WO2021137625A1 - Écran d'affichage, dispositif d'affichage et procédé de fabrication associé - Google Patents

Écran d'affichage, dispositif d'affichage et procédé de fabrication associé Download PDF

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Publication number
WO2021137625A1
WO2021137625A1 PCT/KR2020/019421 KR2020019421W WO2021137625A1 WO 2021137625 A1 WO2021137625 A1 WO 2021137625A1 KR 2020019421 W KR2020019421 W KR 2020019421W WO 2021137625 A1 WO2021137625 A1 WO 2021137625A1
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WIPO (PCT)
Prior art keywords
led chips
support member
layer
adhesive layer
light
Prior art date
Application number
PCT/KR2020/019421
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English (en)
Korean (ko)
Inventor
정부기
박만금
Original Assignee
주식회사 에이맵플러스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from KR1020190179605A external-priority patent/KR102306773B1/ko
Priority claimed from KR1020200008737A external-priority patent/KR20210094907A/ko
Application filed by 주식회사 에이맵플러스 filed Critical 주식회사 에이맵플러스
Publication of WO2021137625A1 publication Critical patent/WO2021137625A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • An embodiment of the invention relates to a display panel and a display device.
  • An embodiment of the present invention relates to a method of manufacturing a display panel or a display device having a light source module.
  • An embodiment of the present invention relates to a panel in which LED chips having a size of micrometers or less are packaged and a method for manufacturing the same.
  • An embodiment of the invention relates to a display device having a display panel.
  • Conventional display devices are mainly composed of a display panel composed of a liquid crystal display (LCD) and a backlight, but recently, a semiconductor device such as a light emitting diode (LED) is used as a pixel as it is.
  • a display device using such an LED is being developed in a form that does not require a separate backlight.
  • a display device using such an LED can be made compact, and a high-brightness display with superior light efficiency compared to a conventional LCD can be realized.
  • the aspect ratio of the display screen can be freely changed and implemented in a large area, various types of large displays can be provided. In advertising or screen display in public places, the demand for large screens is increasing, and LEDs are used as display means of large screens.
  • An embodiment of the present invention provides a display device, a display panel, and a method of manufacturing the same for bonding a plurality of LED chips to one surface of a transparent circuit board and irradiating light through the other surface (or lower surface) of the circuit board.
  • An embodiment of the present invention provides a display device, a display panel, and a method of manufacturing the same in which one surface of a plurality of LED chips is adhered to a transparent circuit board and packaged.
  • An embodiment of the present invention provides a display device, a display panel, and a method for manufacturing the same in which one surface of a plurality of LED chips emitting light of at least three colors or the same color is adhered to a transparent circuit board and packaged.
  • An embodiment of the present invention provides a display panel in which a plurality of LED chips are picked up on a conductive carrier, and a lower surface of each of the LED chips is adhered to a transparent circuit board, and a method of manufacturing the same.
  • An embodiment of the present invention provides a display panel in which an adhesive layer is adhered to a lower surface of each of a plurality of LED chips and then adhered to the circuit board, and a method for manufacturing the same.
  • An embodiment of the present invention is a display panel and a display device capable of sealing a plurality of LED chips attached to a transparent circuit board with a resin member, and electrically connecting the electrodes of the LED chip to the pads of the circuit board with a pattern of a connection part can provide
  • An embodiment of the present invention may provide a display panel and a device thereof in which a light blocking unit is disposed between the other surface of a circuit board and a transparent cover, and an area overlapping each of the LED chips is opened in the light blocking unit area.
  • An embodiment of the present invention may provide a display panel in which a light blocking part and a phosphor layer are disposed between the other surface of a circuit board and a transparent cover, and an apparatus thereof.
  • a display panel includes a transparent support member; a thin film transistor (TFT) unit disposed on the upper surface of the support member and having pads; a plurality of LED chips disposed on the upper surface of the support member and having electrodes thereon; a transparent adhesive layer for adhering each of the plurality of LED chips to the upper surface of the support member; a resin member covering the plurality of LED chips; a plurality of connecting portions disposed on the resin member and connecting the electrodes and the pads, respectively; and a light blocking layer having a plurality of openings, each of which is open to a region facing the LED chip, on a lower surface of the support member, wherein light emitted from each of the LED chips is emitted to each of the openings through the support member.
  • TFT thin film transistor
  • the plurality of connection parts may include a photosensitive conductive material.
  • the light blocking layer may be adhered between the lower surface of the support member and the adhesive layer.
  • the light blocking layer may be adhered between the adhesive layer and the upper surface of the transparent cover.
  • the plurality of LED chips emit red, green, and blue light to form a pixel region, and a portion of the adhesive layer may be disposed in each of the openings.
  • the plurality of LED chips emit light of blue color, and among the plurality of LED chips forming the pixel region, a first phosphor layer in a first opening facing the first LED chip; and a second phosphor layer in a second opening facing the first LED chip among the plurality of LED chips. and a transparent layer is formed in the third opening facing the third LED chip among the plurality of LED chips, and a unit pixel is formed using the blue color light and the light wavelength converted by the first and second phosphor layers.
  • a passivation layer for protecting the plurality of connection parts, the resin member, and the upper part of the TFT part may be included.
  • the resin member and the light blocking layer may include a light or heat absorbing material.
  • a plurality of the adhesive layers are adhered to each of the LED chips, and may include thermally conductive inorganic fillers.
  • the adhesive layer may be adhered to an upper surface of the support member, and the resin member may be adhered to a side surface and an upper surface of each of the LED chips, and an outer surface of each of the adhesive layers.
  • the thickness of the adhesive layer is in the range of 0.1 ⁇ m to 50 ⁇ m
  • the transparent cover and the support member may be made of a glass material.
  • Each of the LED chips includes a first electrode and a second electrode
  • the TFT includes a first pad and a second pad on the periphery of each LED chip
  • the connection part includes a first electrode and the first electrode on the resin member.
  • a first connection part connected between the pads and a second connection part connected between the second electrode and the second pad may be included, and the first and second connection parts may include a photosensitive conductive material.
  • a method of manufacturing a display panel includes: a first step of picking up a plurality of LED chips having upper electrodes disposed on a lower surface of a conductive carrier; a second step of facing the conductive carrier on an auxiliary substrate on which a transparent adhesive layer is formed, and stamping the adhesive layer on each of the lower surfaces of the LED chips; When the adhesive layer is stamped on each of the LED chips, a conductive carrier is placed on a circuit board having a thin-film transistor (TFT) part, and the LED chips are attached to the upper surface of the transparent support member of the circuit board with an adhesive layer.
  • TFT thin-film transistor
  • the third step of making and a fourth step of forming a light blocking layer having a plurality of openings in which regions facing the LED chips are opened on a lower surface of the support member, wherein light emitted from each of the LED chips passes through the support member and enters the openings. can be released separately.
  • forming a resin member on the circuit board sealing the plurality of LED chips and the TFT pad; opening electrodes disposed on the plurality of LED chips and pads of the TFT unit; forming a photosensitive conductive layer on the resin member; and exposing and developing an area on the photosensitive conductive layer except for the connection area, and then forming connection portions made of a photosensitive material connected to each of the pad and the electrodes, respectively.
  • the method includes forming a passivation layer on the resin member and the connection parts, wherein the resin member and the light blocking layer are light or heat absorbing materials, and the resin member is the adhesive layer and the LED chip.
  • the method may include bonding a transparent cover to the lower surface of the support member with an adhesive layer made of a transparent material, wherein the adhesive layer may be adhered between the transparent cover and the lower surface of the support member.
  • the light blocking layer may be adhered between the lower surface of the support member and the adhesive layer.
  • the light blocking layer may be adhered between the adhesive layer and the upper surface of the transparent cover.
  • the plurality of LED chips emit red, green, and blue light to form a pixel region, and a portion of the adhesive layer may be disposed in each of the openings.
  • the plurality of LED chips emit light of blue color, and among the plurality of LED chips forming the pixel region, a first phosphor layer in a first opening facing the first LED chip; and a second phosphor layer in a second opening facing the first LED chip among the plurality of LED chips. and a transparent layer is formed in the third opening facing the third LED chip among the plurality of LED chips, and a unit pixel is formed using the blue color light and the light wavelength converted by the first and second phosphor layers.
  • a process of inspecting and replacing defective LED chips before and after picking up the plurality of LED chips may be performed.
  • an adhesive layer is attached to one surface of a plurality of LED chips in advance through a stamping process and then adhered to a transparent circuit board, so that the manufacturing process can be simplified, and the thickness of the adhesive layer can be provided uniformly
  • the embodiment of the present invention has a technical effect of removing the bonding process on the surface of the circuit board by attaching an adhesive layer to one surface of the LED chip through a stamping process.
  • the embodiment of the present invention has a technical effect that can protect the LED chips by bonding a plurality of LED chips having an adhesive layer formed thereon to a circuit board through a conductive carrier having elasticity.
  • An embodiment of the invention has a technical effect that can adhere a plurality of LED chips to the circuit board for each block or color.
  • the embodiment of the present invention has an effect of sealing the area except for the emitting surface of the LED chips by sealing the plurality of LED chips attached to the circuit board with a resin member.
  • An embodiment of the present invention may electrically connect the electrodes of the LED chip to the pads of the circuit board through a connection part disposed on the surface of the resin member for a plurality of LED chips attached to the circuit board. Accordingly, interference of light emitted to the lower surface of the circuit board may be blocked and light extraction efficiency may be improved.
