WO2021128874A1 - Internal memory interface write-leveling control method and device - Google Patents

Internal memory interface write-leveling control method and device Download PDF

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WO2021128874A1
WO2021128874A1 PCT/CN2020/109396 CN2020109396W WO2021128874A1 WO 2021128874 A1 WO2021128874 A1 WO 2021128874A1 CN 2020109396 W CN2020109396 W CN 2020109396W WO 2021128874 A1 WO2021128874 A1 WO 2021128874A1
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sampling
delay step
sampling signal
memory interface
delay
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Chinese (zh)
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叶佳星
傅祥
欧阳志光
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晶晨半导体(上海)股份有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0602Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/061Improving I/O performance
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0628Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0655Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
    • G06F3/0659Command handling arrangements, e.g. command buffers, queues, command scheduling
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601Interfaces specially adapted for storage systems
    • G06F3/0668Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671In-line storage system
    • G06F3/0673Single storage device
    • G06F3/0679Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]

Definitions

  • the present invention relates to the field of communication technology, and in particular to a method and device for controlling write balance of a memory interface.
  • Write leveling is an indicator established by the Electronics Industry Association (JEDEC).
  • JEDEC Electronics Industry Association
  • the so-called write balance means that the sampling data clock in the data sending and writing direction and the DRAM (Dynamic Random Access Memory) external bus working clock must be in the same phase state (for example, the tDQSS indicator in the DDR4 standard JEDEC79-4B), so that the data is being written When entering, the sampling clock and data in the memory can be aligned with the bus working clock, so as to ensure that the DDR (Double Data Rate) memory can write data correctly.
  • DDR Dynamic Random Access Memory
  • the best value obtained (such as sampling data clock) can only be used for a single application scenario, and cannot adapt to different board-level wiring styles, shielding jitter, noise, etc. Interference causes delay differences, and the application scenarios have strong limitations. Since the write balance training precedes other read and write training, if the wrong optimal value is obtained, it will cause errors in the training of other parameters of the later stage, which will affect the subsequent read and write process of the entire DDR interface, and eventually lead to read and write failures.
  • a memory interface write equalization control method and device aiming at strong adaptive ability and shielding interference from jitter, noise, etc. is provided.
  • the present invention provides a method for controlling write balance of a memory interface, which includes:
  • the write equalization delay step of the sampling signal is determined according to the location of the region.
  • sending the sampling signal to the memory device at a preset delay step includes:
  • the sampling signal is sent to the memory device until the delay step reaches a second preset length.
  • generating the sampling information of the first preset length according to the effective level of the sampling signal corresponding to each delay step includes:
  • N samplings accumulate the sampling times of the same level value, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
  • obtaining the location of the area where the sum of the effective levels in the sampling information is the largest includes:
  • determining the write equalization delay step of the sampling signal according to the location of the region includes:
  • the area position is an area position where the starting point is an effective level of 1, and the write equalization phase value of the sampling signal is obtained according to the delay step of the sampling signal corresponding to the starting point of the area position.
  • the present invention also provides a control device for writing balance of a memory interface, including:
  • the control unit is used to send the sampling signal to the memory device with a preset delay step
  • a generating unit configured to generate sampling information of a first preset length according to the effective level of the sampling signal corresponding to each delay step
  • An acquiring unit configured to acquire the location of the area where the sum of the effective levels in the sampling information is the largest;
  • the determining unit is configured to determine the write equalization delay step of the sampling signal according to the location of the region.
  • control unit is configured to start from the initial position of the sampling signal, each time a preset delay step is increased, and send the sampling signal to the memory device until the delay step reaches the second preset length.
  • the generating unit includes:
  • the sampling module is used to sample the sampling signal corresponding to each delay step N times to obtain the level value of each sampling; where N is an odd number;
  • the processing module is used to accumulate the sampling times of the same level value in N sampling times, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
  • the combination module is configured to combine the effective level of the sampling signal corresponding to each delay step according to the sequence of the delay step to generate the sampling information of the first preset length.
  • the acquiring unit is configured to acquire, in the sampling information, the location of the area where the sum of the effective levels of the third preset length is the largest.
  • the determining unit is configured to obtain the write equalization phase value of the sampling signal according to the delay step of the sampling signal corresponding to the starting point of the area position; the area position being the starting point is valid The location of the area where the level is 1.
  • the memory interface write equalization control method and device in the process of controlling the sampling signal to be sent to the memory device at a preset delay step, based on the effective level of the sampling signal corresponding to each delay step , Generate the sampling information of the first preset length; analyze the sampling information, and determine the write equalization phase value of the sampling signal according to the location of the area where the sum of the effective levels in the sampling information is the largest, so as to shield the sampling process due to jitter and noise Wait for the sampling error caused by interference, and then determine the best delay position of the sampled signal, with strong adaptability.
  • FIG. 1 is a flowchart of an embodiment of a method for controlling write balance of a memory interface according to the present invention
  • FIG. 2 is a flowchart of an embodiment of generating sampling information according to the effective level of the sampling signal according to the present invention
  • FIG. 3 is a block diagram of an embodiment of the control device for writing balance of a memory interface according to the present invention
  • Fig. 4 is a block diagram inside the generating unit of the present invention.
  • the data acquisition method defined by JEDEC for the write equalization algorithm is: DRAM enters the specified DRAM write equalization training mode by configuring the mode register of DRAM, and then DRAM automatically uses the rising edge of the data sampling clock (write dqs) to correct the system bus clock (clk). ) Sampling, the voltage level sampled is fed back and output from the data line (dq).
  • the general algorithm in the industry is: increase the delay phase of the data sampling clock through continuous linear adjustment, until the final sampled level on the data line changes from a low level to a high level for the first time, that is, the data sampling clock and the system bus The clock reaches the same rising edge phase, so that the optimal phase value of the sampling clock for writing the balanced data is obtained.
  • the method of increasing the delay phase of the data sampling clock by linear adjustment is only suitable for situations where the waveform quality is very good. Since signal acquisition requires a certain signal retention time and signal retention threshold level, when the waveform quality is better and the signal rises and falls faster, the acquired signal is correct. But when the signal begins to deteriorate, the collected signal is very error-tolerant; for the differences in PCB (printed circuit board) design, the board-level signals are different, so the system bus clock signal is prone to have a slow slope or collapse caused by signal reflection. The signal is also very error-tolerant.
  • the false acquisition of the falling edge as the rising edge is mainly because the amplitude of the data sampling clock relative to the reference level of the comparator is not large enough when the falling edge of the falling edge crosses the intermediate level, and the threshold level is not fully reached, and the metastable state occurs, so it is easy Data output errors due to noise interference will lead to edge judgment errors.
