WO2021140897A1 - Procédé de fabrication de cellule solaire et cellule solaire - Google Patents

Procédé de fabrication de cellule solaire et cellule solaire Download PDF

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Publication number
WO2021140897A1
WO2021140897A1 PCT/JP2020/047682 JP2020047682W WO2021140897A1 WO 2021140897 A1 WO2021140897 A1 WO 2021140897A1 JP 2020047682 W JP2020047682 W JP 2020047682W WO 2021140897 A1 WO2021140897 A1 WO 2021140897A1
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Prior art keywords
electrode
raised
laminated
base electrode
insulating portion
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PCT/JP2020/047682
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English (en)
Japanese (ja)
Inventor
正典 兼松
訓太 吉河
小西　克典
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株式会社カネカ
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Priority to JP2021569815A priority Critical patent/JPWO2021140897A1/ja
Publication of WO2021140897A1 publication Critical patent/WO2021140897A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell manufacturing method and a solar cell.
  • a back contact type solar cell including a first wiring material and a second wiring material arranged so as to bridge between a plurality of second raised electrodes is known.
  • the base electrode and the raised electrode can be formed relatively easily by screen-printing a material such as silver paste. Further, an insulating material for preventing a short circuit between the base electrode and the wiring material can also be arranged by screen printing. In order to efficiently collect current from the semiconductor layer, it is desirable to increase the width of the base electrode.
  • the silver paste is relatively expensive, forming a wide base electrode with the silver paste has the disadvantage of increasing the cost of the solar cell. Therefore, it is an object of the present invention to provide a solar cell manufacturing method capable of manufacturing a highly efficient solar cell at a low cost and an inexpensive and highly efficient solar cell.
  • a first semiconductor layer and a second semiconductor layer extending in the first direction are alternately formed on the back surface of the semiconductor substrate in the second direction intersecting the first direction, respectively.
  • a first base electrode extending in the first direction is formed in a region laminated on the semiconductor layer, and a second base electrode extending in the first direction is formed in a region laminated on the second semiconductor layer of the transparent electrode.
  • the transparent electrode and the first base electrode are arranged so as to be included in the first semiconductor layer in a plan view, respectively, in the first direction and the second.
  • a plurality of first insulating portions arranged in a matrix in the direction are formed, and are arranged across the transparent electrode and the second base electrode so as to be included in the second semiconductor layer in a plan view, respectively, in the first direction.
  • the first base electrode is formed by forming a plurality of second insulating portions arranged in a matrix alternately arranged with the first insulating portion in the second direction and laminating the second conductive paste.
  • the transparent electrode is selectively removed by etching using the 1 base electrode, the second base electrode, the first insulating portion, the second insulating portion, the first raised electrode, and the second raised electrode as masks.
  • the step includes a step of connecting between the first raised electrodes and the second raised electrodes by the first wiring material and the second wiring material extending in the second direction, respectively.
  • the resin contained in the first base electrode, the second base electrode, the first insulating portion, and the second insulating portion is heated. May be further provided with a step of exuding.
  • the first conductive paste, the insulating paste, and the second conductive paste may be laminated by screen printing, respectively.
  • a solar cell has a plurality of first semiconductor layers alternately provided on a semiconductor substrate and the back surface of the semiconductor substrate in a second direction extending in the first direction and intersecting the first direction. And a plurality of second semiconductor layers, a plurality of first transparent electrodes laminated so as to extend in the first direction on each of the first semiconductor layers, and each of the second semiconductor layers so as to extend in the first direction.
  • a plurality of second base electrodes stacked so as to extend and a plurality of second base electrodes are arranged in a matrix at intervals in the first direction and the second direction so as to be laminated on a plurality of portions of the first base electrodes.
  • the first raised electrode and the first raised electrode are alternately spaced in the first direction and the second direction so as to be laminated on the plurality of first raised electrodes and a plurality of portions of the second base electrode.
  • the portion between the plurality of second raised electrodes arranged in a matrix and the first raised electrode of each of the first base electrodes is covered so as to be included in the first semiconductor layer in a plan view.
  • the first wiring material that electrically connects between the first raised electrodes, and the second raised electrode and the second raised electrode are arranged on the back surface side of the second insulating portion, and are electrically connected between the second raised electrodes.
