WO2021143643A1 - 显示基板及其制作方法、和显示装置 - Google Patents

显示基板及其制作方法、和显示装置 Download PDF

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Publication number
WO2021143643A1
WO2021143643A1 PCT/CN2021/071058 CN2021071058W WO2021143643A1 WO 2021143643 A1 WO2021143643 A1 WO 2021143643A1 CN 2021071058 W CN2021071058 W CN 2021071058W WO 2021143643 A1 WO2021143643 A1 WO 2021143643A1
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Prior art keywords
layer
display
area
film layer
via hole
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PCT/CN2021/071058
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English (en)
French (fr)
Inventor
贾立
高涛
吕祖彬
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to US17/424,475 priority Critical patent/US20230157086A1/en
Publication of WO2021143643A1 publication Critical patent/WO2021143643A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display substrate, a manufacturing method thereof, and a display device.
  • a display device such as a mobile phone, a tablet computer, etc.
  • a camera device or imaging device
  • the camera device is usually arranged on a side outside the display area of the display screen.
  • the installation of the camera device requires a certain position, it is not conducive to the full screen and narrow frame design of the display screen.
  • a hole is opened in the display area to reserve an installation position for the camera device, so as to realize the design of a narrow frame to maximize the display area of the display screen.
  • a substance that cannot be removed remains in the hole, which hinders the installation of the imaging device.
  • the embodiments of the present disclosure provide a display substrate, a manufacturing method thereof, and a display device.
  • embodiments of the present disclosure provide a method for manufacturing a display substrate, the display substrate including a base film layer and a functional film layer;
  • the display substrate includes a display area and an opening area
  • the method includes:
  • a second via hole in the opening area is formed, and the second via hole penetrates the substrate film layer and all other than the at least one functional film layer The functional film layer;
  • the step of forming a transition layer covering the display area and exposing the first via hole includes:
  • the transition material layer located in the opening area to form a transition layer covering the display area and exposing the first via;
  • the transition layer includes a metal layer or a metal oxide layer.
  • the step of forming multiple functional film layers on the substrate film layer includes:
  • the step of forming a transition layer covering the display area and exposing the first via includes:
  • the step of removing the transition layer includes:
  • the transition layer is etched away with the first etching solution and the anode is retained.
  • the material of the transition layer includes indium gallium zinc oxide
  • the material of the anode includes indium tin oxide
  • the first etching solution is a sulfuric acid solution.
  • the step of forming a multilayer functional film layer on the substrate film layer includes:
  • the step of etching at least one of the functional film layers in the opening area to form a first via hole penetrating the at least one functional film layer includes:
  • the display substrate further includes a transition area between the display area and the opening area;
  • the method further includes:
  • a metal pattern located on the substrate film layer is formed, the metal pattern includes a first metal layer and a second metal layer sequentially stacked in a direction perpendicular to the substrate film layer, and the second metal layer is located Between the first metal layer and the substrate film layer, the first metal layer and the second metal layer are made of different metal materials;
  • the step of using the second photoresist pattern as a mask to etch the flat material layer to form a flat layer includes:
  • the flat material layer located in the transition area is etched to form an annular via hole penetrating the flat layer to expose the metal pattern in the transition area ,
  • the annular via hole is arranged to surround the third via hole and communicate with the third via hole;
  • the second etching solution is used to wet-etch the metal pattern located in the transition area to form isolation pillars.
  • the etching speed of the second metal layer in the second etching solution is greater than that of the first etching solution.
  • the method further includes:
  • the method further includes:
  • the third photoresist pattern as a mask, at least one functional film layer located in the opening area is etched to form a fourth via hole penetrating the at least one functional film layer, and The fourth via hole and the third via hole penetrate each other and both belong to the first via hole;
  • the at least one functional film layer includes at least one of a buffer layer, a light shielding layer, an active layer, a gate insulating layer, a gate pattern, an interlayer insulating layer, a metal layer, and a passivation layer.
  • the substrate film layer includes a barrier layer
  • the third photoresist pattern is used as a mask to etch at least one functional film layer located in the opening area to form a fourth via hole penetrating the at least one functional film layer
  • the steps include:
  • the method further includes:
  • At least one functional film layer is formed in the display area and the opening area, wherein the step of forming the target functional film layer includes:
  • the material layer is etched using the fourth photoresist pattern as a mask to form a target display film layer, the target display film layer exposes the open area, and the target display film layer is the at least Any one of the functional film layers.
  • the method further includes:
  • the display substrate is peeled off from the carrier substrate.
  • the display substrate further includes a peripheral area, the opening area and the display area are surrounded by the peripheral area, and the peripheral area is provided with a walkthrough connected to the display device in the display area. Wire.
  • the orthographic projection of the first via hole on the plane where the substrate film layer is located overlaps the orthographic projection of the second via hole on the plane where the substrate film layer is located.
  • embodiments of the present disclosure also provide a display substrate, the display substrate including a display area and an opening area; the display substrate includes a base film layer and a display film layer, the display film layer includes a multi-layer function A film layer, wherein the display substrate is provided with a first via hole and a second via hole, the first via hole penetrates at least one layer of the functional film layer, and the second via hole penetrates the substrate film layer And all other functional film layers except for the at least one functional film layer, the orthographic projection of the first via on the plane where the substrate film layer is located and the second via on the substrate The orthographic projections on the plane of the film overlap.
  • first opening size of the second via hole is larger than the second opening size of the second via hole, and the first opening size of the second via hole is such that the second via hole is close to the display film.
  • the opening size of one end of the layer, the second opening size of the second via hole is the opening size of the end of the second via hole away from the display film layer.
  • the display film layer includes a flat layer
  • the first via hole includes a third via hole penetrating the flat layer.
  • the display film layer further includes other functional film layers located between the flat layer and the base film layer
  • the first via hole further includes a fourth via hole
  • the fourth via hole penetrates At least one functional film layer among the other functional film layers.
  • the substrate film layer includes a barrier layer; the fourth via hole penetrates at least one functional film layer and a part of the barrier layer.
  • the depth of the fourth via in the direction perpendicular to the substrate film layer is greater than the separation distance between the barrier layer and the flat layer.
  • the display substrate further includes a transition area between the display area and the opening area
  • the flat layer further includes an annular via hole penetrating the flat layer in the transition area
  • the A ring-shaped via hole is arranged to surround the third via hole and communicate with the third via hole
  • the ring-shaped via hole is provided with an isolation column, and the isolation column includes successively in a direction perpendicular to the substrate film layer.
  • the first metal layer and the second metal layer are stacked, the second metal layer is located between the first metal layer and the base film layer, and the second metal layer is located directly on the base film layer.
  • the projection is located inside the orthographic projection of the first metal layer on the substrate film layer.
  • transition area is an annular area or a box-shaped area.
  • the display film layer includes at least one of a buffer layer, a light shielding layer, an active layer, a gate insulating layer, a gate pattern, an interlayer insulating layer, a metal layer, and a passivation layer.
  • isolation pillar and the metal layer are located on the same layer and have the same material.
  • the display film layer is composed of the multi-layer functional film layer, and the orthographic projection of the first via hole on the plane where the substrate film layer is located is located in the second via hole on the substrate film layer. The interior of the orthographic projection on the plane of the layer.
  • the display substrate further includes a peripheral area, the opening area and the display area are surrounded by the peripheral area, and the peripheral area is provided with a walkthrough connected to the display device in the display area. Wire.
  • embodiments of the present disclosure also provide a display device, including the display substrate as described above.
  • FIG. 1a is one of the schematic diagrams of the positions of the regions in the display substrate provided by an embodiment of the disclosure
  • FIG. 1b is the second schematic diagram of the position of each area in the display substrate provided by an embodiment of the present disclosure
  • FIG. 2 is a flowchart of a manufacturing method of a display substrate provided by an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of a structure before forming a transition layer in a manufacturing method of a display substrate according to another embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of a structure after forming a transition layer in a manufacturing method of a display substrate provided by another embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of a structure after forming a second via hole in a manufacturing method of a display substrate according to another embodiment of the present disclosure
  • FIG. 6 is a schematic structural diagram of forming a transition material layer and photoresist in a manufacturing method of a display substrate provided by another embodiment of the present disclosure
  • FIG. 7 is a schematic structural diagram of forming a transition material layer and a first photoresist pattern in a manufacturing method of a display substrate provided by another embodiment of the present disclosure
  • FIG. 8 is a schematic structural diagram of a transition layer without removing the first photoresist pattern in a manufacturing method of a display substrate provided by another embodiment of the present disclosure
  • FIG. 9 is a schematic structural diagram of forming a transition layer and removing the first photoresist pattern in a manufacturing method of a display substrate provided by another embodiment of the present disclosure.
  • 10a-10c are schematic diagrams of a process of forming an isolation pillar in a manufacturing method of a display substrate provided by another embodiment of the present disclosure.
  • 11a-11c are schematic diagrams of the process of forming another isolation column in a manufacturing method of a display substrate provided by another embodiment of the present disclosure.
  • FIG. 12 is a schematic structural diagram of a display substrate provided by an embodiment of the disclosure.
  • the embodiment of the present disclosure provides a method for manufacturing a display substrate.
  • the display substrate includes a substrate film layer and a functional film layer; as shown in FIG. 1a and FIG. 1b, the display substrate includes a display area, an opening area, and a peripheral area. The opening area and the display area are surrounded by the peripheral area; as shown in FIG. 2, the method includes:
  • Step 201 forming a multilayer functional film layer on the substrate film layer
  • Step 202 etch at least one of the functional film layers in the opening area to form a first via
  • Step 203 forming a transition layer covering the display area and exposing the first via hole in the opening area;
  • Step 204 Using the transition layer as a mask, a second via hole in the opening area is formed, and the first via hole and the second via hole penetrate all the functional film layers and the substrate film layer ;
  • Step 205 Remove the transition layer covering the display area.
  • At least one functional film layer is etched in the opening area to form the first via; after that, the transition layer is used as The mask forms a second via hole in the opening area, and the first via hole and the second via hole communicate to penetrate all the functional film layers and the substrate film layer. In this way, it can avoid the situation that the material of the multilayer functional film layer formed on the substrate film layer enters the hole of the substrate film layer due to the opening of the substrate film layer in advance, and can reduce the substrate film when the display substrate is completed.
  • the thickness of the material deposition in the layer hole ensures that the thickness of the material deposition in the substrate film hole is within the range of the deep hole removal capability, which facilitates the subsequent thorough removal of the material in the substrate film hole and facilitates the installation of the camera device. Therefore, the technical solution provided by the present disclosure can ensure that the material in the second via hole is completely removed, which facilitates the installation of the camera device.
  • the perforated area I, the display area II, and the peripheral area III can be as shown in Fig. 1a and Fig. 1b.
  • the perforated area I is used for arranging the sensor devices required by the display device, and the display area II is arranged
  • the display device is used for light-emitting display, and the peripheral area III is arranged with signal wires connected to the display device in the display area II.
  • the display area II can be set to completely surround the opening area I, as shown in Figure 1a, or the display area II can be set to half surround the opening area I, that is, the display area II and the peripheral area III are jointly surrounded by the opening area I, as shown in the figure. Shown in 1b.
  • the opening area I can be the area for installing the imaging device. By etching the functional film in this area, an opening for inserting the imaging device into the display substrate is formed; the opening area I can also be other openings to the functional film.
  • the area of the hole for example, in an organic light-emitting diode (OLED) flexible display device, in order to improve the stretchability of the OLED display device, the functional film layer is etched in multiple areas of the OLED flexible display device Form openings.
  • OLED organic light-emitting diode
  • the above-mentioned display substrate may further include a transition region IV.