  • the present invention proposes a method that can avoid the influence of step, collapse and metastable state on sampling, can be applied to different scenarios, and can A control method and device for memory interface writing equalization that ensure the accuracy of the sampled signal.
  • the present invention will be further described below in conjunction with the drawings and specific embodiments, but it is not a limitation of the present invention.
  • FIG. 1 it is a schematic flow chart of a method for controlling write balance of a memory interface according to a preferred embodiment of the present invention. As can be seen from the figure, the method for controlling write balance of a memory interface provided in this embodiment mainly It includes the following steps:
  • the memory device may be a dynamic random access memory, or a double-rate synchronous dynamic random access memory.
  • the sampling signal in this embodiment is a signal that the data sampling clock (dqs) reaches the memory device.
  • step S1 includes:
  • the sampling signal is sent to the memory device until the delay step reaches a second preset length.
  • the second preset length is greater than the cycle length CLK of the sampling signal.
  • the second preset length may be 1.5 CLK cycles, or 2 CLK cycles.
  • the preset delay step is 1/64CLK cycle length
  • the second preset length is 2 CLK cycles
  • the delay step of the sampling signal is gradually increased, and a total of 128 rounds of data are collected to realize the coverage of 2 CLKs.
  • Periodic sampling signal Theoretically corresponding to the analysis of the standard waveform, a high-level pulse can be collected within 1.5 CLK cycles.
  • the extension length is appropriate and the second preset length is set to 2 CLK Period to facilitate subsequent analysis of the sampled signal.
  • the first preset length may be 2 CLK cycles.
  • step S2 may include:
  • the effective level corresponding to each delay step is combined according to the sequence of the delay step, so as to obtain the sampling information of the length of 2 CLK cycles.
  • step S2 multiple sampling is performed for each delay step, and a level value with a high probability is extracted as an effective level, so as to avoid affecting the accuracy of the sampling signal due to poor waveform quality.
  • step S3 is to obtain, in the sampling information, the position of the area where the sum of the effective levels of the third preset length is the largest.
  • the third preset length is 0.5 CLK cycle length.
  • step S4 the region position is the region position whose starting point is the effective level of 1, and the writing of the sample signal is obtained according to the delay step of the sampling signal corresponding to the starting point of the region position. Enter the balanced phase value.
  • step S4 the area position is the starting point or the area position where the effective level is 0.
  • the sampling information of the first preset length is generated based on the effective level of the sampling signal corresponding to each delay step; Analyze the sampling information, and determine the write equalization phase value of the sampling signal according to the location of the area where the sum of the effective levels in the sampling information is the largest, so as to shield the sampling error caused by jitter, noise and other interference during the sampling process, and then determine the sampling signal The best time delay position, strong adaptability.
  • the control method of memory interface write balance can automatically adapt to the delay difference caused by different board-level wiring styles and automatically eliminate noise. It can be widely used in different DDR standards (such as: DDR3, DDR4, LPDDR3, LPDDR4, etc.), with Efficient, accurate, and self-adaptive.
  • the present invention also provides a memory interface write equalization control device 1 which may include: a control unit 11, a generation unit 12, an acquisition unit 13, and a determination unit 14;
  • the control unit 11 is configured to send the sampling signal to the memory device in a preset delay step
  • the memory device may be a dynamic random access memory, or a double-rate synchronous dynamic random access memory.
  • the sampling signal in this embodiment is a signal that the data sampling clock (dqs) reaches the memory device.
  • the control unit 11 is configured to start from the initial position of the sampling signal, each time a preset delay step is increased, and send the sampling signal to the memory device until the delay step reaches a second preset length.
  • the second preset length is greater than the cycle length CLK of the sampling signal.
  • the second preset length may be 1.5 CLK cycles, or 2 CLK cycles.
  • the preset delay step is 1/64CLK cycle length
  • the second preset length is 2 CLK cycles
  • the delay step of the sampling signal is gradually increased, and a total of 128 rounds of data are collected to realize the coverage of 2 CLKs.
  • Periodic sampling signal Theoretically corresponding to the analysis of the standard waveform, a high-level pulse can be collected within 1.5 CLK cycles.
  • the extension length is appropriate and the second preset length is set to 2 CLK Period to facilitate subsequent analysis of the sampled signal.
  • the generating unit 12 is configured to generate sampling information of a first preset length according to the effective level of the sampling signal corresponding to each delay step;
  • the first preset length may be 2 CLK cycles.
  • the generating unit 12 may include: a sampling module 121, a processing module 122, and a combining module 123;
  • the processing module 122 is configured to accumulate the sampling times of the same level value in N sampling times, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
  • the combination module 123 is configured to combine the effective levels of the sampling signals corresponding to each of the delay steps according to the sequence of the delay steps to generate the first preset length of sampling information.
  • the effective level corresponding to each delay step is combined according to the sequence of the delay step, so as to obtain the sampling information of the length of 2 CLK cycles.
  • a level value with a high probability is extracted as an effective level, so as to avoid affecting the accuracy of the sampled signal when the waveform quality is not good.
  • the acquiring unit 13 is configured to acquire the location of the area where the sum of the effective levels in the sampling information is the largest;
  • the acquiring unit 13 is configured to acquire, from the sampling information, the location of the area where the sum of the effective levels of the third preset length is the largest.
  • the third preset length is 0.5 CLK cycle length.
  • the determining unit 14 is configured to determine the write equalization delay step of the sampling signal according to the location of the region.
  • the determining unit 14 is configured to obtain the write equalization phase value of the sampling signal according to the delay step of the sampling signal corresponding to the starting point of the area position; the area position is the starting point and the effective level Is the area position of 1.
  • the area position is the starting point or the area position where the effective level is zero.
  • the sampling information of the first preset length is generated based on the effective level of the sampling signal corresponding to each delay step; Analyze the sampling information, and determine the write equalization phase value of the sampling signal according to the location of the area where the sum of the effective levels in the sampling information is the largest, so as to shield the sampling error caused by jitter, noise and other interference during the sampling process, and then determine the sampling signal The best time delay position, strong adaptability.
  • the invention can adapt to different PCB design styles at the same time, adapt to the delay difference caused by the data sampling clock and the bus clock caused by different routing, and can also resist the distortion of the routing signal very well, which greatly simplifies the PCB routing design. Pressure, and can maximize the satisfaction of the write equalization index parameters defined by JEDEC, so that the relevant front-end performance and stability and reliability of the DDR system are stabilized.