  • the TFT unit and the LED chips are arranged on one surface of the circuit board, and the light emitting area may be provided through the other surface. Accordingly, a connection pattern for connecting to the lower pattern may not be formed on the side surface or the outer portion of the circuit board, and components such as a driver chip may be disposed on one surface of the circuit board.
  • An embodiment of the present invention simplifies the process by sealing a plurality of LED chips on one surface of a circuit board with a resin member, forming a conductive layer in a wet method, and then forming a connection part through a patterning process, thereby simplifying the process and patterning the connection part. It can improve reliability.
  • An embodiment of the invention provides a technical effect that can select and replace a defective LED chip before or/and after attaching a plurality of LED chips to a conductive carrier, and/or after attaching the LED chips to a circuit board, or additionally disposed there is
  • An embodiment of the present invention may provide a light source module, display panel or display device in which a plurality of LED chips are adhered to one surface of a circuit board with an adhesive layer and at least one of a light blocking unit, a phosphor layer, or a transparent cover is disposed on the other surface. .
  • the embodiment of the invention has a technical effect that the process yield of a light source module, a display panel, or a display device having a plurality of LED chips can be improved.
  • LED chips that emit light of the same color according to an embodiment of the present invention, or arranging LED chips that emit at least two or three kinds of light, improve the reliability of a light source module, a display panel, and a display device There are possible technical effects.
  • 1 and 2 are examples of cutting a circuit board having a TFT unit in units of panels according to an embodiment of the present invention.
  • FIG. 3 is a view showing an example of a display device having a plurality of LED chips according to an embodiment of the present invention.
  • FIGS. 4 and 5 are views illustrating a process of picking up a plurality of LED chips on a conductive carrier according to an embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing an example of an LED chip as an example of the invention.
  • FIG. 7 is a view showing a process of facing the adhesive layer on the lower surface of a plurality of LED chips in an embodiment of the present invention.
  • FIG 8 is a view illustrating a process in which an adhesive layer is coated on an auxiliary substrate according to an embodiment of the present invention.
  • FIG. 9 is a detailed configuration diagram of a conductive carrier in an embodiment of the present invention.
  • 10A and 10B are diagrams for explaining a pick-up process of an electrostatic chuck according to a comparative example.
  • FIG. 11 is a view illustrating an example of a conductive carrier layer in which LED chips to which an adhesive layer is adhered are arranged in an embodiment of the present invention.
  • FIG. 12 is a view showing an example of bonding LED chips picked up on a conductive carrier to a circuit board in an embodiment of the present invention.
  • 13 is an example in which LED chips are attached to one surface of a circuit board according to an embodiment of the present invention.
  • first to third LED chips are arranged on a circuit board according to an embodiment of the present invention.
  • 15A and 15B are diagrams illustrating a packaging process of an LED chip attached to a circuit board according to an embodiment of the present invention.
  • 16 is a detailed view of a process of exposing an electrode of an LED chip on the circuit board of FIG. 15A.
  • 17 is a view for explaining a packaging process of the LED chip attached to the circuit board of FIG. 15A.
  • FIGS. 15A and 17 are a detailed view of a process of exposing an electrode of an LED chip and forming a conductive layer on the circuit board of FIGS. 15A and 17 .
  • 19(A)-(C) are views for explaining a process of forming a connection part on an LED chip according to an embodiment of the present invention.
  • 20 is a diagram illustrating an example in which light is emitted by first to third LED chips on a circuit board in a display device according to an embodiment of the present invention.
  • 21 is a diagram illustrating an example of a connection between a TFT unit and an LED chip disposed on one surface of a circuit board according to an embodiment of the present invention.
  • FIG. 22 is a first modified example of the display device according to the embodiment of the present invention of FIG. 20 .
  • 29 is a second modified example of the display device according to the embodiment of the invention of FIG. 20 .
  • FIG. 30 is an example of a lens array of the transparent cover of FIG.
  • FIG. 31 is an example in which a driving board is connected to the circuit board of FIG. 22 .
  • FIG. 32 is an example of the plan view of FIG. 31 .
  • 33 is an example illustrating an edge side of a circuit board according to an embodiment of the present invention.
  • 34(A)(B) is a view showing an example of replacing an LED chip on a circuit board according to an embodiment of the present invention.
  • 35 and 36 are examples of arrangement of the region P11 and LEDs on the circuit board according to an embodiment of the present invention.
  • FIG. 37 is a graph comparing an adsorption force for adsorbing LED chips, a dechucking force for releasing, and an adhesive force of an adhesive layer according to an embodiment of the present invention.
  • each feature of the various embodiments of the present invention may be partially or wholly combined or combined with each other, technically various interlocking and driving are possible, and each of the embodiments may be implemented independently of each other or may be implemented together in a related relationship. may be
  • a thin-film transistor (TFT) and LED chips are mounted in an individual light emitting area A1 on one surface (or an upper surface) of the support member 1 and a wiring pattern for driving them is formed.
  • the other surface (or the rear surface) of the support member 1 may be a light emitting surface or a display surface from which the lights emitted from the LED chips are emitted.
  • Each of the LED chips may be a mini LED or micro (eg, 100 ⁇ m or less) sized LEDs.
  • Each of the LED chips may be a nano-sized LED.
  • a driver IC or various components for driving the LED chip or TFT may be disposed on one surface of the support member 1 .
  • the driver IC or various components may be disposed on one surface of the support member 1 instead of on the other surface. Accordingly, light may be emitted through the transparent material of the support member 1 .
  • the support member 1 may be cut into unit-sized display panels 11, 12, 13, and 14 through cutting lines C21 and C22.
  • the individual support member 1 having the wiring pattern may be defined as a circuit board.
  • the support member 1 includes a support layer of the circuit board, and may be formed of a transparent material, and may include at least one of a plastic material, a glass material, a ceramic material, and a transparent insulating film.
  • the support member 1 may be a transparent flexible substrate having a pattern formed thereon or a non-flexible substrate.
  • the support member 1 may or may not have a lower pattern formed around the periphery.
  • each of the display panels 11, 12, 13, and 14 may be implemented in a size suitable for various application fields, such as a wrist watch, a mobile phone terminal, or a tiling-type monitor or TV, or a large TV or a single panel of a billboard.
  • the size of each of the display panels 11 , 12 , 13 , and 14 may be 2 inches or more or the size of a display having a micro LED, but is not limited thereto.
  • the boundary portion between the adjacent display panels 11, 12, 13, and 14 is a portion in which the support member 1 is cut to the size of individual panels.
  • the high heat emitted from the laser beam There may be a problem in that thermal shock is applied to or destroyed by the device or parts, and also various wiring adjacent to the cutting line may be deteriorated.
  • An example of the invention is to cut along the cutting lines C21 and C22 by a laser beam in a low-temperature vacuum chamber. Accordingly, thermal shock to the edge regions A2 and A3 of the individual support member 1 is minimized, and deterioration of the TFT and various components or wiring can be reduced.
  • the low-temperature vacuum chamber is a chamber in an environment in the range of 0 degrees to -50 degrees, and when gas is injected, a laser beam is irradiated.
  • the gas supplied from the low-temperature vacuum chamber may be selected and controlled, and may include at least one or both of an inert gas and a fluorine gas.
  • the gas is, for example, at least one of N 2 , Ar, He, CF 4 , SF 6 , NH 3 , CF 4 /H 2 , CHF 3 , C 2 F 6 , H 2 , C 2 H 4 , CH 4 and O 2 may be included.
  • the content of oxygen in the gas may be provided in the range of 0.1% or more, for example, 0.1% to 10%.
  • the type of gas may be selected through the synthesis unit and the content thereof may be adjusted. At this time, since plasma is generated and cut with a laser beam in an environment in the low-temperature vacuum chamber, deterioration of parts, elements, wiring, etc. caused by cutting of the support member 1 can be reduced. In addition, it is possible to minimize the heat damage (HAZ) in the vicinity due to high temperature during cutting, and it is possible to reduce the heat damage area to an area of 20 ⁇ m or less from the cutting lines C21 and C22. Accordingly, it is possible to improve the thermal reliability of the display panel or the substrate.
  • HZ heat damage
  • the process is carried out at a low temperature, it is possible to increase the processing speed.
  • heat damage to the substrate is reduced, and cracks, chipping, and condensation caused by humidity can be reduced. Accordingly, since the substrates are precisely cut in the low-temperature vacuum chamber, the gap between the panels can be reduced and the processing tolerance can be minimized.
  • the cut display panel 11 may be divided into a central emission area A1 and edge areas A2 and A3 which are non-emission areas.
  • upper pads or edge patterns 31 may be disposed on the upper surface Sa, or pads may be disposed at upper and lower edge areas. In this case, the pads may be formed in areas other than the display area. have.
  • the upper pads or edge patterns 31 may be conductive leads, and some may be used as test terminals.
  • the upper edge pattern 31 may be disposed on a cutting line passing through an edge portion of the unit panel.
  • unit pixels having a TFT unit 50 and a plurality of LED chips 2A, 2B, and 2C are arranged in a matrix form on one surface (or upper surface) Sa of the individual support member 1 .
  • the embodiment of the present invention provides blocks D1, D2, and D3 having previously provided LED chips 2A, 2B, and 2C, and the blocks (D1, D2, D3)
  • Each of 10 or more or 100 or more LED chips may be arranged at a preset interval.
  • the preset interval may be an interval for mounting the LED chips on the display panel.
  • Each of the blocks D1, D2, and D3 is, for example, a first block D1 in which first LED chips 2A are arranged, a second block D2 in which second LED chips 2B are arranged, and a third A third block D3 in which the LED chips 2C are arranged may be included.
  • the first LED chips 2A may emit red light
  • the second LED chips 2B may emit green light
  • the third LED chips 2C may emit blue light.
