WO2021128975A1 - 一种紧凑型放大器供电端口静电保护电路 - Google Patents

一种紧凑型放大器供电端口静电保护电路 Download PDF

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WO2021128975A1
WO2021128975A1 PCT/CN2020/115907 CN2020115907W WO2021128975A1 WO 2021128975 A1 WO2021128975 A1 WO 2021128975A1 CN 2020115907 W CN2020115907 W CN 2020115907W WO 2021128975 A1 WO2021128975 A1 WO 2021128975A1
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electrostatic protection
protection circuit
port
power supply
circuit
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PCT/CN2020/115907
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English (en)
French (fr)
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夏冬
盖川
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南京米乐为微电子科技有限公司
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Publication of WO2021128975A1 publication Critical patent/WO2021128975A1/zh

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage

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  • the utility model relates to the field of chip electrostatic protection, in particular to an amplifier power supply port electrostatic protection circuit.
  • Electrostatic discharge is the main culprit that causes all electronic components or integrated circuit systems to cause excessive electrical stress (EOS: Electrical Over Stress) damage. Because static electricity usually has a very high instantaneous voltage (>several thousand volts), this kind of damage is devastating and permanent, and will cause the circuit to burn directly. Therefore, preventing electrostatic damage is the number one problem in all IC design and manufacturing.
  • Electrostatic protection devices have a great impact on radio frequency performance.
  • One of the most common anti-static structures includes a set of forward and reverse series respectively. Diode pairs connected in series. When the structure is in normal operation, the diode is in the off state and does not affect the circuit operation. When an instantaneous large electrostatic voltage enters the port, according to the positive and negative characteristics of the voltage, the positively connected diode and the reversely connected diode are respectively turned on and released Charge, so as to achieve the role of protecting the internal circuit.
  • this structure has many problems when used for power supply ports.
  • the forward conduction voltage of a gallium arsenide diode is generally +0.8V.
  • the bias voltage of the power supply port is generally between +1V and +10V. Taking +5V as an example, at least 7 diodes need to be connected in series.
  • the series connection of a large number of diodes greatly increases the chip area.
  • the anti-static level of the diode is proportional to the width of the diode. For designs that require a higher anti-static level, a large number of diodes in series will further increase the chip area and increase the cost.
  • the utility model provides a compact amplifier power supply port electrostatic protection circuit.
  • the utility model provides a compact amplifier power supply port electrostatic protection circuit, which includes a power port, a radio frequency port, and an electrostatic protection circuit between the power port and the radio frequency port; the power supply The port is connected to the radio frequency port through a power cord;
  • the electrostatic protection circuit includes a negative pressure electrostatic protection circuit P1, a positive pressure electrostatic protection circuit P3, and a positive voltage buffer circuit P2;
  • One end of the negative pressure electrostatic protection circuit P1 is connected to the power port via a power cord, and the other end is grounded;
  • One end of the positive voltage buffer circuit P2 is connected to the power port via a power cord, the other end is connected to one end of the positive voltage electrostatic protection circuit P3, and the other end of the positive voltage electrostatic protection circuit P3 is grounded.
  • the negative pressure electrostatic protection circuit is composed of a plurality of reversed diodes connected in series.
  • the positive voltage electrostatic protection circuit is composed of a number of positively connected diodes connected in series.
  • the electrostatic protection circuit and the radio frequency circuit connected through the radio frequency port are integrated on the same chip.
  • all the diodes in the electrostatic protection circuit have the same size.
  • the size of the diodes of the negative pressure electrostatic protection circuit and the positive pressure electrostatic protection circuit are the same.
  • the positive voltage buffer circuit includes a field effect tube HEMT1, a capacitor C1 and a resistor R1;
  • the drain stage of the field effect tube HEMT1 is connected to the power line, and the source stage is connected to the positive voltage electrostatic protection circuit;
  • One end of the capacitor C1 and one end of the resistor R1 are both connected to the gate of the field effect transistor HEMT1, the other end of the capacitor C1 is connected to the power line, and the other end of the resistor R1 is grounded.
  • the negative pressure electrostatic protection circuit is composed of 1 to 2 reverse-connected diodes connected in series.
  • the positive voltage electrostatic protection circuit is composed of 2 to 3 positively connected diodes in series.
  • the compact amplifier power supply port electrostatic protection circuit provided by the present invention has the following beneficial effects:
  • the utility model can be applied to the electrostatic protection of bias voltage ports of different voltage levels, can cover the commonly used power supply voltage range of radio frequency amplifiers, and greatly improves the versatility and practicability of the circuit; and the compact amplifier power supply provided by the utility model While ensuring performance, the port electrostatic protection circuit has the advantages of compact structure and small size, which greatly reduces the area of the chip and reduces the manufacturing cost.
  • Figure 1 is a schematic diagram of a diode-based electrostatic protection circuit in the prior art
  • Fig. 2 is a current simulation diagram of the diode electrostatic protection circuit of Fig. 1;
  • Figure 3 is a schematic diagram of the structure of the compact amplifier power supply port electrostatic protection circuit provided by the utility model
  • FIG. 4 is a schematic diagram of the circuit principle of one specific embodiment of the electrostatic protection circuit for the power supply port of the compact amplifier provided by the present invention.
  • Fig. 5 is a voltage simulation diagram of the electrostatic protection circuit of the power supply port of the compact amplifier of Fig. 4;
