WO2021149349A1 - Élément d'imagerie et dispositif d'imagerie - Google Patents
Élément d'imagerie et dispositif d'imagerie Download PDFInfo
- Publication number
- WO2021149349A1 WO2021149349A1 PCT/JP2020/044014 JP2020044014W WO2021149349A1 WO 2021149349 A1 WO2021149349 A1 WO 2021149349A1 JP 2020044014 W JP2020044014 W JP 2020044014W WO 2021149349 A1 WO2021149349 A1 WO 2021149349A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photoelectric conversion
- unit
- pixel
- light
- conversion unit
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 150
- 239000004065 semiconductor Substances 0.000 claims abstract description 137
- 238000000926 separation method Methods 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 31
- 238000012545 processing Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000011229 interlayer Substances 0.000 claims description 11
- 210000001747 pupil Anatomy 0.000 claims description 8
- 230000000717 retained effect Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 82
- 239000012071 phase Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 238000005096 rolling process Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
Abstract
Selon la présente invention, toute réduction de la sensibilité d'un pixel pourvu d'une partie de maintien de charge est empêchée. L'invention concerne un élément d'imagerie comprenant des parties de conversion photoélectrique, des parties de séparation et une unité de génération de signal d'image. Chacune des parties de conversion photoélectrique est positionnée sur un substrat semi-conducteur et effectue une conversion photoélectrique de la lumière incidente provenant d'un sujet. Les parties de séparation sont adjacentes aux parties de conversion photoélectrique et sont conçues sous une forme de paroi inclinée obliquement par rapport à une surface de réception de lumière, qui est une surface du substrat semi-conducteur qui est irradiée avec la lumière incidente, vers les parties de conversion photoélectrique, les parties de séparation séparant les parties de conversion photoélectrique. L'unité de génération de signal d'image génère un signal d'image sur la base de la conversion photoélectrique.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020006516A JP2021114538A (ja) | 2020-01-20 | 2020-01-20 | 撮像素子および撮像装置 |
| JP2020-006516 | 2020-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2021149349A1 true WO2021149349A1 (fr) | 2021-07-29 |
Family
ID=76993345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2020/044014 WO2021149349A1 (fr) | 2020-01-20 | 2020-11-26 | Élément d'imagerie et dispositif d'imagerie |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2021114538A (fr) |
| WO (1) | WO2021149349A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210405409A1 (en) * | 2018-10-24 | 2021-12-30 | Samsung Electronics Co., Ltd. | Display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023095893A1 (fr) * | 2021-11-26 | 2023-06-01 | ソニーセミコンダクタソリューションズ株式会社 | Dispositif de photodétection et dispositif électronique |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013065688A (ja) * | 2011-09-16 | 2013-04-11 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
| JP2014096490A (ja) * | 2012-11-09 | 2014-05-22 | Sony Corp | 撮像素子、製造方法 |
| WO2014156933A1 (fr) * | 2013-03-29 | 2014-10-02 | ソニー株式会社 | Élément d'imagerie et dispositif d'imagerie |
| US20160013231A1 (en) * | 2014-07-14 | 2016-01-14 | Samsung Electronics Co., Ltd. | Phase-difference detection pixel and image sensor having the same |
| JP2016187007A (ja) * | 2015-03-27 | 2016-10-27 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
| US20170040357A1 (en) * | 2015-08-06 | 2017-02-09 | United Microelectronics Corp. | Image sensor and method for fabricating the same |
| US20170134683A1 (en) * | 2015-11-09 | 2017-05-11 | Stmicroelectronics (Crolles 2) Sas | Global-shutter image sensor |
| JP2017168566A (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | 固体撮像素子、および電子機器 |
| US20180114806A1 (en) * | 2016-10-20 | 2018-04-26 | SK Hynix Inc. | Image sensor having shields and methods of fabricating the same |
| WO2018100998A1 (fr) * | 2016-12-01 | 2018-06-07 | ソニーセミコンダクタソリューションズ株式会社 | Élément d'imagerie à semiconducteur, procédé de fabrication d'élément d'imagerie à semiconducteur, et dispositif d'imagerie |
| JP2018160486A (ja) * | 2017-03-22 | 2018-10-11 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、電子機器 |
| WO2019098035A1 (fr) * | 2017-11-15 | 2019-05-23 | ソニーセミコンダクタソリューションズ株式会社 | Élément de photodétection et son procédé de fabrication |
-
2020
- 2020-01-20 JP JP2020006516A patent/JP2021114538A/ja active Pending
- 2020-11-26 WO PCT/JP2020/044014 patent/WO2021149349A1/fr active Application Filing
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013065688A (ja) * | 2011-09-16 | 2013-04-11 | Sony Corp | 固体撮像素子および製造方法、並びに電子機器 |
| JP2014096490A (ja) * | 2012-11-09 | 2014-05-22 | Sony Corp | 撮像素子、製造方法 |
| WO2014156933A1 (fr) * | 2013-03-29 | 2014-10-02 | ソニー株式会社 | Élément d'imagerie et dispositif d'imagerie |
| US20160013231A1 (en) * | 2014-07-14 | 2016-01-14 | Samsung Electronics Co., Ltd. | Phase-difference detection pixel and image sensor having the same |
| JP2016187007A (ja) * | 2015-03-27 | 2016-10-27 | 株式会社東芝 | 固体撮像装置および固体撮像装置の製造方法 |
| US20170040357A1 (en) * | 2015-08-06 | 2017-02-09 | United Microelectronics Corp. | Image sensor and method for fabricating the same |
| US20170134683A1 (en) * | 2015-11-09 | 2017-05-11 | Stmicroelectronics (Crolles 2) Sas | Global-shutter image sensor |
| JP2017168566A (ja) * | 2016-03-15 | 2017-09-21 | ソニー株式会社 | 固体撮像素子、および電子機器 |
| US20180114806A1 (en) * | 2016-10-20 | 2018-04-26 | SK Hynix Inc. | Image sensor having shields and methods of fabricating the same |
| WO2018100998A1 (fr) * | 2016-12-01 | 2018-06-07 | ソニーセミコンダクタソリューションズ株式会社 | Élément d'imagerie à semiconducteur, procédé de fabrication d'élément d'imagerie à semiconducteur, et dispositif d'imagerie |
| JP2018160486A (ja) * | 2017-03-22 | 2018-10-11 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、電子機器 |
| WO2019098035A1 (fr) * | 2017-11-15 | 2019-05-23 | ソニーセミコンダクタソリューションズ株式会社 | Élément de photodétection et son procédé de fabrication |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210405409A1 (en) * | 2018-10-24 | 2021-12-30 | Samsung Electronics Co., Ltd. | Display device |
| US11656517B2 (en) * | 2018-10-24 | 2023-05-23 | Samsung Electronics Co., Ltd. | Display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2021114538A (ja) | 2021-08-05 |
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