and / or the sample holder can furthermore be designed to displace the optical component in at least one lateral direction in order to to examine a substantially defect-free area of the optical component with the photon beam.
  • the repair of a defect can be carried out by a substantially perpendicular incidence of the photon beam on the optical component.
  • To examine the optical component for example to check the success of the repair process, it is necessary for the photon beam to strike the optical component at the angle with respect to the normal direction that is provided for by the design. This condition can be established by rotating the optical component. As a result, the best possible aerial image of the repaired area of the optical component can be obtained in the examination mode.
  • At least one mirror of the device is moved in order to meet the Bragg condition for the optical component.
  • the at least one light source can comprise a first light source which is designed to scan a focused photon beam over the at least one defect in order to repair the at least one defect, and can comprise a second light source, which is designed to direct a photon beam onto the region of the optical component which comprises at least the at least one defect.
  • a device in a third embodiment, comprises two separate light sources which are optimized for their respective task.
  • the arrangement of the two light sources can be selected so that no parts have to be moved over macroscopic distances to switch between a repair mode and an examination mode.
  • the first and the second light source can generate a photon beam in the actinic wavelength range of the optical component.
  • the first light source can generate a photon beam outside the actinic wavelength range and the second light source can generate a photon beam within the actinic wavelength range.
  • the optical component can comprise a pellicle through which the photon beam shines.
  • a device can carry out both a repair process and an examination process for the optical component in which the optical component has a pellicle.
  • a De fect is examined as it manifests itself in the operation of the optical component.
  • the repair process is carried out under real-life conditions for the optical component.
  • Another advantage is that repairs can be carried out through a pellicle, with the pellicle remaining fully functional after the repair process has ended and therefore does not have to be replaced. In this way, a pellicle mounted on an optical component prevents the material removed from the optical component from precipitating in the device or at distant points on the optical component and thereby contaminating it.
  • a deposit of the material removed from the mask on the pellicle is not, or only to a very slight extent, detrimental to the exposure process to be carried out by the mask.
  • a method for repairing at least one defect of an optical component for the extreme ultraviolet (EUV) wavelength range wherein the optical component comprises a substrate and a multilayer structure arranged on the substrate, has the steps: (a) generating a photon beam in the EUV Wavelength range and / or in the wavelength range of soft X-rays; and (b) adjusting the photon beam so that the at least one defect is repaired by locally changing the optical component.
  • EUV extreme ultraviolet
  • the setting of the photon beam can comprise at least one element from the group: focusing the photon beam, changing a pulse power of the photon beam, changing a polarization of the photon beam, and changing an angle of incidence of the photon beam with respect to a normal direction of the optical component.
  • the method according to the invention can also have the step: switching between repairing the at least one defect in the optical component with the photon beam and examining the optical component and / or the at least one defect in the optical component with the photon beam.
  • the method according to the invention can furthermore have at least one of the steps: (a) examining the at least one defect with the photon beam and / or examining an essentially defect-free reference position with the photon beam; (b) determining a form of repair for the at least one examined defect if the at least one examined defect exceeds a predetermined threshold; (c) repairing the at least one defect with the photon beam; (d) examining a repaired location of the optical component with the photon beam; and (e) repeating steps a. and b. if a remaining remainder of the at least one defect exceeds the predetermined threshold.
  • the device according to one of the aspects described above can be designed to carry out the method steps of one of the methods specified above.
