WO2021138929A1 - 一种显示面板及其制备方法 - Google Patents

一种显示面板及其制备方法 Download PDF

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WO2021138929A1
WO2021138929A1 PCT/CN2020/072392 CN2020072392W WO2021138929A1 WO 2021138929 A1 WO2021138929 A1 WO 2021138929A1 CN 2020072392 W CN2020072392 W CN 2020072392W WO 2021138929 A1 WO2021138929 A1 WO 2021138929A1
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light
layer
substrate
emitting
electrode
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PCT/CN2020/072392
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English (en)
French (fr)
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刘世奇
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/753,840 priority Critical patent/US11943949B2/en
Publication of WO2021138929A1 publication Critical patent/WO2021138929A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H10K59/1275—Electrical connections of the two substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the invention relates to the field of display, in particular to a display panel and a preparation method thereof.
  • AMOLED (English: Active-matrix organic light-emitting diode, Chinese translation: active matrix organic light-emitting diode or active matrix organic light-emitting diode) is a display technology.
  • OLED organic light emitting diode
  • AM active matrix or active matrix refers to the pixel addressing technology behind it.
  • AMOLED displays gradually occupy the high-end display market due to their color gamut and contrast advantages, but there is still a lot of room for improvement.
  • OLEDs are prepared by evaporation.
  • printed OLED preparations have gradually emerged. They have the advantage of high material utilization and become the main development direction of AMOLED displays in the future.
  • the present invention provides a display panel and a manufacturing method thereof to solve the technical problem in the prior art that the flatness of the anode is affected by too many wires on the array substrate.
  • the present invention provides a display panel, including a light-emitting area and a non-light-emitting area surrounding the light-emitting area, and a first substrate with a first lead wire on one side; a second substrate , The cover is connected to the side of the first substrate with the first lead wires; the second substrate includes a cover plate; the first electrode is arranged on the side of the cover plate facing the first substrate, from the The non-light-emitting area extends to the light-emitting area; a retaining wall structure is provided on the first electrode, the retaining wall structure has a plurality of openings and a retaining wall structure surrounding the openings, and the retaining wall structure is provided at all In the non-light-emitting area, the light-emitting layer includes a plurality of light-emitting units, and any one of the light-emitting units is correspondingly disposed in the opening of the barrier structure; a second electrode extends from the non-light-emitting
  • the second electrode extends from the surface of the corresponding light-emitting unit to the retaining wall structure of the non-light-emitting area, and the second electrode and the second electrode provided on the retaining wall structure
  • the second lead wire has a gap.
  • first connecting wire corresponds to the second connecting wire provided in the non-light emitting area.
  • the first substrate further includes a base substrate; a light-shielding metal layer, which is provided in the non-light-emitting area on the base substrate; a buffer layer, which is provided on the second substrate and covers the light-shielding metal layer
  • the active layer is arranged on the buffer layer; the first insulating layer is arranged on the active layer, wherein the orthographic projection of the first insulating layer on the base substrate completely falls into the active layer
  • the layer is in the orthographic projection of the base substrate; the first metal layer is arranged on the first insulating layer; the second insulating layer is arranged on the buffer layer and covers the active layer and the first insulating layer.
  • the active layer includes a first active layer, which is provided in the non-light-emitting area and corresponds to the light-shielding metal layer; a second active layer, which is provided in the light-emitting area; and a second metal layer is provided On the second insulating layer, the second metal layer includes a first metal segment, which is provided in the non-light emitting region and corresponds to the first active layer, wherein the first metal segment includes at least two One pin penetrates the second insulating layer and is connected to the first active layer, and the other pin penetrates the second insulating layer and the buffer layer and is connected to the light-shielding metal layer.
  • it further includes a third insulating layer disposed on the second insulating layer and covering the second metal layer, and the second insulating layer has an opening corresponding to the first metal segment;
  • a lead wire is arranged on the inner wall of the opening and covers the area where the first metal segment is exposed in the opening.
  • the material of the first lead wire includes at least one of indium zinc oxide, indium tin oxide, aluminum, and silver.
  • the present invention also provides a method for manufacturing a display panel.
  • the display panel includes a light-emitting area and a non-light-emitting area surrounding the light-emitting area, including preparing a first substrate and a second substrate.
