WO2021149349A1 - Élément d'imagerie et dispositif d'imagerie - Google Patents

Élément d'imagerie et dispositif d'imagerie Download PDF

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Publication number
WO2021149349A1
WO2021149349A1 PCT/JP2020/044014 JP2020044014W WO2021149349A1 WO 2021149349 A1 WO2021149349 A1 WO 2021149349A1 JP 2020044014 W JP2020044014 W JP 2020044014W WO 2021149349 A1 WO2021149349 A1 WO 2021149349A1
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Prior art keywords
photoelectric conversion
unit
pixel
light
conversion unit
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PCT/JP2020/044014
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English (en)
Japanese (ja)
Inventor
由香里 田口
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ソニーセミコンダクタソリューションズ株式会社
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Publication of WO2021149349A1 publication Critical patent/WO2021149349A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith

Definitions

  • the present disclosure relates to an image pickup device and an image pickup device. More specifically, the present invention relates to an image pickup device including a charge holding unit that holds a charge generated by photoelectric conversion, and an image pickup device that uses the image pickup device.
  • an image pickup device formed on a semiconductor substrate and having a photoelectric conversion unit that performs photoelectric conversion of incident light is used, in which a plurality of pixels are arranged in a two-dimensional lattice pattern.
  • the electric charge generated by the photoelectric conversion unit is accumulated during the exposure period, and the accumulated charge is transferred to the charge holding unit and held after the end of the exposure period.
  • An image signal is generated based on the retained charge and output from the pixel.
  • This exposure and image signal generation are performed simultaneously in the pixels arranged in one row of the plurality of pixels arranged in the image sensor, and the image signals generated by shifting the timing for each row are sequentially output. It is possible to generate an image signal for one screen.
  • Such an imaging method is called a rolling shutter. Since the exposure timing of this rolling shutter is different for each row, there is a problem that the image is distorted when a moving subject is imaged.
  • An imaging method called a global shutter is also used for this rolling shutter.
  • a second charge holding unit is further arranged on each pixel. At the time of imaging, all the pixels arranged in the image sensor are simultaneously exposed, and the generated charge is held in the second charge holding unit. The charges held in the second charge holding unit are sequentially transferred to the charge holding unit row by row to generate and output an image signal.
  • the charge holding portion and the second charge holding portion arranged in the pixel hold the charge after the exposure period.
  • the charge holding portion or the like is irradiated with incident light, photoelectric conversion occurs and an electric charge is generated. This generated charge is superimposed on the generated charge during the exposure period, causing noise in the image signal.
  • a light-shielding portion that shields the charge holding portion and the like is arranged on the pixel. Further, when the electric charge leaked from the photoelectric conversion unit flows into the charge holding unit or the like, noise is similarly generated.
  • the above-mentioned conventional technique has a problem that the aperture area of the pixel becomes small. Since the photoelectric conversion unit and the charge holding unit are juxtaposed on the light receiving surface, which is the surface on which the incident light of the pixel is irradiated, the ratio of the photoelectric conversion unit on the light receiving surface is reduced, and the substantial aperture area of the pixel is reduced. .. Therefore, there is a problem that the sensitivity of the pixel is lowered.
  • the present disclosure has been made in view of the above-mentioned problems, and an object of the present disclosure is to prevent a decrease in sensitivity of a pixel provided with a charge holding portion.
  • the present disclosure has been made to solve the above-mentioned problems, and the first aspect thereof is a photoelectric conversion unit arranged on a semiconductor substrate to perform photoelectric conversion of incident light from a subject, and the above-mentioned photoelectric conversion.
  • a separation unit that is adjacent to the unit and is formed in a wall shape that is obliquely inclined toward the side of the photoelectric conversion unit from the light receiving surface that is the surface of the semiconductor substrate that is irradiated with the incident light to separate the photoelectric conversion unit.
  • An image pickup device including an image signal generation unit that generates an image signal based on the photoelectric conversion.
  • the image signal generation unit is arranged adjacent to a side different from the photoelectric conversion unit in the separation unit and holds a charge holding unit that holds the charge generated by the photoelectric conversion. Further prepared, an image signal corresponding to the retained charge may be generated.
  • a light-shielding film that is arranged on the light-receiving surface of the semiconductor substrate to shield the charge-holding portion from light may be further provided.
  • the separation portion may be composed of the groove portion formed so as to be inclined at an angle.
  • the separation portion may be configured by arranging a filling member in the groove portion.
  • metal may be arranged as the filling member in the separating portion.
  • an insulating material may be arranged as the filling member.
  • the separation portion may be composed of the diagonally inclined wall-shaped semiconductor region.
  • a plurality of pixels including the photoelectric conversion unit, the separation unit, and the image signal generation unit may be arranged and configured.
  • the image signal generation unit is arranged adjacent to a side different from the photoelectric conversion unit in the separation unit and holds a charge holding unit that holds the charges generated by the photoelectric conversion. Further provided, an image signal corresponding to the retained charge is generated, and the separation unit is arranged between the photoelectric conversion unit and the charge holding unit arranged in the same pixel, and the pixels are different from each other. It may also be arranged between the photoelectric conversion unit and the charge holding unit arranged in.
  • the photoelectric conversion unit, the separation unit, and the image signal generation unit may be provided, and a phase difference pixel for detecting the phase difference by dividing the incident light from the subject into pupils may be further provided. good.
  • the retardation pixel may be divided into pupils by a retardation pixel light-shielding film that shields a part of the light-receiving surface of the semiconductor substrate.
  • the plurality of pixels are arranged on the light receiving surface side of the semiconductor substrate to collect the incident light on the photoelectric conversion unit, and the on-chip lens and the semiconductor.
  • An interlayer film arranged between the substrates and a light-shielding wall arranged on the interlayer film at the boundary of the pixels to block incident light may be further provided.
  • a second aspect of the present disclosure is a photoelectric conversion unit that is arranged on a semiconductor substrate and performs photoelectric conversion of incident light from a subject, and is adjacent to the photoelectric conversion unit and is irradiated with the incident light on the semiconductor substrate.
  • a separation unit that is formed in a wall shape that is obliquely inclined toward the side of the photoelectric conversion unit from the light receiving surface, and separates the photoelectric conversion unit, and an image signal generation that generates an image signal based on the photoelectric conversion. It is an image pickup apparatus including a unit and a processing circuit for processing the generated image signal.