  • a computer program comprises instructions which, when executed by a computer system, cause the computer system to carry out the procedural steps of the aspects described above. 4. Description of the drawings
  • Fig. 1 in the upper part schematically shows a section of a section of a side view of a mask for the extreme ultraviolet wavelength range (EUV), with a pattern element which has a defect in the form of excess absorber material, and in the lower part a plan view of the Side view of the upper part of the picture reproduces;
  • EUV extreme ultraviolet wavelength range
  • FIG. 2 schematically illustrates the change in the normalized intensity during the repair of the defect of excess absorber material of the EUV mask of FIG. 1;
  • 3 in the upper part schematically shows a section of a section of a side view of an EUV mask, with a pattern element which has a de fect in the form of absent absorber material, and in the lower part a plan view of the side view of the upper part is presented ;
  • FIG. 4 schematically illustrates the change in the normalized intensity during the repair of the defect of the missing absorber material of the EUV mask of FIG. 3;
  • 5 in the upper partial image shows schematically a detail of a section of a side view of an EUV mask which has a defect in the form of a particle, and in the lower partial image reproduces a plan view of the side view of the upper partial image;
  • FIG. 6 schematically shows a section through an EUV mask with a defect and a first exemplary embodiment of a device for repairing the defect, the device operating in repair mode;
  • Fig. 7 reproduces Fig. 6, but the device is operating in the investigation mode;
  • FIG. 8 shows the EUV mask of FIG. 6 with a second exemplary embodiment of the device for repairing the defect, the device operating in the repair mode;
  • Fig. 9 reproduces Fig. 8 but with the device operated in the examination mode
  • Fig. Io reproduces the EUV mask of FIG. 6 with a third embodiment of the device for repairing the defect, the device operating in the repair mode;
  • Fig. 11 reproduces Fig. 10, but the device is operating in the examination mode;
  • FIGS. 10 and n shows the device of FIGS. 10 and n, the device operating simultaneously in the repair mode and in the examination mode;
  • Figure 13 shows the configuration of Figure 6 with a pellicle mounted on the EUV mask during the repair process
  • FIG 15 shows in the upper partial images the stripe structures of the EUV mask of the partial images of FIG lower right partial image shows the reference stripe structure of the upper right
  • Fig. 16 shows the images of Fig. 14 after the defect has been repaired
  • 17 is a flowchart showing an optical component repair process for the EUV wavelength range.
  • a device according to the invention and of a method according to the invention for repairing one or more defects in a photographic mask for the extreme ultraviolet (EUV) wavelength range are explained in more detail.
  • the device according to the invention and the method according to the invention are not restricted to the examples discussed below. Rather, they can generally be used to repair defects in optical components for the extreme ultraviolet (EUV) wavelength range.
  • optical components for the EUV wavelength range include EUV photomasks as well as EUV mirrors, i.e. mirrors for the EUV wavelength range.
  • a photolithographic mask 100 for the EUV wavelength range is also called EUV mask 100 or EUV photomask 100 in the following.
  • the exemplary EUV mask 100 of FIG. 1 is designed for an exposure wavelength or an actinic wavelength in the range of 13.5 nm.
  • the EUV mask 100 has a substrate 110 made of a material with a low coefficient of thermal expansion, such as quartz, for example. Other dielectrics, glass materials or semiconducting materials can also be used as substrates for EUV masks, such as ZERODUR®, ULE® or CLEARCERAM®.
  • the back or the back surface of the substrate 110 of the EUV mask 100 is used to hold the substrate 110 during the production of the EUV mask 100 and during its operation in an EUV Photolithography apparatus.
  • a thin electrically conductive layer for holding the substrate on an electrostatic suction device (English: electrostatic chuck (ESC)) is preferably applied (not shown in FIG. 1).
  • the EUV mask loo has no electrically conductive layer on the back of the mask substrate no and the EUV mask 100 is operated in an EUV with the aid of a vacuum chuck (VC). Photolithography device fixed.
  • a multilayer film or a multilayer structure 120 is deposited on the front side of the substrate no, which comprises 20 to 80 pairs of alternating molybdenum (Mo) and silicon (Si) layers, which are also referred to below as MoSi layers.
  • Mo molybdenum
  • Si silicon
  • the thickness of the Mo layers is 4.15 nm and the Si layers have a thickness of 2.80 nm.
  • a cover layer 130 for example made of silicon dioxide, typically with a thickness of approximately 7 nm is applied to the topmost silicon layer.
  • Other materials such as ruthenium (Ru) can also be used to form a cover layer 130.
  • layers made of other elements with a high number of nucleons such as cobalt (Co), nickel (Ni), tungsten (W), rhenium (Re), zirconium (Zn) or iridium (Ir), can also be used for the MoSi layers. be used.
  • the multilayer structure 270 can be deposited, for example, by ion beam deposition (IBD, ion beam deposition).
  • An absorption layer is deposited on the cover layer 130 of the EUV mask 100.
  • Materials suitable for the absorption layer include Cr, titanium nitride (TiN) and / or tantalum nitride (TaN).