Abstract

Provided are an internal memory interface write-leveling control method and device, belonging to the technical field of communications. In the internal memory interface write-leveling control method and device, during the process of controlling a sampling signal to be sent to an internal memory device at a preset delay step, on the basis of the effective level of the sampling signal corresponding to each delay step, sampling information of a first preset length is generated; the sampling information is analyzed, and a write-leveling phase value of the sampling signal is determined according to the location of the region where the sum of the effective levels in the sampling information is the largest, thus sampling errors caused by jitter, noise, and other interference in the sampling process are shielded, and the optimal delay position of the sampling signal is determined, and adaptability is strong.

Description

内存接口写入均衡的控制方法及装置Control method and device for writing balance of memory interface 技术领域Technical field
本发明涉及通信技术领域,尤其涉及一种内存接口写入均衡的控制方法及装置。The present invention relates to the field of communication technology, and in particular to a method and device for controlling write balance of a memory interface.
背景技术Background technique
写入均衡(write leveling)是电子工业协会(JEDEC)制定的一项指标。所谓写入均衡是指在数据发送写方向的采样数据时钟和DRAM(动态随机存取存储器)外部总线工作时钟必须处于同相位状态(例如DDR4标准JEDEC79-4B中的tDQSS指标),以便数据在写入时能在存储器内进行采样时钟和数据均相对总线工作时钟进行对齐,从而保证DDR(Double Data Rate,双倍速率)存储器能够正确的写入数据。Write leveling is an indicator established by the Electronics Industry Association (JEDEC). The so-called write balance means that the sampling data clock in the data sending and writing direction and the DRAM (Dynamic Random Access Memory) external bus working clock must be in the same phase state (for example, the tDQSS indicator in the DDR4 standard JEDEC79-4B), so that the data is being written When entering, the sampling clock and data in the memory can be aligned with the bus working clock, so as to ensure that the DDR (Double Data Rate) memory can write data correctly.
目前在产品生产过程中,为了达到写入均衡这一指标,获取的最佳值(如:采样数据时钟)只能针对单一的应用场景,无法适应不同板级走线风格,屏蔽抖动、噪声等干扰,造成延时差异,应用场景的局限性强。由于写入均衡训练在其它读写训练之前,若获取到错误的最佳值会导致后级其它参数的训练出错,从而会影响整个DDR接口的后续读写过程,最终导致读写失败。At present, in the production process of the product, in order to achieve the indicator of write balance, the best value obtained (such as sampling data clock) can only be used for a single application scenario, and cannot adapt to different board-level wiring styles, shielding jitter, noise, etc. Interference causes delay differences, and the application scenarios have strong limitations. Since the write balance training precedes other read and write training, if the wrong optimal value is obtained, it will cause errors in the training of other parameters of the later stage, which will affect the subsequent read and write process of the entire DDR interface, and eventually lead to read and write failures.
发明内容Summary of the invention
针对现有写入均衡训练易受到抖动、噪声等干扰的问题,现提供一种旨在自适应能力强,可屏蔽抖动、噪声等干扰的内存接口写入均衡的控制方法 及装置。In view of the problem that the existing write equalization training is susceptible to interference from jitter, noise, etc., a memory interface write equalization control method and device aiming at strong adaptive ability and shielding interference from jitter, noise, etc. is provided.
本发明提供了一种内存接口写入均衡的控制方法,包括:The present invention provides a method for controlling write balance of a memory interface, which includes:
将采样信号以预设延时步进发送至内存装置;Send the sampling signal to the memory device with a preset delay step;
根据每一延时步进对应的所述采样信号的有效电平,生成第一预设长度的采样信息;Generating sampling information of a first preset length according to the effective level of the sampling signal corresponding to each delay step;
获取所述采样信息中有效电平之和最大的区域位置;Acquiring the location of the area where the sum of the effective levels in the sampling information is the largest;
根据所述区域位置确定所述采样信号的写入均衡延时步进。The write equalization delay step of the sampling signal is determined according to the location of the region.
优选的,将采样信号以预设延时步进发送至内存装置,包括:Preferably, sending the sampling signal to the memory device at a preset delay step includes:
从所述采样信号的初始位置起始,每次增加预设延时步进,将所述采样信号发送至内存装置,直至延时步进达到第二预设长度。Starting from the initial position of the sampling signal, each time a preset delay step is increased, the sampling signal is sent to the memory device until the delay step reaches a second preset length.
优选的,根据每一延时步进对应的所述采样信号的有效电平,生成第一预设长度的采样信息,包括:Preferably, generating the sampling information of the first preset length according to the effective level of the sampling signal corresponding to each delay step includes:
对每一延时步进对应的采样信号进行N次采样,获取每一次采样的电平值;其中,N为奇数;Sampling the sampling signal corresponding to each delay step N times to obtain the level value of each sampling; where N is an odd number;
在N次采样中,将相同电平值的采样次数累加,将大于(N-1)/2的累加采样次数对应的电平值作为有效电平;In N samplings, accumulate the sampling times of the same level value, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
依据所述延时步进的顺序将每一所述延时步进对应的所述采样信号的有效电平组合,生成所述第一预设长度的采样信息。Combining the effective levels of the sampling signals corresponding to each of the delay steps according to the sequence of the delay steps to generate the sampling information of the first preset length.
优选的,获取所述采样信息中有效电平之和最大的区域位置,包括:Preferably, obtaining the location of the area where the sum of the effective levels in the sampling information is the largest includes:
在所述采样信息中获取第三预设长度的有效电平之和最大的区域位置。Acquire the area position where the sum of the effective levels of the third preset length is the largest in the sampling information.
优选的,根据所述区域位置确定所述采样信号的写入均衡延时步进,包括:Preferably, determining the write equalization delay step of the sampling signal according to the location of the region includes:
所述区域位置为起始点为有效电平为1的区域位置,根据所述区域位置的起始点对应的所述采样信号的延时步进,获取所述采样信号的写入均衡相位值。The area position is an area position where the starting point is an effective level of 1, and the write equalization phase value of the sampling signal is obtained according to the delay step of the sampling signal corresponding to the starting point of the area position.
本发明还提供了一种内存接口写入均衡的控制装置,包括:The present invention also provides a control device for writing balance of a memory interface, including:
控制单元,用于将采样信号以预设延时步进发送至内存装置;The control unit is used to send the sampling signal to the memory device with a preset delay step;
生成单元,用于根据每一延时步进对应的所述采样信号的有效电平,生成第一预设长度的采样信息;A generating unit, configured to generate sampling information of a first preset length according to the effective level of the sampling signal corresponding to each delay step;
获取单元,用于获取所述采样信息中有效电平之和最大的区域位置;An acquiring unit, configured to acquire the location of the area where the sum of the effective levels in the sampling information is the largest;
确定单元,用于根据所述区域位置确定所述采样信号的写入均衡延时步进。The determining unit is configured to determine the write equalization delay step of the sampling signal according to the location of the region.