  • a second wiring material to be connected to the object is provided.
  • the first insulating portion and the second insulating portion are separated from the first semiconductor layer and the second semiconductor layer, and the width of the first insulating portion in the second direction is
  • the width of the first transparent electrode may be larger than the width of the second direction
  • the width of the second insulating portion in the second direction may be larger than the width of the second transparent electrode in the second direction.
  • the width of the region where the first insulating portion of the first base electrode is laminated and the portion where the second insulating portion of the second base electrode is laminated is the width in the second direction.
  • the width of the region where the first raised electrode of the first base electrode is laminated and the portion of the second base electrode where the second raised electrode is laminated is smaller than the width in the second direction, and the first insulation is provided.
  • the width of the portion and the second insulating portion in the second direction is such that the region where the first raised electrode of the first base electrode is laminated and the second raised electrode of the second base electrode are laminated. It may be substantially equal to the width of the portion in the second direction.
  • the side surfaces of the first transparent electrode and the second transparent electrode may be at least partially covered with resin.
  • the present invention it is possible to provide a solar cell manufacturing method capable of manufacturing a highly efficient solar cell at low cost and an inexpensive and highly efficient solar cell.
  • FIG. 5 is a cross-sectional view taken along the line AA of the solar cell of FIG. It is a back view which shows the state which removed some components of the solar cell of FIG. It is a flowchart which shows the procedure of the solar cell manufacturing method which concerns on one Embodiment of this invention.
  • It is a schematic cross-sectional view which shows one process of the solar cell manufacturing method of FIG. It is a schematic cross-sectional view which shows the next process of FIG. 5 of the solar cell manufacturing method of FIG. It is a schematic cross-sectional view which shows the next process of FIG. 6 of the solar cell manufacturing method of FIG.
  • FIG. 1 is a schematic back view showing the configuration of the solar cell 1 according to the embodiment of the present invention.
  • FIG. 2 is a cross-sectional view taken along the line AA of the solar cell 1 of FIG.
  • the hatching in FIG. 1 is attached to make it easier to distinguish each component, and does not mean a cross section.
  • hatching, member codes, and the like may be omitted, but in such cases, other drawings shall be referred to. Further, the dimensions of the various members in the drawings are adjusted for convenience so that they can be easily seen.
  • the solar cell 1 is a so-called heterojunction back contact type solar cell.
  • the solar cell 1 includes a semiconductor substrate 11, a first semiconductor layer 21 and a second semiconductor layer 22 arranged on the back surface of the semiconductor substrate 11 (a surface opposite to the incident surface of light), a first semiconductor layer 21, and the like.
  • the first transparent electrode 31 and the second transparent electrode 32 arranged on the back surface side of the second semiconductor layer 22, and the first base arranged on the back surface side of the first transparent electrode 31 and the second transparent electrode 32, respectively.
  • the first covering portion 81 and the first covering portion 81 and the second covering material 71 and the second wiring material 72 connecting between the two raised electrodes 52, respectively, and the side surfaces of the first transparent electrode 31 and the second transparent electrode 32 are partially covered.
  • the two covering portions 82 are provided.
  • the semiconductor substrate 11 is formed of a crystalline silicon material such as single crystal silicon or polycrystalline silicon.
  • the semiconductor substrate 11 is, for example, an n-type semiconductor substrate in which a crystalline silicon material is doped with an n-type dopant. Examples of the n-type dopant include phosphorus (P).
  • the semiconductor substrate 11 functions as a photoelectric conversion substrate that absorbs incident light from the light receiving surface side to generate optical carriers (electrons and holes). By using crystalline silicon as the material of the semiconductor substrate 11, a relatively high output (stable output regardless of the illuminance) can be obtained even when the dark current is relatively small and the intensity of the incident light is low.
  • the first semiconductor layer 21 and the second semiconductor layer 22 have different conductive types from each other.
  • the first semiconductor layer 21 is formed of a p-type semiconductor
  • the second semiconductor layer 22 is formed of an n-type semiconductor.
  • the first semiconductor layer 21 and the second semiconductor layer 22 can be formed of, for example, an amorphous silicon material containing a dopant that imparts a desired conductive type.