  • the boundary of the photoelectric conversion part is formed obliquely in the thickness direction of the semiconductor substrate. It is assumed that the area of the photoelectric conversion part on the light receiving surface side of the semiconductor substrate is expanded and the area of the photoelectric conversion part on the surface different from the light receiving surface is reduced.
  • FIG. 1 is a diagram showing a configuration example of an image sensor according to an embodiment of the present disclosure.
  • the image sensor 1 in the figure includes a pixel array unit 10, a vertical drive unit 20, a column signal processing unit 30, and a control unit 40.
  • the pixel array unit 10 is configured by arranging the pixels 100 in a two-dimensional grid pattern.
  • the pixel 100 generates an image signal according to the irradiated light.
  • the pixel 100 has a photoelectric conversion unit that generates an electric charge according to the irradiated light.
  • the pixel 100 further has an image signal generation unit. This image signal generation unit generates an image signal based on the electric charge generated by the photoelectric conversion unit. The generation of the image signal is controlled by the control signal generated by the vertical drive unit 20 described later.
  • the signal lines 11 and 12 are arranged in the pixel array unit 10 in an XY matrix.
  • the signal line 11 is a signal line for transmitting a control signal of the image signal generation unit in the pixel 100, is arranged for each line of the pixel array unit 10, and is commonly wired to the pixel 100 arranged in each line.
  • the signal line 12 is a signal line for transmitting an image signal generated by the image signal generation unit of the pixel 100, is arranged for each row of the pixel array unit 10, and is common to the pixels 100 arranged in each row. Be wired. These photoelectric conversion unit and image signal generation unit are formed on the semiconductor substrate.
  • the vertical drive unit 20 generates a control signal of the image signal generation unit of the pixel 100.
  • the vertical drive unit 20 transmits the generated control signal to the pixel 100 via the signal line 11 in the figure.
  • the column signal processing unit 30 processes the image signal generated by the pixel 100.
  • the column signal processing unit 30 processes the image signal transmitted from the pixel 100 via the signal line 12 in the figure.
  • the processing in the column signal processing unit 30 corresponds to, for example, analog-to-digital conversion that converts an analog image signal generated in the pixel 100 into a digital image signal.
  • the image signal processed by the column signal processing unit 30 is output as an image signal of the image sensor 1.
  • the control unit 40 controls the entire image sensor 1.
  • the control unit 40 controls the image sensor 1 by generating and outputting a control signal for controlling the vertical drive unit 20 and the column signal processing unit 30.
  • the control signal generated by the control unit 40 is transmitted to the vertical drive unit 20 and the column signal processing unit 30 by the signal lines 41 and 42, respectively.
  • FIG. 2 is a diagram showing an example of a pixel circuit configuration according to the first embodiment of the present disclosure.
  • the figure is a circuit diagram showing the configuration of the pixel 100.
  • the pixel 100 in the figure includes a photoelectric conversion unit 101, a first charge holding unit 103, a second charge holding unit 102, and MOS transistors 104 to 109. Further, a signal line 11 and a signal line 12 composed of signal lines OFG, TX, TR, RST and SEL are wired to the pixel 100.
  • the signal lines OFG, TX, TR, RST, and SEL constituting the signal line 11 are signal lines for transmitting the control signal of the pixel 100. These signal lines are connected to the gate of the MOS transistor.
  • the MOS transistor By applying a voltage equal to or higher than the threshold value between the gate and the source to the MOS transistor via these signal lines, the MOS transistor can be made conductive.
  • the signal line 12 transmits the image signal generated by the pixel 100. Further, a power supply line Vdd is wired to the pixel 100 to supply power.
  • the anode of the photoelectric conversion unit 101 is grounded, and the cathode is connected to the respective sources of the MOS transistors 104 and 105.
  • the drain of the MOS transistor 104 is connected to the power supply line Vdd, and the gate is connected to the signal line OFG.
  • the drain of the MOS transistor 105 is connected to the source of the MOS transistor 106 and one end of the second charge holding portion 102. The other end of the second charge holding portion 102 is grounded.
  • the gate of the MOS transistor 105 is connected to the signal line TX, and the gate of the MOS transistor 106 is connected to the signal line TR.
  • the drain of the MOS transistor 106 is connected to the source of the MOS transistor 107, the gate of the MOS transistor 108, and one end of the first charge holding portion 103. The other end of the first charge holding portion 103 is grounded.
  • the gate of the MOS transistor 107 is connected to the signal line RST.
  • the drains of the MOS transistors 107 and 108 are commonly connected to the power supply line Vdd, and the source of the MOS transistors 108 is connected to the drain of the MOS transistor 109.
  • the source of the MOS transistor 109 is connected to the signal line 12, and the gate is connected to the signal line SEL.
  • the photoelectric conversion unit 101 generates and retains an electric charge according to the irradiated light as described above.
  • a photodiode can be used for the photoelectric conversion unit 101.
  • the MOS transistor 104 is a transistor that resets the photoelectric conversion unit 101. By applying a power supply voltage to the photoelectric conversion unit 101, the MOS transistor 104 discharges the electric charge held in the photoelectric conversion unit 101 to the power supply line Vdd and resets the MOS transistor 104. The reset of the photoelectric conversion unit 101 by the MOS transistor 104 is controlled by the signal transmitted by the signal line OFG.
  • the MOS transistor 105 is a transistor that transfers the electric charge generated by the photoelectric conversion of the photoelectric conversion unit 101 to the second charge holding unit 102.
  • the charge transfer in the MOS transistor 105 is controlled by the signal transmitted by the signal line TX.
  • the second charge holding unit 102 is a capacitor that holds the charge transferred by the MOS transistor 105.
  • the MOS transistor 106 is a transistor that transfers the charge held by the second charge holding unit 102 to the first charge holding unit 103.
  • the charge transfer in the MOS transistor 106 is controlled by the signal transmitted by the signal line TR.
  • the MOS transistor 108 is a transistor that generates a signal based on the electric charge held by the first electric charge holding unit 103.
  • the MOS transistor 109 is a transistor that outputs a signal generated by the MOS transistor 108 to the signal line 12 as an image signal.
  • the MOS transistor 109 is controlled by a signal transmitted by the signal line SEL.
  • the MOS transistor 107 is a transistor that resets the first charge holding unit 103 by discharging the charge held by the first charge holding unit 103 to the power supply line Vdd.
  • the reset by the MOS transistor 107 is controlled by the signal transmitted by the signal line RST.