  • the preparation steps of the second substrate are as follows : Providing a cover plate; preparing a first electrode on the cover plate; preparing a retaining wall structure in the non-luminous area on the first electrode, and opening a through hole in the retaining wall structure corresponding to the light-emitting area;
  • a light-emitting layer is prepared in the through hole in the barrier structure, wherein the light-emitting layer includes light-emitting units of at least two colors, and adjacent light-emitting units have different colors; and a second electrode is prepared on the light-emitting unit ,
  • the second electrode extends from the surface of the corresponding light-emitting unit to the adjacent barrier wall; a via hole is opened on the barrier wall structure in the non-light-emitting area
  • the second electrode of the non-light-emitting area has a gap; the conductive material is filled in the via hole to form a second lead wire; an encapsulation layer is prepared on the first electrode, wherein the encapsulation layer covers the The barrier wall structure, the light-emitting layer and the second electrode, and the second connecting wire is partially exposed outside the encapsulation layer; a second connecting wire is prepared on the first substrate corresponding to the second connecting wire.
  • a lead wire; the first substrate and the second substrate are combined, wherein the second lead wire is connected to the corresponding first lead wire.
  • the specific preparation steps of the second substrate are as follows: provide a base substrate; prepare a layer of light-shielding metal material on the base substrate, and pattern the light-shielding metal layer; prepare a buffer layer on the second substrate The buffer layer covers the light-shielding metal layer; a layer of IGZO material is prepared on the buffer layer and patterned to form an active layer, wherein the active layer includes a first active layer corresponding to the light-shielding metal layer.
  • a first insulating layer is prepared on the active layer, and a first metal layer is prepared on the first insulating layer; and a first metal layer is prepared on the buffer layer A second insulating layer, wherein the second insulating layer covers the active layer, the first insulating layer and the first metal layer; a second metal layer is prepared on the second insulating layer, wherein ,
  • the second metal layer provided in the non-light-emitting area is respectively connected to the first active layer and the light-shielding metal layer through via holes; the second metal layer provided in the light-emitting area passes through The via hole is connected to the second active layer.
  • the preparation step of the second substrate further includes preparing a third insulating layer on the second insulating layer, wherein the third insulating layer covers the second metal layer, and the third insulating layer is An opening is opened on the insulating layer, and the opening corresponds to the second metal layer in the non-light-emitting area; a layer of conductive material is prepared in the opening, and the first connection is formed after patterning. line.
  • Fig. 1 is a schematic diagram of a first substrate in an embodiment.
  • Fig. 2 is a schematic diagram of a second substrate in an embodiment.
  • Fig. 3 is a schematic diagram of a display panel in an embodiment.
  • the display panel 10 of the present invention includes a light-emitting area 101 and a non-light-emitting area 102 surrounding the light-emitting area 101.
  • the display panel 10 further includes a first substrate 110 and a second substrate 120 arranged opposite to each other.
  • the first substrate 110 is an array substrate, including a base substrate 111, a light-shielding metal layer 112, a buffer layer 113, an active layer 114, a first insulating layer 115, a first metal layer 116, and a second The insulating layer 117, the second metal layer 118, and the third insulating layer 119.
  • the base substrate 111 is a glass substrate, and the glass is transparent glass. It has a certain load-bearing capacity and can carry various functional layers on the array substrate. At the same time, it can effectively block the intrusion of external water vapor into the array substrate and cause the loss of the function of the array substrate. Thus, the service life of the display panel 10 is affected.
  • the light-shielding metal layer 112 is provided on the base substrate 111. Specifically, the light-shielding metal layer 112 is provided in the non-light-emitting area 102 for reflecting light directed toward the base substrate 111, Prevent light leakage on the side of the base substrate 111 of the first substrate 110, causing display abnormalities.
  • the buffer layer 113 is disposed on the base substrate 111 and covers the light-shielding metal layer 112.
  • the buffer layer 113 is made of polyimide (PI) or other buffer material, which plays a role of buffer protection, and at the same time The short-circuit phenomenon of the light-shielding metal layer 112 is also avoided.
  • the active layer 114 is disposed on the buffer layer 113.
  • the active layer 114 includes a first active layer 1141 and a second active layer 1142, wherein the first active layer 1141 corresponds to The position of the light-shielding metal layer 112, in order for the light-shielding metal layer 112 to achieve the best light-shielding effect, generally speaking, the area of the light-shielding metal layer 112 is larger than the area of the first active layer 1141, that is, The projection of the first active layer 1141 on the base substrate 111 completely falls within the projection of the light shielding metal layer 112 on the base substrate 111.
  • the second active layer 1142 is disposed in the light-emitting area 101 and is used to provide electrical signals required for the display panel 10 to emit light.
  • the first insulating layer 115 is disposed on the active layer 114. Specifically, the first insulating layer 115 is disposed on the first active layer 1141 and the second active layer 1142, and the The orthographic projection of the first insulating layer 115 completely falls into the area of the first active layer 1141 and the second active layer 1142.