  • An anti-reflective layer for example made of tantalum oxynitride (TaON) (not shown in FIG. 1), can be applied to the absorption layer.
  • the absorption layer is structured, for example, with the aid of an electron beam or a laser beam, so that a structure of absorbing pattern elements is generated from the absorption layer over the entire area.
  • a pattern element 140 is shown which is wider than provided by the design.
  • the excess material 150 is a defect 150 of the EUV mask 100. Due to the defect 100, excess material is removed from the area. than 150 no or at least very much fewer EUV photons reflected than intended by the design.
  • the defect 150 of excess absorber material can be removed with the aid of an EUV laser beam 160 or an EUV photon beam 160.
  • An EUV photon beam can be generated, for example, by focusing ultra-short pulses from a pump laser and exposing them to a gas flow in the focus or in the vicinity of the focus.
  • a titanium: sapphire laser for example, can be used as the pump laser, which preferably emits femto-tilt light pulses at a wavelength of 800 nm.
  • Noble gases such as krypton or xenon are currently preferably used as gases for generating EUV photon beams 160.
  • HHG High Harmony Generation
  • an EUV spectrometer can be used to select a harmonic which is in the actinic wavelength range, for example 13.5 nm, or comes closest to the actinic wavelength range.
  • HHG laser systems in actinic wavelengths range an average power of about 1 pW, this corresponds to an assumed photon energy of 100 eV per photon a photon flow of about 7 ⁇ 10 10 photons / s. It is now assumed that 10% of the EUV photons can be concentrated in a spot diameter of 100 nm. This corresponds to a photon flux density of approximately 7 ⁇ 10 6 photons / (nm 2 -s).
  • the interaction zone of the EUV photon beam 160 is illustrated in FIG. 1 by the reference number 170.
  • the interaction of the photons of femtosecond pulses with matter can no longer be described by the classic ablation model, which takes into account the processes of heat conduction, melting, evaporation and plasma formation.
  • the non-classical ablation model which describes the ultrafast interaction between a photon beam and matter, is based on the assumption that when ultrashort laser pulses act on matter, the electrons or, in a metal, the electron gas are no longer in thermal equilibrium with the atomic cores . On a femtosecond time scale, the electron gas cannot deliver its energy instantaneously to the lattice of atomic cores.
  • the ultrashort pulses of the EUV photon beam 160 are scanned over the defect 150.
  • One, several or many, for example several hundred, pulses can be directed to the same location of the defect 150 before the photon beam 160 is focused on a new position of the defect 150.
  • the photon beam 160 and / or the EUV mask 100 can, if necessary, be tilted from the normal direction.
  • FIG. 2 schematically shows the growth of the EUV photons reflected from the region of the defect 150 of the EUV mask 100.
  • a point of the EUV mask 100 is considered as a reference which has an identical arrangement of pattern elements 140, but without having a defective point 150 or a defective position 150.
  • the defective area of the EUV mask 100 is related to this reference position. Because the excess absorber material of the defect 150 is removed from the cover layer 130 of the EUV mask with the aid of the EUV photon beam 160, the optical intensity reflected by the EUV mask increases locally. After the radiation reflected from the area of the defect 150 reaches the level of the reference area, the repair process is stopped in that the EUV photon beam 160 is switched off or interrupted.
  • the optical intensity reflected from the defective area in the EUV wavelength range can be measured permanently by means of an energy sensor during the repair process. This is illustrated in FIG. 2. But it is also possible to interrupt the repair process from time to time and with
  • the upper partial image 305 of FIG. 3 shows a side view of a section of an EUV mask 300 which has a defect 350 missing absorber material of a pattern element 340.
  • the lower part 355 presents the associated top view.
  • the defect 350 is characterized in that EUV photons are reflected from an area of the EUV mask 300 which should appear dark.
  • the defect 350 of missing absorber material can be repaired in various ways.
  • the multilayer structure 120 below the defective area 350 can be removed with a focused EUV photon beam 360. This ensures that EUV photons can no longer be reflected from the area of the defect 350.
  • the reference numeral 370 illustrates the local interaction zone of the EUV photon beam 360 with the material of the multilayer structure 120 of the EUV mask 300.
  • the defect 350 it may also be sufficient to remove only part of the multilayer structure 120 in the region of the defect 350.