  • FIG. 6 is a current simulation diagram of the electrostatic protection circuit of the power supply port of the compact amplifier in FIG. 4.
  • the diode electrostatic protection circuit in the traditional prior art is shown in FIG. 1.
  • two sets of diode circuits connected in series are connected in the forward and reverse directions.
  • the diode is reversely connected to the circuit.
  • the voltage of the access point is equal to the drain voltage, and the diode does not conduct.
  • the electrostatic protection level is proportional to the smallest gate width in the series of diodes.
  • the reverse electrostatic protection usually only connects 1-2 diodes in series, namely D1 ⁇ D2, the width of the diode Determined by the electrostatic protection level required by the index.
  • the electrostatic protection circuit needs to be turned on when the positive pulse enters the circuit to release the charge; when the normal bias voltage is 5V, the diode cannot conduct. Because the drain voltage is 5V and the forward conduction voltage of the diode is 0.8V, the diode must be connected in series with at least 7 diodes, namely D3-D9.
  • the IV curve of the circuit is shown in Figure 2 (the abscissa is the power supply voltage and the ordinate is the total current consumed by the circuit). After more than 5V, the diode of the circuit is turned on, resulting in DC power consumption, which is no longer suitable for electrostatic protection. Circuit.
  • the circuit needs to be composed of at least 9 diodes (including 2 in the reverse electrostatic protection circuit and at least 7 in the positive voltage electrostatic protection circuit), and if the bias voltage is increased to 10V, at least 15 diodes are required.
  • an increase in area means an increase in cost, which is also not conducive to system miniaturization.
  • the compact amplifier power supply port electrostatic protection circuit provided by the present invention is shown in Figure 4, including a power port, a radio frequency port, and an electrostatic protection circuit located between the power port and the radio frequency port; wherein the power port passes through the power supply The cable is connected to the radio frequency port.
  • the electrostatic protection circuit includes a negative pressure electrostatic protection circuit P1, a positive pressure electrostatic protection circuit P3, and a positive voltage buffer circuit P2.
  • One end of the negative pressure electrostatic protection circuit P1 is connected to the power port via a power cord, and the other end is grounded.
  • One end of the positive voltage buffer circuit P2 is connected to the power port via a power cord, the other end is connected to one end of the positive voltage electrostatic protection circuit P3, and the other end of the positive voltage electrostatic protection circuit P3 is grounded. It can also be said that the positive voltage buffer circuit P2 is located between the power line and the positive voltage electrostatic protection circuit P3; one end of the positive voltage electrostatic protection circuit P3 is connected in series with the positive voltage buffer circuit P2, and the other end is grounded.
  • the negative pressure electrostatic protection circuit is composed of a number of reversed diodes connected in series.
  • the negative voltage electrostatic protection circuit is composed of 1 to 2 reversed diodes connected in series.
  • the positive voltage electrostatic protection circuit is composed of a number of positive diodes connected in series.
  • the positive voltage electrostatic protection circuit is composed of 2 to 3 positively connected diodes in series.
  • the electrostatic protection circuit and the radio frequency circuit connected through the radio frequency port are integrated on the same chip.
  • all the diodes in the electrostatic protection circuit have the same size.
  • the size of the diodes of the negative pressure electrostatic protection circuit and the positive pressure electrostatic protection circuit are the same. Under this structure, the circuit structure is reasonable, which is convenient for component selection, production and maintenance.
  • the reverse electrostatic protection circuit is composed of two series reverse diodes D10 ⁇ D11, one end Connect the power cord, one end is grounded; and the positive voltage electrostatic protection circuit is composed of three series forward diodes D12 ⁇ D14, one end is connected to the positive voltage buffer circuit, and the other end is grounded.
  • the positive voltage buffer circuit includes a field effect transistor HEMT1, a capacitor C1, and a resistor R1.
  • the drain stage of the field effect transistor HEMT1 is connected to the power line, and the source stage is connected to the positive voltage electrostatic protection circuit (the source stage of the field effect transistor HEMT1 in this embodiment is connected to the forward diode D12 in the positive voltage electrostatic protection circuit);
  • One end of C1 and one end of the resistor R1 are both connected to the gate of the field effect transistor HEMT1, the other end of the capacitor C1 is connected to the power line, and the other end of the resistor R1 is grounded.
  • one end of the capacitor C1 is connected to the gate of the field effect transistor HEMT1, and the other end is connected to the power line; one end of the resistor R1 is connected to the gate of the field effect transistor HEMT1, and the other end is grounded.
  • the size of HEMT1 is 4 ⁇ 50um, the drain stage is connected to the circuit power line, the gate is connected to R1 and C1, and the source stage is connected to a forward diode; the resistance of R1 is 3000 ohms, one end Connect to the grid of HEMT1, one end is grounded, and play a high-impedance loop for HEMT1; the capacitance of C1 is 2pF, one end is connected to the grid of HEMT1, and one end is connected to the power line for filtering.
  • the series diode circuit (namely D12-D14) in the positive voltage electrostatic protection circuit has one end connected to the source stage of HEMT1 and one end grounded.
  • the compact amplifier power supply port electrostatic protection circuit provided by the present invention reduces the number of positive diodes required by the positive voltage electrostatic protection circuit from more than 7 to 2 to 3 (increase in the positive voltage buffer circuit).
  • the size of the FET, capacitor and resistor is much smaller than the size of the ESD diode), which can greatly reduce the chip area; at the same time, it can completely cover the power supply voltage in the range of 1V to 10V commonly used by radio frequency amplifiers, which greatly improves the general purpose of the circuit Sexuality and practicality.