  • the first metal layer 116 is disposed on the first insulating layer 115, and the first insulating layer 115 is used to prevent the first metal layer 116 and the active layer 114 from directly contacting and causing a short circuit.
  • the second insulating layer 117 is disposed on the buffer layer 113 and covers the active layer 114, the first insulating layer 115, and the first metal layer 116 to prevent the intrusion of external water vapor and improve the first The service life of the substrate 110.
  • the second metal layer 118 is provided on the second insulating layer 117.
  • the second metal layer includes a first metal segment 1181 and a second metal segment 1182.
  • the first metal segment 1181 is correspondingly provided on the On the first active layer 1141 in the non-light-emitting area 102, the first metal segment 1181 includes at least two pins, and the pins penetrate the second insulating layer 117 and are connected to the first active layer 1141.
  • the source layer 1141 forms a source-drain electrode loop.
  • the second metal segment 1182 is correspondingly disposed on the second active layer 1142 in the light-emitting area 101, and the second metal segment 1182 includes at least two pins, one of which penetrates the second insulating layer 117 It is connected to the second active layer 1142, and another pin penetrates the second insulating layer 117 and the buffer layer 113 to connect to the corresponding light-shielding metal layer 112.
  • the third insulating layer 119 is disposed on the second insulating layer 117 and covers the second metal layer 118 to prevent external water vapor from invading and causing the second metal layer 118 to fail due to water vapor corrosion. At the same time, the third insulating layer 119 Covering the second metal layer 118 also prevents short circuits caused by the contact between the second metal layer 118 and other metal layers.
  • the third insulating layer 119 defines an opening 1191 corresponding to the second metal layer 118.
  • the second metal layer 118 is partially exposed to the opening 1191, and a first connection is provided in the opening 1191.
  • the lead wire 130 wherein the first lead wire 130 is disposed on the inner wall of the opening 1191 and is connected to the exposed second metal layer 118.
  • the second substrate 120 includes a cover 121, a first electrode 122, a light-emitting layer 123, a barrier structure 124, a second electrode 125, a second lead wire 126 and an encapsulation layer 127.
  • the cover 121 is a glass substrate, and the glass is transparent glass. It has a certain bearing capacity and can carry various functional layers on the array substrate. At the same time, it can effectively block the intrusion of external water vapor into the display panel 10, thereby affecting the display panel. 10 life span.
  • the first electrode 122 is an anode, and the first electrode 122 is directly prepared on the cover plate 121. Since the cover plate 121 is a flat and smooth plate structure, the anode can have a relatively high integrity. It improves the uniformity of the film thickness, thereby improving the luminous efficiency and service life of the display panel 10.
  • the retaining wall structure 124 is disposed on the first electrode 122 and corresponds to the non-luminous area 102.
  • the retaining wall structure 124 includes a plurality of retaining wall units, and the gaps enclosed by the adjacent retaining wall units That is the light-emitting area 101, the light-emitting layer 123 is set in the gap, the light-emitting layer 123 includes a number of light-emitting units, the colors of the light-emitting units include red, blue, and green, and each light-emitting unit corresponds to It is arranged in the gap enclosed by the wall unit, and the adjacent light-emitting units have different colors, so as to ensure that the display panel 10 can display colorful images.
  • the second electrode 125 is a cathode, which is arranged on the light-emitting layer 123 and extends to the adjacent wall unit.
  • the first electrode 122 and the second electrode 125 have a voltage difference, so that the light-emitting layer 123 can emit light, and the display panel 10 can display images normally.
  • the second lead wire 126 is disposed on the first electrode 122 and corresponds to the non-light-emitting area 102.
  • the second lead wire 126 is a truncated cone body or a prismatic cone body, one end of which is
  • the first electrode 122 penetrates the retaining wall structure 124, in order to prevent the second electrode 125 provided on the retaining wall structure 124 and the first electrode 122 from being connected through the second lead wire 126, resulting in In a short-circuit phenomenon, a gap is provided between the second electrode 125 and the second connecting wire 126 on the surface of the retaining wall structure 124.
  • the encapsulation layer 127 is disposed on the first electrode 122 and covers the barrier structure 124, the light-emitting layer 123, and the second electrode 125 to prevent the second electrode 125 and the first electrode 122 Corroded by external water vapor, affecting the service life.
  • the encapsulation layer 127 partially covers the second connection trace 126 to facilitate subsequent connection of the second connection trace 126 to the first connection trace 130.