  • the uppermost layers of a multilayer structure 120 contribute the majority to the reflection of EUV photons.
  • the repair process explained with reference to FIG. 3 can also be used to repair a local excess of optical intensity of a mirror for the EUV wavelength range (not shown in FIG. 3).
  • a locally increased reflectivity of an EUV mirror can be brought about by a defect in the multilayer structure 120 and / or the substrate 110.
  • FIG. 4 schematically illustrates the change in the locally reflected optical intensity of the EUV mask 300 as a result of the execution of the process described in FIG. repair process.
  • the intensity reflected from the area of the defect 350 is, similarly to FIG. 2, normalized to a defect-free area of the EUV mask 300 with an identical pattern. Due to the lack of absorber material due to the defect 350, EUV photons are reflected from an area of the EUV mask 300 which should actually be dark. As a result, the defect 350 leads to a locally increased reflectivity of the EUV mask 300.
  • the repair of the defect 350 with the EUV photon beam 360 reduces the local excess of optical intensity. As soon as the radiation reflected from the area of the defect reaches the reference level, the repair process of the EUV mask 300 is ended.
  • the upper partial image 505 of FIG. 5 presents a side view of a section of a detail of an EUV mask 500 that has a particle 550 on the cover layer 130 of the multilayer structure 120.
  • the lower partial image 555 in turn shows the associated top view.
  • the particle 550 shades part of the multilayer structure 120 for incident EUV photons, which means that the EUV mask 500 reflects fewer photons from the area of the defect 550, i.e. the particle 550, than from a defect-free reference area.
  • the particle 550 can be removed from the cover layer 130 of the EUV mask 500 by means of the focused photon beam 560.
  • the reference number 570 in turn illustrates the interaction zone of the EUV photon beam 560 with the particle 550.
  • the diagram 695 of FIG. 6 shows a side view of a section of an EUV mask 600.
  • the EUV mask 600 can be one of the defective EUV masks 100,
  • FIG. 6 illustrates a first exemplary embodiment of a device 700 for repairing the defect 650 and for examining the EUV mask 600 or generally an optical component 100, 300, 500 for the EUV wavelength range.
  • the device 700 comprises a light source 610 for the EUV wavelength range, which generates a collimated EUV photon beam 605. Furthermore, the device 700 has a control device 750 which is connected to the EUV light source 610 via the connection 710.
  • the EUV photon beam 605 generated by the EUV light source 610 is focused on the defect 650 of the EUV mask 600 by a first imaging EUV mirror 620.
  • the first imaging EUV mirror 620 is connected to the control device 750 of the device 700 via the connection 730.
  • the energy sensor 690 detects the EUV photons 680 reflected from the area of the defect 650 while the focused EUV photon beam 630 is scanned over the defect 650 by the control device 750.
  • the energy sensor 690 is also connected to the control device 750 of the device 700 via the connection 720. With the help of the energy sensor 690, the control device 750 can control the EUV
  • FIG. 7 schematically shows the execution of the sub-process of examining the EUV mask 600 for the first embodiment shown in FIG. 6 by the device 700.
  • the control device 750 moves the device 700 the first imaging EUV mirror 620 from the collimated EUV photon beam 605 of the EUV light source 610.
  • the EUV photon beam 605 can impinge on the second imaging EUV mirror 650.
  • the second imaging EUV mirror 650 directs the EUV photon beam 605 as an expanded photon beam 760 onto an area of the EUV Mask 600 that includes the area that contains the defect 650.
  • the defect 650 comprises the particle 550.
  • the multilayer structure 120 EUV mask 600 reflects part of the incident EUV photons of the beam 760 in the direction of the detector 780.
  • the detector 780 includes a CCD camera.
  • the device 700 for repairing the defect 650 comprises the EUV light source 610 of the first embodiment. This in turn is connected to the control device 750 via the connection 710.
  • the control device 750 is also connected via the connection 810 to a non-imaging EUV mirror 820, via the connection 855 to a Fresnel zone plate 850 and via the connection 865 to an energy sensor 680.
  • the EUV photon beam 605 generated by the EUV light source is directed by the EUV mirror 820 as an EUV photon beam 830 onto the Fresnel zone plate 850.
  • the Fresnel zone plate 850 focuses the EUV photon beam 840 passing through it on the defect 650 of the EUV mask 600.
