WO2021145661A3 - Composé précurseur pour dépôt de couche atomique (ald) ou dépôt chimique en phase vapeur (cvd), et procédé d'ald/cvd l'utilisant - Google Patents

Composé précurseur pour dépôt de couche atomique (ald) ou dépôt chimique en phase vapeur (cvd), et procédé d'ald/cvd l'utilisant Download PDF

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Publication number
WO2021145661A3
WO2021145661A3 PCT/KR2021/000443 KR2021000443W WO2021145661A3 WO 2021145661 A3 WO2021145661 A3 WO 2021145661A3 KR 2021000443 W KR2021000443 W KR 2021000443W WO 2021145661 A3 WO2021145661 A3 WO 2021145661A3
Authority
WO
WIPO (PCT)
Prior art keywords
ald
cvd
precursor compound
chemical vapor
atomic layer
Prior art date
Application number
PCT/KR2021/000443
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English (en)
Korean (ko)
Other versions
WO2021145661A2 (fr
Inventor
염규현
문기영
이현경
석장현
박정우
Original Assignee
주식회사 한솔케미칼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 한솔케미칼 filed Critical 주식회사 한솔케미칼
Publication of WO2021145661A2 publication Critical patent/WO2021145661A2/fr
Publication of WO2021145661A3 publication Critical patent/WO2021145661A3/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un composé précurseur et, plus particulièrement : un composé précurseur comprenant un métal du groupe 13 du tableau périodique et disponible pour un dépôt de film mince par dépôt de couche atomique (ALD) ou dépôt chimique en phase vapeur (CVD) ; et un procédé de fabrication d'un film mince à l'aide de celui-ci.　
PCT/KR2021/000443 2020-01-17 2021-01-13 Composé précurseur pour dépôt de couche atomique (ald) ou dépôt chimique en phase vapeur (cvd), et procédé d'ald/cvd l'utilisant WO2021145661A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020200006636A KR20210093011A (ko) 2020-01-17 2020-01-17 원자층 증착용(ald), 화학 기상 증착용(cvd) 전구체 화합물 및 이를 이용한 ald/cvd 증착법
KR10-2020-0006636 2020-01-17

Publications (2)

Publication Number Publication Date
WO2021145661A2 WO2021145661A2 (fr) 2021-07-22
WO2021145661A3 true WO2021145661A3 (fr) 2021-09-10

Family

ID=76864784

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2021/000443 WO2021145661A2 (fr) 2020-01-17 2021-01-13 Composé précurseur pour dépôt de couche atomique (ald) ou dépôt chimique en phase vapeur (cvd), et procédé d'ald/cvd l'utilisant

Country Status (3)

Country Link
KR (1) KR20210093011A (fr)
TW (1) TWI771864B (fr)
WO (1) WO2021145661A2 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070107124A (ko) * 2005-02-14 2007-11-06 프랙스에어 테크놀로지, 인코포레이티드 유기알루미늄 전구체 화합물
KR20150101986A (ko) * 2012-12-25 2015-09-04 가부시키가이샤 아데카 알루미늄 화합물, 박막 형성용 원료 및 박막 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100246155B1 (ko) * 1997-07-28 2000-04-01 최형수 알루미늄 화학 증착법을 위한 새로운 아마이도 알란 전구체
US7348445B2 (en) * 2005-02-14 2008-03-25 Praxair Technology, Inc. Organoaluminum precursor compounds
KR101787204B1 (ko) 2015-11-23 2017-10-18 주식회사 한솔케미칼 원자층 증착용(ald) 유기금속 전구체 화합물 및 이를 이용한 ald 증착법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070107124A (ko) * 2005-02-14 2007-11-06 프랙스에어 테크놀로지, 인코포레이티드 유기알루미늄 전구체 화합물
KR20150101986A (ko) * 2012-12-25 2015-09-04 가부시키가이샤 아데카 알루미늄 화합물, 박막 형성용 원료 및 박막 제조방법

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KYLE J. BLAKENEY, CHARLES H. WINTER: "Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing Agent", CHEMISTRY OF MATERIALS, AMERICAN CHEMICAL SOCIETY, US, vol. 30, no. 6, 27 March 2018 (2018-03-27), US, pages 1844 - 1848, XP055514273, ISSN: 0897-4756, DOI: 10.1021/acs.chemmater.8b00445 *
KYLE J. BLAKENEY, MARTIN PHILIP D., WINTER CHARLES H.: "Aluminum dihydride complexes and their unexpected application in atomic layer deposition of titanium carbonitride films", DALTON TRANSACTIONS, VOL.47, N.32, 1 January 2018 (2018-01-01), pages 10897 - 10905, XP055682367, Retrieved from the Internet <URL:http://xlink.rsc.org/?DOI=C8DT02508H> [retrieved on 20200402], DOI: 10.1039/C8DT02508H *
WERNER UHL, JURGEN WAGNER, DIETER FENSKE, GERHAD BAUM: "(N,N,N',N"-TETRAMETHYLETHYLENEDIAMINE)DI(TERT-BUTYL)ALUMINUM CATIONS - MOLECULAR STRUCTURE OF �(ME3C)AL(TMEDA)� + �(ME3C)2ALBR2�", ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, vol. 612, no. 6, 1 June 1992 (1992-06-01), pages 25 - 34, XP008078382, ISSN: 0044-2313, DOI: 10.1002/zaac.19926120106 *

Also Published As

Publication number Publication date
TW202128720A (zh) 2021-08-01
WO2021145661A2 (fr) 2021-07-22
KR20210093011A (ko) 2021-07-27
TWI771864B (zh) 2022-07-21

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