  • a plurality of first to third LED chips 2A, 2B, and 2C may be arranged at preset intervals in horizontal and vertical directions in each of the first to third blocks D1, D2, and D3.
  • Each of these blocks (D1, D2, D3) is sequentially adhered to a predetermined area on the support member 1, and then the LED chips of each block are electrically connected to each other, so that the LED on the support member 1 is It is possible to mount chips 2A, 2B, and 2C.
  • the LED chips a lower surface from which light is emitted is attached to one surface Sa of the support member 1 , and electrodes may be exposed on top of the LED chips.
  • the LED chips emit light of the same color (eg, blue)
  • all LED chips required for the panel are arranged in one block, and then the support member 1 ) can be mounted on
  • a first defective chip inspection process is performed.
  • the first defective chip inspection process may be performed on the first to third LED chips for each color block, or after inspecting the defective LED chips for the same color blocks, the defective LED chips may be removed and remounted. As the number of LED chips arranged on the unit panel of the LED display increases, the number of defective LED chips may increase, so that the defective LED chips may be removed and replaced in advance.
  • the inspection process of the defective LED chip may be performed using (Probe) equipment, wireless lighting equipment, automatic optical inspection (AOI) equipment, or the like. By extracting defective LED chips through this inspection process, the yield of the panel can be improved. Thereafter, after replacing the defective LED chip in the first defective chip inspection process, the panel yield can be further increased through the re-inspection process.
  • a resin member 150 that absorbs or blocks light may be disposed on the support member 1 to block light leakage or emission in the upper direction, and the other surface Sb or the lower direction of the support member 1 can be released as
  • the resin member 150 may include a resin member made of a light absorbing, heat absorbing or heat dissipating material and a passivation layer, which will be described later.
  • the LED chips 2A, 2B, and 2C of each block disposed on the support member 1 may be electrically connected to the TFT unit 50 to be driven, and the first to third LED chips 2A, 2B , 2C) may each be a sub-pixel, and a minimum area in which at least one of the first to third LED chips 2A, 2B, and 2C is disposed may be defined as a unit pixel.
  • the unit pixel three types of LED chips 2A, 2B, and 2C emitting different colors may be used, or a pixel area may be implemented by combining a blue LED chip and a phosphor layer.
  • the unit pixel may be implemented with LED chips 2A, 2B, and 2C emitting different colors, for example, at least three colors, or a combination of LED chips emitting the same color and sheets such as quantum dots or phosphors. have.
  • the unit pixel may emit red, green, and blue light.
  • the LED chips 2A, 2B, and 2C may include red (R), green (G), and blue (B) LED chips.
  • the LED chips 2A, 2B, and 2C may all include LED chips emitting the same color.
  • the LED chips 2A, 2B, and 2C are chips having a micro size for sub-pixels, and for example, the length of one side of each LED chip may be in the range of 10 ⁇ m to 100 ⁇ m.
  • the size of the LED chips 2A, 2B, and 2C may be in the range of a microscopic size ( ⁇ 1 ⁇ m, or 1 ⁇ m-50 ⁇ m) with one side length depending on the micro-manufacturing technology of the LED chip.
  • the size of the LED chips 2A, 2B, and 2C may be in a range of 1 ⁇ m to 50 ⁇ m ⁇ 1 ⁇ m to 50 ⁇ m or a nano size, but is not limited thereto.
  • the display panels when a plurality of display panels are closely coupled for a display device, they may be closely coupled so as not to be distinguished from the outside. That is, the display panels may have an arrangement structure or a coupling structure in which dark lines are not generated at the boundary portion.
  • the size of the display device including the display panels may vary according to the number of the display panels combined and the size of each panel. Also, in the display device, each panel has a structure that can be combined, separated or removed.
  • the circuit board of the display panel a TFT array board capable of driving a plurality of LED chips 2A, 2B, and 2C is used. That is, the circuit board has a TFT unit 50 for driving the plurality of LED chips 2A, 2B, and 2C and various wirings are formed.
  • the circuit board may include a circuit, for example, a thin film transistor, configured to independently drive sub-pixels, for example, the LED chips 2A, 2B, and 2C, disposed in each pixel region 2 .
  • a circuit for example, a thin film transistor, configured to independently drive sub-pixels, for example, the LED chips 2A, 2B, and 2C, disposed in each pixel region 2 .
  • the LED chips 2A, 2B, and 2C disposed in each pixel region 2 .
  • each pixel area 2 of the circuit board 20 at least three LED chips 2A, 2B, and 2C emitting monochromatic light of red, green, and blue are arranged, and the LED is illuminated by a signal applied from the outside. Lights of red, green and blue colors are emitted from the chip to display an image.
  • the plurality of LED chips 2A, 2B, and 2C may be mounted in a process separate from the TFT array process. That is, the TFT and various wirings are formed by a photo process, but the LED chips 2A, 2B, and 2C may be mounted through a separate bonding process or a reflow process.
  • the configuration of the circuit board having the TFT and the plurality of LED chips 2A, 2B, and 2C may be defined as a light source module.
  • the circuit board may include the LED chips 2A, 2B, and 2C and the TFT unit 50 connected thereto.
  • the circuit board may be formed of a transparent support member 1 such as glass, and the TFT unit 50 may be disposed on a first surface (one surface or an upper surface) of the support member 1 .
  • the light generated from the LED chips 2A, 2B, and 2C may be emitted through the second surface (the other surface or the lower surface) Sb of the support member 1 to function as a display device.
  • blocks D1, D2, and D3 having previously provided LED chips 2A, 2B, and 2C are prepared.
  • 10 or more or 100 or more LED chips may be arranged at a preset interval.
  • the preset interval may be an interval for mounting the LED chips on the display panel, and may be arranged to be arranged on different positions.
  • Each of the blocks D1, D2, and D3 is, for example, a first block D1 in which first LED chips 2A are arranged, a second block D2 in which second LED chips 2B are arranged, and a third A third block D3 in which the LED chips 2C are arranged may be included.
  • the first LED chips 2A may emit red light
  • the second LED chips 2B may emit green light
  • the third LED chips 2C may emit blue light.
  • a plurality of first to third LED chips 2A, 2B, and 2C may be arranged at preset intervals in horizontal and vertical directions in each of the first to third blocks D1, D2, and D3.
  • the process of attaching and packaging the first LED chip 2A will be described, and the description of the second and third LED chips 2B and 2C will be omitted or refer to the description of the first LED chip 2A. do it with
  • a conductive carrier connected to the support shaft 230 of the carrier body 250 ( 210) is aligned on the first block D1.
  • the electrodes K1 and K2 may be disposed on the upper portions of the first LED chips 2A, and a member or sheet emitting light may be disposed on the lower portions.
  • the light emitting member may be a transparent layer or a growth substrate.
  • LED chips of the same color may be arranged in one block, and may be aligned on a conductive carrier.
  • the first LED chips 2A are attached to the conductive carrier 210 as shown in FIG.
  • the conductive carrier 210 to which the first block D1 is attached may be moved in a vertical upward direction or the support body 310 may be moved in a different direction.
  • the lower portion of the conductive carrier 210 is provided with an elastic member 215 to reduce the impact transmitted to the first LED chip (2A) when the conductive carrier 210 is moved in the vertical downward direction. and the first LED chip 2A or other LED chips may be attached thereto.
  • Electrodes K1 and K2 disposed on the first LED chip 2A are attached to the conductive carrier 210 , and the electrodes K1 and K2 may include at least two electrodes.
  • the electrodes K1 and K2 may be pads of the first LED chip 2A.
  • a lower surface of the first LED chip 2A may be exposed.
  • a second defective chip inspection process is performed. When the first to third LED chips 2A, 2B, and 2C for each color are attached to the conductive carrier 210 or a single color LED chip is attached to the entire area, the LED chip or non-attached chip area is detected. will do Through this inspection, the defective LED chip can be removed through double-sided tape, and the defective LED chip can be removed or the LED chip can be attached to the non-attached area. Through the second defective chip inspection process, a defect rate that may be generated during the process may be reduced, and the yield of panels may be improved.
  • At least one or both of the LED chips 2A, 2B, and 2C is a light-transmitting substrate 101, light-emitting structures 102, 103, 104 on the light-transmitting substrate 101, and electrodes K1 and K2 disposed on the light-emitting structures 102, 103, 104. ) may be included.
  • a reflective layer 107 may be included between the uppermost layer of the light emitting structures 102 , 103 , and 104 and the electrodes K1 and K2 .
  • the light-transmitting substrate 101 is a growth substrate or a transparent layer, and may be formed of an insulating material or a semiconductor material.
  • the light-transmitting substrate 101 may be selected from a group including, for example, a sapphire substrate (Al 2 O 3 ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, and may be removed.
  • the light emitting structures 1021 , 103 , and 104 may be formed of a compound semiconductor.
  • the light emitting structures 102 , 103 , and 104 may be formed of, for example, a group II-VI or group III-V compound semiconductor.
  • the light emitting structures 1021 , 103 , and 104 include at least two or more elements selected from aluminum (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As), and nitrogen (N).
  • the light emitting structures 102 , 103 , and 104 include a first conductivity type semiconductor layer 102 connected to the first electrode K1 , a second conductivity type semiconductor layer 104 connected to the second electrode K2 , and the first and first The active layer 103 may be disposed between the two conductive semiconductor layers 102 and 104 .
  • the first and second conductivity-type semiconductor layers 102 and 104 may be implemented with at least one of group III-V or group II-VI compound semiconductors.
  • the first and second conductivity-type semiconductor layers 102 and 104 include, for example, at least one selected from the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. can do.