  • the first substrate 110 and the second substrate 120 are assembled oppositely to form the display panel 10, and the first connection trace 130 is correspondingly connected to the second connection trace 126 That is, the second metal layer is connected to the first electrode 122 through the first connection trace 130 and the second connection trace 126.
  • this embodiment also provides a method for preparing the display panel, including preparing a first substrate and a second substrate, and the specific steps are as follows:
  • the preparation steps of the second substrate are as follows:
  • Preparing a light-emitting layer in the through hole in the retaining wall structure Preparing a light-emitting layer in the through hole in the retaining wall structure, wherein the light-emitting layer includes light-emitting units of at least two colors, and adjacent light-emitting units have different colors;
  • An encapsulation layer is prepared on the first electrode, wherein the encapsulation layer covers the barrier structure, the light-emitting layer and the second electrode, and the second lead wire is partially exposed outside the encapsulation layer .
  • a layer of IGZO material is prepared on the buffer layer and patterned to form an active layer, wherein the active layer includes a first active layer corresponding to the light-shielding metal layer and a second active layer arranged in the light-emitting area.
  • Active layer includes a first active layer corresponding to the light-shielding metal layer and a second active layer arranged in the light-emitting area.
  • a second metal layer is prepared on the second insulating layer, wherein the second metal layer provided in the non-light emitting region is connected to the first active layer and the light-shielding metal layer through via holes, respectively ;
  • the second metal layer provided in the light-emitting area is connected to the second active layer through a via hole.
  • the first substrate and the second substrate are combined, wherein the second connecting wire is connected to the corresponding first connecting wire.

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Abstract