  • the transition area IV can be located between the opening area I and the display area II.
  • isolation structures such as isolation columns or isolation grooves can be arranged to prevent the water and oxygen entering from the opening area I from corroding the display film in the display area II. , To ensure the normal operation of the display film.
  • the transition area IV is an annular area
  • the transition area IV is a box-shaped area
  • the display area II as shown in FIG. 1a is set to completely surround the aperture area I
  • the transition area IV is located between the aperture area I and the display area II; in the display area II and the peripheral area III as shown in FIG. 1b
  • the opening area I is surrounded together
  • a part of the transition area IV is located between the opening area I and the display area II
  • the other part of the transition area IV is located between the opening area I and the peripheral area III.
  • the box-shaped area may be a rounded box-shaped area and a right-angled box-shaped area, which is not limited here.
  • a base film layer 420 has been formed on the carrier substrate 410 in the display substrate, and a multilayer functional film layer 430 is formed on the base film layer.
  • the multilayer functional film layer 430 may include thin film transistors. At least one of the display film layers such as the array layer 440, the flat layer 491, the pixel insulating layer 492, the anode 480, and the support pattern 450.
  • a part of the functional film layer of the multi-layer functional film layer 430 may be patterned with the part located in the opening area I removed, and another part of the functional film layer During the patterning, the part located in the opening area I is not removed, and then the first via 401 is formed by etching to etch at least one layer of the part of the functional film layer in the part located in the opening area I that is not removed during the patterning.
  • Functional film layer it can also be that all the functional film layers of the multi-layer functional film layer 430 are not removed during the patterning of the part located in the opening area I, then the etching to form the first via 401 is etched in the multi-layer functional film At least one functional film layer in the layer 430.
  • the number of etchings for forming the first via 401 is not limited.
  • the first via 401 may be formed by one etching, or the first via 401 may be formed by etching multiple times.
  • One etching in the etching process may be to etch one layer of functional film layers, or it may be to etch multiple layers of functional film layers.
  • the embodiment of the present disclosure does not limit the specific manner in which the first via 401 is formed.
  • a transition layer 460 covering the display area II and exposing the opening area I is formed.
  • the transition layer 460 may also cover the peripheral area III to protect the peripheral area III.
  • the formed structure (for example: alignment mark) is not affected, and the transition layer 460 can also cover the transition area IV. That is, the orthographic projection of the transition layer 460 on the carrier substrate 410 coincides with the non-opening area (the area on the display substrate excluding the opening area I).
  • the transition layer 460 can be formed by covering the opening area I when the transition layer material is deposited in the entire layer (including the opening area I, the display area II, the peripheral area III and the transition area IV), and then uncovering the structure covering the opening area I to The transition layer material deposited in the opening area I and the transition layer material deposited in the display area II are torn, thereby obtaining the transition layer 460 exposing the opening area I; the transition layer 460 can also be formed in other ways, which method is used in detail The formation of the transition layer 460 is not limited here.
  • a second via 402 that penetrates all the remaining film layers in the opening region I is formed.
  • All the above-mentioned remaining film layers may be the substrate film layer remaining after the first via hole 401 penetrates all the functional film layers that have been formed, or it may be the functional film remaining after the first via hole 401 penetrates only part of the functional film layer.
  • the etching method for forming the second via 402 may be dry etching.
  • the transition layer 460 is removed, as shown in FIG. 5, so as to continue the preparation of the subsequent film layer of the display substrate. Removing the transition layer 460 will not increase the thickness of the display substrate, nor will it change the layer structure of the display substrate.
  • the step of forming a transition layer covering the display area and exposing the first via hole in the opening area includes:
  • the transition material layer located in the opening area to form a transition layer covering the display area and exposing the first via;
  • the transition layer material is deposited in the entire layer to obtain a transition material layer 461 covering the opening area I and the display area II, as shown in FIG. 6.
  • a photoresist 471 is coated on the transition material layer 461; after the photoresist 471 is covered by a mask corresponding to the light-transmitting area and the opening area I, the light is exposed to ultraviolet light. The part of the resist 471 located in the opening area I is exposed; after the exposure, the exposed part of the photoresist is removed by a developer to form a first photoresist pattern 470, as shown in FIG. 7.
  • the portion of the transition material layer 461 located in the opening area I is etched away to obtain the transition layer 460 exposing the first via 401 in the opening area I, as shown in FIG. 8 Shown.
  • an etching solution is used to dissolve the first photoresist pattern 470, as shown in FIG. 9.
  • the etching solution can be hydrogen peroxide, deionized water, or the like.
  • the transition layer 460 includes a metal layer or a metal oxide layer.
  • a metal layer can be used as the transition layer 460, or a metal oxide layer can be used as the transition layer 460, and a metal and metal oxide mixed layer can also be used as the transition layer 460.
  • the transition layer 460 may include an indium gallium zinc oxide (Indium Gallium Zinc Oxide, IGZO) layer.
  • IGZO Indium Gallium Zinc Oxide
  • the step of forming multiple functional film layers on the substrate film layer further includes:
  • the step of forming a transition layer covering the display area and exposing the first via includes:
  • the step of removing the transition layer includes:
  • the transition layer is etched away with the first etching solution and the anode is retained.
  • the substrate film 420 and the anode 480 are already formed on the carrier substrate 410, wherein the anode 480 is located in the display area II.
  • the transition layer 460 formed after the formation of the first via hole 401 covers the anode 480 in the display area II.
  • the transition layer 460 is etched by the first etching solution to remove the transition layer 460, and the anode 480 will not be etched during the removal of the transition layer 460 to ensure that it will not affect The structure of the display substrate.
  • the first etching solution may be a sulfuric acid solution, and only the IGZO layer is removed without removing the ITO.
  • the step of forming multiple functional film layers on the substrate film layer includes:
  • the step of etching at least one of the functional film layers in the opening area to form a first via hole includes:
  • the multilayer functional film layer 330 formed in the display area II includes a flat layer PLN 491 and a pixel insulating layer PDL 492, as shown in FIG. 4.
  • the process of forming a multi-layer functional film includes: depositing a flat layer material across the entire layer to obtain a flat material layer covering the opening area I and the display area II, and forming a patterned pixel insulating layer on the flat material layer in the display area II 492.
  • the first via hole 401 is formed, that is, after the pixel insulating layer 492 is formed, photoresist is applied to the aperture area I and the display area II to cover the pixel insulating layer 492 and the flat material layer;
  • the mask plate corresponding to the hole area I covers the photoresist
  • the part of the photoresist located in the hole area I is exposed by ultraviolet light; after the exposure, the exposed part of the photoresist is removed by a developer to form A second photoresist pattern; and using the second photoresist pattern as a mask
  • the part of the flat material layer located in the opening area I is etched to obtain a flat layer 491, as shown in FIG. 4, the third The via 403 penetrates through the flat layer 491, and the third via 403 is a part of the first via 401, that is, the third via 403 is the first via 401 obtained by multiple etchings mentioned above.
  • the etched via is
  • an etching solution is used to dissolve the second photoresist pattern, where the etching solution can be hydrogen peroxide, deionized water, or the like.
  • the display substrate further includes a transition area between the display area and the opening area;
  • the method further includes:
  • a metal pattern located on the substrate film layer is formed, the metal pattern includes a first metal layer and a second metal layer that are sequentially stacked in a direction perpendicular to the substrate film layer, and the second metal A layer is located between the first metal layer and the substrate film layer, and the first metal layer and the second metal layer are made of different metal materials;
  • the step of using the second photoresist pattern as a mask to etch the flat material layer to form a flat layer includes:
  • the flat material layer located in the transition area is etched to form an annular via hole penetrating the flat layer to expose the metal pattern in the transition area ,
  • the annular via hole is arranged to surround the third via hole and communicate with the third via hole;
  • the second etching solution is used to wet-etch the metal pattern located in the transition area to form isolation pillars.
  • the etching speed of the second metal layer in the second etching solution is greater than that of the first etching solution.
  • an isolation column 493 is formed in the transition area IV between the display area II and the aperture area I to prevent water and oxygen from entering the aperture area I from corroding the display area II
  • the inner display film layer ensures the normal operation of the display film layer in the display area II.
  • a metal pattern is formed in the display area II and the transition area IV, wherein the metal pattern located in the display area II can be used as the source metal or the drain metal in the thin film transistor array layer.
  • the metal pattern located in the transition area IV is arranged around the opening area I. As shown in Figure 1a, when the outer contour of the opening area I is circular, the metal pattern located in the transition area IV is a metal ring.
  • the metal pattern 4930 is sequentially stacked with a first metal layer 4931 and a second metal layer 4932 in a direction perpendicular to the substrate film layer.
  • the second metal layer 4932 and the first metal layer 4931 Metals of different materials, so that the second metal layer 4932 and the first metal layer 4931 can have different etching speeds under the same etching conditions.
  • a material with a high etching speed is selected as the material of the second metal layer, and a material with a low etching speed is selected as the material of the first metal layer 4931.
  • the second etching solution is used to wet etch the metal pattern located in the transition region IV. Since the etching speed of the second metal layer 4932 is greater than the etching speed of the first metal layer 4931, the etching speed of the first metal layer 4931 is gradually reduced.
  • a step 4934 is formed between the layer 4931 and the second metal layer 4932 to obtain an isolation pillar 493. As shown in FIG. 10b, the orthographic projection of the second metal layer 4932 in the isolation pillar 493 on the substrate film layer is located on the first metal layer. 4931 is inside the orthographic projection on the substrate film layer.
  • the subsequently formed display film layer covering the display area II and the transition area IV is disconnected at the isolation column 493 with the step 4934, that is, as shown in FIG. 10c, the portion 1010 of the film layer in the isolation column 493 near the opening area I will be The portion 1020 of the display film layer in the metal structure 493 close to the display area II is disconnected.
  • the water and oxygen will not damage the functionality of the display film in the part 1020 of the metal structure close to the display area II, ensuring the display in the display area II.
  • the film is working normally.
  • the metal pattern 4930 can also have a three-layer structure, that is, a first metal layer 4931, a second metal layer 4932, and a third metal layer 4933 are sequentially stacked in a direction perpendicular to the substrate film layer, as shown in FIG. 11a. ;
  • the first metal layer 4931 and the third metal layer 4933 are the same metal material
  • the first metal layer 4931 and the second metal layer 4932 are different metal materials
  • the etching speed is greater than the etching speed of the first metal layer 4931 and the third metal layer 4933, so that notches 4935 are gradually formed in the metal pattern to obtain isolation pillars 493, as shown in FIG. 11b.
  • the subsequently formed display film layer covering the display area II and the transition area IV is disconnected at the isolation column 493 with the notch 4935, that is, as shown in FIG. 11c, the film layer is located in the isolation column 493 near the portion 1010 of the opening area I.
  • the portion 1020 of the metal structure 493 close to the display area II is disconnected from the display film layer.
  • the method further includes:
  • the method further includes:
  • the third photoresist pattern as a mask, at least one functional film layer located in the opening area is etched to form a fourth via hole penetrating the at least one functional film layer, and The fourth via hole and the third via hole penetrate each other and both belong to the first via hole;
  • these functional film layers may include: a buffer layer 441, a light shielding layer, an active layer 442, a gate insulating layer 443, a gate pattern 444, an interlayer insulating layer 445, a metal layer, and a passivation layer 446. At least one layer.
  • the fourth via 404 may penetrate only one functional film layer, or may penetrate multiple functional film layers, which is not limited here.
  • the formed fourth via hole 404 and the third via hole 403 penetrate each other and belong to the first via hole 401, so that the thickness of the functional film layer and the substrate film layer remaining in the opening area I is the first formed subsequently The thickness of the second via 402.
