WO2021134490A1 - Mass transfer system and method for light-emitting diode - Google Patents

Mass transfer system and method for light-emitting diode Download PDF

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Publication number
WO2021134490A1
WO2021134490A1 PCT/CN2019/130532 CN2019130532W WO2021134490A1 WO 2021134490 A1 WO2021134490 A1 WO 2021134490A1 CN 2019130532 W CN2019130532 W CN 2019130532W WO 2021134490 A1 WO2021134490 A1 WO 2021134490A1
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WO
WIPO (PCT)
Prior art keywords
light
mass transfer
emitting diode
emitting diodes
substrate
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PCT/CN2019/130532
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French (fr)
Chinese (zh)
Inventor
许时渊
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重庆康佳光电技术研究院有限公司
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Priority to CN201980004138.XA priority Critical patent/CN113348541B/en
Priority to PCT/CN2019/130532 priority patent/WO2021134490A1/en
Publication of WO2021134490A1 publication Critical patent/WO2021134490A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to the technical field of micro-light emitting diodes (Micro-LED), in particular to a mass transfer system and a mass transfer method of light emitting diodes.
  • Micro-LED micro-light emitting diodes
  • Miniature light-emitting diodes have good stability, longevity, and advantages in operating temperature. At the same time, miniature light-emitting diodes also inherit the advantages of light-emitting diodes such as low power consumption, high color saturation, fast response speed, and strong contrast. Therefore, miniature light-emitting diodes have great application prospects, such as miniature light-emitting diode display screens.
  • the light-emitting diode on the original substrate needs to be transferred and fixed to the display backplane.
  • the traditional mass transfer method is to heat and melt the metal solder on the backplane of the display screen, and then use the transfer substrate to press the light-emitting diodes to bond the light-emitting diodes with the metal solder to fix the light-emitting diodes on the backplane of the display screen.
  • it is difficult to control the pressure of the transfer substrate during the pressurization process it is easy to cause cracks and damages of the light-emitting diodes.
  • the light-emitting diodes are usually fixed on the transfer substrate with a complex weakening structure of the light-emitting diodes.
  • the manufacturing process of the light-emitting diode weakened structure is very difficult, which greatly affects the manufacturing efficiency of the light-emitting diode display screen.
  • the invention provides a mass transfer system of light-emitting diodes, which can effectively avoid the phenomenon of cracking and damage of the light-emitting diodes during the transfer process, and at the same time can improve the manufacturing efficiency of the light-emitting diode display screens.
  • an embodiment of the present invention provides a mass transfer system for light-emitting diodes, and the mass transfer system includes:
  • a transfer device for grabbing the light-emitting diode to the display backplane
  • the magnetic device has a magnetic field for attracting the light-emitting diode, and the light-emitting diode is selectively adsorbed from the transfer device to the display back plate under the action of the magnetic field.
  • an embodiment of the present invention provides a mass transfer method for light emitting diodes.
  • the mass transfer method is applied to a mass transfer system for light emitting diodes.
  • the mass transfer system includes a transfer device and a magnetic device.
  • Mass transfer methods include:
  • the magnetic field of the magnetic device is used to attract the light-emitting diode to selectively adsorb the light-emitting diode from the transfer device to the display backplane.
  • the mass transfer system and mass transfer method for light-emitting diodes described above utilize the characteristics of the energized solenoid to generate a magnetic field.
  • the light-emitting diode is transferred to the display backplane, the light-emitting diode is directly absorbed from the transfer device to the display backplane, It effectively avoids the phenomenon that the light-emitting diode is broken or damaged due to pressure and other problems during the transfer process, and at the same time, the manufacturing efficiency of the light-emitting diode display screen is improved.
  • Fig. 1 is a schematic diagram of a mass transfer system provided by the first embodiment of the present invention.
  • Fig. 2 is a schematic diagram of a mass transfer system provided by a second embodiment of the present invention.
  • Fig. 3 is a schematic diagram of a mass transfer system provided by a third embodiment of the present invention.
  • Fig. 4 is a schematic diagram of a mass transfer system provided by a fourth embodiment of the present invention.
  • Fig. 5 is a flow chart of mass transfer provided by an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the mass transfer process in the first specific embodiment provided by the first embodiment of the present invention.
  • FIG. 7 is a schematic diagram of the mass transfer process in the second specific embodiment provided by the first embodiment of the present invention.
  • FIG. 8 is a sub-flow chart of the first specific embodiment mass transfer provided by the first embodiment of the present invention.
  • FIG. 9 is a sub-flow chart of mass transfer in the second specific embodiment provided by the first embodiment of the present invention.
  • FIG. 10 is a schematic diagram of the mass transfer sub-process of the first specific embodiment provided by the first embodiment of the present invention.
  • FIG. 11 is a schematic diagram of the mass transfer sub-process in the second specific embodiment provided by the first embodiment of the present invention.
  • FIG. 12 is a schematic diagram of the mass transfer process provided by the second embodiment of the present invention.
  • FIG. 13 is a schematic diagram of the mass transfer process provided by the third embodiment of the present invention.
  • FIG. 14 is a schematic diagram of the mass transfer process provided by the fourth embodiment of the present invention.
  • FIG. 15 is a flowchart of the sub-process of mass transfer provided by the fifth embodiment of the present invention.
  • FIG. 16 is a schematic diagram of the mass transfer sub-process provided by the fifth embodiment of the present invention.
  • FIG. 1 is a schematic diagram of the mass transfer system provided by the first embodiment of the present invention.
  • the mass transfer system 1000 is used to transfer the light emitting diode 10 to the display backplane 50.
  • the light emitting diode 10 includes a first end surface 101 facing the transfer device 40 and a second end surface 102 disposed opposite to the first end surface. The second end surface 102 is combined with the display backplane 50.
  • the light emitting diode 10 has magnetism.
  • the electrode 11 of the light-emitting diode 10 can be made of a magnetic material such as gold, silver, copper, iron, cobalt, nickel, aluminum, titanium, molybdenum, chromium, and zinc.
  • the electrode 11 of the light emitting diode 10 may also be vapor-deposited or doped with magnetic materials, so that the electrode 11 has stronger magnetic properties.
  • the mass transfer system 1000 includes a transfer device 40 and a magnetic device 60.
  • the transfer device 40 includes a transfer substrate 42 and a first adhesive layer 41 coated on the transfer substrate 42.
  • the transfer device 40 grabs the light-emitting diode 10 through the first adhesive layer 41 and transfers it to the top of the display back plate 50, and the second end surface 102 of the light-emitting diode 10 faces the display back plate 50.
  • the first adhesive layer 41 is a pyrolysis glue, and the viscosity of the pyrolysis glue decreases with the increase of temperature.
  • the magnetic device 60 includes a controller 62 and a plurality of solenoids 61 arranged at intervals.
  • the solenoid 61 corresponds to the fixed point 501 provided on the display back plate 50 in a one-to-one correspondence. Both ends of the solenoid 61 are electrically connected to the controller 62 at the bottom of the magnetic device 60 through wires (not shown in the figure).
  • the solenoid 61 is energized or de-energized by the controller 62.
  • Each solenoid 61 generates a magnetic field when it is energized, and the magnetic field can attract the light-emitting diode 10.
  • the light emitting diode 10 is attracted from the transfer device 40 to the display back plate 50 under the action of a magnetic field.
  • each solenoid 61 is covered with a diamagnetic sleeve 611, and the diamagnetic sleeve 611 can prevent the magnetic fields generated by the solenoids 61 from interfering with each other after being energized.
  • a heating platform 70 is provided between the display back plate 50 and the magnetic device 60.
  • the heating platform 70 is attached to the display back plate 50, and the heating platform 70 is used to heat the fixed points 501 provided on the display back plate 50.
  • the fixing point 501 becomes molten after being heated, and is used to fix the light-emitting diode 10 to the display back plate 50.
  • the fixed point 501 is metal solder, and the metal solder includes tin, indium, and the like.
  • FIG. 2 is a schematic diagram of the mass transfer system provided by the second embodiment of the present invention.
  • each solenoid 61 includes a switch 610, and the switch 610 is used to control the corresponding solenoid.
  • the tube 61 is electrically connected to the power supply 62.
  • the magnetic field generated by the energized solenoid 61 can attract the light-emitting diode 10.
  • the light emitting diode 10 is selectively adsorbed from the transfer device 40 to the display back plate 50 under the action of a magnetic field.
  • the other structures of the mass transfer system 2000 are basically the same as those of the mass transfer system 1000, and will not be repeated here.
  • FIG. 3 is a schematic diagram of the mass transfer system provided by the third embodiment of the present invention.
  • the difference between the mass transfer system 3000 provided by the third embodiment and the mass transfer system 2000 provided by the second embodiment is that the transfer substrate 42 is provided with a plurality of protrusions 420 at intervals, and the protrusions 420 are different from those provided on the display backplane.