  • the EUV light 860 reflected by the defective area 650 of the EUV mask 600 during the repair is detected by the energy sensor 680 .
  • the control device 750 of the device 700 can operate the EUV light source 610, similar to the first exemplary embodiment, in a closed feedback loop (not shown in FIG. 8).
  • FIG. 9 shows the second sub-process of the second exemplary embodiment, namely examining the EUV mask 600 with the EUV photon beam 605 from the EUV light source 610.
  • the control device 750 moves the Fresnel zone plate 850 out of the beam path of the EUV photon beam 920.
  • the photon beam 830 which is no longer focused, hits the multilayer structure 120 of the EUV mask 600 in the area of the defect 650
  • Control device 750 a rotation of the sample holder on which the EUV mask 600 is arranged.
  • the rotation of the EUV mask 600 is illustrated in FIG. 9 by reference number 910.
  • the sample holder (English: stage) is not shown in FIG. 9.
  • the diagram 100 of FIG. 10 represents a third exemplary embodiment of the device 700 according to the invention.
  • the third exemplary embodiment of FIG. 10 comprises a first EUV light source 1010 and a second EUV light source 1020, both of which are connected to the Control device 750 are connected.
  • the control device 750 is connected to the detector 690 via the connection 695.
  • the third exemplary embodiment is also explained on the basis of the repair of the defects 650 of the EUV mask 600.
  • the repair part of the third exemplary embodiment of the device 700 according to the invention is shown schematically in FIG. 10.
  • the second EUV light source 1020 radiates a focused photon beam 1030 onto the defect 650 of the EUV mask 600 or scans the focused photon beam 1030 over the defect 650.
  • the repair process is interrupted and the treated or repaired point 650 of the EUV mask 600 is examined.
  • the focused photon beam 1030 of the second EUV light source is stopped.
  • the first EUV light source 1010 is then switched on, which directs a collimated EUV photon beam 1130 onto the area of the EUV mask 600 which contains the defect 650.
  • the area of the beam spot is selected to be so large that the threshold density for melting the multilayer structure 120 of the EUV mask 600 is not reached. Based on the above estimate, this requires a spot diameter of about 5 ⁇ m or more.
  • the first EUV light source 1010 and the detector 690 are arranged with respect to the normal direction of the EUV mask 600 so that the Bragg reflection condition for the actinic wavelength range of the EUV mask 600 is met as best as possible is.
  • the third embodiment has the particular advantage that in order to switch between the repair mode and the examination mode of the device 700, no parts of the device 700 have to be moved over macroscopic distances.
  • the first EUV light source 1010 and the second EUV light source can be designed such that a single EUV light source generates both the focused EUV photon beam 1030 and the EUV photon beam 1130.
  • the first 1010 and the second EUV light source 1020 only provide a beam shaping device and / or a beam guiding device.
  • FIG. 12 shows an exemplary embodiment of the device 700 in which both light sources 1010 and 1020 simultaneously radiate photons 1030 and 1130 onto the defect 650 or in an area around the defect 650.
  • the first EUV light source 1010 radiates an EUV photon beam 1130 in the area of the actinic wavelength onto the EUV mask 600 and the second EUV light source 1020 generates photons outside the actinic wavelength range of the EUV mask 600 . This ensures that there are essentially no
  • FIG. 13 reproduces FIG. 6 with the difference that a pellicle 1310 is attached to the EUV mask 600.
  • the distance between the EUV pellicle 1310 and the cover layer 130 of the EUV mask is in the range from 2 to 3 mm. Both the repair process and the examination process of the EUV mask 600 take place through the pellicle 1310. This makes it possible to examine the effect of a defect 650 in the EUV mask 600 under the conditions that exist in real operation of the EUV mask
  • the repair processes and / or examination processes of the EUV mask 600 described with reference to FIGS. 8 to 12 can likewise be carried out with a pellicle 1310 mounted on the EUV mask. This has two advantages. On the one hand, the repair can be carried out under the operating conditions of the mask and, on the other hand, contamination of the optical components of the repair device can be prevented. On the other hand, material removed from the mask and deposited on the pellicle mounted on the mask hardly interferes with the exposure process to be carried out by the mask.