  • Examples of the p-type dopant include boron (B), and examples of the n-type dopant include phosphorus (P) described above.
  • the first semiconductor layer 21 and the second semiconductor layer 22 are each formed in a band shape extending in the first direction.
  • the plurality of first semiconductor layers 21 and the plurality of second semiconductor layers 22 are alternately provided in the second direction intersecting the first direction.
  • the first semiconductor layer 21 and the second semiconductor layer 22 are preferably arranged so as to cover substantially the entire surface of the semiconductor substrate 11.
  • the first transparent electrode 31 is laminated on each of the first semiconductor layers 21 so as to extend in the first direction
  • the second transparent electrode 32 is laminated on each of the second semiconductor layers 22 so as to extend in the first direction.
  • the first transparent electrode 31 and the second transparent electrode 32 are thin layers that collect current from the first semiconductor layer 21 and the second semiconductor layer 22 and connect to the first base electrode 41 and the second base electrode 42.
  • the first transparent electrode 31 and the second transparent electrode 32 have adhesiveness caused by a difference in material between the first semiconductor layer 21 and the second semiconductor layer 22 and the first base electrode 41 and the second base electrode 42. It functions as an intermediate layer that prevents a decrease and an increase in electrical resistance at the interface.
  • the first transparent electrode 31 and the second transparent electrode 32 have a width smaller than that of the first semiconductor layer 21 and the second semiconductor layer 22 in the second direction so as not to come into contact with each other, and the first semiconductor layer 21 and the first semiconductor layer 21 in the first direction.
  • the two semiconductor layers 22 are laminated over substantially the entire length.
  • the width of the first transparent electrode 31 and the second transparent electrode 32 changes in the second direction corresponding to the first base electrode 41 and the second base electrode 42, which will be described later, and the first insulating portion 61 and the second insulating portion 62. ..
  • the first transparent electrode 31 and the second transparent electrode 32 can be formed of the same material.
  • the material forming the first transparent electrode 31 and the second transparent electrode 32 include ITO (Indium Tin Oxide) and zinc oxide (ZnO).
  • the first transparent electrode 31 and the second transparent electrode 32 are laminated in a wider area than the first base electrode 41 and the second base electrode 42, which will be described later, so that the first base electrode 41 and the second base electrode 42 are laminated.
  • the current collecting capacity can be improved.
  • the first base electrode 41 is laminated on each of the first transparent electrodes 31 so as to extend in the first direction
  • the second base electrode 42 is laminated on each of the second transparent electrodes 32 so as to extend in the first direction.
  • the first base electrode 41 and the second base electrode 42 collect electric power via the first transparent electrode 31 and the second transparent electrode 32.
  • FIG. 3 shows the solar cell 1 in a state where the first raised electrode 51, the second raised electrode 52, the first wiring material 71, and the second wiring material 72 are removed.
  • the width of the portion in which the first raised electrode 51 and the second raised electrode 52 of the first base electrode 41 and the second base electrode 42 are laminated is the portion between them, that is, the first. It is larger than the width in the second direction at the portion where the first insulating portion 61 and the second insulating portion 62 of the base electrode 41 and the second base electrode 42 are laminated.
  • the width of the first base electrode 41 and the second base electrode 42 in the second direction in the portion where the first raised electrode 51 and the second raised electrode 52 are laminated is the width of the first raised electrode 51 and the second raised electrode 42. 2
  • the height of the raised electrode 52 and a sufficient connection area between the first wiring material 71 and the second wiring material 72 are set so as to be secured.
  • the width in the second direction in the region where the first raised electrode 51 and the second raised electrode 52 of the first base electrode 41 and the second base electrode 42 are laminated is the first transparent electrode 31 or the second transparent electrode. It may be slightly larger than the width of 32 in the second direction. That is, the first base electrode 41 and the second base electrode 42 are connected to the first semiconductor layer 21 and the second semiconductor layer 22 at the ends in the second direction without passing through the first transparent electrode 31 and the second transparent electrode 32. It may have regions facing each other with a gap.