  • the image signal generated by the pixel 100 in the figure can be generated as follows. First, the MOS transistor 104 is made conductive to reset the photoelectric conversion unit 101. The electric charge generated by the photoelectric conversion after the end of this reset is accumulated in the photoelectric conversion unit 101. After a lapse of a predetermined time, the MOS transistors 106 and 107 are made conductive to reset the second charge holding unit 102. Next, the MOS transistor 105 is made conductive. As a result, the electric charge generated in the photoelectric conversion unit 101 is transferred to the second charge holding unit 102 and held. The operations from the reset of the photoelectric conversion unit 101 to the transfer of electric charges by the MOS transistor 105 are performed simultaneously in all the pixels 100 arranged in the pixel array unit 10.
  • a global reset which is a simultaneous reset in all the pixels 100, and a simultaneous charge transfer in all the pixels 100 are executed.
  • a global shutter is realized.
  • the period from the reset of the photoelectric conversion unit 101 to the transfer of electric charge by the MOS transistor 105 corresponds to the exposure period.
  • the MOS transistor 107 is conducted again to reset the first charge holding unit 103.
  • the MOS transistor 106 is made conductive, and the charge held in the second charge holding unit 102 is transferred to the first charge holding unit 103 to hold it.
  • the MOS transistor 108 generates an image signal corresponding to the electric charge held by the first electric charge holding unit 103.
  • the image signal generated by the MOS transistor 108 is output to the signal line 12.
  • the image signal generation unit generates an image signal based on the electric charge generated by the photoelectric conversion unit 101.
  • the operations from the reset of the first charge holding unit 103 to the output of the image signal are sequentially performed for each pixel 100 arranged in the row of the pixel array unit 10. By outputting the image signals in the pixels 100 of all the rows of the pixel array unit 10, a frame which is an image signal for one screen is generated and output from the image sensor 1.
  • the second charge holding unit 102 is used to temporarily hold the charge generated by the photoelectric conversion unit 101 when performing the global shutter.
  • FIG. 3 is a diagram showing a configuration example of pixels according to the first embodiment of the present disclosure.
  • FIG. 3 is a plan view showing a configuration example of the pixel 100, and is a diagram schematically showing the arrangement of elements such as the photoelectric conversion unit 101 described in FIG. Further, the figure is a diagram showing the configuration of a light receiving surface which is a surface on which the incident light of the pixel 100 is irradiated.
  • the solid rectangle represents the gates 121 to 126 of the MOS transistors 104 to 109 described in FIG.
  • the rectangular long and short dash line represents a semiconductor region formed on the semiconductor substrate (semiconductor substrate 110 described later).
  • the shaded area represents the light-shielding film 140.
  • the dotted line represents the end portions of the separation portions 141 and 143 arranged on the semiconductor substrate.
  • the rectangle with hatched diagonal lines represents the opening 149 of the separation portion 141, which will be described later.
  • the semiconductor region 111 of the photoelectric conversion unit 101 is arranged on the semiconductor substrate 110 in the center.
  • the semiconductor region 112 of the second charge holding portion 102 is arranged adjacent to the upper side of the semiconductor region 111 in the figure.
  • the gate 122 of the MOS transistor 105 described with reference to FIG. 2 is arranged in the vicinity of the semiconductor region 112.
  • the MOS transistor 105 is a MOS transistor having semiconductor regions 111 and 112 as a source region and a drain region, respectively.
  • the gate 123 of the MOS transistor 106 is arranged adjacent to the right side of the semiconductor region 112 in the figure, and the semiconductor region 113 of the first charge holding unit 103 is arranged adjacent to the gate 123.
  • the MOS transistor 106 is a MOS transistor having semiconductor regions 112 and 113 as a source region and a drain region, respectively.
  • the gate 124 of the MOS transistor 107 is arranged adjacent to the lower side of the semiconductor region 113 in the figure, and the semiconductor region 114 is arranged adjacent to the gate 124.
  • the MOS transistor 107 is a MOS transistor having semiconductor regions 113 and 114 as a source region and a drain region, respectively.
  • the gate 125 of the MOS transistor 108 is arranged adjacent to the lower side of the semiconductor region 114 in the figure, and the semiconductor region 115 is arranged adjacent to the gate 125.
  • the MOS transistor 108 is a MOS transistor having semiconductor regions 114 and 115 as a drain region and a source region, respectively.
  • the gate 126 of the MOS transistor 109 is arranged adjacent to the lower side of the semiconductor region 115 in the figure, and the semiconductor region 116 is arranged adjacent to the gate 126.
  • the MOS transistor 109 is a MOS transistor having semiconductor regions 115 and 116 as a drain region and a source region, respectively.
  • the semiconductor region 113 and the gate 125 of the MOS transistor 108 are connected by wiring (not shown). Further, the gate 121 of the MOS transistor 104 is arranged adjacent to the left side of the semiconductor region 111 in the figure, and the semiconductor region 117 is arranged adjacent to the lower side of the gate 121.
  • the MOS transistor 104 is a MOS transistor having semiconductor regions 111 and 117 as a source region and a drain region, respectively.
  • the light-shielding film 140 shields the second charge-holding unit 102 and the first charge-holding unit 103, and is a semiconductor substrate in a region where the second charge-holding unit 102 and the first charge-holding unit 103 are arranged. It is arranged adjacent to the light receiving surface side of 110. Further, the separation units 141 and 143 separate the photoelectric conversion units 101. The separation portions 141 and 143 are formed in a wall shape extending from the bottom surface of the light-shielding film 140 to the respective broken line regions shown in the figure. Details of the configurations of the separation portions 141 and 143 and the light-shielding film 140 will be described later.
  • the shape of the semiconductor region 111 or the like in the figure represents the shape in the vicinity of the gate 122 or the like.
  • Such pixels 100 are arranged in a two-dimensional grid pattern to form the pixel array unit 10.
  • the first charge holding unit 103 in the figure is used in common with the pixel 100 adjacent to the right side of the pixel 100 in the figure.
  • the MOS transistor 104 in the figure is used in common with the pixel 100 adjacent to the left side of the pixel 100 in the figure.
  • the elements other than the photoelectric conversion unit 101 constitute an image signal generation unit. This image signal generation unit generates an image signal according to the charges held by the second charge holding unit 102 and the first charge holding unit 103.
  • FIG. 4 is a cross-sectional view showing a configuration example of a pixel according to the first embodiment of the present disclosure.
  • FIG. 3 is a schematic cross-sectional view showing a configuration example of the pixel 100, and is a cross-sectional view taken along the line aa'in FIG.