  • FIG. 14 shows a plan view of a section of a strip structure 1420 which has a defect 1450.
  • the right partial image 1415 of FIG. 14 presents a top view of a section of a defect-free reference strip structure 1425. Both images were recorded with an EUV-AIMS TM.
  • the defect 1450 can be analyzed in detail from the partial image on the left.
  • the analysis of the defect 1450 can include a comparison of the defective strip structure 1420 with the defect-free reference strip structure 1425.
  • a repair form for the defect 1450 is created from the detailed analysis of the defect 1450.
  • the form of repair gives, for example, the type of defect, the size of the defect, the position of the defect with respect to one or more pattern elements, the pattern type of the EUV mask, and the exposure setting of the scanner during operation of the mask.
  • the repair form describes the coordinates of the dimensions of the defect on an EUV mask and specifies the absorbed dose to be applied to repair the defect for the defect coordinates.
  • the repair form determined for the defect 1450 is transferred to the device 700 for repairing the defect.
  • FIG. 15 schematically presents the repair of the defect 1450 of FIG. 14 by means of an embodiment of the device 700.
  • the upper left partial image 1510 of FIG. 15 essentially shows the detail of the left partial image of FIG EUV photon beam 750, 830, 1130 of the device 700 is imaged in the examination mode.
  • the device 700 “sees” the defect 1450 of FIG. 14 in the examination or imaging mode.
  • the upper left partial image 1515 shows the reference stripe structure 1525 of FIG. 14, recorded with the EUV photon beam 750, 830, 1130 of the device 700 .
  • the repair process of the defect 1450 by the EUV photon beam 630, 840, 1030 of the device is symbolized in FIG. 15 by the arrow 1580.
  • the device 700 receives a form of repair for the defect 1450 from the defect review tool, for example an EUV-AIMS TM.
  • the EUV photon beam 630, 840, 1030 as specified by the repair form, scanned over the defect 150, 350, 550, 1450.
  • the repair of the defect 1450 can be interrupted from time to time in order to analyze the remaining defect.
  • the repair can be interrupted periodically or can be specified by the type of repair.
  • the lower left partial image 1550 of FIG. 15 shows the detail of the strip structure 1530 of the upper left partial image 1510 after the defect repair has been completed.
  • the repaired location is illustrated in the strip structure 1530 of the partial image 1550 by the reference symbol 1560.
  • the lower right partial image 1555 again reproduces the reference strip structure 1525 of the upper right partial image 1515.
  • FIG. 16 shows the aerial image of an image of the repaired section 1530 of the lower left partial image 1550 of FIG. 15, recorded with the EUV-AIMS TM.
  • the repaired location 1560, the repaired position 1560 or the repaired area 1560 is identified in the partial image 1610.
  • the right partial image 1615 reproduces the reference strip structure 1425 of the partial image 1415. 16 it can be seen that the device 700 has repaired the defect 1450 to such an extent that it is no longer visible in an aerial image of an EUV-AIMS TM.
  • FIG. 17 shows a flow diagram 1700 of an overall sequence of a defect repair of an optical component 100, 300, 500 for the EUV wavelength range.
  • the method begins at block 1705.
  • This step is typically carried out with a review tool such as an EUV-AIMS TM.
  • the review tool uses a charged particle beam, for example an electron beam.
  • Step 1715 a reference image of a defect-free reference position is also recorded with a review tool.
  • Step 1715 is an optional step. This is symbolized in FIG. 17 by the dashed border.
  • decision block 1720 it is then determined on the basis of the determined image of the defect 150, 350, 550, 1450, possibly with the aid of a reference image, whether a repair of the defect 150, 350, 550, 1450 is necessary or not. If a repair is not necessary, the method jumps to block 1775, in which a decision is made as to whether the EUV mask 100, 300, 500 has further defects 150, 350, 550, 1450. If this is not the case, the method ends at block 1780 and the optical EUV component 100, 300, 500 is ready for use. If the optical EUV component 100, 300, 500 comprises an EUV mask 100, 300, 500, this is ready for use in a scanner. If there are further defects 150, 350, 550, 1450 on the EUV mask 100, 300, 500, the method jumps to block 1710, in which an image of the next defect 150, 350, 550, 1450 with an EUV AIMS TM is included.