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Abstract

本申请公开了一种紧凑型放大器供电端口静电保护电路，其包括电源端口、射频端口，以及位于电源端口与射频端口之间的静电保护电路；所述电源端口通过电源线与射频端口连接；所述静电保护电路包括负压静电保护电路、正压静电保护电路和正压缓冲电路；其中负压静电保护电路一端经电源线与电源端口相连，另一端接地；其中正压缓冲电路一端经电源线与电源端口相连，另一端与正压静电保护电路的一端相连，正压静电保护电路的另一端接地。本申请可以覆盖射频放大器常用的供电电压范围，通用性好，且结构紧凑，尺寸小，极大地降低了芯片的面积。

Description

一种紧凑型放大器供电端口静电保护电路 技术领域
本实用新型涉及芯片静电保护领域，特别是涉及一种放大器供电端口静电保护电路。
背景技术
静电放电是造成所有电子元器件或集成电路系统造成过度电应力(EOS：Electrical Over Stress)破坏的主要元凶。因为静电通常瞬间电压非常高(＞几千伏)，所以这种损伤是毁灭性和永久性的，会造成电路直接烧毁。所以预防静电损伤是所有IC设计和制造的头号难题。
在射频电路中，静电保护的设计比较特殊，涉及到频率响应的问题，静电保护的器件对射频性能产生很大的影响，一种最常见的防静电结构包括一组分别正向串联和反向串联的二极管对。该结构在正常工作时，二极管处于关断状态，不影响电路工作，当有瞬时的较大静电电压进入端口时，根据电压的正负特性，正接的二极管和反接的二极管分别导通，释放电荷，从而实现保护内部电路的作用。但是，该结构用于供电端口存在很多问题。
砷化镓二极管的正向导通电压一般为+0.8V，对于正接的二极管，如果想要在正常工作的时候不导通，需要串联多个正向二极管，否则静电保护电路便会导通，产生不必要的功耗。对于砷化镓放大器，供电端口的偏置电压一般为+1V到+10V之间，以+5V为例，需要串联至少7个二极管，大量的二极管串联极大的增加了芯片面积。另外，二极管的防静电等级与二极管的宽度成正比，对于防静电等级要求更高的设计，串联大量二极管会进一步增大芯片面积，增加成本。以上这些问题亟待解决。
发明内容
发明目的：为了解决现有技术中的不足，本实用新型提供了一种紧凑型放大器供电端口静电保护电路。
技术方案：为解决上述技术问题，本实用新型提供的一种紧凑型放大器供电端口静电保护电路，其包括电源端口、射频端口，以及位于电源端口与射频端口之间的静电保护电路；所述电源端口通过电源线与射频端口连接；
所述静电保护电路包括负压静电保护电路P1、正压静电保护电路P3和正压缓冲电路P2；
其中负压静电保护电路P1一端经电源线与电源端口相连，另一端接地；
其中正压缓冲电路P2的一端经电源线与电源端口相连，另一端与正压静电保护保护电路P3的一端相连，正压静电保护保护电路P3的另一端接地。
优选的，所述负压静电保护电路由若干反接的二极管串联组成。
优选的，所述正压静电保护电路由若干正接的二极管串联组成。
进一步优选的，该静电保护电路与通过射频端口连接的射频电路集成在同一芯片上。
优选的，该静电保护电路中的所有二极管尺寸相同。
作为优选的，所述负压静电保护电路和正压静电保护电路的二极管尺寸相同。
进一步优选的，所述正压缓冲电路包括场效应管HEMT1，电容C1以及电阻R1；