公开了一种显示面板及其制备方法，显示面板包括第一基板，具有第一接引走线；第二基板包括盖板；第一电极，设于盖板朝向第一基板的一面，从非发光区延伸至发光区；第二接引走线，设于第一电极上。有益效果在于本发明的显示面板及其制备方法使阵列基板上的第二金属层和盖板上的阳极连接，提高显示面板的发光效率和使用寿命。

Description

一种显示面板及其制备方法 技术领域
本发明涉及显示领域，特别涉及一种显示面板及其制备方法。
背景技术
AMOLED(英语：Active-matrix organic light-emitting diode，中译：有源矩阵有机发光二极体或主动矩阵有机发光二极体)是一种显示屏技术。其中OLED(有机发光二极体)是描述薄膜显示技术的具体类型：有机电激发光显示；AM(有源矩阵体或称主动式矩阵体)是指背后的像素寻址技术。
随着人们对面板显示质量的高要求，AMOLED显示逐渐由于其色域及对比度优势占据了高端显示市场，但其仍存在着较大的改进空间。目前多数的OLED制备采用蒸镀的方式，近些年打印形式的OLED制备，已经逐渐显露头角，其具备着高材料利用率的优势，成为未来AMOLED显示的主要发展方向。
发明内容
为了解决上述技术问题，本发明提供了一种显示面板及其制备方法用以解决现有技术中由于阵列基板上走线过多从而影响阳极的平整的技术问题。
解决上述技术问题的技术方案是：本发明提供了一种显示面板，包括发光区和围绕所述发光区的非发光区，以及第一基板，其一面具有第一接引走线；第二基板，盖接于所述第一基板具有第一接引走线的一面；所述第二基板包括盖板；第一电极，设于所述盖板朝向所述第一基板的一面，从所述非发光区延伸至所述发光区；挡墙结构，设于所述第一电极上，所述挡墙结构中具有若干开口和围绕所述开口的挡墙结构，所述挡墙结构设于所述非发光区中，发光层，包括若干发光单元，任一所述发光单元对应设于所述挡墙结构的所述开口内；第二电极，从所述非发光区延伸至所述发光层远离所述盖板的一面；封装层，设于所述第一电极上且覆盖所述挡墙结构、所述发光层和所述第二电极；第二接引走线，设于所述非发光区的所述第一电极上，其中，所述第二接引走线贯穿所述挡墙结构和所述封装层。
进一步的，所述第二电极从对应的所述发光单元的表面延伸至所述非发光区的所述挡墙结构上，且设于所述挡墙结构上的所述第二电极与所述第二接引走线具有一间隙。
进一步的，所述第一接引走线与设于所述非发光区中的所述第二接引走线相对应。
进一步的，所述第一基板还包括衬底基板；遮光金属层，设于所述衬底基板上的非发光区中；缓冲层，设于所述第二基板上且覆盖所述遮光金属层；有源层，设于所述缓冲层上；第一绝缘层，设于所述有源层上，其中所述第一绝缘层在所述衬底基板的正投影完全落入所述有源层在所述衬底基板的正投影内；第一金属层，设于所述第一绝缘层上；第二绝缘层，设于所述缓冲层上且覆盖所述有源层、所述第一绝缘层和所述第一金属层。
进一步的，所述有源层包括第一有源层，设于所述非发光区中且对应所述遮光金属层；第二有源层，设于所述发光区中；第二金属层设于所述第二绝缘层上，所述第二金属层包括第一金属段，设于所述非发光区中且对应所述第一有源层，其中，所述第一金属段包括至少两个引脚，其中一引脚贯穿所述第二绝缘层与所述第一有源层相连，另一引脚贯穿所述第二绝缘层和所述缓冲层与所述遮光金属层连接。
进一步的，还包括第三绝缘层，设于所述第二绝缘层上且覆盖所述第二金属层，所述第二绝缘层对应所述第一金属段处开设有一开孔；所述第一接引走线设于所述开孔内壁且覆盖所述第一金属段裸露于所述开孔的区域。
进一步的，所述第一接引走线的材料包括铟锌氧化物、氧化铟锡、铝、银中的至少一种。
本发明还提供了一种显示面板的制备方法，所述显示面板包括发光区和围绕所述发光区的非发光区，包括制备第一基板和第二基板，所述第二基板的制备步骤如下：提供盖板；在所述盖板上制备第一电极；在所述第一电极上的非发光区中制备挡墙结构，在挡墙结构对应所述发光区位置开设通孔；在所述挡墙结构中的所述通孔内制备发光层，其中，所述发光层包括至少两种颜色的发光单元，且相邻所述发光单元的颜色不同；在所述发光单元上制备第二电极，所述 第二电极从对应的所述发光单元的表面延伸至相邻的所述挡墙上；在所述非发光区中的所述挡墙结构上开设过孔，所述过孔与所述非发光区的所述第二电极具有一间隙；在所述过孔内填充导电材料形成第二接引走线；在所述第一电极上制备封装层，其中所述封装层覆盖所述挡墙结构、所述发光层和所述第二电极，所述第二接引走线部分裸露于所述封装层外；在所述第一基板对应所述第二接引走线处制备第一接引走线；将所述第一基板与所述第二基板结合，其中所述第二接引走线和对应的所述第一接引走线连接。
进一步的，所述第二基板的具体制备步骤如下：提供衬底基板；在所述衬底基板上制备一层遮光金属材料，图案化形成遮光金属层；在所述第二基板上制备缓冲层，所述缓冲层覆盖所述遮光金属层；在所述缓冲层上制备一层IGZO材料，图案化后形成有源层，其中，有源层包括对应于所述遮光金属层的第一有源层和设于所述发光区中的第二有源层；在所述有源层上制备第一绝缘层，在所述第一绝缘层上制备第一金属层；在所述缓冲层上制备一层第二绝缘层，其中所述第二绝缘层覆盖所述有源层、所述第一绝缘层和所述第一金属层；在所述第二绝缘层上制备第二金属层，其中，设于所述非发光区中的所述第二金属层通过过孔分别与所述第一有源层和所述遮光金属层连接；设于所述发光区的所述第二金属层通过过孔与所述第二有源层连接。