  • the width of the portion in which the portion 61 and the second insulating portion 62 are laminated in the second direction is preferably the minimum necessary size that can ensure conductivity. Considering the misalignment of each component, the width of the first base electrode 41 and the second base electrode 42 is set at both ends of the region covered by the first insulating portion 61 and the second insulating portion 62 in the first direction. It is more preferable that the size is reduced only in the region to be excluded.
  • the first base electrode 41 and the second base electrode 42 can be formed from a conductive paste containing conductive particles and a resin binder.
  • a conductive paste a silver paste can be typically mentioned.
  • the first base electrode 41 and the second base electrode 42 having a sufficient thickness so that the electric resistance can be reduced can be formed at a relatively low cost.
  • the first raised electrodes 51 are arranged in a matrix at intervals in the first direction and the second direction so as to be laminated on a plurality of portions of the respective first base electrodes 41, and the second raised electrodes 52 are arranged in a matrix.
  • the first raised electrode 51 and the first raised electrode 51 are arranged in a matrix at intervals so as to be laminated on a plurality of portions of each second base electrode 42 in the first direction and the second direction.
  • the first raised electrode 51 is interposed between the first base electrode 41 and the first wiring material 71 to separate the first wiring material 71 from the second base electrode 42.
  • the second raised electrode 52 is interposed between the second base electrode 42 and the second wiring material 72 to separate the second wiring material 72 from the first base electrode 41.
  • the first raised electrode 51 and the second raised electrode 52 can be formed from a conductive paste such as silver paste, in order to improve the adhesiveness with the first base electrode 41 and the second base electrode 42.
  • it is preferably formed of the same material as the first base electrode 41 and the second base electrode 42.
  • the heights of the first raised electrode 51 and the second raised electrode 52 are set to the first insulating portion 61 and the second insulating portion 62 so that reliable contact with the first wiring material 71 and the second wiring material 72 can be obtained. It is preferably sufficiently larger than the height of.
  • the width of the first raised electrode 51 and the second raised electrode 52 in the second direction is substantially equal to the width of the laminated region of the first base electrode 41 and the second base electrode 42 in order to increase the height efficiently. Is preferable.
  • the length of the first raised electrode 51 and the second raised electrode 52 in the first direction is such that the first raised electrode 51 and the second wiring material 72 are short-circuited and the second raised electrode 52 and the first wiring material 71 are short-circuited. In order to prevent a short circuit with the above, it is preferable that the distance between the first raised electrode 51 and the second raised electrode 52 is smaller than the distance in the first direction so as not to overlap when viewed from the second direction.
  • the first insulating portion 61 covers the portion between the first raised electrodes 51 of each of the first base electrodes 41, and the first transparent electrode 31 and the first base are included in the first semiconductor layer 21 in a plan view. It is laminated across the electrodes 41.
  • the second insulating portion 62 covers the portion between the second raised electrodes 52 of each of the second base electrodes 42, and the second transparent electrode 32 and the second base are included in the second semiconductor layer 22 in a plan view. It is laminated over the electrodes 42.
  • the first insulating portion 61 and the second insulating portion 62 may be laminated on the ends of the first raised electrode 51 and the second raised electrode 52 in the first direction.
  • the first insulating portion 61 and the second insulating portion 62 ensure the insulation between the first wiring material 71 and the second base electrode 42 and the insulation between the second wiring material 72 and the first base electrode 41. Further, since the first insulating portion 61 and the second insulating portion 62 particularly cover the portions of the first base electrode 41 and the second base electrode 42 having a small cross-sectional area to prevent contact with moisture or the like, the first insulating portion 61 and the second insulating portion 62 are first. The portion of the base electrode 41 and the second base electrode 42 having a small cross-sectional area is corroded and the conductivity is greatly impaired, and the first transparent electrode 31 and the second transparent electrode of the first base electrode 41 and the second base electrode 42 are greatly impaired. It is possible to prevent peeling from 32.
  • the width of the first insulating portion 61 and the second insulating portion 62 in the second direction is the portion where the first raised electrode 51 and the second raised electrode 52 of the first base electrode 41 and the second base electrode 42 are laminated. It is preferable that the width is substantially equal to the width in the second direction. As a result, the widths of the first transparent electrode 31 and the second transparent electrode 32 in the second direction can be made substantially constant, so that the widths of the first transparent electrode 31 and the second transparent electrode 32 in the second direction are increased. Therefore, the current collecting resistance can be made smaller.