其中场效应管HEMT1的漏级与电源线连接，源级与正压静电保护电路连接；
电容C1的一端及电阻R1的一端均与场效应管HEMT1的栅极连接，电容C1的另一端与电源线连接，电阻R1的另一端接地。
优选的，所述负压静电保护电路由1～2个反接的二极管串联组成。
进一步优选的，所述正压静电保护电路由2～3个正接的二极管串联组成。
有益效果：本实用新型提供的紧凑型放大器供电端口静电保护电路，与现有技术相比，具有如下有益效果：
本实用新型能够应用于不同电压等级的偏置电压端口静电防护，可以覆盖射频放大器常用的供电电压范围，极大的提高了电路的通用性和实用性；而且本实用新型提供的紧凑型放大器供电端口静电保护电路在保证性能的同时，具有结构紧凑，尺寸小的优点，极大地降低了芯片的面积，降低制造成本。
附图说明
图1为现有技术中基于二极管的静电保护电路原理图；
图2为图1的二极管静电保护电路的电流仿真图；
图3为本实用新型提供的紧凑型放大器供电端口静电保护电路的结构示意图；
图4为本实用新型提供的紧凑型放大器供电端口静电保护电路的其中一种具体实施例的电路原理示意图；
图5为图4的紧凑型放大器供电端口静电保护电路的电压仿真图；
图6为图4的紧凑型放大器供电端口静电保护电路的电流仿真图。
具体实施方式
下面结合实施例和附图对本实用新型做进一步的详细说明，以下实施列对本实用新型不构成限定。
以砷化镓放大器的漏级供电端口的静电保护电路设计为例，说明本实用新型的具体方案、工作原理及有益效果。假定正常工作下，漏级电压为+5V，需要提供正压和负压两组静电防护。
传统现有技术中的二极管静电保护电路如图1所示，在需要静电保护的端口，分别正向和反向接入两组串联的二极管电路。对于负电的静电保护，二极管反向接入电路，正常工作时接入点电压等于漏级电压，二极管不导通，当负电进入端口，二极管开启，瞬时电荷通过该回路得到释放，从而保护内部电路，静电防护等级与该组串联二极管中的最小栅宽成正比。通过增加串联二极管数量，可以降低引入的等效寄生电容，因为本应用为电源端口，寄生电容影响不大，因此反向静电保护通常只串联1-2个二极管，即D1～D2，二极管的宽度由指标要求的静电保护等级而定。而对于正电的静电保护，静电保护电路需要在正电脉冲进入电路时导通，释放电荷；在正常偏压5V的时候，二极管不能导通。因为漏级电压为5V，二极管的正向导通电压为0.8V，因此二极管必须至少串联7个二极管，即D3～D9。该电路的 IV曲线如图2(横坐标为电源电压，纵坐标为该电路消耗的总电流)所示，在大于5V以后，该电路二极管打开，产生直流功耗，不再适于作为静电保护电路。综上所述，该电路至少需要由9个二极管(包括反向静电保护电路中的2个和正压静电保护电路中的至少7个)组成，而如果偏置电压增大至10V，则至少需要15个二极管。对于芯片产品，面积增大意味着成本增高，也不利于系统小型化。
为了解决上述问题，本实用新型提供的紧凑型放大器供电端口静电保护电路如图4所示，包括电源端口、射频端口，以及位于电源端口与射频端口之间的静电保护电路；其中电源端口通过电源线与射频端口连接。该静电保护电路包括负压静电保护电路P1、正压静电保护电路P3和正压缓冲电路P2。
其中负压静电保护电路P1一端经电源线与电源端口相连，另一端接地。
其中正压缓冲电路P2的一端经电源线与电源端口相连，另一端与正压静电保护保护电路P3的一端相连，正压静电保护保护电路P3的另一端接地。也可以说是正压缓冲电路P2位于电源线与正压静电保护保护电路P3之间；正压静电保护电路P3一端与正压缓冲电路P2串联，另一端接地。