  • the sum of the depth of the fourth via 404 in the direction perpendicular to the substrate film layer 420 and the depth of the subsequent second via 402 in the direction perpendicular to the substrate film 420 is equal to
  • the separation distance d1 between the flat layer 491 and the carrier substrate 410 in the direction perpendicular to the base film layer 420 is as shown in FIG. 4.
  • the formation of the fourth via hole 404 can reduce the number of functional film layers in the opening region I that need to be etched when the second via hole 402 is subsequently formed, and reduce the difficulty of etching the second via hole 402.
  • the substrate film layer includes a barrier layer
  • the third photoresist pattern is used as a mask to etch at least one functional film layer located in the opening area to form a fourth via hole penetrating the at least one functional film layer
  • the steps include:
  • the third photoresist pattern as a mask, at least one functional film layer and part of the barrier layer located in the opening area are etched to form a fourth via hole.
  • the formation of the fourth via 404 not only penetrates all the functional film layers between the substrate film layer 420 and the flat layer 491 in the opening area I, but also etches Part of the barrier layer 421.
  • the depth of the fourth via 404 in the direction perpendicular to the substrate film layer 420 is equal to the depth between the flat layer 491 and the unetched barrier layer 421 perpendicular to the substrate.
  • the separation distance d2 in the direction of the film layer 420 that is, the depth of the fourth via 404 in the direction perpendicular to the substrate film layer 420 is greater than the separation distance between the barrier layer and the flat layer.
  • the barrier layer 421 is an inorganic layer
  • the remaining part of the barrier layer can prevent the water and oxygen passing through the organic layer in the other substrate film layer 422 from entering the functional film layer, and can protect the functional film layer from water before the second via 402 is formed.
  • the fourth via 404 ensures that the functional film layer is protected from the intrusion of water and oxygen before the second via 402 is formed, so as to reduce the film layer that needs to be etched to form the second via 402 as much as possible.
  • the method further includes:
  • At least one functional film layer is formed in the display area and the opening area, wherein the step of forming the target functional film layer includes:
  • the material layer is etched using the fourth photoresist pattern as a mask to form a target display film layer, the target display film layer exposes the open area, and the target display film layer is the at least Any one of the functional film layers.
  • At least one functional film layer is also formed on the base film layer 420.
  • Each of these functional film layers removes the part located in the opening area I during the patterning process.
  • the first via 401 that penetrates the multilayer functional film layer 430 is formed through the flat layer 491.
  • At least one functional film layer is formed on the substrate film layer 420, as shown in FIG. 3.
  • the target functional film layer is a buffer layer 441, a light shielding layer, an active layer 442, a gate insulating layer 443, a gate pattern 444, and a layer Any one of the inter-insulating layer 445, the metal layer, and the passivation layer 446.
  • the method further includes:
  • the display substrate is peeled from the carrier substrate to remove the material of the cathode and the light-emitting layer that enters the second via hole during the manufacturing process.
  • a channel that penetrates all the base film layer 420 and the multilayer functional film layer 430 formed on the carrier substrate 410 has been formed in the opening area I.
  • the formation process of the light-emitting layer may be: depositing light-emitting material on the entire layer to form a light-emitting layer, and at this time, the light-emitting layer material is deposited in the second via hole 402.
  • the formation process of the cathode can refer to the formation process of the light-emitting layer, which will not be repeated here.
  • the cathode material and the light-emitting layer material are deposited on the carrier substrate 410 in the second via 402.
  • the cathode material on the carrier substrate 410 will be torn off from the cathode.
  • the light-emitting layer material on the carrier substrate 410 will be torn off from the light-emitting layer, so that the second pass is removed.
  • the light-emitting layer material includes the light-emitting material formed in the display area and other materials formed in the entire layer, and the material of the light-emitting layer deposited in the second via 402 is other materials formed in the entire layer.
  • An embodiment of the present disclosure also provides a display substrate.
  • the display substrate includes a display area, an opening area, and a peripheral area, and the opening area and the display area are surrounded by the peripheral area;
  • the display substrate includes a base film layer 420 and a display film layer 430.
  • the display film layer 430 includes multiple functional film layers.
  • the display substrate is provided with a first via 401 and a second via 402.
  • a via 401 penetrates at least one functional film layer
  • the first via 401 and the second via 402 penetrate the display film 430 and the substrate film 420 of the display substrate, and the first via
  • the orthographic projection of 401 on the substrate film layer 420 is located inside the orthographic projection of the second via 402 on the substrate film layer 420.
  • the display substrate provided by the embodiment of the present disclosure is manufactured by the above-mentioned manufacturing method of the display substrate, wherein, after the first via 401 is formed, the transition layer 460 is used as a mask for the remaining functional film in the aperture area I
  • the layer is etched to form the first via 401 penetrating the remaining functional film layer by dry etching.
  • the opening size of the second via 402 can be made larger than the first via by adjusting the etching time.
  • the opening size of 401 is shown in Figure 4.
  • a gap 405 appears at the position where the second via 402 and the first via 401 are connected, that is, along the sidewall of the first via 401 to the middle of the sidewall of the second via 402 Opened a vacancy.
  • the function of the notch 405 is the same as that of the step 4934 in FIG. 10c and the notch 4935 in FIG. 11c, and both are used to separate two parts of the film layer formed at the same time.
  • the part of the subsequently formed light-emitting layer 431 and cathode 432 corresponding to the substrate film layer 420 is disconnected from the part corresponding to the display film layer 430 (this part is connected to the part located in the display area II), thereby preventing water and oxygen from entering the display area
  • the light-emitting layer 431 and the cathode 432 of II ensure that the light-emitting layer 431 and the cathode 432 in the display area II work normally.
  • the first opening size of the second via hole is larger than the second opening size of the second via hole, and the first opening size of the second via hole is the same as that of the second via hole.
  • the opening size of the end of the hole close to the display film layer, and the second opening size of the second via hole is the opening size of the end of the second via hole away from the display film layer.
  • the second via hole 402 is dry-etched. Since the end far away from the substrate film 420 receives greater energy, the first opening size of the second via hole 402 is larger; The energy received by one end of the 420 is relatively small, so that the second opening of the second via 402 has a relatively small size.
  • the display film layer 430 includes a flat layer 491, and the first via 401 includes a third via 403 penetrating the flat layer 491.
  • the first via 401 is formed by multiple etchings.
  • the process of forming the first via 401 includes: after the flat material layer and the pixel insulating layer 492 are formed, photoresist is applied to the opening area I and the display area II to cover the pixel insulating layer 492 and the flat pixel insulating layer 492. Material layer; After covering the photoresist with a mask corresponding to the light-transmitting area and the opening area I, the part of the photoresist located in the opening area I is exposed by ultraviolet light; after the exposure, it is removed with a developer The exposed part of the photoresist forms a second photoresist pattern; and using the second photoresist pattern as a mask, the part of the flat material layer located in the opening area I is etched to obtain a flat layer 491. Three vias 403 penetrate the flat layer 491, the third via 403 is located in the opening area, and the third via 403 is a part of the first via 401.
  • the display film layer 430 further includes other functional film layers located between the flat layer 491 and the base film layer 420, the first via 401 further includes a fourth via 404, and the The fourth via 404 penetrates at least one functional film layer among the other functional film layers.
  • At least one other functional film layer is also formed on the substrate film layer 420, and at least one functional film layer in these functional film layers is not removed during the patterning process.
  • Other functional film layers may include: at least one of a buffer layer 441, a light shielding layer, an active layer 442, a gate insulating layer 443, a gate pattern 444, an interlayer insulating layer 445, and a passivation layer 446 Floor.
  • the fourth via 404 may penetrate only one functional film layer, or may penetrate multiple functional film layers, which is not limited here.
  • the fourth via 404 is located in the opening area.
  • the formed fourth via hole 404 and the third via hole 403 penetrate each other and belong to the first via hole 401, so that the thickness of the functional film layer and the substrate film layer remaining in the opening area I is the first formed subsequently The thickness of the second via 402.
  • the sum of the depth of the fourth via 404 in the direction perpendicular to the substrate film layer 420 and the depth of the subsequent second via 402 in the direction perpendicular to the substrate film 420 is equal to
  • the separation distance d1 between the flat layer 491 and the carrier substrate 410 in the direction perpendicular to the base film layer 420 is as shown in FIG. 4.
  • the formation of the fourth via 404 can reduce the number of functional film layers in the opening area I that need to be etched when the second via 402 is subsequently formed, and reduce the etching difficulty of forming the second via 402.
  • the substrate film layer includes a barrier layer; the fourth via hole penetrates the other functional film layer and part of the barrier layer.
  • the formation of the fourth via 404 not only penetrates all other functional film layers between the substrate film layer 420 and the flat layer 491 in the opening area I, but also etches a part of the barrier layer 421.
  • the barrier layer 421 is an inorganic layer
  • the remaining part of the barrier layer can prevent the water and oxygen passing through the organic layer in the other substrate film layer 422 from entering the functional film layer, and can protect the functional film layer from water before the second via 402 is formed.
  • the fourth via 404 ensures that the functional film layer is protected from the intrusion of water and oxygen before the second via 402 is formed, so as to reduce the film layer that needs to be etched to form the second via 402 as much as possible.
  • the depth of the fourth via 404 in the direction perpendicular to the substrate film layer 420 is greater than the separation distance d3 between the barrier layer 421 and the flat layer 491.
  • the depth of the fourth via 404 in the direction perpendicular to the substrate film layer 420 is equal to the depth between the flat layer 491 and the unetched barrier layer 421 perpendicular to the substrate.
  • the separation distance d2 in the direction of the film layer 420 is as shown in FIG. 3, that is, the depth of the fourth via 404 in the direction perpendicular to the substrate film layer 420 is greater than the separation distance d3 between the barrier layer 421 and the flat layer 491.
  • the display substrate further includes a transition area IV located between the display area II and the opening area I
  • the flat layer 491 further includes a transition area 491 penetrating the flat layer 491 in the transition area IV.
  • An annular via 405, the annular via 405 is arranged to surround the third via 403 and communicate with the third via; the annular via 405 is provided with an isolation column 493, the isolation column 493 is shown in the figure As shown in 10c, it includes a first metal layer 4931 and a second metal layer 4932 that are sequentially arranged in a direction perpendicular to the substrate film layer.
  • the second metal layer 4932 is located between the first metal layer 4931 and the Between the base film layers 430, the orthographic projection of the second metal layer 4932 on the base film layer 430 is located inside the orthographic projection of the first metal layer 4931 on the base film layer 430.
  • a step 4934 is formed between the first metal layer 4931 and the second metal layer 4932, so that the subsequent display film layer covering the display area II and the transition area IV is formed on the isolation pillar 493 with the step 4934. That is, as shown in FIG. 10c, the part 1010 of the film layer in the isolation column 493 near the opening area I will be disconnected from the part 1020 of the display film layer in the metal structure 493 near the display area II. In this way, when water and oxygen invade the display film in the part 1010 of the metal structure close to the opening area I, the water and oxygen will not damage the functionality of the display film in the part 1020 of the metal structure close to the display area II, ensuring the display in the display area II. The film is working normally.
  • the spacer 493 can also have a three-layer structure, that is, a first metal layer 4931, a second metal layer 4932, and a third metal layer 4933 are stacked in sequence in the direction perpendicular to the substrate film layer, and the first metal layer 4933 A notch 4935 is formed in the layer 4931, the second metal layer 4932, and the third metal layer 4933 to obtain an isolation pillar 493, as shown in FIG. 11b.