  • the pixel 100 includes a semiconductor substrate 110, a wiring region 130, a light-shielding film 140, separation portions 141 and 143, a flattening film 150, a color filter 160, and an on-chip lens 170.
  • the semiconductor substrate 110 is a semiconductor substrate on which the diffusion region of the MOS transistor of the photoelectric conversion unit 101 and the image signal generation unit is arranged.
  • the semiconductor substrate 110 can be made of, for example, silicon (Si).
  • the photoelectric conversion unit 101 and the like are arranged in the well region formed on the semiconductor substrate 110.
  • the semiconductor substrate 110 in the figure is assumed to be configured in a p-type well region. By forming an n-type semiconductor region in this p-type well region, the photoelectric conversion unit 101 and the like can be arranged.
  • the photoelectric conversion unit 101 is composed of an n-type semiconductor region 111.
  • the photodiode composed of the pn junction between the n-type semiconductor region 111 and the surrounding p-type well region corresponds to the photoelectric conversion unit 101.
  • the second charge holding unit 102 is composed of an n-type semiconductor region 112.
  • the MOS transistor 105 is composed of n-type semiconductor regions 111 and 112 and a gate 122.
  • the gate 122 is arranged in the wiring area 130 described later.
  • the wiring area 130 is an area where wiring is arranged on the surface side of the semiconductor substrate 110 to transmit signals of elements such as the photoelectric conversion unit 101 of the pixel 100.
  • the wiring area 130 includes a wiring layer 132 and an insulating layer 131.
  • the wiring layer 132 transmits signals from elements such as the photoelectric conversion unit 101.
  • the wiring layer 132 can be made of a metal such as copper (Cu) or tungsten (W).
  • the insulating layer 131 insulates the wiring layer 132.
  • the insulating layer 131 can be made of an insulating material such as silicon oxide (SiO 2).
  • the above-mentioned gate 122 is also arranged in the wiring area 130.
  • the insulating layer 131 between the gate 122 and the semiconductor substrate 110 corresponds to a gate insulating film.
  • the light-shielding film 140 blocks incident light.
  • the light-shielding film 140 is arranged adjacent to a light-receiving surface, which is the back surface of the semiconductor substrate 110, and shields the second charge-holding portion 102 and the first charge-holding portion 103 from light-shielding.
  • the light-shielding film 140 can be made of a metal such as W or aluminum (Al).
  • Separation units 141 and 143 separate the photoelectric conversion unit 101.
  • the separation units 141 and 143 are formed in a wall shape that is obliquely inclined with respect to the semiconductor substrate 110, and separates the photoelectric conversion unit 101.
  • the separation portions 141 and 143 are formed in an inverted V shape in which the end portion on the back surface side of the semiconductor substrate 110 is adjacent to the light shielding film 140 and is directed toward the front surface side of the semiconductor substrate 110.
  • the separation unit 141 is arranged on the semiconductor substrate 110 between the photoelectric conversion unit 101 included in the same pixel 100, the second charge holding unit 102, and the first charge holding unit 103, and is formed on the semiconductor substrate 110. It is configured to be embedded in the groove 142.
  • the separation unit 143 is arranged on the semiconductor substrate 110 between the photoelectric conversion unit 101, the second charge holding unit 102, and the first charge holding unit 103 included in the different pixels 100, and the groove portion formed in the semiconductor substrate 110. It is embedded in 144 and arranged.
  • the separation portions 141 and 143 can be made of a filling member embedded in the grooves 142 and 144, respectively, for example, a metal such as W or Al. Further, the separation portions 141 and 143 can be formed of the same member as the light-shielding film 140, and can be formed at the same time as the light-shielding film 140. The light-shielding film 140, the separation unit 141, and the separation unit 143 shield the second charge-holding unit 102 and the first charge-holding unit 103 from light. Further, the separation units 141 and 143 separate the second charge holding unit 102 and the first charge holding unit 103 from the photoelectric conversion unit 101.
  • the opening 149 formed in the separation unit 141 is a path for transferring charges from the photoelectric conversion unit 101 to the second charge holding unit 102, and is a region in which the channel of the MOS transistor 105 is formed.
  • an insulating material such as SiO 2 or SiN can be used as the filling member described above.
  • the semiconductor region having a high impurity concentration can be arranged on the semiconductor substrate 110 around the separation portions 141 and 143.
  • the semiconductor region having a high impurity concentration By arranging the semiconductor region having a high impurity concentration, the electric charge emitted from the interface state of the wall surfaces of the grooves 142 and 144 can be captured, and the influence of the electric charge caused by the interface state can be reduced.
  • the separation ability of the photoelectric conversion unit 101 can be further improved.
  • the flattening film 150 flattens the back surface side of the semiconductor substrate.
  • the flattening film 150 flattens the surface on which the color filter 160, which will be described later, is arranged. Further, the flattening film 150 further protects the back surface side of the semiconductor substrate 110.
  • the flattening film 150 can be made of, for example, an oxide such as SiO 2 or a nitride such as silicon nitride (SiN).
  • a fixed charge film (fixed charge film 151, which will be described later) may be arranged adjacent to the back surface side of the semiconductor substrate 110.
  • the fixed charge film 151 is a film composed of a dielectric having a negative fixed charge. By arranging the fixed charge film 151, the influence of the trap level formed near the interface of the semiconductor substrate 110 can be reduced.
  • a film of hafnium oxide (HfO 2 ) can be used for this fixed charge film 151.
  • an insulating film (insulating film 152 described later) that insulates the separation portions 141 and 143 can also be arranged.
  • the insulating film 152 can be made of, for example, SiO 2 .
  • the color filter 160 is an optical filter that transmits incident light having a predetermined wavelength among the incident light.
  • As the color filter 160 three types of color filters 160 that transmit red light, green light, and blue light can be used. One of the three types of color filters 160 is arranged in each pixel 100.
  • the on-chip lens 170 is a lens arranged for each pixel 100 and condensing the incident light on the photoelectric conversion unit 101.
  • the on-chip lens 170 can be made of an inorganic material such as SiN or an organic material such as an acrylic resin.
  • the pixel 100 in the figure corresponds to a back-illuminated image sensor that irradiates the back surface side of the semiconductor substrate 110 with incident light.
  • the second charge holding part 102 and the like can be light-shielded.
  • the light emitted to the second charge holding unit 102 or the like is called parasitic light.
  • parasitic light In order to reduce the noise of the image signal, it is necessary to reduce this parasitic light.