其中负压静电保护电路由若干反接的二极管串联组成。在本实施例中，该负压静电保护电路由1～2个反接的二极管串联组成。
其中正压静电保护电路由若干正接的二极管串联组成。在本实施例中，该正压静电保护电路由2～3个正接的二极管串联组成。
由于具有结构紧凑，尺寸小的优点，在某些优选实施例中，该静电保护电路与通过射频端口连接的射频电路集成在同一芯片上。在某些优选实施例中，该静电保护电路中的所有二极管尺寸相同。在某些优选实施例中，所述负压静电保护电路和正压静电保护电路的二极管尺寸相同。在此结构下，电路结构合理，便于元器件选型、生产和维护。
本实用新型提供的紧凑型放大器供电端口静电保护电路的其中一种具体实施例如图4所示，在该静电保护电路中，反向静电保护电路由两个串联反向二极管D10～D11组成，一端接电源线，一端接地；而正压静电保护电路由三个串联正向二极管D12～D14组成，一端接正压缓冲电路，一端接地。
在该静电保护电路中，正压缓冲电路包括场效应管HEMT1，电容C1，以及电阻R1。其中场效应管HEMT1的漏级与电源线连接，源级与正压静电保护电路连接(本实施例中场效应管HEMT1的源级与正压静电保护电路中的正向二极管D12连接)；电容C1的一端及电阻R1的一端均与场效应管HEMT1的栅极连接，电容C1的另一端与电源线连接，电阻R1的另一端接地。也即电容C1的一端与场效应管HEMT1的栅极连接，另一端与电源线连接；电阻R1的一端与场效应管HEMT1的栅极连接，另一端接地。
在如图4所示的具体实施例中，其中HEMT1尺寸为4×50um，漏级接电路电源线，栅极与R1、C1相连，源级接正向二极管；R1阻值为3000欧姆，一端接HEMT1的栅极，一端接地，对HEMT1起到高阻回路作用；C1的电容容值为2pF，一端接HEMT1的栅极，一端接电源线，起到滤波作用。正压静电保护电路中的串联二极管电路(即D12-D14)，一端接HEMT1的源级，一端接地。
对该电路进行直流仿真的结果如图5所示(横坐标为电源电压Vd，纵坐标为HEMT1的源级电压Vp)：当Vd大于1V以后，随着Vd增大，场效应管源级Vp点的电压增长比较缓慢。当 Vd＝10V时，Vp等于2.2V，而三级二极管串联电路的开启电压为2.4V。因此该静电保护电路对于Vd范围在1V到10V的电源偏置端口，都可以正常工作。图6的仿真结果显示(横坐标为电源电压Vd，纵坐标为该电路消耗的总电流)，该静电保护电路的功耗非常低，对于+5V供电，直流电流小于0.001A。同时当Vd＝5V时，Vp约等于1.3V，而两级二极管串联电路的开启电压为1.6V，也即当Vd＝5V时，该正压静电保护电路由2个正接的二极管串联组成即可。
由此可见，本实用新型提供的一种紧凑型放大器供电端口静电保护电路将正压的静电保护电路所需的大量正接二极管数量从7个以上降低为2～3个(正压缓冲电路里增加的场效应管、电容以及电阻的尺寸远小于ESD二极管的尺寸)，可极大降低芯片的面积；同时可以完全覆盖射频放大器常用的1V到10V范围内供电电压，极大地提高了该电路的通用性和实用性。
以上仅是本实用新型的优选实施方式，应当指出以上实施列对本实用新型不构成限定，相关工作人员在不偏离本实用新型技术思想的范围内，所进行的多样变化和修改，均落在本实用新型的保护范围内。