  • the first conductivity-type semiconductor layer 102 may be an n-type semiconductor layer doped with an n-type dopant such as Si, Ge, Sn, Se, or Te.
  • the second conductivity-type semiconductor layer 104 may be a p-type semiconductor layer doped with a p-type dopant such as Mg, Zn, Ca, Sr, or Ba.
  • the first and second conductivity-type semiconductor layers 102 and 104 may be p-type and n-type semiconductor layers.
  • the active layer 103 may be implemented with a compound semiconductor.
  • the active layer 103 may be embodied, for example, by at least one of a group 3-5 or group 2-6 compound semiconductor.
  • the active layer 103 may include a plurality of well layers and a plurality of barrier layers arranged alternately, and may include InGaN/GaN, GaN/AlGaN, AlGaN/AlGaN.
  • the reflective layer 107 may be formed of a metal or non-metal material, and may include a single layer or multiple layers. As another example, the reflective layer 107 may include a DBR structure having different refractive indices.
  • the first and second electrodes K1 and K2 may be disposed on the LED chips 2A, 2B, and 2C.
  • the LED chips 2A, 2B, and 2C may be provided as flip chips, vertical chips, or horizontal chips depending on the positions of the first and second electrodes K1 and K2.
  • the first and second electrodes K1 and K2 are Ti, Al, In, Ir, Ta, Pd, Co, Cr, Mg, Zn, Ni, Si, Ge, Ag, Ag alloy, Au, Hf, Pt, It contains at least one or two or more of Ru and Rh, and may be formed as a single layer or multiple layers.
  • the first and second electrodes K1 and K2 include a stacked structure of Ti/Ag or Ti/ITO, and the Ag or ITO layer may be applied to prevent oxidation of Ti.
  • a protective layer, an insulating layer, or an insulating reflective layer may be further disposed in the region between the first and second electrodes K1 and K2 or on the surface of the light emitting structure, but is not limited thereto.
  • the structure of the LED chips 2A, 2B, and 2C is an example, and other semiconductor layers may be further disposed between each layer, but is not limited thereto.
  • a layer or film having a wavelength conversion material such as a phosphor may be disposed under the light-transmitting substrate 101 of the LED chips 2A, 2B, and 2C.
  • the phosphor may include at least one of yellow, green, red, and blue.
  • the phosphor may wavelength-convert the light emitted from the LED chips 2A, 2B, and 2C into red, green, yellow, and blue light.
  • a phosphor layer is further disposed on the lower surface of each LED chip, it may be adhered to the transparent support member with an adhesive layer.
  • the conductive carrier 210 to which the first LED chips 2A are attached respectively corresponds to or faces the auxiliary substrate 353 .
  • the auxiliary substrate 353 is disposed on the upper body 351 rotated by the rotation shaft 350 , and may be rotated together with the upper body 351 .
  • An adhesive layer B0 may be formed on a surface or an upper surface of the auxiliary substrate 353 .
  • the adhesive layer B0 may include a transparent material.
  • the adhesive layer B0 may be a transparent adhesive material.
  • the adhesive layer B0 may be made of a transparent inorganic oxide-based material, and in this case, it is possible to reduce discoloration due to light.
  • the adhesive layer B0 may include an adhesive material, a heat dissipation material having thermally conductive nanopowder, and/or a scattering prevention material.
  • the adhesive layer B0 may include a thermally conductive inorganic filler, or a carbon material or a ceramic material.
  • the adhesive layer B0 is another material, and may be a transparent material of an organic or inorganic material.
  • the thickness of the adhesive layer B0 may be 2 ⁇ m or less, for example, 0.2 ⁇ m to 2 ⁇ m.
  • the adhesive layer B0 may be provided with a uniform thickness over the entire region on the auxiliary substrate 353 .
  • the transmittance of the adhesive layer B0 may be 95% or more, for example, 98% or more.
  • the adhesive layer B0 may include an oxide material having at least one of Ag, Ti, Al, and Mo.
  • the adhesive layer B0 may include a multilayer structure, for example, a multilayer oxide structure such as Ti/Al/Ti or Mo/Al/Mo.
  • the auxiliary substrate 353 after dispensing a liquid adhesive material on the auxiliary substrate 353 , it may be formed in the form of spin coating. At this time, since the auxiliary substrate 353 is rotated, the thickness of the adhesive layer B0 may be provided with a uniform thickness. When a separate adhesive layer is formed on the LED chip, a thickness deviation may occur, and there is a problem in that a difference in adhesive strength with each LED chip is generated.
  • the auxiliary substrate 353 may be made of glass or plastic.
  • the liquid adhesive layer B0 may be deposited on the auxiliary substrate 353 by a spray method, or may be formed by a dipping method, a slit method, a roll coating method, or a printing method.
  • the adhesive material may have a viscosity of 1 CP or more, for example, a viscosity of about 1 to 150 CP.
  • the conductive carrier 210 is moved vertically downward or in the direction of the auxiliary substrate 353 , and the first LED chip 2A is brought into contact with the auxiliary substrate 353 . , moving in the vertical direction.
  • the adhesive layer B0 may be attached or adhered to the lower surface of the first LED chip 2A in the form of a stamp. That is, the adhesive layer B0 may be formed on the transparent substrate of each of the first LED chips 2A through the stamping process of the first LED chips 2A (see FIG. 11 ). 11 , the adhesive layer B10 may be formed to have a uniform thickness on the transparent substrate disposed under each of the first LED chips 2A.
  • the width or area of the adhesive layer B10 disposed on the lower surface of each of the LED chips 2A, 2B, 2C is the same as the width or area of the lower surface of the LED chips 2A, 2B, 2C, or the width or the lower surface It may be less than or equal to 120% of the area.
  • a third defective chip inspection process may be performed.
  • the LED chip of each color block to which the adhesive layer B10 is attached may be provided through the third defective chip inspection process, or the LED chip of a single block of the same color may be provided.
  • the conductive carrier 210 may include an elastic member 215 at a lower portion and may be a support plate 211 .
  • the elastic member 215 may include a conductive elastic member 212 , a dielectric layer 214 and an electrode layer 213 between the support plate 211 and the conductive elastic member 212 .
  • the dielectric layer 214 is formed under the support plate 211 and may support the dielectric layer 214 .
  • the support plate 211 may be a metal material or a non-metal material, or may include, for example, an aluminum material.
  • the dielectric layer 214 may include a non-metal material, for example, at least one of polyimide, polyester, ceramic, tantalum, and a silicon film.
  • the ceramic material is an amorphous ceramic material Al 2 O 3 , Y 2 O 3 , ZrO 2 , AlC, TiN, AlN, TiC, MgO, CaO, CeO 2 , TiO 2 , BxCy, BN, SiO 2 , SiC, YAG, In the group consisting of AlF 3 , one type or two or more types are each mixed and used.
  • the thickness of the dielectric layer 214 may be 1 mm or less, for example, in the range of 0.1 mm to 1 mm.
  • the electrode layer 213 may be disposed between the dielectric layer 214 and the conductive elastic member 212 .
  • An adhesive layer 216 may be disposed around the electrode layer 231 to bond the dielectric layer 214 and the elastic member 212 to each other.
  • the adhesive layer 216 may be a material of the dielectric layer 214 or a material such as silicone or epoxy.
  • the electrode layer 213 may receive power through the electrode line 218 and may include at least one or two or more of a conductive metal, for example, tungsten, molybdenum, titanium, silver, and copper.
  • electrode patterns in the form of a mesh are arranged, and may be uniformly distributed over the entire area.
  • the thickness of the electrode layer 213 may be 50 ⁇ m or less, for example, 15 to 50 ⁇ m.
  • the electrode layer 213 may be formed as a single layer or a multilayer.
  • the conductive elastic member 212 may include a conductive material having elasticity, and may be a polymer having viscosity and elasticity.
  • the conductive elastic member 212 may be rubber, a thermoplastic polymer, or a thermosetting polymer.
  • the conductive elastic member 212 may include a metal such as Ni, Cu, Ag, Al, or a metal oxide powder or a filler such as carbon black therein, and may function as an electrically conductive polymer.
  • the conductive carrier 210 is brought into contact with the LED chips 2A, 2B, and 2C, power is supplied through the electrode line 218.
  • an electrostatic attraction is generated between the dielectric layer 214 and the LED chips 2A, 2B, 2C or the conductive elastic member 212, and as time cures, the amount of charge decreases Each can be accumulated. Accordingly, the LED chips 2A, 2B, and 2C can be picked up on the lower surface of the conductive carrier 210 or the lower surface of the conductive elastic member 212 without a separate adhesive, and the conductive elastic member 212 in the pickup process. can decrease or buffer the pressure applied to the LED chips 2A, 2B, and 2C.
  • the pick-up process can be performed in the process of FIG. 4, and after being picked up, as shown in FIG. 11, the process of stamping the adhesive layer B0 to each LED chip 2A, 2B, 2C can be performed.
  • the power may be a DC voltage.
  • the first LED chip 2A having the adhesive layer B10 disposed on the lower portion of the conductive carrier 210 may correspond to or face the support member 1 or the circuit board. have.
  • the positions at which the plurality of first LED chips 2A are mounted on the circuit board 20 are set in advance, so that the conductive carrier 210 on which the first LED chips 2A is picked up is held by the support member 1 . ) or it can be aligned on the circuit board.
  • the first LED chips 2A attached to the conductive carrier 210 are placed on the support member 1 . It can be placed on (Release) and adhered with an adhesive layer (B10).