  • the fixed points 501 of 50 correspond one-to-one.
  • the first adhesive layer 41 is coated on the plurality of protrusions 420.
  • the light emitting diode 10 is pasted to the bump 420 through the first adhesive layer 41.
  • the other structures of the mass transfer system 3000 are basically the same as those of the mass transfer system 2000, and will not be repeated here.
  • FIG. 4 is a schematic diagram of the mass transfer system provided by the fourth embodiment of the present invention.
  • the magnetic device 60 includes a plurality of magnets 63 arranged at intervals, and the magnets 63 are different from those provided on the display backplane.
  • the fixed points 501 of 50 correspond one-to-one.
  • the outer side of each magnet 63 is covered with a diamagnetic sleeve 631, and the diamagnetic sleeve 631 can prevent the magnetic fields generated by the magnets 63 from interfering with each other.
  • the magnetic field generated by the magnet 63 can attract the light emitting diode 10.
  • the light emitting diode 10 is attracted from the transfer device 40 to the display back plate 50 under the action of a magnetic field.
  • the other structures of the mass transfer system 4000 are basically the same as those of the mass transfer system 3000, and will not be repeated here.
  • FIG. 5 and FIG. 6 are schematic diagrams of the mass transfer of the first specific embodiment provided by the first embodiment of the present invention.
  • the light-emitting diode 10 is a flip-chip type, that is, the two electrodes 11 of the light-emitting diode 10 are both located on the second end surface 102 of the light-emitting diode 10.
  • the light-emitting diodes 10 captured by the transfer device 40 through the first adhesive layer 41 coated on the transfer substrate 42 are pasted on the transfer substrate 42 at intervals, and the steps of transferring the light-emitting diodes 10 to the display backplane 50 specifically include:
  • step S101 the light-emitting diode 10 is one-to-one corresponding to the fixed point 501 of the light-emitting diode 10 to be mounted on the display backplane 50 by using the transfer device 40. Specifically, move the transfer device 40 to above the display backplane 50, so that the light-emitting diodes 10 pasted on the transfer substrate 42 correspond one-to-one with the fixed points 501 of the light-emitting diodes 10 to be mounted on the display backplane 50;
  • step S103 the light emitting diode 10 is attracted by the magnetic field of the magnetic device 60.
  • the controller 62 is used to energize the solenoid 61 so that the energized solenoid 61 generates a magnetic field to attract the light-emitting diode 10 from the transfer device 40 to the display back panel 50.
  • the transfer device 40 is heated by the heater 80.
  • the heater 80 is placed on the side of the transfer device 40 away from the light emitting diode 10. The heater 80 heats the transfer device 40 to increase the temperature of the first adhesive layer 41.
  • the viscosity of the first adhesive layer 41 is reduced, so that the viscosity of the first adhesive layer 41 to the light-emitting diode 10 is less than the attraction force of the energized solenoid 61 to the light-emitting diode 10, and the light-emitting diode 10 is adsorbed to the display back panel 50.
  • the adsorbed light-emitting diode 10 is placed at the fixed point 501, and the two electrodes 11 of the light-emitting diode 10 are in contact with the fixed point 501;
  • Step S105 using the heating platform 70 to heat the display back plate 50 to melt the fixed point 501.
  • the fixed point 501 after heating and melting is combined with the two electrodes 11 of the light-emitting diode 10 to fix the light-emitting diode 10 on the display back plate 50.
  • FIG. 5 and FIG. 7 are schematic diagrams of the mass transfer of the second specific embodiment provided by the first embodiment of the present invention.
  • the difference between the mass transfer process provided by the second embodiment and the mass transfer process provided by the first embodiment is that the light-emitting diode 10 is vertical, that is, the two electrodes 11 of the light-emitting diode 10 are located on the side of the light-emitting diode 10, respectively.
  • the light emitting diode 10 is adsorbed to the display backplane 50 and placed at the fixed point 501, and the electrode 11 on the second end surface 102 of the light emitting diode 10 is in contact with the fixed point 501.
  • the fixed point 501 after heating and melting is combined with the electrode 11 of the second end surface 102 of the light-emitting diode 10 to fix the light-emitting diode 10 to the display back plate 50.
  • the other processes of the mass transfer provided in the second specific embodiment are basically the same as the process of mass transfer provided in the first specific embodiment, and will not be repeated here.
  • the magnetic light-emitting diode 10 is directly adsorbed to the display back panel 50 from the transfer device 40 This effectively avoids the phenomenon that the light-emitting diode 10 is broken or damaged due to pressure and other problems during the transfer process.
  • the first adhesive layer 41 is made of pyrolytic glue, its viscosity decreases after being heated, so it is only necessary to apply a small current to the solenoid 61 to adsorb the light-emitting diode 10 to the display backplane 50.
  • the method of using the first adhesive layer 41 to fix the light-emitting diode 10 on the transfer substrate 42 avoids the traditional complex weakening structure and improves the manufacturing efficiency of the light-emitting diode display screen.
  • FIG. 12 is a schematic diagram of the mass transfer process provided by the second embodiment of the present invention.
  • the mass transfer process provided by the second embodiment is different from the mass transfer process provided by the first embodiment in that each solenoid 61 includes a switch 610, and the switch 610 is used to control the corresponding solenoid 61 and The electrical connection of the power supply 62.
  • the solenoid 61 is energized by the controller 62, the electric connection between the solenoid 61 and the controller 62 is controlled by the switch 610, and the magnetic field generated by the energized solenoid 61 can attract the light-emitting diode 10.
  • the light emitting diode 10 to be transferred is selectively adsorbed from the transfer device 40 to the display back plate 50 under the action of a magnetic field.
  • the other processes of the mass transfer provided in the second embodiment are basically the same as the process of mass transfer provided in the first embodiment, and will not be repeated here.
  • each solenoid 61 is provided with a switch 610, so that each solenoid 61 can be independently energized or de-energized, and the light-emitting diode 10 can be selectively attracted to the display backplane 50, thereby achieving Selective mass transfer.
  • FIG. 13 is a schematic diagram of the mass transfer process provided by the third embodiment of the present invention.
  • the mass transfer process provided by the third embodiment is different from the mass transfer process provided by the second embodiment in that a plurality of protrusions 420 are arranged at intervals on the transfer substrate 42, and the protrusions 420 are fixed on the display backplane 50.
  • the points 501 correspond one to one.
  • the first adhesive layer 41 is coated on the plurality of protrusions 420.
  • the transfer device 40 is attached to the transfer substrate 42 at intervals by the light emitting diodes 10 grabbed by the first adhesive layer 41 coated on the protrusion 420.
  • the other processes of the mass transfer provided in the third embodiment are basically the same as the process of the mass transfer provided in the second embodiment, and will not be repeated here.
  • a plurality of protrusions 420 are provided on the transfer substrate 42 so that when the light-emitting diode 10 is transferred to the display backplane 50, the light-emitting diode 10 can be accurately aligned with the position to be transferred on the display backplane 50. At the same time, it also avoids the displacement of other unabsorbed light-emitting diodes 10 during the process of selectively attracting the light-emitting diodes 10 by the magnetic device 60.
  • FIG. 14 is a schematic diagram of the mass transfer process provided by the fourth embodiment of the present invention.
  • the mass transfer process provided by the fourth embodiment is different from the mass transfer process provided by the third embodiment in that the magnetic device 60 includes a plurality of magnets 63 arranged at intervals, and the magnets 63 are fixed on the display back plate 50.
  • the points 501 correspond one to one.
  • the outer side of each magnet 63 is covered with a diamagnetic sleeve 631, and the diamagnetic sleeve 631 can prevent the magnetic fields generated by the magnets 63 from interfering with each other.
  • the magnetic field generated by the magnet 63 can attract the light emitting diode 10.
  • the light emitting diode 10 is attracted from the transfer device 40 to the display back plate 50 under the action of a magnetic field.
  • the other processes of the mass transfer provided by the fourth embodiment are basically the same as the process of the mass transfer provided by the third embodiment, and will not be repeated here.
  • FIG. 8 and FIG. 10 are schematic diagrams of the mass transfer sub-process of the first specific embodiment provided by the first embodiment of the present invention.
  • the sub-process of mass transfer is used to transfer the light-emitting diode 10 from the original substrate 20 to the transfer device 40.
  • the step of transferring the light-emitting diode 10 to the transfer device 40 specifically includes:
  • the temporary substrate 30 coated with the second adhesive layer 31 is used to paste the light-emitting diodes 10 generated on the original substrate 20 at intervals to the temporary substrate 30.
  • the light emitting diodes 10 are generated on the original substrate 20 at intervals, and the first end surface 101 of the light emitting diode 10 faces the original substrate 20.
  • the temporary substrate 30 coated with the second adhesive layer 31 is placed above the original substrate 20 with the second adhesive layer 31 facing the light emitting diode 10.