  • the lengths of the first insulating portion 61 and the second insulating portion 62 in the first direction are such that the first raised electrode 51 and the second wiring material 72 are short-circuited and the second raised electrode 52 and the first wiring material 71 are short-circuited.
  • the length of the first raised electrode 51 and the second raised electrode 52 is larger than the length in the first direction.
  • the first insulating portion 61 and the second insulating portion 62 can be formed from a paste-like material having insulating properties.
  • a material for forming the first insulating portion 61 and the second insulating portion 62 for example, a thermosetting resin composition containing an epoxy resin or the like as a main component can be used.
  • the first wiring material 71 is arranged on the back surface side of the first raised electrode 51 and the first insulating portion 61, electrically connects between the first raised electrodes 51, and the second wiring material 72 is the second. It is arranged on the back surface side of the raised electrode 52 and the second insulating portion 62, and electrically connects the second raised electrode 52.
  • the first wiring material 71 and the second wiring material 72 can be formed of, for example, a conductor such as a copper wire.
  • the first wiring material 71 and the second wiring material 72 and the first raised electrode 51 and the second raised electrode 52 can be connected by, for example, solder, a conductive adhesive, or the like.
  • As the first wiring material 71 and the second wiring material 72 a metal wire coated with solder for connecting the outer surface to the first raised electrode 51 and the second raised electrode 52 may be used.
  • the first covering portion 81 and the second covering portion 82 cover the end faces of the first transparent electrode 31 and the second transparent electrode 32 on both sides in the second direction.
  • the first coating portion 81 and the second coating portion 82 can be formed by exuding the resin components of the first base electrode 41 and the second base electrode 42, and the first insulating portion 61 and the second insulating portion 62. ..
  • the first transparent electrode 31 and the second transparent electrode 32 can be formed even when water has penetrated into the solar cell module formed by using the solar cell 1. It can be protected and the deterioration of the performance of the solar cell 1 can be suppressed.
  • the first base electrode 41, the second base electrode 42, the first raised electrode 51, and the second raised electrode 52 for collecting electricity are formed with a vacuum facility required. Since it can be formed by printing and firing a paste-like material without using technology, it can be manufactured at a relatively low cost.
  • the solar cell 1 includes a first transparent electrode 31 and a second transparent electrode 32 for extracting electric power from the first semiconductor layer 21 and the second semiconductor layer 22, so that the first base electrode 41 and the second base electrode 42 can be separated from each other. The width of the portion between the first raised electrode 51 and the second raised electrode 52 can be reduced. As a result, the amount of the relatively expensive conductive paste used is reduced, so that the solar cell 1 can be manufactured with high efficiency and at a relatively low cost.
  • the solar cell 1 can be manufactured by the solar cell manufacturing method shown in FIG.
  • the solar cell manufacturing method of FIG. 4 is an embodiment of the solar cell manufacturing method according to the present invention.
  • the solar cell manufacturing method of the present embodiment includes a step of forming the first semiconductor layer 21 and the second semiconductor layer 22 on the back surface of the semiconductor substrate 11 (step S01: semiconductor layer forming step), and the first semiconductor layer 21 and the second.
  • a step of laminating the transparent electrode 30 on the back surface side of the semiconductor substrate 11 so as to cover the semiconductor layer 22 step S02: transparent electrode laminating step
  • a step of forming the base electrode 42 step S03: base electrode forming step
  • a step of forming the first insulating portion 61 and the second insulating portion 62 by laminating the insulating paste step S04: insulating portion forming step).
  • step S05 raised electrode forming step
  • step S06 etching step
  • step S07 firing step
  • step S08 wiring material connecting step
  • the first semiconductor layer 21 and the second semiconductor layer 22 are formed so as to be alternately arranged in the second direction on the back surface of the semiconductor substrate 11.
  • the first semiconductor layer 21 and the second semiconductor layer 22 can be formed in order by forming a mask on the back surface of the semiconductor substrate 11 and laminating semiconductor materials by, for example, a film forming technique such as CVD. it can.