  • the support frame BS on which the support member 1 is disposed is a support member, and maintains a predetermined temperature, that is, 250 degrees or less, for example, 100 degrees to 250 degrees to facilitate curing of the transparent adhesive layer B10. It may be an electrostatic chuck. By providing a constant temperature deviation at this time, crack prevention in the resin formation process mentioned later can be suppressed. In this way, the LED chips 2A, 2B, and 2C of blocks of each color may be sequentially disposed on the upper surface of the support member 1, or LED chips of blocks of the same color may be disposed through a single attachment process.
  • the support member 1 has a plurality of pads 61 around or outside the area where the LED chips are to be arranged. , 63) can be arranged. That is, the pads 61 and 63 may be connected to the respective electrodes of the respective LED chips 2A, 2B, and 2C.
  • the plurality of pads 61 and 63, the plurality of first LED chips 2A, the plurality of second LED chips 2B, and the plurality of third LED chips 2C are provided on the support member 1 . It may be disposed on the upper surface.
  • the plurality of pads 61 and 63 may include a first pad 61 and a second pad 63 and may be alternately repeated.
  • the first LED chips 2A may be arranged on the support member 1 or the circuit board.
  • the adhesive layer B10 may be respectively disposed between the upper surface of the support member 1 and the first LED chip 2A.
  • the present invention can attach the LED chips 2A, 2B, and 2C to the adhesive layer B10 without performing a process of forming a separate solder on the pads 61 and 63 on the support member 1 .
  • the LED chip is attached on the circuit board or the support member by a natural unloading method rather than a pressurization method, there is no damage to the LED chip and hardening the adhesive layer (B10) by heat treatment after loading, the process This can be simplified.
  • a portion of the adhesive layer B10 may extend to the outer side surfaces of the LED chips 2A, 2B, and 2C by the loading process.
  • the second LED chip 2B of each second block and the third LED chip 2C of the third block shown in FIG. 4 are further aligned on the circuit board 20, respectively. can give That is, after the conductive carrier 210 is placed on the support member 1, the LED chips 2A, 2B, and 2C for each block are attached to the upper surface of the support member 1 as an adhesive layer B10, and then, the It will cut off the power supply.
  • the adhesive layer B10 is adhered to the upper surface of the support member 1 by a predetermined pressure, so that the LED chips for each block can be arranged, and the flow of the LED chips can be suppressed when attached.
  • 0V may be charged to the conductive elastic member 212 . That is, when the same voltage is applied and then blocked, a voltage of 0V is applied due to the conductive material of the conductive elastic member 212 , so that the LED chips can be separated from the conductive carrier 210 . Since the residual charge is easily discharged by the conductive elastic member 212, when a voltage is applied, the adsorption force can be increased, and when the power is turned off, the charged amount can be discharged without affecting the LED chip.
  • FIG. 37 is a graph comparing the adsorption force for adsorbing the LED chips, the dechucking force for releasing the LED chips, and the adhesion force of the adhesive layer.
  • the holding force of the upper conductive carrier (ESC) and the lower conductive carrier (ESC (backplane)) In the first step TA1, when the plurality of LED chips are attached to the support member, the adsorption force moves to the lower conductive carrier, and in the second step TA2, the upper conductive carrier is dechucked while the adsorption force moves to the lower part. This prevents the LED chips mLED from being separated from the top, and in the third step TA3 , the lower conductive carrier can adhere the LED chips uniformly while maintaining the horizontal correction of the LED chips while the adhesive layer is cured.
  • the pickup or separation method using the electrostatic carrier 210A is a device for accumulating charges similarly to that of a capacitor, in which two parallel metal plates 210B, Electrodes 1 and 2 are used.
  • the electrode plate to which the + electrode is applied becomes positively charged, and the electrode plate to which the - electrode is applied becomes to have a - charge.
  • electrostatic force is generated between the two parallel plates that are charged.
  • the electrostatic carrier 210A is a place where the substrate is placed inside the vacuum chamber.
  • the conductive elastic member 212 is disposed under the conductive carrier to protect the LED chip, while blocking the problem of residual charges affecting the LED chip.
  • each pixel region 2 of the circuit board 20 at least three LED chips 2A, 2B, and 2C emitting monochromatic light of red, green, and blue are arranged, and are applied from the outside. Lights of red, green, and blue colors are emitted from the LED chip by the signal to display an image.
  • a plurality of LED chips eg, blue LED chips
  • the plurality of LED chips 2A, 2B, and 2C may be mounted in a process separate from the TFT array process of the circuit board 20 . That is, the LED chips 2A, 2B, and 2C disposed on the circuit board 20 may be packaged and electrically connected through a process to be described later.
  • the boundary region P10 may be a region defined by a plurality of gate lines and data lines, and may be connected to the plurality of LED chips 2A, 2B, and 2C.
  • the thicknesses of the plurality of LED chips 2A, 2B, and 2C may be the same or the top surface height may be the same.
  • the top surface heights of different types of LED chips 2A, 2B, and 2C may be equalized by using the adhesive layer B10.
  • the resin member 151 molds the upper portion of the support member 1 .
  • the resin member 151 molds the first to third LED chips 2A, 2B, and 2C.
  • the resin member 151 may cover the surfaces of the LED chips 2A, 2B, and 2C and the pads 61 and 63 .
  • the resin member 151 may cover the surface of the TFT part.
  • the resin member 151 may include a material that absorbs, reflects, or blocks the light emitted through the LED chips 2A, 2B, and 2C.
  • the resin member 151 may prevent light leakage.
  • the resin member 151 may include at least one of a binder resin, a photopolymerization initiator, a black pigment, and a solvent.
  • the binder resin may include an epoxy resin, an acrylic resin, a polyimide resin, a panel resin, a silicone resin, or a car It may include a dog-based resin material.
  • the resin member 151 may be made of a resin-based or epoxy-based black material, and may include a light-blocking, reflective, or absorptive additive therein.
  • the resin member 151 may include a highly refractive inorganic spray, for example, TiO 2 sol, SrTiO 3 sol, ZnS, ZnSe, potassium bromide, AgCl, MgO, cesium iodide, cesium bromide, CaCO 3 , Phosphor.
  • a highly refractive inorganic spray for example, TiO 2 sol, SrTiO 3 sol, ZnS, ZnSe, potassium bromide, AgCl, MgO, cesium iodide, cesium bromide, CaCO 3 , Phosphor.
  • the resin member 151 may include a light absorbing material or a heat absorbing or heat dissipating material.
  • the outer surface of the resin member 151 may include a concave first recess R0, and the first recess R0 may include a concave curved surface and/or an inclined surface. That is, the surface of the first recess R0 may be formed so as not to be provided with an abruptly curved surface or a stepped surface.
  • the resin member 151 is disposed on top of the LED chips 2A, 2B, and 2C, on the sides of the LED chips 2A, 2B, and 2C, between adjacent LED chips 2A, 2B, and 2C, between the LED chips 2A, 2B. , 2C) and the pads 61 and 63 and between the electrodes K1 and K2, respectively.
  • the minimum distance between the LED chips 2A, 2B, and 2C and the pads 61 and 63 may be provided in a range of 2 ⁇ m or more, for example, 2 ⁇ m to 5 ⁇ m.
  • the electrodes K1, K2 and the pads 61 and 63 of the LED chips 2A, 2B, 2C are opened. do.
  • the opening process of the electrodes K1 and K2 and the pads 61 and 63 may be performed as a hard baking process through, for example, an exposure process using a mask, a developing process, and the like.
  • the electrodes K1 and K2 and the pads 61 and 63 may be exposed in the rear direction through the regions R1 , R2 , R3 , and R4 in which the resin member 151 is removed. As shown in (C) (D) of FIG.
  • a liquid conductive layer 160 is formed on the surface of the resin member 151 . do.
  • the conductive layer 160 may be formed on the upper surface of the resin member 151 , the electrodes K1 and K2 , and the upper surface of the pads 61 and 63 .
  • the conductive layer 160 may be formed by spraying the liquid conductive layer 160 over the entire upper surface of the resin member 151 and on the electrodes K1 and K2 and the pads 61 and 63.
  • the conductive layer 160 is covered with a single ink layer on the electrodes K1 and K2 and the pads 61 and 63 .
  • the conductive layer 160 may include a metal nano-powder and an adhesive binder.
  • the conductive layer 160 may include a photoinitiator, a metal nano-powder, and an adhesive binder.
  • the conductive layer 160 may include a graphene material, a metal nanopowder, an adhesive binder, and a photoinitiator.
  • the photoinitiator may be in the range of 10% by weight or less, for example, 0.01 to 10% by weight of the total weight of the ink composition.
  • the photoinitiator is a UV-sensitive material, and may be used by selectively combining three types of HP-8, TPO, and DETX.
  • the photoinitiator is 1-hydroxy-cyclohexyl-phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-1-propanone, 2-hydroxy-1-[4-(2-hydroxyethoxy) Phenyl]-2-methyl-1-propanone, methylbenzoylformate, ⁇ -dimethoxy- ⁇ -phenylacetophenone, 2-benzoyl-2-(dimethylamino)-1-[4-(4-morpholinyl) Phenyl]-1-butanone, 2-methyl-1-[4-(methyl thio)phenyl]-2-(4-morpholinyl)-1-propanone diphenyl (2,4,6-trimethylbenzoyl) -phosphine oxide, or bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, etc., but is not necessarily limited thereto.
  • the metal nanopowder may include at least one of Al, Si, Au, Ag, Pt, Cr, Mo, Ta, and Cu.
  • the metal nanopowder may have the highest proportion in the ink composition, for example, 50 wt% or more or may be in the range of 50 to 80 wt%.