  • the temporary substrate 30 is moved in the direction of the light-emitting diode 10 so that the light-emitting diode 10 is attached to the temporary substrate 30 through the second adhesive layer 31.
  • the second adhesive layer 31 is a pyrolytic glue, the viscosity of which decreases with the increase of temperature;
  • step S203 the original substrate 20 is peeled off. Specifically, the laser device 90 is placed on the side of the original substrate 20 away from the light emitting diode 10, and the laser device 90 irradiates the original substrate 20 with laser light to peel off the original substrate 20;
  • step S205 the light emitting diode 10 is grasped by the transfer device 40. Specifically, the transfer substrate 42 coated with the first adhesive layer 41 is placed above the temporary substrate 30 with the first adhesive layer 41 facing the light emitting diode 10. Move the transfer device 40 in the direction of the light emitting diode 10 so that the first adhesive layer 41 is in contact with the light emitting diode 10. At the same time, the temporary substrate 30 is heated by the heater 80. Specifically, the heater 80 is placed on the side of the temporary substrate 30 away from the light emitting diode 10. The heater 80 heats the temporary substrate 30 to increase the temperature of the second adhesive layer 31.
  • the viscosity of the second adhesive layer 31 is reduced, so that the viscosity of the second adhesive layer 31 to the light-emitting diode 10 is smaller than that of the first adhesive layer 41 to the light-emitting diode 10, and the light-emitting diode 10 is grasped by the transfer device 40 to peel off the temporary substrate 30.
  • FIG. 9 and FIG. 11 are schematic diagrams of the mass transfer sub-process of the second specific embodiment provided by the first embodiment of the present invention.
  • the sub-process of mass transfer is used to transfer the light-emitting diode 10 from the original substrate 20 to the transfer device 40.
  • the step of transferring the light-emitting diode 10 to the transfer device 40 specifically includes:
  • the transfer device 40 is used to capture the light-emitting diodes 10 generated on the native substrate 20 at intervals. Specifically, the light-emitting diodes 10 are generated on the original substrate 20 at intervals, and the second end surface 102 of the light-emitting diode 10 faces the original substrate 20.
  • the transfer substrate 42 coated with the first adhesive layer 41 is placed above the original substrate 20 with the first adhesive layer 41 facing the light emitting diode 10. Move the transfer device 40 in the direction of the light-emitting diode 10, so that the light-emitting diode 10 is attached to the transfer substrate 40 through the first adhesive layer 41;
  • step S303 the original substrate 20 is peeled off. Specifically, the laser device 90 is placed on the side of the original substrate 20 away from the light emitting diode 10, and the laser device 90 irradiates the original substrate 20 with laser light to peel off the original substrate 20.
  • FIG. 15 and FIG. 16 are schematic diagrams of the mass transfer sub-process provided by the fifth embodiment of the present invention.
  • the mass transfer sub-process provided in the fifth embodiment is different from the mass transfer sub-process provided in the first embodiment in that the mass transfer sub-process provided in the fifth embodiment further includes:
  • step S204 the etching device 100 is used to remove the second adhesive layer 31 between the light emitting diodes 10. Specifically, the etching device 100 is placed above the temporary substrate 30 and facing the light-emitting diode 10, and the second adhesive layer 31 between the light-emitting diodes 10 is removed by dry etching, so that only the second adhesive layer 31 is left under the light-emitting diode 10 .
  • the light-emitting diodes 10 pasted on the temporary substrate 30 through the second adhesive layer 31 correspond to the plurality of protrusions 420 of the transfer substrate 42 in a one-to-one correspondence.
  • the other processes of the mass transfer sub-process provided in the fifth embodiment are basically the same as the mass transfer sub-processes provided in the first embodiment, and will not be repeated here.
  • the second adhesive layer 31 between the light-emitting diodes 10 is removed, so that the light-emitting diode 10 can be accurately aligned with the protrusion 420 on the transfer device 40 when the transfer device 40 grasps the light-emitting diode 10
  • the alignment also avoids the problem of offset of the light-emitting diode 10.

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Abstract

Disclosed is a mass transfer system (1000) for light-emitting diodes (10). The mass transfer system (1000) comprises: a transfer device (40) that captures the light-emitting diodes (10) to a display backplane (50); and a magnetic device (60) having a magnetic field that attracts the light-emitting diodes (10), wherein the light-emitting diodes (10) are selectively attracted from the transfer device (40) to the display backplane (50) under the action of the magnetic field. Disclosed is a mass transfer method for light-emitting diodes (10). The mass transfer method is applied to the mass transfer system (1000) for light-emitting diodes (10), and the mass transfer system (1000) comprises the transfer device (40) and the magnetic device (60). The mass transfer method comprises: using the transfer device (40) to achieve one-to-one correspondence between the light-emitting diodes (10) and fixing points, at which the light-emitting diodes (10) are to be mounted, of the display backplane (50); and using the magnetic field of the magnetic device (60) to attract the light-emitting diodes (10) so as to selectively attract the light-emitting diodes (10) from the transfer device (40) to the display backplane (50).

Description

一种发光二极管的巨量转移系统以及巨量转移方法Mass transfer system and mass transfer method of light emitting diode 技术领域Technical field
本发明涉及微型发光二极管(Micro-LED)技术领域,尤其一种发光二极管的巨量转移系统以及巨量转移方法。The present invention relates to the technical field of micro-light emitting diodes (Micro-LED), in particular to a mass transfer system and a mass transfer method of light emitting diodes.
背景技术Background technique
微型发光二极管具有良好的稳定性、寿命,以及运行温度上的优势。同时,微型发光二极管也继承了发光二极管低功耗、色彩饱和度高、反应速度快、对比度强等优点。因此,微型发光二极管具有极大的应用前景,例如微型发光二极管显示屏。Miniature light-emitting diodes have good stability, longevity, and advantages in operating temperature. At the same time, miniature light-emitting diodes also inherit the advantages of light-emitting diodes such as low power consumption, high color saturation, fast response speed, and strong contrast. Therefore, miniature light-emitting diodes have great application prospects, such as miniature light-emitting diode display screens.
微型发光二极管显示屏在制造过程中需要将原生基板上的发光二极管转移固定到显示屏背板上。传统的巨量转移方法是将显示屏背板上的金属焊料加热熔融后,利用转移基板将发光二极管以加压的方式让发光二极管与金属焊料贴合,以将发光二极管固定于显示屏背板。但是,由于转移基板在加压过程中难以控制压力的大小,很容易造成发光二极管的破裂、损坏。并且,传统的巨量转移方法中,将发光二极管固定于转移基板通常采用的是复杂的发光二极管弱化结构。发光二极管弱化结构的制程非常困难,极大影响了发光二极管显示屏的制造效率。During the manufacturing process of the miniature light-emitting diode display, the light-emitting diode on the original substrate needs to be transferred and fixed to the display backplane. The traditional mass transfer method is to heat and melt the metal solder on the backplane of the display screen, and then use the transfer substrate to press the light-emitting diodes to bond the light-emitting diodes with the metal solder to fix the light-emitting diodes on the backplane of the display screen. . However, since it is difficult to control the pressure of the transfer substrate during the pressurization process, it is easy to cause cracks and damages of the light-emitting diodes. Moreover, in the traditional mass transfer method, the light-emitting diodes are usually fixed on the transfer substrate with a complex weakening structure of the light-emitting diodes. The manufacturing process of the light-emitting diode weakened structure is very difficult, which greatly affects the manufacturing efficiency of the light-emitting diode display screen.
技术问题technical problem
本发明提供了一种发光二极管的巨量转移系统,可以有效避免发光二极管在转移过程中出现破裂、损坏等现象,同时还能提高发光二极管显示屏的制造效率。The invention provides a mass transfer system of light-emitting diodes, which can effectively avoid the phenomenon of cracking and damage of the light-emitting diodes during the transfer process, and at the same time can improve the manufacturing efficiency of the light-emitting diode display screens.
技术解决方案Technical solutions
第一方面,本发明实施例提供一种发光二极管的巨量转移系统,所述巨量转移系统包括:In a first aspect, an embodiment of the present invention provides a mass transfer system for light-emitting diodes, and the mass transfer system includes:
转移装置,将所述发光二极管抓取至所述显示背板;以及A transfer device for grabbing the light-emitting diode to the display backplane; and
磁性装置,具有吸引所述发光二极管的磁场,所述发光二极管在所述磁场的作用下,从所述转移装置被选择吸附至所述显示背板。The magnetic device has a magnetic field for attracting the light-emitting diode, and the light-emitting diode is selectively adsorbed from the transfer device to the display back plate under the action of the magnetic field.