  • the entire back surface side of the semiconductor substrate 11 on which the first semiconductor layer 21 and the second semiconductor layer 22 are formed is covered with a film forming technique such as CVD or PVD. 1
  • a film forming technique such as CVD or PVD. 1
  • the materials forming the transparent electrode 31 and the second transparent electrode 32 are laminated.
  • the first base electrode 41 is formed in the region laminated on the first semiconductor layer 21 of the transparent electrode 30 by laminating the first conductive paste.
  • the second base electrode 42 is formed in the region laminated on the second semiconductor layer 22 of the transparent electrode 30.
  • the first conductive paste can be selectively laminated by screen printing.
  • the solvent contained in the first conductive paste may be volatilized, and the formed first base electrode 41 and the second base electrode 42 may be dried so as not to be easily deformed. preferable.
  • the drying conditions can be, for example, about 3 minutes at 150 ° C.
  • the first insulating portion 61 and the second insulating portion 62 are formed by laminating the insulating paste.
  • the first insulating portions 61 are arranged across the transparent electrode 30 and the first base electrode 41 so as to be included in the first semiconductor layer 21 in a plan view, and are arranged in a matrix in the first direction and the second direction, respectively. It is formed.
  • the second insulating portion 62 is arranged so as to be included in the second semiconductor layer 22 in a plan view so as to be included in the transparent electrode 30 and the second base electrode 42, respectively, and the second insulating portion 62 and the first insulating portion 61 in the first direction and the second direction.
  • the insulating paste can be selectively laminated by screen printing. Further, also in the insulating portion forming step, it is preferable to volatilize the solvent contained in the insulating paste and perform drying so that the formed first insulating portion 61 and the second insulating portion 62 are not easily deformed.
  • the drying conditions can be, for example, about 3 minutes at 150 ° C.
  • the first raised electrode is formed in a region where the first insulating portion 61 of the first base electrode 41 is not laminated.
  • the 51 is formed, and the second raised electrode 52 is formed in a region where the second insulating portion 62 of the second base electrode 42 is not laminated.
  • the first raised electrode 51 and the second raised electrode 52 are arranged in a matrix arranged in the first direction and the second direction, respectively, and are formed so as to be alternately arranged in the first direction and the second direction.
  • the second conductive paste can also be selectively laminated by screen printing.
  • the solvent contained in the second conductive paste is volatilized, and the formed first raised electrode 51 and the second raised electrode 52 are dried so as not to be easily deformed. It is preferable to do so.
  • the drying conditions can also be, for example, about 3 minutes at 150 ° C.
  • the first semiconductor layer 21 is included in the first semiconductor layer 21 in a plan view by selectively removing the region of the transparent electrode 30 straddling the first semiconductor layer 21 and the second semiconductor layer 22 by etching with the 52 as a mask.
  • the transparent electrode 31 and the second transparent electrode 32 included in the second semiconductor layer 22 are separated from each other in a plan view.
  • an etching solution capable of etching the transparent electrode 30 formed from ITO for example, hydrochloric acid or the like can be used.
  • the widths of the first transparent electrode 31 and the second transparent electrode 32 separated by the side etch effect in the second direction are the first base electrode 41, the second base electrode 42, and the second base electrode 42, which are masked in a plan view. It is slightly smaller than the width of the envelope shape of the 1 insulating portion 61, the 2nd insulating portion 62, the 1st raised electrode 51, and the 2nd raised electrode 52 in the second direction. Therefore, the position shift occurs for some reason, and the first insulating portion 61 or the second insulating portion 62 causes the first base electrode 41, the second base electrode 42, the first raised electrode 51, and the second raised electrode 52. Even when the portion is in contact with the portion adjacent to the second direction, the transparent electrode 30 immediately below the contact portion can be removed to separate the first transparent electrode 31 and the second transparent electrode 32.
  • the first base electrode 41, the second base electrode 42, the first insulating portion 61, the second insulating portion 62, the first raised electrode 51, and the second raised electrode 52 are cured by heating. .. Further, in the firing step, the first base electrode 41, the second base electrode 42, the first insulating portion 61, the second insulating portion 62, the first raised electrode 51, and the second raised electrode 52 are formed by heating.