  • the subsequently formed display film layer covering the display area II and the transition area IV is disconnected at the isolation column 493 with the notch 4935, that is, as shown in FIG. 11c, the film layer is located in the isolation column 493 near the portion 1010 of the opening area I.
  • the portion 1020 of the metal structure 493 close to the display area II is disconnected from the display film layer. In this way, when water and oxygen invade the display film in the part 1010 of the metal structure close to the opening area I, the water and oxygen will not damage the functionality of the display film in the part 1020 of the metal structure close to the display area II, ensuring the display in the display area II.
  • the film is working normally.
  • transition area is an annular area or a box-shaped area.
  • the transition area IV is an annular area
  • the transition area IV is a box-shaped area
  • the display area II as shown in FIG. 1a is set to completely surround the aperture area I
  • the transition area IV is located between the aperture area I and the display area II; in the display area II and the peripheral area III as shown in FIG. 1b
  • the opening area I is surrounded together
  • a part of the transition area IV is located between the opening area I and the display area II
  • the other part of the transition area IV is located between the opening area I and the peripheral area III.
  • the box-shaped area may be a rounded box-shaped area and a right-angled box-shaped area, which is not limited here.
  • the display film layer includes at least one of a buffer layer, a light shielding layer, an active layer, a gate insulating layer, a gate pattern, an interlayer insulating layer, a metal layer, and a passivation layer.
  • the isolation pillar and the metal layer are located on the same layer and have the same material.
  • the isolation pillars and the metal layer are both located on the flat layer, and in addition, the isolation pillars and the metal layer have the same layer structure.
  • the metal layer also includes a fourth metal layer and a fifth metal layer
  • the second metal layer is located between the first metal layer and the substrate film layer
  • the fifth metal layer is located between the fourth metal layer and the underlying film layer
  • the material of the first metal layer is the same as the material of the fourth metal layer
  • the material of the second metal layer is the same as the material of the fifth metal layer.
  • the embodiment of the present disclosure also provides a display device including the display substrate as described above.
  • the display device can be a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.

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Abstract

本公开提供一种显示基板及其制作方法、和显示装置，其中，显示基板包括衬底膜层和功能膜层；所述显示基板包括显示区域和开孔区域。所述制作方法包括：在衬底膜层上形成多层功能膜层；对所述开孔区域中的至少一层所述功能膜层进行刻蚀以形成贯穿所述至少一层功能膜层的第一过孔；形成覆盖所述显示区域和暴露所述第一过孔的过渡层；以所述过渡层为掩模，形成所述开孔区域内的第二过孔，所述第二过孔贯穿所述衬底膜层和除所述至少一层功能膜层之外的其他所有所述功能膜层；去除所述过渡层。

Description

显示基板及其制作方法、和显示装置
相关申请的交叉引用
本申请主张在2020年1月17日在中国提交的中国专利申请No.202010051632.6的优先权，其全部内容通过引用包含于此。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示基板及其制作方法、和显示装置。
背景技术
随着电子信息技术的不断发展，显示装置(例如智能手机、平板电脑等)的应用越来越广泛，在人们的工作以及生活中均扮演着不可或缺的角色。目前，显示装置的显示屏正往大屏化、全屏化方向发展。通常，显示装置(例如手机、平板电脑等)具有摄像装置(或成像装置)，该摄像装置通常设置在显示屏显示区域外的一侧。但是，由于摄像装置的安装需要一定的位置，因此不利于显示屏的全屏化、窄边框设计。
相关技术中，通过将摄像装置与显示屏的显示区域结合在一起，在显示区域中开孔为摄像装置预留安装位置，以便于实现窄边框的设计实现显示屏显示区域的最大化。然而，相关技术中，在显示区域内开孔后会在孔中残留无法被清除的物质，阻碍了摄像装置的安装。
发明内容
本公开实施例提供一种显示基板及其制作方法、和显示装置。
第一方面，本公开实施例提供一种显示基板的制作方法，所述显示基板包括衬底膜层和功能膜层；
所述显示基板包括显示区域和开孔区域；
所述方法包括：
在衬底膜层上形成多层功能膜层；
对所述开孔区域中的至少一层所述功能膜层进行刻蚀以形成贯穿所述至少一层功能膜层的第一过孔；
形成覆盖所述显示区域和暴露所述第一过孔的过渡层；
以所述过渡层为掩膜，形成所述开孔区域内的第二过孔，所述第二过孔贯穿所述衬底膜层和除所述至少一层功能膜层之外的其他所有所述功能膜层；
去除所述过渡层。
进一步地，所述形成覆盖所述显示区域和暴露所述第一过孔的过渡层的步骤，包括：
沉积覆盖所述显示区域和所述开孔区域的过渡材料层；
在所述过渡材料层上形成光刻胶，对光刻胶进行曝光，显影后形成覆盖所述显示区域和暴露所述第一过孔的第一光刻胶图形；
以所述第一光刻胶图形为掩膜，对位于所述开孔区域内的过渡材料层进行刻蚀，形成覆盖所述显示区域和暴露所述第一过孔的过渡层；
去除所述第一光刻胶图形。
进一步地，所述过渡层包括金属层或金属氧化物层。
进一步地，在所述衬底膜层上形成多层功能膜层的步骤，包括：
在所述衬底膜层上形成阳极；
所述形成覆盖所述显示区域和暴露所述第一过孔的过渡层的步骤，包括：
形成覆盖所述显示区域和所述暴露所述第一过孔的过渡层，所述过渡层覆盖所述阳极；
所述去除所述过渡层的步骤，包括：
利用第一刻蚀液刻蚀掉所述过渡层且保留所述阳极。
进一步地，所述过渡层的材料包括铟镓锌氧化物，所述阳极的材料包括铟锡氧化物，所述第一刻蚀液为硫酸溶液。
进一步地，在在所述衬底膜层上形成多层功能膜层的步骤，包括：
在所述衬底膜层上形成平坦材料层；
在所述显示区域内形成覆盖部分所述平坦材料层的像素绝缘层；
所述对所述开孔区域中的至少一层所述功能膜层进行刻蚀以形成贯穿所 述至少一层功能膜层的第一过孔的步骤，包括：
形成覆盖所述像素绝缘层和所述平坦材料层的光刻胶，对光刻胶进行曝光，显影后形成第二光刻胶图形，所述第二光刻胶图形暴露所述开孔区域；
以所述第二光刻胶图形为掩膜，对所述平坦材料层进行刻蚀，以形成平坦层和贯穿所述平坦层的第三过孔；
去除所述第二光刻胶图形。
进一步地，所述显示基板还包括位于所述显示区域和所述开孔区域之间的过渡区域；
在所述衬底膜层上形成平坦材料层的步骤之前，还包括：
形成位于所述衬底膜层之上的金属图形，所述金属图形包括在垂直于衬底膜层的方向上依次层叠设置的第一金属层和第二金属层，所述第二金属层位于所述第一金属层和所述衬底膜层之间，所述第一金属层与所述第二金属层为不同金属材质；
所述以所述第二光刻胶图形为掩膜，对所述平坦材料层进行刻蚀，形成平坦层的步骤，包括：
以所述第二光刻胶图形为掩膜，对位于所述过渡区域内的所述平坦材料层进行刻蚀形成贯穿所述平坦层的环形过孔，以暴露所述过渡区域内的金属图形，所述环形过孔包围所述第三过孔设置且与所述第三过孔相互连通；