Claims (9)

  1. 一种紧凑型放大器供电端口静电保护电路，其特征在于：包括电源端口、射频端口，以及位于电源端口与射频端口之间的静电保护电路；所述电源端口通过电源线与射频端口连接；
    所述静电保护电路包括负压静电保护电路P1、正压静电保护电路P3和正压缓冲电路P2；
    其中负压静电保护电路P1一端经电源线与电源端口相连，另一端接地；
    其中正压缓冲电路P2的一端经电源线与电源端口相连，另一端与正压静电保护保护电路P3的一端相连，正压静电保护保护电路P3的另一端接地。
  2. 根据权利要求1所述的紧凑型放大器供电端口静电保护电路，其特征在于：所述负压静电保护电路由若干反接的二极管串联组成。
  3. 根据权利要求1所述的紧凑型放大器供电端口静电保护电路，其特征在于：所述正压静电保护电路由若干正接的二极管串联组成。
  4. 根据权利要求1所述的紧凑型放大器供电端口静电保护电路，其特征在于：该静电保护电路与通过射频端口连接的射频电路集成在同一芯片上。
  5. 根据权利要求1所述的紧凑型放大器供电端口静电保护电路，其特征在于：该静电保护电路中的所有二极管尺寸相同。
  6. 根据权利要求1所述的紧凑型放大器供电端口静电保护电路，其特征在于：所述负压静电保护电路和正压静电保护电路的二极管尺寸相同。
  7. 根据权利要求1所述的紧凑型放大器供电端口静电保护电路，其特征在于：所述正压缓冲电路包括场效应管HEMT1，电容C1以及电阻R1；
    其中场效应管HEMT1的漏级与电源线连接，源级与正压静电保护电路连接；
    电容C1的一端及电阻R1的一端均与场效应管HEMT1的栅极连接，电容C1的另一端与电源线连接，电阻R1的另一端接地。
  8. 根据权利要求1所述的紧凑型放大器供电端口静电保护电路，其特征在于：所述负压静电保护电路由1～2个反接的二极管串联组成。
  9. 根据权利要求1所述的紧凑型放大器供电端口静电保护电路，其特征在于：所述正压静电保护电路由2～3个正接的二极管串联组成。
PCT/CN2020/115907 2019-12-28 2020-09-17 一种紧凑型放大器供电端口静电保护电路 WO2021128975A1 (zh)

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