优选的,所述控制单元用于从所述采样信号的初始位置起始,每次增加预设延时步进,将所述采样信号发送至内存装置,直至延时步进达到第二预设长度。Preferably, the control unit is configured to start from the initial position of the sampling signal, each time a preset delay step is increased, and send the sampling signal to the memory device until the delay step reaches the second preset length.
优选的,所述生成单元包括:Preferably, the generating unit includes:
采样模块,用于对每一延时步进对应的采样信号进行N次采样,获取每一次采样的电平值;其中,N为奇数;The sampling module is used to sample the sampling signal corresponding to each delay step N times to obtain the level value of each sampling; where N is an odd number;
处理模块,用于在N次采样中,将相同电平值的采样次数累加,将大于(N-1)/2的累加采样次数对应的电平值作为有效电平;The processing module is used to accumulate the sampling times of the same level value in N sampling times, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
组合模块,用于依据所述延时步进的顺序将每一所述延时步进对应的所述采样信号的有效电平组合,生成所述第一预设长度的采样信息。The combination module is configured to combine the effective level of the sampling signal corresponding to each delay step according to the sequence of the delay step to generate the sampling information of the first preset length.
优选的,所述获取单元用于在所述采样信息中获取第三预设长度的有效电平之和最大的区域位置。Preferably, the acquiring unit is configured to acquire, in the sampling information, the location of the area where the sum of the effective levels of the third preset length is the largest.
优选的,所述确定单元用于根据所述区域位置的起始点对应的所述采样信号的延时步进,获取所述采样信号的写入均衡相位值;所述区域位置为起始点为有效电平为1的区域位置。Preferably, the determining unit is configured to obtain the write equalization phase value of the sampling signal according to the delay step of the sampling signal corresponding to the starting point of the area position; the area position being the starting point is valid The location of the area where the level is 1.
上述技术方案的有益效果:The beneficial effects of the above technical solutions:
本技术方案中,内存接口写入均衡的控制方法及装置,在控制采样信号以预设延时步进发送至内存装置的过程中,基于每一延时步进对应的采样信号的有效电平,生成第一预设长度的采样信息;对采样信息进行分析,根据采样信息中有效电平之和最大的区域位置确定采样信号的写入均衡相位值,从而屏蔽在采样过程中因抖动、噪声等干扰造成的采样错误,进而确定采样信号的最佳 延时位置,自适应性强。In this technical solution, the memory interface write equalization control method and device, in the process of controlling the sampling signal to be sent to the memory device at a preset delay step, based on the effective level of the sampling signal corresponding to each delay step , Generate the sampling information of the first preset length; analyze the sampling information, and determine the write equalization phase value of the sampling signal according to the location of the area where the sum of the effective levels in the sampling information is the largest, so as to shield the sampling process due to jitter and noise Wait for the sampling error caused by interference, and then determine the best delay position of the sampled signal, with strong adaptability.
附图说明Description of the drawings
图1为本发明所述的内存接口写入均衡的控制方法的一种实施例的流程图;FIG. 1 is a flowchart of an embodiment of a method for controlling write balance of a memory interface according to the present invention;
图2为本发明根据采样信号的有效电平生成采样信息的一种实施例的流程图;2 is a flowchart of an embodiment of generating sampling information according to the effective level of the sampling signal according to the present invention;
图3为本发明所述的内存接口写入均衡的控制装置的一种实施例的模块图;FIG. 3 is a block diagram of an embodiment of the control device for writing balance of a memory interface according to the present invention;
图4为本发明所述生成单元内部的模块图。Fig. 4 is a block diagram inside the generating unit of the present invention.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
对于写入均衡算法JEDEC定义的数据采集方式为:通过配置DRAM的模式寄存器使DRAM进入规定的DRAM写入均衡训练模式,之后DRAM自动使用数据采样时钟(write dqs)上升沿对系统总线时钟(clk)进行采样,将采样到的电压电平从数据线(dq)上反馈输出。The data acquisition method defined by JEDEC for the write equalization algorithm is: DRAM enters the specified DRAM write equalization training mode by configuring the mode register of DRAM, and then DRAM automatically uses the rising edge of the data sampling clock (write dqs) to correct the system bus clock (clk). ) Sampling, the voltage level sampled is fed back and output from the data line (dq).
业界的普遍算法为:通过不断的线性调整增加数据采样时钟的延时相位,直至最终采样到数据线上的电平第一次从低电平变到高电平,即数据采样时钟和系统总线时钟达到了相同上升沿相位,从而获取到写入均衡数据采样时 钟的最佳相位值。The general algorithm in the industry is: increase the delay phase of the data sampling clock through continuous linear adjustment, until the final sampled level on the data line changes from a low level to a high level for the first time, that is, the data sampling clock and the system bus The clock reaches the same rising edge phase, so that the optimal phase value of the sampling clock for writing the balanced data is obtained.
然而,实际的情况下,通过线性调整增加数据采样时钟的延时相位的方法仅仅适合于波形质量非常好的情况。由于信号采集需要一定的信号保持时间以及信号保持阈值电平,当波形质量比较好,信号上升下降速率较快时,采集的信号是正确的。但当信号开始恶化时,采集的信号很容出错;对于不同PCB(印刷电路板)设计的差异,板级信号不同,因此系统总线时钟信号容易存在斜率很慢或者信号反射致使的塌陷情况,采集的信号也很容出错。However, in actual situations, the method of increasing the delay phase of the data sampling clock by linear adjustment is only suitable for situations where the waveform quality is very good. Since signal acquisition requires a certain signal retention time and signal retention threshold level, when the waveform quality is better and the signal rises and falls faster, the acquired signal is correct. But when the signal begins to deteriorate, the collected signal is very error-tolerant; for the differences in PCB (printed circuit board) design, the board-level signals are different, so the system bus clock signal is prone to have a slow slope or collapse caused by signal reflection. The signal is also very error-tolerant.
由于信号采集需要一定的信号保持时间以及信号保持阈值电平,当波形质量开始恶化时,就容易出现电平亚稳态的判决错误,当数据采样时钟波形由于整个信号传输路径不好产生信号台阶现象,就可能导致采样到错误的小台阶的上升沿的过程。当信号上升下降速率比较慢时,甚至会出现将下降沿错误的采集成上升沿的情况。将下降沿错误的采集成上升沿主要是由于数据采样时钟在下降沿跨越中间电平时其相对比较器的参考电平的幅度不够大,没有完全达到阈值电平,出现亚稳态,因此很容易受到噪声干扰出现数据输出错误,此时就会导致边缘判断错误。Since signal acquisition requires a certain signal retention time and signal retention threshold level, when the quality of the waveform begins to deteriorate, it is easy to make a level metastable judgment error. When the data sampling clock waveform is not good due to the entire signal transmission path, a signal step will occur. Phenomenon, it may lead to the process of sampling the rising edge of the wrong small step. When the signal rise and fall rate is relatively slow, there may even be a situation where the falling edge is incorrectly collected as a rising edge. The false acquisition of the falling edge as the rising edge is mainly because the amplitude of the data sampling clock relative to the reference level of the comparator is not large enough when the falling edge of the falling edge crosses the intermediate level, and the threshold level is not fully reached, and the metastable state occurs, so it is easy Data output errors due to noise interference will lead to edge judgment errors.