第二方面,本发明实施例提供一种发光二极管的巨量转移方法,所述巨量转移方法应用于发光二极管的巨量转移系统,所述巨量转移系统包括转移装置及磁性装置,所述巨量转移方法包括:In a second aspect, an embodiment of the present invention provides a mass transfer method for light emitting diodes. The mass transfer method is applied to a mass transfer system for light emitting diodes. The mass transfer system includes a transfer device and a magnetic device. Mass transfer methods include:
利用所述转移装置将所述发光二极管与所述显示背板待安装所述发光二极管的固定点一一对应;以及Using the transfer device to correspond the light-emitting diodes to the fixing points of the display backplane where the light-emitting diodes are to be mounted in a one-to-one correspondence; and
利用所述磁性装置的磁场吸引所述发光二极管,以将所述发光二极管从所述转移装置选择吸附至所述显示背板。The magnetic field of the magnetic device is used to attract the light-emitting diode to selectively adsorb the light-emitting diode from the transfer device to the display backplane.
有益效果Beneficial effect
上述发光二极管的巨量转移系统以及巨量转移方法,通过利用通电螺线管能够产生磁场的特性,在将发光二极管转移至显示背板时,直接从转移装置将发光二极管吸附至显示背板,有效避免了发光二极管在转移过程中因压力等问题出现破裂、损坏的现象,同时也提高了发光二极管显示屏的制造效率。The mass transfer system and mass transfer method for light-emitting diodes described above utilize the characteristics of the energized solenoid to generate a magnetic field. When the light-emitting diode is transferred to the display backplane, the light-emitting diode is directly absorbed from the transfer device to the display backplane, It effectively avoids the phenomenon that the light-emitting diode is broken or damaged due to pressure and other problems during the transfer process, and at the same time, the manufacturing efficiency of the light-emitting diode display screen is improved.
附图说明Description of the drawings
图1为本发明第一实施例提供的巨量转移系统的示意图。Fig. 1 is a schematic diagram of a mass transfer system provided by the first embodiment of the present invention.
图2为本发明第二实施例提供的巨量转移系统的示意图。Fig. 2 is a schematic diagram of a mass transfer system provided by a second embodiment of the present invention.
图3为本发明第三实施例提供的巨量转移系统的示意图。Fig. 3 is a schematic diagram of a mass transfer system provided by a third embodiment of the present invention.
图4为本发明第四实施例提供的巨量转移系统的示意图。Fig. 4 is a schematic diagram of a mass transfer system provided by a fourth embodiment of the present invention.
图5为本发明实施例提供的巨量转移流程图。Fig. 5 is a flow chart of mass transfer provided by an embodiment of the present invention.
图6为本发明第一实施例提供的第一具体实施例巨量转移过程示意图。FIG. 6 is a schematic diagram of the mass transfer process in the first specific embodiment provided by the first embodiment of the present invention.
图7为本发明第一实施例提供的第二具体实施例巨量转移过程示意图。FIG. 7 is a schematic diagram of the mass transfer process in the second specific embodiment provided by the first embodiment of the present invention.
图8为本发明第一实施例提供的第一具体实施例巨量转移子流程图。FIG. 8 is a sub-flow chart of the first specific embodiment mass transfer provided by the first embodiment of the present invention.
图9为本发明第一实施例提供的第二具体实施例巨量转移子流程图。FIG. 9 is a sub-flow chart of mass transfer in the second specific embodiment provided by the first embodiment of the present invention.
图10为本发明第一实施例提供的第一具体实施例巨量转移子过程示意图。FIG. 10 is a schematic diagram of the mass transfer sub-process of the first specific embodiment provided by the first embodiment of the present invention.
图11为本发明第一实施例提供的第二具体实施例巨量转移子过程示意图。FIG. 11 is a schematic diagram of the mass transfer sub-process in the second specific embodiment provided by the first embodiment of the present invention.
图12为本发明第二实施例提供的巨量转移过程示意图。FIG. 12 is a schematic diagram of the mass transfer process provided by the second embodiment of the present invention.
图13为本发明第三实施例提供的巨量转移过程示意图。FIG. 13 is a schematic diagram of the mass transfer process provided by the third embodiment of the present invention.
图14为本发明第四实施例提供的巨量转移过程示意图。FIG. 14 is a schematic diagram of the mass transfer process provided by the fourth embodiment of the present invention.
图15为本发明第五实施例提供的巨量转移子过程流程图。FIG. 15 is a flowchart of the sub-process of mass transfer provided by the fifth embodiment of the present invention.
图16为本发明第五实施例提供的巨量转移子过程示意图。FIG. 16 is a schematic diagram of the mass transfer sub-process provided by the fifth embodiment of the present invention.
本发明的最佳实施方式The best mode of the present invention
为使得对本发明的内容有更清楚及更准确的理解,现将贴合附图详细说明。说明书附图示出本发明的实施例的示例,其中,相同的标号表示相同的元件。可以理解的是,说明书附图示出的比例并非本发明实际实施的比例,其仅为示意说明为目的,并非依照原尺寸作图。In order to have a clearer and more accurate understanding of the content of the present invention, a detailed description will now be made in conjunction with the accompanying drawings. The drawings of the specification show examples of embodiments of the present invention, in which the same reference numerals denote the same elements. It can be understood that the scale shown in the drawings in the specification is not the scale of the actual implementation of the present invention, and is only for illustrative purposes, and is not drawn according to the original size.
请参看图1,其为本发明第一实施例提供的巨量转移系统示意图。巨量转移系统1000用于将发光二极管10转移至显示背板50。其中,发光二极管10包括朝向转移装置40的第一端面101、与第一端面相背设置的第二端面102。第二端面102与显示背板50结合。发光二极管10具有磁性。具体地,发光二极管10的电极11可采用金、银、铜、铁、钴、镍、铝、钛、钼、铬、锌等具有磁性的材料制成。发光二极管10的电极11中还可以蒸镀或掺杂磁性材料,以使得电极11具有更强的磁性。Please refer to FIG. 1, which is a schematic diagram of the mass transfer system provided by the first embodiment of the present invention. The mass transfer system 1000 is used to transfer the light emitting diode 10 to the display backplane 50. The light emitting diode 10 includes a first end surface 101 facing the transfer device 40 and a second end surface 102 disposed opposite to the first end surface. The second end surface 102 is combined with the display backplane 50. The light emitting diode 10 has magnetism. Specifically, the electrode 11 of the light-emitting diode 10 can be made of a magnetic material such as gold, silver, copper, iron, cobalt, nickel, aluminum, titanium, molybdenum, chromium, and zinc. The electrode 11 of the light emitting diode 10 may also be vapor-deposited or doped with magnetic materials, so that the electrode 11 has stronger magnetic properties.
巨量转移系统1000包括转移装置40、磁性装置60。具体地,转移装置40包括转移基板42、以及涂布于转移基板42的第一黏着层41。转移装置40通过第一黏着层41抓取发光二极管10并转移至显示背板50上方,且发光二极管10的第二端面102朝向显示背板50。其中,第一黏着层41为热解胶,热解胶的粘性随温度的增加而减小。The mass transfer system 1000 includes a transfer device 40 and a magnetic device 60. Specifically, the transfer device 40 includes a transfer substrate 42 and a first adhesive layer 41 coated on the transfer substrate 42. The transfer device 40 grabs the light-emitting diode 10 through the first adhesive layer 41 and transfers it to the top of the display back plate 50, and the second end surface 102 of the light-emitting diode 10 faces the display back plate 50. Among them, the first adhesive layer 41 is a pyrolysis glue, and the viscosity of the pyrolysis glue decreases with the increase of temperature.
磁性装置60包括控制器62、间隔设置的多个螺线管61。具体地,螺线管61与设置于显示背板50的固定点501一一对应。螺线管61的两端通过导线(图未标)与磁性装置60底部的控制器62电连接。螺线管61通过控制器62进行通电或断电。每一螺线管61通电时产生磁场,磁场能够吸引发光二极管10。发光二极管10在磁场的作用下从转移装置40被吸附至显示背板50。每一螺线管61外侧包覆着抗磁套管611,抗磁管套611可以避免各螺线管61通电后产生的磁场相互干扰。The magnetic device 60 includes a controller 62 and a plurality of solenoids 61 arranged at intervals. Specifically, the solenoid 61 corresponds to the fixed point 501 provided on the display back plate 50 in a one-to-one correspondence. Both ends of the solenoid 61 are electrically connected to the controller 62 at the bottom of the magnetic device 60 through wires (not shown in the figure). The solenoid 61 is energized or de-energized by the controller 62. Each solenoid 61 generates a magnetic field when it is energized, and the magnetic field can attract the light-emitting diode 10. The light emitting diode 10 is attracted from the transfer device 40 to the display back plate 50 under the action of a magnetic field. The outer side of each solenoid 61 is covered with a diamagnetic sleeve 611, and the diamagnetic sleeve 611 can prevent the magnetic fields generated by the solenoids 61 from interfering with each other after being energized.