  • the influence of parasitic light becomes large. This is because the time for holding the electric charge in the second charge holding unit 102 or the like is longer than that for the rolling shutter.
  • the sensitivity of the parasitic light incident on the second charge holding unit 102 is called PLS (Parasitic Light Sensitivity), and is strictly controlled in the image sensor that employs the global shutter.
  • This PLS is defined by the ratio of the charge (output) generated by the second charge holding unit 102 to the charge (output) generated by the photoelectric conversion unit 101. PLS can be improved by reducing parasitic light.
  • PLS can also be improved by increasing the output of the photoelectric conversion unit 101. That is, the PLS can be improved by improving the sensitivity of the photoelectric conversion unit 101.
  • the sensitivity can be improved, for example, by widening the region of the photoelectric conversion unit 101 in the pixel 100. This is because the ratio of the region contributing to photoelectric conversion on the light receiving surface can be increased.
  • the separation units 141 and 143 are arranged obliquely to widen the region of the photoelectric conversion unit 101 on the light receiving surface.
  • incident light is applied to the photoelectric conversion unit 101 through an opening in the light receiving surface (back surface side of the semiconductor substrate 110) where the light shielding film 140 is not arranged.
  • the separation portions 141 and 143 diagonally to secure an area for arranging the second charge holding portion 102 and the like on the surface side of the semiconductor substrate 110, the region of the light-shielding film 140 is narrowed and the opening is widened. Can be done.
  • a photographing lens that forms an image of a subject on an image sensor 1 is arranged. The optical axis of this photographing lens is set at the center of the pixel array unit 10 of the image sensor 1.
  • the light from the subject is obliquely incident on the pixels 100 arranged on the peripheral edge of the pixel array unit 10.
  • the opening is narrow and the area of the light-shielding film 140 is relatively large, oblique incident light is collected in the region of the light-shielding film 140 and the sensitivity is lowered.
  • the opening of the light-shielding film 140 can be widened, the incident light is not hindered from being incident on the photoelectric conversion unit 101 even when the incident light is obliquely incident. It is possible to prevent a decrease in sensitivity. Therefore, it is not necessary to perform pupil correction.
  • the angle of inclination of the separation portions 141 and 143 can be adjusted according to the angle of incidence of the incident light on the pixel 100. Separation portions 141 and 143 may be configured at different angles between the pixel 100 arranged in the central portion of the pixel array portion 10 and the pixel 100 arranged in the peripheral portion.
  • the region of the light-shielding film 140 can be narrowed, the amount of light reflected by the light-shielding film 140 can be reduced, and the occurrence of flare and the like can be prevented.
  • the incident light that has passed through the end portion of the on-chip lens 170 is obliquely incident on the light receiving surface of the semiconductor substrate 110.
  • the obliquely arranged separation portions 141 and 143 act as a waveguide and can guide the obliquely incident light. The sensitivity can be further improved.
  • FIG. 9 are diagrams showing an example of a pixel manufacturing method according to the first embodiment of the present disclosure.
  • 5 to 9 are diagrams showing an example of a manufacturing process of the image pickup device 1.
  • a well region is formed on the semiconductor substrate 110 to form an n-type semiconductor region 111 (not shown) or the like.
  • the wiring region 130 is formed on the surface side of the semiconductor substrate 110 (A in FIG. 5).
  • the resist 301 is placed on the back surface side of the semiconductor substrate 110.
  • an opening 302 is formed in a region forming the grooves 142 and 144 (B in FIG. 5).
  • anisotropic dry etching is performed using the resist 301 as a mask.
  • This dry etching is performed by injecting the ions 303 of the reactive gas obliquely in the direction on the left side of the paper surface with respect to the vertical direction on the back surface of the semiconductor substrate 110. This can be done, for example, by tilting the semiconductor substrate 110 in the upper right direction of the paper surface with respect to the incident direction of the ions 303.
  • the groove portion 142 inclined to the left side with respect to the back surface side of the semiconductor substrate 110 is formed (C in FIG. 6).
  • the ions 303 are obliquely incident on the right side of the paper surface with respect to the vertical direction on the back surface of the semiconductor substrate 110 to form the groove portion 144 (D in FIG. 6).
  • the fixed charge film 151 is arranged on the back surface side of the semiconductor substrate 110. At this time, the fixed charge film 151 is also arranged on the wall surfaces of the grooves 142 and 144. This can be done, for example, by CVD (Chemical Vapor Deposition) (E in FIG. 7).
  • CVD Chemical Vapor Deposition
  • the insulating film 152 is arranged on the back surface side of the semiconductor substrate 110. At this time, the insulating film 152 is also arranged on the wall surfaces of the grooves 142 and 144. This can be done, for example, by CVD (F in FIG. 7).
  • a metal film 304 such as W is arranged on the back surface side of the semiconductor substrate 110. This can be done, for example, by CVD. At this time, by arranging the metal film 304 also in the groove portions 142 and 144, the separation portions 141 and 143 can be formed (G in FIG. 8).
  • the metal film 304 is etched to form the light-shielding film 140. This can be done, for example, by arranging a resist having an opening in the region from which the light-shielding film 140 is removed adjacent to the metal film 304, and using this resist as a mask to etch the metal film 304 (). H in FIG. 8).
  • the flattening film 150 is arranged on the back surface side of the semiconductor substrate 110 to flatten the back surface side of the semiconductor substrate 110 (I in FIG. 9). After that, by arranging the color filter 160 and the on-chip lens 170, the pixel 100 can be formed and the image sensor 1 can be manufactured.
  • the separation portions 141 and 143 are inclined obliquely with respect to the thickness direction of the semiconductor substrate 110, whereby the photoelectric light on the light receiving surface of the pixel 100 is obtained.
  • the area of the conversion unit 101 can be widened. This makes it possible to prevent a decrease in the sensitivity of the pixel 100.
  • the separation portions 141 and 143 are arranged at the pixel 100 so as to be inclined with respect to the semiconductor substrate 110.
  • one of the separation portions 141 and 143 is arranged so as to be inclined with respect to the semiconductor substrate 110. Different from the form.
  • FIG. 10 is a cross-sectional view showing a configuration example of a pixel according to the second embodiment of the present disclosure.
  • the figure is a schematic cross-sectional view showing a configuration example of the pixel 100.
  • the description of the semiconductor region and the like in the semiconductor substrate 110 is omitted.
  • the separation section 143 in the figure is configured to have a shape perpendicular to the back surface of the semiconductor substrate 110.