本发明为解决因采样信号的阶跃、塌陷及亚稳态等情况导致错误采样的缺陷,提出一种可避免阶跃、塌陷及亚稳态对采样的影响,可适用于不同场景,且能够保证采样信号的准确性的内存接口写入均衡的控制方法及装置。下面结合附图和具体实施例对本发明作进一步说明,但不作为本发明的限定。参阅图1,其为一符合本发明一优选实施例的内存接口写入均衡的控制方法的流程示意图,从图中可以看出,本实施例中所提供的内存接口写入均衡的控制方法主要包括以下步骤:In order to solve the defect of incorrect sampling caused by the step, collapse and metastable state of the sampled signal, the present invention proposes a method that can avoid the influence of step, collapse and metastable state on sampling, can be applied to different scenarios, and can A control method and device for memory interface writing equalization that ensure the accuracy of the sampled signal. The present invention will be further described below in conjunction with the drawings and specific embodiments, but it is not a limitation of the present invention. Referring to FIG. 1, it is a schematic flow chart of a method for controlling write balance of a memory interface according to a preferred embodiment of the present invention. As can be seen from the figure, the method for controlling write balance of a memory interface provided in this embodiment mainly It includes the following steps:
S1.将采样信号以预设延时步进发送至内存装置;S1. Send the sampling signal to the memory device with a preset delay step;
在本实施例中,内存装置可以是动态随机存取存储器,也可以是双倍速率同步动态随机存储器。In this embodiment, the memory device may be a dynamic random access memory, or a double-rate synchronous dynamic random access memory.
本实施例的采样信号为数据采样时钟(dqs)到达内存装置的信号。The sampling signal in this embodiment is a signal that the data sampling clock (dqs) reaches the memory device.
进一步地,步骤S1包括:Further, step S1 includes:
从所述采样信号的初始位置起始,每次增加预设延时步进,将所述采样信号发送至内存装置,直至延时步进达到第二预设长度。Starting from the initial position of the sampling signal, each time a preset delay step is increased, the sampling signal is sent to the memory device until the delay step reaches a second preset length.
在本实施例中,第二预设长度大于采样信号的周期长度CLK,例如:第二预设长度可以是1.5个CLK周期,或2个CLK周期。In this embodiment, the second preset length is greater than the cycle length CLK of the sampling signal. For example, the second preset length may be 1.5 CLK cycles, or 2 CLK cycles.
具体地,以预设延时步进为1/64CLK周期长度,第二预设长度为2个CLK周期,逐步增加采样信号的延时步进,共计采集数据128轮,以实现覆盖2个CLK周期的采样信号。理论上对应标准波形的分析,覆盖1.5个CLK周期即可采集到一个高电平脉冲,考虑到采样信号可能出现抖动的情况,因此适当的延伸长度,将第二预设长度设置为2个CLK周期,以便于后续对采样信号的分析。Specifically, the preset delay step is 1/64CLK cycle length, the second preset length is 2 CLK cycles, and the delay step of the sampling signal is gradually increased, and a total of 128 rounds of data are collected to realize the coverage of 2 CLKs. Periodic sampling signal. Theoretically corresponding to the analysis of the standard waveform, a high-level pulse can be collected within 1.5 CLK cycles. Considering the possible jitter of the sampled signal, the extension length is appropriate and the second preset length is set to 2 CLK Period to facilitate subsequent analysis of the sampled signal.
S2.根据每一延时步进对应的所述采样信号的有效电平,生成第一预设长度的采样信息;S2. Generate sampling information of a first preset length according to the effective level of the sampling signal corresponding to each delay step;
在本实施例中,第一预设长度可以是2个CLK周期。In this embodiment, the first preset length may be 2 CLK cycles.
参考图2进一步地,步骤S2可包括:With reference to FIG. 2 further, step S2 may include:
S21.对每一延时步进对应的采样信号进行N次采样,获取每一次采样的电平值;其中,N为奇数(例如:N=3,5,7,9等);S21. Sampling the sampling signal corresponding to each delay step N times to obtain the level value of each sampling; where N is an odd number (for example: N=3,5,7,9, etc.);
S22.在N次采样中,将相同电平值的采样次数累加,将大于(N-1)/2的累加采样次数对应的电平值作为有效电平;S22. In N samplings, accumulate the sampling times of the same level value, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
S23.依据所述延时步进的顺序将每一所述延时步进对应的所述采样信号的有效电平组合,生成所述第一预设长度的采样信息。S23. Combine the effective levels of the sampling signals corresponding to each of the delay steps according to the sequence of the delay steps to generate the sampling information of the first preset length.
具体的,以N=9为例,对每一延时步进分别进行9次采样,并记录每一次采样的电平值,若9次采样中0(低电平)的个数大于(9-1)/2=4,则相应 的延时步进对应的有效电平值为0;若9次采样中1(高电平)的个数大于4,则相应的延时步进对应的有效电平值为1。将每一个延时步进对应的有效电平根据延时步进的顺序进行组合,从而获取2个CLK周期长度的采样信息。Specifically, taking N=9 as an example, each delay step is sampled 9 times, and the level value of each sample is recorded. If the number of 0 (low level) in 9 samples is greater than (9 -1)/2=4, the corresponding effective level value of the corresponding delay step is 0; if the number of 1 (high level) in 9 samples is greater than 4, the corresponding delay step corresponds to The effective level value is 1. The effective level corresponding to each delay step is combined according to the sequence of the delay step, so as to obtain the sampling information of the length of 2 CLK cycles.
在步骤S2中通过对每一延时步进进行多次采样,提取概率大的电平值作为有效电平,以避免因波形质量不好时影响采样信号的准确性。In step S2, multiple sampling is performed for each delay step, and a level value with a high probability is extracted as an effective level, so as to avoid affecting the accuracy of the sampling signal due to poor waveform quality.
S3.获取所述采样信息中有效电平之和最大的区域位置;S3. Obtain the location of the area where the sum of the effective levels in the sampling information is the largest;
具体地,步骤S3为在所述采样信息中获取第三预设长度的有效电平之和最大的区域位置。Specifically, step S3 is to obtain, in the sampling information, the position of the area where the sum of the effective levels of the third preset length is the largest.