进一步的，所述第二基板的制备步骤还包括在所述第二绝缘层上制备一层第三绝缘层，其中，所述第三绝缘层覆盖所述第二金属层，在所述第三绝缘层上开设一开孔，所述开孔对应所述非发光区中的所述第二金属层；在所述开孔内制备一层导电材料，图案化后形成所述第一接引走线。
发明概述
技术问题
问题的解决方案
发明的有益效果
对附图的简要说明
附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1是实施例中的第一基板示意图。
图2是实施例中的第二基板示意图。
图3是实施例中的显示面板示意图。
图中
10显示面板；                101发光区；
102非发光区；               110第一基板；
120第二基板；               111衬底基板；
112遮光金属层；             113缓冲层；
114有源层；                 115第一绝缘层；
116第一金属层；             117第二绝缘层；
118第二金属层；             1181第一金属段；
1182第二金属段；            119第三绝缘层；
1141第一有源层；            1142第二有源层；
1191开孔；                  130接引走线；
121盖板；                   122第一电极；
123发光层；                 124挡墙结构；
125第二电极；               126第二接引走线；
127封装层；
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重 复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
实施例1
本实施例中，本发明的显示面板10包括发光区101和围绕所述发光区101的非发光区102。
所述显示面板10还包括相对设置的第一基板110和第二基板120。
如图1所示，所述第一基板110为阵列基板，包括衬底基板111、遮光金属层112、缓冲层113、有源层114、第一绝缘层115、第一金属层116、第二绝缘层117、第二金属层118和第三绝缘层119。
所述衬底基板111为玻璃基板，玻璃为透明玻璃，具有一定的承载能力，能够承载所述阵列基板上的各个功能层，同时也能有效阻挡外界水汽侵入阵列基板，造成阵列基板功能损失，从而影响所述显示面板10的使用寿命。
所述遮光金属层112设于所述衬底基板111上，具体的，所述遮光金属层112设于所述非发光区102中，用于反射射向所述衬底基板111方向的光线，防止所述第一基板110的所述衬底基板111一侧漏光，造成显示异常。
所述缓冲层113设于所述衬底基板111上且覆盖所述遮光金属层112，所述缓冲层113的为聚酰亚胺(PI)或其他缓冲材质，起到缓冲保护的作用，同时也避免遮光金属层112发生短路现象。
所述有源层114设于所述缓冲层113上，具体的，所述有源层114包括第一有源层1141和第二有源层1142，其中，所述第一有源层1141对应所述遮光金属层112的位置，为了所述遮光金属层112能够达到最好的遮光效果，一般来说，所述遮光金属层112的面积大于所述第一有源层1141的面积，即所述第一有源层1141在所述衬底基板111上的投影完全落入所述遮光金属层112在所述衬底基板111上的投影内。所述第二有源层1142设于所述发光区101中，用于提供所述显示面板10发光所需的电信号。
所述第一绝缘层115设于所述有源层114，具体的，所述第一绝缘层115设于所 述第一有源层1141和所述第二有源层1142上，且所述第一绝缘层115的正投影完全落入所述第一有源层1141和所述第二有源层1142的区域中。
所述第一金属层116设于所述第一绝缘层115上，所述第一绝缘层115用以防止所述第一金属层116和所述有源层114直接接触从而发生短路的现象。
所述第二绝缘层117设于所述缓冲层113上且覆盖所述有源层114、所述第一绝缘层115和所述第一金属层116，防止外部水汽入侵，提高所述第一基板110的使用寿命。
所述第二金属层118设于所述第二绝缘层117上，具体的，所述第二金属层包括第一金属段1181和第二金属段1182，所述第一金属段1181对应设于所述非发光区102中的所述第一有源层1141上，所述第一金属段1181包括至少两引脚，所述引脚贯穿所述第二绝缘层117连接至所述第一有源层1141形成源漏电极回路。
所述第二金属段1182对应设于所述发光区101中的第二有源层1142上，所述第二金属段1182包括至少两引脚，其中一引脚贯穿所述第二绝缘层117与所述第二有源层1142连接，另一引脚贯穿所述第二绝缘层117和所述缓冲层113与所属遮光金属层112连接。