  • the adhesive binder may include at least one of inorganic binders, for example, SiO 2 based, Na 2 O based, Al 2 O 3 based, Fe 2 O 3 based, and CaO based materials.
  • the adhesive binder may be in the range of 60% by weight or less, for example, 20 to 60% by weight of the total weight of the ink composition.
  • the graphene material may be in the range of 10% by weight or less, for example, 0.01 to 10% by weight.
  • the forming process of the conductive layer 160 may be formed by a wet method.
  • the conductive layer 160 may be formed by a sputtering process, but the sputtering process is more complicated than the wet process, and the thickness of the conductive layer may be thinner than the wet process.
  • a mask 170 may be disposed on the conductive layer 160 .
  • the opening OP1 of the mask 170 may be formed in a region overlapping the region to be removed. That is, the mask 170 may open an area excluding the area of the connection part.
  • a developing process is performed. At this time, as shown in FIGS. 15B (F) and 17 (A) (B), the developing process removes only the exposed region R5, and the unexposed region remains (FIG. 19B) ( see C)).
  • the connection part may connect the electrodes K1 and K2 of the LED chip and the pads 61 and 63 of the circuit board to each other. That is, the first connector 161 connects the first electrode K1 and the first pad 61 , and the second connector 162 connects the second electrode K2 and the second pad 63 .
  • the conductive layer on the resin member 151 covering each of the LED chips 2A, 2B, and 2C regions of the first and second connection parts 161 and 162 may remain separated from each other.
  • the passivation layer 155 may be formed thereon.
  • the passivation layer 155 may be formed on the upper surfaces of the first and second connection parts 161 and 162 and the exposed surface of the resin member 151 .
  • the passivation layer 155 may be a layer made of a material such as silicon or epoxy, or an insulating layer made of a heat dissipation material.
  • the resin member 151 may be adhered to the side surfaces of the LED chips 2A, 2B, and 2C, for example, the side surface of the light emitting structure 105 , the side surface of the light-transmitting substrate 101 , the electrode ( It can be attached to the side of K1, K2).
  • the resin member 151 may be adhered to the upper surfaces of the LED chips 2A, 2B, and 2C, and may be disposed higher than the upper surfaces of the electrodes K1 and K2.
  • the resin member 151 may be adhered to the protrusion B11 of the adhesive layer B10.
  • the adhesive layer B10 has a minimum thickness T1 of 1 ⁇ m or less, for example, 0.2 ⁇ m to 0.5 ⁇ m, and adheres the lower surfaces of the LED chips 2A, 2B, and 2C to the upper surface of the support member 1 , It can prevent the transmittance
  • the protrusion B11 is adhered to the side surface of the light-transmitting substrate 101 , and adhesion to the resin member 151 may be increased. Accordingly, the resin member 151 may be adhered to and supported around the LED chips 2A, 2B, and 2C to prevent flow.
  • a liquid photosensitive conductive layer 160 is formed on the entire surface of the resin member 151, and the connection part is exposed and developed through exposure and development.
  • the photosensitive conductive layer 160 may be made of a photosensitive conductive ink (PCI) material.
  • PCI photosensitive conductive ink
  • the process of forming the connection part using the PCI can be simplified to a heat treatment process after coating-exposure-developing without a photoresist (PR) process. If, compared to the sputtering process of forming the connection part, the process of coating the photoresist and removing it, the process of removing the remaining film of the photoresist, the metal etching process, etc. may be reduced.
  • the thickness of the connection parts 161 and 162 may be uniformly formed over the entire area and thicker than the sputtering method by performing a wet process.
  • the thickness of the connecting portions 161 and 162 may be formed in a thickness of 1.5 ⁇ m or more, for example, in the range of 1.5 to 5 ⁇ m. Accordingly, cracks in the connection portions 161 and 162 may be prevented, and a delamination phenomenon may be reduced. Also, the resistance at the connection portions 161 and 162 may be lowered to 50 m ⁇ or less.
  • the PCI process for example, has a high adhesion between ITO, which is a pad side material, and Au, which is an electrode side material, and can simplify the process through wet coating without a process of forming a separate bump.
  • the wet method may be formed by at least one of a spray coating method, a dip coating method, a spin coating method, or a printing method (eg, screen printing, inkjet printing).
  • a spray coating method e.g, a dip coating method, a spin coating method, or a printing method (eg, screen printing, inkjet printing).
  • connection part when forming the connection part in the same way as sputtering, the adhesive strength between ITO as the pad side material and Au as the electrode side material is low, so an adhesive layer such as Ti or TiW is further deposited, and then a connection layer such as Au or Cu is formed.
  • the thickness when forming a connection portion by a method such as sputtering, the thickness may be formed to be 1 ⁇ m or less, so that a peeling phenomenon or a crack may occur. As shown in FIG.
  • the connecting portions 161 and 162 in a wet manner, it is possible to reduce the phenomenon that liquid is drawn to an angled portion or a stepped portion on the surface of the resin member 151, and high resistance, heat generation, disconnection, etc. The problem can be eliminated.
  • the connecting portions 161 and 162 in a wet manner, the adhesive force and electrical characteristics between the connecting portions 161 and 162 and the resin member 151 may be improved.
  • the sputtering method is not excluded as a method of forming the connection part, and the above descriptions mean that the wet method may have improved technical characteristics compared to the sputter method.
  • the resin member 151 is sealed on the first to third LED chips 2A, 2B, and 2C, and the first electrode K1 of each LED chip 2A, 2B, and 2C and the TFT part are formed.
  • a first connection part 161 may be connected between the first pads 61
  • a second connection part 162 may be connected between the second electrode K2 and the second pad 63 of the TFT unit.
  • the first to third LED chips 2A, 2B, and 2C may be electrically connected to the TFT unit and selectively driven.
  • the first to third LED chips 2A, 2B, and 2C may emit light of different colors, for example, red, green, and blue light.
  • the first to third LED chips 2A, 2B, and 2C may emit light of the same color, for example, blue.
  • the emitted light may be emitted to the other surface through the transparent support member 1 .
  • the resin member 151 disposed around the LED chips 2A, 2B, and 2C absorbs or blocks the side exposure light, thereby increasing the visibility of the light.
  • the configuration of the circuit board 20 having the TFT and the plurality of LED chips 2A, 2B, and 2C disposed on the circuit board 20 may be defined as a light source module.
  • the circuit board 20 may include a TFT unit 50 connected to the LED chips 2A, 2B, and 2C.
  • the circuit board 20 may include a transparent support member 1 such as glass and a pad or line pattern thereon.
  • the TFT unit 50 may be disposed on one surface or an upper surface of the support member 1 .
  • the TFT unit 50 includes a gate electrode 51 , a semiconductor layer 53 , a source electrode 55 , and a drain electrode 57 .
  • a gate electrode 51 is formed on the circuit board 20 , a gate insulating layer 49 is formed over the entire area of the circuit board 110 to cover the gate electrode 51 , and a semiconductor layer 53 is formed with the gate It is formed on the insulating layer 49 , and a source electrode 55 and a drain electrode 57 are formed on the semiconductor layer 53 .
  • the gate electrode 51 may be formed of a metal such as Cr, Mo, Ta, Cu, Ti, Al, or an Al alloy or an alloy thereof, and the gate insulating layer 49 is made of an inorganic insulating material such as SiOx or SiNx. It may be made of a single layer made of or a plurality of layers made of SiOx and SiNx.
  • the semiconductor layer 53 may be formed of an amorphous semiconductor such as amorphous silicon, or an oxide semiconductor such as indium gallium zinc oxide (IGZO), TiO 2 , ZnO, WO 3 or SnO 2 .
  • IGZO indium gallium zinc oxide
  • TiO 2 , ZnO, WO 3 or SnO 2 oxide semiconductor
  • the semiconductor layer 53 is not limited to a specific material, and all kinds of semiconductor materials currently used in the TFT may be used.
  • the source electrode 55 and the drain electrode 57 may be formed of a metal such as Cr, Mo, Ta, Cu, Ti, Al, or an Al alloy or an alloy thereof.
  • the drain electrode 57 may be used as a first connection electrode for applying a signal to the LED chips 2A, 2B, and 2C.
  • the TFT unit 50 is a bottom gate type TFT in the drawing, the present invention is not limited to a TFT having a specific structure, and thin film transistors having various structures such as a top gate type TFT are used. could be applied.
  • a second connection electrode 59 is formed under the first insulating layer 41 .
  • the second connection electrode 59 may be formed of a metal such as Cr, Mo, Ta, Cu, Ti, Al or Al alloy or an alloy thereof, and the second connection electrode 59 (ie, the drain of the TFT). It may be formed by the same process as the electrode 57).
  • a first insulating layer 41 is formed on the circuit board 20 on which the TFT unit 50 is formed, and the LED chips 2A, 2B, and 2C are disposed in the opening of the first insulating layer 41 of the light emitting region. In this case, in the drawing, a portion of the first insulating layer 114 is removed and the LED chips 2A, 2B, and 2C may be arranged on the removed area.
  • the first insulating layer 41 may be composed of an organic layer such as a polyimide (PI) film or photoacrylic, or may have a multilayer structure such as an inorganic layer/organic layer or an inorganic layer/organic layer/inorganic layer.
  • First and second pads 61 and 63 may be disposed in the area where the first insulating layer 41 is opened.
  • the first pad 61 may be disposed on the first connection electrode 57 or may be a part of the material of the first connection electrode 57 .
  • the second pad 63 may be disposed on the second connection electrode 59 or may be a part of the second connection electrode 59 .