显示背板50与磁性装置60之间设置有加热平台70。加热平台70贴合显示背板50,加热平台70用于对设置于显示背板50的固定点501进行加热。固定点501加热后呈熔融状,用于固定发光二极管10于显示背板50。其中,固定点501为金属焊料,金属焊料包括锡和铟等。A heating platform 70 is provided between the display back plate 50 and the magnetic device 60. The heating platform 70 is attached to the display back plate 50, and the heating platform 70 is used to heat the fixed points 501 provided on the display back plate 50. The fixing point 501 becomes molten after being heated, and is used to fix the light-emitting diode 10 to the display back plate 50. Among them, the fixed point 501 is metal solder, and the metal solder includes tin, indium, and the like.
请参看图2,其为本发明第二实施例提供的巨量转移系统示意图。第二实施例提供的巨量转移系统2000与第一实施例提供的巨量转移系统1000的不同之处在于,每一螺线管61包括一个开关610,开关610用于控制相对应的螺线管61与电源供应器62的电连接。通电的螺线管61产生的磁场能够吸引发光二极管10。发光二极管10在磁场的作用下从转移装置40被选择性吸附至显示背板50。巨量转移系统2000的其他结构与巨量转移系统1000的基本一致,在此不再赘述。Please refer to FIG. 2, which is a schematic diagram of the mass transfer system provided by the second embodiment of the present invention. The difference between the mass transfer system 2000 provided in the second embodiment and the mass transfer system 1000 provided in the first embodiment is that each solenoid 61 includes a switch 610, and the switch 610 is used to control the corresponding solenoid. The tube 61 is electrically connected to the power supply 62. The magnetic field generated by the energized solenoid 61 can attract the light-emitting diode 10. The light emitting diode 10 is selectively adsorbed from the transfer device 40 to the display back plate 50 under the action of a magnetic field. The other structures of the mass transfer system 2000 are basically the same as those of the mass transfer system 1000, and will not be repeated here.
请参看图3,其为本发明第三实施例提供的巨量转移系统示意图。第三实施例提供的巨量转移系统3000与第二实施例提供的巨量转移系统2000的不同之处在于,转移基板42间隔设置有多个凸柱420,凸柱420与设置于显示背板50的固定点501一一对应。第一黏着层41涂布于多个凸柱420。发光二极管10通过第一黏着层41粘贴于凸柱420。巨量转移系统3000的其他结构与巨量转移系统2000的基本一致,在此不再赘述。Please refer to FIG. 3, which is a schematic diagram of the mass transfer system provided by the third embodiment of the present invention. The difference between the mass transfer system 3000 provided by the third embodiment and the mass transfer system 2000 provided by the second embodiment is that the transfer substrate 42 is provided with a plurality of protrusions 420 at intervals, and the protrusions 420 are different from those provided on the display backplane. The fixed points 501 of 50 correspond one-to-one. The first adhesive layer 41 is coated on the plurality of protrusions 420. The light emitting diode 10 is pasted to the bump 420 through the first adhesive layer 41. The other structures of the mass transfer system 3000 are basically the same as those of the mass transfer system 2000, and will not be repeated here.
请参看图4,其为本发明第四实施例提供的巨量转移系统示意图。第四实施例提供的巨量转移系统4000与第三实施例提供的巨量转移系统3000的不同之处在于,磁性装置60包含有间隔设置的多个磁体63,磁体63与设置于显示背板50的固定点501一一对应。每一磁体63外侧包覆着抗磁套管631,抗磁管套631可以避免各磁体63产生的磁场相互干扰。磁体63产生的磁场能够吸引发光二极管10。发光二极管10在磁场的作用下从转移装置40被吸附至显示背板50。巨量转移系统4000的其他结构与巨量转移系统3000的基本一致,在此不再赘述。Please refer to FIG. 4, which is a schematic diagram of the mass transfer system provided by the fourth embodiment of the present invention. The difference between the mass transfer system 4000 provided by the fourth embodiment and the mass transfer system 3000 provided by the third embodiment is that the magnetic device 60 includes a plurality of magnets 63 arranged at intervals, and the magnets 63 are different from those provided on the display backplane. The fixed points 501 of 50 correspond one-to-one. The outer side of each magnet 63 is covered with a diamagnetic sleeve 631, and the diamagnetic sleeve 631 can prevent the magnetic fields generated by the magnets 63 from interfering with each other. The magnetic field generated by the magnet 63 can attract the light emitting diode 10. The light emitting diode 10 is attracted from the transfer device 40 to the display back plate 50 under the action of a magnetic field. The other structures of the mass transfer system 4000 are basically the same as those of the mass transfer system 3000, and will not be repeated here.
请结合参看图5和图6,其为本发明第一实施例提供的第一具体实施例的巨量转移示意图。发光二极管10为倒装型,即发光二极管10的两个电极11均位于发光二极管10的第二端面102。转移装置40通过涂布于转移基板42的第一黏着层41抓取的发光二极管10间隔粘贴于转移基板42,将发光二极管10转移至显示背板50的步骤具体包括:Please refer to FIG. 5 and FIG. 6 in combination, which are schematic diagrams of the mass transfer of the first specific embodiment provided by the first embodiment of the present invention. The light-emitting diode 10 is a flip-chip type, that is, the two electrodes 11 of the light-emitting diode 10 are both located on the second end surface 102 of the light-emitting diode 10. The light-emitting diodes 10 captured by the transfer device 40 through the first adhesive layer 41 coated on the transfer substrate 42 are pasted on the transfer substrate 42 at intervals, and the steps of transferring the light-emitting diodes 10 to the display backplane 50 specifically include:
步骤S101,利用转移装置40将发光二极管10与显示背板50待安装发光二极管10的固定点501一一对应。具体地,移动转移装置40至显示背板50上方,使转移基板42上粘贴的发光二极管10与设置于显示背板50待安装发光二极管10的固定点501一一对应;In step S101, the light-emitting diode 10 is one-to-one corresponding to the fixed point 501 of the light-emitting diode 10 to be mounted on the display backplane 50 by using the transfer device 40. Specifically, move the transfer device 40 to above the display backplane 50, so that the light-emitting diodes 10 pasted on the transfer substrate 42 correspond one-to-one with the fixed points 501 of the light-emitting diodes 10 to be mounted on the display backplane 50;
步骤S103,利用磁性装置60的磁场吸引发光二极管10。具体地,利用控制器62给螺线管61通电,以使得通电螺线管61产生磁场,以将发光二极管10从转移装置40吸附至显示背板50。同时,利用加热器80对转移装置40进行加热。具体地,将加热器80放置于转移装置40远离发光二极管10的一侧。加热器80对转移装置40进行加热,增加第一黏着层41的温度。从而第一黏着层41的粘性减小,以使得第一黏着层41对发光二极管10的粘性小于通电螺线管61对发光二极管10的吸引力,发光二极管10被吸附至显示背板50。被吸附下的发光二极管10放置于固定点501,发光二极管10的两个电极11与固定点501接触;In step S103, the light emitting diode 10 is attracted by the magnetic field of the magnetic device 60. Specifically, the controller 62 is used to energize the solenoid 61 so that the energized solenoid 61 generates a magnetic field to attract the light-emitting diode 10 from the transfer device 40 to the display back panel 50. At the same time, the transfer device 40 is heated by the heater 80. Specifically, the heater 80 is placed on the side of the transfer device 40 away from the light emitting diode 10. The heater 80 heats the transfer device 40 to increase the temperature of the first adhesive layer 41. Therefore, the viscosity of the first adhesive layer 41 is reduced, so that the viscosity of the first adhesive layer 41 to the light-emitting diode 10 is less than the attraction force of the energized solenoid 61 to the light-emitting diode 10, and the light-emitting diode 10 is adsorbed to the display back panel 50. The adsorbed light-emitting diode 10 is placed at the fixed point 501, and the two electrodes 11 of the light-emitting diode 10 are in contact with the fixed point 501;
步骤S105,利用加热平台70对显示背板50进行加热以熔融固定点501。加热熔融后的固定点501与发光二极管10的两个电极11结合,将发光二级管10固定于显示背板50。Step S105, using the heating platform 70 to heat the display back plate 50 to melt the fixed point 501. The fixed point 501 after heating and melting is combined with the two electrodes 11 of the light-emitting diode 10 to fix the light-emitting diode 10 on the display back plate 50.