其中,第三预设长度为0.5个CLK周期长度。Wherein, the third preset length is 0.5 CLK cycle length.
在本实施例中,考虑到写入均衡的目的是为了将数据采样时钟的上升沿与系统总线时钟的上升沿对齐,相当于在采样信息中有效电平1的个数越多,数据采样时钟的上升沿与系统总线时钟上升沿对齐的概率越大。因此,从采样信息的起始有效电平开始顺次遍历0.5个CLK周期,逐个遍历,提取第一个有效电平之和最大的区域位置(0.5个CLK周期长度),通过统计的方式获取有效电平之和最大的位置,从而提取亚稳态对采样信号的干扰。In this embodiment, considering that the purpose of write equalization is to align the rising edge of the data sampling clock with the rising edge of the system bus clock, it is equivalent to the larger the number of valid level 1 in the sampling information, the more the data sampling clock The higher the probability that the rising edge of is aligned with the rising edge of the system bus clock. Therefore, starting from the initial effective level of the sampling information, traverse 0.5 CLK cycles in sequence, traversing one by one, and extract the location of the region with the largest sum of the first effective levels (0.5 CLK cycle length), and obtain the validity through statistical methods. The position where the sum of the levels is the largest, so as to extract the interference of the metastable state on the sampled signal.
S4.根据所述区域位置确定所述采样信号的写入均衡延时步进。S4. Determine the write equalization delay step of the sampling signal according to the location of the region.
进一步地,步骤S4中所述区域位置为起始点为有效电平为1的区域位置,根据所述区域位置的起始点对应的所述采样信号的延时步进,获取所述采样信号的写入均衡相位值。Further, in step S4, the region position is the region position whose starting point is the effective level of 1, and the writing of the sample signal is obtained according to the delay step of the sampling signal corresponding to the starting point of the region position. Enter the balanced phase value.
在步骤S4中所述区域位置为起始点也可以是有效电平为0的区域位置。In step S4, the area position is the starting point or the area position where the effective level is 0.
本实施例中,在控制采样信号以预设延时步进发送至内存装置的过程中,基于每一延时步进对应的采样信号的有效电平,生成第一预设长度的采样信息;对采样信息进行分析,根据采样信息中有效电平之和最大的区域位置确定采样信号的写入均衡相位值,从而屏蔽在采样过程中因抖动、噪声等干扰造成的采样错误,进而确定采样信号的最佳延时位置,自适应性强。In this embodiment, in the process of controlling the sampling signal to be sent to the memory device at a preset delay step, the sampling information of the first preset length is generated based on the effective level of the sampling signal corresponding to each delay step; Analyze the sampling information, and determine the write equalization phase value of the sampling signal according to the location of the area where the sum of the effective levels in the sampling information is the largest, so as to shield the sampling error caused by jitter, noise and other interference during the sampling process, and then determine the sampling signal The best time delay position, strong adaptability.
内存接口写入均衡的控制方法能自动适应具有不同板级走线风格造成的 延时差异以及能自动消除噪声,可以广泛应用于不同DDR标准(如:DDR3、DDR4、LPDDR3、LPDDR4等),具有高效准确,自适应的特性。The control method of memory interface write balance can automatically adapt to the delay difference caused by different board-level wiring styles and automatically eliminate noise. It can be widely used in different DDR standards (such as: DDR3, DDR4, LPDDR3, LPDDR4, etc.), with Efficient, accurate, and self-adaptive.
如图3-图4所示,本发明还提供了一种内存接口写入均衡的控制装置1可包括:控制单元11、生成单元12、获取单元13和确定单元14;As shown in Figures 3 to 4, the present invention also provides a memory interface write equalization control device 1 which may include: a control unit 11, a generation unit 12, an acquisition unit 13, and a determination unit 14;
控制单元11,用于将采样信号以预设延时步进发送至内存装置;The control unit 11 is configured to send the sampling signal to the memory device in a preset delay step;
在本实施例中,内存装置可以是动态随机存取存储器,也可以是双倍速率同步动态随机存储器。In this embodiment, the memory device may be a dynamic random access memory, or a double-rate synchronous dynamic random access memory.
本实施例的采样信号为数据采样时钟(dqs)到达内存装置的信号。The sampling signal in this embodiment is a signal that the data sampling clock (dqs) reaches the memory device.
所述控制单元11用于从所述采样信号的初始位置起始,每次增加预设延时步进,将所述采样信号发送至内存装置,直至延时步进达到第二预设长度。The control unit 11 is configured to start from the initial position of the sampling signal, each time a preset delay step is increased, and send the sampling signal to the memory device until the delay step reaches a second preset length.
在本实施例中,第二预设长度大于采样信号的周期长度CLK,例如:第二预设长度可以是1.5个CLK周期,或2个CLK周期。In this embodiment, the second preset length is greater than the cycle length CLK of the sampling signal. For example, the second preset length may be 1.5 CLK cycles, or 2 CLK cycles.
具体地,以预设延时步进为1/64CLK周期长度,第二预设长度为2个CLK周期,逐步增加采样信号的延时步进,共计采集数据128轮,以实现覆盖2个CLK周期的采样信号。理论上对应标准波形的分析,覆盖1.5个CLK周期即可采集到一个高电平脉冲,考虑到采样信号可能出现抖动的情况,因此适当的延伸长度,将第二预设长度设置为2个CLK周期,以便于后续对采样信号的分析。Specifically, the preset delay step is 1/64CLK cycle length, the second preset length is 2 CLK cycles, and the delay step of the sampling signal is gradually increased, and a total of 128 rounds of data are collected to realize the coverage of 2 CLKs. Periodic sampling signal. Theoretically corresponding to the analysis of the standard waveform, a high-level pulse can be collected within 1.5 CLK cycles. Considering the possible jitter of the sampled signal, the extension length is appropriate and the second preset length is set to 2 CLK Period to facilitate subsequent analysis of the sampled signal.
生成单元12,用于根据每一延时步进对应的所述采样信号的有效电平,生成第一预设长度的采样信息;The generating unit 12 is configured to generate sampling information of a first preset length according to the effective level of the sampling signal corresponding to each delay step;
在本实施例中,第一预设长度可以是2个CLK周期。In this embodiment, the first preset length may be 2 CLK cycles.
