WO2021121852A1 - Réservoir de matériau cible pour source de lumière à ultraviolet extrême - Google Patents

Réservoir de matériau cible pour source de lumière à ultraviolet extrême Download PDF

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Publication number
WO2021121852A1
WO2021121852A1 PCT/EP2020/082783 EP2020082783W WO2021121852A1 WO 2021121852 A1 WO2021121852 A1 WO 2021121852A1 EP 2020082783 W EP2020082783 W EP 2020082783W WO 2021121852 A1 WO2021121852 A1 WO 2021121852A1
Authority
WO
WIPO (PCT)
Prior art keywords
wall
metallic material
port
target
target material
Prior art date
Application number
PCT/EP2020/082783
Other languages
English (en)
Inventor
Jon David TEDROW
Original Assignee
Asml Netherlands B.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands B.V. filed Critical Asml Netherlands B.V.
Priority to CN202080087548.8A priority Critical patent/CN114830832A/zh
Priority to JP2022534160A priority patent/JP2023506411A/ja
Publication of WO2021121852A1 publication Critical patent/WO2021121852A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle

Definitions

  • This disclosure relates to a target material tank for an extreme ultraviolet (EUV) light source.
  • EUV extreme ultraviolet
  • an EUV light source includes a target supply system.
  • the target supply system includes: a droplet generator configured to produce a stream of targets; at least one apparatus including an interior region configured to be fluidly coupled to the droplet generator; and a vessel configured to receive the targets from the droplet generator.
  • the targets include a target material that emits EUV light when in a plasma state.
  • the apparatus includes: a first structure including a first wall; and a second structure including a second wall permanently joined to the first wall.
  • the interior region is at least partially defined by the first wall and the second wall.
  • the first wall includes a first metallic material
  • the second wall includes a second metallic material that has a different thermal conductivity than the first metallic material.
  • FIG. 3 is a block diagram of a metallic connection assembly.
  • FIG. 6A is a cross-sectional view of another target material tank in the X-Y plane.
  • the first wall 216 and the base portion 217 are made of the first metallic material.
  • the second structure 248 includes a second wall 218.
  • the second wall 218 is made of the second metallic material.
  • the second wall 218 extends in the Y direction from a second end 218b to a first end 218a.
  • Each of the first wall 216 and the second wall 218 is a three-dimensional, solid body.
  • the first wall 216 and the second wall 218 have approximately the same cross-sectional size shape in the X-Z (the plane that is in and out of the page in the example of FIG. 2).
  • the first wall 216 and the second wall 218 may have a circular, square, or rectangular cross-section in the X-Z plane.
  • the target material tank 244 holds target material.
  • the target material flows out of the target material tank 244 through the port 233, into the fluid communication connection 555, and into the reservoir 547.
  • the reservoir 547 supplies the droplet generator 142 with the target material.
  • the target supply system 540 allows the droplet generator 142 to operate while the tank 244 is being replenished.
  • the tank 244 may be replenished when the regulation device 552a is in a state that prevents the target material from flowing between the target material tank 244 and the reservoir 547.
  • the target material tank 244 is replenished with the solid target material and produces the fluid target material from the solid target material.
  • the top portion 215 of the tank 244 may be a removable lid 215.
  • the master controller 755 may therefore provide a laser position, direction, and timing correction signal, for example, to the laser control system 757 that may be used, for example, to control the laser timing circuit and/or to the beam control system 758 to control an amplified light beam position and shaping of the beam transport system 720 to change the location and/or focal power of the beam focal spot within the chamber 730.
  • the supply system 725 includes a target material delivery control system 726 that is operable, in response to a signal from the master controller 755, for example, to modify the release point of the droplets as released by the target supply system 727 to correct for errors in the droplets arriving at the desired plasma formation region 705.
  • thermo conductivity of the second metallic material is lower than the thermal conductivity of the first metallic material
  • the first wall extends from a first end to a second end
  • the second wall extends from a first end to a second end
  • the first end of the first wall is brazed to the second end of the second wall
  • the apparatus further comprises: an O-ring at the first end of the second wall; and a removable lid configured to be held at the O-ring.
  • the at least one apparatus is a target material tank configured to hold the target material in the interior region.
  • the target supply system further comprises at least one valve, the at least one valve being configured to fluidly connect or fluidly disconnect the interior region of the target material tank with the droplet generator.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)

Abstract

Appareil pour une source de lumière à ultraviolet extrême (EUV) comprenant un corps. Le corps comprend une première structure (246) comportant une première paroi et une seconde structure (248) comportant une seconde paroi reliée de manière permanente à la première paroi. Un intérieur (203) du corps est au moins partiellement défini par la première paroi et la seconde paroi. La première paroi comprend un premier matériau métallique, et la seconde paroi comprend un second matériau métallique qui présente une conductivité thermique différente de celle du premier matériau métallique. L'intérieur du corps est conçu pour être en communication fluidique avec un système d'alimentation cible de la source de lumière EUV.
PCT/EP2020/082783 2019-12-17 2020-11-20 Réservoir de matériau cible pour source de lumière à ultraviolet extrême WO2021121852A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202080087548.8A CN114830832A (zh) 2019-12-17 2020-11-20 用于极紫外光源的目标材料储槽
JP2022534160A JP2023506411A (ja) 2019-12-17 2020-11-20 極端紫外光源用のターゲット材料タンク

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201962949144P 2019-12-17 2019-12-17
US62/949,144 2019-12-17
US202062986266P 2020-03-06 2020-03-06
US62/986,266 2020-03-06

Publications (1)

Publication Number Publication Date
WO2021121852A1 true WO2021121852A1 (fr) 2021-06-24

Family

ID=73544155

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2020/082783 WO2021121852A1 (fr) 2019-12-17 2020-11-20 Réservoir de matériau cible pour source de lumière à ultraviolet extrême

Country Status (4)

Country Link
JP (1) JP2023506411A (fr)
CN (1) CN114830832A (fr)
TW (1) TW202129398A (fr)
WO (1) WO2021121852A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130240645A1 (en) * 2012-03-13 2013-09-19 Gigaphoton Inc Target supply device
JP2015053292A (ja) * 2014-12-04 2015-03-19 ギガフォトン株式会社 極端紫外光源装置及びそのターゲット供給システム
WO2016059674A1 (fr) * 2014-10-14 2016-04-21 ギガフォトン株式会社 Matériau cible, dispositif de traitement de matériau, procédé de traitement de matériau, procédé de production de matériau et programme

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130240645A1 (en) * 2012-03-13 2013-09-19 Gigaphoton Inc Target supply device
WO2016059674A1 (fr) * 2014-10-14 2016-04-21 ギガフォトン株式会社 Matériau cible, dispositif de traitement de matériau, procédé de traitement de matériau, procédé de production de matériau et programme
JP2015053292A (ja) * 2014-12-04 2015-03-19 ギガフォトン株式会社 極端紫外光源装置及びそのターゲット供給システム

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Semiconductor Processing Equipment", RESEARCH DISCLOSURE, KENNETH MASON PUBLICATIONS, HAMPSHIRE, UK, GB, vol. 663, no. 39, 1 July 2019 (2019-07-01), pages 723, XP007147596, ISSN: 0374-4353, [retrieved on 20190605] *

Also Published As

Publication number Publication date
CN114830832A (zh) 2022-07-29
JP2023506411A (ja) 2023-02-16
TW202129398A (zh) 2021-08-01

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