  • the method proceeds to block 1725, in which with the device 700 or the repair device 700 an image of the defective position 150, 350, 550, 1450 or the Defect 150, 350, 550, 1450 is recorded in examination mode. Then at block 1725, in which with the device 700 or the repair device 700 an image of the defective position 150, 350, 550, 1450 or the Defect 150, 350, 550, 1450 is recorded in examination mode. Then at block 1725, in which with the device 700 or the repair device 700 an image of the defective position 150, 350, 550, 1450 or the Defect 150, 350, 550, 1450 is recorded in examination mode. Then at block 1725, in which with the device 700 or the repair device 700 an image of the defective position 150, 350, 550, 1450 or the Defect 150, 350, 550, 1450 is recorded in examination mode. Then at block 1725, in which with the device 700 or the repair device 700 an image of the defective position 150, 350, 550, 1450 or the Defect 150, 350, 550, 14
  • Block 1730 determines a form of repair for the defective item 150, 350, 550, 1450.
  • the form of repair for the defect 150, 350, 550, 1450 can be determined with the image recorded in step 1710 with a review tool, possibly in combination with the reference image.
  • the form of repair can be determined from the image or images recorded with the device 700 or repair device 1700 in the examination mode.
  • decision block 1735 it is decided whether the processing or repair of the defect 150, 350, 550, 1450 should lead to one of the local increases 1740 or a local decrease 1755 in the reflectivity of the EUV mask 100, 300, 500. If the defect 150, 350, 550, 1450 is a defect 150, 550 of excess material, excess absorber material of one or more pattern elements 140 or the excess material of the particle 550 is passed through at block 1750 with the photon beam 630, 840, 1030 Ablation from the EUV mask 100, 500 removed.
  • the multilayer structure 120 of the EUV mask 300 is processed with the photon beam 630, 840, 1030 at block 1755 in order to convert part of the multilayer structure 120 of the EUV mask 100, 300, 500 to remove or at least to reduce the planarity.
  • Both processing processes 1750 and 1755 forward the method to block 1765, in which an image of the repaired position 150, 350, 550, 1450 of the EUV mask 100, 300, 500 is recorded with the examination mode of the device 700.
  • decision block 1770 a decision is made as to whether the repair of the defect 150, 350, 550, 1450 is complete. If this is not the case, the process jumps to block
  • the method proceeds to decision block 1775.
  • decision block 1775 it is determined whether the EUV mask 100, 300, 500 has further defects 150, 350, 550, 1450. If so, the method branches to block 1710 and measures an image of the next defect. If there are no further defects 150, 350, 550, 1450 on the mask 100, 300, 500, the method ends at block 1780.
  • the flowchart 1800 of FIG. 18 shows essential steps of a method according to the invention for repairing at least one defect 150 , 350, 550,
  • the method begins at step 1810.
  • a photon beam is generated 610, 1010, 1020 generated in the EUV wavelength range and / or in the wavelength range of white X-rays.
  • the photon beam 610, 1030, 1130 is adjusted so that the at least one defect 150, 350, 550, 1450 is repaired by locally changing the optical component 100, 300, 500.
  • the method ends at block 1840.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention concerne un dispositif (700) de réparation d'au moins un défaut (150, 350, 550, 1450) d'un composant optique (100, 300, 500) pour le rayonnement ultraviolet extrême (EUV), le composant optique (100, 300, 500) comprenant un substrat (110) sur lequel est disposée une structure multicouche (120) et le dispositif comprenant au moins une source lumineuse (610, 1010, 1020), conçue (a) pour générer un faisceau de photons (605, 1030, 1130) dans la plage de longueurs d'onde EUV et/ou dans la plage de longueurs d'onde de rayonnement X doux et (b) pour réparer lesdits défauts (150, 350, 550, 1450) par variation locale du composant optique (100, 300, 500).
PCT/EP2021/052695 2020-02-06 2021-02-04 Dispositif et procédé de réparation d'un défaut d'un composant optique pour la plage de longueurs d'onde des ultraviolets extrêmes WO2021156380A1 (fr)

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DE102020201482.5A DE102020201482A1 (de) 2020-02-06 2020-02-06 Vorrichtung und Verfahren zum Reparieren eines Defekts einer optischen Komponente für den extrem ultravioletten Wellenlängenbereich
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