利用第二刻蚀液对位于所述过渡区域内的金属图形进行湿法刻蚀，形成隔离柱，所述第二金属层在所述第二刻蚀液内的刻蚀速度大于所述第一金属层在所述第二刻蚀液内的刻蚀速度。
进一步地，在形成覆盖所述显示区域和所述开孔区域的平坦材料层的步骤之前，所述方法还包括：
在所述显示区域和所述开孔区域内形成至少一层功能膜层；
在去除所述第二光刻胶图形的步骤之后，还包括：
形成覆盖所述显示区域和所述开孔区域的光刻胶，对光刻胶进行曝光，显影后形成覆盖所述显示区域且暴露所述开孔区域的第三光刻胶图形；
以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的至少一层功能膜层进行刻蚀，形成贯穿所述至少一层功能膜层的第四过孔，所述第四过孔 与所述第三过孔相互贯通且均属于所述第一过孔；
去除所述第三光刻胶图形。
进一步地，所述至少一层功能膜层包括缓冲层、遮光层、有源层、栅极绝缘层、栅极图形、层间绝缘层、金属层和钝化层中的至少一层。
进一步地，所述衬底膜层包括阻隔层；
所述以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的至少一层功能膜层进行刻蚀，形成贯穿所述至少一层功能膜层的第四过孔的步骤，包括：
以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的全部的功能膜层和部分所述阻隔层进行刻蚀，形成第四过孔。
进一步地，在形成覆盖所述显示区域和所述开孔区域的平坦材料层的步骤之前，所述方法还包括：
在所述显示区域和所述开孔区域内形成至少一层功能膜层，其中，形成目标功能膜层的步骤，包括：
形成覆盖所述显示区域和所述开孔区域的材料层；
在所述材料层上形成光刻胶，对光刻胶进行曝光，显影后形成第四光刻胶图形，所述第四光刻胶图形暴露所述开孔区域；
以所述第四光刻胶图形为掩膜对所述材料层进行刻蚀，形成目标显示膜层，所述目标显示膜层暴露所述开孔区域，所述目标显示膜层为所述至少一层功能膜层中的任一功能膜层。
进一步地，在所述去除所述过渡层的步骤之后，还包括：
依次形成发光层和阴极；
将所述显示基板从承载基板上剥离。
进一步地，所述显示基板还包括周边区域，所述开孔区域和所述显示区域被所述周边区域包围，在所述周边区域内设置有与所述显示区域内的显示器件相连接的走线。
进一步地，所述第一过孔在所述衬底膜层所在平面上的正投影与所述第二过孔在所述衬底膜层所在平面上的正投影重叠。
第二方面，本公开实施例还提供一种显示基板，所述显示基板包括显示 区域和开孔区域；所述显示基板包括衬底膜层和显示膜层，所述显示膜层包括多层功能膜层，其中，所述显示基板开设有第一过孔和第二过孔，所述第一过孔贯穿至少一层所述功能膜层，所述第二过孔贯穿所述衬底膜层和除所述至少一层功能膜层之外的其他所有功能膜层，所述第一过孔在所述衬底膜层所在平面上的正投影与所述第二过孔在所述衬底膜层所在平面上的正投影重叠。
进一步地，所述第二过孔的第一开口尺寸大于所述第二过孔的第二开口尺寸，所述第二过孔的第一开口尺寸为所述第二过孔靠近所述显示膜层的一端的开口尺寸，所述第二过孔的第二开口尺寸为所述第二过孔远离所述显示膜层的一端的开口尺寸。
进一步地，所述显示膜层包括平坦层，所述第一过孔包括贯穿所述平坦层的第三过孔。
进一步地，所述显示膜层还包括位于所述平坦层和所述衬底膜层之间的其他功能膜层，所述第一过孔还包括第四过孔，所述第四过孔贯穿所述其他功能膜层中的至少一层功能膜层。
进一步地，所述衬底膜层包括阻隔层；所述第四过孔贯穿至少一层功能膜层和部分所述阻隔层。
进一步地，所述第四过孔在垂直于所述衬底膜层方向上的深度大于所述阻隔层与所述平坦层之间的间隔距离。
进一步地，所述显示基板还包括位于所述显示区域和所述开孔区域之间的过渡区域，所述平坦层还包括在所述过渡区域内贯穿所述平坦层的环形过孔，所述环形过孔包围所述第三过孔设置，且与第三过孔相互连通；所述环形过孔内设有隔离柱，所述隔离柱包括在垂直于所述衬底膜层的方向上依次层叠设置的第一金属层和第二金属层，所述第二金属层位于所述第一金属层和所述衬底膜层之间，所述第二金属层在衬底膜层上的正投影位于所述第一金属层在所述衬底膜层上的正投影内部。
进一步地，所述过渡区域为环形区域或方框形区域。
进一步地，所述显示膜层包括缓冲层、遮光层、有源层、栅极绝缘层、栅极图形、层间绝缘层、金属层和钝化层中的至少一层。
进一步地，所述隔离柱与所述金属层位于同一层且材质相同。
进一步地，所述显示膜层由所述多层功能膜层构成，所述第一过孔在所述衬底膜层所在平面上的正投影位于所述第二过孔在所述衬底膜层所在平面上的正投影的内部。
进一步地，所述显示基板还包括周边区域，所述开孔区域和所述显示区域被所述周边区域包围，在所述周边区域内设置有与所述显示区域内的显示器件相连接的走线。
第三方面，本公开实施例还提供一种显示装置，包括如上所述的显示基板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对本公开实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1a为本公开一实施例提供的显示基板中各区域的位置示意图之一；
图1b为本公开一实施例提供的显示基板中各区域的位置示意图之二；
图2为本公开一实施例提供的显示基板的制作方法的流程图；
图3为本公开另一实施例提供的显示基板的制作方法中形成过渡层之前的结构示意图；
图4为本公开另一实施例提供的显示基板的制作方法中形成过渡层之后的结构示意图；
图5为本公开另一实施例提供的显示基板的制作方法中形成第二过孔之后的结构示意图；
图6本公开另一实施例提供的显示基板的制作方法中形成过渡材料层和光刻胶的结构示意图；
图7本公开另一实施例提供的显示基板的制作方法中形成过渡材料层和第一光刻胶图形的结构示意图；
图8为本公开另一实施例提供的显示基板的制作方法中形成过渡层未去 除第一光刻胶图形的结构示意图；
图9为本公开另一实施例提供的显示基板的制作方法中形成过渡层且去除第一光刻胶图形的结构示意图；
图10a-10c为本公开另一实施例提供的显示基板的制作方法中形成一种隔离柱的过程示意图；
图11a-11c为本公开另一实施例提供的显示基板的制作方法中形成另一种隔离柱的过程示意图；
图12为本公开一实施例提供的显示基板的结构示意图。
具体实施方式
下面将结合本公开实施例中的附图，对本公开实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本公开一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本公开保护的范围。
本公开实施例提供一种显示基板的制作方法，显示基板包括衬底膜层和功能膜层；所述显示基板如图1a和图1b所示，包括显示区域、开孔区域和周边区域，所述开孔区域和所述显示区域被所述周边区域包围设置；如图2所示，所述方法包括：
步骤201：在衬底膜层上形成多层功能膜层；
步骤202：对所述开孔区域中的至少一层所述功能膜层进行刻蚀形成第一过孔；
步骤203：形成覆盖所述显示区域和暴露所述开孔区域第一过孔的过渡层；
步骤204：以所述过渡层为掩膜，形成所述开孔区域内的第二过孔，所述第一过孔和所述第二过孔贯穿所有功能膜层和所述衬底膜层；
步骤205：去除覆盖所述显示区域的所述过渡层。
本公开实施例中，通过在衬底膜层上形成多层功能膜层之后，在开孔区域内对至少一层功能膜层进行刻蚀，形成第一过孔；之后，再以过渡层为掩膜在开孔区域内形成第二过孔，所述第一过孔和所述第二过孔连通以贯穿所 有所述功能膜层和所述衬底膜层。这样，能够避免事先对衬底膜层开孔造成之后在衬底膜层上形成的多层功能膜层的材料进入衬底膜层的孔内的情况，能够降低显示基板制作完成时衬底膜层孔内材料沉积的厚度，确保衬底膜层孔内材料沉积的厚度处于深孔清除能力范围内，便于后续对衬底膜层孔内的材料进行彻底的清除，便于摄像装置的安装。因此，本公开提供的技术方案能够确保彻底清除第二过孔内的材料，便于摄像装置的安装。
本公开实施例中开孔区域Ⅰ、显示区域Ⅱ和周边区域Ⅲ可以如图1a和图1b所示，开孔区域Ⅰ内用于设置显示装置所需的传感器件，显示区域Ⅱ内排布有显示器件用于发光显示，周边区域Ⅲ内部排布有连接于显示区域Ⅱ内显示器件的信号走线。
显示区域Ⅱ可以完全包围开孔区域Ⅰ设置，如图1a所示，也可以显示区域Ⅱ半包围开孔区域Ⅰ设置，即由显示区域Ⅱ和周边区域Ⅲ共同包围开孔区域Ⅰ设置，如图1b所示。开孔区域Ⅰ可以是用于安装摄像装置的区域，通过在此区域内刻蚀功能膜层，形成使摄像装置插入显示基板内的开孔；开孔区域Ⅰ也可以是其他对功能膜层开孔的区域，例如：在有机发光二极管(organic light-emitting diode，OLED)柔性显示装置中，为了提升OLED显示装置的可拉伸性，在OLED柔性显示装置的多个区域内刻蚀功能膜层形成开孔。
如图1a和图1b所示，上述显示基板还可以包括过渡区域Ⅳ。过渡区域Ⅳ可以位于开孔区域Ⅰ和显示区域Ⅱ之间，过渡区域Ⅳ内可以设置隔离柱或隔离槽等隔离结构来阻挡从开孔区域Ⅰ进入的水氧侵蚀显示区域Ⅱ内的显示膜层，确保显示膜层的正常工作。
需要说明的是，在开孔区域Ⅰ为圆形区域时，过渡区域Ⅳ为环形区域，在开孔区域Ⅰ为矩形区域时，过渡区域Ⅳ为方框形区域。另外，在如图1a所示显示区域Ⅱ完全包围开孔区域Ⅰ设置的情况下，过渡区域Ⅳ位于开孔区域Ⅰ和显示区域Ⅱ之间；在如图1b所示显示区域Ⅱ和周边区域Ⅲ共同包围开孔区域Ⅰ设置的情况下，一部分过渡区域Ⅳ位于开孔区域Ⅰ和显示区域Ⅱ之间，另一部分过渡区域Ⅳ位于开孔区域Ⅰ和周边区域Ⅲ之间。其中，方框形区域可以为圆角方框形区域和直角方框形区域，此处不作限定。
如图3所示，显示基板中已经在承载基板410上形成衬底膜层420，且 在衬底膜层上形成有多层功能膜层430，其中，多层功能膜层430可以包括薄膜晶体管阵列层440、平坦层491、像素绝缘层492、阳极480、支撑图形450等显示膜层中的至少一项。
在衬底膜层420上形成多层功能膜层430的过程中，可以是多层功能膜层430的一部分功能膜层在图案化时去除了位于开孔区域Ⅰ的部分，另一部分功能膜层在图案化时未去除位于开孔区域Ⅰ的部分，则刻蚀形成第一过孔401为刻蚀在图案化时未去除位于开孔区域Ⅰ的部分的这一部分功能膜层中的至少一层功能膜层；也可以是多层功能膜层430的全部功能膜层在图案化时均未去除位于开孔区域Ⅰ的部分，则刻蚀形成第一过孔401为刻蚀在多层功能膜层430中至少一层功能膜层。
本公开实施例中，在形成多层功能膜层430之后，对开孔区域Ⅰ中的至少一层功能膜层430进行刻蚀，形成第一过孔401，如图3所示。本公开实施例中，并不限定形成第一过孔401的刻蚀次数，可以是通过一次刻蚀形成第一过孔401，也可以是多次刻蚀形成第一过孔401，在多次刻蚀过程中一次刻蚀可以是刻蚀一层功能膜层，也可以是刻蚀多层功能膜层，本公开实施例对于具体何种方式形成第一过孔401不作限定。