  • Both ends P2 and P4 of the first connection part 161 are connected to the first electrode K1 of each LED chip 2A, 2B, and 2C and the first pad 61 of the TFT part, and the second electrode K2 Both ends P1 and P3 of the second connection unit 162 may be connected to the second pad 63 of the TFT unit.
  • the first and second connection electrodes 57 and 59 may be formed on the upper surface of the support member 1 .
  • the resin member 151 and the adhesive layer B10 may be disposed in a region from which the gate insulating layer 49 formed on the upper surface of the support member 1 is removed.
  • the gate insulating layer 49 may extend on the lower surface of the resin member 151 and the adhesive layer B10 .
  • the first and second pads 61 and 63 may include at least two or more of Ti, Ni, Pt, TiN, Mo, Al, W, Cu, Ag, and Au.
  • the first and second pads 61 and 63 may be formed in multiple layers. Thereafter, when the LED chips for each color are mounted on the display panel, a cleaning process may be performed, and an abnormal portion such as flux may be removed through the cleaning process. At least one or both of the resin member 151 and the passivation layer 155 may be further extended on the surface of the TFT unit 50 to protect the surface of the TFT unit 50 .
  • a plurality of LED chips 2A, 2B, and 2C are disposed on a transparent support member 1 of a circuit board, molded with a resin member 151 , and electrically connected with connection parts 161 and 162 , , the surface may be protected by the passivation layer 155 .
  • the other surface (or lower surface) of the transparent support member 1 may be a surface from which light emitted through the LED chips 2A, 2B, and 2C is emitted.
  • the transparent cover 1A may be disposed on the other surface (or lower surface) of the support member 1 .
  • the transparent cover 1A may include at least one of a plastic material, a glass material, a ceramic material, and a transparent insulating film.
  • the transparent cover 1A may be made of a transparent flexible material or a non-ductile material.
  • the transparent cover 1A may be attached to the other surface of the support member 1 with an adhesive layer 1B.
  • the transparent cover 1A may be made of the same material as the support member 1 .
  • the transparent cover 1A may have the same thickness as the support member 1 or have a difference of ⁇ 30 ⁇ m from the thickness of the support member 1, and may be coupled to a display device or a panel.
  • the adhesive layer 1B may be disposed between the transparent cover 1A and the other surface of the support member 1 .
  • the adhesive layer 1B may be made of a transparent inorganic oxide-based material, and may be formed of, for example, a transparent mold or an optically clear resin. Discoloration of the adhesive layer 1B due to the light C1, C2, and C3 may be reduced.
  • the adhesive layer 1B may include an adhesive material, a heat dissipation material having thermally conductive nanopowder, and/or a scattering prevention material.
  • the adhesive layer 1B may include a thermally conductive inorganic filler, a carbon material, or a ceramic material.
  • the adhesive layer 1B is another material, and may be a transparent material of an organic or inorganic material.
  • the thickness of the adhesive layer 1B may be 60 ⁇ m or less, for example, in the range of 2 ⁇ m to 60 ⁇ m.
  • the adhesive layer 1B may be provided with a uniform thickness in the entire area.
  • the transmittance of the adhesive layer 1B may be 90% or more, for example, 95% or more.
  • the adhesive layer 1B may include an oxide material having at least one of Ag, Ti, Al, and Mo.
  • the adhesive layer 1B may include a multilayer structure, for example, a multilayer oxide structure such as Ti/Al/Ti or Mo/Al/Mo.
  • the light blocking layer M1 may be disposed between the transparent support member 1 and the transparent cover 1A.
  • the light blocking layer M1 may be adhered between the lower surface of the transparent support member 1 and the upper surface of the transparent cover 1A.
  • the light blocking layer M1 may be disposed between the adhesive layer 1B and the lower surface of the support member 1 .
  • the light blocking layer M1 may be disposed between the adhesive layer 1B and the upper surface of the transparent cover 1A.
  • the light-blocking layer M1 may be made of a resin-based black material, and may include at least one of a light-blocking, reflective, and absorptive additive therein.
  • the light blocking layer M1 may include a high refractive inorganic spray, for example, TiO 2 sol, SrTiO 3 sol, ZnS, ZnSe, potassium bromide, MgO, cesium iodide, cesium bromide, CaCO 3 , phosphorus tree. Bromide, phenyltrichloride, trichroman-4-one, thionyl bromide, ZnO 2 , CeO 2 , ITO sol, Ta 2 O 5 , Ti 2 O 5 , Ti 2 O 3 , ZrO 2 , Br 2 , CS 2 , ZrO 2 -TiO 2 sol, and SiO 2 -Fe 2 O 3 It may include at least one selected from the group consisting of compounds.
  • a high refractive inorganic spray for example, TiO 2 sol, SrTiO 3 sol, ZnS, ZnSe, potassium bromide, MgO, cesium iodide, cesium bromide, CaCO
  • the light blocking layer M1 may include a light absorbing material or a heat absorbing or heat dissipating material.
  • the light blocking layer M1 may have a thickness capable of blocking or absorbing light, and may be, for example, 30 ⁇ m or less or a range of 3 ⁇ m to 30 ⁇ m.
  • the light-blocking layer M1 may perform a heat dissipation function by the above-described thickness and additives.
  • the light blocking layer M1 may include a plurality of openings Ma, Mb, and Mc. Each of the openings Ma, Mb, and Mc may face each of the LED chips 2A, 2B, and 2C.
  • the plurality of openings Ma, Mb, and Mc may be spaced apart from each other, and an interval between the openings Ma, Mb, and Mc may be the same as an interval between adjacent LED chips.
  • a width W2 or a length of each of the openings Ma, Mb, and Mc may be greater than a width or length of the LED chip facing each of the openings Ma, Mb, and Mc. That is, the openings Ma, Mb, and Mc may be emission regions from which the light C1, C2, and C3 emitted from the LED chips 2A, 2B, and 2C are emitted.
  • a portion of the adhesive layer 1B may be formed in the openings Ma, Mb, and Mc of the light blocking layer M1.
  • the minimum thickness of the adhesive layer 1B is the thickness between the light blocking layer M1 and the transparent cover 1A, and may be formed to be 30 ⁇ m or less, and the maximum thickness is at the openings Ma, Mb, Mc. As a thickness of, it may be in the range of 0.1 ⁇ m to 60 ⁇ m.
  • Lights of each LED chip 2A, 2B, and 2C are emitted through the openings Ma, Mb, and Mc of the light blocking layer M1, and lights of different colors are emitted through the lower surface of the transparent cover 1A. can By controlling the driving of these LED chips, display control can be performed.
  • the process of forming the cover 1A, the adhesive layer 1B, and the light-blocking layer M1 under the support member 1 may be performed after forming the connection part or after forming the passivation layer.
  • the process of attaching the LED chips may be performed after forming the above configuration in advance on the lower portion of the support member 1 .
  • FIG. 23 is another example of the display panel of FIG. 22, including phosphor layers PS1 and PS2, a light blocking layer M1, an adhesive layer 1B, and a transparent cover 1A under the support member 1 can
  • the phosphor layers PS1 and PS2 may be disposed in at least two areas of the openings Ma, Mb, and Mb of the light blocking layer M1, and may be disposed between the transparent cover 1A and the lower surface of the support member 1 .
  • the phosphor layers PS1 and PS2 may be disposed between the adhesive layer 1B and the lower surface of the support member 1 .
  • the phosphor layers PS1 and PS2 may be disposed inside the openings Ma and Mb, or may be disposed on upper and/or lower surfaces of the openings Ma and Mb.
  • the phosphor layers PS1 and PS2 may be adhered to a lower surface of the support member 1 and/or an upper surface of the transparent cover 1A.
  • the phosphor layers PS1 and PS2 include a first phosphor layer PS1 in an area facing the first LED chip 2A, and a second phosphor layer PS2 in an area facing the second LED chip 2B. ) may be included. A portion of the transparent adhesive layer 1B may be formed in a region facing the third LED chip 2C.
  • the first phosphor layer PS1 may be disposed in the first opening Ma of the light blocking layer M1
  • the second phosphor layer PS2 may be disposed in the second opening Mb of the light blocking layer M1 .
  • the LED chip 2C emitting the same color emits blue light for example, the first phosphor layer PS1 converts blue light to emit red light, and the second phosphor layer PS2 emits blue light.
  • the wavelength of light By converting the wavelength of light, green light may be emitted. Accordingly, red, green, and blue light may be emitted through the first to third openings Ma, Mb, and Mc.
  • a blue phosphor layer may be further disposed in the third opening Mc.
  • the wavelength may be converted to another color using a phosphor layer to emit light. Accordingly, a pixel area emitting at least three colors or multi-color light of three or more colors may be implemented in the display panel or device, respectively.
  • the LED chip 2C emits the same color, the entire LED chip can be attached to the surface of the support member 1 at least once, so that the process can be simplified.
  • the unit pixel may be implemented in R/G/B like red, green, and blue light, or R/G/B/W (white) as sub-pixels, but the present invention is not limited thereto.
  • 24 to 28 are modified examples of the display panel of FIG. 23 .
  • the first phosphor layer PS1 may be disposed between the transparent adhesive layer B10 facing the first opening Ma and the transparent support member 1 .
  • the first phosphor layer PS1 may be in contact with the resin member 151 under the LED chip 2C on the first opening Ma.
  • the width or upper surface area of the first phosphor layer PS1 positioned on the first opening Ma may be smaller than the width or lower surface area of the adhesive layer B10 attached to the LED chip 2C.
  • the second phosphor layer PS2 may be disposed between the transparent adhesive layer B10 facing the second opening Mb and the transparent support member 1 .
  • the second phosphor layer PS2 may be in contact with the resin member 151 under the LED chip 2C positioned on the second opening Mb.