所述第三绝缘层119设于所述第二绝缘层117上且覆盖所述第二金属层118，防止外部水汽入侵造成所述第二金属层118由于水汽腐蚀失效，同时第三绝缘层119覆盖所述第二金属层118也起到了防止所述第二金属层118与其他金属层接触造成的短路现象。
所述第三绝缘层119对应所述第二金属层118处开设有一开孔1191，所述第二金属层118部分裸露于所述开孔1191，在所述开孔1191内设有第一接引走线130，其中，所述第一接引走线130设于所述开孔1191内壁且与裸露的所述第二金属层118连接。
如图2所示，所述第二基板120包括盖板121、第一电极122、发光层123、挡墙结构124、第二电极125、第二接引走线126和封装层127。
所述盖板121为玻璃基板，玻璃为透明玻璃，具有一定的承载能力，能够承载所述阵列基板上的各个功能层，同时也能有效阻挡外界水汽侵入显示面板10，从而影响所述显示面板10的使用寿命。
所述第一电极122为阳极，所述第一电极122直接制备在所述盖板121上，由于所述盖板本身121为一块平整光滑的板状结构，所述阳极可以具有较高的完整度，提升膜厚均一性，从而提高所述显示面板10的发光效率和使用寿命。
所述挡墙结构124设于所述第一电极122上且对应所述非发光区102，具体的，所述挡墙结构124包括若干挡墙单元，相邻所述挡墙单元围成的空隙即为所述发光区101，所述发光层123即设于所述空隙内，所述发光层123包括若干发光单元，所述发光单元的颜色包括红色、蓝色和绿色，每一发光单元对应设于挡墙单元围成的空隙内，且相邻所述发光单元的颜色不同，用以保障所述显示面板10可以显示彩色的画面。
所述第二电极125为阴极，设于所述发光层123上且延伸至相邻的挡墙单元上，所述第一电极122和所述第二电极125具有电压差，使所述发光层123能够发光，所述显示面板10能够正常显示画面。
所述第二接引走线126设于所述第一电极122上且对应所述非发光区102，具体的，所述第二接引走线126为圆台体或棱台体，其一端自所述第一电极122贯穿所述挡墙结构124，为了防止设于所述挡墙结构124上的第二电极125和所述第一电极122通过所述第二接引走线126连接，造成短路现象，在所述挡墙结构124表面，所述第二电极125和所述第二接引走线126之间设有一间隙。
所述封装层127设于所述第一电极122上且覆盖所述挡墙结构124、所述发光层123和所述第二电极125，防止所述第二电极125和所述第一电极122被外界水汽腐蚀，影响使用寿命。所述封装层127部分覆盖所述第二接引走线126，方便所述第二接引走线126后续与所述第一接引走线130连接。
如图3所示，所述第一基板110和所述第二基板120相对组立形成所述显示面板10，所述第一接引走线130与所述第二接引走线126对应连接，即所述第二金属层通过所述第一接引走线130和所述第二接引走线126与所述第一电极122连接。
为了更好的解释本发明，本实施例还提供了一种所述显示面板的制备方法，包括制备第一基板和第二基板，其具体步骤如下：
所述第二基板的制备步骤如下：
提供盖板；
在所述盖板上制备第一电极；
在所述第一电极上的非发光区中制备挡墙结构，在挡墙结构对应所述发光区位置开设通孔；
在所述挡墙结构中的所述通孔内制备发光层，其中，所述发光层包括至少两种颜色的发光单元，且相邻所述发光单元的颜色不同；
在所述发光单元上制备第二电极，所述第二电极从对应的所述发光单元的表面延伸至相邻的所述挡墙上；
在所述非发光区中的所述挡墙结构上开设过孔，所述过孔与所述非发光区的所述第二电极具有一间隙；
在所述过孔内填充导电材料形成第二接引走线；
在所述第一电极上制备封装层，其中所述封装层覆盖所述挡墙结构、所述发光层和所述第二电极，所述第二接引走线部分裸露于所述封装层外。
所述第一基板的具体制备步骤如下：
提供衬底基板；
在所述衬底基板上制备一层遮光金属材料，图案化形成遮光金属层；
在所述第二基板上制备缓冲层，所述缓冲层覆盖所述遮光金属层；
在所述缓冲层上制备一层IGZO材料，图案化后形成有源层，其中，有源层包括对应于所述遮光金属层的第一有源层和设于所述发光区中的第二有源层；
在所述有源层上制备第一绝缘层，在所述第一绝缘层上制备第一金属层；
在所述缓冲层上制备一层第二绝缘层，其中所述第二绝缘层覆盖所述有源层、所述第一绝缘层和所述第一金属层；
在所述第二绝缘层上制备第二金属层，其中，设于所述非发光区中的所述第二金属层通过过孔分别与所述第一有源层和所述遮光金属层连接；
设于所述发光区的所述第二金属层通过过孔与所述第二有源层连接。
将所述第一基板与所述第二基板结合，其中所述第二接引走线与对应的第一接引走线连接。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范 围之内。

Claims (10)

  1. 一种显示面板，其中，包括发光区和围绕所述发光区的非发光区，
    第一基板，其一面具有第一接引走线；以及
    第二基板，盖接于所述第一基板具有第一接引走线的一面；
    所述第二基板包括
    盖板；