  • the separation portion 141 in the figure is configured to have an obliquely inclined shape like the separation portion 141 in FIG. As a result, the region of the photoelectric conversion unit 101 on the light receiving surface can be widened, and the sensitivity of the pixel 100 can be improved.
  • FIG. 11 is a cross-sectional view showing another configuration example of the pixel according to the second embodiment of the present disclosure.
  • FIG. 6 is a schematic cross-sectional view showing another configuration example of the pixel 100.
  • the separation portion 141 in the figure is configured to have a shape perpendicular to the surface on the back side of the semiconductor substrate 110, and the separation portion 143 in the figure is configured to have an obliquely inclined shape. Similar to the pixel 100 in FIG. 10, the region of the photoelectric conversion unit 101 on the light receiving surface can be widened, and the sensitivity of the pixel 100 can be improved.
  • the image sensor 1 of the second embodiment of the present disclosure is configured so that either one of the separation portions 141 and 143 is obliquely inclined. This makes it possible to simplify the manufacturing process of the image sensor 1.
  • the image sensor 1 of the first embodiment described above the pixels 100 that generate an image signal are arranged in the pixel array unit 10.
  • the image sensor 1 of the third embodiment of the present disclosure is different from the above-described first embodiment in that phase difference pixels for detecting the phase difference of the subject are further arranged.
  • FIG. 12 is a cross-sectional view showing a configuration example of a pixel according to a third embodiment of the present disclosure.
  • FIG. 3 is a schematic cross-sectional view showing a configuration example of the retardation pixels 200 (phase difference pixels 200a and 200b).
  • the phase difference pixel 200 is a pixel for detecting the phase difference of the subject.
  • the phase difference of the subject is used for autofocus, which will be described later.
  • the retardation pixel 200 is different from the pixel 100 in that the retardation pixel light-shielding film 145 (phase-difference pixel light-shielding film 145a and 145b) is arranged instead of the light-shielding film 140.
  • the retardation pixel light-shielding film 145 is a light-shielding film having a shape that covers half of the light-receiving surface of the photoelectric conversion unit 101.
  • the phase difference pixel 200a in the figure represents a phase difference pixel in which a phase difference pixel light-shielding film 145a that shields the right side of the light receiving surface is arranged. Since the right side of the light receiving surface is shielded from light, light from the subject transmitted through the left side of the photographing lens is incident on the phase difference pixel 200a.
  • the retardation pixel 200b in the figure represents a retardation pixel in which the retardation pixel light-shielding film 145b that shields the left side of the light receiving surface is arranged. Since the left side of the light receiving surface is shielded from light, light from the subject transmitted through the right side of the photographing lens is incident on the phase difference pixel 200b.
  • a plurality of such retardation pixels 200a and 200b are arranged in the pixel array unit 10.
  • the deviation between the image of the subject composed of the image signals of the plurality of phase difference pixels 200a and the image of the subject composed of the image signals of the plurality of phase difference pixels 200b corresponds to the phase difference of the subject.
  • the focal position of the photographing lens with respect to the subject can be acquired.
  • the opening of these retardation pixels 200 is limited to half the area of the pixels 100 by the retardation pixel light-shielding film 145, and the sensitivity is lowered.
  • the separation units 141 and 143 By arranging the separation units 141 and 143 in the figure, the opening area of the photoelectric conversion unit 101 can be increased, and the decrease in sensitivity of the retardation pixel 200 can be reduced.
  • the decrease in sensitivity of the retardation pixel 200 can be reduced by arranging the separation units 141 and 143.
  • the image sensor 1 of the first embodiment described above the semiconductor substrate 110 at the boundary between adjacent pixels 100 is separated by the separation unit 143.
  • the image sensor 1 of the fourth embodiment of the present disclosure is different from the above-described first embodiment in that the flattening film 150 and the color filter 160 are further separated at the boundary of adjacent pixels 100. different.
  • FIG. 13 is a cross-sectional view showing a configuration example of a pixel according to a fourth embodiment of the present disclosure. Similar to FIG. 4, FIG. 4 is a schematic cross-sectional view showing a configuration example of the pixel 100. It differs from the pixel 100 in FIG. 4 in that a light-shielding wall 180 is further arranged at the boundary of the pixel 100.
  • the light-shielding wall 180 is arranged on the interlayer film at the boundary of the pixel 100 to block the incident light.
  • the interlayer film is a film arranged between the semiconductor substrate 110 of the pixel 100 and the on-chip lens 170.
  • the flattening film 150 and the color filter 160 correspond to the interlayer film.
  • a protective film formed of the same material film as the on-chip lens 170 and arranged between the on-chip lens 170 and the color filter 160 also corresponds to an interlayer film.
  • the light-shielding wall 180 blocks incident light obliquely incident from the adjacent pixel 100. As a result, crosstalk can be reduced.
  • the light-shielding wall 180 blocks light that is reflected by the separation portions 141 and 143 and is obliquely emitted from the back surface side of the semiconductor substrate 110 to the outside of the pixel 100. Since the separation portions 141 and 143 are arranged at an oblique angle, the incident light of the pixel 100 may be returned to the light receiving surface side when reflected by the separation portions 141 and 143. The light-shielding wall 180 blocks the light returned to the light-receiving surface side. Thereby, the occurrence of flare and the like can be reduced.
  • the light-shielding wall 180 can be configured by arranging a metal such as W in a groove formed in the interlayer film.
  • the image sensor 1 of the fourth embodiment of the present disclosure shields the light reflected to the outside of the pixel 100 by arranging the light-shielding wall 180. Thereby, the occurrence of flare and the like can be reduced.
  • the image sensor 1 of the first embodiment described above is configured by arranging filling members in grooves 142 and 144 formed in the semiconductor substrate 110.
  • the image sensor 1 of the fifth embodiment of the present disclosure is different from the above-described first embodiment in that it includes a separation portion composed of a solid phase diffusion layer.
  • FIG. 14 is a cross-sectional view showing a configuration example of a pixel according to a fifth embodiment of the present disclosure. Similar to FIG. 4, FIG. 4 is a schematic cross-sectional view showing a configuration example of the pixel 100. It differs from the pixel 100 in FIG. 4 in that the separation portions 146 and 148 are arranged instead of the separation portions 141 and 143.
  • Separation units 146 and 148 are semiconductor regions formed by diffusing impurities by solid phase diffusion.
  • the separation portions 146 and 148 are formed in a p-type which is the same conductive type as the well region and have a relatively high impurity concentration to separate the semiconductor substrate 110.