参考图4进一步地,所述生成单元12可包括:采样模块121、处理模块122和组合模块123;Further referring to FIG. 4, the generating unit 12 may include: a sampling module 121, a processing module 122, and a combining module 123;
采样模块121,用于对每一延时步进对应的采样信号进行N次采样,获取每一次采样的电平值;其中,N为奇数(例如:N=3,5,7,9等);The sampling module 121 is used for sampling the sampling signal corresponding to each delay step N times to obtain the level value of each sampling; where N is an odd number (for example: N=3,5,7,9, etc.) ;
处理模块122,用于在N次采样中,将相同电平值的采样次数累加,将大 于(N-1)/2的累加采样次数对应的电平值作为有效电平;The processing module 122 is configured to accumulate the sampling times of the same level value in N sampling times, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
组合模块123,用于依据所述延时步进的顺序将每一所述延时步进对应的所述采样信号的有效电平组合,生成所述第一预设长度的采样信息。The combination module 123 is configured to combine the effective levels of the sampling signals corresponding to each of the delay steps according to the sequence of the delay steps to generate the first preset length of sampling information.
具体的,以N=9为例,对每一延时步进分别进行9次采样,并记录每一次采样的电平值,若9次采样中0(低电平)的个数大于(9-1)/2=4,则相应的延时步进对应的有效电平值为0;若9次采样中1(高电平)的个数大于4,则相应的延时步进对应的有效电平值为1。将每一个延时步进对应的有效电平根据延时步进的顺序进行组合,从而获取2个CLK周期长度的采样信息。Specifically, taking N=9 as an example, each delay step is sampled 9 times, and the level value of each sample is recorded. If the number of 0 (low level) in 9 samples is greater than (9 -1)/2=4, the corresponding effective level value of the corresponding delay step is 0; if the number of 1 (high level) in 9 samples is greater than 4, the corresponding delay step corresponds to The effective level value is 1. The effective level corresponding to each delay step is combined according to the sequence of the delay step, so as to obtain the sampling information of the length of 2 CLK cycles.
在本实施例中,通过对每一延时步进进行多次采样,提取概率大的电平值作为有效电平,以避免因波形质量不好时影响采样信号的准确性。In this embodiment, by sampling each delay step multiple times, a level value with a high probability is extracted as an effective level, so as to avoid affecting the accuracy of the sampled signal when the waveform quality is not good.
获取单元13,用于获取所述采样信息中有效电平之和最大的区域位置;The acquiring unit 13 is configured to acquire the location of the area where the sum of the effective levels in the sampling information is the largest;
所述获取单元13用于在所述采样信息中获取第三预设长度的有效电平之和最大的区域位置。The acquiring unit 13 is configured to acquire, from the sampling information, the location of the area where the sum of the effective levels of the third preset length is the largest.
其中,第三预设长度为0.5个CLK周期长度。Wherein, the third preset length is 0.5 CLK cycle length.
在本实施例中,考虑到写入均衡的目的是为了将数据采样时钟的上升沿与系统总线时钟的上升沿对齐,相当于在采样信息中有效电平1的个数越多,数据采样时钟的上升沿与系统总线时钟上升沿对齐的概率越大。因此,从采样信息的起始有效电平开始顺次遍历0.5个CLK周期,逐个遍历,提取第一个有效电平之和最大的区域位置(0.5个CLK周期长度),通过统计的方式获取有效电平之和最大的位置,从而提取亚稳态对采样信号的干扰。In this embodiment, considering that the purpose of write equalization is to align the rising edge of the data sampling clock with the rising edge of the system bus clock, it is equivalent to the larger the number of valid level 1 in the sampling information, the more the data sampling clock The higher the probability that the rising edge of is aligned with the rising edge of the system bus clock. Therefore, starting from the initial effective level of the sampling information, traverse 0.5 CLK cycles in sequence, traversing one by one, and extract the location of the region with the largest sum of the first effective levels (0.5 CLK cycle length), and obtain the validity through statistical methods. The position where the sum of the levels is the largest, so as to extract the interference of the metastable state on the sampled signal.
确定单元14,用于根据所述区域位置确定所述采样信号的写入均衡延时步进。The determining unit 14 is configured to determine the write equalization delay step of the sampling signal according to the location of the region.
所述确定单元14用于根据所述区域位置的起始点对应的所述采样信号的延时步进,获取所述采样信号的写入均衡相位值;所述区域位置为起始点为有效电平为1的区域位置。The determining unit 14 is configured to obtain the write equalization phase value of the sampling signal according to the delay step of the sampling signal corresponding to the starting point of the area position; the area position is the starting point and the effective level Is the area position of 1.
在本实施例中,所述区域位置为起始点也可以是有效电平为0的区域位 置。In this embodiment, the area position is the starting point or the area position where the effective level is zero.
本实施例中,在控制采样信号以预设延时步进发送至内存装置的过程中,基于每一延时步进对应的采样信号的有效电平,生成第一预设长度的采样信息;对采样信息进行分析,根据采样信息中有效电平之和最大的区域位置确定采样信号的写入均衡相位值,从而屏蔽在采样过程中因抖动、噪声等干扰造成的采样错误,进而确定采样信号的最佳延时位置,自适应性强。In this embodiment, in the process of controlling the sampling signal to be sent to the memory device at a preset delay step, the sampling information of the first preset length is generated based on the effective level of the sampling signal corresponding to each delay step; Analyze the sampling information, and determine the write equalization phase value of the sampling signal according to the location of the area where the sum of the effective levels in the sampling information is the largest, so as to shield the sampling error caused by jitter, noise and other interference during the sampling process, and then determine the sampling signal The best time delay position, strong adaptability.
本发明可以同时自适应不同PCB设计风格,适配不同走线造成的数据采样时钟和总线时钟造成的延时差异,也能很好的抗走线信号失真,很好的简化了PCB走线设计压力,且能最大化的满足JEDEC定义的写入均衡指标参数,使DDR系统的相关前级性能和稳定性可靠性都得到稳定保障。The invention can adapt to different PCB design styles at the same time, adapt to the delay difference caused by the data sampling clock and the bus clock caused by different routing, and can also resist the distortion of the routing signal very well, which greatly simplifies the PCB routing design. Pressure, and can maximize the satisfaction of the write equalization index parameters defined by JEDEC, so that the relevant front-end performance and stability and reliability of the DDR system are stabilized.
以上所述仅为本发明较佳的实施例,并非因此限制本发明的实施方式及保护范围,对于本领域技术人员而言,应当能够意识到凡运用本发明说明书及图示内容所作出的等同替换和显而易见的变化所得到的方案,均应当包含在本发明的保护范围内。The foregoing descriptions are only preferred embodiments of the present invention, and do not limit the implementation and protection scope of the present invention. For those skilled in the art, they should be able to realize that all equivalents made using the description and illustrations of the present invention are equivalent. The solutions obtained by substitutions and obvious changes should all be included in the protection scope of the present invention.