  • the width or upper surface area of the first phosphor layer PS2 positioned on the second opening Mb may be smaller than the width or lower surface area of the adhesive layer B10 bonded to the LED chip 2C on the second opening Mb.
  • the LED chip 2C positioned on the third opening Mc may be adhered to the support member 1 with an adhesive layer B10 .
  • a portion of the adhesive layer 1B may be disposed in each of the openings Ma, Mb, and Mc of the light blocking layer M1.
  • the first and second phosphor layers PS1 and PS2 may be respectively adhered between the adhesive layer 1B and the transparent cover 1A.
  • Each of the first and second phosphor layers PS1 and PS2 corresponds to the first and second openings Ma and Mb of the light blocking layer M1, and the widths of the first and second openings Ma and Mb or It may be provided with a width or an area greater than the area. Accordingly, it is possible to block light leakage to the outside of the phosphor layers PS1 and PS2 to which the adhesive layer 1B is adhered.
  • the first and second phosphor layers PS1 and PS2 may be respectively adhered between the adhesive layer 1B and the transparent support member 1 .
  • the light blocking layer M1 may be disposed between the adhesive layer 1B and the transparent cover 1A.
  • Each of the first and second phosphor layers PS1 and PS2 may be spaced apart from the upper portions of the first and second openings Ma and Mb of the light blocking layer M1, or may partially contact the light blocking layer M1. .
  • Each of the first and second phosphor layers PS1 and PS2 may have a width or area greater than that of the first and second openings Ma and Mb. Accordingly, it is possible to block light leakage through the outside and the openings Ma and Mb of the phosphor layers PS1 and PS2 to which the adhesive layer 1B is attached.
  • a light blocking layer M1 having an adhesive layer 1B/openings Ma, Mb, Mc) is disposed on the lower surface of the transparent support member 1, and a transparent cover is provided under the light blocking layer M1.
  • (1A) can be combined.
  • the openings Ma, Mb, and Mc may be disposed in regions corresponding to the respective LED chips 1C on the upper surface of the transparent cover 1A.
  • a first phosphor layer PS1 may be disposed in the first opening Ma, and a second phosphor layer PS2 may be disposed in the second opening Mb.
  • a portion of the adhesive layer 1B may extend to the third opening Mc to be adhered to the transparent cover 1A. As shown in FIG.
  • the transparent support member 1 and the transparent cover 1A may be adhered to each other with the light blocking layer M1 without an adhesive layer.
  • the light-blocking layer M1 may have a double-sided adhesive function or may be adhered by pressing.
  • the light blocking layer M1 has a plurality of openings Ma, Mb, Mc corresponding to each LED chip 2C, and the first phosphor layer PS1 is disposed in the first opening Ma, and the second opening A second phosphor layer PS2 may be disposed in (Mb).
  • a transparent resin part M5 may be disposed in the second opening Mc to transmit light.
  • the light blocking layer M1 having the openings Ma, Mb, Mc and the phosphor layers PS1 and PS2 are disposed between the transparent support member 1 and the transparent cover 1A, and through selective wavelength conversion Lights necessary for the pixel area may be emitted.
  • the transparent support member 1 is coated with the light blocking layer M1 and the phosphor layers PS1 and PS2, if the TFT substrate has poor coating, the unit cost of failure may be high. Accordingly, when the phosphor layers PS1 and PS2 and the light blocking layer M1 are formed on the transparent cover 1A, and a coating defect occurs, only the transparent cover can be replaced. In addition, since the transparent cover can be replaced or reworked, it can be economical.
  • a lens array Rn may be included on the lower surface of the transparent cover 1A.
  • Each lens shape of the lens array Rn may be formed in a convex hemispherical shape, and a plurality of lenses may be arranged on the lower surface of each of the LED chips 2A, 2B, and 2C and/or the lower surface of the phosphor layer.
  • Each lens of the lens array Rn has a width w1 and/or a height h1 of nanometer size, and may be formed to be 500 nm or less, for example, 100 nm to 500 nm. The width w1 or height h1 of each lens may be the same or different.
  • the lens array Rn of the transparent cover 1A may increase the transmittance of incident light and may increase light sensitivity and light efficiency.
  • the lens array Rn of the transparent cover 1A may be formed on the entire lower surface, thereby providing an anti-reflective function and a sun blocking function.
  • FIG. 36 when the lower surface of the transparent cover 1A is a flat surface and when a lens is formed, it is a graph comparing transmittance for each wavelength according to the lens size. As shown in this graph, it can be seen that, in the case of the nano size, the light transmittance is 95% or more.
  • the lens array Rn of the transparent cover 1A may provide different lens sizes in the area corresponding to the lower surface of each LED chip, thereby further increasing the transmittance.
  • the lens array Rn may be formed through a wet etching process.
  • the metal layer 192 and the insulating member 194 are formed in the boundary region P10 between the LED chips 2A, 2B, and 2C, and then the insulating member A part of 194 is opened to form a conductive portion 196 .
  • the conductive part 196 may include an anisotropic conductive film (ACF), and the conductive part 196 may be connected to the driving substrate 190 .
  • the driving substrate 190 may be selectively connected to each of the LED chips 2A, 2B, and 2C and the TFT unit 50 in FIG. 21 , and may be connected to a component such as a driver IC.
  • a plurality of the conductive parts 196 may be spaced apart from each other, and may be connected to other wirings or patterns through the contact parts 192 .
  • the insulating part 194 may be a layer of a light blocking material, a reflective material, or an absorbing material.
  • the driving board 190 may include a PCB or FPCB made of a resin material.
  • a heat dissipation member is further disposed on the upper portion of the support member 1 to effectively dissipate heat.
  • the process of forming the connection part does not proceed after forming the resin member 151, but after forming the insulating part 194, the connection part, the contact part 192, and the connection parts 161 and 162 for the driving board in one process. ) can be formed.
  • At least one of the passivation layer 155 and the resin member 151 may include an extension portion E10 extending to the upper surface adjacent to the side surface Sc of the support member 1 (E10). have. Accordingly, the extension portion E10 may protect the edge pattern 31 .
  • a side coating layer C11 may be formed by a laser cutting process, and the side coating layer C11 may extend the extension. It may be in contact with the portion E10.
  • the distance D11 from the edge pattern 31 to the side surface Sc may be 15 ⁇ m or less, for example, in the range of 0.5 ⁇ m to 15 ⁇ m, so that the edge pattern 31 is passed through the extension part E10. can protect
  • the dummy area A portion of the areas A11 , A12 , and A13 may be opened, and packaging and electrical connection processes may be performed as described above to replace a defective LED chip with a new (NEW) LED chip 2D.
  • This replacement process may be a third defective LED chip inspection and replacement process. After the defective LED chip is removed, the wiring process may form a partial connection part through the wet process using the conductive ink disclosed above.
  • each pixel region 2 has a pair of first to third LED chips 2A, 2B, and 2C, and is divided into pixel boundary regions P11 through the lower portion of the support member 1 .
  • Light L1 may be emitted.
  • a group of two pairs of first to third LED chips 2A, 2B, and 2C or dummy LED chip areas (ie, dummy pads) 22 may be further disposed in each pixel area 2 , as shown in FIG. 36 . have.

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Abstract

Un écran d'affichage décrit dans un mode de réalisation de l'invention comprend : une unité de transistor à couches minces (TFT) disposée sur une surface supérieure d'un élément de support transparent et ayant des tampons ; une pluralité de puces de DEL disposées sur la surface supérieure de l'élément de support et ayant des électrodes sur une partie supérieure de celui-ci ; une couche adhésive transparente liant chacune de la pluralité de puces de DEL à la surface supérieure de l'élément de support ; un élément en résine recouvrant la pluralité de puces de DEL ; une pluralité de parties de connexion disposées sur l'élément en résine et reliant respectivement les électrodes et les pastilles ; et une couche de blocage de lumière ayant une pluralité d'ouvertures, dont les zones faisant face aux puces de DEL sont respectivement ouvertes, sur une surface inférieure de l'élément de support, la lumière émise par chacune des puces de DEL pouvant être émise vers chacune des ouvertures à travers l'élément de support.
PCT/KR2020/019421 2019-12-31 2020-12-30 Écran d'affichage, dispositif d'affichage et procédé de fabrication associé WO2021137625A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2019-0179605 2019-12-31
KR1020190179605A KR102306773B1 (ko) 2019-12-31 2019-12-31 광원 모듈, 디스플레이 패널 및 그 제조방법
KR1020200008737A KR20210094907A (ko) 2020-01-22 2020-01-22 디스플레이 패널, 디스플레이 장치 및 그 제조방법
KR10-2020-0008737 2020-01-22

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CN114171483A (zh) * 2021-11-24 2022-03-11 武汉新芯集成电路制造有限公司 半导体结构及半导体器件
WO2023020476A1 (fr) * 2021-08-19 2023-02-23 深圳市晶泓科技有限公司 Écran d'affichage à del transparent

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KR20180022683A (ko) * 2015-07-23 2018-03-06 서울반도체 주식회사 디스플레이 장치 및 그의 제조 방법
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KR101953645B1 (ko) * 2018-12-19 2019-03-04 (주)에스티아이 Led 기판 리페어 장비 및 방법
KR20190116198A (ko) * 2019-09-24 2019-10-14 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023020476A1 (fr) * 2021-08-19 2023-02-23 深圳市晶泓科技有限公司 Écran d'affichage à del transparent
CN114171483A (zh) * 2021-11-24 2022-03-11 武汉新芯集成电路制造有限公司 半导体结构及半导体器件

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