在形成第一过孔401之后，如图4所示，形成覆盖显示区域Ⅱ且暴露所述开孔区域Ⅰ的过渡层460，过渡层460也可以覆盖周边区域Ⅲ，以保护在周边区域Ⅲ内的形成的结构(例如：对位标记)不受影响，过渡层460还可以覆盖过渡区域Ⅳ。即过渡层460在承载基板410上的正投影与非开孔区域(显示基板上除开孔区域Ⅰ之外的区域)重合。过渡层460的形成可以是整层(包括开孔区域Ⅰ、显示区域Ⅱ、周边区域Ⅲ和过渡区域Ⅳ)沉积过渡层材料时遮盖开孔区域Ⅰ，之后揭开遮盖开孔区域Ⅰ的结构使沉积在开孔区域Ⅰ的过渡层材料与沉积在显示区域Ⅱ的过渡层材料撕断，从而得到暴露开孔区域Ⅰ的过渡层460；也可以是其他方式形成过渡层460，具体采用何种方式形成过渡层460此处不作限定。
如图4所示，通过以过渡层460为掩膜刻蚀位于开孔区域Ⅰ内剩余的所有膜层，形成在开孔区域Ⅰ内贯穿剩余所有膜层的第二过孔402。上述剩余的所有膜层可以是在第一过孔401贯穿所有已形成的功能膜层后剩余的衬底膜 层，也可以是在第一过孔401仅贯穿部分功能膜层后剩余的功能膜层和衬底膜层。形成第二过孔402的刻蚀方式可以是干法刻蚀。
形成第二过孔402之后，去除过渡层460，如图5所示，从而继续进行显示基板后续膜层的制备。去除过渡层460不会额外增加显示基板的厚度，也不会改变显示基板的层结构。
进一步地，所述形成覆盖所述显示区域和暴露所述开孔区域第一过孔的过渡层的步骤，包括：
沉积覆盖所述显示区域和所述开孔区域的过渡材料层；
在所述过渡材料层上形成光刻胶，对光刻胶进行曝光，显影后形成覆盖所述显示区域和暴露所述第一过孔的第一光刻胶图形；
以所述第一光刻胶图形为掩膜，对位于所述开孔区域内的过渡材料层进行刻蚀，形成覆盖所述显示区域和暴露所述第一过孔的过渡层；
去除所述第一光刻胶图形。
本实施例中，首先，整层沉积过渡层材料，得到覆盖开孔区域Ⅰ和显示区域Ⅱ的过渡材料层461，如图6所示。
其次，形成过渡材料层461之后，在过渡材料层461上涂覆光刻胶471；利用透光区域与开孔区域Ⅰ对应的掩膜版对光刻胶471进行遮盖后，通过紫外光对光刻胶471中位于开孔区域Ⅰ的部分进行曝光；曝光后，利用显影液去除光刻胶中曝光的部分，形成第一光刻胶图形470，如图7所示。
然后，以第一光刻胶图形470为掩膜，刻蚀掉过渡材料层461中位于开孔区域Ⅰ内的部分，得到暴露开孔区域Ⅰ第一过孔401的过渡层460，如图8所示。
最后，利用刻蚀液溶解掉第一光刻胶图形470，如图9所示。其中，刻蚀液可以为双氧水、去离子水等。
进一步地，所述过渡层460包括金属层或金属氧化物层。
本实施例中，可以采用金属层作为过渡层460，也可以采用或金属氧化物层作为过渡层460，还可以采用金属与金属氧化物混合层作为过渡层460。
具体的，以过渡层460包括金属氧化物层为例，过渡层460可以包括铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)层。
进一步地，在所述衬底膜层上形成多层功能膜层的步骤，还包括：
在所述衬底膜层上形成阳极；
所述形成覆盖所述显示区域和暴露所述第一过孔的过渡层的步骤，包括：
形成覆盖所述显示区域和所述暴露所述第一过孔的过渡层，所述过渡层覆盖所述阳极；
所述去除所述过渡层的步骤，包括：
利用第一刻蚀液刻蚀掉所述过渡层且保留所述阳极。
即在本实施例中，如图4所示，在刻蚀形成第一过孔401之前，承载基板410上已经形成有衬底膜层420和阳极480，其中，阳极480位于显示区域Ⅱ内。在形成第一过孔401之后形成的过渡层460在显示区域Ⅱ内覆盖了阳极480。
本实施例中，在形成第二过孔402之后，利用第一刻蚀液刻蚀过渡层460以去除过渡层460，且在去除过渡层460过程中不会刻蚀阳极480，确保不会影响显示基板的结构。
具体的，在上述过渡层460包括IGZO层，阳极480包括铟锡氧化物(Indium Tin Oxide，ITO)时，第一刻蚀液可以为硫酸溶液，只去除IGZO层而不会去除ITO。
进一步地，在所述衬底膜层上形成多层功能膜层的步骤，包括：
在所述衬底膜层上形成平坦材料层；
在所述显示区域内形成覆盖部分所述平坦材料层的像素绝缘层；
所述对所述开孔区域中的至少一层所述功能膜层进行刻蚀形成第一过孔的步骤，包括：
形成覆盖所述像素绝缘层和所述平坦材料层的光刻胶，对光刻胶进行曝光，显影后形成第二光刻胶图形，所述第二光刻胶图形暴露所述开孔区域；
以所述第二光刻胶图形为掩膜，对所述平坦材料层进行刻蚀，形成平坦层和贯穿所述平坦层的第三过孔；
去除所述第二光刻胶图形。
即在本实施例中，在所述显示区域Ⅱ形成的多层功能膜层330包括平坦层PLN 491和像素绝缘层PDL 492，如图4所示。
形成多层功能膜层的过程包括：整层沉积平坦层材料，得到覆盖开孔区域Ⅰ和显示区域Ⅱ的平坦材料层，以及在显示区域Ⅱ内的平坦材料层上形成图案化的像素绝缘层492。
然后，开始形成第一过孔401，即在形成像素绝缘层492之后，在开孔区域Ⅰ和显示区域Ⅱ涂覆光刻胶以覆盖像素绝缘层492和平坦材料层；利用透光区域与开孔区域Ⅰ对应的掩膜版对光刻胶进行遮盖后，通过紫外光对光刻胶中位于开孔区域Ⅰ的部分进行曝光；曝光后，利用显影液去除光刻胶中曝光的部分，形成第二光刻胶图形；并以第二光刻胶图形为掩膜，刻蚀掉平坦材料层中位于开孔区域Ⅰ内的部分，得到平坦层491，如图4所示，所述第三过孔403贯穿所述平坦层491，第三过孔403为第一过孔401的一部分，即第三过孔403为上述提到的多次刻蚀得到第一过孔401的情况中通过一次刻蚀得到的过孔。
最后，利用刻蚀液溶解掉第二光刻胶图形，其中，刻蚀液可以为双氧水、去离子水等。
进一步地，所述显示基板还包括位于所述显示区域和所述开孔区域之间的过渡区域；
在所述衬底膜层上形成平坦材料层的步骤之前，还包括：
形成位于所述衬底膜层之上的金属图形，所述金属图形包括在垂直于所述衬底膜层的方向上依次层叠设置的第一金属层和第二金属层，所述第二金属层位于所述第一金属层和所述衬底膜层之间，所述第一金属层与所述第二金属层为不同金属材质；
所述以所述第二光刻胶图形为掩膜，对所述平坦材料层进行刻蚀，形成平坦层的步骤，包括：
以所述第二光刻胶图形为掩膜，对位于所述过渡区域内的所述平坦材料层进行刻蚀形成贯穿所述平坦层的环形过孔，以暴露所述过渡区域内的金属图形，所述环形过孔包围所述第三过孔设置且与所述第三过孔相通；
利用第二刻蚀液对位于所述过渡区域内的金属图形进行湿法刻蚀，形成隔离柱，所述第二金属层在所述第二刻蚀液内的刻蚀速度大于所述第一金属层在所述第二刻蚀液内的刻蚀速度。
本实施例中，如图4所示，在显示区域Ⅱ和开孔区域Ⅰ之间的过渡区域Ⅳ内形成了隔离柱493，用于防止从开孔区域Ⅰ处进入的水氧侵蚀显示区域Ⅱ内的显示膜层，确保显示区域Ⅱ内的显示膜层正常工作。
具体的，在形成平坦材料层之前在显示区域Ⅱ和过渡区域Ⅳ内形成金属图形，其中，位于显示区域Ⅱ内的金属图形可以用于作为薄膜晶体管阵列层中的源极金属或漏极金属，位于过渡区域Ⅳ内的金属图形包围开孔区域Ⅰ设置。如图1a所示，开孔区域Ⅰ的外轮廓为圆形时，位于过渡区域Ⅳ内的金属图形为金属圆环。其中，如图10a所示，金属图形4930在垂直于衬底膜层的方向上依次层叠设置有第一金属层4931和第二金属层4932，其中，第二金属层4932与第一金属层4931为不同材质的金属，这样能够使得第二金属层4932与第一金属层4931在同一刻蚀条件下可以有不同的刻蚀速度。本实施例中，选取刻蚀速度大的材质作为第二金属层的材质，刻蚀速度小的材质作为第一金属层4931的材质。
在对平坦材料层进行刻蚀，形成平坦层491的过程中除了去除平坦材料层位于开孔区域Ⅰ的部分(形成第三过孔403)，还去除了平坦材料层位于过渡区域Ⅳ的部分(环形过孔405)，从而暴露出位于过渡区域Ⅳ内的金属图形。需要说明的是，去除平坦材料层位于开孔区域Ⅰ的部分和去除了平坦材料层位于过渡区域Ⅳ的部分可以是同时进行的，即通过一次工艺同时形成相互连通的第三过孔403和环形过孔405。
然后，利用第二刻蚀液对位于过渡区域Ⅳ内的金属图形进行湿法刻蚀，由于第二金属层4932的刻蚀速度大于第一金属层4931的刻蚀速度，这样逐渐在第一金属层4931和第二金属层4932之间形成台阶4934，得到隔离柱493，如图10b所示，隔离柱493中第二金属层4932在衬底膜层上的正投影位于所述第一金属层4931在衬底膜层上的正投影内部。这样，后续形成的覆盖显示区域Ⅱ和过渡区域Ⅳ的显示膜层在具有台阶4934的隔离柱493处断开，即如图10c显示膜层处于隔离柱493靠近开孔区域Ⅰ的部分1010会与显示膜层处于金属结构493靠近显示区域Ⅱ的部分1020断开。这样，水氧侵入显示膜层处于金属结构靠近开孔区域Ⅰ的部分1010时，水氧不会破坏显示膜层处于金属结构靠近显示区域Ⅱ的部分1020的功能性，确保显示区域Ⅱ内的显示 膜层正常工作。
另外，金属图形4930还可以是三层结构，即在垂直于衬底膜层的方向上依次层叠设置有第一金属层4931、第二金属层4932和第三金属层4933，如图11a所示；其中，第一金属层4931和第三金属层4933为相同的金属材质，第一金属层4931和第二金属层4932为不同的金属材质，在第二刻蚀液下第二金属层4932的刻蚀速度大于第一金属层4931和第三金属层4933的刻蚀速度，这样逐渐在金属图形中形成凹口4935得到隔离柱493，如图11b所示。这样，后续形成的覆盖显示区域Ⅱ和过渡区域Ⅳ的显示膜层在具有凹口4935的隔离柱493处断开，即如图11c显示膜层处于隔离柱493靠近开孔区域Ⅰ的部分1010会与显示膜层处于金属结构493靠近显示区域Ⅱ的部分1020断开。这样，水氧侵入显示膜层处于金属结构靠近开孔区域Ⅰ的部分1010时，水氧不会破坏显示膜层处于金属结构靠近显示区域Ⅱ的部分1020的功能性，确保显示区域Ⅱ内的显示膜层正常工作。
进一步地，在形成覆盖所述显示区域和所述开孔区域的平坦材料层的步骤之前，所述方法还包括：
在所述显示区域和所述开孔区域内形成至少一层功能膜层；
在去除所述第二光刻胶图形的步骤之后，还包括：
形成覆盖所述显示区域和所述开孔区域的光刻胶，对光刻胶进行曝光，显影后形成覆盖所述显示区域且暴露所述开孔区域的第三光刻胶图形；
以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的至少一层功能膜层进行刻蚀，形成贯穿所述至少一层功能膜层的第四过孔，所述第四过孔与所述第三过孔相互贯通且均属于所述第一过孔；
去除所述第三光刻胶图形。
即本实施例中，在形成平坦材料层之前，还在衬底膜层420上形成有至少一层功能膜层，且这些功能膜层中的至少一层功能膜层在图案化的过程中并未去除位于开孔区域Ⅰ的部分。这些功能膜层如图3所示，可以包括：缓冲层441、遮光层、有源层442、栅极绝缘层443、栅极图形444、层间绝缘层445、金属层和钝化层446中的至少一层。
本实施例中，在形成第三过孔403贯穿平坦层491之后，再对图案化的 过程中并未去除位于开孔区域Ⅰ的部分的至少一层功能膜层进行刻蚀，形成第四过孔404。需要说明的是，第四过孔404可以只贯穿一层功能膜层，也可以贯穿多层功能膜层，此处不作限定。
形成后的第四过孔404与第三过孔403相互贯通且均属于第一过孔401，这样在开孔区域Ⅰ内剩余的功能膜层和衬底膜层的厚度即为后续形成的第二过孔402的厚度。本实施例中，所述第四过孔404在垂直于衬底膜层420的方向上的深度和后续形成的第二过孔402在垂直于衬底膜层420的方向上的深度之和等于所述平坦层491与所述承载基板410之间在垂直于所述衬底膜层420方向上的间隔距离d1，如图4所示。