请结合参看图5和图7,其为本发明第一实施例提供的第二具体实施例的巨量转移示意图。第二具体实施例提供的巨量转移过程与第一具体实施例提供的巨量转移过程不同之处在于,发光二极管10为垂直型,即发光二极管10的两个电极11分别位于发光二极管10的第一端面101和第二端面102。发光二极管10被吸附至显示背板50并放置于固定点501,位于发光二极管10第二端面102的电极11与固定点501接触。加热熔融后的固定点501与发光二极管10第二端面102的电极11结合,将发光二级管10固定于显示背板50。第二具体实施例提供的巨量转移的其他过程与第一具体实施例提供的巨量转移过程基本一致,在此不再赘述。Please refer to FIG. 5 and FIG. 7 in combination, which are schematic diagrams of the mass transfer of the second specific embodiment provided by the first embodiment of the present invention. The difference between the mass transfer process provided by the second embodiment and the mass transfer process provided by the first embodiment is that the light-emitting diode 10 is vertical, that is, the two electrodes 11 of the light-emitting diode 10 are located on the side of the light-emitting diode 10, respectively. The first end surface 101 and the second end surface 102. The light emitting diode 10 is adsorbed to the display backplane 50 and placed at the fixed point 501, and the electrode 11 on the second end surface 102 of the light emitting diode 10 is in contact with the fixed point 501. The fixed point 501 after heating and melting is combined with the electrode 11 of the second end surface 102 of the light-emitting diode 10 to fix the light-emitting diode 10 to the display back plate 50. The other processes of the mass transfer provided in the second specific embodiment are basically the same as the process of mass transfer provided in the first specific embodiment, and will not be repeated here.
在上述实施例中,通过利用通电螺线管61能够产生磁场的特性,在将发光二极管10转移至显示背板50时,直接从转移装置40将具有磁性的发光二极管10吸附至显示背板50,有效避免了发光二极管10在转移过程中因压力等问题出现破裂、损坏的现象。同时,由于第一黏着层41采用的是热解胶,其在受热后粘性减小,故只需要给螺线管61以较小的电流即可将发光二极管10吸附至显示背板50。采用第一黏着层41将发光二极管10固定于转移基板42的方法,避免了传统复杂的弱化结构,提高了发光二极管显示屏的制造效率。In the above embodiment, by using the characteristics of the energized solenoid 61 that can generate a magnetic field, when the light-emitting diode 10 is transferred to the display back panel 50, the magnetic light-emitting diode 10 is directly adsorbed to the display back panel 50 from the transfer device 40 This effectively avoids the phenomenon that the light-emitting diode 10 is broken or damaged due to pressure and other problems during the transfer process. At the same time, since the first adhesive layer 41 is made of pyrolytic glue, its viscosity decreases after being heated, so it is only necessary to apply a small current to the solenoid 61 to adsorb the light-emitting diode 10 to the display backplane 50. The method of using the first adhesive layer 41 to fix the light-emitting diode 10 on the transfer substrate 42 avoids the traditional complex weakening structure and improves the manufacturing efficiency of the light-emitting diode display screen.
请参看图12,其为本发明第二实施例提供的巨量转移过程示意图。第二实施例提供的巨量转移过程与第一实施例提供的巨量转移过程不同之处在于,每一螺线管61包括一个开关610,开关610用于控制相对应的螺线管61与电源供应器62的电连接。利用控制器62给螺线管61通电时,利用开关610控制螺线管61与控制器62之间的电连接,通电的螺线管61产生的磁场能够吸引发光二极管10。待转移的发光二极管10在磁场的作用下从转移装置40被选择性吸附至显示背板50。第二实施例提供的巨量转移的其他过程与第一实施例提供的巨量转移过程基本一致,在此不再赘述。Please refer to FIG. 12, which is a schematic diagram of the mass transfer process provided by the second embodiment of the present invention. The mass transfer process provided by the second embodiment is different from the mass transfer process provided by the first embodiment in that each solenoid 61 includes a switch 610, and the switch 610 is used to control the corresponding solenoid 61 and The electrical connection of the power supply 62. When the solenoid 61 is energized by the controller 62, the electric connection between the solenoid 61 and the controller 62 is controlled by the switch 610, and the magnetic field generated by the energized solenoid 61 can attract the light-emitting diode 10. The light emitting diode 10 to be transferred is selectively adsorbed from the transfer device 40 to the display back plate 50 under the action of a magnetic field. The other processes of the mass transfer provided in the second embodiment are basically the same as the process of mass transfer provided in the first embodiment, and will not be repeated here.
在上述实施例中,每一螺线管61设置有一个开关610,以使得每一螺线管61能够独立通电或断电,可以有选择地将发光二极管10吸引至显示背板50,从而实现选择性巨量转移。In the above-mentioned embodiment, each solenoid 61 is provided with a switch 610, so that each solenoid 61 can be independently energized or de-energized, and the light-emitting diode 10 can be selectively attracted to the display backplane 50, thereby achieving Selective mass transfer.
请参看图13,其为本发明第三实施例提供的巨量转移过程示意图。第三实施例提供的巨量转移过程与第二实施例提供的巨量转移过程不同之处在于,转移基板42间隔设置有多个凸柱420,凸柱420与设置于显示背板50的固定点501一一对应。第一黏着层41涂布于多个凸柱420。转移装置40通过涂布于凸柱420的第一黏着层41抓取的发光二极管10间隔粘贴于转移基板42。第三实施例提供的巨量转移的其他过程与第二实施例提供的巨量转移过程基本一致,在此不再赘述。Please refer to FIG. 13, which is a schematic diagram of the mass transfer process provided by the third embodiment of the present invention. The mass transfer process provided by the third embodiment is different from the mass transfer process provided by the second embodiment in that a plurality of protrusions 420 are arranged at intervals on the transfer substrate 42, and the protrusions 420 are fixed on the display backplane 50. The points 501 correspond one to one. The first adhesive layer 41 is coated on the plurality of protrusions 420. The transfer device 40 is attached to the transfer substrate 42 at intervals by the light emitting diodes 10 grabbed by the first adhesive layer 41 coated on the protrusion 420. The other processes of the mass transfer provided in the third embodiment are basically the same as the process of the mass transfer provided in the second embodiment, and will not be repeated here.
在上述实施例中,在转移基板42上设置多个凸柱420,使得将发光二极管10转移至显示背板50时,发光二极管10能与显示背板50上待转移的位置精准对位。同时也避免了在磁性装置60对发光二极管10选择性吸引的过程中出现其他未吸取发光二极管10移位的现象。In the above embodiment, a plurality of protrusions 420 are provided on the transfer substrate 42 so that when the light-emitting diode 10 is transferred to the display backplane 50, the light-emitting diode 10 can be accurately aligned with the position to be transferred on the display backplane 50. At the same time, it also avoids the displacement of other unabsorbed light-emitting diodes 10 during the process of selectively attracting the light-emitting diodes 10 by the magnetic device 60.
请参看图14,其为本发明第四实施例提供的巨量转移过程示意图。第四实施例提供的巨量转移过程与第三实施例提供的巨量转移过程不同之处在于,磁性装置60包含有间隔设置的多个磁体63,磁体63与设置于显示背板50的固定点501一一对应。每一磁体63外侧包覆着抗磁套管631,抗磁管套631可以避免各磁体63产生的磁场相互干扰。磁体63产生的磁场能够吸引发光二极管10。发光二极管10在磁场的作用下从转移装置40被吸附至显示背板50。第四实施例提供的巨量转移的其他过程与第三实施例提供的巨量转移过程基本一致,在此不再赘述。Please refer to FIG. 14, which is a schematic diagram of the mass transfer process provided by the fourth embodiment of the present invention. The mass transfer process provided by the fourth embodiment is different from the mass transfer process provided by the third embodiment in that the magnetic device 60 includes a plurality of magnets 63 arranged at intervals, and the magnets 63 are fixed on the display back plate 50. The points 501 correspond one to one. The outer side of each magnet 63 is covered with a diamagnetic sleeve 631, and the diamagnetic sleeve 631 can prevent the magnetic fields generated by the magnets 63 from interfering with each other. The magnetic field generated by the magnet 63 can attract the light emitting diode 10. The light emitting diode 10 is attracted from the transfer device 40 to the display back plate 50 under the action of a magnetic field. The other processes of the mass transfer provided by the fourth embodiment are basically the same as the process of the mass transfer provided by the third embodiment, and will not be repeated here.