  • the resin components of the conductive paste, the insulating paste, and the second conductive paste of No. 1 are exuded, and as shown in FIG. 11, the end faces of the first transparent electrode 31 and the second transparent electrode 32 on both sides in the second direction.
  • the first coating portion 81 and the second coating portion 82 that cover a part or all of the above can be formed.
  • the firing conditions can be, for example, 180 ° C. for about 60 minutes.
  • step S08 In the wiring material connecting step of step S08, between the first raised electrode 51 and the second raised electrode 52 arranged in the second direction by the first wiring material 71 and the second wiring material 72 extending in the second direction, respectively. Connecting. As a result, the solar cell 1 as shown in FIG. 2 can be obtained.
  • the transparent electrode 30 is formed on the front surface in the transparent electrode laminating step, and the first base electrode 41, the second base electrode 42, the first insulating portion 61, and the second insulating portion are formed in the transparent electrode selective removal step. Since etching is performed using 62, the first raised electrode 51 and the second raised electrode 52 as masks, it is not necessary to form a dedicated mask for forming the first transparent electrode 31 and the second transparent electrode 32. A highly efficient solar cell 1 can be manufactured at a relatively low cost.
  • the solar cell according to the present invention has additional components such as an intrinsic semiconductor layer that insulates between each component, an antireflection film that suppresses light reflection, and a resin film that protects electrodes and the like, in addition to the above-mentioned components. May be provided.
  • the covering portion may not be provided. That is, the first conductive paste forming the first base electrode and the second base electrode, the insulating paste forming the first insulating portion and the second insulating portion, and the first raised electrode and the second raised electrode are formed.
  • the second conductive paste one in which the resin component does not easily exude during firing may be used.
  • firing may be performed before the etching step.
  • the covering portion since the covering portion is not formed, it is preferable to use as the first conductive paste, the insulating paste and the second conductive paste, which are hard to exude the resin component at the time of firing.
  • the order of the insulating portion forming step and the raised electrode forming step may be changed.

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Abstract

La présente invention concerne un procédé de fabrication de cellule solaire qui permet de fabriquer une cellule solaire à haut rendement à faible coût. Le procédé de fabrication de cellule solaire selon un aspect de la présente invention comprend les étapes consistant à : former une première couche semi-conductrice et une seconde couche semi-conductrice sur la surface arrière d'un substrat semi-conducteur ; stratifier une électrode transparente sur le côté de surface arrière du substrat semi-conducteur pour recouvrir la première couche semi-conductrice et la seconde couche semi-conductrice ; former une première électrode de base et une seconde électrode de base par stratification d'une première pâte conductrice ; former une première partie isolante et une seconde partie isolante agencées sous forme de matrice par stratification d'une pâte isolante ; former une première électrode haute et une seconde électrode haute par stratification d'une seconde pâte conductrice ; éliminer sélectivement l'électrode transparente par gravure à l'aide de la première électrode de base, la seconde électrode de base, la première partie isolante, la seconde partie isolante, la première électrode haute et la seconde électrode haute utilisées en tant que masques ; et connecter la première électrode haute et la seconde électrode haute par l'intermédiaire d'un premier matériau de câblage et d'un second matériau de câblage.
PCT/JP2020/047682 2020-01-08 2020-12-21 Procédé de fabrication de cellule solaire et cellule solaire WO2021140897A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016158977A1 (fr) * 2015-03-31 2016-10-06 株式会社カネカ Batterie solaire et module de batterie solaire
JP2017055117A (ja) * 2015-09-09 2017-03-16 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール及びその製造方法
JP2017055113A (ja) * 2015-09-08 2017-03-16 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール及びその製造方法
WO2018037672A1 (fr) * 2016-08-22 2018-03-01 株式会社カネカ Cellule solaire et module de cellule solaire

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016158977A1 (fr) * 2015-03-31 2016-10-06 株式会社カネカ Batterie solaire et module de batterie solaire
JP2017055113A (ja) * 2015-09-08 2017-03-16 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール及びその製造方法
JP2017055117A (ja) * 2015-09-09 2017-03-16 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール及びその製造方法
WO2018037672A1 (fr) * 2016-08-22 2018-03-01 株式会社カネカ Cellule solaire et module de cellule solaire

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