    第一电极，设于所述盖板朝向所述第一基板的一面，从所述非发光区延伸至所述发光区；
    挡墙结构，设于所述第一电极上，所述挡墙结构中具有若干开口
    和围绕所述开口的挡墙结构，所述挡墙结构设于所述非发光区中，
    发光层，包括若干发光单元，任一所述发光单元对应设于所述挡墙结构的所述开口内；
    第二电极，从所述非发光区延伸至所述发光层远离所述盖板的一面；
    封装层，设于所述第一电极上且覆盖所述挡墙结构、所述发光层和所述第二电极；以及
    第二接引走线，设于所述非发光区的所述第一电极上，其中，所述第二接引走线贯穿所述挡墙结构和所述封装层。
  2. 根据权利要求1所述的显示面板，其中，所述第二电极从对应的所述发光单元的表面延伸至所述非发光区的所述挡墙结构上，且设于所述挡墙结构上的所述第二电极与所述第二接引走线具有一间隙。
  3. 根据权利要求2所述的显示面板，其中，所述第一基板还包括
    衬底基板；
    遮光金属层，设于所述衬底基板上的非发光区中；
    缓冲层，设于所述第二基板上且覆盖所述遮光金属层；
    有源层，设于所述缓冲层上；
    第一绝缘层，设于所述有源层上，其中所述第一绝缘层在所述衬底基板的正投影完全落入所述有源层在所述衬底基板的正投影内；
    第一金属层，设于所述第一绝缘层上；
    第二绝缘层，设于所述缓冲层上且覆盖所述有源层、所述第一绝缘层和所述第一金属层。
  4. 根据权利要求3所述的显示面板，其中，
    所述有源层包括
    第一有源层，设于所述非发光区中且对应所述遮光金属层；
    第二有源层，设于所述发光区中；
    第二金属层设于所述第二绝缘层上，所述第二金属层包括
    第一金属段，设于所述非发光区中且对应所述第一有源层，其中，所述第一金属段包括至少两个引脚，其中一引脚贯穿所述第二绝缘层与所述第一有源层相连，另一引脚贯穿所述第二绝缘层和所述缓冲层与所述遮光金属层连接。
  5. 根据权利要求4所述的显示面板，其中，还包括
    第三绝缘层，设于所述第二绝缘层上且覆盖所述第二金属层，所述第二绝缘层对应所述第一金属段处开设有一开孔；
    所述第一接引走线设于所述开孔内壁且覆盖所述第一金属段裸露于所述开孔的区域。
  6. 根据权利要求1所述的显示面板，其中，
    所述第一接引走线与设于所述非发光区中的所述第二接引走线相对应。
  7. 根据权利要求1所述的显示面板，其中，
    所述第一接引走线的材料包括铟锌氧化物、氧化铟锡、铝、银中的至少一种。
  8. 一种显示面板的制备方法，所述显示面板包括发光区和围绕所述 发光区的非发光区，其中，包括制备第一基板和第二基板，
    所述第二基板的制备步骤如下：
    提供盖板；
    在所述盖板上制备第一电极；
    在所述第一电极上的非发光区中制备挡墙结构，在挡墙结构对应所述发光区位置开设通孔；
    在所述挡墙结构中的所述通孔内制备发光层，其中，所述发光层包括至少两种颜色的发光单元，且相邻所述发光单元的颜色不同；
    在所述发光单元上制备第二电极，所述第二电极从对应的所述发光单元的表面延伸至相邻的所述挡墙上；
    在所述非发光区中的所述挡墙结构上开设过孔，所述过孔与所述非发光区的所述第二电极具有一间隙；
    在所述过孔内填充导电材料形成第二接引走线；
    在所述第一电极上制备封装层，其中所述封装层覆盖所述挡墙结构、所述发光层和所述第二电极，所述第二接引走线部分裸露于所述封装层外；
    在所述第一基板对应所述第二接引走线处制备第一接引走线；
    将所述第一基板与所述第二基板结合，其中所述第二接引走线和对应的所述第一接引走线连接。
  9. 根据权利要求8所述的显示面板的制备方法，其中，
    所述第二基板的具体制备步骤如下：
    提供衬底基板；
    在所述衬底基板上制备一层遮光金属材料，图案化形成遮光金属层；
    在所述第二基板上制备缓冲层，所述缓冲层覆盖所述遮光金属层；
    在所述缓冲层上制备一层IGZO材料，图案化后形成有源层，其中 ，有源层包括对应于所述遮光金属层的第一有源层和设于所述发光区中的第二有源层；
    在所述有源层上制备第一绝缘层，在所述第一绝缘层上制备第一金属层；
    在所述缓冲层上制备一层第二绝缘层，其中所述第二绝缘层覆盖所述有源层、所述第一绝缘层和所述第一金属层；
    在所述第二绝缘层上制备第二金属层，其中，设于所述非发光区中的所述第二金属层通过过孔分别与所述第一有源层和所述遮光金属层连接；
    设于所述发光区的所述第二金属层通过过孔与所述第二有源层连接。
  10. 根据权利要求8所述的显示面板的制备方法，其中，所述第二基板的制备步骤还包括
    在所述第二绝缘层上制备一层第三绝缘层，其中，所述第三绝缘层覆盖所述第二金属层，在所述第三绝缘层上开设一开孔，所述开孔对应所述非发光区中的所述第二金属层；
    在所述开孔内制备一层导电材料，图案化后形成所述第一接引走线。
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