请结合参看图8和图10,其为本发明第一实施例提供的第一具体实施例的巨量转移子过程示意图。巨量转移的子过程用于将发光二极管10从原生基板20转移至转移装置40。将发光二极管10转移至转移装置40的步骤具体包括:Please refer to FIG. 8 and FIG. 10 in combination, which are schematic diagrams of the mass transfer sub-process of the first specific embodiment provided by the first embodiment of the present invention. The sub-process of mass transfer is used to transfer the light-emitting diode 10 from the original substrate 20 to the transfer device 40. The step of transferring the light-emitting diode 10 to the transfer device 40 specifically includes:
步骤S201,利用涂布有第二黏着层31的临时基板30粘贴间隔生成于原生基板20的发光二极管10于临时基板30。具体地,发光二极管10间隔生成于原生基板20,发光二极管10的第一端面101朝向原生基板20。涂布有第二黏着层31的临时基板30放置于原生基板20上方,并使第二黏着层31朝向发光二极管10。向发光二极管10的方向移动临时基板30,以使得发光二极管10通过第二黏着层31粘贴于临时基板30。其中,第二黏着层31为热解胶,其粘性随温度的增加而减小;In step S201, the temporary substrate 30 coated with the second adhesive layer 31 is used to paste the light-emitting diodes 10 generated on the original substrate 20 at intervals to the temporary substrate 30. Specifically, the light emitting diodes 10 are generated on the original substrate 20 at intervals, and the first end surface 101 of the light emitting diode 10 faces the original substrate 20. The temporary substrate 30 coated with the second adhesive layer 31 is placed above the original substrate 20 with the second adhesive layer 31 facing the light emitting diode 10. The temporary substrate 30 is moved in the direction of the light-emitting diode 10 so that the light-emitting diode 10 is attached to the temporary substrate 30 through the second adhesive layer 31. Wherein, the second adhesive layer 31 is a pyrolytic glue, the viscosity of which decreases with the increase of temperature;
步骤S203,剥离原生基板20。具体地,放置镭射装置90于原生基板20远离发光二极管10的一侧,镭射装置90对原生基板20进行镭射光照射以剥离原生基板20;In step S203, the original substrate 20 is peeled off. Specifically, the laser device 90 is placed on the side of the original substrate 20 away from the light emitting diode 10, and the laser device 90 irradiates the original substrate 20 with laser light to peel off the original substrate 20;
步骤S205,利用转移装置40抓取发光二极管10。具体地,涂布有第一黏着层41的转移基板42放置于临时基板30上方,并使第一黏着层41朝向发光二极管10。向发光二极管10的方向移动转移装置40,以使得第一黏着层41与发光二极管10接触。同时,利用加热器80对临时基板30进行加热。具体地,将加热器80放置于临时基板30远离发光二极管10的一侧。加热器80对临时基板30进行加热,增加第二黏着层31的温度。从而第二黏着层31的粘性减小,以使得第二黏着层31对发光二极管10的粘性小于第一黏着层41对发光二极管10的粘性,发光二极管10通过转移装置40的抓取剥离临时基板30。In step S205, the light emitting diode 10 is grasped by the transfer device 40. Specifically, the transfer substrate 42 coated with the first adhesive layer 41 is placed above the temporary substrate 30 with the first adhesive layer 41 facing the light emitting diode 10. Move the transfer device 40 in the direction of the light emitting diode 10 so that the first adhesive layer 41 is in contact with the light emitting diode 10. At the same time, the temporary substrate 30 is heated by the heater 80. Specifically, the heater 80 is placed on the side of the temporary substrate 30 away from the light emitting diode 10. The heater 80 heats the temporary substrate 30 to increase the temperature of the second adhesive layer 31. As a result, the viscosity of the second adhesive layer 31 is reduced, so that the viscosity of the second adhesive layer 31 to the light-emitting diode 10 is smaller than that of the first adhesive layer 41 to the light-emitting diode 10, and the light-emitting diode 10 is grasped by the transfer device 40 to peel off the temporary substrate 30.
请参看图9和图11,其为本发明第一实施例提供的第二具体实施例的巨量转移子过程示意图。巨量转移的子过程用于将发光二极管10从原生基板20转移至转移装置40。将发光二极管10转移至转移装置40的步骤具体包括:Please refer to FIG. 9 and FIG. 11, which are schematic diagrams of the mass transfer sub-process of the second specific embodiment provided by the first embodiment of the present invention. The sub-process of mass transfer is used to transfer the light-emitting diode 10 from the original substrate 20 to the transfer device 40. The step of transferring the light-emitting diode 10 to the transfer device 40 specifically includes:
步骤S301,利用转移装置40抓取间隔生成于原生基板20的发光二极管10。具体地,发光二极管10间隔生成于原生基板20,发光二极管10的第二端面102朝向原生基板20。涂布有第一黏着层41的转移基板42放置于原生基板20上方,并使第一黏着层41朝向发光二极管10。向发光二极管10的方向移动转移装置40,以使得发光二极管10通过第一黏着层41粘贴于转移基板40;In step S301, the transfer device 40 is used to capture the light-emitting diodes 10 generated on the native substrate 20 at intervals. Specifically, the light-emitting diodes 10 are generated on the original substrate 20 at intervals, and the second end surface 102 of the light-emitting diode 10 faces the original substrate 20. The transfer substrate 42 coated with the first adhesive layer 41 is placed above the original substrate 20 with the first adhesive layer 41 facing the light emitting diode 10. Move the transfer device 40 in the direction of the light-emitting diode 10, so that the light-emitting diode 10 is attached to the transfer substrate 40 through the first adhesive layer 41;
步骤S303,剥离原生基板20。具体地,放置镭射装置90于原生基板20远离发光二极管10的一侧,镭射装置90对原生基板20进行镭射光照射以剥离原生基板20。In step S303, the original substrate 20 is peeled off. Specifically, the laser device 90 is placed on the side of the original substrate 20 away from the light emitting diode 10, and the laser device 90 irradiates the original substrate 20 with laser light to peel off the original substrate 20.
请结合参看图15和图16,其为本发明第五实施例提供的巨量转移子过程示意图。第五实施例提供的巨量转移子过程与第一实施例提供的巨量转移子过程不同之处在于,第五实施例提供的巨量转移子过程还包括:Please refer to FIG. 15 and FIG. 16 in combination, which are schematic diagrams of the mass transfer sub-process provided by the fifth embodiment of the present invention. The mass transfer sub-process provided in the fifth embodiment is different from the mass transfer sub-process provided in the first embodiment in that the mass transfer sub-process provided in the fifth embodiment further includes:
步骤S204,利用蚀刻装置100去除发光二极管10之间的第二黏着层31。具体地,放置蚀刻装置100于临时基板30上方并朝向发光二极管10,采用干蚀刻的方法去除发光二极管10之间的第二黏着层31,以使得仅发光二极管10下方留有第二黏着层31。通过第二黏着层31粘贴于临时基板30的发光二极管10与转移基板42的多个凸柱420一一对应。In step S204, the etching device 100 is used to remove the second adhesive layer 31 between the light emitting diodes 10. Specifically, the etching device 100 is placed above the temporary substrate 30 and facing the light-emitting diode 10, and the second adhesive layer 31 between the light-emitting diodes 10 is removed by dry etching, so that only the second adhesive layer 31 is left under the light-emitting diode 10 . The light-emitting diodes 10 pasted on the temporary substrate 30 through the second adhesive layer 31 correspond to the plurality of protrusions 420 of the transfer substrate 42 in a one-to-one correspondence.
第五实施例提供的巨量转移子过程的其他过程与第一实施例提供的巨量转移子过程的基本一致,在此不再赘述。The other processes of the mass transfer sub-process provided in the fifth embodiment are basically the same as the mass transfer sub-processes provided in the first embodiment, and will not be repeated here.
在上述实施例中,去除发光二极管10之间的第二黏着层31,以使得转移装置40在抓取发光二极管10的过程中,发光二极管10能与转移装置40上相对应的凸柱420精准对位,同时也避免了发光二极管10产生偏移的问题。In the above embodiment, the second adhesive layer 31 between the light-emitting diodes 10 is removed, so that the light-emitting diode 10 can be accurately aligned with the protrusion 420 on the transfer device 40 when the transfer device 40 grasps the light-emitting diode 10 The alignment also avoids the problem of offset of the light-emitting diode 10.
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘且本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. In this way, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and equivalent technologies, the present invention is also intended to include these modifications and variations.
以上所列举的仅为本发明较佳实施例而已,当然不能以此来限定本发明之权力范围,因此依本发明权利要求所作的等同变化,仍属于本发明所涵盖的范围。The above-listed are only preferred embodiments of the present invention, which of course cannot be used to limit the scope of rights of the present invention. Therefore, equivalent changes made according to the claims of the present invention still fall within the scope of the present invention.

Claims (1)

  1. 一种发光二极管的巨量转移系统,其特征在于,所述巨量转移系统包括:A mass transfer system for light-emitting diodes, characterized in that the mass transfer system includes:
    转移装置,将所述发光二极管抓取至所述显示背板;以及A transfer device for grabbing the light-emitting diode to the display backplane; and
    磁性装置,具有吸引所述发光二极管的磁场,所述发光二极管在所述磁场的作用下,从所述转移装置被选择吸附至所述显示背板。The magnetic device has a magnetic field for attracting the light-emitting diode, and the light-emitting diode is selectively adsorbed from the transfer device to the display back plate under the action of the magnetic field.
     To
    2.如权利要求1所述的巨量转移系统,其特征在于, 所述磁性装置为电磁装置,所述电磁装置设置有:2. The mass transfer system according to claim 1, wherein the magnetic device is an electromagnetic device, and the electromagnetic device is provided with:
    控制器;以及Controller; and
    间隔设置的多个螺线管,所述多个螺线管与所述控制器电连接,所述螺线管通过所述控制器进行通电或者断电,所述每一螺线管通电时产生磁场。A plurality of solenoids arranged at intervals, the plurality of solenoids are electrically connected to the controller, the solenoids are energized or de-energized by the controller, and each solenoid generates magnetic field.