  • the separation unit 146 is arranged on the semiconductor substrate 110 between the photoelectric conversion unit 101 included in the same pixel 100, the second charge holding unit 102, and the first charge holding unit 103.
  • the separation unit 148 is arranged on the semiconductor substrate 110 between the photoelectric conversion unit 101 included in the different pixels 100, the second charge holding unit 102, and the first charge holding unit 103.
  • the separation portions 146 and 148 formed by solid phase diffusion By arranging the separation portions 146 and 148 formed by solid phase diffusion, the potential can be easily formed along the diagonally inclined separation portions 146 and 148, and the regions of the separation portions 146 and 148 are narrowed. can do. As a result, the area of the photoelectric conversion unit 101 can be widened. Further, by arranging the semiconductor region having a high impurity concentration, the influence of electric charge caused by the interface state of the grooves 142 and 144 can be reduced.
  • Separations 146 and 148 can be formed by the following procedure. First, oblique groove portions 142 and 144 are formed on the back surface side of the semiconductor substrate 110. Next, a solid thin film containing a large amount of impurities is placed on the side walls of the grooves 142 and 144 and heated. As a result, impurities of the solid thin film can be diffused into the semiconductor substrate 110, and separation portions 146 and 148, which are semiconductor regions having a high impurity concentration, can be formed on the semiconductor substrate 110 around the grooves 142 and 144. As the solid thin film, a SiO 2 film containing a large amount of impurities can be used.
  • boron (B), which is an acceptor, can be used as an impurity in the solid thin film.
  • phosphorus (P) which is a donor, is contained in the solid thin film.
  • an insulating film such as a fixed charge film or SiO 2 is formed on the side walls of the grooves 142 and 144.
  • the filling membranes 147 and 149 are arranged.
  • the filling membranes 147 and 149 can be made of, for example, a metal such as W.
  • the photoelectric conversion unit 101 can be separated by arranging the separation units 146 and 148 formed by solid phase diffusion.
  • the image sensor 1 of the first embodiment described above has a second charge holding unit 102 arranged therein.
  • the image sensor 1 of the sixth embodiment of the present disclosure is different from the above-described first embodiment in that the second charge holding unit 102 is omitted.
  • FIG. 15 is a diagram showing an example of a pixel circuit configuration according to a sixth embodiment of the present disclosure.
  • FIG. 2 is a circuit diagram showing the configuration of the pixel 100, as in FIG. 2. It differs from pixel 100 in FIG. 2 in that the second charge holding unit 102, MOS transistors 104 and 105, and signal lines OFG and TX are omitted.
  • the cathode of the photoelectric conversion unit 101 is connected to the source of the MOS transistor 106. Since the wiring other than this is the same as that of the pixel 100 in FIG. 3, the description thereof will be omitted. Pixel 100 in the figure performs a rolling shutter type imaging.
  • FIG. 16 is a diagram showing a configuration example of a pixel according to a sixth embodiment of the present disclosure. Similar to FIG. 2, the figure is a plan view showing a configuration example of the pixel 100. It differs from the pixel 100 in FIG. 2 in that the MOS transistors 107 to 109 are separated from the photoelectric conversion unit 101 by the separation units 141 and 143.
  • the semiconductor region 113 of the first charge holding unit 103 is arranged adjacent to the upper side of the semiconductor region 111 of the photoelectric conversion unit 101.
  • the MOS transistor 106 is a MOS transistor having a semiconductor region 111 and a semiconductor region 113 as a source region and a drain region, respectively.
  • the gate 123 of the MOS transistor 106 is arranged at the opening 149 of the separation portion 141.
  • FIG. 17 is a cross-sectional view showing a configuration example of a pixel according to a sixth embodiment of the present disclosure. Similar to FIG. 4, FIG. 4 is a schematic cross-sectional view showing a configuration example of the pixel 100. It differs from the pixel 100 in FIG. 4 in that the second charge holding unit 102 is omitted and the MOS transistor 106 is arranged between the photoelectric conversion unit 101 and the first charge holding unit 103.
  • the first charge holding unit 103 and the image signal generating unit are separated by the separation units 141 and 143 and are shielded from light. Since the separation portions 141 and 143 are arranged at an oblique inclination, the region of the photoelectric conversion portion 101 can be widened.
  • the image sensor 1 of the sixth embodiment of the present disclosure can widen the region of the photoelectric conversion unit 101 in the pixel 100 that performs the rolling shutter, and can prevent a decrease in sensitivity. ..
  • the technology according to the present disclosure can be applied to various products.
  • the present technology may be realized as an image pickup device mounted on an image pickup device such as a camera.
  • FIG. 18 is a block diagram showing a schematic configuration example of a camera which is an example of an imaging device to which the present technology can be applied.
  • the camera 1000 in the figure includes a lens 1001, an image pickup element 1002, an image pickup control unit 1003, a lens drive unit 1004, an image processing unit 1005, an operation input unit 1006, a frame memory 1007, a display unit 1008, and the like.
  • a recording unit 1009 is provided.
  • the lens 1001 is a photographing lens of the camera 1000.
  • the lens 1001 collects light from the subject and causes the light to be incident on the image pickup device 1002 described later to form an image of the subject.
  • the image sensor 1002 is a semiconductor element that captures light from a subject focused by the lens 1001.
  • the image sensor 1002 generates an analog image signal corresponding to the irradiated light, converts it into a digital image signal, and outputs the signal.
  • the image pickup control unit 1003 controls the image pickup in the image pickup device 1002.
  • the image pickup control unit 1003 controls the image pickup device 1002 by generating a control signal and outputting the control signal to the image pickup device 1002. Further, the image pickup control unit 1003 can perform autofocus on the camera 1000 based on the image signal output from the image pickup device 1002.
  • the autofocus is a system that detects the focal position of the lens 1001 and automatically adjusts it.
  • a method (image plane phase difference autofocus) in which the image plane phase difference is detected by the phase difference pixels arranged in the image sensor 1002 to detect the focal position can be used. It is also possible to apply a method (contrast autofocus) of detecting the position where the contrast of the image is highest as the focal position.
  • the image pickup control unit 1003 adjusts the position of the lens 1001 via the lens drive unit 1004 based on the detected focus position, and performs autofocus.
  • the image pickup control unit 1003 can be configured by, for example, a DSP (Digital Signal Processor) equipped with firmware.
  • DSP Digital Signal Processor
  • the lens driving unit 1004 drives the lens 1001 based on the control of the imaging control unit 1003.