通过形成第四过孔404能够减轻后续形成第二过孔402时需要刻蚀开孔区域Ⅰ内功能膜层的数量，降低形成第二过孔402刻蚀难度。
进一步地，如图3所示，所述衬底膜层包括阻隔层；
所述以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的至少一层功能膜层进行刻蚀，形成贯穿所述至少一层功能膜层的第四过孔的步骤，包括：
以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的至少一层功能膜层和部分所述阻隔层进行刻蚀，形成第四过孔。
本实施例中，如图3和4中所示，形成第四过孔404时不仅贯穿了开孔区域Ⅰ内衬底膜层420与平坦层491之间所有的功能膜层，还刻蚀了部分阻隔层421。本实施例中，所述第四过孔404在垂直于衬底膜层420的方向上的深度等于所述平坦层491与未刻蚀的所述阻隔层421之间在垂直于所述衬底膜层420方向上的间隔距离d2，即所述第四过孔404在垂直于衬底膜层420的方向上的深度大于所述阻隔层与所述平坦层之间的间隔距离。
由于阻隔层421为无机层，剩余的部分阻隔层能够防止透过其他衬底膜层422中有机层的水氧进入功能膜层，能够在形成第二过孔402前保护功能膜层不受水氧的侵入。这样，第四过孔404在确保形成第二过孔402前保护功能膜层不受水氧的侵入的情况下，尽可能的减少了形成第二过孔402所需刻蚀的膜层。
进一步地，在形成覆盖所述显示区域和所述开孔区域的平坦材料层的步 骤之前，所述方法还包括：
在所述显示区域和所述开孔区域内形成至少一层功能膜层，其中，形成目标功能膜层的步骤，包括：
形成覆盖所述显示区域和所述开孔区域的材料层；
在所述材料层上形成光刻胶，对光刻胶进行曝光，显影后形成第四光刻胶图形，所述第四光刻胶图形暴露所述开孔区域；
以所述第四光刻胶图形为掩膜对所述材料层进行刻蚀，形成目标显示膜层，所述目标显示膜层暴露所述开孔区域，所述目标显示膜层为所述至少一层功能膜层中的任一功能膜层。
即本实施例中，在形成平坦材料层之前，还在衬底膜层420上形成有至少一层功能膜层。这些功能膜层的每一功能膜层在图案化的过程中均去除了位于开孔区域Ⅰ的部分。这种情况下，贯穿平坦层491即形成了贯穿多层功能膜层430的第一过孔401。
在衬底膜层420上形成有至少一层功能膜层如图3所示，目标功能膜层为缓冲层441、遮光层、有源层442、栅极绝缘层443、栅极图形444、层间绝缘层445、金属层和钝化层446中的任一层。
进一步地，在所述去除所述过渡层的步骤之后，还包括：
依次形成发光层和阴极；
将所述显示基板从承载基板上剥离，以去除所述阴极和所述发光层在制作过程中进入所述第二过孔内的材料。
本实施例中，在去除过渡层460之后，开孔区域Ⅰ内已经形成了贯穿所有在承载基板410上形成的衬底膜层420和多层功能膜层430的通道。
发光层的形成过程可以是：在整层沉积发光材料，形成发光层，此时会有发光层材料沉积在第二过孔402内。阴极的形成过程可以参照发光层的形成过程，此处不再赘述。
在阴极和发光层的形成过程中，会有阴极材料和发光层材料沉积在第二过孔402内的承载基板410上。后续将显示基板从承载基板410上剥离时，承载基板410上的阴极材料会与阴极撕断，同样地，承载基板410上的发光层材料会与发光层撕断，从而去除掉位于第二过孔402内的阴极材料和发光 层材料。
需要说明的是，发光层材料包括形成于显示区域的发光材料和整层形成的其他材料，发光层材料中沉积在第二过孔402内的为整层形成的其他材料。
本公开实施例还提供一种显示基板，如图12所示，所述显示基板包括显示区域、开孔区域和周边区域，所述开孔区域和所述显示区域被所述周边区域包围设置；显示基板包括衬底膜层420和显示膜层430，所述显示膜层430包括多层功能膜层，其中，所述显示基板开设有第一过孔401和第二过孔402，所述第一过孔401贯穿至少一层功能膜层，所述第一过孔401和所述第二过孔402贯穿所述显示基板的显示膜层430和衬底膜层420，所述第一过孔401在所述衬底膜层420上的正投影位于所述第二过孔402在所述衬底膜层420上的正投影内部。
本公开实施例提供的显示基板为通过上述显示基板的制作方法制作而成，其中，对在形成第一过孔401之后，以过渡层460为掩膜对开孔区域Ⅰ内的剩余的功能膜层进行刻蚀，形成贯穿剩余的功能膜层的第一过孔401所采用的可以是干法刻蚀，通过调整刻蚀的时长能够使得第二过孔402的开孔尺寸大于第一过孔401的开孔尺寸，如图4所示。
这样，如图12所示，在第二过孔402和第一过孔401相连的位置出现了一个缺口405，即沿第一过孔401的侧壁到第二过孔402的侧壁中间出现了一个空缺。缺口405的作用与图10c中的台阶4934和图11c中的凹口4935作用相同，均用于对同时形成的膜层中的两部分进行隔断。使得后续形成的发光层431和阴极432对应衬底膜层420的部分与对应显示膜层430的部分(该部分与位于显示区域Ⅱ的部分相接)断开，从而防止水氧侵入位于显示区域Ⅱ的发光层431和阴极432，确保位于显示区域Ⅱ内的发光层431和阴极432正常工作。
进一步地，如图12所示，所述第二过孔的第一开口尺寸大于所述第二过孔的第二开口尺寸，所述第二过孔的第一开口尺寸为所述第二过孔靠近所述显示膜层的一端的开口尺寸，所述第二过孔的第二开口尺寸为所述第二过孔远离所述显示膜层的一端的开口尺寸。
本实施例中，利用干法刻蚀第二过孔402，由于远离衬底膜层420的一 端受到的能量较大，从而第二过孔402的第一开口尺寸较大；靠近衬底膜层420的一端受到的能量较小，从而第二过孔402的第二开口尺寸较小。
进一步地，所述显示膜层430包括平坦层491，所述第一过孔401包括贯穿所述平坦层491的第三过孔403。
本实施例中，第一过孔401是通过多次刻蚀形成的。
具体的，在形成第一过孔401的过程中，包括：在形成平坦材料层和像素绝缘层492之后，在开孔区域Ⅰ和显示区域Ⅱ涂覆光刻胶以覆盖像素绝缘层492和平坦材料层；利用透光区域与开孔区域Ⅰ对应的掩膜版对光刻胶进行遮盖后，通过紫外光对光刻胶中位于开孔区域Ⅰ的部分进行曝光；曝光后，利用显影液去除光刻胶中曝光的部分，形成第二光刻胶图形；并以第二光刻胶图形为掩膜，刻蚀掉平坦材料层中位于开孔区域Ⅰ内的部分，得到平坦层491，第三过孔403贯穿所述平坦层491，所述第三过孔403位于所述开孔区域内，第三过孔403为第一过孔401的一部分。
进一步地，所述显示膜层430还包括位于所述平坦层491和所述衬底膜层420之间的其他功能膜层，所述第一过孔401还包括第四过孔404，所述第四过孔404贯穿所述其他功能膜层中的至少一层功能膜层。
在形成平坦材料层之前，还在衬底膜层420上形成有至少一层其他功能膜层，且这些功能膜层中的至少一层功能膜层在图案化的过程中并未去除位于开孔区域Ⅰ的部分。其他功能膜层如图3所示，可以包括：缓冲层441、遮光层、有源层442、栅极绝缘层443、栅极图形444、层间绝缘层445和钝化层446中的至少一层。
本实施例中，在形成第三过孔403贯穿平坦层491之后，再对图案化的过程中并未去除位于开孔区域Ⅰ的部分的至少一层功能膜层进行刻蚀，形成第四过孔404。需要说明的是，第四过孔404可以只贯穿一层功能膜层，也可以贯穿多层功能膜层，此处不作限定。第四过孔404所位于所述开孔区域内。
形成后的第四过孔404与第三过孔403相互贯通且均属于第一过孔401，这样在开孔区域Ⅰ内剩余的功能膜层和衬底膜层的厚度即为后续形成的第二过孔402的厚度。本实施例中，所述第四过孔404在垂直于衬底膜层420的 方向上的深度和后续形成的第二过孔402在垂直于衬底膜层420的方向上的深度之和等于所述平坦层491与所述承载基板410之间在垂直于所述衬底膜层420方向上的间隔距离d1，如图4所示。
通过形成第四过孔404能够减轻后续形成第二过孔402时需要刻蚀开孔区域Ⅰ内功能膜层的数量，降低形成第二过孔402的刻蚀难度。
进一步地，所述衬底膜层包括阻隔层；所述第四过孔贯穿所述其他功能膜层和部分所述阻隔层。
本实施例中，形成第四过孔404时不仅贯穿了开孔区域Ⅰ内衬底膜层420与平坦层491之间所有的其他功能膜层，还刻蚀了部分阻隔层421。
由于阻隔层421为无机层，剩余的部分阻隔层能够防止透过其他衬底膜层422中有机层的水氧进入功能膜层，能够在形成第二过孔402前保护功能膜层不受水氧的侵入。这样，第四过孔404在确保形成第二过孔402前保护功能膜层不受水氧的侵入的情况下，尽可能的减少了形成第二过孔402所需刻蚀的膜层。
其中，所述第四过孔404在垂直于所述衬底膜层420方向上的深度大于所述阻隔层421与所述平坦层491之间的间隔距离d3。
本实施例中，所述第四过孔404在垂直于衬底膜层420的方向上的深度等于所述平坦层491与未刻蚀的所述阻隔层421之间在垂直于所述衬底膜层420方向上的间隔距离d2，如图3所述，即第四过孔404在垂直于衬底膜层420方向上的深度大于阻隔层421与平坦层491之间的间隔距离d3。
进一步地，所述显示基板还包括位于所述显示区域Ⅱ和所述开孔区域Ⅰ之间的过渡区域Ⅳ，所述平坦层491还包括在所述过渡区域Ⅳ内贯穿所述平坦层491的环形过孔405，所述环形过孔405包围所述第三过孔403设置，且与第三过孔相互连通；所述环形过孔405内设有隔离柱493，所述隔离柱493如图10c所示，包括在垂直于所述衬底膜层的方向上依次设置的第一金属层4931和第二金属层4932，所述第二金属层4932位于所述第一金属层4931和所述衬底膜层430之间，所述第二金属层4932在衬底膜层430上的正投影位于所述第一金属层4931在所述衬底膜层430上的正投影内部。
在对平坦材料层进行刻蚀，形成平坦层491的过程中除了去除平坦材料 层位于开孔区域Ⅰ的部分(形成第三过孔403)，还去除了平坦材料层位于过渡区域Ⅳ的部分(环形过孔405)，从而暴露出位于过渡区域Ⅳ内的金属图形。需要说明的是，去除平坦材料层位于开孔区域Ⅰ的部分和去除了平坦材料层位于过渡区域Ⅳ的部分可以是同时进行的，即通过一次工艺同时形成相互连通的第三过孔403和环形过孔405。
如图10b所示，在第一金属层4931和第二金属层4932之间形成有台阶4934，这样，后续形成的覆盖显示区域Ⅱ和过渡区域Ⅳ的显示膜层在具有台阶4934的隔离柱493处断开，即如图10c显示膜层处于隔离柱493靠近开孔区域Ⅰ的部分1010会与显示膜层处于金属结构493靠近显示区域Ⅱ的部分1020断开。这样，水氧侵入显示膜层处于金属结构靠近开孔区域Ⅰ的部分1010时，水氧不会破坏显示膜层处于金属结构靠近显示区域Ⅱ的部分1020的功能性，确保显示区域Ⅱ内的显示膜层正常工作。
另外，隔离柱493还可以是三层结构，即在垂直于衬底膜层的方向上依次层叠设置有第一金属层4931、第二金属层4932和第三金属层4933，且在第一金属层4931、第二金属层4932和第三金属层4933中形成凹口4935得到隔离柱493，如图11b所示。这样，后续形成的覆盖显示区域Ⅱ和过渡区域Ⅳ的显示膜层在具有凹口4935的隔离柱493处断开，即如图11c显示膜层处于隔离柱493靠近开孔区域Ⅰ的部分1010会与显示膜层处于金属结构493靠近显示区域Ⅱ的部分1020断开。这样，水氧侵入显示膜层处于金属结构靠近开孔区域Ⅰ的部分1010时，水氧不会破坏显示膜层处于金属结构靠近显示区域Ⅱ的部分1020的功能性，确保显示区域Ⅱ内的显示膜层正常工作。