Claims (10)

  1. 一种内存接口写入均衡的控制方法,其特征在于,包括:A method for controlling write balance of a memory interface, which is characterized in that it comprises:
    将采样信号以预设延时步进发送至内存装置;Send the sampling signal to the memory device with a preset delay step;
    根据每一延时步进对应的所述采样信号的有效电平,生成第一预设长度的采样信息;Generating sampling information of a first preset length according to the effective level of the sampling signal corresponding to each delay step;
    获取所述采样信息中有效电平之和最大的区域位置;Acquiring the location of the area where the sum of the effective levels in the sampling information is the largest;
    根据所述区域位置确定所述采样信号的写入均衡相位值。The write equalization phase value of the sampling signal is determined according to the location of the region.
  2. 根据权利要求1所述的内存接口写入均衡的控制方法,其特征在于,将采样信号以预设延时步进发送至内存装置,包括:The method for controlling write equalization of a memory interface according to claim 1, wherein sending the sampling signal to the memory device at a preset delay step comprises:
    从所述采样信号的初始位置起始,每次增加预设延时步进,将所述采样信号发送至内存装置,直至延时步进达到第二预设长度。Starting from the initial position of the sampling signal, each time a preset delay step is increased, the sampling signal is sent to the memory device until the delay step reaches a second preset length.
  3. 根据权利要求1所述的内存接口写入均衡的控制方法,其特征在于,根据每一延时步进对应的所述采样信号的有效电平,生成第一预设长度的采样信息,包括:The method for controlling write equalization of a memory interface according to claim 1, wherein generating the sampling information of the first preset length according to the effective level of the sampling signal corresponding to each delay step comprises:
    对每一延时步进对应的采样信号进行N次采样,获取每一次采样的电平值;其中,N为奇数;Sampling the sampling signal corresponding to each delay step N times to obtain the level value of each sampling; where N is an odd number;
    在N次采样中,将相同电平值的采样次数累加,将大于(N-1)/2的累加采样次数对应的电平值作为有效电平;In N sampling, accumulate the sampling times of the same level value, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
    依据所述延时步进的顺序将每一所述延时步进对应的所述采样信号的有效电平组合,生成所述第一预设长度的采样信息。Combining the effective levels of the sampling signals corresponding to each of the delay steps according to the sequence of the delay steps to generate the sampling information of the first preset length.
  4. 根据权利要求1所述的内存接口写入均衡的控制方法,其特征在于,获取所述采样信息中有效电平之和最大的区域位置,包括:The method for controlling write equalization of a memory interface according to claim 1, wherein obtaining the location of the region with the largest sum of effective levels in the sampling information comprises:
    在所述采样信息中获取第三预设长度的有效电平之和最大的区域位置。Acquire the area position where the sum of the effective levels of the third preset length is the largest in the sampling information.
  5. 根据权利要求1所述的内存接口写入均衡的控制方法,其特征在于,根据所述区域位置确定所述采样信号的写入均衡相位值,包括:The method for controlling write equalization of a memory interface according to claim 1, wherein determining the write equalization phase value of the sampling signal according to the location of the region comprises:
    所述区域位置为起始点为有效电平为1的区域位置,根据所述区域位置的起始点对应的所述采样信号的延时步进,获取所述采样信号的写入均衡相位 值。The area position is an area position where the starting point is an effective level of 1, and the write equalization phase value of the sampling signal is obtained according to the delay step of the sampling signal corresponding to the starting point of the area position.
  6. 一种内存接口写入均衡的控制装置,其特征在于,包括:A control device for writing balance of a memory interface, which is characterized in that it comprises:
    控制单元,用于将采样信号以预设延时步进发送至内存装置;The control unit is used to send the sampling signal to the memory device with a preset delay step;
    生成单元,用于根据每一延时步进对应的所述采样信号的有效电平,生成第一预设长度的采样信息;A generating unit, configured to generate sampling information of a first preset length according to the effective level of the sampling signal corresponding to each delay step;
    获取单元,用于获取所述采样信息中有效电平之和最大的区域位置;An acquiring unit, configured to acquire the location of the area where the sum of the effective levels in the sampling information is the largest;
    确定单元,用于根据所述区域位置确定所述采样信号的写入均衡相位值。The determining unit is configured to determine the write equalization phase value of the sampling signal according to the location of the region.
  7. 根据权利要求6所述的内存接口写入均衡的控制装置,其特征在于,所述控制单元用于从所述采样信号的初始位置起始,每次增加预设延时步进,将所述采样信号发送至内存装置,直至延时步进达到第二预设长度。The control device for writing equalization of a memory interface according to claim 6, wherein the control unit is used to start from the initial position of the sampling signal, each time a preset delay step is increased, and the The sampling signal is sent to the memory device until the delay step reaches the second preset length.
  8. 根据权利要求6所述的内存接口写入均衡的控制装置,其特征在于,所述生成单元包括:The device for controlling write equalization of a memory interface according to claim 6, wherein the generating unit comprises:
    采样模块,用于对每一延时步进对应的采样信号进行N次采样,获取每一次采样的电平值;其中,N为奇数;The sampling module is used to sample the sampling signal corresponding to each delay step N times to obtain the level value of each sampling; where N is an odd number;
    处理模块,用于在N次采样中,将相同电平值的采样次数累加,将大于(N-1)/2的累加采样次数对应的电平值作为有效电平;The processing module is used to accumulate the sampling times of the same level value in N sampling times, and use the level value corresponding to the accumulated sampling times greater than (N-1)/2 as the effective level;
    组合模块,用于依据所述延时步进的顺序将每一所述延时步进对应的所述采样信号的有效电平组合,生成所述第一预设长度的采样信息。The combination module is configured to combine the effective levels of the sampling signals corresponding to each of the delay steps according to the sequence of the delay steps to generate the sampling information of the first preset length.
  9. 根据权利要求6所述的内存接口写入均衡的控制装置,其特征在于,所述获取单元用于在所述采样信息中获取第三预设长度的有效电平之和最大的区域位置。7. The control device for write equalization of a memory interface according to claim 6, wherein the acquiring unit is configured to acquire, from the sampling information, the location of the region where the sum of the effective levels of the third preset length is the largest.
  10. 根据权利要求6所述的内存接口写入均衡的控制装置,其特征在于,所述确定单元用于根据所述区域位置的起始点对应的所述采样信号的延时步进,获取所述采样信号的写入均衡相位值;所述区域位置为起始点为有效电平为1的区域位置。The control device for writing equalization of a memory interface according to claim 6, wherein the determining unit is configured to obtain the sample according to the delay step of the sample signal corresponding to the starting point of the region position The write-in equalization phase value of the signal; the area position is the area position where the starting point is the effective level of 1.
PCT/CN2020/109396 2019-12-25 2020-08-14 Internal memory interface write-leveling control method and device WO2021128874A1 (en)

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