  • the lens driving unit 1004 can drive the lens 1001 by changing the position of the lens 1001 using a built-in motor.
  • the image processing unit 1005 processes the image signal generated by the image sensor 1002. This processing includes, for example, demosaic to generate an image signal of a color that is insufficient among the image signals corresponding to red, green, and blue for each pixel, noise reduction to remove noise of the image signal, and coding of the image signal. Applicable.
  • the image processing unit 1005 can be configured by, for example, a microcomputer equipped with firmware.
  • the operation input unit 1006 receives the operation input from the user of the camera 1000.
  • a push button or a touch panel can be used for the operation input unit 1006.
  • the operation input received by the operation input unit 1006 is transmitted to the image pickup control unit 1003 and the image processing unit 1005. After that, processing according to the operation input, for example, processing such as imaging of the subject is activated.
  • the frame memory 1007 is a memory that stores a frame that is an image signal for one screen.
  • the frame memory 1007 is controlled by the image processing unit 1005 and holds frames in the process of image processing.
  • the display unit 1008 displays the image processed by the image processing unit 1005.
  • a liquid crystal panel can be used.
  • the recording unit 1009 records the image processed by the image processing unit 1005.
  • a memory card or a hard disk can be used for the recording unit 1009.
  • the cameras to which this disclosure can be applied have been described above.
  • the present technology can be applied to the image pickup device 1002 among the configurations described above.
  • the image pickup device 1 described with reference to FIG. 1 can be applied to the image pickup device 1002.
  • the image processing unit 1005 is an example of the processing circuit described in the claims.
  • the camera 1000 is an example of the image pickup apparatus described in the claims.
  • the technology according to the present disclosure may be applied to other devices such as a monitoring device.
  • the present disclosure can be applied to a semiconductor device in the form of a semiconductor module in addition to an electronic device such as a camera.
  • the technique according to the present disclosure can be applied to an image pickup module which is a semiconductor module in which the image pickup element 1002 and the image pickup control unit 1003 of FIG. 18 are enclosed in one package.
  • the configuration of the pixel 100 of the second embodiment can be combined with other embodiments. Specifically, the separation sections 141 and 143 of FIGS. 10 and 11 can be applied to the separation sections 141 and 143 of FIGS. 12 to 14 and 17.
  • the configuration of the pixel 100 of the fourth embodiment can be combined with other embodiments.
  • the light-shielding wall 180 of FIG. 13 can be applied to the pixels 100 of FIGS. 10 to 12, 14 and 17.
  • the configuration of the pixel 100 of the fifth embodiment can be combined with other embodiments. Specifically, the separation units 146 and 148 of FIG. 14 can be applied to the pixels 100 of FIGS. 10 to 13 and 17.
  • the present technology can have the following configurations.
  • a photoelectric conversion unit arranged on a semiconductor substrate and performing photoelectric conversion of incident light from a subject,
  • the photoelectric conversion unit is separated by being formed in a wall shape adjacent to the photoelectric conversion unit and obliquely inclined toward the side of the photoelectric conversion unit from the light receiving surface which is the surface of the semiconductor substrate on which the incident light is irradiated.
  • An image pickup device including a separation unit for generating an image signal and an image signal generation unit for generating an image signal based on the photoelectric conversion.
  • the image signal generation unit is further provided with a charge holding unit which is arranged adjacent to a side different from the photoelectric conversion unit in the separation unit and holds the charge generated by the photoelectric conversion, and is held.
  • the image pickup device which generates an image signal according to the electric charge.
  • (4) The image pickup device any one of (1) to (3) above, wherein the separation portion is composed of a groove portion formed so as to be inclined at an angle.
  • (6) The image pickup device according to (5) above, wherein the separation portion is a metal in which a metal is arranged as the filling member.
  • the image pickup device is the image pickup device in which an insulator is arranged as the filling member.
  • the image pickup device is composed of the obliquely inclined wall-shaped semiconductor region.
  • the image pickup device according to any one of (1) to (8), wherein a plurality of pixels including the photoelectric conversion unit, the separation unit, and the image signal generation unit are arranged.
  • the image signal generation unit is further provided with a charge holding unit which is arranged adjacent to a side different from the photoelectric conversion unit in the separation unit and holds the charge generated by the photoelectric conversion, and is held.
  • the separation unit is arranged between the photoelectric conversion unit and the charge holding unit arranged in the same pixel, and also between the photoelectric conversion unit and the charge holding unit arranged in different pixels.
  • the imaging element according to (9) above which is arranged.
  • the image pickup according to (9) above further comprising a photoelectric conversion unit, a separation unit, and an image signal generation unit, and further including a phase difference pixel that divides the incident light from the subject into pupils to detect a phase difference. element.
  • the plurality of pixels are arranged between the on-chip lens arranged on the light receiving surface side of the semiconductor substrate and condensing the incident light on the photoelectric conversion unit, and between the on-chip lens and the semiconductor substrate.
  • the image pickup device according to any one of (9) to (12), further comprising an interlayer film and a light-shielding wall arranged on the interlayer film at the boundary of the pixels to block incident light.
  • a photoelectric conversion unit arranged on a semiconductor substrate and performing photoelectric conversion of incident light from a subject The photoelectric conversion unit is separated by being formed in a wall shape adjacent to the photoelectric conversion unit and obliquely inclined toward the side of the photoelectric conversion unit from the light receiving surface which is the surface of the semiconductor substrate on which the incident light is irradiated. Separation part and An image signal generation unit that generates an image signal based on the photoelectric conversion, An image pickup apparatus including a processing circuit for processing the generated image signal.

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Abstract

Selon la présente invention, toute réduction de la sensibilité d'un pixel pourvu d'une partie de maintien de charge est empêchée.　L'invention concerne un élément d'imagerie comprenant des parties de conversion photoélectrique, des parties de séparation et une unité de génération de signal d'image. Chacune des parties de conversion photoélectrique est positionnée sur un substrat semi-conducteur et effectue une conversion photoélectrique de la lumière incidente provenant d'un sujet. Les parties de séparation sont adjacentes aux parties de conversion photoélectrique et sont conçues sous une forme de paroi inclinée obliquement par rapport à une surface de réception de lumière, qui est une surface du substrat semi-conducteur qui est irradiée avec la lumière incidente, vers les parties de conversion photoélectrique, les parties de séparation séparant les parties de conversion photoélectrique. L'unité de génération de signal d'image génère un signal d'image sur la base de la conversion photoélectrique.
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