进一步地，所述过渡区域为环形区域或方框形区域。
在开孔区域Ⅰ为圆形区域时，过渡区域Ⅳ为环形区域，在开孔区域Ⅰ为矩形区域时，过渡区域Ⅳ为方框形区域。另外，在如图1a所示显示区域Ⅱ完全包围开孔区域Ⅰ设置的情况下，过渡区域Ⅳ位于开孔区域Ⅰ和显示区域Ⅱ之间；在如图1b所示显示区域Ⅱ和周边区域Ⅲ共同包围开孔区域Ⅰ设置的情况下，一部分过渡区域Ⅳ位于开孔区域Ⅰ和显示区域Ⅱ之间，另一部分过渡区域Ⅳ位于开孔区域Ⅰ和周边区域Ⅲ之间。其中，方框形区域可以为圆角方框形区域和直角方框形区域，此处不作限定。
进一步地，所述显示膜层包括缓冲层、遮光层、有源层、栅极绝缘层、栅极图形、层间绝缘层、金属层和钝化层中的至少一层。
其中，所述隔离柱与所述金属层位于同一层且材质相同。
隔离柱和金属层均位于平坦层上，另外，隔离柱和金属层的层结构相同。具体的，在隔离柱包括第一金属层和第二金属层时，金属层同样也包括第四金属层和第五金属层，第二金属层位于第一金属层与衬底膜层之间，第五金属层位于第四金属层和衬底膜层之间，第一金属层的材质和第四金属层的材质相同，第二金属层的材质和第五金属层的材质相同。
本公开实施例还提供了一种显示装置，包括如上所述的显示基板。
显示装置可以是显示器、手机、平板电脑、电视机、可穿戴电子设备、导航显示设备等。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
上面结合附图对本公开的实施例进行了描述，但是本公开并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本公开的启示下，在不脱离本公开宗旨和权利要求所保护的范围情况下，还可做出很多形式，均属于本公开的保护之内。

Claims (27)

  1. 一种显示基板的制作方法，其中，所述显示基板包括衬底膜层和功能膜层；
    所述显示基板包括显示区域和开孔区域；
    所述方法包括：
    在衬底膜层上形成多层功能膜层；
    对所述开孔区域中的至少一层所述功能膜层进行刻蚀以形成贯穿所述至少一层功能膜层的第一过孔；
    形成覆盖所述显示区域和暴露所述第一过孔的过渡层；
    以所述过渡层为掩膜，形成所述开孔区域内的第二过孔，所述第二过孔贯穿所述衬底膜层和除所述至少一层功能膜层之外的其他所有所述功能膜层；
    去除所述过渡层。
  2. 根据权利要求1所述的方法，其中，所述形成覆盖所述显示区域和暴露所述第一过孔的过渡层的步骤，包括：
    沉积覆盖所述显示区域和所述开孔区域的过渡材料层；
    在所述过渡材料层上形成光刻胶，对光刻胶进行曝光，显影后形成覆盖所述显示区域和暴露所述第一过孔的第一光刻胶图形；
    以所述第一光刻胶图形为掩膜，对位于所述开孔区域内的过渡材料层进行刻蚀，形成覆盖所述显示区域和暴露所述第一过孔的过渡层；
    去除所述第一光刻胶图形。
  3. 根据权利要求1所述的方法，其中，所述过渡层包括金属层或金属氧化物层。
  4. 根据权利要求1所述的方法，其中，在所述衬底膜层上形成多层功能膜层的步骤，包括：
    在所述衬底膜层上形成阳极；
    所述形成覆盖所述显示区域和暴露所述第一过孔的过渡层的步骤，包括：
    形成覆盖所述显示区域和所述暴露所述第一过孔的过渡层，所述过渡层 覆盖所述阳极；
    所述去除所述过渡层的步骤，包括：
    利用第一刻蚀液刻蚀掉所述过渡层且保留所述阳极。
  5. 根据权利要求4所述的方法，其中，所述过渡层的材料包括铟镓锌氧化物(Indium Gallium Zinc Oxide，IGZO)，所述阳极的材料包括铟锡氧化物(Indium Tin Oxide，ITO)，所述第一刻蚀液为硫酸溶液。
  6. 根据权利要求1所述的方法，其中，在所述衬底膜层上形成多层功能膜层的步骤，包括：
    在所述衬底膜层上形成平坦材料层；
    在所述显示区域内形成覆盖部分所述平坦材料层的像素绝缘层；
    所述对所述开孔区域中的至少一层所述功能膜层进行刻蚀以形成贯穿所述至少一层功能膜层的第一过孔的步骤，包括：
    形成覆盖所述像素绝缘层和所述平坦材料层的光刻胶，对光刻胶进行曝光，显影后形成第二光刻胶图形，所述第二光刻胶图形暴露所述开孔区域；
    以所述第二光刻胶图形为掩膜，对所述平坦材料层进行刻蚀，以形成平坦层和贯穿所述平坦层的第三过孔；
    去除所述第二光刻胶图形。
  7. 根据权利要求6所述的方法，其中，所述显示基板还包括位于所述显示区域和所述开孔区域之间的过渡区域；
    在所述衬底膜层上形成平坦材料层的步骤之前，所述方法还包括：
    形成位于所述衬底膜层之上的金属图形，所述金属图形包括在垂直于所述衬底膜层的方向上依次层叠设置的第一金属层和第二金属层，所述第二金属层位于所述第一金属层和所述衬底膜层之间，所述第一金属层和第二金属层为不同金属材质；
    所述以所述第二光刻胶图形为掩膜，对所述平坦材料层进行刻蚀，形成平坦层的步骤，包括：
    以所述第二光刻胶图形为掩膜，对位于所述过渡区域内的所述平坦材料层进行刻蚀形成贯穿所述平坦层的环形过孔，以暴露所述过渡区域内的金属图形，所述环形过孔包围所述第三过孔设置且与所述第三过孔相互连通；
    利用第二刻蚀液对位于所述过渡区域内的金属图形进行湿法刻蚀，形成隔离柱，所述第二金属层在所述第二刻蚀液内的刻蚀速度大于所述第一金属层在所述第二刻蚀液内的刻蚀速度。
  8. 根据权利要求6所述的方法，其中，在形成覆盖所述显示区域和所述开孔区域的平坦材料层的步骤之前，所述方法还包括：
    在所述显示区域和所述开孔区域内形成至少一层功能膜层；
    在去除所述第二光刻胶图形的步骤之后，还包括：
    形成覆盖所述显示区域和所述开孔区域的光刻胶，对光刻胶进行曝光，显影后形成覆盖所述显示区域且暴露所述开孔区域的第三光刻胶图形；
    以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的至少一层功能膜层进行刻蚀，形成贯穿所述至少一层功能膜层的第四过孔，所述第四过孔与所述第三过孔相互贯通且均属于所述第一过孔；
    去除所述第三光刻胶图形。
  9. 根据权利要求8所述的方法，其中，所述至少一层功能膜层包括缓冲层、遮光层、有源层、栅极绝缘层、栅极图形、层间绝缘层、金属层和钝化层中的至少一层。
  10. 根据权利要求8所述的方法，其中，所述衬底膜层包括阻隔层；
    所述以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的至少一层功能膜层进行刻蚀，形成贯穿所述至少一层功能膜层的第四过孔的步骤，包括：
    以所述第三光刻胶图形为掩膜，对位于所述开孔区域内的至少一层功能膜层和部分所述阻隔层进行刻蚀，形成第四过孔。
  11. 根据权利要求6所述的方法，其中，在形成覆盖所述显示区域和所述开孔区域的平坦材料层的步骤之前，所述方法还包括：
    在所述显示区域和所述开孔区域内形成至少一层功能膜层，其中，形成目标功能膜层的步骤，包括：
    形成覆盖所述显示区域和所述开孔区域的材料层；
    在所述材料层上形成光刻胶，对光刻胶进行曝光，显影后形成第四光刻胶图形，所述第四光刻胶图形暴露所述开孔区域；
    以所述第四光刻胶图形为掩膜对所述材料层进行刻蚀，形成目标显示膜层，所述目标显示膜层暴露所述开孔区域，所述目标显示膜层为所述至少一层功能膜层中的任一功能膜层。
  12. 根据权利要求1所述的方法，其中，在所述去除所述过渡层的步骤之后，所述方法还包括：
    依次形成发光层和阴极；
    将所述显示基板从用于承载所述显示基板的承载基板上剥离。
  13. 根据权利要求1所述的方法，其中，所述显示基板还包括周边区域，所述开孔区域和所述显示区域被所述周边区域包围，在所述周边区域内设置有与所述显示区域内的显示器件相连接的走线。
  14. 根据权利要求1所述的方法，其中，所述第一过孔在所述衬底膜层所在平面上的正投影与所述第二过孔在所述衬底膜层所在平面上的正投影重叠。
  15. 一种显示基板，所述显示基板包括显示区域和开孔区域；所述显示基板包括衬底膜层和显示膜层，所述显示膜层包括多层功能膜层，其中，所述显示基板开设有第一过孔和第二过孔，所述第一过孔贯穿至少一层所述功能膜层，所述第二过孔贯穿所述衬底膜层和除所述至少一层功能膜层之外的其他所有功能膜层，所述第一过孔在所述衬底膜层所在平面上的正投影与所述第二过孔在所述衬底膜层所在平面上的正投影重叠。
  16. 根据权利要求15所述的显示基板，其中，所述第二过孔的第一开口尺寸大于所述第二过孔的第二开口尺寸，所述第二过孔的第一开口尺寸为所述第二过孔靠近所述显示膜层的一端的开口尺寸，所述第二过孔的第二开口尺寸为所述第二过孔远离所述显示膜层的一端的开口尺寸。
  17. 根据权利要求15所述的显示基板，其中，所述显示膜层包括平坦层，所述第一过孔包括贯穿所述平坦层的第三过孔。
  18. 根据权利要求17所述的显示基板，其中，所述显示膜层还包括位于所述平坦层和所述衬底膜层之间的其他功能膜层，所述第一过孔还包括第四过孔，所述第四过孔贯穿所述其他功能膜层中的至少一层功能膜层。
  19. 根据权利要求18所述的显示基板，其中，所述衬底膜层包括阻隔层； 所述第四过孔贯穿至少一层功能膜层和部分所述阻隔层。
  20. 根据权利要求19所述的显示基板，其中，所述第四过孔在垂直于所述衬底膜层方向上的深度大于所述阻隔层与所述平坦层之间的间隔距离。
  21. 根据权利要求17所述的显示基板，其中，所述显示基板还包括位于所述显示区域和所述开孔区域之间的过渡区域，所述平坦层还包括在所述过渡区域内贯穿所述平坦层的环形过孔，所述环形过孔包围所述第三过孔设置，且与第三过孔相互连通；所述环形过孔内设有隔离柱，所述隔离柱包括在垂直于所述衬底膜层的方向上依次层叠设置的第一金属层和第二金属层，所述第二金属层位于所述第一金属层和所述衬底膜层之间，所述第二金属层在衬底膜层上的正投影位于所述第一金属层在所述衬底膜层上的正投影内部。
  22. 根据权利要求21所述的显示基板，其中，所述过渡区域为环形区域或方框形区域。
  23. 根据权利要求21所述的显示基板，其中，所述显示膜层包括缓冲层、遮光层、有源层、栅极绝缘层、栅极图形、层间绝缘层、金属层和钝化层中的至少一层。
  24. 根据权利要求23所述的显示基板，其中，所述隔离柱与所述金属层位于同一层且材质相同。
  25. 根据权利要求15所述的显示基板，其中，所述显示膜层由所述多层功能膜层构成，所述第一过孔在所述衬底膜层所在平面上的正投影位于所述第二过孔在所述衬底膜层所在平面上的正投影的内部。
  26. 根据权利要求15所述的显示基板，其中，所述显示基板还包括周边区域，所述开孔区域和所述显示区域被所述周边区域包围，在所述周边区域内设置有与所述显示区域内的显示器件相连接的走线。
  27. 一种显示装置，包括如权利要求15-26中任一项所述的显示基板。
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