     To
    3.如权利要求2所述的巨量转移系统,其特征在于,所述每一螺线管包括一个开关,所述开关用于控制相对应的所述螺线管与所述控制器的电连接。3. The mass transfer system according to claim 2, wherein each solenoid includes a switch, and the switch is used to control the electric power of the corresponding solenoid and the controller. connection.
     To
    4.如权利要求1所述的巨量转移系统,其特征在于,所述磁性装置包含有间隔设置的多个磁体。4. The mass transfer system of claim 1, wherein the magnetic device comprises a plurality of magnets arranged at intervals.
     To
    5.如权利要求1所述的巨量转移系统,其特征在于,所述转移装置包括:5. The mass transfer system of claim 1, wherein the transfer device comprises:
    转移基板;Transfer substrate
    涂布于所述转移基板的第一黏着层,通过所述第一黏着层抓取所述发光二极管粘贴于所述转移基板。The first adhesive layer is coated on the transfer substrate, and the light-emitting diode is grasped by the first adhesive layer and attached to the transfer substrate.
     To
    6.如权利要求5所述的巨量转移系统,其特征在于,所述第一黏着层为热解胶,所述热解胶的粘性随温度的增加而减小。6. The mass transfer system of claim 5, wherein the first adhesive layer is a pyrolysis glue, and the viscosity of the pyrolysis glue decreases with increasing temperature.
     To
    7.如权利要求6所述的巨量转移系统,其特征在于,所述巨量转移系统还包括:7. The mass transfer system of claim 6, wherein the mass transfer system further comprises:
    加热器,所述加热器设置于所述转移装置远离所述发光二极管的一侧,所述加热器用于将所述发光二极管吸附至所述显示背板时对所述转移装置加热。A heater, the heater is arranged on a side of the transfer device away from the light-emitting diode, and the heater is used to heat the transfer device when the light-emitting diode is adsorbed to the display backplane.
     To
    8.如权利要求1所述的巨量转移系统,其特征在于,所述巨量转移系统还包括:8. The mass transfer system of claim 1, wherein the mass transfer system further comprises:
    加热平台,所述加热平台设置于所述显示背板与所述磁性装置之间并贴合所述显示背板,所述加热平台用于对设置于所述显示背板的固定点进行加热,所述固定点加热后呈熔融状,用于固定所述发光二极管于所述显示背板。A heating platform, the heating platform is arranged between the display backplane and the magnetic device and is attached to the display backplane, the heating platform is used to heat the fixed points provided on the display backplane, The fixing point becomes molten after being heated, and is used to fix the light-emitting diode to the display backplane.
     To
    9.一种发光二极管的巨量转移方法,其特征在于,所述巨量转移方法应用于发光二极管的巨量转移系统,所述巨量转移系统包括转移装置及磁性装置,所述巨量转移方法包括:9. A mass transfer method of light emitting diodes, characterized in that the mass transfer method is applied to a mass transfer system of light emitting diodes, the mass transfer system includes a transfer device and a magnetic device, the mass transfer Methods include:
    利用所述转移装置将所述发光二极管与显示背板待安装所述发光二极管的固定点一一对应;以及Use the transfer device to map the light-emitting diodes to the fixed points on the display backplane where the light-emitting diodes are to be mounted in a one-to-one correspondence; and
    利用所述磁性装置的磁场吸引所述发光二极管,以将所述发光二极管从所述转移装置选择吸附至所述显示背板。The magnetic field of the magnetic device is used to attract the light-emitting diode to selectively adsorb the light-emitting diode from the transfer device to the display backplane.
     To
    10.如权利要求9所述的巨量转移方法,其特征在于,所述利用所述转移装置将所述发光二极管与所述固定点一一对应具体包括:10. The mass transfer method according to claim 9, wherein the one-to-one correspondence between the light-emitting diodes and the fixed points using the transfer device specifically comprises:
    涂布第一黏着层于所述转移装置的转移基板,通过所述第一黏着层抓取所述发光二极管粘贴于所述转移基板。Coating a first adhesive layer on the transfer substrate of the transfer device, grabbing the light-emitting diode through the first adhesive layer and pasting on the transfer substrate.
     To
    11.如权利要求9所述的巨量转移方法,其特征在于,所述利用所述转移装置将所述发光二极管与所述固定点一一对应还包括:11. The mass transfer method according to claim 9, wherein said using said transfer device to associate said light-emitting diodes with said fixed points one-to-one further comprises:
    涂布第一黏着层于所述转移装置的多个凸柱,所述多个凸柱间隔设置于所述转移装置的转移基板,通过所述第一黏着层抓取所述发光二极管粘贴于所述转移基板。Coating a first adhesive layer on the plurality of protrusions of the transfer device, the plurality of protrusions are arranged on the transfer substrate of the transfer device at intervals, and the light-emitting diode is grasped by the first adhesive layer and pasted on The transfer substrate.
     To
    12.如权利要求9所述的巨量转移方法,其特征在于,将所述发光二极管转移至所述转移装置之前,所述巨量转移方法还包括:12. The mass transfer method of claim 9, wherein before transferring the light-emitting diodes to the transfer device, the mass transfer method further comprises:
    利用涂布有第二黏着层的临时基板粘贴间隔生成于原生基板的发光二极管于所述临时基板,其中,所述发光二极管为倒装型,所述发光二极管的两个电极均位于所述发光二极管与朝向所述转移装置的第一端面向背设置的第二端面;A temporary substrate coated with a second adhesive layer is used to paste the light-emitting diodes generated on the original substrate at intervals to the temporary substrate. A diode and a second end face set back facing the first end face of the transfer device;
    剥离所述原生基板;Peeling off the native substrate;
    利用所述转移装置抓取所述发光二极管,以使得所述发光二极管剥离所述临时基板。The light emitting diode is grasped by the transfer device, so that the light emitting diode peels off the temporary substrate.
     To
    13.如权利要求12所述的巨量转移方法,其特征在于,剥离所述原生基板后,所述巨量转移方法还包括:13. The mass transfer method of claim 12, wherein after peeling off the native substrate, the mass transfer method further comprises:
    利用蚀刻装置去除所述发光二极管之间的所述第二黏着层。An etching device is used to remove the second adhesive layer between the light-emitting diodes.
     To
    14.如权利要求12所述的巨量转移方法,其特征在于,所述第二黏着层为热解胶,所述热解胶的粘性随温度的增加而减小。14. The mass transfer method of claim 12, wherein the second adhesive layer is a pyrolysis glue, and the viscosity of the pyrolysis glue decreases with increasing temperature.
     To
    15.如权利要求14所述的巨量转移方法,其特征在于,当利用所述转移装置抓取所述发光二极管时,所述巨量转移方法还包括:15. The mass transfer method of claim 14, wherein when the light-emitting diode is grasped by the transfer device, the mass transfer method further comprises:
    利用加热器对所述临时基板进行加热以减小所述第二黏着层的粘性。The temporary substrate is heated by a heater to reduce the viscosity of the second adhesive layer.
     To
    16.如权利要求9所述的巨量转移方法,其特征在于,将所述发光二极管转移至所述转移装置之前,所述巨量转移方法还包括:16. The mass transfer method of claim 9, wherein before transferring the light-emitting diodes to the transfer device, the mass transfer method further comprises:
    利用所述转移装置抓取间隔生成于原生基板的发光二极管,其中,所述发光二极管为垂直型,所述发光二极管的两个电极分别位于所述发光二极管朝向所述转移装置的第一端面和与所述第一端面相背设置的第二端面;The transfer device is used to capture the light-emitting diodes generated on the original substrate at intervals, wherein the light-emitting diodes are vertical, and the two electrodes of the light-emitting diodes are respectively located on the first end surface and the first end surface of the light-emitting diode facing the transfer device. A second end surface arranged opposite to the first end surface;
    剥离所述原生基板。Peel off the native substrate.
     To
    17.如权利要求12或16所述的巨量转移方法,其特征在于,所述剥离所述原生基板具体包括:17. The mass transfer method according to claim 12 or 16, wherein said peeling off said native substrate specifically comprises:
    利用镭射装置对所述原生基板进行镭射光照射以剥离所述原生基板。A laser device is used to irradiate the original substrate with laser light to peel off the original substrate.
     To
    18.如权利要求9所述的巨量转移方法,其特征在于,将所述发光二极管从所述转移装置选择吸附至所述显示背板,所述巨量转移方法还包括:18. The mass transfer method of claim 9, wherein selectively adsorbing the light-emitting diodes from the transfer device to the display backplane, and the mass transfer method further comprises:
    利用加热平台对所述显示背板进行加热以熔融所述固定点,以使得所述发光二极管固定于所述显示背板。A heating platform is used to heat the display backplane to melt the fixing points, so that the light-emitting diodes are fixed on the display backplane.
PCT/CN2019/130532 2019-12-31 2019-12-31 Mass transfer system and method for light-emitting diode WO2021134490A1 (en)

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